Semiconductor device

Abstract

To provide a semiconductor device capable of improving characteristics.SOLUTION: According to an embodiment, a semiconductor device includes first to third electrodes, a first semiconductor member, a second semiconductor member, a first insulating member, and a second insulating member extending along a first direction. The first semiconductor member includes Alx1Ga1-x1 N(0≤x1<1). The second semiconductor member includes Alx2Ga1-x2 N(0<x2≤1, x1<x2). A first insulating region of the second insulating member is positioned between the third electrode and a third semiconductor portion of the second semiconductor member in the first direction.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] FIELD An embodiment of the present invention relates to a semiconductor device. [Background technology]

[0002] For example, in semiconductor devices such as transistors, improvements in characteristics are desired. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-89934 Summary of the Invention [Problem to be solved by the invention]

[0004] An embodiment of the present invention provides a semiconductor device capable of improving characteristics. [Means for solving the problem]

[0005] According to an embodiment of the present invention, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor member, a second semiconductor member, a first insulating member, and a second insulating member. The first electrode extends along a first direction. The second electrode extends along the first direction. A second direction from the first electrode to the second electrode intersects with the first direction. The third electrode extends along the first direction. A position of the third electrode in the second direction is between a position of the first electrode in the second direction and a position of the second electrode in the second direction. The third electrode includes a first electrode portion. The first semiconductor member is Al x1 Ga 1-x1It includes N(0≦x1<1). The first semiconductor member includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region. The direction from the first partial region to the first electrode is along a third direction intersecting with the plane including the first direction and the second direction. The direction from the second partial region to the second electrode is along the third direction. The direction from the third partial region to the first electrode portion is along the third direction. The position of the fourth partial region in the second direction is between the position of the first partial region in the second direction and the position of the third partial region in the second direction. The position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and the position of the second partial region in the second direction. The direction from the third partial region to the sixth partial region is along the first direction. The second semiconductor member is Al x2 Ga 1-x2 It includes N(0<x2≦1, x1<x2). The second semiconductor member includes a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion. The direction from the fourth partial region to the first semiconductor portion is along the third direction. The direction from the fifth partial region to the second semiconductor portion is along the third direction. The direction from the sixth partial region to the third semiconductor portion is along the third direction. The first electrode portion is between the first semiconductor portion and the second semiconductor portion in the second direction. The direction from the first electrode portion to the third semiconductor portion is along the first direction. The first insulating member includes a first insulating portion. The first insulating portion is provided between the third partial region and the first electrode portion, between the first semiconductor portion and the first electrode portion, and between the first electrode portion and the second semiconductor portion. The second insulating member includes a first insulating region. The first insulating region is between the third electrode and the third semiconductor portion in the first direction.

Brief Description of the Drawings

[0006] [Figure 1] FIG. 1 is a schematic plan view illustrating a semiconductor device according to the first embodiment. [Diagram 2]FIG. 2 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. [Diagram 3] FIG. 3 is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment. [Figure 4] FIG. 4 is a schematic plan view illustrating the semiconductor device according to the first embodiment. [Diagram 5] FIG. 5 is a schematic plan view illustrating the semiconductor device according to the first embodiment. [Figure 6] FIG. 6 is a schematic plan view illustrating the semiconductor device according to the first embodiment. [Figure 7] FIG. 7 is a schematic plan view illustrating the semiconductor device according to the second embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. [Figure 9] FIG. 9 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. [Figure 10] FIG. 10 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. [Figure 11] FIG. 11 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. [Figure 12] FIG. 12 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. [Figure 13] FIG. 13 is a schematic cross-sectional view illustrating the semiconductor device according to the second embodiment. [Figure 14] FIG. 14 is a schematic plan view illustrating the semiconductor device according to the second embodiment. [Figure 15] FIG. 15 is a schematic plan view illustrating the semiconductor device according to the second embodiment. [Figure 16] FIG. 16 is a schematic plan view illustrating the semiconductor device according to the embodiment. [Figure 17] FIG. 17 is a schematic plan view illustrating the semiconductor device according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios of each part may be different depending on the drawing. In this specification and each drawing, elements similar to those described above with reference to the previous drawings are given the same reference numerals and detailed descriptions thereof will be omitted as appropriate.

[0008] (First embodiment) FIG. 1 is a schematic plan view illustrating the semiconductor device according to the first embodiment. 2 and 3 are schematic cross-sectional views illustrating the semiconductor device according to the first embodiment. FIG. 4 is a schematic plan view illustrating the semiconductor device according to the first embodiment. Fig. 2 is a cross-sectional view taken along the line A1-A2 in Fig. 1. Fig. 3 is a cross-sectional view taken along the line B1-B2 in Fig. 1.

[0009] As shown in FIGS. 1 to 3, a semiconductor device 110 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor member 10, a second semiconductor member 20, a first insulating member 41, and a second insulating member 42.

[0010] The first electrode 51, the second electrode 52, and the third electrode 53 extend along a first direction D1. The first direction D1 is defined as the Y-axis direction. A direction perpendicular to the Y-axis direction is defined as the X-axis direction. A direction perpendicular to the Y-axis direction and the X-axis direction is defined as the Z-axis direction. For each of these electrodes, the length in the Y-axis direction is longer than the length in the X-axis direction and longer than the length in the Z-axis direction.

[0011] A second direction D2 from the first electrode 51 to the second electrode 52 intersects with the first direction D1. The second direction D2 is, for example, the X-axis direction.

[0012] The position of the third electrode 53 in the second direction D2 is between the position of the first electrode 51 in the second direction D2 and the position of the second electrode 52 in the second direction D2. The third electrode 53 includes a first electrode portion 53a. The first electrode portion 53a extends along the first direction D1.

[0013] The first semiconductor member 10 contains Al x1 Ga 1-x1 N (0 ≦ x1 < 1). The composition ratio x1 may be, for example, 0 or more and less than 0.13. The first semiconductor member 10 may be GaN or AlGaN.

[0014] The first semiconductor member 10 includes a first partial region r1, a second partial region r2, a third partial region r3, a fourth partial region r4, a fifth partial region r5, and a sixth partial region r6. The direction from the first partial region r1 to the first electrode 51 is along the third direction D3. The third direction D3 intersects the plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the Z-axis direction.

[0015] The direction from the second partial region r2 to the second electrode 52 is along the third direction D3. The direction from the third partial region r3 to the first electrode portion 53a is along the third direction D3. The position of the fourth partial region r4 in the second direction D2 is between the position of the first partial region r1 in the second direction D2 and the position of the third partial region r3 in the second direction D2. The position of the fifth partial region r5 in the second direction D2 is between the position of the third partial region r3 in the second direction D2 and the position of the second partial region r2 in the second direction D2. The direction from the third partial region r3 to the sixth partial region r6 is along the first direction D1 (see FIG. 3).

[0016] The second semiconductor member 20 contains Al x2 Ga 1-x2 N (0 < x2 ≦ 1, x1 < x2). The composition ratio x2 may be, for example, 0.13 or more and 0.4 or less. The second semiconductor member 20 includes, for example, AlGaN.

