Multilayer capacitor

Abstract

To provide a multilayer capacitor with improved reliability by improving the connectivity of an internal electrode.SOLUTION: A multilayer capacitor according to the present disclosure includes a capacitor body including a dielectric layer and an internal electrode, and an external electrode disposed on the outside of the capacitor body, the capacitor body includes titanium (Ti) and indium (In), and the content of the indium (In) per 100 moles of the titanium (Ti) in the entire capacitor body is 0.2 moles to 4 moles.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] This description relates to stacked capacitors. [Background technology]

[0002] Recently, as electronic devices have rapidly become more multifunctional and smaller, electronic components have also rapidly become smaller and their performance has improved. In addition, there has been a significant increase in the demand for high reliability of electronic components for use in electrical devices such as automobiles and network facilities, and for industrial applications.

[0003] To meet these market demands, the race to develop technology for manual components such as inductors, capacitors, and resistors is accelerating. In particular, there is a need for a lot of effort to dominate the market by developing various products for multilayer ceramic capacitors (MLCCs), which are manual components and the usage and volume of which is constantly increasing.

[0004] A multilayer capacitor is a storage device manufactured by stacking dielectric layers and internal electrodes, and is used in various electronic devices such as mobile phones, notebook computers, and LCD TVs.

[0005] Recently, with the development of technology, there is a demand for miniaturization and high capacity of multilayer capacitors, which requires the thickness of the internal electrodes and dielectric layers to be reduced. As the thickness of the dielectric layers decreases, the electric field strength applied to each layer becomes relatively stronger, which leads to a decrease in the reliability of the capacitor and a decrease in capacitance due to deterioration of electrode connectivity. Summary of the Invention [Problem to be solved by the invention]

[0006] An aspect of the embodiment provides a multilayer capacitor having improved reliability due to improved connectivity between internal electrodes.

[0007] However, the problems to be solved by the embodiments are not limited to the above problems, and can be variously expanded within the scope of the technical ideas included in the embodiments. [Means for solving the problem]

[0008] According to one embodiment, a multilayer capacitor includes a capacitor body including a dielectric layer and an internal electrode, and an external electrode disposed on the outside of the capacitor body, the capacitor body including titanium (Ti) and indium (In), and the content of the indium (In) per 100 moles of the titanium (Ti) in the entire capacitor body is 0.2 moles to 4 moles.

[0009] The dielectric layer may include a barium titanate-based compound as a main component and indium (In) as a secondary component.

[0010] The internal electrodes may include a conductive metal and indium (In).

[0011] The dielectric layer includes a center portion of the dielectric layer and an interface portion of the dielectric layer located on a surface of the center portion of the dielectric layer and in contact with the internal electrode, and when the content of In per 100 moles of Ti at the interface portion of the dielectric layer is A (mol), and the content of In per 100 moles of Ti at the center portion of the dielectric layer is B (mol), A>B can be satisfied.

[0012] The multilayer capacitor can satisfy A≧2B.

[0013] The A may be 1.0 mole to 1.5 moles.

[0014] The B may be 0.5 mol to 1.0 mol.

[0015] The internal electrode includes a center portion of the internal electrode and an interface portion of the internal electrode located on a surface of the center portion of the internal electrode and in contact with the dielectric layer, and when the content of In per 100 moles of Ni at the interface portion of the internal electrode is C (mol), and the content of In per 100 moles of Ni at the center portion of the internal electrode is D (mol), C>D can be satisfied.

[0016] The multilayer capacitor can satisfy C≧3D.

[0017] The C may be 0.5 mol to 1.0 mol.

[0018] The D may be 0.05 mol to 0.5 mol.

[0019] According to another embodiment, a multilayer capacitor includes a capacitor body including a dielectric layer and an internal electrode, and an external electrode disposed on the outside of the capacitor body, the multilayer capacitor includes titanium (Ti) and indium (In), and the content of the indium (In) per 100 moles of the titanium (Ti) in the entire multilayer capacitor is 0.2 moles to 4 moles.

[0020] The external electrode may include a sintered metal layer in contact with the capacitor body.

[0021] The sintered metal layer may include a conductive metal and indium (In).

[0022] The dielectric layer includes a center portion of the dielectric layer and an interface portion of the dielectric layer located on a surface of the center portion of the dielectric layer and in contact with the internal electrode, and when the content of In per 100 moles of Ti at the interface portion of the dielectric layer is A (mol), and the content of In per 100 moles of Ti at the center portion of the dielectric layer is B (mol), A>B can be satisfied.

[0023] The multilayer capacitor can satisfy A≧2B.

[0024] The A may be 1.0 mole to 1.5 moles.

[0025] The B may be 0.5 mol to 1.0 mol.

[0026] The internal electrode includes a center portion of the internal electrode and an interface portion of the internal electrode located on a surface of the center portion of the internal electrode and in contact with the dielectric layer, and when the content of In per 100 moles of Ni at the interface portion of the internal electrode is C (mol), and the content of In per 100 moles of Ni at the center portion of the internal electrode is D (mol), C>D can be satisfied.

[0027] The multilayer capacitor can satisfy C≧3D.

[0028] The C may be 0.5 mol to 1.0 mol.

[0029] The D may be 0.05 mol to 0.5 mol. Effect of the Invention

[0030] The multilayer capacitor according to the embodiment has an advantage in that the connectivity of the internal electrodes is improved, thereby improving reliability.

[0031] However, the various advantageous and beneficial effects of the present invention are not limited to the above, and will be more easily understood in the course of describing specific embodiments of the present invention. [Brief description of the drawings]

[0032] [Figure 1] 1 is a perspective view showing a multilayer capacitor according to an embodiment; [Diagram 2] 2 is a cross-sectional view of the multilayer capacitor taken along line II' in FIG. [Diagram 3] 2 is an exploded perspective view showing a laminated structure of internal electrodes of the capacitor body of FIG. 1. [Figure 4]The TEM images were obtained by observing the center of the dielectric layer (labeled "BT"), the interface between the dielectric layer and the internal electrode (labeled "Ni-BT INTERFACE"), and the center of the internal electrode (labeled "Ni") of a cross-sectional sample of a multilayer capacitor using a transmission electron microscope (TEM). [Diagram 5] This is a TEM image of FIG. 4 mapped with Ti. [Figure 6] This is a TEM image of Figure 4 mapped with In. [Figure 7] This is a TEM image of Figure 4 mapped with Ni. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0033] Hereinafter, the present invention will be described in detail with reference to the attached drawings so that a person having ordinary skill in the art to which the present invention pertains can easily carry out the present invention. In the drawings, parts unnecessary for the explanation are omitted in order to clearly explain the present invention, and the same or similar components are given the same reference numerals throughout the specification. In addition, the attached drawings are merely for the purpose of making it possible to easily understand the embodiments disclosed in the present specification, and the technical ideas disclosed in the present specification are not limited by the attached drawings, and it should be understood that the drawings include all modifications, equivalents, and alternatives included in the ideas and technical scope of the present invention. In addition, some components are exaggerated, omitted, or illustrated roughly, and the size of each component does not entirely reflect the actual size.

