Film deposition apparatus

Abstract

To provide a film deposition apparatus capable of preventing a detection window of a monitoring part from getting dirty.SOLUTION: A film deposition apparatus 100 includes a monitoring part 60 for monitoring a film thickness on a workpiece 10. The monitoring part 60 including a detection window 65 through which light for detecting the film thickness penetrates and a tabular part 68 casts the light on the workpiece 10 through the detection window 65 to detect the film thickness on the basis of the light radiated on the workpiece 10 and the film; and the tabular part 68 extends along the extent of a rotary table 31 while facing an installation surface 311 where the workpiece 10 of the rotary table 31 is installed.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to a film forming apparatus. [Background technology]

[0002] In the manufacturing process of various products such as semiconductors, displays, and optical disks, film deposition may be performed on workpieces such as wafers and glass substrates. For parts of smartphones, TVs, HUDs (Head Up Displays), projectors, etc., AR coatings (anti-reflection coatings) are deposited to suppress surface reflection. Band pass filters used in spectroscopic analysis and optical communications that transmit only certain light, and cold mirrors used as reflectors for lasers, UV lamps, and in-vehicle sensors are formed by film deposition.

[0003] There are various types of film formation apparatuses for film formation processing, one of which is a film formation apparatus using plasma. In a film formation apparatus using plasma, a target made of the material source of the film is placed in a film formation chamber, an inert gas is introduced into the film formation chamber, and a direct current voltage is applied. When ions of the inert gas that has been converted into plasma collide with the target, the material that constitutes the target is knocked out as atomic, molecular, or cluster-like particles (hereinafter also referred to as sputter particles). The sputter particles are deposited on a workpiece facing the target in the film formation chamber. Some film formation apparatuses have a film processing chamber in addition to the film formation chamber, and cause a chemical reaction such as oxidation or nitridation of the film formed in the film formation chamber.

[0004] A certain film thickness is necessary for the film on the workpiece to fully perform the required function. A method of achieving the target film thickness is known in which thin films are repeatedly formed on the workpiece to achieve the target film thickness overall. A film-forming device that stacks thin films has a rotating table that can rotate around the film-forming chamber. A workpiece is placed on the rotating table, and as the rotating table rotates, the workpiece passes through the film-forming chamber multiple times, with a film being stacked with each pass. If a film-processing chamber is provided, the workpiece passes through the film-forming chamber and the film-processing chamber multiple times, with film formation and film processing being repeated with each pass.

[0005] Conventionally, the deposition time required to reach the target film thickness is calculated in advance by simulation, calculation, actual measurement, etc., and deposition is stopped when this deposition time is reached. However, there is a risk of a difference between the target film thickness and the film thickness that is actually deposited. Therefore, a method of depositing a film while detecting the actual film thickness has been proposed (see, for example, Patent Document 1 and Patent Document 2). The proposed deposition device is equipped with a monitoring unit that monitors the film thickness. The monitoring unit has a detection window at a position facing the workpiece, and irradiates the workpiece and the film with light through the detection window. The monitoring unit detects the light transmitted through the workpiece and the film, and measures the film thickness based on the spectral transmittance. Alternatively, the monitoring unit receives the light reflected from the workpiece and the film through the detection window, and measures the film thickness by analyzing the reflected light. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Patent No. 3744003 [Patent Document 2] Japanese Patent Application Publication No. 04-92444 Summary of the Invention [Problem to be solved by the invention]

[0007] Generally, the film formation chamber is surrounded by a partition wall. Therefore, it is difficult for the sputter particles knocked out of the target to flow out of the film formation chamber. On the other hand, a gap through which the workpiece can pass is opened between the workpiece mounting surface of the turntable and the end of the partition wall so that the workpiece can pass through the film formation chamber by the turntable. Therefore, it is not possible to completely prevent the sputter particles from leaking out of the film formation chamber, and there is a risk that the sputter particles will reach the detection window of the monitoring unit installed outside the film formation chamber and adhere to the detection window of the monitoring unit.

[0008] If the detection window becomes dirty due to the adhesion of sputtered particles, it will not be possible to emit the intended amount of light toward the workpiece, and it will also be impossible to obtain a sufficient amount of transmitted or reflected light from the workpiece. Moreover, the monitoring unit will analyze light that contains information about the adhesion of the detection window. This may result in errors in the film thickness measurement results, or in the worst case, it may become impossible to detect the film thickness, causing problems with film thickness detection.

[0009] The detection window needs to be cleaned periodically so as not to interfere with film thickness detection. However, if cleaning frequency increases, the film formation apparatus needs to be stopped more frequently, which reduces the production efficiency of the film formation apparatus.

[0010] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a film forming apparatus that suppresses contamination of the detection window and improves detection accuracy and productivity. The present invention aims to provide **. [Means for solving the problem]

[0011] The film forming apparatus of the present invention is characterized in that it has a rotating table that rotates by placing a work on a mounting surface and a transport section that circulates and transports the work on a circumferential transport path by rotating the rotating table, a film forming chamber that faces the transport path and forms a film on the work, a film forming section that is arranged in the film forming chamber and has a target that is a material source for the film and a plasma generator that converts a sputtering gas introduced between the target and the rotating table into plasma, and sputters the target with the plasma to form a film on the work, and a monitoring section that monitors the thickness of the film on the work, the monitoring section being arranged outside the film forming chamber facing the transport path and having a detection window through which light for film thickness detection passes, a light projecting section that irradiates light through the detection window onto the work on which the film is formed, an analysis section that detects the thickness of the film based on the light irradiated onto the work and the film, and a plate-shaped section that is arranged outside the film forming chamber between the film forming chamber and the detection window and faces the mounting surface of the rotating table while extending along the mounting surface. Effect of the Invention

[0012] According to an embodiment of the present invention, a film forming apparatus is provided that can suppress contamination of a detection window and improve detection accuracy and productivity. [Brief description of the drawings]

[0013] [Figure 1] 1 is a perspective plan view showing a schematic configuration of a film forming apparatus according to an embodiment; [Diagram 2] 4 is a flowchart showing the operation of the film forming apparatus. [Diagram 3] FIG. 2 is a cross-sectional view taken along the line AA in FIG. 1, showing the inside of the film formation chamber and the film treatment chamber. [Figure 4] 2 is a block diagram showing a configuration of a monitoring unit included in the film forming apparatus. FIG. [Diagram 5] FIG. 2 is a cross-sectional view taken along line BB in FIG. 1, showing an installation state of the monitoring unit. [Figure 6] FIG. [Figure 7]10 is a schematic diagram showing flying particles attempting to pass between a plate-shaped portion and a rotating table. FIG. [Figure 8] FIG. [Figure 9] 10 is a schematic diagram showing flying particles that have reached the vicinity of a detection window. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a film forming apparatus according to the present invention will be described in detail with reference to the drawings.

