Method for manufacturing semiconductor device

Abstract

To provide a method for manufacturing a semiconductor device, containing a step of processing a semiconductor member, having one side surface temporally fixed to a support substrate, in which the semiconductor member after the processing can be easily separated from the support substrate.SOLUTION: The present invention discloses a method for manufacturing a semiconductor device, comprising steps of: processing a semiconductor member that is temporally fixed to a support substrate; and irradiating a temporal fixing lamination body with light from a back surface side of the support substrate, and separating the semiconductor member from the support substrate. The light is sequentially radiated to a plurality of irradiated regions, and each irradiated region contains one part of a back surface. When viewing it from a direction that is vertical to the back surface, both the adjacent irradiated regions partially overlap each other, and a region where the plurality of irradiated regions are matched contains the whole back surface.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing a semiconductor device. [Background technology]

[0002] In the field of semiconductor devices, in recent years, technology related to a package called SIP (System in Package) in which multiple semiconductor elements are stacked has grown significantly. In a SIP-type package, many semiconductor elements are stacked, so that the semiconductor elements are required to be thin. For this reason, after an integrated circuit is incorporated into a semiconductor member (e.g., a semiconductor wafer), processing such as thinning by grinding the back surface of the semiconductor member and individualization by dicing the semiconductor wafer may be performed. These processing processes of semiconductor members are usually performed in a state in which the semiconductor member is temporarily fixed to a support substrate by a temporary fixing material layer (see, for example, Patent Documents 1 to 3). Patent Documents 2 and 3 disclose a method of separating a semiconductor member by irradiating a temporary fixing material layer with laser light (coherent light). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-126803 A [Patent Document 2] JP 2016-138182 A [Patent Document 3] JP 2013-033814 A Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present invention relates to a method for producing a semiconductor device, the method including a step of processing a semiconductor member temporarily fixed to a support substrate, and provides a method by which the processed semiconductor member can be easily separated from the support substrate. [Means for solving the problem]

[0005] One aspect of the present invention is A step of preparing a temporary fixing laminate including a support substrate having a support surface and a back surface opposite thereto, and a temporary fixing material layer provided on the support surface, the temporary fixing material layer having a curable resin layer including at least one outermost surface of the temporary fixing material layer; A step of temporarily fixing a semiconductor member to the supporting substrate via the temporary fixing material layer; A step of processing the semiconductor member temporarily fixed to the support substrate; a step of irradiating the temporary fixing laminate with light from the back surface side, thereby separating the semiconductor member from the support substrate; and a method for manufacturing a semiconductor device comprising the steps of: a) forming a first insulating film on a first substrate and a second insulating film on a second substrate; b) forming a first insulating film on a first substrate; c) forming a first insulating film on a second substrate; d) forming a second insulating film on a second substrate; e) forming a second insulating film on a second substrate; f) forming a second insulating film on the second substrate; and g) forming a second insulating film on the second substrate. Effect of the Invention

[0006] According to one aspect of the present invention, in relation to a method for manufacturing a semiconductor device that includes a step of processing a semiconductor member temporarily fixed to a support substrate, a method is provided in which the processed semiconductor member can be easily separated from the support substrate by a simple process. [Brief description of the drawings]

[0007] [Figure 1] 1(a), (b), and (c) are schematic diagrams showing one embodiment of a method for manufacturing a semiconductor device. [Diagram 2] 1(a) and 1(b) are schematic diagrams showing one embodiment of a method for manufacturing a semiconductor device. [Diagram 3] 1(a) and 1(b) are schematic diagrams showing one embodiment of a method for manufacturing a semiconductor device. [Figure 4]1(a), (b), and (c) are schematic diagrams showing one embodiment of a method for manufacturing a semiconductor device. [Diagram 5] FIG. 2 is a plan view showing an example of a plurality of irradiated regions. [Figure 6] FIG. 2 is a plan view showing an example of a plurality of irradiated regions. [Figure 7] FIG. 2 is a plan view showing an example of a plurality of irradiated regions. [Figure 8] FIG. 2 is a plan view showing an example of a plurality of irradiated regions. [Figure 9] FIG. 2 is a plan view showing an example of a plurality of irradiated regions. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, several embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments.

[0009] The sizes of components in each drawing referred to in this specification are conceptual, and the relative relationship of the sizes between the components is not limited to those shown in each drawing. Duplicate descriptions may be omitted.

[0010] The numerical values ​​and their ranges in this specification do not limit the scope of the present invention. In this specification, the numerical range indicated using "~" indicates a range including the numerical values ​​before and after "~" as the minimum and maximum values, respectively. In the numerical ranges described in stages in this specification, the upper limit or lower limit value described in one numerical range may be replaced with the upper limit or lower limit value of another numerical range described in stages. In the numerical ranges described in this specification, the upper limit or lower limit value of the numerical range may be replaced with the value shown in the examples.

[0011] In this specification, (meth)acrylic acid means acrylic acid or its corresponding methacrylic acid, and the same applies to other similar expressions such as (meth)acrylate and (meth)acryloyl group.

[0012] In order to manufacture a semiconductor device, a temporary fixing laminate is prepared for temporarily fixing a semiconductor member to a support substrate during processing of the semiconductor member. FIG. 1 is a cross-sectional view showing some embodiments of the temporary fixing laminate. The temporary fixing laminate 1 shown in FIG. 1 has a support substrate 10 having a main surface as a support surface S1 and a back surface S2 on the back side thereof, and a temporary fixing material layer 30 provided on the support surface S1 of the support substrate 10. The temporary fixing material layer 30 has a curable resin layer 31. The curable resin layer 31 includes an outermost surface S3 of the temporary fixing material layer 30 on the side opposite to the support substrate 10. In addition, the temporary fixing material layer 30 has a light absorbing layer 32 provided as a layer separate from the curable resin layer 31, or a light absorbing layer 31B provided as a part of the curable resin layer 31. The light absorbing layers 32 and 31B are layers that absorb light and generate heat.

