Manufacturing method for vibration device

Abstract

To provide a manufacturing method for a vibration device, capable of improving reliability.SOLUTION: A manufacturing method for a vibration device includes the steps of: preparing a base 10A including a semiconductor substrate 11 having a first surface 11a and a second surface 11b, in which a circuit element 11a1 is formed on the first surface 11a, and a first insulating layer 12 disposed on the first surface 11a of the semiconductor substrate 11 and covering the circuit element 11a1; forming a second insulating layer 13 by depositing an insulator on a fifth surface 10Aa of the first insulating layer 12 on the opposite side of the base 10A; flattening, by polishing, at least a part of a third surface 10a of the second insulating layer 13 on the opposite side of the base 10A; forming a mount electrode 16 on the polished third surface 10a of the second insulating layer 13; and bonding a vibration element 40 to the mount electrode 16.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing a vibration device. [Background technology]

[0002] Patent Document 1 discloses a method for manufacturing a vibration device in which a vibration element is bonded to a base substrate on which an integrated circuit is formed. An insulating layer including a plurality of wiring layers is formed on the upper surface of the base substrate, and a vibration element electrically connected to the wiring layer is formed on the insulating layer. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-057755 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the configuration of Patent Document 1, the surface of the insulating layer including the multiple wiring layers has poor flatness, so that when the vibration element is mounted on the surface of the insulating layer, there is a problem that the vibration element and the wiring layer are not stably bonded to each other. [Means for solving the problem]

[0005] A method for manufacturing a vibration device includes the steps of: preparing a base including a semiconductor substrate having a first surface and a second surface, the semiconductor substrate having a circuit element formed on the first surface; and a first insulating layer disposed on the first surface of the semiconductor substrate and covering the circuit element; depositing an insulator on a surface of the first insulating layer opposite the semiconductor substrate to form a second insulating layer; polishing and planarizing at least a portion of a surface of the second insulating layer opposite the base; forming a mount electrode on the polished surface of the second insulating layer; and joining a vibration element to the mount electrode. [Brief description of the drawings]

[0006] [Figure 1] FIG. 2 is a perspective view showing a configuration of a vibration device. [Diagram 2] FIG. 2 is a plan view showing a configuration of a vibration device. [Diagram 3] 3 is a cross-sectional view of the vibration device shown in FIG. 2 taken along line AA. [Figure 4A] 1A to 1C are cross-sectional views illustrating a method for manufacturing a vibration device. [Figure 4B] 1A to 1C are cross-sectional views illustrating a method for manufacturing a vibration device. [Figure 4C] 1A to 1C are cross-sectional views illustrating a method for manufacturing a vibration device. [Figure 4D] 1A to 1C are cross-sectional views illustrating a method for manufacturing a vibration device. [Figure 4E] 1A to 1C are cross-sectional views illustrating a method for manufacturing a vibration device. [Figure 4F] 1A to 1C are cross-sectional views illustrating a method for manufacturing a vibration device. [Figure 4G] 1A to 1C are cross-sectional views illustrating a method for manufacturing a vibration device. [Figure 4H] 1A to 1C are cross-sectional views illustrating a method for manufacturing a vibration device. [Figure 4I] 1A to 1C are cross-sectional views illustrating a method for manufacturing a vibration device. [Figure 4J] 1A to 1C are cross-sectional views illustrating a method for manufacturing a vibration device. [Figure 4K] 1A to 1C are cross-sectional views illustrating a method for manufacturing a vibration device. [Figure 5A] 10A to 10C are cross-sectional views showing a method for manufacturing a vibration device according to a modified example. [Figure 5B] 10A to 10C are cross-sectional views showing a method for manufacturing a vibration device according to a modified example. [Figure 5C] 10A to 10C are cross-sectional views showing a method for manufacturing a vibration device according to a modified example. [Figure 5D] 10A to 10C are cross-sectional views showing a method for manufacturing a vibration device according to a modified example. [Figure 5E] 10A to 10C are cross-sectional views showing a method for manufacturing a vibration device according to a modified example. [Figure 5F] 10A to 10C are cross-sectional views showing a method for manufacturing a vibration device according to a modified example. [Figure 5G] 10A to 10C are cross-sectional views showing a method for manufacturing a vibration device according to a modified example. [Figure 5H]10A to 10C are cross-sectional views showing a method for manufacturing a vibration device according to a modified example. [Figure 5I] 10A to 10C are cross-sectional views showing a method for manufacturing a vibration device according to a modified example. [Figure 5J] 10A to 10C are cross-sectional views showing a method for manufacturing a vibration device according to a modified example. [Figure 5K] 10A to 10C are cross-sectional views showing a method for manufacturing a vibration device according to a modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] In the following figures, the three mutually orthogonal axes are described as the X-axis, Y-axis, and Z-axis. The direction along the X-axis is the "X-direction", the direction along the Y-axis is the "Y-direction", and the direction along the Z-axis is the "Z-direction", with the arrow direction being the + direction and the direction opposite to the + direction being the - direction. The +Z direction is sometimes called "upper" or "upper side" or "front side", and the -Z direction is sometimes called "lower" or "lower side" or "rear side", and the view from the +Z direction and -Z direction is also called a planar view or planar. The surface on the +Z side is described as the "upper surface" or "front side", and the surface on the opposite side of the -Z side is described as the "lower surface" or "rear side".