[0017] 2, the second semiconductor member 20 includes a first semiconductor portion 21 and a second semiconductor portion 22. The direction from the fourth partial region r4 to the first semiconductor portion 21 is along the third direction D3. The direction from the fifth partial region r5 to the second semiconductor portion 22 is along the third direction D3.

[0018] As shown in Fig. 3, the second semiconductor member 20 further includes a third semiconductor portion 23. The direction from the sixth partial region r6 to the third semiconductor portion 23 is along the third direction D3. As shown in Fig. 2, the first electrode portion 53a is between the first semiconductor portion 21 and the second semiconductor portion 22 in the second direction D2. As shown in Fig. 3, the direction from the first electrode portion 53a to the third semiconductor portion 23 is along the first direction D1.

[0019] 2 and 3, the first insulating portion 41a is provided between the third partial region r3 and the first electrode portion 53a, between the first semiconductor portion 21 and the first electrode portion 53a, and between the first electrode portion 53a and the second semiconductor portion 22.

[0020] 3, the second insulating member 42 includes a first insulating region 42a. The first insulating region 42a is located between the third electrode 53 and the third semiconductor portion 23 in the first direction D1.

[0021] In the semiconductor device 110, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be a potential based on the potential of the first electrode 51. The first electrode 51 functions as, for example, a source electrode. The second electrode 52 functions as, for example, a drain electrode. The third electrode 53 functions as, for example, a gate electrode. The semiconductor device 110 is, for example, a transistor.

[0022] The first semiconductor member 10 includes a portion facing the second semiconductor member 20. A carrier region is formed in this portion. The carrier region is, for example, a two-dimensional electron gas. The semiconductor device 110 is, for example, a HEMT (High Electron Mobility Transistor).

[0023] For example, the distance between the first electrode 51 and the third electrode 53 is shorter than the distance between the third electrode 53 and the second electrode 52. Stable operation is easily obtained.

[0024] In the semiconductor device 110, the first electrode portion 53a of the third electrode 53 is provided between the first semiconductor portion 21 and the second semiconductor portion 22. The first electrode portion 53a is provided, for example, in a trench 53T (or a recess) provided in the semiconductor member. This makes it easier to obtain a high threshold voltage. For example, a normally-off operation can be obtained. In the semiconductor device 110, the first electrode portion 53a may be provided between the fourth partial region r4 and the fifth partial region r5.

[0025] As described above, in the embodiment, the first insulating region 42a is provided between the third electrode 53 and the third semiconductor portion 23. This makes it possible to suppress leakage current.

[0026] For example, a first reference example in which the first insulating region 42a is not provided is considered. In the first reference example, a current easily flows between the first semiconductor portion 21 and the second semiconductor portion 22 through the third semiconductor portion 23. A leakage current occurs. This makes it difficult to sufficiently reduce the off-resistance.

[0027] In contrast, in the embodiment, the first insulating region 42a is provided, thereby making it possible to suppress the leakage current. As a result, for example, a normally-off operation with a sufficiently low off-resistance can be obtained. For example, the third electrode 53 does not overlap with the third semiconductor portion 23 in the Z-axis direction, making it possible to suppress the leakage current. As a result, a normally-off operation with a sufficiently low off-resistance can be obtained. According to the embodiment, it is possible to provide a semiconductor device that can improve characteristics.

[0028] 1, the semiconductor device 110 may include a first region R1, a second region R2, and a third region R3. The first region R1 is disposed between the second region R2 and the third region R3 in a first direction D1. The first region R1 is an active region. The second region R2 is one of a plurality of termination regions. The third region R3 is another of the plurality of termination regions.

[0029] The first partial region r1, the second partial region r2, the third partial region r3, the fourth partial region r4, and the fifth partial region r5 are included in the first region R1. The sixth partial region r6 is included in the second region R2. The crystallinity of the first region R1 is higher than that of the second region R2. Alternatively, the first region R1 includes crystals, and the second region R2 does not include crystals. The second region R2 is formed, for example, by implanting ions such as Ar into the semiconductor member to deteriorate the crystallinity of the semiconductor member. The first region R1 is a region into which ions are not implanted. The concentration of the first element in the second region R2 is higher than the concentration of the first element in the first region R1. The first element includes at least one selected from the group consisting of Ar, P, and N.

[0030] For example, a second reference example may be considered in which an end of the third electrode 53 is provided in the second region R2. In this case, a part of the second region R2 is covered with the third electrode 53. Ions are not implanted into the part covered with the third electrode 53, and high crystallinity is maintained. This part has high conductivity and serves as a path for leakage current.

[0031] For example, when the second region R2 includes a portion that is not covered with the third electrode 53 and ions are implanted into this portion, the crystallinity may be restored by a subsequent heat treatment. In this case, a path for leakage current also exists.

[0032] As shown in FIG. 3, in the embodiment, the end of the third electrode 53 is in the first region R1. The portion not covered by the third electrode 53 is not provided in the second region R2, which is the termination region. For example, in the first direction D1, the end of the third electrode 53 is set back from the end of the trench 53T. As a result, a portion where the second semiconductor member 20 is not provided is formed in the second region R2 of the termination region. When ions are implanted into this portion, a region with high crystallinity is not formed in the second region R2 of the termination region. A carrier region is not formed in the second region R2. The first insulating region 42a is provided in the portion where the third electrode 53 is set back. The current path is reliably divided.

[0033] 3, the second region R2 includes a high-resistance region 10i. The high-resistance region 10i is a region into which ions such as Ar are implanted. The sixth partial region r6 and the third semiconductor portion 23 are included in the high-resistance region 10i. The crystallinity in these regions included in the high-resistance region 10i is lower than the crystallinity in a region (first region R1) not included in the high-resistance region 10i.

[0034] For example, the crystallinity of the first semiconductor portion 21 is higher than the crystallinity of the third semiconductor portion 23. Alternatively, the first semiconductor portion 21 includes crystals, and the third semiconductor portion 23 does not include crystals.

[0035] For example, the crystallinity of the fourth partial region r4 is higher than that of the sixth partial region r6. Or, the fourth partial region r4 includes crystals, and the sixth partial region r6 does not include crystals. For example, the crystallinity of the fifth partial region r5 is higher than that of the sixth partial region r6. Or, the fifth partial region r5 includes crystals, and the sixth partial region r6 does not include crystals.

[0036] 3, the first semiconductor member 10 may further include a seventh partial region r7. The third partial region r3 is provided between the seventh partial region r7 and the sixth partial region r6 in the first direction D1. The second semiconductor member 20 may further include a fourth semiconductor portion 24. The first electrode portion 53a is between the fourth semiconductor portion 24 and the third semiconductor portion 23 in the first direction D1. The second insulating member 42 may further include a second insulating region 42b. The second insulating region 42b is between the fourth semiconductor portion 24 and the third electrode 53 in the first direction D1.