[0013] 1(a) includes a curable resin layer 31 including an outermost surface S3 on the side opposite to the supporting substrate 10, and a light absorbing layer 32 provided as a layer separate from the curable resin layer 31. In other words, the light absorbing layer 32 and the curable resin layer 31 are laminated in this order on a supporting surface S1, which is one of the main surfaces of the supporting substrate 10.

[0014] 1(b), the temporary fixing material layer 30 of the temporary fixing laminate 1 is made of a curable resin layer 31 including a light absorbing layer 31B as a part thereof. The curable resin layer 31 here has a light absorbing layer 31B including an outermost surface S3, and a substantially non-heat-generating curable resin layer 31A provided on the support substrate 10 side of the light absorbing layer 31B.

[0015] 1(c), in addition to the light absorbing layer 31B similar to that in FIG. 1(b), a light absorbing layer 32 is further provided as a layer separate from the curable resin layer 31. Instead of the light absorbing layer 32 provided as a layer separate from the curable resin layer 31, a light absorbing layer constituting a part of the curable resin layer 31 may be further provided between the curable resin layer 31A and the support substrate 10.

[0016] The temporary fixing laminate 1 can be obtained, for example, by sequentially forming each layer on a supporting substrate 10. A laminate film having a curable resin layer and a light absorbing layer may be prepared and laminated on the supporting substrate 10.

[0017] 2, 3 and 4 are process diagrams showing an embodiment of a method for manufacturing a semiconductor device using a temporary fixing laminate. Here, a method using the temporary fixing laminate 1 of FIG. 1(a) is exemplified, but a semiconductor device can also be manufactured using a temporary fixing laminate of another configuration. The method shown in FIGS. 2 to 4 includes a step of temporarily fixing a semiconductor member 45 to a support substrate 10 via a temporary fixing material layer 30 (FIG. 2), a step of processing the semiconductor member 45 temporarily fixed to the support substrate 10 (FIG. 3(a)), a step of forming a sealing layer 50 that seals the processed semiconductor member 45 (FIG. 3(b)), and a step of irradiating the temporary fixing laminate 1 with light hν from the support substrate 10 side, thereby separating the semiconductor member 45 from the support substrate 10 (FIG. 4(b)). The semiconductor member 45 has a semiconductor substrate 40 and a rewiring layer 41 provided on one surface side of the semiconductor substrate 40. The semiconductor member 45 may be disposed on the curable resin layer 31 in an orientation in which the rewiring layer 41 is located on the curable resin layer 31 side.

[0018] The support substrate 10 is a plate-like body that has high transmittance and can withstand the load applied during processing of the semiconductor member 45. Examples of the support substrate 10 include an inorganic glass substrate and a transparent resin substrate.

[0019] The thickness of the support substrate 10 may be, for example, 0.1 to 2.0 mm. If the thickness of the support substrate 10 is 0.1 mm or more, handling tends to be easy. If the thickness of the support substrate 10 is 2.0 mm or less, material costs tend to be reduced.

[0020] The outermost surface S3 of the temporary fixing material layer 30 on which the semiconductor member 45 is temporarily fixed is the surface of the curable resin layer 31. For example, the semiconductor member 45 can be temporarily fixed to the support substrate 10 by curing the curable resin layer 31 with the semiconductor member 45 placed on it. In other words, the semiconductor member 45 can be temporarily adhered to the support substrate 10 via the temporary fixing material layer 30 having the cured curable resin layer 31c.

[0021] The curable resin layer 31 is a layer containing a curable resin composition that is cured by heat or light. The curable resin layer 31 before curing has adhesiveness (or stickiness) to such an extent that the semiconductor member 45 can be attached by pressure bonding or the like. The cured curable resin layer 31c holds the semiconductor member 45 to be processed. In this specification, all components other than the conductive particles constituting the curable resin layer 31 are considered to be components of the curable resin composition.

[0022] From the viewpoint of stress relaxation, the thickness of the curable resin layer 31 may be, for example, 2000 μm or less, 500 μm or less, or 200 μm or less, or may be 0.1 μm or more, or 1 μm or more.

[0023] The storage modulus of the cured curable resin layer 31c at 25°C may be 5 to 100 MPa. When the storage modulus of the cured curable resin layer 31c at 25°C is 5 MPa or more, the support substrate 10 is likely to hold the semiconductor member 45 without bending. In addition, when the semiconductor member 45 is separated from the support substrate, the curable resin layer 31c is unlikely to leave a residue on the semiconductor member 45. When the storage modulus of the cured curable resin layer 31c at 25°C is 100 MPa or less, the positional deviation of the semiconductor member 45 tends to be reduced. From the same viewpoint, the storage modulus of the cured curable resin layer 31c at 25°C may be 5.5 MPa or more, 6.0 MPa or more, or 6.3 MPa or more, or may be 90 MPa or less, 80 MPa or less, 70 MPa or less, or 65 MPa or less. In this specification, the storage modulus of the cured curable resin layer 31c means a value determined by viscoelasticity measurement under conditions of a temperature rise rate of 5° C. / min, a frequency of 1 Hz, and a tensile mode.

[0024] The storage modulus of the cured curable resin layer 31c at 25°C can be increased, for example, by increasing the content of the hydrocarbon resin described below, by applying a hydrocarbon resin having a high Tg, or by adding an insulating filler to the curable resin composition.

[0025] The storage modulus of the cured curable resin layer 31c at 250°C may be 0.70 MPa or more, 0.80 MPa or more, 0.85 MPa or more, or 0.90 MPa or more, or may be 2.00 MPa or less, 1.90 MPa or less, 1.80 MPa or less, or 1.75 MPa or less.

[0026] The curable resin composition constituting the curable resin layer 31 may contain a thermosetting resin and a hydrocarbon resin. The hydrocarbon resin is a resin whose main skeleton is composed of a hydrocarbon. When the curable resin composition contains a hydrocarbon resin, the semiconductor member 45 can be easily attached to the curable resin layer 31 at a low temperature.

