Film deposition device and film deposition method

Abstract

To provide a technique capable of eliminating static electricity of a film deposition face of a substrate, before a mask is in contact with the substrate by adjusting a relative position between the mask and the substrate.SOLUTION: A film deposition device has alignment means for adjusting a relative position between a substrate and a mask based on measurement results of alignment marks respectively formed on the substrate and the mask, and adjustment means for adjusting the relative position between the substrate and the mask based on the measurement results, and deposits a film of a vapor deposition substance on a film deposition face of the substrate adsorbed by the electrostatic chuck via the mask. The film deposition device comprises a static elimination device for eliminating static electricity of the film deposition face of the substrate by adjusting the position of the adjustment means before the substrate approaches to the mask.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a film formation apparatus and a film formation method for forming a film on a substrate. [Background technology]

[0002] Patent Document 1 discloses a film formation apparatus including an electrostatic chuck for adsorbing a substrate, a mechanism for aligning the substrate adsorbed to the electrostatic chuck with a mask placed on a mask table, and an adjustment mechanism for adjusting the relative inclination between the electrostatic chuck and the mask table. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-57673 A Summary of the Invention [Problem to be solved by the invention]

[0004] When the deposition surface of the substrate is charged, if a mask is brought close to the substrate for alignment, the mask may be pulled up due to the charge on the deposition surface, causing contact with the deposition surface of the substrate. Since accurate alignment cannot be performed when the deposition surface is charged, the number of alignment operations increases, the alignment position does not converge, or other problems occur.

[0005] In order to enable a smooth alignment operation, it is preferable to remove electricity from the film-forming surface of the substrate before the mask and the substrate are brought closer to each other by adjusting the relative positions of the mask and the substrate.

[0006] In consideration of the above-mentioned problems, the present invention provides a technology that makes it possible to de-electrify the film formation surface of a substrate before the mask and substrate approach each other by adjusting the relative positions of the mask and substrate. [Means for solving the problem]

[0007] A film formation apparatus according to one aspect of the present invention includes an adjustment unit that adjusts relative positions of a substrate and a mask based on measurement results of alignment marks formed on the substrate and the mask, respectively, and forms a film of a deposition material through the mask on a film formation surface of the substrate attracted to an electrostatic chuck, The apparatus further includes a charge removing means for removing electricity from the deposition surface of the substrate before the substrate and the mask approach each other by adjusting the position of the adjustment means. Effect of the Invention

[0008] According to the present invention, the relative positions of the mask and the substrate are adjusted so that the static electricity on the film-forming surface of the substrate can be removed before the mask and the substrate approach each other. [Brief description of the drawings]

[0009] [Figure 1] Schematic diagram of a part of a manufacturing line for electronic devices. [Diagram 2] 1 is a schematic diagram of a film forming apparatus according to an embodiment. [Diagram 3] FIG. 2 is a diagram showing a first example of the configuration of a static eliminator in the film forming apparatus according to the embodiment. [Figure 4] FIG. 4 is a diagram showing a second configuration example of a static eliminator in the film forming apparatus according to the embodiment. [Diagram 5] FIG. 4 is a diagram showing a third configuration example of a static eliminator in a film forming apparatus according to an embodiment. [Figure 6] FIG. 11 is a diagram showing a fourth configuration example of a static eliminator in the film forming apparatus according to the embodiment. [Figure 7] FIG. 5 is a diagram showing a fifth example of the configuration of a static eliminator in a film forming apparatus according to an embodiment. [Figure 8] FIG. 6 is a diagram showing a sixth configuration example of a static eliminator in a film forming apparatus according to an embodiment. [Figure 9] FIG. 7 is a diagram showing a seventh configuration example of a static eliminator in a film forming apparatus according to an embodiment. [Figure 10] FIG. 8 is a diagram showing an eighth configuration example of a static eliminator in a film forming apparatus according to an embodiment. [Figure 11]FIG. 2 is a diagram showing an overall process flow by a film forming apparatus according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described in detail with reference to the attached drawings. Note that the following embodiments do not limit the invention according to the claims. Although the embodiments describe a number of features, not all of these features are essential to the invention, and the features may be combined in any manner. Furthermore, in the attached drawings, the same reference numbers are used for the same or similar configurations, and duplicated descriptions are omitted.

[0011] <Electronic device manufacturing line> Fig. 1 is a schematic diagram showing a part of the configuration of a manufacturing line for electronic devices to which the film forming apparatus of the present invention can be applied. The manufacturing line in Fig. 1 is used, for example, for manufacturing a display panel for an organic EL display device, in which substrates 100 are sequentially transported to a film forming block 301, and an organic EL element is formed on the substrate 100. In Fig. 1, arrow Z indicates the vertical direction (gravity direction), and arrows X and Y indicate horizontal directions perpendicular to each other. Also, in each figure, G indicates ground.

[0012] In the film formation block 301, a plurality of film formation chambers 303a to 303d in which film formation processing is performed on the substrate 100 and a mask storage chamber 305 in which masks before and after use are stored are arranged around a transfer chamber 302 having an octagonal shape in a plan view. A transfer robot 302a for transferring the substrate 100 is arranged in the transfer chamber 302. The transfer robot 302a includes a hand for holding the substrate 100 and an articulated arm capable of moving the hand in the horizontal and vertical directions. In other words, the film formation block 301 is a cluster-type film formation unit in which a plurality of film formation chambers 303a to 303d are arranged so as to surround the transfer robot 302a. When the film formation chambers 303a to 303d are collectively referred to or when they are not distinguished from one another, they are referred to as film formation chambers 303.

[0013] In the transport direction (arrow direction) of the substrate 100, a buffer chamber 306, a swirl chamber 307, and a delivery chamber 308 are disposed on the upstream side and downstream side of the film-forming block 301, respectively. In the manufacturing process, each chamber is maintained in a vacuum state. Although only one film-forming block 301 is illustrated in FIG. 1, the manufacturing line according to this embodiment has a plurality of film-forming blocks 301, and the plurality of film-forming blocks 301 are connected by a connection device composed of the buffer chamber 306, the swirl chamber 307, and the delivery chamber 308. The configuration of the connection device is not limited to this, and may be composed of, for example, only the buffer chamber 306 or the delivery chamber 308.

[0014] The transport robot 302a transports the substrate 100 from the upstream delivery chamber 308 to the transport chamber 302, transports the substrate 100 between the film formation chambers 303, transports the mask between the mask storage chamber 305 and the film formation chamber 303, and transports the substrate 100 from the transport chamber 302 to the downstream buffer chamber 306.

