Power semiconductor element and power converter

Abstract

To provide a power semiconductor element and a power converter, for a high-voltage and a high-power operation.SOLUTION: A power semiconductor element 200B contains: a substrate 212; a drift layer 213 that is formed onto a substrate including an active region 206 having a region to be doped and a terminal end region 207 constructed so as to surround the active region; and a bonding terminal end part (JTE) 220 in the terminal end region. The substrate and the drift layer contain a first conductive type, and the region to be doped and the bonding terminal end part contain a second conductive type. The bonding terminal end part contains at least one cut-off region 221 adjacent to an edge of the active region and a plurality of separation regions 222-1 to 222-n. Each separation region of the plurality of separation regions contains: two or more sub regions 222-1a, 222-1b to 222-na, and 222-nb. The two or more sub regions include a different dopant concentration, each other.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] The embodiments relate to a power semiconductor device and a power converter. [Background technology]

[0002] Unlike system semiconductors and memory that process and store information and signals, power semiconductors are widely used in most electronic products to convert, store, distribute and control the power applied to electronic devices.

[0003] Recently, in line with the global trend of strengthening environmental protection, electric and hydrogen-based eco-cars are gaining attention as an alternative to existing fossil fuel-based cars. Many power semiconductor elements are used in such eco-cars. Here, eco-cars include hybrid electric vehicles (HEVs), plug-in hybrid electric vehicles (PHEVs), electric vehicles (EVs), fuel cell electric vehicles (PCEVs), etc.

[0004] Conventionally, silicon power semiconductor elements have been widely used, but due to their low power, low dielectric breakdown characteristics, low thermal conductivity, etc., the development of new power semiconductors is required.

[0005] As a result, active research is being conducted into compound semiconductor-based power semiconductors, which have an energy band gap three times larger than that of conventional Si power semiconductors. These compound semiconductor-based power semiconductors have high power, high dielectric breakdown characteristics, high thermal conductivity, etc.

[0006] Recently, power semiconductors are being adopted for ultra-high voltage power transmission equipment, electric vehicles, etc., and therefore a high breakdown voltage is being required. For example, a breakdown voltage of 1,200 V or more is required.

[0007] For this reason, research into the design and layout of power semiconductor devices has been actively conducted, but a power semiconductor device having a satisfactory breakdown voltage has not yet been disclosed. Summary of the Invention [Problem to be solved by the invention]

[0008] SUMMARY OF THE DISCLOSURE The illustrative embodiments are directed to solving the above-referenced problems and other problems.

[0009] Another object of the embodiments is to provide a power semiconductor device and a power converter having a new structure.

[0010] Yet another object of the embodiments is to provide a power semiconductor device and a power converter that can withstand a high breakdown voltage.

[0011] Still another object of the embodiments is to provide a power semiconductor device and a power converter that can be designed in an optimized space without restrictions of design rules.

[0012] The technical problems of the embodiments are not limited to those described in this section, but include those that can be understood from the description of the invention. [Means for solving the problem]

[0013] According to a first aspect of an embodiment to achieve the above or another object, a power semiconductor device includes a substrate, a drift layer formed in the substrate including an active region having a doped region and a termination region surrounding the active region, and a junction termination in the termination region, wherein the substrate and the drift layer have a first conductivity type, the doped region and the junction termination have a second conductivity type, and the junction termination includes at least one blocking region adjacent to the active region and a plurality of isolation regions, each of the plurality of isolation regions includes two or more sub-regions, and the two or more sub-regions have different dopant concentrations from each other.

[0014] Each of the plurality of isolation regions may include a first sub-region having a first dopant concentration and a second sub-region having a second dopant concentration, the first dopant concentration being greater than the second dopant concentration.

[0015] The first sub-region may be located closer to an edge of the active area than the second sub-region.

[0016] The multiple separation regions may include a first separation region adjacent to the at least one blocking region and a second separation region adjacent to the first separation region, and a distance between the separation region and the at least one blocking region may be less than a distance between the first separation region and the second separation region.

[0017] The distance between adjacent separation regions may be correlated with the distance between the interior separation regions of the adjacent separation regions and the at least one blocking region.

[0018] The first sub-region and the second sub-region may have different depths.

[0019] An upper side of the first sub-region and an upper side of the second sub-region may be positioned on a horizontal line, and a lower side of the second sub-region may be positioned lower than a lower side of the first sub-region.

[0020] Each of the plurality of separation regions may include an overlapping region that includes a portion of the first sub-region and a portion of the second sub-region.

[0021] A lower side of the second sub-region may be located below the overlapping region.

[0022] The first dopant concentration of the first sub-region or the second dopant concentration of the second sub-region may be the same as a dopant concentration of the doped region.

[0023] According to a second aspect of the embodiment to achieve the above or another object, a power semiconductor device includes a substrate, a drift layer on the substrate including an active region having a doped region and a termination region surrounding the active region, the termination region including at least one blocking region and a plurality of isolation regions, the at least one blocking region contacting a side of the at least one doped region arranged at an edge of the active region, the plurality of isolation regions being arranged along a lateral direction of the at least one blocking region, and each of the plurality of isolation regions including a first sub-region having a first dopant concentration and a second sub-region having a second dopant concentration that is less than the first dopant concentration of the first sub-region.

[0024] The plurality of separation intervals may be composed of a first separation interval and remaining separation intervals, the first separation interval being smaller than each of the remaining separation intervals, the first separation interval being between a first sub-region of a first separation region that is closest to the at least one blocking region among the plurality of separation regions and the at least one blocking region, and the remaining separation intervals being between a plurality of first sub-regions of the plurality of separation regions.

[0025] The first spacing and the remaining spacing may be greater as the distance from the outermost body increases.

[0026] The first sub-region and the second sub-region may have different depths.

[0027] An upper side of the first sub-region and an upper side of the second sub-region may be positioned on a horizontal line, and a lower side of the second sub-region may be positioned lower than a lower side of the first sub-region.

[0028] Each of the plurality of separation regions may include an overlapping region that includes a portion of the first sub-region and a portion of the second sub-region.

[0029] A lower side of the second sub-region may be located below the overlapping region.

[0030] The first dopant concentration of the first sub-region or the second dopant concentration of the second sub-region may be the same as a dopant concentration of the doped region.

[0031] The at least one blocking region and the plurality of separation regions may have a ring shape.

[0032] According to a third aspect of an embodiment to achieve the above or another object, a power converter includes a plurality of power semiconductor modules, each of the plurality of power semiconductor elements includes a substrate, a drift layer formed in the substrate including an active region having a doped region and a termination region surrounding the active region, and a junction termination (JTE) in the termination region, the substrate and the drift layer include a first conductivity type, the doped region and the junction termination (JTE) include a second conductivity type, the junction termination includes the at least one blocking region and a plurality of isolation regions located farthest from an outermost body than the at least one blocking region, each of the plurality of isolation regions includes two or more isolation sub-regions, and the two or more isolation sub-regions are configured to have different doping concentrations from each other. Effect of the Invention

[0033] The effects of the power semiconductor device and the power converter according to the embodiment will be described below.