[0015] (Entire device) 1 is a perspective plan view showing a schematic configuration of a film forming apparatus 100 according to the present embodiment. The film forming apparatus 100 is an apparatus for forming a film on a workpiece 10. The workpiece 10 is, but is not limited to, for example, a glass substrate or a resin substrate. The film formed on the workpiece 10 by the film forming apparatus 100 is a compound film such as an oxide or nitride film. The film forming apparatus 100 includes a chamber 20, a transfer unit 30, a film forming chamber 4, a film treatment chamber 5, a monitoring section 6, a load lock unit 70, and a control device 80.

[0016] The chamber 20 is a cylindrical container that can be evacuated. The transfer unit 30 has a rotating table 31 concentric with the chamber 20 inside the chamber 20. The workpiece 10 carried in from the load lock unit 70 is placed on the rotating table 31. The rotating table 31 circulates and transfers the workpiece 10. The rotating table 31 moves the workpiece 10 along a transfer path L, which is a circular trajectory.

[0017] The chamber 20 is divided into a plurality of sections. The film forming chamber 4, the film treatment chamber 5, and the monitoring section 6 are assigned to each section in the circumferential direction of the chamber 20 in this order, and face the transport path L of the work 10. The film forming chamber 4 may be arranged in a continuous manner. The film forming chamber 4 is a section separated by a partition wall 22, and the film treatment chamber 5 is a section separated by a cylindrical body 51. The monitoring section 6 is a section separated by the partition wall 22 located most upstream in the transport direction and the side wall of the cylindrical body 51 located downstream in the transport direction. In other words, the monitoring section 6 is a section between the film forming chamber 4 located upstream in the transport direction and the film treatment chamber 5, and is a section located downstream in the transport direction from the film treatment chamber 5. The work 10 is repeatedly circulated between the film forming chamber 4, the film treatment chamber 5, and the monitoring section 6 by the transport unit 30.

[0018] The film formation chamber 4 is a section in which a film formation unit 40 is arranged, and forms a film on the workpiece 10. The film formation unit 40 uses plasma to knock out sputter particles from a target 42 composed of a film material source, and deposits them on the workpiece 10 to form a film. The film treatment chamber 5 is a section in which a film treatment unit 50 is arranged, and performs film treatment on the film formed on the workpiece 10 that has passed through the film formation chamber 4 by the transport unit 30. The film treatment unit 50 generates plasma in a process gas, and produces a compound film by chemically reacting ions in the plasma with the film.

[0019] For example, two film formation chambers 4 are arranged consecutively in the transport direction. The materials of the targets 42 arranged in the two film formation chambers 4 may be different. This allows two different types of films to be laminated on the workpiece 10. Note that only one film formation chamber 4 may be arranged, or three or more film formation chambers may be arranged consecutively. In addition, in the multiple film formation chambers 4, targets 42 of different materials may be arranged, or targets 42 of the same type of material may be arranged.

[0020] In the monitoring section 6, the thickness of the compound film formed on the workpiece 10 is optically measured. Various known film thickness detection methods can be applied as long as they are optical measurement methods. For example, the film thickness is detected by shining light on the workpiece 10 and detecting the reflected light from the workpiece 10 based on, for example, the peak-valley method (PV method). In the monitoring section 6, a detection window 65 is installed facing the rotary table 31 (see FIG. 3). The detection window 65 is a light-transmitting member such as quartz or sapphire. Light is irradiated through this detection window 65 onto the workpiece 10 passing directly below the detection window 65, and the reflected light from the workpiece 10 is acquired through this detection window 65. That is, the detection window 65 separates the space in which the workpiece 10 exists from the space in which various optical components are arranged, while ensuring the passage of light between the two spaces.

[0021] The control device 80 is a processing device including a PLC (Programmable Logic Controller) and a CPU (Central Processing Unit), and stores a program describing the control contents. The control device 80 controls each component of the film forming apparatus 100, and operates the film forming unit 40, the film processing unit 50, and the turntable 31 until the film thickness on the workpiece 10 detected in the monitoring section 6 reaches the target film thickness.

[0022] 2 is a flowchart showing the overall operation of the film forming apparatus 100 controlled by the control device 80. The workpiece 10 is carried into the chamber 20 from the load lock unit 70 (step S01). The pressure inside the chamber 20 is reduced to a predetermined pressure (step S02). After the pressure inside the chamber 20 is reduced, the control device 80 rotates the turntable 31 on which the workpiece 10 is placed (step S03).

[0023] When the film forming apparatus 100 has two film forming chambers 4, the control device 80 operates the film forming unit 40 in one film forming chamber 4 and stops the film forming unit 40 in the other film forming chamber 4 (step S04). In the film forming chamber 4 that is in operation, a film is formed on the workpiece 10 (step S05). For example, a silicon (Si) target 42 is installed in one film forming chamber 4, and a silicon film is formed on the workpiece 10. Each time the workpiece 10 passes through the film forming chamber 4 in operation, the film on the surface of the workpiece 10 becomes thicker. The workpiece 10 on which a film has been formed in the film forming chamber 4 that is in operation heads to the film processing chamber 5 each time it passes through the film forming chamber 4, and the film on the workpiece 10 is processed (step S06). For example, plasma is generated in a process gas containing oxygen gas, and oxygen ions are collided with the silicon film to oxidize the silicon film.

[0024] When the workpiece 10 passes through the film forming chamber 4 and film processing chamber 5 in operation and enters the monitoring section 6, the film thickness of the compound film formed on the workpiece 10 is detected in the monitoring section 6 (step S07). The control device 80 compares the detected film thickness with the target film thickness (step S08). The target film thickness is stored in advance by the control device 80. If the detected film thickness does not reach the target film thickness (step S08, No), the control device 80 maintains the rotation of the turntable 31 and repeats steps S05 to S08 without changing the film forming unit 40 currently in operation.

[0025] When the detected film thickness reaches the target film thickness (step S08, Yes), the control device 80 stops the operation of the film formation unit 40 in the current film formation chamber 4 and operates the film formation unit 40 in the next film formation chamber 4 (step S10) if there is a film formation unit 40 to be operated next, i.e., a film formation unit 40 that has not yet been operated (step S09, Yes). Then, steps S05 to S08 are repeated, and if the detected film thickness reaches the target film thickness (step S08, Yes), the control device 80 ends the film formation and film processing on the workpiece 10. On the other hand, if there is no film formation unit 40 to be operated next (step S09, No), the control device 80 performs a process to end the film formation and film processing on the workpiece 10.

