Substrate processing device, substrate processing method, and manufacturing method of semiconductor device

Abstract

To provide a substrate processing device which can smoothly discharge a processing liquid scattering from a substrate, and to provide a substrate processing method and a manufacturing method of a semiconductor device.SOLUTION: A substrate processing device 10 includes: a holding part 21 which holds a substrate S; a supply part 22 which supplies a processing liquid to the substrate S held by the holding part 21; a rotation drive part 23 which rotates the substrate S held by the holding part 21; a receiving part 24 which receives the processing liquid scattering from the substrate S held by the holding part 21; an electrode part 25 provided at a surface portion which receives the processing liquid in the receiving part 24; an insulation part which covers an electrode surface of the electrode part 25; and a voltage control unit 27 which controls a voltage applied to the electrode part 25.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present embodiment relates to a substrate processing apparatus, a substrate processing method, and a method for manufacturing a semiconductor device. [Background technology]

[0002] 2. Description of the Related Art There is widely known a substrate processing apparatus that processes a substrate by supplying a processing liquid to a substrate surrounded by a cup and then rotating the substrate to diffuse the processing liquid over the surface of the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2014-207320 A Summary of the Invention [Problem to be solved by the invention]

[0004] According to the present embodiment, a substrate processing apparatus, a substrate processing method, and a method for manufacturing a semiconductor device are provided that are capable of smoothly discharging processing liquid that has splashed from a substrate. [Means for solving the problem]

[0005] The substrate processing apparatus according to this embodiment includes a holding section for holding a substrate, a supply section for supplying a processing liquid to the substrate held in the holding section, a rotation drive section for rotating the substrate held in the holding section, a receiving section for receiving processing liquid splashed from the substrate held in the holding section, an electrode section provided on the surface portion of the receiving section that receives the processing liquid, an insulating section that covers the electrode surface of the electrode section, and a voltage control section that controls the voltage applied to the electrode section. [Brief description of the drawings]

[0006] [Figure 1] 1 is a cross-sectional view showing a cross-sectional structure of a semiconductor device according to an embodiment of the present invention. [Diagram 2]2 is a cross-sectional view showing a cross-sectional structure around a memory layer of the semiconductor device of the present embodiment. [Diagram 3] 1 is a schematic diagram showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention; [Figure 4] FIG. 4 is a plan view of the inside of the receiving portion as viewed from below. [Diagram 5] FIG. 4 is a plan view of the inside of the receiving portion as viewed from below. [Figure 6] FIG. 2 is an enlarged view of a main part of the substrate processing section. [Figure 7] 5A to 5C are diagrams for explaining the operation of the substrate processing section. [Figure 8] 5A to 5C are diagrams for explaining the operation of the substrate processing section. [Figure 9] 4 is a timing chart of a sequence diagram showing a process flow of the substrate processing apparatus. [Figure 10] 4 is a flowchart showing a flow of a substrate processing method executed by the substrate processing apparatus. [Figure 11] FIG. 13 is a schematic diagram showing a schematic configuration of a substrate processing section according to another embodiment. [Figure 12] 13 is a schematic diagram showing an example of an insulating section of a substrate processing section according to another embodiment. FIG. [Figure 13] 13 is a schematic diagram showing an example of an insulating section of a substrate processing section according to another embodiment. FIG. [Figure 14] FIG. 13 is a schematic diagram showing a schematic configuration of a substrate processing apparatus according to another embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, an embodiment of a substrate processing apparatus, a substrate processing method, and a method for manufacturing a semiconductor device will be described with reference to the drawings. The semiconductor device of this embodiment will be described as a non-volatile storage device configured as a NAND type flash memory, but the structure of the semiconductor device is not particularly limited.

[0008] (Configuration of Semiconductor Device) Fig. 1 is a cross-sectional view showing a schematic configuration of a semiconductor device MDV according to the present embodiment, in which hatching showing cross-sectional portions is omitted in order to improve visibility of the drawing.

[0009] 1, the semiconductor device MDV includes a peripheral circuit CUA, a source line SL, and a laminated body LM. The peripheral circuit CUA, the source line SL, and the laminated body LM are formed in this order on a substrate SB. The substrate SB is a silicon substrate or the like. The peripheral circuit CUA includes transistors TR and the like, and contributes to the electrical operation of the memory cells described below. The transistors TR are formed on a substrate SB. The peripheral circuit CUA is covered with an insulating film 51. The insulating film 51 is a silicon oxide film or the like. A source line SL is formed on the insulating film 51. The source line SL is a conductive polysilicon layer or the like.

