Isolator apparatus and method for substrate processing chamber

Abstract

To provide an isolator device and a component thereof that reduce diffusion of process gas below the top surface of a pedestal that results in deposition of materials on the outer surface of the pedestal and / or other components or surfaces of a substrate processing chamber other than a substrate.SOLUTION: A substrate processing chamber includes an isolator ring 159 disposed between a pedestal 138 and a pumping liner 160. The isolator ring includes a first surface 1013 that faces the pedestal, the first surface is disposed in a gap from the outer periphery of the pedestal. The isolator ring also includes a second surface 1028 that faces the pumping liner and a protrusion 1015 that protrudes from the first surface of the isolator ring toward the outer periphery of the pedestal. The protrusion defines a neck portion 1017 of the gap between the pedestal and the isolator ring.SELECTED DRAWING: Figure 1B

Description

[Technical field]

[0001] Aspects of the present disclosure generally relate to isolator devices, components thereof, and methods relating thereto for substrate processing chambers. [Background technology]

[0002]

[0002] During substrate processing operations, such as chemical vapor deposition (CVD) operations, processing gases may diffuse below an upper surface of the pedestal. The diffused processing gases result in deposition of material on the exterior surface of the pedestal and / or other components or surfaces of the substrate processing chamber that are not the substrate. The deposition can slow substrate processing operations, cause production downtime of the substrate processing chamber, cause increased cleaning times, reduce throughput, cause non-uniform deposition on the substrate, and / or cause defects in the substrate.

[0003] Therefore, there is a need for a device that reduces the diffusion of process gases below the upper surface of the pedestal. Summary of the Invention

[0004] Aspects of the present disclosure generally relate to isolator devices, components thereof, and methods relating thereto for substrate processing chambers.

[0005] In one implementation, the substrate processing chamber includes a chamber body, a showerhead having one or more gas openings formed in a lower surface thereof, and a pedestal disposed within the chamber body. The pedestal has a support surface and an outer circumferential surface. The support surface faces the showerhead. The substrate processing chamber also includes a pumping liner disposed about and surrounding the pedestal. The pumping liner has a first outer surface facing the outer circumferential surface of the pedestal and a second outer surface facing the chamber body. The substrate processing chamber also includes an isolator ring disposed between the pedestal and the pumping liner. The isolator ring includes a first surface facing the pedestal, the first surface being disposed in a gap from the outer circumferential surface of the pedestal. The isolator ring also includes a second surface facing the pumping liner and a protrusion protruding from the first surface of the isolator ring toward the outer circumferential surface of the pedestal. The protrusion defines a neck portion of the gap between the pedestal and the isolator ring.

[0006] In one implementation, the substrate processing chamber includes a chamber body and a showerhead having one or more gas openings formed in a lower surface thereof. The substrate processing chamber also includes a pedestal disposed within the chamber body, the pedestal having a support surface and an outer circumferential surface. The support surface faces the showerhead. The substrate processing chamber also includes a pumping liner disposed about and surrounding the pedestal. The pumping liner has a first outer surface facing the outer circumferential surface of the pedestal and a second outer surface facing the chamber body. The substrate processing chamber also includes an isolator ring disposed between the pedestal and the pumping liner. The isolator ring includes a first surface facing the pedestal, a second surface facing the pumping liner, and a tapered upper surface. The tapered upper surface defines an upper edge of the isolator ring, the upper edge of the isolator ring being disposed above the support surface of the pedestal.

[0007] In one implementation, a non-transitory computer readable medium includes instructions that, when executed, cause a substrate processing chamber to flow one or more process gases at a first flow rate. The one or more process gases are flowed from a showerhead above a pedestal into a processing region of the substrate processing chamber. The instructions, when executed, cause the substrate processing chamber to flow one or more purge gases from a purge gas inlet at a second flow rate. The second flow rate has a ratio of the second flow rate to the first flow rate, the ratio being within a range of 0.25 to 0.75 of the first flow rate.

[0008]

[0008] In order that the above-mentioned features of the present disclosure may be understood in detail, a more particular description of the present disclosure briefly summarized above may be obtained by reference to implementations, some of which are illustrated in the accompanying drawings. However, it should be noted that the present disclosure may admit of other equally effective implementations, and therefore the accompanying drawings show only common implementations of the present disclosure, and therefore should not be considered as limiting the scope of the present disclosure. [Brief description of the drawings]

[0009] [Figure 1A] 1 is a schematic cross-sectional view of a substrate processing chamber according to one implementation. [Figure 1B]

[0010] 1B is a schematic enlarged cross-sectional view of the substrate processing chamber shown in FIG. 1A according to one implementation. [Diagram 2]

[0011] 1 is a schematic diagram of a method of operating a substrate processing chamber according to one implementation. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010]

[0012] To facilitate understanding, wherever possible, identical reference numbers have been used to designate identical elements common to the figures. It is contemplated that elements disclosed in one implementation may be beneficially utilized in other implementations without specific recitation.

