Substrate processing apparatus

Abstract

To provide a substrate processing apparatus capable of stabilizing a temperature of processing liquid supplied to a substrate.SOLUTION: A substrate processing apparatus 100 of an embodiment, comprises a processing part 2 (201 and 202) for processing a substrate S, and includes a processing liquid supply device 1 that supplies first processing liquid and second processing liquid of which a temperature is lower than that of the first processing liquid. The processing liquid supply device 1 includes: a first processing liquid circulation line L1 that supplies the first processing liquid to the substrate S; and a second processing liquid circulation line L2 that supplies the second processing liquid to the substrate S. The first processing liquid circulation line L1 includes a first returning pipe 35 that circulates the first processing liquid that is not supplied to the substrate S in the processing parts 201 and 202. The second processing liquid circulation line L2 includes a second returning pipe 65 that circulates the second processing liquid that is not supplied to the substrate S in the processing parts 201 and 202. A thermal conversion area A performing thermal conversion is provided between the first returning pipe 35 and the second returning pipe 65.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus. [Background technology]

[0002] Conventionally, there has been known a wet etching type substrate processing apparatus that etches a film laminated on a substrate such as a semiconductor wafer or glass using a processing liquid. In such a substrate processing apparatus, the etching rate can be increased by increasing the temperature of the processing liquid supplied to the substrate.

[0003] In a substrate processing apparatus that uses a high-temperature processing liquid, for example, in order to heat the processing liquid to be supplied to the substrate, a heater is installed on a piping path from a processing liquid tank in which the processing liquid is stored to a nozzle that ejects the processing liquid toward the substrate. By heating the processing liquid with this heater, it becomes possible to supply the high-temperature processing liquid to the substrate.

[0004] A change in the temperature of the processing liquid supplied to the substrate changes the etching rate, so that in a substrate processing apparatus, it is necessary to strictly control the temperature of the processing liquid supplied to the substrate in order to enable uniform etching. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] JP 2019-192863 A Summary of the Invention [Problem to be solved by the invention]

[0006] In such a substrate processing apparatus, during etching, an appropriate amount of processing liquid is discharged from a nozzle onto a substrate that has been carried in. If it takes a long time for the processing liquid to be discharged after being heated by the heater, the temperature of the processing liquid will drop. For this reason, a piping path is configured so that the processing liquid heated by the heater is not allowed to remain, but is returned to the processing liquid tank. At this time, the processing liquid returning to the processing liquid tank has been heated by the heater, and is therefore at a higher temperature than the processing liquid stored in the processing liquid tank.

[0007] When high-temperature processing liquid flows into the processing liquid tank, the temperature of the processing liquid in the processing liquid tank becomes higher than the target temperature, making it difficult to control the temperature of the processing liquid to be supplied to the substrate. Alternatively, it becomes impossible to supply the processing liquid until the temperature of the processing liquid in the processing liquid tank can be adjusted to the target temperature, making it impossible to perform etching processing on the substrate.

[0008] SUMMARY OF THE PRESENT DISCLOSURE In order to solve the above problems, an object of the present invention is to provide a substrate processing apparatus capable of stabilizing the temperature of a processing liquid supplied to a substrate. [Means for solving the problem]

[0009] A substrate processing apparatus according to an embodiment of the present invention is provided with a processing section for processing a substrate, and has a processing liquid supplying device that supplies a first processing liquid and a second processing liquid having a lower temperature than the first processing liquid to the substrate carried into the processing section, the processing liquid supplying device having a first processing liquid circulation line that supplies the first processing liquid to the substrate, and a second processing liquid circulation line that supplies the second processing liquid to the substrate, the first processing liquid circulation line having a first return pipe that circulates the first processing liquid that has not been supplied to the substrate in the processing section, the second processing liquid circulation line having a second return pipe that circulates the second processing liquid that has not been supplied to the substrate in the processing section, and a heat exchange area that performs heat exchange between the first return pipe and the second return pipe is provided. Effect of the Invention

[0010] According to the embodiment of the present invention, the temperature of the processing liquid supplied to the substrate in the substrate processing apparatus can be stabilized. [Brief description of the drawings]

[0011] [Figure 1] 1 is a schematic configuration diagram showing a configuration of a substrate processing apparatus according to a first embodiment. [Diagram 2] FIG. 2 is a schematic diagram showing the configuration of a processing unit according to the first embodiment. [Diagram 3] 5 is a flowchart showing the operation of the substrate processing apparatus according to the first embodiment. [Figure 4] FIG. 11 is a schematic diagram showing the configuration of a substrate processing apparatus according to a second embodiment. [Diagram 5] FIG. 11 is a schematic configuration diagram showing the configuration of a substrate processing apparatus according to a third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] [1. First embodiment] [1-1. Configuration] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. As shown in Fig. 1, a substrate processing apparatus 100 of this embodiment includes a processing liquid supplying apparatus 1, a plurality of processing sections 2, and a control apparatus 5. In this embodiment, two processing sections 2 are provided (hereinafter, processing sections 201 and 202). The processing liquid supplying apparatus 1 supplies different types of processing liquid W1 (first processing liquid) and processing liquid W2 (second processing liquid) to each processing section 2.

[0013] The processing liquid supplying device 1 includes a processing liquid circulation line L1, a processing liquid circulation line L2, and a heat exchange area A. The processing liquid circulation line L1 supplies the processing liquid W1 from a supply tank 3 to the processing section 2, and recovers the processing liquid W1 that has not been discharged in the processing section 2 into the supply tank 3. The processing liquid circulation line L2 supplies the processing liquid W2 from a supply tank 6 to the processing section 2, and recovers the processing liquid W2 that has not been discharged in the processing section 2 into the supply tank 6. The heat exchange area A is an area where heat exchange takes place between the processing liquid W1 and the processing liquid W2 that have not been discharged in the processing section 2. The processing liquid circulation line L1 and the processing liquid circulation line L2 will be described in detail later.

[0014] (Processing solution) In this embodiment, the processing liquid W1 is described as an aqueous solution of phosphoric acid (hereinafter referred to as phosphoric acid solution) and the processing liquid W2 is described as ultrapure water (hereinafter referred to as DIW), but the processing liquid W1 and the processing liquid W2 are not limited to these, and various processing liquids can be used as long as they are used to process the substrate S in the substrate processing apparatus 100. The processing liquid W1 and the processing liquid W2 are processing liquids that have different temperatures at least when supplied to the substrate S in the processing section 2. The temperature of the processing liquid W2 is lower than the temperature of the processing liquid W1. In this embodiment, the temperature of the processing liquid W2 is lower than the temperature of the processing liquid W1 and higher than room temperature.

[0015] (Processing section) The processing section 2 supplies processing liquids W1 and W2 to a substrate S, such as a semiconductor wafer or glass, and performs an etching process and a cleaning process (rinsing process). In this embodiment, the substrate S is a semiconductor wafer having a nitride film and an oxide film formed on its surface. The processing section 201 and the processing section 202 are basically configured the same. As shown in FIG. 2, the processing section 2 includes a chamber 2a, a rotary drive section 2b, a processing liquid discharge section 2c, a heating section 2d, and a processing liquid recovery section 2e.

[0016] The chamber 2a is a housing that constitutes a space for processing the substrate S. A rotation drive unit 2b, a processing liquid discharge unit 2c, a heating unit 2d, and a processing liquid recovery unit 2e are arranged inside the chamber 2a. An opening (not shown) that can be opened and closed by a shutter is formed on the side of the chamber 2a. The substrate S is carried in and out of the chamber 2a through this opening. The rotation drive unit 2b holds and rotates the substrate S. The rotation drive unit 2b is, for example, a spin chuck that holds the edge of the substrate S with a chuck pin and rotates the held substrate S around an axis perpendicular to the surface of the substrate S.