[0037] The third region R3 is a region into which ions such as Ar are implanted. The seventh partial region r7 and the fourth semiconductor portion 24 are included in the third region R3. The crystallinity of the seventh partial region r7 and the fourth semiconductor portion 24 included in the third region R3 is lower than the crystallinity of the portions included in the first region R1.

[0038] 3, the third region R3 includes a high-resistance region 10i. The high-resistance region 10i is a region into which ions such as Ar are implanted. The seventh partial region r7 and the fourth semiconductor portion 24 are included in the high-resistance region 10i. The crystallinity in these regions included in the high-resistance region 10i is lower than the crystallinity in a region (first region R1) not included in the high-resistance region 10i.

[0039] For example, the crystallinity of the first semiconductor portion 21 is higher than the crystallinity of the fourth semiconductor portion 24. Alternatively, the first semiconductor portion 21 includes crystals, and the fourth semiconductor portion 24 does not include crystals.

[0040] The crystallinity of the fourth partial region r4 is higher than that of the seventh partial region r7. Alternatively, the fourth partial region r4 includes crystals, and the seventh partial region r7 does not include crystals. The crystallinity of the fifth partial region r5 is higher than that of the seventh partial region r7. Alternatively, the fifth partial region r5 includes crystals, and the seventh partial region r7 does not include crystals.

[0041] Thus, the crystallinity of the first region R1 is higher than that of the third region R3. Or, the first region R1 contains crystals, and the third region R3 does not contain crystals.

[0042] As shown in FIG. 1, the third electrode 53 does not overlap with the second region R2 in the third direction D3 and does not overlap with the third region R3 in the third direction D3. In this example, the second electrode 52 does not overlap with the second region R2 in the third direction D3 and does not overlap with the third region R3 in the third direction D3. For example, the first electrode 51 does not overlap with the second region R2 in the third direction D3 and does not overlap with the third region R3 in the third direction D3.

[0043] As shown in FIGS. 2 and 3, the semiconductor device 110 may further include a first compound member 31. The first compound member 31 contains Al z1 Ga 1-z1 N (0 < z1 ≤ 1, x2 < z1). The composition ratio z1 may be, for example, 0.7 or more and 1 or less. The first compound member 31 contains, for example, AlN or AlGaN.

[0044] At least a part of the first compound member 31 is provided between the third partial region r3 and the first insulating portion 41a, between the first semiconductor portion 21 and the first insulating portion 41a, and between the first insulating portion 41a and the second semiconductor portion 22. By providing the first compound member 31, for example, high mobility can be easily obtained. The resistance of the semiconductor device 110 can be lowered. In a first reference example in which the first insulating region 42a is not provided, when the first compound member 31 is provided, current leakage tends to increase. By providing the first insulating region 42a, even when the first compound member 31 is provided, current leakage can be effectively reduced. High mobility and small leakage current can be easily obtained.

[0045] As shown in FIG. 2, the semiconductor device 110 may further include a third insulating member 43. The first semiconductor portion 21 is provided between the fourth partial region r4 and a part of the third insulating member 43. The second semiconductor portion 22 is provided between the fifth partial region r5 and a part of the third insulating member 43. The third semiconductor portion 23 is provided between the sixth partial region r6 and a part of the third insulating member 43. The fourth semiconductor portion 24 is provided between the seventh partial region r7 and a part of the third insulating member 43. The third insulating member 43 is provided between the second semiconductor member 20 and the first insulating member 41. The third insulating member 43 contains, for example, silicon and at least one selected from the group consisting of oxygen and nitrogen. The third insulating member 43 functions, for example, as a protective film for the second semiconductor member 20. Current collapse is suppressed.

[0046] For example, the first insulating member 41 and the second insulating member 42 may include silicon and oxygen. For example, the first insulating member 41 and the second insulating member 42 may include at least one selected from the group consisting of silicon and aluminum, and at least one selected from the group consisting of oxygen and nitrogen.

[0047] 2, the first semiconductor portion 21 includes a first side surface 21f facing the first electrode portion 53a. The second semiconductor portion 22 includes a second side surface 22f facing the first electrode portion 53a. The first side surface 21f and the second side surface 22f correspond to the side surfaces of the trench 53T.

[0048] 1 and 2, the third electrode 53 may include a second electrode portion 53b. The first electrode portion 53a is between the third partial region r3 and the second electrode portion 53b. The length of the second electrode portion 53b along the second direction D2 (second electrode portion length L53b) may be longer than a first distance d1 along the second direction D2 between the first side surface 21f and the second side surface 22f. In the third direction D3, a part of the first insulating member 41 may be provided between a part of the second semiconductor member 20 and the second electrode portion 53b.

[0049] As shown in FIG. 4, the planar shapes of the first insulating region 42a and the second insulating region 42b may follow the planar shape of the trench 53T. The first width L1 of the first insulating region 42a along the second direction D2 may be substantially equal to the first distance d1. The second width L2 of the second insulating region 42b along the second direction D2 may be substantially equal to the first distance d1. The first width L1 is shorter than the second electrode portion length L53b. The second width L2 is shorter than the second electrode portion length L53b.

[0050] The depth z53 of the trench 53T (see FIG. 2) may be, for example, 100 nm or more and 400 nm or less. The depth z53 of the trench 53T corresponds to the distance along the third direction D3 between the interface between the third partial region r3 and the first compound member 31 and the interface between the second semiconductor member 20 and the third insulating member 43. When the depth z53 of the trench 53T is 100 nm or more, current leakage can be effectively suppressed. A high threshold voltage is easily obtained. When the depth z53 of the trench 53T is 400 nm or less, the on-resistance of the semiconductor device 110 is easily reduced.

[0051] The distance between the third partial region r3 and the first electrode portion 53a along the third direction D3 is preferably, for example, 20 nm or more and 150 nm or less. Highly stable operation can be obtained. When the distance is 20 nm or more, for example, stable operation of the threshold voltage can be easily obtained. When the distance is 150 nm or less, for example, low on-resistance can be easily obtained.

[0052] As shown in FIG. 2, in this example, the semiconductor device 110 includes a substrate 10S and a nitride member 10B. The nitride member 10B is provided between the substrate 10S and the first semiconductor member 10. The substrate 10S may be, for example, a silicon substrate. The nitride member 10B may include, for example, Al, Ga, and nitrogen. The nitride member 10B is, for example, a buffer layer.

[0053] FIG. 5 is a schematic plan view illustrating the semiconductor device according to the first embodiment. 5, in the semiconductor device 111, the shapes of the first insulating region 42a and the second insulating region 42b are different from those in the semiconductor device 110. Except for this, the configuration of the semiconductor device 111 may be the same as the configuration of the semiconductor device 110. The planar shapes of the first insulating region 42a and the second insulating region 42b may be, for example, trapezoidal. These planar shapes may also be, for example, rectangular.

[0054] 2, the first semiconductor portion 21 includes a first side surface 21f facing the first electrode portion 53a. The second semiconductor portion 22 includes a second side surface 22f facing the first electrode portion 53a. As shown in FIGS. 2 and 5, the distance between the first side surface 21f and the second side surface 22f along the second direction D2 is a first distance d1.

