Bonding method, bonding device, and manufacturing method of article

Abstract

To provide a technique for advantageously improving yield of bonded articles obtained by a plurality of times of bonding including first objects, second objects and third objects.SOLUTION: A bonding method in which a substrate on which a plurality of first objects are formed, a first carrier on which a plurality of second objects are formed, a second carrier on which a plurality of third objects are formed are conveyed to a bonding device, and the second objects and the third objects are bonded in order to the first objects. The method has: a first step of evaluating a bonding result in which the second objects were bonded to the first objects; a second step of determining a combination of the first objects to which the second objects were bonded and the third objects to which the first objects are bonded on the basis of the bonding result; and a third step of bonding the first objects to which the second objects were bonded and the third objects according to the combination determined in the second step.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a joining method, a joining device, and a method for manufacturing an article. [Background technology]

[0002] A technique has been proposed for a bonding apparatus that bonds non-defective products together and defective products together based on quality information about the first object and the second object acquired in advance when bonding a first object and a second object (see Patent Document 1).The technique disclosed in Patent Document 1 makes it possible to improve the yield of products (such as devices) manufactured by bonding a first object and a second object. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2000-68296 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, when performing multiple bonding operations such as bonding a third object to a first object bonded with a second object, the bonding state (bonding result) of the first object and the second object may cause a loss of consistency with the previously acquired pass / fail information on the first object. For example, if the positional deviation between the first object and the second object bonded to the first object exceeds an allowable range, even if the first object itself is a pass / fail product, when the third object is bonded (the bonded product in which the first object and the second object are bonded) should be treated as a defective product. As described above, the conventional technology does not take into account the influence of bonding the first object and the second object on the previously acquired pass / fail information, and therefore does not necessarily achieve a sufficient effect of improving the yield.

[0005] The present invention has been made in consideration of such problems in the conventional technology, and has an exemplary object to provide a technology that is advantageous for improving the yield of a joined object obtained by multiple joinings including a first object, a second object, and a third object. [Means for solving the problem]

[0006] In order to achieve the above-mentioned object, a bonding method as one aspect of the present invention comprises transporting a substrate on which a plurality of first objects are formed, a first carrier on which a plurality of second objects are formed, and a second carrier on which a plurality of third objects are formed to a bonding apparatus, and sequentially bonding the second object and the third object to the first object, the bonding method comprising: a first step of evaluating a bonding result of bonding the second object to the first object; a second step of determining a combination of the first object to which the second object is bonded and the third object to be bonded to the first object based on the bonding result; and a third step of bonding the first object to which the second object is bonded and the third object in accordance with the combination determined in the second step.

[0007] Further objects or other aspects of the present invention will become apparent from the following description of the embodiments with reference to the accompanying drawings. Effect of the Invention

[0008] According to the present invention, for example, it is possible to provide a technique that is advantageous for improving the yield of a bonded article obtained by bonding a first object, a second object, and a third object multiple times. [Brief description of the drawings]

[0009] [Figure 1] 1 is a diagram showing a schematic configuration of a joining device according to one aspect of the present invention; [Diagram 2] FIG. 4 is a top view showing the wafer stage from the +Z direction. [Diagram 3] 4 is a flowchart for explaining a joining operation in the joining device shown in FIG. [Figure 4] FIG. 11 is a diagram illustrating an example of rank information. [Diagram 5] FIG. 2 is a top view showing the wafer from the +Z direction. [Figure 6] FIG. 1 is a diagram showing a configuration of a bonding system. [Figure 7] 7 is a flowchart for explaining a joining operation in the joining system shown in FIG. 6. [Figure 8] 8 is a flowchart for specifically illustrating a process in the first joining device shown in FIG. 7. [Figure 9] 8 is a flowchart for specifically illustrating a process in the second joining device shown in FIG. 7. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0011] In the following, the substrate is a wafer on which a plurality of first dies (first objects) including semiconductor devices are formed. The carrier is a dicing frame on which a plurality of second dies (second objects) and a plurality of third dies (third objects) on which semiconductor devices are formed and separated are mounted. However, the carrier and the substrate are not limited to these, and the second and third dies may be the same type of die or different types of dies.

[0012] The first object includes, in addition to a semiconductor device die formed on a wafer, for example, a silicon interposer having wiring formed on a silicon wafer, a glass interposer having wiring formed on a glass wafer, etc. The first object also includes an organic interposer having wiring formed on an organic panel (PCB), a wafer on which semiconductor devices are formed, and a die including some semiconductor devices already bonded thereto.

[0013] The second object and the third object include, in addition to singulated dies, for example, a stack of several already singulated dies, a small piece of material, an optical element, a MEMS, a structure, etc. The bonding method of the first object, the second object, and the third object is also not limited. The bonding method of the first object, the second object, and the third object includes, for example, bonding with an adhesive, temporary bonding with a temporary adhesive, bonding with hybrid bonding, atomic diffusion bonding, vacuum bonding, bump bonding, etc. In this way, the bonding method of the first object, the second object, and the third object includes various temporary bonding and permanent bonding methods.

[0014] As examples of industrial applications of the joining device according to one aspect of the present invention, the following application examples are considered.

[0015] A first application example may be the manufacture of a stacked memory. When the bonding apparatus according to one aspect of the present invention is applied to the manufacture of a stacked memory, the first object is a memory die which is a semiconductor device formed on a wafer, and the second object and the third object are individualized memory dies. In the manufacture of a stacked memory, generally, about eight layers are stacked, so that in the seventh layer bonding, the first object is a substrate on which six layers of memory dies have already been bonded on a wafer. In the eighth layer bonding, the first object is a substrate on which a seventh layer of memory dies (second object) has been bonded. Note that the final layer may be a driver die for driving the memory.

[0016] As a second application example, heterogeneous integration of a processor is conceivable. In contrast to the mainstream of conventional processors, which are SoCs in which logic circuits and SRAMs are configured in one semiconductor element, each element is manufactured on a separate wafer by applying an optimal process to each element, and then these elements are bonded to manufacture a processor. When a bonding apparatus according to one aspect of the present invention is applied to heterogeneous integration, the first object is a logic die as a semiconductor device formed on a wafer. The second object and the third object are dies such as SRAMs, antennas, and drivers that are singulated after probing. Usually, different dies are bonded sequentially, so that the number of bonded objects of the first object increases sequentially. For example, when bonding is started from an SRAM, a logic die that has not been bonded becomes the first object, and a SPAM becomes the second object, and when bonding the next die (third die) after the SRAM, the logic wafer to which the SRAM is bonded becomes the first object.