[0010] The laminate LM is formed on the source line SL. The laminate LM is composed of a plurality of laminated word lines WL. The word lines WL are tungsten layers, molybdenum layers, or the like. An insulating layer is interposed between each of the plurality of word lines WL. The insulating layer is a silicon oxide layer, or the like.

[0011] The laminate LM includes a memory region MR, a contact region PR, and a through contact region TP. A plurality of pillars PL and a plurality of contacts CC and C4 are provided in each of the regions MR, PR, and TP. The entire laminate LM is covered with an insulating film 52. The insulating film 52 is a silicon oxide film or the like.

[0012] Each of the pillars PL penetrates the laminate LM and reaches the source line SL. The detailed configuration of the pillar PL is shown in FIG.

[0013] As shown in FIG. 2, the pillar PL includes a memory layer ME and a channel layer CN. The memory layer ME and the channel layer CN are arranged in this order from the outer periphery of the pillar PL. A core layer CR is filled inside the channel layer CN. The memory layer ME has a multilayer structure in which a block insulating layer BK, a charge storage layer CT, and a tunnel insulating layer TN are stacked. The block insulating layer BK, the charge storage layer CT, and the tunnel insulating layer TN are arranged in this order from the outer periphery of the pillar PL. Note that the memory layer ME is not arranged at the lower end of the pillar PL, and the channel layer CN provided inside the memory layer ME is connected to the source line SL.

[0014] The channel layer CN is a semiconductor layer such as a polysilicon layer or an amorphous silicon layer. The core layer CR, the tunnel insulating layer TN, and the block insulating layer BK are, for example, silicon oxide layers. The charge storage layer CT is, for example, a silicon nitride layer. Note that the symbol OL shown in FIG. 2 represents an insulating layer formed between a plurality of word lines WL.

[0015] With this configuration, a plurality of memory cells MC are formed at the intersections of the pillars PL and the word lines WL, aligned in the height direction. By applying a predetermined voltage from the word lines WL to the memory cells MC, charges can be stored in the charge storage layer CT of the memory cells MC, or charges can be drawn from the charge storage layer CT. Data is written to or read from the memory cells MC by storing charges in the charge storage layer CT, or drawing charges from the charge storage layer CT. Data read from the memory cells MC is transmitted to, for example, a sense amplifier of the semiconductor device MDV via plugs and upper layer wirings provided above the pillars PL.

[0016] 1 is formed to extend to a depth at which it is connected to one of the word lines WL included in the laminate LM, and each of the contacts CC is connected to the contacts C4 via an upper layer wiring and a plug.

[0017] The contacts C4 are formed to extend through the laminate LM and the source line SL to an insulating film 51 provided below the laminate LM. The lower end of each of the contacts C4 is connected to a transistor TR of the peripheral circuit CUA through a lower layer wiring, a via, a contact, etc. in the insulating film 51.

[0018] With this configuration, the memory cells MC can be electrically operated by applying a predetermined voltage from the peripheral circuit CUA via the contacts C4 and CC to the respective memory cells MC.

[0019] (Configuration of the substrate processing apparatus) Next, a configuration of a substrate processing apparatus 10 used in the manufacturing process of the semiconductor device MDV described above will be described. The substrate processing apparatus 10 of the embodiment is, for example, a wet etching apparatus that performs wet etching of a wafer in the manufacturing process of the semiconductor device MDV, or a clean truck that performs coating and development.

[0020] 3 is a diagram showing an example of a schematic configuration of the substrate processing apparatus 10. A substrate S, which is, for example, a semiconductor substrate (wafer) on which a semiconductor device MDV in the middle of manufacture is formed, is carried into the substrate processing apparatus 10. For example, a peripheral circuit CUA (see FIG. 1) such as a transistor may be formed on the substrate S.

[0021] The substrate processing apparatus 10 has a box-shaped housing 11, and the housing 11 is provided with an entrance 12 through which the substrate S can be carried in. The entrance 12 is configured to be openable and closable by a movable cover member 13. A substrate processing section 20 that processes the substrate S using a processing liquid is provided inside the housing 11.

