Semiconductor light-emitting device

Abstract

To improve the radiation pattern characteristics of laser light.SOLUTION: A semiconductor light-emitting device 10 includes a surface-emitting laser element 20 including an element surface 21 from which laser light is emitted, a light-transmitting first resin portion 70 having a first resin surface 71 and sealing the surface-emitting laser element 20, and a second resin portion 80 different from the first resin portion 70, at least a portion of which is formed on the first resin surface 71 facing the element surface 21 in the Z direction.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to semiconductor light emitting devices. [Background technology]

[0002] 2. Description of the Related Art Conventionally, as light source devices mounted in various electronic devices, semiconductor light emitting devices including light emitting diodes (LEDs) as light sources have been known (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2013-41866 A

[0004] [overview] However, since LED elements are used in conventional semiconductor light-emitting devices, it is difficult to respond to high output of the light source. Therefore, instead of LED elements, it is conceivable to respond to high output by using surface-emitting laser elements such as vertical cavity surface-emitting lasers (VCSELs). In this case, there is room for improvement in the radiation pattern characteristics of the laser light emitted from the semiconductor light-emitting device by the surface-emitting laser elements.

[0005] A semiconductor light-emitting device according to one embodiment of the present disclosure includes a surface-emitting laser element including an element surface from which laser light is emitted, a first light-transmitting resin part for sealing the surface-emitting laser element and having a first resin surface, and a second resin part different from the first resin part, at least a portion of which is formed on the first resin surface facing the element surface in a direction perpendicular to the element surface. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a schematic perspective view of a semiconductor light emitting device according to the first embodiment. [Diagram 2] FIG. 2 is a schematic plan view of the inside of the semiconductor light emitting device of FIG. [Diagram 3] FIG. 3 is a schematic cross-sectional view of the semiconductor light emitting device taken along line F3-F3 in FIG. [Figure 4] FIG. 4 is a schematic plan view of the inside of the semiconductor light emitting device in which a first resin portion and a second resin portion are added to the structure of FIG. [Diagram 5] FIG. 5 is a graph showing a far-field pattern in a semiconductor light-emitting device of a comparative example. [Figure 6] FIG. 6 is a graph showing the far-field pattern in the semiconductor light emitting device of the first embodiment. [Figure 7] FIG. 7 is a schematic cross-sectional view of a semiconductor light emitting device according to a modified example of the first embodiment. [Figure 8] FIG. 8 is a schematic cross-sectional view of a semiconductor light emitting device according to the second embodiment. [Figure 9] FIG. 9 is a graph showing far-field patterns in the semiconductor light emitting devices of the first and second embodiments. [Figure 10] FIG. 10 is a schematic cross-sectional view of a semiconductor light emitting device according to a modification of the second embodiment. [Figure 11] FIG. 11 is a schematic cross-sectional view of a semiconductor light emitting device according to the third embodiment. [Figure 12] FIG. 12 is a schematic cross-sectional view of a semiconductor light emitting device according to a modification of the third embodiment. [Figure 13] FIG. 13 is a schematic plan view of the inside of the semiconductor light emitting device of the fourth embodiment. [Figure 14] FIG. 14 is a schematic cross-sectional view of the semiconductor light-emitting device taken along line F14-F14 in FIG. [Figure 15] FIG. 15 is a schematic plan view of the inside of the semiconductor light emitting device in which a first resin portion and a second resin portion are added to the structure of FIG. [Figure 16] FIG. 16 is a schematic cross-sectional view of a semiconductor light emitting device according to a first modification of the fourth embodiment. [Figure 17] FIG. 17 is a schematic cross-sectional view of a semiconductor light emitting device according to a second modification of the fourth embodiment. [Figure 18] FIG. 18 is a schematic plan view of a semiconductor light emitting device according to a third modification of the fourth embodiment. [Figure 19] FIG. 19 is a schematic cross-sectional view of the semiconductor light-emitting device of the third modified example taken along line F19-F19 in FIG. [Figure 20] FIG. 20 is a schematic cross-sectional view of a semiconductor light emitting device according to a modified example. [Figure 21] FIG. 21 is a schematic cross-sectional view of a semiconductor light emitting device according to a modified example.

[0007] [Detailed Description] Hereinafter, some embodiments of the semiconductor light emitting device of the present disclosure will be described with reference to the accompanying drawings. Note that, for simplicity and clarity of description, the components shown in the drawings are not necessarily drawn to scale. Also, hatching lines may be omitted in cross-sectional views to facilitate understanding. The accompanying drawings are merely illustrative of embodiments of the present disclosure and should not be considered as limiting the present disclosure.

[0008] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0009] The term "at least one" as used herein means "one or more" of the desired options. As an example, the term "at least one" as used herein means "only one option" or "both of two options" if the number of options is two. As another example, the term "at least one" as used herein means "only one option" or "any combination of two or more options" if the number of options is three or more.

[0010] As used in this specification, "the length (particle size, dimension) of A is equal to the length (particle size, dimension) of B" or "the length (particle size, dimension) of A and the length (particle size, dimension) of B are equal to each other" also includes a relationship in which the difference between the length (particle size, dimension) of A and the length (particle size, dimension) of B is within 10% of the length (particle size, dimension) of A, for example.

[0011] First Embodiment The configuration of a semiconductor light emitting device 10 of the first embodiment will be described with reference to FIGS. FIG. 1 is a schematic diagram showing a perspective structure of a semiconductor light emitting device 10 according to a first embodiment. In FIG. 1, in order to easily understand the drawing, an element container 30 described later is indicated by a two-dot chain line, and a first resin portion 70 described later is omitted. FIG. 2 is a schematic diagram showing a planar structure of the semiconductor light emitting device 10 shown in FIG. 1. In FIG. 2, in order to easily understand the drawing, a second resin portion 80 described later is omitted. FIG. 3 is a schematic diagram showing a cross-sectional structure of the semiconductor light emitting device 10 cut along line F3-F3 in FIG. 2. FIG. 4 is a schematic diagram showing a planar structure in which the first resin portion 70 and the second resin portion 80 are added to FIG. 2. Note that the term "planar view" used in the present disclosure refers to viewing the semiconductor light emitting device 10 or components of the semiconductor light emitting device 10 in the Z direction of the XYZ axes perpendicular to each other in FIG. 1.

[0012] As shown in FIG. 1, a semiconductor light emitting device 10 includes a surface emitting laser element 20 serving as a light source, and an element container 30 for housing the surface emitting laser element 20 therein. The element housing 30 includes a bottom wall 40 on which the surface-emitting laser element 20 is disposed, and a peripheral wall 50 surrounding the surface-emitting laser element 20 in a plan view. In one example, the bottom wall 40 and the peripheral wall 50 are integrally formed as a single unit. The element housing 30 is made of an insulating material. In one example, the element housing 30 is made of a light-shielding resin material. In one example, the element housing 30 is made of a black epoxy resin. The material constituting the element housing 30 can be changed as desired.

[0013] The bottom wall 40 is formed in a rectangular flat plate shape with the thickness direction being the Z direction. In one example, the bottom wall 40 is formed in a rectangular shape with the X direction being the longitudinal direction and the Y direction being the lateral direction in a plan view. As shown in Fig. 3, the bottom wall 40 includes a bottom wall front surface 41 and a bottom wall back surface 42 facing in opposite directions in the Z direction, and four bottom wall side surfaces 43 connecting the bottom wall front surface 41 and the bottom wall back surface 42.

[0014] The bottom wall 40 is provided with a plurality of terminals 60 penetrating the bottom wall 40 in the Z direction. Each terminal 60 includes a terminal front surface 61 facing the same side as the bottom wall front surface 41, and a terminal back surface 62 facing the same side as the bottom wall back surface 42. The terminal front surface 61 is exposed from the bottom wall front surface 41. The terminal back surface 62 is exposed from the bottom wall back surface 42. Each terminal 60 is made of a material containing, for example, copper (Cu), aluminum (Al), etc. In the first embodiment, each terminal 60 is made of a material containing Cu. Each terminal 60 is formed by etching a metal plate containing, for example, Cu.

[0015] As shown in FIG. 2, the multiple terminals 60 include a first terminal 60A and a second terminal 60B. The first terminal 60A is a terminal on which the surface-emitting laser element 20 is mounted. The second terminal 60B is a terminal electrically connected to the surface-emitting laser element 20. The first terminal 60A and the second terminal 60B are arranged at the same position in the Y direction and spaced apart from each other in the X direction. The first terminal 60A is formed in a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction in a plan view. The second terminal 60B is formed in a rectangular shape with the Y direction as the longitudinal direction and the X direction as the lateral direction in a plan view.