[0017] As a third application example, 2.5D bonding using a silicon interposer is considered. A silicon interposer is a silicon wafer on which wiring is formed. In 2.5D bonding, a silicon interposer is used to bond singulated dies to electrically bond the dies. When a bonding device according to one aspect of the present invention is applied to die bonding to a silicon interposer, the first object is a silicon interposer on which wiring is formed on a silicon wafer, and the second object and the third object are singulated dies. Generally, since multiple types of dies are bonded to a silicon interposer, the first object also includes a silicon interposer to which several dies are bonded.

[0018] A fourth application example may be 2.1D bonding using an organic interposer or a glass interposer. An organic interposer is an organic panel (PCB substrate, CCL substrate) used as a package substrate on which wiring is formed. A glass interposer is a glass panel on which wiring is formed. 2.1D bonding is bonding a singulated die to an organic interposer or a glass interposer, and electrically bonding the dies with wiring on the interposer. When a bonding device according to one aspect of the present invention is applied to die bonding to an organic interposer, the first object is an organic panel on which wiring is formed, and the second object and the third object are singulated dies. When a bonding device according to one aspect of the present invention is applied to die bonding to a glass interposer, the first object is a glass panel on which wiring is formed, and the second object and the third object are singulated dies. Generally, since multiple types of dies are bonded to an organic interposer or a glass interposer, the first object also includes an organic interposer or a glass interposer to which several dies are bonded.

[0019] As a fifth application example, heterogeneous substrate bonding is conceivable. For example, in the field of infrared image sensors, InGaAs is known as a highly sensitive material. Therefore, by using InGaAs for the sensor part that receives light and silicon that realizes high-speed processing for the logic circuit that extracts data, it is possible to manufacture a highly sensitive and high-speed infrared image sensor. However, only small-diameter substrates (wafers) of InGaAs crystals, such as 4 inches, are mass-produced, which are smaller than the mainstream 300 mm silicon wafer. Therefore, a technology has been proposed in which an individualized InGaAs substrate is bonded onto a 300 mm silicon wafer on which a logic circuit is formed. The bonding apparatus as one aspect of the present invention can also be applied to heterogeneous substrate bonding in which substrates made of different materials and of different sizes are bonded. When the bonding apparatus as one aspect of the present invention is applied to heterogeneous substrate bonding, the first object is a large-diameter substrate such as a silicon wafer, and the second object and the third object are small pieces of material such as InGaAs. The small pieces of material are sliced ​​crystals, but it is preferable to cut them into a square shape.

[0020] First Embodiment FIG. 1 is a diagram showing a schematic configuration of a bonding apparatus BD according to one aspect of the present invention. The bonding apparatus BD bonds individualized dies 51 (second and third objects) to a die 61 (first object) at an arbitrary position of a wafer 6 as a substrate. In this embodiment, the bonding apparatus BD transports a wafer 6 on which a plurality of dies 61 are formed and a dicing frame 5 on which a plurality of dies 51 are mounted, and sequentially bonds two dies 51 (second and third dies) to the die 61 (first die). The dies 51 are provided in a state arranged (held) on a dicing tape attached to the dicing frame 5 (first and second carriers). In this specification, directions are indicated by an XYZ coordinate system as shown in each drawing. Typically, the XY plane is a plane parallel to a horizontal plane, and the Z axis is an axis parallel to the vertical direction. The X axis, the Y axis, and the Z axis are shown as examples of directions perpendicular or intersecting each other.

[0021] 1, the bonding device BD has a pickup unit 3 and a bonding unit 4 arranged on a base 1 whose vibration is damped by a mount 2, and a frame supply unit 7. The pickup unit 3 and the bonding unit 4 function as a bonding unit that bonds a die 61 (first object) and a die 51 (second object and third object) of a wafer 6 under the control of a control unit 441 described later. In this embodiment, the pickup unit 3 and the bonding unit 4 are arranged on one base 1, but the pickup unit 3 and the bonding unit 4 may be individually arranged on different bases.

[0022] The frame supply unit 7 includes a frame magazine 71 and a frame transport arm 72. The frame magazine 71 is configured to be removable, and is supplied from outside the device with a plurality of dicing frames 5 stored (mounted) therein. The frame transport arm 72 takes out the dicing frame 5 from the frame magazine 71, and transports (passes) the dicing frame 5 to the pickup unit 3. The frame transport arm 72 also transports (returns) the dicing frame 5 for which the bonding process has been completed from the pickup unit 3 to the frame magazine 71. Note that, in this embodiment, the dicing frame 5 is transported by only one frame transport arm 72, but a configuration in which a plurality of frame transport arms 72 are relayed may also be used. Furthermore, from the viewpoint of shortening the replacement time of the frame magazine 71 and the transport time of the dicing frame 5, the bonding device BD may have a plurality of frame supply units 7.

[0023] The frame supply unit 7 may be disposed at a position away from the wafer supply unit that supplies the wafer 6 to the bonding unit 4 (transports the wafer 6 between the bonding unit 4). Also, the frame supply unit 7 may be disposed adjacent to the wafer supply unit, and may share part of the transport arm and the transport path including them.

[0024] The pickup unit 3 includes a pickup head 31 and a release head 32. The pickup unit 3 peels off the die 51 to be bonded to the wafer 6 from the dicing tape by the release head 32, and holds the die 51 peeled off from the dicing tape by suction (adsorption) with the pickup head 31. The pickup head 31 rotates the die 51 by 180 degrees, for example, and passes it to the bonding head 423 of the bonding unit 4.

[0025] The bonding unit 4 includes a stage base 41 and an upper base 42. A wafer stage 43 is mounted on the stage base 41. The wafer stage 43 is configured to be drivable in the X and Y directions by a driving mechanism (not shown) such as a linear motor. The wafer stage 43 may also be configured to be drivable for rotation about an axis parallel to the Z direction. However, instead of driving the wafer stage 43 for rotation about an axis parallel to the Z direction, the bonding head 423 may drive the die 51 for rotation about an axis parallel to the Z direction.

[0026] The wafer stage 43 is provided with a die observation camera 431. The die observation camera 431 captures an image of the die 51 held by the bonding head 423. The control unit 441 obtains the positions of the characteristic points of the die 51 (second object and third object) held by the bonding head 423, the outer dimensions of the die 51, and the distances (flatness) in the height direction (Z direction) of a plurality of points on the measurement surface from the image obtained by the die observation camera 431. In this way, the die observation camera 431 cooperates with the control unit 441 to realize the function of measuring the positions of the characteristic points (locations) of the die 51, the outer diameter dimensions of the die 51, and the flatness of the die 51.