[0011]

[0013] Aspects of the present disclosure generally relate to isolator devices, components thereof, and related methods for substrate processing chambers.

[0012]

[0014] FIG. 1A is a schematic cross-sectional view of a substrate processing chamber according to one implementation. The substrate processing chamber 100 can be, for example, a chemical vapor deposition (CVD) chamber or a plasma CVD chamber. It is contemplated in the present disclosure that other chambers, such as an atomic layer deposition (ALD) chamber or a physical vapor deposition (PVD) chamber, can be used. The substrate processing chamber 100 has a chamber body 102 and a chamber lid 104 disposed on the chamber body 102. The chamber body 102 includes an interior space 106 therein. The interior space 106 is a space defined by the chamber body 102 and the chamber lid 104. It is contemplated in the present disclosure that the chamber body 102 can be made of a single body, or two or more bodies. The chamber body 102 includes one or more sidewalls and a bottom.

[0013]

[0015] The substrate processing chamber 100 includes a gas distribution assembly 116 coupled to or disposed within the chamber lid 104 for delivering a flow of one or more process gases 109 through the showerhead 101 into the processing region 110. The one or more process gases may include one or more of Ar and / or C3H6, among others. In one example, the one or more process gases include one or more reactive gases. The showerhead 101 includes a backing plate 126 and a face plate 130. The gas distribution assembly 116 includes a gas manifold 118 coupled to a gas injection passage 120 formed in the chamber lid 104. The gas manifold 118 receives a flow of one or more process gases from one or more gas sources 122 (two gas sources are shown). The flow of process gas received from the one or more gas sources 122 distributes within the gas box 124, flows through a plurality of openings 191 in the backing plate 126, and further distributes within a plenum 128 defined by the backing plate 126 and the faceplate 130. The flow of process gas 109 then flows through one or more gas openings 132 formed in the lower surface 119 of the faceplate 130 of the showerhead 101 to the processing region 110 of the interior space 106.

[0014]

[0016] The interior space 106 includes a pedestal 138 disposed within the chamber body 102. The pedestal 138 supports a substrate 136 within the substrate processing chamber 100. The pedestal 138 supports the substrate 136 on a support surface 139 of the pedestal 138. The pedestal 138 includes a heater and an electrode disposed therein. The electrode can receive a direct current (DC) voltage, radio frequency (RF) energy, or alternating current (AC) energy to facilitate processing. A lower surface 119 of a faceplate 130 of the showerhead 101 faces the support surface 139 of the pedestal 138. The support surface 139 faces the lower surface 119 of the faceplate 130 of the showerhead 101. It is contemplated in the present disclosure that the pedestal 138 can be made of a single body, or two or more bodies.

[0015]

[0017] The pedestal 138 is movably positioned within the interior volume 106 by a lift system 195. Movement of the pedestal 138 facilitates transfer of the substrate 136 in and out of the interior volume 106 through a slit valve formed through the chamber body 102. The pedestal 138 can also be moved to various processing positions for processing of the substrate 136.

[0016]

[0018] During substrate processing, the heater heats the pedestal 138 and the support surface 139 as process gases (such as process gas 109) flow into the processing region 110. Additionally, electrodes on the pedestal 138 deliver radio frequency (RF) energy, alternating current (AC), or direct current (DC) to facilitate plasma generation in the processing region 110 and / or to facilitate chucking of the substrate 136 to the pedestal 138 during substrate processing. The heat, gases, and energy from the electrodes in the pedestal 138 facilitate deposition of a film on the substrate 136 during substrate processing. The faceplate 130 (which is grounded via a connection to the chamber body 102) and the electrodes on the pedestal 138 facilitate the creation of a capacitive plasma coupling. When power is supplied to an electrode in the pedestal 138, an electric field is created between the faceplate 130 and the pedestal 138, causing atoms of the gas present in the processing region 110 between the pedestal 138 and the faceplate 130 to ionize and release electrons. The ionized atoms are accelerated to the pedestal 138 to facilitate film formation on the substrate 136.

[0017]

[0019] The pumping device 103 is disposed within the substrate processing chamber 100. The pumping device 103 facilitates the removal of gases from the interior space 106 and the processing region 110. The gases pumped by the pumping device 103 include one or more of process gases and process residues. The process residues may result from the process of depositing a film on the substrate 136.

