Method for manufacturing interposer

Abstract

To provide a method for manufacturing an interposer or a coreless package substrate which uses a glass substrate as a temporary support.SOLUTION: An interposer or a coreless package substrate is obtained by: using, as a temporary support substrate, a glass sheet having a thickness of 0.7 mm or less and a surface roughness (Ra) of 20 nm or less; using, as a substrate material for temporarily bonding to the temporary support substrate, a heat-resistant polymer film having a coefficient of thermal expansion (CTE) in the range of -10 ppm / K to +10 ppm / K; forming wiring or the like on the heat-resistant polymer film in a state where the heat-resistant polymer film is temporarily bonded to the glass substrate; and after a chip is mounted as needed, peeling the heat-resistant polymer film with the wiring or the like from the glass substrate finally.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing an interposer based on a film substrate. [Background technology]

[0002] In recent years, as semiconductor devices have become faster and more highly integrated, there is a demand for narrower pitches of bonding terminals used for bonding to semiconductor chips and finer wiring within the substrate for package substrates on which semiconductor chips are mounted. On the other hand, bonding between package substrates and motherboards is required to be achieved by bonding terminals arranged at a pitch that is almost the same as that of conventional printed wiring board design rules. In response to these demands, a technology has been adopted in which a multilayer wiring substrate including fine wiring, also called an interposer, is provided between the package substrate and the semiconductor chip.

[0003] Conventional interposers are manufactured using high-density printed wiring board manufacturing technology, and although the substrate materials used may be silicon substrates, glass substrates, or other materials different from conventional printed wiring boards, the overall structure and manufacturing method are an extension of printed wiring board technology.

[0004] Meanwhile, as disclosed in Patent Document 1, a technique has been developed in which a temporary support substrate is used, a multilayer wiring layer is formed thereon, and an interposer is obtained by finally peeling it off from the temporary support substrate. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Patent Publication No. 2022-121999 Summary of the Invention [Problem to be solved by the invention]

[0006] In the method using a temporary support substrate, the most difficult step is peeling the finished interposer from the temporary support substrate. In order to peel the two flat plates, at least one of them must be deformed. A rigid plate is usually used as the temporary support substrate, and if the interposer side has an extremely thin structure, the deformation of the interposer side will be dominant in the peeling process. The stronger the adhesion between the temporary support substrate and the interposer, the more likely the deformation of the interposer side will occur. Therefore, various efforts have been made to reduce the adhesive strength between the two during peeling. However, a satisfactory solution has not yet been found.

[0007] An object of the present invention is to provide a manufacturing method for an interposer using a temporary support substrate, which allows easy peeling. [Means for solving the problem]

[0008] As a result of intensive research into achieving this object, the inventors have discovered that by using a glass plate as a temporary support substrate and using a heat-resistant polymer film with a coefficient of linear expansion (CTE) in the range of -10 ppm / K to +10 ppm / K as a substrate material for temporarily adhering to the temporary support substrate, it is possible to peel the interposer portion from the glass plate, which is the temporary support substrate, without damaging the interposer portion, and have completed the invention, which is represented below.

[0009] [1] A method for manufacturing an interposer, comprising the steps of: temporarily bonding a heat-resistant polymer film having a coefficient of linear expansion (CTE) of -5 ppm / K to +10 ppm / K to a glass substrate having a thickness of 1.5 mm or less and a surface roughness Ra of 20 nm or less; performing circuit processing on the surface of the heat-resistant polymer film opposite the glass substrate to form a conductor circuit pattern by at least a full additive method; and then peeling the heat-resistant polymer film off of the glass substrate.

[0010] [2] A method for manufacturing an interposer, comprising the steps of: temporarily adhering a heat-resistant polymer film having a coefficient of linear expansion (CTE) of -5 ppm / K to +10 ppm / K to a glass substrate having a thickness of 1.5 mm or less and a surface roughness Ra of 20 nm or less; performing circuit processing on the surface of the heat-resistant polymer film opposite the glass substrate to form a conductor circuit pattern by at least a semi-additive method; and then peeling the heat-resistant polymer film off of the glass substrate.