[0015] The buffer chamber 306 is a chamber for temporarily storing the substrates 100 depending on the operating status of the production line. The buffer chamber 306 is provided with a substrate storage shelf, also called a cassette, and a lifting mechanism. The substrate storage shelf has a multi-stage structure capable of storing a plurality of substrates 100 while maintaining the substrates 100 in a horizontal state with the surfaces to be processed (film-forming surfaces) facing downward in the direction of gravity. The lifting mechanism raises and lowers the substrate storage shelf to match the stage where the substrates 100 are carried in or out with the transport position. This allows the buffer chamber 306 to temporarily store and retain a plurality of substrates 100.

[0016] The swirl chamber 307 is equipped with a device for changing the orientation of the substrate 100. In this embodiment, the swirl chamber 307 rotates the orientation of the substrate 100 by 180 degrees using a transport robot 307a provided in the swirl chamber 307. The transport robot 307a includes a hand for holding the substrate 100 and an articulated arm capable of moving the hand in horizontal and vertical directions. The transport robot 307a provided in the swirl chamber 307 rotates 180 degrees while supporting the substrate 100 received in the buffer chamber 306 and delivers it to the delivery chamber 308, whereby the front end and the rear end of the substrate are swapped between the buffer chamber 306 and the delivery chamber 308. As a result, the orientation of the substrate 100 when it is carried into the film formation chamber 303 is the same in each film formation block 301, so that the scanning direction of the evaporation source and the orientation of the mask with respect to the substrate 100 can be made consistent in each film formation block 301. With this configuration, the orientation of the masks placed in the mask storage chambers 305 in each deposition block 301 can be aligned, simplifying mask management and improving usability.

[0017] The control system of the manufacturing line includes a higher-level device 300 that controls the entire line as a host computer, and control devices 14a-14d, 309, and 310 that control each component, and these can communicate with each other via a wired or wireless communication line 300a. The control devices 14a-14d are provided corresponding to the film formation chambers 303a-303d, and control the film formation apparatus 1 described below. When the control devices 14a-14d are collectively referred to or when there is no need to distinguish between them, they are referred to as the control device 14.

[0018] The control device 14 controls the entire film forming apparatus 1. The control device 14 includes a processing unit 1, a storage unit, an input / output interface (I / O), and a communication unit. The processing unit is a processor represented by a CPU, and executes a program stored in the storage unit to control the film forming apparatus 1. The storage unit is a storage device such as a ROM, a RAM, or a HDD, and stores various control information in addition to the program executed by the processing unit. The I / O is an interface that transmits and receives signals between the processing unit and each component of the film forming apparatus 1. The communication unit is a communication device that communicates with the upper device 300 or other control devices 14, 309, 310, etc. via a communication line, and the processing unit receives information from the upper device 300 or transmits information to the upper device 300 via the communication unit. Note that all or a part of the control device 14 or the upper device 300 may be configured with a PLC, an ASIC, or an FPGA.

[0019] The control device 309 controls the transport robot 302a. The control device 310 controls the device in the swirl chamber 307 and the transport robot 307a. The host device 300 transmits information about the substrate 100 and instructions such as transport timing to each of the control devices 14, 309, and 310, and each of the control devices 14, 309, and 310 controls each component based on the received instructions.

[0020] <Overview of the deposition equipment> FIG. 2 is a schematic diagram of a film forming apparatus 1 according to an embodiment. The film forming apparatus 1 provided in the film forming chamber 303 is an apparatus for forming a film of a deposition material on a substrate 100, and forms a thin film of the deposition material in a predetermined pattern through a mask 101. The material of the substrate 100 on which a film is formed in the film forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal, and a resin layer such as polyimide formed on glass is preferably used. The deposition material is an organic material, an inorganic material (metal, metal oxide, etc.), and the like. The film forming apparatus 1 can be applied to a manufacturing apparatus for manufacturing electronic devices such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film imaging elements), and optical members, and is particularly applicable to a manufacturing apparatus for manufacturing organic EL panels. In the following description, an example will be described in which the film forming apparatus 1 forms a film on the substrate 100 by vacuum deposition, but the present embodiment is not limited thereto, and can be applied to various film forming methods such as sputtering and CVD.

[0021] The film forming apparatus 1 has a box-shaped vacuum chamber 3 (also simply called a chamber) capable of maintaining a vacuum inside. An internal space 3a of the vacuum chamber 3 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen gas. In this embodiment, the vacuum chamber 3 is connected to a vacuum pump (not shown). In this specification, "vacuum" refers to a state filled with gas at a pressure lower than atmospheric pressure, in other words, a reduced pressure state. In the internal space 3a of the vacuum chamber 3, a substrate support unit 6 that supports the substrate 100 in a horizontal position, a mask table 5 that supports a mask 101, a film forming unit 4, a plate unit 9, and an electrostatic chuck 15 are arranged. The mask 101 is a metal mask having an opening pattern corresponding to a thin film pattern to be formed on the substrate 100, and is placed on the mask table 5. The mask table 5 can be replaced with another form of means for fixing the mask 101 at a predetermined position. For example, a mask having a mask foil with a thickness of 10 μm or more and 100 μm or less and provided on a frame-shaped mask frame can be used as the mask 101. The material of the mask 101 is not particularly limited, but may be a metal with a small thermal expansion coefficient, such as Invar. The film formation process is performed in a state where the substrate 100 is placed on the mask 101 and the substrate 100 and the mask 101 are superimposed on each other.

[0022] The plate unit 9 includes a cooling plate 10 and a magnet plate 11. The cooling plate 10 is suspended below the magnet plate 11 so as to be displaceable in the Z direction relative to the magnet plate 11. The cooling plate 10 has a function of cooling the substrate 100 attracted to the electrostatic chuck 15 during film formation by contacting the electrostatic chuck 15 described later. The cooling plate 10 is not limited to a cooling plate having a water cooling mechanism or the like to actively cool the substrate 100, and may be a plate-like member that does not have a water cooling mechanism or the like but removes heat from the substrate 100 by contacting the electrostatic chuck 15. The magnet plate 11 is a plate that attracts the mask 101 by magnetic force, and is placed on the upper surface of the substrate 100 to improve the adhesion between the substrate 100 and the mask 101 during film formation.

[0023] The cooling plate 10 and the magnetic plate 11 may be omitted as appropriate. For example, when the electrostatic chuck 15 is provided with a cooling mechanism, the cooling plate 10 may not be necessary. In addition, when the electrostatic chuck 15 attracts the mask 101, the magnetic plate 11 may be omitted.