[0034] 7 and 8, the power semiconductor device according to the embodiment may include a termination region 207 disposed on a side of a body 214-1, 214-2 (hereinafter, referred to as an outermost body 214-3) located at the outermost periphery of an active region 206. The termination region 207 may include a blocking region 221 in contact with the outermost body 214-3 and a plurality of separation regions 222-1 to 222-n disposed along a lateral direction of the blocking region 221.

[0035] Each of the plurality of separation regions 222-1 to 222-n may include two or more sub-regions. For example, the first sub-regions 222-1a to 222na of each of the plurality of separation regions 222-1 to 222-n may be located closer to the outermost body 214-3 than the second sub-regions 222-1b to 222-nb.

[0036] The first sub-regions 222-1a to 222na can minimize the separation distances d21 to d23 to design an optimized space without the limitations of design rules. The second sub-regions 222-1b to 222-nb can appropriately distribute the electric field. As a result, according to the embodiment, the first sub-regions 222-1a to 222na can design an optimized space without the limitations of design rules, and the second sub-regions 222-1b to 222-nb can achieve a desired breakdown voltage.

[0037] For example, the first sub-regions 222-1a to 222na of the first isolation regions 222-1 to 222-n adjacent to the outermost body 214-3 are formed at a first separation distance d21 of 1 μm or less from the outermost body 214-3. Furthermore, the first sub-regions 222-1a to 222na of the multiple isolation regions 222-1 to 222-n are formed so that the remaining separation distances d22, d23 are also set very narrow. Therefore, an optimized space can be designed without the limitations of design rules.

[0038] For example, the multiple isolation regions 222-1 to 222-n include second sub-regions 222-1b to 222-nb each including a second dopant concentration that is lower than the first dopant concentration of the first sub-regions 222-1a to 222na, so that even a very large electric field can be properly dispersed by the second sub-regions 222-1b to 222-nb of each of the multiple isolation regions 222-1 to 222-n, thereby ensuring an increased breakdown voltage.

[0039] Further scope of applicability of the embodiments will become apparent from the following detailed description. However, it should be understood that the detailed description and specific embodiments, such as the preferred embodiments, are merely illustrative, since various changes and modifications within the spirit and scope of the embodiments will be apparent to those skilled in the art. [Brief description of the drawings]

[0040] [Figure 1] FIG. 1 is a circuit diagram illustrating an inverter according to an embodiment. [Diagram 2] FIG. 2 is a plan view illustrating the power semiconductor element according to the embodiment. [Diagram 3] FIG. 3 is an enlarged plan view illustrating a region X in FIG. [Figure 4] FIG. 4 is a cross-sectional view of region X shown in FIG. 3 taken along line CC'. [Diagram 5] FIG. 5 is a cross-sectional view of region X shown in FIG. 3 taken along line DD'. [Figure 6] FIG. 6 is a cross-sectional view illustrating a power semiconductor device according to the first embodiment. [Figure 7] FIG. 7 is a cross-sectional view illustrating a power semiconductor device according to the second embodiment. [Figure 8] FIG. 8 is an enlarged cross-sectional view illustrating a junction termination portion in the power semiconductor device according to the second embodiment shown in FIG. [Figure 9] FIG. 9 is a graph illustrating breakdown voltage as a function of dopant concentration in an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0041] Hereinafter, the embodiments disclosed herein will be described in detail with reference to the accompanying drawings. The same or similar components will be given the same reference numerals regardless of the drawing numbers, and the repeated description thereof will be omitted. The suffixes "module" and "section" for components used in the following description are given or mixed to facilitate the preparation of the specification, and do not have a different meaning or role by themselves. In addition, the accompanying drawings are provided to facilitate the understanding of the embodiments disclosed herein, and the technical ideas disclosed herein are not limited by the accompanying drawings. In addition, when an element such as a layer, region, or substrate 212 is referred to as being "on" another element, this includes that it is directly on the other element or that other intermediate elements may be present therebetween.

[0042] In some embodiments, the power converter may be used as an inverter or converter in computers, home appliances, automobiles, solar panels, smart grids, etc. In some embodiments, the power converter may include one or more power semiconductor modules. In some embodiments, the power semiconductor module may include multiple power semiconductor elements.

[0043] In the following embodiments (FIGS. 1 and 11), an inverter for driving a vehicle motor is described as a power converter, but the power converter of the embodiments can be applied to inverters, converters, etc. in the various technical fields mentioned above. Here, automobiles refer to eco-cars, and include electric vehicles (EVs), hybrid vehicles (HEVs), plug-in hybrid vehicles (PHEVs), fuel cell electric vehicles (PCEVs), etc.

[0044] In the following examples, the terms withstand voltage and breakdown voltage may be used interchangeably.

[0045] In the following embodiments, a switching element and a power semiconductor element may be used interchangeably, and a leg and a power semiconductor module may be used interchangeably.

[0046] FIG. 1 is a circuit diagram illustrating an inverter according to a first embodiment.

[0047] Referring to FIG. 1, an inverter 1000 according to a first embodiment can convert DC power into AC power and supply the converted AC power to a load 1200 to drive the load 1200. A battery is connected to an input end of the inverter 1000 according to the first embodiment, and DC power of the battery is converted into AC power. Although not shown, a converter is connected to an input end of the battery, and an input end of the converter is connected to a charger of a charging station. In this case, AC power supplied through the charger by the converter is converted into DC power, and the converted DC power is charged into the battery to charge the battery. The DC power charged into the battery is also converted into AC power by the inverter 1000 according to the first embodiment and used to drive the load.

[0048] The circuitry of the converter may be similar or identical to that of the inverter.

[0049] The load 1200 may be a motor, but is not limited thereto.

[0050] The inverter 1000 according to the first embodiment may include a three-phase inverter, but is not limited thereto. For example, the three-phase inverter may output an AC current having a phase difference of 120 degrees between a first phase, a second phase, and a third phase. The inverter 1000 according to the first embodiment may include a plurality of legs 100A, 100B, and 100C. For example, the first leg 100A, the second leg 100B, and the third leg 100C may be connected in parallel to a load 1200, i.e., a motor, via a first node N1, a second node N2, and a third node N3, respectively. The first leg 100A may include a first arm 100a and a second arm 100b connected in series to each other, the second leg 100B may include a third arm 100c and a fourth arm 100d connected in series to each other, and the third leg 100C may include a fifth arm 100e and a sixth arm 100f connected in series to each other. Here, the first arm 100a, the third arm 100c, and the fifth arm 100e can be referred to as upper arms, and the second arm 100b, the fourth arm 100d, and the sixth arm 100f can be referred to as lower arms. Each of the first arm to the sixth arm 100f can be referred to as a switching module, a sub-module, or the like.