[0026] For example, a niobium (Nb) target 42 is installed in the other film formation chamber 4, and a niobium film is formed on the workpiece 10. In the film treatment chamber 5, oxygen ions are collided with the niobium film to oxidize the niobium film. As a result, a silicon oxide film having a target thickness is formed on the lower layer of the workpiece 10, and a niobium oxide film having a target thickness is formed on the upper layer of the silicon oxide film. The film formation chambers 4 are not limited to two chambers, and three or more film formation chambers 4 may be arranged. Every time the control device 80 detects that the compound film has reached the target thickness in the monitoring section 6, it is sufficient to switch the film formation chamber 4 to be operated and repeat steps S05 to S08.

[0027] (Chamber) The chamber 20 will be described in more detail. As shown in Fig. 3, the chamber 20 is surrounded by a disk-shaped ceiling 20a, a disk-shaped inner bottom surface 20b, and an annular inner peripheral surface 20c. The chamber 20 is provided with an exhaust port 21. An exhaust unit 90 is connected to the exhaust port 21. The exhaust unit 90 has piping, and a pump, a valve, etc. (not shown). By exhausting air by the exhaust unit 90 through the exhaust port 21, the inside of the chamber 20 is depressurized to a vacuum.

[0028] (Transportation section) The conveying unit 30 will be described in more detail. The conveying unit 30 has a rotating table 31 and a motor 32. As shown in FIG. 3, the rotating table 31 of the conveying unit 30 has a disk shape and is expanded to a large extent so as not to come into contact with the inner peripheral surface 20c. The conveying unit 30 is provided with a motor 32 that rotates the rotating table 31, and the motor 32 rotates the rotating table 31 continuously at a predetermined rotation speed with the circular center of the rotating table 31 as the rotation axis. In this embodiment, the motor 32 rotates the rotating table 31 counterclockwise as shown in FIG. 1. As a result, the conveying unit 30 circulates and conveys the workpiece 10 along the conveying path L, which is a circular trajectory. That is, the conveying unit 30 circulates and conveys the workpiece 10 so as to repeatedly pass through the film forming chamber 4, the film processing chamber 5, and the monitoring section 6 in this order.

[0029] The rotating table 31 is provided with holding units 33. The holding units 33 are grooves, holes, protrusions, jigs, holders, etc., that are arranged at equal circumferential positions on the installation surface 311 of the rotating table 31, and hold a tray 34 carrying the workpieces 10 by a mechanical chuck or an adhesive chuck. The workpieces 10 are arranged, for example, in a matrix on the tray 34, and six holding units 33 are arranged on the rotating table 31 at intervals of 60°.

[0030] (Load lock section) The load lock unit 70 is a device that, while maintaining the vacuum of the chamber 20, transports the tray 34 carrying the unprocessed workpieces 10 from the outside into the chamber 20 by a transport means not shown, and transports the tray 34 carrying the processed workpieces 10 out of the chamber 20. This load lock unit 70 can have a well-known structure, so a description thereof will be omitted.

[0031] (Film forming chamber) The film formation chamber 4 will be described in more detail. As shown in Fig. 3, a film formation section 40 is disposed in the film formation chamber 4. The film formation section 40 includes a sputtering source and a plasma generator. The sputtering source includes a target 42, a backing plate 43, and an electrode 44. The plasma generator includes a power supply section 46 and a sputtering gas inlet section 49.

[0032] The target 42 is a plate-like member, and is provided at a distance on the transport path L of the workpiece 10 placed on the turntable 31. The surface of the target 42 is supported by the ceiling 20a of the chamber 20 so as to face the workpiece 10 placed on the turntable 31. For example, three targets 42 are provided, and the three targets 42 are provided at positions aligned on the vertices of a triangle in a plan view (see FIG. 1).

[0033] The backing plate 43 is a support member that holds the targets 42. This backing plate 43 holds each target 42 individually. The electrode 44 is a conductive member for applying power to each target 42 individually from outside the chamber 20, and is electrically connected to the targets 42. The power applied to each target 42 can be changed individually. In addition, the sputtering source is appropriately equipped with a magnet, a cooling mechanism, etc. as necessary.

[0034] The power supply unit 46 is, for example, a DC power supply that applies a high voltage, and is electrically connected to the electrode 44. The power supply unit 46 applies power to the target 42 through the electrode 44. The rotary table 31 has the same potential as the grounded chamber 20, and a potential difference occurs when a high voltage is applied to the target 42. The power supply unit 46 may also be an RF power supply for performing high-frequency sputtering.

[0035] The sputtering gas introduction unit 49 has a pipe 48 and a gas inlet 47, and is connected to a supply source of the sputtering gas G1, such as a cylinder, which is a facility of a factory or the like. The supply source of the sputtering gas G1 may be held on the film forming apparatus 100 side. The pipe 48 of the sputtering gas introduction unit 49 is connected to the supply source of the sputtering gas G1, airtightly penetrates the chamber 20, and extends into the chamber 20, with its end opening as a gas inlet 47. The gas inlet 47 opens between the turntable 31 and the target 42, and introduces the sputtering gas G1 for film formation into the processing space 41 formed between the turntable 31 and the target 42. An inert gas can be used as the sputtering gas G1, and argon gas or the like is preferable.

[0036] As shown in Fig. 1 and Fig. 3, the inside of the chamber 20 is divided by a partition wall 22. The partition wall 22 is a rectangular wall plate arranged radially from the center of a cylindrical shape, and extends from the ceiling 20a toward the inner bottom surface 20b, but does not reach the inner bottom surface 20b. That is, a cylindrical space is secured on the inner bottom surface 20b side. A rotating table 31 is disposed in this cylindrical space. The lower end of the partition wall 22 faces a mounting surface 311 of the rotating table 31 on which the workpiece 10 is placed, with a gap provided so that the workpiece 10 placed on the rotating table 31 can pass through. The partition wall 22 divides the film formation chamber 4.

[0037] In such a film forming section 40, when a sputtering gas G1 is introduced from a sputtering gas introduction section 49 and a power supply section 46 applies a high voltage to a target 42 through an electrode 44, the sputtering gas G1 introduced into a processing space 41 formed between the rotary table 31 and the target 42 turns into plasma, generating active species such as ions. The ions in the plasma collide with the target 42, and the material constituting the target 42 is knocked out as sputter particles.

[0038] The workpiece 10 passes through this processing space 41 while being circulated and transported by the turntable 31. The sputtered particles are deposited on the workpiece 10 as the workpiece 10 passes through the processing space 41, and a film made of the sputtered particles is formed on the workpiece 10. The workpiece 10 is circulated and transported by the turntable 31, and a film is formed by repeatedly passing through this processing space 41. The thickness of the film deposited each time it passes through the film forming section 40 depends on the processing rate of the film processing section 50, but it is preferable that it is a thin film, for example, at the 1 to 2 atom level (5 nm or less). By circulating and transporting the workpiece 10 multiple times, the thickness of the film increases, and a film of a predetermined thickness is formed on the workpiece 10.