[0018]

[0020] The pumping device 103 includes a pumping liner 160 disposed on a stepped surface 193 of the chamber body 102, and an isolator ring 159 disposed between the pedestal 138 and the pumping liner 160. The stepped surface 193 is stepped upward from a bottom surface 154 of the chamber body 102. The stepped surface 193 supports the pumping liner 160. It is contemplated in the present disclosure that the pumping liner 160 may be made of a single body, or two or more bodies. The pumping liner 160 is made of a material including one or more of aluminum, aluminum oxide, and / or aluminum nitride. The isolator ring 159 is made of an electrically insulating material, such as a ceramic material. In one example, the isolator ring 159 is made of one or more of quartz, ceramic materials including aluminum, such as aluminum oxide and / or aluminum nitride, or any other suitable material. The pumping liner 160 is disposed around and surrounds the pedestal 138. A portion of the purge gas passage 111 is between the isolator ring 159 and the pump liner 160 on one side of the purge gas passage 111 and between the isolator ring 159 and the pedestal 138 on the other side of the purge gas passage 111. The substrate processing chamber 100 includes a purge gas inlet 113 disposed at a bottom of the chamber body 102. The purge gas inlet 113 is an opening formed in a bottom surface of the chamber body 102. The purge gas inlet 113 is fluidly coupled to a purge gas source 114 that provides one or more purge gases 179 to the purge gas inlet 113. The bowl 112 is disposed within the interior space 106. The bowl 112 defines a purge gas space 115. One or more bellows 117 may be disposed within the purge gas space 115. One or more purge gas baffles 161 may be disposed within the purge gas space 115. The bellows or bellows 121 are disposed above the horizontal portion 112b of the bowl 112 and below the bottom surface 198 of the pedestal 138. The bellows or bellows 121 separate a dead volume 163 from a portion of the purge gas flow passage 111 between the bellows or bellows 121 and the vertical portion 112a of the bowl 112.

[0019]

[0021] During a substrate processing operation, and while process gas 109 flows from showerhead 101 into processing region 110, purge gas inlet 113 flows one or more purge gases 179 into purge gas space 115. Horizontal portion 112b of bowl 112 includes one or more purge gas openings 197 that flow purge gas 179 from purge gas space 115 into purge gas passages 111. One or more purge gas openings 197 are disposed radially outward of one or more bellows 121. While process gas 109 flows toward substrate 136 to deposit a film on substrate 136, purge gas 179 flows upward in purge gas passages 111 to prevent process gas 109 from diffusing downward into purge gas passages 111. The process gas 109 and the purge gas 179 contact and / or mix at or near the support surface 139. The process gas 109 and the purge gas 179 mix to form a mixed gas 148 (shown in FIG. 1B ) that is pumped by the pumping device 103. The pumping device 103 includes a pumping liner 160 and an isolator ring 159.

[0020]

[0022] The one or more purge gases 179 include one or more inert gases, such as one or more of Ar and / or N2. The one or more process gases 109 flow from the showerhead 101 into the process region 110 at a first flow rate. In one example, the first flow rate is a volumetric flow rate having units of standard cubic centimeters per minute (SCCM). The one or more purge gases 179 flow from the purge gas inlet 113 into the purge gas space 115 at a second flow rate. In one example, the second flow rate is a volumetric flow rate having units of SCCM. The second flow rate is a ratio R1 to the first flow rate. The ratio R1 is in a range of 0.25 to 0.75 of the first flow rate. In one example, the ratio R1 is in a range of 0.25 to 0.50 of the first flow rate, for example, 0.25, 0.30, or 0.40. In one example, the ratio R1 is in a range of 0.48 to 0.52. In one embodiment, which can be combined with other embodiments, the ratio R1 is about 0.5 of the first flow rate. Ranges and examples of the ratio R1 of the second flow rate to the first flow rate provide benefits such as preventing diffusion of at least a portion of the process gas into the purge gas passage 111 below the support surface 139 during substrate processing operations. Reducing or preventing such diffusion reduces or eliminates the possibility that the process gas 109 will deposit material on surfaces other than the substrate 136. Reducing deposition on surfaces other than the substrate 136 reduces or eliminates delays, reduced throughput, operating costs, cleaning times, and / or substrate defects.

[0021]

[0023] The substrate processing chamber 100 is part of a substrate processing system 180 that includes a controller 181 coupled to the substrate processing chamber 100. The controller 181 is part of a non-transitory computer readable medium.

