Laminate

Abstract

To provide a laminate having a transparent conductive layer having both comparatively low specific resistance and excellent adhesion to an underlying layer.SOLUTION: A laminate 1 includes an underlying layer 3, and a crystalline transparent conductive layer 4 arranged on one side in a thickness direction of the underlying layer 3. The underlaying layer 3 contains a resin. One surface 41 in the thickness direction of the transparent conductive layer 4 includes a plurality of first protrusions 42 having heights of 3 nm or more. One surface 31 of the underlying layer 3 includes at least one second protrusion 32 having a height of 3 nm or more. The first protrusion 42 includes at least one non-overlapping first protrusion 47 which does not overlap the second protrusion 32 when being projected in the thickness direction. The first protrusion 42 includes at least one overlapping first protrusion 48 which overlaps the second protrusion 32 when being projected in the thickness direction.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a laminate. [Background technology]

[0002] A laminate including an underlayer and a crystalline transparent conductive layer disposed on one side of the underlayer is known (see, for example, Patent Document 1 below). In the laminate described in Patent Document 1, one surface in the thickness direction of the transparent conductive layer has a first protuberance. One surface in the thickness direction of the underlayer has a second protuberance. The second protuberance of the underlayer overlaps with the first protuberance of the transparent conductive layer when projected in the thickness direction.

[0003] In the manufacture of the laminate of Patent Document 1, a second protuberance corresponding to the shape of the particles is formed on the underlayer by applying a resin composition containing the particles, and a thin film is formed on one surface in the thickness direction of the underlayer to form a first protuberance following the second protuberance on the transparent conductive layer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2017-122992 A Summary of the Invention [Problem to be solved by the invention]

[0005] The transparent conductive layer is made crystalline by heating the amorphous transparent conductive layer. However, in the laminate of Patent Document 1, due to the above-mentioned second protuberance, the orientation of the crystals is difficult to align during crystallization of the amorphous transparent conductive layer, that is, the growth of the crystals is inhibited, and therefore, there is a problem that the resistivity of the crystallized transparent conductive layer becomes high.

[0006] On the other hand, in order to prevent the resistivity from increasing, it is also considered to not form the above-mentioned second protuberances by using a resin composition that does not contain particles in forming the base layer. However, if the second protuberances are not formed, there is a problem that the adhesion between the base layer and the transparent conductive layer is insufficient.

[0007] The present invention is a laminate comprising a transparent conductive layer that combines a relatively low resistivity with excellent adhesion to an underlying layer. [Means for solving the problem]

[0008] The present invention [1] includes a laminate comprising an underlayer and a crystalline transparent conductive layer arranged on one side of the underlayer in a thickness direction, wherein the underlayer contains a resin, one side of the transparent conductive layer in the thickness direction has a plurality of first protrusions having a height of 3 nm or more, and the one side of the underlayer has at least one second protrusion having a height of 3 nm or more, and the first protrusions include at least one non-overlapping first protrusion that does not overlap the second protrusions when projected in the thickness direction, and at least one overlapping first protrusion that overlaps the second protrusion when projected in the thickness direction.

[0009] The present invention [2] includes the laminate described in [1] above, wherein the overlapping first ridge has at least one specific growth type-overlapping first ridge, and the specific growth type-overlapping first ridge has a height greater than the height of the second ridge it overlaps when projected in the thickness direction.

[0010] The present invention [3] includes the laminate according to the above [1] or [2], in which the material of the transparent conductive layer is an indium tin composite oxide. Effect of the Invention

[0011] In the laminate of the present invention, the transparent conductive layer includes a first protuberance, and the underlayer includes a second protuberance. The first protuberance includes a non-overlapping first protuberance that does not overlap the second protuberance when projected in the thickness direction. Therefore, the transparent conductive layer has a relatively low resistivity. Furthermore, the first protuberance includes an overlapping first protuberance that overlaps the second protuberance when projected in the thickness direction. Therefore, the transparent conductive layer has excellent adhesion to the underlayer.

[0012] That is, the laminate of the present invention comprises a transparent conductive layer that has both a relatively low resistivity and excellent adhesion to the underlayer. [Brief description of the drawings]

[0013] [Figure 1] 1 is a schematic cross-sectional view of one embodiment of a laminate of the present invention. [Diagram 2] FIG. 2 is a schematic cross-sectional view of another embodiment of the laminate of the present invention. [Diagram 3] FIG. 3 is a reference cross-sectional view of a laminate having no non-overlapping first ridges. [Figure 4] FIG. 4 is a reference cross-sectional view of a laminate having no second protuberance. [Diagram 5] FIG. 5 is a graph showing the relationship between the amount of oxygen introduced and the resistivity in the first reactive sputtering process. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0014] 1. One embodiment of the laminate One embodiment of the laminate of the present invention will be described with reference to FIG.

[0015] The laminate 1 extends in a surface direction. The surface direction is perpendicular to the thickness direction. The laminate 1 has, for example, a substantially rectangular shape in a plan view. A plan view refers to a view in the thickness direction. More specifically, the laminate 1 has a sheet shape. The sheet includes a film. Note that the sheet and the film are not necessarily distinguished from each other.

[0016] In this embodiment, the laminate 1 includes a base layer 2, an undercoat layer 3, and a transparent conductive layer 4, in that order toward one side in the thickness direction. Specifically, the laminate 1 includes a base layer 2, an undercoat layer 3 disposed on one surface 21 in the thickness direction of the base layer 2, and a transparent conductive layer 4 disposed on one surface 31 in the thickness direction of the undercoat layer 3. As shown in Fig. 1, in this embodiment, two layers adjacent to each other in the thickness direction are adjacent to each other.

[0017] 1.1 Base material layer 2 The substrate layer 2 is disposed on the opposite side of the underlayer 3 to the transparent conductive layer 4 in the thickness direction. The substrate layer 2 has a sheet shape. The substrate layer 2 is preferably transparent.

[0018] An example of the material of the base layer 2 is a resin. In other words, the base layer 2 contains a resin. Examples of the resin include polyester resin, acrylic resin, olefin resin, polycarbonate resin, polyethersulfone resin, polyarylate resin, melamine resin, polyamide resin, polyimide resin, cellulose resin, polystyrene resin, and norbornene resin. In terms of transparency and mechanical strength, a preferable example of the resin is a polyester resin. Examples of the polyester resin include polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate, and preferably PET. The thickness of the base layer 2 is, for example, 5 to 500 μm, preferably 10 to 200 μm, and more preferably 10 to 125 μm. The lower limit of the thickness of the base layer 2 is, for example, 5 μm or more, and preferably 10 μm or more. The upper limit of the thickness of the base layer 2 is, for example, 500 μm or less, preferably 200 μm or less, and more preferably 125 μm or less.

[0019] One surface 21 in the thickness direction of the base layer 2 may have a third protrusion (not shown) having a height of 3 nm or more. The height of the third protrusion (not shown) is determined in the same manner as the height of the first protrusion 42 described later. The positions and number of the third protrusions (not shown) in a plan view are not limited.