[0027] In addition, a bar mirror 432 is provided on the wafer stage 43. The bar mirror 432 is used as a target of the interferometer 422. The wafer stage 43 holds the wafer 6 via a wafer chuck 433.

[0028] The upper base 42 is provided with a wafer observation camera 421. The wafer observation camera 421 captures an image of the wafer 6 held by the wafer stage 43 (wafer chuck 433). The control unit 441 obtains the positions of the characteristic points of the die 61 (first object) of the wafer 6 held by the wafer stage 43 and the distances (flatness) in the height direction (Z direction) of a plurality of points on the measurement surface of the wafer 6 from the image obtained by the wafer observation camera 421. In this way, the wafer observation camera 421 cooperates with the control unit 441 to realize a function of measuring the positions of the characteristic points (locations) of the die 61 of the wafer 6 and the flatness of the wafer 6. The wafer observation camera 421 may be, for example, a camera capable of measuring element patterns or marks formed on or inside the wafer using infrared light as measurement light.

[0029] The upper base 42 is further provided with an interferometer 422 for measuring the position of the wafer stage 43 using a bar mirror 432 , and a bonding head 423 for holding the die 51 delivered from the pickup head 31 .

[0030] When bonding the die 51 to the wafer 6 (the die 61), for example, the bonding head 423 is driven downward (-Z direction) to bond the die 51 held by the bonding head 423 to the wafer 6 held by the wafer stage 43. Alternatively, the die 51 held by the bonding head 423 may be bonded to the wafer 6 held by the wafer stage 43 by driving the wafer stage 43 or the wafer chuck 433 upward (+Z direction).

[0031] In this embodiment, a configuration is adopted in which the pick-up head 31 rotates the die 51 by 180 degrees and passes it to the bonding head 423. However, one or more die holders may be provided between the pick-up head 31 and the bonding head 423, and the die 51 may be passed from the pick-up head 31 to the die holder, and then the die 51 may be passed from the die holder to the bonding head 423. Also, a drive mechanism for driving the bonding head 423 may be provided to drive the bonding head 423 so that the bonding head 423 receives the die 51 from the pick-up head 31. Note that the bonding device BD may have a plurality of pick-up heads, a plurality of release heads, and a plurality of bonding heads in order to improve productivity.

[0032] The bonding device BD further includes a control unit 441 configured with an information processing device (computer) including a CPU, a memory, and the like. The control unit 441 generally controls each unit of the bonding device BD, such as the pickup unit 3 and the bonding unit 4, in accordance with a program stored in the storage unit to operate the bonding device BD. As described later, in this embodiment, the control unit 441 functions as an evaluation unit that evaluates the bonding result of bonding a die 51 (second object) to a die 61 (first object). In addition, in this embodiment, the control unit 441 also functions as a determination unit that determines a combination of the die 61 to which the die 51 is bonded and the die 51 (third die) to be bonded to the die 61, based on the bonding result between the die 61 (first object) and the die 51 (second object).

[0033] FIG. 2 is a top view showing the wafer stage 43 from the +Z direction. The wafer 6 is held by the wafer stage 43 via a wafer chuck 433. The wafer 6 or the wafer stage 43 is positioned with respect to the X direction and Y direction, which are orthogonal or intersect each other, and the rotation around an axis parallel to the Z direction, which is orthogonal to them. Therefore, the wafer stage 43 is provided with a bar mirror 432, specifically, a bar mirror 432a and a bar mirror 432b. The bar mirror 432a is used as a target for the interferometers 422a and 422c. The control unit 441 can determine the position of the wafer stage 43 in the X direction based on the output from the interferometer 422a, and can determine the rotation (amount of rotation) of the wafer stage 43 around an axis parallel to the Z direction based on the outputs from the interferometers 422a and 422c (the difference between them). The bar mirror 432b is used as a target for the interferometer 422b. The control unit 441 can determine the position of the wafer stage 43 in the Y direction based on the output from the interferometer 422b. Based on the outputs from the interferometers 422a, 422b, and 422c, the control unit 441 feedback-controls the wafer 6 or the wafer stage 43 with respect to rotations about axes parallel to the X direction, the Y direction, and the Z direction perpendicular thereto. In this way, the interferometers 422 and the control unit 441 function as a positioning mechanism that positions the wafer 6 or the wafer stage 43 two-dimensionally with high accuracy.

[0034] A reference plate 434 is provided on (the upper surface of) the wafer stage 43. In this embodiment, a plurality of marks 434a, 434b, and 434c are arranged (drawn) on the reference plate 434. The reference plate 434 is made of a material with a low thermal expansion coefficient, and the marks 434a, 434b, and 434c are drawn with high positional accuracy. For example, the reference plate 434 is made of a quartz substrate, and the marks 434a, 434b, and 434c are drawn thereon using a drawing method for a semiconductor lithography process. The reference plate 434 has a surface at approximately the same height as the surface of the wafer 6, and can be observed by the wafer observation camera 421, but a separate camera for observing the reference plate 434 may be provided.

[0035] The wafer stage 43 may have a configuration in which a coarse movement stage that is driven in a large range and a fine movement stage that is driven in a small range with high accuracy are combined. In such a configuration, the die observation camera 431, the bar mirrors 432a and 432b, the wafer chuck 433, and the reference plate 434 are provided on the fine movement stage in order to realize high-accuracy positioning.

[0036] Here, a method of guaranteeing the origin position, magnification, X-axis and Y-axis directions (rotation) and orthogonality of the wafer stage 43 using the reference plate 434 will be described. The mark 434a is observed by the wafer observation camera 421, and the measurement value (output value) of the interferometer when the mark 434a is located at the center of the image acquired by the wafer observation camera 421 is set as the origin of the wafer stage 43. Next, the mark 434b is observed by the wafer observation camera 421, and the Y-axis direction (rotation) and the magnification in the Y direction of the wafer stage 43 are determined based on the measurement value of the interferometer when the mark 434b is located at the center of the image acquired by the wafer observation camera 421. Next, the mark 434c is observed by the wafer observation camera 421, and the X-axis direction (rotation) and the magnification in the X direction of the wafer stage 43 are determined based on the measurement value of the interferometer when the mark 434c is located at the center of the image acquired by the wafer observation camera 421.