[0055] 5, in the semiconductor device 111, the first distance d1 is narrower than a first width L1 of at least a part of the first insulating region 42a along the second direction D2. The first distance d1 is narrower than a second width L2 of at least a part of the second insulating region 42b along the second direction D2. The wide first width L1 and second width L2 more reliably divide the current path.

[0056] Each of the first width L1 and the second width L2 is preferably 1.5 times or more and 10 times or less the first distance d1.

[0057] FIG. 6 is a schematic plan view illustrating the semiconductor device according to the first embodiment. 6, a plurality of third electrodes 53 are provided in the semiconductor device 112. Except for this, the configuration of the semiconductor device 112 may be the same as the configuration of the semiconductor device 110.

[0058] 6, a plurality of first insulating regions 42a are provided corresponding to the plurality of third electrodes 53. A direction from one of the plurality of third electrodes 53 to one of the plurality of first insulating regions 42a is along the first direction D1. A direction from another one of the plurality of third electrodes 53 to another one of the plurality of first insulating regions 42a is along the first direction D1. In a first plane PL1 including the first direction D1 and the second direction D2, one of the plurality of first insulating regions 42a is continuous with another one of the plurality of first insulating regions 42a.

[0059] For example, in the second region R2, the current path between the first electrode 51 and the second electrode 52 is more reliably cut off.

[0060] Second embodiment FIG. 7 is a schematic plan view illustrating the semiconductor device according to the second embodiment. 8 to 13 are schematic cross-sectional views illustrating the semiconductor device according to the second embodiment. Fig. 8 is a cross-sectional view taken along line A1-A2 in Fig. 7. Fig. 9 is a cross-sectional view taken along line A3-A4 in Fig. 7. Fig. 10 is a cross-sectional view taken along line A5-A6 in Fig. 7. Fig. 11 is a cross-sectional view taken along line B1-B2 in Fig. 7. Fig. 12 is a cross-sectional view taken along line B3-B4 in Fig. 7. Fig. 13 is a cross-sectional view taken along line B5-B6 in Fig. 7.

[0061] As shown in Figures 7 to 12, the semiconductor device 120 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor member 10, a second semiconductor member 20, a first insulating member 41, and a second insulating member 42.

[0062] The first electrode 51, the second electrode 52, and the third electrode 53 extend along a first direction D1. A second direction D2 from the first electrode 51 to the second electrode 52 intersects with the first direction D1. The position of the third electrode 53 in the second direction D2 is between the position of the first electrode 51 in the second direction D2 and the position of the second electrode 52 in the second direction D2. The third electrode 53 includes a first electrode portion 53a.

[0063] The first semiconductor member 10 is made of Al x1 Ga 1-x1It includes N(0≦x1<1). The first semiconductor member 10 includes a first partial region r1, a second partial region r2, a third partial region r3, a fourth partial region r4, a fifth partial region r5, a sixth partial region r6, and a seventh partial region r7.

[0064] As shown in FIG. 8, the direction from the first partial region r1 to the first electrode 51 is along a third direction D3 that intersects a plane including a first direction D1 and a second direction D2. The direction from the second partial region r2 to the second electrode 52 is along the third direction D3. The direction from the third partial region r3 to the first electrode portion 53a is along the third direction D3.

[0065] As shown in FIG. 8, the position of the fourth partial region r4 in the second direction D2 is provided between the position of the first partial region r1 in the second direction D2 and the position of the third partial region r3 in the second direction D2. The position of the fifth partial region r5 in the second direction D2 is provided between the position of the third partial region r3 in the second direction D2 and the position of the second partial region r2 in the second direction D2.

[0066] As shown in FIG. 11, the direction from the third partial region r3 to the sixth partial region r6 is along the first direction D1. As shown in FIG. 9, the direction from the seventh partial region r7 to the sixth partial region r6 is along the second direction D2.

[0067] The second semiconductor member 20 includes Al x2 Ga 1-x2 It includes N(0<x2≦1, x1<x2). The second semiconductor member 20 includes a first semiconductor portion 21, a second semiconductor portion 22, and a third semiconductor portion 23.

[0068] As shown in FIG. 8, the direction from the fourth partial region r4 to the first semiconductor portion 21 is along the third direction D3. The direction from the fifth partial region r5 to the second semiconductor portion 22 is along the third direction D3. As shown in FIG. 9, the direction from the seventh partial region r7 to the third semiconductor portion 23 is along the third direction D3. As shown in FIG. 8, the first electrode portion 53a is provided between the first semiconductor portion 21 and the second semiconductor portion 22 in the second direction D2.

[0069] The crystallinity of the first semiconductor portion 21 is higher than the crystallinity of the third semiconductor portion 23. Alternatively, the first semiconductor portion 21 includes crystals, and the third semiconductor portion 23 does not include crystals. As shown in Fig. 9, the seventh partial region r7 and the third semiconductor portion 23 are included in the high-resistance region 10i. The seventh partial region r7 and the third semiconductor portion 23 are included in the second region R2 (see Fig. 7).

[0070] 8 and 11, the first insulating member 41 includes a first insulating portion 41a. The first insulating portion 41a is provided between the third partial region r3 and the first electrode portion 53a, between the first semiconductor portion 21 and the first electrode portion 53a, and between the first electrode portion 53a and the second semiconductor portion 22.

[0071] 7 and 9, the second insulating member 42 includes a first insulating region 42a. The first insulating region 42a is provided between the third semiconductor portion 23 and the third electrode 53 in the second direction D2.

[0072] In the semiconductor device 120, the current path is divided by the first insulating region 42a, the leakage current is suppressed, and a semiconductor device with improved characteristics can be provided.

[0073] 9, the first semiconductor member 10 may further include an eighth partial region r8. The sixth partial region r6 is provided between the seventh partial region r7 and the eighth partial region r8 in the second direction D2. The second semiconductor member 20 may further include a fourth semiconductor portion 24. The direction from the eighth partial region r8 to the fourth semiconductor portion 24 is along the third direction D3.

[0074] At least a part of the eighth partial region r8 and the fourth semiconductor portion 24 are included in the high-resistance region 10i. At least a part of the eighth partial region r8 and the fourth semiconductor portion 24 are included in the second region R2.

[0075] For example, the crystallinity of the second semiconductor portion 22 is higher than the crystallinity of the fourth semiconductor portion 24. Alternatively, the second semiconductor portion 22 includes crystals, and the fourth semiconductor portion 24 does not include crystals.

[0076] 9, the second insulating member 42 further includes a second insulating region 42b. The second insulating region 42b is provided between the third electrode 53 and the fourth semiconductor portion 24 in the second direction D2. The second insulating region 42b more reliably divides the current path. Leakage current is suppressed.

[0077] As shown in Fig. 10, the first semiconductor member 10 may further include a ninth partial region r9. As shown in Fig. 11, the third partial region r3 is provided between the ninth partial region r9 and the sixth partial region r6 in the first direction D1.