[0022]

[0024] The controller 181 controls aspects of the substrate processing chamber 100 during substrate processing. The controller 181 includes a central processing unit (CPU) 182, a memory 183, and support circuits 184 for the CPU 182. The controller 181 facilitates control of the components of the substrate processing chamber 100. The controller 181 may be one of any form of general purpose computer that may be used in an industrial environment to control various chamber components and sub-processors. The memory 183 stores instructions, such as software (source code or object code), that may be executed or invoked to control the overall operation of the substrate processing chamber 100 in the manner described herein. The controller 181 manipulates the operation of each of the controllable components within the substrate processing chamber 100. For example, the controller 181 controls the operation of the gas source 122 to introduce process gas, the purge gas source 114 to introduce purge gas, and the vacuum pump 133 (described below) to evacuate gases to eliminate or reduce contaminant particles (e.g., residue) within the substrate processing chamber. As an example, the controller 181 controls the lift system 195 to raise and lower the pedestal 138 and controls the heaters and electrodes of the pedestal 138 to provide heat and energy to facilitate processing. FIG. 1B is an enlarged schematic cross-sectional view of the substrate processing chamber 100 shown in FIG. 1A according to one implementation. The pedestal 138 includes an outer circumferential surface 1010. The pumping liner 160 has a first outer surface 1011 facing the outer circumferential surface 1010 of the pedestal 138 and a second outer surface 1012 facing the chamber body 102. The isolator ring 159 has a first surface 1013 facing the outer circumferential surface 1010 of the pedestal 138 and a second surface 1028 facing the pumping liner 160. The isolator ring 159 is disposed within a shoulder 1014 of the pumping liner 160. The isolator ring 159 includes a protrusion 1015 that protrudes from the first surface 1013 toward the outer circumferential surface 1010 of the pedestal 138. The protrusion 1015 defines a step surface 1016 and a flow edge 1018 of the isolator ring 159. The step surface 1016 and the flow edge 1018 are disposed within the purge gas flow passage 111.The protrusion 1015 includes a rounded edge 1031 disposed adjacent to a flow edge 1018 at a bottom end of the protrusion 1015. The rounded edge 1031 is disposed between the flow edge 1018 and a step surface 1016 on the periphery of the protrusion 1015. The rounded edge 1031 transitions between the flow edge 1018 and the step surface 1016.

[0023]

[0025] In one embodiment, which can be combined with other embodiments, the protrusion 1015 is part of the isolator ring 159, so that the protrusion 1015 and the isolator ring 159 form a single, integral body. In one embodiment, which can be combined with other embodiments, the protrusion 1015 is a body that is separate from the body or bodies that make up the isolator ring 159. The protrusion 1015 is made from the same material or materials as the isolator ring 159. In FIGS. 1A and 1B, the protrusion 1015 is shown as having a different cross-section compared to the cross-section of the isolator ring 159 for ease of reference. It is envisioned in the present disclosure that the protrusion 1015 and the isolator ring 159 can have the same cross-section, such as when the protrusion 1015 and the isolator ring 159 are part of the same, single, integral body.

[0024]

[0026] In one embodiment, which can be combined with other embodiments, the protrusion 1015 includes a ring coupled to the first surface 1013 of the isolator ring 159. The protrusion 1015 may be coupled to the isolator ring 159 using any suitable method of joining metallic and / or ceramic materials, such as using one or more of bonding, welding, brazing, shrink fitting, interference fitting, fasteners (such as screws, rivets, bolts, nuts, and / or studs), and / or threaded engagement.

[0025]

[0027] The isolator ring 159 is positioned such that the first surface 1013 is disposed in a gap from the outer periphery 1010 of the pedestal 138. The gap between the first surface 1013 and the outer periphery 1010 has a first width W1. The protrusion 1015 defines a neck portion 1017 of the gap. The neck portion 1017 includes a second width W2 between the step surface 1016 and the outer periphery 1010. The second width W2 is less than the first width W1. The second width W2 is in a ratio R2 to the first width W1. The ratio R2 is in a range of 0.25 to 0.75 of the first width W1. In one example, the ratio R2 is 0.50. In one example, the ratio R2 is 0.75. In one embodiment, which can be combined with other embodiments, the ratio R2 is about 0.25 of the first width W1. In one embodiment, which can be combined with other embodiments, the ratio R2 is in the range of 0.23 to 0.27.

[0026]

[0028] The neck portion 1017 and the gap between the first surface 1013 and the outer circumferential surface 1010 are at least a portion of the purge gas flow passage 111. The purge gas 179 flows upward through the gap between the outer circumferential surface 1010 and the first surface 1013 and through the neck portion 1017 to contact the process gas 109 and form the mixed gas 148. At least a portion of the purge gas 179 may flow over the flow edge 1018 and / or around the rounded edge 1031 of the isolator ring 159.