[0011] [3] A method for manufacturing an interposer, comprising the steps of: temporarily adhering a heat-resistant polymer film having a coefficient of linear expansion (CTE) of -5 ppm / K to +10 ppm / K to a glass substrate having a thickness of 1.5 mm or less and a surface roughness Ra of 20 nm or less; performing circuit processing on the surface of the heat-resistant polymer film opposite the glass substrate to form a conductor circuit pattern by at least a subtractive method; and then peeling the heat-resistant polymer film off of the glass substrate.

[0012] [4] The method for producing an interposer according to any one of [1] to [3], wherein the conductor circuit pattern has two or more layers.

[0013] [5] The method for producing an interposer according to any one of [1] to [4], wherein the peeling is performed after a semiconductor chip is mounted on the conductor circuit pattern. Effect of the Invention

[0014] According to the present invention, after the circuit processing to become the interposer is performed on the temporary support substrate by the above-mentioned process, the interposer portion can be peeled off from the glass plate serving as the temporary support substrate without damaging it. Furthermore, according to the present invention, even if a semiconductor chip is mounted on the interposer before peeling the interposer portion from the temporary support substrate and then the temporary support substrate is peeled off, the interposer and the semiconductor chip, and further the electrical connection between the semiconductor chip and the interposer can be peeled off without damaging them. [Brief description of the drawings]

[0015] [Figure 1] FIG. 1 is a schematic process diagram showing a case where circuit processing is performed by a full additive method. [Diagram 2] FIG. 1 is a schematic process diagram showing a circuit fabrication process using a semi-additive method. [Diagram 3] FIG. 2 is a schematic process diagram for circuit processing using a subtractive method. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0016] In the present invention, it is preferable to use a glass plate as the temporary support substrate. The thickness of the glass plate in the present invention is preferably 1.5 mm or less. Regarding the thickness of the glass plate, when the area of ​​the temporary support substrate is 16000 square cm or more, it is preferably 1.5 mm or less, more preferably 1.2 mm or less, even more preferably 1.0 mm or less, and particularly preferably 0.7 mm or less. When the area of ​​the temporary support substrate is 7000 square cm or less, it is preferably 1.2 mm or less, more preferably 1.0 mm or less, even more preferably 0.7 mm or less, and particularly preferably 0.5 mm or less. When the area of ​​the temporary support substrate is 4100 square cm or less, it is preferably 1.0 mm or less, more preferably 0.7 mm or less, even more preferably 0.5 mm or less, and particularly preferably 0.4 mm or less. When the area of ​​the temporary support substrate is 2000 square cm or less, it is preferably 0.7 mm or less, more preferably 0.5 mm or less, and particularly preferably 0.35 mm or less. When the thickness of the glass plate is within this range, it is possible to warp the glass plate side during peeling, and the warping of the interposer side can be suppressed to the minimum necessary, which results in a dramatic reduction in damage to the interposer side. Furthermore, even if a semiconductor chip is mounted on the interposer before peeling, the stress applied to the semiconductor chip and the electrical connection point between the chip and the body of the interposer can be suppressed to the minimum.

[0017] The surface roughness Ra of the glass plate used as the temporary support substrate in the present invention is preferably 20 nm or less, more preferably 12 nm or less, and even more preferably 9 nm or less. There is no particular lower limit. If the Ra of the glass substrate is out of this range, there may be spots with high adhesive strength when the glass substrate and the interposer are peeled off, which may prevent smooth peeling and cause damage to the interposer.

[0018] Glass substrates include quartz glass, high silicate glass (96% silica), soda-lime glass, lead glass, aluminoborosilicate glass, borosilicate glass (Pyrex (registered trademark)), borosilicate glass (alkali-free), borosilicate glass (microsheet), aluminosilicate glass, etc. Among these, those with a linear expansion coefficient of 5 ppm / °C or less are preferable, and commercially available products such as liquid crystal glass "Corning (registered trademark) 7059", "Corning (registered trademark) 1737", and "EAGLE" manufactured by Corning Incorporated, "AN100" manufactured by Asahi Glass Co., Ltd., "OA10" manufactured by Nippon Electric Glass Co., Ltd., and "AF32" manufactured by SCHOTT are preferable.

