Substrate processing apparatus

Abstract

To improve the dimensional stability of resist patterns using metal-containing resists.SOLUTION: A substrate processing apparatus includes a film formation processing unit that forms a metal-containing resist film on a substrate, a heat treatment unit that heats the substrate on which the film is formed and the film is exposed to light, a development processing unit that develops the film on the heat-treated substrate, and an adjustment control unit that reduces the difference between substrates in the amount of moisture that reacts during heat treatment in the film formed on the substrate.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a storage medium. [Background technology]

[0002] Patent Document 1 discloses a substrate processing apparatus that forms a resist pattern using a chemically amplified resist. In this substrate processing apparatus, a control unit makes the substrate wait in a waiting unit so that the time from the end of exposure in the exposure device until the start of post-exposure bake processing in the post-exposure bake unit is constant for each substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2008-130857 A Summary of the Invention [Problem to be solved by the invention]

[0004] In some cases, a metal-containing resist is used instead of the chemically amplified resist. The present disclosure provides a substrate processing apparatus, a substrate processing method, and a storage medium that are effective in improving the dimensional stability of a resist pattern using a metal-containing resist. [Means for solving the problem]

[0005] The substrate processing apparatus includes a film forming processing section that forms a coating of a metal-containing resist on a substrate, a heat processing section that heats the substrate on which the coating has been formed and on which an exposure process has been performed, a development processing section that develops the coating on the substrate that has been subjected to the heat process, and an adjustment control section that reduces the difference between substrates in the amount of moisture that reacts during the heat process in the coating formed on the substrate. Effect of the Invention

[0006] According to the present disclosure, there are provided a substrate processing apparatus, a substrate processing method, and a storage medium that are effective in improving the dimensional stability of a resist pattern using a metal-containing resist. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating a schematic configuration of a substrate processing system according to a first embodiment. [Diagram 2] FIG. 2 is a schematic view illustrating the internal configuration of the substrate processing apparatus according to the first embodiment. [Diagram 3] Fig. 3(a) is a schematic diagram showing an example of a substrate accommodating unit, and Fig. 3(b) is a schematic diagram showing an example of a dewatering unit. [Figure 4] FIG. 4 is a functional block diagram illustrating an example of a functional configuration of the control device. [Diagram 5] FIG. 5 is a block diagram illustrating an example of a hardware configuration of the control device. [Figure 6] FIG. 6 is a flow chart showing an example of a procedure for adjusting the moisture content. [Figure 7] FIG. 7 is a flow chart showing another example of the procedure for adjusting the moisture content. [Figure 8] FIG. 8 is a flow chart showing an example of a procedure for adjusting the amount of reacted water in the substrate processing system according to the second embodiment. [Figure 9] FIG. 9 is a flowchart showing an example of a procedure for adjusting the moisture content in the substrate processing system according to the third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Various exemplary embodiments will be described below. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and duplicated description will be omitted.

[0009] [First embodiment] First, a substrate processing system according to a first embodiment will be described with reference to FIGS.

[0010] [Substrate processing system] The substrate processing system 1 is a system that forms a photosensitive film on a substrate, exposes the photosensitive film, and develops the photosensitive film. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive film is, for example, a resist film. The substrate processing system 1 includes a coating / developing apparatus 2 and an exposure apparatus 3. The exposure apparatus 3 is an exposure processing apparatus that exposes a resist film (photosensitive film) formed on a wafer W (substrate). The internal space of the exposure apparatus 3 is, for example, kept in a substantially vacuum state. Specifically, the exposure apparatus 3 irradiates an energy beam onto an exposure target portion of the resist film by a method such as liquid immersion exposure. The coating / developing apparatus 2 performs a process of forming a resist film by applying a resist (chemical solution) to the surface of the wafer W (substrate) before the exposure processing by the exposure apparatus 3, and performs a development process of the resist film after the exposure processing. The substrate processing system 1 forms a metal-containing resist coating using a resist containing metal (hereinafter referred to as a "metal-containing resist"). For example, the substrate processing system 1 may form the coating using a resist containing a metal oxide.

[0011] [Substrate processing equipment] Hereinafter, a configuration of a coating / developing apparatus 2 will be described as an example of a substrate processing apparatus. As shown in Fig. 1 and Fig. 2, the coating / developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, a humidity adjustment mechanism 7, and a control device 100 (adjustment control unit).