[0034] Throughout the specification, when a part is said to "comprise" a certain element, this means that it can further include other elements, but not to the exclusion of other elements, unless specifically stated to the contrary.

[0035] Throughout the specification, the "stacking direction" refers to the direction in which the components are stacked one on top of the other, which may be the "thickness direction" perpendicular to the broad surface (principal surface) of the sheet-like component, but corresponds to the T-axis direction in the drawings. And the "side" refers to the direction extending from the edge of the sheet-like component parallel to the broad surface (principal surface) and may be the "planar direction", but corresponds to the L-axis direction in the drawings. And the W-axis direction in the drawings may be the "width direction".

[0036] Hereinafter, various embodiments and modifications will be described in detail with reference to the drawings.

[0037] FIG. 1 is a perspective view showing a multilayer capacitor 100 according to one embodiment, FIG. 2 is a cross-sectional view of the multilayer capacitor 100 cut along line II' in FIG. 1, and FIG. 3 is an exploded perspective view showing the stacked structure of the internal electrodes of the capacitor body 110 in FIG. 1.

[0038] To clearly explain the present embodiment, the directions are defined as follows: the L axis, the W axis, and the T axis shown in the drawings indicate the length direction, the width direction, and the thickness direction of the capacitor body 110, respectively. Here, the thickness direction (T axis direction) may be a direction perpendicular to the wide surface (main surface) of the sheet-shaped component, and may be used as the same concept as the lamination direction in which the dielectric layers 111 are laminated, for example. The length direction (L axis direction) may be a direction extending parallel to the wide surface (main surface) of the sheet-shaped component and approximately perpendicular to the thickness direction (T axis direction), and may be a direction in which the first external electrode 131 and the second external electrode 132 are located on both sides, for example. The width direction (W axis direction) may be a direction extending parallel to the wide surface (main surface) of the sheet-shaped component and approximately perpendicular to the thickness direction (T axis direction) and the length direction (L axis direction), and the length of the length direction (L axis direction) of the sheet-shaped component may be longer than the length of the width direction (W axis direction).

[0039] 1 to 3, a multilayer capacitor 100 according to an embodiment may include a capacitor body 110, and a first external electrode 131 and a second external electrode 132 disposed on opposite ends of the capacitor body 110 in a longitudinal direction (L-axis direction).

[0040] According to one embodiment, the multilayer capacitor 100 includes a capacitor body 110 including a dielectric layer 111 and internal electrodes 121, 122, and external electrodes 131, 132 disposed on the outside of the capacitor body 110. The capacitor body 110 includes titanium (Ti) and indium (In), and the content of indium (In) per 100 moles of titanium (Ti) in the entire capacitor body 110 is 0.2 moles to 4 moles.

[0041] As an example, the capacitor body 110 may include titanium (Ti) and indium (In), for example, the dielectric layer 111 may include In as a minor component of the dielectric, and the internal electrodes 121, 122 may include a Ni-In alloy.

[0042] According to another embodiment, the multilayer capacitor 100 includes a capacitor body 110 including a dielectric layer 111 and internal electrodes 121, 122, and external electrodes 131, 132 disposed on the outside of the capacitor body 110. The multilayer capacitor 100 includes titanium (Ti) and indium (In), and the content of indium (In) per 100 moles of titanium (Ti) in the entire multilayer capacitor 100 is 0.2 moles to 4 moles.

[0043] For example, the sintered metal layers included in the external electrodes 131 and 132 may contain indium (In).

[0044] Indium (In) is an element that has a stronger tendency to oxidize than nickel (Ni). When In is added to a conductive paste for forming an internal electrode during the manufacture of the multilayer capacitor 100 and fired in a reducing atmosphere, most of the In is contained in the interfaces between the dielectric layer 111 and the internal electrodes 121 and 122.

[0045] By including In at the interface between the dielectric layer 111 and the internal electrodes 121, 122, the interfacial bonding strength between the dielectric layer 111 and the internal electrodes 121, 122 can be improved, and the indium can act as a semiconductor barrier that hinders the transfer of electrons from the internal electrodes 121, 122 to the dielectric layer 111 and from the dielectric layer 111 to the internal electrodes 121, 122.

[0046] In addition, the In contained in the interface on the dielectric layer 111 side is In 3+ It is oxidized as In and substituted at the Ti site of the barium titanate dielectric compound. 3+ When In is substituted at the Ti site of a dielectric compound, 3+ The ferroelectric material acts as an acceptor, thereby improving the reliability of the multilayer capacitor 100.

[0047] In addition, In contained in the interface on the side of the internal electrodes 121 and 122 forms an alloy with Ni, which is a metal contained in the internal electrodes 121 and 122, thereby improving the smoothness and connectivity of the internal electrodes 121 and 122.

[0048] If the In content per 100 moles of Ti in the entire capacitor body 110 is less than 0.2 moles, there will not be enough In at the interface between the dielectric layer 111 and the internal electrodes 121, 122, and the effect of improving the reliability of the multilayer capacitor 100 will be minimal. If it exceeds 4 moles, the vacancies of Ti sites will be eliminated in the dielectric compound, and the reliability of the multilayer capacitor 100 may actually deteriorate.

[0049] In addition, if the In content per 100 moles of Ti in the entire multilayer capacitor 100 is less than 0.2 moles, there will not be enough In at the interface between the dielectric layer 111 and the internal electrodes 121, 122, and the effect of improving the reliability of the multilayer capacitor 100 will be minimal. If it exceeds 4 moles, there will be no vacancies in the Ti sites in the dielectric compound, and the reliability of the multilayer capacitor 100 may actually deteriorate.

[0050] The content of In relative to Ti in the multilayer capacitor 100 is measured as follows.

[0051] First, a sample is prepared by removing the external electrodes 131 and 132 of the multilayer capacitor 100 by milling or polishing, or the multilayer capacitor 100 itself from which the external electrodes 131 and 132 are not removed is prepared as a sample.

[0052] Then, 0.1 g of the sample is weighed and placed in a pressure bottle, and 6 ml of hydrochloric acid and 2 ml of nitric acid are added to prepare a mixture. The mixture is then heat-treated at about 180°C for about 1 hour, and a dissolved sample is prepared through additional sonication. The dissolved sample is filtered through a 0.45 μm filter, and the Ti and In contents (moles) contained in the sample are analyzed using an Inductively Coupled Plasma-Optical Emission Spectrometry (ICP-OES).