[0016] As shown in FIG. 1 and FIG. 2, the peripheral wall 50 is provided so as to rise from the outer periphery of the bottom wall 40 in the Z direction. The peripheral wall 50 is formed in a rectangular frame shape in a plan view. The peripheral wall 50 includes a peripheral wall surface 51 facing the same side as the bottom wall surface 41, a peripheral wall inner side surface 52, and a peripheral wall outer side surface 53. In one example, as shown in FIG. 3, the peripheral wall outer side surface 53 is formed so as to be flush with the bottom wall side surface 43 of the bottom wall 40. The peripheral wall inner side surface 52 is a side surface of the peripheral wall 50 opposite to the peripheral wall outer side surface 53. The peripheral wall inner side surface 52 is formed by an inclined surface that inclines toward the outside of the element container 30 as it moves from the bottom wall surface 41 toward the peripheral wall surface 51. It can also be said that the peripheral wall inner side surface 52 is formed by an inclined surface that inclines toward the peripheral wall outer side surface 53 as it moves from the bottom wall surface 41 toward the peripheral wall surface 51.

[0017] The element housing 30 defines an accommodation space 31 by a bottom wall 40 and a peripheral wall 50. The accommodation space 31 is a space for housing the surface-emitting laser element 20. The element housing 30 opens on the same side as the peripheral wall surface 51. In one example, the accommodation space 31 is formed so that the planar area perpendicular to the Z direction increases with increasing distance from the bottom wall surface 41 in the Z direction.

[0018] The surface-emitting laser element 20 accommodated in the accommodation space 31 of the element accommodation body 30 is formed in a rectangular flat plate shape with the Z direction being the thickness direction. Therefore, it can be said that the Z direction is the "thickness direction of the surface-emitting laser element 20". The surface-emitting laser element 20 can be a VCSEL element or a two-dimensional photonic crystal surface-emitting laser element. In one example, the surface-emitting laser element 20 is a VCSEL element.

[0019] The surface-emitting laser element 20 includes an element front surface 21 and an element back surface 22 facing opposite to each other in the Z direction, and four element side surfaces 23 connecting the element front surface 21 and the element back surface 22. The element front surface 21 faces the same side as the peripheral wall surface 51 of the peripheral wall 50 of the element housing body 30. Therefore, it can be said that the element housing body 30 is open on the same side as the element front surface 21. Here, the Z direction is the direction perpendicular to the element front surface 21. Therefore, a plan view means "viewed from a direction perpendicular to the element front surface 21."

[0020] The surface-emitting laser element 20 is configured to emit laser light from an element surface 21. The laser light is emitted from the element surface 21 in the Z direction. In one example, as shown in FIG. 2, the surface-emitting laser element 20 includes a plurality of light-emitting sections 24 formed on the element surface 21. Each of the plurality of light-emitting sections 24 is configured to emit laser light from the element surface 21 in the Z direction. It can be said that the surface-emitting laser element 20 includes a light-emitting region 25 in which the plurality of light-emitting sections 24 are formed. The light-emitting region 25 can be defined as a dashed-line region surrounding all the light-emitting sections 24 on the element surface 21. The shape of the light-emitting region 25 in plan view is changed according to the arrangement of the plurality of light-emitting sections 24. In the example shown in FIG. 2, the shape of the light-emitting region 25 in plan view is rectangular.

[0021] 3, the surface-emitting laser element 20 includes an element substrate 26. The element substrate 26 may include a semiconductor substrate containing, for example, gallium arsenide (GaAs) and a semiconductor layer on the semiconductor substrate. The semiconductor layer may include a plurality of semiconductor layers, such as an active layer and a distributed Bragg reflector (DBR) layer, and a conductive layer. The plurality of light-emitting sections 24 are provided on the element substrate 26.

[0022] 2, a surface electrode 27 is formed on the element surface 21. The surface-emitting laser element 20 includes a conductive layer provided on an element substrate 26 and electrically connected to a plurality of light-emitting sections 24. The surface electrode 27 is electrically connected to the conductive layer. The surface electrode 27 is formed in a strip shape extending in the Y direction in a plan view. In one example, the surface electrode 27 is provided on one of both ends in the X direction of the element surface 21 that is closer to the second terminal 60B.

[0023] The surface electrode 27 is electrically connected to the second terminal 60B by the wire WR. In this manner, the surface electrode 27 is configured as a region for connecting the first wire W1. In the example shown in FIG. 2, the wire WR extends along the X direction in a plan view. The wire WR is, for example, a bonding wire. The wire WR includes at least one of Au (gold), Al, and Cu.

[0024] 3, a rear surface electrode 28 is formed on the rear surface 22 of the element. In one example, the rear surface electrode 28 is formed over the entire surface of the rear surface 22 of the element. In one example, the rear surface electrode 28 constitutes a cathode electrode. In one example, the front surface electrode 27 constitutes an anode electrode.

[0025] The surface-emitting laser element 20 is mounted on the first terminal 60A. More specifically, the surface-emitting laser element 20 is bonded to a terminal surface 61 of the first terminal 60A by a conductive bonding material SD. As a result, the back electrode 28 of the surface-emitting laser element 20 is electrically connected to the first terminal 60A via the conductive bonding material SD.

[0026] As shown in FIG. 3, the semiconductor light emitting device 10 includes a first resin portion 70 and a second resin portion 80. The first resin portion 70 and the second resin portion 80 are made of a resin material. The first resin portion 70 is filled in the housing space 31 of the element housing 30. The first resin portion 70 seals the surface-emitting laser element 20 and the wire WR. The first resin portion 70 is made of a light-transmitting resin material. In one example, the first resin portion 70 is made of a transparent resin material. The first resin portion 70 has a first resin surface 71. In the example shown in FIG. 3, the first resin surface 71 is formed so as to be at the same position as the peripheral wall surface 51 of the peripheral wall 50 in the Z direction. Therefore, it can be said that the first resin portion 70 covers the entire surface of the peripheral wall inner side surface 52 of the peripheral wall 50.

[0027] 3 and 4, the second resin part 80 is in contact with the first resin surface 71. The second resin part 80 is selectively provided on the first resin surface 71. In one example, the second resin part 80 is provided at a position spaced apart from the outer circumferential edge of the first resin surface 71. In other words, in a plan view, the second resin part 80 is provided at a position spaced apart from the peripheral wall 50.

[0028] In one example, at least a portion of the second resin portion 80 is formed on the first resin surface 71 at a position facing the surface-emitting laser element 20 in the Z direction. In the first embodiment, the second resin portion 80 is formed so as to cover the entire light-emitting region 25 of the surface-emitting laser element 20 in a planar view. In other words, the second resin portion 80 is formed so as to face all of the multiple light-emitting portions 24 in a planar view.

[0029] 4, the second resin part 80 is formed in a circular shape in a plan view. The second resin part 80 is disposed such that the center CA of the circle is at a position different from the center CB of the element accommodating body 30. In one example, the center CA of the second resin part 80 is shifted in the X direction from the center CB of the element accommodating body 30. Here, the center CB of the element accommodating body 30 can be defined as the intersection point of two diagonal lines connecting the four corners of the peripheral wall 50.

[0030] The second resin part 80 includes a portion that protrudes in the Y direction from the element surface 21 of the surface-emitting laser element 20 in a planar view. In other words, the diameter of the second resin part 80 is larger than the dimension of the surface-emitting laser element 20 in the short direction. On the other hand, the diameter of the second resin part 80 is smaller than the dimension of the surface-emitting laser element 20 in the long direction. The diameter of the second resin part 80 in a planar view can be changed arbitrarily. Also, the shape of the second resin part 80 in a planar view can be changed arbitrarily.

[0031] The second resin part 80 is different from the first resin part 70. In one example, the second resin part 80 is made of a light-shielding resin material. In one example, the second resin part 80 is made of a resin material having a higher light reflectance than the first resin part 70. That is, the second resin part 80 is made of a reflective material. In the first embodiment, the second resin part 80 is made of a white resin material as a reflective material. As the white resin material, for example, an epoxy resin mixed with titanium oxide or silica may be used.

[0032] 3, the second resin part 80 is formed so as to be curved convexly on the side away from the first resin surface 71. The second resin part 80 has a second resin surface 81. The second resin surface 81 is a resin surface different from the surface in contact with the first resin surface 71. The second resin surface 81 is curved so as to be convexly on the side away from the first resin surface 71 in the Z direction.

[0033] 3, the second resin portion 80 is located on the opposite side of the bottom wall 40 with respect to the peripheral wall surface 51 of the peripheral wall 50 in the Z direction. In other words, the second resin surface 81 is located on the opposite side of the bottom wall 40 with respect to the peripheral wall surface 51 in the Z direction.

[0034] [Operation of the first embodiment] The operation of the semiconductor light emitting device 10 of the first embodiment will be described. 5 and 6 show far field pattern (FFP) data as the radiation pattern characteristic of the laser light of the semiconductor light emitting device 10. The far field pattern is data showing the relationship between the spread angle of the laser light and the relative light intensity. FIG. 5 shows FFP data of a semiconductor light emitting device of a comparative example in which the second resin part 80 is omitted. FIG. 6 shows FFP data of the semiconductor light emitting device 10 of the first embodiment. In FIGS. 5 and 6, the horizontal axis shows the angle, and the vertical axis shows the relative light intensity. In FIG. 6, the position of the maximum light intensity of the laser light is shown as the reference angle (0°). In FIG. 5, the FFP data of the semiconductor light emitting device of the comparative example is shown at an angle position corresponding to the FFP data of the semiconductor light emitting device 10 of the first embodiment. The spread angle of the laser light is shown as an angle range in which a light intensity of, for example, 1 / 2 or more of the maximum light intensity is obtained.