[0008] First, the configuration of a vibration device 100 will be described with reference to Figures 1 to 3. Note that, for the sake of convenience in describing the internal configuration, the vibration device 100 shown in Figure 2 is illustrated in a state in which the lid 20 is removed.

[0009] As shown in Figures 1 and 2, the vibration device 100 includes a base 10, a lid body 20 arranged on the base 10, a bonding layer 30 that bonds the base 10 and the lid body 20, and a vibration element 40 (see Figure 3) mounted on the base 10.

[0010] 2, the bonding layer 30 is formed in a frame shape in a region surrounding the vibration element 40, in other words, bonding the base 10 and the lid 20. The bonding layer 30 is bonded by surface activation bonding using gold (Au), for example. Note that the bonding material is not limited to gold (Au), and copper (Cu), aluminum (Al), etc. may also be used.

[0011] 3, the base 10 includes a base 10A and a second insulating layer 13. The base 10A includes a semiconductor substrate 11 and a first insulating layer 12.

[0012] The semiconductor substrate 11 has a first surface 11a and a second surface 11b opposite to the first surface 11a. The base 10 has a third surface 10a and a fourth surface 10b opposite to the third surface 10a. The base 10A has a fifth surface 10Aa and a fourth surface 10Ab opposite to the fifth surface 10Aa.

[0013] The semiconductor substrate 11 is, for example, a silicon substrate. On a first surface 11a of the semiconductor substrate 11, circuit elements 11a1 including transistors and the like are formed.

[0014] The circuit element 11a1 is, for example, a circuit in which a plurality of active elements, such as transistors (not shown), are electrically connected by wiring. The circuit element 11a1 oscillates the vibration element 40. The circuit element 11a1 may be, for example, a temperature compensation circuit that corrects the vibration characteristics of the vibration element 40 in response to temperature changes.

[0015] A first insulating layer 12 is disposed on the first surface 11a of the semiconductor substrate 11 so as to cover the circuit element 11a1. A plurality of wiring layers (not shown) are provided on the first insulating layer 12. The base 10 is covered with the first insulating layer 12, and the base 10 is provided with pad electrodes 14a electrically connected to the circuit element 11a1.

[0016] A second insulating layer 13 made of an oxide is formed on the base 10A, i.e., on a fifth surface 10Aa of the base 10A. A third surface 10a of the second insulating layer 13 opposite the base 10A is flattened by polishing.

[0017] The first insulating layer 12 and the second insulating layer 13 may be made of, for example, SiO2 (silicon oxide). Note that the material is not limited to SiO2 (silicon oxide) and may be SiN (silicon nitride) or other materials.