[0039] (Membrane treatment room) The film processing chamber 5 will be described in more detail. As shown in Fig. 3, the film processing section 50 of the film processing chamber 5 includes a plasma generator including a cylindrical body 51, a window member 52, an antenna 53, an RF power source 54, a matching box 55, and a process gas introduction section 58. The film processing section 50 also includes the process gas introduction section 58. The process gas introduction section 58 has a pipe 57 and a gas introduction port 56, and is connected to a supply source of the process gas G2, such as a cylinder, which is a facility in the factory. The supply source of the process gas G2 may be held on the film forming apparatus 100 side.

[0040] As shown in FIG. 1 and FIG. 3, the cylindrical body 51 is a cylinder with a rounded rectangular cross section and has an opening. The cylindrical body 51 is fitted into the ceiling 20a of the chamber 20 so that the opening faces the turntable 31 side and protrudes into the internal space of the chamber 20. The cylindrical body 51 is made of the same material as the turntable 31. The window member 52 is a flat plate of a dielectric material such as quartz having a shape similar to the horizontal cross section of the cylindrical body 51. The window member 52 is provided so as to close the opening of the cylindrical body 51, and separates the inside of the cylindrical body 51 from a processing space 59 into which the process gas G2 containing oxygen gas in the chamber 20 is introduced. The processing space 59 is a space formed between the turntable 31 and the inside of the cylindrical body 51 in the film processing section 50. The workpiece 10 circulated and transported by the turntable 31 repeatedly passes through the processing space 59, thereby performing an oxidation process. The window member 52 may be a dielectric material such as alumina, or a semiconductor material such as silicon.

[0041] The antenna 53 is a conductor wound into a coil shape, and is disposed in the internal space of the cylindrical body 51 isolated from the processing space 59 in the chamber 20 by the window member 52, and generates an electric field by passing an alternating current through it. It is preferable that the antenna 53 is disposed near the window member 52 so that the electric field generated by the antenna 53 is efficiently introduced into the processing space 59 through the window member 52. An RF power supply 54 that applies a high frequency voltage is connected to the antenna 53. A matching box 55, which is a matching circuit, is connected in series to the output side of the RF power supply 54. The matching box 55 stabilizes the plasma discharge by matching the impedance on the input side and the output side.

[0042] The piping 57 of the process gas introduction unit 58 is connected to a supply source of the process gas G2, airtightly penetrates the chamber 20, and extends into the chamber 20, with its end opening as a gas introduction port 56. The gas introduction port 56 opens into a processing space 59 between the window member 52 and the rotary table 31, and introduces the process gas G2. The process gas G2 contains, for example, oxygen or nitrogen. In addition to oxygen gas or nitrogen gas, the process gas G2 may contain an inert gas such as argon gas.

[0043] In the film processing unit 50, a high-frequency voltage is applied to the antenna 53 from the RF power supply 54. This causes a high-frequency current to flow through the antenna 53, generating an electric field due to electromagnetic induction. The electric field is generated in the processing space 59 through the window member 52, generating an inductively coupled plasma of the process gas G2. At this time, the process gas G2 is also ionized, and the ions collide with the film on the workpiece 10 and bond with the atoms that make up the film. If the process gas G2 contains oxygen, the film processing unit 50 oxidizes the film on the workpiece 10. If the process gas G2 contains nitrogen, the film processing unit 50 nitrides the film on the workpiece 10.

[0044] (Surveillance area) The monitoring of the film thickness will be described in more detail. FIG. 4 is a block diagram showing the configuration of the monitoring unit 60 provided in the film forming apparatus 100. As shown in FIG. 4, the film forming apparatus 100 is provided with a monitoring unit 60 that detects the film thickness formed on the workpiece 10. The monitoring unit 60 includes a detection window 65 arranged in the monitoring section 6 as a component, irradiates light onto the workpiece 10 through the detection window 65, acquires reflected light from the workpiece 10 through the detection window 65, and analyzes the reflected light to detect the film thickness. The control device 80 compares the film thickness detected by the monitoring unit 60 with the target film thickness, judges whether the film formation should be continued or ended, and controls each element of the film forming apparatus 100 based on the judgment result. In addition to the detection window 65, the monitoring unit 60 includes a light projection unit 62, a transmission unit 64, a spectroscopic unit 63, and an analysis unit 61.

[0045] The light projecting unit 62 is a light source. The light emitted by the light projecting unit 62 passes through the detection window 65 and reaches the workpiece 10. For example, the wavelength band of the light is in the range of 200 nm to 800 nm, and ultraviolet light having a wavelength of 400 nm or less may be emitted. Examples of the light projecting unit 62 include a xenon lamp, a mercury xenon lamp, and a halogen lamp. A mercury xenon lamp can irradiate light in the ultraviolet region and can increase the luminous flux.

[0046] The spectroscopic unit 63 obtains a spectrum of the reflected light by dividing the reflected light from the workpiece 10 that has passed through the detection window 65 into light of each wavelength. Typically, the spectroscopic unit 63 is a prism or a diffraction grating. The analysis unit 61 analyzes the spectrum of the reflected light that has passed through the spectroscopic unit 63 to detect the film thickness on the workpiece 10. The analysis unit 61 includes light receiving elements such as a CCD or a CMOS that individually receive the light of each wavelength divided by the spectroscopic unit 63, and a processor such as a CPU.

[0047] The analysis unit 61 can apply various known film thickness detection methods as long as they are optical measurement methods, and detects the film thickness by, for example, the peak-valley method (PV method). There is an optical path difference between the reflected light from the film surface and the reflected light from the surface of the workpiece 10. When this optical path difference is an integer multiple of a certain wavelength, among the interference light of the reflected light from the surface of the workpiece 10 and the reflected light from the film surface, the light of that wavelength component is in phase and is added in a constructive direction, and the light of the wavelength component that is 1 / 2 wavelength out of phase is subtracted in a destructive direction. The analysis unit 61 identifies these wavelengths and detects the film thickness from 2nd=iλ (d is the film thickness, i is an integer, and λ is the identified wavelength).

[0048] The transmission section 64 is disposed between the light-projecting section 62 and the detection window 65, and between the detection window 65 and the spectroscopic section 63. This transmission section 64 guides the light of the light-projecting section 62 incident from one end toward the detection window 65 at the other end. The transmission section 64 also receives, at the other end, the reflected light from the work 10 that has passed through the detection window 65, and guides the light toward the spectroscopic section 63. An example of such a transmission section 64 is an optical fiber, but is not limited to this, and may be an optical system including various optical components such as lenses and mirrors.