[0078] 10, the first semiconductor member 10 may further include a tenth partial region r10. The direction from the tenth partial region r10 to the ninth partial region r9 is along the second direction D2. The second semiconductor member 20 may further include a fifth semiconductor portion 25. The direction from the tenth partial region r10 to the fifth semiconductor portion 25 is along the third direction D3.

[0079] The second insulating member 42 may include a third insulating region 42c. The third insulating region 42c is provided between the fifth semiconductor portion 25 and the third electrode 53 in the second direction D2. The third insulating region 42c more reliably divides the current path. Leakage current is suppressed.

[0080] 10, the first semiconductor member 10 may further include an eleventh partial region r11. In the second direction D2, the ninth partial region r9 is between the tenth partial region r10 and the eleventh partial region r11. The second semiconductor member 20 may further include a sixth semiconductor portion 26. The direction from the eleventh partial region r11 to the sixth semiconductor portion 26 is along the third direction D3.

[0081] The second insulating member 42 may include a fourth insulating region 42d. The fourth insulating region 42d is provided between the third electrode 53 and the sixth semiconductor portion 26 in the second direction D2. The fourth insulating region 42d more reliably divides the current path. Leakage current is suppressed.

[0082] At least a part of the tenth partial region r10 and the fifth semiconductor portion 25 are included in the high-resistance region 10i. At least a part of the tenth partial region r10 and the fifth semiconductor portion 25 are included in the third region R3.

[0083] At least a part of the eleventh partial region r11 and the sixth semiconductor portion 26 are included in the high-resistance region 10i. At least a part of the eleventh partial region r11 and the sixth semiconductor portion 26 are included in the third region R3.

[0084] For example, the crystallinity of the first semiconductor portion 21 is higher than that of the fifth semiconductor portion 25. Or, the first semiconductor portion 21 contains crystals, while the fifth semiconductor portion 25 does not contain crystals. The crystallinity of the second semiconductor portion 22 is higher than that of the sixth semiconductor portion 26. Or, the second semiconductor portion 22 contains crystals, while the sixth semiconductor portion 26 does not contain crystals.

[0085] For example, the crystallinity of the ninth partial region r9 is higher than that of the tenth partial region r10. Or, the ninth partial region r9 contains crystals, while the tenth partial region r10 does not contain crystals. For example, the crystallinity of the ninth partial region r9 is higher than that of the eleventh partial region r11. Or, the ninth partial region r9 contains crystals, while the eleventh partial region r11 does not contain crystals.

[0086] As shown in FIG. 8, the semiconductor device 120 may include a first compound member 31. The first compound member 31 contains Al z1 Ga 1-z1 N (0 < z1 ≦ 1, x2 < z1). At least a part of the first compound member 31 is provided between the third partial region r3 and the first insulating portion 41a, between the first semiconductor portion 21 and the first insulating portion 41a, and between the first insulating portion 41a and the second semiconductor portion 22. By providing the first compound member 31, for example, high mobility can be easily obtained. The resistance of the semiconductor device 120 can be lowered.

[0087] FIG. 14 is a schematic plan view illustrating a semiconductor device according to the second embodiment. 14, in a semiconductor device 121 according to the embodiment, the third electrode 53 includes a third electrode portion 53c. Except for this, the configuration of the semiconductor device 121 may be similar to the configuration of the semiconductor device 120.

[0088] As shown in Fig. 14, the third electrode 53 includes a second electrode portion 53b and a third electrode portion 53c. As shown in Fig. 8, the first electrode portion 53a is provided between the third partial region r3 and the second electrode portion 53b in the third direction D3.

[0089] As shown in Fig. 14, the position of the first insulating region 42a in the first direction D1 is between the position of the first electrode portion 53a in the first direction D1 and the position of the third electrode portion 53c in the first direction D1. As shown in Fig. 14, the length of the third electrode portion 53c in the second direction D2 is defined as the third electrode portion length L53c. The length of the second electrode portion 53b in the second direction D2 is defined as the second electrode portion length L53b. The third electrode portion length L53c is longer than the second electrode portion length L53b. By providing such a third electrode portion 53c, it becomes easier to connect the third electrode 53 to the wiring.

[0090] FIG. 15 is a schematic plan view illustrating the semiconductor device according to the second embodiment. 15, a semiconductor device 122 according to the embodiment is provided with a plurality of third electrodes 53. Except for this, the configuration of the semiconductor device 122 may be similar to the configuration of the semiconductor device 120.

[0091] 15, in this example, the second insulating region 42b is provided continuously between one of the multiple third electrodes 53 and another of the multiple third electrodes 53. The first insulating region 42a and the second insulating region 42b may be interchanged. In the embodiment, either the first insulating region 42a or the second insulating region 42b may be provided continuously between one of the multiple third electrodes 53 and another of the multiple third electrodes 53.

[0092] 15, the semiconductor device 122 may further include a connection conductive portion 53X. The connection conductive portion 53X extends along the second direction D2. The position of the first insulating region 42a in the first direction D1 is between the position of the first electrode portion 53a in the first direction D1 and the position of the connection conductive portion 53X in the first direction D1. For example, a plurality of third electrodes 53 are provided. The connection conductive portion 53X electrically connects one of the plurality of third electrodes 53 to another of the plurality of third electrodes 53.

[0093] FIG. 16 is a schematic plan view illustrating the semiconductor device according to the embodiment. 16, the semiconductor device 130 according to the embodiment includes a first electrode pad 51P, a second electrode pad 52P, and a third electrode pad 53P. The configuration of the semiconductor device 130 other than this may be similar to the configuration of any semiconductor device according to the first and second embodiments and their modifications.

[0094] In the semiconductor device 130, a plurality of first electrodes 51, a plurality of second electrodes 52, and a plurality of third electrodes 53 are provided. The first electrode pad 51P is electrically connected to the plurality of first electrodes 51. The second electrode pad 52P is electrically connected to the plurality of second electrodes 52. The third electrode pad 53P is electrically connected to the plurality of third electrodes 53.

[0095] For example, the first electrode pad 51P and the third electrode pad 53P are provided in the third region R3, and the second electrode pad 52P is provided in the second region R2.

[0096] FIG. 17 is a schematic plan view illustrating the semiconductor device according to the embodiment. 17, the semiconductor device 131 according to the embodiment includes a first electrode connection portion 51C and a third electrode connection portion 53C. Except for this, the configuration of the semiconductor device 131 may be similar to the configuration of the semiconductor device 130.

[0097] The first electrode connection portion 51C and the third electrode connection portion 53C extend along the second direction D2. The first electrode connection portion 51C electrically connects the multiple first electrodes 51. The third electrode connection portion 53C electrically connects the multiple third electrodes 53. At least the first insulating region 42a is also provided in the semiconductor device 130 and the semiconductor device 131. Leakage current can be suppressed. A semiconductor device capable of improving characteristics can be provided.

[0098] In an embodiment, information regarding the length and thickness is obtained by observation using an electron microscope, etc. Information regarding the composition of the material is obtained by secondary ion mass spectrometry (SIMS) or energy dispersive X-ray spectroscopy (EDX), etc.