[0027] From the viewpoint of the application property of the curable resin layer 31 at low temperatures, the glass transition temperature (Tg) of the hydrocarbon resin may be 50° C. or lower. From the viewpoint of good releasability of the curable resin layer 31, the Tg of the hydrocarbon resin may be −100° C. or higher, or −50° C. or higher.

[0028] The Tg of a hydrocarbon resin is a midpoint glass transition temperature obtained by differential scanning calorimetry (DSC). Specifically, the Tg of a hydrocarbon resin is a midpoint glass transition temperature calculated by a method in accordance with JIS K 7121 after measuring the change in heat quantity under conditions of a temperature rise rate of 10°C / min and a measurement temperature of -80 to 80°C.

[0029] The hydrocarbon resin includes at least one selected from the group consisting of, for example, ethylene-propylene copolymer, ethylene-1-butene copolymer, ethylene-propylene-1-butene copolymer elastomer, ethylene-1-hexene copolymer, ethylene-1-octene copolymer, ethylene-styrene copolymer, ethylene-norbornene copolymer, propylene-1-butene copolymer, ethylene-propylene-non-conjugated diene copolymer, ethylene-1-butene-non-conjugated diene copolymer, ethylene-propylene-1-butene-non-conjugated diene copolymer, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymer (SBS), styrene-isoprene-styrene block copolymer (SIS), styrene-ethylene-butylene-styrene block copolymer (SEBS), styrene-ethylene-propylene-styrene block copolymer (SEPS), and hydrogenated products thereof. These hydrocarbon resins may have a carboxyl group. The carboxyl group is introduced by modification using, for example, maleic anhydride or the like. The hydrocarbon resin may include a styrene-based resin including monomer units derived from styrene. The styrene-based resin may be a styrene-ethylene-butylene-styrene block copolymer (SEBS).

[0030] The weight-average molecular weight (Mw) of the hydrocarbon resin may be 10,000 to 5,000,000 or 100,000 to 2,000,000. When the weight-average molecular weight is 10,000 or more, the heat resistance of the temporary fixing material layer 30 tends to be easily ensured. When the weight-average molecular weight is 5,000,000 or less, the decrease in flow and adhesion of the temporary fixing material layer 30 tends to be easily suppressed. The weight-average molecular weight here is a polystyrene-equivalent value obtained by using a calibration curve of standard polystyrene in gel permeation chromatography (GPC).

[0031] The content of the hydrocarbon resin may be 40 parts by mass or more, 50 parts by mass or more, or 60 parts by mass or more, and may be 90 parts by mass or less, 85 parts by mass or less, or 80 parts by mass or less, relative to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31. When the content of the hydrocarbon resin is within these numerical ranges, it tends to be easy to form a thin and flat curable resin layer 31. In addition, the curable resin layer 31 tends to have good pressure-sensitive adhesion at low temperatures and an appropriate storage modulus after curing.

[0032] The thermosetting resin is a component that cures the curable resin composition by a thermosetting reaction. The thermosetting reaction can be a reaction between a thermosetting resin and a curing agent, self-polymerization of the thermosetting resin, or a combination thereof. Examples of the thermosetting resin include epoxy resin, acrylic resin, silicone resin, phenolic resin, thermosetting polyimide resin, polyurethane resin, melamine resin, and urea resin. These may be used alone or in combination of two or more. The thermosetting resin may contain an epoxy resin because it is more excellent in heat resistance, workability, and reliability.

[0033] An epoxy resin is a compound having one or more epoxy groups. An epoxy resin may have two or more epoxy groups. Examples of epoxy resins having two or more epoxy groups include bisphenol A type epoxy resins, novolac type epoxy resins (phenol novolac type epoxy resins, etc.), glycidylamine type epoxy resins, heterocycle-containing epoxy resins, and alicyclic epoxy resins.

[0034] The curable resin composition may contain a thermosetting resin and a curing agent thereof. The total content of the thermosetting resin and the curing agent thereof may be 10 parts by mass or more, 15 parts by mass or more, or 20 parts by mass or more, and 60 parts by mass or less, 50 parts by mass or less, or 40 parts by mass or less, relative to 100 parts by mass of the total mass of the curable resin composition. When the total content of the thermosetting resin and the curing agent thereof is within these ranges, a thin and flat curable resin layer tends to be easily formed, and the heat resistance of the cured curable resin layer 31c tends to be more excellent.

[0035] When an epoxy resin is used as the thermosetting resin, the curable resin composition may contain a curing agent for the epoxy resin. The curing agent for the epoxy resin is not particularly limited, but examples thereof include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols (such as bisphenol A, bisphenol F, and bisphenol S), and phenolic resins (such as phenol novolac resins, bisphenol A novolac resins, cresol novolac resins, and phenol aralkyl resins).

[0036] The thermosetting resin composition may further contain a curing accelerator that accelerates the curing reaction of a thermosetting resin such as an epoxy resin. Examples of the curing accelerator include imidazole compounds, dicyandiamide, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate. These may be used alone or in combination of two or more.

[0037] The content of the curing accelerator may be 0.01 to 5 parts by mass relative to 100 parts by mass of the total amount of the thermosetting resin and the curing agent. When the content of the curing accelerator is within this range, the curability of the curable resin layer and the heat resistance after curing tend to be more excellent.

[0038] The curable resin composition constituting the curable resin layer 31 may contain a polymerizable monomer having a polymerizable unsaturated group and a polymerization initiator. In this case, the curable resin composition may further contain the above-mentioned hydrocarbon resin.

[0039] The polymerizable monomer is a compound having a polymerizable unsaturated group such as an ethylenically unsaturated group. The polymerizable monomer may be monofunctional, bifunctional, or trifunctional or more, but from the viewpoint of obtaining sufficient curability, a bifunctional or more polymerizable monomer may be used. Examples of the polymerizable monomer include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinylpyridine, vinylamide, and arylated vinyl. The polymerizable monomer may be (meth)acrylate or (meth)acrylic acid. The (meth)acrylate may be a monofunctional (meth)acrylate, a bifunctional (meth)acrylate, a trifunctional or more polyfunctional (meth)acrylate, or a combination thereof.