[0035] 5, in the semiconductor light-emitting device of the comparative example, the relative light intensity is prominently high in the light-emitting region 25 of the surface-emitting laser element 20, while the spread angle θB of the laser light is small. In other words, the semiconductor light-emitting device of the comparative example emits localized laser light only from the light-emitting region 25.

[0036] In the semiconductor light emitting device 10 of the first embodiment, the laser light emitted from the surface emitting laser element 20 is reflected by the second resin part 80. The laser light reflected by the second resin part 80 is reflected again by components of the semiconductor light emitting device 10, such as the first terminal 60A, the second terminal 60B, and the wire WR. The reflected laser light is then emitted from the periphery of the second resin part 80 to the outside of the semiconductor light emitting device 10 via the first resin part 70. For this reason, as shown in FIG. 6, the spread angle θA of the laser light emitted from the semiconductor light emitting device 10 becomes large.

[0037] [Effects of the first embodiment] According to the semiconductor light emitting device 10 of the first embodiment, the following effects can be obtained. (1-1) The semiconductor light-emitting device 10 includes a surface-emitting laser element 20 including an element surface 21 from which laser light is emitted, a light-transmitting first resin part 70 having a first resin surface 71 for sealing the surface-emitting laser element 20, and a second resin part 80 different from the first resin part 70, at least a portion of which is formed on the first resin surface 71 facing the element surface 21 in the Z direction.

[0038] According to this configuration, the laser light emitted by the surface-emitting laser element 20 is influenced by the first resin part 70 and the second resin part 80 different from the first resin part 70, and is emitted from the semiconductor light-emitting device 10. Therefore, by including the first resin part 70 and the second resin part 80, the radiation pattern characteristics of the laser light emitted from the semiconductor light-emitting device 10 can be improved.

[0039] (1-2) The second resin portion 80 has a higher light reflectance than the first resin portion 70. According to this configuration, the laser light emitted from the surface-emitting laser element 20 is reflected by the second resin part 80. This makes it possible to prevent the relative light intensity of the laser light emitted from the semiconductor light-emitting device 10 from becoming locally high, and also makes it possible to increase the spread angle of the laser light.

[0040] (1-3) The second resin portion 80 is made of a reflective material. According to this configuration, the laser light emitted from the surface-emitting laser element 20 is easily reflected by the second resin part 80. This makes it possible to further prevent the relative light intensity of the laser light emitted from the semiconductor light-emitting device 10 from becoming locally high, and also makes it possible to increase the spread angle of the laser light.

[0041] (1-4) The second resin portion 80 is selectively provided on the first resin surface 71 of the first resin portion 70. According to this configuration, the laser light emitted from the surface-emitting laser element 20 is reflected by the second resin portion 80, and then emitted to the outside of the semiconductor light-emitting device 10 from a portion of the first resin portion 70 where the second resin portion 80 is not provided. This makes it possible to prevent the relative light intensity of the laser light emitted from the semiconductor light-emitting device 10 from becoming locally high, and also makes it possible to increase the spread angle of the laser light.

[0042] (1-5) The second resin portion 80 is provided at a position spaced apart from the outer edge portion of the first resin surface 71 of the first resin portion 70. According to this configuration, the laser light emitted from the surface-emitting laser element 20 is reflected by the second resin part 80, and then emitted to the outside of the semiconductor light-emitting device 10 from at least the outer edge part of the first resin surface 71 of the first resin part 70. This makes it possible to prevent the relative light intensity of the laser light emitted from the semiconductor light-emitting device 10 from becoming locally high, and also makes it possible to increase the spread angle of the laser light.

[0043] (1-6) The surface-emitting laser element 20 includes a plurality of light-emitting portions 24 provided on the element surface 21. The second resin portion 80 faces all of the plurality of light-emitting portions 24 in a plan view. According to this configuration, the laser light emitted from all of the light-emitting sections 24 of the surface-emitting laser element 20 is reflected by the second resin section 80. This makes it possible to further prevent the relative light intensity of the laser light emitted from the semiconductor light-emitting device 10 from becoming locally high.

[0044] <Modification of the first embodiment> The semiconductor light emitting device 10 of the first embodiment may be modified, for example, as follows: As one example, Fig. 7 shows a schematic cross-sectional structure of a modified semiconductor light emitting device 10 of the first embodiment, taken along the same position as line F3-F3 in Fig. 2.

[0045] As shown in Fig. 7, the first resin portion 70 includes a plurality of diffusing materials 72. The plurality of diffusing materials 72 are dispersed in the first resin portion 70 as fine particles that diffuse light. The diffusing materials 72 diffuse light inside the first resin portion 70 by reflecting (scattering) the light at the interface between the resin in the first resin portion 70 and the diffusing materials 72. The diffusing materials 72 serve to widen the directivity angle of the laser light emitted from the first resin portion 70 by diffusing the laser light emitted from the element surface 21 of the surface-emitting laser element 20 inside the first resin portion 70.

[0046] The material of the diffusing material 72 is not particularly limited, but for example, silica or other glass materials can be used. In one example, a spherical silica filler is used as the diffusing material 72. The particle size of the diffusing material 72 is not particularly limited, but for example, a particle size that is sufficiently small with respect to the wavelength of the laser light emitted from the surface-emitting laser element 20 is selected so that scattering occurs predominantly.

[0047] The diffusion material 72 is mixed with the first resin portion 70 at a predetermined compounding ratio. In one example, the diffusion material 72 is evenly dispersed in the first resin portion 70. The compounding ratio of the diffusion material 72 with respect to the resin of the first resin portion 70 is not particularly limited, and may be greater than 0% and less than 100%. The larger the compounding ratio of the diffusion material 72 is, the wider the beam angle of the laser light of the surface-emitting laser element 20 can be. Furthermore, by limiting the upper limit of the compounding ratio of the diffusion material 72 to a predetermined value, a large decrease in the output and radiation intensity of the laser light of the semiconductor light-emitting device 10 can be suppressed.

[0048] In one example, the diffusion material 72 is selected to have a linear expansion coefficient smaller than that of the resin of the first resin portion 70. In this configuration, the diffusion material 72 can reduce thermal stress generated in the first resin portion 70 compared to a case in which the first resin portion 70 is made of resin only. This can prevent the wire WR from being broken due to the thermal stress of the first resin portion 70.

[0049] <Second embodiment> A semiconductor light emitting device 10 of the second embodiment will be described with reference to Figures 8 and 9. The semiconductor light emitting device 10 of the second embodiment differs from the semiconductor light emitting device 10 of the first embodiment mainly in the shape of the first resin surface 71 of the first resin portion 70. The following describes the differences from the first embodiment. Meanwhile, components common to the first embodiment are given the same reference numerals and their description will be omitted.

[0050] FIG. 8 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 of the second embodiment, taken along the same position as line F3-F3 in FIG. 8, the first resin surface 71 of the first resin part 70 is curved so as to be concave toward the surface-emitting laser element 20. In other words, the first resin surface 71 is formed in a curved concave shape that is curved and concave from the peripheral wall surface 51 of the peripheral wall 50 in the element container 30 toward the bottom wall 40. In other words, the thickness of the first resin part 70 becomes thinner toward the surface-emitting laser element 20. Here, the thickness of the first resin part 70 can be defined by the distance in the Z direction between the bottom wall surface 41 of the bottom wall 40 and the first resin surface 71.

[0051] The second resin part 80 provided on the first resin surface 71 has a shape similar to that of the second resin part 80 in the first embodiment. The positional relationship between the second resin part 80 and the surface-emitting laser element 20 in a plan view is similar to that of the first embodiment. On the other hand, the positional relationship between the second resin part 80 and the surface-emitting laser element 20 in the Z direction is different from that of the first embodiment. More specifically, the second resin part 80 is disposed closer to the surface-emitting laser element 20 in the Z direction than in the first embodiment. The contact surface of the second resin part 80 with the first resin surface 71 is disposed closer to the surface-emitting laser element 20 than the peripheral wall surface 51 of the peripheral wall 50. In the example shown in FIG. 8, a part of the second resin part 80 is disposed so as to be located closer to the surface-emitting laser element 20 than the peripheral wall surface 51 in the Z direction. In other words, the second resin surface 81 of the second resin part 80 includes a portion that is positioned closer to the surface-emitting laser element 20 than the peripheral wall surface 51 in the Z direction, and a portion that protrudes from the peripheral wall surface 51 to the side opposite the bottom wall 40 in the Z direction.

[0052] Fig. 9 shows FFP data for the semiconductor light emitting device 10 of the first embodiment and FFP data for the semiconductor light emitting device 10 of the second embodiment. The FFP data for the first embodiment is shown by the dashed line graph in Fig. 9. The FFP data for the second embodiment is shown by the solid line graph in Fig. 9. Note that the FFP data for the second embodiment shows the angular position based on the FFP data for the first embodiment.