[0024] The film forming unit 4 is composed of a heater, a shutter, an evaporation source driving mechanism, an evaporation rate monitor, etc., and is an evaporation source that deposits an evaporation material onto the substrate 100. More specifically, in this embodiment, the film forming unit 4 is a linear evaporation source in which a plurality of nozzles (not shown) are arranged in the X direction, and an evaporation material is discharged from each nozzle. For example, the linear evaporation source is moved back and forth in the Y direction (depth direction of the device) by an evaporation source moving mechanism (not shown). In this embodiment, the film forming unit 4 is provided in the vacuum chamber 3 in which an alignment process to be described later is performed. However, in an embodiment in which a film forming process is performed in a chamber other than the vacuum chamber 3 in which alignment is performed, the film forming unit 4 is not provided in the vacuum chamber 3.

[0025] The substrate supporting unit 6 supports the peripheral portion of the substrate 100. The substrate supporting unit 6 includes a plurality of base portions 61 and a plurality of substrate supporting portions 62 protruding inward from the plurality of base portions 61. The substrate supporting portions 62 may also be called "receiving claws" or "substrate supporting claws." The base portions 61 are each supported by a support shaft R3. The substrate 100 carried into the film forming apparatus 1 by the transfer robot 302a is supported by the plurality of substrate supporting portions 62.

[0026] In this embodiment, the multiple substrate support parts 62 are composed of leaf springs, and when the substrate 100 supported by the multiple substrate support parts 62 is attracted to the electrostatic chuck 15, the elastic force of the leaf springs can press the peripheral edge of the substrate 100 against the electrostatic chuck 15.

[0027] The electrostatic chuck 15 attracts the substrate 100. In this embodiment, the electrostatic chuck 15 is provided between the substrate supporting unit 6 and the plate unit 9, and is supported by one or more supporting shafts R1. In one embodiment, the supporting shaft R1 is a cylindrical shaft.

[0028] The electrostatic chuck 15 has a structure in which an electric circuit such as a metal electrode is embedded inside a matrix (also called a base) made of a ceramic material, for example. The surface of the electrostatic chuck 15 may be polyimide (resin) or may be anodized. In this embodiment, the electrostatic chuck 15 has a plurality of electrode portions. The electrode portions include an electrode to which a positive (+) voltage is applied and an electrode to which a negative (-) voltage is applied. When a voltage is applied to each electrode, a polarization charge is induced in the substrate 100 through the ceramic matrix, and the electrostatic attraction (electrostatic force) between the substrate 100 and the electrostatic chuck 15 attracts and fixes the film formation surface 100a of the substrate 100 to the attraction surface 150 of the electrostatic chuck 15.

[0029] In addition, the electrostatic chuck 15 has a plurality of openings formed therein, and the measurement units (first measurement unit 7 and second measurement unit 8) described later capture images of alignment marks described later through the plurality of openings to obtain information regarding the relative positional relationship between the substrate 100 and the mask 101.

[0030] The position adjustment unit 20 adjusts the relative position of the substrate 100, the peripheral portion of which is supported by the substrate support unit 6, or the substrate 100, the peripheral portion of which is attracted by the electrostatic chuck 15, and the mask 101. The position adjustment unit 20 adjusts the relative position of the substrate 100 with respect to the mask 101 by displacing the substrate support unit 6 or the electrostatic chuck 15 on the XY plane. That is, the position adjustment unit 20 can be said to be a unit that adjusts the horizontal positional relationship between the mask 101 and the substrate 100. For example, the position adjustment unit 20 can displace the substrate support unit 6 in the X and Y directions and rotate it around an axis in the Z direction. In this embodiment, the position of the mask 101 is fixed and the substrate 100 is displaced to adjust their relative positions, but the mask 101 may be displaced to adjust the position, or both the substrate 100 and the mask 101 may be displaced. For example, the position adjustment unit 20 may displace the substrate support unit 6 by a known configuration such as a motor as a driving source and a ball screw mechanism that converts the driving force of the motor into linear motion.

[0031] The distance adjustment unit 22 adjusts the distance between the electrostatic chuck 15 and the substrate support unit 6 and the mask table 5 by raising and lowering them, and moves the substrate 100 and the mask 101 closer to each other and farther apart in the thickness direction (Z direction) of the substrate 100. In this embodiment, the distance adjustment unit 22 includes a first lift plate 220 that supports the electrostatic chuck 15 via a plurality of support shafts R1 and supports the substrate support unit 6 via a plurality of support shafts R3. The distance adjustment unit 22 raises and lowers the first lift plate 220 to raise and lower the electrostatic chuck 15 and the substrate support unit 6. That is, the distance adjustment unit 22 brings the substrate 100 and the mask 101 closer to each other in the overlapping direction and moves them apart in the opposite direction. The "distance" adjusted by the distance adjustment unit 22 is the so-called vertical distance (or perpendicular distance), and the distance adjustment unit can also be said to be a unit that adjusts the vertical positions of the mask 101 and the substrate 100. For example, the position adjustment unit 20 may displace the first lift plate 220 by a known configuration such as a motor as a drive source and a ball screw mechanism that converts the drive force of the motor into linear motion. The distance adjustment unit 22 also includes an actuator 65 that moves the substrate support unit 6 relative to the first lift plate 220, thereby changing the relative position of the substrate support unit 6 with respect to the electrostatic chuck 15. The measurement units (first measurement unit 7 and second measurement unit 8), the position adjustment unit 20, and the distance adjustment unit 22 function as an adjustment mechanism (7, 8, 20, 22) and adjust the relative positions of the substrate 100 and the mask 101 based on the measurement results of alignment marks formed on the substrate 100 and the mask 101, respectively.

[0032] In the present embodiment, the distance adjustment unit 22 fixes the position of the mask table 5 and moves the substrate supporting unit 6 and the electrostatic chuck 15 to adjust the distance therebetween in the Z direction, but is not limited to this. The positions of the substrate supporting unit 6 or the electrostatic chuck 15 may be fixed and the mask table 5 may be moved to adjust the distance therebetween, or each of the substrate supporting unit 6, the electrostatic chuck 15, and the mask table 5 may be moved to adjust the distance therebetween.