[0012] The carrier block 4 introduces wafers W into the coating and developing apparatus 2 and removes wafers W from the coating and developing apparatus 2. For example, the carrier block 4 can support a plurality of carriers C for wafers W, and has a built-in transfer device A1 including a delivery arm. The carrier C accommodates a plurality of circular wafers W, for example. The transfer device A1 removes wafers W from the carrier C and delivers them to the processing block 5, and receives wafers W from the processing block 5 and returns them to the carrier C. The processing block 5 has a plurality of processing modules 11, 12, 13, and 14.

[0013] The processing module 11 incorporates a coating unit U1, a heat treatment unit U2, and a transfer device A3 that transfers the wafer W to these units. The processing module 11 forms an underlayer film on the surface of the wafer W using the coating unit U1 and the heat treatment unit U2. The coating unit U1 applies a treatment liquid for forming the underlayer film onto the wafer W. The heat treatment unit U2 performs various heat treatments associated with the formation of the underlayer film.

[0014] The processing module 12 (film forming processing section) incorporates a coating unit U3, a heat treatment unit U4, and a transport device A3 that transports the wafer W to these units. The processing module 12 forms a metal-containing resist coating on the underlayer film using the coating unit U3 and the heat treatment unit U4. The coating unit U3 applies the metal-containing resist onto the underlayer film as a processing liquid for forming the coating. The heat treatment unit U4 performs various heat treatments associated with the formation of the coating. As a result, a metal-containing resist coating is formed on the surface of the wafer W.

[0015] The processing module 13 incorporates a coating unit U5, a heat treatment unit U6, and a transfer device A3 that transfers the wafer W to these units. The processing module 13 forms an upper layer film on the resist film using the coating unit U5 and the heat treatment unit U6. The coating unit U5 applies a liquid for forming the upper layer film onto the resist film. The heat treatment unit U6 performs various heat treatments associated with the formation of the upper layer film.

[0016] The processing module 14 incorporates a developing unit U7 (development processing section), a heat treatment unit U8 (heat treatment section), and a transport device A3 that transports the wafer W to these units. The processing module 14 performs development processing of the coating that has been subjected to the exposure processing and heat processing associated with the development processing by the developing unit U7 and the heat treatment unit U8. As a result, a resist pattern using a metal-containing resist is formed on the surface of the wafer W. The developing unit U7 applies a developer onto the surface of the exposed wafer W, and then washes it away with a rinse liquid to perform development processing of the coating of the metal-containing resist. The heat treatment unit U8 performs various heat treatments associated with the development processing. Specific examples of the heat treatment include a heat treatment before the development processing (PEB: Post Exposure Bake) and a heat treatment after the development processing (PB: Post Bake). The developing unit U7 performs development processing of the wafer W that has been subjected to the heat treatment (PEB) by the heat treatment unit U8. Hereinafter, unless otherwise specified, the heat treatment in the heat treatment unit U8 will be described as a "heat treatment before the development processing (PEB)". Additionally, a metal-containing resist coating will simply be described as a "coating."

[0017] A shelf unit U10 is provided on the carrier block 4 side within the processing block 5. The shelf unit U10 is divided into multiple cells arranged in the vertical direction. A transfer device A7 including a lifting arm is provided near the shelf unit U10. The transfer device A7 raises and lowers the wafer W between the cells of the shelf unit U10.

[0018] A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is partitioned into a plurality of cells arranged in the vertical direction.

[0019] The interface block 6 transfers the wafer W to and from the exposure apparatus 3. For example, the interface block 6 has a built-in transfer device A8 including a transfer arm, and is connected to the exposure apparatus 3. The transfer device A8 transfers the wafer W placed on the shelf unit U11 to the exposure apparatus 3 via the humidity adjustment mechanism 7. The transfer device A8 receives the wafer W from the exposure apparatus 3 and returns it to the shelf unit U11 via the humidity adjustment mechanism 7.

[0020] The humidity adjustment mechanism 7 is a mechanism configured to adjust the amount of moisture contained in a coating formed on the surface of the wafer W (hereinafter referred to as "moisture content"). Adjustment of the moisture content of the coating includes at least one of increasing the moisture content, decreasing the moisture content, and suppressing fluctuations in the moisture content. For example, the humidity adjustment mechanism 7 is provided in the interface block 6. The humidity adjustment mechanism 7 includes a substrate accommodating unit 20 (substrate accommodating section) and a dehydration unit 30 (dehydration section). The substrate accommodating unit 20 is configured to accommodate a plurality of wafers W and suppress changes in the moisture content of the coating on the accommodated wafers W. The dehydration unit 30 is configured to accommodate one or a plurality of wafers W and reduce the moisture content of the coating on the accommodated wafers W. An example of these configurations will be described later.