[0022] The substrate processing unit 20 includes, for example, a holding unit 21 (holding plate or holding table), a supply unit 22 (supply nozzle), a rotation drive unit 23, a receiving unit 24 (cup), an electrode unit 25, an insulating unit 26, and a voltage control unit 27 (voltage control circuit).

[0023] The holder 21 holds the substrate S that has been carried into the housing 11 through the carry-in entrance 12. The holder 21 is connected to the rotation drive unit 23 via a shaft 21A extending in the vertical direction. The holder 21 is configured to be rotatable about the shaft 21A when the rotation drive unit 23 is driven. The rotation drive unit 23 includes, for example, a motor control circuit that controls a rotation drive means such as a motor.

[0024] The supply unit 22 is disposed so as to face the substrate S held by the holder 21 in the vertical direction, and is configured to be able to discharge a processing liquid used to process the substrate S. The processing liquid discharged is, for example, ultrapure water, hydrochloric acid, hydrofluoric acid, a developing solution (TMAH, TM-Y, IPA, etc.).

[0025] The receiving part 24 is substantially cylindrical and has a main body 24A and an extension 24B that bends and extends radially inward from the upper end of the main body 24A. The extension 24B may be disposed above the upper surface of the substrate S held by the holder 21, and includes a surface portion that receives the processing liquid scattered from the substrate S rotated by the rotary drive part 23. An electrode part 25 is provided on the inner peripheral surfaces of the main body 24A and the extension 24B. The receiving part 24 is made of a material such as stainless steel (SUS).

[0026] 4 and 5 are plan views of the inside of the receiving portion 24 as viewed from below.

[0027] In the example shown in FIG. 4, the electrode section 25 includes, for example, a first electrode section 25A, a second electrode section 25B, and a third electrode section 25C. The first electrode section 25A is annular and is provided along the opening at the upper end of the extension section 24B of the receiving section 24. The second electrode section 25B is annular and has a larger outer diameter than the first electrode section 25A, and is provided adjacent to the first electrode section 25A below the first electrode section 25A in the direction of gravity. The third electrode section 25C is annular and has a larger outer diameter than the second electrode section 25B, and is provided adjacent to the second electrode section 25B. Each of the first electrode section 25A, the second electrode section 25B, and the third electrode section 25C is configured so that a voltage can be applied individually by the voltage control section 27. In this example, the phase of the voltage applied to each electrode portion 25 is controlled by voltage control portion 27 so that voltage is applied in the order of first electrode portion 25A, second electrode portion 25B, and third electrode portion 25C.

[0028] In the example shown in FIG. 5, similarly to the example shown in FIG. 4, the electrode section 25 includes, for example, a first electrode section 25A, a second electrode section 25B, and a third electrode section 25C. Each of the first electrode section 25A, the second electrode section 25B, and the third electrode section 25C includes a plurality of electrode units (eight in the example shown in the figure) equally divided in the circumferential direction centered on the center of the opening. Each of the plurality of electrode units is configured so that a voltage can be applied individually by the voltage control section 27. In this example, the phase of the voltage applied to each electrode unit is controlled by the voltage control section 27 so that different voltages are applied to the electrode units adjacent in the circumferential direction. Note that, although the electrode sections (first to third electrode sections) 25 are shown to be in contact with each other in FIGS. 4 and 5, they may be provided with a gap between them.

[0029] 6, each of the first electrode portion 25A, the second electrode portion 25B, and the third electrode portion 25C includes a first terminal portion 25a connected to a positive terminal of a power source 28, and a second terminal portion 25b connected to a negative terminal of the power source 28. The voltage supplied from the corresponding power source 28 to each of the first electrode portion 25A, the second electrode portion 25B, and the third electrode portion 25C is individually controlled by a voltage control portion 27.

[0030] The insulating portion 26 is made of an insulating material and is configured to cover the entire electrode portion 25, including the electrode surfaces of the first electrode portion 25A, the second electrode portion 25B, and the third electrode portion 25C, and the back surfaces opposite the electrode surfaces.

[0031] FIG. 7 is a diagram for explaining the operation of the substrate processing unit 20 according to this embodiment, in particular the operation when moving the processing liquid that has splashed from the substrate S to the receiver 24 due to the application of a voltage.