[0040] Examples of monofunctional (meth)acrylates include methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, butoxyethyl (meth)acrylate, isoamyl (meth)acrylate, hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, heptyl (meth)acrylate, octylheptyl (meth)acrylate, nonyl (meth)acrylate, and decyl (meth)acrylate. 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-chloro-2-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, methoxypolyethylene glycol (meth)acrylate, ethoxypolyethylene glycol (meth)acrylate, methoxypolypropylene glycol (meth)acrylate, ethoxypolypropylene glycol (meth)acrylate, and mono(2-(meth)acryloyloxyethyl)succinate, etc. aliphatic (meth)acrylates of the above; as well as benzyl (meth)acrylate, phenyl (meth)acrylate, o-biphenyl (meth)acrylate, 1-naphthyl (meth)acrylate, 2-naphthyl (meth)acrylate, phenoxyethyl (meth)acrylate, p-cumylphenoxyethyl (meth)acrylate, o-phenylphenoxyethyl (meth)acrylate, 1-naphthoxyethyl (meth)acrylate, 2-naphthoxyethyl (meth)acrylate, phenoxypolyethylene glycol (meth)acrylate, nonylphenoxy polyethylene glycol (meth)acrylate, phenoxy polypropylene glycol (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-(o-phenylphenoxy)propyl (meth)acrylate, 2-hydroxy-3-(1-naphthoxy)propyl (meth)acrylate, and aromatic (meth)acrylates such as 2-hydroxy-3-(2-naphthoxy)propyl (meth)acrylate.

[0041] Examples of bifunctional (meth)acrylates include ethylene glycol di(meth)acrylate, diethylene glycol di(meth)acrylate, triethylene glycol di(meth)acrylate, tetraethylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, dipropylene glycol di(meth)acrylate, tripropylene glycol di(meth)acrylate, tetrapropylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ethoxylated polypropylene glycol di(meth)acrylate, 1,3-butanediol di(meth)acrylate, 1,4-butanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate, 3-methyl-1,5-pentanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, 2-butyl-2-ethyl-1,3-propane Aliphatic (meth)acrylates such as diol di(meth)acrylate, 1,9-nonanediol di(meth)acrylate, 1,10-decanediol di(meth)acrylate, glycerin di(meth)acrylate, tricyclodecane dimethanol (meth)acrylate, and ethoxylated 2-methyl-1,3-propanediol di(meth)acrylate; as well as ethoxylated bisphenol A di(meth)acrylate, propoxylated bisphenol A di(meth)acrylate, Examples of aromatic (meth)acrylates include ethoxylated propoxylated bisphenol A di(meth)acrylate, ethoxylated bisphenol F di(meth)acrylate, propoxylated bisphenol F di(meth)acrylate, ethoxylated propoxylated bisphenol F di(meth)acrylate, ethoxylated fluorene type di(meth)acrylate, propoxylated fluorene type di(meth)acrylate, and ethoxylated propoxylated fluorene type di(meth)acrylate.

[0042] Examples of the polyfunctional (meth)acrylate having three or more functional groups include trimethylolpropane tri(meth)acrylate, ethoxylated trimethylolpropane tri(meth)acrylate, propoxylated trimethylolpropane tri(meth)acrylate, ethoxylated propoxylated trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, ethoxylated pentaerythritol tri(meth)acrylate, propoxylated pentaerythritol tri(meth)acrylate, ethoxylated propoxylated pentaerythritol tri(meth)acrylate, ... Aliphatic (meth)acrylates such as erythritol tetra(meth)acrylate, ethoxylated pentaerythritol tetra(meth)acrylate, propoxylated pentaerythritol tetra(meth)acrylate, ethoxylated propoxylated pentaerythritol tetra(meth)acrylate, ditrimethylolpropane tetraacrylate, and dipentaerythritol hexa(meth)acrylate; and aromatic epoxy (meth)acrylates such as phenol novolac type epoxy (meth)acrylate and cresol novolac type epoxy (meth)acrylate.

[0043] These (meth)acrylates may be used alone or in combination of two or more thereof. These (meth)acrylates may be combined with other polymerizable monomers.

[0044] The content of the polymerizable monomer may be 10 to 60 parts by mass with respect to 100 parts by mass of the curable resin composition constituting the curable resin layer 31.

[0045] The polymerization initiator is a compound that initiates a polymerization reaction of a polymerizable monomer by heating or irradiation with ultraviolet light, etc. For example, when the polymerizable monomer is a compound having an ethylenically unsaturated group, the polymerization initiator may be a thermal radical polymerization initiator, a photoradical polymerization initiator, or a combination thereof.

[0046] Examples of the thermal radical polymerization initiator include diacyl peroxides such as octanoyl peroxide, lauroyl peroxide, stearyl peroxide, and benzoyl peroxide; t-butyl peroxypivalate, t-hexyl peroxypivalate, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t-hexylperoxyisopropyl monocarbonate, and t-butylperoxyisopropyl per ... peroxyesters such as 2,5-dimethyl-2,5-bis(benzoylperoxy)hexane, t-butylperoxyacetate, etc.; and azo compounds such as 2,2'-azobisisobutyronitrile, 2,2'-azobis(2,4-dimethylvaleronitrile), 2,2'-azobis(4-methoxy-2'-dimethylvaleronitrile).

[0047] Examples of the photoradical polymerization initiator include benzoin ketals such as 2,2-dimethoxy-1,2-diphenylethan-1-one; α-hydroxyketones such as 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenylpropan-1-one, and 1-[4-(2-hydroxyethoxy)phenyl]-2-hydroxy-2-methyl-1-propan-1-one; and phosphine oxides such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide, bis(2,6-dimethoxybenzoyl)-2,4,4-trimethylpentylphosphine oxide, and 2,4,6-trimethylbenzoyldiphenylphosphine oxide.