[0037] In this way, the direction from the mark 434b to the mark 434a of the reference plate 434 is set as the Y axis of the bonding device BD, and the direction from the mark 434c to the mark 434a is set as the X axis of the bonding device BD, and calibration of the axis direction and orthogonality can be performed. Also, calibration can be performed using the distance between the mark 434b and the mark 434a as the scale reference for the Y axis of the bonding device BD, and the distance between the mark 434c and the mark 434a as the scale reference for the X axis of the bonding device BD.

[0038] In an interferometer, the measurement value fluctuates due to a change in the refractive index of the optical path caused by a change in air pressure or temperature. Therefore, it is desirable to perform calibration at any timing to guarantee the origin position, magnification, and the directions (rotations) and orthogonality of the X-axis and Y-axis of the wafer stage 43. In order to reduce the fluctuation in the measurement value of the interferometer, the space in which the wafer stage 43 is placed may be covered with a temperature-controlled chamber, and the temperature inside the temperature-controlled chamber may be controlled.

[0039] In this embodiment, the case where the reference plate 434 provided on the wafer stage 43 is observed by the wafer observation camera 421 has been described, but the present invention is not limited to this. For example, the reference plate 434 may be provided on the upper base 42, and the reference plate 434 provided on the upper base 42 may be observed by the die observation camera 431 to ensure the origin position, magnification, and X-axis and Y-axis directions (rotation) and orthogonality of the wafer stage 43. Also, instead of performing calibration by observing the reference plate 434, for example, calibration may be performed by abutting against a reference surface, or high-precision positioning may be performed using a position measuring instrument whose absolute value is guaranteed, such as a white light interferometer.

[0040] Referring to Figure 3, the operation in the bonding apparatus BD will be described, i.e., the bonding operation (bonding method) of bonding a die 51 (second object) to a die 61 (first object) of a wafer 6, and further bonding a die 51 (third object) to the bonded die 61.

[0041] In this embodiment, a combination of the die 51 and the die 61 to be bonded to the die 51 is determined so that the die 51 and the die 61 are bonded in the order of priority from the combination of the rank of the die 51 and the rank of the die 61. Then, the die 51 and the die 61 are bonded according to the determined combination. The priority is set (predetermined) so that the more similar the rank of the die 51 and the rank of the die 61 are, the higher the priority. For example, the combination in which the rank of the die 51 and the rank of the die 61 are the same is set to have the highest priority. Specifically, when the ranks of the die 51 and the die 61 are good or bad, the priority is set so that the combination in which the die 51 and the die 61 are good and bad is set to have the highest priority. The reason why the die 51 is bonded to the defective die 61 is that the die 51 needs to be bonded (arranged) to the defective die 61 as well in order to suppress a decrease in uniformity in the molding and bonding process. Here, if either one of the dies 51 and 61 is defective, the joined product (device) in which the die 51 is joined to the die 61 will be defective. In this way, when a good product and a defective product are joined, the good product will be wasted, and the yield will decrease. Therefore, in order to avoid wasting the good product, it is preferable to set a priority order such that the defective die 51 is joined to the defective die 61.

[0042] Even when a good die 61 (first object) and a good die 51 (second object) are bonded together, the die 61 may become defective after bonding (after bonding) due to misalignment when bonding them together. Therefore, if a die 51 (third object) is further bonded without considering the deterioration of the die 61 (first object) after bonding, there is a possibility that the good die 51 (third object) will be bonded to the defective die 61 (first object) after bonding.

[0043] Therefore, in this embodiment, the joining result of joining the die 51 (second object) to the die 61 (first object) is evaluated, and based on the evaluation result, a combination of the joined die 61 and the die 51 (third object) to be joined to the die 61 is determined. Note that, hereinafter, the die 61 formed on the wafer 6 is referred to as the first die, and the die 51 joined in order to the die 61 may be referred to as the second die and the third die. Also, in this embodiment, the second die and the third die are assumed to be the same type of die, and the second die and the third die are assumed to be mounted on the same dicing frame 5 (the same carrier).

[0044] In S101, rank information on the plurality of dicing frames 5 and wafers 6 stored in the frame magazine 71 to be supplied (transported) to the bonding device BD is acquired. In semiconductor manufacturing, after semiconductor devices are manufactured on a wafer, for example, a prober is used to determine whether the devices are good or bad. In some cases, devices may be classified (classified into a plurality of ranks) not only according to whether they are good or bad, but also according to performance (characteristics) such as speed. In this way, the rank information is a division determined from a class including (data related to) the quality of each of the die 51 (second die and third die) and the die 61 (first die), that is, data indicating the rank. Therefore, in this embodiment, rank information including data indicating the rank to which each of the die 51 (second die and third die) mounted on each of the plurality of dicing frames 5 belongs and data indicating the rank to which each of the die 61 (first die) formed on the wafer 6 belongs is acquired. In addition, as described above, the rank information is acquired from an external device different from the bonding device BD, such as a prober, before the supply of the dicing frames 5 and the wafer 6 is started.

[0045] In the following, an example will be described in which three dicing frames D11, D12, and D13 and one wafer W are supplied to the bonding device BD. In this case, the rank information acquired in S101 includes data indicating the number of dies 61 formed on the wafer W (the number of good products and the number of defective products), as shown in FIG. 4. The rank information acquired in S101 also includes data indicating the number of dies 51 (the second die and the third die) mounted on each of the dicing frames D11, D12, and D13 (the number of good products and the number of defective products), as shown in FIG. The number of dies 61 formed on the wafer W is basically greater than the number of dies 51 mounted on each of the dicing frames D11, D12, and D13.

[0046] In S102, based on the rank information acquired in S101, a combination of a first die (die 61) and a second die (die 51) to be joined to the first die is determined so that non-defective products and defective products are joined together. If a combination of non-defective products or a combination of defective products cannot be determined, a combination of a non-defective first die and a defective second die, or a combination of a defective first die and a non-defective second die is determined.

[0047] In S103, the dicing frame D11, D12 or D13 is transported to the pickup unit 3 and the wafer W is transported to the bonding unit 4 according to the combination determined in S102, and the first die (die 61) and the second die (die 51) are bonded together. Note that as long as the combination of the first and second dies to be bonded together is the combination determined in S102, the order of bonding is arbitrary. Furthermore, when bonding of all the second dies included in the combination determined in S102 to the first die among the dies mounted on the dicing frame is completed, the dicing frame is replaced. Then, the second dies are bonded to all the first dies formed on the wafer W according to the combination determined in S102.