[0019] In the present invention, the insulating substrate film adhered to the glass plate, which is the temporary support substrate, is preferably a heat-resistant polymer film. Here, the heat-resistant polymer film is a so-called engineering plastic, and specifically, a heat-resistant polymer film such as polyimide, aromatic polyamide, polybenzazole, aromatic polyester, polyamideimide, polyesterimide, polyetheretherketone, polyphenylene sulfide, polyphenylene ether, polybenzocyclobutene, polyallyl ether, etc. can be used. Since so-called liquid crystal polymer is a kind of aromatic polyester, it is included in the heat-resistant polymer film of the present invention. Of these polymer films, preferably, a polymer film having a glass transition temperature of 300°C or more, preferably a tensile modulus of 5 to 20 GPa, and a coefficient of linear expansion (CTE) of -10 to +10 ppm / K, preferably -3 to 9 ppm / K, more preferably -2 to +6 ppm / K can be preferably used. The tensile modulus and CTE of the polymer film can be adjusted by controlling the orientation of the polymer chain in the process of forming the film.

[0020] In the present invention, it is particularly preferable to use a liquid crystal polymer film, a polyimide film, a polybenzazole film, or a polyimidebenzoxazole film, which has the above-mentioned excellent film properties.

[0021] The polyimide film in the present invention is a heat-resistant organic polymer film having an imide bond in the main chain. In general, the polyimide film is obtained by polymerizing a tetracarboxylic anhydride and a diamine in a solution to obtain a polyamic acid, forming the obtained polyamic acid into a film, and then dehydrating and ring-closing the polyamic acid moiety to obtain a polyimide film.

[0022] In the present invention, a film made of a polyimide obtained by reacting an aromatic tetracarboxylic dianhydride with an aromatic diamine is preferred, and a polyimide film obtained by reacting a tetracarboxylic dianhydride containing 70 mol % or more of pyromellitic dianhydride with a diamine containing 70 mol % or more of an aromatic diamine having a paraphenylenediamine and / or a benzoxazole skeleton is more preferred. Also, a polyimide film obtained by reacting a tetracarboxylic dianhydride containing 1 to 30 mol % of a tetracarboxylic dianhydride having an ether bond in the molecule with an aromatic diamine containing 1 to 30 mol % of a diamine having an ether bond in the molecule is preferred.

[0023] In general, a polyimide film is obtained by applying a polyamic acid (polyimide precursor) solution obtained by reacting diamines with tetracarboxylic acids in a solvent onto a support for producing a polyimide film, drying the solution to form a green film (also called a "precursor film" or "polyamic acid film"), and then subjecting the green film to high-temperature heat treatment on the support for producing a polyimide film or after being peeled off from the support to cause a dehydration ring-closing reaction.

[0024] The polyimide film preferably used in the present invention is, for example, a polyimide film obtained from a polyimide resin having the following chemical composition. Polyimide resin obtained from pyromellitic acid and diaminodiphenyl ether, Polyimide resin obtained from biphenyltetracarboxylic acid and phenylenediamine, Polyimide resin obtained from pyromellitic acid and phenylenediamine, Polyimide resins using diamine compounds having a benzoxazole skeleton as the diamine component, Polyimide resins using cyclohexyltetracarboxylic acid and cyclobutanetetracarboxylic acid, Polyimide resin using alicyclic tetracarboxylic acid and aromatic diamine with amide bond Polyimide resins using monomers containing fluorine, Polyimide resin using monomers containing ions

[0025] These are examples of the main components of the tetracarboxylic acid or diamine, respectively, and it is also possible to use polyimide resins copolymerized by blending a second or third component, polyimide resins polymerized by combining polyimides of multiple compositions, polyimide resins polymer blended or alloyed, and polyimide resins into which inorganic fillers or polydimethylsiloxane components have been introduced. It is also possible to use polyimide films having a structure in which polyimide resins of different compositions are laminated in the thickness direction.

[0026] In the present invention, it is preferable to use a heat-resistant polymer film having an elastic modulus of preferably 3 GPa or more, more preferably 4 GPa or more, and even more preferably 5 GPa or more, and preferably 15 GPa or less, more preferably 12 GPa or less, as the heat-resistant polymer film. If the elastic modulus is within this range, when the interposer is used by folding the end portion, that is, when used in the form of a folded package, folding is possible and damage to the wiring layer can be minimized. If the elastic modulus is lower than this range, the polymer film may be significantly deformed when folded, which may cause disconnection of the wiring layer. On the other hand, if the elastic modulus is too high, folding may be difficult.

