Display device

Abstract

To provide a high-definition display device and a compact display device.SOLUTION: A display device in which a first layer and a second layer are stacked is provided. The first layer includes a gate driver circuit and a source driver circuit. The second layer includes a display part. The gate driver circuit and the source driver circuit are provided so as to have a region overlapping with the display part. The gate driver circuit and the source driver circuit include regions that are not clearly separated and are overlap with each other. Five or more gate driver circuits and five or more source driver circuits can be provided.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] One embodiment of the present invention relates to a display device, an operation method thereof, and an electronic device. The present invention relates to a display device and a manufacturing method thereof. The present invention relates to a method for producing the same.

[0002] Note that one embodiment of the present invention is not limited to the above technical fields. The technical field of one embodiment of the present invention is a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, Electronic device, lighting device, input device, input / output device, driving method thereof, or manufacturing method thereof A semiconductor device functions by utilizing the semiconductor characteristics. This refers to all types of equipment that can [Background technology]

[0003] As a semiconductor material that can be used for transistors, oxide semiconductors using metal oxides have been attracting attention. For example, in Patent Document 1, a plurality of oxide semiconductor layers are stacked, and the plurality of oxide semiconductor layers are Among the semiconductor layers, an oxide semiconductor layer serving as a channel contains indium and gallium, and By increasing the proportion of indium relative to the proportion of gallium, the field effect mobility (simply A semiconductor device having an improved thermal conductivity (hereinafter sometimes referred to as μFE) is disclosed.

[0004] Metal oxides that can be used for the semiconductor layer can be formed by sputtering or the like. Therefore, it can be used for the semiconductor layer of a transistor that constitutes a large display device. Improve and utilize some of the production equipment for crystalline silicon and amorphous silicon transistors. This allows for reduced capital investment. The field effect mobility of the transistor is higher than that of amorphous silicon, so the driver circuit It is possible to realize a highly functional display device having the above-mentioned features.

[0005] In addition, Augmented Reality (AR) or Virtual Reality (VR) Wearable display devices as display devices for Virtual Reality, and Stationary display devices are becoming more and more popular. Examples of wearable display devices include: Head Mounted Display (HMD) and Examples of stationary display devices include head-up displays. Examples include sprays (HUD: Head-Up Displays).

[0006] Furthermore, a digital camera or the like, which is an electronic device having an imaging device, is provided with a An electronic viewfinder is used to check the image before shooting. The electronic viewfinder is equipped with a display unit, and the image is displayed by the imaging device. The obtained image can be displayed as an image on the display unit. For example, in Patent Document 2, An electronic viewfinder that can provide good visibility from the center to the periphery of the image. Indah is disclosed. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2014-7399 A [Patent Document 2] JP 2012-42569 A Summary of the Invention [Problem to be solved by the invention]

[0008] For display devices such as head mounted displays (HMDs) where the display surface is close to the user In contrast, the pixels are easily visible to the user, making the graininess more noticeable, which is detrimental to the immersive experience of AR and VR. The sense of presence and realism may be diminished. Also, electronic viewfinders do not have optical viewfinders. The image displayed on the display unit of the electronic viewfinder is displayed on the eyepiece. The image can be seen by bringing the user's eye close to the electronic viewfinder. The distance between the display unit and the user is reduced. This allows the user to see the pixels on the display unit more clearly. Because the graininess is easily noticeable, it can be felt strongly. In MD and electronic viewfinders, the pixels are not visible to the user. For example, a display device having a pixel density of 1000 ppi or more is desired. It is preferable to set the resolution to 5000 ppi or more, and more preferable to set the resolution to 10000 ppi. In addition, particularly in a display device provided in an electronic viewfinder, For resolutions, 4K (pixel count: 3840 x 2160), 5K (pixel count: 5120 x 2880), It is preferable that an image with a resolution of 1080p or higher be displayed.

[0009] An object of one embodiment of the present invention is to provide a display device having a large number of pixels. An object of one embodiment of the present invention is to provide a display device with high definition. An object of one embodiment is to provide a display device capable of displaying a high-resolution image. Another embodiment of the present invention is to provide a display device that can display a high-quality image. Another object of one embodiment of the present invention is to display a highly realistic image. Another object of the present invention is to provide a display device capable of producing a high-luminance image. It is an object of the present invention to provide a display device capable of displaying an image. An object of the present invention is to provide a display device with a high dynamic range. An object of one embodiment of the present invention is to provide a display device with a narrow frame. An object of one embodiment of the present invention is to provide a small-sized display device. Another object of the present invention is to provide a display device that operates at high speed. Another object of the present invention is to provide a display device with low power consumption. Another object of the present invention is to provide a highly reliable display device. Another object of the present invention is to provide a display device. Another object of the present invention is to provide a novel display device. Another object of the present invention is to provide a novel electronic device. One of the challenges we face is to:

[0010] The description of these problems does not preclude the existence of other problems. It is not necessary for the embodiment to solve all of these problems. can be extracted from descriptions in the specification, drawings, claims, etc. [Means for solving the problem]

[0011] One embodiment of the present invention is a display device in which a first layer and a second layer are stacked, The first layer includes a gate driver circuit and a source driver circuit, and the second layer includes a display The display section has pixels arranged in a matrix, a gate driver circuit, and a The source driver circuit has an area overlapping with the pixel, and the gate driver circuit It is a display device having an area that overlaps with the road.

[0012] Alternatively, in the above aspect, the display device has a DA conversion circuit, and the DA conversion circuit is a potential generating A potential generating circuit includes a source driver circuit and a pass transistor logic circuit. The pass transistor logic circuit is provided outside the source driver circuit. The potential generating circuit has a function of generating a plurality of potentials having different magnitudes, and The register logic circuit receives the image data and, based on the digital value of the image data, The potential generating circuit may have a function of outputting any of the potentials generated by the potential generating circuit.

[0013] Alternatively, in the above aspect, the pixel includes a transistor having a metal oxide in a channel formation region. The metal oxide has an element M (wherein M is Al, Ga, Y, or Sn) and Zn. Good too.

[0014] Another embodiment of the present invention is a display device in which a first layer and a second layer are stacked. The first layer includes a gate driver circuit, a first source driver circuit, and a second source driver circuit. a third source driver circuit, a fourth source driver circuit, and a fifth a display driver circuit; and a second layer including a first display unit, a second display unit, and a third display unit. The first display section has a first pixel, a fourth display section, and a fifth display section. In the first display section, second pixels are arranged in a matrix, and in the third display section, The display section has third pixels arranged in a matrix, and the fourth display section has fourth pixels arranged in a matrix. The fifth display section has fifth pixels arranged in a matrix. the first source driver circuit and the first source driver circuit have an area overlapping the first pixel, The second source driver circuit has an area overlapping the second pixel, and the third source driver circuit has an area overlapping with the third pixel, and the fourth source driver circuit has an area overlapping with the fourth pixel. a fifth source driver circuit having an area overlapping the fifth pixel and a gate driver The first source driver circuit is a display device having an area overlapping with the first source driver circuit.

[0015] Alternatively, in the above aspect, the display device has a DA conversion circuit, and the DA conversion circuit is a potential generating a first pass transistor logic circuit; and a second pass transistor logic circuit. a third pass transistor logic circuit; and a fourth pass transistor logic circuit. a fifth pass transistor logic circuit, and the potential generating circuit includes the first to fifth source The first pass transistor logic circuit is provided outside the first source driver circuit. The second pass transistor logic circuit is provided in the source driver circuit. a third pass transistor logic circuit provided in the third source driver circuit; a fourth pass transistor logic circuit provided in the fourth source driver circuit; The fifth pass transistor logic circuit is provided in the fifth source driver circuit. The potential generating circuit has a function of generating a plurality of potentials having different magnitudes, and includes first to third potentials. The pass transistor logic circuit 5 receives image data and converts the image data into a digital signal. The potential generating circuit may have a function of outputting one of the potentials generated by the potential generating circuit based on the value.

[0016] Alternatively, in the above aspect, the first to fifth pixels each have a metal oxide in a channel formation region. The metal oxide has an element M (M is Al, Ga, Y, or Sn) and Z n.

[0017] Another embodiment of the present invention is a display device in which a first layer and a second layer are stacked. Thus, the first layer includes a gate driver circuit and a source driver circuit, and the second layer includes The display unit has pixels arranged in a matrix, a gate driver circuit, and The gate driver circuit and the source driver circuit have an area overlapping the pixel, and the gate driver circuit The source driver circuit has an area overlapping with the pixel, and the source driver circuit connects the pixel and the pixel to the pixel via the first data line. The source driver circuit is electrically connected to the pixel through the second data line. The source driver circuit generates a first image signal and supplies it to the pixels via the first data line. The source driver circuit has a function of generating a second image signal and supplying the second data. The pixel has a function of supplying an image corresponding to a first image signal and an image corresponding to a second image signal through a line. A display device having a function of displaying an image corresponding to the image signal and an image obtained by superimposing the image signal. do.

[0018] Alternatively, in the above aspect, the display device has a DA conversion circuit, and the DA conversion circuit is a potential generating A potential generating circuit includes a source driver circuit and a pass transistor logic circuit. The pass transistor logic circuit is provided outside the source driver circuit. The potential generating circuit has a function of generating a plurality of potentials having different magnitudes, and The register logic circuit receives the image data and, based on the digital value of the image data, The potential generating circuit may have a function of outputting any of the potentials generated by the potential generating circuit.

[0019] Alternatively, in the above embodiment, the pixel may have a display element, and the display element may be a light-emitting element. stomach.

[0020] Alternatively, in the above embodiment, the display element may be an organic EL element.

[0021] Alternatively, in the above embodiment, the organic EL element may have a tandem structure.

[0022] Alternatively, in the above embodiment, the pixel includes a display element, a first transistor, and a second transistor. a source of the first transistor, a third transistor, and a capacitance element, One of the drains is electrically connected to one of the electrodes of the capacitor. The other of the source and drain of the second transistor is electrically connected to the first data line. One of the source and the drain is electrically connected to the other electrode of the capacitance element. The other of the source and drain of the transistor is electrically connected to the second data line. The other electrode is electrically connected to the gate of the third transistor. One of the source and the drain may be electrically connected to one electrode of the display element.

[0023] Alternatively, in the above-mentioned embodiment, the first and second transistors each have a metal oxide in a channel forming region. The metal oxide has an element M (wherein M is Al, Ga, Y, or Sn) and Zn. This is also fine.

[0024] Alternatively, an electronic device including the display device according to one embodiment of the present invention and a lens according to one embodiment of the present invention may be provided. be. Effect of the Invention

[0025] According to one embodiment of the present invention, a display device having a large number of pixels can be provided. According to one embodiment of the present invention, a display device with high resolution can be provided. It is possible to provide a display device capable of displaying a higher resolution image. According to one embodiment of the present invention, a display device capable of displaying a high-quality image can be provided. Alternatively, according to one embodiment of the present invention, a display device capable of displaying a highly realistic image can be provided. Alternatively, according to one aspect of the present invention, a device for displaying a high brightness image can be provided. According to one embodiment of the present invention, a display device capable of high dynamic range can be provided. Alternatively, according to one embodiment of the present invention, a display device having a narrow frame can be provided. According to one embodiment of the present invention, a small-sized display device can be provided. According to one embodiment of the present invention, a display device that operates at high speed can be provided. According to one embodiment of the present invention, a display device with low power consumption can be provided. According to one embodiment of the present invention, a low-cost display device can be provided. According to one embodiment of the present invention, a highly reliable display device can be provided. According to one embodiment of the present invention, a novel display device can be provided. In addition, a novel display device operation method can be provided. It is possible to provide new electronic devices.

[0026] The description of these effects does not preclude the existence of other effects. An embodiment does not necessarily have to have all of these effects. Effects other than these may also be included. It is possible to extract such information from descriptions in the specification, drawings, claims, etc. [Brief description of the drawings]

[0027] [Figure 1] FIG. 1 is a block diagram showing a configuration example of a display device. [Diagram 2] FIG. 1 is a block diagram showing a configuration example of a display device. [Diagram 3] FIG. 1 is a block diagram showing a configuration example of a display device. [Figure 4] FIG. 1 is a block diagram showing a configuration example of a display device. [Diagram 5] FIG. 1 is a block diagram showing a configuration example of a display device. [Figure 6] FIG. 1 is a block diagram showing a configuration example of a display device. [Figure 7] FIG. 1 is a block diagram showing a configuration example of a display device. [Figure 8] FIG. 1 is a block diagram showing a configuration example of a display device. [Figure 9] FIG. 1 is a circuit diagram showing an example of the configuration of a DA conversion circuit. [Figure 10] FIG. 1 is a block diagram showing an example of the configuration of a shift register. [Figure 11] 1A is a block diagram showing an example of the configuration of a shift register, and FIG. [Figure 12] FIG. 2 is a schematic diagram showing the arrangement of gate driver circuits and source driver circuits. [Figure 13] FIG. 2 is a top view showing a configuration example of a gate driver circuit and a source driver circuit. [Figure 14] 1A, 1B, 1C, 1D, and 1E are diagrams showing examples of pixel configurations. [Figure 15] (A), (B), and (C) are circuit diagrams showing examples of pixel configurations. [Figure 16]1A is a circuit diagram showing an example of a pixel configuration, FIG. 1B is a timing chart showing an example of a pixel operation method, and FIG. 1C and FIG. 1D are circuit diagrams showing example pixel configurations. [Figure 17] (A), (B), (C), and (D) are circuit diagrams showing examples of pixel configurations. [Figure 18] FIG. 1 is a block diagram showing a configuration example of a display device. [Figure 19] 1A to 1C are diagrams illustrating an example of the operation of a display device. [Figure 20] FIG. 1 is a cross-sectional view showing a configuration example of a display device. [Figure 21] FIG. 1 is a cross-sectional view showing a configuration example of a display device. [Figure 22] FIG. 1 is a cross-sectional view showing a configuration example of a display device. [Diagram 23] FIG. 1 is a cross-sectional view showing a configuration example of a display device. [Figure 24] FIG. 1 is a cross-sectional view showing a configuration example of a display device. [Diagram 25] FIG. 1 is a cross-sectional view showing a configuration example of a display device. [Figure 26] 1A to 1E are diagrams showing configuration examples of light-emitting elements. [Figure 27] 1A is a top view illustrating a configuration example of a transistor, and FIGS. [Figure 28] 1A is a top view illustrating a configuration example of a transistor, and FIGS. [Figure 29] 1A is a top view illustrating a configuration example of a transistor, and FIGS. [Diagram 30] 1A, 1B, 1C, 1D, and 1E are perspective views showing examples of electronic devices. [Diagram 31] 1A, 1B, 1C, 1D, 1E, 1F, and 1G are perspective views showing examples of electronic devices. [Diagram 32] FIG. 13 is a graph showing the measurement results of Id-Vd characteristics according to an embodiment. [Diagram 33] FIG. 2 is a diagram showing a configuration of a pixel according to an embodiment. [Diagram 34] 1 is a STEM photograph of a transistor according to an embodiment. [Diagram 35]13A and 13B are diagrams showing the measurement results of Id-Vd characteristics according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] Hereinafter, the embodiments will be described with reference to the drawings. The present invention can be embodied in various forms without departing from the spirit and scope of the present invention. It will be readily understood by those skilled in the art that various modifications and changes may be made to the details of the present invention. The present invention should not be construed as being limited to the description of the following embodiment.

[0029] In addition, in each figure described in this specification, the size, layer thickness, or area of ​​each component is not clearly indicated. The figures may be exaggerated for clarity.

[0030] In addition, the ordinal numbers "first," "second," and "third" used in this specification are intended to indicate a mixture of elements. The numbers are added to avoid confusion and are not intended to be limiting.

[0031] In addition, in this specification, the terms "above" and "below" that indicate an arrangement refer to the positional relationship between components. The relationship between the components is used for convenience in describing the drawings. The above description and the accompanying drawings are to be construed as being illustrative and not restrictive. The above words and phrases are not limited to those used above, but can be rephrased appropriately depending on the situation.

[0032] In addition, in this specification and the like, the functions of the source and drain of a transistor are The polarity of the resistors or the direction of current flow during circuit operation may change. For this reason, the terms source and drain can be used interchangeably.

[0033] In addition, in this specification, "electrically connected" means "something that has some electrical effect" " includes cases where the device is connected via "anything that has some electrical effect." " is not subject to any particular restriction as long as it enables the transmission and reception of electrical signals between the connection objects. For example, "things that have some kind of electrical function" include electrodes, wiring, and transistors. These include switching elements, resistor elements, inductors, capacitors, and other various functions. This includes elements, etc.

[0034] In addition, in this specification and the like, the terms "film" and "layer" are interchangeable. For example, the terms "conductive layer" and "insulating layer" can be used interchangeably with "conductive film" and "insulating film". In some cases, the terms "insulating film" and "film" may be used interchangeably.

[0035] Unless otherwise specified in this specification, the off-state current refers to the current that flows when a transistor is in an off-state. The drain current when the device is in the off state (also called the non-conducting state or cut-off state). , Unless otherwise specified, for n-channel transistors, the voltage between the gate and source, V g s is the threshold voltage V th (For p-channel transistors, V th Higher than ) state.

[0036] In addition, in the drawings, the size, layer thickness, or area may be exaggerated for clarity. Therefore, the scale is not necessarily limited to that shown in the drawings. The figures are merely schematic representations, and are not limited to the shapes or values ​​shown in the drawings. During the process, layers, resist masks, etc. are unintentionally lost due to etching or other processes. However, in order to facilitate understanding, they may not be reflected in the drawings. The same reference numerals are used to indicate the same parts or parts having similar functions, materials, etc. in different drawings. In addition, when referring to similar functions, materials, etc., In such cases, the hatch patterns may be the same and no particular reference numbers may be used.

[0037] In this specification, the term "metal oxide" refers to a metal oxide in a broad sense. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductors (also called OS), etc. For example, when a metal oxide is used in the active layer of a transistor, the metal oxide In other words, when referring to an OS FET, In other words, the transistor may be a transistor including an oxide or an oxide semiconductor.

[0038] (Embodiment 1) In this embodiment, a display device which is one embodiment of the present invention will be described.

[0039] One embodiment of the present invention relates to a display device in which a first layer and a second layer are stacked. The first layer includes a gate driver circuit and a source driver circuit, and the second layer includes a display The gate driver circuit and the source driver circuit have an area overlapping with the display section. In this way, the frame of the display device of one embodiment of the present invention can be narrowed. , and can be made smaller.

[0040] In addition, the gate driver circuit and the source driver circuit are not clearly separated and have overlapping areas. This allows the display device to have a narrower frame than when the overlapping area is not present. It is possible to reduce the size of the device.

[0041] Here, the gate driver circuit and the source driver circuit are configured not to overlap with the display unit. In this case, the gate driver circuit and the source driver circuit are provided, for example, on the outer periphery of the display unit. In this case, providing more than two rows and two columns of display units requires a source driver circuit. On the other hand, in the display device according to one embodiment of the present invention, By providing the circuit and the source driver circuit in a layer different from the layer in which the display portion is provided, Since the display unit can be provided with an area overlapping the display unit, the display unit can have more than two rows and two columns. That is, the display device of one embodiment of the present invention can be provided with a gate driver circuit. Five or more of each of the pixel circuits and the source driver circuits can be provided.

[0042] As described above, the gate driver circuit and the source driver circuit are arranged to overlap with the display section. By providing the gate driver circuit and the source driver circuit so as to overlap with the display section, Therefore, the present invention can be implemented in a manner that allows the display device to operate at a higher speed than a display device having a similar structure. The definition of the display device of one embodiment is improved by a gate driver circuit and a source driver circuit overlapping with a display portion. For example, the display device according to one embodiment of the present invention can be The pixel density can be 1000ppi or more, and can be 5000ppi or more. In addition, the image displayed by the display device according to one embodiment of the present invention can be displayed at 10,000 ppi. The resolution of the image that can be displayed is determined by the gate driver circuit and the source driver circuit. The resolution of the image can be increased beyond that which can be displayed by a non-overlapping display device. Cut.

[0043] <Display device configuration example 1> FIG. 1 is a block diagram showing an example of the configuration of a display device 10 which is a display device according to one embodiment of the present invention. The display device 10 includes a layer 20 and a layer 30 laminated on top of the layer 20. The layer 20 is a gate. The layer 30 includes a gate driver circuit 21, a source driver circuit 22, and a circuit 40. The display unit 33 has pixels 34 arranged in a matrix. An interlayer insulating layer can be provided between the layers 30. Note that the layer 20 is laminated above the layer 30. It may also be provided.

[0044] The circuit 40 is electrically connected to the source driver circuit 22. The input / output terminal 10 may be electrically connected to other circuits.

[0045] The pixels 34 in the same row are electrically connected to the gate driver circuit 21 via the wiring 31. The pixels 34 in one column are electrically connected to the source driver circuit 22 via wiring 32. The wiring 31 functions as a scanning line, and the wiring 32 functions as a data line. .

[0046] In FIG. 1, the pixels 34 in one row are electrically connected by one wiring 31, and the pixels in one column are Although the element 34 is electrically connected by a single wiring 32, For example, the pixels 34 in one row are electrically connected to each other by two or more wirings 31. Alternatively, one column of pixels 34 may be electrically connected by two or more wirings 32. That is, for example, one pixel 34 may be electrically connected to two or more scanning lines. It may be electrically connected to two or more data lines. For example, one wiring 31 may be electrically connected to two or more rows of pixels 34. A line 32 may be electrically connected to two or more columns of pixels 34. The line 31 may be shared by two or more rows of pixels 34, or one wiring 32 may be connected to two or more columns of pixels 34. You may share it with others.

[0047] The gate driver circuit 21 generates signals for controlling the operation of the pixels 34 and connects the wiring 31 to the The source driver circuit 22 has a function of supplying the image signal to the pixel 34 via the The circuit 40 has a function of generating a signal and supplying the signal to the pixel 34 via the wiring 32. For example, the image data on which the image signal generated by the source driver circuit 22 is based is received. The circuit 40 has a function of supplying the received image data to the source driver circuit 22. has a function as a control circuit that generates a start pulse signal, a clock signal, etc. In addition, the circuit 40 has the following features that the gate driver circuit 21 and the source driver circuit 22 do not have. It can be a circuit having a function.

[0048] The display unit 33 displays an image corresponding to the image signal supplied to the pixels 34 by the source driver circuit 22. Specifically, the pixel 34 emits light with a brightness corresponding to the image signal. By outputting the key, an image is displayed on the display unit 33.

[0049] In FIG. 1, the positional relationship between the layer 20 and the layer 30 is indicated by a dashed line and a hollow circle. The white circle of layer 20 and the white circle of layer 30 connected by , overlap each other. The same notation is used in the following figures.

[0050] The display device 10 includes a gate driver circuit 21 and a source driver circuit 22 provided on a layer 20. 2 has an area overlapping with the display unit 33. For example, the gate driver circuit 21 and the The gate driver circuit 22 has an area overlapping with the pixel 34. The source driver circuit 22 and the display unit 33 are laminated so as to have an overlapping area. By providing the display device 10 in this manner, the frame of the display device 10 can be narrowed and the display device 10 can be made smaller. do.

[0051] In addition, the gate driver circuit 21 and the source driver circuit 22 are not clearly separated but overlap each other. The region is referred to as region 23. By having region 23, Therefore, the area occupied by the source driver circuit 21 and the source driver circuit 22 can be reduced. Even if the area of ​​the display unit 33 is small, the gate driver circuit 21 and the source driver The gate driver circuit 22 can be provided without protruding from the display unit 33. The area of ​​the source driver circuit 21 and the source driver circuit 22 that do not overlap with the display unit 33 is reduced. As a result, the frame can be made narrower than when the region 23 is not provided. It is also possible to reduce the size of the device.

[0052] The circuit 40 can be provided so as not to overlap with the display unit 33. It may be provided so as to have an area overlapping with the display unit 33 .

[0053] In FIG. 1, a layer 20 is provided with one gate driver circuit 21 and one source driver circuit 22. In the example shown, one display unit 33 is provided on the layer 30. In other words, the display unit provided on the layer 30 may be divided. This is a modified example of the configuration shown in FIG. 1, and shows a display unit 33 having three rows and three columns in a layer 30. The figure shows an example of the configuration of the device 10. The layer 30 is provided with two rows and two columns of display units 33. Alternatively, the display units 33 may be provided in four rows and four columns or more. The number of rows and columns of the display unit 33 may be different. For example, all the display units 33 can be used to display one image.

[0054] In FIG. 2, the wiring 31 and the wiring 32 are omitted for clarity of the drawing. The display device 10 having the configuration shown in FIG. 2 is provided with wiring 31 and wiring 32. Although the electrical connection of 40 is omitted, in reality, it is electrically connected to the source driver circuit 22. In the other figures, some components are omitted as in Figure 2. There may be cases where this occurs.

[0055] The layer 20 includes a gate driver circuit 21 and a source driver circuit 22, for example, a display unit 33. In this case, the gate driver circuit 21 can be provided in the same number as the gate driver The circuit 21 may be provided so as to overlap with a display section 33 in which pixels 34 to which signals are supplied are provided. In addition, the source driver circuit 22 can be configured to supply an image signal. The display unit 33 may be provided so as to overlap with the display unit 33 provided with the pixels 34 that supply light.

[0056] A plurality of display units 33 are provided, and gate driver circuits 21 and source driver circuits By providing the pixel 22, the number of pixels 34 provided in one display unit 33 can be reduced. The multiple gate driver circuits 21 can be operated in parallel. The plurality of source driver circuits 22 can be operated in parallel. Therefore, for example, the time required to write an image signal corresponding to one frame of an image to the pixels 34 can be Therefore, the length of one frame period can be shortened. The operation speed of the display device 10 can be increased. This allows the number of the pixels 4 to be increased, thereby improving the resolution of the display device 10. The resolution of an image that can be displayed by the display device according to one embodiment of the present invention can be controlled by a gate driver circuit. The display device can display the image by using a display device in which the circuit and the source driver circuit do not overlap with the display unit. The image resolution can be increased by more than 1000x the clock frequency. Therefore, the power consumption of the display device 10 can be reduced.

[0057] Here, in the case where the gate driver circuit and the source driver circuit are configured not to overlap with the display section, In this case, the gate driver circuit and the source driver circuit may be provided, for example, on the outer periphery of the display unit. In this case, providing more than two rows and two columns of display sections requires the On the other hand, in the display device 10, the gate driver circuit and the source By providing the driver circuit on a layer different from the layer on which the display unit is provided, Therefore, as shown in FIG. 2, the number of rows and columns can be increased by more than two. In other words, the display device 10 includes a gate driver circuit and a source Five or more driver circuits can be provided for each.

[0058] As described above, the display device 10 has a gate driver circuit and a source driver circuit overlapping with the display unit. Therefore, the display device 1 can be operated at a higher speed than a display device having a configuration that does not include the above-mentioned. The resolution of 0 is achieved by using a configuration in which the gate driver circuit and source driver circuit do not overlap with the display unit. For example, the pixel density of the display device 10 can be increased to 1000 ppi or more. It can be 5000ppi or more, and can be 10000ppi or more. Therefore, a high-quality image with less graininess can be displayed on the display device 10. Therefore, the display device 10 can display highly realistic images. Devices where the display is close to the user, especially portable electronic devices and wearable electronic devices It can be suitably used in VR devices, AR devices, and e-book terminals. Furthermore, the present invention can be suitably used in digital equipment, which is an electronic device having an image pickup device. It is also suitable for use in viewfinders such as electronic viewfinders installed in mobile cameras. There can be.

[0059] The resolution of the image that can be displayed by the display device 10 is also determined by the gate driver circuit and The display device can be configured so that the source driver circuit does not overlap with the display unit. For example, the display device 10 can be used as a viewfinder. When the display device 10 is connected to the HDMI 2.0 port, the display device 10 can display images with a resolution of 4K, 5K, or higher. Cut.