[0020] The total light transmittance of the base layer 2 is, for example, 40 to 100%, preferably 70 to 100%, more preferably 80 to 100%, and even more preferably 85 to 100%. The lower limit of the total light transmittance of the base layer 2 is, for example, 40% or more, preferably 70% or more, more preferably 80% or more, and even more preferably 85% or more. The upper limit of the total light transmittance of the base layer 2 is, for example, 100% or less. The total light transmittance is determined based on JIS K 7375-2008 (the same applies below).

[0021] 1.2 Base layer 3 The underlayer 3 is disposed on one side in the thickness direction of the base layer 2. In FIG. 1, the underlayer 3 is adjacent to one surface of the base layer 2. Specifically, the underlayer 3 contacts one surface 21 in the thickness direction of the base layer 2. The underlayer 3 is preferably transparent. Examples of the underlayer 3 include an optical adjustment layer and a hard coat layer. The underlayer 3 is a single layer (single layer) or multiple layers, and is preferably a single layer.

[0022] The underlayer 3 has, for example, a sheet shape. The underlayer 3 has a protuberance (hereinafter, a second protuberance) 32 on one surface 31 side.

[0023] More specifically, one surface 31 of the underlayer 3 has at least one second protrusion 32 having a height of 3 nm or more, and a second flat portion 33 (a non-protruding portion).

[0024] The second flat portion 33 is a portion on one surface 31 of the underlayer 3 where the second protrusion 32 is not formed.

[0025] The second protuberance 32 is a convex portion that protrudes from the other side to the one side in the thickness direction on one surface 31 of the underlayer 3. The number of the second protuberance 32 may be one or more. From the viewpoint of adhesion, the number of the second protuberances 32 is preferably more than one. Two second protuberances 32 are shown in FIG. 1.

[0026] There is no particular limitation on the shape of the second protuberance 32. As an example, a hemispherical second protuberance 32 is shown in FIG.

[0027] More specifically, the second bulge 32 includes, for example, a second bulge starting portion 35 and a second peak 36. The second bulge starting portion 35 is a portion where the second bulge 32 starts to bulge from the second flat portion 33. The second peak 36 is a portion located on the furthest side in the thickness direction of the base layer 3 (second bulge 32).

[0028] The height of the second ridge 32 is measured based on the second ridge starting portion 35 and the second apex 36. More specifically, the height of the second ridge 32 is the length from the apex to a drooping point obtained by drooping from the second apex 36 along the thickness direction with respect to a line segment connecting the two second ridge starting portions 35. The height of the second ridge 32 is measured, for example, by observing a cross section of the base layer 3 with a TEM.

[0029] The height of the second protuberance 32 is not particularly limited as long as it is 3 nm or more. For example, the height (average) of the second protuberance 32 is 4 to 50 nm, preferably 5 to 40 nm, more preferably 6 to 30 nm, even more preferably 10 to 20 nm, and particularly preferably 13 to 17 nm. The lower limit of the height (average) of the second protuberance 32 is, for example, 4 nm or more, preferably 5 nm or more, more preferably 6 nm or more, even more preferably 10 nm or more, and particularly preferably 13 nm or more. The upper limit of the height (average) of the second protuberance 32 is, for example, 50 nm or less, preferably 40 nm or less, more preferably 30 nm or less, even more preferably 20 nm or less, and particularly preferably 17 nm or less.

[0030] Examples of materials for the underlayer 3 include resin and particles. That is, the underlayer 3 contains resin and particles. Preferably, the underlayer 3 is made of resin and particles.

[0031] Examples of the resin include polyester resin, acrylic resin, urethane resin, melamine resin, alkyd resin, and silicone resin. If the raw material of the resin is a curable resin, the undercoat layer 3 is formed as a cured film.

[0032] Examples of the particles include resin particles and inorganic oxide particles. Examples of the resin particles include acrylic particles. Examples of the inorganic oxide particles include zirconia particles, alumina particles, and silica particles. Examples of the particles include preferably inorganic oxide particles, more preferably silica particles. The particle diameter of the particles is, for example, 3 to 100 nm, preferably 10 to 50 nm. The lower limit of the particle diameter of the particles is, for example, 3 nm or more, preferably 10 nm or more. The upper limit of the particle diameter of the particles is, for example, 100 nm or less, preferably 50 nm or less.

[0033] The method for forming the underlayer 3 is not particularly limited. For example, a composition containing a resin and particles is prepared, and then the resin composition is applied to the base layer 2 and dried. If necessary, the resin is cured. As a result, the underlayer 3 containing the resin and particles is formed on one side of the base layer 2 in the thickness direction.

[0034] The thickness (average thickness) of the underlayer 3 is, for example, 5 to 10,000 nm, or preferably 10 to 5,000 nm. The lower limit of the thickness (average thickness) of the underlayer 3 is, for example, 5 nm or more, or preferably 10 nm or more. The upper limit of the thickness (average thickness) of the underlayer 3 is, for example, 10,000 nm or less, or preferably 5,000 nm or less. The thickness of the underlayer 3 is the length of the second flat portion 33 in the thickness direction. The thickness of the underlayer 3 is measured by TEM observation (cross-sectional observation).

[0035] The total light transmittance of the underlayer 3 is, for example, 70 to 100%, preferably 80 to 100%, and more preferably 85 to 100%. The lower limit of the total light transmittance of the underlayer 3 is, for example, 70% or more, preferably 80% or more, and more preferably 85% or more. The upper limit of the total light transmittance of the underlayer 3 is, for example, 100% or less.

[0036] The laminate of the base layer 2 and the underlayer 3 may be referred to as the base 30. That is, the base 30 includes the base layer 2 and the underlayer 3 in this order toward one side in the thickness direction. The base 30 is preferably transparent. Therefore, the base 30 may be referred to as the transparent base 30.

[0037] The surface direction of the substrate 30 includes the direction in which the substrate 30 is thermally contracted after being heated. The heating temperature can be selected depending on the heat resistance of the substrate 30. The thermal shrinkage rate in the thermal shrinkage direction is not particularly limited. For example, from the viewpoint of crack resistance, the thermal shrinkage rate after the substrate 30 is heated at 160°C for 1 hour is, for example, 0.01 to 1.0%, preferably 0.05 to 0.5%. The lower limit of the thermal shrinkage rate is, for example, 0.01% or more, preferably 0.05% or more. The upper limit of the thermal shrinkage rate is, for example, 1.0% or less, preferably 0.5% or less.

[0038] 1.3 Transparent conductive layer 4 The transparent conductive layer 4 is adjacent to one side in the thickness direction of the underlayer 3. Specifically, the transparent conductive layer 4 is in contact with one surface 31 in the thickness direction of the underlayer 3. The transparent conductive layer 4 forms one surface in the thickness direction of the laminate 1. The transparent conductive layer 4 has a sheet shape extending in the planar direction. In this embodiment, the transparent conductive layer 4 is a single layer.

[0039] The transparent conductive layer 4 has, for example, a sheet shape. The transparent conductive layer 4 has a protuberance (hereinafter, a first protuberance) 42 on one surface 41 side.