[0051] The first arm 100a to the sixth arm 100f may include switching elements 100a-1, 100b-1, 100c-1, 100d-1, 100e-1, and 100f-1 and diodes 100a-2, 100b-2, 100c-2, 100d-2, 100e-2, and 100f-2, respectively. The switching elements 100a-1, 100b-1, 100c-1, 100d-1, 100e-1, and 100f-1 and the diodes 100a-2, 100b-2, 100c-2, 100d-2, 100e-2, and 100f-2 may be formed simultaneously using the same semiconductor process. The switching elements 100a-1, 100b-1, 100c-1, 100d-1, 100e-1, and 100f-1 may include power semiconductor elements.

[0052] In order for DC power to be converted into AC power by the inverter according to the first embodiment, the switching elements 100a-1, 100b-1, 100c-1, 100d-1, 100e-1, and 100f-1 of the first arm 100a to the sixth arm 100f are on / off controlled.

[0053] For example, when the first switching element 100a-1 of the first arm 100a of the first leg 100A is in an ON state, the fourth switching element 100d-1 of the fourth arm 100d of the second leg 100B and / or the sixth switching element 100f-1 of the sixth arm 100f of the third leg 100C can be in an ON state, thereby supplying DC power to the first phase inductor of the motor.

[0054] For example, when the third switching element 100c-1 of the third arm 100c of the second leg 100B is in an ON state, the sixth switching element 100f-1 of the sixth arm 100f of the third leg 100C and / or the second switching element 100b-1 of the second arm 100b of the first leg 100A can be in an ON state. This allows DC power to be supplied to the second phase inductor of the motor. The second phase is delayed by 120 degrees from the first phase.

[0055] For example, when the fifth switching element 100e-1 of the fifth arm 100e of the third leg 100C is in an ON state, the second switching element 100b-1 of the second arm 100b of the first leg 100A and / or the fourth switching element 100d-1 of the fourth arm 100d of the second leg 100B can be in an ON state. This allows DC power to be supplied to the third phase inductor of the motor. The third phase is delayed by 120 degrees from the second phase.

[0056] Thereby, AC power is generated by DC power supplied to each of the first phase inductor, the second phase inductor, and the third phase inductor.

[0057] Meanwhile, although not shown, in order to improve the breakdown voltage characteristics, each of the switching elements of the first arm 100a to the sixth arm 100f, i.e., the power semiconductor elements 100a-1, 100b-1, 100c-1, 100d-1, 100e-1, and 100f-1, may be provided in plurality and connected in series with each other.

[0058] Although not shown, in order to improve current characteristics, each of the switching elements of the first arm 100a to the sixth arm 100f, i.e., the power semiconductor elements 100a-1, 100b-1, 100c-1, 100d-1, 100e-1, and 100f-1, may be provided in plurality and connected in parallel with each other.

[0059] Meanwhile, the switching elements 100a-1, 100b-1, 100c-1, 100d-1, 100e-1, and 100f-1 and the diodes 100a-2, 100b-2, 100c-2, 100d-2, 100e-2, and 100f-2 constituting the first arm 100a to the sixth arm 100f can be packaged to form a power semiconductor module.

[0060] As an example, the first leg 100A, the second leg 100B, and the third leg 100C can each be configured as a power semiconductor module. That is, the first arm 100a and the second arm 100b of the first leg 100A can be packaged and configured as a first power semiconductor module. The third arm 100c and the fourth arm 100d of the second leg 100B can be packaged and configured as a second power semiconductor module. The fifth arm 100e and the sixth arm 100f of the third leg 100C can be packaged and configured as a third power semiconductor module.

[0061] As another example, the first leg 100A, the second leg 100B, and the third leg 100C may be configured as a single power semiconductor module, i.e., the first arm 100a and the second arm 100b of the first leg 100A, the third arm 100c and the fourth arm 100d of the second leg 100B, and the fifth arm 100e and the sixth arm 100f of the third leg 100C may be packaged and configured as a single power semiconductor module.

[0062] Hereinafter, a power semiconductor device will be described with reference to Figures 2 to 9. In the following description, components including the same dose and formed in the same layer may be simultaneously formed by the same ion implantation process using the same mask. Alternatively, components including doped regions having the same dose and formed in the same layer may be formed at different times using different masks.

[0063] The ion implantation process physically implants ions created using a source gas into the substrate 212. Ions can be collectively referred to as impurities. This ion implantation process increases the conductivity of an insulating material or changes it into a semiconductor, forming various regions with different or the same dose.

[0064] The substrate, drift layer, body, contact region, source region, blocking region, isolation region, and two or more sub-regions included in each region are formed by the above-mentioned ion implantation process. Different energies are used for the various regions into which ions are implanted depending on their dopant concentrations and positions. For example, low energy is used to realize a shallow junction, and high energy is used to realize a deep junction, but the present invention is not limited thereto.

[0065] In the following description, terms such as dose, dose amount and dopant concentration may be used interchangeably as having the same meaning.

[0066] FIG. 2 is a plan view illustrating the power semiconductor element according to the embodiment.

[0067] 2, the power semiconductor device according to the embodiment may be divided into an active area 206 and a termination area 207. The power semiconductor device according to the embodiment may include, but is not limited to, a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

[0068] The active region 206 may include a plurality of active cells. Each of the active cells may include a semiconductor element that includes a gate electrode 217, a source electrode 219, and a gate electrode 217 and can perform a predetermined operation. Thus, a plurality of semiconductor elements are formed by the plurality of active cells.

[0069] Since the plurality of active cells are defined in a matrix form, the plurality of semiconductor devices are also arranged in a matrix form.

[0070] The termination region 207 may surround the active area 206. The termination region 207 may be located along the edges of the active area 206. The termination region 207 may distribute the electric field to enable a high breakdown voltage.

[0071] Although the power semiconductor devices according to the embodiments are illustrated in the drawings as having a rectangular shape when viewed from above, the power semiconductor devices may have other shapes.

[0072] A gate pad 201 and a source pad 202 may be located in the active region 206. The gate pad 201 is connected to a gate electrode 217 of each of the active cells via a gate line 208, and a gate signal is supplied to the gate electrode 217. The source pad 202 is connected to a source electrode 219 of the active cell, and a source voltage is supplied to the source electrode 219. Although not shown, a drain pad may be located under the power semiconductor device according to the embodiment. The drain pad is connected to a drain electrode 211 of each of the active cells, and a drain voltage is supplied to the drain electrode 211.

[0073] The gate electrode 217 may be referred to as a gate, a gate poly, a gate contact, etc. The source electrode 219 may be referred to as a source contact, and the gate electrode 217 may be referred to as a gate contact. Although not shown, the source pad 202 may not be distinguished from the source electrode 219 and may be collectively referred to as the source electrode 219, and the drain pad may not be distinguished from the drain electrode 211 and may be collectively referred to as the drain electrode 211.

[0074] Fig. 3 is an enlarged plan view illustrating region X in Fig. 2. Fig. 4 is a cross-sectional view of region X taken along line CC' in Fig. 3. Fig. 5 is a cross-sectional view of region X taken along line DD' in Fig. 3.