[0060] In addition, a plurality of source driver circuits 22 and the like are provided on the layer 20, and a plurality of display units 33 are provided on the layer 30. Even in the configuration in which the display device 10 is provided with the circuit 40, the display device 10 can be provided with the circuit 40 in the same manner as in the case shown in FIG. Therefore, as shown in FIG. 2, the circuit 40 can The circuit 40 may be provided so as not to overlap with the display unit 33. It may be provided so as to have an area overlapping with portion 33 .

[0061] FIG. 2 shows an example of a configuration in which the number of gate driver circuits 21 is the same as the number of display units 33. However, one embodiment of the present invention is not limited to this. 1 shows a configuration example of the display device 10 in which the number of driver circuits 21 is the same as the number of columns of the display unit 33. In the display device 10 having the configuration shown in FIG. 3, three columns of display units 33 are provided. In addition, three gate driver circuits 21 are provided. Also, three rows of display units 33 are provided. The display sections 33 arranged in three rows and one column share one gate driver circuit 21.

[0062] FIG. 4 shows a modified example of the configuration shown in FIG. 2, in which a plurality of display units 33 are provided, and a gate driver circuit 4 shows an example of the configuration of the display device 10 in which one path 21 is provided. In the display device 10, the display section 33 having three rows and three columns shares one gate driver circuit 21. In the display device 10 having the configuration shown in FIG. A non-overlapping configuration is possible.

[0063] Although not shown, the source driver circuits 22 are also provided in the same number as the display units 33. The number of source driver circuits 22 included in the display device 10 may be determined based on the number of source driver circuits provided in the display device 10. The number of display units 33 may be greater or less than the number of display units 33 that can be mounted.

[0064] FIG. 1 shows a configuration example in which the circuit 40 is provided on the layer 20. FIG. 5 shows a variation of the configuration shown in FIG. 1 in which circuitry 40 is provided on layer 30. In addition, the elements constituting the circuit 40 are arranged as layers 20 and They may be provided dispersedly in layer 30 .

[0065] FIG. 1 shows an example of a configuration in which one display unit 33 and one gate driver circuit are provided. Alternatively, the number of gate driver circuits may be greater than the number of display units 33. FIG. 6 shows the configuration shown in FIG. This is a modified example, in which two gate driver circuits (gate driver circuits 2 shows an example of the configuration of the display device 10 when a gate driver circuit 21a and a gate driver circuit 21b are provided. .

[0066] In the display device 10 having the configuration shown in FIG. 6, the pixels 34 in the odd-numbered rows are gated via the wiring 31a. The even-numbered pixels 34 are electrically connected to the driver circuit 21a and gated via the wiring 31b. The wiring 31a and the wiring 31b are electrically connected to the light source driver circuit 21b. Similar to 31, it functions as a scanning line.

[0067] The gate driver circuit 21a generates signals for controlling the operation of the pixels 34 in the odd-numbered rows. The gate driver circuit has a function of supplying the signal to the pixel 34 via the wiring 31a. 21b generates a signal for controlling the operation of the pixels 34 in the even-numbered rows, and transmits the signal through the wiring 31b. The pixel 34 receives the signal via the pixel 34 .

[0068] The gate driver circuit 21a and the gate driver circuit 21b are Similarly, the display unit 33 has an overlapping area. For example, the gate driver circuit 21a and The gate driver circuit 21b is arranged in a region overlapping with the pixel 34, similar to the gate driver circuit 21. In addition, the gate driver circuit 21a is clearly distinguished from the source driver circuit 22. The gate driver circuit 21b has an overlapping region 23a. , the source driver circuit 22 and the pixel circuit 23b are not clearly separated from each other, but overlap with each other.

[0069] In the display device 10 having the configuration shown in FIG. 6, the gate driver circuit 21a is operated to drive the odd-numbered rows After writing the image signals to all the pixels 34, the gate driver circuit 21b is operated to In other words, the image signal can be written to all the pixels 34 in the row in the configuration shown in FIG. The display device 10 can be operated in an interlaced manner. By operating the display device 10 in this manner, the operation of the display device 10 can be accelerated and the frame frequency can be increased. In addition, the number of pixels 34 to which an image signal is written during one frame period can be controlled by programming. This can be reduced to half of the time required when the display device 10 is operated using the progressive method. Therefore, when the display device 10 is operated in the interlace mode, the image is displayed in the progressive mode. Since the clock frequency can be made smaller than when the display device 10 is operated in parallel, the power consumption of the display device 10 can be reduced. Power consumption can be reduced.

[0070] FIG. 1 shows a configuration example in which only one end of the wiring 32 is connected to the source driver circuit 22. However, the wiring 32 may be connected to the source driver circuit 22 at multiple points. When the source driver circuit 22 is connected to both ends of the wiring 32, A configuration example is shown. By connecting a plurality of points of the wiring 32 to the source driver circuit 22, This makes it possible to suppress signal delays and the like caused by wiring resistance, parasitic capacitance, and the like. This enables the operation of the display device 10 to be speeded up.

[0071] In addition to the one end and the other end of the wiring 32, other parts of the wiring 32 are connected to the source driver circuit 2. For example, the center of the wiring 32 may be connected to the source driver circuit 22. The number of connections between the wiring 32 and the source driver circuit 22 may be increased. This makes it possible to further suppress signal delays and the like, and to further increase the speed of the operation of the display device 10. For example, one end of the wiring 32 and the center of the wiring 32 may be a source drain. The other end of the wiring 32 is connected to the source driver circuit 22. It's okay.

[0072] In addition, when one source driver circuit 22 is connected to a plurality of points of the wiring 32, as shown in FIG. As shown in the figure, the area occupied by the source driver circuit 22 becomes large. The display driver circuit 22 is laminated so as to have an area overlapping with the display unit 33. In this way, it is possible to prevent the display device 10 from becoming large. The entire source driver circuit 21 overlaps with the source driver circuit 22 without being clearly separated. Even when one source driver circuit 22 is connected to multiple points of the wiring 32, Alternatively, only a portion of the gate driver circuit 21 may overlap with the source driver circuit 22 .

[0073] Note that the wiring 31 may be connected to one gate driver circuit 21 at multiple locations. This also makes it possible to suppress signal delays and the like, and to speed up the operation of the display device 10. In the case of such a configuration, the occupied area is large, similar to the source driver circuit 22 shown in FIG. However, the gate driver circuit 21 is laminated so as to have an area overlapping the display unit 33. Since the display device 10 is arranged in this manner, it is possible to prevent the display device 10 from becoming large.

[0074] The configurations of the display device 10 shown in FIGS. 1 to 7 can be appropriately combined. For example, 2 and the configuration shown in FIG. 6. In this case, the display device 10 For example, a plurality of display units 33 are provided, and the gate driver circuit 21 is connected to the display unit 33 in a number of units. In this way, the number of source driver circuits 22 can be doubled to the number of display units 33. Cut.

[0075] <Configuration Example of Circuit 40 and Source Driver Circuit 22> FIG. 8 is a block diagram showing an example of the configuration of the circuit 40 and the source driver circuit 22. Although only one source driver circuit 22 is shown in FIG. 8, the circuit 40 may include multiple source drivers. The power supply circuit 21 may be electrically connected to the driver circuit 22.

[0076] The circuit 40 includes a receiving circuit 41, a serial-to-parallel conversion circuit 42, and a potential generating circuit 46a. The source driver circuit 22 includes a buffer circuit 43 and a shift register circuit 44. a latch circuit 45, a pass transistor logic circuit 46b, and an amplifier circuit 47. Here, the potential generating circuit 46a and the pass transistor logic circuit 46b are These constitute a digital-to-analog conversion circuit (hereinafter, referred to as a DA conversion circuit) 46 .

[0077] The receiving circuit 41 is electrically connected to a serial-parallel conversion circuit 42. The conversion circuit 42 is electrically connected to a buffer circuit 43, which is a shift register. The shift register circuit 44 is electrically connected to the latch circuit 45. The latch circuit 45 and the potential generating circuit 46a are electrically connected to each other. The pass transistor logic circuit 46 is electrically connected to the pass transistor logic circuit 46b. b is electrically connected to the input terminal of the amplifier circuit 47, and the output terminal of the amplifier circuit 47 is connected to the wiring 3 2 is electrically connected to

[0078] The receiving circuit 41 receives image data that is the basis of the image signal generated by the source driver circuit 22. The image data may be single-ended image data. The receiving circuit 41 is an LVDS (Low Voltage Differential When receiving image data using a data transmission signal such as the IEEE 802.11b Signaling, the internal processing The device may have a function for converting the received signal into a signal standard that can be handled by the device.

[0079] The serial-to-parallel conversion circuit 42 converts the single-ended image data output by the receiving circuit 41 into The circuit 40 is provided with a serial-to-parallel conversion circuit 42. As a result, the load when transmitting image data from the circuit 40 to the source driver circuit 22, etc. Even if it is large, image data and the like can be transmitted from the circuit 40 to the source driver circuit 22 and the like. You will be able to do it.

[0080] The buffer circuit 43 may be, for example, a unity gain buffer. 43 outputs the same image data as that output from the serial-parallel conversion circuit 42. By providing a buffer circuit 43 in the source driver circuit 22, The potential corresponding to the image data output from the real-to-parallel conversion circuit 42 is output from the circuit 40. Even if the signal is reduced due to wiring resistance or the like when it is transmitted to the source driver circuit 22, the reduction This allows the power supply from the circuit 40 to the source driver circuit 22, etc. Even if the load during transmission of image data or the like is large, the driving capability of the source driver circuit 22 or the like is not reduced. can be suppressed.

[0081] The shift register circuit 44 has a function of generating a signal for controlling the operation of the latch circuit 45. The latch circuit 45 holds or outputs the image data output by the buffer circuit 43. The latch circuit 45 has a function of holding or outputting image data. Whether to perform this is selected based on a signal supplied from the shift register circuit 44.

[0082] The DA conversion circuit 46 converts the digital image data output by the latch circuit 45 into an analog image data. The potential generating circuit 46a has a function of converting the digital image data into a digital image signal. A function of generating a type of potential according to the number of bits and supplying it to the pass transistor logic circuit 46b. For example, the DA conversion circuit 46 converts 8-bit image data into an analog image signal. When the potential generating circuit 46a has a function of converting the potential, the potential generating circuit 46a converts the potential into the potential of 256 kinds of potentials having different magnitudes. An electrical potential can be generated.

[0083] The pass transistor logic circuit 46b receives image data from the latch circuit 45. Based on the digital value of the image data, the potential generating circuit 46a generates one of the potentials. For example, the larger the digital value of the image data, the greater the pass transition. The potential output by the pass transistor logic circuit 46b can be increased. The potential output from the logic circuit 46b can be used as an image signal.

[0084] As shown in FIG. 8, in the display device 10, the circuit constituting the DA conversion circuit 46 is a source driver. The circuit 22 and the circuit 40 may be provided separately. It is preferable to provide a transistor logic circuit such as 46b for each source driver circuit. The circuit is provided in the source driver circuit 22, and the source driver circuit, such as the potential generating circuit 46a, Circuits that do not need to be provided for each path can be provided in the circuit 40. For example, the DA conversion circuit 46 may be entirely provided in the source driver circuit 22. Since the area occupied by the source driver circuit 22 can be reduced by this, it is preferable to provide the source driver circuit 22 on the layer 20. The number of source driver circuits 22 can be increased. The number of the display units 33 can be increased, and the operation speed of the display device 10 can be increased, the power consumption can be reduced, and the accuracy can be improved. This allows for an improvement in the fineness of images and an increase in the resolution of images that can be displayed. In the circuits other than the conversion circuit 46, the components of the circuits are connected to the source driver circuit 22 and the circuit The configuration can be such that the number of sensors is 40.

[0085] As shown in FIG. 8, the circuit constituting the DA conversion circuit 46 is a source driver circuit 22. In the case where the potential generating circuit 46a is provided in a distributed manner in the circuit 40, the display device 10 may include, for example, and the number of pass transistor logic circuits 46b is the same as the number of source driver circuits 22. The configuration can be such that:

[0086] The amplifier circuit 47 amplifies the image signal output by the pass transistor logic circuit 46b. , it has a function of outputting to the wiring 32 having a function as a data line. By providing the amplifier circuit 47, the image signal can be stably supplied to the pixel 34. As the amplifier circuit 47, a voltage follower circuit having an operational amplifier or the like can be applied. In addition, when a circuit having a differential input circuit is used as the amplifier circuit, the offset voltage of the differential input circuit is preferably made as close to 0V as possible. By providing it, the image signal can be stably supplied to the pixel 34. As the amplifier circuit 47, a voltage follower circuit having an operational amplifier or the like can be applied. In addition, when a circuit having a differential input circuit is used as the amplifier circuit, the offset voltage of the differential input circuit is preferably made as close to 0V as possible. In addition, when a circuit having a differential input circuit is used as the amplifier circuit, the offset voltage of the differential input circuit is preferably made as close to 0V as possible. The offset voltage of the differential input circuit is preferably made as close to 0V as possible.

[0087] Note that the circuit 40 can be provided with various circuits in addition to the reception circuit 41, the serial-parallel conversion circuit 42, and the potential generation circuit 46a. For example, the circuit 40 can be provided with a control circuit having a function of generating a start pulse signal, a clock signal, and the like. In addition to the reception circuit 41, the serial-parallel conversion circuit 42, and the potential generation circuit 46a, the circuit 40 can be provided with various circuits. For example, the circuit 40 can be provided with a control circuit having a function of generating a start pulse signal, a clock signal, and the like. In addition to the reception circuit 41, the serial-parallel conversion circuit 42, and the potential generation circuit 46a, the circuit 40 can be provided with various circuits. For example, the circuit 40 can be provided with a control circuit having a function of generating a start pulse signal, a clock signal, and the like.

[0088] <Configuration example of the DA conversion circuit 46> FIG. 9 is a circuit diagram showing a configuration example of a potential generation circuit 46a and a pass transistor logic circuit 46b that constitute the DA conversion circuit 46. The DA conversion circuit 46 having the configuration shown in FIG. 9 can convert 8-bit image data D<1> to D<8> into an analog image signal IS. FIG. 9 is a circuit diagram showing a configuration example of a potential generation circuit 46a and a pass transistor logic circuit 46b that constitute the DA conversion circuit 46. The DA conversion circuit 46 having the configuration shown in FIG. 9 can convert 8-bit image data D<1> to D<8> into an analog image signal IS. FIG. 9 is a circuit diagram showing a configuration example of a potential generation circuit 46a and a pass transistor logic circuit 46b that constitute the DA conversion circuit 46. The DA conversion circuit 46 having the configuration shown in FIG. 9 can convert 8-bit image data D<1> to D<8> into an analog image signal IS. It can be converted into an analog image signal IS.

[0089] In this specification, for example, the first-bit image data D is described and shown as image data D<1>, the second-bit image data D is described and shown as image data D<2>, and the eighth-bit image data D is described and shown as image data D<8>. In this specification, for example, the first-bit image data D is described and shown as image data D<1>, the second-bit image data D is described and shown as image data D<2>, and the eighth-bit image data D is described and shown as image data D<8>. In this specification, for example, the first-bit image data D is described and shown as image data D<1>, the second-bit image data D is described and shown as image data D<2>, and the eighth-bit image data D is described and shown as image data D<8>.

[0090] The potential generation circuit 46a having the configuration shown in FIG. 9 has resistor elements 48[1] to 48

[0256] , and these are connected in series. That is, the DA conversion circuit 46 can be a resistor string type DA conversion circuit. That is, the DA conversion circuit 46 can be a resistor string type DA conversion circuit.

[0091] A potential VDD can be supplied to one terminal of the resistor element 48[1]. A potential VSS can be supplied to one terminal of resistor 8

[0256] . The terminals of the element 48[1] to the resistor element 48

[0256] are connected to potentials V1 to V2 of different magnitudes. V 256 In FIG. 9, the potential V1 is set to the potential VDD. The configuration of the potential generating circuit 46a is shown. 256 is set to potential VSS. Alternatively, the resistor element 48

[0256] may not be provided, and the potential V1 may be set to the potential VDD and the potential V 25 6 may be at potential VSS.

[0092] In this specification, the potential VDD may be, for example, a high potential, and the potential VSS may be, for example, The low potential may be, for example, the ground potential. In addition, the high potential is a potential higher than the low potential, and if the low potential is the ground potential, it is considered to be a positive potential. It is possible.

[0093] The pass transistor logic circuit 46b having the configuration shown in FIG. Specifically, the pass transistor logic circuit 46b is configured as follows for each stage: It is electrically branched into two paths, giving a total of 256 paths. In other words, the pass transistors 49 are electrically connected in a tournament fashion. The following is output from either the source or the drain of the eighth-stage pass transistor 49, which is the final stage: An analog image signal IS can be output.

[0094] For example, image data D <1> can be supplied to the first stage pass transistor 49, Image data D <2> can be supplied to the second stage pass transistor 49, and the image data D <8> can be supplied to the eighth-stage pass transistor 49. The potential of IS is set to one of potentials V1 to V 256 Either Therefore, digital image data can be converted into an analog image signal IS. can.

[0095] In addition, the pass transistor logic circuit 46b shown in FIG. Although both a p-channel type pass transistor 49 and a p-channel type pass transistor 49 are provided, Alternatively, only the channel-type pass transistor 49 may be provided. Data D <1> Image data D <8> In addition, these complementary data are transferred to the pass transistor 4 9, the pass transistor logic circuit 46b is provided with a pass The transistors 49 may all be n-channel transistors.

[0096] The configuration shown in FIG. 9 has a function of performing DA conversion on image data D with a bit number other than 8 bits. The same can be applied to the DA conversion circuit 46. For example, the potential generating circuit 46a includes a resistor element 4 8, and 1024 or 1023 pass transistors are provided in the pass transistor logic circuit 46b. By providing the transistor 49, the DA conversion circuit 46 converts the 10-bit image data D into It can have a function as a DA conversion circuit.

[0097] <Configuration Example of Gate Driver Circuit 21> FIG. 10 is a block diagram showing a configuration example of the gate driver circuit 21. The circuit 21 is a shift register circuit S, which is composed of a plurality of set-reset flip-flops. The shift register circuit SR is electrically connected to the wiring 31 having the function of a scanning line. and has a function of outputting a signal to the wiring 31.

[0098] The signal RES is a reset signal. By setting the signal RES to a high potential, for example, the shift register The output of the SR circuit can be set to a low potential. The signal SP is a start pulse signal. By inputting the signal to the gate driver circuit 21, the shift register circuit SR The signal PWC is a pulse width control signal. The signal output from the register circuit SR to the wiring 31 has a function of controlling the pulse width of the signal. CLK[1], signal CLK[2], signal CLK[3], and signal CLK[4] are clocks. The shift register SR has signals CLK[1] to CLK[4]. For example, two signals can be input.

[0099] In the configuration shown in FIG. 10, the wiring 31 electrically connected to the shift register circuit SR is By using the above wiring, the shift register circuit 44 etc. of the source driver circuit 22 can be can also be applied to

[0100] FIG. 11A shows a signal input to the shift register circuit SR and a 11A is a diagram showing a signal output from R. In FIG. 11A, 13 shows a case where signals CLK[1] and CLK[3] are input.

[0101] The signal FO is an output signal, for example, a signal output to the wiring 31. The signal SROUT is This is a shift signal, and can be the signal LIN input to the next stage shift register circuit SR. As described above, among the signals shown in FIG. 11(A), the signal RES, the signal PWC, the signal CLK[ 1], signal CLK[3], and signal LIN are input to the shift register circuit SR. The signal FO and the signal SROUT are signals output from the shift register circuit SR. do.

[0102] FIG. 11B shows a shift register circuit SR whose input and output signals are the signals shown in FIG. 11A. 1 is a circuit diagram showing a configuration example of a shift register circuit SR. The capacitor 63 has a capacitance element 64 to a capacitance element 66.

[0103] One of the source and drain of the transistor 51 is the source or drain of the transistor 52. one of the inputs of the transistor 51 and the source or drain of the transistor 56 and the source or drain of the transistor 59. The gate of the transistor 52 is electrically connected to one of the drain and the gate of the transistor 53. One of the source or drain of the transistor 53, and one of the source or drain of the transistor 54 , one of the source or drain of the transistor 55, the gate of the transistor 58, The gate of the transistor 61 and one electrode of the capacitance element 64 are electrically connected to the transistor 61. The other of the source and drain of the transistor 56 is connected to the gate of the transistor 57 and the capacitance element 65 The other electrode of the source or drain of the transistor 59 is electrically connected to the is electrically connected to the gate of the transistor 60 and one electrode of the capacitor 66. One of the source or drain of the transistor 60 is connected to the source or drain of the transistor 61. The drain electrode is electrically connected to the gate of the transistor 62 and the other electrode of the capacitor 66. This is being continued.

[0104] A signal LIN is input to the gate of the transistor 51 and the gate of the transistor 55. The signal CLK[3] is input to the gate of the transistor 53. A signal RES is input to the gate of the transistor 57. A signal CLK[1] is input to the other of the source and drain of the transistor 60. A signal PWC is input to this terminal.

[0105] One of the source or drain of the transistor 62 and the source or drain of the transistor 63 One of the inputs is electrically connected to the wiring 31, and as described above, the signal F The other of the source or drain of the transistor 57 and the source of the transistor 58 are connected to each other. A signal SROUT is output from one of the source or drain electrodes of the capacitor element 65 and the other electrode of the capacitor element 65. will be done.

[0106] The other of the source or drain of the transistor 51, the source or drain of the transistor 53 the other of the source or drain of transistor 54, the gate of transistor 56, The gate of the transistor 59 and the other of the source and drain of the transistor 62 are connected to a potential The other of the source and drain of the transistor 52 is connected to the transistor 55. the other of the source or drain of transistor 58; the other of the source or drain of transistor the other of the source or drain of the transistor 61, the other of the source or drain of the transistor 63, The other electrode of the capacitor 64 is supplied with a potential VSS.

[0107] The transistor 63 is a bias transistor and functions as a constant current source. A bias potential Vbias can be supplied to the gate of the transistor 63. do.

[0108] The transistor 62 and the transistor 63 form a source follower circuit 67. By providing a source follower circuit 67 in the shift register circuit SR, Even if signal attenuation occurs due to wiring resistance, parasitic capacitance, etc. inside the SR circuit, This can suppress the drop in the potential of the signal FO caused by the above-mentioned problem. The source follower circuit 67 also functions as a buffer. As long as it has the above-mentioned function, a circuit other than a source follower circuit may be used.

[0109] <Example of configuration of area 23> FIG. 12 shows an area 2 where the gate driver circuit 21 and the source driver circuit 22 overlap. 12 is a diagram showing a configuration example of the gate driver circuit 23. As shown in FIG. a region having elements constituting the source driver circuit 22; In FIG. 12, the gate driver circuit 21 is configured as follows. A transistor 71 is shown as an element constituting the source driver circuit 22. Transistor 72 is shown.

[0110] In FIG. 12, the regions having elements constituting the gate driver circuit 21 are set in the first and third rows. The second and fourth rows are provided with regions having elements that constitute the source driver circuit 22. In the region 23, the elements constituting the gate driver circuit 21 are provided. Dummy elements are provided between the respective regions. Dummy elements are provided between each region having a corresponding element. Dummy transistors 73 are provided as dummy elements on all four sides of transistor 1 and on all four sides of transistor 72. 1 shows an example of the configuration of the region 23 when provided.

[0111] By providing a dummy element such as a dummy transistor 73 in the region 23, the dummy element The impurities are absorbed by the transistor 71 and the transistor 72, and the impurities are diffused into the transistor 73 and the transistor 74. This can reduce the reliability of the transistors 71 and 72. Therefore, the reliability of the display device 10 can be improved. In this case, the transistors 71 and 72 and the dummy transistor 73 are matrix transistors. However, they do not have to be arranged in a matrix.

[0112] 13 is a top view showing an example of the configuration of a region 70 that is a part of the region 23. As shown in FIG. 1, region 70 includes one transistor 71, one transistor 72, and a dummy As shown in FIG. 13, the transistor 71 is The semiconductor device has a channel forming region 110, a source region 111, and a drain region 112. In addition, a gate electrode 113 is provided so as to have a region overlapping with the channel formation region 110 .

[0113] In FIG. 13, components such as a gate insulator are omitted. The hole formation region, the source region, and the drain region are not clearly separated.

[0114] An opening 114 is provided in the source region 111, and the source region 111 is The drain region 112 is electrically connected to a wiring 115. An opening 116 is provided in the drain region 112. The drain region 112 is electrically connected to a wiring 117 through the opening 116 .

[0115] An opening 118 is provided in the gate electrode 113, and the gate electrode 113 is The wiring 115 is electrically connected to the wiring 121. The wiring 115 is provided with an opening 119. The wiring 115 is electrically connected to the wiring 122 via the portion 119. An opening 120 is provided, and the wiring 117 is electrically connected to the wiring 123 through the opening 120. That is, the source region 111 is electrically connected to the wiring 122 via the wiring 115. The drain region 112 is electrically connected to a wiring 123 via a wiring 117 .

[0116] The transistor 72 includes a channel forming region 130, a source region 131, and a drain region 132. 32. Also, the gate electrode 32 is formed so as to have an area overlapping with the channel forming region 130. It has an electrode 133.

[0117] An opening 134 is provided in the source region 131, and the source region 131 is The drain region 132 is electrically connected to a wiring 135. An opening 136 is provided in the drain region 132. The drain region 132 is electrically connected to a wiring 137 through the opening 136 .

[0118] An opening 138 is provided in the gate electrode 133, and the gate electrode 133 is The wiring 135 is electrically connected to the wiring 141. The wiring 135 is provided with an opening 139. The wiring 135 is electrically connected to the wiring 142 via the portion 139. An opening 140 is provided, and the wiring 137 is electrically connected to the wiring 143 through the opening 140. That is, the source region 131 is electrically connected to the wiring 142 via the wiring 135. The drain region 132 is electrically connected to a wiring 143 via a wiring 137 .

[0119] The channel formation region 110 and the channel formation region 130 are provided in the same layer. In addition, the source region 111 and the drain region 112, and the source region 131 The gate electrode and the drain region 132 can be provided in the same layer. The wiring 113 and the gate electrode 133 can be provided in the same layer. The wiring 15 and the wiring 117, and the wiring 135 and the wiring 137 may be provided in the same layer. That is, the transistor 71 and the transistor 72 can be provided in the same layer. This allows the transistor 71 and the transistor 72 to be different from each other. The manufacturing process of the display device 10 can be simplified compared to the case where the display device 10 is provided on a layer. It can be a low-cost product.

[0120] A wiring 12 electrically connected to a transistor 71 constituting the gate driver circuit 21 The source driver circuit 22 is provided in the same layer as the wiring 123. The wirings 141 to 143 electrically connected to the transistor 72 are The wirings 121 to 123 are provided in the same layer. The wiring 143 is provided in a different layer. The above constitutes the gate driver circuit 21. A transistor 71 is an element constituting the source driver circuit 22. Therefore, the gate driver 72 can be prevented from being electrically shorted. Even if the source driver circuit 21 and the source driver circuit 22 are not clearly separated and have overlapping areas, Malfunctions of the gate driver circuit 21 and the source driver circuit 22 can be suppressed. This makes it possible to improve the reliability of the display device 10.

[0121] In this specification, the term "the same layer as A" refers to, for example, the same layer formed in the same process as A. By "layer" is meant a layer having one material.

[0122] In FIG. 13, wirings 141 to 143 are provided above wirings 121 to 123. The wiring 121 to the wiring 123 are arranged in a lower layer than the wiring 141 to the wiring 143. may be provided.

[0123] In addition, in FIG. 13, the wirings 121 to 123 extend in the horizontal direction, and the wirings 141 to 143 extend in the Although 43 shows a configuration in which the film extends in the vertical direction, one embodiment of the present invention is not limited to this. For example, the wirings 121 to 123 are extended vertically, and the wirings 141 to 143 are extended horizontally. Alternatively, the wirings 121 to 123 and the wirings 141 to Both of the wirings 143 may extend horizontally or vertically.