[0040] More specifically, one surface 41 in the thickness direction of the transparent conductive layer 4 has a plurality of first protrusions 42 each having a height of 3 nm or more, and a first flat portion 43 (a non-protruding portion).

[0041] The first flat portion 43 is a portion on one surface 41 of the transparent conductive layer 4 where the first protrusion 42 is not formed.

[0042] The first protrusions 42 are convex portions that protrude from the other side to the one side in the thickness direction on one surface 41 of the transparent conductive layer 4. There are a plurality of first protrusions 42. Three first protrusions 42 are shown in FIG.

[0043] There is no particular limitation on the shape of the first protrusion 42. As an example, a hemispherical first protrusion 42 is shown in FIG.

[0044] More specifically, the first protuberance 42 includes, for example, a first protuberance starting portion 45 and a first apex 46. The first protuberance starting portion 45 is a portion where the first protuberance 42 starts to protrude from the first flat portion 43. The first apex 46 is a portion located closest to one side in the thickness direction of the transparent conductive layer 4 (first protuberance 42).

[0045] The height of the first ridge 42 is measured based on the first ridge starting portion 45 and the first apex 46. More specifically, the height of the first ridge 42 is the length from the apex to the drooping point when the drooping point is obtained by drooping from the first apex 46 along the thickness direction with respect to a line segment connecting the two first ridge starting portions 45. The height of the first ridge 42 is measured, for example, by observing the cross section of the transparent conductive layer 4 with a TEM.

[0046] The height of the first protuberances 42 is not particularly limited as long as it is 3 nm or more. For example, the height (average) of the first protuberances 42 is 3 to 50 nm, preferably 4 to 40 nm, more preferably 5 to 30 nm, even more preferably 6 to 28 nm, and particularly preferably 7 to 25 nm. The lower limit of the height (average) of the first protuberances 42 is, for example, 3 nm or more, preferably 4 nm or more, more preferably 5 nm or more, even more preferably 6 nm or more, and particularly preferably 7 nm or more. The upper limit of the height (average) of the first protuberances 42 is, for example, 50 nm or less, preferably 40 nm or less, more preferably 30 nm or less, even more preferably 28 nm or less, and particularly preferably 25 nm or less.

[0047] The first protuberances 42 are classified into overlapping first protuberances 47 and non-overlapping first protuberances 48 depending on whether or not they overlap with the second protuberances 32 in the thickness direction.

[0048] 1, the first ridge 42 includes at least one overlapping first ridge 47 that overlaps with the second ridge 32 when projected in the thickness direction. Also, the first ridge 42 includes at least one non-overlapping first ridge 48 that does not overlap with the second ridge 32 when projected in the thickness direction.

[0049] The overlapping first protuberance 47 is a protuberance that overlaps with the second protuberance 32 in the thickness direction of the laminate 1. In other words, in the thickness direction of the laminate 1, the projected surface of the overlapping first protuberance 47 has a portion that overlaps with the projected surface of the second protuberance 32.

[0050] There is no particular limitation on the method for forming the overlapping first protrusion 47. For example, by forming a transparent conductive layer 4 on one side of the second protrusion 32 by a known method, the overlapping first protrusion 47 corresponding to the shape of the second protrusion 32 can be formed.

[0051] The height of the overlapping first ridge 47 is not particularly limited as long as it is 3 nm or more. For example, the height of the overlapping first ridge 47 and the height of the second ridge 32 that overlaps the overlapping first ridge in the thickness direction may be approximately the same or may be different from each other.

[0052] More specifically, when the transparent conductive layer 4 is uniformly formed on one side in the thickness direction of the second protuberance 32, the overlapping first protuberance 47 is formed due to the second protuberance 32 overlapping in the thickness direction. Therefore, the height of the second protuberance 32 and the height of the overlapping first protuberance 47 are approximately the same. Hereinafter, when the overlapping first protuberance 47 has a height approximately the same as the height of the second protuberance 32 that overlaps when projected in the thickness direction, the overlapping first protuberance 47 may be referred to as a uniform type overlapping first protuberance 47A.

[0053] On the other hand, for example, when the crystal growth of the transparent conductive layer 4 occurs so as to protrude in a specific direction, the transparent conductive layer 4 is not formed uniformly on one side of the second protuberance 32 in the thickness direction. In such a case, the overlapping first protuberance 47 is formed by the crystal growth in addition to being formed due to the second protuberance 32 overlapping in the thickness direction. That is, the height of the overlapping first protuberance 47 is the sum of the height due to the second protuberance 32 and the height due to the growth in the specific direction. As a result, the height of the overlapping first protuberance 47 becomes larger than the height of the second protuberance 32. In the following, when the overlapping first protuberance 47 has a height larger than the height of the second protuberance 32 overlapping when projected in the thickness direction, the overlapping first protuberance 47 may be referred to as a specific growth type-overlapping first protuberance 47B.

[0054] From the viewpoint of reducing the resistance value, the overlapping first protuberances 47 preferably include at least one specific growth type-overlapping first protuberance 47B.

[0055] From the viewpoint of scratch resistance, it is more preferable that the overlapping first protuberances 47 have both the uniform type overlapping first protuberances 47A and the specific growth type overlapping first protuberances 47B.

[0056] The height (average) of the specific growth type-overlapping first protuberance 47B is greater than the height of the second protuberance 32 that overlaps the specific growth type-overlapping first protuberance 47B in the thickness direction. The height (average) of the specific growth type-overlapping first protuberance 47B is, for example, 4 to 50 nm, preferably 8 to 40 nm, more preferably 10 to 30 nm, even more preferably 15 to 28 nm, and particularly preferably 18 to 25 nm. The lower limit of the height (average) of the specific growth type-overlapping first protuberance 47B is, for example, 4 nm or more, preferably 8 nm or more, more preferably 10 nm or more, even more preferably 15 nm or more, and particularly preferably 18 nm or more. The upper limit of the height (average) of the specific growth type-overlapping first protuberance 47B is, for example, 50 nm or less, preferably 40 nm or less, more preferably 30 nm or less, even more preferably 28 nm or less, and particularly preferably 25 nm or less.

[0057] From the viewpoint of reducing the resistivity, the difference (average) between the height (average) of the specific growth type-overlapping first protuberance 47B and the height (average) of the second protuberance 32 overlapping the overlapping first protuberance in the thickness direction is, for example, 1 to 20 nm, preferably 2 to 10 nm, more preferably 3 to 8 nm. The lower limit of the difference (average) between the height (average) of the specific growth type-overlapping first protuberance 47B and the height (average) of the second protuberance 32 is, for example, 1 nm or more, preferably 2 nm or more, more preferably 3 nm or more. The upper limit of the difference (average) between the height (average) of the specific growth type-overlapping first protuberance 47B and the height (average) of the second protuberance 32 is, for example, 20 nm or less, preferably 10 nm or less, more preferably 8 nm or less.