[0053] 9, the laser light emitted from the semiconductor light emitting device 10 of the second embodiment has a larger divergence angle θC than that of the semiconductor light emitting device 10 of the first embodiment. On the other hand, in the peripheral regions RA and RB at both ends which have angles larger than the reference position (0°), the light intensity of the semiconductor light emitting device 10 of the second embodiment is smaller than that of the semiconductor light emitting device 10 of the first embodiment. Therefore, the semiconductor light emitting device 10 of the second embodiment has radiation pattern characteristics in which the divergence angle θC is larger and the light intensity of the peripheral regions RA and RB is smaller than that of the semiconductor light emitting device 10 of the first embodiment.

[0054] In this way, the radiation pattern characteristics of the semiconductor light emitting device 10 are obtained by the first resin part 70 and the second resin part 80. Then, by adjusting the shape of the first resin part 70, for example the shape of the first resin surface 71, the arrangement position of the second resin part 80, etc., the radiation pattern characteristics of the laser light emitted from the semiconductor light emitting device 10 can be improved to desired characteristics.

[0055] [Effects of the second embodiment] According to the semiconductor light emitting device 10 of the second embodiment, the following effects can be obtained. (2-1) The first resin surface 71 of the first resin portion 70 is curved so as to be concave toward the surface-emitting laser element 20 .

[0056] According to this configuration, the spread angle of the laser light emitted from the semiconductor light emitting device 10 can be made larger than that of the semiconductor light emitting device 10 of the first embodiment. Also, in peripheral regions RA, RB (see FIG. 9) at both ends where the angle is larger than the reference position (0°), the light intensity of the laser light can be made smaller than that of the semiconductor light emitting device 10 of the first embodiment. In this way, the radiation pattern characteristics can be changed by changing the shape of the first resin surface 71.

[0057] (2-2) In the Z direction, a portion of the second resin portion 80 is disposed so as to be located closer to the surface-emitting laser element 20 than the peripheral wall surface 51 is. According to this configuration, the height of the semiconductor light emitting device 10 can be made lower than when the entire second resin portion 80 is located on the opposite side of the peripheral wall surface 51 from the surface emitting laser element 20 .

[0058] <Modification of the second embodiment> The semiconductor light emitting device 10 of the second embodiment may be modified, for example, as follows. The configuration of the first resin portion 70 can be changed as desired. This modified semiconductor light emitting device 10 will be described with reference to Fig. 10. Fig. 10 shows a schematic cross-sectional structure of the modified semiconductor light emitting device 10 of the second embodiment, taken along the same line as F3-F3 in Fig. 2.

[0059] As shown in FIG. 10, the first resin portion 70 includes a plurality of diffusing materials 72. The plurality of diffusing materials 72 are dispersed in the first resin portion 70 as fine particles that diffuse light. The diffusing materials 72 diffuse light inside the first resin portion 70 by reflecting (scattering) the light at the interface between the resin in the first resin portion 70 and the diffusing materials 72. The diffusing materials 72 diffuse the laser light emitted from the element surface 21 of the surface-emitting laser element 20 inside the first resin portion 70, thereby widening the directivity angle of the laser light emitted from the first resin portion 70. The diffusing materials 72 are the same as the diffusing materials 72 of the semiconductor light-emitting device 10 of the modified example of the first embodiment shown in FIG. 7, for example.

[0060] The second resin surface 81 of the second resin portion 80 may be disposed so that the entirety of the second resin surface 81 is closer to the surface-emitting laser element 20 than the peripheral wall surface 51 of the peripheral wall 50. This allows the semiconductor light emitting device 10 to be further reduced in height.

[0061] The first resin surface 71 of the first resin part 70 may include a portion curved to be concave toward the surface-emitting laser element 20 and a flat surface perpendicular to the Z direction. The flat surface may be formed, for example, on a portion of the first resin surface 71 facing the surface-emitting laser element 20 in the Z direction.

[0062] <Third embodiment> A semiconductor light emitting device 10 of the third embodiment will be described with reference to Fig. 11. The semiconductor light emitting device 10 of the third embodiment differs from the semiconductor light emitting device 10 of the first embodiment mainly in the configurations of the first resin portion 70 and the second resin portion 80. The following describes the differences from the first embodiment. Meanwhile, components common to the first embodiment are given the same reference numerals, and descriptions thereof will be omitted.

[0063] As shown in Fig. 11, the first resin part 70 seals the surface-emitting laser element 20 and the wire WR. The first resin surface 71 of the first resin part 70 is located closer to the bottom wall 40 than the peripheral wall surface 51 of the peripheral wall 50 of the element container 30. Therefore, the first resin part 70 covers a portion of the peripheral wall inner side surface 52 of the peripheral wall 50 that is closer to the bottom wall 40. The first resin part 70 is made of a light-transmitting resin material, as in the first embodiment. In one example, the first resin part 70 is made of a transparent resin material.

[0064] The first resin portion 70 includes a plurality of first diffusion materials 72 A. In one example, the plurality of first diffusion materials 72 A have a configuration similar to that of the plurality of diffusion materials 72 in the first resin portion 70 of the modification of the first embodiment shown in FIG.

[0065] The second resin portion 80 covers the entire first resin surface 71 of the first resin portion 70. Therefore, the second resin portion 80 covers the portion of the peripheral wall inner side surface 52 of the peripheral wall 50 that protrudes from the first resin portion 70.

[0066] The second resin portion 80 is made of a translucent resin material. In one example, the second resin portion 80 is made of a transparent resin material. In the second embodiment, the resin material of the second resin portion 80 is the same as the resin material of the first resin portion 70.

[0067] The second resin portion 80 includes a plurality of second diffusing materials 82. The plurality of second diffusing materials 82 are dispersed in the second resin portion 80 as fine particles that diffuse light. The second diffusing materials 82 diffuse light inside the second resin portion 80 by reflecting (scattering) the light at the interface between the resin in the second resin portion 80 and the second diffusing materials 82. The second diffusing materials 82 serve to widen the directivity angle of the laser light emitted from the second resin portion 80 by further diffusing the laser light emitted from the first resin portion 70 inside the second resin portion 80.

[0068] The material of the second diffusing material 82 is not particularly limited, and for example, silica or other glass materials can be used. In one example, a spherical silica filler is used as the second diffusing material 82. The particle size of the second diffusing material 82 is not particularly limited, and for example, a particle size that is sufficiently small with respect to the wavelength of the laser light emitted from the surface-emitting laser element 20 is selected so that scattering occurs predominantly. In one example, the second diffusing material 82 is made of the same material as the first diffusing material 72A.

[0069] The second diffusing material 82 is mixed with the second resin part 80 at a predetermined compounding ratio. In one example, the second diffusing material 82 is evenly dispersed in the second resin part 80. The compounding ratio of the second diffusing material 82 with respect to the resin of the second resin part 80 is not particularly limited, and may be greater than 0% and less than 100%. The larger the compounding ratio of the second diffusing material 82 is, the wider the beam angle of the laser light of the surface-emitting laser element 20 can be. Furthermore, by limiting the upper limit of the compounding ratio of the second diffusing material 82 to a predetermined value, a large decrease in the output and radiation intensity of the laser light of the semiconductor light-emitting device 10 can be suppressed.

[0070] The second resin portion 80 is different from the first resin portion 70. In the second embodiment, the compounding ratio of the plurality of first diffusion materials 72A to the first resin portion 70 and the compounding ratio of the plurality of second diffusion materials 82 to the second resin portion 80 are different from each other. Specifically, the concentration of the second diffusion material 82 in the second resin portion 80 is higher than the concentration of the first diffusion material 72A in the first resin portion 70. In one example, the weight % concentration of the second diffusion material 82 in the second resin portion 80 is higher than the weight % concentration of the first diffusion material 72A in the first resin portion 70. In the second embodiment, the particle size of the second diffusion material 82 is equal to the particle size of the first diffusion material 72A. In one example, the same silica filler is used for the first diffusion material 72A and the second diffusion material 82. Meanwhile, the number of the second diffusion materials 82 per unit volume is greater than the number of the first diffusion materials 72A per unit volume.

[0071] [Effects of the third embodiment] According to the semiconductor light emitting device 10 of the third embodiment, the following effects can be obtained. (3-1) The first resin portion 70 includes a first diffusing material 72A. The second resin portion 80 includes a second diffusing material 82. The concentration of the second diffusing material 82 in the second resin portion 80 is higher than the concentration of the first diffusing material 72A in the first resin portion 70.

[0072] According to this configuration, the laser light emitted from the surface-emitting laser element 20 is more easily diffused in the second resin part 80 located closer to the laser light emission side of the semiconductor light-emitting device 10 than the first resin part 70. Therefore, the spread angle of the laser light emitted from the semiconductor light-emitting device 10 can be increased.

[0073] (3-2) The second resin portion 80 covers the entire first resin surface 71 of the first resin portion 70 . According to this configuration, all of the laser light emitted from the surface-emitting laser element 20 passes through the second resin portion 80 and is emitted from the semiconductor light-emitting device 10. Therefore, the spread angle of the laser light emitted from the semiconductor light-emitting device 10 can be increased.

[0074] <Modification of the third embodiment> The semiconductor light emitting device 10 of the third embodiment may be modified, for example, as follows. The configuration of the first resin portion 70 can be changed as desired. In one example, the first diffusion material 72A may be omitted from the first resin portion 70.