[0017] The processing liquid discharger 2c discharges the processing liquid onto the substrate S. The processing liquid discharger 2c is provided, for example, above the rotary drive unit 2b, and is a nozzle that discharges the processing liquid onto the surface of the substrate S rotated by the rotary drive unit 2b. The nozzle is connected to the processing liquid supplying device 1 via a pipe. The processing unit 2 may be provided with only one nozzle of the processing liquid discharger 2c, or may be provided with a plurality of nozzles. In this embodiment, a nozzle 2c1 that discharges the processing liquid W1 and a nozzle 2c2 that discharges the processing liquid W2 onto the substrate S are provided. Note that each processing unit 2 may be provided with one nozzle, and the nozzle may be shared for discharging the processing liquid W1 and the processing liquid W2.

[0018] The heating unit 2d heats the processing liquid W1 supplied to the substrate S. The heating unit 2d in this embodiment is a heater plate that is provided at a position facing the surface of the substrate S held by the rotation drive unit 2b and is movable in a direction toward and away from the substrate S. The surface of the heating unit 2d facing the substrate S is larger than the surface of the substrate S and is circular in shape to cover the substrate S in a plan view. The heating unit 2d is supported by a lifting mechanism (not shown) and moves down by driving the lifting mechanism to approach the substrate S and heat the processing liquid W1 supplied to the substrate S. The heating unit 2d also moves up by driving the lifting mechanism to enable a robot hand (not shown) to carry the substrate S in or out. The heating unit 2d is electrically connected to the control device 5 and its drive is controlled by the control device 5. Note that heating the processing liquid W1 supplied to the substrate S also includes a mode in which the processing liquid W1 is indirectly heated by heating the substrate S.

[0019] The heating unit 2d has two discharge ports 60a1 and 60a2 through which the tips of the nozzles 2c1 and 2c2 are inserted and exposed on the substrate S side. The discharge ports 60a1 and 60a2 are each formed at a position offset from the axis of rotation of the rotation drive unit 2b. This is because the portions of the substrate S facing the discharge ports 60a1 and 60a2 change sequentially as the substrate S rotates, thereby contributing to uniforming the temperature of the processing liquid W1.

[0020] As shown in FIG. 2, the processing liquid recovery unit 2e is a cylindrical body bent so that the diameter at the top is narrowed, and is provided so as to surround the rotary drive unit 2b. The processing liquid recovery unit 2e is a cup that receives the processing liquids W1 and W2 that are supplied to the substrate S and scattered from the substrate S by the rotation of the substrate S. An opening 2a1 is provided at the bottom of the chamber 2a, and this opening 2a1 is connected to a drainage flow path. The processing liquids W1 and W2 received on the inner wall of the processing liquid recovery unit 2e flow downward along the inner wall of the processing liquid recovery unit 2e and are discharged to the outside of the substrate processing apparatus 100 through the opening 2a1. The processing liquids W1 and W2 received by the processing liquid recovery unit 2e may be recovered and reused.

[0021] Next, the processing liquid circulation line L1 and the processing liquid circulation line L2 will be described.

[0022] (Processing liquid circulation line L1) The processing liquid circulation line L1 (first processing liquid circulation line) includes a supply tank 3, a heater 31, a pump 32, a circulation pipe 33, a supply pipe , and a return pipe .

[0023] The supply tank 3 is for storing the processing liquid W1 supplied from the adjustment tank 4, and is, for example, a rectangular parallelepiped tank made of a material that is corrosion-resistant to the processing liquid W1. A heater 31 is installed in the supply tank 3 for heating the processing liquid W1 and adjusting the temperature of the processing liquid W1. The heater 31 heats the processing liquid W1, for example, by generating heat when electricity is applied thereto. The heater 31 is electrically connected to the control device 5, and its operation is controlled by the control device 5.

[0024] One end of the circulation pipe 33 is connected to the bottom of the supply tank 3, and the other end of the circulation pipe 33 is connected to the top of the supply tank 3. A pump 32 is provided in the middle of the circulation pipe 33. The pump 32 is electrically connected to the control device 5, and its operation is controlled by the control device 5. When the pump 32 is operated, the processing liquid W1 in the supply tank 3 is sent to the circulation pipe 33. The circulation pipe 33 extends from the supply tank 3 to the vicinity of each processing unit 2, and the processing liquid W1 that is not supplied to the supply pipe 34 returns to the supply tank 3. The circulation pipe 33 is surrounded by a heat insulating material to prevent the temperature of the processing liquid W1 flowing inside from decreasing due to natural heat radiation.

[0025] The supply tank 3 is connected to the treatment liquid W1 in an adjustment tank 4 so as to be capable of being delivered thereto. The treatment liquid W1 flowing through the treatment liquid circulation line L1 has the concentrations of the components contained in the treatment liquid W1 previously adjusted in the adjustment tank 4.

[0026] The adjustment tank 4 is, for example, a tank having a rectangular parallelepiped shape, and a heater 41 is installed inside the adjustment tank 4 to heat the processing liquid W1 and adjust the temperature. The heater 41 is, for example, the same as the heater 31. The heater 41 is electrically connected to the control device 5, and the control device 5 controls the operation of the heater 41.

[0027] For example, when the processing liquid W1 is a phosphoric acid solution, silica is added to the processing liquid W1 in order to improve the etching selectivity of the nitride film and the oxide film formed on the substrate S. For this purpose, a pipe for supplying phosphoric acid, a pipe for supplying DIW, and a pipe for supplying silica are connected to the adjustment tank 4. The pipe for supplying phosphoric acid, the pipe for supplying DIW, and the pipe for supplying silica are pipes for new liquids that introduce phosphoric acid or the like equivalent to the amount used and reduced in the processing unit 2. The processing liquid W1 whose concentration has been adjusted in the adjustment tank 4 is heated by a heater 41 and adjusted to a predetermined temperature. The adjustment tank 4 is connected to the supply tank 3 via a pipe. A pump 42 is provided in the middle of this pipe. The pump 42 is electrically connected to the control device 5, and its operation is controlled by the control device 5. The processing liquid W1 whose temperature has been adjusted in the adjustment tank 4 is supplied to the supply tank 3 by driving the pump 42.

[0028] The circulation pipe 33 is a pipe for transporting the processing liquid W1 stored in the supply tank 3 from the supply tank 3 to the vicinity of the processing unit 2 and recovering the transported processing liquid W1 in the supply tank 3. The supply pipe 34 is a pipe for supplying the processing liquid W1 flowing through the circulation pipe 33 to each processing unit 2. The return pipe 35 is a pipe for recovering the processing liquid W1 that was not discharged in each processing unit 2 in the supply tank 3. In other words, the return pipe 35 is a pipe for circulating the processing liquid W1 that was not supplied to the substrate S in the processing unit 2.

[0029] Branches 36a and 36b are provided midway along the circulation pipe 33 near the processing sections 2, which are connections to a supply pipe 34 that supplies the processing liquid W1 to each processing section 2. With respect to the flow of the processing liquid W1 in the circulation pipe 33 as a reference, the branch 36a is on the upstream side and the branch 36b is on the downstream side.

[0030] A valve 33a is provided in the circulation pipe 33, downstream of the branch 36b with respect to the flow of the processing liquid W1. When the valve 33a is opened while the pump 32 is in operation, the circulation of the processing liquid W1 in the circulation pipe 33 (the delivery of the processing liquid W1 in the supply tank 3) starts. When the valve 33a is closed, the circulation of the processing liquid W1 in the circulation pipe 33 stops. The valve 33a is electrically connected to the control device 5, and the opening and closing of the valve 33a is controlled by the control device 5. A filter for removing impurities from the processing liquid W1 may be provided on the path of the circulation pipe 33.