[0048] 4 is obtained, for example, all of the first and second dies can be bonded in combinations of non-defective products and combinations of defective products by using dicing frames D12 and D13 for the wafer W. However, if there are multiple combinations of dicing frames that maximize the number of bonds in combinations of non-defective products and the number of bonds in combinations of defective products, the combination of the first and second dies can be determined for any one of those combinations.

[0049] In this embodiment, the rank information has been described as data of a two-level ranking indicating the quality of the dies (first die, second die, third die), but as described above, the number of ranking levels may be any number of levels greater than or equal to three, and the criteria may be any criteria other than quality.

[0050] In addition, in this embodiment, combinations of the same rank, such as a combination of non-defective products and a combination of defective products, are prioritized, but combinations of the same rank do not necessarily have to be prioritized. For example, within a range in which the rank of the die 51 and the rank of the die 61 are similar (i.e., bonding of the die 51 and the die 61 is permitted), a combination of any rank may be prioritized. It is sufficient that the priority order of the combination of any rank is uniquely determined.

[0051] In S104, the bonding result of bonding the second die to the first die in S103 (i.e., whether the first die is good or bad after the second die is bonded) is evaluated. Here, an inspection device such as a prober is not used, but various measuring devices of the bonding device BD are used to evaluate the bonding result between the first die and the second die. In this embodiment, the amount of misalignment between the first die and the second die bonded to the first die is evaluated as the bonding result between the first die and the second die.

[0052] With reference to FIG. 5, a specific example of a method for evaluating the amount of misalignment between the first die and the second die as a result of bonding the first die and the second die will be described. FIG. 5 is a top view showing the wafer 6 from the +Z direction. For example, a first alignment mark AM1 for measurement is provided around each die 61 (first die) on the wafer, and a second alignment mark AM2 for measurement is provided on each die 51 (second die and third die) bonded to the die 61. After bonding the die 61 and the die 51, the periphery of each die 51 is photographed by the die observation camera 431 to obtain a peripheral image, and the relative distance between the first alignment mark AM1 and the second alignment mark AM2 in the peripheral image is set as the amount of misalignment between the die 61 and the die 51. The amount of misalignment between the die 61 (first die) and the die 51 (second die) includes X, Y, and θ (angle). Then, it is evaluated whether the amount of misalignment between the first die and the second die is within an allowable range (or outside the allowable range). The allowable range is set as a range of the amount of misalignment that results in a defective product rate that is allowable as a yield rate, based on the relationship between the amount of misalignment and the defective product rate based on the measurement results of the electrical characteristics. For example, assuming that the allowable range is X1, Y1, and θ1, if the conditions of "X≦X1", "Y≦Y1", and "θ≦θ1" are satisfied, the die 61 (first die) to which the die 51 (second die) is bonded is evaluated as a good product. On the other hand, if "X>X1", "Y>Y1", or "θ>θ1", the die 61 (first die) to which the die 51 (second die) is bonded is evaluated as a defective product. In this way, if the amount of misalignment between the first die and the second die is within the allowable range, the first die to which the second die is bonded is evaluated as a good product, and if the amount of misalignment between the first die and the second die is outside the allowable range, the first die to which the second die is bonded is evaluated as a defective product. Note that the wiring formed on the die 51 (second die) may be stored as a template instead of the second alignment mark AM2, and the relative distance between the first alignment mark AM1 and the template of the die 51 may be set as the amount of misalignment between the die 61 and the die 51.

[0053] In the present embodiment, the case where the misalignment amount between the first die and the second die is obtained from an image (peripheral image) obtained by imaging the first die to which the second die is bonded has been described, but the present invention is not limited to this. For example, the misalignment amount between the first die and the second die can be obtained (estimated) from a load value (pressure value) when the second die is bonded to the first die. The load value when the second die is bonded to the first die can be obtained by, for example, a load sensor provided on the bonding head 423 or the wafer stage 43. In addition, the misalignment amount between the first die and the second die can be obtained (estimated) from the position of at least one of the holders of the wafer stage 43 (substrate holder) and the bonding head 423 (carrier holder) when the second die is bonded to the first die. The positions of these holders can be obtained from an interferometer for measuring the position of the bonding head 423 or an interferometer 422 for measuring the position of the wafer stage 43. Furthermore, it is also possible to obtain (estimate) the amount of misalignment between the first die and the second die from information indicating the presence or absence of an abnormality when the second die is bonded to the first die. The information indicating the presence or absence of an abnormality can be obtained by the control unit 441 monitoring each unit related to the bonding between the first die and the second die.

[0054] In S105, quality information (rank information) indicating quality of each of the first dies to which the second die is bonded is acquired. In this embodiment, the quality information is acquired by updating the rank information acquired in S101, specifically, (data relating to) quality of each of the first dies (dies 61), so as to match (the result of evaluating) the bonding result between the first and second dies. However, instead of updating the rank information, the bonding result between the first and second dies evaluated in S104 may be used as quality information indicating quality of each of the first dies to which the second die is bonded. Also, as described above, in this embodiment, the die 51 mounted on the dicing frame 5 is the second and third dies, so that the rank information acquired in S101 includes (data relating to) quality of each of the third dies. However, there are cases in which the second and third dies are mounted on different dicing frames, and the rank information regarding the third die, i.e., the data regarding the quality of each of the third dies, is not acquired. In such a case, data on the quality of each of the third dies is obtained from an external device such as a prober together with quality information indicating the quality of each of the first dies to which the second die is bonded. Also, in S101, rank information including data on the quality of each of the third dies may be obtained separately from rank information including data on the quality of each of the second dies.

[0055] In S106, based on the pass / fail information acquired in S105 and the data on the pass / fail of each of the third dies, a combination of the first die to which the second die is joined and the third die to be joined to the first die is determined so that pass / fail products and fail / fail products are joined together. If a combination of pass / fail products or a combination of fail / fail products cannot be determined, a combination of a pass / fail first die and a fail / fail third die after joining, or a combination of a fail / fail first die and a pass / fail third die after joining, is determined.

[0056] In S107, the first die (die 61) to which the second die (die 51) has been joined is joined to the third die (die 51) according to the combination determined in S106. Note that as long as the joining combination of the first die to which the second die has been joined and the third die is the combination determined in S106, the joining order is arbitrary. Furthermore, when the joining of all the third dies included in the combination determined in S106 to the first die among the dies mounted on the dicing frame is completed, the dicing frame is replaced. Then, the third die is joined to all the first dies to which the second die has been joined according to the combination determined in S106.