[0075] The configuration of the second resin portion 80 can be changed as desired. This modified semiconductor light emitting device 10 will be described with reference to Fig. 12. Fig. 12 shows a schematic cross-sectional structure of the modified semiconductor light emitting device 10 of the third embodiment, taken along the same position as line F3-F3 in Fig. 2.

[0076] 12, the second resin part 80 is selectively provided on the first resin surface 71 of the first resin part 70. The second resin part 80 is provided at a position spaced apart from the outer periphery of the first resin surface 71. The second resin part 80 has, for example, the same shape and size as the second resin part 80 of the first embodiment.

[0077] The second resin portion 80 is made of a translucent resin material similar to the third embodiment. In one example, the second resin portion 80 is made of a transparent resin material. The second resin portion 80 also includes a second diffusion material 82 similar to the third embodiment. The configuration and size of the second diffusion material 82 are the same as those of the second diffusion material 82 of the third embodiment, for example.

[0078] 12, the compounding ratio of the plurality of first diffusing materials 72A to the first resin portion 70 is different from the compounding ratio of the plurality of second diffusing materials 82 to the second resin portion 80. Specifically, the concentration of the second diffusing material 82 in the second resin portion 80 is higher than the concentration of the first diffusing material 72A in the first resin portion 70. In one example, the weight percent concentration of the second diffusing material 82 in the second resin portion 80 is higher than the weight percent concentration of the first diffusing material 72A in the first resin portion 70.

[0079] 12, the shape of the first resin portion 70 can be changed as desired. In one example, the first resin surface 71 of the first resin portion 70 may be formed to be at the same position as the peripheral wall surface 51 of the peripheral wall 50 in the Z direction, as in the first embodiment. In this case, the second resin portion 80 is located on the opposite side of the peripheral wall surface 51 to the surface-emitting laser element 20 in the Z direction. In the semiconductor light-emitting device 10 of the modified example shown in FIG. 12, the first diffusing material 72A may be omitted from the first resin portion 70.

[0080] <Fourth embodiment> A semiconductor light emitting device 10 of the fourth embodiment will be described with reference to Figs. 13 to 15. The semiconductor light emitting device 10 of the fourth embodiment differs from the semiconductor light emitting device 10 of the first embodiment mainly in that it includes a configuration of a plurality of terminals 60 and a light receiving element 90. The following describes the differences from the first embodiment. Meanwhile, components common to the first embodiment are given the same reference numerals and descriptions thereof will be omitted.

[0081] 13, the multiple terminals 60 include first to third terminals 60A to 60C. The second terminal 60B and the third terminal 60C are arranged spaced apart from the first terminal 60A in the Y direction. The second terminal 60B and the third terminal 60C are arranged at the same position as each other in the Y direction and spaced apart from each other in the X direction. Both the second terminal 60B and the third terminal 60C are arranged at positions overlapping with the first terminal 60A when viewed from the X direction.

[0082] In the semiconductor light emitting device 10, both the surface emitting laser element 20 and the light receiving element 90 are housed in the housing space 31 of the element housing body 30. The light receiving element 90 is disposed apart from the surface emitting laser element 20 in the X direction. Here, the X direction is an example of a "first direction intersecting with the direction perpendicular to the element surface 21 of the surface emitting laser element 20."

[0083] Both the surface-emitting laser element 20 and the light-receiving element 90 are mounted on the first terminal 60A. The second terminal 60B is disposed at a position corresponding to the surface-emitting laser element 20 in the X direction. The third terminal 60C is disposed at a position corresponding to the light-receiving element 90 in the X direction.

[0084] The surface-emitting laser element 20 is disposed in a direction in which the surface electrode 27 is opposite to the light-receiving element 90 in the X direction. The first wire W1 is connected to the surface electrode 27. The surface electrode 27 is electrically connected to the second terminal 60B by the first wire W1. In the example shown in FIG. 13, the first wire W1 extends along the Y direction in a plan view. The first wire W1 is, for example, a bonding wire. The first wire W1 includes at least one of Au, Al, and Cu.

[0085] 14, the surface-emitting laser element 20 is bonded to the terminal surface 61 of the first terminal 60A by the conductive bonding material SD, as in the first embodiment. As a result, the back electrode 28 of the surface-emitting laser element 20 is electrically connected to the first terminal 60A via the conductive bonding material SD.

[0086] 13 and 14, the light receiving element 90 is formed in a rectangular plate shape with the thickness direction being the Z direction. The light receiving element 90 includes a light receiving front surface 91 and a light receiving back surface 92 facing opposite sides in the Z direction, and a light receiving side surface 93 connecting the light receiving front surface 91 and the light receiving back surface 92. The light receiving element 90 is, for example, a photodiode.

[0087] The light-receiving surface 91 faces the same side as the element surface 21 of the surface-emitting laser element 20. A light-receiving region 94 and a surface electrode 95 are formed on the light-receiving surface 91. The surface electrode 95 is provided at a position overlapping with the light-receiving region 94 in a plan view, for example.

[0088] The surface electrode 95 is electrically connected to the third terminal 60C by a second wire W2. In the example shown in FIG. 13, the second wire W2 extends along the Y direction in a plan view. The second wire W2 is, for example, a bonding wire. The second wire W2 includes at least one of Au, Al, and Cu. The second wire W2 may be made of, for example, the same material as the first wire W1.

[0089] 14, the light-receiving back surface 92 faces the same side as the element back surface 22 of the surface-emitting laser element 20. A back surface electrode 96 is formed on the light-receiving back surface 92. In one example, the back surface electrode 96 is formed over the entire light-receiving back surface 92. In one example, the back surface electrode 96 constitutes a cathode electrode. In one example, the front surface electrode 95 constitutes an anode electrode.

[0090] The light receiving element 90 is joined to the terminal surface 61 of the first terminal 60A by the conductive bonding material SD. As a result, the back electrode 96 of the light receiving element 90 is electrically connected to the first terminal 60A via the conductive bonding material SD. Therefore, it can be said that the back electrode 96 of the light receiving element 90 is electrically connected to the back electrode 28 of the surface-emitting laser element 20. In addition, since the surface-emitting laser element 20 and the light receiving element 90 are mounted on the terminal surface 61 of the common first terminal 60A, it can be said that the surface-emitting laser element 20 and the light receiving element 90 are arranged on the same plane.

[0091] As shown in FIGS. 14 and 15, the semiconductor light emitting device 10 includes a first resin portion 70 and a second resin portion 80. As shown in FIG. The first resin part 70 seals both the surface-emitting laser element 20 and the light-receiving element 90. The first resin part 70 also seals, for example, both the first wire W1 and the second wire W2. The first resin part 70 includes a first resin surface 71. The first resin surface 71 is curved so as to be concave toward the surface-emitting laser element 20. The first resin surface 71 is curved so as to be concave toward the light-receiving element 90. In one example, a portion of the first resin surface 71 facing the surface-emitting laser element 20 and the light-receiving element 90 may include a flat surface perpendicular to the Z direction.

[0092] The first resin portion 70 includes a plurality of diffusing materials 72. The plurality of diffusing materials 72 are dispersed in the first resin portion 70 as fine particles that diffuse light. The diffusing materials 72 diffuse light inside the first resin portion 70 by reflecting (scattering) light at the interface between the resin in the first resin portion 70 and the diffusing materials 72. The diffusing materials 72 serve to widen the directivity angle of the laser light emitted from the first resin portion 70 by diffusing the laser light emitted from the element surface 21 of the surface-emitting laser element 20 inside the first resin portion 70. The diffusing materials 72 may be the same as the diffusing materials 72 in the semiconductor light-emitting device 10 of the modified example of the first embodiment shown in FIG. 7, for example.

[0093] The light receiving element 90 receives a part of the laser light emitted from the element surface 21 of the surface emitting laser element 20 and diffused by the diffusing material 72 of the first resin part 70. The larger the compounding ratio of the diffusing material 72, the easier it is for the light receiving element 90 to receive scattered light.

[0094] 15, the second resin part 80 is selectively provided on the first resin surface 71. The second resin part 80 is provided at a position spaced apart from the outer circumferential edge of the first resin surface 71. In other words, the second resin part 80 is provided at a position spaced apart from the peripheral wall 50 of the element accommodating body 30 in a plan view.

[0095] At least a portion of the second resin part 80 is formed at a position on the first resin surface 71 corresponding to the surface-emitting laser element 20 in the Z direction. The second resin part 80 faces all of the multiple light-emitting parts 24 of the surface-emitting laser element 20 in a planar view. On the other hand, the second resin part 80 is disposed at a position different from the position facing the light-receiving element 90 in a planar view. Specifically, the second resin part 80 is disposed closer to the surface-emitting laser element 20 than the position facing the light-receiving element 90 in a planar view. The shape of the second resin part 80 is similar to the shape of the second resin part 80 of the first embodiment shown in FIG. 4.

[0096] In one example, the second resin part 80 is made of a light-shielding resin material. In one example, the second resin part 80 is made of a resin material having a higher light reflectance than the first resin part 70. In one example, the second resin part 80 is made of a reflective material. In the fourth embodiment, the second resin part 80 is made of a white resin material. As the white resin material, for example, an epoxy resin mixed with titanium oxide or silica may be used.