[0031] The supply pipe 34 is a pipe having one end connected to the circulation pipe 33 via branches 36a and 36b, and the other end connected to the nozzle 2c1 of the processing liquid discharge unit 2c provided in each processing unit 2. The supply pipe 34 connected to the branch 36a supplies the processing liquid W1 to the processing unit 201. The supply pipe 34 connected to the branch 36b supplies the processing liquid W1 to the processing unit 202. Outside the processing unit 2, the supply pipe 34 is surrounded by a heat insulating material to prevent the temperature of the processing liquid W1 flowing therein from decreasing due to natural heat radiation. The processing liquid W1 supplied to the nozzle 2c1 is discharged from the nozzle 2c1 onto the substrate S.

[0032] A heater 37 is provided in the middle of the supply pipe 34. The heater 37 heats the processing liquid W1 flowing through the supply pipe 34. In this embodiment, the heater 37 is installed in the chamber 2a of the processing unit 2 in the supply pipe 34. The processing liquid W1 flowing through the supply pipe 34 is further heated by the heater 37 and supplied to the nozzle 2c1. In this embodiment, the heater 37 is provided in the chamber 2a, so that the distance and time for the processing liquid W1 to be discharged from the nozzle 2c1 (discharge port 60a1) after being heated by the heater 37 can be shortened. This makes it possible to increase the temperature of the processing liquid W1 discharged from the nozzle 2c1. The heater 37 is electrically connected to the control device 5, and the driving of the heater 37 is controlled by the control device 5.

[0033] A valve 38a is provided in the middle of the supply pipe 34 before the nozzle 2c1. The valve 38a has a function of controlling the start and stop of discharge of the processing liquid W1 from the nozzle 2c1 by opening and closing, and adjusting the flow rate of the processing liquid W1 discharged from the nozzle 2c1. A branch 36c is provided in the middle of the supply pipe 34 at a location downstream of the heater 37 and upstream of the valve 38a with respect to the flow of the processing liquid W1 as a reference. One end of the return pipe 35 is connected to the branch 36c. A valve 38b is provided in the middle of the return pipe 35 at a location upstream of a junction 36d described later. The valve 38b controls the inflow of the processing liquid W1 into the return pipe 35 by opening and closing. The valves 38a and 38b are electrically connected to the control device 5, and the opening and closing of the valves 38a and 38b are controlled by the control device 5. When the valve 38b is open and the valve 38a is closed, the processing liquid W1 flowing through the supply pipe 34 flows into the return pipe 35.

[0034] The return pipe 35 is a pipe that returns the processing liquid W1 that has been supplied to each processing unit 2 and not discharged from the nozzle 2c1 to the supply tank 3. In this embodiment, no heat insulating material is provided around the return pipe 35, and the return pipe 35 is configured so that the heat of the processing liquid W1 inside the return pipe 35 is reduced by natural heat dissipation.

[0035] The return pipes 35 extending from the inside of the chamber 2a of each processing unit 2 join together (at the joining point 36d) at a position outside the chamber 2a of each processing unit 2, and the return pipes 35 become a single pipe. After joining together at the joining point 36d, the return pipes 35 are connected to the supply tank 3.

[0036] (Processing liquid circulation line L2) The processing liquid circulation line L2 (second processing liquid circulation line) includes a supply tank 6, a heater 61, a pump 62, a circulation pipe 63, a supply pipe 64, and a return pipe 65.

[0037] The supply tank 6 is for storing the processing liquid W2 introduced through a pipe for introducing new liquid, and for example, a tank having a rectangular parallelepiped shape is used. In this embodiment, the processing liquid W2 is DIW for cleaning the substrate S, and DIW at room temperature is supplied to the supply tank 6 through the pipe for introducing new liquid. A heater 61 is installed in the supply tank 6 for heating the processing liquid W2 to adjust the temperature of the processing liquid W2. For example, the heater 61 is the same as the heater 31. The heater 61 is electrically connected to the control device 5, and the drive of the heater 61 is controlled by the control device 5.

[0038] One end of the circulation pipe 63 is connected to the bottom of the supply tank 6. The other end of the circulation pipe 63 is connected to the top of the supply tank 6. A pump 62 is provided in the middle of the circulation pipe 63. The pump 62 is electrically connected to the control device 5, and its operation is controlled by the control device 5. When the pump 62 is driven, the processing liquid W2 in the supply tank 6 is sent to the circulation pipe 63. The circulation pipe 63 extends to the vicinity of the processing unit 2, and the processing liquid W2 that has not been supplied to the supply pipe 64 returns to the supply tank 6. In the middle of the circulation pipe 63, near the processing unit 2, branches 66 and 67 are provided as connection parts with the supply pipe 64 that supplies the processing liquid W2 to the processing unit 2. With respect to the flow of the processing liquid W2 in the circulation pipe 63 as a reference, the branch 66 is located upstream and the branch 67 is located downstream. In this embodiment, the section from the branch 67, which is the branch located at the most downstream of the circulation pipe 63, to the supply tank 6 is referred to as a return pipe 65. That is, the processing liquid W2 that is not supplied to the supply pipe 64 and therefore not ejected from the nozzle 2c2 flows through the return pipe 65 and returns to the supply tank 6.

[0039] A valve 63a is provided in the circulation pipe 63, downstream of the branch 67 with respect to the flow of the processing liquid W2. When the valve 63a is opened while the pump 62 is in operation, the circulation of the processing liquid W2 in the circulation pipe 63 (the delivery of the processing liquid W2 in the supply tank 6) starts. When the valve 63a is closed, the circulation of the processing liquid W2 in the circulation pipe 63 stops.

[0040] The circulation pipe 63 is a pipe for delivering the processing liquid W2 stored in the supply tank 6 to the vicinity of the processing unit 2 and recovering the delivered processing liquid W2 in the supply tank 6. The supply pipe 64 is a pipe for supplying the processing liquid W2 flowing through the circulation pipe 63 to each processing unit 2. The return pipe 65 is a pipe for recovering the processing liquid W2 not discharged in each processing unit 2 in the supply tank 6. In other words, the return pipe 65 is a pipe for circulating the processing liquid W1 not supplied to the substrate S in the processing unit 2. In this embodiment, the pipe downstream of the branch 67 in the circulation pipe 63 serves as the return pipe 65.

[0041] The supply pipe 64 has one end connected to the circulation pipe 63 via branches 66 and 67, and the other end connected to the nozzle 2c2 of the processing liquid discharge unit 2c provided in each processing unit 2. The supply pipe 64 connected to the branch 66 supplies the processing liquid W2 to the processing unit 201. The supply pipe 64 connected to the branch 67 supplies the processing liquid W2 to the processing unit 202. The processing liquid W2 supplied to the nozzle 2c2 is discharged from the nozzle 2c2 onto the substrate S.

[0042] Further, a valve 68 is provided in the middle of the supply pipe 64. In this embodiment, the valve 68 is provided on the supply pipe 64 outside the chamber 2a. The valve 68 has a function of controlling the start and stop of discharge of the processing liquid W2 from the nozzle 2c2 by opening and closing, and adjusting the flow rate of the processing liquid W2 discharged from the nozzle 2c2. The valve 68 is electrically connected to the control device 5, and the opening and closing of the valve 68 is controlled by the control device 5. For example, when the processing liquid W2 is not supplied to the supply pipe 64 or when the amount of the processing liquid W2 supplied to the processing unit 2 is small compared to the flow rate of the processing liquid W2 circulating in the circulation pipe 63, a part of the processing liquid W2 flows into the return pipe 35 of the circulation pipe 63 according to the opening adjustment of the valve 68 and is collected in the supply tank 6.