[0099] The embodiments may include the following technical solutions. (Technical proposal 1) A first electrode extending along a first direction; a second electrode extending along the first direction, the second direction from the first electrode to the second electrode intersecting the first direction; a third electrode extending along the first direction, a position of the third electrode in the second direction being between a position of the first electrode in the second direction and a position of the second electrode in the second direction, the third electrode including a first electrode portion; Al x1 Ga 1-x1A first semiconductor member including N(0≦x1<1), wherein the first semiconductor member includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region, the direction from the first partial region to the first electrode is along a third direction intersecting a plane including the first direction and the second direction, the direction from the second partial region to the second electrode is along the third direction, the direction from the third partial region to the first electrode portion is along the third direction, the position of the fourth partial region in the second direction is between the position of the first partial region in the second direction and the position of the third partial region in the second direction, the position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and the position of the second partial region in the second direction, the direction from the third partial region to the sixth partial region is along the first direction, the first semiconductor member and, Al x2 Ga 1-x2 A second semiconductor member including N(0<x2≦1, x1<x2), wherein the second semiconductor member includes a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion, the direction from the fourth partial region to the first semiconductor portion is along the third direction, the direction from the fifth partial region to the second semiconductor portion is along the third direction, the direction from the sixth partial region to the third semiconductor portion is along the third direction, the first electrode portion is between the first semiconductor portion and the second semiconductor portion in the second direction, the direction from the first electrode portion to the third semiconductor portion is along the first direction, the second semiconductor member and, A first insulating member including a first insulating portion, wherein the first insulating portion is provided between the third partial region and the first electrode portion, between the first semiconductor portion and the first electrode portion, and between the first electrode portion and the second semiconductor portion, the first insulating member and, A second insulating member including a first insulating region, wherein the first insulating region is between the third electrode and the third semiconductor portion in the first direction, a semiconductor device.

[0100] (Technical solution 2) The crystallinity of the first semiconductor portion is higher than the crystallinity of the third semiconductor portion, or A semiconductor device as described in Technical Proposal 1, wherein the first semiconductor portion includes a crystal and the third semiconductor portion does not include a crystal.

[0101] (Technical proposal 3) The crystallinity of the fourth partial region is higher than the crystallinity of the sixth partial region, or The semiconductor device according to Technical Solution 1 or 2, wherein the fourth partial region includes a crystal and the sixth partial region does not include a crystal.

[0102] (Technical proposal 4) the first semiconductor portion includes a first side surface facing the first electrode portion; the second semiconductor portion includes a second side surface facing the first electrode portion; A semiconductor device described in any one of Technical Solutions 1 to 3, wherein a first distance along the second direction between the first side and the second side is narrower than a first width along the second direction of at least a portion of the first insulating region.

[0103] (Technical proposal 5) The first semiconductor member further includes a seventh partial region, the third partial region is between the seventh partial region and the sixth partial region in the first direction, The second semiconductor member further includes a fourth semiconductor portion, the first electrode portion is located between the fourth semiconductor portion and the third semiconductor portion in the first direction, The second insulating member further includes a second insulating region, A semiconductor device described in Technical Proposal 1, wherein the second insulating region is between the fourth semiconductor portion and the third electrode in the first direction.

[0104] (Technical proposal 6) The crystallinity of the first semiconductor portion is higher than the crystallinity of the fourth semiconductor portion, or The semiconductor device described in Technical Proposal 5, wherein the first semiconductor portion includes a crystal and the fourth semiconductor portion does not include a crystal.

[0105] (Technical proposal 7) The crystallinity of the fourth partial region is higher than the crystallinity of the seventh partial region, or The semiconductor device according to Technical Solution 5 or 6, wherein the fourth partial region includes a crystal and the seventh partial region does not include a crystal.

[0106] (Technical proposal 8) the first semiconductor member includes a first region, a second region, and a third region; the first region is provided between the second region and the third region in the first direction, the first partial region, the second partial region, the third partial region, the fourth partial region, and the fifth partial region are included in the first region, the sixth partial region is included in the second region, the seventh partial region is included in the third region, The crystallinity of the first region is higher than the crystallinity of the second region and higher than the crystallinity of the third region, or The semiconductor device according to any one of Technical Solutions 5 to 7, wherein the first region includes a crystal, and the second region and the third region do not include a crystal.

[0107] (Technical proposal 9) The semiconductor device described in Technical Proposal 8, wherein the third electrode does not overlap the second region in the third direction and does not overlap the third region in the third direction.

[0108] (Technical proposal 10) The semiconductor device according to Technical Proposal 8 or 9, wherein the second electrode does not overlap the second region in the third direction and does not overlap the third region in the third direction.

[0109] (Technical proposal 11) the first semiconductor portion includes a first side surface facing the first electrode portion; the second semiconductor portion includes a second side surface facing the first electrode portion; The semiconductor device according to any one of Technical Solutions 5 to 10, wherein a first distance along the second direction between the first side surface and the second side surface is narrower than a second width along the second direction of at least a part of the second insulating region.

[0110] (Technical Solution 12) A plurality of the third electrodes are provided. A plurality of the first insulating regions are provided. The direction from one of the plurality of third electrodes to one of the plurality of first insulating regions is along the first direction. The direction from another one of the plurality of third electrodes to another one of the plurality of first insulating regions is along the first direction. In a first plane including the first direction and the second direction, one of the plurality of first insulating regions is continuous with another one of the plurality of first insulating regions. The semiconductor device according to any one of Technical Solutions 1 to 11.

[0111] (Technical Solution 13) Further comprising a third electrode connection portion. A plurality of the third electrodes are provided. The third electrode connection portion electrically connects the plurality of third electrodes to each other. The semiconductor device according to any one of Technical Solutions 1 to 12.

[0112] (Technical Solution 14) Al z1 Ga 1-z1 Further comprising a first compound member including N(0 < z1 ≦ 1, x2 < z1). At least a part of the first compound member is provided between the third partial region and the first insulating portion, between the first semiconductor portion and the first insulating portion, and between the first insulating portion and the second semiconductor portion. The semiconductor device according to any one of Technical Solutions 1 to 13.