[0048] These thermal and photoradical polymerization initiators may be used alone or in combination of two or more.

[0049] The content of the polymerization initiator may be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total amount of the polymerizable monomers.

[0050] The curable resin composition constituting the curable resin layer 31 may further contain, as other components, an insulating filler, a sensitizer, an antioxidant, and the like.

[0051] The insulating filler is added to the curable resin composition for the purpose of imparting low thermal expansion and low moisture absorption. Examples of the insulating filler include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramic. These insulating fillers may be used alone or in combination of two or more.

[0052] The content of the insulating filler may be 5 to 20 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31. When the content of the insulating filler is within this numerical range, the cured curable resin layer 31c tends to have excellent heat resistance and good releasability.

[0053] Examples of the sensitizer include anthracene, phenanthrene, chrysene, benzopyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthen-9-one, 2-isopropyl-9H-thioxanthen-9-one, 4-isopropyl-9H-thioxanthen-9-one, and 1-chloro-4-propoxythioxanthone. The content of the sensitizer may be 0.01 to 10 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

[0054] Examples of the antioxidant include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives such as 4-methoxyphenol and 4-t-butylcatechol, aminoxyl derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate. The content of the antioxidant may be 0.1 to 10 parts by mass with respect to 100 parts by mass of the total mass of the curable resin composition constituting the curable resin layer 31.

[0055] The curable resin layer 31 is provided on the light absorbing layer 32, for example, by preparing a laminated film having a support film and a curable resin layer formed on the support film in advance and attaching the laminated film to the light absorbing layer 32. The laminated film can be attached to the light absorbing layer 32 at room temperature (20°C) or while heating, using a roll laminator, vacuum laminator, or the like. The laminated film having the support film and the curable resin layer can be obtained, for example, by a method including coating the support film with a resin varnish containing a thermosetting resin or a polymerizable monomer, an organic solvent, and other components as necessary, and removing the organic solvent from the coating film. Alternatively, the curable resin layer 31 may be formed on the light absorbing layer 32 by a method of directly coating the light absorbing layer 32 with a similar resin varnish and removing the organic solvent from the coating film.

[0056] The light absorbing layer 32 is a layer that absorbs light and generates heat. One example of the light absorbing layer 32 is a conductor layer that includes a conductor that absorbs light and generates heat. Examples of conductors that constitute the conductor layer as the light absorbing layer 32 include metals, metal oxides, and conductive carbon materials. The metals may be simple metals such as chromium, copper, titanium, silver, platinum, and gold, or alloys such as nickel-chromium, stainless steel, and copper-zinc. Examples of metal oxides include indium tin oxide (ITO), zinc oxide, and niobium oxide. These may be used alone or in combination of two or more. The conductor may be chromium, titanium, or a conductive carbon material.

[0057] The light absorbing layer 32 may be a metal layer consisting of a single layer or multiple layers. For example, the light absorbing layer 32 may be a metal layer consisting of a copper layer and a titanium layer. The metal layer as the light absorbing layer 32 may be a layer formed by physical vapor deposition (PVD) such as vacuum deposition and sputtering, chemical vapor deposition (CVD) such as plasma-enhanced chemical vapor deposition, or a plating layer formed by electrolytic plating or electroless plating. By physical vapor deposition, even if the support substrate 10 has a large area, a metal layer as the light absorbing layer 32 that covers the surface of the support substrate 10 can be efficiently formed.

[0058] Another example of the light absorbing layer is a layer containing conductive particles that absorb light and generate heat, and a binder resin in which the conductive particles are dispersed. The conductive particles may be particles containing the above-mentioned conductor. The binder resin may be a curable resin composition, in which case the light absorbing layer constitutes a part of the curable resin layer 31. For example, the light absorbing layer 31B in the temporary fixing laminate 1 of FIG. 1(b) can be a layer containing conductive particles and a curable resin composition. The curable resin composition constituting the light absorbing layer may contain the same components as the curable resin composition constituting the curable resin layer of the part other than the light absorbing layer. The curable resin composition constituting the light absorbing layer may be the same as or different from the curable resin composition constituting the curable resin layer of the part other than the light absorbing layer. The content of the conductive particles in the light absorbing layer may be 10 to 90 parts by mass relative to the total amount of the components other than the conductive particles in the light absorbing layer, that is, 100 parts by mass of the binder resin or the curable resin composition.

[0059] The light absorbing layer containing conductive particles and a binder resin can be formed by a method including, for example, applying a varnish containing conductive particles, a binder resin, and an organic solvent onto a supporting substrate or a curable resin layer, and removing the organic solvent from the coating. A prefabricated light absorbing layer 32 may be laminated onto the supporting substrate 10 or the curable resin layer. A laminate consisting of a light absorbing layer and a curable resin layer may be laminated onto the supporting substrate.

[0060] From the viewpoint of easy peelability, the thickness of the light absorbing layer 32 may be 1 to 5000 nm or 100 to 3000 nm. When the thickness of the light absorbing layer 32 is 50 to 300 nm, the light absorbing layer 32 tends to have a sufficiently low transmittance.

[0061] The thickness of the temporary fixing material layer 30 (in the case of FIG. 1(a), the total thickness of the light absorbing layer 32 and the curable resin layer 31) may be 0.1 to 2000 μm or 10 to 500 μm from the viewpoint of stress relaxation.

[0062] After preparing the temporary fixing laminate 1, as shown in FIG. 2(a), an unprocessed semiconductor member 45 is placed on the curable resin layer 31. The semiconductor member 45 has a semiconductor substrate 40 and a rewiring layer 41. The semiconductor member 45 may further have an external connection terminal. The semiconductor substrate 40 may be a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. In the example of FIG. 2(a), a plurality of semiconductor members 45 are placed on the curable resin layer 31, but the number of semiconductor members may be one. For example, a semiconductor member having one semiconductor wafer as a semiconductor substrate may be placed on the curable resin layer of one temporary fixing laminate.