[0124] The dummy transistor 73 includes a semiconductor 151 and a conductor 152. The semiconductor 151 has an overlapping region with the transistor 71. The conductor 152 can be formed in the same layer as the channel forming region of the conductor 72. The gate electrodes of the transistors 71 and 72 may be formed in the same layer. The dummy transistor 73 does not have either the semiconductor 151 or the conductor 152. This may also be configured.

[0125] The semiconductor 151 and the conductor 152 are not electrically connected to other wirings or the like. A constant potential may be applied to the semiconductor 151 and / or the conductor 152. For example, A ground potential may be supplied.

[0126] <Configuration example of pixel 34> 14A to 14E illustrate the colors exhibited by the pixels 34 provided in the display device 10. As shown in FIG. 14(A), a pixel 34 exhibits red (R) and a pixel 35 exhibits green (G). A pixel 34 exhibiting blue (B) and a pixel 34 exhibiting blue (C) are provided in the display device of one embodiment of the present invention. Alternatively, as shown in FIG. 14B, a pixel 34 exhibiting cyan (C) and a pixel 35 exhibiting magenta (M) can be used. The display device 10 is provided with a pixel 34 that exhibits a black (M) color and a pixel 34 that exhibits a yellow (Y) color. It may be possible.

[0127] Alternatively, as shown in FIG. 14C, a pixel 34 exhibiting red (R) and a pixel 35 exhibiting green (G) are The pixel 34 exhibiting blue (B), and the pixel 34 exhibiting white (W) are included in the display device 10. Alternatively, as shown in FIG. 14(D), a pixel 3 that exhibits red (R) may be provided. 4, a pixel 34 exhibiting green (G), a pixel 34 exhibiting blue (B), and a pixel 34 exhibiting yellow (Y). Alternatively, as shown in FIG. 14(E), A pixel 34 exhibiting cyan (C), a pixel 34 exhibiting magenta (M), and a pixel 34 exhibiting yellow (Y). The display device 10 may be provided with a pixel 34 and a pixel 34 that exhibits white (W).

[0128] As shown in FIGS. 14C and 14E, a pixel 34 that exhibits white color is provided in the display device 10. In this way, the brightness of the displayed image can be increased. Also, as shown in FIG. 14(D), By increasing the number of colors that the pixel 34 can display, the reproducibility of intermediate colors can be improved. The display quality can be improved.

[0129] 15(A) and (B) are circuit diagrams showing an example of the configuration of the pixel 34. The pixel 34 includes a liquid crystal element 570, a transistor 550, and a capacitor element 560. In addition to the wiring 31 and the wiring 32, wiring 35 and the like are electrically connected to the pixel 34. do.

[0130] The potential of one electrode of the liquid crystal element 570 is appropriately set according to the specifications of the pixel 34. The orientation state of the electrode 570 is set by an image signal written to the pixel 34. A common potential (common potential) is applied to one electrode of the liquid crystal element 570 of each pixel 34. Alternatively, a different potential may be applied to one electrode of the liquid crystal element 570 of the pixel 34 in each row. may be supplied.

[0131] The pixel 34 shown in FIG. 15B includes a transistor 552 and a transistor 55 4, a capacitor 562, and a light-emitting element 572. The light-emitting element 572 is, for example, For example, an EL element that utilizes electroluminescence can be used. A layer containing a light-emitting compound (hereinafter, also referred to as an EL layer) is provided between a pair of electrodes. When a potential difference larger than the threshold voltage of the EL element is generated between the electrodes, the EL layer Holes are injected from the positive electrode side, and electrons are injected from the negative electrode side. The injected electrons and holes are The electrons recombine with each other, and the light-emitting material contained in the EL layer emits light.

[0132] EL elements are also classified according to whether the luminescent material is an organic compound or an inorganic compound. In general, the former is called an organic EL element, and the latter is called an inorganic EL element.

[0133] When a voltage is applied to an organic EL element, electrons are emitted from one electrode and holes are emitted from the other electrode. are injected into the EL layer. Then, the carriers (electrons and holes) recombine. This causes the light-emitting organic compound to form an excited state, and when this excited state returns to the ground state, Due to this mechanism, such a light-emitting element is called a current-excitation type light-emitting element. It is called.

[0134] In addition to the light-emitting compound, the EL layer may be formed by using a material having a high hole-injecting property and a material having a high hole-transporting property. , hole blocking material, material with high electron transporting properties, material with high electron injecting properties, or bipolar material (a substance having high electron-transporting and hole-transporting properties), or the like.

[0135] The EL layer can be produced by deposition (including vacuum deposition), transfer, printing, inkjet, coating, etc. The method can be formed as follows.

[0136] Inorganic EL elements are divided into dispersion-type inorganic EL elements and thin-film-type inorganic EL elements according to their element structure. Dispersion-type inorganic EL elements have a light-emitting layer in which particles of a light-emitting material are dispersed in a binder. The emission mechanism is a donor-acceptor reaction that utilizes the donor and acceptor levels. Thin-film inorganic EL elements are made by sandwiching a light-emitting layer between dielectric layers. The structure is sandwiched between electrodes, and the light emission mechanism utilizes the inner shell electron transition of metal ions. This is a localized emission method that uses

[0137] In order to extract light emitted from the light-emitting element, at least one of the pair of electrodes must be transparent. A transistor and a light emitting element are formed on the substrate, and light is emitted from the opposite side of the substrate. The top emission structure emits light from the top surface of the substrate. Tom Emission structure and dual emission structure that emits light from both sides ) structure, and any light emitting element having any emission structure can be applied.

[0138] For light-emitting elements other than the light-emitting element 572, elements similar to the light-emitting element 572 are used. It is possible.

[0139] One of the source and the drain of the transistor 552 is electrically connected to the wiring 32. The other of the source and the drain of the transistor 552 is connected to one electrode of a capacitor 562, and the gate of the transistor 554. The gate of the transistor 552 is electrically connected to the wiring 31. The source or the drain of the transistor 554 is electrically connected to the wiring 35 The other of the source and the drain of the transistor 554 is electrically connected to The other electrode of the light-emitting element 572 is electrically connected to the wiring The wiring 35a is electrically connected to the line 35b. The potential VSS is supplied to the wiring 35a. A potential VDD is supplied to

[0140] In the pixel 34 having the configuration shown in FIG. 15B, the potential supplied to the gate of the transistor 554 In response to this, the current flowing through the light emitting element 572 is controlled, and the light emitting element 572 The light emission brightness is controlled.

[0141] FIG. 15C shows a pixel 34 having a different structure from that shown in FIG. 15B. In the pixel 34 having the configuration shown in FIG. 1, one of the source and drain of the transistor 552 is connected to a wiring The other of the source and the drain of the transistor 552 is electrically connected to a capacitor One electrode of the capacitor 562 and the gate of the transistor 554 are electrically connected to The gate of the transistor 552 is electrically connected to the wiring 31. One of the source and drain of the transistor 54 is electrically connected to the wiring 35a. The other of the source and drain of the capacitor 554 is connected to the other electrode of the capacitor 562 and the light-emitting element 5 The other electrode of the light-emitting element 572 is electrically connected to the wiring 35. The wiring 35a is electrically connected to a potential VDD, and the wiring 35b is electrically connected to a potential The VSS is supplied to the

[0142] FIG. 16A shows a configuration example of a pixel 34, which has a memory, unlike the configurations shown in FIGS. The pixel 34 having the configuration shown in FIG. 16(A) is different from the pixel 34 having the configuration shown in FIG. The pixel includes a pixel 511, a transistor 513, a capacitor 515, and a circuit 401. In 34, wiring 31_1 and wiring 31_2 are provided as wiring 31 having a function as a scanning line. The wiring 32 is electrically connected to the wiring 32_1 and the wiring 32_2. 32_2 are electrically connected.

[0143] One of the source and the drain of the transistor 511 is electrically connected to the wiring 32_1. The other of the source and the drain of the transistor 511 is connected to one electrode of the capacitor 515. The gate of the transistor 511 is electrically connected to the wiring 31_1. One of the source and the drain of the transistor 513 is electrically connected to the wiring 32_2. The other of the source and the drain of the transistor 513 is connected to the capacitor 51 The other electrode of the transistor 513 is electrically connected to the circuit 401. The terminal is electrically connected to the wiring 31_2.

[0144] The circuit 401 is a circuit including at least one display element. Representative examples include light-emitting elements such as organic light-emitting elements and LED elements, and liquid crystal elements. , or MEMS (Micro Electro Mechanical Systems ) elements, etc. can be applied.

[0145] In this specification, the voltage supplied to a display element such as a light emitting element or a liquid crystal element is the voltage applied to the display element. a potential applied to one electrode of the display element and a potential applied to the other electrode of the display element; Shows the difference.

[0146] The node connecting the transistor 511 and the capacitance element 515 is designated as N1, and the transistor 513 is designated as The node connecting to the circuit 401 is designated as N2.

[0147] In the pixel 34, the transistor 511 is turned off to maintain the potential of the node N1. In addition, by turning off the transistor 513, the potential of the node N2 can be Furthermore, the transistor 513 is turned off, and the transistor 5 By writing a predetermined potential to the node N1 via the capacitor 515, In this case, the potential of the node N2 can be changed according to the change in the potential of the node N1. .

[0148] Here, the transistor 511 and the transistor 513 each have a metal oxide A transistor having an OS transistor can be used. The metal oxide can have a band gap of 2 eV or more, or 2.5 eV or more. Therefore, the OS transistor has an extremely small leakage current (off-state current) when it is off. Therefore, OS transistors are used as the transistors 511 and 513. By using this, the potentials of the nodes N1 and N2 can be maintained for a long period of time. Cut.

[0149] Metal oxides include In-M-Zn oxides (where the element M is aluminum, gallium, or zinc). Lithium, Tin, Copper, Vanadium, Beryllium, Boron, Titanium, Iron, Nickel, Germanium Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium, Tantalum , tungsten, magnesium, etc.) In particular, the element M is aluminum, gallium, yttrium, or tin. In addition, the metal oxides include indium oxide, zinc oxide, In-Ga oxide, and I n-Zn oxide, Ga-Zn oxide, or gallium oxide may also be used.

[0150] [An example of how the pixel 34 operates] Next, an example of an operation method of the pixel 34 having the configuration shown in FIG. 16(A) will be described with reference to FIG. 16(B). 16B shows the timing of the operation of the pixel 34 having the configuration shown in FIG. In order to simplify the explanation, various resistances such as wiring resistance, transformer resistance, etc. are not shown. The effects of parasitic capacitance of resistors and wiring, threshold voltage of transistors, etc. are not taken into consideration.

[0151] In the operation shown in FIG. 16B, one frame period is divided into a period T1 and a period T2. Period T1 is a period during which a potential is written to node N2, and period T2 is a period during which a potential is written to node N1. Between.

[0152] In the period T1, a voltage for turning on a transistor is applied to both the wiring 31_1 and the wiring 31_2. A fixed potential V ref Supply and wiring 32 _2 has a potential of V w supplies.

[0153] The node N1 is supplied with a potential V ref is supplied The node N2 is supplied with a potential V w Provided Therefore, the capacitance element 515 has a potential difference V w -V ref The state is maintained. do.

[0154] Next, in a period T2, a potential that turns on the transistor 511 is supplied to the wiring 31_1. A potential that turns off the transistor 513 is supplied to the wiring 31_2. 32_1 has a potential of V data is supplied to the wiring 32_1, and a predetermined constant potential is supplied to the wiring 32_2. The potential of the wiring 32_2 may be floating.

[0155] The node N1 is supplied with a potential V data is supplied. At this time, The potential V data The potential of the node N2 changes according to That is, the potential V w The potential obtained by adding the potential dV is input. In FIG. 16B, dV is shown as a positive value, but it can be a negative value. That is, the potential V data is the potential V ref It may be lower.

[0156] Here, the potential dV is roughly determined by the capacitance value of the capacitor 515 and the capacitance value of the circuit 401. When the capacitance of the capacitor 515 is sufficiently larger than the capacitance of the circuit 401, the potential d V is the potential difference V data -V ref The potential becomes close to

[0157] In this way, the pixel 34 is a circuit 401 including a display element that combines two types of data signals. Therefore, the image displayed on the display unit 33 can be generated by the pixel 34. Here, one of the two types of data signals is the image signal mentioned above. The other of the two data signals may be, for example, a correction signal. For example, the potential V corresponding to the correction signal during the period T1 w After supplying the signal to node N2, the image Potential V corresponding to the image signal data is supplied to the node N1, and displayed on the display unit 33. The image to be displayed can be an image signal corrected by a correction signal. In addition to the signal, the correction signal and the like are also generated by the source driver circuit 22 of the display device 10. It is possible.

[0158] In addition, the pixel 34 generates a potential that exceeds the maximum potential that can be supplied to the wirings 32_1 and 32_2. For example, when a light-emitting element is used, a high dynamic range ( In addition, when liquid crystal elements are used, overdriving is possible. It is possible to perform drive, etc.

[0159] [Example of configuration of circuit 401] 16C and 16D show examples of the configuration of the pixel 34 including a specific example of the circuit 401. The circuit 401 provided in the pixel 34 having the configuration shown in FIG. 9 and a capacitor 517.

[0160] One electrode of the liquid crystal element 519 is electrically connected to the node N2. The other electrode of the capacitor 517 is electrically connected to a wiring 533. The other electrode of the capacitor 517 is electrically connected to the wiring 531. The wiring 531 and the wiring 533 are, for example, For example, the wiring 531 and the wiring 532 can be a common wiring for all the pixels 34. The potential supplied to the wiring 533 is a common potential.

[0161] The capacitor 517 functions as a storage capacitor. Note that the capacitor 517 may be omitted. stomach.

[0162] The pixel 34 having the configuration shown in FIG. 16C is a potential higher than the potential that the source driver circuit 22 and the like can generate. The potential of the source driver can be supplied to one electrode of the liquid crystal element 519. A high voltage can be supplied to the liquid crystal element 519 without the need for a high-voltage resistant buffer circuit 22. The display device 10 can be made inexpensive. Alternatively, the power consumption of the display device 10 can be reduced. While suppressing the driving voltage, for example, high-speed display can be achieved by overdrive driving. In addition, a liquid crystal material having a high optical property can be applied to the wiring 32_1 or the wiring 32_2. By supplying a signal, the image signal is corrected according to the operating temperature and the deterioration state of the liquid crystal element 519. It is possible.

[0163] The circuit 401 provided in the pixel 34 having the configuration shown in FIG. 16D includes a light-emitting element 523 and a transistor. The transistor 521 and the capacitor 517 are included.

[0164] One of the source and the drain of the transistor 521 is electrically connected to the wiring 537. The other of the source and the drain of the transistor 521 is connected to one electrode of the light-emitting element 523. The gate of the transistor 521 is electrically connected to the node N2. One electrode of the capacitor 517 is electrically connected to the node N2. The other electrode of the element 517 is electrically connected to a wiring 535. One electrode is electrically connected to a wiring 539 .

[0165] The wiring 535 is a common wiring for, for example, all the pixels 34 provided in the display device 10. In this case, the potential supplied to the wiring 535 is a common potential. A constant potential can be applied to the line 537 and the wiring 539. For example, A high potential can be supplied to the wiring 539, and a low potential can be supplied to the wiring 539.

[0166] The transistor 521 has a function of controlling a current supplied to the light-emitting element 523. The capacitor 517 functions as a storage capacitor. The capacitor 517 may be omitted.

[0167] In FIG. 16D, the anode side of the light emitting element 523 is electrically connected to the transistor 521. However, the transistor 521 may be electrically connected to the cathode side. In this case, the potential value of the wiring 537 and the potential value of the wiring 539 can be changed as appropriate. Cut.

[0168] The pixel 34 having the configuration shown in FIG. 16D is a potential higher than the potential that the source driver circuit 22 and the like can generate. The potential can be supplied to one electrode of the light emitting element 523. A high potential can be supplied to the gate of the transistor 521 without the need for a high-voltage resistant buffer circuit 22. Therefore, the display device 10 can be manufactured at a low cost. By supplying a high potential to the gate, a large current can be passed through the light-emitting element 523. Therefore, the pixel 34 having the configuration shown in FIG. 16(D) can realize, for example, HDR display. In addition, a correction signal is supplied to the wiring 32_1 or the wiring 32_2, so that the transistor 52 It is also possible to correct the variation in electrical characteristics of the light emitting element 523 and the light emitting element 524.

[0169] In addition, a high potential is supplied to the gate of the transistor 521, so that a high potential is applied to the light-emitting element 523. Specifically, for example, the potential of the wiring 537 can be increased. Therefore, when the light emitting element 523 is an organic EL element, the light emitting element is arranged in a tandem arrangement as described later. This structure can improve the current efficiency and external quantum efficiency of the light emitting element 523. Therefore, a high-luminance image can be displayed on the display device 10. This allows the power consumption of the display device 10 to be reduced.

[0170] In addition, the present invention is not limited to the circuits illustrated in FIGS. 16C and 16D, and may include additional transistors, capacitors, etc. For example, the transistor may be added to the configuration shown in FIG. By adding one resistor and one capacitor, the number of nodes that can hold a potential is increased to three. In other words, the node that can hold a potential can be In addition to the node N1 and the node N2, one more node may be provided in the pixel 34. This allows the potential of the node N2 to be further increased. In the case of the configuration shown in FIG. 16(C), a higher voltage can be supplied to the liquid crystal element 519. In addition, when the pixel 34 has the configuration shown in FIG. It is possible to pass a large current.

[0171] 17A to 17D show the circuit 40 in the case where a light-emitting element 523 is used as a display element. 17A is a diagram showing an example of the configuration of the circuit 401 shown in FIG. In the same manner as the circuit 401 having the above-mentioned configuration, a capacitor 517, a transistor 521, and a light-emitting element 52 3 and,

[0172] In the circuit 401 having the configuration shown in FIG. 17A, a transistor 521 is connected to a node N2. The gate and one electrode of the capacitor 517 are electrically connected to each other. One of the source and the drain of the transistor 1 is electrically connected to a wiring 537. The other of the source and drain of the capacitor 521 is electrically connected to the other electrode of the capacitor element 517. The other electrode of the capacitor 517 is electrically connected to one electrode of the light-emitting element 523. The other electrode of the light-emitting element 523 is electrically connected to a wiring 539.

[0173] The circuit 401 having the configuration shown in FIG. 17B has the same configuration as the circuit 401 having the configuration shown in FIG. The pixel includes a capacitor 517 , a transistor 521 , and a light-emitting element 523 .

[0174] In the circuit 401 having the configuration shown in FIG. 17B, a transistor 521 is connected to a node N2. The gate and one electrode of the capacitor 517 are electrically connected to each other. One electrode of the light-emitting element 523 is electrically connected to a wiring 537. The transistor 521 is electrically connected to one of the source and drain of the transistor 521. The other of the source and drain of the capacitor 521 is electrically connected to the other electrode of the capacitor element 517. The other electrode of the capacitor 517 is electrically connected to a wiring 539.

[0175] FIG. 17C shows a case where a transistor 525 is added to the circuit 401 shown in FIG. 5 shows an example of a configuration of a circuit 401 in which one of the source and drain of a transistor 525 is the other of the source and drain of the transistor 521 and the other electrode of the capacitor 517 The other of the source and the drain of the transistor 525 is electrically connected to The gate of the transistor 525 is electrically connected to one electrode of the transistor 523. The wiring 541 is electrically connected to the transistor 525. It functions as a scanning line.

[0176] In the pixel 34 having the circuit 401 shown in FIG. 17C, the potential of the node N2 is Even if the voltage exceeds the threshold voltage of the transistor 521, the transistor 525 must be turned on. Therefore, no current flows through the light emitting element 523. This makes it possible to prevent malfunction of the display device 10. can.

[0177] FIG. 17D shows a case where a transistor 527 is added to the circuit 401 shown in FIG. 5 shows an example of a configuration of the circuit 401. is electrically connected to the other of the source and the drain of the transistor 521. The other of the source and the drain of the transistor 527 is electrically connected to the wiring 543. The gate of the transistor 527 is electrically connected to the wiring 545. It has a function as a scanning line that controls the conduction of the transistor 527 .

[0178] The wiring 543 can be electrically connected to a source of a specific potential, such as a reference potential. Supplying a specific potential to the other of the source or drain of the transistor 521 from 543 This makes it possible to stabilize the writing of image signals to the pixels 34.

[0179] The wiring 543 can be electrically connected to the circuit 520. a source of a constant potential, a function for acquiring the electrical characteristics of the transistor 521, and a function for generating a correction signal; The present invention may have one or more of the following functions:

[0180] <Display device configuration example 2> FIG. 18 shows a display device in which the pixel 34 has the configuration shown in FIGS. 16(A), (C), and (D). 18 is a block diagram showing an example of the configuration of the display device 10 shown in FIG. In addition to the components of the display device 10, a demultiplexer circuit 24 is provided. The lexer circuit can be provided, for example, in layer 20, as shown in FIG. The number of the multiplexer circuits 24 is set to be the same as the number of columns of the pixels 34 provided in the display unit 33, for example. It is possible.

[0181] The gate driver circuit 21 is electrically connected to the pixels 34 via wiring 31_1. The gate driver circuit 21 is electrically connected to the pixels 34 via wirings 31_2. The wiring 31_1 and the wiring 31_2 function as scanning lines.

[0182] The source driver circuit 22 is electrically connected to an input terminal of the demultiplexer circuit 24. The first output terminal of the demultiplexer circuit 24 is connected to the pixel 34 via the wiring 32_1. The second output terminal of the demultiplexer circuit 24 is electrically connected to the wiring 32_2. The wiring 32_1 and the wiring 32_2 are electrically connected to the pixel 34 via the data It has the function of a line.

[0183] The source driver circuit 22 and the demultiplexer circuit 24 are collectively referred to as a source driver. In other words, the demultiplexer circuit 24 is a source driver circuit 2 It may be included in 2.

[0184] In the display device 10 having the configuration shown in FIG. 18, a source driver circuit 22 receives an image signal S1 and The demultiplexer circuit 24 has a function of generating the image signal S1 and the image signal S2. 32_1 to the pixel 34 via the wiring 32_2. 2 to the pixel 34. Here, the display device 10 having the configuration shown in FIG. If it is operated in the manner shown in 6(B), the potential Vdata The voltage corresponding to the image signal S1 is The potential V w can be set as a potential corresponding to the image signal S2.

[0185] As shown in FIG. 16B, a potential V w After supplying the potential V d ata By supplying w +dV”. Here, as mentioned above As shown above, the potential dV is the potential V data Therefore, the image signal S2 has a potential corresponding to In other words, the image signal S1 can be superimposed on the image signal S2. It is possible.

[0186] Potential V corresponding to image signal S1 data , and the potential V corresponding to the image signal S2 w Size is limited according to the withstand voltage of the source driver circuit 22. By overlapping the signals S2, the source driver circuit 22 can output a higher potential than the An image corresponding to the image signal of the potential can be displayed on the display unit 33. In particular, the pixels 34 function as display elements and emit light. In the case where the element 523 is provided, a large current can be passed through the light emitting element 523, so that a high brightness image can be obtained. The image can be displayed on the display unit 33. It is possible to expand the dynamic range, which is the range of brightness.

[0187] The image corresponding to the image signal S1 and the image corresponding to the image signal S2 may be the same or different. An image corresponding to the image signal S1 and an image corresponding to the image signal S2 may be If they are the same, the display unit 33 displays the luminance of the image corresponding to the image signal S1 and the luminance of the image corresponding to the image signal S It is possible to display an image with a higher brightness than that of the image corresponding to 2.

[0188] FIG. 19 shows an example in which an image P1 corresponding to an image signal S1 is an image containing only text, and an image signal S2 In this example, the image P2 corresponding to the image 1 is an image including pictures and characters. By superimposing image P1 and image P2, the brightness of the characters can be increased. For example, As shown in FIG. 16B, the node N2 is supplied with a potential V w Written by After the potential of the node N2 is V data Since it changes depending on the image signal The potential V corresponding to S2 w When rewriting, the potential V of the image signal S1 data Rewrite On the other hand, the potential V data When rewriting, use the formula shown in Figure 16(B). The charge written to the node N2 at time T1 leaks from the transistor 513 etc. As long as the potential V w Therefore, in the case shown in Figure 19, At this point, the potential V data You can adjust the brightness of the characters by adjusting the value of do.

[0189] As described above, the potential V corresponding to the image signal S2 w When rewriting the image signal The potential V corresponding to S1 data On the other hand, the potential V data If you rewrite it, the potential V w Therefore, image P2 does not need to be rewritten. It is preferable to use an image that is rewritten less frequently than the image P1. Image P2 is not limited to an image including pictures and characters.

[0190] <Example of cross-sectional configuration of a display device> 20 is a cross-sectional view showing a configuration example of the display device 10. The display device 10 includes a substrate 701 and The substrate 705 is attached to the substrate 701 by a seal material 712. .

[0191] As the substrate 701, a single crystal semiconductor substrate such as a single crystal silicon substrate can be used. The substrate 701 may be a semiconductor substrate other than a single crystal semiconductor substrate.

[0192] The transistor 441 and the transistor 601 are provided on a substrate 701. The transistor 441 may be a transistor provided in the circuit 40. 1 denotes a transistor provided in a gate driver circuit 21 or a source driver circuit 22 That is, the transistor 441 and the transistor The resistor 601 may be provided in the layer 20 shown in FIG.

[0193] The transistor 441 includes a conductor 443 that functions as a gate electrode and a gate insulator The insulator 445 has a function as a channel forming region, and a part of the substrate 701. The semiconductor region 447 includes a low-temperature region having a function as one of a source region and a drain region. A low resistance region having a function as the other of the resistance region 449a, the source region or the drain region The transistor 441 may be either a p-channel type or an n-channel type. That's fine too.

[0194] The transistor 441 is electrically isolated from other transistors by an element isolation layer 403. In FIG. 20, the transistor 441 and the transistor 601 are separated by the element isolation layer 403. The device isolation layer 403 is electrically isolated. Oxidation of Silicon (STI) method or Shallow Tre The insulating film can be formed by using a method such as an nch isolation method.

[0195] Here, the semiconductor region 447 of the transistor 441 shown in FIG. The side and top surfaces of the semiconductor region 447 are covered with the conductor 443 via the insulator 445. In FIG. 20, the conductor 443 covers the side surface of the semiconductor region 447. The conductor 443 may be made of a material that adjusts the work function. do.

[0196] A transistor having a convex semiconductor region such as the transistor 441 is formed by Since it uses a protruding portion, it can be called a fin transistor. Even if an insulator is provided on the upper portion and functions as a mask for forming a convex portion, In addition, although FIG. 20 shows a configuration in which a protrusion is formed by processing a part of the substrate 701, Alternatively, a semiconductor having a convex shape may be formed by processing an SOI substrate.

[0197] Note that the configuration of the transistor 441 shown in FIG. 20 is merely an example, and the present invention is not limited to this configuration. An appropriate configuration may be used depending on the circuit configuration or the operation method of the circuit. For example, transistor 4 41 may be a planar type transistor.

[0198] The transistor 601 can have a structure similar to that of the transistor 441 .

[0199] On the substrate 701, an element isolation layer 403, a transistor 441, and a transistor 60 are provided. In addition to insulator 1, insulator 405, insulator 407, insulator 409, and insulator 411 are provided. Conductors 451 in the insulators 405, 407, 409, and 411 Here, the height of the top surface of the conductor 451 and the height of the top surface of the insulator 411 are It can be done to the same extent.