[0043] (Heat exchange area) A heat exchange area A formed by contacting the return pipes 35, 65 is provided on the paths of the above-mentioned processing liquid circulation lines L1 and L2. The heat exchange area A is an area in which the return pipes 35, 65 are brought into contact with the return pipes 35, 65 through which the processing liquid W1 flows, and thereby the heat of the processing liquid W1, which has a higher temperature than the processing liquid W2, is transferred to the processing liquid W2.

[0044] In the heat exchange area A, the return pipe 35 and the return pipe 65 are in contact with each other so that heat exchange between the processing liquid W1 and the processing liquid W2 can be efficiently performed. In FIG. 1, the return pipe 35 and the return pipe 65 in the heat exchange area A are shown slightly separated from each other for the sake of easy understanding. The return pipe 35 and the return pipe 65 are in contact with each other, so-called indirect heat exchange is performed in which the heat of the processing liquid W1 is transferred to the processing liquid W2 through the walls of the return pipes 35 and 65. In order to perform efficient heat exchange, the return pipes 35 and 65 can be installed approximately parallel to each other, and the length of the contact portion of the return pipes 35 and 65 can be increased. The shape of the contact portion of the return pipes 35 and 65 can be changed to increase the area of ​​the contact portion. In addition to contacting the return pipe 35 and the return pipe 65, other heat exchange methods such as a multi-tube type, a spiral type, and a plate type can be used. In other words, contact in this embodiment includes not only direct contact between the return pipes, but also contact via metal members or liquids with excellent thermal conductivity, and refers to a general configuration in which heat exchange between each return pipe 35, 65 is efficiently performed.

[0045] (Control device 5) The substrate processing apparatus 100 includes a control device 5 that controls the processing liquid supplying apparatus 1 and the processing of the substrate S in the processing section 2. The control device 5 includes a substrate processing control section 51, a temperature control section 52 for the processing liquid W1, a temperature control section 53 for the processing liquid W2, and a memory section 54 that stores set processing conditions and the like. The memory section 54 also stores a target temperature T1 for the processing liquid W1 in the supply tank 3 and a target temperature T2 for the processing liquid W2 in the supply tank 6.

[0046] The substrate processing control unit 51 controls various processes performed by the substrate processing apparatus 100 in the processing unit 2. For example, the substrate processing control unit 51 controls the loading and unloading of the substrate S into and from the chamber 2a in the processing unit 2, the driving of the rotation drive unit 2b, the flow rates of the processing solutions W1 and W2 discharged from the processing solution discharge unit 2c, heating by the heating unit 2d, and the like, in accordance with preset contents, to perform processing on the substrate S. The substrate processing control unit 51 is connected to a user interface (not shown), and is configured to be able to execute various processes and set various parameters based on input from a user.

[0047] The temperature control unit 52 refers to the target temperature T1 of the processing liquid W1 stored in the memory unit 54, and controls the heater 31 and the heater 41 to adjust the temperature of the processing liquid W1 stored in the adjustment tank 4 and the supply tank 3. That is, the temperature control unit 52 refers to the target temperature T1 of the processing liquid W1, and controls the driving of the heater 31 and the heater 41 so as to maintain the temperature of the processing liquid W1 stored in the adjustment tank 4 and the temperature of the processing liquid W1 stored in the supply tank 3 at the target temperature T1. The temperature control unit 53 refers to the target temperature T2 of the processing liquid W2 stored in the memory unit 54, and controls the heater 61 to adjust the temperature of the processing liquid W2 stored in the supply tank 6. That is, the temperature control unit 53 refers to the target temperature T2 of the processing liquid W2, and controls the driving of the heater 61 so as to maintain the temperature of the processing liquid W2 stored in the supply tank 6 at the target temperature T2.

[0048] As an example, when the processing liquid W1 is a phosphoric acid solution and the processing liquid W2 is DIW, the target temperature T1 of the processing liquid W1 and the target temperature of the processing liquid W2 are as follows: That is, the target temperature T1 of the processing liquid W1 in the supply tank 3 by the temperature control unit 52 is set to 160° C., and the target temperature of the processing liquid W1 after passing through the heater 37 and being heated by the heater 37 is set to 170° C. Also, when the processing liquid W2 is DIW, the target temperature T2 of the processing liquid W2 in the supply tank 6 is set to 70° C.

[0049] [1-2. Operation] Next, the operation of the substrate processing apparatus 100 configured as above will be described. The operation of the substrate processing apparatus 100 is shown in the flowchart of Fig. 3. In this embodiment, the substrate processing apparatus 100 performs an etching process using a processing liquid W1 and a cleaning process using a processing liquid W2 on the substrate S. When performing the etching process and the cleaning process on the substrate S, the substrate processing apparatus 100 exchanges heat between the processing liquid W1 and the processing liquid W2 that were not discharged in the processing unit 2, and prevents the temperature of the processing liquid W1 in the supply tank 3 from becoming higher than the target temperature T1.

[0050] In the substrate processing apparatus 100, before the processing of the substrate S is started, a process of adjusting the processing liquid W1 is performed in advance. In the process of adjusting the processing liquid W1, the processing liquid W1 to be used for processing the substrate S in the processing unit 2 is adjusted in the adjustment tank 4, and the adjusted processing liquid W1 is supplied to the supply tank 3. The process of adjusting the processing liquid W1 includes a process of dissolving or mixing the components constituting the processing liquid W1 in the adjustment tank 4 so that each component has a predetermined concentration, and a process of adjusting the temperature of the dissolved or mixed processing liquid W1 to a predetermined temperature.

[0051] When the processing liquid W1 is a phosphoric acid solution, phosphoric acid, DIW, and silica are supplied into the adjustment tank 4 from pipes for supplying new phosphoric acid, DIW, and silica connected to the adjustment tank 4 so that the concentration of the processing liquid W1 is preset. In the adjustment tank 4, phosphoric acid, DIW, and silica are dissolved or mixed, and the concentration of the processing liquid W1 is adjusted. In the process of adjusting the temperature of the processing liquid W1, the processing liquid W1 in the adjustment tank 4 is heated by the heater 41 so that the temperature of the processing liquid W1 becomes a predetermined temperature (for example, 160° C.). The heated processing liquid W1 is supplied from the adjustment tank 4 to the supply tank 3 by driving the pump 42. This adjustment process of the processing liquid W1 is appropriately performed at the start of driving the substrate processing apparatus 100 and at the timing when the amount of the processing liquid W1 stored in the supply tank 3 becomes small. The processing liquid W1 supplied to the supply tank 3 is kept at 160° C. (target temperature T1) by the heater 31 in the supply tank 3.

[0052] When the processing liquid W1 is supplied to the supply tank 3, circulation of the processing liquid W1 is started (S01), and the processing liquid W1 in the supply tank 3 is circulated in the circulation pipe 33. The control device 5 opens the valve 33a and drives the pump 32. The processing liquid W1 in the supply tank 3 is supplied to the circulation pipe 33 by driving the pump 32. At this time, the valve 38a provided before the nozzle 2c1 of each processing unit 2 and the valve 38b provided between the branch 36c and the junction 36d are closed. As a result, the processing liquid W1 supplied from the supply tank 3 to the circulation pipe 33 returns to the supply tank 3 again via the branches 36a and 36b. In other words, the processing liquid W1 in the circulation pipe 33 circulates without flowing into the supply pipe 34.

