Component and process for managing plasma process byproduct material

Abstract

To provide a component for managing non-volatile and / or low-volatility byproduct materials that are generated within a plasma processing region of a plasma processing chamber during performance of various plasma-based processes on a substrate, and a processing method thereof.SOLUTION: In a system 100, a component includes a top window structure 107, a liner structure 139, an edge ring structure 131, a focus ring structure 135, a ground ring structure 133, a substrate access port shield, an insert liner for a port opening in a chamber wall, and an exhaust baffle assembly positioned within an exhaust channel. One or more process-exposed surfaces of various components are subjected to a surface roughening / texturizing process to impart a surface roughness and / or engineered topography to the process-exposed surface that promotes adhesion and retention of plasma process byproduct materials. The various components are used in lead zirconate titanate (PZT) film etching and / or platinum (Pt) film etching processes.SELECTED DRAWING: Figure 1B

Description

[Technical field]

[0001] The present invention relates to semiconductor device manufacturing. [Background technology] In various semiconductor manufacturing processes, a process gas is converted into a plasma in a processing chamber in which a substrate is placed. The substrate is exposed to the plasma to produce a desired effect on the substrate, such as to etch / remove material from the substrate and / or deposit material onto the substrate and / or modify the properties of the material on the substrate. During some semiconductor manufacturing processes, non-volatile and / or low volatility plasma processing by-products can be generated in the processing chamber. These by-products can cause various problems when they deposit and build up on various components along with the processing chamber. For example, the by-products may flake and / or peel off from the components and land on surfaces within the processing chamber that would preferably remain free of contaminants, such as the substrate support structures and the substrate itself. Additionally, the by-products may diffuse into small openings and mechanically active structures within the processing chamber, causing operational problems and / or increasing the amount of time and cost required to clean the processing chamber. The deposition and shedding of by-product materials in the processing chamber also increases the frequency at which the processing chamber must be shut down for cleaning, which negatively impacts the substrate manufacturing throughput of the processing chamber. It is in this context that the present invention arises. Summary of the Invention

[0002] In one example embodiment, a surface-textured plasma processing chamber component is disclosed as a ceramic component configured for placement in a plasma processing chamber, the ceramic component comprising at least one roughened surface oriented to be exposed to plasma processing by-products when the ceramic component is placed in the plasma processing chamber during operation of the plasma processing chamber, the at least one roughened surface configured to promote adhesion of plasma processing by-products to the ceramic component.

[0003] In one example embodiment, a plasma processing chamber is disclosed. The plasma processing chamber includes a substrate support structure configured to hold a substrate exposed to a plasma during operation of the plasma processing chamber. The plasma processing chamber further includes an upper window structure disposed above the substrate support structure to establish a plasma processing region between the substrate support structure and the upper window structure. The upper window structure is formed of a ceramic material. The upper window structure has a bottom surface facing toward the plasma processing region. The bottom surface has a surface roughness that promotes adhesion of plasma processing by-products to the bottom surface.

[0004] In an example embodiment, a method for plasma processing of a substrate is disclosed. The method includes providing a plasma processing chamber including a substrate support structure and an upper window structure. The substrate support structure is configured to hold a substrate exposed to a plasma. The upper window structure is disposed above the substrate support structure to establish a plasma processing region between the substrate support structure and the upper window structure. The upper window structure is formed of a ceramic material. The upper window structure has a bottom surface facing toward the plasma processing region. The bottom surface has a surface roughness that promotes adhesion of plasma processing by-products to the bottom surface. The method further includes generating a plasma in the plasma processing region. Components of the plasma interact with material on the substrate to generate plasma processing by-products, a portion of which adhere to the bottom surface of the upper window structure.

[0005] In one example embodiment, a method for manufacturing a component for use in a plasma processing chamber is disclosed. The method includes forming a ceramic component for installation in a plasma processing chamber. The ceramic component has at least one process-exposed surface. The method further includes roughening the at least one process-exposed surface to have an average surface roughness in the range of about 150 microinches (about 3.81 micrometers) to about 500 microinches (about 12.7 micrometers).

[0006] In one example embodiment, a method is disclosed for converting a coated component for use in a plasma processing chamber into a roughened component for use in a plasma processing chamber. The method comprises stripping a coating from a ceramic component to a bare ceramic material forming the ceramic component. The ceramic component is configured to be placed in a plasma processing chamber. The ceramic component has at least one process-exposed surface. The method further comprises roughening the at least one process-exposed surface to have an average surface roughness in the range of about 150 microinches to about 500 microinches.

[0007] In one example embodiment, an edge ring for use in a plasma processing chamber is disclosed. The focus ring comprises a ring structure formed of a ceramic material. The ring structure is configured to surround a substrate support structure in the plasma processing chamber. The ring structure has an inner surface oriented to be exposed to plasma processing by-products when the ring structure is disposed in the plasma processing chamber during operation of the plasma processing chamber. The inner surface is formed to have controlled surface topography variations that promote adhesion of plasma processing by-products to the inner surface.

[0008] In one example embodiment, a plasma processing chamber is disclosed that includes a substrate support structure configured to hold a substrate exposed to a plasma during operation of the plasma processing chamber. The plasma processing chamber further includes a focus ring that includes a ring structure formed of a ceramic material. The ring structure is configured to surround the substrate support structure within the plasma processing chamber. The ring structure has an inner surface oriented to be exposed to plasma processing by-products during operation of the plasma processing chamber. The inner surface is formed to have controlled surface topography variations that promote adhesion of plasma processing by-products to the inner surface.

[0009] In an example embodiment, a method for plasma processing of a substrate is disclosed. The method includes providing a plasma processing chamber including a substrate support structure and a focus ring. The focus ring includes a ring structure formed of a ceramic material. The ring structure is configured to surround the substrate support structure in the plasma processing chamber. The ring structure has an inner surface oriented to be exposed to plasma processing by-products during operation of the plasma processing chamber. The inner surface is formed to have controlled surface topography variations that promote deposition of the plasma processing by-products on the inner surface. The method further includes generating a plasma in a plasma processing region above the substrate support structure. Components of the plasma interact with material on the substrate to generate plasma processing by-products, a portion of which deposit on the inner surface of the ring structure.

[0010] In one example embodiment, a method for fabricating a focus ring for use in a plasma processing chamber is disclosed. The method includes forming a ring structure of a ceramic material. The ring structure is configured to surround a substrate support structure in the plasma processing chamber. The ring structure has an inner surface oriented to be exposed to plasma processing by-products when the ring structure is disposed in the plasma processing chamber during operation of the plasma processing chamber. The method further includes forming a controlled surface topography variation on the inner surface of the ring structure. The controlled surface topography variation promotes adhesion of plasma processing by-products to the inner surface.

[0011] In an example embodiment, a substrate access port shield for use in a plasma processing chamber is disclosed. The substrate access port shield comprises a shield portion, a first support portion, and a second support portion. The first support portion extends from a first end of the shield portion. The first support portion is configured to engage a vertically movable component in the plasma processing chamber. The second support portion extends from a second end of the shield portion. The second support portion is configured to engage a vertically movable component in the plasma processing chamber. The shield portion and the first and second support portions form a unitary shield structure extending along an arc. Vertical movement of the vertically movable component causes corresponding vertical movement of the unitary shield structure. The shield portion is configured to at least partially cover a substrate access port opening of the plasma processing chamber when the first and second support portions are engaged with the vertically movable component and the vertically movable component is in a lower vertical position. The shield portion is configured to not cover a substrate access port opening of the plasma processing chamber when the first and second support portions are engaged with the vertically movable component and the vertically movable component is in an upper vertical position.

[0012] In an example embodiment, a plasma processing chamber is disclosed. The plasma processing chamber includes a substrate support structure configured to hold a substrate exposed to a plasma during operation of the plasma processing chamber. The plasma processing chamber further includes a focus ring structure configured to surround the substrate support structure within the plasma processing chamber. The focus ring structure includes a ring portion formed as a hollow right cylinder and three radially extending structures configured to extend radially outward from an outer surface of the ring portion. The three radially extending structures are spaced apart along an outer periphery of the ring portion. The plasma processing chamber further includes a unitary shield structure including a shield portion, a first support portion, and a second support portion. The first support portion extends from a first end of the shield portion. The first support portion is configured to engage a first of the three radially extending structures of the focus ring structure. The second support portion extends from a second end of the shield portion. The second support portion is configured to engage a second of the three radially extending structures of the focus ring structure. The unitary shield structure is formed to extend along a circular arc. The shield portion is configured to at least partially cover a substrate access port opening of the plasma processing chamber when the focus ring structure is in a lower vertical position, and the shield portion is configured to not cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in an upper vertical position.

[0013] In an example embodiment, a method for plasma processing of a substrate is disclosed. The method includes providing a plasma processing chamber including a substrate support structure, a focus ring structure, and an integral shield structure. The focus ring structure is configured to surround the substrate support structure. The focus ring structure includes a ring portion formed as a hollow right cylinder and three radially extending structures configured to extend radially outward from an outer surface of the ring portion. The three radially extending structures are spaced apart along an outer periphery of the ring portion. The integral shield structure includes a shield portion, a first support portion, and a second support portion. The first support portion extends from a first end of the shield portion. The first support portion is configured to engage a first of the three radially extending structures of the focus ring structure. The second support portion extends from a second end of the shield portion. The second support portion is configured to engage a second of the three radially extending structures of the focus ring structure. The integral shield structure is formed to extend along a circular arc. The shield portion is configured to at least partially cover a substrate access port opening of the plasma processing chamber when the focus ring structure is in a lower vertical position. The shield portion is configured to not cover a substrate access port opening of the plasma processing chamber when the focus ring structure is in an upper vertical position. The method further comprises disposing the focus ring structure in the lower vertical position. The method further comprises generating a plasma in a plasma processing region above the substrate support structure.

[0014] In an example embodiment, a method for manufacturing a substrate access port shield for use in a plasma processing chamber is disclosed. The method includes forming a unitary shield structure to include a shield portion, a first support portion extending from a first end of the shield portion, and a second support portion extending from a second end of the shield portion. The first support portion is configured to engage a vertically movable component in the plasma processing chamber. The second support portion is configured to engage a vertically movable component in the plasma processing chamber. The unitary shield structure is formed to extend along an arc. The shield portion is configured to at least partially cover a substrate access port opening of the plasma processing chamber when the first and second support portions are engaged with the vertically movable component and the vertically movable component is in a lower vertical position. The shield portion is configured to not cover a substrate access port opening of the plasma processing chamber when the first and second support portions are engaged with the vertically movable component and the vertically movable component is in an upper vertical position.

[0015] In one example embodiment, an insert liner for a port of a plasma processing chamber is disclosed. The insert liner is configured to cover an inner surface of a port formed through a wall of the plasma processing chamber. The insert liner is configured to have sufficient mechanical flexibility to compress an outer surface profile of the insert liner to permit insertion of the insert liner into the port. The insert liner is configured to apply a spring force against the inner surface of the port upon release of compression of the outer surface profile of the insert liner.

[0016] In one example embodiment, a plasma processing system is disclosed. The plasma processing system includes a plasma processing chamber with a plasma processing region in which a plasma is generated during operation of the plasma processing chamber. The plasma processing chamber includes a wall forming a portion of an enclosure around the plasma processing region. The wall includes a port formed through the wall. The plasma processing system includes an insert liner disposed within the port. The insert liner is configured to cover an inner surface of the port. The insert liner is configured to apply a spring force against the inner surface of the port to hold the insert liner in place within the port.

[0017] In an example embodiment, a method for plasma processing of a substrate is disclosed. The method comprises providing a plasma processing chamber with a plasma processing region in which plasma is generated during operation of the plasma processing chamber. The plasma processing chamber comprises a wall forming a portion of an enclosure around the plasma processing region. The wall comprises a port formed therethrough. The method further comprises disposing an insert liner within the port. The insert liner is configured to cover an inner surface of the port. The insert liner is configured to apply a spring force against the inner surface of the port to hold the insert liner in place within the port. The method further comprises generating a plasma within the plasma processing region upon exposure to a substrate. Components of the plasma interact with materials on the substrate to generate plasma processing by-products. The insert liner prevents the plasma processing by-products from contacting the inner surface of the port.

[0018] In one example embodiment, a method is disclosed for manufacturing an insert liner for a port of a plasma processing chamber. The method includes forming an insert liner to cover an inner surface of a port formed through a wall of the plasma processing chamber. The insert liner is configured to have sufficient mechanical flexibility to compress an outer surface profile of the insert liner to permit insertion of the insert liner into the port. The insert liner is configured to apply a spring force against the inner surface of the port upon release of compression of the outer surface profile of the insert liner.

[0019] In one example embodiment, an exhaust baffle assembly for use in a plasma processing chamber is disclosed. The exhaust baffle assembly includes at least one baffle member configured to fit within an exhaust flow path of the plasma processing chamber. The at least one baffle member is configured to divert a process exhaust gas flow when disposed within the exhaust flow path. An exterior surface of the at least one baffle member is configured to promote adhesion of plasma processing by-products present in the process exhaust gas flow to the at least one baffle member.

[0020] In one example embodiment, a plasma processing system is disclosed. The plasma processing system includes a plasma processing chamber having a plasma processing region where a plasma is generated during operation of the plasma processing chamber. The plasma processing system further includes an exhaust flow path for the plasma processing chamber. The exhaust flow path is in fluid communication with the plasma processing region. The exhaust flow path is configured to direct a process exhaust gas flow from the plasma processing region. The plasma processing system further includes a pump connected to the exhaust flow path. The pump is configured to apply a negative pressure to an interior of the exhaust flow path. The plasma processing system further includes an exhaust baffle assembly disposed within the exhaust flow path. The exhaust baffle assembly includes at least one baffle member shaped to deflect the process exhaust gas flow within the exhaust flow path. An outer surface of the at least one baffle member is configured to promote adhesion of plasma processing by-products present in the process exhaust gas flow to the at least one baffle member.

[0021] In an example embodiment, a method for plasma processing of a substrate is disclosed. The method includes providing a plasma processing system including a plasma processing chamber and an exhaust flow path for the plasma processing chamber. The plasma processing chamber includes a plasma processing region where plasma is generated during operation of the plasma processing chamber. The exhaust flow path is in fluid communication with the plasma processing region. The exhaust flow path is configured to direct a process exhaust gas flow from the plasma processing region. The plasma processing system further includes a pump connected to the exhaust flow path. The pump is configured to apply a negative pressure to an interior of the exhaust flow path. The plasma processing system includes an exhaust baffle assembly disposed within the exhaust flow path. The exhaust baffle assembly includes at least one baffle member shaped to deflect the process exhaust gas flow within the exhaust flow path. An exterior surface of the at least one baffle member is configured to promote attachment of plasma processing by-products present in the process exhaust gas flow to the at least one baffle member. The method further includes generating a plasma within the plasma processing region by exposing the substrate to the plasma processing region. The method further includes operating a pump to apply a negative pressure within the exhaust passage to draw a flow of process exhaust gas from the plasma processing region to the exhaust passage through an exhaust baffle assembly in the exhaust passage.

[0022] In one example embodiment, a method for manufacturing an exhaust baffle assembly for use in a plasma processing system is disclosed. The method includes forming at least one baffle member to fit within an exhaust flowpath of a plasma processing chamber. The at least one baffle member is shaped to divert a process exhaust gas flow when positioned within the exhaust flowpath. The method further includes conditioning an exterior surface of the at least one baffle member to promote adhesion of plasma processing by-products present in the process exhaust gas flow to the at least one baffle member.

[0023] Other aspects and advantages of the present invention will become apparent from the following detailed description taken in conjunction with the accompanying drawings, which illustrate the invention. [Brief description of the drawings]

[0024] [Figure 1A] 1 illustrates an example of a system for performing plasma processing on a substrate in accordance with some embodiments.

[0025] [Figure 1B] 1B is a vertical cross-sectional view illustrating a portion of the system of FIG. 1A according to some embodiments.

[0026] [Figure 1C] 1 illustrates an isometric view of a substrate support structure with an edge ring structure and a ground ring structure disposed around the substrate support structure in accordance with some example embodiments.

[0027] [Figure 1D] FIG. 1 illustrates an isometric view of a substrate support structure with edge and ground ring structures disposed to surround the substrate support structure, and a focus ring structure disposed above and around a top surface of the substrate support structure, in accordance with some example embodiments.

[0028] [Figure 1E] FIG. 1D illustrates the configuration of FIG. 1D with the focus ring structure in an upper position relative to the substrate support structure, in accordance with some example embodiments.

[0029] [Figure 1F] 1 illustrates an isometric view of an example of a liner structure disposed on a ground ring structure, according to some example embodiments.

[0030] [Diagram 2] 1 is an isometric view showing a bottom view of an upper window structure according to some embodiments.

[0031] [Diagram 3] 1 is an isometric view of a liner structure according to some embodiments.

[0032] [Figure 4]1 is an isometric view showing an edge ring structure according to some embodiments.

[0033] [Diagram 5] 1 is an isometric view illustrating a focus ring structure according to some embodiments.

[0034] [Figure 6] 1 is an isometric view of a ground ring structure according to some embodiments.

[0035] [Figure 7] 4 is a flow chart illustrating a method for plasma processing of a substrate in accordance with some embodiments.

[0036] [Figure 8] 4 is a flow chart illustrating a method for manufacturing a surface textured plasma processing chamber component according to some embodiments of the present invention.

[0037] [Figure 9] 4 is a flow chart illustrating a method of converting a coated plasma processing chamber component into a surface-textured plasma processing chamber component in accordance with some embodiments of the present invention.

[0038] [Figure 10A] FIG. 2 is an isometric view illustrating a focus ring structure having controlled surface topography variations on an inner surface of a ring portion of the focus ring structure in accordance with some embodiments.

[0039] [Figure 10B] FIG. 10B is a perspective view illustrating the focus ring structure of FIG. 10A according to some embodiments.

[0040] [Figure 10C] FIG. 10B is a top view of the focus ring structure of FIG. 10A according to some embodiments.

[0041] [Figure 10D]FIG. 10D is a detailed view of the portion shown in FIG. 10C, according to some embodiments.

[0042] [Figure 10E] 1 is a cross-sectional view illustrating two adjacent convex structures according to some embodiments.

[0043] [Figure 10F] 1 is a vertical cross-sectional view through the center of a focus ring structure according to some embodiments.

[0044] [Figure 10G] FIG. 13 is a diagram for forming a rectangular grid convex structure on an inner surface of a ring portion of a focus ring structure according to some embodiments.

[0045] [Figure 10H] FIG. 13 is an illustration of forming a square lattice convex structure on an inner surface of a ring portion of a focus ring structure according to some embodiments.

[0046] [Figure 10I] FIG. 13 is an illustration of forming a hexagonal lattice convex structure on an inner surface of a ring portion of a focus ring structure according to some embodiments.

[0047] [Figure 10J] FIG. 13 is an illustration of forming a parallelogram lattice convex structure on an inner surface of a ring portion of a focus ring structure according to some embodiments.

[0048] [Figure 10K] FIG. 13 is a diagram for forming a diamond lattice convex structure on an inner surface of a ring portion of a focus ring structure according to some embodiments.

[0049] [Figure 11] 4 is a flow chart illustrating a method for plasma processing of a substrate in accordance with some embodiments.

[0050] [Figure 12]4 is a flow chart illustrating a method for manufacturing a focus ring structure for use in a plasma processing chamber, in accordance with some embodiments.

[0051] [Figure 13A] FIG. 1B illustrates the system of FIG. 1A with an access control device positioned over the opening, according to some embodiments.

[0052] [Figure 13B] 1 illustrates a chamber coupled to a substrate handling module by an access control device according to some embodiments.

[0053] [Figure 14] 1 illustrates a substrate access port shield for use in a chamber in accordance with some embodiments.

[0054] [Figure 15] 1 is an isometric view of a substrate access port shield showing cut out areas according to some embodiments.

[0055] [Figure 16] FIG. 13 illustrates a variation of a substrate access port shield in which the shield portion has a short vertical distance to allow sufficient exposure of the chamber opening when the focus ring structure is in the fully upper vertical position, in accordance with some embodiments.

[0056] [Figure 17A] FIG. 2 is a side view illustrating an example of a substrate access port shield disposed over a focus ring structure with the focus ring structure in a fully lowered position in accordance with some embodiments.

[0057] [Figure 17B] FIG. 2 is a side view illustrating an example of a substrate access port shield disposed over a focus ring structure with the focus ring structure in a fully upper position in accordance with some embodiments.

[0058] [Figure 18] 4 is a flow chart illustrating a method for plasma processing of a substrate in accordance with some embodiments.

[0059] [Figure 19] 4 is a flow chart illustrating a method for manufacturing a substrate access port shield for use in a plasma processing chamber, in accordance with some embodiments.

[0060] [Figure 20] 1 illustrates a chamber with an opening for inserting and removing a substrate into and from the chamber, according to some embodiments.

[0061] [Figure 21] A diagram showing an insert liner configured to be inserted into an opening for inserting and removing a substrate into a chamber and an insert liner configured to be inserted into an opening for a viewport, according to some embodiments.

[0062] [Figure 22] 1 is an isometric view of an insert liner configured to be inserted into an opening for inserting and removing a substrate into a chamber according to some embodiments.

[0063] [Figure 23] 1 is an isometric view of an insert liner configured to be inserted into an opening for a viewport, according to some embodiments.

[0064] [Figure 24] 23 illustrates a variation of the insert liner of FIG. 22, in which the insert liner is cut open on a vertical side of the insert liner to form a gap, according to some embodiments.

[0065] [Diagram 25] 23 is a front view of a variation of the insert liner of FIG. 22 with a raised area formed on the top surface of the insert liner, according to some embodiments.

[0066] [Figure 26] 1 illustrates an insert liner configured to be inserted into an opening for a viewport and having a vertical surface that blocks the opening with an inner surface of the chamber wall, according to some embodiments.

[0067] [Figure 27] A diagram showing an insert liner configured to be inserted into an opening for a viewport and having a vertical surface that substantially covers the window surface exposed through the opening, according to some embodiments.

[0068] [Figure 28] A diagram showing an insert liner configured to be inserted into an opening for a viewport, according to some embodiments, having a first vertical surface that substantially covers a surface of a window exposed through the opening, and a second vertical surface that blocks the opening with an inner surface of the chamber wall.

[0069] [Figure 29] FIG. 13 illustrates an insert plug configured to fit snugly within the opening for the viewport and provide continuity of the profile of the inner surface of the chamber wall, according to some embodiments.

[0070] [Diagram 30] 4 is a flow chart illustrating a method for plasma processing of a substrate in accordance with some embodiments.

[0071] [Diagram 31] 4 is a flow chart illustrating a method for manufacturing an insert liner for a plasma processing chamber, in accordance with some embodiments.

[0072] [Diagram 32] 2 illustrates an example of an exhaust baffle assembly disposed within an exhaust flow path of an exhaust assembly, according to some example embodiments.

[0073] [Diagram 33] FIG. 2 illustrates an exhaust baffle assembly disposed in the exhaust flow path proximate to the chamber, according to some embodiments.

[0074] [Diagram 34] FIG. 2 is a vertical cross-sectional view through a chamber, an exhaust assembly, and an exhaust baffle assembly, showing how the exhaust baffle assembly is positioned at the exhaust outlet from the chamber, according to some embodiments.

[0075] [Diagram 35] 1 is an isometric view of an example exhaust baffle assembly according to some embodiments.

[0076] [Diagram 36] 1 is a front view of an exhaust baffle assembly according to some embodiments.

[0077] [Figure 37] 2 is a side view illustrating an exhaust baffle assembly, according to some embodiments.

[0078] [Figure 38] 4 is a flow chart illustrating a method for plasma processing of a substrate in accordance with some embodiments.

[0079] [Figure 39] 4 is a flow chart illustrating a method for manufacturing an exhaust baffle assembly for use in a plasma processing system, in accordance with some embodiments. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0080] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to one of ordinary skill in the art that the present invention may be practiced without some or all of these specific details. Additionally, detailed descriptions of well-known process operations are omitted in order to avoid unnecessarily obscuring the present invention.

[0081] FIG. 1A illustrates an example of a system 100 for performing plasma processing on a substrate 101, according to some embodiments. FIG. 1B illustrates a vertical cross-sectional view of a portion of the system 100, according to some embodiments. In some embodiments, the substrate 101 referred to in the present invention is a semiconductor substrate. However, it should be understood that in other embodiments, the substrate 101 referred to in the present invention may be a substrate formed of sapphire, GaN, GaAs, or SiC, or other substrate materials, and may include a glass panel / substrate, a metal foil, a metal sheet, a polymeric material, and the like. Also, in various embodiments, the substrate 101 referred to in the present invention may have various forms, shapes, and / or sizes. For example, in some embodiments, the substrate 101 may correspond to a 200 mm (millimeter) semiconductor wafer, a 300 mm semiconductor wafer, or a 450 mm semiconductor wafer. Also, in some embodiments, the substrate 101 may correspond to a non-circular substrate, such as a rectangular substrate for a flat panel display, among other shapes.

[0082] The system 100 includes a plasma processing chamber 102 for performing a plasma-based process on a substrate 101. The plasma-based process can be essentially any process in which components of a plasma are used to modify properties of the substrate 101 in a predetermined and controlled manner. In various embodiments, the plasma-based process is an etching process to remove material from the substrate 101, or a deposition process to add material to the substrate 101, or a combination of etching and deposition processes.

[0083] The chamber 102 includes a wall 105 that surrounds the interior of the chamber 102. In some embodiments, the wall 105 is formed of a conductive material and has an electrical connection to a reference ground potential. The wall 105 may include multiple openings / ports configured for various purposes. For example, the wall 105 of the example chamber 102 includes an opening 106A for the insertion and removal of the substrate 101 into the chamber 102. In some embodiments, the opening 106A is coupled to a slit valve that provides passage of a robotic substrate handling device into the chamber 102 through the opening 106A and provides sealing of the opening 106A during operation of the chamber 102. The wall 105 of the example chamber 102 also includes an opening 106B that provides a viewport for observing the plasma processing region 109 within the chamber 102 manually or by various devices, such as optical monitoring or end-point detection devices, among others. The opening 106B may be hermetically covered by a window 108 formed of an optionally transparent material, such as glass or plastic, or other similar material.

[0084] A substrate support structure 103 resides within the chamber 102 and is configured to hold the substrate 101 during plasma processing within the chamber 102. In some embodiments, the substrate support structure 103 is an electrostatic chuck configured to generate an electrostatic field to hold the substrate 101. In various embodiments, the substrate support structure 103 can include various components and systems. For example, the substrate support structure 103 can be configured with one or more electrodes for transmitting radio frequency power and / or generating a bias voltage. The substrate support structure 103 can also include one or more temperature control devices, such as heaters and / or cooling channels. The substrate support structure 103 can also include multiple lift pins and associated mechanics to facilitate movement of the substrate 101 between a robotic handling device and the substrate support structure 103. The substrate support structure 103 can also include multiple sensors and / or probes for measuring temperature and for measuring electrical parameters, such as voltage and / or current.

[0085] An upper window structure 107 is disposed above the substrate support structure 103 and spaced from the substrate support structure 103 such that a plasma processing region 109 exists between the substrate support structure 103 and the upper window structure 107. In some embodiments, the wall 105 comprises an upper flange structure 111 configured to receive and support the upper window structure 107. The upper window structure 107 is formed of a material capable of transmitting radio frequency (RF) signals, such as quartz or ceramic, among others. Also, in some embodiments, the upper window structure 107 is configured to function as a gas distribution plate. For example, the upper window structure 107 may comprise a plurality of gas input ports, an array of internal fluid channels in fluid communication with the gas input ports, and a plurality of gas output ports in fluid communication with the internal fluid channels. One or more process gases provided to the gas input ports of the upper window structure 107 are flowed through the internal fluid channels to the gas output ports of the upper window structure 107, where the process gases are provided into the plasma processing region 109. The gas output ports and internal fluid flow passages of the upper window structure 107 can be configured to deliver one or more process gases into the plasma processing region 109 in a spatially controlled manner.