[0063] The thickness of the semiconductor member 45 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm from the viewpoint of preventing cracks during transportation, processing, and the like, in addition to making the semiconductor device smaller and thinner.

[0064] The semiconductor member 45 placed on the curable resin layer 31 is pressure-bonded to the curable resin layer 31 using, for example, a vacuum press or a vacuum laminator. When using a vacuum press, the pressure-bonding conditions can be an atmospheric pressure of 1 hPa or less, a pressure-bonding pressure of 1 MPa, a pressure-bonding temperature of 120 to 200°C, and a holding time of 100 to 300 seconds. When using a vacuum laminator, the pressure-bonding conditions can be, for example, an atmospheric pressure of 1 hPa or less, a pressure-bonding temperature of 60 to 180°C or 80 to 150°C, a lamination pressure of 0.01 to 0.5 MPa or 0.1 to 0.5 MPa, and a holding time of 1 to 600 seconds or 30 to 300 seconds.

[0065] After the semiconductor member 45 is disposed on the curable resin layer 31, the curable resin layer 31 is thermally cured or photocured, whereby the semiconductor member 45 is temporarily fixed to the support substrate 10 via the temporary fixing material layer 30 having the cured curable resin layer 31c. The thermal curing conditions may be, for example, 300° C. or lower or 100 to 200° C., and 1 to 180 minutes or 1 to 60 minutes.

[0066] Next, as shown in Fig. 3(a), the semiconductor member temporarily fixed to the support substrate 10 is processed. Fig. 3(a) shows an example of processing including thinning of the semiconductor substrate. The processing of the semiconductor member is not limited thereto, and may include, for example, thinning of the semiconductor substrate, division (dicing) of the semiconductor member, formation of a through electrode, etching, plating reflow processing, sputtering, or a combination thereof.

[0067] The semiconductor substrate 40 is thinned by using a grinder or the like to grind the surface of the semiconductor substrate 40 opposite to the rewiring layer 41. The thinned semiconductor substrate 40 may have a thickness of, for example, 100 μm or less.

[0068] After processing the semiconductor member 45, as shown in FIG. 3(b), an encapsulation layer 50 may be formed to encapsulate the processed semiconductor member 45. The encapsulation layer 50 may be formed using an encapsulant that is usually used for manufacturing semiconductor elements. For example, the encapsulation layer 50 may be formed from a thermosetting resin composition. The thermosetting resin composition used for the encapsulation layer 50 includes, for example, an epoxy resin such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, naphthol novolac epoxy resin, etc. The encapsulation layer 50 and the thermosetting resin composition for forming it may include additives such as a filler and / or a flame retardant.

[0069] The sealing layer 50 is formed using, for example, a solid material, a liquid material, a fine-particle material, or a sealing film. When a sealing film is used, a compression sealing molding machine, a vacuum laminating device, or the like is used. For example, using these devices, the semiconductor member 45 is covered with a sealing film that is thermally melted under conditions of 40 to 180°C (or 60 to 150°C), 0.1 to 10 MPa (or 0.5 to 8 MPa), and 0.5 to 10 minutes, to form the sealing layer 50. The thickness of the sealing film is adjusted so that the sealing layer 50 has a thickness equal to or greater than that of the semiconductor member 45 after processing. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

[0070] After the sealing layer 50 is formed, the sealing layer 50 and the curable resin layer 31c may be divided into a plurality of parts, each including one semiconductor member 45, as shown in FIG. 4(a).

[0071] As shown in FIG. 4(b), the temporary fixing laminate 1 is irradiated with light hν from the support substrate 10 side, thereby separating the semiconductor member 45 from the support substrate 10. By irradiating the light hν, the light absorbing layer 32 absorbs the light and generates heat instantaneously. The generated heat may cause, for example, melting of the cured curable resin layer 31c, thermal stress occurring between the support substrate 10 and the semiconductor member 45, and scattering of the light absorbing layer 32. One or more of these phenomena may be the main cause, and the semiconductor member 45 may be easily separated from the support substrate 10. When the curable resin composition constituting the curable resin layer 31 contains a hydrocarbon resin and the storage modulus of the cured curable resin layer at 25° C. is 5 to 100 MPa, peeling tends to occur easily at the interface between the light absorbing layer 32 and the cured curable resin layer 31. This tendency is observed when the energy amount of the light hν is 1 to 50 J / cm 2 In order to separate the semiconductor member 45 from the support substrate 10, a slight stress may be applied to the semiconductor member 45 along with the irradiation with the light hν.

[0072] In a method according to an embodiment, light hν is sequentially irradiated to a plurality of irradiated regions including the rear surface S2 of the support substrate 10. FIG. 5 is a plan view showing an example of a plurality of irradiated regions. In the embodiment of FIG. 5, the light hν is irradiated once to each of three irradiated regions X1, X2, and X3 arranged in series along a certain direction, each of which includes a part of the rear surface S2. When the light hν is a pulsed light, one light irradiation may include one pulsed light or two or more pulsed lights. The plurality of irradiated regions X1, X2, and X3 are arranged such that, when viewed from a direction perpendicular to the rear surface, adjacent irradiated regions partially overlap each other, and the region X, which is the sum of the plurality of irradiated regions X1, X2, and X3, includes the entire rear surface S2.

[0073] In the case of FIG. 5, an end including an end Y1 of the irradiated region X1 overlaps with an end including an end Y2 of the irradiated region X2. The ends of the adjacent irradiated regions overlap with each other at portions located directly above the back surface S2, so that the light hν is irradiated to the portions of the back surface S2 located at the ends of each irradiated region two or more times. As a result, even if the back surface S2 has a large area, it is considered that the semiconductor member 45 can be easily peeled off from the support substrate 10. Even when the entire irradiated region is irradiated with light of substantially uniform intensity, the semiconductor member 45 may be difficult to peel off from the support substrate 10. The present inventors presume that this is because the energy of the irradiated light is easily diffused at the ends of the irradiated region.