[0200] An insulator 413 and an insulator 415 are provided on the conductor 451 and the insulator 411. In addition, the conductor 457 is embedded in the insulator 413 and the insulator 415. 7 can be provided in the same layer as the wirings 121 to 123 shown in FIG. Here, the height of the upper surface of the conductor 457 and the height of the upper surface of the insulator 415 can be made approximately the same.

[0201] An insulator 417 and an insulator 419 are provided on the conductor 457 and the insulator 415. In addition, the conductor 459 is embedded in the insulator 417 and the insulator 419. 9 can be provided in the same layer as the wirings 141 to 143 shown in FIG. Here, the height of the top surface of the conductor 459 and the height of the top surface of the insulator 419 can be made approximately the same.

[0202] An insulator 421 and an insulator 214 are provided on the conductor 459 and the insulator 419. A conductor 453 is embedded in the edge 421 and the insulator 214. The height of the upper surface of 53 and the height of the upper surface of the insulator 214 can be made approximately the same.

[0203] An insulator 216 is provided on the conductor 453 and on the insulator 214. The conductor 455 is buried in the insulating layer 216. The height of the faces can be made the same.

[0204] On the conductor 455 and on the insulator 216, an insulator 222, an insulator 224, an insulator 254, an insulator An edge 244, an insulator 280, an insulator 274, and an insulator 281 are provided. 2 in, insulator 224 in, insulator 254 in, insulator 244 in, insulator 280 in, insulator 27 in A conductor 305 is embedded in the insulating material 281 and the insulating material 282. The height of the surface and the height of the upper surface of the insulator 281 can be made approximately the same.

[0205] An insulator 361 is provided on the conductor 305 and on the insulator 281. The electric conductor 317 and the electric conductor 337 are embedded. , the height of the upper surface of the insulator 361 can be made to be approximately the same.

[0206] An insulator 363 is provided on the conductor 337 and on the insulator 361. The conductor 347, the conductor 353, the conductor 355, and the conductor 357 are embedded. , the height of the upper surfaces of the conductors 353, 355, and 357, and the upper surface of the insulator 363 The height can be made the same.

[0207] A connection electrode 76 is provided on the conductor 353, the conductor 355, the conductor 357, and the insulator 363. 0 is provided. In addition, an anisotropic conductor 780 is provided so as to be electrically connected to the connection electrode 760. and a flexible printed circuit (FPC) is provided so as to be electrically connected to the anisotropic conductor 780. The FPC 716 is provided with a display Various signals and the like are supplied to the display device 10 from outside the device 10.

[0208] As shown in FIG. 20, the other of the source region or drain region of the transistor 441 The functional low resistance region 449b includes the conductor 451, the conductor 457, the conductor 459, and the conductor Conductor 453, conductor 455, conductor 305, conductor 317, conductor 337, conductor 347, The conductor 353, the conductor 355, the conductor 357, the connection electrode 760, and the anisotropic conductor 780 20, the connection electrode 760 is electrically connected to the FPC 716. Conductor 353 and conductor 347 are electrically connected to each other. 55 and the conductor 357 are shown, one embodiment of the present invention is not limited to these. There may be one conductor having a function of electrically connecting the electrode 760 and the conductor 347, The number of electrodes may be two, four or more. By providing a plurality of conductors having a connecting function, the contact resistance can be reduced.

[0209] A transistor 750 is provided on the insulator 214. The transistor 750 is That is, the transistor 750 can be the transistor provided in FIG. The transistor 750 may be an OS transistor. The OS transistor has a feature of having an extremely low off-state current. This allows the retention time of image signals to be extended, reducing the frequency of refresh operations. As a result, the power consumption of the display device 10 can be reduced.

[0210] Insulator 254, insulator 244, insulator 280, insulator 274, and insulator 281 Conductor 301a and conductor 301b are embedded in the conductive layer. The conductor 301b is electrically connected to one of the source and drain of the transistor 750. The conductor is electrically connected to the other of the source and drain of the transistor 750. The height of the upper surface of the conductor 301a and the upper surface of the conductor 301b and the height of the upper surface of the insulator 281 can be approximately the same. Cut.

[0211] A conductor 311, a conductor 313, a conductor 331, a capacitance element 790, and a conductor The conductors 311 and 313 are transistors. The conductor 333 and the conductor 334 are electrically connected to the conductor 750 and function as wiring. 35 is electrically connected to the capacitance element 790. Here, the conductor 331 and the conductor 33 3, and the height of the upper surface of the conductor 335 and the height of the upper surface of the insulator 361 can be made approximately the same.

[0212] The conductor 341, the conductor 343, and the conductor 351 are embedded in the insulator 363. Thus, the height of the upper surface of the conductor 351 and the height of the upper surface of the insulator 363 can be made approximately the same.

[0213] Insulator 405, insulator 407, insulator 409, insulator 411, insulator 413, insulator 41 5, insulator 417, insulator 419, insulator 421, insulator 214, insulator 280, insulator 274, the insulator 281, the insulator 361, and the insulator 363 function as interlayer films. , and may function as a planarizing film that covers the uneven shapes underneath. For example, The top surface of the insulator 363 is polished by chemical mechanical polishing (CMP) to improve flatness. The material is flattened by a flattening process using a method such as Mechanical Polishing. It may be possible.

[0214] As shown in FIG. 20, the capacitance element 790 has a lower electrode 321 and an upper electrode 325. In addition, an insulator 323 is provided between the lower electrode 321 and the upper electrode 325. That is, the capacitance element 790 has an insulator 323 that functions as a dielectric sandwiched between a pair of electrodes. 20 shows an example in which a capacitor 790 is provided over an insulator 281. As shown, the capacitor 790 may be provided on an insulator different from the insulator 281 .

[0215] In FIG. 20, a conductor 301a, a conductor 301b, and a conductor 305 are formed in the same layer. In addition, the conductor 311, the conductor 313, the conductor 317, and the lower electrode In addition, the conductor 331, the conductor 333, and the electrode 321 are formed in the same layer. In this example, the conductor 335 and the conductor 337 are formed in the same layer. In this example, the conductive layer 341, the conductive layer 343, and the conductive layer 347 are formed in the same layer. In addition, the conductor 351, the conductor 353, the conductor 355, and the conductor 357 are formed in the same layer. In this way, by forming multiple conductors on the same layer, The manufacturing process of the device 10 can be simplified, making the display device 10 inexpensive. These may be formed in different layers and may be made of different types of materials. may have the following structure:

[0216] The display device 10 shown in FIG. 20 includes a liquid crystal element 775. The liquid crystal element 775 includes a conductor 77 2, a conductor 774, and a liquid crystal layer 776 therebetween. The conductor 774 is 5 side and functions as a common electrode. , the transistor through the conductor 341, the conductor 331, the conductor 313, and the conductor 301b. The conductor 772 is electrically connected to the other of the source and drain of the conductor 750. It is formed on the substrate 363 and functions as a pixel electrode.

[0217] The conductor 772 may be made of a material that is transparent to visible light or a material that is reflective to visible light. As the light-transmitting material, for example, an oxide material containing indium, zinc, tin, etc. is used. As the reflective material, for example, a material containing aluminum, silver, etc. may be used. stomach.

[0218] When a reflective material is used for the conductor 772, the display device 10 becomes a reflective liquid crystal display device. On the other hand, a light-transmitting material is used for the conductor 772, and a light-transmitting material is also used for the substrate 701, etc. When the display device 10 is a reflective liquid crystal display device, the display device 10 becomes a transmissive liquid crystal display device. In this case, a polarizing plate is provided on the viewing side. In this case, a pair of polarizing plates is provided so as to sandwich the liquid crystal element.

[0219] Although not shown in FIG. 20, an alignment film may be provided in contact with the liquid crystal layer 776. In addition, optical members (optical substrates) such as polarizing members, phase difference members, and anti-reflection members, and backlights Light sources such as lights and side lights can be provided as appropriate.

[0220] A structure 778 is provided between the insulator 363 and the conductor 774. The structure 778 is a pillar. It is a spacer having a shape similar to that of a semiconductor laser, and has a function of controlling the distance (cell gap) between the substrates 701 and 705. As the structure 778, a spherical spacer may be used.

[0221] On the substrate 705 side, there are a light-shielding layer 738, a colored layer 736, and an insulator 734 in contact with these layers. The light-shielding layer 738 has a function of blocking light emitted from an adjacent region. In addition, the light-shielding layer 738 has a function of blocking external light from reaching the transistor 750 and the like. The colored layer 736 is provided to have a region overlapping with the liquid crystal element 775 .

[0222] The liquid crystal layer 776 may include a thermotropic liquid crystal, a low molecular weight liquid crystal, a high molecular weight liquid crystal, or a polymer dispersed liquid crystal. (PDLC: Polymer Dispersed Liquid Crystal), Polymer Network Liquid Crystal (PNLC) Crystal, ferroelectric liquid crystal, antiferroelectric liquid crystal, etc. can be used. When the electric field method is adopted, liquid crystal exhibiting a blue phase without using an alignment film may be used.

[0223] The liquid crystal device modes are TN (Twisted Nematic) mode, V A (Vertical Alignment) mode, IPS (In-Plane-Sw fringe field switching mode, FFS (Fringe Field Switching) mode ASM (Axially Symmetric aligned Micro-c ell) mode, OCB (Optical Compensated Birefring ence mode, ECB (Electrically Controlled Bi refringence mode, guest host mode, etc. can be used.

[0224] In addition, the liquid crystal layer 776 is a dispersion liquid crystal layer using a polymer dispersion type liquid crystal or a polymer network type liquid crystal. A random type liquid crystal can also be used. In this case, a black and white display is performed without providing the colored layer 736. Alternatively, a colored layer 736 may be used to perform color display.

[0225] In addition, as a driving method of the liquid crystal device, a time-dependent additive color mixing method is used to perform color display. A split-display method (also called a field sequential driving method) may be applied. In this case, the colored layer 736 may not be provided. For example, it is necessary to provide sub-pixels that exhibit the respective colors of R (red), G (green), and B (blue). Therefore, it has the advantage of improving the aperture ratio of the pixel and increasing the definition. .

[0226] The display device 10 having the configuration shown in FIG. 20 uses liquid crystal elements as display elements. An embodiment is not limited to this. The display device differs from the display device 10 shown in FIG. 20 in that light-emitting elements are used as elements.

[0227] The display device 10 shown in FIG. 21 has a light-emitting element 782. The light-emitting element 782 is 2, an EL layer 786, and a conductor 788. The EL layer 786 is made of an organic compound or a quantum dot. It has inorganic compounds such as dots.

[0228] Examples of materials that can be used for the organic compound include fluorescent materials and phosphorescent materials. In addition, materials that can be used for quantum dots include colloidal quantum dot materials, Examples include alloy-type quantum dot materials, core-shell-type quantum dot materials, and core-type quantum dot materials. can be done.

[0229] In the display device 10 shown in FIG. 21, an insulator 730 is provided on an insulator 363. Here, The insulator 730 can be configured to cover part of the conductor 772. The light-transmitting conductor 788 is a light-emitting element 82 that can be a top-emission type light-emitting element. The light emitting element 782 has a bottom emission structure that emits light to the conductor 772 side. Alternatively, a dual emission structure may be used in which light is emitted to both the conductor 772 and the conductor 788. This is also fine.

[0230] The light emitting element 782 can have a microcavity structure, which will be described in more detail below. This makes it possible to extract light of a specific color (for example, RGB) without providing a colored layer. In this case, the display device 10 can display in color. This makes it possible to suppress the absorption of light by the colored layer. This allows a larger image to be displayed, and also reduces the power consumption of the display device 10. The EL layer 786 is formed in an island shape for each pixel or in a stripe shape for each pixel row, that is, in a color-coded manner. Even when the colored layer is formed, the colored layer may not be provided.

[0231] The light-shielding layer 738 is provided so as to have a region overlapping with the insulator 730. The light-shielding layer 738 is covered with an insulator 734. The gap is filled with a sealing layer 732 .

[0232] Furthermore, the structure 778 is provided between the insulator 730 and the EL layer 786. The body 778 is disposed between the insulator 730 and the insulator 734 .

[0233] FIG. 22 shows a modification of the display device 10 shown in FIG. 21, and is different from the modification in that a colored layer 736 is provided. 21. By providing the colored layer 736, the light emitting element 782 This can improve the color purity of the light extracted from the display device 10. In addition, all the light emitting elements 782 of the display device 10 can be turned to white. Since the EL layer 786 can be formed as a light-emitting element that emits colored light, the EL layer 786 does not need to be formed by coloring. This allows the display device 10 to have high definition.

[0234] In FIG. 20 to FIG. 22, the transistor 441 and the transistor 601 are disposed in the substrate 701. The transistor 441 and the transistor 6 are provided so that a channel formation region is formed in the region. In the above embodiment, an OS transistor is stacked on the first insulating film 101. 23 shows a modified example of FIG. 20, FIG. 24 shows a modified example of FIG. 21, and FIG. 25 shows a modified example of FIG. 22. For example, the transistors 441 and 601 are not transistors 441 and 602, but OS transistors. A transistor 750 is provided on the transistors 602 and 603. 20 to 22. That is, the display device 10 shown in FIG. In the display device 10 having the configuration shown in any one of FIGS. 21 to 25, OS transistors are stacked.

[0235] An insulator 613 and an insulator 614 are provided on the substrate 701, and a transistor is provided on the insulator 614. A resistor 602 and a transistor 603 are provided. For example, a transistor or the like may be provided between the substrate 701 and the insulator 61. 20 to 22. A transistor having a similar configuration may be provided.

[0236] The transistor 602 may be a transistor provided in the circuit 40. The transistor 603 is a transistor provided in the gate driver circuit 21, or a source driver The transistors 602 and 603 can be transistors provided in the circuit 22. The transistor 603 can be provided in the layer 20 shown in FIG. Thus, if circuit 40 is provided on layer 30, transistor 602 is provided on layer 30. It can be done.

[0237] The transistor 602 and the transistor 603 are transistors having the same configuration as the transistor 750. The transistor 602 and the transistor 603 can be a transistor. An OS transistor having a different structure from the transistor 750 may be used.

[0238] In addition to the transistor 602 and the transistor 603, an insulator 616, Insulator 622, insulator 624, insulator 654, insulator 644, insulator 680, insulator 67 4, and an insulator 681 are provided. The conductor 461 is embedded in the insulator 674 and the insulator 681. The height of the upper surface of the body 461 and the height of the upper surface of the insulator 681 can be approximately the same.

[0239] An insulator 501 is provided on the conductor 461 and on the insulator 681. The conductor 463 is buried in the insulating layer 501. The height of the faces can be made the same.

[0240] An insulator 503 is provided on the conductor 463 and on the insulator 501. The conductor 465 is buried in the insulating layer 503. The height of the faces can be made the same.

[0241] An insulator 505 is provided over the conductor 465 and the insulator 503. A conductor 467 is embedded in the wiring 121 shown in FIG. The conductor 467 can be provided in the same layer as the wiring 123. The height of the upper surface of the insulator 505 can be made to be approximately the same.

[0242] An insulator 507 is provided on the conductor 467 and on the insulator 505. The conductor 469 is buried in the insulating layer 507. The height of the faces can be made the same.

[0243] An insulator 509 is provided over the conductor 469 and the insulator 507. A conductor 471 is embedded in the wiring 141 shown in FIG. The conductor 471 can be provided in the same layer as the wiring 143. The height of the upper surface of the insulator 509 can be made to be approximately the same.

[0244] An insulator 421 and an insulator 214 are provided on the conductor 471 and the insulator 509. A conductor 453 is embedded in the edge 421 and the insulator 214. The height of the upper surface of 53 and the height of the upper surface of the insulator 214 can be made approximately the same.

[0245] As shown in FIG. 23 to FIG. 25, one of the source and drain of the transistor 602 is a conductive Conductor 461, Conductor 463, Conductor 465, Conductor 467, Conductor 469, Conductor 471 , Conductor 453, Conductor 455, Conductor 305, Conductor 317, Conductor 337, Conductor 3 47, the conductor 353, the conductor 355, the conductor 357, the connection electrode 760, and the anisotropic conductor It is electrically connected to the FPC 716 via 780.

[0246] Insulator 613, insulator 614, insulator 680, insulator 674, insulator 681, insulator 50 1, the insulator 503, the insulator 505, the insulator 507, and the insulator 509 are interlayer films. The surface roughness may also function as a flattening film that covers the underlying uneven shapes. .

[0247] By configuring the display device 10 as shown in FIG. 23 to FIG. 25, the frame of the display device 10 can be narrowed. In order to reduce the size of the display device 10, all the transistors in the display device 10 are OS transistors. This allows, for example, a transistor provided in layer 20 and a transistor provided in layer 30 to be The display device 10 can be manufactured using the same device as the transistors. This allows a reduction in the manufacturing cost, and the display device 10 can be made inexpensive.

[0248] <Example of the configuration of light-emitting element> 26A to 26E are diagrams showing configuration examples of the light-emitting element 782. 7 shows a structure (single structure) in which an EL layer 786 is sandwiched between a conductor 772 and a conductor 788. As mentioned above, the EL layer 786 includes a light-emitting material, for example, an organic compound light-emitting Materials included.

[0249] FIG. 26B is a diagram showing a laminated structure of the EL layer 786. In the light-emitting element 782 having the structure, the conductor 772 functions as an anode, and the conductor 788 functions as a cathode. It functions as a pole.

[0250] The EL layer 786 is formed by stacking a hole injection layer 721, a hole transport layer 722, a light emitting layer 723, and a conductor 772 on the EL layer 786. 23, an electron transport layer 724, and an electron injection layer 725 are laminated in this order. When the conductor 772 functions as a cathode and the conductor 788 functions as an anode, The stacking order is reversed.

[0251] The light-emitting layer 723 has a light-emitting material or a combination of multiple materials, and emits a desired light color. The light-emitting layer 723 can have a structure in which fluorescent light or phosphorescent light can be emitted. A laminated structure with different light colors may be used. In this case, the light emitting layers used in the laminated light emitting layers may be different in color. The material and other materials may each be made of different materials.

[0252] In the light-emitting element 782, for example, the conductor 772 shown in FIG. The dielectric 788 is used as a semi-transmissive / semi-reflective electrode to form a micro-optical resonator (microcavity) structure. As a result, the light emitted from the light-emitting layer 723 included in the EL layer 786 is resonated between the two electrodes. This can intensify the light emitted through the conductor 788.

[0253] Note that the conductor 772 of the light-emitting element 782 is made of a conductive material having reflectivity and a conductive material having light-transmitting properties. In the case of a reflective electrode having a laminated structure with a conductive material (transparent conductive film), the thickness of the transparent conductive film is Specifically, the light emitted from the light-emitting layer 723 can be adjusted optically by controlling the light emitted from the light-emitting layer 723. The distance between the electrodes of the conductor 772 and the conductor 788 is mλ / 2 (only) for the wavelength λ of the light. It is preferable to adjust the value so that the value is close to m (where m is a natural number).

[0254] In order to amplify the desired light (wavelength: λ) obtained from the light emitting layer 723, the conductor 77 The optical distance from the conductor 788 to the region (light emitting region) where the desired light of the light emitting layer is obtained is and the optical distance from the light emitting layer 723 to a region (light emitting region) where desired light is obtained, respectively ( It is preferable to adjust it so that it is close to 2m'+1) λ / 4 (where m' is a natural number). The light-emitting region here refers to the recombination of holes and electrons in the light-emitting layer 723. Indicates the area.

[0255] By performing such optical adjustment, the spectrum of a specific monochromatic light obtained from the light-emitting layer 723 can be adjusted. This narrows the line width and allows light emission with good color purity to be obtained.

[0256] However, in the above case, the optical distance between the conductor 772 and the conductor 788 is, strictly speaking, This can be said to be the total thickness from the reflection area at However, it is difficult to precisely determine the reflection area of ​​the conductor 772 and the conductor 788. Therefore, it is sufficient to assume that any position of the conductor 772 and the conductor 788 is a reflection area. The effect of obtaining the above can be obtained. Strictly speaking, the optical distance between the reflective area of ​​the conductor 772 and the light emitting area where the desired light is obtained is determined. However, the conductor 772 is It is difficult to precisely determine the reflection area in the light emitting layer and the emission area in the light emitting layer from which the desired light can be obtained. Since it is difficult to achieve this, any position of the conductor 772 is set as a reflection region, and any position of the light-emitting layer from which desired light can be obtained is set as a reflection region. It is assumed that the above-mentioned effect can be sufficiently obtained by assuming any desired position as the light emitting region.

[0257] The light-emitting element 782 shown in FIG. 26(B) has a microcavity structure, and therefore the same EL Even if the device has layers, it is possible to extract light of different wavelengths (monochromatic light). There is no need to paint different colors (e.g., RGB) to obtain different light colors. It is easy to apply a colored layer. It can also be combined with a colored layer. Since it is possible to increase the light emission intensity in the surface direction, it is possible to reduce power consumption.

[0258] It should be noted that the light emitting element 782 shown in FIG. 26(B) does not have a microcavity structure. In this case, the light-emitting layer 723 may be structured to emit white light, and a colored layer may be provided to In addition, the EL layer 786 is formed. When doing so, if different colors are applied to obtain different luminescent colors, it is possible to obtain a desired color without providing a colored layer. You can extract light.

[0259] At least one of the conductor 772 and the conductor 788 is a light-transmitting electrode (a transparent electrode, a semi-transparent electrode, When the electrode having light transmission is a transparent electrode, the transparent electrode can be a semi-reflective electrode. The visible light transmittance of the electrode is 40% or more. The reflectance of the semi-reflective electrode for visible light is 20% or more and 80% or less, preferably 40% or more and 70% or less. The resistivity of these electrodes is 1×10 -2 Ωcm or less is preferable.

[0260] When the conductor 772 or the conductor 788 is an electrode having reflectivity (a reflecting electrode), the reflectivity The visible light reflectance of the electrode having the above structure is 40% or more and 100% or less, preferably 70% or more and 10 0% or less. The resistivity of this electrode is 1×10 -2 Ωcm or less is preferable.

[0261] The light emitting element 782 may have a structure shown in FIG. Two EL layers (EL layer 786a and EL layer 786b) are disposed between the conductor 772 and the conductor 788. and a laminated structure having a charge generating layer 792 between the EL layer 786a and the EL layer 786b. The light emitting element 782 having a tandem structure is shown. Therefore, the current efficiency and the external quantum efficiency of the light-emitting element 782 can be improved. It is possible to display a high-brightness image on the display device 10. In addition, the power consumption of the display device 10 can be reduced. Here, the EL layer 786a and the EL layer 786b can be formed in the E It can have a similar structure to the L layer 786 .

[0262] The charge generating layer 792 generates an EL Electrons are injected into one of the layer 786a and the EL layer 786b, and holes are injected into the other. Therefore, the potential of the conductor 772 becomes higher than the potential of the conductor 788. When a voltage is applied so that the charge generation layer 792 is turned on, electrons are injected into the EL layer 786a. Holes are injected from the charge generating layer 792 into the EL layer 786b.

[0263] In addition, the charge generating layer 792 transmits visible light from the viewpoint of light extraction efficiency (specifically, It is preferable that the charge generating layer 792 has a visible light transmittance of 40% or more. The electrical conductivity of the generating layer 792 is lower than the electrical conductivity of the conductor 772 or the electrical conductivity of the conductor 788. Good too.

[0264] The light emitting element 782 may have a structure shown in FIG. Between the conductor 772 and the conductor 788, three EL layers (EL layer 786a, EL layer 786b, and EL layer 786a and EL layer 786b are provided between the EL layer 786a and EL layer 786b, and between the EL layer 786c and EL layer 786b. A light-emitting element 78 having a tandem structure having a charge generating layer 792 between the EL layer 786b and the EL layer 786c. 2. Here, the EL layer 786a, the EL layer 786b, and the EL layer 786c are the same as those shown in FIG. The light-emitting element 782 may have a structure similar to that of the EL layer 786 shown in FIG. ) is used to further improve the current efficiency and external quantum efficiency of the light emitting element 782. Therefore, the display device 10 can display an image with higher brightness. In addition, the power consumption of the display device 10 can be further reduced.

[0265] The light emitting element 782 may have a configuration as shown in FIG. Between the conductor 772 and the conductor 788, n EL layers (EL layer 786(1) to EL layer 786(2)) are provided. (n)) is provided, and a charge generating layer 792 is provided between each of the EL layers 786. 7 shows a light-emitting device 782 having a structure in which EL layers 786(1) to 786(n) are The EL layer 786 shown in FIG. In the EL layer 786, the EL layer 786(1), the EL layer 786(m), and the EL layer 78 6(n), where m is an integer between 2 and n, and n is an integer equal to or greater than m. The larger the value of n, the higher the current efficiency and external quantum efficiency of the light emitting element 782 can be. Therefore, a high-luminance image can be displayed on the display device 10. The power consumption can be reduced.

[0266] <Materials for light-emitting devices> Next, constituent materials that can be used for the light emitting element 782 will be described.

[0267] <<Conductor 772 and Conductor 788>> If the conductor 772 and the conductor 788 can fulfill the functions of an anode and a cathode, the following can be used: For example, metals, alloys, and electrically conductive compounds can be used in combination. In-Sn oxide ( ITO), In-Si-Sn oxide (ITSO), In-Zn oxide, In-W-Zn oxide is one of them. Others include aluminum (Al), titanium (Ti), Chromium (Cr), Manganese (Mn), Iron (Fe), Cobalt (Co), Nickel (Ni) , Copper (Cu), Gallium (Ga), Zinc (Zn), Indium (In), Tin (Sn), Molybdenum (Mo), Tantalum (Ta), Tungsten (W), Palladium (Pd), Gold Metals such as (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd) In addition, the above-mentioned examples may be used. Elements belonging to Group 1 or 2 of the Periodic Table (e.g., lithium (Li), cesium ( Cs), calcium (Ca), strontium (Sr), europium (Eu), Terbium (Yb) and other rare earth metals and alloys containing these in appropriate combinations, as well as other graphite Fen etc. can be used.

[0268] <<Hole Injection Layer 721 and Hole Transport Layer 722>> The hole injection layer 721 is connected to the EL layer 786 from the conductor 772 which is the anode or the charge generation layer 792. This is a layer that injects holes and contains a material with high hole injection properties. EL layer 786a, EL layer 786b, EL layer 786c, and EL layers 786(1) to 786(E). It shall include L layer 786(n).

[0269] Materials with high hole injection properties include molybdenum oxide, vanadium oxide, and ruthenium oxide. Examples of transition metal oxides include oxides of tungsten, manganese, and other oxides. Phthalocyanine (abbreviation: HPc) and copper phthalocyanine (abbreviation: CuPC) The nin-series compound, 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenyl N,N'-bis{4-[bis(3-methylphenyl)amino]biphenyl (abbreviation: DPAB), phenyl)amino]phenyl}-N,N'-diphenyl-(1,1'-biphenyl)-4, Aromatic amine compounds such as 4'-diamine (abbreviation: DNTPD) or poly(3,4-ethyl PEDOT / PSS) Polymers such as the above can be used.

[0270] In addition, materials with high hole injection properties include hole transport materials and acceptor materials (electron acceptors). A composite material containing an acceptor material can also be used. In this case, the positive Electrons are extracted from the hole transport material, generating holes in the hole injection layer 721, and the hole transport layer 72 Holes are injected into the light-emitting layer 723 through the hole-injecting layer 721. The substrate may be formed of a single layer of a composite material containing a material having an electron-accepting property and an acceptor material (electron-accepting material). However, the hole transport material and the acceptor material (electron accepting material) are stacked in separate layers. It may be formed in layers.

[0271] The hole transport layer 722 is a layer that transports holes injected from the conductor 772 by the hole injection layer 721. The hole transport layer 722 is a layer that transports the electrons to the light layer 723. The hole transporting material used for the hole transport layer 722 is particularly suitable for the HOMO level of the hole injection layer 721. It is preferable to use a compound having a HOMO level that is the same as or close to the above-mentioned level.