[0053] The above analysis is performed on five or more stacked capacitors, and the arithmetic mean value of the measured values ​​is calculated to determine the In content relative to Ti.

[0054] Capacitor Body The capacitor body 110 may be, for example, generally hexahedral in shape.

[0055] For ease of explanation, in this embodiment, the two surfaces of the capacitor body 110 that face each other in the thickness direction (T-axis direction) are defined as the first surface and the second surface, the two surfaces connected to the first surface and the second surface and facing each other in the length direction (L-axis direction) are defined as the third surface and the fourth surface, and the two surfaces connected to the first surface and the second surface and connected to the third surface and the fourth surface and facing each other in the width direction (W-axis direction) are defined as the fifth surface and the sixth surface.

[0056] As an example, the first surface, which is the lower surface, may be the surface facing the mounting direction. Furthermore, the first to sixth surfaces may be flat, but the present embodiment is not limited to this. For example, the first to sixth surfaces may be curved surfaces with a convex center, and the corners that are the boundaries between the surfaces may be rounded.

[0057] The shape and size of the capacitor body 110 and the number of laminated dielectric layers 111 are not limited to those shown in the drawings of this embodiment.

[0058] The capacitor body 110 is formed by stacking a plurality of dielectric layers 111 in the thickness direction (T-axis direction) and then firing the same, and includes a plurality of dielectric layers 111 and first internal electrodes 121 and second internal electrodes 122 arranged alternately in the thickness direction (T-axis direction) between the dielectric layers 111.

[0059] At this time, the boundaries between the adjacent dielectric layers 111 of the capacitor body 110 may be integrated to such an extent that it is difficult to confirm the boundaries without using a scanning electron microscope (SEM).

[0060] The capacitor body 110 may also include an active area and a cover area 112 , 113 .

[0061] The active region is a portion that contributes to forming the capacitance of the multilayer capacitor 100. As an example, the active region may be a region where the first internal electrode 121 or the second internal electrode 122 that are stacked along the thickness direction (T-axis direction) overlap.

[0062] The cover regions 112 and 113 are thickness direction margins and may be disposed on the first and second sides of the active region in the thickness direction (T-axis direction), respectively. The cover regions 112 and 113 may be a single dielectric layer 111 or two or more dielectric layers 111 stacked on the upper and lower surfaces of the active region, respectively.

[0063] In addition, the capacitor body 110 may further include a side cover region. The side cover region is a widthwise marginal portion and may be disposed on the fifth and sixth sides of the active region in the widthwise direction (W-axis direction), respectively. Such a side cover region may be formed by applying a conductive paste layer for forming an internal electrode on only a part of the surface of the dielectric green sheet when applying a conductive paste layer on the surface of the dielectric green sheet, laminating dielectric green sheets on both sides of the surface of the dielectric green sheet without applying a conductive paste layer, and then firing the laminate.

[0064] The cover regions 112 and 113 and the side cover regions serve to prevent the first internal electrode 121 and the second internal electrode 122 from being damaged by physical or chemical stress.

[0065] Dielectric Layer The dielectric layer 111 includes a dielectric material, which may include a major component and a minor component.

[0066] The main component is a dielectric base material that has a high dielectric constant and contributes to the formation of the dielectric constant of the multilayer capacitor 100 .

[0067] As an example, the main component may be a barium titanate compound, for example, Ba m TiO 3 (0.995≦m≦1.010), (Ba 1-X Ca x ) m (Ti 1-y Zr y )O 3 (0.995≦m≦1.010, 0≦x≦0.10, 0 <y≦0.20)、Ba m (Ti 1-x Zr x )O 3 (0.995≦m≦1.010, x≦0.10), (Ba 1-X Ca x ) m (Ti 1-y Sn y )O 3It may also be a dielectric material containing (0.995 ≤ m ≤ 1.010, 0 ≤ x ≤ 0.10, 0 < y ≤ 0.20), or a combination thereof.

[0068] As an example, the main component is BaTiO 3 , Ba(Ti,Zr)O 3 , Ba(Ti,Sn)O 3 , (Ba,Ca)TiO 3 , (Ba,Ca)(Ti,Zr)O 3 , (Ba,Ca)(Ti,Sn)O 3 , (Ba,Sr)TiO 3 , (Ba,Sr)(Ti,Zr)O 3 , (Ba,Sr)(Ti,Sn)O 3 , or a combination thereof can be included.

[0069] As an example, the secondary component contains indium (In), and indium (In) is oxidized as In 3+ and substituted into the Ti site of the barium titanate-based dielectric compound.

[0070] Also, the secondary component can further contain dysprosium (Dy), vanadium (V), manganese (Mn), chromium (Cr), silicon (Si), aluminum (Al), magnesium (Mg), tin (Sn), antimony (Sb), germanium (Ge), gallium (Ga), barium (Ba), lanthanum (La), yttrium (Y), actinium (Ac), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), hafnium (Hf), or a combination thereof. The dielectric may further contain a ceramic additive, an organic solvent, a binder, a dispersant, or a combination thereof.

[0071] As an example, the dielectric may include a plurality of dielectric grains, and at least one of the plurality of dielectric grains may have a core-shell structure.

[0072] A dielectric crystal grain having a core-shell structure includes a dielectric core and a shell surrounding at least a part of the core within one dielectric crystal grain. As an example, indium (In) included in the secondary component may be included in the shell region.

[0073] The molar ratio of the minor component to the major component differs between the core and shell, for example, the molar ratio of the minor component to the major component can change drastically at the boundary between the core and shell. This makes it easy to distinguish the boundary between the core and shell, and can be confirmed through transmission electron microscope-energy dispersive X-ray analysis (TEM-EDX).

[0074] For example, the core may be free of minor components or may only have trace amounts of minor components. Therefore, the core is made of only a pure main component without impurities, and the pure main component generally has a higher dielectric constant than a main component doped with an impurity element. Thus, the core can play a role in maintaining the dielectric constant.

[0075] The shell contains more minor components than the core. 3 The minor component doped into the B site of the shell (structure) has the effect of increasing the band gap energy at which other rare earth elements and doping elements diffuse into the dielectric crystal grains. This allows it to act as a barrier that inhibits other rare earth elements and doping elements from diffusing into the dielectric crystal grains. The shell inhibits the growth of the dielectric crystal grains, which can contribute to the fine graining of the dielectric crystal grains. In addition, the minor component doped into the A site of the main component in the shell can improve reliability and dielectric constant.