[0032] As shown in FIG. 7, when the treatment liquid adheres to the surface of the insulating portion 26 of the receiving portion 24, the surface of the adhered treatment liquid is subjected to the surface tension γS of the insulating portion 26, the surface tension γL of the treatment liquid, and the interfacial tension γSL between the insulating portion 26 and the treatment liquid. The surface tension γS of the insulating portion 26 corresponds to the force with which the insulating portion 26 spreads the treatment liquid. The surface tension of the treatment liquid corresponds to the force with which the treatment liquid narrows the surface area. The interfacial tension γSL between the insulating portion 26 and the treatment liquid corresponds to the force with which the treatment liquid narrows the surface area. These are expressed by the following formula (1).

number

[0033] In formula (1), θ represents the angle between the surface tension γL of the treatment liquid and the surface of the insulating portion 26.

[0034] 7, of the first terminal 25a and the second terminal 25b of the electrode unit 25, no voltage is applied to the first terminal 25a, whereas a voltage is applied to the second terminal 25b. The magnitude of the effect on the treatment liquid caused by the application of a voltage to the electrode unit 25 is expressed by the following formula (2).

number

[0035] In equation (2), γSL0 represents the interfacial tension between the insulating portion 26 and the treatment liquid when no voltage is applied, and γSL(V) represents the interfacial tension between the insulating portion 26 and the treatment liquid when a voltage is applied.

[0036] Then, by combining the above-mentioned formulas (1) and (2), the following formula (3) is calculated.

number

[0037] As is clear from formula (3), when a voltage is applied, the value of cosθ is larger than when no voltage is applied, and therefore the value of θ is also larger. In other words, when a voltage is applied, the angle between the surface tension γL of the treatment liquid and the surface of the insulating portion 26 is larger than when no voltage is applied.

[0038] 7, the angle between the surface tension γL of the treatment liquid and the surface of the insulating part 26 is larger in the portion of the treatment liquid that is attached to the surface of the insulating part 26 of the receiving part 24 corresponding to the first terminal part 25a to which no voltage is applied than in the portion of the treatment liquid that is attached to the second terminal part 25b to which a voltage is applied. As a result, the force component in the direction along the surface of the insulating part 26 of the treatment liquid is smaller in the surface tension γL of the treatment liquid. Therefore, in the portion of the treatment liquid that is attached to the surface of the insulating part 26 of the receiving part 24 corresponding to the second terminal part 25b to which a voltage is applied, a force acts in the direction along the surface tension γS of the insulating part 26, and the treatment liquid moves in the same direction.

[0039] FIG. 7 is a diagram for explaining the operation of the substrate processing unit 20 according to this embodiment, in particular the operation when moving the processing liquid that has splashed from the substrate S to the receiving portion 24 according to the gradient of wettability of the insulating portion 26 with respect to the processing liquid.

[0040] As shown in FIG. 8, in the treatment liquid adhering to the surface of the insulating part 26 of the receiving part 24, the angle between the surface tension γL of the treatment liquid and the surface of the insulating part 26 is larger in the part corresponding to the second insulating part 26B having a high wettability to the treatment liquid than in the part corresponding to the first insulating part 26A having a low wettability to the treatment liquid. As a result, the force component in the direction along the surface of the insulating part 26 of the treatment liquid in the surface tension γL of the treatment liquid is smaller. Therefore, in the treatment liquid adhering to the surface of the insulating part 26 of the receiving part 24, the part corresponding to the second insulating part 26B having a high wettability to the treatment liquid is subjected to a force in the direction along the surface tension γS of the insulating part 26, and the treatment liquid moves in the same direction. That is, in the receiving part 24, the application of a voltage to the electrode part 25 and the gradient of the wettability of the insulating part 26 to the treatment liquid act synergistically, so that the movement of the treatment liquid adhering to the surface of the insulating part 26 of the receiving part 24 is promoted.

[0041] Next, a flow of a substrate processing method executed by the substrate processing apparatus 10 according to the present embodiment will be described with reference to a timing chart in a sequence diagram shown in Fig. 9. The substrate processing method according to the embodiment can be performed, for example, as part of the manufacture of a semiconductor device MDV.