[0018] A metal pattern 15A is formed on the second insulating layer 13. The metal pattern 15A has a mount electrode 16, a contact electrode 17 provided in an opening 17a formed in the first insulating layer 12 and the second insulating layer 13, the opening 17a overlapping the pad electrode 14a in a plan view, and wiring 15 connecting the mount electrode 16 and the contact electrode 17.

[0019] The wiring 15 is, for example, a laminated film of a TiW (titanium tungsten) film 15a and an Au (gold) film 15b. Note that a Ti (titanium) film may be used instead of the TiW film 15a.

[0020] The mount electrode 16 is electrically connected to the circuit element 11a1 via the wiring 15, the contact electrode 17, and the pad electrode 14a. The circuit element 11a1 is electrically connected to one of the external connection terminals 71, 72 disposed on the fourth surface 10b of the base 10 via the through electrode 50.

[0021] Specifically, the external connection terminals 71 and 72 include a power supply external terminal, a ground external terminal, and an oscillation output external terminal electrically connected to the circuit element 11a1. With this configuration, the circuit element 11a1 is driven by a power supply supplied from the outside via the power supply external terminal, oscillates the vibration element 40 to generate an oscillation signal, and outputs the oscillation signal to the outside via the oscillation output external terminal.

[0022] The vibration element 40 includes an element substrate 41, a first excitation electrode 42 (see FIG. 2) arranged on one surface of the element substrate 41, and a second excitation electrode 43 (see FIG. 2) arranged on the other surface of the element substrate 41.

[0023] Examples of materials that can be used for the first excitation electrode 42 and the second excitation electrode 43 include metal materials such as gold (Au), silver (Ag), platinum (Pt), palladium (Pd), iridium (Ir), copper (Cu), aluminum (Al), nickel (Ni), chromium (Cr), titanium (Ti), and tungsten (W), as well as alloys containing these metal materials.

[0024] In this way, when forming the vibration element 40, the base 10, in other words, the third surface 10a of the second insulating layer 13 is flattened before the mount electrode 16 is formed, making it possible to stably join the mount electrode 16 and the circuit element 11a1, and as a result, the circuit element 11a1 and the vibration element 40 can be electrically connected in a stable state.

[0025] A mount electrode 16 is provided on the third surface 10a of the base 10. The mount electrode 16 is electrically connected to the vibration element 40 via a metal bump 18. The vibration element 40 is fixed to the third surface 10a of the base 10 by being bonded by the metal bump 18. The metal bump 18 may be a microbump, a stud bump, or the like.

[0026] The lid body 20 is, for example, made of a silicon substrate, and is a box-shaped container having a recess 21 for forming a cavity S as a storage space. The vibration element 40 is accommodated in the recess 21 of the lid body 20 by bonding the base 10 and the lid body 20 via a bonding layer 30. That is, the vibration element 40 is hermetically sealed in the space surrounded by the base 10 and the lid body 20. The hermetically sealed space is referred to as a cavity S.

[0027] Next, a method for manufacturing the vibration device 100 will be described with reference to FIGS. 4A to 4K.

[0028] First, in the step shown in FIG. 4A, a base 10A is prepared. Specifically, first, a circuit element 11a1 including a transistor and the like is formed on a semiconductor substrate 11. Next, a first insulating layer 12 including an insulating layer, a wiring layer, and pad electrodes 14a and 14b is formed on the semiconductor substrate 11. The first insulating layer 12 is formed by, for example, a chemical vapor deposition (CVD) method. Alternatively, it may be formed by a sputtering method. After that, an opening 12a is formed on the pad electrode 14a by using photolithography and etching techniques.