[0076] As an example, the dielectric layer 111 may include a center portion of the dielectric layer 111 and an interface portion of the dielectric layer 111 located on the surface of the center portion of the dielectric layer 111 and in contact with the internal electrodes 121 and 122 .

[0077] The center of the dielectric layer 111 may refer to a midpoint between a point on one surface of one of the dielectric layers and a point on the other surface of the dielectric layer located at a shortest distance from the point in a cross section cut in the L-axis and T-axis directions from the center in the W-axis direction of the capacitor body 110. Also, it may refer not only to the midpoint but also to a region within ±30% in the T-axis direction from the midpoint.

[0078] The interface portion of the dielectric layer 111 is a region other than the center portion of the dielectric layer 111, and may refer to a point 2 nm away in the T-axis direction from the interface disposed between the dielectric layer 111 and the internal electrodes 121, 122 toward the center portion of the dielectric layer 111. In addition, it may refer not only to the point but also to a region within ±30% in the T-axis direction based on the point.

[0079] In one embodiment, when the content of In relative to 100 moles of Ti at the interface of the dielectric layer 111 is A (mol), and the content of In relative to 100 moles of Ti at the center of the dielectric layer 111 is B (mol), A>B may be satisfied. As an example, A and B may satisfy A≧1.5B or A≧2B.

[0080] In one embodiment, the content (A) of In relative to 100 moles of Ti at the interface of the dielectric layer 111 may be 1.0 mole to 1.5 moles, for example, 1.0 mole to 1.4 moles, or 1.2 moles to 1.4 moles.

[0081] In one embodiment, the content of In (B) relative to 100 moles of Ti at the center of the dielectric layer 111 may be 0.5 mole to 1.0 mole, for example, 0.5 mole to 0.8 mole, or 0.6 mole to 0.8 mole.

[0082] When the above numerical range is satisfied, sufficient In is contained at the interface between the dielectric layer and the internal electrode, thereby improving the interfacial bonding strength between the dielectric layer and the internal electrode and realizing a multilayer capacitor with improved reliability.

[0083] The In content (B) at the center of the dielectric layer 111 and the In content (A) at the interface of the dielectric layer 111 described above can be measured by the following method.

[0084] First, the multilayer capacitor 100 is immersed in an epoxy mixture and hardened, and then the L-axis and T-axis sides of the capacitor body 110 are polished to 1 / 2 the W-axis direction. After fixing, the capacitor body 110 is maintained in a vacuum atmosphere chamber, and a cross-sectional sample (hereinafter referred to as a "cross-sectional sample") is prepared by cutting the capacitor body 110 from the center in the W-axis direction in the L-axis and T-axis directions.

[0085] The cross-sectional sample is then observed under a transmission electron microscope (TEM) to prepare a transmission electron microscope image as shown in Figure 4.

[0086] Figure 4 shows TEM images of the center of the dielectric layer (labeled "BT"), the interface between the dielectric layer and the internal electrode (labeled "Ni-BT INTERFACE"), and the center of the internal electrode (labeled "Ni") in a cross-sectional sample of a multilayer capacitor, obtained by observing them with a transmission electron microscope (TEM). Figure 5 shows a TEM image of Figure 4 mapped with Ti, and Figure 6 shows a TEM image of Figure 4 mapped with In.

[0087] 4 to 6, five or more arbitrary dielectric layers 111 are selected in the TEM image of the cross-sectional sample, and five equally spaced points corresponding to the center of the dielectric layer 111 and the interface of the dielectric layer 111 are selected. A TEM (Transmission Electron Microscope)-EDS (Energy Disperse X-Ray Spectrometer) quantitative analysis is performed at the selected points. As shown in Figs. 5 and 6, the cross-sectional sample is mapped with Ti and In, and the Ti and In contents are measured, and the arithmetic average of the measured values ​​is calculated to obtain A and B values.

[0088] For example, the average thickness of the dielectric layer 111 may be 0.05 μm or more, 0.1 μm or more, or 0.2 μm or more, and may be 2.5 μm or less, 1.5 μm or less, or 0.5 μm or less. If the average thickness of the dielectric layer 111 is less than 0.05 μm, it may be difficult to confirm the improvement in reliability.

[0089] The average thickness of the dielectric layer 111 can be measured by the following method.

[0090] First, a cross-sectional sample is observed with a scanning electron microscope (SEM) to obtain a scanning electron microscope image.

[0091] In a scanning electron microscope (SEM) image of a cross-sectional sample, the center point of the dielectric layer 111 in the length direction (L axis direction) or width direction (W axis direction) is used as a reference point, and the thickness may be the arithmetic average value of the thickness of the dielectric layer 111 at 10 points spaced a predetermined distance from the reference point.

[0092] The interval between the 10 points can be adjusted according to the scale of a scanning electron microscope (SEM) image, and may be, for example, 1 μm to 100 μm, 1 μm to 50 μm, or 1 μm to 10 μm.

[0093] At this time, all 10 points must be located within the dielectric layer 111, and if all 10 points are not located within the dielectric layer 111, the position of the reference point can be changed or the spacing between the 10 points can be adjusted.

[0094] internal electrode The first internal electrode 121 and the second internal electrode 122 are electrodes having different polarities and are alternately arranged to face each other along the T-axis direction with the dielectric layer 111 in between, and one end is exposed through the third and fourth surfaces of the capacitor body 110, respectively.

[0095] The first internal electrode 121 and the second internal electrode 122 can be electrically insulated from each other by a dielectric layer 111 disposed therebetween.

[0096] Ends of the first internal electrode 121 and the second internal electrode 122 alternately exposed through the third and fourth surfaces of the capacitor body 110 may be electrically connected to the first external electrode 131 and the second external electrode 132, respectively.

[0097] In an embodiment, the first internal electrode 121 and the second internal electrode 122 may include a conductive metal and indium (In), or may include an alloy of a conductive metal and indium (In).

[0098] For example, the conductive metal may further include metals such as Ni, Cu, Ag, Pd, or Au, or alloys thereof, such as an Ag-Pd alloy. For example, when the conductive metal is Ni, the first internal electrode 121 and the second internal electrode 122 may include Ni and In, for example, an Ni-In alloy.

[0099] Furthermore, the first internal electrode 121 and the second internal electrode 122 may contain dielectric particles having the same composition as the ceramic material contained in the dielectric layer 111 .

[0100] The first internal electrode 121 and the second internal electrode 122 may be formed using a conductive paste containing a conductive metal. The conductive paste may be printed using a screen printing method or a gravure printing method.

[0101] For example, the internal electrodes 121 and 122 may include central portions of the internal electrodes 121 and 122 and interface portions of the internal electrodes 121 and 122 that are located on the surfaces of the central portions of the internal electrodes 121 and 122 and contact the dielectric layer 111 .