[0033] The plate unit lifting unit 13 lifts and lowers the second lift plate 12 arranged outside the vacuum chamber 3, thereby lifting and lowering the plate unit 9 connected to the second lift plate 12 and arranged inside the vacuum chamber 3. The plate unit 9 is connected to the second lift plate 12 via one or more support shafts R2. In this embodiment, the plate unit 9 is supported by two support shafts R2. The support shafts R2 extend upward from the magnet plate 11 and are connected to the second lift plate 12 through the openings of the upper wall portion 30, the openings of the fixed plate 20a and the movable plate 20b, and the opening of the first lift plate 220. For example, the position adjustment unit 20 may displace the second lift plate 12 using a known configuration such as a motor as a driving source and a ball screw mechanism that converts the driving force of the motor into linear motion.

[0034] The openings in the upper wall 30 of the vacuum chamber 3 through which the support shafts R1 to R3 pass have a size that allows the support shafts R1 to R3 to be displaced in the X and Y directions. To maintain the airtightness of the vacuum chamber 3, bellows or the like are provided in the openings in the upper wall 30 through which the support shafts R1 to R3 pass.

[0035] The measurement units (first measurement unit 7 and second measurement unit 8) measure the positional deviation between the substrate 100, the peripheral portion of which is supported by the substrate supporting unit 6, and the mask 101. In this embodiment, the first measurement unit 7 and the second measurement unit 8 are both imaging devices (cameras) that capture images. The first measurement unit 7 and the second measurement unit 8 are disposed above the upper wall portion 30, and are capable of capturing images of the inside of the vacuum chamber 3 through a window portion (not shown) formed in the upper wall portion 30.

[0036] In this embodiment, alignment marks used for alignment are formed on the substrate 100 and the mask 101. More specifically, the substrate 100 and the mask 101 are each provided with rough alignment marks for performing rough position adjustment and fine alignment marks for performing more accurate position adjustment.

[0037] The first measurement unit 7 is a low-magnification CCD camera (rough camera) having a relatively wide field of view but low resolution, and measures a rough positional deviation between the substrate 100 and the mask 101. For example, two first measurement units 7 are provided so as to capture images, via the opening 152, of rough alignment marks provided near the centers of the short sides of the substrate 100 and the mask 101.

[0038] The second measurement unit 8 is a high-magnification CCD camera (fine camera) having a relatively narrow field of view but high resolution (for example, on the order of several μm), and measures with high precision the positional deviation between the substrate 100 and the mask 101. For example, four second measurement units 8 are provided so as to capture images of fine alignment marks provided at the four corners of the substrate 100 and the mask 101 through the openings 152.

[0039] In this embodiment, after rough positional adjustment between the substrate 100 and the mask 101 is performed based on the measurement results of the first measurement unit 7, precise positional adjustment between the substrate 100 and the mask 101 is performed based on the measurement results of the second measurement unit 8.

[0040] The film forming apparatus 1 of this embodiment has a deposition-up type configuration (a configuration in which the film forming surface of the substrate 100 faces vertically downward during film formation, and the film forming surface 100a of the substrate 100 faces vertically upward). In the deposition-up type film forming apparatus 1, the back surface (facing vertically upward) of the film forming surface 100a of the substrate 100 is an adsorption surface that is adsorbed to the electrostatic chuck 15, in other words, a contact surface where the electrostatic chuck 15 and the substrate 100 come into contact with each other. In the film forming apparatus 1, the vertically upper surface of the substrate 100 is the film forming surface 100a, and the vertically lower surface of the substrate 100 is the film forming surface, and the film forming apparatus 1 forms a thin film of a deposition material having a predetermined pattern on the film forming surface of the substrate through a mask 101.

[0041] An adjustment mechanism (7, 8, 20, 22) of the film forming apparatus 1 adjusts the relative positions of the substrate 100 and the mask 101 based on the measurement results of alignment marks formed on the substrate 100 and the mask 101, respectively, and the film forming apparatus 1 forms a film of an evaporation material through the mask 101 on the film forming surface 100a of the substrate 100 attracted to the electrostatic chuck 15.

[0042] The static elimination device of the film formation apparatus 1 of this embodiment eliminates static electricity from the film formation surface 100a of the substrate 100 before the substrate 100 and the mask 101 approach each other by adjusting the position of the adjustment mechanism (7, 8, 20, 22).

[0043] As a state before the substrate 100 and the mask 101 approach each other, the static eliminator of the film forming apparatus 1 eliminates static electricity from the film forming surface 100a of the substrate 100 before the substrate 100 is attracted to the electrostatic chuck 15. Alternatively, as a state before the substrate 100 and the mask 101 approach each other, the static eliminator of the film forming apparatus 1 eliminates static electricity from the film forming surface 100a of the substrate 100 after the substrate 100 is attracted to the electrostatic chuck 15.

[0044] In this embodiment, the path before the substrate 100 comes into contact with the electrostatic chuck 15 is referred to as the substrate transport path before film formation (hereinafter, also simply referred to as the transport path). For example, the path before the substrate 100 is attracted to the electrostatic chuck 15 of the film formation apparatus 1 in the film formation chamber 303 where the first film formation process is performed is the substrate transport path before film formation, and the charge removal at a position on the substrate transport path is the charge removal before the substrate 100 and the mask 101 approach each other.

[0045] In the configuration of FIG. 1, for example, a path from a substrate storage shelf provided in the buffer chamber 306 to a path before the substrate 100 is attracted to the electrostatic chuck 15 of the film formation apparatus 1 in the film formation chamber 303 is a substrate transport path before film formation, and the charge removal at a position on the substrate transport path is a charge removal before the substrate 100 and the mask 101 approach each other. The substrate transport path before film formation may be a path before the substrate 100 is attracted to the electrostatic chuck 15, and is not limited to the configuration shown in the example of FIG. 1, and may start from a stocker that stores the substrate 100 further upstream than the buffer chamber 306. In this embodiment, the device configuration in the substrate transport path before film formation and each film formation block 301 including the film formation apparatus 1 may be collectively referred to as a film formation system or a film formation apparatus.

[0046] <Configuration example 1 of the static eliminator: Example of providing the static eliminator in the transfer chamber 302> FIG. 3 is a diagram showing a configuration example 1 of a static eliminator in a film forming apparatus 1 according to an embodiment. As the configuration example 1 of the static eliminator, a configuration using a static eliminator (ionizer) 350 that can be used in a vacuum environment will be described. FIG. 3 shows an example of a substrate transport path before film formation (a state before the substrate 100 and the mask 101 approach each other) in which a static eliminator (ionizer) 350 is provided in a transport chamber 302. Specifically, an example of providing a static eliminator (ionizer) 350 at a position before (near) a gate valve 361 between the film forming chamber 303 and the transport chamber 302 is shown. The static elimination at a position on the substrate transport path is static elimination before the substrate 100 and the mask 101 approach each other.