[0058] The height (average) of the uniform-overlapping first protuberance 47A is approximately the same as the height of the second protuberance 32 that overlaps the uniform-overlapping first protuberance 47A in the thickness direction. The height (average) of the uniform-overlapping first protuberance 47A is, for example, 4 to 50 nm, preferably 5 to 40 nm, more preferably 6 to 30 nm, even more preferably 10 to 20 nm, and particularly preferably 14 to 17 nm. The lower limit of the height (average) of the uniform-overlapping first protuberance 47A is, for example, 4 nm or more, preferably 5 nm or more, more preferably 6 nm or more, even more preferably 10 nm or more, and particularly preferably 14 nm or more. The upper limit of the height (average) of the uniform-overlapping first protuberance 47A is, for example, 50 nm or less, preferably 40 nm or less, more preferably 30 nm or less, even more preferably 20 nm or less, and particularly preferably 17 nm or less.

[0059] The height (average) of the uniform-overlapping first protuberance 47A may be smaller than the height (average) of the second protuberance 32 that overlaps the uniform-overlapping first protuberance 47A in the thickness direction. In this case, the difference (average) between the height (average) of the uniform-overlapping first protuberance 47A and the height (average) of the second protuberance 32 that overlaps the uniform-overlapping first protuberance 47A in the thickness direction is, for example, 1 to 20 nm, preferably 2 to 10 nm, and more preferably 3 to 8 nm. The lower limit of the difference (average) between the height (average) of the uniform-overlapping first protuberance 47A and the height (average) of the second protuberance 32 that overlaps the uniform-overlapping first protuberance 47A in the thickness direction is, for example, 1 nm or more, preferably 2 nm or more, and more preferably 3 nm or more. In addition, the upper limit of the difference (average) between the height (average) of the uniform-overlapping first protuberance 47A and the height (average) of the second protuberance 32 that overlaps with the uniform-overlapping first protuberance 47A in the thickness direction is, for example, 20 nm or less, preferably 10 nm or less, and more preferably 8 nm or less.

[0060] The difference (average) between the height (average) of the uniform-overlapping first protuberance 47A and the height (average) of the specific growth type-overlapping first protuberance 47B is, for example, 1 to 20 nm, preferably 2 to 10 nm, and more preferably 3 to 8 nm. The lower limit of the difference (average) between the height (average) of the uniform-overlapping first protuberance 47A and the height (average) of the specific growth type-overlapping first protuberance 47B is, for example, 1 nm or more, preferably 2 nm or more, and more preferably 3 nm or more. The upper limit of the difference (average) between the height (average) of the uniform-overlapping first protuberance 47A and the height (average) of the specific growth type-overlapping first protuberance 47B is, for example, 20 nm or less, preferably 10 nm or less, and more preferably 8 nm or less.

[0061] The non-overlapping first protrusion 48 is a protrusion that does not overlap with the second protrusion 32 in the thickness direction of the laminate 1. In other words, in the thickness direction of the laminate 1, the projected surface of the non-overlapping first protrusion 48 does not have a portion that overlaps with the projected surface of the second protrusion 32.

[0062] There is no particular limitation on the method for forming the non-overlapping first protrusions 48. For example, when forming the transparent conductive layer 4 on one side of the second protrusion 32, the formation conditions can be appropriately adjusted to control the crystal growth of the transparent conductive layer 4, thereby forming the non-overlapping first protrusions 48.

[0063] There is no particular limitation on the shape of the non-overlapping first protuberances 48. As an example, a hemispherical non-overlapping first protuberance 48 is shown in FIG.

[0064] The height of the non-overlapping first protuberance 48 is not particularly limited as long as it is 3 nm or more. For example, the height of the non-overlapping first protuberance and the height of the overlapping first protuberance may be approximately the same or may be different from each other. For example, the height of the non-overlapping first protuberance 48 is 3 to 40 nm, preferably 4 to 30 nm, more preferably 5 to 20 nm, even more preferably 6 to 15 nm, and particularly preferably 7 to 13 nm. The lower limit of the height of the non-overlapping first protuberance 48 is 3 nm or more, preferably 4 nm or more, more preferably 5 nm or more, even more preferably 6 nm or more, and particularly preferably 7 nm or more. The upper limit of the height of the non-overlapping first protuberance 48 is 40 nm or less, preferably 30 nm or less, more preferably 20 nm or less, even more preferably 15 nm or less, and particularly preferably 13 nm or less.

[0065] There is no particular limitation on the method for forming the transparent conductive layer 4. For example, a metal oxide is sputtered onto the underlayer 3, and the sputtered metal oxide is heated. As a result, the transparent conductive layer 4 containing the metal oxide is formed on one side of the underlayer 3 in the thickness direction.

[0066] The metal oxide contains at least one metal selected from the group consisting of In, Sn, Zn, Ga, Sb, Nb, Ti, Si, Zr, Mg, Al, Au, Ag, Cu, Pd, and W.

[0067] More specifically, the material of the transparent conductive layer 4 preferably includes indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium gallium oxide (IGO), indium tin oxide (ITO), and antimony tin oxide (ATO), and from the viewpoint of reducing the resistivity, preferably, indium tin oxide (ITO) is used. That is, from the viewpoint of reducing the resistivity, the material of the transparent conductive layer 4 is preferably indium tin oxide (ITO).

[0068] The tin oxide (SnO2) content in the indium tin composite oxide is, for example, 0.5 mass% or more, preferably 3 mass% or more, more preferably 6 mass% or more, and for example, less than 50 mass%, preferably 25 mass% or less, more preferably 15 mass% or less.

[0069] The sputtering conditions and the heating conditions are appropriately adjusted so as to form the overlapping first protuberances 47 and the non-overlapping first protuberances 48. The details of the sputtering conditions and the heating conditions will be described later.

[0070] Furthermore, the transparent conductive layer 4 is crystalline. Preferably, the transparent conductive layer 4 does not include an amorphous region. Preferably, the transparent conductive layer 4 is composed of only a crystalline region.

[0071] Whether the transparent conductive layer 4 is crystalline or amorphous can be determined, for example, by the following test. The transparent conductive layer 4 is immersed in a 5% by mass aqueous hydrochloric acid solution for 15 minutes, washed with water and dried, and the two-terminal resistance over a distance of about 15 mm is measured on one side 41 of the transparent conductive layer 4. If the two-terminal resistance is 10 kΩ or less, the transparent conductive layer 4 is crystalline, and if the two-terminal resistance exceeds 10 kΩ, the transparent conductive layer 4 is amorphous. A crystalline transparent conductive layer 4 can have a sufficiently low resistivity.

