Substrate processing method and substrate processing apparatus
JP2025027792APending Publication Date: 2025-02-28TOKYO ELECTRON LTD
Patent Information
- Application Number
- JP2023132928
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-08-17
- Publication Date
- 2025-02-28
AI Technical Summary
Benefits of technology
【0008】 一の側面によれば、基板表面の状態を制御することで、基板の周縁部の炭素含有膜を選択的に除去することができる。
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Abstract
To control the state of a substrate surface to selectively remove a carbon-containing film from the peripheral portion of a substrate.SOLUTION: A substrate processing method includes the steps of preparing a substrate having an undercoat film, hydrophobizing a surface of the substrate, selectively hydrophilizing a peripheral portion of the substrate, setting a processing pressure to a first pressure and forming a carbon-containing film having a film stress of 1 GPa or more on the substrate, and setting the processing pressure to a second pressure higher than the first pressure and selectively removing the carbon-containing film from the hydrophilized peripheral portion of the substrate.SELECTED DRAWING: Figure 4
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Citation Information
Patent Citations
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