[0074] The width W1 of the overlapping portion of adjacent irradiated regions may be within a range in which the semiconductor member 45 can be appropriately peeled off, and may be, for example, 0.05 cm or more, or 0.1 cm or more, or 1000 cm or less. The ratio of the width W1 to the width W0 of the irradiated region may be 0.05 or more, or 0.1 or more, or 0.9 or less. The widths W0 and W1 here refer to the maximum widths of the irradiated region and the overlapping portion in a direction perpendicular to the outer periphery of the irradiated region, respectively.

[0075] The shape of the irradiated region is not particularly limited, but may be, for example, a rectangle as shown in FIG. 5. For example, when a light source (e.g., a lamp) having a light emitting surface is used, the region obtained by vertically projecting the light emitting surface onto a plane including the rear surface S2 can be regarded as the irradiated region. The light source may be a lamp having a light emitting surface that supplies light of substantially uniform intensity (amount of energy) to the entirety of each irradiated region. To this end, for example, the amount of light energy [J / cm2] on the entirety of the light emitting surface of the lamp may be determined. 2 ] may be within the range of the overall average value ±5.0%.

[0076] The area of ​​the back surface S2 of the support substrate 10 is 100 mm 2 or more, or 400mm 2 It may be more than 1,000,000 mm 2 Even if the area of ​​the rear surface S2 of the support substrate 10 is large, the light irradiation method according to the present embodiment makes it possible to easily peel off the semiconductor member. Damage to the support substrate 10 is also suppressed.

[0077] By moving the position of the light source relative to the support substrate 10, the light hν can be sequentially irradiated to a plurality of irradiated regions. The support substrate 10 may be moved while the light source is fixed. Alternatively, the light source may be moved while the support substrate 10 is fixed. In the case of the embodiment of FIG. 5, the position of the light source relative to the support substrate 10 is intermittently moved between positions corresponding to the irradiated regions X1, X2, and X3, respectively, and the light hν is irradiated while the light source is stopped relative to the support substrate 10. The order in which the irradiated regions are irradiated with the light is arbitrary.

[0078] The number, size, position, and other configurations of the multiple irradiated regions are not limited to the configuration of FIG. 5, and may be set so that the combined area of ​​the multiple irradiated regions includes the entire back surface S2, and light is irradiated two or more times to the end of each irradiated region including the back surface S2. FIGS. 6, 7, and 8 are plan views showing other examples of multiple irradiated regions. In FIG. 6, instead of showing irradiated regions other than the irradiated region X1 to which the first light is irradiated, centers C1, C2, C3, and C4 of each irradiated region are shown. Arrow Z indicates the moving direction of the position of the light source relative to the support substrate 10 (i.e., the irradiated region). A similar illustration method is also applied to FIGS. 7 and 8. In the example of FIG. 6, light is irradiated four times in a clockwise order to four irradiated regions including the back surface S2 of the support substrate 10. In the example of FIG. 7, light is irradiated nine times in a clockwise order to nine irradiated regions including the back surface S2 of the support substrate 10. The last irradiated region includes the center of the back surface S2. In the example of FIG. 8, starting from a first irradiated region X1 including the center of the rear surface S2, light is irradiated nine times in a clockwise order to nine irradiated regions including the rear surface S2 of the support substrate 10.

[0079] As in the example of FIG. 9, the light hν may be sequentially irradiated to a plurality of irradiated regions by rotating the support substrate with the light source fixed. In the embodiment of FIG. 9, the light hν is irradiated by a light source fixed to the upper part of the circular back surface S2 of the support substrate 10. After the light hν is irradiated to the first irradiated region X1, the light hν is irradiated once each to the irradiated regions X2, X3, X4, X5, X6, X7, and X8 in order while rotating the support substrate 10 in a clockwise rotation direction CW by 45° each. Each of the eight irradiated regions X1 to X8 includes a part of the back surface S2. The rotation angle of the support substrate 10 once is not limited to 45°, and can be changed to any angle such that the combined region of the plurality of irradiated regions includes the entire back surface S2. The rotation direction may be counterclockwise. The method of rotating the support substrate 10 is advantageous in that the moving distance of the support substrate 10 or the light source is smaller than, for example, a method of moving the support substrate 10 or the light source linearly. This method is particularly easily applicable when the rear surface S2 of the support substrate 10 is circular.

[0080] The light hν can be incoherent light or coherent light such as laser light. Incoherent light is electromagnetic wave that is not coherent and has properties such as no interference fringes, low coherence, and low directivity. Incoherent light tends to attenuate as the optical path length increases. Laser light is generally coherent light, whereas sunlight, fluorescent light, and other light are incoherent light. Incoherent light can be said to be light other than laser light. In the method of the present embodiment, even if incoherent light with a relatively small amount of energy is used, the semiconductor member after processing can be easily separated from the support substrate. By using incoherent light with a small amount of energy, damage to fine structures such as the rewiring layer of the semiconductor member can be suppressed. The irradiation area of ​​incoherent light is generally overwhelmingly larger than that of coherent light (i.e., laser light), so it is possible to reduce the number of irradiations.

[0081] The light hν may include infrared light. The light hν may be pulsed light. When the light hν is incoherent light, its light source may be, but is not limited to, a xenon lamp. A xenon lamp is a lamp that uses light emission by application and discharge in an arc tube filled with xenon gas. A xenon lamp discharges while repeating ionization and excitation, so it has a stable continuous wavelength from the ultraviolet light region to the infrared light region. Since a xenon lamp requires a short time to start up compared to lamps such as metal halide lamps, the time required for the process can be significantly reduced. Since a high voltage needs to be applied to emit light, high heat is generated instantaneously, but a xenon lamp is also advantageous in that it requires a short cooling time and allows continuous work.

[0082] The irradiation conditions of the xenon lamp include the applied voltage, pulse width, irradiation time, irradiation distance (the distance between the light source and the temporary fixing material layer), irradiation energy, etc., and these can be set arbitrarily depending on the number of irradiations, etc.