[0102] The center of the internal electrodes 121 and 122 may refer to a midpoint between a point on one surface of one of the internal electrodes and a point on the other surface of the internal electrodes located at a shortest distance from the point in a cross section cut in the L-axis and T-axis directions from the center in the W-axis direction of the capacitor body 110. Also, it may refer not only to the midpoint but also to a region within ±30% in the T-axis direction from the midpoint.

[0103] The interface of the internal electrodes 121, 122 is a region other than the center of the internal electrodes 121, 122, and may refer to a point 2 nm away in the T-axis direction from the interface between the dielectric layer 111 and the internal electrodes 121, 122 toward the center of the internal electrodes 121, 122. Also, it may refer not only to the point, but also to a region within ±30% in the T-axis direction based on the point.

[0104] In one embodiment, when the average content of In per 100 moles of Ni at the interface of the internal electrodes 121, 122 is C (mol), and the average content of In per 100 moles of Ni at the center of the internal electrodes 121, 122 is D (mol), C>D may be satisfied. For example, C and D may satisfy C≧1.5D, for example, C≧2D, or C≧3D.

[0105] In one embodiment, the average content of In (C) relative to 100 moles of Ni at the interface between the internal electrodes 121, 122 may be 0.5 mole to 1.0 mole, for example, 0.5 mole to 0.8 mole, or 0.6 mole to 0.8 mole.

[0106] In one embodiment, the average content of In (D) relative to 100 moles of Ni at the center of the internal electrodes 121, 122 may be 0.05 mole to 0.5 mole, for example, 0.05 mole to 0.3 mole, or 0.1 mole to 0.3 mole.

[0107] When the numerical range is satisfied, sufficient In is contained at the interface between the dielectric layer 111 and the internal electrodes 121, 122, thereby improving the interfacial bonding strength between the dielectric layer 111 and the internal electrodes 121, 122 while improving the smoothness and connectivity of the internal electrodes 121, 122.

[0108] The average In content (D) at the center of the internal electrodes 121 and 122 and the average In content (C) at the interface between the internal electrodes 121 and 122 can be measured by the following method.

[0109] Figure 4 shows TEM images obtained by observing the center of the dielectric layer (labeled "BT"), the interface between the dielectric layer and the internal electrode (labeled "Ni-BT INTERFACE"), and the center of the internal electrode (labeled "Ni") in a cross-sectional sample of a multilayer capacitor using a transmission electron microscope (TEM). Figure 6 shows a TEM image of Figure 4 mapped with In, and Figure 7 shows a TEM image of Figure 4 mapped with Ni.

[0110] Five or more arbitrary internal electrodes 121, 122 are selected in a TEM image of a cross-sectional sample as shown in FIG. 4, and five equally spaced points corresponding to the center of the internal electrodes 121, 122 and the interface with the dielectric layer 111 are selected.

[0111] TEM (Transmission Electron Microscope)-EDS (Energy Disperse X-Ray Spectrometer) quantitative analysis was performed at the selected points. As shown in Figures 6 and 7, the cross-sectional sample was mapped with Ni and In, and the Ni and In contents were measured, and the arithmetic mean values ​​of the measured values ​​were calculated to obtain A and B values.

[0112] For example, the average thickness of the first internal electrode 121 and the second internal electrode 122 may be 0.05 μm or more, 0.1 μm or more, 0.2 μm or more, or 0.25 μm or more, and may be 1 μm or less, 0.5 μm or less, 0.4 μm or less, or 0.3 μm or less.

[0113] The average thickness of the first internal electrode 121 or the second internal electrode 122 can be measured by the following method.

[0114] In a scanning electron microscope (SEM) image of a cross-sectional sample, the center point of the length direction (L-axis direction) or width direction (W-axis direction) of the first internal electrode 121 or the second internal electrode 122 is set as a reference point, and the average thickness of the first internal electrode 121 or the second internal electrode 122 at 10 points spaced a predetermined distance from the reference point is calculated to obtain the arithmetic average value of the thicknesses of the first internal electrode 121 or the second internal electrode 122.

[0115] The interval between the 10 points can be adjusted according to the scale of a scanning electron microscope (SEM) image, and may be, for example, 1 μm to 100 μm, 1 μm to 50 μm, or 1 μm to 10 μm.

[0116] In this case, all 10 points must be located within the first internal electrode 121 or the second internal electrode 122, and if all 10 points are not located within the first internal electrode 121 or the second internal electrode 122, the position of the reference point can be changed or the spacing between the 10 points can be adjusted.

[0117] external electrode The first external electrode 131 and the second external electrode 132 are provided with voltages of different polarities and are electrically connected to the exposed portions of the first internal electrode 121 and the second internal electrode 122, respectively.

[0118] With the above configuration, when a predetermined voltage is applied to the first external electrode 131 and the second external electrode 132, charges are stored between the opposing first internal electrode 121 and second internal electrode 122. At this time, the capacitance of the multilayer capacitor 100 is proportional to the overlap area of ​​the first internal electrode 121 and the second internal electrode 122 that overlap each other along the T-axis direction in the active region.

[0119] The first external electrode 131 and the second external electrode 132 may each include a first connection portion and a second connection portion arranged on the third and fourth surfaces of the capacitor body 110, respectively, and connected to the first internal electrode 121 and the second internal electrode 122, and a first band portion and a second band portion arranged at the corner where the third and fourth surfaces of the capacitor body 110 meet the first and second surfaces or the fifth and sixth surfaces.

[0120] The first and second band parts may extend from the first and second connecting parts to parts of the first and second surfaces or the fifth and sixth surfaces of the capacitor body 110. The first and second band parts may serve to improve the bonding strength between the first and second external electrodes 131 and 132.

[0121] As an example, the first external electrode 131 and the second external electrode 132 may each include a sintered metal layer in contact with the capacitor body 110, a conductive resin layer arranged to cover the sintered metal layer, and a plating layer arranged to cover the conductive resin layer.

[0122] The sintered metal layer may include a conductive metal and indium (In).

[0123] The sintered metal layer may include copper (Cu), nickel (Ni), silver (Ag), palladium (Pd), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), lead (Pb), alloys thereof, or combinations thereof, for example, copper (Cu) may include a copper (Cu) alloy. For example, when the conductive metal is Cu, the sintered metal layer may include Cu and In, for example, a Cu-In alloy. Also, when the conductive metal includes copper, metals other than copper may be included in an amount of 5 mol or less per 100 mol of copper.