[0029] Next, in the step shown in FIG. 4B, the second insulating layer 13 is formed. Specifically, the second insulating layer 13 is formed by depositing an oxide as an insulator using a CVD method, for example, on the surface of the first insulating layer 12 having the opening 12a opposite to the semiconductor substrate 11, in other words, on the fifth surface 10Aa of the base 10A, in the same manner as the first insulating layer 12. The second insulating layer 13 may also be formed using a sputtering method. The surface of the second insulating layer 13, i.e., the third surface 10a, is uneven because a wiring layer and the like are laminated below.

[0030] Furthermore, by depositing the second insulating layer 13 using, for example, a CVD method, the gas used can easily penetrate and the layer can be formed strongly and uniformly.

[0031] Next, in the step shown in FIG. 4C, the third surface 10a of the second insulating layer 13 is planarized. Specifically, the third surface 10a of the second insulating layer 13 opposite the base 10A is planarized, for example, by CMP (Chemical Mechanical Polishing). As a result, the uneven third surface 10a of the second insulating layer 13 becomes flat. In addition, since the planarization is performed by the CMP method, the third surface 10a of the second insulating layer 13 can be planarized with high accuracy relatively easily.

[0032] 4D, the opening 17a is formed. Specifically, the opening 17a is formed in a region of the second insulating layer 13 that overlaps with the pad electrode 14a in a plan view by using, for example, photolithography and etching techniques. As a result, a part of the pad electrode 14a is exposed.

[0033] 4E and 4F, a metal pattern 15A including a mount electrode 16 is formed. Specifically, first, as shown in Fig. 4E, a resin layer 51 is formed on a portion of the second insulating layer 13 that will become the mount electrode 16. The resin layer 51 is selectively formed, for example, by using a coating method.

[0034] Next, a TiW film 15a is formed on the second insulating layer 13 including the opening 17a and the resin layer 51, for example, by using a sputtering method. Thereafter, a first-layer metal pattern 15A1 is formed by using a photolithography technique and an etching technique. As a result, a part of the mount electrode 16, a part of the wiring 15, and a part of the contact electrode 17 are formed.

[0035] Next, as shown in FIG. 4F, an Au film 15b is formed on the second insulating layer 13 on which the metal pattern 15A1 is formed, using a CVD method or the like. Then, a second layer metal pattern 15A2 is formed using a photolithography technique and an etching technique. In addition, a bonding layer 30 is formed. This completes the metal pattern 15A.

[0036] In this way, the mount electrode 16 is formed via the resin layer 51, so that when stress is applied to the mount electrode 16, the stress can be alleviated, and when an impact is applied to the vibration device 100, the impact can be alleviated.

[0037] Next, in the step shown in Fig. 4G, metal bumps 18 are formed. Specifically, metal bumps 18 are formed on mount electrodes 16 using plating. Plating is prone to reflecting the unevenness of the base. However, because the base, second insulating layer 13, is planarized, unevenness is unlikely to occur on the surface of metal bumps 18.

[0038] 4H, the vibration element 40 is bonded to the metal bump 18. Specifically, a first excitation electrode 42 (see FIG. 2) is formed on one side of an element substrate 41 made of a piezoelectric material such as quartz, and a second excitation electrode 43 (see FIG. 2) is formed on the other side of the element substrate 41. Thereafter, the completed vibration element 40 and the metal bump 18 are bonded.

[0039] 4C, the third surface 10a of the second insulating layer 13 is planarized, and thus the mounting electrodes 16 and the metal bumps 18 are formed on the second insulating layer 13, so that the bonding area between the mounting electrodes 16 and the metal bumps 18 is increased, and the connection can be made in an electrically stable state. As a result, the bonding area between the metal bumps 18 and the vibration element 40 is increased, and the vibration element 40 and the circuit element 11a1 can be connected in an electrically stable state.

[0040] Next, in the step shown in Fig. 4I, the base 10 and the lid 20 are bonded together. Specifically, first, a recess 21 is formed in the silicon substrate. Then, a film such as TiW / Au or Ti / Au is laminated by, for example, a sputtering method on the entire surface of the silicon substrate on the side where the recess 21 is provided. In this manner, the lid 20 is completed.