[0272] The acceptor material used for the hole injection layer 721 is, for example, a material of Group 4 to Oxides of metals belonging to Group 8 can be used. Specifically, molybdenum oxide, Vanadium, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide Among them, molybdenum oxide is particularly stable in the atmosphere and has a low absorption rate. It is preferred because it has low moisture resistance and is easy to handle. Other examples include quinodimethane derivatives and chloranil derivatives. Organic acceptors such as hexaazatriphenylene derivatives can be used. 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane ( Abbreviation: F4-TCNQ), Chloranil, 2,3,6,7,10,11-Hexacyano-1 , 4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN) and others are used. It is possible.

[0273] The hole transport material used for the hole injection layer 721 and the hole transport layer 722 is 10 -6 cm 2A material having a hole mobility of 1 / Vs or more is preferable. Other substances may be used as long as they are suitable.

[0274] As hole transport materials, π-electron-rich heteroaromatic compounds (e.g., carbazole derivatives, Indole derivatives) and aromatic amine compounds are preferred. Specific examples include 4,4'-bis [N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB or α-NP D) N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1'-biphenyl] phenyl]-4,4'-diamine (abbreviation: TPD), 4,4'-bis[N-(spiro-9 ,9'-Bifluoren-2-yl)-N-phenylamino]biphenyl (abbreviation: BSPB ), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine ( Abbreviated name: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl) tetrahydrofuran mBPAFLP, 4-phenyl-4'-(9-phenyl-9 H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 3-[4 -(9-phenanthryl)-phenyl]-9-phenyl-9H-carbazole (abbreviation: P CPPn), N-(4-biphenyl)-N-(9,9-dimethyl-9H-fluorene-2 -yl)-9-phenyl-9H-carbazol-3-amine (abbreviation: PCBiF), N- (1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazole -3-yl)phenyl]-9,9-dimethyl-9H-fluoren-2-amine (abbreviation: P CBBiF), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazole- 3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4 '-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PC BANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazo PCBNBB, 9,9-dimethyl-N- Phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluor PCBAF, N-phenyl-N-[4-(9-phenyl- 9H-carbazol-3-yl)phenyl]spiro-9,9'-bifluorene-2-amine PCBASF, 4,4',4''-tris(carbazol-9-yl)triphenylphosphine phenylamine (abbreviation: TCTA), 4,4',4''-tris(N,N-diphenylamine) N-amino)triphenylamine (abbreviation: TDATA), 4,4',4''-tris[N-(3 -Methylphenyl)-N-phenylamino]triphenylamine (abbreviation: MTDATA) Compounds with aromatic amine skeletons such as 1,3-bis(N-carbazolyl)benzene (abbreviation mCP), 4,4'-di(N-carbazolyl)biphenyl (CBP), 3,6 -Bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP) , 3,3'-bis(9-phenyl-9H-carbazole) (abbreviation: PCCP), 3-[N -(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazol PCzPCA1, 3,6-bis[N-(9-phenylcarbazole- 3-yl)-N-phenylamino]-9-phenylcarbazole (abbreviation: PCzPCA2 ), 3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino ]-9-phenylcarbazole (abbreviation: PCzPCN1), 1,3,5-tris[4-( N-carbazolyl)phenyl]benzene (abbreviation: TCPB), 9-[4-(10-phenyl CzPA and other carbazoles. Compounds with a bazoline skeleton, 4,4',4''-(benzene-1,3,5-triyl) Tri(dibenzothiophene) (abbreviation: DBT3P-II), 2,8-diphenyl-4-[ 4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation Name: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl )phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV) Compounds with a phene skeleton, 4,4',4''-(benzene-1,3,5-triyl) Di(dibenzofuran) (abbreviation: DBF3P-II), 4-{3-[3-(9-phenyl- 9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBF FLBi-II) and other compounds having a furan skeleton.

[0275] In addition, poly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylphosphine) nylamine) (abbreviation: PVTPA), poly[N-(4-{N'-[4-(4-diphenyl Amino)phenyl]phenyl-N'-phenylamino}phenyl)methacrylamide]( abbreviation: PTPDMA), poly[N,N'-bis(4-butylphenyl)-N,N'-bis Polymer compounds such as Poly(phenyl)benzidine (abbreviation: Poly-TPD) can also be used. can.

[0276] However, the hole transport material is not limited to the above, and may be one or a combination of various known materials. The combination of these materials can be used as a hole transporting material for the hole injection layer 721 and the hole transport layer 722. It is possible to form the hole transport layer 722 from a plurality of layers. For example, a first hole transport layer and a second hole transport layer may be laminated.

[0277] <<Light-emitting layer 723>> The light-emitting layer 723 is a layer containing a light-emitting substance. A substance that emits light of a color such as red, green, yellow-green, yellow, orange, or red is appropriately used. 26(C), (D), and (E), when the light-emitting element 782 has multiple EL layers, By using different light-emitting materials for the light-emitting layers 723 provided in the respective EL layers, (For example, white light obtained by combining luminescent colors that are complementary to each other) For example, when the light-emitting element 782 has the structure shown in FIG. In this case, the luminescent material used in the luminescent layer 723 provided in the EL layer 786a and the luminescent material used in the EL layer 786b By making the luminescent material used for the EL layer 721 different from that used for the luminescent layer 723 provided in the EL layer 722, The color of the light emitted by the EL layer 86a can be made different from the color of the light emitted by the EL layer 786b. Note that one light-emitting layer may have a laminated structure containing different light-emitting materials.

[0278] The light-emitting layer 723 contains one or more organic compounds in addition to the light-emitting substance (guest material). (host material, assist material) may be included. In addition, one or more organic compounds As the second insulating layer, one or both of a hole transporting material and an electron transporting material can be used.

[0279] When the light-emitting element 782 has the structure shown in FIG. 26(C), the EL layer 786a and the EL A light-emitting material that emits blue light (a blue light-emitting material) is used as a guest material in one of the layers 786b. On the other hand, a substance that emits green light (green luminescent substance) and a substance that emits red light (red luminescent substance) are used. This method is preferably used to emit light from a blue emitting material (blue emitting layer). This is effective when the efficiency or life span of the blue luminescent material is inferior to that of other materials. Using luminescent materials that convert the excitation energy into visible light, green and red luminescent materials are For example, if a luminescent material that converts triplet excitation energy into visible light is used, RGB can be achieved. This is preferable since it improves the spectral balance.

[0280] The light-emitting material that can be used for the light-emitting layer 723 is not particularly limited. A luminescent material that converts energy into visible light or triplet excitation energy into visible light. A luminescent material that converts the emitted light into light can be used. Some examples include the following:

[0281] Luminescent materials that convert singlet excitation energy into light include fluorescent materials. Examples of such derivatives include pyrene derivatives, anthracene derivatives, triphenylene derivatives, and fluoro derivatives. Oleno derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives , dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives In particular, pyrene derivatives are luminescent. It is preferable because it has a high quantum yield. A specific example of the pyrene derivative is N,N'-bis(3-methylpyrene). N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl) Phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N '-Diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl) Phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis (Dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation : 1,6FrAPrn), N,N'-bis(dibenzothiophen-2-yl)-N,N' -Diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyridine) Benzene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan )-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diamine) bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine]( Abbreviation: 1,6BnfAPrn-02), N,N'-(pyrene-1,6-diyl)bis[( 6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine](abbreviation: 1,6BnfAPrn-03) and the like. In addition, the pyrene derivative is one aspect of the present invention. These are a group of compounds useful for achieving blue chromaticity in

[0282] In addition, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2, 2'-Bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl- 9-Anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2B Py), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N' -Diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-cal 4'-(10-phenyl-9-anthryl)-4'-(10-phenyl-9-benzol-9-yl)triphenylamine (Abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl Phenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-di Phenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazo PCAPA, 4-(10-phenyl-9-anthryl)-4 '-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PC BAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9- Phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA) ), perylene, 2,5,8,11-tetra(tert-butyl)perylene (abbreviation: TBP ), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1- phenylene)bis[N,N',N'-triphenyl-1,4-phenylenediamine](abbreviation Name: DPABPA), N,9-diphenyl-N-[4-(9,10-diphenyl-2-phenyl] N-(2-phenyl)-9H-carbazol-3-amine (abbreviation: 2PCAPPA), -[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-tri Phenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA) etc. can be used. do.

[0283] In addition, examples of luminescent materials that convert triplet excitation energy into luminescence include phosphorescent materials. Materials that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence) tivated delayed fluorescence (TADF) materials are can be.

[0284] Phosphorescent materials include organometallic complexes, metal complexes (platinum complexes), and rare earth metal complexes. Since each substance has a different emission color (emission peak), it is necessary to select the appropriate one as needed. Select and use.

[0285] It has a blue or green color and the peak wavelength of the emission spectrum is 450 nm or more and 570 nm or less. Examples of phosphorescent materials that can be used include the following substances.

[0286] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl )-4H-1,2,4-triazol-3-yl-κN2]phenyl-κC}iridium (III) (abbreviation: [Ir(mpptz-dmp)3]), tris(5-methyl-3,4 -diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir (Mptz)3]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl [Ir(iPrPrp tz-3b)3]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl [Ir(iPr5 btz)3]), organometallic complexes with 4H-triazole skeletons such as tris[3- Methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato ]Iridium(III) (abbreviation: [Ir(Mptz1-mp)3]), tris(1-methyl 1H-1,2,4-triazolato)iridium(II I) (abbreviation: [Ir(Prptz1-Me)3]) Organometallic complexes, fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl] [Ir(iPrpmi)3 ]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f] [Ir(dmpimpt-Me)3 Organometallic complexes with imidazole skeletons such as bis[2-(4',6'-difluorophenyl] (O-phenyl)pyridinato-N,C 2’ ]Iridium(III) tetrakis(1-pyrazo aryl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pi Lysinato-N,C 2’ ]Iridium(III) picolinate (abbreviation: FIrpic), S[2-(3,5-bistrifluoromethylphenyl)pyridinato-N,C 2’ ]Iridescent Ir(III) picolinate (abbreviation: [Ir(CF3ppy)2(pic)]), bis[ 2-(4',6'-difluorophenyl)pyridinato-N,C 2’ ]Iridium (III ) acetylacetonate (abbreviation: FIr(acac)) Examples of the organic complex include an organometallic complex having a diphenylpyridine derivative as a ligand.

[0287] It has a green or yellow color and the peak wavelength of the emission spectrum is 495 nm or more and 590 nm or less. Examples of phosphorescent materials that can be used include the following substances.

[0288] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation [Ir(mppm)3]), tris(4-t-butyl-6-phenylpyrimidinato)i Lithium(III) (abbreviation: [Ir(tBuppm)3]), (acetylacetonato)bi Bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(m ppm)2(acac)]), (acetylacetonato)bis(6-tert-butyl-4 -phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm)2(a cac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenyl [Pyrimidinato]iridium(III) (abbreviation: [Ir(nbppm)2(acac)]) , (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenyl Rupyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm)2(acac) ]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethyl phenyl)-4-pyrimidinyl-κN3]phenyl-κC}iridium(III) (abbreviation :[Ir(dmppm-dmp)2(acac)]), (acetylacetonato)bis(4 ,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm)2( Organometallic iridium complexes with pyrimidine skeletons such as (acetylated acac)] cetonato)bis(3,5-dimethyl-2-phenylpyrazinate)iridium(III)( Abbreviation: [Ir(mppr-Me)2(acac)]), (acetylacetonato)bis(5 -isopropyl-3-methyl-2-phenylpyrazinate)iridium(III)(abbreviation: Organometallic compounds with pyrazine skeletons such as [Ir(mppr-iPr)2(acac)] Iridium complex, tris(2-phenylpyridinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(ppy)3]), bis(2-phenylpyridinato-N,C2’ ) Iridi Ir(III) acetylacetonate (abbreviation: [Ir(ppy)2(acac)]), (benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [I r(bzq)2(acac)]), tris(benzo[h]quinolinato)iridium(II I) (abbreviation: [Ir(bzq)3]), tris(2-phenylquinolinato-N,C 2’ ) Iridium(III) (abbreviation: [Ir(pq)3]), bis(2-phenylquinolinato- N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(pq)2(a Organometallic iridium complexes with pyridine skeletons such as bis(2,4-diphenyl ether (cac)]) Phenyl-1,3-oxazolato-N,C 2’ ) Iridium(III) acetylacetonate Ir(dpo)2(acac)]), bis{2-[4'-(perfluoro Phenyl)phenyl]pyridinato-N,C 2’}Iridium(III) acetylacetonate Ir(p-PF-ph)2(acac)], bis(2-phenylbenzo[Ir(p-PF-ph)2(acac)] Thiazolato-N,C 2’ ) Iridium(III) acetylacetonate (abbreviation: [Ir( In addition to organometallic complexes such as tris(acetylacetonato)(mono(bt)2(acac)]), Phenanthroline) terbium(III) (abbreviation: [Tb(acac)3(Phen)] ) are rare earth metal complexes.

[0289] Among the above, those having a pyridine skeleton (particularly a phenylpyridine skeleton) or a pyrimidine skeleton Organometallic iridium complexes are useful compounds for achieving green chromaticity in one embodiment of the present invention. It is a compound group.

[0290] It has a yellow or red color and the peak wavelength of the emission spectrum is 570 nm or more and 750 nm or less. Examples of phosphorescent materials that can be used include the following substances.

[0291] For example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinium] dinato]iridium(III) (abbreviation: [Ir(5mdppm)2(dibm)]), S[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)yl Ir(III) (abbreviation: [Ir(5mdppm)2(dpm)]), (dipivaloyl Thanato)bis[4,6-di(naphthalene-1-yl)pyrimidinato]iridium(III ) (abbreviation: [Ir(d1npm)2(dpm)]) Metal Complex, (acetylacetonato)bis(2,3,5-triphenylpyrazinate)iridide Ir(tppr)2(acac)], bis(2,3,5-trimethylammonium bromide) Triphenylpyrazinate)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir (tppr)2(dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethyl {5-phenyl-2-pyrazinyl-κN}phenyl-κC}(2,6-diphenyl Tyl-3,5-heptanedionate-κ 2 O,O') Iridium(III) (abbreviation: [Ir (dmdppr-P)2(dibm)]), bis{4,6-dimethyl-2-[5-(4- Cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazine {2,2,6,6-tetramethyl-3,5-heptanedioic acid} Nat-κ 2O,O') Iridium(III) (abbreviation: [Ir(dmdppr-dmCP) 2(dpm)]), (acetylacetonato)bis[2-methyl-3-phenylquinoxalyl Nat-N,C 2’ ]Iridium(III) (abbreviation: [Ir(mpq)2(acac)]) , (acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C 2’ ) Ili Ir(dpq)2(acac) (acetylacetonate) ) Bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq)2(acac)]) Complexes and tris(1-phenylisoquinolinato-N,C 2’ ) Iridium (III) (abbreviation Name: [Ir(piq)3]), Bis(1-phenylisoquinolinato-N,C 2’ ) Iridi Ir(III) acetylacetonate (abbreviation: [Ir(piq)2(acac)]) Organometallic complexes with pyridine skeletons such as 2,3,7,8,12,13,17,18- octaethyl-21H,23H-porphyrin platinum(II) (abbreviation: [PtOEP]) Platinum complexes such as tris(1,3-diphenyl-1,3-propanedionato)(monofena (Eu(DBM)3(Phen)]), Tris[1-(2-phenanthroyl)-3,3,3-trifluoroacetonato](monophenanthroyl) Europium(III) (abbreviation: [Eu(TTA)3(Phen)]) Rare earth metal complexes are included.

[0292] Among the above, the organometallic iridium complex having a pyrazine skeleton is an embodiment of the present invention. In particular, [Ir(dmdppr-dm Organometallic iridium complexes with cyano groups, such as iridium phosphate (CP)2(dpm), are highly stable. Very preferable.

[0293] In addition, blue luminescent substances are those with a photoluminescence peak wavelength of 430 nm or more. It is preferable to use a substance with a wavelength of 70 nm or less, more preferably 430 nm to 460 nm. In addition, the green luminescent material has a photoluminescence peak wavelength of 500 nm or more. 0 nm or less, and more preferably, a substance with a wavelength between 500 nm and 530 nm may be used. The luminescent material has a photoluminescence peak wavelength of 610 nm or more and 680 nm or more. More preferably, a substance having a wavelength of 620 nm or more and 680 nm or less may be used. Luminescence measurements can be performed on either a solution or a thin film.

[0294] By using such compounds in combination with the microcavity effect, the above-mentioned colors can be more easily obtained. At this time, the semi-transparent film required to obtain the microcavity effect can be obtained. The thickness of the semi-reflective electrode (metal thin film portion) is preferably 20 nm or more and 40 nm or less. The thickness is usually greater than 25 nm and less than 40 nm. Note that the efficiency decreases when the thickness exceeds 40 nm. There is a possibility that this may happen.

[0295] The organic compounds (host material, assist material) used in the light-emitting layer 723 are light-emitting materials (gel A material that has an energy gap larger than that of a non-linear material is called a Alternatively, a plurality of types may be selected and used. The conductive materials can also be used as a host material or an assist material, respectively.

[0296] When the light-emitting substance is a fluorescent material, the host material is a material having an energy level of a singlet excited state. It is preferable to use an organic compound having a large energy level and a small energy level of the triplet excited state. For example, it is preferable to use anthracene derivatives or tetracene derivatives. -Phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carba PCzPA, 3-[4-(1-naphthyl)-phenyl]-9-phenyl -9H-Carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthra 7-[4-(10-phenyl)phenyl]-9H-carbazole (abbreviation: CzPA), [c,g]carbazole (abbreviation: c gDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]- Benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl- 10-{4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4'-yl} Anthracene (abbreviation: FLPPA), 5,12-diphenyltetracene, 5,12-bis (biphenyl-2-yl)tetracene and the like.

[0297] When the light-emitting material is a phosphorescent material, the host material is a material that has a triplet excitation energy of the light-emitting material. (energy difference between the ground state and the triplet excited state) In this case, in addition to zinc and aluminum-based metal complexes, Oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline Dibenzoquinoxaline derivatives, dibenzothiophene derivatives, dibenzofuran derivatives Conductors, pyrimidine derivatives, triazine derivatives, pyridine derivatives, bipyridine derivatives, phenanthroline In addition to anthroline derivatives, aromatic amines and carbazole derivatives can be used. .

[0298] Specifically, tris(8-quinolinolato)aluminum(III) (abbreviation: Alq), Tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq3), Bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq 2) Bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq ), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPB O), bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBT Z), 2-(4-biphenylyl)-5-(4-tert-butylphenyl) -1,3,4-Oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert -butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OX D-7), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl) 2,2',2''-(1,3,5 -benzenetriyl)-tris(1-phenyl-1H-benzimidazole) (abbreviation: T PBI), Bathophenanthroline (abbreviation: BPhen), Bathocuproine (abbreviation: BC P), 2,9-bis(naphthalene-2-yl)-4,7-diphenyl-1,10-phenanthracene NBphen, 9-[4-(5-phenyl-1,3,4-oxazolidinyl) Azole-2-yl)phenyl]-9H-carbazole (abbreviation: CO11) and other heterocyclization Examples of aromatic amine compounds include aromatic amine compounds such as NPB, TPD, and BSPB.

[0299] In addition, anthracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, di Benzo[g,p]chrysene derivatives and other condensed polycyclic aromatic compounds are included. ,10-Diphenylanthracene (abbreviation: DPAnth), N,N-diphenyl-9-[ 4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (Abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (Abbreviation: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4 -(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazole-3 -amine (abbreviation: PCAPBA), 9,10-diphenyl-2-[N-phenyl-N-( 9-Phenyl-9H-carbazol-3-yl)amino]anthracene (abbreviation: 2PCA PA), 6,12-dimethoxy-5,11-diphenylchrysene, N,N,N',N', N'',N'',N''',N'''-Octaphenyldibenzo[g,p]chrysene-2 ,7,10,15-tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9 -anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 3,6-difluoro Phenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol DPCzPA, 9,10-bis(3,5-diphenylphenyl)anthracene DPPA), 9,10-di(2-naphthyl)anthracene (DNA), 2-tert-Butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuD NA), 9,9'-bianthryl (abbreviation: BANT), 9,9'-(stilbene-3,3 '-Diyl)diphenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4' -diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrenyl) Benzene (abbreviation: TPB3) and the like can be used.

[0300] In addition, when a plurality of organic compounds are used in the light-emitting layer 723, the compound that forms an exciplex is used as the light-emitting compound. In this case, various organic compounds are appropriately combined to use the material. However, in order to efficiently form an exciplex, it is necessary to use a compound that easily accepts holes. A compound that easily accepts electrons (hole transport material) is combined with a compound that easily accepts electrons (electron transport material). It is particularly preferable to use a material having a hole transporting property and an electron transporting property. The materials described in this embodiment mode can be used.

[0301] TADF materials are materials that convert triplet excited states into singlet excited states using a small amount of thermal energy. It is possible to convert the light into a singlet state (reverse intersystem crossing), and efficiently emit light (fluorescence) from the singlet excited state. The conditions for efficiently obtaining thermally activated delayed fluorescence are as follows: The energy difference between the doublet excitation level and the singlet excitation level is 0 eV or more and 0.2 eV or less, preferably In addition, the delayed fluorescence in TADF materials is The light is an emission that has a spectrum similar to that of normal fluorescence, but has a significantly longer lifespan. The lifespan of -6 seconds or more, preferably 10 -3 More than seconds.

[0302] Examples of TADF materials include fullerenes and their derivatives, and acridines such as proflavine. Derivatives, eosin, etc. Also, magnesium (Mg), zinc (Zn), cadmium (Cd) Cd, Sn, Pt, In, or Palladium Examples of metal-containing porphyrins include those containing Pd. For example, protoporphyrin-tin fluoride complex (SnF2(Proto IX)), meso Porphyrin-Tin Fluoride Complex (SnF2(Meso IX)), Hematoporphyrin- Tin fluoride complex (SnF2(Hemato IX)), coproporphyrin tetramethyl Ester-Tin Fluoride Complex (SnF2(Copro III-4Me)), Octaethyl Porphyrin-tin fluoride complex (SnF2(OEP)), etioporphyrin-tin fluoride SnF2(Etio I) complex, octaethylporphyrin-platinum chloride complex (Pt Cl2OEP) etc.

[0303] In addition, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[ 2,3-a]carbazol-11-yl)-1,3,5-triazine (PIC-TRZ) , 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazo PCCz PTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6- Diphenyl-1,3,5-triazine (PXZ-TRZ), 3-[4-(5-phenyl- 5,10-Dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2 ,4-Triazole (PPZ-3TPT), 3-(9,9-dimethyl-9H-acridine -10-yl)-9H-xanthen-9-one (ACRXTN), bis[4-(9,9- Dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS), 10-Phenyl-10H,10'H-spiro[acridine-9,9'-anthracene]- π-electron rich heteroaromatic rings and π-electron deficient heteroaromatic rings such as 10'-one (ACRSA) In addition, a heterocyclic compound having a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring can be used. The substance in which the aromatic heterocycle is directly bonded to the π-electron-rich heterocycle exhibits the donor property of the π-electron-poor heterocycle. The acceptor properties of the toe-shaped heteroaromatic rings are both strong, and the energies of the singlet and triplet excited states are This is particularly preferable since the energy difference is small.

[0304] In addition, when using a TADF material, it can also be used in combination with other organic compounds.

[0305] <<Electron transport layer 724>> The electron transport layer 724 emits electrons injected from the conductor 788 by the electron injection layer 725. The electron transport layer 724 is a layer that transports electrons to the light-transporting layer 723. The electron transport material used in the electron transport layer 724 is 1×10 -6 cm 2 / Vs or higher In addition, if a material has a higher electron transporting property than a hole transporting property, Others than these may be used.

[0306] Electron transport materials include quinoline ligands, benzoquinoline ligands, and oxazole ligands. or a metal complex having a thiazole ligand, an oxadiazole derivative, or a triazole derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, etc. In addition, π-electron-deficient heteroaromatic compounds such as nitrogen-containing heteroaromatic compounds can also be used. can.

[0307] Specifically, Alq3, tris(4-methyl-8-quinolinolato)aluminum (abbreviation: Almq3), bis(10-hydroxybenzo[h]quinolinato)beryllium (abbreviation: B eBq2), BAlq, Zn(BOX)2, bis[2-(2-hydroxyphenyl)benzene zothiazolato]zinc (abbreviation: Zn(BTZ)2) and other metal complexes, )-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: P BD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxazolidinyl Azole-2-yl]benzene (abbreviation: OXD-7), 3-(4'-tert-butyl phenyl)-4-phenyl-5-(4''-biphenyl)-1,2,4-triazole (abbreviation Name: TAZ), 3-(4-tert-butylphenyl)-4-(4-ethylphenyl)- 5-(4-biphenylyl)-1,2,4-triazole (abbreviation: p-EtTAZ), Phenanthroline (abbreviation: Bphen), Bathocuproine (abbreviation: BCP), 4,4' -Bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs) Heteroaromatic compounds, 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[ f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3'-(dibenzothio [4-phenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[4-(3,6-diphenyl-9H-carbazole -9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-II I) 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quino Xaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzothiophene-4- 6mDBTPDBq-II and the like quinoxaline or dibenzoquinoxaline derivatives can be used.

[0308] In addition, poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexyl Fluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF- Py), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2' -bipyridine-6,6'-diyl) (abbreviation: PF-BPy) You can also be there.

[0309] The electron transport layer 724 may be a single layer or a laminate of two or more layers made of the above-mentioned materials. The structure may be such that

[0310] <<Electron injection layer 725>> The electron injection layer 725 is a layer containing a substance with a high electron injection property. Lithium fluoride (LiF), Cesium fluoride (CsF), Calcium fluoride (CaF2), Lithium oxide (LiO x ) and the like, alkali metals, alkaline earth metals, or their Compounds can be used. Also rare earth metals such as erbium fluoride (ErF3) can be used. A compound can be used. Alternatively, an electride can be used for the electron injection layer 725. For example, an electride is a mixture of calcium and aluminum oxide with high electron density. In addition, the above-mentioned material constituting the electron transport layer 724 may be used. You can also be there.

[0311] In addition, the electron injection layer 725 is made of a composite material obtained by mixing an organic compound and an electron donor. Such composite materials are made by adding electrons to organic compounds by electron donors. In this case, the organic compound is a fluorine-containing compound. It is preferable that the material has excellent transport properties for the generated electrons. Specifically, for example, the above-mentioned electron The electron transport material (metal complex, heteroaromatic compound, etc.) used for the transport layer 724 can be used. The electron donor may be any substance that exhibits electron donating properties to organic compounds. Specifically, alkali metals, alkaline earth metals and rare earth metals are preferred, and lithium, cesium, etc. Examples of the elements include aluminum, magnesium, calcium, erbium, and ytterbium. Alkali metal oxides and alkaline earth metal oxides are preferred, and lithium oxide, calcium oxide, Examples of the cations include barium oxide and barium phosphate. In addition, Lewis bases such as magnesium oxide are used. It is also possible to use organic compounds such as tetrathiafulvalene (TTF). It is also possible.

[0312] <<Charge generation layer 792>> The charge generating layer 792 generates a charge when a voltage is applied between the conductor 772 and the conductor 788. Of the two EL layers 786 in contact with the charge generating layer 792, the EL layer 786 closest to the conductor 772 786 and has the function of injecting holes into the EL layer 786 on the opposite side to the conductor 788. For example, in the light-emitting element 782 shown in FIG. The EL layer 786a has a function of injecting electrons and the EL layer 786b has a function of injecting holes. The charge generation layer 792 is a material in which an electron acceptor is added to a hole transport material. Alternatively, an electron donor may be added to the electron transporting material. In addition, both of these structures may be laminated. By forming the layer 792, the driving current of the display device 10 when the EL layer is laminated is reduced. It is possible to suppress the increase in pressure.