[0072] The transparent conductive layer 4 has a thickness (average thickness) of, for example, 15 to 500 nm, preferably 35 to 400 nm, more preferably 50 to 300 nm, even more preferably 75 to 200 nm, even more preferably 80 to 200 nm, even more preferably 85 to 200 nm, even more preferably 90 to 200 nm, still more preferably 100 to 200 nm, and particularly preferably 120 to 200 nm. The lower limit of the thickness (average thickness) of the transparent conductive layer 4 is, for example, 15 nm or more, preferably 35 nm or more, more preferably 50 nm or more, even more preferably 75 nm or more, even more preferably 80 nm or more, even more preferably 85 nm or more, even more preferably 90 nm or more, still more preferably 100 nm or more, and particularly preferably 120 nm or more. The upper limit of the thickness (average thickness) of the transparent conductive layer 4 is, for example, 500 nm or less, preferably 400 nm or less, more preferably 300 nm or less, even more preferably 200 nm or less, even more preferably 200 nm or less, even more preferably 200 nm or less, still more preferably 200 nm or less, still more preferably 200 nm or less, and particularly preferably 200 nm or less. The thickness of the transparent conductive layer 4 (average thickness) is the length in the thickness direction of the first flat portion 43. The thickness of the transparent conductive layer 4 is measured, for example, by TEM observation (cross-sectional observation).

[0073] In particular, from the viewpoint of forming the non-overlapping first protuberances 48, the lower limit of the thickness (average thickness) of the transparent conductive layer 4 is preferably 35 nm or more, more preferably 50 nm or more, and even more preferably 75 nm or more. Furthermore, from the viewpoint of forming the specific growth type-overlapping first protuberances, the lower limit of the thickness (average thickness) of the transparent conductive layer 4 is more preferably 80 nm or more, even more preferably 85 nm or more, even more preferably 90 nm or more, even more preferably 100 nm or more, and especially preferably 120 nm or more.

[0074] The thickness (average thickness) of the transparent conductive layer 4 can be adjusted as desired, for example, by appropriately setting the sputtering time in the sputtering process described below.

[0075] The transparent conductive layer 4 has a total light transmittance of, for example, 60 to 100%, preferably 80 to 100%, and more preferably 85 to 100%. The lower limit of the total light transmittance of the transparent conductive layer 4 is, for example, 60% or more, preferably 80% or more, and more preferably 85% or more. The upper limit of the total light transmittance of the transparent conductive layer 4 is, for example, 100% or less.

[0076] The resistivity of one surface 41 in the thickness direction of the transparent conductive layer 4 is, for example, 3.0×10 -4 ~0.1×10 -4 Ω cm, preferably 2.5×10 -4 ~0.5×10 -4 Ω cm, more preferably 2.3×10 -4 ~1.0×10 -4 Ω cm, more preferably 2.2×10 -4 ~1.1×10 -4 Ω cm, and more preferably 2.0×10 -4 ~1.1×10 -4 Ω cm, particularly preferably 1.9×10 -4 ~1.1×10 -4 The lower limit of the resistivity of the one surface 41 of the transparent conductive layer 4 in the thickness direction is, for example, 0.1×10 -4 Ω cm or more, preferably 0.5×10 -4 Ω cm or more, more preferably 1.0×10 -4 Ω cm or more, more preferably 1.1×10 -4 The upper limit of the resistivity of one surface 41 in the thickness direction of the transparent conductive layer 4 is, for example, 3.0×10 -4 Ω cm or less, preferably 2.5×10 -4 Ω cm or less, more preferably 2.3×10 -4 Ω cm or less, more preferably 2.2×10 -4 Ω cm or less, more preferably 2.0×10 -4 Ω·cm or less, particularly preferably 1.9×10 -4 The resistivity is measured by the four-terminal method.

[0077] Next, a method for producing the laminate 1 will be described. In this method, each layer is arranged by a roll-to-roll method.

[0078] First, a long base layer 2 is prepared.

[0079] Next, a resin composition containing the above-mentioned resin and particles is applied to one surface 21 of the base layer 2. Thereafter, when the resin composition contains a curable resin, the curable resin is cured by heat or ultraviolet light irradiation. This forms the base layer 3 having the second protuberances 32. Also, the base material 30 having the base layer 2 and the base layer 3 in this order toward one side in the thickness direction is manufactured.

[0080] Thereafter, the transparent conductive layer 4 is formed on one surface 31 in the thickness direction of the underlayer 3. The method for forming the transparent conductive layer 4 includes, for example, a first step and a second step.

[0081] In the first step, the amorphous transparent conductive layer 40 is formed on one surface 31 in the thickness direction of the underlayer 3. For example, the amorphous transparent conductive layer 40 is formed on one surface 31 in the thickness direction of the underlayer 3 by sputtering (preferably reactive sputtering).

[0082] In the sputtering, a sputtering device is used. The sputtering device includes a film-forming roll. The film-forming roll includes a cooling device. The cooling device is capable of cooling the film-forming roll. The film-forming roll is capable of cooling the underlayer 3 (base material 30 including the underlayer 3).

[0083] In sputtering (preferably reactive sputtering), the above-mentioned metal oxide (sintered body) is used as a target. The surface temperature of the film-forming roll corresponds to the film-forming temperature in sputtering.

[0084] From the viewpoint of forming the first protrusion 42, the film formation temperature is, for example, -50 to 10.0°C, preferably -20 to 0.0°C, more preferably -10 to -2.5°C, further preferably -10 to -5.0°C, and particularly preferably -10 to -7.0°C.

[0085] In particular, from the viewpoint of forming the non-overlapping first protuberance 48, the upper limit of the film formation temperature is, for example, 10.0°C or less, preferably 0.0°C or less, more preferably -2.5°C or less, even more preferably -5.0°C or less, and even more preferably -7.0°C or less.

[0086] From the viewpoint of forming the specific growth type-overlapping first protuberance 47, the lower limit of the film formation temperature is, for example, −50° C. or higher, preferably −20° C. or higher, and more preferably −10° C. or higher.

[0087] The sputtering gas may be, for example, a rare gas. The rare gas may be, for example, Ar or Kr. The sputtering gas may be mixed with a reactive gas. The reactive gas may be, for example, oxygen.

[0088] From the viewpoint of forming the first protuberance 42, the ratio of the amount of reactive gas introduced to the total amount of sputtering gas and reactive gas introduced is, for example, 0.1 to 5 flow %, preferably 0.5 to 5 flow %, more preferably 1.5 to 3 flow %, even more preferably 2.0 to 3 flow %, and particularly preferably 2.5 to 3 flow %.

[0089] In particular, from the viewpoint of forming a non-overlapping first protuberance 48, the lower limit of the ratio of the amount of reactive gas introduced to the total amount of sputtering gas and reactive gas introduced is, for example, 0.1 flow% or more, preferably 0.5 flow% or more, more preferably 1.5 flow% or more, even more preferably 2.0 flow% or more, and particularly preferably 2.5 flow% or more.

[0090] In addition, from the viewpoint of forming a specific growth type-overlapping first protuberance 47, the upper limit of the ratio of the amount of reactive gas introduced to the total amount of sputtering gas and reactive gas introduced is, for example, 5 flow % or less, preferably 3 flow % or less.

[0091] The amorphous transparent conductive layer 40 formed in the first step may not have the first protrusions 42 before being subjected to the second step, or may already have the first protrusions 42.

[0092] In the second step, the amorphous transparent conductive layer 40 is crystallized to form a crystalline transparent conductive layer 4. Specifically, in the second step, the amorphous transparent conductive layer 40 is heated. The heating is performed, for example, in an air atmosphere.