[0021] The control device 100 controls the coating and developing device 2 to perform the coating and developing process, for example, in the following manner: First, the control device 100 controls the transfer device A1 to transfer the wafer W in the carrier C to the shelf unit U10, and then controls the transfer device A7 to place the wafer W in a cell for the processing module 11.

[0022] Next, the controller 100 controls the transfer device A3 to transfer the wafer W from the shelf unit U10 to the coating unit U1 and heat treatment unit U2 in the processing module 11. The controller 100 also controls the coating unit U1 and heat treatment unit U2 to form an underlayer film on the surface of the wafer W. Thereafter, the controller 100 controls the transfer device A3 to return the wafer W on which the underlayer film has been formed to the shelf unit U10, and controls the transfer device A7 to place the wafer W in a cell for the processing module 12.

[0023] Next, the controller 100 controls the transfer device A3 to transfer the wafer W from the shelf unit U10 to the coating unit U3 and heat treatment unit U4 in the processing module 12. The controller 100 also controls the coating unit U3 and heat treatment unit U4 to form a metal-containing resist coating on the underlying film of the wafer W. Thereafter, the controller 100 controls the transfer device A3 to return the wafer W to the shelf unit U10, and controls the transfer device A7 to place the wafer W in a cell for the processing module 13.

[0024] Next, the controller 100 controls the transfer device A3 to transfer the wafer W on the shelf unit U10 to each unit in the processing module 13. The controller 100 also controls the coating unit U5 and the heat treatment unit U6 to form an upper layer film on the coating film on the wafer W. Thereafter, the controller 100 controls the transfer device A3 to transfer the wafer W to the shelf unit U11.

[0025] Next, the controller 100 controls the transfer device A8 to load the wafer W from the shelf unit U11 into the substrate accommodating unit 20 and send the wafer W accommodated in the substrate accommodating unit 20 to the exposure device 3. Thereafter, the controller 100 controls the transfer device A8 to receive the wafer W that has been subjected to the exposure process from the exposure device 3 and load it into the spinning unit 30. Then, the controller 100 controls the transfer device A8 to place the wafer W in the spinning unit 30 in a cell for the processing module 14 in the shelf unit U11.

[0026] Next, the control device 100 controls the transfer device A3 to transfer the wafer W from the shelf unit U11 to the heat treatment unit U8 in the processing module 14. Then, the control device 100 controls the heat treatment unit U8 to perform a heat treatment on the coating on the wafer W. Next, the control device 100 controls the development unit U7 and the heat treatment unit U8 to perform a development process and a heat treatment after the development process on the coating on the wafer W that has been heat-treated by the heat treatment unit U8. Thereafter, the control device 100 controls the transfer device A3 to return the wafer W to the shelf unit U10, and controls the transfer device A7 and the transfer device A1 to return the wafer W into the carrier C. This completes the coating and developing process.

[0027] The specific configuration of the substrate processing apparatus is not limited to the configuration of the coating / developing apparatus 2 exemplified above. The substrate processing apparatus may be any type as long as it includes a unit for performing a film formation process to form a metal-containing resist film, a heat treatment unit for heat treating the film after exposure processing, a developing unit for developing the film, and a control device capable of controlling these. Each unit of the humidity adjustment mechanism 7 may be provided in the carrier block 4 or the processing modules 11, 12, 13, and 14.

[0028] (humidity control mechanism) Next, the configuration of each unit of the humidity adjustment mechanism 7 will be described. As described above, the substrate accommodation unit 20 shown in Fig. 3(a) accommodates a plurality of wafers W and suppresses changes in the amount of moisture contained in the coating of the accommodated wafers W. Since the substrate accommodation unit 20 can accommodate a plurality of wafers W, it functions as a buffer where the wafers W wait until they are handed over to the exposure tool 3. The substrate accommodation unit 20 may be provided between the interface block 6 and the exposure tool 3.

[0029] The change in the moisture content in the substrate accommodating unit 20 is suppressed compared to the transfer space (e.g., the space in which the transfer devices A3 and A8 can move) that accommodates the transfer devices in the coating / developing device 2. The increase / decrease in the moisture content of the wafer W accommodated in the substrate accommodating unit 20 per unit time is smaller than that of the wafer W staying in either the transfer space or the exposure device 3. When the moisture content of the wafer W staying in the transfer space increases, the increase in the moisture content of the wafer W accommodated in the substrate accommodating unit 20 per unit time is smaller than that of the wafer W in the transfer space. When the exposure device 3 is maintained in a substantial vacuum state, the moisture content of the coating of the wafer W decreases when the wafer W stays in the exposure device 3. In this case, the decrease in the moisture content of the wafer W accommodated in the substrate accommodating unit 20 per unit time is smaller than that of the wafer W in the exposure device 3.