[0041] Next, with the vibration element 40 accommodated in the accommodation space between the base 10 and the lid 20, the bonding layer 30 formed on the polished third surface 10a of the second insulating layer 13 is bonded to the lid 20 by, for example, activation bonding. As a result, the vibration element 40 is hermetically sealed by the base 10 and the lid 20.

[0042] Next, in the step shown in FIG. 4J, a through hole 50a is formed in the base 10A. Specifically, first, the semiconductor substrate 11 is thinned. Then, in the base 10A, the through hole 50a is formed in the region overlapping with the pad electrode 14b in a plan view using photolithography and etching techniques. Then, an insulating layer 52 made of silicon oxide is formed on the surface of the base 10A including the through hole 50a. Next, the insulating layer 52 is etched back to expose the surface of the pad electrode 14b.

[0043] 4K, the resonation device 100 is completed. Specifically, for example, a W (tungsten) film is first embedded in the through hole 50a, and the surface of the insulating layer 52 is patterned. Thereafter, an Au film is formed and patterned so as to cover the exposed W film, thereby completing the external connection terminals 71, 72. In this manner, by forming an Au film on the exposed surfaces of the external connection terminals 71, 72, the external connection terminals 71, 72 can be protected from the external environment.

[0044] Next, the lid body 20 is thinned, and when it is formed of a wafer, for example, it is cut into individual pieces by a cutting method such as dicing, and thus the vibration device 100 is completed.

[0045] As described above, the manufacturing method of the vibration device 100 of this embodiment includes the steps of preparing a base 10A including a semiconductor substrate 11 having a first surface 11a and a second surface 11b, with a circuit element 11a1 formed on the first surface 11a, and a first insulating layer 12 arranged on the first surface 11a of the semiconductor substrate 11 and covering the circuit element 11a1; depositing an insulator on the fifth surface 10Aa side of the first insulating layer 12 opposite the semiconductor substrate 11 to form a second insulating layer 13; polishing and flattening at least a portion of the third surface 10a of the second insulating layer 13 opposite the base 10A; forming a mount electrode 16 on the polished third surface 10a of the second insulating layer 13; and joining the vibration element 40 to the mount electrode 16.

[0046] According to this method, the third surface 10a of the second insulating layer 13 is flattened, so that when the mount electrode 16 and the vibration element 40 are formed on the second insulating layer 13, the bonding area between the mount electrode 16 and the vibration element 40 is increased, and the bonding can be made electrically stable. As a result, the vibration element 40 and the circuit element 11a1 can be electrically connected in a stable state.

[0047] In the method for manufacturing the resonator device 100 of the present embodiment, the planarization step is preferably performed by chemical mechanical polishing. According to this method, since the planarization is performed by chemical mechanical polishing, the third surface 10a of the second insulating layer 13 can be planarized with high accuracy relatively easily.

[0048] Moreover, the manufacturing method of the vibration device 100 of this embodiment preferably includes, after the step of bonding the vibration element 40, a step of bonding the lid 20 to the polished third surface 10a of the second insulating layer 13 with the vibration element 40 accommodated in the accommodation space between the base 10 and the lid 20. According to this method, the lid 20 is bonded to the polished third surface 10a of the second insulating layer 13, specifically, to the bonding layer 30 formed on the third surface 10a, so that the base 10 and the lid 20 can be bonded in a stable state and can be hermetically sealed.

[0049] In the manufacturing method of the vibration device 100 of the present embodiment, the step of forming the second insulating layer 13 is preferably performed by using a CVD method. According to this method, the second insulating layer 13 is formed by using the CVD method, so that, for example, the gas used can easily permeate and the layer can be formed strongly and uniformly.

[0050] In the manufacturing method of the resonator device 100 of the present embodiment, the step of forming the second insulating layer 13 is preferably performed using a sputtering method. According to this method, the second insulating layer 13 is formed using a sputtering method, so that the second insulating layer 13 can be manufactured in a wide range of environments, for example, by appropriately selecting the environment according to the manufacturing environment.