[0049] 5 is a schematic diagram showing the installation state of the monitoring unit 60. As shown in FIG. 5, in the monitoring section 6, a cylindrical housing 67 is attached to the ceiling 20a of the chamber 20. The housing 67 extends from the ceiling 20a toward the installation surface 311 on which the work 10 of the turntable 31 is placed. The open end of the housing 67 on the installation surface 311 side is closed by a holder 66. The detection window 65 is held by the holder 66 via a sealing member. By being held by the holder 66, the detection window 65 faces the installation surface 311 of the turntable 31 while being spaced apart from the installation surface 311.

[0050] The detection window 65 faces the trajectory of the workpiece 10 moving on the rotary table 31 on the installation surface 311. In particular, in order to obtain a reflected light with a light amount that provides a good S / N ratio, it is preferable to position the detection window 65 on the inner circumference side of the rotary table 31. That is, the housing 67 is attached to the inner circumference side of the rotary table 31. The inner circumference side of the rotary table 31 is closer to the rotation center than the midpoint of the line segment along the radius R from the rotation center to the outer periphery of the rotary table 31. The circumferential speed is slow on the inner circumference side of the rotary table 31. Therefore, the workpiece 10 continues to stay directly under the detection window 65 for a time longer than the time required to obtain a reflected light with a light amount that provides a good S / N ratio.

[0051] The transmission unit 64 is disposed within the housing 67, with one end facing the detection window 65. The transmission unit 64 passes through the housing 67 and is drawn out from the ceiling 20a of the chamber 20 to the outside. With the transmission unit 64 and the detection window 65, the light transmitted by the transmission unit 64 passes through the detection window 65 and heads toward the workpiece 10 moving directly below the detection window 65, and the light headed toward the workpiece 10 is reflected by the surface of the workpiece 10 or a film formed on the workpiece 10, passes through the detection window 65, and is transmitted by the transmission unit 64.

[0052] FIG. 6 is an enlarged view of the monitoring section 6. As shown in FIG. 5 and FIG. 6, a plate-shaped portion 68 is attached around the detection window 65. The plate-shaped portion 68 is a wide ring-shaped plate with the detection window 65 at its center. The plate-shaped portion 68 has a facing surface 681 facing the installation surface 311 of the rotary table 31. The facing surface 681 has a side peripheral surface of the holder 66 as a base end, spreads around the detection window 65, and extends along the installation surface 311 of the rotary table 31. The plate-shaped portion 68 preferably extends parallel to the installation surface 311. As long as the plate-shaped portion 68 is unlikely to bend, there is no particular limitation on the material or thickness of the plate-shaped portion 68. For example, an aluminum plate having a thickness of 5 mm may be used as the plate-shaped portion 68.

[0053] The plate-shaped portion 68 is disposed at a distance H from the deposition surface of the workpiece 10 mounted on the rotary table 31. The distance H is set to a dimension at least such that the passing workpiece 10 does not come into contact with the plate-shaped portion 68, but is preferably as narrow as possible, and may be set to, for example, 5 mm. The distance H may be set to the same as the distance between the end of the partition wall 22 on the rotary table 31 side and the deposition surface of the workpiece 10. The length D of the plate-shaped portion 68, i.e., the width in the ring radial direction from the inner peripheral edge to the outer peripheral edge of the plate-shaped portion 68, is equal to or greater than the mean free path of the sputter particles, i.e., the molecules of the material constituting the target.

[0054] Furthermore, the opposing surface 681 of the plate-shaped portion 68 preferably has a surface roughness of 4 μm or more and 14 μm or less in arithmetic mean roughness Ra. The opposing surface 681 of the stainless steel (SUS) plate-shaped portion 68 more preferably has a surface roughness of 4 μm or more and 10 μm or less in arithmetic mean roughness Ra. The opposing surface 681 of the aluminum plate-shaped portion 68 more preferably has a surface roughness of 6 μm or more and 14 μm or less in arithmetic mean roughness Ra. The opposing surface 681 with this surface roughness can be formed, for example, by blasting with an abrasive having a grain size of about #20 or more and #60 or less.

[0055] FIG. 7 is a schematic diagram showing the function of the plate-shaped portion 68. Flying particles 421 are floating around the detection window 65. The flying particles 421 are, for example, sputtered particles that have leaked out of the film-forming chamber 4 and are floating. Before reaching the detection window 65, the flying particles 421 must pass through a narrow and long space defined by the plate-shaped portion 68 and the installation surface 311 of the turntable 31. Therefore, many of the flying particles 421 come into contact with the plate-shaped portion 68 before reaching the detection window 65 and are captured by the plate-shaped portion 68. Many of the flying particles 421 are blocked by the plate-shaped portion 68 and cannot reach the detection window 65. In this way, the plate-shaped portion 68 captures the flying particles 421 and suppresses contamination of the detection window 65.

[0056] In particular, if the plate-shaped portion 68 has a length D equal to or greater than the mean free path of the flying particles 421, the probability of capturing the flying particles 421 is increased, and the contamination of the detection window 65 is further suppressed. This is because the interval H from the film-forming surface of the workpiece 10 to the plate-shaped portion 68 is a very narrow distance, and even if the flying particles 421 are incident obliquely toward the detection window 65 from the interval H, if the plate-shaped portion 68 has a length equal to or greater than the mean free path, the possibility of the flying particles 421 being captured on the way is increased. In addition, the length D of the plate-shaped portion 68 is preferably greater than 20 cm, and more preferably 30 cm or more. When the inventor confirmed through an experiment, when the interval H from the film-forming surface of the workpiece 10 mounted on the rotating table 31 to the plate-shaped portion 68 was 5 mm and the length D of the plate-shaped portion 68 was 30 cm, cleaning of the detection window 65 was not necessary for at least three months.

[0057] In addition, the facing surface 681 of the plate-shaped portion 68 has a surface roughness of 4 μm or more and 10 μm or less in arithmetic mean roughness Ra. Therefore, the probability that the flying particles 421 that come into contact with the plate-shaped portion 68 will adhere to the facing surface 681 increases. Furthermore, even if the flying particles 421 do not adhere to the facing surface 681 of the plate-shaped portion 68, the reflection direction of the flying particles 421 will be different compared to when the facing surface 681 is smooth. That is, the flying particles 421 that are reflected in a direction different from the detection window 65 will increase. Therefore, the probability that the flying particles 421 that could not be captured by the facing surface 681 will be reflected toward the detection window 65 will also decrease. Therefore, the facing surface 681 having a surface roughness of 4 μm or more and 10 μm or less in arithmetic mean roughness Ra can further reduce the flying particles 421 that enter toward the detection window 65.

