Layered aerosol deposited coating for aluminum component for plasma processing chamber

Abstract

To provide a plasma chamber component for use in the manufacture of a semiconductor device.SOLUTION: In a device adapted for use in a plasma processing chamber, a component body 204, which is an aluminum body having at least one side, has an aluminum oxide-containing aerosol-deposited coating 208 disposed on at least one side of a component body 204, and an yttrium-containing aerosol-deposited coating 212 deposited on the aluminum oxide-containing aerosol-deposited coating 208. The yttrium-containing aerosol-deposited coating includes yttria (Y2O3).SELECTED DRAWING: Figure 2C

Description

[Background technology]

[0001] [CROSS REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of priority to U.S. Application No. 62 / 814,022, filed March 5, 2019, which is incorporated by reference herein for all purposes.

[0002] The present disclosure relates generally to the manufacture of semiconductor devices, and more particularly to plasma chamber components used in the manufacture of semiconductor devices.

[0003] During semiconductor wafer processing, plasma processing chambers are used to process semiconductor devices. Aluminum components of the plasma processing chamber are exposed to plasma, which can degrade the components. Summary of the Invention

[0004] To achieve the foregoing in accordance with the objectives of the present disclosure, an apparatus adapted for use in a plasma processing chamber is provided, an aluminum body having at least one surface is provided, an aluminum oxide-containing aerosol-deposited coating is deposited on the at least one surface of the aluminum body, and an yttrium-containing aerosol-deposited coating is deposited on the aluminum oxide-containing aerosol-deposited coating.

[0005] In another embodiment, a method for coating a plasma processing chamber component is provided. An aluminum oxide-containing coating is aerosol deposited onto at least one surface of the plasma processing chamber component. A yttrium-containing coating is aerosol deposited onto the aluminum oxide-containing coating.

[0006] These and other features of the present disclosure are described in more detail below in the detailed description of the present disclosure taken in conjunction with the following figures. [Brief description of the drawings]

[0007] The present disclosure is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings in which like reference numerals refer to similar elements and in which:

[0008] [Figure 1] 1 is a high level flow chart of an embodiment.

[0009] [Figure 2A] 1 is a schematic diagram of a component processed according to an embodiment; [Figure 2B] 1 is a schematic diagram of a component processed according to an embodiment; [Figure 2C] 1 is a schematic diagram of a component processed according to an embodiment;

[0010] [Diagram 3] 1 is a schematic diagram of a plasma processing chamber that may be used in embodiments. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0011] The present disclosure will now be described in detail with reference to several preferred embodiments thereof, as illustrated in the accompanying drawings. In the following description, several specific details are set forth in order to provide a thorough understanding of the present disclosure. However, it will be apparent to one skilled in the art that the present disclosure may be practiced without some or all of these specific details. In other instances, well-known process steps and / or configurations have not been described in detail in order not to unnecessarily obscure the present disclosure.

[0012] Coated components are used in plasma processing chambers. Bare aluminum is a common material for providing coated components because bare aluminum is easily abraded. To protect the bare aluminum from the plasma, the bare aluminum must be sufficiently coated.

[0013] For ease of understanding, Figure 1 is a high level flow chart of a process used in an embodiment. A component body is provided (step 104). Figure 2A is a schematic cross-sectional view of a component body 204. The component body 204 is an aluminum body. In this example, the aluminum body is at least 95% pure aluminum by weight. For example, the aluminum body is made of Al6061. Typically, the aluminum body is either pure aluminum or an aluminum alloy. Typically, the aluminum alloy is at least 95% pure aluminum by weight.

[0014] After the component body 204 is provided, at least one surface of the component body 204 is polished (step 108). In this example, the top surface of the component body 204 is polished. Because the component body 204 is at least 95% pure aluminum, the surface is soft enough to be polished. The polishing provides a surface roughness of less than 16 Ra (microinches) (0.0004064 millimeters). In other embodiments, the polishing provides a surface roughness of less than 10 Ra (0.000254 millimeters). In other embodiments, the polishing provides a surface roughness of less than 5 Ra (0.000127 millimeters).