[0083] A part of the curable resin layer 31c may adhere to the separated semiconductor member 45 as a residue 31c'. The adhered residue 31c' is removed as shown in FIG. 4(c). The residue 31c' is removed, for example, by washing with a solvent. The solvent is not particularly limited, and examples thereof include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, and hexane. These may be used alone or in combination of two or more. In order to remove the residue 31c', the semiconductor member 45 may be immersed in a solvent or ultrasonically washed. The semiconductor member 45 may be heated at a low temperature of about 100° C. or less.

[0084] By the method exemplified above, a semiconductor element 60 including a processed semiconductor member 45 can be obtained. A semiconductor device can be manufactured by connecting the obtained semiconductor element 60 to another semiconductor element or a semiconductor element mounting board. EXAMPLES

[0085] The present invention will be described in more detail below with reference to examples, although the present invention is not limited to these examples.

[0086] 1. Preparation of laminate for temporary fixing 1-1. Curable resin layer A hydrogenated styrene-butadiene elastomer (product name: Dynaron 2324P, JSR Corporation) was dissolved in toluene to prepare an elastomer solution with a concentration of 40% by mass. A resin varnish was obtained by mixing the elastomer solution containing 80 parts by mass of hydrogenated styrene-butadiene elastomer with 20 parts by mass of 1,9-nonanediol diacrylate (product name: FA-129AS, Hitachi Chemical Co., Ltd.) and 1 part by mass of peroxyester (product name: Perhexa 25O, NOF Corporation).

[0087] The obtained resin varnish was applied to a release-treated surface of a polyethylene terephthalate (PET) film (Purex A31, Teijin DuPont Films Ltd., thickness: 38 μm) using a precision coater. The coating was dried by heating at 80° C. for 10 minutes to form a curable resin layer with a thickness of about 100 μm.

[0088] 1-2. Light absorption layer A rectangular glass slide having a size of 110×110 mm was prepared as a support substrate. A titanium layer and a copper layer were formed in this order on the prepared glass slide by sputtering to form a two-layered light absorbing layer of titanium layer (thickness: 20 nm) / copper layer (thickness: 200 nm). In the sputtering, after pretreatment by reverse sputtering, the titanium layer and the copper layer were formed by RF sputtering.

[0089] 1-3. Temporary fixing laminate A curable resin layer cut to a size of 100 × 100 mm was placed on the light absorbing layer formed on the slide glass. The curable resin layer was attached to the light absorbing layer by vacuum lamination to obtain a laminate for temporary fixing having a laminated structure of a support substrate / light absorbing layer / curable resin layer.

[0090] 2. Peel test Working Example A semiconductor chip (size: 100 mm x 100 mm) was placed on the curable resin layer of the temporary fixing laminate. The curable resin layer was cured by heating at 180°C for 1 hour to obtain a specimen for a peel test having a semiconductor chip temporarily fixed to a support substrate.

[0091] From the supporting substrate side of the temporary fixing laminate, three irradiated regions including the rear surface of the supporting substrate were irradiated with pulsed light by a xenon lamp. The ends of adjacent irradiated regions overlapped each other, and the width W1 of the overlapping portion was 0.75 cm. As the xenon lamp, PulseForge (registered trademark) 1300 manufactured by NovaCentrix was used. This xenon lamp has a light emitting surface having a size of 150 mm x 75 mm and emitting substantially uniform light. The wavelength range of the emitted light is 200 nm to 1500 nm. Each irradiated region was irradiated with one pulsed light with an applied voltage of 800 V and a pulse width of 250 μs. The energy amount of each irradiated pulsed light was 3.4 J / cm 2 It was.

[0092] By irradiating the three irradiated areas with light, the semiconductor chip peeled off without cracking the glass slide.

[0093] Comparative Example From the slide glass side of the same temporary fixing laminate as in the example, two irradiated areas that are in contact with each other so that the ends do not overlap at the center of the back surface of the slide glass were irradiated with pulsed light from a xenon lamp under the same conditions as in the example. After irradiation, it was confirmed that the semiconductor chip was not peeled off at the center of the slide glass. [Explanation of symbols]

[0094] 1...temporary fixing laminate, 10...support substrate, 30...temporary fixing material layer, 31, 31A, 31c...curable resin layer, 31B, 32...light absorbing layer, 40...semiconductor substrate, 41...rewiring layer, 45...semiconductor member, 50...sealing layer, 60...semiconductor element, hν...light, S3...outermost surface, S1...support surface, S2...rear surface, X...area combining irradiated areas, X1, X2, X3...irradiated areas.

Claims

1. A step of preparing a temporary fixing laminate including a support substrate having a support surface and a back surface opposite thereto, and a temporary fixing material layer provided on the support surface; A step of temporarily fixing a semiconductor member to the supporting substrate via the temporary fixing material layer; A step of processing the semiconductor member temporarily fixed to the support substrate; a step of irradiating the temporary fixing laminate with light from the back surface side, thereby separating the semiconductor member from the support substrate; In this order, A part or the whole of the temporary fixing material layer is a light absorbing layer that absorbs light and generates heat, The light is sequentially irradiated onto a plurality of irradiated regions, each of the irradiated regions including a portion of the back surface; When viewed from a direction perpendicular to the back surface, adjacent irradiated areas partially overlap each other, and a combined area of ​​the plurality of irradiated areas includes the entire back surface. A method for manufacturing a semiconductor device.

2. The method of claim 1 , wherein the light is incoherent light.

3. The method of claim 2 , wherein the source of incoherent light is a xenon lamp.

4. The method according to any one of claims 1 to 3, wherein the light source is moved while the support substrate is fixed, so that the light is sequentially irradiated onto the plurality of irradiated regions.

5. The method according to any one of claims 1 to 3, wherein the light is sequentially irradiated onto the plurality of irradiated regions by rotating the support substrate while keeping a light source of the light fixed.

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