[0053] The processing liquid W1 is heated by the heater 31 in the supply tank 3 and flows into the circulation pipe 33, whereby the processing liquid W1 with its temperature adjusted circulates in the circulation pipe 33. The processing liquid W1 circulates, so that the temperatures of the processing liquid W1 in the supply tank 3 and the circulation pipe 33 are controlled to be uniform. The control device 5 controls the driving of the heater 31 so as to maintain the temperature of the processing liquid W1 in the supply tank 3 at 160°C.

[0054] Next, circulation of the processing liquid W2 is started (S02). The circulation of the processing liquid W2 includes a temperature adjustment process for the processing liquid W2. When the processing liquid W2 is DIW, a pipe for supplying the DIW to the supply tank 6 is connected to the upper part of the supply tank 6, and the DIW is supplied to the supply tank 6 from this pipe. When the DIW is supplied, the DIW in the supply tank 6 is heated by the heater 61, and the temperature of the processing liquid W2 (DIW) in the supply tank 6 is adjusted to a target temperature T2 (e.g., 70°C) of the processing liquid W2.

[0055] Furthermore, the processing liquid W2 in the supply tank 6 is circulated in the circulation pipe 63 including the return pipe 65. The control device 5 opens the valve 63a and drives the pump 62. The processing liquid W2 in the supply tank 6 is supplied to the circulation pipe 63 by driving the pump 62. At this time, the valves 68 provided in the middle of each supply pipe 64 are closed. As a result, the processing liquid W2 supplied from the supply tank 6 to the circulation pipe 63 returns to the supply tank 6 again via the branch 66, the branch 67, and the return pipe 65. At this time, the processing liquid W2 returns to the supply tank 6 via the heat exchange area A in the return pipe 65. That is, the processing liquid W2 in the circulation pipe 63 circulates without flowing into the supply pipe 64. Note that the start of circulation of the processing liquid W1 (S01) and the start of circulation of the processing liquid W2 (S02) may be performed simultaneously. Also, the start of circulation of the processing liquid W1 (S01) may be performed after the start of circulation of the processing liquid W2 (S02).

[0056] Next, a step (S03) of supplying the processing liquid W1 to the substrate S loaded into the processing section 2 (chamber 2a) of the substrate processing apparatus 100 is performed. The substrate S loaded into the chamber 2a is held and rotated by the rotation drive section 2b. The substrate processing control section 51 of the control device 5 controls the processing liquid W1 to be supplied from the processing liquid discharge section 2c to the rotating substrate S.

[0057] The step (S03) of supplying the processing liquid W1 is controlled in more detail as follows. First, while the pump 32 is driven, the valve 38b is opened while the valve 38a is closed. As a result, the processing liquid W1, which has been adjusted in temperature in the supply tank 3 and circulates through the circulation pipe 33, flows into the supply pipe 34. Then, in the supply pipe 34, the temperature-adjusted processing liquid W1 flows up to the position of the branch 36c. That is, the temperature-adjusted processing liquid W1 flows up to the position near the nozzle 2c1. In addition, the processing liquid W1 supplied to the supply pipe 34 is heated by the heater 37 so that the temperature becomes higher than the target temperature T1 of the processing liquid W1 in the supply tank 3. In this embodiment, the processing liquid W1 is heated by the heater 37 to 170° C. When the valve 38b is opened and the valve 38a is closed, the processing liquid W1 heated by the heater 37 flows into the return pipe 35 through the branch 36c. That is, the processing liquid W1 that is not discharged onto the substrate S in the processing section 2 flows into the return pipe .

[0058] Then, when the substrate S is carried into the chamber 2a and the processing liquid W1 is discharged onto the substrate S, the valve 38b is closed and the valve 38a is opened. By opening the valve 38a, the heated processing liquid W1 is supplied to the nozzle 2c1. Then, the processing liquid W1 is discharged from the nozzle 2c1 and supplied onto the substrate S. The flow rate of the processing liquid W1 supplied onto the substrate S is adjusted by changing the opening degree of the valve 38a. The processing liquid W1 supplied onto the substrate S moves sequentially toward the outer periphery of the substrate S as the substrate S rotates, thereby performing an etching process on the substrate S. In addition, the processing liquid W1 on the substrate S is heated by the heating unit 2d. By heating by the heating unit 2d, the substrate S can be processed at a desired etching rate while maintaining the temperature of the processing liquid W1 discharged from the nozzle 2c1. When a predetermined time has elapsed since the supply of the processing liquid W1 onto the substrate S was started, the valve 38a is closed and the valve 38b is opened. Closing valve 38a stops the discharge of processing liquid W1 from nozzle 2c1, and ends the processing with processing liquid W1. Opening valve 38b causes the processing liquid W1 that is not discharged onto the substrate S to flow into return pipe 35. The processing liquid W1 that has not been discharged in each processing unit 2 (processing units 201, 202) and has flowed into return pipe 35 joins at junction 36d and reaches heat exchange area A. The processing liquid W1 that has passed through heat exchange area A returns to supply tank 3.

[0059] Here, when the step (S03) of supplying the processing liquid W1 is performed and the heated processing liquid W1 flows into the return pipe 35 of the processing liquid circulation line L1, the processing liquid W2 is circulating in the processing liquid circulation line L2 as described above, and therefore the processing liquid W2 flows in the return pipe 65. The processing liquid W1 and the processing liquid W2 pass through the heat exchange area A, whereby heat exchange occurs between the processing liquid W1 and the processing liquid W2. That is, the heat of the processing liquid W1 is transferred to the processing liquid W2, and the temperature of the processing liquid W1 returning to the supply tank 3 can be lowered.

[0060] When the processing of the substrate S with the processing liquid W1 is completed, a step (S04) of supplying the processing liquid W2 to the substrate S is performed. The substrate processing control unit 51 controls the processing liquid discharge unit 2c to supply the processing liquid W2 while continuing the rotation of the substrate S by the rotation drive unit 2b. More specifically, the valve 68 is opened to supply the processing liquid W2 to the supply pipe 64. By opening the valve 68, the processing liquid W2 whose temperature has been adjusted in the supply tank 6 is discharged from the nozzle 2c2 and supplied to the substrate S. At this time, the processing liquid W2 that does not flow from the circulation pipe 63 to the supply pipe 64 and is not discharged in the processing unit 2 flows into the return pipe 65. The flow rate of the processing liquid W2 supplied to the substrate S is adjusted by changing the opening degree of the valve 68. The processing liquid W2 supplied to the substrate S moves sequentially toward the outer periphery of the substrate S as the substrate S rotates, and the processing liquid W1 on the substrate S is replaced with the processing liquid W2, and the substrate S is cleaned.

[0061] When a predetermined time has elapsed since the supply of the processing liquid W2 to the substrate S was started, the valve 68 is closed, the discharge of the processing liquid W2 from the nozzle 2c2 is stopped, and the processing with the processing liquid W2 is terminated. Note that the valve 63a remains open during the step (S04) of supplying the processing liquid W2. Therefore, a part of the processing liquid W2 supplied from the supply tank 6 to the circulation pipe 63 flows into the return pipe 35. As a result, even during the step (S04) of supplying the processing liquid W2, in the heat exchange area A, the processing liquid W1 flows in the return pipe 35, and the processing liquid W2 flows in the return pipe 65. That is, in the heat exchange area A, heat exchange is performed between the processing liquid W1 and the processing liquid W2.