[0086] A coil assembly 113 is disposed above the upper window structure 107. The coil assembly 113 is connected to a radio frequency (RF) generator 115 through an impedance matching circuit 117. The coil assembly 113 is configured to transmit RF power through the upper window structure 107 to the plasma processing region 109 when RF power is transmitted from the RF generator 115 to the coil assembly 113 through the impedance matching circuit 117. The impedance matching circuit 117 comprises an arrangement of capacitors and inductors configured to ensure that the impedance seen by the RF generator 115 at the input of the impedance matching circuit 117 is sufficiently close to the output impedance at which the RF generator 115 is designed to operate (typically 50 ohms) so that the RF power generated and transmitted by the RF generator 115 is efficiently transmitted to the plasma processing region 109, for example, without unacceptable or undesirable reflections.

[0087] In various embodiments, the RF generator 115 may comprise one or more RF signal generators operating at one or more frequencies. Multiple RF signal frequencies may be simultaneously provided to the coil assembly 113. In some embodiments, the signal frequency output by the RF generator 115 is set within a range of 1 kHz (kilohertz) to 100 MHz (megahertz). In some embodiments, the signal frequency output by the RF generator 115 is set within a range of 400 kHz to 60 MHz. In some embodiments, the RF generator 115 is configured to generate RF signals at frequencies of 2 MHz, 27 MHz, 13.56 MHz, and 60 MHz. In some embodiments, the RF generator 115 is configured to generate one or more high frequency RF signals within a frequency range of about 2 MHz to about 60 MHz, and one or more low frequency RF signals within a frequency range of about 100 kHz to about 2 MHz. It should be understood that the above RF signal frequency ranges are provided by way of example. In practice, the RF generator 115 can be configured to generate any RF signal having essentially any frequency necessary to generate a plasma within the plasma processing region 109. Additionally, the RF generator 115 can include frequency-based filtering (i.e., high-pass filtering and / or low-pass filtering) to ensure that a specified RF signal frequency is delivered to the coil assembly 113.

[0088] The chamber 102 is connected to a process gas supply system 120, which allows one or more process gases to be supplied in a controlled manner to the plasma processing region 109. The process gas supply system 120 comprises one or more process gas sources and an arrangement of valves and mass flow controllers to allow one or more process gases to be provided to the plasma processing region 109 at a controlled flow rate and a controlled flow time. In operation, the process gas supply system 120 operates to supply one or more process gases to the plasma processing region 109, and RF power is supplied from the RF generator 115 to the coil assembly 113, which in turn generates an electromagnetic field within the plasma processing region 109 to convert the one or more process gases in the plasma processing region 109 into a plasma. Reactive components of the plasma (such as ions and / or radicals) may then interact with portions of the substrate 101.

[0089] An exhaust assembly 119 is connected to the plasma processing chamber 102. The exhaust assembly 119 includes an exhaust flow path 121 having an internal flow area in fluid communication with the plasma processing chamber 109. The exhaust assembly 119 also includes a pump 123 in fluid communication with the internal flow area of ​​the exhaust flow path 121. In some embodiments, the exhaust assembly 119 includes a duct / plumbing 122 for fluidly connecting the exhaust flow path 121 to the pump 123. During operation, the pump 123 operates to direct exhaust gases and process by-products from the plasma processing region 109 through the internal flow area of ​​the exhaust flow path 121 and the duct / plumbing 122 to the pump 123.

[0090] In some embodiments, the substrate support structure 103 is configured to receive bias RF power from a bias RF generator 125 through an impedance matching circuit 127 to provide generation of a bias voltage on the substrate support structure 103 (and on the substrate 101 itself) to attract ions from the plasma in the plasma processing region 109 towards the substrate 101 held on the substrate support structure 103. The impedance matching circuit 127 comprises an arrangement of capacitors and inductors configured to ensure that the impedance seen by the RF generator 125 at the input of the impedance matching circuit 127 is sufficiently close to the output impedance at which the RF generator 125 is designed to operate (typically 50 ohms) so that the RF power generated and transmitted by the RF generator 125 is efficiently transmitted to the substrate support structure 103, for example, without unacceptable or undesirable reflections.

[0091] In various embodiments, the bias RF generator 125 may comprise one or more RF signal generators operating at one or more frequencies. Multiple RF signal frequencies may be simultaneously provided to the substrate support structure 103. In some embodiments, the signal frequency output by the bias RF generator 125 is set in a range of 1 kHz to 100 MHz. In some embodiments, the signal frequency output by the bias RF generator 125 is set in a range of 400 kHz to 60 MHz. In some embodiments, the bias RF generator 125 is configured to generate RF signals at frequencies of 2 MHz, 27 MHz, 13.56 MHz, and 60 MHz. In some embodiments, the bias RF generator 125 is configured to generate one or more high frequency RF signals in a frequency range of about 2 MHz to about 60 MHz and one or more low frequency RF signals in a frequency range of about 100 kHz to about 2 MHz. It should be understood that the above RF signal frequency ranges are provided by way of example. In practice, the bias RF generator 125 can be configured to generate any RF signal having essentially any frequency necessary to generate a predetermined bias voltage at the substrate 101. Additionally, the bias RF generator 125 can include frequency-based filtering (i.e., high-pass filtering and / or low-pass filtering) to ensure that the specified RF signal frequency is delivered to the substrate support structure 103.

[0092] The system 100 may also include a control module 129. In some embodiments, the control module 129 is implemented as a combination of computer hardware and software. The control module 129 may be connected and configured to provide control of the process gas supply system 120, the RF generator 115 and its associated impedance matching circuit 117, the RF generator 125 and its associated impedance matching circuit 127, the pump 123, and essentially any other controllable components of the system 100, such as temperature control devices and substrate lift pins in the substrate support structure 103, among others. The control module 129 may also be connected and configured to receive signals from various components, sensors, and monitors in the system 100. For example, the control module 129 may be connected and configured to receive voltage and / or current measurement signals from the substrate support structure 103. And, the control module 129 may be connected and configured to receive temperature and pressure measurement signals from within the plasma processing region 109. It should be understood that the control module 129 may be connected and configured to control essentially any active device (i.e., controllable device) in the system 100. And, the control module 129 may be connected and configured to monitor essentially any physical and / or electrical state, condition, and / or parameter at essentially any location in the system 100. The control module 129 may also be configured to synchronously direct the operation of various components in the system 100 to perform the above-mentioned plasma processing operations on the substrate 101. For example, the control module 129 may be configured to operate the system 100 by executing process input and control instructions / programs. The process input and control instructions / programs may include a process recipe having time-dependent instructions for parameters (power levels, timing parameters, process gases, mechanical movement of the substrate 101, etc.) required to obtain a desired process result on the substrate 101.

[0093] FIG. 1C is an isometric view of the substrate support structure 103 with an edge ring structure 131 and a ground ring structure 133 disposed around the substrate support structure 103, according to some example embodiments. A vertical cross-sectional view of the edge ring structure 131 and the ground ring structure 133 is also shown in FIG. 1B, according to some example embodiments. In some embodiments, the edge ring structure 131 is configured to surround the substrate support structure 103 immediately adjacent the substrate support structure 103. The edge ring structure 131 provides a uniform RF field to aid in uniformity in plasma generation within the plasma processing region 109. In some embodiments, the edge ring structure 131 is formed of a ceramic material. In some embodiments, the edge ring structure 131 is formed of aluminum oxide. In some embodiments, the edge ring structure 131 is formed of silicon carbide. It should be understood that in various embodiments, the edge ring structure 131 may be formed of essentially any material that has a sufficiently high electrical resistivity to maintain electrical isolation between the substrate support structure 103 and the ground ring structure 133, is chemically compatible with the materials present in the plasma processing region 109 during operation of the chamber 102, and has mechanical and thermal stability in the presence of the temperatures and pressures present in the plasma processing region 109 during operation of the chamber 102.

[0094] The ground ring structure 133 is formed of a conductive material and is electrically connected to the chamber wall 105 such that it is electrically connected to a reference ground potential. In some embodiments, the ground ring structure 133 is formed of a metallic material, particularly aluminum or stainless steel or alloys thereof. It should be understood that in various embodiments, the ground ring structure 133 may be formed of essentially any material that has a sufficiently high electrical conductivity to provide a surface of reference ground potential around the substrate support structure 103, is chemically compatible with materials present in the plasma processing region 109 during operation of the chamber 102, and has mechanical and thermal stability in the presence of temperatures and pressures present in the plasma processing region 109 during operation of the chamber 102.

[0095] FIG. 1D is an isometric view illustrating substrate support structure 103 with edge ring structure 131 and ground ring structure 133 disposed to surround substrate support structure 103, and with focus ring structure 135 disposed above and around an upper surface of substrate support structure 103, according to some example embodiments. A vertical cross-sectional view of focus ring structure 135 is shown in FIG. 1B, according to some example embodiments. In some embodiments, focus ring structure 135 is disposed within plasma processing chamber 102 to surround plasma processing region 109. Focus ring structure 135 includes ring portion 135A configured as a hollow right cylinder with height H1, inner diameter ID1, and wall thickness WT1. Focus ring structure 135 may further include three radial extension structures 135B1, 135B2, 135B3 configured to extend radially outward from an outer surface of ring portion 135A. The three radially extended structures 135B1, 135B2, 135B3 are spaced apart along the circumference of ring portion 135A to provide stable vertical movement of ring portion 135A by the three radially extended structures 135B1, 135B2, 135B3. The three radially extended structures 135B1, 135B2, 135B3 are configured to engage with three respective lift components 137A, 137B, 137C to raise and lower focus ring structure 135 relative to substrate support structure 103 when focus ring structure 135 is disposed within plasma processing chamber 102. For example, focus ring structure 135 can be lifted relative to substrate support structure 103 in preparation for placement of substrate 101 on and removal of substrate 101 from substrate support structure 103. FIGURE 1E illustrates the configuration of FIGURE 1D with focus ring structure 135 in a raised position relative to substrate support structure 103, according to some example embodiments. During processing of substrate 101, focus ring structure 135 can be lowered relative to substrate support structure 103 to position focus ring structure 135 proximate an upper surface of substrate 101, as shown in FIGURE 1D.

[0096] In some embodiments, focus ring structure 135 is configured to assist in focusing ions generated in the plasma in plasma processing region 109 onto a surface of substrate 101 supported on substrate support structure 103. The focusing of ions provided by focus ring structure 135 may enhance processing uniformity across substrate 101 and at the edge of substrate 101. In some embodiments, focus ring structure 135 is formed of a ceramic material. In some embodiments, focus ring structure 135 is formed of aluminum oxide. In some embodiments, focus ring structure 135 is formed of silicon carbide. It should be appreciated that in various embodiments, focus ring structure 135 may be formed of essentially any material that has suitable electrical properties to enable it to focus ions from the plasma in plasma processing region 109 toward substrate 101 during operation of chamber 102, is chemically compatible with materials present in plasma processing region 109 during operation of chamber 102, and has mechanical and thermal stability in the presence of temperatures and pressures present in plasma processing region 109 during operation of chamber 102.

[0097] In some embodiments, a liner structure 139 is disposed within the plasma processing chamber 102. FIG. 1F illustrates an isometric view of an example of the liner structure 139 disposed on the ground ring structure 133, according to some example embodiments. In some embodiments, the liner structure 139 is configured to be in physical contact with the ground ring structure 133. The liner structure 139 is configured to extend around at least a portion of the plasma processing region 109 within the plasma processing chamber 102. The liner structure 139 has an inner surface 139A facing toward the plasma processing region 109. In some embodiments, the liner structure 139 is formed of a ceramic material. In some embodiments, the liner structure 139 is formed of aluminum oxide. In some embodiments, the liner structure 139 is formed of silicon carbide. It should be understood that in various embodiments, the liner structure 139 may be formed of essentially any material that has suitable electrical properties compatible with the generation of plasma in the plasma processing region 109 during operation of the chamber 102, is chemically compatible with the materials present in the plasma processing region 109 during operation of the chamber 102, and has mechanical and thermal stability in the presence of the temperatures and pressures present in the plasma processing region 109 during operation of the chamber 102.

[0098] In some embodiments, liner structure 139 is configured to substantially cover and / or protect an inner surface of wall 105 of chamber 102 from materials present in plasma processing region 109 during operation of chamber 102. More specifically, liner structure 139 may be formed as a hollow right cylinder and may include a number of cutout portions (i.e., openings) through which components may extend and / or through which visibility is provided. For example, liner structure 139 includes opening 140A for exposing plasma processing region 109 to exhaust flow path 121. Liner structure 139 also includes openings 140B, 140C, and 140D for allowing unhindered vertical movement of three radially extending structures 135B1, 135B2, 135B3 of focus ring structure 135. Liner structure 139 also includes an opening 140E at the location of opening 106A in wall 105 of chamber 102 to provide for insertion and removal of substrate 101 into and from chamber 102. Liner structure 139 also includes an opening 140F at the location of opening 106B in wall 105 of chamber 102 to provide an unobstructed view into the interior of chamber 102.

[0099] During processing of the substrate 101 in the chamber 102, non-volatile and / or low-volatility by-products may be generated in the plasma processing region 109. In some processes, abundant amounts of these non-volatile and / or low-volatility by-products may be generated. For example, in some processes, a lead zirconate titanate (PZT) film present on the substrate 101 (e.g., a silicon substrate) is etched, and correspondingly, a large amount of non-volatile and / or low-volatility by-products is generated. And, in another example, in some processes, a platinum-based film present on the substrate 101 is etched, and correspondingly, a large amount of non-volatile and / or low-volatility by-products is generated. It should also be understood that a large amount of non-volatile and / or low-volatility by-products may be generated in response to other plasma-based processes performed on the substrate 101. The non-volatile and / or low-volatility by-products may adhere to surfaces of various components in the chamber 102. However, the non-volatile and / or low volatility by-products may have difficulty adhering or being retained on the surfaces of the various components within the chamber 102, leading to the non-volatile and / or low volatility by-products flaking and / or peeling off from the surfaces of the various components within the chamber 102. The non-volatile and / or low volatility by-products flaking or peeling off from the surfaces within the chamber 102 can cause serious problems leading to large yield losses, such as increased particle counts on the substrate 101 that subsequently cause device defects. The flaking or peeling non-volatile and / or low volatility by-products can also cause problems if they are lodged on the top surface of the substrate support structure 103 or on windows used for optical viewing of the plasma processing region 109, such as for optical endpoint detection. The flaking or peeling non-volatile and / or low volatility by-products can also cause problems if they are sucked into the exhaust pump and associated exhaust mechanical systems.

[0100] Also, the generation of non-volatile and / or low volatility by-products that tend to flake or delaminate from the surfaces of components within the chamber 102 may require frequent shutdown of the chamber 102 to clean the non-volatile and / or low volatility by-products before they deposit to a level where flaking and / or delamination may occur. It should be appreciated that having to frequently shut down the chamber 102 reduces the processing throughput of the substrate 101. Furthermore, the non-volatile and / or low volatility by-products may be resistant to waferless automated cleaning processes, which may mean that the chamber 102 may need to be manually opened and cleaned, which is time consuming and expensive. Furthermore, components within the chamber 102 may be formed of aluminum-based materials with an exterior coating, and the coating may not withstand frequent cleaning processes. For example, some components within the chamber 102 may be formed of anodized aluminum and / or may have a coating (such as a yttria coating). The aggressive cleaning required to remove non-volatile and / or low volatile by-products from these components can strip the anodization / coating, which then requires the component to be re-anodized / re-coated after cleaning, resulting in increased costs. Also, each time a component needs to be re-anodized / re-coated, the component's base material is consumed, thereby shortening the component's useful life; that is, there is a limit to the number of re-anodization / re-coating cycles each component can undergo. And each time a component needs to be invasively cleaned and / or re-anodized / re-coated, the component can be damaged and rendered unusable, resulting in further costs.

[0101] Disclosed herein are components and processes for managing non-volatile and / or low volatility by-products generated within the plasma processing region 109 during the performance of various plasma-based processes on the substrate 101. In some embodiments, various components within the chamber 102 are formed of ceramic materials and formed to have roughened / textured exterior surfaces. For example, in various embodiments, the upper window structure 107 and / or the liner structure 139 and / or the edge ring structure 131 may be formed of ceramic materials and formed to have roughened / textured exterior surfaces exposed to the plasma processing region 109. The roughened / textured exterior surfaces promote the attachment and retention of non-volatile and / or low volatility by-products. It should be appreciated that the attachment and retention of non-volatile and / or low volatility by-products on the surfaces of the components with the chamber 102 allows the chamber 102 to operate for longer periods of time between cleanings. For example, utilizing ceramic components having a roughened / textured exterior surface in the chamber 102 can extend the mean time between cleanings (MTBC) of the chamber 102 by up to 400% or more by not allowing non-volatile and / or low volatility by-products to flake or peel off on the substrate 101 and substrate support structure 103. Thus, utilizing ceramic components having a roughened / textured exterior surface in the chamber 102 can reduce defect density on the substrate 101, increase productivity (i.e., extend availability of the chamber 102 and increase processing throughput of substrates 101 through the chamber 102), and improve component life by reducing the frequency of component cleaning and component reconditioning cycles.

[0102] Also, utilizing uncoated ceramic materials for the various components (such as the upper window structure 107 and / or the liner structure 139 and / or the edge ring structure 131) within the chamber 102 allows for better control of surface roughness as compared to anodized / coated materials. More specifically, because anodizing / coating the components must be done after the roughening process is completed on the components, it is difficult to predict and control how the application of the anodizing / coating will affect the surface roughness previously applied to the components. For example, applying a coating to a roughened / textured component surface may inversely smooth the surface. Also, applying a coating to a component surface after the surface has been roughened / textured may cause damage to the component by introducing stresses on the component surface that may lead to cracking of the component. Additionally, because less material of the ceramic components is consumed during the refurbishment / cleaning process and the subsequent re-roughening / re-texturing process, ceramic components are more likely to recover after many refurbishment / cleaning cycles than non-ceramic components. The resilience of the ceramic components to aggressive refurbishment / cleaning treatments offers cost savings, as the bulk ceramic of the components can withstand many refurbishment / cleaning / recourcing / retexturing cycles.

[0103] In some embodiments, various components or portions thereof within the chamber 102, such as, for example, the lower surface of the upper window structure 107 exposed to the plasma processing region 109, and / or the liner structure 139, and / or the edge ring structure 131, are roughened / textured to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, various components or portions thereof within the chamber 102, such as, for example, the lower surface of the upper window structure 107 exposed to the plasma processing region 109, and / or the liner structure 139, and / or the edge ring structure 131, are roughened / textured to have an average surface roughness (Ra) of about 500 microinches (about 12.7 micrometers). The average surface roughness (Ra) is the arithmetic mean of the absolute values ​​of the deviations of the surface profile height from the surface mean line and is recorded within an evaluation length along the surface as shown in Equation 1:

[0104]

number

[0105] where L=evaluation length, Z(x)=profile height function.

[0106] In various embodiments, a surface-textured plasma processing chamber component is disclosed. The surface-textured plasma processing chamber component includes a ceramic component configured for placement in a plasma processing chamber (such as, for example, in chamber 102). In some embodiments, the ceramic component of the surface-textured plasma processing chamber component is formed of aluminum oxide. In some embodiments, the ceramic component of the surface-textured plasma processing chamber component is formed of silicon carbide. However, it should be understood that in various embodiments, the ceramic component of the surface-textured plasma processing chamber component may be formed of ceramic materials other than aluminum oxide or silicon carbide.

[0107] The ceramic component comprises at least one roughened surface oriented to be exposed to plasma processing by-products when the ceramic component is disposed in a plasma processing chamber during operation of the plasma processing chamber. The at least one roughened surface is configured to promote adhesion of plasma processing by-products to the ceramic component. The average surface roughness (Ra) of the at least one roughened surface is configured to promote adhesion of non-volatile and / or low volatile plasma processing by-products to the at least one roughened surface. In some embodiments, the at least one roughened surface has an average surface roughness (Ra) in a range of about 150 microinches to about 500 microinches. In some embodiments, the at least one roughened surface has an average surface roughness (Ra) of about 500 microinches (about 12.7 micrometers). Also, in some embodiments, a ceramic bare material forming the ceramic component is exposed on the at least one roughened surface of the ceramic component.

[0108] In some embodiments, improved adhesion of non-volatile and / or low volatility by-products to the at least one roughened surface is affected at the molecular level through increased van der Waals forces. In contrast to the at least one roughened surface, a surface with low surface roughness (i.e., a smooth component surface) creates high surface tension energy that acts to repel adhesion of plasma processing by-product ions and / or molecules. In some embodiments, the at least one roughened surface configured to promote adhesion of plasma processing by-products to the ceramic component can have a high contact angle and low surface tension to promote adhesion of plasma processing by-product ions and / or molecules. Additionally, the at least one roughened surface of the ceramic component exhibits less flaking and / or peeling of non-volatile and / or low volatility by-products from the ceramic component.

[0109] In some embodiments, at least one rough surface of the ceramic component is roughened by media blasting. In other words, the ceramic component is subjected to media blasting to form at least one rough surface on the ceramic component. In various embodiments, the media blasting can be defined and performed to increase the surface roughness, create a high contact angle on the surface, and increase the overall surface area of ​​the surface of the component subjected to the media blasting. In various embodiments, the media blasting can be defined and performed to affect the ceramic component to be generated with at least one rough surface with media including one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and strahlulus, among other types of media. It should be understood that the media blasting applies a predetermined roughness / texture substantially uniformly across the target surface area of ​​the component. Also, in some embodiments, the media blasting process can be performed in conjunction with a patterned mask to generate a predetermined surface topography on the target surface area of ​​the component. For example, the patterned mask can include a distribution of open areas through which the media blast material can pass to reach the surface of the component when the patterned mask is placed on the component. The media blast material removes some of the component material that is within the open areas of the patterned mask, but does not remove the component material protected by the patterned mask, thereby producing the predetermined surface topography on the target surface area of ​​the component.

[0110] It should be appreciated that the use of components formed of uncoated ceramics having one or more roughened / textured exterior surfaces improves the ability to refurbish such components. For example, to refurbish such components, a media blasting process can be performed (or re-performed) on the component to both clean the component and re-roughen / re-texture the exterior surface of the component. The ability to refurbish a component by media blasting without recoating the component eliminates the expense of coating the component and avoids the generation of coating-induced stresses in the component that can lead to mechanical failure of the component. Furthermore, a component can be refurbished multiple times (e.g., 20 or more times) by media blasting without compromising the mechanical integrity of the component through removal of too much component material. Additionally, in addition to or as an alternative to media blasting, at least one rough surface may be formed, at least in part, by performing a knurling process on the ceramic component prior to firing the ceramic component.

[0111] In some embodiments, the surface-textured plasma processing chamber component described above is the upper window structure 107 of the chamber 102. FIG. 2 is an isometric view showing the bottom surface 107A of the upper window structure 107 according to some embodiments. The upper window structure 107 is a ceramic component that is installed in the chamber 102 with the bottom surface 107A oriented to face the plasma processing region 109. As with the ceramic components described above, in various embodiments, the upper window structure 107 may be formed of aluminum oxide, silicon carbide, or essentially any other ceramic material that is chemically, mechanically, thermally, and electrically compatible to function as the upper window structure 107 during operation of the chamber 102. Also, in some embodiments, the upper window structure 107 is configured to function as a gas distribution plate that provides a supply of one or more process gases to the plasma processing region 109. In these embodiments, the upper window structure 107 may include an internal array of gas supply channels configured to direct a flow of one or more process gases from one or more input ports disposed on the exterior of the upper window structure 107 (e.g., a top or edge surface of the upper window structure 107) to one or more output ports 107B disposed on a bottom surface 107A of the upper window structure 107. In this manner, one or more process gases may be flowed through the upper window structure 107 and into the plasma processing region 109, with the upper window structure 107 functioning to spatially distribute the supply of one or more process gases to the plasma processing region 109 based on the spatial location and flow state (open or closed) of the one or more output ports 107B.

[0112] The bottom surface 107A of the upper window structure 107 comprises at least one roughened surface 107C oriented for exposure to plasma processing by-products when the upper window structure 107 is disposed in the chamber 102 during operation of the chamber 102. In some embodiments, the bottom surface 107A of the upper window structure 107 comprises a peripheral ring-shaped region 107D configured to engage a sealing component when the upper window structure 107 is installed in the chamber 102. In some embodiments, the peripheral ring-shaped region 107D is smoothed to have an average surface roughness (Ra) of about 20 microinches (about 0.508 micrometers). In some embodiments, the region of the bottom surface 107A inside the peripheral ring-shaped region 107D is at least one roughened surface 107C that is roughened / textured to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the at least one rough surface 107C is roughened / textured to have an average surface roughness (Ra) of about 500 microinches. In some embodiments, the upper window structure 107 remains in the form of a bare ceramic component without any coating after forming the at least one rough surface 107C on the bottom surface 107A during utilization of the upper window structure 107 in the chamber 102.

[0113] In some embodiments, the surface-textured plasma processing chamber component mentioned above is a liner structure 139. FIG. 3 is an isometric view of the liner structure 139, according to some embodiments. The liner structure 139 is configured to extend around at least a portion of the plasma processing region 109 in the chamber 102. In some embodiments, the liner structure 139 has at least one roughened inner surface 139A oriented for exposure to plasma processing by-products when the liner structure 139 is disposed in the chamber 102 during operation of the chamber 102. In some embodiments, the entire liner structure 139, including the inner surface 139A and the outer surface 139B, is roughened / textured to promote adhesion of plasma processing by-products to the liner structure 139.

[0114] In some embodiments, the liner structure 139 is a ceramic component placed within the chamber 102 to cover and protect the interior walls of the chamber 102. Similar to the ceramic components described above, in various embodiments, the liner structure 139 may be formed of aluminum oxide, silicon carbide, or essentially any other ceramic material that is chemically, mechanically, thermally, and electrically compatible to function as the liner structure 139 during operation of the chamber 102. In some embodiments, the liner structure 139 remains in the form of a bare ceramic component without any coating during utilization of the liner structure 139 within the chamber 102 after forming at least one roughened surface on the liner structure 139. In some embodiments, the liner structure 139 is roughened / textured to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the liner structure 139 is roughened / textured to have an average surface roughness (Ra) of about 500 microinches.

[0115] In some embodiments, the surface-textured plasma processing chamber component described above is a ring structure for installation in chamber 102, where the ring structure is configured to circumscribe a substrate support structure 103 in chamber 102. In various embodiments, the ring structure may be one or both of a focus ring structure 135 and an edge ring structure 131, by way of example. The ring structure is characterized by having at least one process-exposed surface, which is one or both of an inner surface of the ring structure and a top surface of the ring structure. The at least one process-exposed surface is at least one roughened surface oriented for exposure to plasma processing by-products when the ring structure is disposed in chamber 102 during operation of chamber 102.