[0313] In the case where the charge generating layer 792 has a structure in which an electron acceptor is added to a hole transporting material, The electron acceptor is 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroethylene. Examples of the quinodimethane (abbreviation: F4-TCNQ), chloranil, etc. Examples of the oxides include those of metals belonging to Groups 4 to 8 of the periodic table. are vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tantalum oxide Examples of the oxide include rhenium oxide, manganese oxide, and rhenium oxide.

[0314] In the case where the charge generating layer 792 has a structure in which an electron donor is added to an electron transporting material, The electron donor may be an alkali metal, an alkaline earth metal, a rare earth metal, or an element of the periodic table. Metals belonging to Groups 2 and 13 in the above and their oxides and carbonates can be used. Physically, lithium (Li), cesium (Cs), magnesium (Mg), calcium ( Ca), ytterbium (Yb), indium (In), lithium oxide, cesium carbonate, etc. It is preferable to use an organic compound such as tetrathianaphthalene as an electron donor. It may also be used as.

[0315] The light-emitting element 782 can be fabricated by a vacuum process such as deposition, or by a spin-coating method or ink-jet printing. A solution process such as a jet method can be used. When a deposition method is used, deposition method, ion plating method, ion beam deposition method, molecular beam deposition method, vacuum deposition method, etc. Physical vapor deposition (PVD) or chemical vapor deposition (CVD) can be used. The functional layers included in the EL layer of the element (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection The charge generation layer and the charge deposition layer are formed by deposition (vacuum deposition, etc.), coating (dip coating, etc.) , die coating method, bar coating method, spin coating method, spray coating method, etc.), printing method (ink Jet printing, screen printing, offset printing, flexography It can be formed by a method such as a printing method, a gravure method, a microcontact method, etc. .

[0316] Note that each functional layer (hole injection layer, hole transport layer, etc.) constituting the EL layer of the light-emitting element shown in this embodiment The materials for the charge generating layer (electron transport layer, light emitting layer, electron transport layer, electron injection layer) and the charge generating layer are limited to the materials mentioned above. However, other materials can be used in combination as long as they fulfill the functions of each layer. Examples of the polymer compounds include oligomers, dendrimers, polymers, etc. ), medium molecular weight compounds (compounds in the intermediate range between low molecular weight and high molecular weight: molecular weight 400 to 4000), Organic compounds (quantum dot materials, etc.) can be used. , colloidal quantum dot materials, alloy quantum dot materials, core-shell quantum dot materials, Core-type quantum dot materials and the like can be used.

[0317] The configuration examples exemplified in this embodiment and the corresponding drawings, etc., are at least partially It can be implemented in appropriate combination with other configuration examples or drawings, etc.

[0318] This embodiment may be appropriately combined with at least a part of other embodiments described in this specification. It can be implemented together.

[0319] (Embodiment 2) In this embodiment, a transistor that can be used in a display device according to one embodiment of the present invention will be described. We will explain about this.

[0320] <Transistor configuration example 1> 27A, 27B, and 27C show a display device that can be used in one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200A and the periphery of the transistor 200A. The display unit 33, the gate driver circuit 21, the source driver circuit 22, and The transistor 200A can be applied to the transistor included in the circuit 40.

[0321] FIG. 27A is a top view of a transistor 200A. Also, FIGS. 27B and 27C are 27(B) is a cross-sectional view of a transistor 200A. 1A is a cross-sectional view of a portion indicated by a dashed line in the direction of the channel length of the transistor 200A. FIG. 27(C) is also a cross-sectional view. 1 is a cross-sectional view of the transistor 200A taken along the channel width direction. In the top view of FIG. 27(A), some elements have been omitted for clarity.

[0322] The transistor 200A includes a metal oxide 230a disposed on a substrate (not shown). 2, a metal oxide 230b is disposed on the metal oxide 230a, and The conductor 242a and the conductor 242b are arranged at a distance from each other. and on the conductor 242b, and an opening is formed between the conductor 242a and the conductor 242b. The insulating layer 280 is formed on the insulating layer 280, the conductor 260 is disposed in the opening, and the metal oxide 230b is disposed in the opening. The conductor 242a, the conductor 242b, and the insulator 280 are disposed between the conductor 260 and the insulator 280. The insulator 250 is connected to the metal oxide 230b, the conductor 242a, the conductor 242b, and the insulator 250. The metal oxide 230c is disposed between the insulating body 280 and the insulator 250. As shown in FIG. 27B and FIG. 27C, the upper surface of the conductor 260 is covered with the insulator 250. 254, metal oxide 230c, and insulator 280. In the following, the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c These may be collectively referred to as metal oxide 230. b may be collectively referred to as conductor 242.

[0323] As shown in FIG. 27B, the transistor 200A includes a conductor 242a and a conductor 242b. The side surface of the transformer 260 of the transformer 260 shown in FIG. The resistor 200A is not limited to this, and may be formed of the conductors 242a and 242b. The angle between the side and bottom is 10° to 80°, preferably 30° to 60°. In addition, the opposing side surfaces of the conductor 242a and the conductor 242b may have multiple surfaces. It may be possible.

[0324] As shown in FIGS. 27B and 27C, the insulator 224, the metal oxide 230a, the metal oxide The insulating layer 230b is a conductor 242a, a conductor 242b, and a metal oxide 230c. 80 and an insulator 254 is preferably disposed between the insulator 254 and the As shown in FIG. 27(B) and (C), the side surface of the metal oxide 230c, the top surface of the conductor 242a, and The side surface, the top surface and side surface of the conductor 242b, the side surface of the metal oxide 230a, and the top surface and side surface of the metal oxide 230b It is preferable that the insulating material 224 has a side surface and an area in contact with the top surface of the insulating material 224 .

[0325] In the transistor 200A, a region in which a channel is formed (hereinafter, a channel forming region ) and in the vicinity thereof, metal oxide 230a, metal oxide 230b, and Although a configuration in which three layers of metal oxide 230c are laminated is shown, the present invention is not limited to this. For example, a two-layer structure of metal oxide 230b and metal oxide 230c, or a four-layer structure The above-mentioned laminated structure may be provided. Although 60 is shown as a two-layer laminated structure, the present invention is not limited to this. For example, the conductor 260 may have a single-layer structure or a laminated structure of three or more layers. In addition, each of the metal oxides 230a, 230b, and 230c is 2 It may have a laminated structure of more than one layer.

[0326] For example, metal oxide 230c may include a first metal oxide and a second metal oxide on the first metal oxide. In the case where the first metal oxide has a laminated structure made of a metal oxide, the first metal oxide is the same as the metal oxide 230b. The second metal oxide preferably has a composition similar to that of the metal oxide 230a. It is nice.

[0327] Here, the conductor 260 functions as a gate electrode of the transistor, and the conductors 242a and The conductors 242b function as a source electrode and a drain electrode, respectively. The conductor 260 is sandwiched between the opening of the insulator 280 and the conductors 242a and 242b. The conductor 260, the conductor 242a, and the conductor 242b are formed so as to be embedded in the region. The arrangement of the conductive body 242b is selected to be self-aligned with respect to the opening of the insulator 280. In the transistor 200A, the gate electrode is connected between the source electrode and the drain electrode. Therefore, the conductor 260 can be arranged in a self-aligning manner by providing a margin for alignment. Since the transistor 200A can be formed without any need for a metal layer, the area occupied by the transistor 200A can be reduced. This allows the display device to have high resolution. It can be made into an edge.

[0328] As shown in FIG. 27, the conductor 260 is a conductor 2 provided inside the insulator 250. 60a, and a conductor 260b provided so as to be embedded inside the conductor 260a. It is preferable to have

[0329] As shown in FIGS. 27(A), (B), and (C), the transistor 200A has a substrate ( (not shown). 16, a conductor 205 disposed so as to be embedded in an insulator 216, and an insulator 216. An insulator 222 is disposed on the conductor 205, and an insulator 223 is disposed on the insulator 222. 24. Also, a metal oxide 230a is disposed on the insulator 224. It is preferable that the above-mentioned

[0330] In addition, an insulator 274 serving as an interlayer film and an insulator 2 Here, the insulator 274 is preferably disposed between the conductor 260 and the insulator 25. 0, the insulator 254, the metal oxide 230c, and the upper surface of the insulator 280. is preferred.

[0331] The insulators 222, 254, and 274 are made of hydrogen (e.g., hydrogen atoms, hydrogen molecules, etc.). For example, the insulator 22 has a function of suppressing the diffusion of at least one of the following: 2, insulator 254, and insulator 274 are insulators 224, 250, and insulator 28. It is preferable that the hydrogen permeability is lower than 0. Also, the insulator 222 and the insulator 254 are made of an acid. The material has a function of suppressing the diffusion of at least one element (e.g., oxygen atoms, oxygen molecules, etc.). For example, the insulator 222 and the insulator 254 are preferably , and preferably has a lower oxygen permeability than insulator 280.

[0332] Here, the insulator 224, the metal oxide 230, and the insulator 250 are insulator 280 and insulator 270. The insulator 281 is separated from the insulator 254 by the insulator 274. 224, metal oxide 230, and insulator 250, insulator 280, and insulator 281 Impurities such as hydrogen and excess oxygen are mixed into the insulator 224, the metal oxide 230a, and the metal oxide 230b. Therefore, contamination of the object 230b and the insulator 250 can be suppressed.

[0333] A conductor 240 (conductor) electrically connected to the transistor 200A and functioning as a plug It is preferable that a conductor 240a and a conductor 240b are provided. An insulator 241 (insulator 241a and insulator 241b) is provided on the side of the functional conductor 240. That is, the insulator 254, the insulator 280, the insulator 274, and the insulator 2 An insulator 241 is provided in contact with the inner wall of the opening of the heat exchanger 81. A first conductor of the conductor 240 is provided on the inner side, and a second conductor of the conductor 240 is provided on the inner side. Here, the height of the upper surface of the conductor 240 and the height of the upper surface of the insulator 281 may be set to be equal to or larger than the height of the upper surface of the conductor 240. In the transistor 200A, the first conductor of the conductor 240 is The present invention is not limited to the above-described configuration in which the first conductor and the second conductor of the conductor 240 are stacked. For example, the conductor 240 may be a single layer or a laminated structure of three or more layers. In the case where the structure has a laminated structure, ordinal numbers are given in the order of formation, and the layers are divided into groups. There may be cases where it is different.

[0334] The transistor 200A also includes a metal oxide 230 (metal oxide 230a, metal oxide 230b, and metal oxide 230c) function as oxide semiconductors. It is preferable to use a metal oxide (hereinafter, also referred to as an oxide semiconductor) that has a high conductivity. The metal oxide 230 that is to be the channel forming region is a band gap metal oxide, as described above. It is preferable to use one having a gap of 2 eV or more, preferably 2.5 eV or more.

[0335] As shown in FIG. 27B, the metal oxide 230b is formed in a region that does not overlap with the conductor 242. The thickness of the film in the region where the conductive material 242 overlaps may be thinner than the thickness of the film in the region where the conductive material 242 overlaps. When forming the conductive layer 242a and the conductive layer 242b, a part of the upper surface of the metal oxide layer 230b is removed. A conductive film that becomes the conductor 242 is formed on the upper surface of the metal oxide 230b. When the film is formed, a region with low resistance may be formed near the interface with the conductive film. Thus, the metal oxide 230b is disposed between the conductor 242a and the conductor 242b on the upper surface of the metal oxide 230b. By removing the low resistance region, the formation of a channel in the region is suppressed. It is possible.

[0336] According to one embodiment of the present invention, a display device having a small-sized transistor and high resolution can be provided. Alternatively, a display device having a transistor with a large on-state current and high luminance can be provided. Alternatively, a display device having a high-speed transistor and a high-speed operation can be provided. Alternatively, a highly reliable display device having a transistor with stable electrical characteristics can be provided. Alternatively, a display device having a transistor with low off-state current and low power consumption can be provided. It is possible to provide a display device with low

[0337] Detailed structure of a transistor 200A that can be used in a display device according to one embodiment of the present invention This article explains:

[0338] The conductor 205 is arranged so as to have an overlapping area with the metal oxide 230 and the conductor 260. In addition, the conductor 205 is preferably embedded in the insulator 216. Therefore, it is preferable to improve the flatness of the upper surface of the conductor 205. For example, The average surface roughness (Ra) of the upper surface is 1 nm or less, preferably 0.5 nm or less, and more preferably 0 This allows the insulator 224 formed on the conductor 205 to be 0.3 nm or less. and improve the crystallinity of the metal oxide 230b and the metal oxide 230c. It is possible.

[0339] Here, the conductor 260 functions as a first gate (also called a top gate) electrode. The conductor 205 may be used as a second gate (also called a bottom gate) electrode. In this case, the potential applied to the conductor 205 may be changed to the potential applied to the conductor 260. By changing the potential of transistor 200A independently of the potential of the th Control In particular, applying a negative potential to the conductor 205 can control the transistor. V of 200A th It is possible to reduce the off-current by increasing the Therefore, applying a negative potential to the conductor 205 increases the current flow rate of the conductor 260 compared to when no negative potential is applied. It is possible to reduce the drain current of the transistor 200A when the potential applied to the can.

[0340] In addition, the conductor 205 is provided to be larger than the channel formation region in the metal oxide 230. In particular, as shown in FIG. 27(C), the conductor 205 is a channel of the metal oxide 230. It is preferable that the film is stretched in the region outside the end portion intersecting with the width direction of the film. On the outer side of the side surface of the metal oxide 230 in the channel width direction, a conductor 205 and a conductor It is preferable that the electric conductor 260 is overlapped with an insulator therebetween.

[0341] With the above-mentioned configuration, the electric field of the conductor 260 having the function of the first gate electrode and The metal oxide 23 is then oxidized by the electric field of the conductor 205, which functions as a second gate electrode. 0 channel forming region can be electrically surrounded.

[0342] As shown in FIG. 27C, the conductor 205 is extended to function as a wiring. However, the present invention is not limited to this, and a conductive material that functions as a wiring may be provided under the conductive material 205. A body may be provided.

[0343] The conductor 205 is made of a conductive material mainly composed of tungsten, copper, or aluminum. Although the conductor 205 is illustrated as a single layer, it may have a laminated structure. For example, a laminate of titanium, titanium nitride and the above conductive material may be used.

[0344] In addition, hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxide are present under the conductor 205. It has the function of suppressing the diffusion of impurities such as molecules (N2O, NO, NO2, etc.) and copper atoms (see above). A conductor through which the impurities are unlikely to permeate may be provided. It has a function of suppressing the diffusion of at least one of the oxygen molecules (such as oxygen) (the oxygen is less likely to permeate). It is preferable to provide a conductor. The function of suppressing the diffusion of any one or all of the above impurities and / or oxygen is a function of suppressing the diffusion of any one or all of the above impurities and / or oxygen. It is noh.

[0345] By providing a conductor having a function of suppressing the diffusion of oxygen under the conductor 205, It is possible to prevent the conductivity of the conductive material 205 from decreasing due to oxidation. Examples of conductors having this function include tantalum, tantalum nitride, ruthenium, or It is preferable to use ruthenium oxide or the like. Therefore, the first conductor of the conductor 205 and In this case, the conductive material may be a single layer or a multilayer.

[0346] The insulator 214 prevents impurities such as water or hydrogen from entering the transistor 200A from the substrate side. It is preferable that the insulator has a function as a barrier insulating film that suppresses the above-mentioned problem. 214 is hydrogen atom, hydrogen molecule, water molecule, nitrogen atom, nitrogen molecule, nitric oxide molecule (N2O, It has the function of suppressing the diffusion of impurities such as NO, NO2, copper atoms, etc. (The above impurities are It is preferable to use an insulating material. The insulating material has a function of suppressing the diffusion of at least one of oxygen molecules (oxygen is less likely to permeate). It is preferred to use a conformal material.

[0347] For example, it is preferable to use aluminum oxide or silicon nitride as the insulator 214. This allows impurities such as water or hydrogen to enter the transistor from the substrate side rather than the insulator 214. It is possible to suppress the diffusion of the oxide contained in the insulator 224 to the 200A side. This can prevent the element from diffusing toward the substrate side beyond the insulator 214.

[0348] The insulators 216, 280, and 281, which function as interlayer films, are It is preferable that the dielectric constant of the interlayer is lower than that of 214. By using a material with a low dielectric constant as the interlayer, The parasitic capacitance between the lines can be reduced. For example, the insulator 216, the insulator 280, As the insulator 281, silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride Silicon, silicon oxide doped with fluorine, silicon oxide doped with carbon, carbon and nitrogen Added silicon oxide, silicon oxide having vacancies, or the like may be used appropriately.

[0349] The insulators 222 and 224 function as gate insulators.

[0350] Here, the insulator 224 in contact with the metal oxide 230 is preferably capable of desorbing oxygen by heating. In this specification, the oxygen released by heating may be referred to as excess oxygen. For example, The insulator 224 may be made of silicon oxide, silicon oxynitride, or the like. By providing an insulator containing the metal oxide 230 in contact with the metal oxide 230, oxygen vacancies in the metal oxide 230 can be eliminated. This can reduce the resistance and improve the reliability of the transistor 200A.

[0351] Specifically, the insulator 224 is made of an oxide material from which some oxygen is released when heated. The oxide that releases oxygen by heating is preferably a TDS (Thermal Desorption Absorption Spectroscopy (Absorptive Spectroscopy) analysis revealed that the amount of oxygen in terms of oxygen atoms was The amount of desorption is 1.0×10 18 atoms / cm 3 More than 1.0×10 19 ato ms / cm 3 More preferably, 2.0×10 19 atoms / cm 3 More than or equal to 3 .0×10 20 atoms / cm 3 The oxide film is as above. The surface temperature of the film in the above condition is 100°C to 700°C or 100°C to 400°C. The lower range is preferred.

[0352] As shown in FIG. 27C, the insulator 224 does not overlap the insulator 254 and is made of metal. The thickness of the film in the region not overlapping with the oxide 230b may be thinner than the thickness of the film in the other region. In the insulator 224, a portion that does not overlap the insulator 254 and the metal oxide 230b is The thickness of the non-oxidized region is preferably such that the oxygen can be sufficiently diffused.

[0353] The insulator 222, like the insulator 214, prevents impurities such as water or hydrogen from entering the transistor from the substrate side. It is preferable that the insulating film has a function as a barrier insulating film that suppresses the inclusion of the insulating film in the transistor 200A. For example, it is preferable that the insulator 222 has a lower hydrogen permeability than the insulator 224. The insulator 224, the metal oxide 230, and the insulator 254 and the insulator 274 are connected to each other. By surrounding the transistor with the insulator 250, impurities such as water or hydrogen from the outside can be prevented from entering the transistor. It is possible to prevent the current from reaching 200A.

[0354] Additionally, the insulator 222 may include at least one diffusion barrier for oxygen (e.g., oxygen atoms, oxygen molecules, etc.). It is preferable that the insulating material has a function of suppressing the above-mentioned oxygen from passing through. The insulator 222 preferably has a lower oxygen permeability than the insulator 224. By having the function of suppressing the diffusion of impurities, the oxygen contained in the metal oxide 230 is prevented from being diffused to the substrate side. In addition, the conductor 205 is preferably made of an insulator 224. Therefore, it is possible to suppress the reaction between the oxygen contained in the metal oxide 230 and the oxygen contained in the metal oxide 230.

[0355] The insulator 222 is an oxide of one or both of aluminum and hafnium, which are insulating materials. It is advisable to use an insulator containing oxides of either or both of aluminum and hafnium. As an insulator, it is preferable to use aluminum oxide or hafnium oxide. It is preferable to use oxides containing aluminum and hafnium (hafnium aluminate). When the insulator 222 is formed using such a material, the insulator 222 is preferably a metal oxide. The release of oxygen from the metal oxide 230 and the removal of the metal oxide 230 from the periphery of the transistor 200A. The layer functions as a layer for suppressing the intrusion of impurities such as hydrogen into the semiconductor substrate.

[0356] Alternatively, for example, aluminum oxide, bismuth oxide, or germanium oxide may be added to these insulators. , niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, oxide Zirconium may be added, or these insulators may be nitrided. Silicon oxide, silicon oxynitride, or silicon nitride may be laminated on the body.

[0357] The insulator 222 may be, for example, aluminum oxide, hafnium oxide, tantalum oxide, or oxide. Zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrTi Insulating materials include so-called high-k materials such as (Ba,Sr)TiO3 (BST) As transistors become smaller and more highly integrated, Thinning of the gate insulator may cause problems such as leakage current. By using a high-k material as an insulator that functions as a gate insulator, the transistor can be This makes it possible to reduce the gate potential during start operation.

[0358] The insulator 222 and the insulator 224 may have a laminated structure of two or more layers. In this case, the laminate structure is not limited to a laminate structure made of the same material, and may be a laminate structure made of different materials. For example, an insulator similar to the insulator 224 may be provided under the insulator 222.

[0359] The metal oxide 230 is a metal oxide 230a and a metal oxide 230 on the metal oxide 230a. b and a metal oxide 230c on the metal oxide 230b. By having the metal oxide 230a in the lower portion, the structure formed below the metal oxide 230a It is possible to suppress the diffusion of impurities from the metal to the metal oxide 230b. By having the metal oxide 230c on the metal oxide 230b, The diffusion of impurities from the structure formed on the other side to the metal oxide 230b can be suppressed. do.

[0360] The metal oxide 230 has a layered structure due to oxides having different atomic ratios of each metal atom. Specifically, it is preferable that the metal oxide used for the metal oxide 230a has the following structure: The atomic ratio of element M in the composition element is It is preferable that the atomic ratio of the element M in the metal oxide 230a is larger than that of the element M in the metal oxide 230a. In the metal oxide 230b, the atomic ratio of element M to In is It is preferable that the atomic ratio of element M to In in the metal oxide is larger than that of element In. In the metal oxide used for the metal oxide 230b, the atomic ratio of In to the element M is The atomic ratio of In to element M in the metal oxide 230a is greater than that of In. It is preferable that the metal oxide 230c is not a metal oxide 230a or a metal oxide 230b. Any metal oxide that can be used for 30b can be used.

[0361] The metal oxide 230a, the metal oxide 230b, and the metal oxide 230c have crystallinity. It is preferable to use CAAC-OS (c-axis aligned crystal alignment) It is preferable to use CA Crystalline oxides such as AC-OS have few impurities and defects (oxygen vacancies, etc.) and are highly crystalline. Therefore, the metal oxide film formed by the source electrode or the drain electrode is This can suppress the extraction of oxygen from the oxide 230b. Even in this case, it is possible to suppress the extraction of oxygen from the metal oxide 230b. Therefore, the transistor 200A is not subject to high temperatures during the manufacturing process (so-called thermal budget). ) is stable.

[0362] In addition, the energy of the conduction band minimum of the metal oxide 230a and the metal oxide 230c is It is preferable that the energy of the valence layer is higher than the energy of the bottom of the conduction band of the oxide 230b. The electron affinity of the metal oxide 230a and the metal oxide 230c is smaller than that of the metal oxide 230b. In this case, the metal oxide 230c is preferably smaller than the electron affinity of the metal oxide 230c. It is preferable to use a metal oxide that can be used for 30a. In the metal oxide used in the product 230c, the atomic ratio of element M in the constituent elements is In the metal oxide used in 230b, the atomic ratio of element M in the constituent elements is greater than that In addition, in the metal oxide 230c, the element M relative to In is preferably The atomic ratio of element M to In in the metal oxide used for the metal oxide 230b is It is preferable that the atomic ratio is larger than that of the metal oxide 230b. In the metal oxide 230c, the atomic ratio of In to the element M is It is preferable that the atomic ratio of In to the element M is larger than that of In.

[0363] Here, at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c, In other words, the energy level of the conduction band edge changes gradually. The conduction band minimum at the junction of the metal oxide 230a, the metal oxide 230b, and the metal oxide 230c The energy level can be said to change continuously or to be a continuous junction. In order to achieve this, the interface between the metal oxide 230a and the metal oxide 230b and the metal oxide 230b The defect level density of the mixed layer formed at the interface between the metal oxide 230c and the silicon dioxide 230 is reduced. stomach.

[0364] Specifically, the metal oxide 230a and the metal oxide 230b, the metal oxide 230b and the metal oxide The object 230c has a common element other than oxygen (major component), so that the defect level density For example, a mixed layer having a low In-Ga-Zn In the case of oxides, the metal oxide 230a and the metal oxide 230c are In-Ga-Zn oxide. Alternatively, the metal oxide 230c may be a gallium oxide, a Ga-Zn oxide, or a gallium oxide. For example, a laminated structure may be used. A laminated structure of Ga-Zn oxide on a substrate, or In-Ga-Zn oxide and the In-Ga A laminated structure of In-Zn oxide and gallium oxide can be used. A laminated structure of Ga-Zn oxide and an oxide not containing In was used as the metal oxide 230c. It may be used.

[0365] Specifically, the metal oxide 230a is In:Ga:Zn=1:3:4 [atomic ratio], Alternatively, a metal oxide having an atomic ratio of 1:1:0.5 may be used. b is In:Ga:Zn=4:2:3 [atomic ratio] or 3:1:2 [atomic ratio] The metal oxide 230c may be In:Ga:Zn=1: 3:4 [atomic ratio], In:Ga:Zn=4:2:3 [atomic ratio], Ga:Zn=2:1 [atomic ratio], or a metal oxide having a Ga:Zn=2:5 [atomic ratio] may be used. A specific example of the metal oxide 230c having a laminated structure is In:Ga:Zn=4: 2:3 [atomic ratio] and Ga:Zn=2:1 [atomic ratio] stacked structures, In:Ga:Zn = 4:2:3 [atomic ratio] and Ga:Zn = 2:5 [atomic ratio], In:Ga Examples include a laminated structure of Zn=4:2:3 [atomic ratio] and gallium oxide.

[0366] At this time, the main path of the carriers is the metal oxide 230b. By configuring the metal oxide 230a and the metal oxide 230c as described above, Defect levels at the interface between metal oxide 230b and metal oxide 230c The density can be reduced. Therefore, the effect of interface scattering on carrier conduction is small. As a result, the transistor 200A can achieve high on-state current and high frequency characteristics. In addition, when the metal oxide 230c has a laminated structure, the above-mentioned metal oxide 230b and the metal oxide In addition to the effect of reducing the defect state density at the interface with the metal oxide 230c, It is expected that the diffusion of the constituent elements of the insulating material 250 to the insulating material 250 side is suppressed. Specifically, the metal oxide 230c has a laminated structure, and an oxide layer not including In is provided above the laminated structure. In order to position the object, it is possible to suppress In that may diffuse to the insulator 250 side. 250 acts as a gate insulator, so if In diffuses, the transistor characteristics Therefore, by forming the metal oxide 230c into a laminated structure, a highly reliable surface can be obtained. It is therefore possible to provide a display device.

[0367] The metal oxide 230 is preferably a metal oxide that functions as an oxide semiconductor. For example, the metal oxide that will be the channel forming region of the metal oxide 230 is a band gap metal oxide. It is preferable to use an electron pump having a peak of 2 eV or more, preferably 2.5 eV or more. By using metal oxides with a wide band gap, the off-state current of transistors can be reduced. By using such a transistor, a display device with low power consumption can be provided. can.

[0368] On the metal oxide 230b, a conductor 242 that functions as a source electrode and a drain electrode is formed. (Conductor 242a and conductor 242b) are provided. The conductor 242 is made of aluminum. Aluminum, Chromium, Copper, Silver, Gold, Platinum, Tantalum, Nickel, Titanium, Molybdenum, Tungsten Stainless steel, hafnium, vanadium, niobium, manganese, magnesium, zirconium, Selected from the group consisting of ruthenium, indium, ruthenium, iridium, strontium, and lanthanum. or an alloy containing the above-mentioned metal elements or a combination of the above-mentioned metal elements. For example, tantalum nitride, titanium nitride, tungsten, Nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide Ruthenium, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum and nickel It is preferable to use an oxide containing tantalum nitride, titanium nitride, titanium and aluminium. Aluminum nitrides, tantalum and aluminum nitrides, ruthenium oxide, nitrides Ruthenium, oxides containing strontium and ruthenium, oxides containing lanthanum and nickel The material is a conductive material that is resistant to oxidation or that maintains its conductivity even when it absorbs oxygen. preferable.