[0015] After the component 204 is polished (step 108), an aluminum oxide (Al2O3) aerosol deposition coating is deposited on at least one polished surface of the component body 204 (step 112). Aerosol deposition is achieved by flowing a carrier gas through a fluidized bed of solid ceramic particles. Driven by a pressure differential, the solid ceramic particles are accelerated through a nozzle and form an aerosol jet at its exit. The aerosol jet is then directed at at least one polished surface of the component body 204 and impacts the surface at high velocity. The solid particles break into solid nano-sized pieces and form a coating. Optimization of the carrier gas species, gas consumption, standoff distance, and scanning speed provides a high quality coating. FIG. 2B is a schematic cross-sectional view of a portion of the component body 204 after an aluminum oxide aerosol deposition coating 208 has been deposited on at least one polished surface of the component body 204.

[0016] After the aluminum oxide aerosol-deposited coating is deposited (step 112), a yttrium-containing aerosol-deposited coating is deposited (step 116) on the aluminum oxide aerosol-deposited coating 208. In this example, the yttrium-containing aerosol-deposited coating includes yttria (YO). In other embodiments, the yttrium-containing aerosol-deposited coating includes at least one of yttrium oxyfluoride (YOF), yttrium aluminum oxide, yttria-stabilized zirconia (YSZ), and yttrium (III) fluoride (YF). Yttrium aluminum oxide is commonly known as yttrium aluminum garnet (YAlO 12 (YAG), monoclinic yttrium aluminum (YAlO (YAM)), and yttrium aluminum perovskite (YAlO (YAP)). Figure 2C is a simplified cross-sectional view of a portion of the component body 204 after a yttrium-containing aerosol-deposited coating 212 has been deposited on the aluminum oxide aerosol-deposited coating 208.

[0017] After the yttrium-containing aerosol-deposited coating 212 is deposited (step 116), the formation of the protective coating is complete and the component body 204 is mounted in a plasma processing chamber (step 120). The plasma processing chamber is used to process a substrate (step 124), and a plasma is generated in the chamber to process the substrate, such as to etch the substrate. The yttrium-containing aerosol-deposited coating 212 is exposed to the plasma.

[0018] Various embodiments of coating the component body 204 provide a more etch resistant coating. Aerosol deposition processes that rely on energetic collisions of sub-micron solid ceramic powders with a substrate result in coatings with a bulk ceramic density greater than 95% by weight. Aerosol deposition processes typically provide multiple passes, with a first pass used to fix the coating to the substrate for adhesion. Subsequent passes are used to deposit a thickness of the coating.

[0019] Thermally sprayed yttria has a relatively high porosity. Without wishing to be bound by theory, it is believed that aerosol deposition of yttria provides a coating with much less porosity than thermally sprayed yttria. The density of the aerosol deposited coating depends on the hardness of the substrate. If aerosol deposition of yttria is deposited directly on aluminum, it is believed that the first coating can penetrate the surface of the soft aluminum component body 204 to obtain the desired adhesion. However, in subsequent coating passes, the fracture and impact of the yttria aerosol deposited powder may not be effective due to the low hardness of the yttria anchor layer and the soft aluminum component body 204. The soft aluminum body reduces the impact energy.

[0020] In the above embodiment, an aluminum oxide aerosol deposited coating 208 is deposited on an aluminum component body 204. The aluminum oxide aerosol deposited coating 208 forms an anchor layer that is harder than an yttria aerosol deposited coating. Aluminum oxide has a Vickers hardness of 2085. Yttria has a Vickers hardness of 700. Due to the high hardness of aluminum oxide, the aluminum oxide aerosol deposited coating 208 penetrates deep into the surface of the component body 204 and forms a highly connected interface with stronger bonds. The anchor layer also provides a strong foundation for the subsequent yttria aerosol deposition and provides more efficient fracturing and plastic deformation. The aluminum oxide aerosol deposited coating 208 has better chemical resistance than the yttrium-containing aerosol coating 212. More specifically, the improved chemical resistance provides a better diffusion barrier to wet chemicals. The better diffusion barrier in turn provides improved part life when the component body 204 is exposed to wet cleaning processes.

[0021] Subsequent yttria aerosol deposition results in a denser yttrium-containing aerosol-deposited coating 212 than if the yttrium-containing aerosol deposition were deposited on bare aluminum.

[0022] In various embodiments, the yttrium-containing aerosol-deposited coating 212 has a thickness between 1 and 20 microns. In other embodiments, the yttrium-containing aerosol-deposited coating 212 has a thickness between 1 and 10 microns. In various embodiments, the aluminum oxide aerosol-deposited coating 208 has a thickness between 1 and 20 microns. In other embodiments, the aluminum oxide aerosol-deposited coating 208 has a thickness between 1 and 10 microns. In general, an aluminum oxide aerosol-deposited coating is an aluminum oxide-containing aerosol-deposited coating. However, the aluminum oxide-containing aerosol-deposited coating may further include other materials or impurities.