[0116] FIG. 4 is an isometric view of the edge ring structure 131, according to some embodiments. The edge ring structure 131 is shown having at least one roughened process-exposed surface 131A (light gray in FIG. 4) oriented to be exposed to plasma processing by-products when the edge ring structure 131 is placed in the chamber during operation of the chamber 102. In some embodiments, only the process-exposed surface 131A of the edge ring structure 131 is roughened / textured. However, in some embodiments, portions of the edge ring structure 131 other than the process-exposed surface 131A may also be roughened / textured to facilitate manufacturing. In some embodiments, the edge ring structure 131 is a ceramic component. Similar to the ceramic components described above, in various embodiments, the edge ring structure 131 may be formed of aluminum oxide, silicon carbide, or essentially any other ceramic material that is chemically, mechanically, thermally, and electrically compatible to function as the edge ring structure 131 during operation of the chamber 102. In some embodiments, the edge ring structure 131 remains in the form of a bare ceramic component without any coating during utilization of the edge ring structure 131 in the chamber 102 after forming at least one roughened surface on the edge ring structure 131. In some embodiments, the process-exposed surface 131A of the edge ring structure 131 is roughened / textured to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the process-exposed surface 131A of the edge ring structure 131 is roughened / textured to have an average surface roughness (Ra) of about 500 microinches.

[0117] 5 is an isometric view illustrating focus ring structure 135, according to some embodiments. In some embodiments, inner surface 135A1 of ring portion 135A of focus ring structure 135 is at least one roughened surface oriented for exposure to plasma processing by-products when focus ring structure 135 is disposed in chamber 102 during operation of chamber 102. In some embodiments, in addition to inner surface 135A1 of ring portion 135A, top surfaces of radially extended structures 135B1, 135B2, 135B3 are also part of at least one roughened surface oriented for exposure to plasma processing by-products when focus ring structure 135 is disposed in chamber 102 during operation of chamber 102. And, in some embodiments, the entirety of ring portion 135A of focus ring structure 135 (including both inner surface 135A1 and outer surface 135A2 of ring portion 135A) and top surfaces of radially extended structures 135B1, 135B2, 135B3 constitute at least one roughened surface oriented for exposure to plasma processing by-products when focus ring structure 135 is disposed in chamber 102 during operation of chamber 102. And, in some embodiments, the entire outer surface of focus ring structure 135, including ring structure 135A and radially extended structures 135B1, 135B2, 135B3, constitutes at least one roughened surface oriented for exposure to plasma processing by-products when focus ring structure 135 is disposed in chamber 102 during operation of chamber 102.

[0118] In some embodiments, focus ring structure 135 is a ceramic component. Similar to the ceramic components described above, in various embodiments, focus ring structure 135 may be formed of aluminum oxide, silicon carbide, or essentially any other ceramic material that is chemically, mechanically, thermally, and electrically compatible for functioning as focus ring structure 135 during operation of chamber 102. In some embodiments, focus ring structure 135 remains in the form of a bare ceramic component without any coating during utilization of focus ring structure 135 within chamber 102 after forming at least one roughened surface on focus ring structure 135. In some embodiments, one or more process-exposed surfaces of focus ring structure 135 are roughened / textured to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, one or more process-exposed surfaces of focus ring structure 135 are roughened / textured to have an average surface roughness (Ra) of about 500 microinches.

[0119] In some embodiments, the surface textured plasma processing chamber components described above may be non-ceramic components (such as the ground ring structure 133). FIG. 6 is an isometric view of the ground ring structure 133 according to some embodiments. The ground ring structure 133 comprises several process-exposed surfaces 133A, 133B, 133C that are exposed to plasma processing by-products during operation of the chamber 102. The process-exposed surfaces 133A, 133B, 133C may be roughened / textured in the same manner as described above for the ceramic components to promote adhesion of the by-products to the ground ring structure 133. In some embodiments, the ground ring structure 133 is formed of aluminum, stainless steel, or another conductive material that is chemically, mechanically, thermally, and electrically compatible with the plasma processing operations performed in the chamber 102. In some embodiments, the media blasting process described above may be utilized to roughen / texture the process-exposed surfaces 133A, 133B, 133C of the ground ring structure 133. However, the type of media used for the ground ring structure 133 may be different than that used for the ceramic components. For example, media having a greater hardness may be used in a media blasting process to roughen / texture the process-exposed surfaces 133A, 133B, 133C of the ground ring structure 133. In some embodiments, the process-exposed surfaces 133A, 133B, 133C of the ground ring structure 131 are roughened / textured to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the process-exposed surfaces 133A, 133B, 133C of the ground ring structure 133 are roughened / textured to have an average surface roughness (Ra) of about 500 microinches. In some embodiments, the process-exposed surfaces 133A, 133B, 133C of the ground ring structure 133 remain without a coating after undergoing the roughening / texturing process during use of the ground ring structure 133 in the chamber 102.However, in some embodiments, the process-exposed surfaces 133A, 133B, 133C of the ground ring structure 133 are coated after undergoing a roughening / texturing process, and then the coated ground ring structure 133 is utilized in the chamber 102. Also, in embodiments in which the process-exposed surfaces 133A, 133B, 133C of the ground ring structure 133 are coated, the roughening / texturing of the process-exposed surfaces 133A, 133B, 133C performed prior to coating can be specified to ensure that a predetermined amount of average surface roughness (Ra) remains on the process-exposed surfaces 133A, 133B, 133C after coating. In some embodiments, the coating applied to the roughened / textured process-exposed surfaces 133A, 133B, 133C of the ground ring structure 133 is either a yttria coating, an anodization coating, or another type of coating that is chemically, mechanically, thermally, and electrically compatible with the plasma processes performed in the chamber 102.

[0120] It should be appreciated that the embodiments disclosed herein include embodiments of a plasma processing chamber (e.g., chamber 102) with one or more components having at least one process-exposed surface configured to have a surface roughness / texture that promotes adhesion of plasma processing by-products to the process-exposed surface. It should also be appreciated that the embodiments disclosed herein include operations of a plasma processing chamber with one or more components with roughened / textured process-exposed surfaces in plasma processing operations that generate non-volatile and / or low volatile by-products. For example, FIG. 7 is a flow chart illustrating a method for plasma processing of a substrate, according to some embodiments. The method includes an operation 701 for providing a plasma processing chamber (i.e., chamber 102) with a substrate support structure 103 and an upper window structure 107. The substrate support structure 103 is configured to hold a substrate 101 for exposure to a plasma generated in a plasma processing region 109. The upper window structure 107 is disposed above the substrate support structure 103 to establish the plasma processing region 109 between the substrate support structure 103 and the upper window structure 107. The upper window structure 107 is formed of a ceramic material and has a bottom surface 107A facing the plasma processing region 109. In various embodiments, the upper window structure 107 is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the chamber 102. The bottom surface 107A of the upper window structure 107 has a surface roughness / texture that promotes adhesion of plasma processing by-products to the bottom surface 107A. In some embodiments, the bottom surface 107A of the upper window structure 107 has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the bottom surface 107A of the upper window structure 107 has an average surface roughness (Ra) of about 500 microinches. In some embodiments, the bottom surface 107A of the upper window structure 107 has an average surface roughness (Ra) greater than about 500 microinches. In some embodiments, the ceramic bare material forming the upper window structure 107 is exposed at a bottom surface 107A of the upper window structure 107.

[0121] The method further includes an operation 703 for generating a plasma in the plasma processing region 109, where components of the plasma interact with material on the substrate 101 to generate plasma processing by-products, some of which deposit on the bottom surface 107A of the upper window structure 107. In some embodiments, the material on the substrate 101 is a lead zirconate titanate (PZT) film. In some embodiments, the material on the substrate 101 is a platinum (Pt) film. In some embodiments, the material on the substrate 101 is a film that causes a large amount of by-product deposition in the chamber 102 when exposed to the plasma generated in operation 703.

[0122] In some embodiments, generating the plasma in operation 703 may include applying radio frequency power to the process gas in the plasma processing region 109. In some embodiments, the radio frequency power applied may be in a range between about 400 watts (W) and about 1250 W. However, it should be understood that in various embodiments, the radio frequency power applied may be less than 400 W or greater than 1250 W. In some embodiments, the radio frequency power is applied by a radio frequency signal having a frequency of about 13.56 MHz. However, it should be understood that in various embodiments, the radio frequency power may be applied by a radio frequency signal having a frequency different from 13.56 MHz. And, in some embodiments, the method may include an operation for generating a bias voltage at the substrate support structure 103. In some embodiments, the bias voltage is generated in a range between about 100 volts (V) and about 600 V. However, it should be understood that in various embodiments, the bias voltage may be less than 100 V or greater than 600 V. And, in some embodiments, the bias voltage may be generated by a radio frequency signal having a frequency of about 13.56 MHz. However, it should be understood that in various embodiments, the bias voltage may be generated by a radio frequency signal having a frequency different from 13.56 MHz, and in various embodiments, the bias voltage may be generated by a DC source.

[0123] Additionally, in some embodiments, the method may include operations for maintaining a temperature of the substrate support structure 103 within a range of about 40 degrees Celsius (°C) to about 100°C, although it should be understood that in various embodiments, the temperature of the substrate support structure 103 may be maintained below 40°C or above 100°C. Additionally, in some embodiments, the method may include operations for maintaining a pressure in the plasma processing region 109 within a range of about 5 milliTorr to about 50 milliTorr, although it should be understood that in various embodiments, the pressure in the plasma processing region 109 may be maintained below 5 milliTorr or above 50 milliTorr.

[0124] In some embodiments, generating the plasma in operation 703 comprises supplying a process gas to the plasma processing region 109, where the process gas is one or more of chlorine (Cl2), boron trichloride (BCl3), argon (Ar), carbon tetrafluoride (CF4), oxygen (O2), trifluoromethane (CHF3), and sulfur hexafluoride (SF6). In some embodiments, generating the plasma in operation 703 comprises supplying chlorine (Cl2) to the plasma processing region 109 at a flow rate in a range between about 20 standard cubic centimeters per minute (sccm) and about 300 sccm. In some embodiments, generating the plasma in operation 703 comprises supplying boron trichloride (BCl3) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 703 comprises supplying argon (Ar) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 703 includes providing carbon tetrafluoride (CF4) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 200 sccm. In some embodiments, generating the plasma in operation 703 includes providing oxygen (O2) to the plasma processing region 109 at a flow rate in a range between about 20 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 703 includes providing trifluoromethane (CHF3) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 703 includes providing sulfur hexafluoride (SF6) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm.

[0125] The method for plasma processing of a substrate shown in FIG. 7 may further include utilizing a liner structure 139 in the chamber 102, where the liner structure 139 is configured to extend around at least a portion of the plasma processing region 109 in the chamber 102. In this method, the liner structure 139 has an inner surface 139A oriented for exposure to plasma processing by-products. The inner surface 139A of the liner structure 139 has a surface roughness that promotes adhesion of plasma processing by-products to the inner surface 139A of the liner structure 139. In various embodiments, the liner structure 139 is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the chamber 102. In some embodiments, the inner surface 139A of the liner structure 139 has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the inner surface 139A of the liner structure 139 has an average surface roughness (Ra) of about 500 microinches. In some embodiments, the inner surface 139A of the liner structure 139 has an average surface roughness (Ra) of greater than about 500 microinches. In some embodiments, the ceramic bare material forming the liner structure 139 is exposed at the inner surface 139A of the liner structure 139.

[0126] It should be appreciated that utilization of the uncoated ceramic liner structure 139 having an engineered surface roughness / texture that enables and promotes adhesion of plasma processing by-products eliminates the difficulty and expense of refurbishment of coated liner structures, such as hard anodized aluminum liner structures having a yttria coating, and also extends the life of the liner structure 139 by eliminating the increased risk of mechanical failure that may be caused by stresses induced in the liner structure 139 during refurbishment and recoating processes, such as those that occur during refurbishment and recoating processes used in conjunction with hard anodized aluminum chamber liner structures having a yttria coating.

[0127] The method for plasma processing of a substrate shown in FIG. 7 may further include utilizing a ring structure in the chamber 102, where the ring structure is configured to surround the substrate support structure 103 in the chamber 102. The ring structure has at least one process-exposed surface that is one or both of an inner surface and an upper surface of the ring structure. The process-exposed surface is oriented to be exposed to plasma processing by-products. Additionally, the process-exposed surface of the ring structure has a surface roughness that enables and promotes adhesion of plasma processing by-products to the process-exposed surface of the ring structure. In some embodiments, the ring structure is a focus ring structure 135. In some embodiments, the ring structure is an edge ring structure 131. In some embodiments, the ring structure is a ground ring structure 133. In some embodiments, the ring structure is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the chamber 102. In some embodiments where the ring structure is formed of a ceramic material, the ceramic bare material forming the ring structure is exposed at the roughened / textured process-exposed surface of the ring structure. In some embodiments, the ring structure is formed of a conductive material, such as aluminum, stainless steel, or another metallic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the chamber 102. In some embodiments where the ring structure is formed of a conductive material, the roughened / textured process-exposed surface of the ring structure may remain uncoated when used in the chamber 102. Alternatively, in some embodiments where the ring structure is formed of a conductive material, the roughened / textured process-exposed surface of the ring structure may be coated when used in the chamber 102. In some embodiments, the coating applied to the conductive ring structure is a yttria coating, anodization, or another type of coating that is chemically, mechanically, thermally, and electrically compatible with the operation of the chamber 102. In some embodiments, the process-exposed surface of the ring structure has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches.In some embodiments, the process-exposed surface of the ring structure has an average surface roughness (Ra) of about 500 microinches. In some embodiments, the process-exposed surface of the ring structure has an average surface roughness (Ra) of greater than about 500 microinches.

[0128] Utilizing components in chamber 102 with engineered surface roughness / texture that promotes adhesion of non-volatile and / or low volatility by-products to the components has been demonstrated to provide many process improvements. For example, in PZT and Pt etch processes, where large amounts of non-volatile and / or low volatility by-products are produced, utilizing components in chamber 102 with engineered surface roughness / texture has shown the following improvements: Improved etching uniformity on the substrate 101 Better etch control to reduce unwanted removal of the landing layer (Pt) during the main etch or overetch steps Better etch repeatability from board to board and from lot to lot Better etching results due to minimization of flaking and / or peeling of non-volatile and / or low volatile by-products onto the substrate support structure 103. This helps to avoid clamping issues of the substrate 101. Reduced photoresist reticulation Better etch profile control due to better consistency of photoresist erosion Minimization of etching defects on the substrate 101 caused by micromasking Prevents clamping problems on the board 101 due to insufficient clamping force Better heat removal and cooling behind the board 101 Prevention of hot spots on the substrate 101 being etched Better retention of non-volatile and / or low volatile etch by-products on the upper window structure 107, liner structure 139, ground ring structure 133, edge ring structure 131. This helps prevent flaking and / or peeling of non-volatile and / or low volatile etch by-products onto the substrate support structure 101 and / or substrate 101. Cost savings by eliminating external coatings on the upper window structure 107 and liner structure 139

[0129] 8 is a flow chart illustrating a method for fabricating a surface textured plasma processing chamber component according to some embodiments of the invention. The method includes an operation 801 for forming a ceramic component for installation in a plasma processing chamber (e.g., in chamber 102), where the ceramic component has at least one process exposed surface. In some embodiments, the ceramic component is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of chamber 102. In various embodiments, the ceramic component is either upper window structure 107, liner structure 139, focus ring structure 135, or edge ring structure 131.

[0130] The method further comprises an operation 803 for roughening the at least one process exposed surface to have a surface roughness that promotes adhesion of plasma process by-products to the at least one process exposed surface. In some embodiments, operation 803 is performed to impart an average surface roughness (Ra) of the at least one process exposed surface of the ceramic component in a range of about 150 microinches to about 500 microinches. In some embodiments, operation 803 is performed to impart an average surface roughness (Ra) of the at least one process exposed surface of the ceramic component greater than 500 microinches (12.7 micrometers). In some embodiments, operation 803 for roughening the at least one process exposed surface is performed by media blasting. In some embodiments, the media blasting impacts the at least one process exposed surface with a media comprising one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and stellite. In some embodiments, operation 801 for forming a ceramic component includes performing a knurling process on the ceramic component prior to firing the ceramic component, where the knurling process is defined to impart texture to at least one process-exposed surface of the ceramic component. In some embodiments, the ceramic bare material forming the ceramic component is exposed at at least one process-exposed surface after roughening of the at least one process-exposed surface in operation 803.

[0131] FIG. 9 is a flow chart illustrating a method of converting a coated plasma processing chamber component into a surface-textured plasma processing chamber component according to some embodiments of the invention. The method includes an operation 901 for stripping the coating from the ceramic component to a ceramic bare material forming the ceramic component. The ceramic component is configured to be placed in a plasma processing chamber (e.g., chamber 102). The ceramic component also has at least one process-exposed surface. In some embodiments, the ceramic component is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of chamber 102. In various embodiments, the ceramic component is either upper window structure 107, liner structure 139, focus ring structure 135, or edge ring structure 131.

[0132] The method further comprises an operation 903 for roughening the at least one process-exposed surface of the ceramic component to have a surface roughness that promotes adhesion of plasma process by-products to the at least one process-exposed surface. In some embodiments, operation 903 is performed to impart an average surface roughness (Ra) to the at least one process-exposed surface of the ceramic component in a range between about 150 microinches and about 500 microinches. In some embodiments, operation 903 is performed to impart an average surface roughness (Ra) to the at least one process-exposed surface of the ceramic component that is greater than 500 microinches.

[0133] In some embodiments, operation 903 for roughening the at least one exposed surface is performed by media blasting. In some embodiments, the media blasting affects the at least one exposed surface with media including one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and stratum. In some embodiments, ceramic bare material forming the ceramic component is exposed at the at least one exposed surface after roughening the at least one exposed surface in operation 903. Also, in some embodiments, operation 901 for stripping the coating from the ceramic component is performed using media blasting. And, in some embodiments, both operations 901 and 903 are performed simultaneously using the same media blasting.

[0134] Prior to the surface roughening / texturing embodiments disclosed herein, focus ring structure 135 was conventionally formed to have a relatively smooth, feature-free surface on both the inner and outer surfaces of ring portion 135A, and on radially extended structures 135B1, 135B2, 135B3. Non-volatile and / or low volatility plasma processing by-products are less likely to adhere to a smooth, feature-free surface. For example, plasma-based etching of a PZT or Pt film on substrate 101 produces large amounts of non-volatile and / or low volatility by-products that may not adhere well to focus ring structure 135 conventionally formed to have a smooth, feature-free surface. As plasma processing by-products accumulate on focus ring structure 135, they may flake and / or peel off and land on substrate 101 and / or substrate support structure 103 due to the proximity of focus ring structure 135 to both substrate 101 and substrate support structure 103. Landing of plasma processing by-products on the substrate 101 can damage the substrate 101 or cause the formation of defects in structures formed on the substrate 101. Landing of plasma processing by-products on the substrate support structure 103 can also prevent proper clamping of the substrate 101 onto the substrate support structure 103, especially when the substrate 101 is not present on the substrate support structure 103, and can cause disadvantageously high helium flow at the backside of the substrate 101 (i.e., from the region between the substrate 101 and the substrate support structure 103), both of which can lead to the formation of defects on the substrate 101.

[0135] As discussed above, in various embodiments, roughening / texturing the surface of focus ring structure 135 can promote and substantially improve adhesion of plasma processing by-products to focus ring structure 135 in order to accommodate greater accumulation of plasma processing by-products on focus ring structure 135 before flaking and / or peeling of plasma processing by-products from focus ring structure 135 occurs. Thus, roughening / texturing the surface of focus ring structure 135 serves to delay the onset of flaking and / or peeling of plasma processing by-products from focus ring structure 135. However, continuing to further increase the roughness / texture of focus ring structure 135 may be less effective in increasing the average time before flaking and / or peeling of plasma processing by-products from focus ring structure 135 occurs.

[0136] Because focus ring structure 135 is disposed proximate to and above substrate 101 and substrate support structure 103, preventing flaking and / or peeling of plasma processing by-products from focus ring structure 135 is a problem of particular concern. In this regard, FIG. 10A is an isometric view illustrating focus ring structure 135-1 having controlled surface topography variations on inner surface 135-1A1 of ring portion 135-1A of focus ring structure 135-1 to promote adhesion of plasma processing by-products to focus ring structure 135-1, in accordance with some embodiments of the present invention. Like focus ring structure 135 described with respect to FIGS. 1D, 1E, and 5, focus ring structure 135-1 comprises ring portion 135-1A and three radially extending structures 135B1, 135B2, 135B3. Ring portion 135-1A is configured as a hollow right cylinder to surround substrate support structure 103 in chamber 102. Radially extended structures 135B1, 135B2, 135B3 are configured to extend radially outward from outer surface 135-1A2 of ring portion 135-1A. Radially extended structures 135B1, 135B2, 135B3 are configured to engage three respective lift components 137A, 137B, 137C to enable raising and lowering of focus ring structure 135-1 relative to substrate support structure 103. Focus ring structure 135-1 is formed of a ceramic material. In various embodiments, focus ring structure 135 may be formed of aluminum oxide, silicon carbide, or essentially any other ceramic material that is chemically, mechanically, thermally, and electrically compatible to function as focus ring structure 135 during operation of chamber 102.

[0137] Inner surface 135-1A1 of ring portion 135-1A is oriented to be exposed to plasma processing by-products in plasma processing region 109 when focus ring structure 135-1 is disposed in chamber 102 during operation of chamber 102. Inner surface 135-1A1 of ring portion 135-1A of focus ring structure 135-1 is formed to have controlled surface topography variations that promote adhesion of plasma processing by-products to inner surface 135-1A1. In some embodiments, the controlled surface topography variations formed on inner surface 135-1A1 of ring portion 135-1A of focus ring structure 135-1 comprise a grid of convex structures 1001 extending inwardly toward the area enclosed by ring portion 135-1A (i.e., extending inwardly toward plasma processing region 109). In FIG. 10A , convex structures 1001 are illustrated as light-colored structures arranged in a grid pattern. An exemplary convex structure 1001 is shown in FIG. 10A by reference numeral 1001. FIG. 10B is a perspective view of focus ring structure 135-1 of FIG. 10A in accordance with some embodiments. FIG. 10B illustrates how the lattice pattern of convex structure 1001 extends around the entire circumference of inner surface 135-1A1 of ring portion 135-1A of focus ring structure 135-1. FIG. 10C is a top view of focus ring structure 135-1 of FIG. 10A in accordance with some embodiments. FIG. 10D is a detailed view of portion 1003 of FIG. 10C in accordance with some embodiments. As shown in FIG. 10D, in some embodiments, convex structure 1001 is formed to have a dome shape. However, it should be understood that in various embodiments, convex structure 1001 may be formed to have essentially any geometric shape that promotes and enhances deposition and retention of plasma processing by-products on inner surface 135-1A1 of ring portion 135-1A of focus ring structure 135-1.

[0138] 10E is a cross-sectional view showing two adjacent convex structures 1001, according to some embodiments. In some embodiments, each convex structure 1001 extends inward toward an area surrounded by ring portion 135-1A of focus ring structure 135-1 by a distance (d1) in the range of about 0.5 millimeters (mm) to about 2 mm, or in the range of about 1 mm to about 2 mm, or about 1 mm. In some embodiments, the distance (d2) between adjacent convex structures 1001 is in the range of about 0.5 mm to about 2 mm. In some embodiments, the distance (d2) between adjacent convex structures 1001 is about 1 mm. In some embodiments, each convex structure 1001 has a base width (d3) in the range of about 1 mm to about 3 mm, or in the range of about 2 mm to about 3 mm, or about 2.5 mm, where base width (d3) is measured radially across convex structure 1001 at inner surface 135-1A1 of ring portion 135-1A of focus ring structure 135-1. In some embodiments, the tolerance on size and spacing of convex structures 1001 is about 10% of the specified dimension.

[0139] FIG. 10F shows focus ring structure 135-1 in a vertical cross-sectional view through its center, according to some embodiments. In the example of FIG. 10F, convex structures 1001 are arranged in a rectangular grid including five rows. In alternative embodiments, convex structures 1001 may be arranged in a rectangular grid including either fewer or more than five rows. FIG. 10G is an illustration for forming a rectangular grid of convex structures 1001 on inner surface 135-1A1 of ring portion 135-1A of focus ring structure 135-1, according to some embodiments. The rectangular grid is characterized by having convex structures 1001 arranged in a repeating rectangular pattern, as indicated by rectangles 1005, in both the horizontal (x) and vertical (y) directions around inner surface 135-1A1 of ring portion 135-1A of focus ring structure 135-1. In the rectangular lattice, the convex structures 1001 are spaced apart horizontally (x) by a distance 1007 and vertically (y) by a distance 1009, where the distance 1007 is greater than the distance 1009. In some embodiments, the distances 1007 and 1009 are in a range of about 0.5 mm to about 2 mm. In some embodiments, the distance 1009 is about 1 mm. In the example of FIG. 10G, the rectangular lattice of the convex structures 1001 has five columns (R1-R5). However, it should be understood that in various embodiments, the rectangular lattice of the convex structures 1001 can have two or more columns.

[0140] In addition to a rectangular grid as shown in FIG. 10G, in some embodiments, the convex structures 1001 may be arranged on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 in either a square grid, a hexagonal grid, a parallelogram grid, or a diamond grid. FIG. 10H is an illustration for forming a square grid of convex structures 1001 on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, according to some embodiments. A square grid is characterized by having convex structures 1001 arranged in a repeating square pattern, as indicated by squares 1011, in both the horizontal (x) and vertical (y) directions around the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1. In the square grid, the convex structures 1001 are spaced apart horizontally (x) by a distance 1013 and vertically (y) by a distance 1015, where the distance 1013 is substantially equal to the distance 1015. In some embodiments, the distances 1013 and 1015 are in a range of about 0.5 mm to about 2 mm. In some embodiments, the distances 1013 and 1015 are about 1 mm. In the example of FIG. 10H, the square grid of the convex structures 1001 has five columns (R1-R5). However, it should be understood that in various embodiments, the square grid of the convex structures 1001 can have two or more columns.

[0141] FIG. 10I is a diagram for forming a hexagonal lattice of convex structures 1001 on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, according to some embodiments. The hexagonal lattice is characterized by having the convex structures 1001 arranged in a repeating equilateral triangular pattern in both the horizontal direction (x) and the vertical direction (y) around the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, with adjacent equilateral triangles in the pattern being flipped in the vertical direction (y), as shown by equilateral triangle 1017. In the hexagonal lattice, adjacent convex structures 1001 are spaced apart from one another by a distance 1019. In some embodiments, the distance 1019 is in the range of about 0.5 mm to about 2 mm. In some embodiments, the distance 1019 is about 1 mm. In the example of FIG. 10I, the hexagonal lattice of the convex structures 1001 has five columns (R1-R5). However, it should be understood that in various embodiments, the hexagonal lattice of the convex structure 1001 may have two or more rows.

[0142] 10J is a diagram for forming a parallelogram lattice of convex structures 1001 on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, according to some embodiments. The parallelogram lattice is characterized by having convex structures 1001 arranged in a repeating parallelogram pattern in both the horizontal (x) and vertical (y) directions around the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, with adjacent parallelograms in the pattern having coincident vertices, as shown by parallelogram 1021. The parallelogram 1021 defining the parallelogram lattice has two horizontal parallel sides of equal length 1023 oriented to extend substantially in the horizontal direction (x) and two angled parallel sides of equal length 1025 oriented to extend at an angle 1027 between the two horizontal parallel sides. In the parallelogram lattice, adjacent convex structures 1001 are spaced apart from each other by three distances 1029, 1031, 1033. In some embodiments, the distances 1029, 1031, 1033 are in a range of about 0.5 mm to about 2 mm. In some embodiments, the minimum distance among the distances 1029, 1031, 1033 is about 1 mm. In the example of FIG. 10J, the parallelogram lattice of the convex structure 1001 has five columns (R1 to R5). However, it should be understood that in various embodiments, the parallelogram lattice of the convex structure 1001 can have two or more columns.