[0097] According to this configuration, the laser light emitted in the Z direction from the element surface 21 of the surface-emitting laser element 20 is reflected by the second resin portion 80. The light-receiving element 90 can receive a portion of the light reflected by the second resin portion 80.

[0098] The light receiving element 90 receives a part of the laser light emitted from the surface-emitting laser element 20. Therefore, the semiconductor light emitting device 10 can monitor the state of the surface-emitting laser element 20 by the light receiving element 90. The semiconductor light emitting device 10 can use so-called APC (Auto Power Control) driving, which controls the current supplied to the surface-emitting laser element 20 so that the optical output of the laser light of the surface-emitting laser element 20 is constant. More specifically, a control device provided outside the semiconductor light emitting device 10 and controlling the current supplied to the surface-emitting laser element 20 receives a signal corresponding to the reflected light of the laser light of the surface-emitting laser element 20 received by the light receiving element 90, by the second resin part 80. The control device receives the signal of the light receiving element 90 by being electrically connected to the third terminal 60C. The control device controls the current supplied to the surface-emitting laser element 20 according to the difference between the received signal and an output setting value that becomes a preset optical output. In one example, the control device controls the current supplied to the surface-emitting laser element 20 so that the level of the received signal matches the output setting value.

[0099] [Effects of the fourth embodiment] According to the semiconductor light emitting device 10 of the fourth embodiment, the following effects can be obtained. (4-1) The semiconductor light emitting device 10 includes a light receiving element 90 disposed apart from the surface emitting laser element 20 in the X direction. The light receiving element 90 receives the laser light from the surface emitting laser element 20.

[0100] According to this configuration, the optical output of the laser light emitted by the surface-emitting laser element 20 can be grasped based on the laser light received by the light-receiving element 90. Therefore, the optical output of the laser light emitted by the surface-emitting laser element 20 can be controlled.

[0101] (4-2) A plurality of light-emitting portions 24 and a surface electrode 27 are formed spaced apart from each other in the X direction on the element surface 21 of the surface-emitting laser element 20. The light-receiving element 90 is disposed on the opposite side of the surface electrode 27 to the plurality of light-emitting portions 24 in the X direction.

[0102] According to this configuration, it is possible to shorten the distance in the X direction between the multiple light-emitting portions 24 of the surface-emitting laser element 20 and the light-receiving element 90. Therefore, it becomes easier for the light-receiving element 90 to receive the laser light emitted from the element surface 21 of the surface-emitting laser element 20.

[0103] <Modification of the fourth embodiment> The semiconductor light emitting device 10 of the fourth embodiment may be modified, for example, as follows. The configuration of the first resin portion 70 can be changed as desired. In one example, the diffusion material 72 may be omitted from the first resin portion 70.

[0104] The configuration of the second resin portion 80 can be changed arbitrarily. The semiconductor light emitting device 10 of this modification will be described with reference to Figs. 16 to 19. Fig. 16 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 of the first modification of the fourth embodiment, cut at the same position as the line F3-F3 in Fig. 2. Fig. 17 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 of the second modification of the fourth embodiment, cut at the same position as the line F3-F3 in Fig. 2. Fig. 18 shows a schematic planar structure of the semiconductor light emitting device 10 of the third modification of the fourth embodiment. Fig. 19 shows a schematic cross-sectional structure of the semiconductor light emitting device 10 of the third modification, cut at the line F19-F19 in Fig. 18.

[0105] 16, in the semiconductor light emitting device 10 of the first modification, the first resin portion 70 includes a plurality of first diffusing materials 72A. The first diffusing materials 72A are the same as the diffusing material 72 of the fourth embodiment. For this reason, it can be said that the first resin portion 70 of the semiconductor light emitting device 10 of the first modification has the same configuration as the first resin portion 70 of the fourth embodiment.

[0106] The arrangement position, shape, and size of the second resin part 80 are the same as those of the fourth embodiment. Meanwhile, the second resin part 80 is made of a translucent resin material as in the third embodiment. In one example, the second resin part 80 is made of a transparent resin material. In the first modified example, the resin material of the second resin part 80 is the same as the resin material of the first resin part 70. Also, the second resin part 80 includes a second diffusion material 82 as in the third embodiment. The configuration and size of the second diffusion material 82 are the same as those of the second diffusion material 82 of the third embodiment, for example. In the example shown in FIG. 16, the compounding ratio of the plurality of first diffusion materials 72A to the first resin part 70 and the compounding ratio of the plurality of second diffusion materials 82 to the second resin part 80 are different from each other. Specifically, the concentration of the second diffusion material 82 in the second resin part 80 is higher than the concentration of the first diffusion material 72A in the first resin part 70. In one example, the weight percent concentration of the second diffusing material 82 in the second resin portion 80 is higher than the weight percent concentration of the first diffusing material 72A in the first resin portion 70.

[0107] The laser light emitted from the surface-emitting laser element 20 is diffused by the first diffusing material 72A of the first resin portion 70. The laser light incident on the second resin portion 80 from the first resin portion 70 is diffused by the second diffusing material 82 of the second resin portion 80. This makes it possible to increase the spread angle of the laser light emitted from the semiconductor light emitting device 10.

[0108] 17, in the semiconductor light emitting device 10 of the second modified example, the second resin part 80 covers the entire first resin surface 71 of the first resin part 70. Therefore, the second resin part 80 covers the part of the peripheral wall inner side surface 52 of the peripheral wall 50 that protrudes from the first resin part 70.

[0109] The second resin portion 80 is made of a translucent resin material. In one example, the second resin portion 80 is made of a transparent resin material. In a second modified example, the resin material of the second resin portion 80 is the same as the resin material of the first resin portion 70.

[0110] The second resin portion 80 includes a plurality of second diffusing materials 82. The plurality of second diffusing materials 82 are dispersed in the second resin portion 80 as fine particles that diffuse light. The second diffusing materials 82 diffuse light inside the second resin portion 80 by reflecting (scattering) the light at the interface between the resin in the second resin portion 80 and the second diffusing materials 82. The configuration and size of the second diffusing materials 82 are the same as those of the second diffusing materials 82 in the modified example of the second embodiment shown in FIG. 11, for example. The second diffusing material 82 can increase the spread angle of the laser light emitted from the second resin portion 80 by further diffusing the laser light emitted from the first resin portion 70 inside the second resin portion 80.

[0111] 18 and 19, in the semiconductor light-emitting device 10 of the third modified example, the second resin portion 80 faces at least a part of both the surface-emitting laser element 20 and the light-receiving element 90 in a planar view. The second resin portion 80 is formed so as to cover the entire light-emitting region 25 of the surface-emitting laser element 20 in a planar view. In other words, the second resin portion 80 is formed so as to face all of the plurality of light-emitting portions 24 in a planar view. The second resin portion 80 partially covers the light-receiving surface 91 of the light-receiving element 90 in a planar view.

[0112] In the example shown in FIG. 19, the second resin portion 80 is made of a light-shielding resin material. In one example, the second resin portion 80 is made of a resin material having a higher light reflectance than the first resin portion 70. That is, the second resin portion 80 is made of a reflective material. In the first embodiment, the second resin portion 80 is made of a white resin material. For example, an epoxy resin mixed with titanium oxide or silica may be used as the white resin material. Note that in the semiconductor light emitting device 10 of the third modified example, the diffusing material 72 may be omitted from the first resin portion 70.

[0113] The configuration of the multiple terminals 60 can be changed as desired. In one example, the multiple terminals 60 may include first to fourth terminals. The first terminal is a terminal on which the surface-emitting laser element 20 is mounted. The first terminal is electrically connected to the back electrode 28 of the surface-emitting laser element 20. The second terminal is a terminal on which the light-receiving element 90 is mounted. The second terminal is electrically connected to the back electrode 96 of the light-receiving element 90. The third terminal is a terminal electrically connected to the front electrode 27 of the surface-emitting laser element 20 via the first wire W1. The fourth terminal is a terminal electrically connected to the front electrode 95 of the light-receiving element 90 via the second wire W2. In another example, the multiple terminals 60 may include a first terminal on which the surface-emitting laser element 20 is mounted, a second terminal on which the light-receiving element 90 is mounted, and a third terminal to which both the first wire W1 and the second wire W2 are connected.

[0114] <Modifications common to each embodiment and the modifications of each embodiment> The above-described embodiments can be modified as follows. The following modifications can be combined with each other as long as they are not technically inconsistent.

[0115] The resin material of the first resin portion 70 and the resin material of the second resin portion 80 may be different from each other. The shape of the second resin surface 81 of the second resin part 80 covering the entire first resin surface 71 of the first resin part 70 can be changed as desired. In one example, the second resin surface 81 may be curved so as to be convex toward the side away from the first resin surface 71 in the Z direction.