[0027] The polymer film of the present invention is preferably a polyimide film having a breaking elongation of 3% or more, preferably 5% or more, more preferably 7% or more, and even more preferably 9% or more. The breaking elongation is also a measure of foldability, and if the breaking elongation is low, the film is brittle and easily cracked, so that cracks may occur when the film is bent, but if the breaking elongation is 5% or more, the film can be bent.

[0028] Furthermore, the polymer film of the present invention is preferably a polyimide film having a thickness of 3 μm to 75 μm. The film thickness is preferably 6 μm to 60 μm, and more preferably 12 μm to 45 μm. The film thickness is related to the foldability, and if the film thickness is within a certain range, folding becomes relatively easy.

[0029] In the present invention, when bonding a glass substrate and a heat-resistant polymer film, a bonding method can be used in which the bonding surfaces of both substrates are subjected to surface treatment before being pressed together, without using a so-called general adhesive.

[0030] The surface treatment of the glass substrate is preferably a treatment with a coupling agent, more preferably a treatment with a silane coupling agent, preferably a silane coupling agent having an amino group or a carboxyl group at the terminal.

[0031] Examples of coupling agent treatment include a method of immersing a glass substrate in a solution of a coupling agent, removing excess solution, drying, and heat fixing, a method of spraying a coupling agent solution or passing through an environment where the coupling agent solution is sprayed in a mist to form an ultra-thin film on the surface, and a method of vaporizing the coupling agent itself and depositing it directly on the glass substrate. In any case, it is preferable to have a final step of reacting the coupling agent with the glass substrate surface by heating or the like. However, this reaction step can also be performed simultaneously with the adhesion step with the heat-resistant polymer film.

[0032] The glass substrate surface is preferably cleaned before the coupling agent treatment. In addition to general wet cleaning, the surface can be cleaned using a dry cleaning method such as vacuum plasma treatment, atmospheric plasma treatment, or UV ozone treatment.

[0033] In the present invention, the surface treatment of the heat-resistant polymer film can be preferably performed by vacuum plasma treatment or atmospheric pressure plasma treatment. In either case, the plasma treatment can be preferably performed in an atmosphere containing nitrogen and oxygen.

[0034] As a surface treatment method for the heat-resistant polymer film in the present invention, UV ozone treatment can also be used. This surface treatment method is particularly effective for polyester films, and can be preferably used for polyethylene terephthalate films, polyethylene naphthalate films, and liquid crystal polymer films. By such surface treatment, active groups capable of chemical reactions can be introduced into the surface of the heat-resistant polymer film. In addition, the density of the active groups can be controlled by the treatment conditions.

[0035] In the present invention, when the glass substrate side is treated with a silane coupling agent, it can be interpreted that the surface of the heat-resistant polymer film that is in contact with the glass substrate is in a state of being adhered to the substrate via the condensate of the silane coupling agent. The presence of the silane coupling agent condensate layer is the result of the silane coupling agent treatment. The thickness of the silane coupling agent condensate layer is extremely thin, and is at a level that can be practically ignored when compared with the thickness of the substrate and the polymer film. Therefore, the flatness of the polymer film layer is almost dominated by the substrate, so that an extremely smooth surface can be obtained. This is an essential characteristic in the formation of electronic display devices that require large-area, high-precision processing. When a polymer film is used without a support (substrate) or is adhered to a substrate with a general adhesive or pressure-sensitive adhesive having a thickness of several μm to several tens of μm, undulations occur on the polymer film surface when the polymer film is folded, and the presence of this undulation can be fatal in microfabrication that requires extremely precise exposure operations.

[0036] The heat resistance of the silane coupling agent condensate layer is higher than that of adhesives made of general organic substances, and can fully withstand high temperature environments in various processes for forming electronic display devices, more specifically, in processes for forming amorphous silicon thin films, polysilicon thin films, oxide semiconductor thin films, compound semiconductor films, etc. Furthermore, it can fully withstand chemicals, solvents, plasma processing, etc. used in processing processes such as exposure, development, etching, and resist peeling. Therefore, the electronic display device of the present invention can directly perform processing required for electronic display devices on the polymer film of the laminate obtained by laminating a polymer film on a substrate via a silane coupling agent condensate layer. According to this processing method, it is possible to treat the flexible film as if it were a single substrate and perform the processing using a conventional electronic display device manufacturing device.