[0113] (Technical Solution 15) A first electrode extending along the first direction, A second electrode extending along the first direction, wherein a second direction from the first electrode to the second electrode intersects the first direction. The second electrode. A third electrode extending along the first direction, wherein a position of the third electrode in the second direction is between a position of the first electrode in the second direction and a position of the second electrode in the second direction, and the third electrode includes a first electrode portion, the third electrode, and Al x1 Ga 1-x1 A first semiconductor member containing N(0≦x1<1), the first semiconductor member includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region, and a seventh partial region, a direction from the first partial region to the first electrode is along a third direction intersecting a plane including the first direction and the second direction, a direction from the second partial region to the second electrode is along the third direction, a direction from the third partial region to the first electrode portion is along the third direction, a position of the fourth partial region in the second direction is between a position of the first partial region in the second direction and a position of the third partial region in the second direction, a position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and a position of the second partial region in the second direction, a direction from the third partial region to the sixth partial region is along the first direction, and a direction from the seventh partial region to the sixth partial region is along the second direction, the first semiconductor member, and Al x2 Ga 1-x2 A second semiconductor member containing N(0<x2≦1, x1<x2), the second semiconductor member includes a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion, a direction from the fourth partial region to the first semiconductor portion is along the third direction, a direction from the fifth partial region to the second semiconductor portion is along the third direction, a direction from the seventh partial region to the third semiconductor portion is along the third direction, the first electrode portion is between the first semiconductor portion and the second semiconductor portion in the second direction, crystallinity of the first semiconductor portion is higher than crystallinity of the third semiconductor portion, or the first semiconductor portion includes a crystal and the third semiconductor portion does not include a crystal, the second semiconductor member, and a first insulating member including a first insulating portion, the first insulating portion being provided between the third portion region and the first electrode portion, between the first semiconductor portion and the first electrode portion, and between the first electrode portion and the second semiconductor portion; A semiconductor device comprising a second insulating member including a first insulating region, the first insulating region being between the third semiconductor portion and the third electrode in the second direction.

[0114] (Technical proposal 16) The first semiconductor member further includes an eighth partial region, the sixth partial region is between the seventh partial region and the eighth partial region in the second direction, The second semiconductor member further includes a fourth semiconductor portion, a direction from the eighth portion region to the fourth semiconductor portion is along the third direction; The crystallinity of the second semiconductor portion is higher than the crystallinity of the fourth semiconductor portion, or the second semiconductor portion includes a crystal and the fourth semiconductor portion does not include a crystal; The second insulating member further includes a second insulating region, The semiconductor device described in Technical Proposal 15, wherein the second insulating region is provided between the third electrode and the fourth semiconductor portion in the second direction.

[0115] (Technical proposal 17) the third electrode further includes a second electrode portion and a third electrode portion; the first electrode portion is between the third portion region and the second electrode portion in the third direction, a position of the first insulating region in the first direction is between a position of the first electrode portion in the first direction and a position of the third electrode portion in the first direction, A semiconductor device according to Technical Proposal 15 or 16, wherein a third electrode portion length of the third electrode portion in the second direction is longer than a second electrode portion length of the second electrode portion in the second direction.

[0116] (Technical proposal 18) A plurality of the third electrodes are provided. The semiconductor device according to Technical Solution 16, wherein either the first insulating region or the second insulating region is continuously provided between one of the plurality of third electrodes and another one of the plurality of third electrodes.

[0117] (Technical Solution 19) The semiconductor device further includes a connection conductive part extending along the second direction. The position of the first insulating region in the first direction is between the position of the first electrode portion in the first direction and the position of the connection conductive part in the first direction. A plurality of the third electrodes are provided. The semiconductor device according to Technical Solution 15, wherein the connection conductive part electrically connects one of the plurality of third electrodes to another one of the plurality of third electrodes.

[0118] (Technical Solution 20) Al z1 Ga 1-z1 The semiconductor device further includes a first compound member containing N(0 < z1 ≤ 1, x2 < z1). The semiconductor device according to Technical Solution 15 or 16, wherein at least a part of the first compound member is provided between the third partial region and the first insulating part, between the first semiconductor part and the first insulating part, and between the first insulating part and the second semiconductor part.

[0119] According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0120] As described above, the embodiments of the present invention have been described with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the specific configurations of each element such as semiconductor members, electrodes, and insulating members included in the semiconductor device, the present invention can be similarly implemented by appropriately selecting from the range known to those skilled in the art, and as long as the same effects can be obtained, it is included in the scope of the present invention.

[0121] Furthermore, any combination of two or more elements of each of the specific examples, within the scope of technical feasibility, is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0122] In addition, all semiconductor devices and manufacturing methods thereof that can be implemented by a person skilled in the art by making appropriate design modifications based on the semiconductor device and manufacturing method thereof described above as the embodiments of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0123] In addition, within the scope of the concept of the present invention, a person skilled in the art may think of various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0124] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0125] 10, 20: first and second semiconductor members, 10B: nitride member, 10S: substrate, 10i: high resistance region, 21-26: first to sixth semiconductor portions, 21f: first side surface, 22f: second side surface, 31: first compound member, 41-43: first to third insulating members, 41a: first insulating portion, 42a-42d: first to fourth insulating regions, 51-53: first to third electrodes, 51C: first electrode connection portion, 51P-53P: first to third electrode pads, 53C: third electrode connection portion, 53T: trench, 53X: connecting conductive portion, 53a-53c: first to third electrode portions, 110-112, 120, 121, 130, 131: semiconductor device, D1~D3: 1st~3rd direction, L1, L2: 1st, 2nd width, L53b, L53c: 2nd, 3rd electrode partial length, PL1: 1st plane, R1~R3: 1st~3rd area, d1: 1st distance, r1~r11: 1st~11th partial area, z53: depth

Claims

1. A first electrode extending along a first direction; a second electrode extending along the first direction, the second direction from the first electrode to the second electrode intersecting the first direction; a third electrode extending along the first direction, a position of the third electrode in the second direction being between a position of the first electrode in the second direction and a position of the second electrode in the second direction, the third electrode including a first electrode portion; A ｘ１ G １－ｘ１ A first semiconductor member including N (0≦x1<1), the first semiconductor member including a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, and a sixth partial region, the direction from the first partial region to the first electrode is along a third direction intersecting a plane including the first direction and the second direction, the direction from the second partial region to the second electrode is along the third direction, the direction from the third partial region to the first electrode portion is along the third direction, the position of the fourth partial region in the second direction is between the position of the first partial region in the second direction and the position of the third partial region in the second direction, the position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and the position of the second partial region in the second direction, and the direction from the third partial region to the sixth partial region is along the first direction; A ｘ２ G １－ｘ２ N (0<x2≦1, x1<x2), the second semiconductor member including a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion, a direction from the fourth partial region to the first semiconductor portion is along the third direction, a direction from the fifth partial region to the second semiconductor portion is along the third direction, a direction from the sixth partial region to the third semiconductor portion is along the third direction, the first electrode portion is between the first semiconductor portion and the second semiconductor portion in the second direction, and a direction from the first electrode portion to the third semiconductor portion is along the first direction; a first insulating member including a first insulating portion, the first insulating portion being provided between the third portion region and the first electrode portion, between the first semiconductor portion and the first electrode portion, and between the first electrode portion and the second semiconductor portion; A semiconductor device comprising a second insulating member including a first insulating region, the first insulating region being between the third electrode and the third semiconductor portion in the first direction.

2. The crystallinity of the first semiconductor portion is higher than the crystallinity of the third semiconductor portion, or The semiconductor device according to claim 1 , wherein the first semiconductor portion includes a crystal, and the third semiconductor portion does not include a crystal.

3. The crystallinity of the fourth partial region is higher than the crystallinity of the sixth partial region, or The semiconductor device according to claim 1 , wherein the fourth partial region includes a crystal, and the sixth partial region does not include a crystal.