[0042] 9, when processing is started in the substrate processing apparatus 10, first, at time t1, a processing liquid is discharged from the supply unit 22 onto the substrate S. Also, at the same time t1, the substrate S held by the holder 21 is rotated by the rotation drive unit 23. Also, at the same time t1, a voltage is applied to the first electrode unit 25A by the voltage control unit 27.

[0043] Next, at time t2, voltage control section 27 applies a voltage to second electrode section 25B.

[0044] Next, at time t3, voltage control section 27 applies a voltage to third electrode section 25C.

[0045] That is, after the processing liquid is ejected from the supply unit 22 onto the substrate S, while the substrate S held by the holding unit 21 is rotating, voltages are applied sequentially to the first electrode unit 25A, the second electrode unit 25B, and the third electrode unit 25C.

[0046] Next, at time t4, the supply unit 22 stops discharging the processing liquid onto the substrate S. Also, at the same time t4, the voltage control unit 27 applies a voltage to the first electrode unit 25A.

[0047] Next, at time t5, voltage control section 27 applies a voltage to second electrode section 25B.

[0048] Next, at time t6, voltage control section 27 applies a voltage to third electrode section 25C.

[0049] That is, even after the supply unit 22 stops discharging the processing liquid onto the substrate S, voltages are applied sequentially to the first electrode unit 25A, the second electrode unit 25B, and the third electrode unit 25C while the substrate S held by the holding unit 21 is rotating.

[0050] Next, the flow of a substrate processing method executed by the substrate processing apparatus 10 according to this embodiment will be described with reference to the flowchart shown in FIG.

[0051] As shown in FIG. 10, the substrate processing apparatus 10 first transports a substrate into the receiver 24 (step S10).

[0052] Next, the substrate processing apparatus 10 causes the supply unit 22 to discharge a processing liquid onto the substrate S (step S11).

[0053] Next, the substrate processing apparatus 10 rotates the substrate S held by the holder 21 using the rotation drive unit 23 (step S12). Note that steps S11 and S12 may be performed simultaneously.

[0054] Next, in the substrate processing apparatus 10, the voltage control unit 27 applies a voltage to the first electrode unit 25A in parallel with the supply unit 22 discharging the processing liquid onto the substrate S (step S13).

[0055] Next, the substrate processing apparatus 10 applies a voltage to the second electrode unit 25B by the voltage control unit 27 (step S14).

[0056] Next, the substrate processing apparatus 10 applies a voltage to the third electrode unit 25C by the voltage control unit 27 (step S15).

[0057] Next, the substrate processing apparatus 10 determines whether or not to stop the application of voltage by the voltage control unit 27 (step S16). When the substrate processing apparatus 10 determines not to stop the application of voltage by the voltage control unit 27 (step S16=NO), the process returns to step S13, and repeats the processes of steps S13 to S15 until it determines to stop the application of voltage by the voltage control unit 27.

[0058] Furthermore, the substrate processing apparatus 10 stops the supply unit 22 from discharging the processing liquid onto the substrate S (step S17), and then continues to rotate the substrate S to scatter the processing liquid from the substrate S and dry it. Then, the substrate processing apparatus 10 stops the rotation of the substrate S by the rotation drive unit 23 (step S18). The timing for stopping the application of voltage by the voltage control unit 27 may be, for example, after the discharge of the processing liquid onto the substrate S has stopped, or after the rotation of the substrate S has stopped.

[0059] Next, the substrate processing apparatus 10 completes the processing of the substrate S (step S19). In this case, the substrate processing apparatus 10 may omit the process of determining whether the processing of the substrate S is completed by setting various conditions related to the processing of the substrate S in advance.

[0060] Thereafter, the substrate processing apparatus 10 transports the substrate S out of the receiver 24 (step S20), and ends the flow chart shown in FIG.

[0061] Next, the operation of the substrate processing apparatus 10 according to this embodiment will be described.

[0062] In the substrate processing apparatus 10, when a processing liquid is supplied from the supply unit 22 to the substrate S and the substrate S held by the holder 21 is rotated by the rotation drive unit 23, a part of the processing liquid scattered from the substrate S is received by the receiver 24. If the processing liquid received in the receiver 24 remains, there is a risk that the remaining processing liquid will re-adhere to the substrate S over time, affecting the processing of the substrate S.