[0058] As will be described with reference to Figs. 8 and 9, the flying particles 421 incident toward the detection window 65 can be further reduced. Fig. 8 is an enlarged view of the vicinity of the detection window 65. As shown in Fig. 8, the detection window 65 has an outer end surface 651. The outer end surface 651 is a surface facing the installation surface 311 of the rotary table 31, and is a surface through which light is emitted to the workpiece 10 and into which reflected light from the workpiece 10 is incident. The holder 66 also has a surrounding wall 661 that surrounds the entire periphery of the detection window 65. The detection window 65 is fitted into a hole defined by the surrounding wall 661, and the entire periphery is supported by the inner peripheral surface of the surrounding wall 661.

[0059] The surrounding wall 661 extends toward the installation surface 311 of the turntable 31 so as not to cover the outer end face 651, and protrudes over the entire periphery toward the installation surface 311 of the turntable 31 further than the outer end face 651. In other words, the distance between the end of the surrounding wall 661 and the installation surface 311 is narrower than the distance between the outer end face 651 and the installation surface 311 of the turntable 311. In short, the outer end face 651 is positioned recessed from the tip of the surrounding wall 661.

[0060] The outer end surface 651 of the detection window 65 is an inclined surface inclined with respect to the central axis 65A of the detection window 65. The inclined outer end surface 651 faces the direction in which the film formation chamber 4 exists, that is, the opposite direction to the inner circumference side of the turntable 31. In other words, the outer end surface 651 is inclined so as to face the outer circumference side of the turntable 31. When the monitoring section 6 and the film formation chamber 4 are located on the same circumference, the direction away from the film formation chamber 4 faces the opposite direction to the inner circumference side of the turntable 31. The outer end surface 651 faces the opposite direction to the inner circumference side of the turntable 31 in order to reduce the area ratio of the outer end surface 651 exposed in the direction from which more flying particles 421 fly. Therefore, it is preferable that the outer end surface 651 faces in the opposite direction by 180 degrees, but as long as it faces in the opposite direction to the inner circumference of the turntable 31 by even 1 degree based on the radial direction from the center of the chamber 20 to the outside, the outer end surface 651 can be oriented in a direction away from all the film formation chambers 4 regardless of where the film formation chambers 4 are located on the same circumference. This reduces the area ratio of the outer end surface 651 exposed in the direction from which more of the incoming particles 421 fly in.

[0061] FIG. 9 is a schematic diagram showing the positional relationship between the surrounding wall 661 and the outer end surface 651, and the action based on the orientation of the outer end surface 651. As shown in FIG. 9, the probability of the flying particles 421 reaching the vicinity of the detection window 65 without being captured by the plate-shaped portion 68 is not zero. However, the outer end surface 651 of the detection window 65 is recessed within the area surrounded by the surrounding wall 661. Therefore, the path leading to the detection window 65 has a labyrinth structure that starts from the outer periphery of the plate-shaped portion 68 and bends immediately below the detection window 65. Therefore, even if the flying particles 421 can pass between the plate-shaped portion 68 and the installation surface 311 of the turntable 31, they cannot reach the detection window 65 unless they can change course toward the detection window 65 by reflection or the like, and the adhesion of the flying particles 421 to the detection window 65 is further suppressed.

[0062] However, in order to obtain a sufficient amount of reflected light required for analysis, it is preferable that the light emitted from the detection window 65 is irradiated onto one point on the workpiece 10. If the distance between the detection window 65 and the surface of the workpiece 10 is long, the light will diffuse, so the distance between the detection window 65 and the surface of the workpiece 10 is preferably about 40 mm. In addition, the position of the tip of the surrounding wall 661 is limited to the height at which the workpiece 10 can pass. In that case, the distance by which the outer end face 651 recedes into the inside of the surrounding wall 661 (the distance between the tip of the surrounding wall 661 and the outer end face 651) is preferably a maximum of 40 mm from an optical standpoint.

[0063] There may be some flying particles 421 that fly toward the area surrounded by the surrounding wall 661 at a steep angle by repeatedly reflecting between the plate-shaped portion 68 and the installation surface 311 of the turntable 31. However, the outer end surface 651 is inclined with respect to the central axis 65A of the detection window 65 and faces in the opposite direction to the direction of the film formation chamber 4, which is the source of the flying particles 421. Therefore, the flying particles 421 that fly from the film formation chamber 4 side cannot enter the outer end surface 651 unless they face the outer end surface 651 at an angle close to perpendicular toward the area surrounded by the surrounding wall 661, and are captured by the inner circumferential surface of the surrounding wall 661. Therefore, adhesion of the flying particles 421 to the detection window 65 is further suppressed. The inner circumferential surface of the surrounding wall 661 may also be roughened. If the inner circumferential surface is roughened, the probability that the flying particles 421 are captured by the inner circumferential surface of the surrounding wall 661 increases.

[0064] As shown in FIG. 8 and FIG. 9, the inner end surface 652 of the detection window 65, that is, the end surface opposite to the outer end surface 651 and facing the internal space of the housing 67, may be perpendicular to or oblique to the central axis 65A of the detection window 65. Preferably, the inner end surface 652 is parallel to the outer end surface 651 inclined with respect to the central axis 65A of the detection window 65. As shown in FIG. 8, the light L1 emitted from the transmission section 64 is parallel to the central axis 65A of the detection window 65, and if the outer end surface 651 and the inner end surface 652 are parallel, when it passes through the detection window 65 and is emitted, it returns parallel to the central axis 65A of the detection window 65 and enters the workpiece 10 perpendicularly. In addition, the reflected light from the workpiece 10 can enter the transmission section 64 by following the same optical path as the light emitted from the transmission section 64.

[0065] 8, if the inner end face 652 is inclined with respect to the central axis 65A of the detection window 65, the light L2 emitted from the transmission part 64 and reflected by the inner end face 652 of the detection window 65 will travel toward, for example, the inner circumferential surface of the housing 67, and will not easily return to the transmission part 64, and will not easily interfere with the reflected light from the surface of the workpiece 10 or the film surface. Since the outer end face 651 is also inclined, the light L3 traveling inside the detection window 65 and reflected by the outer end face 651 will also travel toward, for example, the inner circumferential surface of the housing 67 or the inner circumferential surface of the holder 66, and will not easily return to the transmission part 64, and will not easily interfere with the reflected light from the surface of the workpiece 10 or the film surface. Therefore, the accuracy of film thickness detection is improved.

[0066] In order to direct the light reflected by outer end face 651 and inner end face 652 in a direction other than the direction of incidence to transmission section 64, it is preferable that the inclination angle of outer end face 651 and inner end face 652 is 1.5° or more and 45° or less with respect to central axis 65A of detection window 65. Within this range, the light reflected by outer end face 651 and inner end face 652 is unlikely to return to transmission section 64.