[0369] By providing the conductor 242 so as to be in contact with the metal oxide 230, In the vicinity of the conductor 242, the oxygen concentration may decrease. In the vicinity of the conductor 242, the metal contained in the conductor 242 and the components of the metal oxide 230 In such a case, the conductive metal oxide 230 may form a metal compound layer containing The carrier density increases in the region near the body 242, and the region becomes a low resistance region.

[0370] Here, the region between the conductor 242a and the conductor 242b overlaps the opening of the insulator 280. This allows the conductor 260 to be self-aligned between the conductor 242a and the conductor 242b. The components can be arranged in a coordinated manner.

[0371] The insulator 250 functions as a gate insulator. The insulator 250 is preferably disposed in contact with the upper surface. Silicon oxide nitride, silicon nitride, silicon oxide doped with fluorine, silicon oxide doped with carbon Silicon oxide, silicon oxide doped with carbon and nitrogen, and silicon oxide with vacancies are used. In particular, silicon oxide and silicon oxynitride are stable against heat. preferable.

[0372] The insulator 250, like the insulator 224, has an impurity concentration of water or hydrogen in the insulator 250. The thickness of the insulator 250 is preferably 1 nm or more and 20 nm or less. It is preferred.

[0373] In addition, a metal oxide may be provided between the insulator 250 and the conductor 260. It is preferable that the insulating material 250 has a function of suppressing oxygen diffusion from the insulating material 250 to the conductor 260. This makes it possible to suppress oxidation of the conductor 260 due to oxygen contained in the insulator 250. can.

[0374] The metal oxide may also function as a part of the gate insulator. Therefore, when silicon oxide or silicon oxynitride is used for the insulator 250, the metal oxide It is preferable to use metal oxide, which is a high-k material with a high dielectric constant, for the gate. By forming the insulator into a stacked structure of the insulator 250 and the metal oxide, the transistor 20 0A can be made into a transistor that is stable against heat and has a high relative dielectric constant. The gate potential applied during transistor operation is then adjusted while maintaining the physical thickness of the gate insulator. In addition, it is possible to reduce the equivalent oxide thickness of the insulator that functions as the gate insulator. It is possible to reduce the EOT.

[0375] Specifically, hafnium, aluminum, gallium, yttrium, zirconium, tungsten The metal is selected from the group consisting of tin, titanium, tantalum, nickel, germanium, magnesium, etc. Metal oxides containing one or more of these metals can be used. In particular, aluminum , or hafnium oxide, which are insulators containing one or both of these oxides. Hafnium or oxides containing aluminum and hafnium (hafnium aluminate) It is preferable to use the following:

[0376] Although the conductor 260 is shown as having a two-layer structure in FIG. 27, it may have a single layer structure or a structure having three or more layers. The above laminated structure may also be used.

[0377] The conductor 260a is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, or a nitrogen oxide. Conductive material that suppresses the diffusion of impurities such as nitrogen molecules (N2O, NO, NO2, etc.) and copper atoms. It is preferable to use an oxygen atom or an oxygen molecule. It is also preferable to use a conductive material that has a function of suppressing diffusion.

[0378] In addition, the conductor 260a has a function of suppressing the diffusion of oxygen, and thus the conductor 260a is included in the insulator 250. The conductive material 260b is prevented from being oxidized by oxygen that is introduced into the conductive material 260b, thereby preventing the conductivity of the conductive material 260b from decreasing. Examples of conductive materials that have the function of suppressing oxygen diffusion include It is preferable to use tantalum, tantalum nitride, ruthenium, ruthenium oxide, or the like.

[0379] The conductor 260b is made of a conductive material mainly composed of tungsten, copper, or aluminum. In addition, since the conductor 260 also functions as wiring, It is preferable to use a highly conductive material such as tungsten, copper, or aluminum. The conductor 260b may have a laminated structure. For example, a laminated structure of titanium, titanium nitride and the above-mentioned conductive material may be used.

[0380] In addition, as shown in FIGS. 27(A) and 27(C), the metal oxide 230b does not overlap with the conductor 242. In other words, in the channel formation region of the metal oxide 230, the metal oxide 2 The side surface of the first gate electrode 30 is covered with the conductor 260. The electric field of the conductor 260, which functions as a barrier, can be easily applied to the side surface of the metal oxide 230. Therefore, the on-current of the transistor 200A is increased, and the frequency of the transistor 200A is increased. The characteristics can be improved.

[0381] The insulator 254, like the insulator 214, is designed to prevent impurities such as water or hydrogen from entering the insulator 280 side. Therefore, it has a function as a barrier insulating film that prevents the inclusion of For example, it is preferable that the insulator 254 has a lower hydrogen permeability than the insulator 224. Furthermore, as shown in FIG. 27(B) and (C), the insulator 254 is made of a metal oxide 230. the side surface of the conductor 242c, the top surface and side surface of the conductor 242a, the top surface and side surface of the conductor 242b, and the metal oxide 23 0a, the side of metal oxide 230b, and an area in contact with the top surface of insulator 224. With such a configuration, hydrogen contained in the insulator 280 is preferably 242a, conductor 242b, metal oxide 230a, metal oxide 230b, and insulator 22 4 from penetrating into the metal oxide 230 from the top or side surfaces.

[0382] Additionally, the insulator 254 is configured to have at least one diffusion barrier for oxygen (e.g., oxygen atoms, oxygen molecules, etc.). It is preferable that the insulating material has a function of suppressing the above-mentioned oxygen from passing through. Preferably, 254 has a lower oxygen permeability than insulator 280 or insulator 224 .

[0383] The insulator 254 is preferably formed by sputtering. The insulator 224 is formed by sputtering in an atmosphere containing oxygen. Oxygen can be added to the area adjacent to the contact area 254. This allows the insulating layer to be removed from the area. Oxygen can be supplied to the metal oxide 230 through the insulator 224. 254 has a function of suppressing the diffusion of oxygen upward, so that oxygen is prevented from diffusing into the metal oxide 230 In addition, the insulator 222 can prevent the diffusion of the insulating material 222 from the lower By having a function of suppressing the diffusion of oxygen to the metal oxide 230, oxygen is prevented from diffusing from the metal oxide 230 to the substrate side. In this way, the formation of the channel of the metal oxide 230 can be suppressed. This reduces the oxygen vacancies in the metal oxide 230 and This can suppress the normally-on state of the transistor.

[0384] The insulator 254 may be, for example, an oxide of one or both of aluminum and hafnium. It is preferable to form an insulator containing oxide of either or both of aluminum and hafnium. Insulators containing aluminum oxide, hafnium oxide, or aluminum and hafnium oxide It is preferable to use an oxide containing hafnium (eg, hafnium aluminate).

[0385] The insulator 254 having a barrier property against hydrogen is used to separate the insulator 224, the insulator 250, and the By covering the metal oxide 230, the insulator 280 is insulated from the insulator 224 by the insulator 254, and the metal oxide 230 is insulated from the insulator 224 by the insulator 254. The oxide 230 and the insulator 250 are separated from each other. Since impurities such as hydrogen can be prevented from entering from the outside, the current of the transistor 200A can be reduced. Therefore, the thermal characteristics and reliability can be improved.

[0386] The insulator 280 is formed by connecting the insulator 224, the metal oxide 230, and the conductor via the insulator 254. For example, the insulator 280 may be silicon oxide or silicon oxynitride. , silicon oxide nitride, silicon oxide doped with fluorine, silicon oxide doped with carbon, carbon It is preferable to use silicon oxide doped with hydrogen and nitrogen, or silicon oxide having vacancies. In particular, silicon oxide and silicon oxynitride are preferable because they are thermally stable. In addition, materials such as silicon oxide, silicon oxynitride, and silicon oxide with pores can be easily heated. This is preferable because it makes it easier to form a region containing more desorbed oxygen.

[0387] It is preferable that the concentration of impurities such as water or hydrogen in the insulator 280 is reduced. The top surface of the edge 280 may be flattened.

[0388] The insulator 274, like the insulator 214, is designed to prevent impurities such as water or hydrogen from being mixed into the insulator 280. It is preferable that the insulator 274 has a function as a barrier insulating film that suppresses the insulator 274 from being damaged. For example, an insulator that can be used for the insulator 214, the insulator 254, etc. is used. This can be done.

[0389] In addition, it is preferable to provide an insulator 281 that functions as an interlayer film on the insulator 274. The insulator 281, like the insulator 224, has a reduced concentration of impurities such as water or hydrogen in the film. It is preferable that the above is done.

[0390] In addition, the openings formed in the insulators 281, 274, 280, and 254 The conductor 240a and the conductor 240b are disposed on the substrate 240. The conductors 240a and 240b are disposed opposite each other with the conductor 260 in between. The height of the upper surface may be flush with the upper surface of the insulator 281 .

[0391] In addition, the insulators 281, 274, 280, and 254 are in contact with the inner walls of the openings. An insulator 241a is provided, and the first conductor of the conductor 240a is formed in contact with the side surface of the insulator 241a. A conductor 242a is located at least partially on the bottom of the opening. The conductor 240a contacts the conductor 242a. Similarly, the insulator 281, the insulator 274, the insulator 280 and an insulator 241b is provided in contact with the inner wall of the opening of the insulator 254. The first conductor of the conductor 240b is formed in contact with the bottom of the opening. Conductor 242b is located in one portion, and conductor 240b contacts conductor 242b.

[0392] The conductor 240a and the conductor 240b are mainly made of tungsten, copper, or aluminum. It is preferable to use a conductive material having a thickness of 100 μm. It may also have a layered structure.

[0393] In addition, when the conductor 240 has a laminated structure, the metal oxide 230a, the metal oxide 230b, Conductors in contact with the conductor 242, the insulator 254, the insulator 280, the insulator 274, and the insulator 281 The above-mentioned conductive material having the function of suppressing the diffusion of impurities such as water or hydrogen is used for the body. For example, tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, or Ruthenium oxide is preferably used. In addition, it is preferable to suppress the diffusion of impurities such as water or hydrogen. The conductive material having the function of providing the conductive layer may be used in a single layer or a multilayer structure. As a result, the oxygen added to the insulator 280 is absorbed by the conductors 240a and 240b. In addition, impurities such as water or hydrogen can be prevented from being generated from the upper layer of the insulator 281. is prevented from being mixed into the metal oxide 230 through the conductor 240a and the conductor 240b. It is possible.

[0394] The insulator 241a and the insulator 241b can be used, for example, for the insulator 254. The insulator 241a and the insulator 241b are in contact with the insulator 254. Since the insulator 280 is provided in the shape of a conductor 240a, impurities such as water or hydrogen can be easily absorbed from the insulator 280 and the like. It is possible to prevent the metal oxide 230 from being mixed with the conductive material 240b. The oxygen contained in the insulator 280 is prevented from being absorbed by the conductors 240a and 240b. It can be controlled.

[0395] Although not shown, the upper surface of the conductor 240a and the upper surface of the conductor 240b are in contact with each other to form wiring. The conductor functioning as the wiring may be tungsten, copper, or the like. It is preferable to use a conductive material containing aluminum as a main component. The body may be a laminated structure, for example a laminate of titanium, titanium nitride and the above conductive material. The conductor may be formed so as to be embedded in an opening provided in the insulator.

[0396] <Transistor configuration example 2> 28A, 28B, and 28C show a display device which can be used in one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200B and the periphery of the transistor 200B. Transistor 200B is a modification of transistor 200A.

[0397] FIG. 28A is a top view of the transistor 200B. 8(C) is a cross-sectional view of the transistor 200B. FIG. 2A is a cross-sectional view of a portion indicated by a dashed line B1-B2 in FIG. 2A, showing the channel of a transistor 200B. Also, Fig. 28(C) is a cross-sectional view of the B3-B4 line in Fig. 28(A). FIG. 2 is a cross-sectional view of the area indicated by the line, and is also a cross-sectional view of the transistor 200B in the channel width direction. In the top view of FIG. 28(A), some elements are omitted for clarity. do.

[0398] In the transistor 200B, the conductor 242a and the conductor 242b are formed on the metal oxide 230c. , the insulator 250, and the conductor 260. The transistor 200B can be a transistor with a high on-state current. can be a transistor that is easy to control.

[0399] The conductor 260 functioning as a gate electrode is a conductor 260a and a conductor on the conductor 260a. The conductor 260a is a hydrogen atom, a hydrogen molecule, a water molecule, a copper atom, or the like. It is preferable to use a conductive material that has a function of suppressing the diffusion of impurities. For example, a conductive material having a function of suppressing the diffusion of at least one of oxygen atoms, oxygen molecules, etc. It is preferable to use a

[0400] Since the conductor 260a has a function of suppressing the diffusion of oxygen, the material of the conductor 260b In other words, by having the conductor 260a, the conductor 260 The oxidation of b is suppressed, and the decrease in electrical conductivity can be suppressed.

[0401] In addition, the upper surface and side surface of the conductor 260, the side surface of the insulator 250, and the side surface of the metal oxide 230c It is preferable to provide an insulator 254 so as to cover the surface. It is preferable to use an insulating material that has a function of suppressing the diffusion of impurities such as silicon and oxygen.

[0402] By providing the insulator 254, oxidation of the conductor 260 can be suppressed. By providing the insulator 254, impurities such as water and hydrogen contained in the insulator 280 can be prevented from being absorbed by the transistor 20. It is possible to suppress diffusion to 0B.

[0403] <Transistor configuration example 3> 29A, 29B, and 29C show a display device which can be used in one embodiment of the present invention. 1A and 1B are a top view and a cross-sectional view of a transistor 200C and the periphery of the transistor 200C. Transistor 200C is a modification of transistor 200A.

[0404] FIG. 29A is a top view of the transistor 200C. 29(C) is a cross-sectional view of the transistor 200C. FIG. 2A is a cross-sectional view of the portion indicated by the dashed line C1-C2 in FIG. 2A, showing the channel of the transistor 200C. Also, Fig. 29(C) is a cross-sectional view of the C3-C4 chain in Fig. 29(A). FIG. 2 is a cross-sectional view of the area indicated by the line, and is also a cross-sectional view of the transistor 200C in the channel width direction. In the top view of FIG. 29(A), some elements are omitted for clarity. do.

[0405] The transistor 200C has an insulator 250 on the metal oxide 230c. A metal oxide 252 is provided on the metal oxide 252. A conductor 260 is provided on the metal oxide 252. An insulator 270 is provided on the body 260. Also, an insulator 271 is provided on the insulator 270.

[0406] The metal oxide 252 preferably has a function of suppressing oxygen diffusion. By providing a metal oxide 252 that suppresses the diffusion of oxygen between the conductor 260 and the conductive material, The diffusion of oxygen to the metal oxide 230 is suppressed. In other words, the amount of oxygen supplied to the metal oxide 230 is reduced. In addition, the oxidation of the conductor 260 can be suppressed.

[0407] The metal oxide 252 may function as a part of the gate electrode. The oxide semiconductor that can be used as the metal oxide 230 is used as the metal oxide 252. In this case, the conductor 260 can be formed as a film by a sputtering method. The electrical resistance of oxide 252 can be reduced to make it a conductor. The electrode can be called an e Conductor.

[0408] The metal oxide 252 may also function as part of the gate insulator. Therefore, the insulator 250 is made of a material having high thermal stability, such as silicon oxide or silicon oxynitride. When using a metal oxide 252, a metal oxide that is a high-k material with a high dielectric constant is used. By using such a layered structure, the transistor 200C can be made resistant to heat. Therefore, the transistor can be made stable against the physical film and has a high relative dielectric constant. This makes it possible to reduce the gate potential applied during transistor operation while maintaining the thickness. In addition, it is possible to reduce the equivalent oxide thickness (EOT) of the insulating layer that functions as the gate insulator. .

[0409] In the transistor 200C, the metal oxide 252 is shown as a single layer, but may have a stacked structure of two or more layers. For example, a metal oxide that functions as part of the gate electrode and a gate insulator A metal oxide that functions as a part of the insulating layer may be laminated thereon.

[0410] The transistor 200C includes a metal oxide 252, which serves as a gate voltage. When it functions as a pole, it does not weaken the effect of the electric field from the conductor 260, but The on-state current of the transistor 200C can be improved. In addition, the metal oxide 252 acts as a gate insulator. When the insulator 250 and the metal oxide 252 function as a conductor, the physical thickness of the insulator 250 and the metal oxide 252 The distance between the conductor 260 and the metal oxide 230 can be maintained. The leakage current between the transistor 60 and the metal oxide 230 can be suppressed. The transistor 200C has a laminated structure of an insulator 250 and a metal oxide 252, so that the conductive The physical distance between the conductor 260 and the metal oxide 230 and the distance from the conductor 260 to the metal oxide 230 The electric field strength applied to 30 can be easily adjusted.

[0411] Specifically, the metal oxide 252 may be an oxide semiconductor that can be used for the metal oxide 230. Conductors with low resistance can be used. Or hafnium, aluminum, gallium, etc. tungsten, titanium, tantalum, nickel, gel A metal oxide containing one or more metals selected from the group consisting of arsenic, arsenic, manganese, etc. It can be used.

[0412] In particular, the oxide layer is an insulating layer containing oxides of either or both of aluminum and hafnium. Aluminum, hafnium oxide, oxides containing aluminum and hafnium (hafnium It is preferable to use hafnium aluminate. In particular, hafnium aluminate is preferable because it is more preferable to use hafnium oxide. It has higher heat resistance than aluminum film. Therefore, it is less likely to crystallize during heat treatment in the subsequent process. The metal oxide 252 is not an essential component. Appropriate design may be required depending on the characteristics.

[0413] The insulator 270 has an insulating property that suppresses the permeation of impurities such as water or hydrogen, and oxygen. For example, aluminum oxide or hafnium oxide is preferably used. This prevents the conductor 260 from being oxidized by oxygen from above the insulator 270. In addition, impurities such as water or hydrogen can be prevented from entering the insulator 270 from above. , the conductor 260 and the insulator 250 are interposed between the metal oxide 230 and the metal oxide 230 to suppress the inclusion of the conductor 260 and the insulator 250. It is possible.

[0414] The insulator 271 functions as a hard mask. When processing the conductive material 260, the side of the conductive material 260 is approximately vertical. The angle between the surfaces is between 75 degrees and 100 degrees, preferably between 80 degrees and 95 degrees. can be done.

[0415] The insulator 271 has a function of suppressing the permeation of impurities such as water or hydrogen, and oxygen. By using an insulating material, the insulating layer may also function as a barrier layer. The body 270 may not be provided.

[0416] Using the insulator 271 as a hard mask, the insulator 270, the conductor 260, the metal oxide 2 52, the insulator 250, and a portion of the metal oxide 230c are selectively removed to remove these The side surfaces of the metal oxide 230b can be substantially aligned with each other, and a part of the surface of the metal oxide 230b can be exposed. .

[0417] Also, transistor 200C has region 243a on a portion of the exposed metal oxide 230b surface. and region 243b. Either region 243a or region 243b functions as a source region. The other of the region 243a and the region 243b functions as a drain region.

[0418] The regions 243a and 243b may be formed by, for example, an ion implantation method, an ion doping method, or the like. The exposed metal oxide is then removed using plasma immersion ion implantation or plasma treatment. This can be achieved by introducing impurity elements such as phosphorus or boron into the surface of 230b. In the embodiments, the term "impurity elements" refers to elements other than the main component elements.

[0419] In addition, after exposing a part of the surface of the metal oxide 230b, a metal film is formed and then heat-treated. By carrying out the above, the elements contained in the metal film are diffused into the metal oxide 230b, and the region 2 43a and region 243b may also be formed.

[0420] The region of the metal oxide 230b into which the impurity element is introduced has a reduced electrical resistivity. The regions 243a and 243b may be referred to as "impurity regions" or "low resistance regions." .

[0421] By using the insulator 271 and / or the conductor 260 as a mask, the region 243a and the region The region 243b can be formed in a self-aligned manner. 243a and / or region 243b do not overlap with the conductor 260, reducing parasitic capacitance. In addition, the channel forming region and the source / drain region (region 243a or region 243 No offset region is formed between the regions 243a and 243b. By forming the MOSFET in a self-aligned manner, the on-current is increased, the threshold voltage is reduced, and It is possible to improve the operating frequency, etc.

[0422] The transistor 200C includes an insulator 271, an insulator 270, a conductor 260, a metal oxide 25 2, the insulator 250, and the insulator 272 on the side of the metal oxide 230c. 2 is preferably an insulator with a low relative dielectric constant. For example, silicon oxide, silicon oxynitride, etc. Silicon, silicon oxide nitride, silicon nitride, silicon oxide doped with fluorine, carbon doped silicon oxide doped with carbon and nitrogen, silicon oxide with vacancies, In particular, silicon oxide, silicon oxynitride, silicon nitride oxide, etc. are preferable. When silicon oxide having voids is used for the insulator 272, the insulator 272 can be formed in a later process. In addition, silicon oxide and silicon oxynitride are preferable because they can easily form an excess oxygen region in the silicon oxide. Silicon is preferred because it is thermally stable. Insulator 272 also has the function of diffusing oxygen. It is preferred that the compound has the formula:

[0423] In order to further reduce the off-state current, an off-state A set region may be provided. The offset region is a region having a high electrical resistivity, as described above. The offset region is a region where the dopant element is not introduced. This can be achieved by introducing the above-mentioned impurity element after the formation of the insulator 27. 2 also functions as a mask in the same manner as the insulator 271. In contrast, impurity elements are not introduced into the region overlapping with the insulator 272, and the electrical resistivity of the region is increased. It can be left as it is.

[0424] The transistor 200C also includes an insulator 272 and an insulator 254 on the metal oxide 230. The insulator 254 is preferably formed by sputtering. By using this deposition method, it is possible to form an insulator film with little impurities such as water or hydrogen. do.

[0425] In addition, the oxide film formed by the sputtering method extracts hydrogen from the film-forming structure. Therefore, when the insulator 254 is formed by a sputtering method, the insulator 2 54 absorbs hydrogen and water from the metal oxide 230 and the insulator 272. The hydrogen concentration in the oxide 230 and the insulator 272 can be reduced.

[0426] <Transistor constituent materials> The constituent materials that can be used for the transistor will be described.

[0427] <<Substrate>> The substrate on which the transistor 200 is formed may be, for example, an insulating substrate, a semiconductor substrate, or a conductive substrate. Examples of insulating substrates include glass substrates, quartz substrates, and safa substrates. YBCO substrates, stabilized zirconia substrates (yttria stabilized zirconia substrates, etc.), resin substrates, etc. The semiconductor substrate may be, for example, a semiconductor substrate made of silicon or germanium. are silicon carbide, silicon germanium, gallium arsenide, indium phosphide, zinc oxide, Compound semiconductor substrates made of gallium oxide are also available. A semiconductor substrate having an insulating region, such as SOI (Silicon On Insulator) Conductive substrates include graphite substrates, metal substrates, alloy substrates, conductive resin substrates, etc. Alternatively, there are substrates having a metal nitride, substrates having a metal oxide, and the like. Furthermore, a substrate in which a conductor or semiconductor is provided on an insulating substrate, a substrate in which a conductor or an insulator is provided on a semiconductor substrate, There are substrates provided with an edge, substrates in which a semiconductor or an insulator is provided on a conductive substrate, etc. The substrate may have elements mounted thereon. , a capacitance element, a resistance element, a switch element, a memory element, and the like.

[0428] <<Insulators>> The insulators include oxides, nitrides, oxynitrides, nitride oxides, and metal oxides that have insulating properties. , metal oxide nitrides, metal nitride oxides, etc.

[0429] For example, as transistors become smaller and more highly integrated, the gate insulator becomes thinner, Problems such as leakage current may occur. By using -k materials, it is possible to reduce the voltage required for transistor operation while maintaining the same physical thickness. On the other hand, by using a material with a low relative dielectric constant for the insulator that functions as the interlayer film, It is possible to reduce the parasitic capacitance between the wires. Therefore, the material is selected according to the function of the insulator. It is recommended to select:

[0430] Insulators with high dielectric constants include gallium oxide, hafnium oxide, zirconium oxide, and aluminium. Oxides containing aluminum and hafnium, oxynitrides containing aluminum and hafnium oxides having silicon and hafnium, and oxynitrides having silicon and hafnium hafnium oxides, or nitrides with silicon and hafnium.

[0431] Insulators with low dielectric constants include silicon oxide, silicon oxynitride, and silicon nitride oxide. Silicon nitride, silicon oxide with added fluorine, silicon oxide with added carbon, carbon Examples of the material include silicon oxide to which silicon and nitrogen have been added, silicon oxide having voids, and resin.

[0432] In addition, a transistor including an oxide semiconductor can suppress permeation of impurities such as hydrogen and oxygen. Insulators having a function (insulator 214, insulator 222, insulator 254, insulator 274, etc.) By surrounding the transistor with a metal oxide, the electrical characteristics of the transistor can be stabilized. Examples of insulators that have the function of suppressing the permeation of pure substances and oxygen include boron, carbon, and nitrogen. Argon, oxygen, fluorine, magnesium, aluminum, silicon, phosphorus, chlorine, argon, Lithium, Germanium, Yttrium, Zirconium, Lanthanum, Neodymium, Hafnium A single layer or a multi-layer of an insulator containing hydrogen or tantalum may be used. Aluminum oxide and oxide are used as insulators that suppress the permeation of impurities and oxygen. Magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide metal oxides such as tantalum oxide, lanthanum oxide, neodymium oxide, hafnium oxide, or tantalum oxide; Aluminum nitride, aluminum titanium nitride, titanium nitride, silicon oxynitride, or nitride Metal nitrides such as silicon can be used.

[0433] In addition, the insulator that functions as the gate insulator has a region that contains oxygen that is desorbed by heating. For example, an oxide having a region containing oxygen that is released by heating is preferable. By forming a structure in which silicon oxide or silicon oxynitride is in contact with the metal oxide 230, The oxygen deficiency in the oxide 230 can be compensated for.

[0434] <<Conductors>> Conductive materials include aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, and titanium. Zn, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium nium, zirconium, beryllium, indium, ruthenium, iridium, strontium Metal elements selected from the group consisting of lanthanum, lanthanum, etc., or alloys containing the above-mentioned metal elements, It is preferable to use an alloy of the above metal elements. For example, tantalum nitride, Titanium oxide, tungsten, titanium and aluminum nitride, tantalum and aluminum Nitrides containing ruthenium, ruthenium oxide, ruthenium nitride, and oxides containing strontium and ruthenium. It is preferable to use tantalum nitride, an oxide containing lanthanum and nickel, or the like. , titanium nitride, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum Ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, lanthanum Oxides containing tungsten and nickel are conductive materials that are resistant to oxidation, or that absorb oxygen but remain conductive. It is also preferable to use polycrystalline silicon containing impurity elements such as phosphorus. The material uses semiconductors with high electrical conductivity, such as nickel silicide, This is also fine.

[0435] In addition, a plurality of conductors made of the above materials may be laminated. Alternatively, a laminated structure may be used in which a material containing a metal element and a conductive material containing oxygen are combined. In addition, a laminated structure combining the above-mentioned material containing a metal element and a conductive material containing nitrogen is also available. The above-mentioned metal element-containing material, the conductive material containing oxygen, and the nitrogen A laminated structure in which the conductive material containing the above is combined may also be used.

[0436] In the case where a metal oxide is used for a channel formation region of a transistor, The conductor that functions as the above includes the material containing the metal element, the conductive material containing oxygen, and In this case, it is preferable to use a laminated structure in which the conductive material containing oxygen is It is preferable to provide the conductive material containing oxygen on the channel formation region side. This makes it easier for oxygen released from the conductive material to be supplied to the channel formation region.