[0143] 10K is a diagram for forming a diamond lattice of convex structures 1001 on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, according to some embodiments. The diamond lattice is characterized by having convex structures 1001 arranged in a repeating diamond pattern in both the horizontal (x) and vertical (y) directions around the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, with adjacent diamonds in the pattern having coincident vertices, as shown by diamonds 1035. The diamonds 1035 that define the diamond lattice are parallelograms having opposite equal acute angles 1037 and opposite equal obtuse angles 1039, and four sides of equal length 1041. In the diamond lattice, adjacent convex structures 1001 are spaced apart from one another by two distances 1043 and 1045. In some embodiments, the distances 1043 and 1045 are in the range of about 0.5 mm to about 2 mm. In some embodiments, the minimum distance between the distances 1043 and 1045 is about 1 mm. In the example of FIG. 10K, the diamond lattice of the convex structure 1001 has nine columns (R1-R9). In some embodiments, the diamonds 1035 are configured such that the convex structures 1001 in vertically adjacent columns (e.g., R1-R9) do not overlap each other in the vertical direction (y). However, in some embodiments, the diamonds 1035 are configured such that the convex structures 1001 in vertically adjacent columns (e.g., R1-R9) overlap each other to some extent in the vertical direction (y). It should be understood that in various embodiments, the diamond lattice of the convex structure 1001 can have three or more columns.

[0144] In some embodiments, the controlled surface topography variations on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 are formed by a media blasting process. In some embodiments, a protective mask is applied to the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 to cover the locations where the convex structures 1001 are to be formed. The inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 is then subjected to a media blasting process to form the convex structures 1001 on the inner surface 135-1A1 by removing (i.e., eroding) a layer of the ceramic material forming the focus ring structure 135-1 from the inner surface 135-1A1. The protective mask is then removed. In some embodiments, the media blasting process used to form the convex structures 1001 simultaneously roughens / textures the portions of the inner surface 135-1A1 between and around the convex structures 1001 to promote adhesion of plasma processing by-products to the inner surface 135-1A1. In various embodiments, the media used in the media blasting process to form the convex structures 1001 may include one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and strahlulus, among others. Also, in some embodiments, surfaces of the focus ring structure 135-1 other than the inner surface 135-1A1 may be subjected to the media blasting process to impart a predetermined average surface roughness (Ra). For example, in some embodiments, the entire ring portion 135-1A and the upper surfaces of radially extended structures 135B1, 135B2, 135B3 may be media blasted to impart a predetermined average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches.

[0145] In some embodiments, the convex structure 1001 may be formed by performing a knurling process on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 when the ceramic material of the focus ring structure 135-1 is in a soft green state before firing of the ceramic. The knurling process is a processing process in which a pattern of a certain depth is formed in a material in a soft malleable state. After knurling and firing of the ceramic material of the focus ring structure 135-1, the convex structure 1001 results on the inner surface 135-1A1 of the ring portion 135-1A. The focus ring structure 135-1 may then be subjected to the media blasting process described above to impart a predetermined average surface roughness (Ra) to the ring portion 135-1A and the radially extending structures 135B1, 135B2, 135B3 of the focus ring structure 135-1. The convex structure 1001 and average surface roughness (Ra) imparted to the bare ceramic material of focus ring structure 135-1 enables utilization of focus ring structure 135-1 in chamber 102 in its bare, uncoated form, eliminating the costs and risks associated with coating and recoating focus ring structure 135-1.

[0146] It should be appreciated that the formation of the convex structures 1001 on the inner surface 135-1A1 of the ring portion 135-1A significantly adds surface area to the focus ring structure 135-1 to which plasma processing by-products may adhere. For example, in some embodiments, the arrangement of the convex structures 1001 may be defined to increase the surface area of ​​the inner surface 135-1A1 of the ring portion 135-1A by 400% or more, which provides an intentional and highly symmetrical surface topography to which a large amount of plasma processing by-products may deposit and adhere. Additionally, the average surface roughness (Ra) imparted to the focus ring structure 135-1 by the media blasting process provides a robust and highly textured surface for better adhesion of non-volatile and / or low volatile plasma processing by-products to the focus ring structure 135-1. The enhanced adhesion and retention of plasma processing by-products to the focus ring structure 135-1 provides an extension of the mean time between cleanings (MTBC) of the chamber 102, thereby improving the manufacturing throughput of the substrates 101. Additionally, the ability to utilize focus ring structure 135-1 within chamber 102 as a bare ceramic component without any coatings extends the service life of focus ring structure 135-1 by eliminating the need to remove coating material from focus ring structure 135-1 during refurbishment of focus ring structure 135-1.

[0147] FIG. 11 is a flow chart illustrating a method for plasma processing of a substrate, according to some embodiments. The method includes an operation 1101 for preparing a plasma processing chamber (i.e., chamber 102) with a substrate support structure 103 and a focus ring structure 135-1. Focus ring structure 135-1 includes a ring portion 135-1A formed of a ceramic material. In various embodiments, focus ring structure 135-1 is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of chamber 102. Ring portion 135-1A is configured to surround substrate support structure 103 within chamber 102. Ring portion 135-1A has an inner surface 135-1A1 oriented to be exposed to plasma processing region 109 where plasma processing by-products are generated during operation of chamber 102. Inner surface 135-1A1 is formed to have a controlled surface topography variation that promotes adhesion of plasma processing by-products to inner surface 135-1A1. In some embodiments, focus ring structure 135-1 has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, focus ring structure 135-1 has an average surface roughness (Ra) of about 500 microinches. In some embodiments, the ceramic bare material forming focus ring structure 135-1 is exposed at an outer surface of focus ring structure 135-1, and particularly at inner surface 135-1A1 of ring portion 135-1A of focus ring structure 135-1.

[0148] The method further includes an operation 1103 for generating a plasma in plasma processing region 109, where components of the plasma interact with material on substrate 101 to generate plasma processing by-products, some of which deposit on focus ring structure 135-1. In some embodiments, the material on substrate 101 is a lead zirconate titanate (PZT) film. In some embodiments, the material on substrate 101 is a platinum (Pt) film. In some embodiments, the material on substrate 101 is a film that causes a large amount of by-product deposition in chamber 102 when exposed to the plasma generated in operation 1103.

[0149] In some embodiments, generating the plasma in operation 1103 may include applying radio frequency power to the process gas in the plasma processing region 109. In some embodiments, the radio frequency power applied may be in a range of about 400 W to about 1250 W. However, it should be understood that in various embodiments, the radio frequency power applied may be less than 400 W or greater than 1250 W. In some embodiments, the radio frequency power is applied by a radio frequency signal having a frequency of about 13.56 MHz. However, it should be understood that in various embodiments, the radio frequency power may be applied by a radio frequency signal having a frequency different from 13.56 MHz. And, in some embodiments, the method may include an operation for generating a bias voltage at the substrate support structure 103. In some embodiments, the bias voltage is generated in a range of about 100 V to about 600 V. However, it should be understood that in various embodiments, the bias voltage may be less than 100 V or greater than 600 V. And, in some embodiments, the bias voltage may be generated by a radio frequency signal having a frequency of about 13.56 MHz. However, it should be understood that in various embodiments, the bias voltage may be generated by a radio frequency signal having a frequency different from 13.56 MHz, and in various embodiments, the bias voltage may be generated by a DC source.

[0150] Additionally, in some embodiments, the method may include operations for maintaining a temperature of the substrate support structure 103 within a range between about 40° C. and about 100° C., although it should be understood that in various embodiments, the temperature of the substrate support structure 103 may be maintained below 40° C. or above 100° C. Additionally, in some embodiments, the method may include operations for maintaining a pressure within the plasma processing region 109 within a range between about 5 milliTorr and about 50 milliTorr, although it should be understood that in various embodiments, the pressure within the plasma processing region 109 may be maintained below 5 milliTorr or above 50 milliTorr.

[0151] In some embodiments, generating the plasma in operation 1103 comprises supplying a process gas to the plasma processing region 109, where the process gas is one or more of chlorine (Cl2), boron trichloride (BCl3), argon (Ar), carbon tetrafluoride (CF4), oxygen (O2), trifluoromethane (CHF3), and sulfur hexafluoride (SF6). In some embodiments, generating the plasma in operation 1103 comprises supplying chlorine (Cl2) to the plasma processing region 109 at a flow rate in a range between about 20 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 1103 comprises supplying boron trichloride (BCl3) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 1103 comprises supplying argon (Ar) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 1103 includes providing carbon tetrafluoride (CF4) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 200 sccm. In some embodiments, generating the plasma in operation 1103 includes providing oxygen (O2) to the plasma processing region 109 at a flow rate in a range between about 20 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 1103 includes providing trifluoromethane (CHF3) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 1103 includes providing sulfur hexafluoride (SF6) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm.

[0152] 12 is a flow chart illustrating a method for fabricating a focus ring structure for use in a plasma processing chamber, according to some embodiments. The method includes an operation 1201 for forming a ring structure of a ceramic material, such as ring portion 135-1A of focus ring structure 135-1, where the ring structure is configured to surround a substrate support structure (e.g., substrate support structure 103) in a plasma processing chamber (e.g., chamber 102). The ring structure has an inner surface (e.g., inner surface 135-1A1) oriented to be exposed to a plasma processing region where plasma processing by-products are generated when the ring structure is disposed in the plasma processing chamber during operation of the plasma processing chamber. In some embodiments, the ring structure is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with operation of the plasma processing chamber. In some embodiments, forming the ring structure in operation 1201 includes forming three structures (e.g., radially extending structures 135B1, 135B2, 135B3) to extend radially outward from an outer surface of the ring structure, where the three structures are configured to engage three respective lift components to enable raising and lowering of the ring structure relative to a substrate support structure when the ring structure is disposed in a plasma processing chamber. In some embodiments, the top surfaces of the three structures extending radially outward from the outer surface of the ring structure are roughened to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches.

[0153] The method further comprises an operation 1203 for forming a controlled surface topography variation on the inner surface of the ring structure. The controlled surface topography variation promotes deposition of plasma processing by-products on the inner surface of the ring structure. In some embodiments, operation 1203 includes performing a media blasting process through a mask disposed on the inner surface of the ring structure. The mask is configured to expose a portion of the inner surface of the ring structure for removal / erosion to form the controlled surface topography variation on the inner surface of the ring structure. In some embodiments, the media blasting process affects the inner surface of the ring structure with media including one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite, among others. In some embodiments, operation 1203 includes performing a knurling process on the inner surface of the ring structure prior to firing of the ceramic material forming the ring structure. In some embodiments, the method may include roughening the inner surface of the ring structure to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the roughening of the inner surface of the ring structure is done by media blasting, which may or may not be the same media blasting used in operation 1203 to create the controlled surface topography variations on the inner surface of the ring structure. In some embodiments, the ceramic bare material forming the ring structure remains exposed on the inner surface of the ring structure.

[0154] As mentioned above, the wall 105 of the chamber 102 includes an opening 106A for the transfer of the substrate 101 into and out of the chamber 102. In some embodiments, the opening 106A is covered by an access control device (such as a slit valve or gate valve or similar device) that provides passage of a robotic substrate handling device into the chamber 102 through the opening 106A and provides sealing of the opening 106A during operation of the chamber 102. FIG. 13A illustrates the system 100 of FIG. 1A with an access control device 1301 positioned to cover the opening 106A, according to some embodiments. FIG. 13B illustrates the chamber 102 coupled to a substrate handling module 1303 by the access control device 1301, according to some embodiments. The substrate handling module 1303 may include a robotic substrate handling device 1305 configured to transfer the substrate 101 into and out of the chamber 102.

[0155] During plasma processing of the substrate 101 in the chamber 102, plasma processing by-products move freely around in the chamber 102, following the process gas flow pattern and / or existing pressure gradients. During plasma processing operations that generate non-volatile and / or low volatility by-products (such as PZT etch or Pt etch processes, among others), plasma processing by-products may enter the opening 106A and make their way to the access control device 1301. These plasma processing by-products may deposit on the chamber walls 105 in the opening 106A and on the inner surface of the access control device 1301. Then, during subsequent operation of the access control device 1301, some of the deposited plasma processing by-products may migrate into the access control device 1301 and possibly even into the substrate handling module 1303. It should be understood that the movement of plasma processing by-products into and / or through the access control device 1301 is undesirable as it spreads contaminants. Additionally, cleaning / removal of plasma processing by-products that have deposited in the opening 106A and migrated into the access control device 1301 is difficult, time consuming, and expensive as it often requires disassembly of the chamber 102 and / or the access control device 1301 to perform cleaning / removal of the plasma processing by-products. Additionally, the proximity of the opening 106A of the chamber 102 to the substrate handling module 1303 increases the potential for cross-contamination if any deposited by-product material is flaked and migrated onto the robotic substrate handler 1305 and transported to another part of the fabrication facility.

[0156] 14 illustrates a substrate access port shield 1401 for use in a chamber 102, according to some embodiments. The substrate access port shield 1401 includes a shield portion 1403 configured to be positioned over a portion of the opening 106A in the chamber 102. The substrate access port shield 1401 further includes a first support portion 1405 extending from a first end of the shield portion 1403. The substrate access port shield 1401 further includes a second support portion 1407 extending from a second end of the shield portion 1403. The shield portion 1403 and the first support portion 1405 and the second support portion 1407 form an integral shield structure that extends along an arc. In some embodiments, the arc of the substrate access port shield 1401 conforms to the arc of the liner structure 139.

[0157] The first support portion 1405 is configured to engage a vertically movable component in the chamber 102, and the second support portion 1407 is configured to engage a vertically movable component in the chamber 102, such that vertical movement of the vertically movable component causes corresponding vertical movement of the substrate access port shield 1401. In some embodiments, such as that shown in FIG. 14, the vertically movable component in the chamber 102 is a focus ring structure 135 / 135-1. In some embodiments, the substrate access port shield 1401 includes a plurality of cutout regions 1409A, 1409B, 1409C corresponding to the radial extension structures 135B1, 135B2, 135B3 of the focus ring structure 135 / 135-1. FIG. 15 is an isometric view of the substrate access port shield 1401 showing the cutout regions 1409A, 1409B, 1409C according to some embodiments. The cutout regions 1409A, 1409B, 1409C are formed to allow the substrate access port shield 1401 to be positioned vertically on the radial extension structures 135B1, 135B2, 135B3 of the focus ring structure 135 / 135-1, with the radial extension structures 135B1, 135B2, 135B3 being inserted into the cutout regions 1409A, 1409B, 1409C, respectively. In some embodiments, the cutout regions 1409A, 1409B, 1409C are also formed to allow the substrate access port shield 1401 to be held securely on the focus ring structure 135 / 135-1 by gravity alone (i.e., without any other fastening devices). However, in other embodiments, one or more fastening devices may be used to fasten the substrate access port shield 1401 to the focus ring structure 135 / 135-1. Also, in some embodiments, substrate access port shield 1401 may include one or more additional cut-out areas to accommodate observation of plasma processing region 109 when focus ring structure 135 / 135-1 is in the plasma processing position, such as for optical endpoint spectroscopy (OES) purposes or other purposes.

[0158] In embodiments where the substrate access port shield 1401 is disposed on the focus ring structure 135 / 135-1, vertical movement of the focus ring structure 135 / 135-1 by the lift components 137A, 137B, 137C causes corresponding vertical movement of the substrate access port shield 1401. It should also be appreciated that in some embodiments, the substrate access port shield 1401 can be utilized in the chamber 102 when the focus ring structure 135 / 135-1 is not present in the chamber 102. In these embodiments, the substrate access port shield 1401 is configured to interact with one or more vertically movable components in the chamber 102 other than the focus ring structure 135 / 135-1. For example, in some embodiments, the substrate access port shield 1401 is configured to directly connect to the lift components 137A, 137B, 137C when the focus ring structure 135 / 135-1 is not present in the chamber 102. In this manner, vertical movement of the lift components 137A, 137B, 137C causes corresponding vertical movement of the substrate access port shield 1401.

[0159] The shield portion 1403 is configured to at least partially cover the opening 106A of the chamber 102 when the first support portion 1405 and the second support portion 1407 are engaged with the vertically movable component (e.g., focus ring structure 135 / 135-1) and the vertically movable component is in a lower vertical position, and the shield portion 1403 is configured not to cover the opening 106A of the chamber 102 when the first support portion 1405 and the second support portion 1407 are engaged with the vertically movable component (e.g., focus ring structure 135 / 135-1) and the vertically movable component is in an upper vertical position. In some embodiments, depending on the configuration of focus ring structure 135 / 135-1 and the vertical travel distance of focus ring structure 135 / 135-1, it may be necessary to vertically shorten shield portion 1403 of substrate access port shield 1401 to allow full exposure of opening 106A of chamber 102 when focus ring structure 135 / 135-1 is in its fully upper vertical position. For example, FIG. 16 illustrates a variation of substrate access port shield 1401A in which shield portion 1403A has a shorter vertical distance 1411 to allow full exposure of opening 106A of chamber 102 when focus ring structure 135 / 135-1 is in its fully upper vertical position, according to some embodiments.

[0160] FIG. 17A is a side view of an example substrate access port shield 1401A disposed over focus ring structure 135 / 135-1 with focus ring structure 135 / 135-1 in a fully lowered position, according to some embodiments. In the example of FIG. 17A, vertical distance 1411 of shield portion 1403A of substrate access port shield 1401A covers about 75% of the vertical extent of opening 106A when focus ring structure 135 / 135-1 is in a fully lowered position. In various embodiments, substrate access port shield 1401A is configured to cover at least about 50% of the vertical extent of opening 106A when substrate access port shield 1401A is disposed over focus ring structure 135 / 135-1 and focus ring structure 135 / 135-1 is in a fully lowered position. In some embodiments, when the substrate access port shield 1401A is positioned over the focus ring structure 135 / 135-1 and the focus ring structure 135 / 135-1 is in its fully lowered position, the substrate access port shield 1401A is configured to cover at least two-thirds of the vertical extent of the opening 106A. In some embodiments, when the substrate access port shield 1401A is positioned over the focus ring structure 135 / 135-1 and the focus ring structure 135 / 135-1 is in its fully lowered position, the substrate access port shield 1401A is configured to cover the entire vertical extent of the opening 106A.

[0161] FIG. 17B is a side view illustrating an example substrate access port shield 1401A disposed over focus ring structure 135 / 135-1 with focus ring structure 135 / 135-1 in a fully upper position, according to some embodiments. In the example of FIG. 17B, vertical distance 1411 of shield portion 1403A of substrate access port shield 1401A is defined such that shield portion 1403A is disposed vertically above opening 106A. In some embodiments, vertical distance 1411 of shield portion 1403A of substrate access port shield 1401A may be defined such that shield portion 1403A still covers a portion of the vertical extent of opening 106A, so long as the unobscured vertical extent of opening 106A is large enough to accommodate movement of substrate 101 and robotic substrate handling device 1305 through opening 106A without interference.

[0162] In various embodiments, the substrate access port shield 1401 / 1401A is configured as a portion of a hollow right cylinder. In some embodiments, the radial thickness of the substrate access port shield 1401 / 1401A is substantially uniform. In various embodiments, the radial thickness of the substrate access port shield 1401 / 1401A is within a range of about 0.125 inches (about 3.175 mm) to about 0.5 inches (about 12.7 mm), or within a range of about 0.375 inches (about 9.525 mm) to about 0.5 inches (about 12.7 mm), or about 0.217 inches (about 5.5118 mm), or about 0.375 inches. In some embodiments, the radial thickness of the substrate access port shield 1401 / 1401A is non-uniform. For example, in some embodiments, the first support portion 1405 and the second support portion 1407 may have a different radial thickness than the shield portion 1403 / 1403A. Additionally, because some plasma processing operations are performed at low pressures, diffusion of plasma processing by-products within the chamber 102 can be significant. Thus, in some embodiments, it is of interest to have the substrate access port shield 1401 / 1401A positioned as radially close as possible to the liner structure 139 without contacting the liner structure 139 to reduce the area of ​​flow path through which by-products can diffuse between the substrate access port shield 1401 / 1401A and the liner structure 139. In some embodiments, the radial spacing 1701 between the substrate access port shield 1401 / 1401A and the liner structure 139 is, by way of example, about 0.1 inches (about 2.54 millimeters).

[0163] In some embodiments, such as those shown in Figures 15 and 16, the shield portion 1403 / 1403A of the substrate access port shield 1401 / 1401A is a first portion of a hollow right cylinder, the first support portion 1405 is a second portion of the hollow right cylinder, and the second support portion 1407 is a third portion of the hollow right cylinder. Also, in some embodiments, the shield portion 1403 / 1403A has a first vertical height (i.e., vertical distance 1411) measured in the axial direction of the hollow right cylinder, the first support portion 1405 has a second vertical height measured in the axial direction of the hollow right cylinder, and the second support portion 1407 has a third vertical height measured in the axial direction of the hollow right cylinder. In some embodiments, the first vertical height of the shield portion 1403 / 1403A, the second vertical height of the first support portion 1405, and the third vertical height of the second support portion 1407 are substantially equal. In some embodiments, the first vertical height of shield portion 1403 / 1403A is different from each of the second vertical height of first support portion 1405 and the third vertical height of second support portion 1407. In some embodiments, the second vertical height of first support portion 1405 and the third vertical height of second support portion 1407 are substantially equal. In some embodiments, the first vertical height of shield portion 1403 / 1403A is smaller than each of the second vertical height of first support portion 1405 and the third vertical height of second support portion 1407.

[0164] In some embodiments, the substrate access port shield 1401 / 1401A is formed as a monolithic ceramic component. In various embodiments, the substrate access port shield 1401 / 1401A may be formed of aluminum oxide, silicon carbide, or essentially any other ceramic material that is chemically, mechanically, thermally, and electrically compatible for use in the chamber 102. Also, in some embodiments, the substrate access port shield 1401 / 1401A may be formed of a non-ceramic material, so long as the material forming the substrate access port shield 1401 / 1401A is chemically, mechanically, thermally, and electrically compatible for the plasma processing operations performed in the chamber 102.

[0165] In some embodiments, the surface of the substrate access port shield 1401 / 1401A may be roughened / textured to have a predetermined average surface roughness (Ra) that promotes adhesion and retention of plasma processing by-products on the substrate access port shield 1401 / 1401A. In some embodiments, at least the radially inner surface of the substrate access port shield 1401 / 1401A has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches, where the radially inner surface faces toward the plasma processing region 109. In some embodiments, the entire outer surface of the substrate access port shield 1401 / 1401A has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches.

[0166] In some embodiments, the surface of the substrate access port shield 1401 / 1401A is roughened by media blasting. In various embodiments, the media blasting can be defined and performed to increase the surface roughness, create a high contact angle on the surface, and increase the overall surface area of ​​the surface of the substrate access port shield 1401 / 1401A. In various embodiments, the media blasting can be defined and performed to affect the surface of the substrate access port shield 1401 / 1401A with media including one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and strahlulus, among other media types. It should be appreciated that in some embodiments, the media blasting can impart a predetermined roughness / texture substantially uniformly on the surface of the substrate access port shield 1401 / 1401A. Also, in some embodiments, the media blasting process may be performed in conjunction with a patterned mask to generate a predetermined surface topography on the surface of the substrate access port shield 1401 / 1401A. For example, the patterned mask may include a distribution of open areas through which the media blasting material can pass to reach the surface of the substrate access port shield 1401 / 1401A. The media blasting material removes some of the ceramic material that is within the open areas of the patterned mask, but does not remove the ceramic material protected by the patterned mask, thereby generating a predetermined surface topography on the surface of the substrate access port shield 1401 / 1401A. Also, in addition to or instead of the media blasting process, a knurling process may be performed on the ceramic of the substrate access port shield 1401 / 1401A prior to firing the ceramic to impart roughness / texture to the surface of the substrate access port shield 1401 / 1401A.

[0167] In some embodiments, the ceramic material forming the substrate access port shield 1401 / 1401A is exposed at a radially inner surface of the substrate access port shield 1401 / 1401A. More specifically, in some embodiments, the substrate access port shield 1401 / 1401A formed of a ceramic material is left uncoated for use within the chamber 102. Also, in some embodiments in which the substrate access port shield 1401 / 1401A is formed of a non-ceramic material (such as, for example, aluminum), the substrate access port shield 1401 / 1401A may be coated with a suitable coating material (such as, among others, a yttria coating or an anodization coating).

[0168] The substrate access port shield 1401 / 1401A is a passive component that provides at least partial occlusion / coverage of the opening 106A of the chamber 102 to which the access control device 1301 is connected. Although the substrate access port shield 1401 / 1401A is a passive component, the substrate access port shield 1401 / 1401A behaves as if it were an active component by interacting with an active component. For example, the substrate access port shield 1401 / 1401A is on the focus ring structure 135 / 135-1 so that the substrate access port shield 1401 / 1401A can be moved vertically by controlled vertical movement of the focus ring structure 135 / 135-1. The use of the substrate access port shield 1401 / 1401A in the chamber 102 does not require modification of any other component or components in the chamber 102 and does not require the installation of additional actuating / moving components in the chamber 102.

[0169] The substrate access port shield 1401 / 1401A can be configured to prevent a majority of non-volatile and / or low volatility plasma processing by-products from entering the opening 106A and depositing in or near the access control device 1301. The substrate access port shield 1401 / 1401A also provides additional surface area on the inner periphery of the chamber 102 to help trap and retain non-volatile and / or low volatility plasma processing by-products, especially during plasma processing operations that generate significant amounts of such by-products (such as PZT etch and Pt etch processes). The substrate access port shield 1401 / 1401A provides a target surface onto which etch by-products may deposit, rather than entering the opening 106A and possibly the access control device 1301, which would be difficult to clean and likely subject to particle contamination. By reducing and / or preventing etch by-product deposition within the opening 106A, the substrate access port shield 1401 / 1401A functions to reduce the mean time to clean (MTTC) of the chamber 102.

[0170] In some embodiments, the substrate access port shield 1401 / 1401A is a consumable item that can be discarded and replaced during regularly scheduled openings of the chamber 102. By trapping non-volatile and / or low volatility plasma processing by-products, the substrate access port shield 1401 / 1401A functions to reduce particle generation within the chamber 102 and within the opening 106A during movement of the substrate 101 into and out of the chamber 102. Also, by reducing and / or preventing non-volatile and / or low volatility plasma processing by-products from entering the access control device 1301, the substrate access port shield 1401 / 1401A functions to prevent premature damage to the access control device 1301 that may be caused when by-products are trapped in the access control device 1301 or one or more seal (i.e., O-ring) areas of the access control device 1301. Thus, the substrate access port shield 1401 / 1401A functions to extend the life of the access control device 1301. The substrate access port shield 1401 / 1401A also helps prevent leaks in the area of ​​the access control device 1301 that may be caused by deposition and / or entrapment of non-volatile and / or low volatile plasma processing by-products, thereby providing better vacuum integrity to the chamber 102. Additionally, by helping to prevent by-products from entering the access control device 1301, the substrate access port shield 1401 / 1401A serves to reduce malfunctions of the access control device 1301 during opening and closing operations, and serves to reduce both the frequency, duration, and difficulty of physical cleaning of the access control device 1301. In some examples, utilization of the substrate access port shield 1401 / 1401A can reduce cleaning time of the access control device 1301 by 50% or more. Because the substrate access port shield 1401 / 1401A functions to reduce problems with the access control device 1301 caused by ingress of plasma processing by-products into the access control device 1301, the substrate access port shield 1401 / 1401A functions to reduce chamber 102 downtime due to problems with the access control device 1301.