[0037] Next, the application of the full additive method in the present invention will be described with reference to the drawings. The schematic steps of circuit processing using the full additive method are shown in FIG. [1] Film / glass adhesion In this schematic diagram, the state after the glass substrate 10 and the heat-resistant polymer film 20 have been bonded together will be described. [2] Catalyst addition and activation An electroless plating catalyst is applied in a specified pattern to the surface of the heat-resistant polymer film (top of the figure) and activated. Known substances such as silver-palladium colloidal solutions can be used as electroless plating catalysts. The catalyst can be applied in advance in a pattern by using a method such as inkjet printing. It is also possible to use a method in which the catalyst is applied to the front surface and only the necessary areas are activated. In the figure, 31 indicates the catalyst that has been activated in a specified pattern. Although not shown in this schematic diagram of the process, it is also possible to cover the areas to which the catalyst is not applied or the areas not to be metallized with a plating-resistant resist pattern. [3] Electroless plating By immersing in an electroless plating bath, an electroless plating layer 40 can be grown on the activated catalyst portion. Generally, electroless copper plating can be used. Alternatively, electroless nickel-phosphorus plating, electroless nickel-boron plating, etc. may be applied. Although not shown in the figure, electroless copper plating may be followed by electroless tin plating on the portion that will become the pad for mounting the semiconductor chip. Alternatively, electroless copper plating may be followed by electroless nickel plating and electroless gold plating. [4] Peeling The glass substrate 10 and the heat-resistant polymer film 20 are peeled off at their interface to obtain a film-based interposer.

[0038] Next, the application of the semi-additive method in the present invention will be described with reference to the drawings. The schematic steps of circuit processing using the semi-additive method are shown in FIG. [1] Film / glass adhesion In this schematic diagram, the state after the glass substrate 10 and the heat-resistant polymer film 20 have been bonded together will be described. [2] Catalyst addition and activation In the semi-additive method, an electroless plating catalyst 30 is applied to the entire surface of a heat-resistant polymer film (without patterning) and activated. [3] Undercoat layer formation (electroless plating) By immersing the substrate in an electroless plating bath, an underlayer (electroless plating layer) 40 is formed on the activated catalyst portion. Generally, electroless copper plating can be used as the underlayer. Alternatively, electroless nickel-phosphorus plating, electroless nickel-boron plating, etc. may also be used. [4] Negative resist formation A resist 51 is formed in a form that will be a negative image of the circuit pattern that will ultimately be obtained. It is preferable to use a photoresist for forming the resist, and a liquid or dry film type photosensitive resist may be used. It is preferable to use a dry film resist, which can easily ensure uniformity in thickness. [5] Thick (electro) plating Electricity is passed through the base layer, which is a conductive film (metal film), and metal is thickened on the pattern area by electroplating. In the diagram, 61 is the thickened metal area. Generally, copper electroplating is sufficient. Furthermore, tin plating, which will become the pads for chip mounting, or gold plating after nickel plating may also be performed. [6] Resist stripping [4] The negative resist formed in step is peeled off. In the case of a typical dry film resist, it is immersed in an alkaline aqueous solution, which causes it to swell and peel off. [7] Base layer removal When the resist is peeled off, the underlayer (electroless plating layer) applied in step [3] is exposed. This is dissolved and removed using an etching solution. Because the underlayer is sufficiently thinner than the thick circuit area, the metal in the thick circuit area is maintained. [8] Peeling The glass substrate 10 and the heat-resistant polymer film 20 are peeled off at their interface to obtain a film-based interposer.