[0051] In the manufacturing method of the resonator device 100 of the present embodiment, the step of forming the second insulating layer 13 preferably involves depositing an oxide. According to this method, the second insulating layer 13 is formed by depositing an oxide, so that, for example, the wiring layer including the pad electrode 14a and wiring can be electrically insulated from the mount electrode 16 connected to the resonator element 40.

[0052] In the manufacturing method of the vibration device 100 of this embodiment, the step of bonding the vibration element 40 preferably bonds the vibration element 40 to the mount electrode 16 by the metal bump 18. According to this method, since the vibration element 40 is bonded by the metal bump 18, it is possible to prevent the vibration element 40 from coming into contact with the underlying wiring layer or the like.

[0053] In the manufacturing method of the resonator device 100 of this embodiment, the step of forming the mount electrode 16 preferably includes forming the mount electrode 16 on the polished third surface 10a of the second insulating layer 13 via a resin layer 51. According to this method, since the mount electrode 16 is formed via the resin layer 51, it is possible to reduce stress when stress is applied to the mount electrode 16 and reduce impact when impact is applied to the resonator device 100.

[0054] Modifications of the above embodiment will now be described.

[0055] As described above, the method for forming the metal pattern 15A is not limited to the manufacturing method shown in Figures 4A to 4K, and the metal pattern 15A may be formed by the manufacturing method shown in Figures 5A to 5K. The manufacturing method of the vibration device 100A of the modified example is different in that, instead of forming the opening 12a in the base 10A and then forming the second insulating layer 13, the second insulating layer 13 is formed on the base 10A and then the opening 13a is formed. Only the parts that are different from the above embodiment will be described below.

[0056] Specifically, in the step shown in FIG. 5A, a first insulating layer 12 covering the pad electrodes 14a, 14b is formed on a semiconductor substrate 11 to complete the base 10A. In the step shown in FIG. 5B, a second insulating layer 13 is formed on the first insulating layer 12 of the base 10A. In the step shown in FIG. 5C, the uneven third surface 10a of the second insulating layer 13 is flattened by a CMP method. In the step shown in FIG. 5D, an etching process is performed on the first insulating layer 12 and the second insulating layer 13 in an area overlapping with the pad electrode 14a in a planar view to form an opening 13a. As a result, the surface of the pad electrode 14a is exposed.

[0057] 5E to 5K in the same manner as in the above embodiment, a modified resonator device 100A is completed, which reflects the shape of the opening 13a formed in Fig. 5D. Even in this case, the mount electrode 16 is bonded onto the flattened second insulating layer 13, so that the resonator element 40 and the metal bump 18, and the resonator element 40 and the circuit element 11a1 can be electrically connected in a stable state.

[0058] Thus, in the manufacturing method of the vibration device 100A of the modified example, the base 10A includes the pad electrodes 14a and 14b covered with the first insulating layer 12 and electrically connected to the circuit element 11a1, and the step of forming the mount electrode 16 includes the steps of forming an opening 13a in the first insulating layer 12 and the second insulating layer 13 overlapping with the pad electrode 14a in a plan view to expose a part of the pad electrode 14a, and forming a metal pattern 15A including the mount electrode 16 and the wiring 15 connecting between the exposed pad electrode 14a and the mount electrode 16. According to this method, the metal pattern 15A electrically connected to the circuit element 11a1 is connected to the mount electrode 16, so that the circuit element 11a1 and the vibration element 40 can be connected in an electrically stable state.

[0059] Furthermore, as described above, it is not limited to planarizing the entire third surface 10a of the second insulating layer 13, but it is also possible to polish and planarize only at least a portion of the third surface 10a opposite the base 10A of the second insulating layer 13, specifically, the portion where the mount electrode 16 is formed and the portion where the bonding layer 30 is formed.

[0060] Furthermore, as described above, the method of joining the base 10 and the lid 20 is not limited to joining them via the joining layer 30 on the second insulating layer 13, but may be, for example, by performing an etching process down to the surface of the semiconductor substrate 11 of the base 10A in the joining area to expose a flat surface for joining.