[0075] As shown in FIG. 3, six semiconductor elements are shown in the X region.

[0076] An active cell may include, but is not limited to, one semiconductor device, for example, an active cell may include two or more semiconductor devices.

[0077] The power semiconductor device according to the embodiment may include a drain electrode 211, a substrate 212, a drift layer 213, a body 214-1, 214-2, a source region 215 (i.e., source regions 215-1, 215-2), a contact region 216 (i.e., contact regions 216-1, 216-2), a gate electrode 217, an insulating layer 218, and a source electrode 219. A semiconductor device including an active cell may include a substrate 212, a drift layer 213, a body 214-1, 214-2, a source region 215-1, 215-2, a contact region 216-1, 216-2, a gate electrode 217, an insulating layer 218, and a source electrode 219. The power semiconductor device according to the embodiment may include additional components.

[0078] The drain electrode 211 is disposed under the substrate 212. The drain electrode 211 can supply a drain voltage to the substrate 212. The drain electrode 211 may include a drain pad or a drain pad may be separately disposed under the drain electrode 211. The drain electrode 211 may be formed of Ni or other suitable material that forms an ohmic contact with n-type silicon carbide (SiC).

[0079] The substrate 212 and / or the drift layer 213 may include a semiconductor compound such as SiC, gallium nitride (GaN), gallium oxide (Ga2O3), etc. For example, the substrate 212 and / or the drift layer 213 may include, but is not limited to, a 4H-SiC material. For example, the substrate 212 and / or the drift layer 213 may include 3C-SiC or 6H-SiC.

[0080] The drift layer 213 is disposed on the substrate 212. The drift layer 213 may be the substrate 212 or an epitaxial layer. The substrate 212 and the drift layer 213 may form a drain region, but are not limited thereto.

[0081] The drift layer 213 may include, but is not limited to, one or more drift regions. The drift layer 213 may be referred to as a drift region.

[0082] The substrate 212 and the drift layer 213 may have the same conductivity type. For example, the substrate 212 and the drift layer 213 may have a first conductivity type. The first conductivity type may be, but is not limited to, an N-type. To this end, the substrate 212 and the drift layer 213 may include an N-type dopant.

[0083] The bodies 214-1, 214-2 are formed in the drift layer 213 and are separated from each other. The bodies 214-1, 214-2 may have a second conductivity type. The bodies 214-1, 214-2 may include, for example, a P-type dopant. If the bodies 214-1, 214-2 include a P-type dopant, the bodies 214-1, 214-2 may be referred to as P-wells. The bodies 214-1, 214-2 may be referred to as base regions.

[0084] The contact regions 216-1, 216-2 and the source regions 215-1, 215-2 are disposed in the bodies 214-1, 214-2. The contact regions 216-1, 216-2 may have the same conductivity type as the bodies 214-1, 214-2, i.e., the second conductivity type. The source regions 215-1, 215-2 may have the same conductivity type as the drift region, i.e., the first conductivity type. The source regions 215-1, 215-2 and the contact regions 216-1, 216-2 are disposed adjacent to each other. The dopant concentration P+ of the contact regions 216-1, 216-2 may be greater than the dopant concentration P− of the bodies 214-1, 214-2.

[0085] 3, the source regions 215-1 and 215-2 may have a stripe shape arranged long along one direction (Y-axis direction). On the other hand, the contact regions 216-1 and 216-2 may penetrate the source regions 215-1 and 215-2 and contact the bodies 214-1 and 214-2. The contact regions 216-1 and 216-2 may be formed for each active cell, but the embodiment is not limited thereto.

[0086] A source electrode 219 may be in contact with the contact regions 216-1, 216-2 and the source regions 215-1, 215-2. The source electrode 219 may be made of nickel (Ni) or the like. An annealing process is performed to allow the source electrode 219 to form ohmic contacts with the contact regions 216-1, 216-2 and / or the source regions 215-1, 215-2.

[0087] The source electrode 219 is disposed on the entire active region 206. The source electrode 219 is disposed on the gate electrode 217. Although not shown, the source electrode 219 may not be disposed on the gate electrode 217 and may be disposed only on the contact regions 216-1 and 216-2 and the source regions 215-1 and 215-2.

[0088] A gate electrode 217 is disposed on the drift layer 213 between the mutually separated bodies 214-1, 214-2. The gate electrode 217 is surrounded by an insulating layer 218. The insulating layer 218 may be referred to as a gate oxide film. Another insulating layer may be disposed under the source electrode 219, but is not limited thereto.

[0089] In a semiconductor device having the above structure, a channel layer between the drift layer 213 and the source regions 215-1, 215-2 is made conductive when a gate voltage is supplied to the gate electrode 217, allowing a current to flow between the source regions 215-1, 215-2 and the drift layer 213. Thus, the channel layer between the drift layer 213 and the source regions 215-1, 215-2 is made conductive or closed depending on the high or low level of the gate voltage, thereby implementing a switching function.

[0090] [First Example] 6 is a cross-sectional view illustrating the power semiconductor device according to the first embodiment, taken along lines AA' and BB' of the power semiconductor device according to the embodiment illustrated in FIG.

[0091] As shown in FIG. 6, the power semiconductor device 200A may be divided into an active region 206 and a termination region 207. As described above, the active region 206 may include a plurality of active cells 206-1 to 206-4 each constituting a semiconductor device, and the termination region 207 may be located along the periphery of the active region. The termination region 207 may provide a high breakdown voltage by dispersing an electric field. A breakdown voltage of 1,200V or more may be generated by an electric field applied to a plurality of semiconductor devices included in the active region 206 during operation. In this case, the termination region 207 may be located along the periphery of the active region 206, and the electric field may be dispersed by the termination region 207, allowing the power semiconductor device 200A to withstand the breakdown voltage.

[0092] The power semiconductor device 200A of the first embodiment may include a drain electrode 211, a substrate 212, a drift layer 213, bodies 214-1, 214-2, source regions 215-1, 215-2, contact regions 216-1, 216-2, a gate electrode 217, an insulating layer 218, and a source electrode 219.

[0093] Substrate 212 may include an active area 206 and a termination area 207. Active area 206 may include a plurality of active cells 206-1 through 206-4.

[0094] A drain electrode 211 is disposed below a substrate 212, and a drift layer 213, bodies 214-1 and 214-2, source regions 215-1 and 215-2, contact regions 216-1 and 216-2, a gate electrode 217, an insulating layer 218, and a source electrode 219 are disposed above the substrate 212.