[0047] The static eliminator (ionizer) 350 is a device that outputs ultraviolet light that induces ionization, and may be, for example, a device that employs an ion generation method using vacuum ultraviolet light (photoionization). The static eliminator (ionizer) 350 can be connected to a vacuum chamber (for example, the transfer chamber 2 in the configuration example 1 of FIG. 3) via a vacuum flange 352. Here, the vacuum flange 352 is a vacuum component that has a sealing function and can connect the vacuum chamber and the static eliminator (ionizer) 350.

[0048] The static eliminator (ionizer) 350 has a vacuum ultraviolet light generation section 351 (light source unit) and an irradiation section 353 that irradiates the vacuum ultraviolet light generated by the vacuum ultraviolet light generation section 351, and the vacuum ultraviolet light 354 is irradiated from the irradiation section 353.

[0049] 3 shows an example in which the charge removal devices (ionizers) 350 are provided on both the upper and lower sides of the transfer chamber 302, but in the case of removing charge from the film formation surface 100a of the substrate 100 in the deposition-up type film formation apparatus 1, it is sufficient to provide the charge removal device (ionizer) 350 at least on the lower side of the transfer chamber 302. The transfer robot 302a can adjust the irradiation range of the vacuum ultraviolet light 354 by controlling the position in the Z direction (vertical direction) and adjusting the distance between the irradiation unit 353 and the film formation surface 100a.

[0050] The transfer robot 302a moves in the X direction (horizontal direction) to transfer the substrate 100 to the film formation chamber 303, whereby the film formation surface 100a of the substrate 100 is irradiated with vacuum ultraviolet light 354 on the substrate transfer path before film formation (before the substrate 100 and the mask 101 approach each other), and the potential (static electricity) charged on the substrate 100 can be removed. The removal of electricity at this position is also the removal of electricity before the substrate 100 and the mask 101 approach each other. In order to remove electricity from a wider irradiation range simultaneously on the substrate transfer path before film formation (before the substrate 100 and the mask 101 approach each other), a plurality of charge removal devices (ionizers) 350 may be provided in the Y direction (perpendicular to the paper surface).

[0051] <Configuration Example 2 of Static Charge Eliminator: Example of Providing Static Charge Eliminator in Buffer Chamber 306> The position where the charge removal device (ionizer) 350 is provided is not limited to the transfer chamber 302, and the vacuum ultraviolet light 354 may be irradiated onto the substrate 100 stored in a stocker for storing the substrate 100 or a substrate storage shelf provided in the buffer chamber 306. In this embodiment, the path before the substrate 100 is attracted to the electrostatic chuck 15 is the substrate transfer path before a film is formed, so the buffer chamber 306 and a stocker for storing the substrate 100 further upstream than the buffer chamber 306 are also included in the substrate transfer path before a film is formed. Charge removal at a position on the substrate transfer path is charge removal before the substrate 100 and the mask 101 approach each other.

[0052] Fig. 4 is a diagram showing a second configuration example of a static eliminator in the film forming apparatus 1 according to the embodiment. As the second configuration example of the static eliminator, Fig. 4 shows an example of a substrate transport path before film formation (a state before the substrate 100 and the mask 101 approach each other), in which a static eliminator (ionizer) 350 is provided in the buffer chamber 306. The substrates 100 stored in the substrate storage shelf of the buffer chamber 306 are stored in a horizontal state with the surface to be processed (film formation surface) facing downward in the direction of gravity (vertically downward), so that the film formation surface 100a of the substrate 100 is on the vertically downward side in Fig. 4.

[0053] In the configuration shown in Figure 4, an example is shown in which a static elimination device (ionizer) 350 is provided on both the upper and lower sides of the transport chamber 302. In a deposit-up type film forming apparatus 1, when static elimination is performed on the film forming surface 100a of the substrate 100, it is sufficient to provide a static elimination device (ionizer) 350 at least on the lower side of the buffer chamber 306.

[0054] 4, in order to irradiate the substrate 100 with the vacuum ultraviolet light 354 over a wide area while the substrate 100 is stored, a plurality of static eliminators (ionizers) 350 are provided in the X direction (horizontal direction), but providing a plurality of static eliminators 350 is not essential. For example, when a single static eliminator (ionizer) 350 can eliminate static electricity from an area of ​​the film formation surface 100a of the substrate 100 that requires static elimination, at least one static eliminator (ionizer) 350 may be provided below the buffer chamber 306.

[0055] <Configuration Example 3 of Static Charge Eliminator: Example of Providing Static Charge Eliminator in Swirling Chamber 307> In this embodiment, the path before the substrate 100 comes into contact with the electrostatic chuck 15 is the substrate transport path before film formation, and therefore, for example, the swirl chamber 307 and the delivery chamber 308 in Fig. 1 are also included in the substrate transport path before film formation. In other words, the charge removal at a position on the substrate transport path is the charge removal before the substrate 100 and the mask 101 approach each other.

[0056] 5 is a diagram showing a configuration example 3 of a static eliminator in the film forming apparatus 1 according to the embodiment. As the configuration example 3 of the static eliminator, FIG. 5 shows an example of a static eliminator (ionizer) 350 provided in a swirl chamber 307 as an example of a substrate transport path before film formation (a state before the substrate 100 and the mask 101 approach each other). A transport robot 307a in the swirl chamber 307 moves in the X direction (horizontal direction) to transport the substrate 100 to a delivery chamber 308, whereby a film formation surface 100a of the substrate 100 is irradiated with vacuum ultraviolet light 354 on the substrate transport path before film formation (a state before the substrate 100 and the mask 101 approach each other), and the electric potential (static electricity) charged on the substrate 100 can be eliminated. In order to simultaneously remove static electricity from a wider irradiation range on the substrate transport path before film formation (before the substrate 100 and the mask 101 approach each other), a plurality of static eliminators (ionizers) 350 may be provided in the Y direction (perpendicular to the paper surface). The location where the static eliminators (ionizers) 350 are provided is not limited to the swirl chamber 307 shown in FIG. 5, and may be the delivery chamber 308.

[0057] 5 shows an example in which the static eliminator (ionizer) 350 is provided on both the upper and lower sides of the swirl chamber 307, as in the case of Fig. 3, but in the case of removing static electricity from the film formation surface 100a of the substrate 100 in the deposition-up type film formation apparatus 1, it is sufficient to provide the static eliminator (ionizer) 350 at least on the lower side of the swirl chamber 307. The transfer robot 307a can adjust the irradiation range of the vacuum ultraviolet light 354 by controlling the position in the Z direction (vertical direction) and adjusting the distance between the irradiation unit 353 and the film formation surface 100a.