[0057] Here, a process (S102) for determining a combination of the first die and the second die, and a process (S106) for determining a combination of the first die bonded to the second die and the third die will be specifically described. These processes are similar to each other except that, as data indicating the quality of each first die, the rank information acquired in S101 or the quality information acquired in S105 is used. Here, the total number of dicing frames 5 supplied to the bonding device BD is M. Also, the total number of good dies 61 (first dies) formed on the wafer 6 is Cg, the total number of defective dies is Cb, the total number of good dies 51 (second and third dies) mounted on the M dicing frames 5 is Dg, and the total number of defective dies is Db.

[0058] First, from the multiple dicing frames 5 supplied to the bonding device BD, a dicing frame that satisfies the conditions of "Cg≦Dg" and "Cb≦Db" is selected. It is possible that all dicing frames 5 supplied to the bonding device BD do not satisfy the conditions. In such a case, m dicing frames that satisfy the conditions of "Cg≦total number of good dies 51 in m dicing frames" and "Cb≦total number of defective dies 51 in m dicing frames" are selected. At this time, a dicing frame is selected so that m is the smallest. It is possible to select any dicing frame as long as the conditions are satisfied. Then, a combination of the die 61 (first die) on the wafer and the die 51 (second die and third die) on the selected m dicing frames is determined. It is possible to arbitrarily combine the dies 61 and 51 as long as they are good or defective. For example, when the rank information shown in FIG. 4 is acquired, the dicing frame D12 or D13 is selected by the above-mentioned process, and a combination of the dies 61 and 51 is determined.

[0059] In this way, according to the present embodiment, it is possible to increase the number of joining between the die 61 (first object) and the die 51 (second object and third object) that are non-defective, and the number of joining between the die 61 and the die 51 that are defective. Therefore, it is possible to suppress a decrease in the yield (improve the yield) of a joined product (device) obtained by multiple joining operations including the die 61 (first object) and two dies 51 (second object and third object).

[0060] In the process of joining the second die to the first die and the process of joining the third die to the first die to which the second die has been joined, the same type of die may be joined to the first die as in this embodiment. Therefore, the dicing frame as the second carrier may be a dicing frame as the first carrier that was not used in the process of joining the second die to the first die. On the other hand, since multiple types of dies may be mounted on the dicing frame, if the combination of the first die and the third die has a high priority, the third die may be a second die that is not joined to the first die, i.e., an unjoined second die. In addition, the dicing frame (first carrier) on which the second die used as the third die is mounted may be used in the process of joining the second die to the first die.

[0061] In the present embodiment, it is assumed that the tolerance (threshold) used in evaluating the bonding result between the first die and the second die is set from the measurement result obtained by actually measuring the intermediate bonded object obtained by actually bonding the first die and the second die, but is not limited thereto. For example, the tolerance used in evaluating the bonding result between the first die and the second die may be set from the intermediate bonded object between the first die and the second die obtained from a simulation, that is, from the simulation result. In this case, it is not necessary to actually bond the first die and the second die to obtain an intermediate bonded object, and this is effective when bonding the first die. In addition, it is also possible to directly evaluate the bonding result between the first die and the second die from the intermediate bonded object between the first die and the second die obtained from a simulation (simulation result).

[0062] In the present embodiment, the description has been given on the premise that the die 51 (second and third dies) mounted on the dicing frame 5 is bonded to all of the dies 61 (first dies) formed on the wafer 6 supplied to the bonding device BD. The reason for bonding the die 51 to the defective die 61 is that, as described above, it is necessary to bond (arrange) the die 51 to the defective die 61 in order to suppress a decrease in uniformity in the molding and bonding process. However, in the molding and bonding process, if there is no effect even if the die 61 (first die) has variations, it is not necessary to bond the die 51 (second and third dies) to the defective die 61. In this case, the combination of bonding the die 61 and the die 51 may be determined by focusing only on bonding between non-defective dies, and the bonding operation may be terminated when bonding of the die 51 (second and third dies) to all of the non-defective dies 61 (first dies) on the wafer is completed.

[0063] <Second embodiment> Fig. 6 is a diagram showing the configuration of a bonding system BDS having a plurality of bonding apparatuses BD. The bonding system BDS has a first bonding apparatus BDA and a second bonding apparatus BDB as the plurality of bonding apparatuses BD. The first bonding apparatus BDA and the second bonding apparatus BDB have the same configuration and function as the bonding apparatus BD shown in Fig. 1. Furthermore, as shown in Fig. 6, the bonding system BDS also has a wafer supply unit 11.

[0064] The wafer supply unit 11 includes a wafer pod 111 and a wafer transfer arm 112. The wafer pod 111 is configured to be removable, and is supplied from outside the apparatus with a plurality of wafers 6 stored (mounted) therein. The wafer transfer arm 112 takes out the wafer 6 from the wafer pod 111, and transfers (hands over) the wafer 6 to the bonding unit 4 of the first bonding apparatus BDA or the second bonding apparatus BDB. The wafer transfer arm 112 also transfers (returns) the wafer 6, for which bonding processing has been completed, from the bonding unit 4 of the first bonding apparatus BDA or the second bonding apparatus BDB to the wafer pod 111. Note that, in this embodiment, the wafer 6 is transferred by only one wafer transfer arm 112, but a configuration in which a plurality of wafer transfer arms 112 are used as relays may be used. In order to improve the cleanliness, after the wafer 6 is carried into the first bonding apparatus BDA or the second bonding apparatus BDB, the wafer 6 may be passed through a mechanism for cleaning the wafer 6 inside the first bonding apparatus BDA or the second bonding apparatus BDB or a mechanism for performing pre-processing for bonding. Furthermore, from the viewpoint of shortening the time required for replacing the wafer pod 111 and the time required for transporting the wafer 6, the bonding system BDS may have a plurality of wafer supply units 11.