[0095] The drain electrode 211 and the drift layer 213 are disposed on the entire region of the substrate 212. The bodies 214-1 and 214-2 are disposed in the drift layer 213 between the adjacent active cells 206-1 to 206-4. The source regions 215-1 and 215-2, the gate electrode 217 and the insulating layer 218 are disposed for each of the active cells 206-1 to 206-4. The source regions 215-1 and 215-2 are disposed in the bodies 214-1 and 214-2, the gate electrode 217 is disposed on the drift layer 213, and the insulating layer 218 may surround the gate electrode 217. In particular, the insulating layer 218 is located between the drift layer 213 and the gate electrode 217 and may function as a gate oxide film. The contact regions 216-1 and 216-2 are disposed between the adjacent active cells 206-1 to 206-4. The contact regions 216-1 and 216-2 are disposed in the bodies 214-1 and 214-2. The contact regions 216-1 and 216-2 may be horizontally in contact with the source regions 215-1 and 215-2. The contact regions 216-1 and 216-2 may be in contact with the bodies 214-1 and 214-2 by penetrating the source regions 215-1 and 215-2 disposed between the adjacent active cells 206-1 to 206-4.

[0096] The source electrode 219 is disposed on the entire region of the substrate 212. The source electrode 219 is disposed on the active region 206. The source electrode 219 is not disposed on the gate electrode 217, but is disposed on the source regions 215-1 and 215-2.

[0097] The drain electrode 211, substrate 212, drift layer 213, bodies 214-1, 214-2, source regions 215-1, 215-2, contact regions 216-1, 216-2, gate electrode 217, insulating layer 218 and source electrode 219 form a semiconductor element for each of active cells 206-1 to 206-4.

[0098] Since four active cells 206-1 to 206-4 are illustrated in the drawing, the active region 206 includes four semiconductor elements corresponding to the active cells 206-1 to 206-4.

[0099] Meanwhile, the edge of the edge region 207 may be located at the outer edge, i.e., the border, of the active cells. As described above, the edge region 207 surrounds the active cells 206-1 to 206-4. This allows the active cells 206-1 to 206-4 and the edge region 207 to be horizontally positioned.

[0100] A junction termination extension (JTE) 220 is disposed in the termination region 207. The junction termination 220 may have the same conductivity type, i.e., the second conductivity type, as the bodies 214-1 and 214-2 (hereinafter referred to as the outermost body 214-3) located at the outermost periphery of the active region 206. The termination region 207 is configured to disperse an electric field and is a very important region capable of increasing the breakdown voltage. In order to increase the breakdown voltage of the power semiconductor device 200A, an optimized design for the termination region 207 is required.

[0101] Hereinafter, the bodies 214-1, 214-2 described in relation to the joint termination portion 220 in the termination region 207 may be referred to as the outermost body 214-3 unless otherwise specified.

[0102] The junction termination 220 is disposed along the periphery of the active region 206. The junction termination 220 is disposed horizontally with the outermost body 214-3. The outermost body 214-3 and the junction termination 220 may be formed in the drift layer 213 and may have the same conductivity type. An upper side of the outermost body 214-3 and an upper side of the junction termination 220 may be located on the same horizontal line.

[0103] The lower side of the outermost body 214-3 may be located lower than the lower side of the joint end portion 220, but is not limited thereto.

[0104] The junction termination 220 may include at least one blocking region 221 and a plurality of isolation regions 222-1 to 222-n. The blocking region 221 and / or the plurality of isolation regions 222-1 to 222-n may have a ring shape, but is not limited thereto. For example, the blocking region 221 may have a ring shape along the periphery of the active region 206. The plurality of isolation regions 222-1 to 222-n may each have a ring shape along the periphery of the active region 206.

[0105] The blocking region 221 can be called a single junction, and the multiple isolation regions 222-1 to 222-n each having a ring shape can be called a FFR (Floating Field Ring).

[0106] The blocking region 221 can primarily block an electric field. The electric field generated in the active region 206 is primarily blocked by the blocking region 221.

[0107] The blocking region 221 is disposed horizontally above the side of the outermost body 214-3. The blocking region 221 may contact the side of the outermost body 214-3, but is not limited thereto. The underside of the outermost body 214-3 may be located lower than the underside of the blocking region 221. The depth (or thickness) of the blocking region 221 may be smaller than the depth (or thickness) of the outermost body 214-3, but is not limited thereto.

[0108] Meanwhile, the separation regions 222-1 to 222-n may function to further block the electric field remaining after being primarily blocked by the blocking region 221.

[0109] The plurality of separation regions 222-1 to 222-n are arranged along a side direction of the blocking region 221. The blocking region 221 and the plurality of separation regions 222-1 to 222-n are arranged horizontally. The plurality of separation regions 222-1 to 222-n may be located farther from the outermost body 214-3 than the blocking region 221. The plurality of separation regions 222-1 to 222-n are arranged sequentially from the outermost body 214-3 toward an edge of the substrate 212. The blocking region 221 and the plurality of separation regions 222-1 to 222-n may have the same depth (or thickness).

[0110] The blocking region 221 and the isolation regions 222-1 to 222-n may have the same conductivity type, for example, the second conductivity type. The blocking region 221 and the isolation regions 222-1 to 222-n may be formed using the same mask. The bodies 214-1 and 214-2 (including the outermost body 214-3), the blocking region 221, and the isolation regions 222-1 to 222-n may be formed using the same mask.

[0111] A plurality of separation distances d11 to d13 are formed between the blocking region 221 and each of the plurality of isolation regions 222-1 to 222-n. For example, the distance between the blocking region 221 and a first isolation region 222-1 to 222-n that is the closest to the blocking region 221 among the plurality of isolation regions 222-1 to 222-n is defined as a first separation distance d11. For example, the distances between the plurality of isolation regions 222-1 to 222-n are the remaining separation distances d12 and d13.

[0112] As an example, the first separation distance d11 may be smaller than each of the remaining separation distances d12 to d13.

[0113] As another example, the first spacing d11 and the remaining spacings d12 to d13 may increase in size as they move away from the outermost body 214-3.

[0114] As yet another example, the first separation distance d11 and the remaining separation distances d12 to d13 may be the same.

[0115] Meanwhile, the blocking region 221 has at least one sub-blocking region 221 disposed therein. The sub-blocking regions 221 may be separated from each other. The blocking region 221 and the at least one sub-blocking region 221 may have the same conductivity type as the contact regions 216-1, 216-2, for example, the second conductivity type. The dopant concentration P+ of the sub-blocking region 221 may be greater than the dopant concentration P- of the blocking region 221. The multiple sub-blocking regions 221 allow for better distribution of the electric field.

[0116] The blocking region 221 and the isolation regions 222-1 to 222-n are deep junctions, and high implant energy is required to realize them. Accordingly, the design rule is to increase the number of the isolation regions 222-1 to 222-n while maintaining the predetermined spacings d11 to d13. When the design rule is applied to the semiconductor design, the size of the power semiconductor device 200A increases. Furthermore, when the design rule is applied to the semiconductor design, it becomes difficult to achieve an optimized spatial design, and the breakdown voltage of the semiconductor design decreases.

[0117] In particular, the first separation distance d11 is required to be the smallest of the multiple separation distances d11 to d13, for example, 1 μm or less. This is because the smaller the first separation distance d11, the easier it is to design a desired optimized space without the limitations of design rules. Therefore, a new structure is required in which the first sub-regions 222-1a to 222na are formed with a first separation distance d11 of 1 μm or less from the outermost body 214-3, and which allows the design of an optimized space without the limitations of design rules.