[0058] <Configuration Example 4 of Static Charge Eliminator: Example of Providing Static Charge Eliminator on Side Wall of Film Forming Apparatus 1> 6 is a diagram showing a fourth configuration example of a static eliminator in the film forming apparatus 1 according to the embodiment. In FIG. 6, a static eliminator (ionizer) 350 is provided on the side wall of the film forming apparatus 1.

[0059] The substrate 100 is supported by substrate support parts 62 (substrate support claws) that support the peripheral edge of the substrate 100. In this state, the substrate 100 is not attracted to the electrostatic chuck 15. The substrate 100 is also not in contact with the mask 101. In this state, a charge removal device (ionizer) 350 is provided on a side wall of the film forming apparatus 1 so as to irradiate the substrate 100 supported by the substrate support parts 62 with vacuum ultraviolet light 354 from the horizontal direction (X direction).

[0060] As shown in configuration example 4, when the substrate 100 is placed on the substrate support portion 62 and before it is attracted to the electrostatic chuck 15, the charge is removed before the substrate 100 and the mask 101 come close to each other.

[0061] <Configuration Example 5 of Static Charge Eliminator: Example of Providing Static Charge Eliminator on Side Wall of Film Forming Apparatus 1> 7 is a diagram showing a configuration example 5 of a static eliminator in the film forming apparatus 1 according to the embodiment. In FIG. 7, a static eliminator (ionizer) 350 is provided on the side wall of the film forming apparatus 1.

[0062] In the configuration example 5, a charge removal device (ionizer) 350 is provided on a side wall of the film forming apparatus 1 so as to irradiate the substrate 100 with vacuum ultraviolet light 354 after the substrate 100 is attracted to the electrostatic chuck 15. The configuration example 5 differs from the configuration example 4 (FIG. 6) in that the target to be irradiated with the vacuum ultraviolet light 354 is not the substrate 100 (film formation surface 100a) before being attracted to the electrostatic chuck 15, but the substrate 100 (film formation surface 100a) after being attracted to the electrostatic chuck 15. In the configuration example 5, an example will be described in which the charge removal device of the film forming apparatus 1 removes charge from the film formation surface 100a of the substrate 100 in a state after the substrate 100 is attracted to the electrostatic chuck 15, which is a state before the substrate 100 and the mask 101 approach each other.

[0063] The distance adjustment unit 22 raises and lowers the first lift plate 220, thereby raising and lowering the electrostatic chuck 15 and the substrate 100 attracted to the electrostatic chuck 15, and adjusts the position in the vertical direction (Z direction) to a position where the substrate 100 is within the irradiation range of the charge removal device (ionizer) 350. The position may be adjusted so that the film formation surface 100a of the substrate 100 can be decharged. After the alignment is completed, the charge removal device (ionizer) 350 irradiates the electrostatic chuck 15 with vacuum ultraviolet light 354.

[0064] 6 and 7 show examples in which a static eliminator (ionizer) 350 is provided on the side wall of the film forming apparatus 1. When the irradiation range of one static eliminator (ionizer) 350 provided on each of the left and right sides can cover both of the configuration examples 4 and 5, one static eliminator (ionizer) 350 may be provided on each of the left and right sides of the side wall of the film forming apparatus 1.

[0065] 7 shows an example in which the static eliminator (ionizer) 350 common to the static eliminator 4 (FIG. 6) is used, but the present invention is not limited to this example, and a plurality of static eliminators (ionizers) 350 may be provided on the side walls on the left and right sides. That is, on the left and right sides, a static eliminator (ionizer) 350 (first static eliminator) that irradiates the substrate 100 (film formation surface 100a) with vacuum ultraviolet light 354 before it is attracted to the electrostatic chuck 15, and a static eliminator (ionizer) 350 (second static eliminator) that irradiates the substrate 100 (film formation surface 100a) with vacuum ultraviolet light 354 after it is attracted to the electrostatic chuck 15 may be provided.

[0066] As shown in configuration example 5, after the substrate 100 is attracted to the electrostatic chuck 15, static electricity is removed before the substrate 100 and the mask 101 approach each other, as in configuration example 4 (FIG. 6).

[0067] As shown in configuration examples 1 to 5, the charge on the film formation surface 100a of the substrate 100 can be removed by irradiating the substrate 100 (film formation surface 100a) with vacuum ultraviolet light 354 using a static eliminator (ionizer) 350.

[0068] <Configuration Example 6 of Static Electricity Removal Device: Example using Static Electricity Dissipative Material: Substrate Support> In the configuration examples 1 to 5, the configurations using the static eliminator (ionizer) 350 have been described, but the configuration of the static eliminator is not limited to these examples. For example, a substance having static electricity diffusion properties may be used. A substance having static electricity diffusion properties is a substance that has the property of diffusing an electrified charge (static electricity diffusion property). Here, having "static electricity diffusion properties" means that the surface resistance value (Rs) measured based on the provisions of IEC International Electrotechnical Commission 61340-5-1 and 5-2 is 1×10 4 Ω or more, 1×10 11 A material has a surface resistance value of less than Ω. This range of surface resistance values ​​(Rs) is also called the static electricity dissipative region. Hereinafter, a material having static electricity dissipative properties is also called a static electricity dissipative material.

[0069] As the substance having static electricity diffusion properties, for example, resin (for example, thermosetting resin) or ceramics in the static electricity diffusion region can be used. The static electricity diffusion substance can be molded into various shapes of parts so as to easily come into contact with the member to be de-electrified (the film-forming surface 100a of the substrate 100).

[0070] In the sixth configuration example, the static eliminator of the film forming apparatus 1 eliminates static electricity from the film forming surface 100a of the substrate 100 in a state after the substrate 100 is attracted to the electrostatic chuck 15, which is a state before the substrate 100 and the mask 101 approach each other. In the sixth configuration example, the static eliminator is configured such that the substrate support 62, which contacts the peripheral edge of the film forming surface 100a of the substrate 100, is made of a static electricity dissipative material. FIG. 8 is a diagram showing the sixth configuration example of the static eliminator in the film forming apparatus 1 according to the embodiment. In FIG. 8, the substrate support 62, the base 61, and the actuator 65, which are made of a static electricity dissipative material, are referred to as a static eliminator.