[0437] In particular, the metal oxide in which the channel is formed is used as a conductor that functions as a gate electrode. It is preferable to use a conductive material containing the metal element and oxygen. Conductive materials containing silicon and nitrogen may be used. For example, titanium nitride, tantalum nitride, and other nitrides may be used. Conductive materials containing indium tin oxide and tungsten oxide may also be used. Indium oxide containing tungsten oxide, indium zinc oxide containing titanium oxide Indium oxide, indium tin oxide with titanium oxide, indium zinc oxide, silicon Indium tin oxide doped with silicon may also be used. By using such a material, the metal in which the channel is formed can be easily obtained. In some cases, hydrogen contained in metal oxides can be captured, or it can be removed from the outer insulator. In some cases it may be possible to capture the entrained hydrogen.

[0438] <<Metal oxides>> The metal oxide preferably contains at least indium or zinc. In particular, indium In addition to these, aluminum, gallium, yttrium, and zinc are preferably included. It is preferable that thorium, tin, etc. are contained. Also, boron, titanium, iron, nickel, etc. are contained. Ru, Germanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium Contains one or more of the following metals: tungsten, tantalum, magnesium, etc. It may be included.

[0439] Here, the metal oxide is an In-M-Zn oxide having indium, element M, and zinc. Here, the element M is aluminum, gallium, yttrium, or tin. Other elements that can be used for element M include boron, titanium, iron, and nickel. , Germanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Hafnium However, the element M may be any of the elements mentioned above. There are cases where it is acceptable to combine multiple elements.

[0440] In this specification, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met de). It may also be called tetrahydrofuran (tetrahydrofuran) oxynitride.

[0441] [Metal oxide structures] Oxide semiconductors (metal oxides) are classified into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include CAAC-OS and polycrystalline Oxide semiconductor, nc-OS (nanocrystalline oxide semiconductor) conductor, pseudo-amorphous oxide semiconductor (a-like OS) s-like oxide semiconductor, and amorphous oxide semiconductor, etc. There is.

[0442] [impurities] The effect of each impurity in the metal oxide is explained. If alkaline earth metals are included, defect levels may be formed and carriers may be generated. Therefore, a metal oxide containing an alkali metal or an alkaline earth metal is used to form a channel. The transistors used in the metal oxide region tend to be normally-on. It is preferable to reduce the concentration of alkali metals or alkaline earth metals in the Secondary Ion Mass Spectroscopy (SIMS) Concentration of alkali metal or alkaline earth metal in metal oxide obtained by NMR spectrometry , 1×10 18 atoms / cm 3 Less than or equal to 2 x 10 16 atoms / cm 3 To the following:

[0443] In addition, the hydrogen contained in the metal oxide reacts with the oxygen that is bonded to the metal atom to form water. Therefore, hydrogen contained in the metal oxide may cause oxygen vacancies in the metal oxide. When hydrogen enters the oxygen vacancy, electrons, which act as carriers, may be generated. In addition, some of the hydrogen bonds with oxygen, which bonds with metal atoms, to generate electrons, which act as carriers. Therefore, transistors using metal oxides containing hydrogen can be used without any problems. It is likely to become a Marione trait.

[0444] For this reason, it is preferable that the amount of hydrogen in the metal oxide is reduced as much as possible. In the metal oxide, the hydrogen concentration obtained by SIMS is 1×10 20 atoms / cm 3 Less than 1 x 10 19 atoms / cm 3 less than 5×10 18 atoms / cm 3 less than 1×10 18 atoms / cm 3 Less than The metal oxide with sufficiently reduced impurities is used for the channel formation region of the transistor. This makes it possible for the transistor to have stable electrical characteristics.

[0445] It is preferable to use a thin film having high crystallinity as the metal oxide used as the semiconductor of a transistor. By using the thin film, the stability or reliability of the transistor can be improved. The thin film can be, for example, a thin film of a single crystal metal oxide or a thin film of a polycrystalline metal oxide. However, a thin film of a single crystal metal oxide or a thin film of a polycrystalline metal oxide is To form the film on the substrate, a high temperature or laser heating process is required. This increases the cost of the system and reduces the throughput.

[0446] The configuration examples exemplified in this embodiment and the corresponding drawings, etc., are at least partially It can be implemented in appropriate combination with other configuration examples or drawings, etc.

[0447] This embodiment may be appropriately combined with at least a part of other embodiments described in this specification. It can be implemented together.

[0448] (Embodiment 3) In this embodiment, an electronic device including a display device which is one embodiment of the present invention will be described.

[0449] FIG. 30(A) shows the appearance of the camera 8000 with the viewfinder 8100 attached. The camera 8000 is provided with an imaging device. In FIG. 30(A), the camera 8000 and the file The camera 8100 and the underwater 8100 are separate electronic devices that can be detached. A finder equipped with a display device may be built into the housing 8001 of the camera 000.

[0450] The camera 8000 includes a housing 8001, a display unit 8002, operation buttons 8003, and a shutter button. The camera 8000 has a detachable lens 8006. It is being done.

[0451] In this example, a camera 8000 is used, and a lens 8006 is removed from a housing 8001 and replaced. However, the lens 8006 and the housing may be integrated together.

[0452] The camera 8000 can capture an image by pressing the shutter button 8004. In addition, the display unit 8002 has a function as a touch panel. It is also possible to capture an image by

[0453] The housing 8001 of the camera 8000 has a mount having electrodes, and a finder 8100 In addition, a strobe device, etc. can be connected.

[0454] The finder 8100 includes a housing 8101, a display portion 8102, a button 8103, and the like. The viewfinder 8100 can be an electronic viewfinder.

[0455] The housing 8101 has a mount that engages with the mount of the camera 8000, The mount can be attached to the camera 8000. The mount can also include electrodes. and displays images and the like received from a camera 8000 via the electrodes on a display unit 8102. It is possible.

[0456] The button 8103 functions as a power button. The display of 102 can be switched on and off.

[0457] The display unit 8002 of the camera 8000 and the display unit 8102 of the finder 8100 are The display device of one embodiment of the present invention can be applied to a highly accurate display device. Because of its high fineness, even if the user is close to the display unit 8002 or 8102, The pixels are not visible to the user, and a more realistic image is displayed on the display unit 8002 or the display unit In particular, the display unit 81 provided in the viewfinder 8100 can display the The image displayed on the 02 changes as the user brings their eye closer to the eyepiece of the Finder 8100. Since the display is more visible, the distance between the user and the display unit 8102 becomes very close. In particular, it is preferable to use the display device of one embodiment of the present invention for the display portion 8102. In the case where the display device of one embodiment of the present invention is applied to the display portion 8102, The resolution of the images that can be captured can be 4K, 5K or higher.

[0458] The resolution of the image that can be captured by the imaging device provided in the camera 8000 is set by the display unit 8 002 or the display unit 8102 can display an image with a resolution equal to or greater than that of the image. For example, if the display unit 8102 can display an image with a resolution of 4K, the camera 8 It is preferable to provide an imaging device capable of capturing images of 4K or higher in the 1000. If the display unit 8102 can display an image with a resolution of 5K, the camera 8000 must have a resolution of 5K or more. It is preferable to provide an imaging device capable of capturing the above image.

[0459] FIG. 30B is a diagram showing the external appearance of the head mounted display 8200.

[0460] The head mounted display 8200 includes a mounting part 8201, a lens 8202, and a main body 820. 3, a display unit 8204, a cable 8205, etc. It has a built-in Teri 8206.

[0461] A cable 8205 supplies power from a battery 8206 to the main body 8203. 3 is equipped with a wireless receiver and the like, and displays an image corresponding to the received image data on a display unit 8204. In addition, the camera installed in the main body 8203 can capture the image of the user's eyeballs and eyelids. By capturing the user's movements and calculating the coordinates of the user's line of sight based on that information, can be used as an input means.

[0462] Furthermore, the mounting unit 8201 may be provided with a plurality of electrodes at positions that come into contact with the user. The main body 8203 detects the current flowing through the electrodes in response to the movement of the user's eyeball, The device may have a function of detecting the line of sight of the user. In this way, the mounting unit 8201 may have a function of monitoring the pulse of the user. The sensor may have various sensors such as a temperature sensor, a pressure sensor, and an acceleration sensor. The display unit 8204 may have a function of displaying the user's biological information. The image displayed on the display unit 8204 may be changed according to the detected movement. stomach.

[0463] The display device of one embodiment of the present invention can be applied to the display portion 8204. The frame of the head-mounted display 8200 is narrowed, and high-quality images are displayed on the display unit 8204. This makes it possible to display highly realistic images.

[0464] 30(C), (D), and (E) are diagrams showing the appearance of the head mounted display 8300. The head mounted display 8300 includes a housing 8301, a display unit 8302, and It has a band-shaped fixture 8304 and a pair of lenses 8305.

[0465] The user can view the display on the display unit 8302 through the lens 8305. It is preferable to arrange the display portion 8302 in a curved manner. By doing so, the user can feel a high sense of realism. Although the above embodiment illustrates a configuration in which one display unit 8302 is provided, the present invention is not limited to this. For example, In this case, one display unit is provided for each eye of the user. If the display is configured so that the display section is arranged in the same way, it will be possible to perform 3D display using parallax. .

[0466] Note that the display device of one embodiment of the present invention can be applied to the display portion 8302. Since the display device of one embodiment has extremely high definition, the lens 8305 is provided as shown in FIG. Even if the image is enlarged using a 3D effect, the pixels are not visible to the user, creating a more realistic image. It can be displayed.

[0467] Next, an example of an electronic device different from the electronic devices shown in FIG. 30(A) to FIG. 30(E) will be described with reference to FIG. Shown in Figures 31(A) to 31(G).

[0468] The electronic device shown in FIG. 31A to FIG. 31G includes a housing 9000, a display portion 9001, a speaker A center 9003, an operation key 9005 (including a power switch or an operation switch), and a connection terminal 9006, Sensor 9007 (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light , liquid, magnetic, temperature, chemical, sound, time, hardness, electric field, current, voltage, power, radiation, flow (including functions to measure volume, humidity, gradient, vibration, odor, or infrared rays), 9008, etc.

[0469] The electronic devices shown in FIGS. 31A to 31G have various functions. Functions for displaying information (still images, videos, text images, etc.) on the display unit, touch panel function, Rendering, date, or time display functions, and various software (programs) Functions for controlling processing, wireless communication functions, and various computer networks using wireless communication functions A function to connect to a network, a function to transmit or receive various data using wireless communication functions, A function to read out a program or data recorded on a recording medium and display it on the display unit, etc. Note that the electronic devices shown in FIGS. The functions that can be used are not limited to these, and various functions can be provided. Although not shown in FIGS. 31A to 31G, the electronic device may have a structure having multiple display units. The electronic device may be provided with a camera or the like to take still images and a video. The camera has the function of taking pictures, storing the pictures on a recording medium (external or built-in to the camera), The image processing device may have a function of displaying the image on a display unit.

[0470] The electronic devices shown in FIGS. 31A to 31G will be described in detail below.

[0471] FIG. 31A is a perspective view showing a television device 9100. 00 is equipped with a display unit 9001 having a large screen, for example, 50 inches or more or 100 inches or more. It is possible to incorporate this.

[0472] The display device of one embodiment of the present invention is applied to a display portion 9001 of a television set 9100. This allows the television device 9100 to have a narrow frame, and the display unit 900 1, it is possible to display high quality images and highly realistic images.

[0473] FIG. 31B is a perspective view showing a portable information terminal 9101. The portable information terminal 9101 is For example, it has one or more functions selected from a telephone, a notebook, an information viewing device, etc. Specifically, the mobile information terminal 9101 can be used as a smartphone. A speaker 9003, a connection terminal 9006, a sensor 9007, etc. may be provided. The information terminal 9101 can display text and images on multiple sides. For example, An operation button 9050 (also called an operation icon or simply an icon) is In addition, information 9051 shown in a dashed rectangle can be displayed on the display unit 9001. It should be noted that, as an example of information 9051, e-mail and SNS (Social Networking Services) and displays to notify you of incoming calls, e-mails, etc. the subject of the email or SNS, the sender's name of the email or SNS, the date and time, the battery level, The strength of the antenna reception, etc. Or, the information 905 is displayed at the position where the information 9051 is displayed. Instead of 1, an operation button 9050 or the like may be displayed.

[0474] The display device of one embodiment of the present invention is applied to a display portion 9001 included in a portable information terminal 9101. This allows the portable information terminal 9101 to be miniaturized and allows a high-quality image to be displayed on the display portion 9001. Thus, it is possible to display an image with a high sense of realism.

[0475] FIG. 31C is a perspective view showing a portable information terminal 9102. The portable information terminal 9102 is The display unit 9001 has a function of displaying information on three or more screens. In the example shown, information 9053 and information 9054 are displayed on different sides. The user of the information terminal 9102 holds the mobile information terminal 9102 in the breast pocket of the clothes. You can check the display (information 9053 in this case) by A position where the telephone number or name of the caller can be observed from above the mobile information terminal 9102 The user can view the display without taking the mobile information terminal 9102 out of his / her pocket. You can then check and decide whether or not to accept the call.

[0476] The display device of one embodiment of the present invention is applied to a display portion 9001 included in a portable information terminal 9102. This allows the portable information terminal 9101 to be miniaturized and allows a high-quality image to be displayed on the display portion 9001. Thus, it is possible to display an image with a high sense of realism.

[0477] FIG. 31D is a perspective view showing a wristwatch-type portable information terminal 9200. 200 is for mobile phone, e-mail, document viewing and writing, music playback, internet communication, It is possible to execute various applications such as computer games. The display surface of the display device 9001 is curved, and the display can be performed along the curved display surface. In addition, the portable information terminal 9200 can perform short-distance wireless communication according to a communication standard. For example, by communicating with a wireless headset, The mobile information terminal 9200 also has a connection terminal 9006. It is possible to directly exchange data with other information terminals via the connector. Charging can also be performed through the connection terminal 9006. Alternatively, power may be supplied wirelessly without using a power supply.

[0478] The display device of one embodiment of the present invention is applied to a display portion 9001 included in a portable information terminal 9200. This allows the frame of the portable information terminal 9200 to be narrowed, and the display portion 9001 can be made high quality. Therefore, it is possible to display an image with a high sense of realism.

[0479] 31(E), (F), and (G) are perspective views showing a foldable portable information terminal 9201. FIG. 31E is a perspective view of the portable information terminal 9201 in an unfolded state, and FIG. 1(F) changes the portable information terminal 9201 from one of the unfolded state and the folded state to the other. FIG. 31(G) is a perspective view of the portable information terminal 9201 in a folded state. The portable information terminal 9201 is highly portable when folded and is unfolded. When the display is turned on, the seamless, wide display area provides excellent visibility of the display. The display unit 9001 of the display device 9001 is made up of three housings 9000 connected by hinges 9055. The two housings 9000 are supported by the hinge 9055. The portable information terminal 9201 can be reversibly transformed from an unfolded state to a folded state. For example, the portable information terminal 9201 can be bent with a radius of curvature of 1 mm or more and 150 mm or less. It can be done.

[0480] The display device of one embodiment of the present invention is applied to a display portion 9001 included in a portable information terminal 9201. This allows the frame of the portable information terminal 9201 to be narrowed, and the display portion 9001 can be made high quality. Therefore, it is possible to display an image with a high sense of realism.

[0481] The configuration examples exemplified in this embodiment and the corresponding drawings, etc., are at least partially It can be implemented in appropriate combination with other configuration examples or drawings, etc.

[0482] This embodiment may be appropriately combined with at least a part of other embodiments described in this specification. It can be implemented together. EXAMPLES

[0483] In this embodiment, the drain current-drain current of a transistor provided in a pixel of a display device is The results of measuring the on-voltage characteristics (Id-Vd characteristics) are explained below.

[0484] In this embodiment, a transistor 554 is provided in the pixel having the configuration shown in FIG. The Id-Vd characteristics of the transistors were measured. Table 1 shows the Id-Vg characteristics of the transistors in this example. This is the specification of the display device in which the transistor to be measured is provided.

[0485] [Table 1]

[0486] FIG. 32 shows the results of measuring the Id-Vd characteristics of a transistor. The gate voltage (Vg) applied to the transistor is set to 1.0V, 1.5V, and 2.0V. As shown in Figure 32, the transistor It was confirmed that the cations had saturation properties. EXAMPLES

[0487] In this embodiment, a cross section of a transistor provided in a display device 10 having the configuration shown in FIG. Scanning Transmission Electron Microscope (STEM) The results of measurements using a MOSFET and the drain of the transistor The results of measuring the gate current-gate voltage characteristics (Id-Vg characteristics) are described below.

[0488] FIG. 33 is a diagram showing the configuration of a pixel 34 provided in the display device 10 according to the present embodiment. The element 34 includes a transistor M1, a transistor M2, a transistor M3, and a transistor The pixel circuit includes a capacitor M4, a capacitive element C1, a capacitive element C2, and a light-emitting element EL.

[0489] One of the source and drain of the transistor M1 is electrically connected to one electrode of the capacitance element C1. The other electrode of the capacitance element C1 is connected to the source or drain of the transistor M2. One of the source and drain of the transistor M2 is electrically connected to The gate of the transistor M3 is electrically connected to the The other electrode of the capacitance element C2 is electrically connected to the transistor. The source or drain of the transistor M3 is electrically connected to the Either the source or the drain of the transistor M1 is electrically connected to either the source or the drain of the transistor M2. One of the source and drain of the transistor M4 is connected to the anode of the light-emitting element EL. The power supply is electrically connected to the power supply.

[0490] The gate of the transistor M1 and the gate of the transistor M4 function as a scan line. The gate of the transistor M2 is electrically connected to a wiring 31_1 that serves as a scan line. The source or drain of the transistor M1 is electrically connected to the wiring 31_2 having the function of The other of the drains is electrically connected to a wiring 32_1 having a function as a data line. The other of the source and drain of the transistor M2 functions as a data line. The other of the source and drain of the transistor M3 is electrically connected to the wiring 32_2. is the potential V H The source or drain of the transistor M4 is electrically connected to the wiring that supplies the The other drain is at potential V com The light emitting element is electrically connected to a wiring that supplies the light. The cathode of the EL element is at potential V L The power supply 11 is electrically connected to a wiring that supplies the power supply voltage Vcc.

[0491] The transistors M1 to M4 each have a back gate in addition to a gate. In the transistors M1, M2, and M4, the back gates are The back gate of the transistor M3 is electrically connected to the 3. The transistor is electrically connected to either the source or drain of the transistor.

[0492] Regarding the transistors M1, M2, and M4, the channel lengths (L The channel width (W) was 360 nm. The channel length (L) was set to 1000 nm, and the channel width was set to 360 nm. The capacitance of the capacitive element C1 was set to 36 fF, and the capacitance of the capacitive element C2 was set to 33 fF.

[0493] Table 2 shows the cross-sections of the transistors in this embodiment, and the Id-Vg characteristics of the transistors are measured. , are the specifications of the display device 10.

[0494] [Table 2]

[0495] FIG. 34 is a STEM image showing a cross section of a transistor. As shown in FIG. It was confirmed that transistors could be formed in a stacked manner.

[0496] FIG. 35A shows the measurement results of the Id-Vg characteristics of the transistor provided in the lower layer. 35(B) shows the measurement results of the Id-Vg characteristics of the transistor provided in the upper layer. The channel length (L) of the transistor for which the Id-Vg characteristics were measured was 360 nm, and the channel width The width (W) was set to 360 nm. The drain voltage (Vd) applied to the transistors was 0.1 V and 3.3 V, respectively. The name was V.

[0497] As shown in FIGS. 35A and 35B, the OS transistor in the layer 20 and the The off-state current of each of the OS transistors provided in the It was confirmed that the flow was below the detection limit. [Explanation of symbols]

[0498] 10: display device, 20: layer, 21: gate driver circuit, 21a: gate driver circuit, 21b: gate driver circuit, 22: source driver circuit, 23: region, 23a: region, 23b: area, 24: demultiplexer circuit, 30: layer, 31: wiring, 31-1: wiring, 31-2: wiring, 31_1: wiring, 31_2: wiring, 31a: wiring, 31b: wiring, 32 :Wiring, 32-1:Wiring, 32-2:Wiring, 32_1:Wiring, 32_2:Wiring, 33:Table display unit, 34: pixel, 35: wiring, 35a: wiring, 35b: wiring, 40: circuit, 41: receiver circuit, 42: serial-to-parallel conversion circuit, 43: buffer circuit, 44: shift register circuit 45: latch circuit; 46: DA conversion circuit; 46a: potential generation circuit; 46b: path transformer transistor logic circuit, 47: amplifier circuit, 48: resistor element, 49: pass transistor, 51: transistor, 52: transistor, 53: transistor, 54: transistor, 55: transistor, 56: transistor, 57: transistor, 58: transistor, 59: transistor, 60: transistor, 61: transistor, 62: transistor, 63: transistor, 64: capacitance element, 65: capacitance element, 66: capacitance element, 67: source Follower circuit, 70: area, 71: transistor, 72: transistor, 73: dummy Transistor, 110: channel forming region, 111: source region, 112: drain region, 113: gate electrode, 114: opening, 115: wiring, 116: opening, 117: wiring, 118: Opening, 119: Opening, 120: Opening, 121: Wiring, 122: Wiring, 12 3: wiring, 130: channel formation region, 131: source region, 132: drain region, 1 33: gate electrode, 134: opening, 135: wiring, 136: opening, 137: wiring, 1 38: Opening, 139: Opening, 140: Opening, 141: Wiring, 142: Wiring, 143 : wiring, 151: semiconductor, 152: conductor, 200: transistor, 200A: transistor 200B: transistor, 200C: transistor, 205: conductor, 214: insulator Insulator, 216: Insulator, 222: Insulator, 224: Insulator, 230: Metal oxide, 230 a: metal oxide, 230b: metal oxide, 230c: metal oxide, 240: conductor, 24 0a: conductor, 240b: conductor, 241: insulator, 241a: insulator, 241b: insulator body, 242: conductor, 242a: conductor, 242b: conductor, 243a: region, 243b : Region, 244: Insulator, 250: Insulator, 252: Metal oxide, 254: Insulator, 26 0: conductor, 260a: conductor, 260b: conductor, 270: insulator, 271: insulator, 272: insulator, 274: insulator, 280: insulator, 281: insulator, 301a: conductor , 301b: conductor, 305: conductor, 311: conductor, 313: conductor, 317: conductor body, 321: lower electrode, 323: insulator, 325: upper electrode, 331: conductor, 333: Conductor, 335: Conductor, 337: Conductor, 341: Conductor, 343: Conductor, 347: Conductor, 351: Conductor, 353: Conductor, 355: Conductor, 357: Conductor, 361: Insulator, 363: insulator, 401: circuit, 403: element isolation layer, 405: insulator, 407 : Insulator, 409: Insulator, 411: Insulator, 413: Insulator, 415: Insulator, 417 : insulator, 419: insulator, 421: insulator, 441: transistor, 443: conductor, 445: insulator, 447: semiconductor region, 449a: low resistance region, 449b: low resistance region, 451: conductor, 453: conductor, 455: conductor, 457: conductor, 459: conductor, 461: conductor, 463: conductor, 465: conductor, 467: conductor, 469: conductor, 471: conductor, 501: insulator, 503: insulator, 505: insulator, 507: insulator, 509: insulator, 511: transistor, 513: transistor, 515: capacitive element, 5 17: Capacitor element, 519: Liquid crystal element, 520: Circuit, 521: Transistor, 523: Emitter Optical element, 525: transistor, 527: transistor, 531: wiring, 533: wiring, 535:Wiring, 537:Wiring, 539:Wiring, 541:Wiring, 543:Wiring, 545:Wiring Line, 550: transistor, 552: transistor, 554: transistor, 560: capacitor 562: Capacitor element, 570: Liquid crystal element, 572: Light emitting element, 601: Transistor 602: transistor; 603: transistor; 613: insulator; 614: insulator; 616: insulator, 622: insulator, 624: insulator, 644: insulator, 654: insulator, 674: insulator, 680: insulator, 681: insulator, 701: substrate, 705: substrate, 71 2: sealing material, 716: FPC, 721: hole injection layer, 722: hole transport layer, 723: light emitting layer Optical layer, 724: electron transport layer, 725: electron injection layer, 730: insulator, 732: sealing layer, 7 34: insulator, 736: colored layer, 738: light shielding layer, 750: transistor, 760: connection Electrode, 772: conductor, 774: conductor, 775: liquid crystal element, 776: liquid crystal layer, 778: Structure, 780: anisotropic conductor, 782: light-emitting element, 786: EL layer, 786a: EL layer , 786b: EL layer, 786c: EL layer, 788: conductor, 790: capacitive element, 792: Charge generating layer, 8000: camera, 8001: housing, 8002: display unit, 8003: operation button Tan, 8004: Shutter button, 8006: Lens, 8100: Viewfinder, 81 01: Housing, 8102: Display, 8103: Buttons, 8200: Head-mounted display Ray, 8201: Mounting part, 8202: Lens, 8203: Main body, 8204: Display part, 82 05: Cable, 8206: Battery, 8300: Head-mounted display, 830 1: Housing, 8302: Display unit, 8304: Fixture, 8305: Lens, 9000: Housing, 9001: display unit, 9003: speaker, 9005: operation keys, 9006: connection terminal, 9 007: sensor, 9008: microphone, 9050: operation button, 9051: information, 9052: Information, 9053: Information, 9054: Information, 9055: Hinge, 9100: Tele Vision device, 9101: portable information terminal, 9102: portable information terminal, 9200: portable information Terminal, 9201: Portable information terminal

Claims

1. A display device including a first layer and a second layer stacked thereon, the first layer includes a gate driver circuit, a first source driver circuit, a second source driver circuit, a third source driver circuit, a fourth source driver circuit, and a fifth source driver circuit; the second layer has a first display portion, a second display portion, a third display portion, a fourth display portion, and a fifth display portion; The first display unit has first pixels arranged in a matrix, The second display unit has second pixels arranged in a matrix, The third display unit has third pixels arranged in a matrix, The fourth display unit has fourth pixels arranged in a matrix, The fifth display unit has fifth pixels arranged in a matrix, the gate driver circuit and the first source driver circuit have an area overlapping with the first pixel, the second source driver circuit has an area overlapping with the second pixel, the third source driver circuit has an area overlapping with the third pixel, the fourth source driver circuit has an area overlapping with the fourth pixel, the fifth source driver circuit has an area overlapping with the fifth pixel, 2. A display device comprising: a gate driver circuit having an area overlapping with the first source driver circuit;

2. In claim 1, The display device has a DA conversion circuit, the DA converter circuit includes a potential generating circuit, a first pass transistor logic circuit, a second pass transistor logic circuit, a third pass transistor logic circuit, a fourth pass transistor logic circuit, and a fifth pass transistor logic circuit; the potential generating circuit is provided outside the first to fifth source driver circuits; the first pass transistor logic circuit is provided in the first source driver circuit; the second pass transistor logic circuit is provided in the second source driver circuit; the third pass transistor logic circuit is provided in the third source driver circuit; the fourth pass transistor logic circuit is provided in the fourth source driver circuit; the fifth pass transistor logic circuit is provided in the fifth source driver circuit, the potential generating circuit has a function of generating a plurality of potentials having different magnitudes; A display device characterized in that the first to fifth pass transistor logic circuits have a function of receiving image data and outputting one of the potentials generated by the potential generating circuit based on the digital value of the image data.

3. In claim 1 or 2, the first to fifth pixels each include a transistor having a metal oxide in a channel formation region; The display device, wherein the metal oxide comprises an element M (M is Al, Ga, Y, or Sn) and Zn.

4. In claim 1 or 2, the first to fifth pixels each include a transistor having a metal oxide in a channel formation region; The display device, wherein the metal oxide comprises indium oxide.

Images