[0118] Hereinafter, a power semiconductor device 200B having a new structure for solving the above-mentioned problems will be described with reference to Figures 7 to 9. That is, the power semiconductor device 200B according to the second embodiment can achieve an optimal space design and improved breakdown voltage performance.

[0119] [Second Example] Fig. 7 is a cross-sectional view illustrating a power semiconductor device according to a second embodiment of the present invention, and Fig. 8 is an enlarged cross-sectional view illustrating a junction end portion of the power semiconductor device according to the second embodiment of the present invention illustrated in Fig. 7.

[0120] The second embodiment is similar to the first embodiment except for a plurality of separation regions 222-1 to 222-n each including at least two sub-regions. In the second embodiment, components having the same structure, shape and / or function as those in the first embodiment are given the same reference numerals and detailed description is omitted. The following description omitted can be replaced with the description of the first embodiment (FIG. 6) and can be easily understood by the description of the first embodiment (FIG. 6).

[0121] 7 and 8, the power semiconductor element 200B of the second embodiment may include a drain electrode 211, a substrate 212, a drift layer 213, bodies 214-1, 214-2, source regions 215-1, 215-2, contact regions 216-1, 216-2, a gate electrode 217, an insulating layer 218 and a source electrode 219.

[0122] An active area 206 and a termination area 207 are disposed on a substrate 212. As shown in Figures 2 to 5 and 7, the active area 206 may include a plurality of active cells 206-1 to 206-4, and the termination area 207 may surround the active area 206.

[0123] A drift layer 213 is disposed on the substrate 212, and a drain electrode 211 is disposed under the substrate 212. Bodies 214-1 and 214-2 are disposed in the drift layer 213 of the active region 206, and contact regions 216-1 and 216-2 and source regions 215-1 and 215-2 are disposed in the bodies 214-1 and 214-2. In addition, a gate electrode 217 and an insulating layer 218 are disposed on the drift layer 213 between the adjacent bodies 214-1 and 214-2. At this time, the insulating layer 218 may surround the gate electrode 217. A source electrode 219 is disposed on the substrate 212. The source electrode 219 is disposed on the active region 206, but is not limited thereto.

[0124] A semiconductor element is formed by the drain electrode 211, substrate 212, drift layer 213, bodies 214-1, 214-2, contact regions 216-1, 216-2, source regions 215-1, 215-2, gate electrode 217, insulating layer 218 and source electrode 219 included in each of the multiple active cells 206-1 to 206-4 in the active region 206.

[0125] Further, a junction termination 220 is disposed in the termination region 207. The junction termination 220 may include at least one or more blocking regions 221 and a plurality of isolation regions 222-1 to 222-n. The blocking region 221 and the isolation regions 222-1 to 222-n may have the same conductivity type, for example, the second conductivity type. The blocking region 221 and the isolation regions 222-1 to 222-n may have the same conductivity type as the bodies 214-1 and 214-2 (including the outermost body 214-3). The dopant concentration of the blocking region 221 may be the same as or greater than the dopant concentration of the bodies 214-1 and 214-2. The dopant concentration of the isolation regions 222-1 to 222-n may be the same as or greater than the dopant concentration of the bodies 214-1 and 214-2.

[0126] The blocking region 221 is disposed adjacent to the outermost body 214-3. The blocking region 221 is disposed horizontally with the outermost body 214-3. The blocking region 221 is disposed on a side of the outermost body 214-3. The blocking region 221 can contact the outermost body 214-3.

[0127] The depth (or thickness) of the bodies 214-1, 214-2 (including the outermost body 214-3) may be greater than the depth (or thickness) of the blocking region 221 or the depth (or thickness) of the isolation regions 222-1 to 222-n. At least one of the isolation regions 222-1 to 222-n may have the same conductivity type as the blocking region 221. At least one of the isolation regions 222-1 to 222-n may have the same conductivity type as the bodies 214-1, 214-2.

[0128] Meanwhile, each of the isolation regions 222-1 to 222-n may include two or more sub-regions. The two or more sub-regions may have the same conductivity type as the blocking region 221. The two or more sub-regions may have the same conductivity type as the bodies 214-1 and 214-2.

[0129] For example, the two or more sub-regions may include first sub-regions 222-1a to 222na and second sub-regions 222-1b to 222-nb.

[0130] The first sub-regions 222-1a to 222na and the second sub-regions 222-1b to 222-nb may have different dopant concentrations. The first sub-regions 222-1a to 222na and the second sub-regions 222-1b to 222-nb may be adjacent to each other. For example, the first sub-regions 222-1a to 222na may be closer to the outermost body 214-3 than the second sub-regions 222-1b to 222-nb. For example, the second sub-regions 222-1b to 222-nb may be farther from the outermost body 214-3 than the first sub-regions 222-1a to 222na.

[0131] The dopant concentration of the first sub-regions 222-1a to 222na may be the same as the dopant concentration of the bodies 214-1 and 214-2 (including the outermost body 214-3). The dopant concentration of the second sub-regions 222-1b to 222-nb may be the same as the dopant concentration of the bodies 214-1 and 214-2. The first dopant concentration of the first sub-regions 222-1a to 222na may be greater than the second dopant concentration of the second sub-regions 222-1b to 222-nb. The first dopant concentration of the first sub-regions 222-1a to 222na may be greater than the dopant concentration of the bodies 214-1 and 214-2. The second dopant concentration of the second sub-regions 222-1b to 222-nb may be the same as the dopant concentration of the blocking region 221. For example, the blocking region 221 and the second sub-regions 222-1b to 222-nb may be formed in the drift layer 213 using the same mask, but the present invention is not limited thereto.

[0132] Meanwhile, a plurality of separation distances d21 to d23 are defined between the blocking region 221 and each of the plurality of isolated regions 222-1 to 222-n. For example, the distance between the blocking region 221 and the first sub-regions 222-1a to 222na of the first isolated region 222-1 to 222-n that is the closest to the blocking region 221 among the plurality of isolated regions 222-1 to 222-n is defined as the first separation distance d21. For example, the distances between the first sub-regions 222-1a to 222na of the plurality of isolated regions 222-1 to 222-n are defined as the remaining separation distances d22, d23.

[0133] Alternatively, the plurality of separation distances d21 to d23 may be defined based on the second sub-regions 222-1b to 222-nb included in the plurality of isolation regions 222-1 to 222-n, respectively, but the present invention is not limited thereto.

[0134] As an example, the first separation distance d21 may be smaller than each of the remaining separation distances d22, d23.

[0135] As another example, the first spacing d21 and the remaining spacings d22 and d23 may increase in size as they move away from the outermost body 214-3.