[0023] FIG. 3 is a schematic representation of an example of a plasma processing chamber 300. The plasma processing chamber 300 may be used in an embodiment. The plasma processing chamber 300 includes a plasma reactor 302 having a plasma processing confinement chamber 304 therein. A plasma power supply 306 tuned by a matching network 308 provides inductively coupled power to a transformer coupled plasma (TCP) coil 310 located near a power window 312 to generate a plasma 314 in the plasma processing confinement chamber 304. A pinnacle 372 ("PINNACLE" is a registered trademark) extends from a chamber wall 376 of the plasma processing confinement chamber 304 to the power window 312 to form a pinnacle ring. The pinnacle 372 is angled with respect to the chamber wall 376 and the power window 312 such that the interior angles between the pinnacle 372 and the chamber wall 376 and between the pinnacle 372 and the power window 312 are greater than 90° and less than 180°, respectively. As shown, the pinnacle 372 provides an angled ring near the top of the plasma processing confinement chamber 304. The TCP coil (top power) 310 may be configured to form a uniform diffusion profile in the plasma processing confinement chamber 304. For example, the TCP coil 310 may be configured to generate a toroidal power distribution in the plasma 314. A power window 312 is provided to isolate the TCP coil 310 from the plasma processing confinement chamber 304 while allowing energy to flow from the TCP coil 310 to the plasma processing confinement chamber 304. A wafer bias voltage power supply 316, regulated by a matching network 318, provides power to an electrode 320 to set a bias voltage on a substrate 366. The substrate 366 is supported on the electrode 320. A controller 324 sets the points for the plasma power supply 306 and the wafer bias voltage power supply 316.

[0024] The plasma power source 306 and the wafer bias voltage power source 316 may be configured to operate at a particular radio frequency (e.g., 13.56 megahertz (MHz), 27 MHz, 2 MHz, 60 MHz, 400 kilohertz (kHz), 2.54 gigahertz (GHz), or a combination thereof). The plasma power source 306 and the wafer bias voltage power source 316 may be appropriately sized to provide a range of power to achieve the desired process performance. For example, in one embodiment, the plasma power source 306 may provide a power of 50-5000 watts, and the wafer bias voltage power source 316 may provide a bias voltage of 20-2000 volts (V). Additionally, the TCP coil 310 and / or the electrode 320 may be comprised of two or more sub-coils or sub-electrodes. The sub-coils or sub-electrodes may be powered by a single power source or multiple power sources.

[0025] As shown in FIG. 3, the plasma processing chamber 300 further comprises a gas source / gas supply mechanism 330. The gas source 330 is in fluid communication with the plasma processing confinement chamber 304 through a gas inlet, such as a gas injector 340. The gas injector 340 may be located in any convenient location within the plasma processing confinement chamber 304 and may take any form for injecting gas. However, the gas inlet may be preferably configured to create a “tunable” gas injection profile. The adjustable gas injection profile allows for independent adjustment of the respective gas flows to multiple zones of the plasma processing confinement chamber 304. More preferably, the gas injector is mounted in the power window 312. Mounting the gas injector in the power window 312 means that the gas injector may be mounted on, within, or form part of the power window. The gas source / gas supply mechanism 330 is controlled by a controller 324. A pressure control valve 342 and a pump 344 are in fluid communication with the plasma processing confinement chamber 304. Process gases and by-products are removed from the plasma processing confinement chamber 304 by a pressure control valve 342 and a pump 344. The gas pressure control valve 342 and pump 344 also function to maintain a particular pressure inside the plasma processing confinement chamber 304. The pressure control valve 342 can maintain a pressure of less than 1 Torr during processing. An edge ring 360 is disposed around the periphery of the substrate 366. A Kiyo by Lam Research Corporation of Fremont, Calif. may be used to implement the embodiment.

[0026] In various embodiments, the component may be a different part of the plasma processing confinement chamber 304, such as a confinement ring, edge ring 360, pinnacle 372, electrostatic chuck, electrode 320, ground ring, chamber liner, door liner, or other component. Other components of other types of plasma processing chambers may be used. For example, the plasma exclusion ring of a bevel etch chamber may be coated in an embodiment. In another example, the plasma processing chamber may be a dielectric processing chamber or a conductive processing chamber. In some embodiments, one or more surfaces, but not all surfaces, are coated.