[0027]

[0029] The protrusions 1015 increase the flow rate of the purge gas 179, the process gas 109, and / or the gas mixture 148. The protrusions 1015, and the ratio R2 of the second width W2 to the first width W1 described above, facilitate reducing the diffusion of the process gas 109 under the support surface 139 and into the purge gas flow passages 111. The reduced diffusion of the process gas 109 facilitates reducing the deposition of material on surfaces other than the substrate 136, such as the perimeter surface 1010, the first surface 1013, the step surface 1016, and the surfaces of the bowl 112. By reducing deposition on surfaces other than the substrate 136, delays, reduced throughput, operating costs, cleaning times, and / or substrate defects are reduced or eliminated.

[0028]

[0030] The isolator ring 159 includes a tapered upper surface 1019 that tapers upward in a direction D1 from the pumping liner 160 toward the pedestal 138. The tapered upper surface 1019 intersects with and defines an upper edge 1020. The upper edge 1020 is rounded. The upper edge 1020 defines an upper end of the isolator ring 159 opposite a lower end of the isolator ring 159 that is defined by a bottom surface 1021 of the isolator ring 159. The isolator ring 159 includes a shoulder 1022 that interfaces with a peripheral corner 1023 of the pumping liner 160. The peripheral corner 1023 is a portion of an outer surface 1024 of the pumping liner 160 on one side of one or more openings 125 (described below). The pumping liner 160 includes a shoulder 1025 disposed on an opposite side of the one or more openings 125 relative to the outer surface 1024. The upper end of the isolator ring 159 defined by the upper edge 1020 is disposed above the support surface 139 of the pedestal 138, including when the pedestal 138 is in the raised position, which is the processing position. The upper end of the isolator ring 159 is disposed above the support surface 139 by a first distance L1 from the support surface 139. The first distance L1 is within a range of 0.0 mm to 3.0 mm, for example, 1.0 mm to 2.0 mm, or 1.9 mm to 2.1 mm. In one embodiment, which can be combined with other embodiments, the first distance L1 is about 2.0 mm.

[0029]

[0031] The upper end of the isolator ring 159 is disposed below the lower surface 119 of the faceplate 130 of the showerhead 101 by a second distance L2 from the lower surface 119. The second distance L2 is within a range of 4.0 mm to 7.0 mm. The first distance L1 and the second distance L2 may exist when the substrate processing chamber 100 is processing the substrate 136, such as when the pedestal 138 is positioned in a raised position, which is a processing position for processing the substrate 136. The first distance L1 and the second distance L2 are added together to equal a total gap between the lower surface 119 of the faceplate 130 and the support surface 139 of the pedestal 138. In one example, the first distance L1 is within a range of 0 percent to 50 percent of the total gap, such as 10 percent to 45 percent of the total gap. In one example, the second distance L2 is within a range of 50 percent to 100 percent of the total gap, such as 55 percent to 90 percent of the total gap. In one example, the total gap is in the range of 5.0 mm to 10.0 mm, for example 7.0 mm.

[0030]

[0032] The first distance L1 and / or the second distance L2 increase the flow rate of the purge gas 179, the process gas 109, and / or the gas mixture 148. For example, the flow rate of the purge gas 179, the process gas 109, and / or the gas mixture 148 increases as the purge gas 179, the process gas 109, and / or the gas mixture 148 flows between the isolator ring 159 and the showerhead 101. The above-mentioned first distance L1 and second distance L2 facilitate reducing the diffusion of the process gas 109 under the support surface 139 and into the purge gas passages 111. The reduced diffusion of the process gas 109 facilitates reducing the deposition of material on surfaces other than the substrate 136. As an example, the reduced diffusion of the process gas 109 facilitates reducing the deposition of material on the perimeter surface 1010, the first surface 1013, the step surface 1016, and the bowl surface 112. By reducing deposition on surfaces other than the substrate 136, delays, reduced throughput, operating costs, cleaning times, and / or substrate defects are reduced or eliminated.

[0031]

[0033] The mixed gas 148 is pumped using a pumping device 103 that includes a pumping liner 160 and an isolator ring 159. The mixed gas 148 flows through one or more openings 123 between the isolator ring 159 and the pumping liner 160 and through one or more openings 125 formed in the wall of the pumping liner 160. The mixed gas 148 flows into the annulus 105 of the pumping liner 160 and through exhaust ports 145 formed in the pumping liner 160. The pumping liner 160 includes an upper exterior surface 1026 that interfaces with the lower surface 119 of the faceplate 130 of the showerhead 101.