[0093] In terms of forming the first protuberance 42, the heating temperature is, for example, 80 to 200°C, preferably 110 to 180°C, more preferably 150 to 175°C, and still more preferably 150 to 170°C.

[0094] In particular, from the viewpoint of forming the non-overlapping first protuberances 48, the lower limit of the heating temperature is, for example, 80° C. or more, preferably 110° C. or more, more preferably 130° C. or more, and even more preferably 150° C. or more.

[0095] In addition, from the viewpoint of forming the specific growth type-overlapping first protuberance 47, the upper limit of the heating temperature is, for example, 200° C. or less, preferably 180° C. or less, more preferably 175° C. or less, and even more preferably 170° C. or less.

[0096] In terms of forming the first protuberance 42, the heating time is, for example, 1 minute to 25 hours, preferably 3 minutes to 5 hours, and more preferably 5 minutes to 2 hours.

[0097] In particular, from the viewpoint of forming the non-overlapping first protuberances 48, the lower limit of the heating time is, for example, 1 minute or more, preferably 3 minutes or more, and more preferably 5 minutes or more.

[0098] Furthermore, from the viewpoint of forming the specific growth type-overlapping first protuberance 47, the upper limit of the heating time is, for example, 15 hours or less, preferably 5 hours or less, more preferably 3 hours or less, and even more preferably 2 hours or less.

[0099] In this way, a laminate 1 is manufactured which includes the base layer 2, the underlayer 3, and the transparent conductive layer 4 in this order towards one side in the thickness direction.

[0100] The total light transmittance of the laminate 1 is, for example, 50 to 100%, preferably 70 to 100%, more preferably 80 to 100%, and even more preferably 85 to 100%. The lower limit of the total light transmittance of the laminate 1 is, for example, 50% or more, preferably 70% or more, more preferably 80% or more, and even more preferably 85% or more. The upper limit of the total light transmittance of the laminate 1 is, for example, 100% or less.

[0101] 2. Use of Laminate 1 The laminate 1 is used, for example, in an article. Specifically, the laminate 1 is an optical laminate, and the above-mentioned article includes an optical article. Specifically, the article includes, for example, a touch sensor, an electromagnetic wave shield, a light control element, a photoelectric conversion element, a heat ray control member, a light-transmitting antenna member, a light-transmitting heater member, an image display device, and a lighting device.

[0102] 3. Effects of one embodiment 3, in the laminate 1, when the underlayer 3 has the second protuberance 32, the transparent conductive layer 4 is usually formed following the second protuberance 32 and has an overlapping first protuberance 47. On the other hand, depending on the forming conditions of the transparent conductive layer 4, there are cases where the non-overlapping first protuberance 48 is not formed. In such cases, the resistance value of the transparent conductive layer 4 may become relatively high.

[0103] Furthermore, as shown in FIG. 4, in the laminate 1, if the underlayer 3 does not have the second protrusion 32, the transparent conductive layer 4 does not have excellent adhesion to the underlayer 3.

[0104] In contrast, the laminate 1 has both the first protuberance 42 and the second protuberance 32, as shown in FIG. 1. That is, the transparent conductive layer 4 has the first protuberance 42, and the underlayer 3 has the second protuberance 32. The first protuberance 42 has a non-overlapping first protuberance 48 that does not overlap the second protuberance 32 when projected in the thickness direction. Therefore, the transparent conductive layer 4 has a relatively low resistivity. Furthermore, the first protuberance 42 has an overlapping first protuberance 47 that overlaps the second protuberance 32 when projected in the thickness direction. Therefore, the transparent conductive layer 4 has excellent adhesion to the underlayer 3.

[0105] That is, the laminate 1 includes the transparent conductive layer 4 that has both a relatively low resistivity and excellent adhesion to the underlayer 3 .

[0106] Furthermore, if the first protuberance 42 and the second protuberance 32 are formed, excellent scratch resistance can be obtained in each step when the laminate 1 is manufactured.

[0107] In the laminate 1, the overlapping first protuberance 47 preferably includes at least one specific growth type-overlapping first protuberance 47B. The specific growth type-overlapping first protuberance 47 has a height greater than the height of the second protuberance 32 that it overlaps when projected in the thickness direction.

[0108] If such specific growth type-overlapping first protuberances 47B are formed, particularly excellent scratch resistance can be obtained in each process when manufacturing the laminate 1.

[0109] Furthermore, in the laminate 1, if the material of the transparent conductive layer 4 is an indium tin composite oxide, the laminate 1 has excellent productivity, resistivity and transparency.

[0110] 4. Variations As shown by the imaginary line in FIG. 1, the laminate 1 may have another layer 5 as necessary. The other layer 5 may be, for example, a functional layer, more specifically, a light-adjusting functional layer. The light-adjusting functional layer may be, for example, a voltage-driven light-adjusting coating layer and a current-driven light-adjusting coating layer. The light-adjusting functional layer is used, for example, in polymer-dispersed liquid crystal (PDLC), polymer network liquid crystal (PNLC), suspended particle device (SPD), and electrochromic (EC). The functional layer may be, for example, a metal functional layer obtained by using a metal paste. Examples of metals include silver, copper, and titanium. The functional layer may be selected as necessary in the manufacture of the above-mentioned article (for example, a touch sensor, an electromagnetic wave shield, a light-adjusting element, a photoelectric conversion element, a heat ray control member, a light-transmitting antenna member, a light-transmitting heater member, an image display device, and lighting) in which the laminate 1 is used, and may be arbitrarily formed at an appropriate position and timing.

[0111] The other layer 5 is disposed, for example, on one surface in the thickness direction of the laminate 1 by a known method. Preferably, the other layer 5 is disposed on one surface 41 in the thickness direction of the transparent conductive layer 4 by a known method. Also, preferably, the other layer 5 is adjacent to one surface 41 in the thickness direction of the transparent conductive layer 4.

[0112] 2, the overlapping first protuberance 47 may include only the uniform-overlapping first protuberance 47A, and may not include the specific growth-overlapping first protuberance 47B. From the viewpoint of scratch resistance, the overlapping first protuberance 47 preferably includes the uniform-overlapping first protuberance 47A and the specific growth-overlapping first protuberance 47B, as shown in FIG.

[0113] Although not shown, the laminate 1 may not include the base layer 2. In such a case, the laminate 1 may include only the underlayer 3 and the transparent conductive layer 4. The laminate 1 may also include only the underlayer 3, the transparent conductive layer 4, and another layer 5.

[0114] In the above description, an embodiment in which the underlayer 3 and the crystalline transparent conductive layer 4 are adjacent to each other has been described in detail with reference to Fig. 1. However, the underlayer and the transparent conductive layer 4 do not have to be adjacent to each other. For example, although not shown, a transparent inorganic layer may be disposed between the underlayer 3 and the transparent conductive layer 4.