4. the first semiconductor portion includes a first side surface facing the first electrode portion; the second semiconductor portion includes a second side surface facing the first electrode portion; 2 . The semiconductor device according to claim 1 , wherein a first distance along the second direction between the first side surface and the second side surface is narrower than a first width along the second direction of at least a portion of the first insulating region.

5. The first semiconductor member further includes a seventh partial region, the third partial region is between the seventh partial region and the sixth partial region in the first direction, The second semiconductor member further includes a fourth semiconductor portion, the first electrode portion is located between the fourth semiconductor portion and the third semiconductor portion in the first direction, The second insulating member further includes a second insulating region, The semiconductor device according to claim 1 , wherein the second insulating region is between the fourth semiconductor portion and the third electrode in the first direction.

6. The crystallinity of the first semiconductor portion is higher than the crystallinity of the fourth semiconductor portion, or The semiconductor device according to claim 5 , wherein the first semiconductor portion includes a crystal, and the fourth semiconductor portion does not include a crystal.

7. The crystallinity of the fourth partial region is higher than the crystallinity of the seventh partial region, or The semiconductor device according to claim 5 , wherein the fourth partial region includes a crystal, and the seventh partial region does not include a crystal.

8. The first semiconductor member includes a first region, a second region, and a third region, The first region is provided between the second region and the third region in the first direction, the first partial region, the second partial region, the third partial region, the fourth partial region, and the fifth partial region are included in the first region, the sixth partial region is included in the second region, The seventh partial region is included in the third region, The crystallinity of the first region is higher than the crystallinity of the second region and higher than the crystallinity of the third region, or The semiconductor device according to claim 5 , wherein the first region includes a crystal, and the second region and the third region do not include a crystal.

9. The semiconductor device according to claim 8 , wherein the third electrode does not overlap the second region in the third direction and does not overlap the third region in the third direction.

10. The semiconductor device according to claim 8 , wherein the second electrode does not overlap the second region in the third direction and does not overlap the third region in the third direction.

11. the first semiconductor portion includes a first side surface facing the first electrode portion; the second semiconductor portion includes a second side surface facing the first electrode portion; 6. The semiconductor device according to claim 5, wherein a first distance along the second direction between the first side surface and the second side surface is narrower than a second width along the second direction of at least a portion of the second insulating region.

12. A plurality of the third electrodes are provided, A plurality of the first insulating regions are provided; a direction from one of the plurality of third electrodes to one of the plurality of first insulating regions is along the first direction; a direction from another one of the plurality of third electrodes to another one of the plurality of first insulating regions is along the first direction; A semiconductor device according to any one of claims 1 to 11, wherein in a first plane including the first direction and the second direction, the one of the plurality of first insulating regions is continuous with the other one of the plurality of first insulating regions.

13. Further comprising a third electrode connection portion; A plurality of the third electrodes are provided, The semiconductor device according to claim 1 , wherein said third electrode connection portion electrically connects said plurality of third electrodes to one another.

14. A ｚ１ G １－ｚ１ N (0<z1≦1, x2<z1), 2. The semiconductor device according to claim 1, wherein at least a portion of the first compound member is provided between the third portion region and the first insulating portion, between the first semiconductor portion and the first insulating portion, and between the first insulating portion and the second semiconductor portion.

15. A first electrode extending along a first direction; a second electrode extending along the first direction, the second direction from the first electrode to the second electrode intersecting the first direction; a third electrode extending along the first direction, a position of the third electrode in the second direction being between a position of the first electrode in the second direction and a position of the second electrode in the second direction, the third electrode including a first electrode portion; A ｘ１ G １－ｘ１ A first semiconductor member including N (0≦x1<1), the first semiconductor member including a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region, and a seventh partial region, the direction from the first partial region to the first electrode is along a third direction intersecting a plane including the first direction and the second direction, the direction from the second partial region to the second electrode is along the third direction, the direction from the third partial region to the first electrode portion is along the third direction, the position of the fourth partial region in the second direction is between the position of the first partial region in the second direction and the position of the third partial region in the second direction, the position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and the position of the second partial region in the second direction, the direction from the third partial region to the sixth partial region is along the first direction, and the direction from the seventh partial region to the sixth partial region is along the second direction; A ｘ２ G １－ｘ２ A second semiconductor member including N (0<x2≦1, x1<x2), the second semiconductor member including a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion, a direction from the fourth partial region to the first semiconductor portion is along the third direction, a direction from the fifth partial region to the second semiconductor portion is along the third direction, a direction from the seventh partial region to the third semiconductor portion is along the third direction, the first electrode portion is between the first semiconductor portion and the second semiconductor portion in the second direction, and the crystallinity of the first semiconductor portion is higher than the crystallinity of the third semiconductor portion, or the first semiconductor portion includes a crystal and the third semiconductor portion does not include a crystal; a first insulating member including a first insulating portion, the first insulating portion being provided between the third portion region and the first electrode portion, between the first semiconductor portion and the first electrode portion, and between the first electrode portion and the second semiconductor portion; A semiconductor device comprising a second insulating member including a first insulating region, the first insulating region being between the third semiconductor portion and the third electrode in the second direction.

16. The first semiconductor member further includes an eighth partial region, the sixth partial region is between the seventh partial region and the eighth partial region in the second direction, The second semiconductor member further includes a fourth semiconductor portion, a direction from the eighth portion region to the fourth semiconductor portion is along the third direction; The crystallinity of the second semiconductor portion is higher than the crystallinity of the fourth semiconductor portion, or the second semiconductor portion includes a crystal and the fourth semiconductor portion does not include a crystal; The second insulating member further includes a second insulating region, The semiconductor device according to claim 15 , wherein the second insulating region is provided between the third electrode and the fourth semiconductor portion in the second direction.

17. the third electrode further includes a second electrode portion and a third electrode portion; the first electrode portion is between the third portion region and the second electrode portion in the third direction, a position of the first insulating region in the first direction is between a position of the first electrode portion in the first direction and a position of the third electrode portion in the first direction, 16 . The semiconductor device according to claim 15 , wherein a third electrode portion length in the second direction of said third electrode portion is longer than a second electrode portion length in the second direction of said second electrode portion.

18. A plurality of the third electrodes are provided, 17. The semiconductor device according to claim 16, wherein either the first insulating region or the second insulating region is provided continuously between one of the plurality of third electrodes and another of the plurality of third electrodes.

19. a connection conductive portion extending along the second direction, a position of the first insulating region in the first direction is between a position of the first electrode portion in the first direction and a position of the connection conductive portion in the first direction, A plurality of the third electrodes are provided, The semiconductor device according to claim 15 , wherein the connecting conductive portion electrically connects one of the plurality of third electrodes to another of the plurality of third electrodes.

20. A ｚ１ G １－ｚ１ N (0<z1≦1, x2<z1), 17. The semiconductor device according to claim 15, wherein at least a portion of the first compound member is provided between the third portion region and the first insulating portion, between the first semiconductor portion and the first insulating portion, and between the first insulating portion and the second semiconductor portion.

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