[0171] 18 is a flow chart illustrating a method for plasma processing of a substrate, according to some embodiments. The method includes an operation 1801 for preparing a plasma processing chamber (i.e., chamber 102) including a substrate support structure 103, a focus ring structure 135 / 135-1, and a substrate access port shield 1401 / 1401A. The focus ring structure 135 / 135-1 is configured to surround the substrate support structure 103. The focus ring structure 135 / 135-1 includes a ring portion 135A formed as a hollow right cylinder and three radial extension structures 135B1, 135B2, 135B3 configured to extend radially outward from an outer surface 135A2 of the ring portion 135A. The substrate access port shield 1401 / 1401A includes a shield portion 1403, a first support portion 1405, and a second support portion 1407. A first support portion 1405 extends from a first end of the shield portion 1403. The first support portion 1405 is configured to engage a first one of the radially extending structures 135B1, 135B2, 135B3 of the focus ring structure 135 / 135-1. A second support portion 1407 extends from a second end of the shield portion 1403. The second support portion 1407 is configured to engage a second one of the radially extending structures 135B1, 135B2, 135B3 of the focus ring structure 135 / 135-1.

[0172] In some embodiments, the method includes connecting the substrate access port shield 1401 / 1401A to the focus ring structure 135 / 135-1 without fasteners. In some embodiments, the substrate access port shield 1401 / 1401A is secured to the focus ring structure 135 / 135-1 by gravity. In some embodiments, connecting the access port shield 1401 / 1401A to the focus ring structure 135 / 135-1 without fasteners includes inserting a first radial extension structure 135B1 of the focus ring structure 135 / 135-1 into a notch 1409A formed in a first support portion 1405 of the substrate access port shield 1401 / 1401A. Additionally, connecting the access port shield 1401 / 1401A to the focus ring structure 135 / 135-1 without fasteners includes inserting the second radial extension structure 135B2 of the focus ring structure 135 / 135-1 into the notch 1409B formed in the second support portion 1407 of the substrate access port shield 1401 / 1401A, and connecting the access port shield 1401 / 1401A to the focus ring structure 135 / 135-1 without fasteners includes inserting the third radial extension structure 135B3 of the focus ring structure 135 / 135-1 into the notch 1409C formed in the second support portion 1407 of the substrate access port shield 1401 / 1401A.

[0173] The method further comprises an operation 1803 for positioning focus ring structure 135 / 135-1 in a lower vertical position. In some embodiments, positioning focus ring structure 135 / 135-1 in a lower vertical position includes actuating three lift elements 137A, 137B, 137C to engage three radially extending structures 135B1, 135B2, 135B3, respectively, of focus ring structure 135 / 135-1. The method further comprises an operation 1805 for generating a plasma in plasma processing region 109 above substrate support structure 103. In some embodiments, the plasma is generated in operation 1805 such that components of the plasma interact with material on substrate 101 to generate plasma processing by-products, where a portion of the plasma processing by-products are blocked by access port shield 1401 / 1401A from entering opening 106A. In some embodiments, the material on substrate 101 is a lead zirconate titanate (PZT) film. In some embodiments, the material on substrate 101 is a platinum (Pt) film. In some embodiments, the material on substrate 101 is a film that causes significant by-product deposition in chamber 102 when exposed to the plasma generated in operation 1805. The method may further include ceasing generation of the plasma in plasma processing region 109 above substrate support structure 103 and positioning focus ring structure 135 / 135-1 in an upper vertical position to vertically raise substrate access port shield 1401 / 1401A to allow unobstructed passage of substrate 101 and robotic substrate handling device 1305 through opening 106A.

[0174] In some embodiments, generating the plasma in operation 1805 may include applying radio frequency power to the process gas in the plasma processing region 109. In some embodiments, the radio frequency power applied may be in a range between about 400 W and about 1250 W. However, it should be understood that in various embodiments, the radio frequency power applied may be less than 400 W or greater than 1250 W. In some embodiments, the radio frequency power is applied by a radio frequency signal having a frequency of about 13.56 MHz. However, it should be understood that in various embodiments, the radio frequency power may be applied by a radio frequency signal having a frequency different from 13.56 MHz. And, in some embodiments, the method may include an operation for generating a bias voltage at the substrate support structure 103. In some embodiments, the bias voltage is generated in a range between about 100 V and about 600 V. However, it should be understood that in various embodiments, the bias voltage may be less than 100 V or greater than 600 V. And, in some embodiments, the bias voltage may be generated by a radio frequency signal having a frequency of about 13.56 MHz. However, it should be understood that in various embodiments, the bias voltage may be generated by a radio frequency signal having a frequency different from 13.56 MHz, and in various embodiments, the bias voltage may be generated by a DC source.

[0175] Additionally, in some embodiments, the method may include operations for maintaining a temperature of the substrate support structure 103 within a range between about 40° C. and about 100° C., although it should be understood that in various embodiments, the temperature of the substrate support structure 103 may be maintained below 40° C. or above 100° C. Additionally, in some embodiments, the method may include operations for maintaining a pressure within the plasma processing region 109 within a range between about 5 milliTorr and about 50 milliTorr, although it should be understood that in various embodiments, the pressure within the plasma processing region 109 may be maintained below 5 milliTorr or above 50 milliTorr.

[0176] In some embodiments, generating the plasma in operation 1805 comprises supplying a process gas to the plasma processing region 109, where the process gas is one or more of chlorine (Cl2), boron trichloride (BCl3), argon (Ar), carbon tetrafluoride (CF4), oxygen (O2), trifluoromethane (CHF3), and sulfur hexafluoride (SF6). In some embodiments, generating the plasma in operation 1805 comprises supplying chlorine (Cl2) to the plasma processing region 109 at a flow rate in a range between about 20 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 1805 comprises supplying boron trichloride (BCl3) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 1805 comprises supplying argon (Ar) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 1805 includes providing carbon tetrafluoride (CF4) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 200 sccm. In some embodiments, generating the plasma in operation 1805 includes providing oxygen (O2) to the plasma processing region 109 at a flow rate in a range between about 20 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 1805 includes providing trifluoromethane (CHF3) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 1805 includes providing sulfur hexafluoride (SF6) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm.

[0177] 19 is a flow chart illustrating a method for fabricating a substrate access port shield 1401 / 1401A for use in a plasma processing chamber, according to some embodiments. The method includes an operation 1901 for forming a substrate access port shield 1401 / 1401A comprising a shield portion 1403, a first support portion 1405 extending from a first end of the shield portion 1403, and a second support portion 1407 extending from a second end of the shield portion 1403. The first support portion 1405 is configured to engage a vertically movable component (e.g., focus ring structure 135 / 135-1) in the plasma processing chamber (e.g., in chamber 102). The second support portion 1407 is configured to engage a vertically movable component in chamber 102. The substrate access port shield 1401 / 1401A is formed to extend along an arc and to at least partially cover an opening 106A in a wall 105 of the chamber 102 that functions as a substrate access port when the first support portion 1405 and the second support portion 1407 are engaged with the vertically moveable component and the vertically moveable component is in a lower vertical position. The substrate access port shield 1401 / 1401A is configured to not cover the opening 106A when the first support portion 1405 and the second support portion 1407 are engaged with the vertically moveable component and the vertically moveable component is in an upper vertical position.

[0178] In some embodiments, forming the substrate access port shield 1401 / 1401A includes forming a notch 1409A in the first support portion 1405 for receiving a first portion of the vertically moveable component (e.g., for receiving radial extension structure 135B1). Forming the substrate access port shield 1401 / 1401A may also include forming a notch 1409B in the second support portion 1407 for receiving a second portion of the vertically moveable component (e.g., for receiving radial extension structure 135B2). Forming the substrate access port shield 1401 / 1401A may also include forming a notch 1409C in the second support portion 1407 for receiving a third portion of the vertically moveable component (e.g., for receiving radial extension structure 135B3).

[0179] In some embodiments, operation 1901 includes forming the substrate access port shield 1401 / 1401A with aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with operation of the plasma processing chamber. In some embodiments, operation 1901 includes roughening the exterior surface of the substrate access port shield 1401 / 1401A to have an average surface roughness (Ra) in a range of about 150 microinches to about 500 microinches. In some embodiments, roughening the exterior surface of the substrate access port shield 1401 / 1401A is accomplished by media blasting, affecting the exterior surface of the substrate access port shield 1401 / 1401A with media including one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and strahlulus, among others. In some embodiments, operation 1901 includes performing a knurling process on an outer surface of the substrate access port shield 1401 / 1401A prior to firing of the ceramic material forming the substrate access port shield 1401 / 1401A. In some embodiments, the ceramic bare material forming the substrate access port shield 1401 / 1401A is left exposed at the outer surface of the substrate access port shield 1401 / 1401A.

[0180] As discussed with respect to Figures 1A and 1B, the walls 105 of the chamber 102 may include openings for various purposes. For example, Figure 20 shows the chamber 102 with an opening 106A for the entry and exit of the substrate 101 into the chamber 102, according to some embodiments. Figure 20 also shows the chamber 102 with an opening 106B that provides a viewport for observing the plasma processing region 109 within the chamber 102, either manually or by various devices, according to some embodiments. It should be understood that the openings 106A and 106B are provided as examples. In various embodiments, the chamber 102 may include only the opening 106A, or may include more openings than the openings 106A and 106B. Each opening (e.g., 106A, 106B) through the walls 105 of the chamber 102 forms a three-dimensional cavity or passageway having a geometry (depth and cross-sectional shape) defined by the shape of the wall 105 at the location of the opening.

[0181] During plasma processing of the substrate 101 in the chamber 102, plasma processing by-products move freely around in the chamber 102, following the process gas flow pattern and / or existing pressure gradients. During plasma processing operations that generate non-volatile and / or low volatility by-products (e.g., PZT etching or Pt etching processes, among others), the plasma processing by-products may enter the openings (e.g., openings 106A and 106B) formed through the walls 105 of the chamber 102 and deposit on the surfaces of the walls 105 within the openings. In low vacuum pressure plasma processes (e.g., PZT etching and Pt etching processes) where non-volatile and / or low volatility plasma processing by-products are formed, large amounts of by-product deposits may accumulate within the openings (e.g., 106A, 106B) formed through the walls 105 of the chamber 102. Cleaning / removal of the plasma processing by-products deposited within the openings may be difficult, time consuming, and expensive, at least in part, due to the stringent configuration of the openings. Also, physical / mechanical techniques must often be used to clean / remove the deposited plasma processing by-products from the openings, which increases the difficulty, time, and expense of the cleaning process. The time required to clean the plasma processing by-products from within the openings in the wall 105 adds to the overall chamber cleaning time, thereby increasing the mean time to clean (MTTC) of the chamber 102 and reducing the availability of the chamber 102 for semiconductor manufacturing operations.

[0182] Disclosed herein are various embodiments for insert liners that can be inserted into openings (e.g., openings 106A, 106B) formed through the walls 105 of the chamber 102 to provide protection for the surfaces of the walls 105 within the openings and to provide a sacrificial surface onto which plasma processing by-products may deposit without depositing on the surfaces of the walls 105 within the openings. For example, FIG. 21 illustrates an insert liner 2101 configured for insertion into opening 106A and an insert liner 2103 configured for insertion into opening 106B, according to some embodiments. FIG. 22 illustrates an isometric view of insert liner 2101, according to one embodiment of the present invention. FIG. 23 illustrates an isometric view of insert liner 2103, according to one embodiment of the present invention.

[0183] In some embodiments, the insert liners 2101, 2103 may be fabricated from sheet metal, such as hard anodized aluminum sheet metal (e.g., 5056 sheet metal aluminum). The sheet metal may be cut and bent into a configuration that conforms to the openings 106A, 106B through the walls 105 of the chamber 102 in which the insert liners are placed. In some embodiments, the insert liners 2101, 2103 are formed from sheet metal having a thickness in the range of about 0.030 inches (about 0.762 millimeters) to about 0.090 inches (about 2.286 millimeters). In some embodiments, the insert liners 2101, 2103 may be formed from plate metal (such as hard anodized aluminum plate), which may be cut and welded into a configuration that conforms to the openings 106A, 106B through the walls 105 of the chamber 102 in which the insert liners are placed. The insert liners 2101, 2103 are formed to substantially cover the surfaces of the walls 105 within the openings 106A, 106B.

[0184] In some embodiments, as shown in Figures 22 and 23, the insert liners 2101, 2103 may be formed to have a continuous structure (i.e., a closed shape) that surrounds the vertical cross-section of the openings 106A, 106B when inserted into the openings 106A, 106B. However, in some embodiments, the insert liners 2101, 2103 may be formed to have a discontinuous structure. For example, Figure 24 shows an insert liner 2101A, which is a variation of the insert liner 2101, according to some embodiments, where the insert liner 2101A is cut open on a vertical side of the insert liner 2101A to form a gap 2401. The gap 2401 separates a first end of the insert liner 2101A from a second end of the insert liner 2101A such that the gap 2401 forms a discontinuity in the outer surface profile of the insert liner 2101A. The gap 2401 provides the insert liner 2101A with mechanical flexibility against compression of the outer surface profile of the insert liner 2101A to allow insertion of the insert liner 2101A into the opening 106A.

[0185] In some embodiments, the insert liner 2101A has a spring characteristic that allows the insert liner 2101A to push outward against the surface of the wall 105 when the insert liner 2101A is inserted into the opening 106A. For example, if the insert liner 2101A is made of sheet metal, the sheet metal can be bent such that the insert liner 2101A exerts a spring force against the surface of the wall 105 when the insert liner 2101A is inserted into the opening 106A. In these embodiments, the gap 2401 allows for compression of the insert liner 2101A to facilitate insertion and removal of the insert liner 2101A into and from the opening 106A. In some embodiments, the insert liner 2101A with the gap 2401 can be compressed by hand. Also, in some embodiments, one or more surfaces of the insert liner 2101A may have a convex shape that enhances the spring force applied against the surface of the wall 105 upon insertion of the insert liner 2101A into the opening 106A. For example, FIG. 25 is a front view of an insert liner 2101B, which is a variation of the insert liner 2101A with a convex region 2501 formed on a top surface of the insert liner 2101B, according to some embodiments. The example insert liner 2101B also includes a gap 2401. It should be understood that in some embodiments, the insert liner 2103 may be configured to include a gap, such as the gap 2401, and / or to include a convex region, such as the convex region 2501. In some embodiments, the insert liners 2101, 2101A, 2101B, 2103 are configured to have sufficient mechanical flexibility to compress the outer surface profile of the insert liner to allow insertion of the insert liner into the openings 106A, 106B.

[0186] The insert liners (e.g., 2101, 2101A, 2101B, 2103) are configured such that when installed within the openings 106A, 106B, the required clearance is maintained through the openings 106A, 106B. It should be understood that the insert liners (e.g., 2101, 2101A, 2101B, 2103) can be installed within the openings 106A, 106B without the use of hardware fasteners, adhesives, or other locking / securing devices because the insert liners are stationary parts and the spring force exerted by the insert liners against the walls 105 of the chamber 102 is sufficient to hold the insert liners within the openings 106A, 106B during operation of the chamber 102.

[0187] Also, in some plasma processing operations, a pre-existing opening (e.g., 106B) formed through the wall 105 of the chamber 102 may not be needed. For this situation, the insert liner may be configured to completely block the opening upon insertion of the insert liner into the opening. For example, FIG. 26 shows an insert liner 2601 configured to insert into the opening 106B and with a vertical surface 2603 that blocks the opening 106B with an inner surface of the wall 105 of the chamber 102, according to some embodiments. In some embodiments, the insert liner 2601 is formed of sheet metal, as described above with respect to the insert liners 2101, 2103. Also, in some embodiments, the insert liner 2601 may be formed with a gap 2605 (similar to gap 2401) cut through the vertical side to allow compression of the insert liner 2601 to facilitate insertion and removal of the insert liner 2601 into and from the opening 106B. Also, in some embodiments, the insert liner 2601 may be formed with one or more convex areas (similar to convex area 2501) to provide / enhance the spring force exerted by the insert liner 2601 against the wall 105 in the opening 106B.

[0188] FIG. 27 also shows an insert liner 2701 with a vertical surface 2703 that substantially covers the surface of the window 108 exposed through the opening 106B, according to some embodiments. The insert liner 2701 can be utilized when the opening 106B is not required. In some embodiments, the insert liner 2701 is formed of sheet metal, as described above with respect to the insert liners 2101, 2103. Also, in some embodiments, the insert liner 2701 can be formed with gaps 2705 (similar to the gaps 2401) cut through the vertical sides to allow compression of the insert liner 2701 to facilitate insertion and removal of the insert liner 2701 into and from the opening 106B. Also, in some embodiments, the insert liner 2701 can be formed with one or more convex regions (similar to the convex regions 2501) to provide / enhance the spring force exerted by the insert liner 2701 against the wall 105 in the opening 106B.

[0189] 28 further illustrates an insert liner 2801 with a first vertical surface 2803 that substantially covers the surface of the window 108 exposed through the opening 106B and a second vertical surface 2805 that blocks the opening 106B with the inner surface of the wall 105 of the chamber 102, according to some embodiments. The insert liner 2801 can be utilized when the opening 106B is not needed. In some embodiments, the insert liner 2801 is formed of sheet metal, as described above with respect to the insert liners 2101, 2103. Also, in some embodiments, the insert liner 2801 can be formed with a gap 2807 (similar to the gap 2801) cut through the vertical side to allow compression of the insert liner 2801 to facilitate insertion and removal of the insert liner 2801 into and from the opening 106B. Also, in some embodiments, the insert liner 2801 may be formed with one or more convex areas (similar to convex area 2501) to provide / enhance the spring force exerted by the insert liner 2801 against the wall 105 in the opening 106B.

[0190] In some embodiments, the insert for opening 106A may be configured as a solid plug. FIG. 29 shows an insert plug 2901 configured to fit snugly within opening 106B and provide continuity of the profile of the inner surface of wall 105 of chamber 102, according to some embodiments. Insert plug 2901 can be used when opening 106B is not needed. In some embodiments, insert plug 2901 is machined from a block of aluminum or other suitable material that is chemically, mechanically, thermally, and electrically compatible for use within chamber 102.

[0191] In some embodiments, the insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or the insert plugs 2901 may be configured as disposable components that can be removed and discarded during cleaning of the clamper 102. For example, the insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801 may be considered consumable components if they are manufactured from a low-cost material, such as hard anodized aluminum sheet metal. However, in some embodiments, the insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or the insert plugs 2901 may be cleaned and repaired for reuse in the chamber 102.

[0192] The insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and the insert plug 2901 have process-exposed surfaces that are fluidly exposed to the interior region of the chamber 102 when the insert liners are inserted into the openings 106A, 106B. The process-exposed surfaces may be tailored to promote adhesion of plasma processing by-products to the process-exposed surfaces. In some embodiments, the insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or the insert plug 2901 may be formed to have a predetermined average surface roughness (Ra) that promotes adhesion and retention of plasma processing by-products. In some embodiments, the insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or the insert plugs 2901 have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or the insert plugs 2901 may be formed with a surface coating, such as a yttria coating or an anodized coating, among others.

[0193] It should be appreciated that the utilization of insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or insert plugs 2901 in a plasma etch chamber is particularly advantageous due to the large amount of non-volatile and / or low volatile by-products that are generated during etch processes, particularly during PZT and Pt etches. Insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and insert plugs 2901 provide a low-cost, easy-to-maintain solution for managing plasma processing by-product deposition in openings (e.g., 106A, 106B) formed through walls 105 of chamber 102. It should be appreciated that with the utilization of the insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or the insert plugs 2901, technicians no longer need to spend significant time cleaning hard-to-reach surfaces of the walls 105 in the openings 106A, 106B during cleaning of the chamber 102. Rather, technicians need only remove and replace the insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or the insert plugs 2901. Thus, the insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or the insert plugs 2901 reduce the mean time to clean (MTTC) of the chamber 102, thereby reducing operating costs and improving the manufacturing throughput of the substrates 101. In some embodiments, the time required to clean the surfaces of the walls 105 within the openings 106A, 106B is reduced by 50% or more. The utilization of the insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or insert plugs 2901 also helps reduce particle generation within the chamber 102 because particles that may become dislodged during subsequent operation of the chamber 102 do not remain trapped within the openings 106A, 106B.Additionally, the insert liners 2101, 2101A, 2101B help trap by-products that accumulate within the opening 106A, thereby preventing leakage through the access control device 1301 and helping to maintain the integrity of the vacuum within the chamber 102.

[0194] 30 is a flow chart illustrating a method for plasma processing of a substrate, according to some embodiments. The method includes an operation 3001 for preparing a plasma processing chamber (i.e., chamber 102) with a plasma processing region 109 in which plasma is generated during operation of the chamber 102. The chamber 102 includes a wall 105 that forms a portion of an enclosure around the plasma processing region 109. The wall 105 includes a port (e.g., openings 106A, 106B) formed therethrough. In some embodiments, the port is a substrate access port through which the substrate 101 is inserted and removed from the chamber 102. In some embodiments, the port is a viewport configured to allow observation of the plasma processing region 109.

[0195] The method includes an operation 3003 for placing an insert liner (e.g., insert liner 2101, 2101A, 2101B, 2103, 2601, 2701, 2801) in the port. The insert liner is configured to cover an inner surface of the port. The insert liner is shaped to substantially cover the inner surface of the port when the insert liner is placed in the port. In some embodiments, the insert liner includes a process exposure surface that is fluidly exposed to the plasma processing region 109 when the insert liner is placed in the port, the process exposure surface being configured to promote deposition of plasma processing by-products on the process exposure surface. In some embodiments, the insert liner is configured to surround an open space in the port and provide a view through the open space in the port when the insert liner is placed in the port. In some embodiments, the insert liner is configured to surround an open space in the port and cover an outer boundary of the open space in the port proximate an outer surface of the wall 105 of the chamber 102 when the insert liner is disposed in the port. In some embodiments, the insert liner is configured to surround an open space in the port and cover an inner boundary of the open space in the port proximate an inner surface of the wall 105 of the chamber 102 when the insert liner is disposed in the port. In some embodiments, the insert liner is configured to cover a portion of the inner surface of the wall 105 of the chamber 102 around the port when the insert liner is disposed in the port. In some embodiments, operation 3003 includes placing an insert plug (e.g., insert plug 2901) in the port.

[0196] The insert liner is configured to apply a spring force against an inner surface of the port to hold the insert liner in place within the port. In some embodiments, the spring force applied by the insert liner against the inner surface of the port is sufficient to physically secure the insert liner within the port without utilizing an additional securing mechanism. In some embodiments, operation 3003 includes compressing an outer surface profile of the insert liner to allow insertion of the insert liner into the port and releasing the compression of the outer surface profile of the insert liner such that the insert liner applies a spring force against the inner surface of the port. In some embodiments, the insert liner comprises a first end separated from a second end by a gap that forms a discontinuity in the outer surface profile of the insert liner. In these embodiments, operation 3003 may include compressing an outer surface profile of the insert liner to close the gap to allow insertion of the insert liner into the port.

[0197] The method further includes an operation 3005 for generating a plasma in the plasma processing region 109 upon exposure to the substrate 1001, where constituents of the plasma interact with a material on the substrate 101 to generate plasma processing by-products. In some embodiments, the material on the substrate 101 is a lead zirconate titanate (PZT) film. In some embodiments, the material on the substrate 101 is a platinum (Pt) film. In some embodiments, the material on the substrate 101 is a film that causes a large amount of by-product deposition in the chamber 102 when exposed to the plasma generated in operation 3005. The insert liner prevents the plasma processing by-products from contacting the interior surface of the port. Also, in some embodiments, some of the plasma processing by-products adhere to the insert liner.

[0198] In some embodiments, generating the plasma in operation 3005 may include applying radio frequency power to the process gas in the plasma processing region 109. In some embodiments, the radio frequency power applied may be in a range between about 400 W and about 1250 W. However, it should be understood that in various embodiments, the radio frequency power applied may be less than 400 W or greater than 1250 W. In some embodiments, the radio frequency power is applied by a radio frequency signal having a frequency of about 13.56 MHz. However, it should be understood that in various embodiments, the radio frequency power may be applied by a radio frequency signal having a frequency different from 13.56 MHz. And, in some embodiments, the method may include an operation for generating a bias voltage at the substrate support structure 103. In some embodiments, the bias voltage is generated in a range between about 100 V and about 600 V. However, it should be understood that in various embodiments, the bias voltage may be less than 100 V or greater than 600 V. And, in some embodiments, the bias voltage may be generated by a radio frequency signal having a frequency of about 13.56 MHz. However, it should be understood that in various embodiments, the bias voltage may be generated by a radio frequency signal having a frequency different from 13.56 MHz, and in various embodiments, the bias voltage may be generated by a DC source.

[0199] Additionally, in some embodiments, the method may include operations for maintaining a temperature of the substrate support structure 103 within a range between about 40° C. and about 100° C., although it should be understood that in various embodiments, the temperature of the substrate support structure 103 may be maintained below 40° C. or above 100° C. Additionally, in some embodiments, the method may include operations for maintaining a pressure within the plasma processing region 109 within a range between about 5 milliTorr and about 50 milliTorr, although it should be understood that in various embodiments, the pressure within the plasma processing region 109 may be maintained below 5 milliTorr or above 50 milliTorr.

[0200] In some embodiments, generating the plasma in operation 3005 comprises supplying a process gas to the plasma processing region 109, where the process gas is one or more of chlorine (Cl2), boron trichloride (BCl3), argon (Ar), carbon tetrafluoride (CF4), oxygen (O2), trifluoromethane (CHF3), and sulfur hexafluoride (SF6). In some embodiments, generating the plasma in operation 3005 comprises supplying chlorine (Cl2) to the plasma processing region 109 at a flow rate in a range between about 20 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 3005 comprises supplying boron trichloride (BCl3) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 3005 comprises supplying argon (Ar) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 3005 includes providing carbon tetrafluoride (CF4) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 200 sccm. In some embodiments, generating the plasma in operation 3005 includes providing oxygen (O2) to the plasma processing region 109 at a flow rate in a range between about 20 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 3005 includes providing trifluoromethane (CHF3) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm. In some embodiments, generating the plasma in operation 3005 includes providing sulfur hexafluoride (SF6) to the plasma processing region 109 at a flow rate in a range between about 50 sccm and about 300 sccm.

[0201] 31 is a flow chart illustrating a method for fabricating an insert liner (e.g., insert liner 2101, 2101A, 2101B, 2103, 2601, 2701, 2801) for a plasma processing chamber (e.g., chamber 102) according to some embodiments. The method includes an operation 3101 for forming an insert liner to cover an inner surface of a port (e.g., openings 106A, 106B) formed through a wall 105 of the chamber 102. The insert liner is configured to have sufficient mechanical flexibility for compression of an outer surface profile of the insert liner to allow insertion of the insert liner into the port. The insert liner is configured to apply a spring force against an inner surface of the port upon release of compression of the outer surface profile of the insert liner.

[0202] Returning to FIG. 1B , during operation of the chamber 102, process gas is drawn by the pump 123 from the plasma processing region 109 through the exhaust passage 121 and duct / plumbing 122 to the pump 123. Non-volatile and / or low volatility plasma process by-products may be entrained in the process gas flow moving through the exhaust passage 121 and duct / plumbing 122 to the pump 123. As the system 100 is operated, the plasma process by-products may build up in the exhaust passage 121 and duct / plumbing 122 and the pump 123. In some embodiments, the pump 123 is a turbomolecular pump with a rotor with turbine blades. Over time, the plasma process by-products may clog the turbine blades of the pump 123, which may cause the rotor's motion mechanism to seize, resulting in increased operating temperatures of the pump 123, increased power consumption, friction, wear, premature failure, and overall failure of the pump 123. Therefore, there is an interest in reducing the amount of non-volatile and / or low volatility plasma processing by-products that reach the pump 123, especially in plasma processes that generate large amounts of such by-product materials (such as PZT etch and Pt etch processes).