[0136] In the second embodiment, the first separation distance d21 is smaller than the first separation distance d11 of the first embodiment (FIG. 6) because it is implemented as a shallow junction and is defined by the first sub-regions 222-1a to 222na having a first dopant concentration greater than the second dopant concentration of the second sub-regions 222-1b to 222-nb. Thus, in the second embodiment, the first separation distance d21 is at least 1 μm or less, thereby obtaining an optimized space without design rule limitations.

[0137] Meanwhile, the first sub-regions 222-1a to 222na and the second sub-regions 222-1b to 222-nb may have different depths or thicknesses T, T2. For example, the first sub-regions 222-1a to 222na are formed as shallow junctions, and the second sub-regions 222-1b to 222-nb are formed as deep junctions. For example, the first dopant concentration of the first sub-regions 222-1a to 222na may be higher than the second dopant concentration of the second sub-regions 222-1b to 222-nb. As a result, the first sub-regions 222-1a to 222na are positioned shallowly near the surface of the drift layer 213, and therefore can be formed by an ion implantation process using low energy. On the other hand, the second sub-regions 222-1b to 222-nb are located deeper from the surface of the drift layer 213 than at least the first sub-regions 222-1a to 222na, and are therefore formed by an ion implantation process using high energy.

[0138] Since the second sub-regions 222-1b to 222-nb must be formed deep during the high energy ion implantation process, it is difficult to narrow the interval between the second sub-regions 222-1b to 222-nb. However, since the second sub-regions 222-1b to 222-nb are positioned deeper than the first sub-regions 222-1a to 222na, the electric field is more appropriately distributed.

[0139] Meanwhile, since the first sub-regions 222-1a to 222na are formed shallowly during the ion implantation process having low energy, the interval between the first sub-regions 222-1a to 222na can be reduced as much as possible. Therefore, the first sub-regions 222-1a to 222na of the first isolation regions 222-1 to 222-n closest to the outermost body 214-3 are formed at a first separation distance d21 of at least 1 μm or less from the outermost body 214-3. By reducing the first separation distance d21 as much as possible, the electric field is largely dispersed by the first sub-regions 222-1a to 222na of the first isolation regions 222-1 to 222-n among the plurality of isolation regions 222-1 to 222-n.

[0140] Similarly, the remaining separation distances d22, d23 between the respective sub-regions of the isolation regions 222-1 to 222-n are also narrowly formed by a low energy ion implantation process. As a result, even if a very strong electric field is formed in the power semiconductor device 200B by the isolation regions 222-1 to 222-n each including at least two sub-regions, the electric field is appropriately dispersed by the blocking region 221 and the isolation regions 222-1 to 222-n during operation, and the breakdown voltage can be further increased. As shown in FIG. 9, the power semiconductor device 200B capable of withstanding a breakdown voltage of at least 1,600V is realized.

[0141] According to the second embodiment, each of the plurality of isolation regions 222-1 to 222-n includes two or more sub-regions, so that each of the plurality of separation intervals d21 to d23 is smaller than each of the plurality of separation intervals d11 to d13 of the first embodiment (FIG. 6).

[0142] As described above, in the first embodiment (FIG. 6), each of the isolation regions 222-1 to 222-n is a single region. At this time, a high-energy ion implantation process is performed to realize deep junctions for forming the single region, which makes it difficult to narrow the isolation distances d11 to d13.

[0143] In contrast, according to the second embodiment (FIGS. 7 and 8), each of the isolation regions 222-1 to 222-n may include two or more sub-regions, i.e., the first sub-regions 222-1a to 222na and the second sub-regions 222-1b to 222-nb. In this case, the first sub-regions 222-1a to 222na closer to the outermost body 214-3 are implemented as shallow junctions, and an ion implantation process having a relatively low energy is performed, so that the separation distances d21 to d23 can be narrower than those in the first embodiment (FIG. 6), and an optimized space can be designed without the limitations of the design rule.

[0144] Furthermore, the second sub-regions 222-1b to 222-nb, which have a second dopant concentration lower than the first dopant concentration of the first sub-regions 222-1a to 222na, appropriately distribute the electric field, thereby achieving a desired breakdown voltage. That is, an optimized space that complies with the design rule restriction is designed by the first sub-regions 222-1a to 222na in each of the multiple isolation regions 222-1 to 222-n, and the desired breakdown voltage is achieved by the electric field distribution by the second sub-regions 222-1b to 222-nb.

[0145] When the dopant concentration of the isolation regions 222-1 to 222-n is reduced to distribute the electric field, the design rule becomes larger due to the high energy ion implantation process performed to realize the deep junction. On the other hand, when the dopant concentration of the isolation regions 222-1 to 222-n is increased to reduce the design rule, the electric field is concentrated in the isolation regions 222-1 to 222-n, and the breakdown voltage is reduced. The second embodiment has a special technical effect of simultaneously solving the contradiction between the two. That is, in the second embodiment, each of the isolation regions 222-1 to 222-n includes two or more sub-regions, and the design rule is reduced by the first sub-regions 222-1a to 222na that are closer to the outermost body 214-3, and the breakdown voltage of, for example, 1,600V or more is achieved by the appropriate distribution of the electric field by the second sub-regions 222-1b to 222-nb (FIG. 9). The product reliability of the power semiconductor device 200B according to the second embodiment, which has the technical effect, is ensured, and the device can be applied to various frontier industries that require a higher breakdown voltage, such as ultra-high voltage power generation, power transmission and distribution equipment, electric vehicles, etc.

[0146] Meanwhile, an upper side 1A of the first sub-regions 222-1a to 222na and an upper side 1B of the second sub-regions 222-1b to 222-nb may be positioned on the same horizontal line, and a lower side 1D of the second sub-regions 222-1b to 222-nb may be positioned lower than a lower side 1C of the first sub-regions 222-1a to 222na.

[0147] The first sub-regions 222-1a to 222na and / or the second sub-regions 222-1b to 222-nb are formed in the drift layer 213 using an ion implantation process. When the upper side of the drift layer 213 has a flat surface, the first sub-regions 222-1a to 222na and / or the second regions are formed by impurities including ions implanted through the upper side of the drift layer 213. As a result, the upper side 1A of the first sub-regions 222-1a to 222na and the upper side 1B of the second sub-regions 222-1b to 222-nb formed in the drift layer 213 can be positioned on the same horizontal line.

[0148] The first sub-regions 222-1a to 222na and the second sub-regions 222-1b to 222-nb are formed by an ion implantation process using different energies. For example, the first sub-regions 222-1a to 222na are formed by an ion implantation process having low energy, and the second sub-regions 222-1b to 222-nb are formed by an ion implantation process having high energy. As a result, a lower side 1D of the second sub-regions 222-1b to 222-nb formed by an ion implantation process having high energy can be located lower than a lower side 1C of the first sub-regions 222-1a to 222na formed by an ion implantation process having low energy. That is, the impurities forming the second sub-regions 222-1b to 222-nb are formed deeper from the upper side of the drift layer 213 than the impurities forming the first sub-regions 222-1a to 222na. The lower sides 1D of the deeper second sub-regions 222-1b to 222-nb may be located lower than the lower sides 1C of the first sub-regions 222-1a to 222na.