[0116] In the semiconductor light emitting device 10 including the first resin portion 70 including the first diffusing material 72A and the second resin portion 80 including the second diffusing material 82, the particle size of the first diffusing material 72A and the particle size of the second diffusing material 82 can be changed arbitrarily. In one example, as shown in FIG. 20, the particle size of the second diffusing material 82 is smaller than the particle size of the first diffusing material 72A. In the example shown in FIG. 20, the compounding ratio of the plurality of first diffusing materials 72A to the first resin portion 70 and the compounding ratio of the plurality of second diffusing materials 82 to the second resin portion 80 are different from each other. Specifically, the concentration of the second diffusing material 82 in the second resin portion 80 is higher than the concentration of the first diffusing material 72A in the first resin portion 70. In one example, the weight percent concentration of the second diffusing material 82 in the second resin portion 80 is higher than the weight percent concentration of the first diffusing material 72A in the first resin portion 70.

[0117] The positional relationship between the second resin part 80 and the surface-emitting laser element 20 can be changed as desired. In one example, the second resin part 80 may be disposed at a position that does not face a part of the light-emitting part 24 of the surface-emitting laser element 20 in the Z direction.

[0118] The relationship between the concentration of the first diffusing material 72A in the first resin portion 70 and the concentration of the second diffusing material 82 in the second resin portion 80 can be changed as desired. In one example, the concentration of the second diffusing material 82 in the second resin portion 80 may be lower than the concentration of the first diffusing material 72A in the first resin portion 70. In another example, the concentration of the second diffusing material 82 in the second resin portion 80 may be equal to the concentration of the first diffusing material 72A in the first resin portion 70.

[0119] The particle size of the second diffusion material 82 of the second resin portion 80 may be larger than the particle size of the first diffusion material 72A of the first resin portion 70. The first diffusion material 72A of the first resin portion 70 and the second diffusion material 82 of the second resin portion 80 may be made of different materials.

[0120] The semiconductor light emitting device 10 may include a reflector 100 that covers at least one of the bottom wall 40 and the peripheral wall 50 in the accommodation space 31 of the element accommodation body 30. In one example, as shown in Fig. 21 , the reflector 100 covers both the bottom wall surface 41 of the bottom wall 40 and the peripheral wall inner side surface 52 of the peripheral wall 50. In the example shown in Fig. 21 , the reflector 100 covers both the element side surface 23 of the surface emitting laser element 20 and the light receiving side surface 93 of the light receiving element 90.

[0121] The reflector 100 is made of a resin material having a higher light reflectance than the first resin portion 70. In one example, the reflector 100 may be made of a resin material having a higher light reflectance than the bottom wall 40 and the peripheral wall 50. In one example, the reflector 100 is made of a white resin material. As the white resin material, for example, an epoxy resin mixed with titanium oxide or silica may be used.

[0122] The reflector 100 includes a surface 101. The surface 101 of the reflector 100 includes a curved concave shape formed so as to face the peripheral wall surface 51 as it moves from the surface-emitting laser element 20 toward the peripheral wall 50. The surface 101 also includes a curved concave shape formed so as to face the peripheral wall surface 51 as it moves from the light-receiving element 90 toward the peripheral wall 50. The surface 101 of the reflector 100 provided between the surface-emitting laser element 20 and the light-receiving element 90 also includes a curved concave shape.

[0123] The first resin part 70 is provided on the surface 101 of the reflector 100. In the example shown in Fig. 21, the first resin part 70 is formed over the entire surface 101 of the reflector 100. The first resin part 70 covers both the element surface 21 of the surface-emitting laser element 20 and the light-receiving surface 91 of the light-receiving element 90. The first resin part 70 includes a first diffusing material 72A. The first diffusing material 72A is the same as the diffusing material 72 of the fourth embodiment, for example.

[0124] The arrangement position, shape, and size of the second resin part 80 are the same as those of the fourth embodiment. Meanwhile, the second resin part 80 is made of a translucent resin material. In one example, the second resin part 80 is made of a transparent resin material. The resin material of the second resin part 80 is the same as the resin material of the first resin part 70. In addition, the second resin part 80 includes a second diffusion material 82. The configuration and size of the second diffusion material 82 are the same as those of the second diffusion material 82 of the third embodiment, for example. In the example shown in FIG. 21, the compounding ratio of the plurality of first diffusion materials 72A to the first resin part 70 and the compounding ratio of the plurality of second diffusion materials 82 to the second resin part 80 are different from each other. Specifically, the concentration of the second diffusion material 82 in the second resin part 80 is higher than the concentration of the first diffusion material 72A in the first resin part 70. In one example, the weight percent concentration of the second diffusing material 82 in the second resin portion 80 is higher than the weight percent concentration of the first diffusing material 72A in the first resin portion 70.

[0125] The second resin portion 80 may be made of a reflective material like the second resin portion 80 of the fourth embodiment. In one example, the second resin portion 80 is made of a white resin material. For example, an epoxy resin mixed with titanium oxide or silica may be used as the white resin material.

[0126] The reflector 100 may be configured to cover the bottom wall 40 but not cover the peripheral wall 50. In this case, the peripheral wall 50 is covered by, for example, the first resin portion 70. The reflector 100 may be configured to cover the peripheral wall 50 but not cover the bottom wall 40. In this case, the bottom wall 40 is covered by, for example, the first resin portion 70.

[0127] The reflector 100 may be configured to partially cover the element side surface 23 of the surface-emitting laser element 20. The element side surface 23 that is not covered by the reflector 100 is covered by the first resin portion 70. The reflector 100 may be configured not to cover the element side surface 23 of the surface-emitting laser element 20. In this case, the element side surface 23 is covered by the first resin portion 70. The reflector 100 may be configured to partially cover the light-receiving side surface 93 of the light-receiving element 90. The light-receiving side surface 93 that is not covered by the reflector 100 is covered by the first resin portion 70. The reflector 100 may be configured not to cover the light-receiving side surface 93 of the light-receiving element 90. In this case, the light-receiving side surface 93 is covered by the first resin portion 70.

[0128] The configuration of the element container 30 can be changed arbitrarily. In one example, the bottom wall 40 and the peripheral wall 50 may be provided separately. In this case, the bottom wall 40 and the peripheral wall 50 are fixed to each other by an adhesive. The semiconductor light emitting device 10 may include a substrate as the bottom wall 40 of the element container 30, and a case as the peripheral wall 50 provided on the substrate. The surface emitting laser element 20 is mounted on the substrate. In a plan view, the case is formed so as to surround the surface emitting laser element 20. When the semiconductor light emitting device 10 includes a light receiving element 90, the light receiving element 90 is mounted on the substrate. In a plan view, the case is formed so as to surround both the surface emitting laser element 20 and the light receiving element 90.

[0129] The semiconductor light emitting device 10 may include a plurality of surface electrodes provided on the bottom wall surface 41 of the bottom wall 40, instead of the plurality of terminals 60. In one example, the plurality of surface electrodes include a first surface electrode and a second surface electrode. The first surface electrode is an electrode on which the surface emitting laser element 20 is mounted. Therefore, the first surface electrode is electrically connected to the back electrode 28 of the surface emitting laser element 20. The second surface electrode is an electrode electrically connected to the surface electrode 27 of the surface emitting laser element 20 via a wire WR. When the semiconductor light emitting device 10 includes a light receiving element 90, the plurality of surface electrodes may include first to third surface electrodes. The first surface electrode is an electrode on which both the surface emitting laser element 20 and the light receiving element 90 are mounted. Therefore, the first surface electrode is electrically connected to both the back electrode 28 of the surface emitting laser element 20 and the back electrode 96 of the light receiving element 90. The second surface electrode is an electrode electrically connected to the surface electrode 27 of the surface emitting laser element 20 via a first wire W1. The third surface electrode is an electrode electrically connected to the surface electrode 95 of the light receiving element 90 via the second wire W2.

[0130] One or more of the various examples described in this specification may be combined to the extent that they are not technically inconsistent. The term "on" as used in this disclosure includes the meanings "on" and "above" unless the context clearly indicates otherwise. Thus, for example, the expression "a first element is disposed on a second element" is intended to mean that in some embodiments, the first element may be disposed directly on the second element in contact with the second element, while in other embodiments, the first element may be disposed above the second element without contacting the second element. In other words, the term "on" does not exclude a structure in which another element is formed between the first element and the second element.

[0131] The Z direction used in this disclosure does not necessarily have to be a vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to this disclosure are not limited to the "up" and "down" of the Z direction described in this specification being "up" and "down" of the vertical direction. For example, the X direction may be a vertical direction, or the Y direction may be a vertical direction.

[0132] <Additional Notes> The technical ideas that can be understood from this disclosure are described below. Note that, for the purpose of aiding understanding, not for the purpose of limitation, the components described in the appendices are given the reference numbers of the corresponding components in the above embodiment. The reference numbers are shown as examples to aid understanding, and the components described in each appendix should not be limited to the components indicated by the reference numbers.

[0133] [Appendix 1] a surface-emitting laser element (20) including an element surface (21) from which laser light is emitted; a first light-transmitting resin portion (70) for sealing the surface-emitting laser element (20), the first resin portion (70) having a first resin surface (71); a second resin portion (80) different from the first resin portion (70), at least a portion of which is formed on the first resin surface (71) facing the element surface (21) in a direction (Z direction) perpendicular to the element surface (21); A semiconductor light emitting device (10).