[0071] 8 shows a film forming apparatus 1 to which configuration example 6 is applied, and the basic configuration of the apparatus is the same as that of the film forming apparatus 1 described in FIG. 2, but differs in that the substrate support 62 is formed of a static electricity dissipative material as a configuration of a static electricity removal device. The base 61, the substrate support 62, and the actuator 65 are provided as at least a pair of left and right configurations. Note that the base 61, the substrate support 62, and the actuator 65 may be further provided in the direction perpendicular to the paper surface so as to surround the peripheral portion of the substrate 100.

[0072] As a part formed from a substance having electrostatic dissipation properties, the substrate support part 62 comes into contact with the film formation surface 100a of the substrate 100 when supporting the peripheral edge of the substrate 100. When the substrate 100 is carried into the vacuum chamber 3 of the film formation apparatus 1 and placed on the substrate support part 62, the peripheral edge of the film formation surface 100a of the substrate 100 comes into contact with the substrate support part 62 formed from an electrostatic dissipation substance, and is thereby de-electrified. As shown in the configuration example 6, when the substrate 100 is placed on the substrate support part 62 and before it is attracted to the electrostatic chuck 15, the de-electrification is also performed before the substrate 100 and the mask 101 come close to each other.

[0073] <Configuration example 7 of static eliminator: Example using static electricity dissipative material: Projection shape> In the seventh configuration example, an example will be described in which the static eliminator of the film forming apparatus 1 eliminates static electricity from the film forming surface 100a of the substrate 100 in a state after the substrate 100 is attracted to the electrostatic chuck 15, which is a state before the substrate 100 and the mask 101 approach each other. Fig. 9 is a diagram showing the seventh configuration example of the static eliminator in the film forming apparatus 1 according to the embodiment. As the seventh configuration example of the static eliminator, an example of a protruding (pin-shaped) part formed from a static electricity diffusive material 504 is shown.

[0074] In the seventh configuration example, a protruding (pin-shaped) part formed by the static electricity dissipative material 504 comes into contact with the film formation surface 100a of the substrate 100 attracted to the electrostatic chuck 15. The static electricity removal hand 503 holding the protruding (pin-shaped) part formed by the static electricity dissipative material 504 is placed on the transfer robot 302a, and is transferred from the transfer chamber 302 to the film formation chamber 303 (vacuum chamber) by the transfer robot 302a. The static electricity removal hand 503 transferred into the film formation chamber 303 (vacuum chamber) is then raised vertically upward by the transfer robot 302a, and the protruding (pin-shaped) part comes into contact with the film formation surface 100a of the substrate 100.

[0075] A protruding (pin-shaped) part formed of the static electricity dissipative material 504 comes into contact with the film-forming surface 100a of the substrate 100, thereby removing the electric potential of the film-forming surface 100a of the substrate 100. As shown in the configuration example 7, the removal of electric charge after the substrate 100 is attracted to the electrostatic chuck 15 is also performed before the substrate 100 and the mask 101 approach each other. In the configuration example 7, the electric charge removal hand 503 is stored, for example, in the mask storage chamber 305, and the transfer robot 302a takes out the electric charge removal hand 503 from the mask storage chamber 305 at the timing of performing the electric charge removal process, and performs the electric charge removal process. The position where the electric charge removal hand 503 is stored is not limited to the mask storage chamber 305, and a space for storing the electric charge removal hand 503 may be provided separately.

[0076] <Example 8 of the static eliminator configuration: Example using static electricity dissipative material: Sheet type> In the configuration example 8, an example will be described in which the static eliminator of the film forming apparatus 1 eliminates static electricity from the film forming surface 100a of the substrate 100 in a state after the substrate 100 is attracted to the electrostatic chuck 15, which is a state before the substrate 100 and the mask 101 approach each other. Fig. 10 is a diagram showing the configuration example 8 of the static eliminator in the film forming apparatus 1 according to the embodiment. As the configuration example 8 of the static eliminator, an example of a sheet-shaped (plate-shaped) part having a two-dimensional spread formed from a static electricity diffusive material 504 is shown.

[0077] In configuration example 8, a sheet-shaped part formed from the static electricity dissipative material 504 comes into contact with the film formation surface 100a of the substrate 100 attracted to the electrostatic chuck 15. A static electricity removal hand 503 holding the sheet-shaped part via a sheet holding member 505 is placed on the transfer robot 302a, and is transferred from the transfer chamber 302 to the film formation chamber 303 (vacuum chamber) by the transfer robot 302a. The static electricity removal hand 503 transferred into the film formation chamber 303 (vacuum chamber) is then raised vertically upward by the transfer robot 302a, and the sheet-shaped part formed from the static electricity dissipative material 504 comes into contact with the film formation surface 100a of the substrate 100.

[0078] A sheet-shaped part formed of the static electricity dissipative material 504 comes into contact with the film-forming surface 100a of the substrate 100, thereby removing the electric potential of the film-forming surface 100a of the substrate 100. As shown in the configuration example 8, the removal of electric charge after the substrate 100 is attracted to the electrostatic chuck 15 is also performed before the substrate 100 and the mask 101 approach each other. In the configuration example 8, the static elimination hand 503 is stored, for example, in the mask storage chamber 305, and the transfer robot 302a takes out the static elimination hand 503 from the mask storage chamber 305 at the timing of performing the static elimination process, and performs the static elimination process. The position where the static elimination hand 503 is stored is not limited to the mask storage chamber 305, and a space for storing the static elimination hand 503 may be provided separately.

[0079] <Overall process flow by the film forming apparatus 1> 11, ST1 and ST2 are a flowchart showing the overall process flow by the film formation apparatus 1. This flowchart shows an overview of the steps that the film formation apparatus 1 executes on one substrate 100.

[0080] In ST1 and ST2, S201 is a pretreatment process in which a static elimination process is performed by a static eliminator as a pretreatment process for the film forming process.

[0081] The pretreatment step (S201) of ST1 is a pretreatment (discharge treatment) performed before the adsorption step (S202). In this case, the discharge treatment may be performed in any one of configuration examples 1 to 4 and configuration example 6.

[0082] When the static elimination process is performed not only in the pretreatment process (S201) of ST1 but also in any of Configuration Examples 5, 7, and 8, it is sufficient to perform the static elimination process in the pretreatment process (S201) after the adsorption process (S202) according to the flowchart of ST2 in any of Configuration Examples 5, 7, and 8. In either of the flowcharts of ST1 and ST2, according to the film formation apparatus 1 of this embodiment, the film formation surface 100a of the substrate 100 can be neutralized by adjusting the positions of the adjustment mechanisms (7, 8, 20, 22) before the substrate 100 and the mask 101 approach each other.