[0065] With reference to FIG. 7, an operation in the bonding system BDS, that is, a bonding operation (bonding method) of bonding a die 51 (second object) to a die 61 (first object) of a wafer 6 and further bonding a die 51 (third object) to the die 61 to which the die 51 has been bonded, will be described. The bonding operation in the bonding system BDS is roughly divided into S201, S202, and S203, as shown in FIG. 7. In S201, a bonding process (processing in the first bonding apparatus BDA) is performed in the first bonding apparatus BDA. In S202, the wafer 6 that has been subjected to the bonding process in S201 is transported from the first bonding apparatus BDA to the second bonding apparatus BDB using the wafer transport arm 112. Note that when the wafer 6 is transported from the first bonding apparatus BDA to the second bonding apparatus BDB, it may be transported via the wafer pod 111. In S203, a bonding process (processing in the second bonding apparatus BDB) is performed in the second bonding apparatus BDB.

[0066] With reference to FIG. 8, the process (S201) in the first bonding apparatus BDA shown in FIG. 7 will be specifically described. In S2011, rank information on a plurality of dicing frames 5 and wafers 6 stored in a frame magazine 71 to be supplied (transported) to the first bonding apparatus BDA is acquired. In S2012, based on the rank information acquired in S2011, a combination of a first die (die 61) and a second die (die 51) to be bonded to the first die is determined so that non-defective products and defective products are bonded to each other. In S2013, the first die (die 61) and the second die (die 51) are bonded according to the combination determined in S2012. In S2014, the bonding result of bonding the second die to the first die in S2013 (i.e., the quality of the first die after the second die is bonded) is evaluated. Furthermore, in S202, while the wafer 6 is being transported from the first bonding apparatus BDA to the second bonding apparatus BDB, foreign matter may adhere to the wafer 6, and in this case, the quality information of the first die to which the second die is bonded may be changed. Therefore, the evaluation of the bonding result between the first die and the second die (S2014) may be performed as a process in the second bonding apparatus BDB after S202. Note that the processes in S2011 to S2014 are similar to S101 to S104 described in the first embodiment, and therefore detailed description thereof will be omitted here.

[0067] With reference to Fig. 9, the process (S203) in the second bonding device BDB shown in Fig. 7 will be specifically described. In S2031, pass / fail information (rank information) indicating the pass / fail of each of the first dies bonded to the second die is acquired. In S2032, based on the pass / fail information acquired in S2031 and data on the pass / fail of each of the third dies, a combination of the first die bonded to the second die and the third die to be bonded thereto is determined so that pass / fail products and fail / fail products are bonded together. In S2033, the first die (die 61) to which the second die (die 51) is joined is joined to the third die (die 51) according to the combination determined in S2032. Note that the processes in S2031 to S2033 are similar to those in S105 to S107 described in the first embodiment, and therefore detailed descriptions thereof will be omitted here.

[0068] In this manner, also in this embodiment, it is possible to increase the number of joining between non-defective die 61 (first object) and die 51 (second object and third object) and the number of joining between defective die 61 and die 51. Therefore, it is possible to suppress a decrease in yield (improve yield) of a joined object (device) obtained by multiple joining including the die 61 (first object) and two dies 51 (second object and third object).

[0069] <Third embodiment> A manufacturing method for manufacturing an article (such as a semiconductor IC element, a liquid crystal display element, or a MEMS) using the bonding apparatus BD or the bonding system BDS (bonding method (bonding operation)) in the above-described embodiment will be described. The manufacturing method includes a step of preparing a plurality of substrates (wafers 6) on which a plurality of first objects (dies 61) are formed, and a step of preparing a first carrier (dicing frame 5) on which a plurality of individualized second objects (dies 51) are mounted. The manufacturing method also includes a step of preparing a second carrier (dicing frame 5) on which a plurality of individualized third objects (dies 51) are mounted. The manufacturing method also includes a step of forming a bonded product by bonding the second object and the third object to the first object in order using the bonding apparatus BD or the bonding system BDS, and a step of manufacturing an article by processing the bonded bonded product in other well-known steps. The other well-known steps include probing, dicing, bonding, packaging, and the like. The manufacturing method for an article in the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to the conventional method.

[0070] The disclosure of the present specification includes the following joining method, joining apparatus, and method for manufacturing an article.

[0071] (Item 1) A bonding method for carrying a substrate on which a plurality of first objects are formed, a first carrier on which a plurality of second objects are formed, and a second carrier on which a plurality of third objects are formed to a bonding device, and bonding the second object and the third object to the first object in order, comprising: a first step of evaluating a joining result of joining the second object to the first object; a second step of determining a combination of the first object to which the second object is joined and the third object to be joined to the first object based on the joining result; a third step of joining the first object to which the second object has been joined and the third object in accordance with the combination determined in the second step; A bonding method comprising the steps of:

[0072] (Item 2) 2. The joining method according to item 1, wherein in the first step, an amount of misalignment between the first object and the second object joined to the first object is evaluated as the joining result.

[0073] (Item 3) 3. The joining method according to item 2, characterized in that in the second step, the combination is determined based on the amount of misalignment and rank information including data indicating the rank to which each of the third objects belongs.

[0074] (Item 4) the rank information includes data on the quality of the third object, In the second step, the combination is determined such that the third object, which is a non-defective product, is joined to the first object, the amount of misalignment of which is within an allowable range. 4. The bonding method according to item 3,

[0075] (Item 5) 5. The joining method according to item 4, wherein in the second step, the combination is determined such that the third object, which is a defective product, is joined to the first object, the amount of misalignment of which is outside an acceptable range.

[0076] (Item 6) 3. The joining method according to item 2, characterized in that in the second step, the combination is determined based on the positional deviation amount and rank information including data indicating a rank to which each of the first objects belongs and data indicating a rank to which each of the third objects belongs.

[0077] (Item 7) 7. The joining method according to item 6, characterized in that in the second step, for the first objects whose positional deviation amount is within an allowable range, the combinations are determined such that the first objects and the third objects are joined in order of combinations with high to low priorities that are predetermined according to combinations of ranks of the first objects and ranks of the third objects.

[0078] (Item 8) 8. The joining method according to item 7, characterized in that the priority order is predetermined such that a combination of the first object and the second object having a more similar rank has a higher priority order.

[0079] (Item 9) 9. The joining method according to item 8, characterized in that the priority order is predetermined so that a combination in which the rank of the first object and the rank of the second object are the same has the highest priority order.

[0080] (Item 10) 10. The joining method according to any one of items 4 to 9, characterized in that in the second step, the combination is determined such that the third object which is defective is joined to each of the first object whose positional deviation amount is outside an acceptable range and the first object which is defective.

[0081] (Item 11) 10. The joining method according to any one of items 4 to 9, wherein in the second step, the combination is determined so as not to join the third object to the first object that is defective.