[0032]

[0034] 1A, the pumping liner 160 is fluidly connected to the foreline 172 through a first conduit 176 and a second conduit 178. The foreline 172 includes a first vertical conduit 131, a second vertical conduit 134, a horizontal conduit 135, and an outlet conduit 143. The outlet conduit 143 is, in one example, a third vertical conduit. In one example, the first conduit 176 and the second conduit 178 are openings formed in the chamber body 102. In the present disclosure, it is contemplated that the first conduit 176 and the second conduit 178 may be tubes that are other flow devices extending between the chamber body 102, for example, the bottom surface 154, and the pumping liner 160. As an example, the first conduit 176 and the second conduit 178 may be part of the first vertical conduit 131 and the second vertical conduit 134, respectively. In such an example, the first vertical conduit 131 and the second vertical conduit 134 may extend through the chamber body 102 and be coupled to the pumping liner 160. In one example, which can be combined with other embodiments, the first conduit 176 and the second conduit 178 are each openings formed in one or more sidewalls of the chamber body 102.

[0033]

[0035] The first conduit 176 is fluidly connected to the pumping liner 160 and the first vertical conduit 131 of the foreline 172. The second conduit 178 is fluidly connected to the pumping liner 160 and the second vertical conduit 134 of the foreline 172. The first vertical conduit 131 and the second vertical conduit 134 are fluidly connected to a horizontal conduit 135. The horizontal conduit 135 includes a first portion 137 connected to the first vertical conduit 131, a second portion 140 connected to the second vertical conduit 134, and a third portion 141 connected to the outlet conduit 143. The horizontal conduit 135 includes a first end 149 adjacent to the first vertical conduit 131 and a second end adjacent to the second vertical conduit 134. The horizontal conduit 135 may be made of a unitary body or may be manufactured from one or more components.

[0034]

[0036] The first conduit 176, the second conduit 178, the first vertical conduit 131, the second vertical conduit 134, and the horizontal conduit 135 are configured to pass gas through them. It is contemplated by the present disclosure that the first conduit 176, the second conduit 178, the first vertical conduit 131, and the second vertical conduit 134 need not be perfectly vertical, but may be angled or include one or more bends and / or angles. It is also contemplated by the present disclosure that the horizontal conduit 135 need not be perfectly horizontal, but may be angled or include one or more bends and / or angles.

[0035]

[0037] The outlet conduit 143 is fluidly coupled to the vacuum pump 133 to control the pressure within the processing region 110 and to evacuate gases and residues from the processing region 110. The vacuum pump 133 evacuates gases from the processing region 110 through the pumping liner 160 of the foreline 172, the first conduit 176, the second conduit 178, the first vertical conduit 131, the second vertical conduit 134, the horizontal conduit 135, and the outlet conduit 143.

[0036]

[0038] The exhaust port 145 (shown in FIG. 1B ) is fluidly connected to the outlet conduit 143 through a second conduit 178, a second vertical conduit 134, and a horizontal conduit 135. The mixed gas 148 flows from the annulus 105 through the exhaust port 145 and into the second conduit 178. A second exhaust port in the pumping liner 160 is disposed between the annulus 105 and the first conduit 17. The second exhaust port is fluidly connected to the outlet conduit 143 through a first conduit 176, a first vertical conduit 131, and a horizontal conduit 135. In addition to flowing through the exhaust port 145, the mixed gas 148 may flow through the second exhaust port and into the first conduit 176.

[0037]

[0039] The first vertical conduit 131 is configured to pass the mixed gas 148 from the first conduit 176 into the first portion 137 of the horizontal conduit 135. The second vertical conduit 134 is configured to pass the mixed gas 148 from the second conduit 178 into the second portion 140 of the horizontal conduit 135. The first portion 137 and the second portion of the horizontal conduit 135 are configured to pass the mixed gas 148 from the first vertical conduit 131 and the second vertical conduit 134, respectively, into the third portion 141 of the horizontal conduit 135. The third portion 141 of the horizontal conduit 135 is configured to pass the mixed gas 148 from the horizontal conduit 135 into the outlet conduit 143. The outlet conduit 143 is configured to exhaust the mixed gas 148 from the exhaust port 145 and a second exhaust port disposed between the annulus 105 and the first conduit 176.