[0124] As an example, the sintered metal layer may further include glass. In this case, the sintered metal layer may include a composition in which oxides are mixed as glass, and may be, for example, one or more selected from the group consisting of silicon oxide, boron oxide, aluminum oxide, transition metal oxide, alkali metal oxide, and alkaline earth metal oxide. The transition metal may be selected from the group consisting of zinc (Zn), titanium (Ti), copper (Cu), vanadium (V), manganese (Mn), iron (Fe), and nickel (Ni), the alkali metal may be selected from the group consisting of lithium (Li), sodium (Na), and potassium (K), and the alkaline earth metal may be one or more selected from the group consisting of magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba).

[0125] Alternatively, the conductive resin layer may be formed on the sintered metal layer, for example, to completely cover the sintered metal layer. Meanwhile, the first external electrode 131 and the second external electrode 132 may not include the sintered metal layer, in which case the conductive resin layer may be in direct contact with the capacitor body 110.

[0126] The conductive resin layer extends to the first and second surfaces or the fifth and sixth surfaces of the capacitor body 110, and the length of the region (i.e., band portion) where the conductive resin layer is extended to the first and second surfaces or the fifth and sixth surfaces of the capacitor body 110 may be longer than the length of the region (i.e., band portion) where the sintered metal layer is extended to the first and second surfaces or the fifth and sixth surfaces of the capacitor body 110. That is, the conductive resin layer is formed on the sintered metal layer to completely cover the sintered metal layer.

[0127] The conductive resin layer includes a resin and a conductive metal.

[0128] The resin contained in the conductive resin layer is not particularly limited as long as it has bonding and impact absorbing properties and can be mixed with the conductive metal powder to form a paste, and may include, for example, a phenolic resin, an acrylic resin, a silicone resin, an epoxy resin, or a polyimide resin.

[0129] The conductive metal contained in the conductive resin layer serves to electrically connect the first internal electrode 121 and the second internal electrode 122 or the sintered metal layer.

[0130] The conductive metal contained in the conductive resin layer may have a spherical shape, a flake shape, or a combination thereof, that is, the conductive metal may be only in a flake shape, only in a spherical shape, or in a mixed shape of a flake shape and a spherical shape.

[0131] Here, the spherical shape may include a shape that is not a perfect sphere, for example, a shape in which the ratio of the major axis to the minor axis (major axis / minor axis) is 1.45 or less. The flake-shaped powder means a powder having a flat and elongated shape, and is not particularly limited, and may be, for example, a ratio of the major axis to the minor axis (major axis / minor axis) of 1.95 or more.

[0132] The first external electrode 131 and the second external electrode 132 may further include a plating layer disposed on the outer side of the conductive resin layer.

[0133] The plating layer may include nickel (Ni), copper (Cu), tin (Sn), palladium (Pd), platinum (Pt), gold (Au), silver (Ag), tungsten (W), titanium (Ti), lead (Pb), etc., alone or in alloys thereof. For example, the plating layer may be a nickel (Ni) plating layer or a tin (Sn) plating layer, or may be a form in which a nickel (Ni) plating layer and a tin (Sn) plating layer are sequentially laminated, or a form in which a tin (Sn) plating layer, a nickel (Ni) plating layer, and a tin (Sn) plating layer are sequentially laminated. The plating layer may also include a plurality of nickel (Ni) plating layers and / or a plurality of tin (Sn) plating layers.

[0134] The plating layer can improve the mountability of the multilayer capacitor 100 on a substrate, structural reliability, durability against the outside, heat resistance, and equivalent series resistance (ESR).

[0135] Manufacturing method of stacked capacitor A method for manufacturing a multilayer capacitor according to another embodiment includes forming a capacitor body including a dielectric layer and an internal electrode, and forming an external electrode on the outside of the capacitor body.

[0136] First, the manufacture of the capacitor body will be described.

[0137] In the manufacturing process of the capacitor body, a dielectric paste that will become the dielectric layer after firing and a conductive paste that will become the internal electrode after firing are prepared.

[0138] The dielectric paste is produced, for example, by the following method: Dielectric powder is mixed uniformly by means of wet mixing or the like, dried, and then heat-treated under predetermined conditions to obtain a plastic powder. An organic vehicle or an aqueous vehicle is added to the obtained plastic powder and kneaded to prepare a dielectric paste.

[0139] The obtained dielectric paste is formed into a sheet by a technique such as a doctor blade method to obtain a dielectric green sheet. The dielectric paste may contain additives selected from various dispersants, plasticizers, dielectrics, subcomponent compounds, glass, etc., as necessary.

[0140] The conductive paste for the internal electrodes is prepared by kneading a conductive powder made of a conductive metal or an alloy thereof with a binder and a solvent.

[0141] For example, the conductive paste for the internal electrodes may be prepared by containing indium (In).

[0142] The conductive paste for the internal electrodes may contain ceramic powder (e.g., barium titanate powder) as a co-material, if necessary, which can suppress sintering of the conductive powder during the firing process.

[0143] A conductive paste for internal electrodes is applied in a predetermined pattern to the surface of the dielectric green sheet by various printing methods such as screen printing or transfer methods. Then, the dielectric green sheets on which the internal electrode patterns are formed are laminated in multiple layers, and then pressed in the lamination direction to obtain a dielectric green sheet laminate. At this time, the dielectric green sheets and the internal electrode patterns can be laminated so that the dielectric green sheets are located on the upper and lower surfaces of the dielectric green sheet laminate in the lamination direction.

[0144] Optionally, the obtained dielectric green sheet laminate can be cut to a predetermined size by dicing or the like.

[0145] Furthermore, the dielectric green sheet laminate can be solidified and dried to remove plasticizers, etc., if necessary, and after solidification and drying, can be barrel polished using a horizontal centrifugal barrel polishing machine or the like. In barrel polishing, the dielectric green sheet laminate can be placed in a barrel container together with media and polishing liquid, and the barrel container can be given a rotational motion, vibration, etc., to polish unnecessary parts such as burrs generated during cutting. After barrel polishing, the dielectric green sheet laminate can be washed with a cleaning liquid such as water and dried.

[0146] The dielectric green sheet laminate is subjected to a binder removal process and a firing process to obtain a capacitor body.

[0147] The conditions of the binder removal treatment can be appropriately adjusted depending on the main component composition of the dielectric layer and the main component composition of the internal electrode. For example, the temperature increase rate during the binder removal treatment may be 5°C / hour to 300°C / hour, the support temperature may be 180°C to 400°C, and the temperature maintenance time may be 0.5 hours to 24 hours. The binder removal atmosphere may be air or a reducing atmosphere.