[0082] (Item 12) 12. The bonding method according to any one of items 2 to 11, characterized in that in the first step, the positional deviation is determined from at least one of an image acquired by imaging the first object to which the second object is joined, a load value when the second object is joined to the first object, a position of at least one of a substrate holding part that holds the substrate and a carrier holding part that holds the first carrier when the second object is joined to the first object, and information indicating the presence or absence of an abnormality when the second object is joined to the first object.

[0083] (Item 13) 13. The joining method according to any one of items 1 to 12, characterized in that a process of joining the second object to the first object and a process of joining the third object to the first object to which the second object has been joined are performed by a same joining device.

[0084] (Item 14) 13. The joining method according to any one of items 1 to 12, characterized in that a process of joining the second object to the first object and a process of joining the third object to the first object to which the second object has been joined are performed in different apparatuses.

[0085] (Item 15) the second object and the third object are the same type of object, 15. The bonding method according to any one of items 1 to 14, wherein the first carrier and the second carrier are the same carrier.

[0086] (Item 16) 16. The bonding method according to any one of items 1 to 15, characterized in that the number of the first objects formed on each of the substrates is greater than the number of the second objects mounted on the first carrier and the number of the third objects mounted on the second carrier.

[0087] (Item 17) A bonding apparatus which transports a substrate on which a plurality of first objects are formed, a first carrier on which a plurality of second objects are formed, and a second carrier on which a plurality of third objects are formed, and sequentially bonds the second objects and the third objects to the first objects, an evaluation unit for evaluating a joining result of joining the second object to the first object; a determination unit that determines a combination of the first object to which the second object is joined and the third object to be joined to the first object based on the joining result; a joining unit that joins the first object to which the second object is joined and the third object in accordance with the combination determined by the determination unit; A joining device comprising:

[0088] (Item 18) Providing a substrate having a first object formed thereon; Providing a first carrier having a second object mounted thereon; providing a second carrier having a third object mounted thereon; A step of forming a joined object by joining the second object and the third object to the first object in order according to the joining method according to any one of items 1 to 16; treating the bonded article to produce an article; A method for producing an article, comprising the steps of:

[0089] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0090] BD: Bonding device 3: Pickup section 4: Bonding section 5: Dicing frame 51: Die 6: Wafer 61: Die 441: Control section

Claims

1. A bonding method for carrying a substrate on which a plurality of first objects are formed, a first carrier on which a plurality of second objects are formed, and a second carrier on which a plurality of third objects are formed to a bonding device, and bonding the second object and the third object to the first object in order, comprising: a first step of evaluating a joining result of joining the second object to the first object; a second step of determining a combination of the first object to which the second object is joined and the third object to be joined to the first object based on the joining result; a third step of joining the first object to which the second object has been joined and the third object in accordance with the combination determined in the second step; A bonding method comprising the steps of:

2. 2. The joining method according to claim 1, wherein in the first step, an amount of misalignment between the first object and the second object joined to the first object is evaluated as the joining result.

3. The joining method according to claim 2, characterized in that in the second step, the combination is determined based on the amount of positional deviation and rank information including data indicating the rank to which each of the third objects belongs.

4. the rank information includes data on the quality of the third object, In the second step, the combination is determined such that the third object, which is a non-defective product, is joined to the first object, the amount of misalignment of which is within an allowable range. The bonding method according to claim 3 .

5. 5. The joining method according to claim 4, wherein in the second step, the combination is determined such that the third object, which is a defective product, is joined to the first object, the positional deviation amount of which is outside an allowable range.

6. The joining method according to claim 2, characterized in that in the second step, the combination is determined based on the positional deviation amount and rank information including data indicating a rank to which each of the first objects belongs and data indicating a rank to which each of the third objects belongs.

7. 7. The joining method according to claim 6, wherein in the second step, for the first objects whose positional deviation amount is within an acceptable range, the combinations are determined such that the first objects and the third objects are joined in order of combinations with high to low priorities that are predetermined according to combinations of ranks of the first objects and ranks of the third objects.

8. The joining method according to claim 7 , wherein the priority order is determined in advance such that a combination of the first object and the second object having a more similar rank has a higher priority order.

9. 9. The joining method according to claim 8, wherein the priority order is determined in advance such that a combination in which the rank of the first object and the rank of the second object are the same has the highest priority order.

10. 5. The joining method according to claim 4, wherein in the second step, the combination is determined such that the third object which is defective is joined to each of the first object whose positional deviation amount is outside an acceptable range and each of the first objects which are defective.

11. 5. The joining method according to claim 4, wherein in the second step, the combination is determined so as not to join the third object to the first object which is defective.

12. 3. The joining method according to claim 2, wherein in the first step, the positional deviation is determined from at least one of an image acquired by imaging the first object to which the second object is joined, a load value when the second object is joined to the first object, a position of at least one of a substrate holding part that holds the substrate and a carrier holding part that holds the first carrier when the second object is joined to the first object, and information indicating the presence or absence of an abnormality when the second object is joined to the first object.

13. 2. The joining method according to claim 1, wherein the process of joining the second object to the first object and the process of joining the third object to the first object to which the second object has been joined are performed by a same joining apparatus.

14. 2. The joining method according to claim 1, wherein the process of joining the second object to the first object and the process of joining the third object to the first object to which the second object has been joined are performed in different apparatuses.

15. the second object and the third object are objects of the same type, 2. The bonding method according to claim 1, wherein the first carrier and the second carrier are the same carrier.

16. The bonding method according to claim 1, characterized in that the number of the first objects formed on each of the substrates is greater than the number of the second objects mounted on the first carrier and the number of the third objects mounted on the second carrier.

17. A bonding apparatus which transports a substrate on which a plurality of first objects are formed, a first carrier on which a plurality of second objects are formed, and a second carrier on which a plurality of third objects are formed, and sequentially bonds the second objects and the third objects to the first objects, an evaluation unit that evaluates a joining result of joining the second object to the first object; a determination unit that determines a combination of the first object to which the second object is joined and the third object to be joined to the first object based on the joining result; a joining unit that joins the first object to which the second object is joined and the third object in accordance with the combination determined by the determination unit; A joining device comprising:

18. Providing a substrate having a first object formed thereon; Providing a first carrier having a second object mounted thereon; providing a second carrier having a third object mounted thereon; forming a joined object by joining the second object and the third object to the first object in sequence according to the joining method according to any one of claims 1 to 16; treating the bonded article to produce an article; A method for producing an article, comprising the steps of:

Images