[0067] (effect) In this manner, the film forming apparatus 100 is provided with a monitoring unit 60 that monitors the film thickness on the workpiece 10. The monitoring unit 60 includes a detection window 65, a light projecting unit 62, and an analysis unit 61. The detection window 65 is disposed on the transport path L of the workpiece 10 by the transport unit 30 and outside the film forming chamber 4, and transmits light for film thickness detection. Such a monitoring unit 60 further includes a plate-shaped portion 68. The plate-shaped portion 68 faces the installation surface 311 of the turntable 31 on which the workpiece 10 is installed, and extends along the installation surface 311 of the turntable 31.

[0068] As a result, a space defined by the plate-shaped portion 68 and the installation surface 311 of the turntable 31 exists between the film forming portion and the detection window 65. Many of the incoming particles 421 passing through this space are captured by the plate-shaped portion 68 before reaching the detection window 65. This makes it possible to suppress adhesion of the incoming particles 421 to the detection window 65. By suppressing adhesion of the incoming particles 421 to the detection window 65, the accuracy of detecting the film thickness on the workpiece 10 is improved and the frequency of cleaning the detection window 65 is reduced, thereby improving the operating rate of the film forming apparatus 100.

[0069] The plate-shaped portion 68 is preferably provided around the detection window 65. By providing the plate-shaped portion 68 around the detection window 65, the area of ​​the plate-shaped portion 68 required to prevent the incoming particles 421 from reaching the detection window 65 can be minimized. However, it is only necessary to prevent the sputtered particles leaking from the film formation chamber 4 from reaching the detection window 65, and the plate-shaped portion 68 can be provided on the route along which the sputtered particles reach the detection window 65. That is, the plate-shaped portion 68 can be provided between the film formation chamber 4 and the detection window 65 on the transport path L.

[0070] For example, the plate-shaped portion 68 may be provided at the lower end of the partition wall 22 that defines the film formation chamber 4. In this case, the plate-shaped portion 68 extends from the partition wall 22 as a base end toward the outside of the film formation chamber 4. Alternatively, the plate-shaped portion 68 may be provided at the lower end of the cylindrical body 51 that defines the film treatment chamber 5. In this case, the plate-shaped portion 68 extends from the cylindrical body 51 as a base end toward the outside of the film treatment chamber 5. Furthermore, the plate-shaped portion 68 may extend into the monitoring section 6.

[0071] Furthermore, the plate-shaped portion 68 is in the shape of a ring that spreads radially from the entire periphery of the detection window 65, but it is sufficient that the plate-shaped portion 68 is disposed on the route along which the sputtered particles reach the detection window 65. That is, if the direction in which the sputtered particles fly is localized, the plate-shaped portion 68 may spread in the localized direction. For example, in this film forming apparatus 100, if there are no or few flying particles 421 flying from the load lock unit 70 side, the plate-shaped portion 68 may be in a shape that extends only toward the film processing chamber 5 side. For example, it may be in a half-moon shape.

[0072] Moreover, the plate-like portion 68 extends along the mounting surface 311 of the turntable 31 with a length equal to or greater than the mean free path of the molecules of the material that constitutes the target 42. This increases the probability that the incoming particles 421 will come into contact with the plate-like portion 68. Therefore, the plate-like portion 68 can capture more incoming particles 421 and further suppress adhesion of the particles to the detection window 65.

[0073] Furthermore, the plate-shaped portion 68 has an opposing surface facing the installation surface 311 of the turntable 31 and having a surface roughness of 4 μm or more and 14 μm or less in arithmetic mean roughness Ra. This prevents the incoming particles 421 from being reflected by the plate-shaped portion 68, increasing the probability that the incoming particles 421 will remain on the plate-shaped portion 68. Therefore, the plate-shaped portion 68 can capture more incoming particles 421 and further prevent them from adhering to the detection window 65.

[0074] Further, the detection window 65 faces the installation surface 311 of the turntable 31 and has an outer end surface 651 through which the light from the light projecting unit 62 is emitted toward the workpiece 10, and the outer end surface 651 is inclined with respect to the central axis 65A of the detection window 65 and faces in the opposite direction to the inner circumference side of the turntable 31. This reduces the area ratio of the outer end surface 651 exposed in the direction from which the flying particles 421 fly in large numbers, making it difficult for the flying particles 421 to come into contact with the outer end surface 651. Therefore, adhesion to the detection window 65 can be suppressed.

[0075] Moreover, the holder 66 that holds the detection window 65 has a surrounding wall 661 that surrounds the outer end surface 651, and the outer end surface 651 is set back from the end of the surrounding wall 661 that faces the installation surface 311. That is, the holder 66 holds the detection window 66 such that the gap between the end of the surrounding wall 611 and the installation surface 311 is narrower than the gap between the outer end surface 651 and the installation surface 311. As a result, even if the incoming particles 421 can reach the vicinity of the detection window 65, they are blocked by the surrounding wall 661 and are difficult to contact with the outer end surface 651. Therefore, adhesion to the detection window 65 can be suppressed.

[0076] In addition, the detection window 65 is positioned on the inner circumference side of the turntable 31. Since the peripheral speed is slow on the inner circumference side of the turntable 31, a sufficient amount of light can be applied to the workpiece 10. Therefore, a good S / N ratio can be achieved, and the accuracy of film thickness detection is improved.

[0077] In this film forming apparatus 100, the detection window 65 is located downstream of the film processing chamber 5 in the transport direction of the work 10, but is not limited to this. That is, depending on the film forming apparatus 100, compound particles may be deposited on the work 10 in the film forming chamber 4. For example, a process gas G2 may also be introduced into the processing space 41, and particles knocked out from the target 42 may react with ions in the process gas G2 to form a compound, which may be deposited on the work 10. In this case, the film processing chamber 5 may be omitted, and the monitoring section 6 is disposed adjacent to the film forming chamber 4. Therefore, the detection window 65 is located downstream of the film forming chamber 4 in the transport direction of the work 10.

[0078] The monitoring unit 60 acquires light reflected from the work 10 through the detection window 65, and detects the film thickness based on the light reflected from the work 10 using the analysis unit 61. However, the optical film thickness detection method is not limited to this. For example, a detection window 65 that transmits light transmitted through the work 10 is installed on the opposite side of the turntable 31, separate from the detection window 65 that emits light from the light projecting unit 62. The work 10 is made of a transparent material, and the turntable 31 and the tray 34 are also made of a translucent material. The spectroscopic unit 63 and the analysis unit 61 are installed in an optical system including the detection window 65 that transmits light transmitted through the work 10. The analysis unit 61 may detect the film thickness from the spectral transmittance characteristics based on the spectrum of the transmitted light.

[0079] (Other embodiments) The present invention is not limited to the above-described embodiment, but also includes other embodiments described below. The present invention also includes a combination of all or any of the above-described embodiment and the other embodiments described below. Furthermore, these embodiments can be omitted, replaced, or modified in various ways without departing from the scope of the invention, and such modifications are also included in the present invention.