[0203] FIG 32 illustrates an example exhaust baffle assembly 3200 disposed in the exhaust flow path 121 of the exhaust assembly 119, according to some example embodiments. In FIG 32, the exhaust assembly 119 is illustrated semi-transparently to allow the exhaust baffle assembly 3200 to be seen. FIG 33 illustrates the exhaust baffle assembly 3200 disposed in the exhaust flow path 121 proximate the chamber 102, according to some embodiments. A cutaway view of the exhaust assembly 119 is shown in FIG 33 so that the exhaust baffle assembly 3200 can be seen. FIG 34 illustrates a vertical cross-sectional view through the chamber 102, the exhaust assembly 119, and the exhaust baffle assembly 3200, showing how the exhaust baffle assembly 3200 is disposed at the exhaust outlet from the chamber 102, according to some embodiments.

[0204] In general, the exhaust baffle assembly 3200 functions to extend the operational life of the pump 123 by reducing the risks associated with downstream deposition of non-volatile and / or low volatility plasma processing by-products. It should be appreciated that by installing the exhaust baffle assembly 3200 in the exhaust flow path 121 between the chamber 102 and the pump 123, a redundant exhaust flow path is created, with the exhaust baffle assembly 3200 functioning to contact and capture non-volatile and / or low volatility plasma processing by-products entrained in the exhaust stream. Additionally, the surface texture and shape of the exhaust baffle assembly 3200 may be configured to promote adhesion and retention of non-volatile and / or low volatility plasma processing by-products on the exhaust baffle assembly 3200 until a cleaning process of the chamber 102 is performed. During cleaning of the chamber 102, the exhaust baffle assembly 3200 can be removed for cleaning and a new / clean exhaust baffle assembly 3200 can be installed.

[0205] FIG. 35 is an isometric view of an example exhaust baffle assembly 3200, according to some embodiments. The exhaust baffle assembly 3200 includes a top bar 3501, a bottom bar 3503, a first vertical support 3505A, a second vertical support 3505B, and five baffle members 3507A-E. FIG. 36 is a front view of the exhaust baffle assembly 3200, according to some embodiments. FIG. 37 is a side view of the exhaust baffle assembly 3200, according to some embodiments. In some embodiments, the exhaust baffle assembly 3200 is configured such that the baffle members 3507A-E are inserted into slots / notches formed in the first vertical support 3505A and the second vertical support 3505B, each of which is secured to both the top bar 3501 and the bottom bar 3503. In various embodiments, each of the first vertical support 3505A and the second vertical support 3505B may be secured to both the top bar 3501 and the bottom bar 3503 by welding or by fasteners such as mechanical screws, or by a combination thereof. It can be seen from Figures 36 and 37 that essentially all of the exhaust flow from the plasma processing region 109 is redirected by the combination of baffle members 3507A-3507E. Thus, in some embodiments, the combination of baffle members 3507A-3507E is configured to span essentially all of the flow path through the exhaust flow passage 121 transverse to the primary exhaust flow direction 3701.

[0206] It should be understood that in various embodiments, the exhaust baffle assembly 3200 can be configured with one or more baffle members (e.g., 3507A-3507E). In various embodiments, the exhaust baffle assembly 3200 can have fewer or more than five baffle members (e.g., 3507A-3507E). The baffle members 3507A-3507E are configured to redirect the exhaust flow such that plasma processing by-products within the exhaust flow impinge on the baffle members 3507A-3507E. In some embodiments, the baffle members 3507A-3507E are oriented at an angle of about 45 degrees relative to the primary exhaust flow direction 3701, as shown in FIG. 37. However, it should be understood that in various embodiments, the baffle members 3507A-3507E can be oriented at an angle other than 45 degrees relative to the primary exhaust flow direction 3701. In some embodiments, the baffle members 3507A-3507E may be oriented at an angle relative to the primary exhaust flow direction 3701 within a range of about 25 degrees to about 75 degrees. Further, in some embodiments, each baffle member 3507A-3507E is oriented at substantially the same angle relative to the primary exhaust flow direction 3701. However, in some embodiments, different baffle members 3507A-3507E may be oriented at different angles relative to the primary exhaust flow direction 3701. Also, in some embodiments, the angle of one or more of the baffle members 3507A-3507E is adjustable.

[0207] Also, as shown in FIG. 37, in some embodiments, adjacent ones of the baffle members 3507A-3507E may be positioned according to a substantially equal vertical separation distance 3703. However, in some embodiments, the vertical separation distance 3703 may be different between different adjacent ones of the baffle members 3507A-3507E. Also, as shown in FIG. 35, in some embodiments, each baffle member 3507A-3507E has substantially the same shape and size. However, in some embodiments, the shape and / or size of the different baffle members 3507A-3507E may be different. The shape, size, and relative position of the baffle members 3507A-3507E may be specified to optimize the capture of exhaust flow and by-products entrained therein by the exhaust baffle assembly 3200 while ensuring that sufficient exhaust flow rate is maintained and that the pump 123 is not overloaded due to exhaust flow area restriction caused by the exhaust baffle assembly 3200. In some embodiments, the exhaust baffle assembly 3200 is configured to reduce the normal open cross-sectional flow area in the exhaust flow passage 121 by an amount in the range of about 20% to about 30%.

[0208] In some embodiments, the exhaust baffle assembly 3200 is formed of aluminum or hard anodized aluminum. However, it should be understood that in various embodiments, the exhaust baffle assembly 3200 may be formed of essentially any material that is chemically, mechanically, thermally, and electrically suitable for exposure to the exhaust flow in the exhaust flow path 121. Also, in some embodiments, the surface of the exhaust baffle assembly 3200 may be tailored to promote adhesion of plasma processing by-products to the surface of the exhaust baffle assembly 3200. In some embodiments, the exhaust baffle assembly 3200 may be formed to have a predetermined average surface roughness (Ra) that promotes adhesion and retention of plasma processing by-products. In some embodiments, the surface of the exhaust baffle assembly 3200 has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. Also, in some embodiments, the exhaust baffle assembly 3200 may be formed to have a surface coating, such as a yttria coating or an anodized coating, among others.

[0209] According to some embodiments, the surface of the exhaust baffle assembly 3200 is roughened by media blasting. In various embodiments, the media blasting can be defined and performed to increase the surface roughness, create a high contact angle on the surface, and increase the overall surface area of ​​the exhaust baffle assembly 3200. In various embodiments, the media blasting can be defined and performed to affect the surface of the exhaust baffle assembly 3200 with media including one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and strahlulus, among other media types. It should be appreciated that in some embodiments, the media blasting can impart a predetermined roughness / texture substantially uniformly on the surface of the exhaust baffle assembly 3200.

[0210] In various embodiments, the exhaust baffle assembly 3200 can be configured to be introduced into the exhaust flow path 121 with or without a fastener. In some embodiments, the exhaust baffle assembly 3200 is configured to engage one or more corresponding structures in the exhaust flow path 121 such that the exhaust baffle assembly 3200 is held in place by one or more corresponding structures in the exhaust flow path 121 without the use of a fastener. For example, in some embodiments, the bottom bar 3503 can include a number of protrusions that fit into corresponding holes in the bottom of the exhaust flow path 121 just downstream from the chamber 102 and / or the top bar 3501 can include a number of protrusions that fit into corresponding holes in the top of the exhaust flow path 121 just downstream from the chamber 102.

[0211] The exhaust baffle assembly 3200 provides physical capture and retention of non-volatile and / or low volatility plasma processing by-products entrained in the exhaust flow passing from the plasma processing region 109 to the exhaust pump 123. Because the exhaust baffle assembly 3200 reduces the amount of non-volatile and / or low volatility plasma processing by-products migrating through the exhaust flow path 121 and ducts / plumbing 122, the exhaust baffle assembly 3200 functions to reduce the MTTC of the system 100, thereby reducing downtime of the chamber 102 and correspondingly increasing the manufacturing throughput of the substrates 101. Also, in some embodiments, the exhaust baffle assembly 3200 helps reduce the MTTC in the chamber 102, since it can be quickly removed and replaced with a clean exhaust baffle assembly 3200 during cleaning of the chamber 102. In some embodiments, the exhaust baffle assembly 3200 may be cleaned and refurbished for reuse, which provides reduced operating costs for the system 100.

[0212] Also, because the exhaust baffle assembly 3200 reduces the amount of non-volatile and / or low volatility plasma processing by-products entering the pump 123, the exhaust baffle assembly 3200 functions to extend the operational life of the pump 123 and reduce the likelihood of premature failure of the pump 123 due to ingress and deposition of by-products within the pump 123, particularly with respect to deposition of by-products on the vanes within the pump 123 and ingress of by-products into bearing areas within the pump 123. Furthermore, because the exhaust baffle assembly 3200 functions to trap a portion of the by-products, less by-product deposition on the vanes of the pump 123 allows the pump 123 to maintain a higher rotational speed for a longer operating time, which helps to maintain a target exhaust flow rate from the plasma processing region 109, thereby reducing process impact / drift due to insufficient and / or varying exhaust flow rates from the plasma processing region 109. Additionally, the exhaust baffle assembly 3200 functions to extend the mean time between cleanings (MTBC) of the chamber 102. Because operational issues with the pump 123 are often the reason for shutting down the chamber 102, utilizing the baffle assembly 3200 to help protect the pump 123 from by-product contamination can significantly increase chamber availability (e.g., to 90% or more) and reduce the replacement rate of the pump 123, which acts to reduce the operating costs of the system 100.

[0213] In some embodiments, an exhaust baffle assembly (e.g., 3200) comprises at least one baffle member (e.g., 3507A-3507E) configured to fit within an exhaust flow path (e.g., 121) of a plasma processing chamber (e.g., 102). The at least one baffle member is shaped to deflect a process exhaust gas flow when disposed within the exhaust flow path. An outer surface of the at least one baffle member is configured to promote attachment of plasma processing by-products present in the process exhaust gas flow to the at least one baffle member. In some embodiments, the at least one baffle member has a substantially flat surface oriented at an angle transverse to a direction of flow through the exhaust flow path when the at least one baffle member is disposed within the exhaust flow path. In some embodiments, the angle of the at least one baffle member is about 45 degrees relative to the direction of flow. In some embodiments, the angle of the baffle member is adjustable. In some embodiments, the at least one baffle member is formed of anodized aluminum. In some embodiments, at least one baffle member has an average surface roughness in the range of about 150 microinches to about 500 microinches.

[0214] In some embodiments, the exhaust baffle assembly (e.g., 3200) comprises a frame configured to hold at least one baffle member. In some embodiments, the frame comprises a bottom bar (e.g., 3503), a top bar (e.g., 3501), a first end bar (e.g., 3505A), and a second end bar (e.g., 3505B). The first end bar extends between the top bar and the bottom bar. And the second end bar extends between the top bar and the bottom bar. At least one baffle member extends from the first end bar to the second end bar. In some embodiments, the frame is formed of anodized aluminum. In some embodiments, the frame has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches.

[0215] In some embodiments, a plasma processing system (e.g., system 100) includes a plasma processing chamber (e.g., chamber 102) with a plasma processing region (e.g., 109) where plasma is generated during operation of the plasma processing chamber. The plasma processing system also includes an exhaust flow path (e.g., exhaust flow path 121) for the plasma processing chamber. The exhaust flow path is in fluid communication with the plasma processing region. The exhaust flow path is configured to direct a flow of process exhaust gases from the plasma processing region. The plasma processing system further includes a pump (e.g., pump 123) connected to the exhaust flow path. The pump is configured to apply a negative pressure to an interior of the exhaust flow path. The plasma processing system further includes an exhaust baffle assembly (e.g., exhaust baffle assembly 3200) disposed within the exhaust flow path. The exhaust baffle assembly includes at least one baffle member (e.g., 3507A-3507E) shaped to deflect the flow of process exhaust gases within the exhaust flow path. An outer surface of the at least one baffle member is configured to promote adhesion of plasma processing by-products present in the process exhaust gas flow to the at least one baffle member. In some embodiments, the exhaust baffle assembly is configured to extend across essentially the entire cross-sectional flow area within the exhaust flowpath such that the process exhaust gas flow from the plasma processing region must flow through the exhaust baffle assembly.

[0216] FIG. 38 is a flow chart illustrating a method for plasma processing of a substrate, according to some embodiments. The method includes an operation 3801 for providing a plasma processing system (e.g., system 100) including a plasma processing chamber (e.g., chamber 102) and an exhaust flow path (e.g., exhaust flow path 121) for the plasma processing chamber. The plasma processing chamber includes a plasma processing region (e.g., 109) where plasma is generated during operation of the plasma processing chamber. The exhaust flow path is fluidly connected to the plasma processing region. The exhaust flow path is configured to direct a process exhaust gas flow from the plasma processing region. The plasma processing system includes a pump (e.g., pump 123) connected to the exhaust flow path. The pump is configured to apply a negative pressure to an interior of the exhaust flow path. The plasma processing system includes an exhaust baffle assembly (e.g., exhaust baffle assembly 3200) disposed within the exhaust flow path. The exhaust baffle assembly includes at least one baffle member shaped to deflect the process exhaust gas flow within the exhaust flow path. The exterior surface of the at least one baffle member is adapted to promote adhesion of plasma processing by-products present in the process exhaust gas stream to the at least one baffle member.

[0217] In some embodiments, the exhaust baffle assembly is configured to extend across essentially the entire cross-sectional flow area within the exhaust flow passage such that process exhaust gas flow from the plasma processing region must flow through the exhaust baffle assembly. In some embodiments, the at least one baffle member has a substantially flat surface oriented at an angle transverse to the direction of primary exhaust flow through the exhaust flow passage. In some embodiments, the angle of the at least one baffle member is about 45 degrees relative to the direction of primary exhaust flow. In some embodiments, the angle of the at least one baffle member is adjustable. In some embodiments, the at least one baffle member is formed of anodized aluminum. In some embodiments, the at least one baffle member has an average surface roughness in the range of about 150 microinches to about 500 microinches.

[0218] The method further comprises an operation 3803 for generating a plasma in the plasma processing region upon exposure to the substrate. The method further comprises an operation 3805 for operating a pump to apply a negative pressure to an interior of the exhaust passage to draw a process exhaust gas flow from the plasma processing region to an exhaust passage through an exhaust baffle assembly in the exhaust passage. Constituents of the plasma interact with materials on the substrate to generate plasma processing by-products, and a portion of the plasma processing by-products adhere to at least one baffle member of the exhaust baffle assembly. In some embodiments, the material on the substrate is one or both of a lead zirconate titanate (PZT) film and a platinum (Pt) film.

[0219] FIG. 39 is a flow chart illustrating a method for fabricating an exhaust baffle assembly (e.g., exhaust baffle assembly 3200) for use in a plasma processing system (e.g., system 100), according to some embodiments. The method includes an operation 3901 for forming at least one baffle member (e.g., 3507A-3507E) to fit within an exhaust flow path (e.g., 121) of a plasma processing chamber (e.g., 102). The at least one baffle member is shaped to divert a process exhaust gas flow when disposed within the exhaust flow path. The method further includes an operation 3903 for conditioning an outer surface of the at least one baffle member to promote attachment of plasma processing by-products present in the process exhaust gas flow to the at least one baffle member. In some embodiments, the at least one baffle member is formed to have a substantially flat surface oriented at an angle transverse to a direction of a primary exhaust flow through the exhaust flow path when the at least one baffle member is disposed within the exhaust flow path. In some embodiments, the at least one baffle member has a substantially flat surface oriented at an angle transverse to the direction of primary exhaust flow through the exhaust flow passage. In some embodiments, the angle of the at least one baffle member is about 45 degrees relative to the direction of primary exhaust flow. In some embodiments, the angle of the at least one baffle member is adjustable. In some embodiments, the at least one baffle member is formed of anodized aluminum. In some embodiments, the at least one baffle member has an average surface roughness in the range of about 150 microinches to about 500 microinches.

[0220] In some embodiments, the method includes forming a frame for holding at least one baffle member. The frame includes a bottom bar (e.g., 3503), a top bar (e.g., 3501), a first end bar (e.g., 3505A), and a second end bar (e.g., 3505B). The first end bar extends between the top bar and the bottom bar. The second end bar extends between the top bar and the bottom bar. The at least one baffle member extends from the first end bar to the second end bar. In some embodiments, the frame is formed of anodized aluminum. In some embodiments, the frame has an average surface roughness in the range of about 150 microinches to about 500 microinches.

[0221] Although the invention has been described in some detail for purposes of clarity of understanding, it will be apparent that certain changes and modifications may be made within the scope of the appended claims. Accordingly, these embodiments are to be considered as illustrative and not restrictive, and the invention is not to be limited to the details set forth herein, but may be modified within the scope and equivalents of the described embodiments.

Claims

1. 1. A surface textured plasma processing chamber component comprising: a ceramic component configured to be disposed within a plasma processing chamber; the ceramic component comprising at least one roughened surface oriented for exposure to plasma processing by-products when the ceramic component is disposed in a plasma processing chamber during operation of the plasma processing chamber, the at least one roughened surface configured to promote adhesion of the plasma processing by-products to the ceramic component.

2. 10. The surface textured plasma processing chamber component of claim 1, wherein the ceramic component is formed of aluminum oxide.

3. 10. The surface-textured plasma processing chamber component of claim 1, wherein the at least one roughened surface has an average surface roughness in a range from about 150 microinches to about 500 microinches.

4. 10. The surface-textured plasma processing chamber component of claim 1, wherein the bare ceramic material forming the ceramic component is exposed on at least one roughened surface.

5. 10. The surface-textured plasma processing chamber component of claim 1, wherein the at least one rough surface is roughened by media blasting.

6. 6. The surface textured plasma processing chamber component of claim 5, wherein the media blasting affects the at least one roughened surface with media comprising one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and strahlulus.

7. 10. The surface-textured plasma processing chamber component of claim 1, wherein the at least one roughened surface is formed in part by a knurling process prior to firing of the ceramic component.

8. 2. The surface-textured plasma processing chamber component of claim 1, wherein the ceramic component is an upper window structure for installation in the plasma processing chamber, the upper window structure comprising a bottom surface, the bottom surface comprising at least one roughened region oriented for exposure to plasma processing by-products when the upper window structure is disposed in the plasma processing chamber during operation of the plasma processing chamber.

9. 10. The surface-textured plasma processing chamber component of claim 8, wherein the bottom surface comprises a peripheral ring-shaped region configured to engage a seal component, the at least one roughened region is surrounded by the peripheral ring-shaped region, the at least one roughened region is roughened to have an average surface roughness in a range of about 150 microinches to about 500 microinches, and the peripheral ring-shaped region is smoothed to have an average surface roughness of about 20 microinches.

10. 2. The surface-textured plasma processing chamber component of claim 1 , wherein the ceramic component is a liner structure for installation in the plasma processing chamber, the liner structure configured to extend around at least a portion of a plasma processing region in the plasma processing chamber, the liner structure having an inner surface, the at least one roughened surface, oriented for exposure to plasma processing by-products when the liner structure is disposed in the plasma processing chamber during operation of the plasma processing chamber.

11. 2. The surface-textured plasma processing chamber component of claim 1 , wherein the ceramic component is a ring structure for installation in the plasma processing chamber, the ring structure configured to surround a substrate support structure in the plasma processing chamber, the ring structure having at least one process exposure surface that is one or both of an inner surface and an upper surface of the ring structure, the at least one process exposure surface being the at least one roughened surface oriented for exposure to plasma processing by-products when the ring structure is positioned in the plasma processing chamber during operation of the plasma processing chamber.

12. 12. The surface-textured plasma processing chamber component of claim 11, wherein the ring structure is either a focus ring structure or an edge ring structure.

13. 1. A plasma processing chamber comprising: a substrate support structure configured to hold a substrate exposed to a plasma during operation of the plasma processing chamber; An upper window structure; Equipped with a plasma processing chamber, wherein the upper window structure is disposed above the substrate support structure to establish a plasma processing region between the substrate support structure and the upper window structure, the upper window structure being formed of a ceramic material, the upper window structure having a bottom surface facing toward the plasma processing region, the bottom surface having a surface roughness that promotes adhesion of plasma processing by-products to the bottom surface.

14. 14. The plasma processing chamber of claim 13, wherein the upper window structure is formed of aluminum oxide.

15. 14. The plasma processing chamber of claim 13, wherein the bottom surface of the upper window structure has an average surface roughness in a range from about 150 microinches to about 500 microinches.

16. 14. The plasma processing chamber of claim 13, wherein a ceramic bare material forming the upper window structure is exposed at the bottom surface of the upper window structure.

17. 14. The plasma processing chamber of claim 13 further comprising: a liner structure configured to extend around at least a portion of the plasma processing region within the plasma processing chamber; 1. A plasma processing chamber comprising: a liner structure formed of a ceramic material, the liner structure having an inner surface facing the plasma processing region, the inner surface having a surface roughness that promotes adhesion of plasma processing by-products to the inner surface.

18. 20. The plasma processing chamber of claim 17, wherein the liner structure is formed of aluminum oxide.

19. 20. The plasma processing chamber of claim 17, wherein the inner surface of the liner structure has an average surface roughness in a range from about 150 microinches to about 500 microinches.

20. 20. The plasma processing chamber of claim 17, wherein a ceramic bare material forming the liner structure is exposed at the inner surface of the liner structure.

21. 14. The plasma processing chamber of claim 13 further comprising: a ring structure configured to surround the substrate support structure within the plasma processing chamber; A plasma processing chamber, wherein the ring structure has at least one process exposed surface, which is one or both of an inner surface and an upper surface of the ring structure facing toward the plasma processing region, and the at least one process exposed surface has a surface roughness that promotes adhesion of plasma processing by-products to the at least one process exposed surface.

22. 22. The plasma processing chamber of claim 21, wherein the ring structure is one of a focus ring structure, a ground ring structure, or an edge ring structure.

23. 22. The plasma processing chamber of claim 21, wherein the ring structure is formed of aluminum oxide.

24. 22. The plasma processing chamber of claim 21, wherein the at least one process exposed surface of the ring structure has an average surface roughness in a range from about 150 microinches to about 500 microinches.

25. 22. The plasma processing chamber of claim 21, wherein a ceramic bare material forming the ring structure is exposed at the process exposure surface of the ring structure.

26. 14. The plasma processing chamber of claim 13 further comprising: a coil assembly disposed above the upper window structure; The coil assembly is configured to transmit radio frequency power through the upper window structure to the plasma processing region.

27. 1. A method for plasma processing of a substrate, comprising: providing a plasma processing chamber including a substrate support structure and an upper window structure, the substrate support structure configured to hold the substrate exposed to a plasma, the upper window structure disposed above the substrate support structure to establish a plasma processing region between the substrate support structure and the upper window structure, the upper window structure formed of a ceramic material, the upper window structure having a bottom surface facing the plasma processing region, the bottom surface having a surface roughness that promotes adhesion of plasma processing by-products to the bottom surface; generating a plasma in the plasma processing region, components of the plasma interacting with material on the substrate to generate plasma processing by-products, some of the plasma processing by-products depositing on the bottom surface of the upper window structure; A method comprising:

28. 28. The method of claim 27, wherein the material on the substrate is one or both of a lead zirconate titanate film and a platinum film.

29. 30. The method of claim 28, wherein generating the plasma comprises applying radio frequency power to a process gas in the plasma processing region, the radio frequency power being in a range from about 400 watts (W) to about 1250 W.

30. 30. The method of claim 29, wherein the radio frequency power is applied by a radio frequency signal having a frequency of about 13.56 MHz.

31. 30. The method of claim 29, further comprising: generating a bias voltage at the substrate support structure; The method, wherein the bias voltage is in the range of about 100V to about 600V.

32. 30. The method of claim 29, wherein the process gas is chlorine (Cl ２ ), boron trichloride (BCl ３ ), argon (Ar), carbon tetrafluoride (CF ４ ), oxygen (O ２ ), trifluoromethane (CHF ３ ), and sulfur hexafluoride (SF ６ ), the method being one or more of:

33. 33. The method of claim 32 further comprising: The method comprises maintaining a temperature of the substrate support structure within a range of about 40 degrees Celsius (°C) to about 80°C.

34. 33. The method of claim 32 further comprising: The method comprises maintaining a pressure within the plasma processing region within a range of about 5 milliTorr to about 50 milliTorr.

35. 30. The method of claim 29, wherein the process gas is chlorine (Cl) delivered to the plasma processing region at a flow rate in a range between about 20 standard cubic centimeters per minute (sccm) and about 300 sccm. ２ ), boron trichloride (BCl ), which is supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 300 sccm; ３ argon (Ar) supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 300 sccm; carbon tetrafluoride (CF) supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 200 sccm. ４ ), oxygen (O 2 ) supplied to the plasma processing region at a flow rate in the range of about 20 sccm to about 300 sccm. ２ ), trifluoromethane (CHF ３ ), and sulfur hexafluoride (SF) delivered to the plasma processing region at a flow rate in a range between about 50 sccm and about 300 sccm. ６ ),

36. 28. The method of claim 27, wherein the upper window structure is formed of aluminum oxide.

37. 28. The method of claim 27, wherein the bottom surface of the upper window structure has an average surface roughness in a range from about 150 microinches to about 500 microinches.

38. 28. The method of claim 27, wherein the ceramic bare material forming the upper window structure is exposed at the bottom surface of the upper window structure.

39. 28. The method of claim 27 further comprising:

11. The method of claim 10, further comprising: utilizing a liner structure in the plasma processing chamber, the liner structure configured to extend around at least a portion of the plasma processing region in the plasma processing chamber, the liner structure having an inner surface oriented for exposure to the plasma processing by-products, the inner surface of the liner structure having a surface roughness that promotes adhesion of the plasma processing by-products to the inner surface of the liner structure.

40. 40. The method of claim 39, wherein the liner structure is formed of aluminum oxide.

41. 40. The method of claim 39, wherein the inner surface of the liner structure has an average surface roughness in a range from about 150 microinches to about 500 microinches.

42. 40. The method of claim 39, wherein the ceramic bare material forming the liner structure is exposed at the inner surface of the liner structure.

43. 28. The method of claim 27 further comprising:

11. A method comprising: utilizing a ring structure in the plasma processing chamber, the ring structure configured to surround the substrate support structure in the plasma processing chamber, the ring structure having at least one process exposed surface that is one or both of an inner surface and an upper surface of the ring structure, the at least one process exposed surface being oriented for exposure to the plasma processing by-products, and the process exposed surface of the ring structure having a surface roughness that promotes adhesion of the plasma processing by-products to the process exposed surface of the ring structure.

44. 44. The method of claim 43, wherein the ring structure is one of a focus ring structure, a ground ring structure, or an edge ring structure.

45. 44. The method of claim 43, wherein the ring structure is formed of aluminum oxide.

46. 44. The method of claim 43, wherein the process exposed surface of the ring structure has an average surface roughness in a range from about 150 microinches to about 500 microinches.

47. 44. The method of claim 43, wherein the ceramic bare material forming the ring structure is exposed at the process exposure surface of the ring structure.

48. 1. A method for manufacturing a component for use in a plasma processing chamber, comprising: forming a ceramic component for installation in a plasma processing chamber, the ceramic component having at least one process-exposed surface; roughening the at least one treatment-exposed surface to have an average surface roughness in the range of about 150 microinches to about 500 microinches; A method comprising:

49. 49. The method of claim 48, wherein roughening the at least one treatment exposed surface is accomplished by media blasting.