[0148] The firing conditions can be appropriately adjusted depending on the main component composition of the dielectric layer and the main component composition of the internal electrodes. For example, the firing temperature may be 1200°C to 1350°C, or 1220°C to 1300°C, and the firing time may be 0.5 hours to 8 hours, or 1 hour to 3 hours. The firing atmosphere may be a reducing atmosphere, for example, nitrogen gas (N 2 ) and hydrogen gas (H 2 If the internal electrodes contain nickel (Ni) or nickel (Ni) alloy, the oxygen partial pressure in the firing atmosphere is 1.0×10 -14 MPa~1.0×10 -10 It may be MPa.

[0149] After the firing treatment, annealing can be performed if necessary. Annealing is a treatment for reoxidizing the dielectric layer, and when the firing treatment is performed in a reducing atmosphere, annealing can be performed. The conditions of the annealing treatment can also be appropriately adjusted depending on the main component composition of the dielectric layer. For example, the temperature during annealing may be 950°C to 1150°C, the time may be 0 hours to 20 hours, and the temperature increase rate may be 50°C / hour to 500°C / hour. The annealing atmosphere may be humidified nitrogen gas (N 2 ) atmosphere, with an oxygen partial pressure of 1.0×10 -9 MPa~1.0×10 -5 It may be MPa.

[0150] In the binder removal treatment, firing treatment, or annealing treatment, a wetter, for example, may be used to wet the nitrogen gas or mixed gas, and in this case, the water temperature may be 5° C. to 75° C. The binder removal treatment, firing treatment, and annealing treatment may be performed consecutively or independently.

[0151] Optionally, the third and fourth faces of the obtained capacitor body may be subjected to a surface treatment such as sandblasting, laser irradiation, barrel polishing, etc. By performing such a surface treatment, the ends of the first and second internal electrodes are exposed on the outermost surfaces of the third and fourth faces, which may improve the electrical connection between the first and second external electrodes and the first and second internal electrodes, making it easier to form an alloy part.

[0152] Thereafter, a paste for forming a sintered metal layer is applied to the outer surface of the obtained capacitor body as an external electrode, and then sintered to form a sintered metal layer.

[0153] The paste for forming the sintered metal layer may include a conductive metal and glass. The conductive metal and glass are the same as those described above, and therefore will not be described again. The paste for forming the sintered metal layer may optionally include a subcomponent such as a binder, a solvent, a dispersant, a plasticizer, or an oxide powder. For example, the binder may be ethyl cellulose, acrylic, or butyral, and the solvent may be an organic solvent such as terpineol, butyl carbitol, alcohol, methyl ethyl ketone, acetone, or toluene, or an aqueous solvent.

[0154] The method of applying the paste for forming the sintered metal layer to the outer surface of the capacitor body can be a dipping method, various printing methods such as screen printing, an application method using a dispenser, a spraying method using a spray, etc. The paste for the sintered metal layer is applied to at least the third and fourth surfaces of the capacitor body, and can also be selectively applied to a part of the first, second, fifth, or sixth surface on which the band portions of the first and second external electrodes are formed.

[0155] Thereafter, the capacitor body on which the paste for forming a sintered metal layer has been applied is dried and sintered at a temperature of 700° C. to 1000° C. for 0.1 to 3 hours to form a sintered metal layer.

[0156] Alternatively, a conductive resin layer forming paste may be applied to the outer surface of the obtained capacitor body and then cured to form a conductive resin layer.

[0157] The paste for forming the conductive resin layer may include a resin, and optionally a conductive metal or a non-conductive filler. The conductive metal and the resin are the same as those described above, and therefore will not be described again. The paste for forming the conductive resin layer may optionally include a subcomponent such as a binder, a solvent, a dispersant, a plasticizer, or an oxide powder. For example, the binder may be ethyl cellulose, acrylic, or butyral, and the solvent may be an organic solvent such as terpineol, butyl carbitol, alcohol, methyl ethyl ketone, acetone, or toluene, or an aqueous solvent.

[0158] As an example, the conductive resin layer may be formed by dipping the capacitor body 110 into a paste for forming the conductive resin layer and then curing it, or by printing the paste for forming the conductive resin layer on the surface of the capacitor body 110 using a screen printing method or a gravure printing method, or by applying the paste for forming the conductive resin layer on the surface of the capacitor body 110 and then curing it.

[0159] Next, a plating layer is formed on the outside of the conductive resin layer.

[0160] For example, the plating layer may be formed by a plating method, such as sputtering or electrolytic deposition.

[0161] Specific examples of the present invention are presented below. However, the examples described below are merely for the purpose of specifically illustrating or explaining the present invention, and should not be construed as limiting the scope of the present invention.

[0162] (Example) Example 1 The multilayer capacitor according to Example 1 was manufactured by weighing out In and adjusting the oxygen partial pressure conditions so that the In content in the multilayer capacitor was 0.21 mol per 100 mol of Ti.

[0163] The In content in the multilayer capacitor can be determined as follows.

[0164] First, the stacked capacitor according to Example 1 is prepared as a sample, and 0.1 g of the sample is weighed and placed in a pressure bottle, to prepare a mixture of 6 ml of hydrochloric acid and 2 ml of nitric acid. The mixture is then heat-treated at about 180° C. for about 1 hour, and a dissolved sample is prepared through additional sonication. The dissolved sample is filtered through a 0.45 μm filter, and the Ti and In contents (moles) contained in the sample are analyzed using an inductively coupled plasma spectrometry (ICP-OES). The above analysis is performed on five or more stacked capacitors, and the arithmetic mean value of the measured values ​​is calculated to obtain the average In content relative to Ti.

[0165] In addition, for the multilayer capacitor according to Example 1, the average In content (A) at the interface of the dielectric layer and the average In content (B) at the center of the dielectric layer were measured and are shown in the following Table 1. In addition, for the multilayer capacitor according to Example 1, the average In content (C) at the interface of the internal electrode and the average In content (D) at the center of the dielectric layer were measured and are shown in the following Table 2.

[0166] Specifically, the stacked capacitor according to Example 1 is immersed in an epoxy mixture and hardened, and then the L-axis and T-axis sides of the capacitor body are polished to 1 / 2 the W-axis direction, and after fixing, maintained in a vacuum atmosphere chamber, a cross-sectional sample is prepared by cutting the capacitor body 110 from the center in the W-axis direction in the L-axis and T-axis directions.

[0167] Then, after preparing a TEM image of the cross-sectional sample, five or more arbitrary dielectric layers and arbitrary internal electrodes are selected from the image, five equally spaced points corresponding to the center and interface of the dielectric layer are selected, and five equally spaced points corresponding to the center and interface of the internal electrodes are selected.

[0168] The Ti and In contents are measured at selected points through TEM (Transmission Electron Microscope)-EDS (Energy Disperse X-Ray Spectrometer) quantitative analysis, and the A, B, C, and D values ​​can be obtained by calculating the arithmetic mean of the measured values.