[0080] The film formation chamber 4, the film treatment chamber 5, and the monitoring section 6 may be located at the bottom side of the chamber 20, and the vertical relationship between the film formation chamber 4, the film treatment chamber 5, the monitoring section 6 and the turntable 31 may be reversed. In this case, the installation surface 311 of the turntable 31 is the surface that faces downward when the turntable 31 is horizontal, that is, the lower surface. The installation surface of the film formation apparatus 100 may be the floor surface, the ceiling, or the side wall surface. In addition, the arrangement of the turntable 31 is not limited to horizontal, and may be vertical or inclined. In addition, the installation surface 311 of the turntable 31 may be provided on both opposite sides.

[0081] In other words, the direction of the rotation plane of the turntable 31 may be any direction, and the positions of the tray 34, the film forming section 40, the film processing section 50, and the detection window 65 may be such that the workpiece 10 held on the tray 34 can be processed by the film forming section 40 and the film processing section 50, and light can be irradiated by the detection window 65.

[0082] In the film forming apparatus 100, the film is oxidized, nitrided, or the like by the film processing section 50, and the film becomes a compound film, which increases the light transmittance of the film and enables film thickness detection. In the film forming apparatus 100, a process gas can be introduced into the film forming chamber 4 to oxidize or nitride the sputtered particles while forming a film on the workpiece 10. In this case, a compound film with high light transmittance is formed in the film forming chamber 4, and the film processing section 50 is removed, and a monitoring section 6 is provided downstream in the transport direction of the film forming chamber 4. That is, in this embodiment, as long as film thickness detection can be performed on a compound film that has been oxidized, nitrided, or the like, the configuration is not limited to providing the monitoring section 6 downstream in the transport direction of the film processing chamber 5.

[0083] In the above embodiment, the monitoring unit 60 judges whether to continue or end the film formation based on the film thickness detected, and controls each element of the film formation apparatus based on the judgment result, but such feedback control does not have to be performed for the film formation process of all the workpieces 10. For example, when the workpieces 10 are carried into the chamber 20 multiple times to perform the same film formation process, feedback control may be performed for the workpieces 10 carried in the first time, and for the workpieces 10 carried in the second time and thereafter, it may be judged whether to continue or end the film formation based on the film formation time taken for the first time, and each element of the film formation apparatus may be controlled. That is, in this embodiment, it is sufficient to detect the film thickness formed on the workpieces 10 carried into the chamber 20 at any time, and it is not limited to the configuration of detecting the film thickness of all the workpieces 10. [Explanation of symbols]

[0084] 10 Work 20 Chamber 20a Ceiling 20b Inner bottom surface 20c Inner surface 21 Exhaust port 22 Partition Wall 30 Conveyor 31 Rotating Table 311 Installation surface 32 Motor 33 Holding part 34 Tray 4 Film forming chamber 40 Film forming section 41 Processing Space 42 Target 421 Flying Particles 43 Backing Plate 44 electrode 46 Power supply section 47 Gas inlet 48 Piping 49 Sputtering gas inlet 5. Membrane treatment chamber 50 Membrane processing section 51 Cylindrical body 52 Detection window material 53 Antenna 54 RF power supply 55 Matching Box 56 Gas inlet 57 Piping 58 Process gas inlet 59 Processing Space 6 Surveillance Area 60 Monitoring Department 61 Analysis Department 62 Light projector 63 Spectroscopic section 64 Transmission Unit 65 Detection window 651 Outer end face 652 Inner end face 65A center axis 66 Holder 661 Siege Wall 67 Case 68 Plate-shaped part 681 Opposite Surface 70 Load lock section 80 Control device 90 Exhaust section 100 Film deposition equipment G1 Sputtering Gas G2 Process Gas

Claims

1. a conveying unit having a rotating table that rotates by placing a workpiece on a placement surface, and conveying the workpiece in a circumferential conveying path by rotating the rotating table; a film-forming chamber facing the transport path for forming a film on the workpiece; a film forming section disposed in the film forming chamber, the film forming section having a target as a material source for the film and a plasma generator for generating plasma from a sputtering gas introduced between the target and the rotary table, the film forming section sputtering the target with the plasma to form a film on the workpiece; A monitoring unit for monitoring a thickness of the film on the workpiece; Equipped with The monitoring unit is a detection window disposed outside the film formation chamber and facing the transport path, through which light for detecting a film thickness passes; a light projection unit that irradiates light onto the workpiece on which the film is formed through the detection window; an analysis unit that detects a thickness of the film based on light irradiated onto the workpiece and the film; a plate-like portion that is disposed outside the film formation chamber between the film formation chamber and the detection window, facing the installation surface of the turntable and extending along the installation surface; having A film forming apparatus characterized by the above.

2. the plate-shaped portion extends along the installation surface with a length equal to or greater than the mean free path of molecules of a material constituting the target; 2. The film forming apparatus according to claim 1,

3. the plate-like portion has an opposing surface facing the installation surface of the turntable and having a surface roughness of 4 μm or more and 14 μm or less in arithmetic mean roughness Ra; 3. The film forming apparatus according to claim 1 or 2,

4. the plate-shaped portion is disposed around the detection window; 4. The film forming apparatus according to claim 1, wherein:

5. The plate-shaped portion is installed at a distance that allows the work on the rotary table to pass through; 5. The film forming apparatus according to claim 1, wherein:

6. the detection window has an end surface facing the installation surface of the rotary table and through which light from the light projecting unit is emitted toward the workpiece, the end surface is inclined with respect to a central axis of the detection window and faces in a direction opposite to an inner periphery of the rotary table; 6. The film forming apparatus according to claim 1, wherein:

7. a holder for holding the detection window, the detection window has an end surface facing the installation surface of the rotary table and through which light from the light projecting unit is emitted toward the workpiece, The holder has a surrounding wall surrounding the end surface, a gap between an end of the surrounding wall and the installation surface is narrower than a gap between the end surface and the installation surface; 6. The film forming apparatus according to claim 1, wherein:

8. the detection window is located on the inner periphery side of the rotary table; 8. The film forming apparatus according to claim 1, wherein:

9. a film treatment chamber located downstream of the film formation chamber in a direction in which the workpiece is transported, facing the transport path, and in which the film formed in the film formation section is chemically reacted; a film processing section disposed in the film processing chamber, the film processing section having a process gas inlet section for introducing a process gas and a plasma generator for generating plasma from the process gas, and for chemically reacting the film; Further comprising: The detection window is located downstream of the film treatment chamber in a conveying direction of the workpiece; 9. The film forming apparatus according to claim 1, wherein:

10. The detection window further transmits light reflected from the workpiece, The analysis unit detects a film thickness based on light reflected from the workpiece; 10. The film forming apparatus according to claim 1, wherein:

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