50. 50. The method of claim 49, wherein the media blasting affects the at least one treatment exposed surface with media comprising one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite.

51. 49. The method of claim 48, wherein roughening the at least one process exposed surface is accomplished by a knurling process prior to firing the ceramic component.

52. 49. The method of claim 48, wherein the ceramic component is formed of aluminum oxide.

53. 49. The method of claim 48, wherein a ceramic bare material forming the ceramic component is exposed at the at least one process-exposed surface after roughening of the at least one process-exposed surface.

54. 49. The method of claim 48, wherein the ceramic component is one of an upper window structure, a liner structure, a focus ring structure, or an edge ring structure.

55. 1. A method for converting a coated component for use in a plasma processing chamber into a roughened component for use in said plasma processing chamber, comprising: stripping the coating from a ceramic component to a bare ceramic material forming the ceramic component, the ceramic component configured to be placed in a plasma processing chamber, the ceramic component having at least one process-exposed surface; roughening the at least one treatment-exposed surface to have an average surface roughness in the range of about 150 microinches to about 500 microinches; A method comprising:

56. 56. The method of claim 55, wherein roughening the at least one treatment exposed surface is accomplished by media blasting.

57. 57. The method of claim 56, wherein the media blasting affects the at least one treatment exposed surface with media comprising one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite.

58. 56. The method of claim 55, wherein the ceramic component is formed of aluminum oxide.

59. 56. The method of claim 55, wherein the ceramic bare material forming the ceramic component is exposed at the at least one process-exposed surface after roughening of the at least one process-exposed surface.

60. 56. The method of claim 55, wherein the ceramic component is one of an upper window structure, a liner structure, a focus ring structure, or an edge ring structure.

61. 1. A focus ring for use in a plasma processing chamber, comprising: A ring structure formed of a ceramic material, 1. A focus ring comprising: a ring structure configured to surround a substrate support structure in a plasma processing chamber, the ring structure having an inner surface oriented to be exposed to plasma processing by-products when the ring structure is disposed in the plasma processing chamber during operation of the plasma processing chamber, the inner surface being formed to have controlled surface topography variations that promote adhesion of the plasma processing by-products to the inner surface.

62. 62. The focus ring of claim 61 , wherein the controlled surface topography variations comprise a grating of raised structures extending inwardly toward an area enclosed by the ring structures.

63. 63. The focus ring of claim 62, wherein the lattice of the convex structure is one or more of a square lattice, a hexagonal lattice, a rectangular lattice, a parallelogram lattice, and a rhombic lattice.

64. 63. The focus ring of claim 62, wherein each raised structure has a dome shape.

65. 63. The focus ring of claim 62, wherein a spacing between adjacent raised structures is within a range of about 0.5 millimeters to about 2 millimeters.

66. 63. The focus ring of claim 62, wherein a spacing between adjacent raised structures is about 1 millimeter.

67. 63. The focus ring of claim 62, wherein each raised structure extends inwardly toward the area enclosed by the ring structure a distance in the range of about 0.5 millimeters to about 2 millimeters, or a distance in the range of about 1 millimeter to about 2 millimeters, or a distance of about 1 millimeter.

68. 63. The focus ring of claim 62, wherein each convex structure has a base width in the range of about 1 millimeter to about 3 millimeters, or in the range of about 2 millimeters to about 3 millimeters, or about 2.5 millimeters.

69. 63. The focus ring of claim 62, wherein the inner surface has an average surface roughness in the range of about 150 microinches to about 500 microinches.

70. 62. The focus ring of claim 61 , wherein the ring structure is formed of aluminum oxide.

71. 62. The focus ring of claim 61 , wherein the ring structure is a hollow right cylinder.

72. 72. The focus ring of claim 71, further comprising: three radially extending structures configured to extend radially outward from an outer surface of the ring structure; the three radially extending structures are spaced along a circumference of the ring structure, the three radially extending structures being configured to engage three respective lift components to enable the ring structure to be raised and lowered relative to the substrate support structure when the ring structure is disposed within the plasma processing chamber.

73. 73. The focus ring of claim 72, wherein said inner surface of said ring structure, a top surface of said ring structure, and top surfaces of said three radially extending structures have an average surface roughness in the range of about 150 microinches to about 500 microinches.

74. 1. A plasma processing chamber comprising: a substrate support structure configured to hold a substrate exposed to a plasma during operation of the plasma processing chamber; a focus ring having a ring structure formed of a ceramic material; Equipped with 1. A plasma processing chamber, comprising: a ring structure configured to surround the substrate support structure within the plasma processing chamber, the ring structure having an inner surface oriented to be exposed to plasma processing by-products during operation of the plasma processing chamber, the inner surface being formed to have controlled surface topography variations that promote adhesion of the plasma processing by-products to the inner surface.

75. 75. The plasma processing chamber of claim 74, wherein the controlled surface topography variations comprise a grating of raised structures extending inwardly toward an area enclosed by the ring structure.

76. 76. The plasma processing chamber of claim 75, wherein the lattice of the convex structure is one or more of a square lattice, a hexagonal lattice, a rectangular lattice, a parallelogram lattice, and a rhombic lattice.

77. 76. The plasma processing chamber of claim 75, wherein each raised structure has a dome shape.

78. 76. The plasma processing chamber of claim 75, wherein a spacing between adjacent raised structures is in a range from about 0.5 millimeters to about 2 millimeters.

79. 76. The plasma processing chamber of claim 75, wherein a spacing between adjacent raised structures is about 1 millimeter.

80. 76. The plasma processing chamber of claim 75, wherein each convex structure extends inwardly toward the area surrounded by the ring structure a distance in a range of about 0.5 millimeters to about 2 millimeters, or a distance in a range of about 1 millimeter to about 2 millimeters, or a distance of about 1 millimeter.

81. 76. The plasma processing chamber of claim 75, wherein each convex structure has a base width in the range of about 1 millimeter to about 3 millimeters, or in the range of about 2 millimeters to about 3 millimeters, or about 2.5 millimeters.

82. 76. The plasma processing chamber of claim 75, wherein the inner surface has an average surface roughness in a range from about 150 microinches to about 500 microinches.

83. 75. The plasma processing chamber of claim 74, wherein the ring structure is formed from aluminum oxide.

84. 75. The plasma processing chamber of claim 74, wherein the ring structure is a hollow right cylinder.

85. 85. The plasma processing chamber of claim 84, further comprising: three radially extending structures configured to extend radially outward from an outer surface of the ring structure; A plasma processing chamber, wherein the three radially extending structures are spaced along an outer periphery of the ring structure, and the three radially extending structures are configured to engage with three respective lift components to enable raising and lowering of the ring structure relative to the substrate support structure.

86. 86. The plasma processing chamber of claim 85, wherein the inner surface of the ring structure, the top surface of the ring structure, and the top surfaces of the three radially extending structures have an average surface roughness in a range from about 150 microinches to about 500 microinches.

87. 1. A method for plasma processing of a substrate, comprising: providing a plasma processing chamber with a substrate support structure and a focus ring, the focus ring comprising a ring structure formed of a ceramic material, the ring structure configured to surround the substrate support structure in the plasma processing chamber, the ring structure having an inner surface oriented for exposure to plasma processing by-products during operation of the plasma processing chamber, the inner surface formed to have controlled surface topography variations that promote adhesion of the plasma processing by-products to the inner surface; generating a plasma in a plasma processing region above the substrate support structure, components of the plasma interacting with material on the substrate to generate plasma processing by-products, some of the plasma processing by-products depositing on the inner surface of the ring structure; A method comprising:

88. 88. The method of claim 87, wherein the material on the substrate is one or both of a lead zirconate titanate film and a platinum film.

89. 90. The method of claim 88, wherein generating the plasma comprises applying radio frequency power to a process gas in the plasma processing region, the radio frequency power being in a range from about 400 watts (W) to about 1250 W.

90. 90. The method of claim 89, wherein the radio frequency power is applied by a radio frequency signal having a frequency of about 13.56 MHz.

91. 90. The method of claim 89, further comprising: The method comprises generating a bias voltage on the substrate support structure, the bias voltage being in a range of about 100V to about 600V.

92. 90. The method of claim 89, wherein the process gas is chlorine (Cl ２ ), boron trichloride (BCl ３ ), argon (Ar), carbon tetrafluoride (CF ４ ), oxygen (O ２ ), trifluoromethane (CHF ３ ), and sulfur hexafluoride (SF ６ ), the method being one or more of:

93. 93. The method of claim 92, further comprising: The method comprises maintaining a temperature of the substrate support structure within a range of about 40 degrees Celsius (°C) to about 80°C.

94. 93. The method of claim 92, further comprising: The method comprises maintaining a pressure within the plasma processing region within a range of about 5 milliTorr to about 50 milliTorr.

95. 90. The method of claim 89, wherein the process gas is chlorine (Cl) supplied to the plasma processing region at a flow rate in a range between about 20 standard cubic centimeters per minute (sccm) and about 300 sccm. ２ ), boron trichloride (BCl ), which is supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 300 sccm; ３ argon (Ar) supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 300 sccm; carbon tetrafluoride (CF) supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 200 sccm. ４ ), oxygen (O 2 ) supplied to the plasma processing region at a flow rate in the range of about 20 sccm to about 300 sccm. ２ ), trifluoromethane (CHF ３ ), and sulfur hexafluoride (SF) delivered to the plasma processing region at a flow rate in a range between about 50 sccm and about 300 sccm. ６ ),

96. 88. The method of claim 87, wherein the ring structure is formed of aluminum oxide.

97. 88. The method of claim 87, wherein the inner surface of the ring structure has an average surface roughness in a range from about 150 microinches to about 500 microinches.

98. 88. The method of claim 87, wherein a ceramic bare material forming the ring structure is exposed at the inner surface of the ring structure.

99. 88. The method of claim 87, wherein the ring structure is a hollow right cylinder.

100. 100. The method of claim 99, wherein the focus ring comprises three radially extending structures configured to extend radially outward from an outer surface of the ring structure, the three radially extending structures being equally spaced along a circumference of the ring structure, the three radially extending structures configured to engage three respective lift components to enable raising and lowering of the ring structure relative to the substrate support structure.

101. 101. The method of claim 100, wherein the inner surface of the ring structure, the top surface of the ring structure, and the top surfaces of the three radially extending structures have an average surface roughness within a range of about 150 microinches to about 500 microinches.

102. 1. A method for manufacturing a focus ring for use in a plasma processing chamber, comprising: forming a ring structure of ceramic material configured to surround a substrate support structure in a plasma processing chamber, the ring structure having an inner surface oriented to be exposed to plasma processing by-products when the ring structure is disposed in the plasma processing chamber during operation of the plasma processing chamber; creating a controlled surface topography variation on the inner surface of the ring structure, the controlled surface topography variation promoting adhesion of the plasma processing by-products to the inner surface; A method comprising:

103. 103. The method of claim 102, wherein forming the controlled surface topography variations on the inner surface of the ring structure comprises performing a media blasting process through a mask deposited on the inner surface of the ring structure, the mask exposing portions of the inner surface of the ring structure that are eroded to form the controlled surface topography variations.

104. 104. The method of claim 103, wherein the media blasting affects the interior surface with media including one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite.

105. 104. The method of claim 103, further comprising: roughening the inner surface of the ring structure after forming the controlled surface topography variations on the inner surface of the ring structure, the roughening being performed to impart an average surface roughness to the inner surface of the ring structure within a range of about 150 microinches to about 500 microinches.

106. 106. The method of claim 105, wherein roughening the inner surface is accomplished by media blasting.

107. 103. The method of claim 102, wherein forming the controlled surface topography variations on the inner surface of the ring structure comprises performing a knurling process on the inner surface prior to firing of the ceramic material.

108. 103. The method of claim 102, wherein the ceramic material is aluminum oxide.

109. 103. The method of claim 102, wherein the ceramic material forming the ring structure is exposed at the inner surface after forming the controlled surface topography variations on the inner surface of the ring structure.

110. 103. The method of claim 102, wherein the ring structure is a hollow right cylinder.

111. 111. The method of claim 110, wherein forming the ring structure comprises forming three radially extending structures extending radially outward from an outer surface of the ring structure, the three radially extending structures being spaced apart along an outer periphery of the ring structure, the three radially extending structures being configured to engage three respective lift components to enable the ring structure to be raised and lowered relative to the substrate support structure when the ring structure is disposed within the plasma processing chamber.

112. 112. The method of claim 111 further comprising: roughening the inner surface of the ring structure after forming the controlled surface topography variations on the inner surface of the ring structure, the roughening being performed to impart an average surface roughness to the inner surface of the ring structure within a range of about 150 microinches to about 500 microinches; roughening an upper surface of the three radially extending structures to have an average surface roughness in a range from about 150 microinches to about 500 microinches; A method comprising:

113. 1. A substrate access port shield for use in a plasma processing chamber, comprising: The shield part and a first support portion extending from a first end of the shield portion and configured to engage a vertically movable component within a plasma processing chamber; a second support portion extending from a second end of the shield portion and configured to engage the vertically movable component within the plasma processing chamber; Equipped with a substrate access port shield, wherein the shield portion and the first and second support portions form an integral shield structure extending along an arc, vertical movement of the vertically movable component causes corresponding vertical movement of the integral shield structure, the shield portion configured to at least partially cover a substrate access port opening of the plasma processing chamber when the first and second support portions are engaged with the vertically movable component and the vertically movable component is in a lower vertical position, and the shield portion configured to not cover the substrate access port opening of the plasma processing chamber when the first and second support portions are engaged with the vertically movable component and the vertically movable component is in an upper vertical position.

114. 114. A substrate access port shield for use in a plasma processing chamber as recited in claim 113, wherein the shield portion is configured as a portion of a hollow right cylinder.

115. 115. A substrate access port shield for use in a plasma processing chamber as described in claim 114, wherein the shield portion has a vertical height measured in an axial direction of the hollow right cylinder, the vertical height of the shield portion enabling the shield portion to cover at least half of the vertical extent of the substrate access port opening of the plasma chamber when the first and second support portions are engaged with the vertically movable component and the vertically movable component is in a lower vertical position.

116. 115. A substrate access port shield for use in a plasma processing chamber as described in claim 114, wherein the shield portion has a vertical height measured in an axial direction of the hollow right cylinder, the vertical height of the shield portion enabling the shield portion to cover at least two-thirds of the vertical extent of the substrate access port opening of the plasma chamber when the first and second support portions are engaged with the vertically movable component and the vertically movable component is in a lower vertical position.

117. 115. A substrate access port shield for use in a plasma processing chamber as described in claim 114, wherein the shield portion has a vertical height measured in an axial direction of the hollow right cylinder, the vertical height of the shield portion enabling the shield portion to completely cover the vertical extent of the substrate access port opening of the plasma chamber when the first and second support portions are engaged with the vertically movable component and the vertically movable component is in the lower vertical position.

118. 114. A substrate access port shield for use in a plasma processing chamber as described in claim 113, wherein the shield portion is configured as a first portion of a hollow right cylinder, the first support portion is configured as a second portion of the hollow right cylinder, the second support portion is configured as a third portion of the hollow right cylinder, the shield portion has a first vertical height measured in an axial direction of the hollow right cylinder, the first support portion has a second vertical height measured in the axial direction of the hollow right cylinder, and the second support portion has a third vertical height measured in the axial direction of the hollow right cylinder.

119. 120. A substrate access port shield for use in a plasma processing chamber as recited in claim 118, wherein the first vertical height, the second vertical height, and the third vertical height are substantially equal.

120. 120. A substrate access port shield for use in a plasma processing chamber as recited in claim 118, wherein the first vertical height is different from each of the second vertical height and the third vertical height.

121. 121. A substrate access port shield for use in a plasma processing chamber as recited in claim 120, wherein the second vertical height and the third vertical height are substantially equal.

122. 119. A substrate access port shield for use in a plasma processing chamber as recited in claim 118, wherein the first vertical height is less than each of the second vertical height and the third vertical height.

123. 114. A substrate access port shield for use in a plasma processing chamber as recited in claim 113, wherein the unitary shield structure is formed from a ceramic material.

124. 124. A substrate access port shield for use in a plasma processing chamber as recited in claim 123, wherein the ceramic material is aluminum oxide.

125. 124. A substrate access port shield for use in a plasma processing chamber as described in claim 123, wherein at least an inner surface of the integral shield structure has an average surface roughness within a range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches).

126. 126. A substrate access port shield for use in a plasma processing chamber as recited in claim 125, wherein the ceramic material forming the unitary shield structure is exposed at the inner surface of the unitary shield structure.

127. 114. A substrate access port shield for use in a plasma processing chamber as recited in claim 113, wherein the vertically movable component is a focus ring structure.

128. 128. A substrate access port shield for use in a plasma processing chamber as recited in claim 127, wherein the focus ring structure is configured to surround a substrate support structure in the plasma processing chamber, the focus ring structure comprising a ring portion formed as a hollow right cylinder and three radially extending structures configured to extend radially outward from an outer surface of the ring portion, the three radially extending structures being spaced apart along an outer periphery of the ring portion, the first support portion configured to engage a first one of the three radially extending structures and the second support portion configured to engage a second one of the three radially extending structures.

129. 129. A substrate access port shield for use in a plasma processing chamber according to claim 128, wherein the three radially extending structures are configured to engage three respective lift components to enable raising and lowering of the combination of the focus ring structure and the integral shield structure relative to the substrate support structure.

130. 129. A substrate access port shield for use in a plasma processing chamber as described in claim 128, wherein the first support portion is configured to engage a third of the three radially extending structures.

131. 1. A plasma processing chamber comprising: a substrate support structure configured to hold a substrate exposed to a plasma during operation of the plasma processing chamber; a focus ring structure configured to surround the substrate support structure within the plasma processing chamber, the focus ring structure comprising: a ring portion formed as a hollow right cylinder and three radially extending structures configured to extend radially outward from an outer surface of the ring portion, the three radially extending structures spaced apart along an outer periphery of the ring portion; a unitary shield structure comprising a shield portion, a first support portion, and a second support portion, the first support portion extending from a first end of the shield portion, the first support portion configured to engage a first of the three radially extending structures of the focus ring structure, and the second support portion extending from a second end of the shield portion, the second support portion configured to engage a second of the three radially extending structures of the focus ring structure, the unitary shield structure being formed to extend along an arc, the shield portion configured to at least partially cover a substrate access port opening of the plasma processing chamber when the focus ring structure is in a lower vertical position, and the shield portion configured to not cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in an upper vertical position; A plasma processing chamber comprising:

132. 132. The plasma processing chamber of claim 131 , wherein the integral shield structure is removable from the focus ring structure.

133. 132. The plasma processing chamber of claim 131 , wherein the integral shield structure is gravity secured to the focus ring structure.

134. 132. The plasma processing chamber of claim 131 , wherein the integral shield structure connects to the focus ring structure without fasteners.

135. 132. The plasma processing chamber of claim 131 , wherein the first support portion comprises a slot configured to receive the first of the three radially extending structures of the focus ring structure, and the second support portion comprises a slot configured to receive the second of the three radially extending structures of the focus ring structure.

136. 132. The plasma processing chamber of claim 131 , wherein either the first support portion or the second support portion is configured to engage a third of the three radially extending structures of the focus ring structure.

137. 137. The plasma processing chamber of claim 136, wherein the first support portion comprises a slot configured to receive the first of the three radially extending structures of the focus ring structure, the second support portion comprises a slot configured to receive the second of the three radially extending structures of the focus ring structure, and either the first support portion or the second support portion comprises a slot configured to receive the third of the three radially extending structures of the focus ring structure.

138. 132. The plasma processing chamber of claim 131 further comprising: three lift components configured to respectively engage the three radially extending structures of the focus ring structure; a plasma processing chamber, the plasma processing chamber comprising: a first lift element configured to provide controlled vertical movement of a combination of the focus ring structure and the integral shield structure relative to the substrate support structure;

139. 132. The plasma processing chamber of claim 131 , wherein the shield portion of the integral shield structure is configured as a portion of a hollow right cylinder, the shield portion having a vertical height measured in an axial direction of the hollow right cylinder.

140. 140. The plasma processing chamber of claim 139, wherein the vertical height of the shield portion enables the shield portion to cover at least one-half of the vertical extent of the substrate access port opening of the plasma chamber when the focus ring structure is in the lower vertical position.

141. 140. The plasma processing chamber of claim 139, wherein the vertical height of the shield portion enables the shield portion to cover at least two-thirds of the vertical extent of the substrate access port opening of the plasma chamber when the focus ring structure is in the lower vertical position.

142. 140. The plasma processing chamber of claim 139, wherein the vertical height of the shield portion enables the shield portion to completely cover a vertical extent of the substrate access port opening of the plasma chamber when the focus ring structure is in the lower vertical position.

143. 132. The plasma processing chamber of claim 131, wherein the integral shield structure is formed from a ceramic material.

144. 144. The plasma processing chamber of claim 143, wherein the ceramic material is aluminum oxide.

145. 144. The plasma processing chamber of claim 143, wherein at least an inner surface of the integral shield structure has an average surface roughness in the range of about 150 microinches to about 500 microinches.

146. 146. The plasma processing chamber of claim 145, wherein the ceramic material forming the unitary shield structure is exposed at the inner surface of the unitary shield structure.

147. 1. A method for plasma processing of a substrate, comprising: Providing a plasma processing chamber having a substrate support structure, a focus ring structure, and an integral shield structure, the focus ring structure configured to surround the substrate support structure, the focus ring structure comprising a ring portion formed as a hollow right cylinder and three radially extending structures configured to extend radially outward from an outer surface of the ring portion, the three radially extending structures being spaced apart along an outer periphery of the ring portion, the integral shield structure comprising a shield portion, a first support portion, and a second support portion, the first support portion extending from a first end of the shield portion, the first support portion supporting the three radially extending structures of the focus ring structure. a first support portion extending from a second end of the shield portion, the second support portion configured to engage a second one of the three radially extended structures of the focus ring structure, the integral shield structure being formed to extend along an arc, the shield portion configured to at least partially cover a substrate access port opening of the plasma processing chamber when the focus ring structure is in a lower vertical position and the shield portion configured to not cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in an upper vertical position; placing the focus ring structure in the lower vertical position; generating a plasma in a plasma processing region above the substrate support structure; A method comprising:

148. 148. The method of claim 147, wherein the shield portion of the integral shield structure covers at least one-half of the vertical extent of the substrate access port opening when the focus ring structure is disposed in the lower vertical position.

149. 148. The method of claim 147, wherein the shield portion of the integral shield structure covers at least two-thirds of the vertical extent of the substrate access port opening when the focus ring structure is disposed in the lower vertical position.

150. 148. The method of claim 147, wherein the shield portion of the integral shield structure completely covers the vertical extent of the substrate access port opening when the focus ring structure is disposed in the lower vertical position.

151. 148. The method of claim 147, further comprising: connecting the integral shield structure to the focus ring structure without fasteners.

152. 152. The method of claim 151 , wherein the integral shield structure is secured to the focus ring structure by gravity.

153. 152. The method of claim 151 , wherein connecting the unitary shield structure to the focus ring structure without fasteners comprises: inserting the first of the three radially extending structures of the focus ring structure into a slot formed in the first support portion of the unitary shield structure; and inserting the second of the three radially extending structures of the focus ring structure into a slot formed in the second support portion of the unitary shield structure.

154. 154. The method of claim 153, wherein connecting the unitary shield structure to the focus ring structure without fasteners further comprises inserting a third of the three radially extending structures of the focus ring structure into a slot formed in either the first support portion or the second support portion of the unitary shield structure.

155. 148. The method of claim 147, wherein placing the focus ring structure in the lower vertical position comprises actuating three lift components respectively engaging the three radially extending structures of the focus ring structure.

156. 148. The method of claim 147, further comprising: ceasing generation of the plasma in the plasma processing region above the substrate support structure; placing the focus ring structure in the upper vertical position; A method comprising:

157. 148. The method of claim 147, wherein the integral shield structure is formed of a ceramic material.

158. 158. The method of claim 157, wherein the ceramic material is aluminum oxide.

159. 158. The method of claim 157, wherein at least an inner surface of the integral shield structure has an average surface roughness in the range of about 150 microinches to about 500 microinches.

160. 160. The method of claim 159, wherein the ceramic material forming the unitary shield structure is exposed at the inner surface of the unitary shield structure.

161. 148. The method of claim 147, wherein components of the plasma interact with material on the substrate to generate plasma processing by-products, some of the plasma processing by-products adhering to the shield portion of the integral shield structure.

162. 162. The method of claim 161, wherein the material on the substrate is one or both of a lead zirconate titanate film and a platinum film.

163. 163. The method of claim 162, wherein generating the plasma comprises applying radio frequency power to a process gas in the plasma processing region, the radio frequency power being in a range from about 400 watts (W) to about 1250 W.

164. 164. The method of claim 163, wherein the radio frequency power is applied by a radio frequency signal having a frequency of about 13.56 MHz.

165. 164. The method of claim 163, further comprising: generating a bias voltage at the substrate support structure; The method, wherein the bias voltage is in the range of about 100V to about 600V.

166. 164. The method of claim 163, wherein the process gas is chlorine (Cl ２ ), boron trichloride (BCl ３ ), argon (Ar), carbon tetrafluoride (CF ４ ), oxygen (O ２ ), trifluoromethane (CHF ３ ), and sulfur hexafluoride (SF ６ ), the method being one or more of:

167. 167. The method of claim 166, further comprising: The method comprises maintaining a temperature of the substrate support structure within a range of about 40 degrees Celsius (°C) to about 80°C.

168. 167. The method of claim 166, further comprising: The method comprises maintaining a pressure within the plasma processing region within a range of about 5 milliTorr to about 50 milliTorr.

169. 164. The method of claim 163, wherein the process gas is chlorine (Cl) supplied to the plasma processing region at a flow rate in a range between about 20 standard cubic centimeters per minute (sccm) and about 300 sccm. ２ ), boron trichloride (BCl ), which is supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 300 sccm; ３ argon (Ar) supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 300 sccm; carbon tetrafluoride (CF) supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 200 sccm. ４ ), oxygen (O 2 ) supplied to the plasma processing region at a flow rate in the range of about 20 sccm to about 300 sccm. ２ ), trifluoromethane (CHF ３ ), and sulfur hexafluoride (SF) delivered to the plasma processing region at a flow rate in a range between about 50 sccm and about 300 sccm. ６ ),

170. 1. A method for manufacturing a substrate access port shield for use in a plasma processing chamber, comprising:

11. A method for forming a unitary shield structure comprising: a shield portion, a first support portion extending from a first end of the shield portion, and a second support portion extending from a second end of the shield portion, wherein the first support portion is configured to engage a vertically movable component in a plasma processing chamber and the second support portion is configured to engage the vertically movable component in the plasma processing chamber, the unitary shield structure being formed to extend along an arc, the shield portion being configured to at least partially cover a substrate access port opening of the plasma processing chamber when the first and second support portions are engaged with the vertically movable component and the vertically movable component is in a lower vertical position, and the shield portion being configured to not cover the substrate access port opening of the plasma processing chamber when the first and second support portions are engaged with the vertically movable component and the vertically movable component is in an upper vertical position.

171. 171. The method of claim 170, wherein the integral shield structure is formed of a ceramic material.

172. 172. The method of claim 171, wherein the integral shield structure is formed of aluminum oxide.

173. 172. The method of claim 171 further comprising: The method includes roughening at least an inner surface of the integral shield structure to have an average surface roughness within a range of about 150 microinches to about 500 microinches.