[0134] [Appendix 2] The second resin portion (80) has a higher light reflectance than the first resin portion (70). 2. The semiconductor light emitting device of claim 1.

[0135] [Appendix 3] The first resin surface (71) is curved so as to be concave toward the surface-emitting laser element (20). 3. The semiconductor light emitting device according to claim 1 or 2.

[0136] [Appendix 4] The first resin portion (70) includes a diffusion material (72). 4. The semiconductor light emitting device according to claim 1.

[0137] [Appendix 5] The first resin portion (70) includes a first diffusion material (72A), The second resin portion (80) includes a second diffusion material (82), The concentration of the second diffusion material (82) in the second resin portion (80) is higher than the concentration of the first diffusion material (72A) in the first resin portion (70). 4. The semiconductor light emitting device according to claim 1.

[0138] [Appendix 6] The first resin portion (70) includes a first diffusion material (72A), The second resin portion (80) includes a second diffusion material (82), The particle size of the second diffusion material (82) is smaller than the particle size of the first diffusion material (72A). 4. The semiconductor light emitting device according to claim 1.

[0139] [Appendix 7] The concentration of the second diffusion material (82) in the second resin portion (80) is higher than the concentration of the first diffusion material (72A) in the first resin portion (70). 7. The semiconductor light emitting device according to claim 6.

[0140] [Appendix 8] The second resin portion (80) covers the entire first resin surface (71). 8. The semiconductor light emitting device according to claim 5, wherein the first and second electrodes are arranged in a first direction.

[0141] [Appendix 9] The second resin portion (80) is made of a reflective material. 8. The semiconductor light emitting device according to claim 1.

[0142] [Appendix 10] The second resin portion (80) is made of a white resin material as the reflective material. 10. The semiconductor light emitting device of claim 9.

[0143] [Appendix 11] The second resin portion (80) is selectively provided on the first resin surface (71). 11. The semiconductor light emitting device according to claim 9 or 10.

[0144] [Appendix 12] The second resin portion (80) is provided at a position spaced apart from the outer circumferential edge of the first resin surface (71). 12. The semiconductor light emitting device of claim 11.

[0145] [Appendix 13] The second resin portion (80) has a second resin surface (81), The second resin surface (81) is curved so as to be convex toward the side away from the first resin surface (71) in a direction (Z direction) perpendicular to the element surface (21). 13. The semiconductor light emitting device according to any one of claims 1 to 12.

[0146] [Appendix 14] The surface-emitting laser element (20) includes a plurality of light-emitting portions (24) provided on a surface (21) of the element, The second resin portion (80) faces all of the plurality of light emitting portions (24) when viewed in a direction (Z direction) perpendicular to the element surface (21). 14. The semiconductor light emitting device according to claim 1,

[0147] [Appendix 15] a light receiving element (90) arranged apart from the surface-emitting laser element (20) in a first direction (X direction) intersecting a direction (Z direction) perpendicular to the element surface (21) and configured to receive laser light from the surface-emitting laser element (20); 15. The semiconductor light emitting device according to any one of claims 1 to 14.

[0148] [Appendix 16] The first resin portion (70) seals both the surface-emitting laser element (20) and the light-receiving element (90). 16. The semiconductor light emitting device of claim 15.

[0149] [Appendix 17] The second resin portion (80) faces at least a part of both the surface-emitting laser element (20) and the light-receiving element (90) when viewed in a direction (Z direction) perpendicular to the element surface (21). 17. The semiconductor light emitting device according to claim 15 or 16.

[0150] [Appendix 18] an element container (30) including a bottom wall (40) on which the surface-emitting laser element (20) is arranged, and a peripheral wall (50) surrounding the surface-emitting laser element (20) when viewed from a direction perpendicular to the element surface (21) (Z direction), the bottom wall (40) and the peripheral wall (50) configuring a container space (31) that contains the surface-emitting laser element (20) and is open on the same side as the element surface (21); The first resin portion (70) is in contact with both the bottom wall (40) and the peripheral wall (50). 18. The semiconductor light emitting device according to claim 1.

[0151] [Appendix 19] A terminal (60) is provided so as to penetrate the bottom wall (40), The terminal (60) is a terminal surface (61) on which the surface-emitting laser element (20) is mounted; a terminal back surface (62) facing the opposite side to the terminal front surface (61) and exposed from the bottom wall (40); Includes 19. The semiconductor light emitting device of claim 18.

[0152] The above description is merely illustrative. Those skilled in the art may recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of describing the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and alterations that fall within the scope of the present disclosure, including the scope of the claims. [Explanation of symbols]

[0153] 10...Semiconductor light-emitting device 20... Surface emitting laser element 21...Element surface 22…Back side of element 23...Side of element 24…Light emitting part 25…Light emitting area 26... Element substrate 27…Surface electrode 28…Back electrode 30...Element container 31…Containment space 40…Bottom wall 41…Bottom wall surface 42…Bottom wall back 43…Bottom wall side 50...Peripheral wall 51…Surrounding wall surface 52…Inner side of peripheral wall 53…Outer surface of peripheral wall 60…Terminal 60A…First terminal 60B…2nd terminal 60C…3rd terminal 61…Terminal surface 62…Terminal back side 70…First resin part 71…First resin surface 72...Diffusion material 72A…First diffusion material 80…Second resin part 81…Second resin surface 82…Second diffusion material 90...Photo-detector 91…Light receiving surface 92…Light receiving back side 93…Light receiving side 94…Light receiving area 95…Surface electrode 96…Back electrode 100...Reflector 101…Surface WR…Wire W1…First wire W2…Second wire SD: Conductive adhesive CA: Center of the second resin part CB: Center of element housing

Claims

1. a surface-emitting laser element including an element surface from which laser light is emitted; a first resin portion for sealing the surface-emitting laser element and having a first resin surface; a second resin portion different from the first resin portion, the second resin portion being at least partially formed on the first resin surface facing the element surface in a direction perpendicular to the element surface; A semiconductor light emitting device comprising:

2. The second resin portion has a higher light reflectance than the first resin portion. The semiconductor light emitting device according to claim 1 .

3. The first resin surface is curved so as to be concave toward the surface-emitting laser element. The semiconductor light emitting device according to claim 1 .

4. The first resin portion includes a diffusion material. The semiconductor light emitting device according to claim 1 .

5. the first resin portion includes a first diffusion material, the second resin portion includes a second diffusion material, The concentration of the second diffusing material in the second resin portion is higher than the concentration of the first diffusing material in the first resin portion. The semiconductor light emitting device according to claim 1 .

6. the first resin portion includes a first diffusion material, the second resin portion includes a second diffusion material, The particle size of the second diffusion material is smaller than the particle size of the first diffusion material. The semiconductor light emitting device according to claim 1 .

7. The concentration of the second diffusing material in the second resin portion is higher than the concentration of the first diffusing material in the first resin portion. The semiconductor light emitting device according to claim 6 .

8. The second resin portion covers the entire surface of the first resin portion. The semiconductor light emitting device according to claim 5 .

9. The second resin portion is made of a reflective material. The semiconductor light emitting device according to claim 1 .

10. The second resin portion is made of a white resin material serving as the reflective material. The semiconductor light emitting device according to claim 9 .

11. The second resin portion is selectively provided on a surface of the first resin portion. The semiconductor light emitting device according to claim 9 .

12. The second resin portion is provided at a position spaced apart from an outer circumferential edge of the first resin surface. The semiconductor light emitting device according to claim 11.

13. the second resin portion has a second resin surface, The second resin surface is curved so as to be convex toward a side away from the first resin surface in a direction perpendicular to the element surface. The semiconductor light emitting device according to claim 1 .

14. the surface-emitting laser element includes a plurality of light-emitting portions provided on a surface of the element, The second resin portion faces all of the plurality of light emitting portions when viewed from a direction perpendicular to the element surface. The semiconductor light emitting device according to claim 1 .

15. a light receiving element arranged apart from the surface-emitting laser element in a first direction intersecting a direction perpendicular to the surface of the element, and configured to receive laser light from the surface-emitting laser element; The semiconductor light emitting device according to claim 1 .

16. The first resin portion seals both the surface emitting laser element and the light receiving element. The semiconductor light emitting device according to claim 15.

17. The second resin portion faces at least a part of both the surface-emitting laser element and the light-receiving element when viewed from a direction perpendicular to the element surface. The semiconductor light emitting device according to claim 15.

18. an element container including a bottom wall on which the surface-emitting laser element is disposed and a peripheral wall surrounding the surface-emitting laser element when viewed from a direction perpendicular to the element surface, the bottom wall and the peripheral wall forming a container space that contains the surface-emitting laser element and is open on the same side as the element surface; The first resin portion is in contact with both the bottom wall and the peripheral wall. The semiconductor light emitting device according to any one of claims 1 to 17.

19. A terminal is provided to penetrate the bottom wall, The terminal is a terminal surface on which the surface-emitting laser element is mounted; a rear surface of the terminal facing away from the front surface of the terminal and exposed from the bottom wall; Includes 20. The semiconductor light emitting device according to claim 18.

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