[0063] In this embodiment, the voltage control unit 27 applies a voltage to the first electrode portion 25A, the second electrode portion 25B, and the third electrode portion 25C, which are arranged in order from top to bottom in the direction of gravity, thereby encouraging the treatment liquid received in the receiving portion 24 to move downward in accordance with gravity along the inner surface of the receiving portion 24.

[0064] Furthermore, in this embodiment, by further providing a gradient in wettability of the insulating portion 26 with respect to the treatment liquid from the top to the bottom in the direction of gravity, the treatment liquid received in the receiving portion 24 is further encouraged to move downward in accordance with gravity along the inner surface of the receiving portion 24.

[0065] In other words, the synergistic effect of the application of voltage to the electrode portion 25 and the gradient of wettability of the insulating portion 26 with respect to the treatment liquid further encourages the treatment liquid received in the receiving portion 24 to move downward due to gravity along the inner surface of the receiving portion 24.

[0066] Therefore, the retention of the processing liquid in the receiving portion 24 is suppressed, and the influence on the processing of the substrate S due to redeposition of the processing liquid on the substrate S is suppressed.

[0067] The above-described embodiment can also be implemented in the following forms. Each form may be implemented alone or in combination with each other.

[0068] In the above embodiment, as shown in FIG. 11, the extending portion 24B of the receiving portion 24 and the insulating portion 26 may have a gradient of wettability to the processing liquid in a direction along the gravity direction so that the wettability to the processing liquid gradually increases from the upper side to the lower side in the gravity direction. The gradient of wettability to the processing liquid is provided, for example, in the extending portion 24B of the receiving portion 24, at least in a surface portion located above the upper surface of the substrate S held by the holding portion 21 in the gravity direction, among the receiving surface (inner wall surface) that serves as a surface for receiving the processing liquid scattered from the substrate S held by the holding portion 21. Here, the receiving surface is a surface provided at a position where the processing liquid scattered from the substrate S held by the holding portion 21 adheres. For example, the receiving surface is a surface provided above the upper surface of the substrate S held by the holding portion 21 in the gravity direction and outside the substrate S.

[0069] In the above embodiment, as shown in FIG. 12, the insulating portion 26 may include a first insulating portion 26A and a second insulating portion 26B having a lower wettability to the treatment liquid than the first insulating portion 26A. The first insulating portion 26A may be made of, for example, a hydrophilic material, and the second insulating portion 26B may be made of, for example, a hydrophobic material. In the example shown in the figure, the first insulating portion 26A and the second insulating portion 26B are alternately arranged in the circumferential direction centered on the center of the opening of the receiving portion 24. The first insulating portion 26A has a tapered shape in which the width in the circumferential direction centered on the center of the opening of the receiving portion 24 gradually increases from the inside to the outside in the radial direction centered on the center of the opening of the receiving portion 24. In other words, the width of the first insulating portion 26A gradually increases from the upper side to the lower side of the receiving portion 24. The second insulating portion 26B has an inverse tapered shape in which the width in the circumferential direction centered on the center of the opening of the receiving portion 24 gradually decreases from the inside to the outside in the radial direction centered on the center of the opening of the receiving portion 24. In other words, the width of the second insulating portion 26B gradually decreases from the upper side to the lower side of the receiving portion 24. As a result, a gradient of wettability to the treatment liquid is formed such that the ratio of the hydrophobic area decreases while the ratio of the hydrophilic area increases from the inside to the outside in the radial direction centered on the opening center of the receiving portion 24, and the wettability to the treatment liquid gradually increases.

[0070] In the above embodiment, as shown in FIG. 13, the insulating portion 26 may include a first insulating portion 26A and a second insulating portion 26B having higher wettability to the treatment liquid than the first insulating portion 26A. The first insulating portion 26A may be made of, for example, a hydrophilic material, and the second insulating portion 26B may be made of, for example, a hydrophobic material. In the example shown in the figure, the insulating portion 26 includes a plurality of circular second insulating portions 26B arranged radially in parallel along the radial direction from the center of the opening of the receiving portion 24, and the other area is configured as the first insulating portion 26A. The second insulating portion 26B is formed so that the size of the second insulating portion 26B gradually decreases from the inside to the outside in the radial direction from the center of the opening of the receiving portion 24. In other words, the size of the second insulating portion 26B gradually decreases from the upper side to the lower side of the receiving portion 24. This creates a gradient of wettability with respect to the processing liquid such that, from the inside to the outside in the radial direction centered on the opening center of the receiving portion 24, the proportion of hydrophobic areas decreases while the proportion of hydrophilic areas increases, and the wettability with respect to the processing liquid gradually increases.