[0149] Meanwhile, the separation regions 222-1 to 222-n may include overlapping regions 222-1c to 222-nc, respectively. The overlapping regions 222-1c to 222-nc may include parts of the first sub-regions 222-1a to 222na and parts of the second sub-regions 222-1b to 222-nb. That is, the overlapping regions 222-1c to 222-nc are formed by mixing a first impurity for forming the first sub-regions 222-1a to 222na and an impurity for forming the second sub-regions 222-1b to 222-nb.

[0150] For example, after the first sub-regions 222-1a to 222na are formed in the drift layer 213 using a first impurity, the second sub-regions 222-1b to 222-nb are formed in the drift layer 213 using a second impurity. At this time, the second impurity is injected into a partial region of the already formed first sub-regions 222-1a to 222na and into the drift layer 213 in contact with the partial region of the first sub-regions 222-1a to 222na, so that overlapping regions 222-1c to 222-nc are formed in the partial region of the first sub-regions 222-1a to 222na, and the second sub-regions 222-1b to 222-nb are formed in the drift layer 213 in contact with the partial region of the first sub-regions 222-1a to 222na.

[0151] The lower side 1D of the second sub-regions 222-1b to 222-nb may be located under the overlapping regions 222-1c to 222-nc. As described above, the energy of the ion implantation process used to form the second sub-regions 222-1b to 222-nb is greater than the energy of the ion implantation process used to form the first sub-regions 222-1a to 222na. Therefore, the second impurity is implanted into a portion of the first sub-regions 222-1a to 222na already formed and into the drift layer 213 adjacent to the portion of the first sub-regions 222-1a to 222na by an ion implantation process having high energy. As a result, a portion of the second impurity is implanted into a portion of the first sub-regions 222-1a to 222na and mixed with the first impurity contained in the portion of the first sub-regions 222-1a to 222na to form the overlapping regions 222-1c to 222-nc. Another part of the second impurity passes through a portion of the first sub-regions 222-1a to 222na and is injected into the drift layer 213 above a lower part of the portion of the first sub-regions 222-1a to 222na, thereby forming a part of the second sub-regions 222-1b to 222-nb. Yet another part of the second impurity is injected into the drift layer 213 in contact with the portion of the first sub-regions 222-1a to 222na, thereby forming the second sub-regions 222-1b to 222-nb. Therefore, the lower side 1D of the second sub-regions 222-1b to 222-nb can be located below the overlapping regions 222-1c to 222-nc.

[0152] Although it has been described above that the first sub-regions 222-1a to 222na are formed before the second sub-regions 222-1b to 222-nb are formed, the order can be changed.

[0153] Meanwhile, as shown in Fig. 9, by including the plurality of isolation regions 222-1 to 222-n, it can be seen that the embodiment maintains a constant breakdown voltage regardless of an increase or decrease in dopant concentration (e.g., the dopant concentration may be the same as in the previous process) compared to the comparative example. The comparative example is a power semiconductor device that does not include the plurality of isolation regions 222-1 to 222-n, and the embodiment is a power semiconductor device that includes the plurality of isolation regions 222-1 to 222-n. In particular, the embodiment is a power semiconductor device in which the plurality of isolation regions 222-1 to 222-n are each separated into two or more sub-regions, and maintains a constant breakdown voltage of at least 1,600V regardless of an increase or decrease in dopant concentration.

[0154] The above detailed description should not be construed as limiting in all respects, but should be considered as illustrative. The scope of the embodiments should be determined by a reasonable analysis of the appended claims, and all modifications within the equivalent scope of the embodiments are included in the scope of the embodiments.

Claims

1. A substrate; a drift layer formed on the substrate including an active area having a doped region and a termination region surrounding the active area; a joint termination in the termination region; the substrate and the drift layer include a first conductivity type; the doped region and the junction termination comprise a second conductivity type; the junction termination includes at least one blocking region adjacent to the active region and a plurality of isolation regions; Each of the plurality of separation regions includes two or more sub-regions; The two or more sub-regions have different dopant concentrations from one another.

2. Each of the plurality of isolation regions is a first dopant concentration in a first subregion; a second subregion having a second dopant concentration; the first dopant concentration is greater than the second dopant concentration; The power semiconductor device of claim 1 , wherein the first sub-region is located closer to an edge of the active area than the second sub-region.

3. the plurality of isolation regions include a first isolation region adjacent to the at least one blocking region and a second isolation region adjacent to the first isolation region; a distance between the first isolation region and the at least one blocking region is less than a distance between the first isolation region and the second isolation region; The power semiconductor device of claim 2 , wherein a distance between adjacent isolation regions is a function of a distance between an inner isolation region of the adjacent isolation regions and the at least one blocking region.

4. The power semiconductor element according to claim 2 , wherein each of the plurality of isolation regions includes an overlapping region that includes a portion of the first sub-region and a portion of the second sub-region.

5. 2. The power semiconductor device of claim 1, wherein the first dopant concentration of the first sub-region or the second dopant concentration of the second sub-region is the same as the dopant concentration of the doped region.

6. A substrate; a drift layer over the substrate including an active area having a doped region and a termination region surrounding the active area; the termination region includes at least one blocking region and a plurality of separation regions; the at least one blocking region borders a side of at least one doped region disposed at an edge of the active region; The plurality of separation regions are arranged along a lateral direction of the at least one blocking region, Each of the plurality of isolation regions is a first subregion having a first dopant concentration; a second subregion having a second dopant concentration that is less than the first dopant concentration of the first subregion.

7. the plurality of separation intervals are comprised of a first separation interval and remaining separation intervals, the first separation interval being smaller than each of the remaining separation intervals; the first separation distance is between a first sub-region of a first isolation region that is closest to the at least one blocking region among the plurality of isolation regions and the at least one blocking region; the remaining separation distances are between first sub-regions of the isolation regions; The power semiconductor device of claim 6 , wherein the first spacing and the remaining spacing increase with increasing distance from the outermost body.

8. The power semiconductor element according to claim 6 , wherein each of the plurality of isolation regions includes an overlapping region that includes a portion of the first sub-region and a portion of the second sub-region.

9. The power semiconductor device according to claim 6 , wherein the at least one blocking region and the plurality of isolation regions have a ring shape.

10. A power semiconductor module includes: Each of the plurality of power semiconductor modules includes a plurality of power semiconductor elements, Each of the plurality of power semiconductor elements A substrate; a drift layer formed on the substrate, the drift layer including an active region having a doped region and a termination region surrounding the active region; a junction termination (JTE) in the termination region; the substrate and the drift layer include a first conductivity type; the doped region and the junction termination (JTE) comprise a second conductivity type; The joint end portion includes at least one blocking region and a plurality of separation regions located farthest from an outermost body from the at least one blocking region, each of the plurality of separation regions includes two or more separation sub-regions; The two or more isolation sub-regions are configured to have different doping concentrations from one another.

Images