[0062] In the heat exchange area A, the return pipe 35 and the return pipe 65 are disposed approximately parallel to each other, and the walls of the return pipes 35 and 65 are in contact with each other. Therefore, indirect heat exchange is efficiently performed between the processing liquid W1 flowing through the return pipe 35 and the processing liquid W2 flowing through the return pipe 65, which are at least different in temperature. Therefore, the temperature of the processing liquid W1, which is sent from the supply tank 3 and flows into the return pipe 35 without being discharged from the nozzle 2c1, when it returns to the supply tank 3 again can be made lower than the temperature of the processing liquid W1 when it is discharged from the nozzle 2c1. It is preferable that the temperature of the processing liquid W1 when it returns to the supply tank 3 via the heat exchange area A is set to be equal to or lower than the target temperature T1 of the processing liquid W1 in the supply tank 3. Although it varies depending on the heat exchange method, the distance between the pipes that contact each other and the shape of the contacting portion are adjusted so that, for example, the processing liquid W1, which has a temperature of about 170° C. when it flows into the heat exchange area A, is equal to or lower than the target temperature T1 of the processing liquid W1 in the supply tank 3 when it flows out of the heat exchange area A. From the start of circulation of the processing liquids W1 and W2 through the heat exchange area A to the end of circulation, the processing liquid W1 at 160° C. or lower is collected in the supply tank 3.

[0063] When the processing of the substrate S with the processing liquid W2 is completed, the rotation by the rotary drive unit 2b is stopped, and the substrate S is unloaded. When the processing of the substrate S in the processing unit 2 of the substrate processing apparatus 100 is to be continued (S05: NO), the above-mentioned step of supplying the processing liquid W1 (S03) and the step of supplying the processing liquid W2 (S04) are performed for the next substrate S that is loaded.

[0064] When the processing of the substrate S in the processing section 2 by the substrate processing apparatus 100 is to be ended (S05: YES), the circulation of the processing liquid W1 is stopped (S06). The controller 5 closes the valves 33a and 38b and stops the operation of the pump 32 to stop the circulation of the processing liquid W1. After the circulation of the processing liquid W1 is stopped, the circulation of the processing liquid W2 is stopped (S07). The controller 5 closes the valve 63a and stops the operation of the pump 62 to stop the circulation of the processing liquid W2. Thereafter, the processing by the substrate processing apparatus 100 is ended.

[0065] [1-3. Effects] (1) The substrate processing apparatus 100 of the present embodiment as described above includes a processing section 2 for processing a substrate S, and a processing liquid supplying apparatus 1 for supplying a processing liquid W1 (first processing liquid) and a processing liquid W2 (second processing liquid) having a temperature lower than that of the processing liquid W1 to the substrate S carried into the processing section 2. The processing liquid supplying apparatus 1 includes a processing liquid circulation line L1 (first processing liquid circulation line) for supplying the processing liquid W1 to the substrate S, and a processing liquid circulation line L2 (second processing liquid circulation line) for supplying the processing liquid W2 to the substrate S. The processing liquid circulation line L1 includes a return pipe 35 (first return pipe) for circulating the processing liquid W1 that has not been supplied to the substrate S in the processing section 2, and the processing liquid circulation line L2 includes a return pipe 65 (second return pipe) for circulating the processing liquid W2 that has not been supplied to the substrate S in the processing section 2. A heat exchange area A for performing heat exchange between the return pipe 35 and the return pipe 65 is provided.

[0066] According to this embodiment, by providing the heat exchange area A, the temperature of the processing liquid W1 that is not supplied to the substrate S and flows through the return pipe 35 can be lowered. Therefore, the temperature of the processing liquid W1 that flows through the return pipe 35 and is recovered, for example, in the supply tank 3 can be lowered. The recovered processing liquid W1 is then circulated through the processing liquid circulation line L1 and used for supply to the substrate S. If the heat exchange area A is not provided and the temperature of the processing liquid W1 recovered in the supply tank 3 is higher than the target temperature T1 and the temperature difference is large, the substrate processing must be interrupted and the processing liquid must wait until the temperature drops to the target temperature T1, which reduces the efficiency of the substrate processing. Alternatively, a cooling mechanism must be provided to cool the processing liquid W1, which leads to an increase in power consumption. On the other hand, by providing the heat exchange area A as in this embodiment, for example, the temperature of the processing liquid W1 recovered in the supply tank 3 can be made the same temperature as or lower than the temperature of the processing liquid W1 stored in the supply tank 3 (the target temperature T1 of the processing liquid W1). In this case, the temperature of the processing liquid W1 can be easily adjusted by simply driving the heater to heat the processing liquid W1 to the target temperature T1 or to maintain the processing liquid W1 at the target temperature T1 before it is used for supplying to the substrate S. Therefore, the temperature of the processing liquid W1 supplied to the substrate S can be stabilized.

[0067] The temperature of the processing liquid W1 flowing through the return pipe 35 and recovered, for example, in the supply tank 3 may be higher than the temperature of the processing liquid W1 stored in the supply tank 3 (the target temperature T1 of the processing liquid W1). Even in this case, by providing the heat exchange area A, the temperature of the processing liquid W1 flowing through the return pipe 35 can be made lower than the temperature of the processing liquid W1 when it is supplied to the substrate S in the processing unit 2. This makes it possible to shorten the waiting time until the temperature drops to the target temperature T1 and to reduce the number of cooling operations, compared to a case in which the heat exchange area A is not provided. Therefore, it becomes easier to adjust the temperature of the processing liquid W1 flowing through the processing liquid circulation line L1, and the temperature of the processing liquid W1 supplied to the substrate S can be stabilized.

[0068] (2) In this embodiment, the processing liquid circulation line L1 further includes a supply pipe 34 (first supply pipe) that supplies the processing liquid W1 to a nozzle 2c1 that ejects the processing liquid W1 onto the substrate S in the processing unit 2, and a heater 37 (first heating unit) that is provided in the supply pipe 34 and heats the processing liquid W1 flowing through the supply pipe 34.

[0069] As a result, the processing liquid W1 is heated by the heater 37 before being supplied to the nozzle 2c1. By heating the processing liquid W1 by the heater 37 to a high temperature, the etching rate can be improved. In this way, even when the processing liquid W1 to be supplied to the nozzle 2c1 is heated to a high temperature by the heater 37, the temperature of the circulating processing liquid W1 can be lowered. Therefore, it becomes easy to adjust the temperature of the processing liquid W1 flowing through the processing liquid circulation line L1, and the temperature of the processing liquid W1 to be supplied to the substrate S can be stabilized.

[0070] (3) The processing liquid circulation line L1 further includes a supply tank 3 (first supply tank) that stores the processing liquid W1, and a heater 31 (second heating unit) that adjusts the temperature of the processing liquid W1 in the supply tank 3.

[0071] The temperature of the processing liquid W1 is adjusted to a target temperature T1 in the supply tank 3. Even in this case, by providing the heat exchange area A, the temperature of the processing liquid W1 recovered in the supply tank 3 can be lowered.

[0072] (4) The processing section 2 further includes a chamber 2a for processing the substrate S, and a heater 37 (first heating section) is provided in the chamber 2a.

[0073] By providing the heater 37 in the chamber 2a, the processing liquid W1 can be supplied to the substrate S immediately after being heated by the heater 37. This allows the processing liquid W1 to be supplied to the substrate S in a high temperature state.

[0074] (5) In this embodiment, there are multiple processing units 2, and the processing unit 2 further includes a circulation pipe 33 connected to the supply tank 3 for circulating the processing liquid W1. One end of the supply pipe 34 branches off from the middle of the circulation pipe 33 and is connected to the nozzle 2c1 of the processing unit 2. The return pipe 35 is connected to the supply tank 3 and returns the processing liquid W1 that has not been supplied to the substrate S in the processing unit 2 to the supply tank 3.