[0071] In the above embodiment, as shown in Fig. 14, the substrate processing apparatus 10A may have an electrode unit 30 on a surface portion of the inner surface of the housing 11 corresponding to the inlet 12. For example, the electrode unit 30 may be provided above and / or below the inlet 12. This allows the processing liquid to move downwards according to gravity even if, when the substrate S held by the holder 21 rotates and the processing liquid is scattered from the substrate S, some of the scattered processing liquid adheres to the surface portion of the inner surface of the housing 11 corresponding to the inlet 12 as a receiving portion. As a result, the processing liquid is prevented from accumulating on the surface portion of the inner surface of the housing 11 corresponding to the inlet 12, and the substrate S is prevented from being contaminated by the processing liquid when the substrate S is carried in through the inlet 12.

[0072] In the above embodiment, the application of a voltage to the electrode portion 25 and the gradient of wettability of the insulating portion with respect to the treatment liquid act synergistically to promote the movement of the treatment liquid adhering to the surface of the insulating portion 26 of the receiving portion 24. Alternatively, the insulating portion 26 may not have a gradient of wettability with respect to the treatment liquid, and the movement of the treatment liquid adhering to the surface of the insulating portion 26 of the receiving portion 24 may be promoted only by the application of a voltage to the electrode portion 25.

[0073] [Note] The technical ideas that can be understood from the above-described embodiments will be described below.

[0074] [Appendix 1] A holder for holding the substrate; a supply unit that supplies a processing liquid to the substrate held by the holder; a rotation drive unit that rotates the substrate held by the holder; a receiving portion for receiving a processing liquid splashed from the substrate held by the holding portion; an electrode portion provided on a surface portion of the receiving portion that receives the treatment liquid; an insulating portion that covers an electrode surface of the electrode portion; A voltage control unit that controls a voltage applied to the electrode unit; Equipped with Substrate processing equipment. [Appendix 2] The electrode portion is A first electrode portion; A second electrode portion provided adjacent to the first electrode portion and lower than the first electrode portion in a direction of gravity; Including, The voltage control unit applies voltages to the first electrode unit and the second electrode unit at different timings. 2. The substrate processing apparatus according to claim 1. [Appendix 3] The insulating portion is A first insulating portion; a second insulating portion having a lower wettability with respect to the processing liquid than the first insulating portion; Including, 3. The substrate processing apparatus according to claim 1 or 2. [Appendix 4] the first insulating portion is made of a hydrophilic material; The second insulating portion is made of a hydrophobic material. 4. The substrate processing apparatus according to claim 3. [Appendix 5] the insulating portion has a gradient of wettability with respect to the treatment liquid in a direction along the gravity direction such that the wettability with respect to the treatment liquid gradually increases from an upper side to a lower side in the gravity direction. 5. The substrate processing apparatus according to claim 3 or 4. [Appendix 6] the gradient of wettability with respect to the treatment liquid is provided at least in a surface portion of the treatment liquid receiving surface of the receiving part that is located higher in a gravitational direction than an upper surface of the substrate held by the holding part; 6. The substrate processing apparatus according to claim 5. [Appendix 7] the first insulating portion and the second insulating portion are disposed so as to overlap each other at least partially in a direction along a receiving surface of the receiving portion for receiving the treatment liquid and in a direction along a gravity direction. 7. The substrate processing apparatus according to claim 3, [Appendix 8] the electrode portion is provided on at least a surface portion of a receiving surface of the receiving portion for receiving the treatment liquid that is located higher in a direction of gravity than an upper surface of the substrate held by the holding portion; 8. The substrate processing apparatus according to claim 1, [Appendix 9] The voltage control unit applies a voltage to the electrode unit on the condition that the substrate is held by the holding unit. 9. The substrate processing apparatus according to claim 1 , [Appendix 10] holding a substrate; supplying a processing liquid to the held substrate; rotating the held substrate; receiving a processing liquid splashed from the held substrate; a step of controlling a voltage applied to the electrode part in a state where an electrode surface of the electrode part provided on the surface portion that receives the treatment liquid is covered with an insulating part; Including, A method for processing a substrate. [Appendix 11] the substrate is a semiconductor substrate, forming a resist pattern on the substrate processed by the substrate processing apparatus according to any one of claims 1 to 9; forming a semiconductor element by processing the substrate based on the resist pattern; A method for manufacturing a semiconductor device.