[0115] The transparent inorganic layer is, for example, an oxide, a nitride, or an oxynitride of a known inorganic element. Examples of the inorganic element include silicon, niobium, zirconium, zinc, titanium, aluminum, gallium, and tin. The transparent inorganic layer may have a stoichiometric composition or a non-stoichiometric composition. The type of the inorganic element in the transparent inorganic layer may be one type or multiple types. The transparent inorganic layer may be a single layer or multiple layers (laminated). The transparent inorganic layer may be a single film that is continuous in the surface direction, or may be a discontinuous film having a sea-island structure. The thickness of the transparent inorganic layer is, for example, 0.1 to 300 nm, preferably 0.1 to 150 nm. The lower limit of the thickness of the transparent inorganic layer is, for example, 0.1 nm or more. The upper limit of the thickness of the transparent inorganic layer is, for example, 300 nm or less, preferably 150 nm or less. EXAMPLES

[0116] The present invention will be described in more detail below with reference to examples and comparative examples. The present invention is not limited to the examples and comparative examples. The specific numerical values ​​of the blending ratio (content ratio), physical property values, parameters, etc. used in the following description can be replaced with the upper limit (a numerical value defined as "not more than" or "less than") or lower limit (a numerical value defined as "not less than" or "exceeding") of the corresponding blending ratio (content ratio), physical property values, parameters, etc. described in the above "Form for carrying out the invention".

[0117] Example 1 A substrate layer made of a long PET film (thickness 125 μm, manufactured by Mitsubishi Chemical Corporation) was prepared.

[0118] Also, a thermosetting resin composition containing a polyester resin and silica particles (particle size: 25 nm) was prepared.

[0119] Next, a thermosetting resin was applied to one surface in the thickness direction of the substrate layer to obtain a coating film.

[0120] The coating was then heated and dried to harden the coating, forming an undercoat layer. The undercoat layer had a thickness of about 10 nm. This resulted in a substrate having the substrate layer and the undercoat layer in that order in the thickness direction.

[0121] Next, an amorphous transparent conductive layer was formed on one surface in the thickness direction of the underlayer.

[0122] The transparent conductive layer was formed by reactive sputtering using a DC magnetron sputtering device. The sputtering method and conditions were as follows:

[0123] That is, a voltage was applied to the target of (1) below using a DC power supply. In this method, the horizontal magnetic field strength on the target was adjusted to the value of (2) below.

[0124] In this method, the film formation temperature was adjusted to the value of (3) below. The film formation temperature is the surface temperature of the film formation roll. The film formation temperature is the same as the temperature of the substrate (a laminate of the substrate layer and the undercoat layer).

[0125] In this method, the deposition chamber of the DC magnetron sputtering apparatus was evacuated to a vacuum, and the ultimate vacuum level in the deposition chamber was adjusted to the value of (4) below.

[0126] Next, in this method, Ar as a sputtering gas and oxygen as a reactive gas were introduced into the film formation chamber. The ratio of the amount of reactive gas (oxygen) introduced to the total amount of sputtering gas (Ar) and reactive gas (oxygen) introduced was adjusted to the value of (5) below. In addition, in this method, the air pressure in the film formation chamber during gas introduction was adjusted to the value of (6) below.

[0127] In this method, the amount of reactive gas (oxygen) introduced was adjusted so as to be within region R of the resistivity-oxygen introduction amount curve (see FIG. 5). The amount of reactive gas (oxygen) introduced was also adjusted so that the resistivity of the amorphous transparent conductive layer was set to the following value (7).

[0128] The resistivity-oxygen introduction amount curve shown in FIG. 5 was prepared by measuring in advance the relationship between the resistivity and the amount of oxygen introduced of an amorphous transparent conductive layer when the amorphous transparent conductive layer is formed by a reactive sputtering method.

[0129] Next, the amorphous transparent conductive layer was heated in a hot air oven to crystallize it. The heating temperature was the value of (8) below. The heating time was the value of (9) below. In this way, a laminate was produced having a base layer, a foundation layer, and a crystalline transparent conductive layer in that order on one surface in the thickness direction (see FIG. 1).

[0130] In the above method, the sputtering time was adjusted so that the thickness of the transparent conductive layer (measured by FE-TEM observation described later) would be the value of (10) below.

[0131] <Sputtering conditions> (1) Target: Sintered body of indium oxide and tin oxide (tin oxide concentration: 10% by mass) (2) Horizontal magnetic field strength on the target: 90mT (DC power supply) (3) Film-forming temperature (surface temperature of the film-forming roll): -8°C (4) The ultimate vacuum in the deposition chamber before gas introduction: 0.6×10 -4 Pa (5) The ratio of the amount of reactive gas (oxygen) introduced to the total amount of sputtering gas (Ar) and reactive gas (oxygen) introduced: about 2.6% by flow rate (6) Pressure in the deposition chamber when gas is introduced: 0.4 Pa (7) Resistivity of amorphous transparent conductive layer: 6.4×10 -4 Ω cm (8) Heating temperature: 160℃ (9) Heating time: 1 hour (10) Thickness of transparent conductive layer: 145 nm

[0132] The cross-sectional state of the laminate was confirmed by a transmission electron microscope (FE-TEM) according to the "cross-sectional observation" described later. The laminate had a first protuberance and a second protuberance, as shown in FIG.

[0133] That is, in the laminate, the underlayer had a plurality of second protrusions, each of which had a height of about 15 nm.

[0134] The transparent conductive layer also had a plurality of first protrusions.

[0135] More specifically, the first protrusions had a plurality of non-overlapping first protrusions that did not overlap with the second protrusions in the thickness direction. The height of the non-overlapping first protrusions was about 12 nm.

[0136] The first ridge also had a plurality of overlapping first ridges that overlapped with the second ridges in the thickness direction. In particular, the overlapping first ridges had a plurality of uniform-overlapping first ridges (overlapping first ridges that did not have a height greater than the height of the overlapping second ridges when projected in the thickness direction). The height of the uniform-overlapping first ridges was about 15 nm.

[0137] Furthermore, the overlapping primary ridges had multiple specific growth type-overlapping primary ridges (overlapping primary ridges having a height greater than the height of the overlapping secondary ridges when projected in the thickness direction). The height of the specific growth type-overlapping primary ridges was about 21 nm.

[0138] Example 2 The sputtering time was changed so that the thickness of the transparent conductive layer became 75 nm. Other than this, a laminate was produced in the same manner as in Example 1.

[0139] The cross-sectional state of the laminate was confirmed by a transmission electron microscope (FE-TEM) according to the "cross-sectional observation" described later. As shown in FIG. 2, the laminate had a first protuberance and a second protuberance.

[0140] That is, in the laminate, the underlayer had a plurality of second protrusions, each of which had a height of about 15 nm.

[0141] The transparent conductive layer also had a plurality of first protrusions.

[0142] More specifically, the first protrusions had a plurality of non-overlapping first protrusions that did not overlap with the second protrusions in the thickness direction. The height of the non-overlapping first protrusions was about 8 nm.

[0143] The first ridge also had a plurality of overlapping first ridges that overlapped with the second ridges in the thickness direction. In particular, the overlapping first ridges had a plurality of uniform-overlapping first ridges (overlapping first ridges that did not have a height greater than the height of the overlapping second ridges when projected in the thickness direction). The height of the uniform-overlapping first ridges was about 15 nm.