[0083] S202 is an adsorption step. For example, the control device 14 raises the substrate support unit 6 supporting the substrate 100 to a predetermined position. The control device 14 applies a changed voltage to the electrode portion of the electrostatic chuck 15 to generate an adsorption force, and causes the electrostatic chuck 15 to adsorb the substrate 100.

[0084] S203 is an alignment step. The control device 14 lowers the electrostatic chuck 15, which attracts the substrate 100, by the distance adjustment unit 22, so that the substrate 100 approaches the mask 101. Then, the position adjustment unit 20 adjusts the horizontal positions of the substrate 100 and the mask 101.

[0085] S204 is a film forming step. In preparation for this step, the control device 14 brings the substrate 100 and the mask 101 into contact with each other after alignment. Next, the control device 14 lowers the plate unit 9 to bring the substrate 100 and the mask 101 into closer contact with each other by the magnetic force of the magnet plate 11. In this state, the control device 14 causes the film forming unit 4 to deposit the deposition material onto the substrate 100.

[0086] S205 is a peeling process. The control device 14 peels off the substrate 100 from the electrostatic chuck 15 by stopping the application of voltage to the electrode portion of the electrostatic chuck 15. Note that the control device 14 may reduce the voltage applied to the electrode portion to such an extent that the electrostatic chuck 15 cannot maintain the adsorption of the substrate 100 without stopping the application of voltage to the electrode portion.

[0087] S206 is a carrying-out step in which the substrate 100 is carried out of the film forming apparatus by the transfer robot 302a.

[0088] According to this embodiment, the film formation surface of the substrate can be destaticized before the mask and the substrate approach each other by adjusting the relative positions of the mask and the substrate. Note that, in the film formation apparatus 1 of this embodiment, a configuration using the electrostatic chuck 15 has been described, but the present invention is not limited to this example, and the disclosed technology can solve the same problems and achieve the same effects even in a film formation apparatus that does not use the electrostatic chuck 15.

[0089] <Other embodiments> The present invention can also be realized by a process in which a program for implementing one or more of the functions of the above-described embodiments is supplied to a system or device via a network or a storage medium, and one or more processors in a computer of the system or device read and execute the program. The present invention can also be realized by a circuit (e.g., ASIC) that implements one or more of the functions.

[0090] The invention is not limited to the above-described embodiments, and various modifications and variations are possible without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0091] 1: film forming device, 14: control device, 15: electrostatic chuck, 8: alignment unit, 10: deposition unit (film forming source), 62: substrate support (substrate support claws), 100: substrate, 100a: film forming surface (substrate), 101: mask, 150: adsorption surface (electrostatic chuck), 302a: transport robot, 307a: transport robot, 350: static electricity removal device (ionizer), 501: static electricity removal device (static electricity removal robot), 504: static electricity dissipative material

Claims

1. A film formation apparatus comprising an adjustment unit that adjusts relative positions of a substrate and a mask based on measurement results of alignment marks formed on the substrate and the mask, and which forms a film of a deposition material through the mask on a film formation surface of the substrate attracted to an electrostatic chuck, the apparatus comprising: a charge removing means for removing electricity from the deposition surface of the substrate before the substrate and the mask approach each other by adjusting the position of the adjusting means; A film forming apparatus comprising:

2. 2. The film forming apparatus according to claim 1, wherein the charge removing means removes charge from the film forming surface of the substrate before the substrate and the mask approach each other and before the substrate is attracted to the electrostatic chuck.

3. 2. The film forming apparatus according to claim 1, wherein the charge removing means removes charge from the film forming surface of the substrate before the substrate and the mask approach each other and after the substrate is attracted to the electrostatic chuck.

4. 4. The film forming apparatus according to claim 1, wherein the charge removing means includes an ionizer that irradiates the film forming surface of the substrate with ultraviolet light that induces ionization.

5. The charge removing means is 1×10 ４ Ω or more, 1×10 １１ 4. The film forming apparatus according to claim 1, wherein a part molded from a substance having electrostatic dissipation properties and a surface resistance of less than Ω is brought into contact with the film forming surface to neutralize the film forming surface.

6. The film forming apparatus according to claim 5, characterized in that the de-electrification means brings a part having a plurality of protrusions or a part having a sheet shape with a two-dimensional extension, which is formed from the material having electrostatic diffusion properties, into contact with the film forming surface to de-electrify the film forming surface.

7. The film forming apparatus according to claim 5, characterized in that the static electricity removal means is provided with a substrate support means which is a part molded from a material having electrostatic dissipation properties and which comes into contact with the film forming surface of the substrate when supporting the peripheral edge of the substrate.

8. 2. The film forming apparatus according to claim 1, wherein the adjustment means adjusts the relative positions of the substrate attracted to the electrostatic chuck and the mask.

9. 2. The film forming apparatus according to claim 1, wherein the mask has a mask foil having a thickness of 10 [mu]m or more and 100 [mu]m or less, which is attached to a mask frame.

10. The film forming apparatus is a deposition-up type film forming apparatus, a vertically upper surface of the substrate is an attracting surface that is attracted to the electrostatic chuck, and a vertically lower surface of the substrate is a film formation surface, 2. The film forming apparatus according to claim 1, wherein a thin film of a deposition material having a predetermined pattern is formed on the film forming surface of the substrate through the mask.

11. A film formation apparatus comprising an adjustment unit that adjusts a relative position between a substrate and a mask based on a measurement result of an alignment mark formed on the substrate and a mask, and that forms a film of a deposition material on a film formation surface of the substrate through the mask, a charge removing means for removing electricity from the deposition surface of the substrate before the substrate and the mask approach each other by adjusting the position of the adjusting means; A film forming apparatus comprising:

12. A film formation method for a film formation apparatus, comprising: an adjustment unit that adjusts relative positions of a substrate and a mask based on measurement results of alignment marks formed on the substrate and the mask, and the film formation method forms a film of a deposition material through the mask on a film formation surface of the substrate attracted to an electrostatic chuck, the method comprising: a charge removing step of removing electricity from the deposition surface of the substrate by adjusting the position of the adjusting means before the substrate and the mask approach each other; A film forming method comprising the steps of:

13. A film formation method for a film formation apparatus, comprising: an adjustment unit that adjusts a relative position between the substrate and the mask based on a measurement result of an alignment mark formed on the substrate and the mask, and the film formation method forms a film of a deposition material on a film formation surface of the substrate through the mask, the method comprising: a charge removing step of removing electricity from the deposition surface of the substrate by adjusting the position of the adjusting means before the substrate and the mask approach each other; A film forming method comprising the steps of:

Images