[0169] [Table 1]

[0170] [Table 2]

[0171] Examples 2 to 7 and Comparative Examples 1 to 5 The multilayer capacitors according to Examples 2 to 7 and Comparative Examples 1 to 5 were manufactured by weighing out In and adjusting the oxygen partial pressure conditions so that the In content in the multilayer capacitors falls within the moles shown in Table 3 below.

[0172] (Evaluation example) Evaluation example 1: MTTF (Mean Time To Failure) measurement The multilayer capacitors manufactured in Examples 1 to 7 and Comparative Examples 1 to 5 are subjected to a high temperature load test under conditions of 125° C. and 8 V to measure the MTTF (Mean Time To Failure) value.

[0173] At this time, the time until the insulation resistance becomes 10 kΩ or less was set as a fixed time, and the MTTF value of Comparative Example 1 was set as a reference value 1, and the relative values ​​of the other Examples and Comparative Examples were measured and shown in Table 3 below.

[0174] Evaluation example 2: Capacitance The capacitance of each of the multilayer capacitors manufactured in Examples 1 to 7 and Comparative Examples 1 to 5 is measured under conditions of 1 kHz and AC 0.5V using an LCR meter.

[0175] The capacitance of Comparative Example 1 was set to a reference value of 1, and the relative values ​​of the other Examples and Comparative Examples were measured and shown in Table 3 below.

[0176] [Table 3]

[0177] Referring to Table 3, it can be seen that the multilayer capacitors according to Examples 1 to 7 are superior in both MTTF and capacitance compared to Comparative Example 1 which does not contain In in the multilayer capacitor.

[0178] Also, in the case of Comparative Examples 2 to 4 in which the In content in the multilayer capacitor is low, it can be seen that the capacitance value of the capacitor is lower than that of Comparative Example 1 or is at a similar level.

[0179] Also, in the case of Comparative Example 5, in which the In content in the multilayer capacitor is excessively high, it can be seen that the MTTF and capacitance of the capacitor are both lower than those of Comparative Example 1.

[0180] Although a preferred embodiment of the present invention has been described above, the present invention is not limited thereto, and can be embodied in various modified forms within the scope of the claims, the detailed description of the invention, and the attached drawings, which of course also fall within the scope of the present invention. [Explanation of symbols]

[0181] 100: Multilayer capacitor 110: Capacitor body 111: Dielectric layer 112, 113: Coverage area 121: 1st internal electrode 122:Second internal electrode 131: 1st external electrode 132:Second external electrode

Claims

1. a capacitor body including a dielectric layer and an internal electrode; and an external electrode disposed on an outside of the capacitor body; the capacitor body comprises titanium (Ti) and indium (In); The content of the indium (In) is 0.2 moles or more and 4 moles or less per 100 moles of the titanium (Ti) in the entire capacitor body.

2. 2. The multilayer capacitor according to claim 1, wherein the dielectric layer contains a barium titanate compound as a main component and indium (In) as a subcomponent.

3. The multilayer capacitor according to claim 1 , wherein the internal electrodes comprise a conductive metal and indium (In).

4. the dielectric layer includes a central portion of the dielectric layer and an interface portion of the dielectric layer located on a surface of the central portion of the dielectric layer and in contact with the internal electrode, 2. The multilayer capacitor according to claim 1, wherein, when an In content per 100 moles of Ti at an interface portion of the dielectric layer is A (mol), and an In content per 100 moles of Ti at a center portion of the dielectric layer is B (mol), A>B is satisfied.

5. The multilayer capacitor according to claim 4 , wherein the multilayer capacitor satisfies A≧2B.

6. 5. The multilayer capacitor according to claim 4, wherein A is equal to or greater than 1.0 mol and equal to or less than 1.5 mol.

7. 5. The multilayer capacitor according to claim 4, wherein the B is 0.5 moles or more and 1.0 moles or less.

8. the internal electrode includes a central portion of the internal electrode and an interface portion of the internal electrode located on a surface of the central portion of the internal electrode and in contact with the dielectric layer; 2. The multilayer capacitor according to claim 1, wherein, when an In content per 100 moles of Ni at an interface portion of the internal electrode is C (moles) and an In content per 100 moles of Ni at a center portion of the internal electrode is D (moles), C>D is satisfied.

9. The stacked capacitor according to claim 8 , wherein the stacked capacitor satisfies C≧3D.

10. 9. The multilayer capacitor according to claim 8, wherein the C is 0.5 mol or more and 1.0 mol or less.

11. 9. The multilayer capacitor according to claim 8, wherein D is 0.05 mol or more and 0.5 mol or less.

12. A multilayer capacitor including a dielectric layer, a capacitor body including an internal electrode, and an external electrode disposed on an outer side of the capacitor body, The stacked capacitor includes titanium (Ti) and indium (In), The content of the indium (In) per 100 moles of the titanium (Ti) in the entire multilayer capacitor is 0.2 moles or more and 4 moles or less.

13. the external electrode includes a sintered metal layer in contact with the capacitor body; The stacked capacitor of claim 12 , wherein the sintered metal layer comprises a conductive metal and indium (In).

14. the dielectric layer includes a central portion of the dielectric layer and an interface portion of the dielectric layer located on a surface of the central portion of the dielectric layer and in contact with the internal electrode, 13. The multilayer capacitor according to claim 12, wherein A>B is satisfied, where A is an In content per 100 moles of Ti at an interface portion of the dielectric layer, and B is an In content per 100 moles of Ti at a center portion of the dielectric layer.

15. The stacked capacitor according to claim 14, wherein the stacked capacitor satisfies A≧2B.

16. 15. The multilayer capacitor according to claim 14, wherein A is 1.0 mole or more and 1.5 moles or less.

17. 15. The multilayer capacitor according to claim 14, wherein B is 0.5 mol or more and 1.0 mol or less.

18. the internal electrode includes a central portion of the internal electrode and an interface portion of the internal electrode located on a surface of the central portion of the internal electrode and in contact with the dielectric layer; 13. The multilayer capacitor according to claim 12, wherein, when an In content per 100 moles of Ni at an interface portion of the internal electrode is C (moles) and an In content per 100 moles of Ni at a center portion of the internal electrode is D (moles), C>D is satisfied.

19. 20. The stacked capacitor of claim 18, wherein the stacked capacitor satisfies C≧3D.

20. 20. The multilayer capacitor according to claim 18, wherein the C is 0.5 mol or more and 1.0 mol or less.

21. 20. The multilayer capacitor according to claim 18, wherein D is 0.05 mol or more and 0.5 mol or less.

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