[0075] When the substrate processing apparatus 100 has a plurality of processing sections 2, the amount of processing liquid W1 circulating through the return pipe 35 increases. Therefore, the amount of processing liquid W1 heated by the heater 37 returning to the supply tank 3 increases. If a large amount of the heated processing liquid W1 flows into the supply tank 3, it becomes difficult to adjust the temperature of the processing liquid W1 in the supply tank 3. On the other hand, according to the present embodiment, even when the substrate processing apparatus 100 has a plurality of processing sections 2, the return pipe 35 passes through the heat exchange area A, so that the temperature of the processing liquid W1 collected in the supply tank 3 can be lowered. Therefore, the temperature of the processing liquid W1 in the supply tank 3 can be stabilized.

[0076] (6) In this embodiment, the processing liquid circulation line L2 further includes a supply tank 6 (second supply tank) that stores the processing liquid W2, a heater 61 (third heating unit) that adjusts the temperature of the processing liquid W2 in the supply tank 6, and a supply pipe 64 (second supply pipe) that supplies the processing liquid W2 in the supply tank 6 to the nozzle 2c2 that ejects the processing liquid W2 onto the substrate S in the processing unit 2. The processing liquid W2 in the supply tank 6 is adjusted by the heater 61 to a temperature higher than room temperature and lower than the temperature of the processing liquid W1 in the supply tank 3.

[0077] When the processing liquid W2 has a temperature higher than room temperature, it is necessary to provide a heating unit (heater 61) in the supply tank 6 as well. According to this embodiment, the return pipe 65 of the processing liquid circulation line L2 passes through the heat exchange area A, so that the temperature of the processing liquid W2 in the return pipe 65 can be increased. Therefore, it is possible to reduce the amount of power required to increase the temperature of the processing liquid W2 to a temperature higher than room temperature.

[0078] In this embodiment, the processing liquid W2 is DIW. Compared to the processing liquid W1, which is a phosphoric acid solution used for etching the substrate S, the DIW does not require high temperature control accuracy. Therefore, it is particularly suitable to provide the heat exchange area A of this embodiment when the processing liquid W2, like the DIW, does not require higher temperature control accuracy than the processing liquid W1 but is controlled to a temperature higher than room temperature. Depending on the type of the processing liquid W2, the processing liquid W2 that is not supplied to the substrate S in the processing unit 2 may be discarded without being collected in the supply tank 6.

[0079] (7) In the heat exchange area A of the present embodiment, the return pipes 35, 65 are arranged approximately in parallel. With a simple configuration in which two pipes are arranged in parallel, the temperature of the processing liquid W1 flowing through the return pipe 35 can be made lower than the temperature of the processing liquid W1 when it is supplied to the substrate S in the processing unit 2. This makes it easy to adjust the temperature of the processing liquid W1 flowing through the processing liquid circulation line L1, and makes it possible to stabilize the temperature of the processing liquid W1 supplied to the substrate S.

[0080] (8) In this embodiment, the treatment liquid W1 is a phosphoric acid solution containing silica.

[0081] When the processing liquid W1 is a phosphoric acid solution containing silica, if the temperature of the processing liquid W1 in the return pipe 35 drops significantly locally near the heat exchange area A, the silica dissolved in the phosphoric acid solution may precipitate in the return pipe 35, which may cause clogging in the pipe or particles. In this embodiment, the processing liquid W2 has a lower temperature than the phosphoric acid solution, but is higher than room temperature. Therefore, the heat exchange area A can prevent a sudden drop in the temperature of the processing liquid W1 flowing through the return pipe 35. This can prevent the silica contained in the processing liquid W1, which is a phosphoric acid solution, from precipitating.

[0082] [Second embodiment] [2-1. Configuration] The second embodiment will be described with reference to FIG. 4. In the second embodiment, differences from the first embodiment will be described, and other descriptions will be omitted. In the first embodiment, the return pipes 35 of the processing liquid W1 merged to become one pipe at the junction 36d between each processing unit 2 and the heat exchange area A, but in the second embodiment, the return pipes 35 extending from the processing unit 201 do not merge with the return pipes 35 extending from the processing unit 202, and each return pipe 35 is connected to the supply tank 3 via the heat exchange area A. FIG. 4 is a schematic diagram showing the configuration of a substrate processing apparatus 100 in the second embodiment.

[0083] 4, in the heat exchange area A, two return pipes 35 for the processing liquid W1 are in contact with one return pipe 65. In the heat exchange area A, for example, the return pipe 65 is disposed in the center, and the two return pipes 35 are disposed around it.

[0084] [2-2. Effects] Also in this embodiment, the heat exchange area A is provided, thereby making it possible to stabilize the temperature of the processing liquid W1 supplied to the substrate S. Furthermore, according to the configuration of this embodiment, each of the return pipes 35 extending from the processing units 201, 202 exchanges heat with the return pipe 65 of the processing liquid circulation line L2 in the heat exchange area A.

[0085] Since multiple return pipes 35 are installed around one return pipe 65, the contact area between the return pipes 35, 65 becomes large, and it becomes possible to efficiently transfer the heat of the processing liquid W1 to the processing liquid W2. Furthermore, since multiple return pipes 35 are provided, natural heat dissipation from the entire return pipes 35 also increases. Therefore, the temperature of the processing liquid W1 can be efficiently lowered.

[0086] [Third embodiment] [3-1. Configuration] The third embodiment will be described with reference to FIG. 5. In the third embodiment, differences from the first embodiment will be described, and other descriptions will be omitted. In the first embodiment, the circulation pipe 33 is provided with the same number of branches as the processing sections 2 (two branches 36a, 36b in FIG. 1), and the supply pipe 34 is connected to the branched portion to supply the processing liquid W1 to the processing sections 201, 202. On the other hand, in the third embodiment, one branch 36a is provided in the middle of the circulation pipe 33 to connect the supply pipe 34. The supply pipe 34 is provided with a number of branches 36e that is one less than the number of processing sections 2 (one in FIG. 5). As a result, the supply pipe 34 is branched in accordance with the number of processing sections 2. In FIG. 5, the supply pipe 34 is branched into supply pipes 34a, 34b corresponding to the two processing sections 201, 202.

[0087] The supply pipe 34a supplies the processing liquid W1 to the processing section 201. The supply pipe 34b supplies the processing liquid W1 to the processing section 202. A valve 70a is provided in the supply pipe 34a, and a valve 70b is provided in the supply pipe 34b. The supply of the processing liquid W1 to the processing section 201 is controlled by opening and closing the valve 70a. The supply of the processing liquid W1 to the processing section 202 is controlled by opening and closing the valve 70b.

[0088] In the first embodiment, the circulation pipe 63 is configured to have a return pipe 65 extending from the branch 67 disposed at the most downstream side of the circulation pipe 63 to the supply tank 6 with respect to the flow of the processing liquid W2. Meanwhile, in the third embodiment, the circulation pipe 63 extends from the supply tank 6 to the vicinity of the processing units 201, 202 and is connected to the supply tank 6 again. One end of the return pipe 65 is connected to the supply pipes 64 (64a, 64b) and the other end is connected to the supply tank 6.

[0089] One branch 69 is provided midway through the circulation pipe 63. At the branch 69, the supply pipe 64 is connected. The supply pipe 64 is provided with branches 71, the number of which is one less than the number of processing sections 2 (one in FIG. 5). In this way, the supply pipe 64 branches out in accordance with the number of processing sections 2. In FIG. 5, the supply pipe 64 branches out into supply pipes 64a and 64b, corresponding to the two processing sections 201 and 202.