[0075] The present embodiment has been described above with reference to specific examples. However, the present disclosure is not limited to these specific examples. Any design modifications made by a person skilled in the art to these specific examples are also included within the scope of the present disclosure as long as they have the features of the present disclosure. The elements of each of the above-mentioned specific examples and their arrangements, conditions, shapes, etc. are not limited to those exemplified and can be changed as appropriate. The combination of each of the elements of each of the above-mentioned specific examples can be changed as appropriate as long as no technical contradiction occurs. [Explanation of symbols]

[0076] 10...substrate processing apparatus, 11...housing, 12...inlet, 13...cover member, 20...substrate processing section, 21...holding section, 21A...shaft section, 22...supply section, 23...rotation drive section, 24...receiving section, 25...electrode section, 25A...first electrode section, 25B...second electrode section, 25C...third electrode section, 25a...first terminal section, 25b...second terminal section, 26...insulating section, 27...voltage control section, S...substrate.

Claims

1. A holder for holding the substrate; a supply unit that supplies a processing liquid to the substrate held by the holder; a rotation drive unit that rotates the substrate held by the holder; a receiving portion for receiving a processing liquid splashed from the substrate held by the holding portion; an electrode portion provided on a surface portion of the receiving portion that receives the treatment liquid; an insulating portion that covers an electrode surface of the electrode portion; A voltage control unit that controls a voltage applied to the electrode unit; Equipped with Substrate processing equipment.

2. The electrode portion is A first electrode portion; A second electrode portion provided adjacent to the first electrode portion and lower than the first electrode portion in a direction of gravity; Including, The voltage control unit applies voltages to the first electrode unit and the second electrode unit at different timings. The substrate processing apparatus according to claim 1 .

3. The insulating portion is A first insulating portion; a second insulating portion having a lower wettability with respect to the processing liquid than the first insulating portion; Including, The substrate processing apparatus according to claim 1 .

4. the first insulating portion is made of a hydrophilic material; The second insulating portion is made of a hydrophobic material. The substrate processing apparatus according to claim 3 .

5. the insulating portion has a gradient of wettability with respect to the treatment liquid in a direction along the gravity direction such that the wettability with respect to the treatment liquid gradually increases from an upper side to a lower side in the gravity direction. The substrate processing apparatus according to claim 3 .

6. the gradient of wettability with respect to the treatment liquid is provided at least in a surface portion of the treatment liquid receiving surface of the receiving part that is located higher in a gravitational direction than an upper surface of the substrate held by the holding part; The substrate processing apparatus according to claim 5 .

7. the first insulating portion and the second insulating portion are disposed so as to overlap each other at least partially in a direction along a receiving surface of the receiving portion for receiving the treatment liquid and in a direction along a gravity direction. The substrate processing apparatus according to claim 3 .

8. the electrode portion is provided on at least a surface portion of a receiving surface of the receiving portion for receiving the treatment liquid that is located higher in a gravitational direction than an upper surface of the substrate held by the holding portion; The substrate processing apparatus according to claim 1 .

9. The voltage control unit applies a voltage to the electrode unit on the condition that the substrate is held by the holding unit. The substrate processing apparatus according to claim 1 .

10. holding a substrate; supplying a processing liquid to the held substrate; rotating the held substrate; receiving a processing liquid splashed from the held substrate; a step of controlling a voltage applied to the electrode part in a state where an electrode surface of the electrode part provided on the surface portion that receives the treatment liquid is covered with an insulating part; Including, A method for processing a substrate.

11. the substrate is a semiconductor substrate, A resist pattern is formed on the substrate processed by the substrate processing apparatus according to any one of claims 1 to 9, forming a semiconductor element by processing the substrate based on the resist pattern; A method for manufacturing a semiconductor device.

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