[0039] Next, the case where the subtractive method is applied in the present invention will be described with reference to the drawings. The outline of the process of circuit processing by the subtractive method is shown in FIG. [1] Film / glass adhesion In this schematic diagram, the state after the glass substrate 10 and the heat-resistant polymer film 20 have been bonded together will be described. [2] Catalyst addition and activation First, the electroless plating catalyst 30 is applied to the entire surface of the heat-resistant polymer film (without patterning) to activate it. [3] Undercoat layer formation (electroless plating) By immersing the substrate in an electroless plating bath, an underlayer (electroless plating layer) 41 is formed on the activated catalyst portion. Generally, electroless copper plating can be used as the underlayer. Alternatively, electroless nickel-phosphorus plating, electroless nickel-boron plating, etc. may also be used. [4] Thick (electro) plating Electricity is passed through the base layer, which is a conductive film (metal film), and the metal is thickened by electroplating. In the diagram, 61 is the thickened metal part. Generally, copper electroplating is sufficient. Furthermore, tin plating, which will become the pads for chip mounting, or gold plating after nickel plating may also be performed. The process up to this point does not involve patterning, and is what is known as a solid film. [5] Etching resist formation An etching resist 70 is formed in a form that will become a positive image of the circuit pattern that will ultimately be obtained. Photoresist is preferably used to form the resist, and a liquid or dry film type photosensitive resist may be used. It is preferable to use a dry film resist, which can easily ensure uniformity in thickness. If low cost is required, the resist pattern may be formed by printing an etching resist ink. [6] Etching An etching solution is used to dissolve and remove the metal from the areas not covered by the resist. [7] Resist stripping [5] The etching resist formed in step is peeled off. In the case of a general dry film resist, it is immersed in an alkaline aqueous solution and then peeled off. After this, although not shown in the figure, tin plating, nickel plating, gold plating, etc. can be performed. All of these can be electroless plating. When electroplating is performed, a circuit for electrical continuity is formed in advance in the pattern design, and unnecessary circuit parts are punched out and disconnected, or a circuit for electroplating can be formed in the part that will be discarded when the periphery is cut and processed into the final package shape. [8] Peeling The glass substrate 10 and the heat-resistant polymer film 20 are peeled off at their interface to obtain a film-based interposer.

[0040] According to the present invention, it is possible to manufacture a film-based interposer by utilizing existing manufacturing equipment designed and manufactured on the premise of using a glass substrate, such as manufacturing equipment for liquid crystal displays, OLED displays, plasma display panels, or solar cells. The manufacturing equipment for these products is gradually moving in the direction of larger areas. On the other hand, although old equipment still has a sufficient life as a manufacturing equipment, the operating rate is decreasing as the main manufacturing body shifts to new large-area equipment. Since the present invention can manufacture a completely different genre of product using such old equipment with a low operating rate, it is possible to contribute to the SDGs by creating profits by increasing the operating rate and extending the life of old equipment as a whole, and by avoiding the disposal of equipment.

[0041] Although the present invention has been described mainly with reference to interposers, it goes without saying that the present invention can also be applied to similar products, i.e., film-based printed wiring boards (flexible printed wiring boards), COF, TAB, package substrates, etc. [Explanation of symbols]

[0042] 10 Glass substrate 20 Heat-resistant polymer film 30 Catalyst layer 31 Activated catalyst layer 40 Undercoat layer (electroless plating layer) 41 Undercoat layer (electroless plating layer) 51 Negative Resist 61 Thick (electro)plated layer 70 Etching resist

Claims

1. A method for manufacturing an interposer, comprising the steps of: temporarily bonding a heat-resistant polymer film having a coefficient of linear expansion (CTE) of -5 ppm / K to +10 ppm / K to a glass substrate having a thickness of 1.5 mm or less and a surface roughness Ra of 20 nm or less; performing circuit processing on the surface of the heat-resistant polymer film opposite the glass substrate to form a conductor circuit pattern by at least a full additive method; and then peeling the heat-resistant polymer film off of the glass substrate.

2. A method for manufacturing an interposer, comprising the steps of: temporarily bonding a heat-resistant polymer film having a coefficient of linear expansion (CTE) of -5 ppm / K to +10 ppm / K to a glass substrate having a thickness of 1.5 mm or less and a surface roughness Ra of 20 nm or less; performing circuit processing on the surface of the heat-resistant polymer film opposite the glass substrate to form a conductor circuit pattern by at least a semi-additive method; and then peeling the heat-resistant polymer film off of the glass substrate.

3. A method for manufacturing an interposer, comprising the steps of: temporarily bonding a heat-resistant polymer film having a coefficient of linear expansion (CTE) of -5 ppm / K to +10 ppm / K to a glass substrate having a thickness of 1.5 mm or less and a surface roughness Ra of 20 nm or less; performing circuit processing on the surface of the heat-resistant polymer film opposite the glass substrate to form a conductor circuit pattern by at least a subtractive method; and then peeling the heat-resistant polymer film off of the glass substrate.

4. 2. The method for manufacturing an interposer according to claim 1, wherein the conductor circuit pattern has two or more layers.

5. 5. The method for manufacturing an interposer according to claim 1, wherein the peeling is performed after a semiconductor chip is mounted on the conductor circuit pattern.

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