Power semiconductor device continuous switch test circuit and method

By designing a continuous switching test circuit for power semiconductor devices including a current generator, voltage balancing module, auxiliary module and capacitor discharge module, the continuous switching test problem of IGBT devices under MMC conditions is solved, voltage and current stress decoupling and equipment simplification are achieved, and cost and power supply requirements are reduced.

CN119667426AActive Publication Date: 2025-03-21NORTH CHINA ELECTRIC POWER UNIV
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Patent Information

Application Number
CN202411603844.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-12
Publication Date
2025-03-21
Estimated Expiration
2044-11-12

AI Technical Summary

Technical Problem

The continuous switching test of existing IGBT devices under MMC conditions is difficult to achieve, and the test platform needs to provide high voltage and high current, resulting in a huge size and high cost, which makes it difficult to meet the needs.

Method used

It provides a continuous switching test circuit for power semiconductor devices, including a current generator, voltage balancing module, auxiliary module and capacitor discharge module. These modules form a loop to provide the test voltage and test current in a continuous switching state for the power semiconductor devices to be tested, and realize voltage and current stress decoupling.

Benefits of technology

The continuous switching test of IGBT devices under MMC operating conditions is realized, which reduces the power supply requirements, simplifies equipment design, and reduces costs.

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Abstract

The invention discloses a power semiconductor device continuous switch test circuit and method, and relates to the field of power electronics, and the test circuit comprises a current generator which is used for generating a test current; the voltage balance module is used for generating test voltage; the auxiliary module is connected with the current generator and the voltage balance module and is used for providing test voltage and test current required in a continuous switching state for the power semiconductor device T1 to be tested; the capacitor discharging module is used for controlling the magnitude of voltage connected to the two ends of the power semiconductor device T1 to be tested; wherein the voltage balance module comprises a power semiconductor device Tc2 and a capacitor C1; the power semiconductor device Tc2 controls the capacitor C1 to apply voltage to the inductor L in the auxiliary module, and the voltage at the two ends of the inductor L is balanced. According to the application, the continuous switching condition simulation of the power semiconductor device T1 to be tested is met, and voltage and current stress decoupling is realized, so that a voltage source does not need higher voltage stress, and the requirement on a power supply is reduced.
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