[0061] In addition, as described above, the bonding layer 30 is not limited to being formed using the Au film 15b, and for example, after forming the TiW film 15a, which is the first metal pattern 15A1, the metal film may be planarized. Then, the metal pattern 15A is formed.

[0062] Furthermore, as described above, the present invention is not limited to forming the resin layer 51 under the mount electrode 16, and the mount electrode 16 may be formed without forming the resin layer 51. [Explanation of symbols]

[0063] 10, 10A...base, 10a...third surface, 10Aa...fifth surface, 10b, 10Ab...fourth surface, 11...semiconductor substrate, 11a...first surface, 11a1...circuit element, 11b...second surface, 12...first insulating layer, 12a...opening, 13...second insulating layer, 13a...opening, 14a...pad electrode, 14b...pad electrode, 15...wiring, 15A, 15A1, 15A2...metal pattern, 15a...Ti W film, 15b...Au film, 16...mount electrode, 17...contact electrode, 17a...opening, 18...metal bump, 20...lid, 21...recess, 30...bonding layer, 40...vibration element, 41...element substrate, 42...first excitation electrode, 43...second excitation electrode, 50...through electrode, 50a...through hole, 51...resin layer, 52...insulating layer, 71, 72...external connection terminal, 100, 100A...vibration device.

Claims

1. a semiconductor substrate having a first surface and a second surface, the semiconductor substrate having a circuit element formed on the first surface; a first insulating layer disposed on the first surface of the semiconductor substrate and covering the circuit elements; Providing a base comprising: forming a second insulating layer by depositing an insulating material on a surface of the first insulating layer opposite to the semiconductor substrate; polishing and planarizing at least a portion of a surface of the second insulating layer opposite the base; forming a mount electrode on the polished surface of the second insulating layer; bonding a vibration element to the mount electrode; A method for manufacturing a vibration device comprising the steps of:

2. A method for manufacturing a vibration device according to claim 1, comprising the steps of: The method for manufacturing a vibration device, wherein the planarizing step uses chemical mechanical polishing to perform planarization.

3. A method for manufacturing a vibration device according to claim 1, comprising the steps of: A method for manufacturing a vibration device, comprising the steps of: after the step of bonding the vibration element, bonding the lid body to the polished surface of the second insulating layer while the vibration element is accommodated in the accommodation space between the base and the lid body.

4. A method for manufacturing a vibration device according to claim 1, comprising the steps of: A method for manufacturing a vibration device, wherein the step of forming the second insulating layer is performed by using a CVD method.

5. A method for manufacturing a vibration device according to claim 1, comprising the steps of: A method for manufacturing a vibration device, wherein the step of forming the second insulating layer is performed by using a sputtering method.

6. A method for manufacturing a vibration device according to claim 1, comprising the steps of: the base in the step of preparing the base includes a pad electrode covered with the first insulating layer and electrically connected to the circuit element; The step of forming the mount electrode includes: forming an opening in the first insulating layer and the second insulating layer overlapping the pad electrode in a plan view to expose a portion of the pad electrode; forming a metal pattern including the mount electrode and wiring connecting the exposed pad electrode and the mount electrode; A method for manufacturing a vibration device comprising the steps of:

7. A method for manufacturing a vibration device according to claim 1, comprising the steps of: A method for manufacturing a vibration device, wherein the step of forming the second insulating layer comprises depositing an oxide.

8. A method for manufacturing a vibration device according to any one of claims 1 to 7, comprising: A method for manufacturing a vibration device, wherein the step of bonding the vibration element bonds the vibration element to the mount electrode using a metal bump.

9. A method for manufacturing a vibration device according to any one of claims 1 to 7, comprising: A method for manufacturing a vibration device, wherein the step of forming the mount electrode includes forming the mount electrode on the polished surface of the second insulating layer via a resin layer.

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