[0090] The supply pipe 64a supplies the processing liquid W2 to the processing section 201. The supply pipe 64b for the processing liquid W2 supplies the processing liquid W2 to the processing section 202. A valve 75a is provided in the supply pipe 64a, and a valve 75b is provided in the supply pipe 64b. The supply of the processing liquid W2 to the processing section 201 is controlled by opening and closing the valve 75a. The supply of the processing liquid W2 to the processing section 202 is controlled by opening and closing the valve 75b. A branch 72a is provided in the supply pipe 64a, and a return pipe 65a is connected to the branch 72a.

[0091] A branch 72b is provided midway through the supply pipe 64b, and a return pipe 65b is connected to the branch 72b. The return pipe 65a merges with the return pipe 65b at a junction 74 to form the return pipe 65. The return pipe 65 passes through the heat exchange area A and reaches the supply tank 6. That is, in this embodiment, the return pipe 65 (65a, 65b) is connected midway through the supply pipe 64 (64a, 64b), and is provided so as to return the processing liquid W2 that has not been supplied to the substrate S to the supply tank 3. In this embodiment, the valve 68 is disposed inside the chamber 2a of the processing unit 2.

[0092] [3-2. Effects] In this embodiment as well, the heat exchange area A is provided, thereby making it possible to stabilize the temperature of the processing liquid W1 supplied to the substrate S. Furthermore, in this embodiment, in the processing liquid circulation line L1, the supply pipe 34 is branched into a supply pipe 34a and a supply pipe 34b in accordance with the number of processing units 2 (201, 202). Also, in the processing liquid circulation line L2, the supply pipe 64 is branched into a supply pipe 64a and a supply pipe 64b in accordance with the number of processing units 2 (201, 202).

[0093] This makes it possible to easily control the flow rates of the processing liquids W1 and W2 supplied to each processing unit 2. Furthermore, by closing the valves 70a and 75a, the processing liquids W1 and W2 can be prevented from being supplied to the processing unit 201. Similarly, by closing the valves 70b and 75b, the processing liquids W1 and W2 can be prevented from being supplied to the processing unit 202. This makes it possible to operate the substrate processing apparatus 100 by stopping the operation of only one of the processing units 201 or 202 among the multiple processing units 2. For example, when maintenance of the processing unit 201 is required, the processing unit 202 can continue processing the substrate S while stopping the operation of the processing unit 201. Therefore, the processing efficiency of the substrate S by the substrate processing apparatus 100 can be improved.

[0094] [Variations] The above embodiment can also be modified as follows.

[0095] (1) Although the processing unit 2 has been described as being provided with two processing units 201 and 202, the number of processing units 2 is not limited to two. Only one processing unit 2 may be provided, or three or more processing units 2 may be provided.

[0096] (2) A sensor for detecting the level of the processing liquid W1 in the supply tank 3 may be provided in the supply tank 3. When the substrate processing control unit 51 determines through the sensor that the level of the processing liquid W1 in the supply tank 3 has fallen below a predetermined range, it controls the pump 42 to supply the processing liquid W1 from the adjustment tank 4 so that the level of the processing liquid W1 in the supply tank 3 falls within the predetermined range.

[0097] (3) In the second embodiment, the return pipes 35 extending from the processing sections 2 may be joined at a location downstream of the heat exchange area A and then connected to the supply tank 3.

[0098] [Other embodiments] Although the embodiment of the present invention and the modified examples of each part have been described above, these embodiments and the modified examples of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are included in the invention described in the claims. [Explanation of symbols]

[0099] 100 Substrate processing apparatus 1 Processing liquid supply device 2, 201, 202 Processing section 2a Chamber 2a1 opening 2b Rotation drive unit 2c Processing liquid discharge section 2c1, 2c2 nozzle 2d heating section 2e Processing liquid recovery section 3. Supply Tank 31 Heater 32 Pump 33 Circulation piping 33a Valve 34, 34a, 34b supply piping 35 Return pipe 36a, 36b, 36c, 36e Branch 36d Confluence 37 Heater 38a, 38b valve 4. Adjustment tank 41 Heater 42 Pump 5. Control device 51 Substrate processing control section 52, 53 Temperature control unit 54 Storage section 6. Supply Tank 60a1, 60a2 outlet 61 Heater 62 Pump 63 Circulation piping 63a Valve 64, 64a, 64b Supply pipes 65, 65a, 65b Return pipe 66, 67, 69, 71, 72a, 72b Branch 68, 70a, 70b valves 71, 72a, 72b, 73a, 75a, 75b valves 74 Junction A Heat exchange area L1, L2 Processing liquid circulation line S-substrate T1, T2 target temperature W1, W2 treatment solution

Claims

1. A substrate processing apparatus including a processing section for processing a substrate, the processing section including a processing liquid supplying device for supplying a first processing liquid and a second processing liquid having a temperature lower than that of the first processing liquid to the substrate carried into the processing section, the processing liquid supplying device includes a first processing liquid circulation line for supplying the first processing liquid to the substrate, and a second processing liquid circulation line for supplying the second processing liquid to the substrate; the first processing liquid circulation line includes a first return pipe that circulates the first processing liquid that has not been supplied to the substrate in the processing section; the second processing liquid circulation line includes a second return pipe that circulates the second processing liquid that has not been supplied to the substrate in the processing section, The substrate processing apparatus further comprises a heat exchange area for performing heat exchange between the first return pipe and the second return pipe.

2. The first processing solution circulation line further comprises: a first supply pipe that supplies the first processing liquid to a nozzle that ejects the first processing liquid onto the substrate in the processing section; a first heating unit provided in the first supply pipe and configured to heat the first processing liquid flowing through the first supply pipe; 2. The substrate processing apparatus according to claim 1, further comprising:

3. The first processing solution circulation line further comprises: a first supply tank that stores the first processing liquid; a second heating unit that adjusts a temperature of the first processing liquid in the first supply tank; 3. The substrate processing apparatus according to claim 2, further comprising:

4. The processing section includes a chamber for processing the substrate, 3. The substrate processing apparatus according to claim 2, wherein the first heating section is provided within the chamber.

5. The processing unit includes a plurality of the processing units, a circulation pipe connected to the first supply tank and circulating the first processing liquid; The first supply pipe has one end that is branched off from the middle of the circulation pipe and connected thereto, and the other end that is connected to the nozzles of the plurality of processing units; 4. The substrate processing apparatus according to claim 3, wherein the first return pipe is connected to the first supply tank and returns the first processing liquid that has not been supplied to the substrate in the processing section into the first supply tank.

6. The first return pipe is provided in plurality for each of the plurality of processing sections, 6. The substrate processing apparatus according to claim 5, wherein in the heat exchange area, heat exchange is performed between a plurality of the first return pipes and the second return pipe.

7. The second processing solution circulation line further comprises: a second supply tank for storing the second processing liquid; a third heating unit that adjusts a temperature of the second processing liquid in the second supply tank; a second supply pipe that supplies the second processing liquid in the supply tank to a nozzle that ejects the second processing liquid onto the substrate in the processing section; Equipped with 4. The substrate processing apparatus according to claim 3, wherein the second processing liquid in the second supply tank is adjusted by the third heating unit to a temperature higher than room temperature and lower than a temperature of the first processing liquid in the first supply tank.

8. The substrate processing apparatus according to claim 1 , wherein in the heat exchange area, the first return pipe and the second return pipe are disposed substantially in parallel.

9. 8. The substrate processing apparatus according to claim 7, wherein the first processing liquid is a phosphoric acid solution containing silica.

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