[0038]

[0040] 1A, 1B show a pumping liner 160 having two conduits 176, 178, two vertical conduits 131, 134, an exhaust port 145 and a second exhaust port, it is contemplated in the present disclosure that more conduits, vertical conduits, and / or exhaust ports may be implemented. For example, the pumping liner 160 may have at least three exhaust ports fluidly coupled to the respective conduits and vertical conduits. The third conduit may be coupled to a third vertical conduit, which may be coupled to the horizontal conduit 135. The three exhaust ports may be positioned approximately equidistant from one another, e.g., 120 degrees from one another, along the circumferential axis of the pumping liner 160.

[0039]

[0041] 2 is a schematic diagram of a method 200 of operating a substrate processing chamber according to one implementation. The method 200 of operating a substrate processing chamber is to process one or more substrates, such as to deposit a film on one or more substrates. The method 200 includes, in operation 201, raising a pedestal to a processing position. The pedestal includes a substrate to be processed disposed on a support surface of the pedestal.

[0040]

[0042] Operation 203 includes flowing one or more process gases from a showerhead above the pedestal into a processing region of the substrate processing chamber at a first flow rate. Operation 205 includes flowing one or more purge gases from a purge gas inlet into a purge gas space of the substrate processing chamber at a second flow rate. In one embodiment, which can be combined with other embodiments, the process gas and the purge gas are flowed simultaneously into the substrate processing chamber. Operation 207 includes depositing a film on the substrate using the process gas and a CVD process. The process gas and the purge gas may combine to form a mixed gas. Operation 209 includes exhausting the mixed gas including the process gas and the purge gas from the substrate processing chamber. It is contemplated in the present disclosure that one or more aspects, features, components, and / or properties of the method 200 may be combined with one or more aspects, features, components, and / or properties of the substrate processing chamber 100.

[0041]

[0043] In this disclosure, it is contemplated that operations of method 200 are performed using controller 181 and substrate processing system 180 shown in FIG. 1A.

[0042]

[0044] The illustrated method 200 is not limited to the order or number of acts shown in FIG. 2 and may include implementations in which one or more of acts 201, 203, 205, 207, and / or 209 are reordered, repeated, added, and / or removed.

[0043]

[0045] Advantages of the present disclosure include preventing diffusion of process gas below the support surface of the pedestal, reducing deposition of material and / or residue on non-substrate component surfaces, increasing process gas, purge gas, and / or gas mixture velocity, reducing delays, increasing throughput, reducing chamber downtime, reducing operating costs, reducing cleaning times, and reducing substrate defects.

[0044]

[0046] An embodiment of the present disclosure includes a protrusion protruding from a first surface of the isolator ring toward an outer circumferential surface of the pedestal, an upper edge of the isolator ring disposed above a support surface of the pedestal, and second flow rates of one or more purge gases having a ratio of the second flow rate to a first flow rate of one or more process gases, the ratio being within a range of 0.25 to 0.75 of the first flow rate.

[0045]

[0047] It is contemplated that one or more aspects disclosed herein may be combined. It is further contemplated that one or more aspects disclosed herein may include some or all of the advantages described above. As an example, a ratio R2 of the second width W2 to the first width W1 of about 0.25 reduces the diffusion of the process gas below the support surface 139 of the pedestal 138 by up to 44%. Furthermore, a ratio R1 of the second flow rate of the purge gas to the first flow rate of the process gas of about 0.50 reduces the diffusion of the process gas below the support surface 139 of the pedestal 138 by an additional 73% (in addition to the 44% reduction). Furthermore, a first distance L1 of the isolator ring 159 of about 2.0 mm reduces the diffusion of the process gas by up to 54% (compared to the 44% reduction).

[0046]

[0048] While the above is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure. It is also contemplated in the present disclosure that one or more aspects of the embodiments described herein may be substituted with one or more of the other aspects described. The scope of the present disclosure is determined by the following claims.

Claims

1. 1. A substrate processing chamber comprising: A chamber body; a showerhead having one or more openings formed on a lower surface thereof; a pedestal disposed within the chamber body, the pedestal having a support surface and an outer circumferential surface, the support surface facing the showerhead; a pumping liner disposed about and surrounding the pedestal, the pumping liner having a first outer surface facing the outer circumferential surface of the pedestal and a second outer surface facing the chamber body; an isolator ring disposed between the pedestal and the pumping liner, a first surface facing the pedestal, the first surface being disposed in a gap from the outer periphery of the pedestal; a second surface facing the pumping liner; and a protrusion extending from the first surface of the isolator ring toward the outer circumferential surface of the pedestal, the protrusion defining a neck portion of the gap between the pedestal and the isolator ring; Isolator ring including A substrate processing chamber comprising:

2. The substrate processing chamber of claim 1 , wherein the isolator ring comprises an electrically insulating material.