[0144] However, the overlapping primary ridge did not have a specific growth type-overlapping primary ridge (an overlapping primary ridge having a height greater than the height of the overlapping secondary ridge when projected in the thickness direction).

[0145] Comparative Example 1 The sputtering time was changed so that the thickness of the transparent conductive layer became 32 nm. In addition, the film formation temperature was changed to 80° C. Other than this, the laminate was produced in the same manner as in Example 1.

[0146] The cross-sectional state of the laminate was confirmed by a transmission electron microscope (FE-TEM) according to the "cross-sectional observation" described later. As shown in FIG. 3, the laminate had a first protuberance and a second protuberance.

[0147] That is, in the laminate, the underlayer had a plurality of second protrusions, each of which had a height of about 15 nm.

[0148] The transparent conductive layer also had a plurality of first protrusions.

[0149] However, the first ridge did not have a non-overlapping first ridge that did not overlap a second ridge in the thickness direction.

[0150] On the other hand, the first ridge had a plurality of overlapping first ridges that overlapped with the second ridges in the thickness direction. The overlapping first ridges also had a plurality of uniform-overlapping first ridges (overlapping first ridges that did not have a height greater than the height of the overlapping second ridges when projected in the thickness direction). The height of the uniform-overlapping first ridges was about 15 nm.

[0151] However, the overlapping primary ridge did not have a specific growth type-overlapping primary ridge (an overlapping primary ridge having a height greater than the height of the overlapping secondary ridge when projected in the thickness direction).

[0152] Comparative Example 2 A laminate was produced in the same manner as in Example 1 except that a thermosetting resin composition containing a polyester resin but not containing silica particles was used in forming the undercoat layer.

[0153] The cross-sectional state of the laminate was confirmed by a transmission electron microscope (FE-TEM) according to the "cross-sectional observation" described later. As shown in FIG. 3, the laminate had a first protuberance but did not have a second protuberance.

[0154] That is, in the laminate, the transparent conductive layer had a plurality of first protrusions.

[0155] More specifically, the first protrusions had a plurality of non-overlapping first protrusions that did not overlap with the second protrusions in the thickness direction. The height of the non-overlapping first protrusions was about 12 nm.

[0156] Furthermore, the first ridge did not have an overlapping first ridge that overlaps the second ridge in the thickness direction.

[0157] <Evaluation> The transparent conductive layers of the Examples and Comparative Examples were evaluated for the following items. The results are shown in Table 1.

[0158] [Thickness of transparent conductive layer] The thickness of the transparent conductive layer was measured by FE-TEM observation.

[0159] More specifically, a sample for cross-sectional observation of the transparent conductive layer was first prepared by FIB microsampling. In the FIB microsampling, an FIB device (product name "FB2200", manufactured by Hitachi) was used. The accelerating voltage was set to 10 kV.

[0160] Next, the thickness of the transparent conductive layer in the sample for cross-sectional observation was measured by FE-TEM observation (cross-sectional observation). In the FE-TEM observation, a FE-TEM device (product name "JEM-2800", manufactured by JEOL) was used. The acceleration voltage was set to 200 kV.

[0161] [Cross-section observation] The cross-sections of the transparent conductive laminates of each Example and Comparative Example were adjusted using an FIB microsampling method, and then the cross-sections of each base layer and transparent conductive layer were subjected to FE-TEM observation to confirm the presence of the first protuberance and the second protuberance.

[0162] The number of primary protuberances present within a length of 1 μm on one side of the transparent conductive layer in the thickness direction was counted. The observation magnification was set so as to enable observation of the presence or absence and height of the primary protuberances and the secondary protuberances.

[0163] The apparatus and measurement conditions are as follows. FIB equipment: Hitachi FB2200, Acceleration voltage: 10kV FE-TEM equipment: JEOL JEM-2800, accelerating voltage: 200kV

[0164] [Resistance characteristics] The resistance value was measured by the four-terminal method in accordance with JIS K7194 (1994).

[0165] The resistance characteristics were evaluated according to the following criteria. ◎: Less than 15.0Ω / □ ○: 15.0Ω / □ or more, less than 25.0Ω / □ △: 25.0Ω / □ or more, less than 35.0Ω / □ ×;35.0Ω / □ or more

[0166] [Scratch resistance] The scratch resistance was evaluated by the following method. That is, a sample film (MD direction 10 cm × TD direction 5 cm) was cut out from the laminate. Next, the transparent substrate side of the sample film was bonded to a glass plate via a double-sided strong adhesive tape. Next, the glass plate with the sample film was set on the stage of a sliding tester (product name "10-pen tester", manufactured by MTM Corporation). Next, a sliding test was performed on the transparent conductive layer of the sample film on the glass plate using the sliding tester. Specifically, after ethanol was dropped on the transparent conductive layer of the sample film, a wipe as a sliding material was pressed against the dropped area with a load of 2 kg, and the wipe was reciprocated 100 times in the MD direction (alcohol sliding test). After that, the specimen was visually observed to confirm the presence or absence of scratches on the transparent conductive layer.

[0167] The scratch resistance was evaluated according to the following criteria. No visible scratches were observed. ○: Scratches were visible and the number of scratches was 3 or less. △: Scratches were visible, and the number of scratches was more than 3 and less than 6. ×: scratches were visible and the number of scratches exceeded six.

[0168] [Adhesion] The adhesion (adhesion in a humid environment) was evaluated by the following method. That is, five laminates (five specimens) of 5 cm x 5 cm size were placed in a humid heat oven at 85°C and 85% humidity, and exposed to the same environment for 500 hours. After that, the adhesion was evaluated according to JIS K5600-5-6 (1999).

[0169] The adhesion was evaluated according to the following criteria. ○: All 5 samples fell into category 0, or 3 or more samples fell into category 0 and 2 or less fell into category 1. ×: The results did not meet the criteria for ◯.

[0170] [Table 1] [Explanation of symbols]

[0171] 3 Base layer 4 Transparent conductive layer 31 One side 32 Second uplift 42 1st prominence 47 Non-overlapping first prominence 48 Duplicate first prominence

Claims

1. A laminate including an underlayer and a crystalline transparent conductive layer disposed on one side of the underlayer in a thickness direction, The underlayer contains a resin, one surface in a thickness direction of the transparent conductive layer includes a plurality of first protrusions each having a height of 3 nm or more; the one surface of the underlayer includes at least one second protrusion having a height of 3 nm or more; The first protuberance is At least one non-overlapping first protuberance that does not overlap the second protuberance when projected in the thickness direction; and A laminate comprising at least one overlapping first ridge that overlaps the second ridge when projected in the thickness direction.

2. The overlapping first ridge comprises at least one specific growth type-overlapping first ridge; The laminate according to claim 1 , wherein the specific growth type-overlapping first ridge has a height greater than a height of the second ridge that it overlaps when projected in the thickness direction.

3. The laminate according to claim 1 or 2, wherein the material of the transparent conductive layer is an indium tin composite oxide.

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