174. 174. The method of claim 173, wherein the roughening step is accomplished by media blasting.

175. 175. The method of claim 174, wherein the media blasting affects the interior surface of the integral shield structure with media including one or more of aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and strahlulus.

176. 174. The method of claim 173, wherein the roughening step includes performing a knurling process prior to firing the ceramic material.

177. 174. The method of claim 173, wherein the ceramic material is exposed at the inner surface after the roughening.

178. 171. The method of claim 170, wherein forming the integral shield structure includes forming a slot in the first support portion for receiving a first portion of the vertically movable component, and forming a slot in the second support portion for receiving a second portion of the vertically movable component.

179. 179. The method of claim 178, wherein forming the integral shield structure includes forming a slot in either the first support portion or the second support portion for receiving a third portion of the vertically movable component.

180. 1. An insert liner for a port of a plasma processing chamber, comprising: an insert liner configured to cover an inner surface of a port formed through a wall of the plasma processing chamber; An insert liner configured to have sufficient mechanical flexibility to compress an outer surface profile of the insert liner to enable insertion of the insert liner into the port, and the insert liner configured to apply a spring force against the inner surface of the port upon release of compression of the outer surface profile of the insert liner.

181. 181. A port shield for a plasma processing chamber as described in claim 180, wherein the insert liner has a first end separated from a second end by a gap forming a discontinuity in the outer surface profile of the insert liner.

182. 181. A port shield for a plasma processing chamber as described in claim 180, wherein the gap provides mechanical flexibility of the insert liner against compression of the outer surface profile of the insert liner to enable insertion of the insert liner into the port.

183. 181. The port shield for a plasma processing chamber of claim 180, wherein the insert liner is formed of sheet metal.

184. 181. The port shield for a plasma processing chamber of claim 180, wherein the insert liner is formed of anodized aluminum sheet metal.

185. 181. A port shield for a plasma processing chamber as described in claim 180, wherein the insert liner is shaped to substantially cover the inner surface of the port.

186. 181. A port shield for a plasma processing chamber as described in claim 180, wherein the insert liner is configured to surround an open space in the port and provide a view through the open space in the port.

187. 181. A port shield for a plasma processing chamber as described in claim 180, wherein the insert liner is configured to surround an open space in the port and cover an outer boundary of the open space in the port proximate an outer surface of the wall of the plasma processing chamber.

188. 181. A port shield for a plasma processing chamber as described in claim 180, wherein the insert liner is configured to surround an open space within the port and cover an inner boundary of the open space within the port proximate an inner surface of the wall of the plasma processing chamber.

189. 190. A port shield for a plasma processing chamber as described in claim 188, wherein the insert liner is configured to cover a portion of the inner surface of the wall of the plasma processing chamber around the port.

190. 181. The port shield for a plasma processing chamber of claim 180, wherein the port is a viewport configured to allow viewing of an interior region of the plasma processing chamber.

191. 181. A port shield for a plasma processing chamber as described in claim 180, wherein the spring force exerted by the insert liner against the inner surface of the port is sufficient to physically secure the insert liner within the port.

192. 181. A port shield for a plasma processing chamber as described in claim 180, wherein the insert liner comprises a process exposure surface that is fluidly exposed to an interior region of the plasma processing chamber when the insert liner is inserted into the port, the process exposure surface being configured to promote adhesion of plasma processing by-products to the process exposure surface.

193. 20. A port shield for a plasma processing chamber as described in claim 192, wherein the process exposed surface has an average surface roughness in the range of about 150 microinches to about 500 microinches.

194. 1. A plasma processing system comprising: a plasma processing chamber comprising a plasma processing region in which a plasma is generated during operation of the plasma processing chamber, the plasma processing chamber comprising a wall forming a portion of an enclosure around the plasma processing region, the wall comprising a port formed therethrough; an insert liner disposed within the port, the insert liner configured to cover an inner surface of the port, the insert liner configured to apply a spring force against the inner surface of the port to hold the insert liner in place within the port; A plasma processing system comprising:

195. 202. The plasma processing system of claim 194, wherein the insert liner is configured to have sufficient mechanical flexibility to compress an outer surface profile of the insert liner to enable insertion of the insert liner into the port.

196. 202. The plasma processing system of claim 195, wherein the insert liner is configured to apply the spring force against the inner surface of the port upon release of compression of the outer surface profile of the insert liner.

197. 202. The plasma processing system of claim 196, wherein the insert liner comprises a first end separated from a second end by a gap forming a discontinuity in the outer surface profile of the insert liner.

198. 202. The plasma processing system of claim 197, wherein the gap provides mechanical flexibility of the insert liner against compression of the outer surface profile of the insert liner to allow insertion of the insert liner into the port.

199. 202. The plasma processing system of claim 194, wherein the insert liner is formed of sheet metal.

200. 202. The plasma processing system of claim 194, wherein the insert liner is formed from anodized aluminum sheet metal.

201. 202. The plasma processing system of claim 194, wherein the insert liner is shaped to substantially cover the inner surface of the port.

202. 202. The plasma processing system of claim 194, wherein the insert liner is configured to surround an open space in the port and to provide a line of sight through the open space in the port.

203. 202. The plasma processing system of claim 194, wherein the insert liner is configured to surround an open space within the port and cover an outer boundary of the open space within the port proximate an outer surface of the wall of the plasma processing chamber.

204. 202. The plasma processing system of claim 194, wherein the insert liner is configured to surround an open space within the port and cover an inner boundary of the open space within the port proximate an inner surface of the wall of the plasma processing chamber.

205. 205. The plasma processing system of claim 204, wherein the insert liner is configured to cover a portion of the inner surface of the wall of the plasma processing chamber around the port.

206. 202. The plasma processing system of claim 194, wherein the port is a viewport configured to allow viewing of the plasma processing region.

207. 202. The plasma processing system of claim 194, wherein the spring force exerted by the insert liner against the inner surface of the port is sufficient to physically secure the insert liner within the port.

208. 202. The plasma processing system of claim 194, wherein the insert liner comprises a process exposure surface that is fluidly exposed to the plasma processing region when the insert liner is inserted into the port, the process exposure surface being conditioned to promote adhesion of plasma processing by-products to the process exposure surface.

209. 209. The plasma processing system of claim 208, wherein the process exposed surface has an average surface roughness in a range from about 150 microinches to about 500 microinches.

210. 1. A method for plasma processing of a substrate, comprising: providing a plasma processing chamber comprising a plasma processing region in which a plasma is generated during operation of the plasma processing chamber, the plasma processing chamber comprising a wall forming a portion of an enclosure around the plasma processing region, the wall comprising a port formed therethrough; placing an insert liner within the port, the insert liner configured to cover an inner surface of the port, the insert liner configured to apply a spring force against the inner surface of the port to hold the insert liner in place within the port; generating a plasma in the plasma processing region upon exposure to a substrate, components of the plasma interacting with materials on the substrate to generate plasma processing by-products, and the insert liner preventing plasma processing by-products from contacting the interior surface of the port; A method comprising:

211. 211. The method of claim 210, wherein a portion of the plasma processing by-products adheres to the insert liner.

212. 211. The method of claim 210, wherein the material on the substrate is one or both of a lead zirconate titanate film and a platinum film.

213. 211. The method of claim 210, wherein generating the plasma comprises applying radio frequency power to a process gas in the plasma processing region, the radio frequency power being in a range from about 400 watts (W) to about 1250 W.

214. 214. The method of claim 213, wherein the radio frequency power is applied by a radio frequency signal having a frequency of approximately 13.56 MHz.

215. 214. The method of claim 213, further comprising: generating a bias voltage at a substrate support structure on which the substrate is disposed; The method, wherein the bias voltage is in the range of about 100 volts (V) to about 600V.

216. 214. The method of claim 213, wherein the process gas is chlorine (Cl ２ ), boron trichloride (BCl ３ ), argon (Ar), carbon tetrafluoride (CF ４ ), oxygen (O ２ ), trifluoromethane (CHF ３ ), and sulfur hexafluoride (SF ６ ), the method being one or more of:

217. 217. The method of claim 216, further comprising: The method comprises maintaining a temperature of a substrate support structure on which the substrate is disposed within a range of about 40 degrees Celsius (°C) to about 80°C.

218. 217. The method of claim 216, further comprising: The method comprises maintaining a pressure within the plasma processing region within a range of about 5 milliTorr to about 50 milliTorr.

219. 214. The method of claim 213, wherein the process gas is chlorine (Cl) supplied to the plasma processing region at a flow rate in a range between about 20 standard cubic centimeters per minute (sccm) and about 300 sccm. ２ ), boron trichloride (BCl ), which is supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 300 sccm; ３ argon (Ar) supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 300 sccm; carbon tetrafluoride (CF) supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 200 sccm. ４ ), oxygen (O 2 ) supplied to the plasma processing region at a flow rate in the range of about 20 sccm to about 300 sccm. ２ ), trifluoromethane (CHF ３ ), and sulfur hexafluoride (SF) delivered to the plasma processing region at a flow rate in a range between about 50 sccm and about 300 sccm. ６ ),

220. 211. The method of claim 210, further comprising: The method includes compressing an exterior surface profile of the insert liner to permit insertion of the insert liner into the port.

221. 221. The method of claim 220, further comprising: releasing compression of the exterior surface profile of the insert liner such that the insert liner exerts the spring force against the interior surface of the port.

222. 211. The method of claim 210, wherein the insert liner has a first end separated from a second end by a gap forming a discontinuity in the exterior surface profile of the insert liner, the method comprising compressing the exterior surface profile of the insert liner to close the gap to enable insertion of the insert liner into the port.

223. 211. The method of claim 210, wherein the insert liner is formed of sheet metal.

224. 211. The method of claim 210, wherein the insert liner is formed of anodized aluminum sheet metal.

225. 211. The method of claim 210, wherein the insert liner is shaped to substantially cover the inner surface of the port when the insert liner is disposed within the port.

226. 211. The method of claim 210, wherein the insert liner is configured to surround an open space in the port and provide a field of view through the open space in the port when the insert liner is positioned within the port.

227. 211. The method of claim 210, wherein the insert liner is configured to surround an open space in the port and cover an outer boundary of the open space in the port proximate an outer surface of the wall of the plasma processing chamber when the insert liner is positioned within the port.

228. 211. The method of claim 210, wherein the insert liner is configured to surround an open space within the port and cover an inner boundary of the open space within the port proximate an inner surface of the wall of the plasma processing chamber when the insert liner is positioned within the port.

229. 229. The method of claim 228, wherein the insert liner is configured to cover a portion of the inner surface of the wall of the plasma processing chamber around the port when the insert liner is positioned within the port.

230. 211. The method of claim 210, wherein the port is a viewport configured to allow viewing of the plasma processing region.

231. 211. The method of claim 210, wherein the spring force exerted by the insert liner against the interior surface of the port is sufficient to physically secure the insert liner within the port.

232. 211. The method of claim 210, wherein the insert liner comprises a process exposure surface that is fluidly exposed to the plasma processing region when the insert liner is disposed within the port, the process exposure surface being configured to promote adhesion of plasma processing by-products to the process exposure surface.

233. 233. The method of claim 232, wherein the treatment exposed surface has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches).

234. 1. A method for manufacturing an insert liner for a port of a plasma processing chamber, comprising: forming an insert liner for lining an interior surface of a port formed through a wall of a plasma processing chamber; The method, wherein the insert liner is configured to have sufficient mechanical flexibility to compress an outer surface profile of the insert liner to enable insertion of the insert liner into the port, and the insert liner is configured to apply a spring force against the inner surface of the port upon release of compression of the outer surface profile of the insert liner.

235. 235. The method of claim 234, wherein the insert liner is formed with a first end separated from a second end by a gap forming a discontinuity in the exterior surface profile of the insert liner.

236. 236. The method of claim 235, wherein the gap is configured to provide mechanical flexibility of the insert liner against compression of the outer surface profile of the insert liner to allow insertion of the insert liner into the port.

237. 235. The method of claim 234, wherein the insert liner is formed of sheet metal.

238. 235. The method of claim 234, wherein the insert liner is formed of anodized aluminum sheet metal.

239. 235. The method of claim 234, wherein the insert liner is shaped to substantially cover the inner surface of the port.

240. 235. The method of claim 234, wherein the insert liner is configured to surround an open space in the port and provide visibility through the open space in the port when the insert liner is inserted into the port.

241. 235. The method of claim 234, wherein the insert liner is configured to surround an open space in the port and cover an outer boundary of the open space in the port proximate to an outer surface of the wall of the plasma processing chamber when the insert liner is inserted into the port.

242. 235. The method of claim 234, wherein the insert liner is configured to surround an open space within the port and cover an inner boundary of the open space within the port proximate an inner surface of the wall of the plasma processing chamber when the insert liner is inserted within the port.

243. 243. The method of claim 242, wherein the insert liner is configured to cover a portion of the inner surface of the wall of the plasma processing chamber around the port when the insert liner is inserted into the port.

244. 235. The method of claim 234, wherein the port is a viewport configured to allow viewing of an interior region of the plasma processing chamber.

245. 235. The method of claim 234, wherein the spring force exerted by the insert liner against the interior surface of the port is sufficient to physically secure the insert liner within the port.

246. 235. The method of claim 234, wherein the insert liner comprises a process exposure surface that is fluidly exposed to an interior region of the plasma processing chamber when the insert liner is inserted into the port, the method comprising conditioning the process exposure surface to promote adhesion of plasma processing by-products to the process exposure surface.

247. 247. The method of claim 246, wherein the treatment exposed surface is conditioned to have an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches).

248. 1. An exhaust baffle assembly for use in a plasma processing chamber, comprising: at least one baffle member configured to fit within an exhaust flow path of a plasma processing chamber; the at least one baffle member is configured to divert a flow of treated exhaust gas when disposed within the exhaust flow path; An exhaust baffle assembly, wherein an outer surface of the at least one baffle member is configured to promote deposition of plasma processing by-products present in the process exhaust gas stream to the at least one baffle member.

249. 249. An exhaust baffle assembly as described in claim 248, wherein the at least one baffle member has a substantially flat surface oriented at an angle transverse to a direction of primary exhaust flow through the exhaust passage when the at least one baffle member is positioned within the exhaust passage.

250. 250. The exhaust baffle assembly of claim 249, wherein the angle is approximately 45 degrees relative to the direction of the main exhaust flow.

251. 250. The exhaust baffle assembly of claim 249, wherein the angle is adjustable.

252. 249. The exhaust baffle assembly of claim 248, wherein the at least one baffle member is formed of anodized aluminum.

253. 249. An exhaust baffle assembly as described in claim 248, wherein the at least one baffle member has an average surface roughness in the range of about 150 microinches to about 500 microinches.

254. 249. The exhaust baffle assembly of claim 248, further comprising:

1. An exhaust baffle assembly comprising: a frame configured to hold the at least one baffle member, the frame comprising a bottom bar, a top bar, a first end bar, and a second end bar, the first end bar extending between the top bar and the bottom bar, the second end bar extending between the top bar and the bottom bar, and the at least one baffle member extending from the first end bar to the second end bar.

255. 255. The exhaust baffle assembly of claim 254, wherein the frame is formed of anodized aluminum.

256. 255. The exhaust baffle assembly of claim 254, wherein the frame has an average surface roughness in the range of about 150 microinches to about 500 microinches.

257. 255. An exhaust baffle assembly as described in claim 254, wherein the at least one baffle member includes five baffle members, each of the five baffle members extending from the first end bar to the second end bar, each of the five baffle members shaped to divert the process exhaust gas flow when the exhaust baffle assembly is positioned in the exhaust flow path, and outer surfaces of the five baffle members are configured to promote adhesion of plasma processing by-products present in the process exhaust gas flow to the five baffle members.

258. 258. An exhaust baffle assembly as described in claim 257, wherein each of the five baffle members has a substantially flat surface oriented at approximately 45 degrees relative to a direction of primary exhaust flow through the exhaust passage when the exhaust baffle assembly is positioned within the exhaust passage.

259. 258. An exhaust baffle assembly as described in claim 257, wherein each of the five baffle members has a substantially flat surface oriented transverse to a direction of primary exhaust flow through the exhaust passage when the exhaust baffle assembly is positioned within the exhaust passage.

260. 260. An exhaust baffle assembly as described in claim 259, wherein an orientation of the substantially planar surface of each of the five baffle members relative to a direction of the primary exhaust flow through the exhaust passage is adjustable.

261. 258. An exhaust baffle assembly as described in claim 257, wherein each of the five baffle members is formed from anodized aluminum.

262. 158. An exhaust baffle assembly as described in claim 157, wherein each of the five baffle members has an average surface roughness in the range of about 150 microinches to about 500 microinches.

263. 1. A plasma processing system comprising: a plasma processing chamber comprising a plasma processing region in which a plasma is generated during operation of the plasma processing chamber; an exhaust passage for the plasma processing chamber, the exhaust passage in fluid communication with the plasma processing region, the exhaust passage configured to direct a flow of process exhaust gases from the plasma processing region; a pump connected to the exhaust flow path, the pump configured to apply a negative pressure to an interior of the exhaust flow path; an exhaust baffle assembly disposed within the exhaust flow path, the exhaust baffle assembly comprising at least one baffle member configured to deflect a flow of the process exhaust gas within the exhaust flow path, an exterior surface of the at least one baffle member configured to promote deposition of plasma processing by-products present within the flow of the process exhaust gas onto the at least one baffle member; A plasma processing system comprising:

264. 264. The plasma processing system of claim 263, wherein the exhaust baffle assembly is configured to extend across essentially the entire cross-sectional flow area within the exhaust flow path such that the flow of the processing exhaust gas from the plasma processing region must flow through the exhaust baffle assembly.

265. 264. The plasma processing system of claim 263, wherein the at least one baffle member has a substantially flat surface oriented at an angle transverse to a direction of primary exhaust flow through the exhaust passage when the at least one baffle member is positioned within the exhaust passage.

266. 266. The plasma processing system of claim 265, wherein the angle is about 45 degrees relative to a direction of the main exhaust flow.

267. 266. The plasma processing system of claim 265, wherein the angle is adjustable.

268. 264. The plasma processing system of claim 263, wherein the at least one baffle member is formed from anodized aluminum.

269. 264. The plasma processing system of claim 263, wherein the at least one baffle member has an average surface roughness in the range of about 150 microinches to about 500 microinches.

270. 264. The plasma processing system of claim 263, further comprising: a frame configured to hold the at least one baffle member; the frame comprises a bottom bar, a top bar, a first end bar and a second end bar, the first end bar extending between the top bar and the bottom bar, the second end bar extending between the top bar and the bottom bar, and the at least one baffle member extending from the first end bar to the second end bar.

271. 271. The plasma processing system of claim 270, wherein the frame is formed from anodized aluminum.

272. 271. The plasma processing system of claim 270, wherein the frame has an average surface roughness in the range of about 150 microinches to about 500 microinches.

273. 271. The plasma processing system of claim 270, wherein the at least one baffle member comprises five baffle members, each of the five baffle members extending from the first end bar to the second end bar, each of the five baffle members shaped to divert the flow of the process exhaust gas when the exhaust baffle assembly is positioned in the exhaust flow path, and outer surfaces of the five baffle members configured to promote adhesion of plasma processing by-products present in the flow of the process exhaust gas to the five baffle members.

274. 274. The plasma processing system of claim 273, wherein each of the five baffle members has a substantially flat surface oriented at approximately 45 degrees relative to a direction of primary exhaust flow through the exhaust passage when the exhaust baffle assembly is positioned within the exhaust passage.

275. 274. The plasma processing system of claim 273, wherein each of the five baffle members has a substantially planar surface oriented transverse to a direction of primary exhaust flow through the exhaust passage when the exhaust baffle assembly is positioned within the exhaust passage.

276. 276. The plasma processing system of claim 275, wherein an orientation of the substantially planar surface of each of the five baffle members relative to a direction of the main exhaust flow through the exhaust passage is adjustable.

277. 274. The plasma processing system of claim 273, wherein each of the five baffle members is formed from anodized aluminum.

278. 274. The plasma processing system of claim 273, wherein each of the five baffle members has an average surface roughness within a range from about 150 microinches to about 500 microinches.

279. 1. A method for plasma processing of a substrate, comprising: providing a plasma processing system comprising a plasma processing chamber and an exhaust flow path for the plasma processing chamber, the plasma processing chamber comprising a plasma processing region where plasma is generated during operation of the plasma processing chamber, the exhaust flow path in fluid communication with the plasma processing region, the exhaust flow path configured to direct a flow of process exhaust gas from the plasma processing region, the plasma processing system comprising a pump connected to the exhaust flow path, the pump configured to apply a negative pressure inside the exhaust flow path, the plasma processing system comprising an exhaust baffle assembly disposed within the exhaust flow path, the exhaust baffle assembly comprising at least one baffle member shaped to deflect a flow of the process exhaust gas within the exhaust flow path, an outer surface of the at least one baffle member configured to promote attachment of plasma processing by-products present in the flow of the process exhaust gas to the at least one baffle member; generating a plasma in the plasma processing region by exposing the substrate; operating the pump to apply the negative pressure to the interior of the exhaust flow path to draw a flow of the process exhaust gas from the plasma processing region to the exhaust flow path through the exhaust baffle assembly in the exhaust flow path; A method comprising:

280. 280. The method of claim 279, wherein components of the plasma interact with material on the substrate to generate plasma processing by-products, some of the plasma processing by-products depositing on the at least one baffle member of the exhaust baffle assembly.

281. 281. The method of claim 280, wherein the material on the substrate is one or both of a lead zirconate titanate film and a platinum film.

282. 281. The method of claim 280, wherein generating the plasma comprises applying radio frequency power to a processing gas in the plasma processing region, the radio frequency power being in a range from about 400 watts (W) to about 1250 W.

283. 283. The method of claim 282, wherein the radio frequency power is applied by a radio frequency signal having a frequency of approximately 13.56 MHz.

284. 283. The method of claim 282, further comprising: generating a bias voltage at a substrate support structure on which the substrate is disposed; The method, wherein the bias voltage is in the range of about 100 volts (V) to about 600V.

285. 283. The method of claim 282, wherein the process gas is chlorine (Cl ２ ), boron trichloride (BCl ３ ), argon (Ar), carbon tetrafluoride (CF ４ ), oxygen (O ２ ), trifluoromethane (CHF ３ ), and sulfur hexafluoride (SF ６ ), the method being one or more of:

286. 286. The method of claim 285, further comprising: The method comprises maintaining a temperature of a substrate support structure on which the substrate is disposed within a range of about 40 degrees Celsius (°C) to about 80°C.

287. 286. The method of claim 285, further comprising: The method comprises maintaining a pressure within the plasma processing region within a range of about 5 milliTorr to about 50 milliTorr.

288. 283. The method of claim 282, wherein the process gas is chlorine (Cl) supplied to the plasma processing region at a flow rate in a range between about 20 standard cubic centimeters per minute (sccm) and about 300 sccm. ２ ), boron trichloride (BCl ), which is supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 300 sccm; ３ argon (Ar) supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 300 sccm; carbon tetrafluoride (CF) supplied to the plasma processing region at a flow rate in the range of about 50 sccm to about 200 sccm. ４ ), oxygen (O 2 ) supplied to the plasma processing region at a flow rate in the range of about 20 sccm to about 300 sccm. ２ ), trifluoromethane (CHF ３ ), and sulfur hexafluoride (SF) delivered to the plasma processing region at a flow rate in a range between about 50 sccm and about 300 sccm. ６ ),

289. 281. The method of claim 280, wherein the exhaust baffle assembly is configured to extend across essentially the entire cross-sectional flow area within the exhaust flow path such that the flow of the processing exhaust gas from the plasma processing region must flow through the exhaust baffle assembly.

290. 281. The method of claim 280, wherein the at least one baffle member has a substantially flat surface oriented at an angle transverse to a direction of primary exhaust flow through the exhaust passage.

291. 300. The method of claim 290, wherein the angle is approximately 45 degrees relative to the direction of the main exhaust flow.

292. 300. The method of claim 290, wherein the angle is adjustable.

293. 281. The method of claim 280, wherein the at least one baffle member is formed of anodized aluminum.

294. 281. The method of claim 280, wherein the at least one baffle member has an average surface roughness in the range of about 150 microinches to about 500 microinches.

295. 281. The method of claim 280, wherein the exhaust baffle assembly comprises a frame configured to hold the at least one baffle member, the frame comprising a bottom bar, a top bar, a first end bar, and a second end bar, the first end bar extending between the top bar and the bottom bar, the second end bar extending between the top bar and the bottom bar, and the at least one baffle member extending from the first end bar to the second end bar.

296. 300. The method of claim 295, wherein the frame is formed of anodized aluminum.

297. 300. The method of claim 295, wherein the frame has an average surface roughness within a range of about 150 microinches to about 500 microinches.

298. 1. A method for manufacturing an exhaust baffle assembly for use in a plasma processing system, comprising: forming at least one baffle member to fit within an exhaust flow path of a plasma processing chamber, the at least one baffle member having a shape to divert a flow of process exhaust gas when disposed within the exhaust flow path; conditioning an exterior surface of the at least one baffle member to promote deposition of plasma processing by-products present in the process exhaust gas flow onto the at least one baffle member; A method comprising:

299. 300. The method of claim 298, wherein the at least one baffle member is formed to have a substantially flat surface oriented at an angle transverse to a direction of primary exhaust flow through the exhaust passage when the at least one baffle member is positioned within the exhaust passage.

300. 300. The method of claim 299, wherein the angle is approximately 45 degrees relative to the direction of the main exhaust flow.

301. 300. The method of claim 299, wherein the angle is adjustable.

302. 300. The method of claim 298, wherein the at least one baffle member is formed of anodized aluminum.

303. 300. The method of claim 298, wherein the at least one baffle member has an average surface roughness in the range of about 150 microinches to about 500 microinches.

304. 300. The method of claim 298, further comprising: forming a frame for holding the at least one baffle member; the frame comprises a bottom bar, a top bar, a first end bar and a second end bar, the first end bar extending between the top bar and the bottom bar, the second end bar extending between the top bar and the bottom bar, and the at least one baffle member extending from the first end bar to the second end bar.

305. 305. The method of claim 304, wherein the frame is formed of anodized aluminum.

306. 305. The method of claim 304, wherein the frame has an average surface roughness within a range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches).

307. 305. The method of claim 304, wherein the at least one baffle member comprises five baffle members, each of the five baffle members arranged to extend from the first end bar to the second end bar, each of the five baffle members shaped to divert the flow of the process exhaust gas when the exhaust baffle assembly is positioned in the exhaust flow path, the method comprising conditioning outer surfaces of the five baffle members to promote adhesion of plasma processing by-products present in the flow of the process exhaust gas to the five baffle members.

308. 308. The method of claim 307, wherein each of the five baffle members is formed to have a substantially flat surface oriented at approximately 45 degrees relative to a direction of primary exhaust flow through the exhaust passage when the exhaust baffle assembly is positioned within the exhaust passage.

309. 308. The method of claim 307, wherein each of the five baffle members is formed to have a substantially planar surface oriented transverse to a direction of primary exhaust flow through the exhaust passage when the exhaust baffle assembly is positioned within the exhaust passage.

310. 310. The method of claim 309, wherein each of the five baffle members is formed to permit adjustment of an orientation of the substantially planar surface of each of the five baffle members relative to a direction of the primary exhaust flow through the exhaust passage.

311. 308. The method of claim 307, wherein each of the five baffle members is formed from anodized aluminum.

312. 308. The method of claim 307, wherein each of the five baffle members is adjusted to have an average surface roughness within a range of about 150 microinches to about 500 microinches.

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