3. 10. The substrate processing chamber of claim 1 further comprising a purge gas inlet disposed at a bottom of the chamber body, the isolator ring and the gap being disposed between the purge gas inlet and the showerhead.

4. The substrate processing chamber of claim 3 , wherein the gap is part of a purge gas flow path, and the protrusion defines a flow edge disposed within the purge gas flow path.

5. 1. A substrate processing chamber comprising: the protrusion defines a step surface of the isolator ring; the gap between the first surface of the isolator ring and the outer circumferential surface of the pedestal has a first width; the neck portion between the step surface of the isolator ring and the outer circumferential surface of the pedestal has a second width less than the first width.

10. The substrate processing chamber of claim 1.

6. 6. The substrate processing chamber of claim 5, wherein the second width is a ratio of the first width, the ratio being within a range of 0.25 to 0.

75.

7. 6. The substrate processing chamber of claim 5, wherein the second width is a ratio of the first width, the ratio being within a range of 0.23 to 0.

27.

8. 1. A substrate processing chamber comprising: A chamber body; a showerhead having one or more openings formed on a lower surface thereof; a pedestal disposed within the chamber body, the pedestal having a support surface and an outer circumferential surface, the support surface facing the showerhead; a pumping liner disposed about and surrounding the pedestal, the pumping liner having a first outer surface facing the outer circumferential surface of the pedestal and a second outer surface facing the chamber body; an isolator ring disposed between the pedestal and the pumping liner, a first surface facing the pedestal; a second surface facing the pumping liner; and a tapered upper surface defining an upper edge of the isolator ring, the upper edge of the isolator ring being disposed above the support surface of the pedestal; Isolator ring including A substrate processing chamber comprising:

9. The substrate processing chamber of claim 8 , wherein the tapered upper surface tapers upwardly in a direction from the pumping liner toward the pedestal.

10. 10. The substrate processing chamber of claim 9, wherein the top edge of the isolator ring is disposed at a distance from the lower surface of the showerhead and the support surface of the pedestal is disposed at a gap from the lower surface of the showerhead, the distance being within a range of 50 percent to 100 percent of the gap.

11. The substrate processing chamber of claim 10 , wherein the distance is within a range of 4.0 mm to 7.0 mm.

12. 1. A substrate processing chamber comprising: the first surface of the isolator ring facing the pedestal is disposed in a gap from the outer circumferential surface of the pedestal; the isolator ring further includes a protrusion protruding from the first surface of the isolator ring toward the outer circumferential surface of the pedestal, the protrusion defining a neck portion of the gap between the pedestal and the isolator ring. The substrate processing chamber of claim 10.

13. 1. A substrate processing chamber comprising: the protrusion defines a step surface of the isolator ring; the gap between the first surface of the isolator ring and the outer circumferential surface of the pedestal has a first width; the neck portion between the step surface of the isolator ring and the outer circumferential surface of the pedestal has a second width less than the first width.

13. The substrate processing chamber of claim 12.

14. 14. The substrate processing chamber of claim 13, wherein the second width is a ratio of the first width, the ratio being within a range of 0.25 to 0.

75.

15. 14. The substrate processing chamber of claim 13, wherein the second width is a ratio of the first width, the ratio being within a range of 0.23 to 0.

27.

16. 1. A non-transitory computer readable medium comprising instructions that, when executed, cause a substrate processing chamber to: causing one or more process gases to flow at a first flow rate from a showerhead above a pedestal into a processing region of the substrate processing chamber; causing one or more purge gases to flow from a purge gas inlet at a second flow rate, the second flow rate having a ratio of the second flow rate to the first flow rate, the ratio being within a range of 0.25 to 0.75 of the first flow rate; Non-transitory computer-readable medium.

17. The instructions, when executed, further cause the substrate processing chamber to: causing the one or more purge gases to flow through a purge gas flow path between the pedestal and the isolator ring; causing the one or more purge gases to flow through a neck portion of the purge gas flow passage between the pedestal and the isolator ring.

20. The non-transitory computer readable medium of claim 16.

18. 20. The non-transitory computer readable medium of claim 17, wherein the ratio is within a range of 0.48 to 0.52 of the first flow rate.

19. 20. The non-transitory computer readable medium of claim 18, wherein the purge gas flow path has a first width between the isolator ring and the pedestal, and the neck portion has a second width that is smaller than the first width.

20. 20. The non-transitory computer-readable medium of claim 19, wherein the second width is a ratio of the first width, the ratio being within a range of 0.25 to 0.75.

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