[0027] While the present disclosure has been described in terms of several preferred embodiments, there are changes, permutations, modifications, and various substitute equivalents that fall within the scope of the present disclosure. It should also be noted that there are many alternative ways of implementing the methods and apparatuses of the present disclosure. It is therefore intended that the following appended claims be interpreted to include all such changes, permutations, and various substitute equivalents that fall within the true spirit and scope of the present disclosure.

Claims

1. 1. An apparatus adapted for use in a plasma processing chamber, comprising: an aluminum body having at least one surface; an aluminum oxide-containing aerosol-deposited coating deposited on the at least one surface of the aluminum body; an yttrium-containing aerosol-deposited coating deposited on the aluminum oxide-containing aerosol-deposited coating; An apparatus comprising:

2. 2. The apparatus of claim 1, The yttrium-containing aerosol deposited coating comprises yttria.

3. 2. The apparatus of claim 1, The yttrium-containing aerosol deposited coating has a thickness in the range of 1 to 20 microns.

4. 4. The apparatus of claim 3, The aluminum oxide-containing aerosol-deposited coating has a thickness in the range of 1 to 20 microns.

5. 2. The apparatus of claim 1, The apparatus, wherein the yttrium-containing aerosol-deposited coating comprises one or more of yttria, yttrium oxyfluoride, yttrium aluminum oxide, yttria stabilized zirconia, and yttrium (III) fluoride.

6. 2. The apparatus of claim 1, The apparatus is at least one of a confinement ring, an edge ring, a pinnacle, an electrostatic chuck, an electrode, a ground ring, a chamber liner, and a door liner.

7. 2. The apparatus of claim 1, The apparatus, wherein the at least one surface of the aluminum body has a surface roughness of less than 16 Ra (microinches) (0.0004064 millimeters).

8. 2. The apparatus of claim 1, The apparatus, wherein the aluminum body is at least 95% by weight pure aluminum.

9. 2. The apparatus of claim 1, The apparatus, wherein the aluminum oxide-containing aerosol deposited coating is an aluminum oxide aerosol deposited coating.

10. 2. The apparatus of claim 1, The aluminum oxide-containing aerosol-deposited coating acts as an anchor layer to provide adhesion for the yttrium-containing aerosol-deposited coating.

11. 2. The apparatus of claim 1, A device, wherein the aluminum oxide-containing aerosol-deposited coating acts as a diffusion barrier to protect against wet chemicals.

12. 1. A method for coating a plasma processing chamber component body, comprising: aerosol depositing an aluminum oxide-containing coating on at least one surface of the plasma processing chamber component body; aerosol depositing a yttrium-containing coating onto the aluminum oxide-containing coating; A method comprising:

13. 13. The method of claim 12 further comprising: polishing the at least one surface of the plasma processing chamber component body prior to aerosol depositing the aluminum oxide-containing coating.

14. 13. The method of claim 12, The method, wherein the yttrium-containing coating comprises yttria.

15. 13. The method of claim 12, The yttrium-containing coating has a thickness in the range of 1 to 20 microns.

16. 16. The method of claim 15, The aluminum oxide-containing coating has a thickness in the range of 1 to 20 microns.

17. 13. The method of claim 12, The method, wherein the yttrium-containing coating comprises one or more of yttria, yttrium oxyfluoride, yttrium aluminum oxide, yttria stabilized zirconia, and yttrium (III) fluoride.

18. 13. The method of claim 12, The method, wherein the plasma processing chamber component body is at least one of a confinement ring, an edge ring, a pinnacle, an electrostatic chuck, an electrode, a ground ring, a chamber liner, and a door liner.

19. 13. The method of claim 12 further comprising: prior to aerosol depositing the aluminum oxide-containing coating, polishing the at least one surface of the plasma processing chamber component body to have a surface roughness of less than 16 Ra (microinches).

20. 13. The method of claim 12, The method of claim 1, wherein the plasma processing chamber component body is at least 95% by weight pure aluminum.

21. 13. The method of claim 12, The method, wherein said step of aerosol depositing an aluminum oxide-containing coating deposits an aluminum oxide coating.

22. 13. The method of claim 12, The method, wherein the aluminum oxide-containing coating acts as an anchor layer to provide adhesion for the yttrium-containing aerosol-deposited coating.

23. 13. The method of claim 12, The method, wherein the aluminum oxide-containing coating acts as a diffusion barrier to protect against wet chemicals.

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