[0030] For example, the substrate accommodating unit 20 has a housing 21, a plurality of storage shelves 22, and a supply path 23. The housing 21 is configured to separate an external space (transport space) from an internal space. For example, the housing 21 is a box having an internal space. An opening for inserting and removing the wafer W may be formed in at least a part of the housing 21. The housing 21 may be configured to suppress the inflow and outflow of gas through the opening by an air curtain. The housing 21 accommodates a plurality of storage shelves 22, and a supply path 23 is connected to one end of the housing 21. The plurality of storage shelves 22 each hold a plurality of wafers W. The supply path 23 supplies air to the space within the housing 21 such that a change in the moisture content is suppressed. For example, a device for generating low-humidity dry air may be connected to one end of the supply path 23, and the supply path 23 may supply the low-humidity dry air into the housing 21. The dry air supplied by the supply path 23 has a humidity level such that a change in the moisture content of the wafer W accommodated in the substrate accommodating unit 20 is suppressed. For example, the humidity of the dry air supplied through the supply path 23 is lower than the humidity in the transfer space, and the humidity in the exposure device 3 is also higher.

[0031] The dehydration unit 30 shown in FIG. 3B accommodates one or more wafers W and reduces the moisture content of the coating of the accommodated wafers W. For example, the dehydration unit 30 has a housing 31, a support plate 32, and a connection pipe 33. The housing 31 is a box that separates an external space (transport space) from an internal space. The support plate 32 is a plate-shaped member that supports the wafer W to be dehydrated. The connection pipe 33 is connected to one end of the housing 31, and a vacuum device (not shown) is connected to one end of the connection pipe 33 opposite to the housing 31. As a result, the space within the housing 31 is suctioned, and the inside (internal space) of the dehydration unit 30 is maintained in a substantially vacuum state. By maintaining the internal space within the housing 31 in a substantially vacuum state, the moisture content of the coating of the wafers W accommodated in the dehydration unit 30 is reduced.

[0032] (Control device) Returning to Fig. 2, the control device 100 controls each element included in the coating / developing apparatus 2. The control device 100 is configured to execute the following operations: control the processing module 12 to form a coating of a metal-containing resist on the wafer W, control the heat processing unit U8 to heat-process the wafer W on which the coating has been formed and the coating has been subjected to an exposure process, control the developing unit U7 to develop the coating of the wafer W that has been subjected to the heat process, and reduce the difference between the wafers W in the amount of moisture that reacts during the heat process in the coating formed on the wafer W (hereinafter referred to as "amount of reacted moisture").

[0033] The control device 100 may be configured to execute a process for reducing the difference in the amount of moisture contained in the metal-containing resist at the start of the heat treatment by the heat treatment unit U8 for each wafer W, so as to reduce the difference in the amount of reactive moisture for each wafer W. Hereinafter, the amount of moisture contained in the coating of the metal-containing resist is simply referred to as the "moisture content," and the amount of moisture contained at the start of the heat treatment by the heat treatment unit U8 may also be simply referred to as the "moisture content at the start of the heat treatment."

[0034] A specific configuration of the control device 100 will be illustrated below. As shown in Fig. 4, the control device 100 has, as functional components (hereinafter referred to as "functional modules"), a transfer reference time setting section 102, a waiting time acquiring section 104, a transfer control section 106, a residence time calculating section 108, a spin-drying time calculating section 110, a thermal processing unit control section 114, and an operation command holding section 116. The operation command holding section 116 may include, for example, a processing schedule including a transfer plan for each of the multiple wafers W.

[0035] The transfer reference time setting unit 102 is configured to set a transfer reference time. For example, the transfer reference time is a certain target value for the time (accommodation waiting time) required for one wafer W from after the film formation process by the processing module 12 until the wafer W is loaded into the substrate accommodation unit 20. The accommodation waiting time includes a time during which any of the transport devices supports and transports the wafer W, and a time during which the wafer W is not transported by the transport device. The transfer reference time setting unit 102 sets the transfer reference time based on the transport plan stored in the operation command storage unit 116. The transfer reference time setting unit 102 outputs the set transfer reference time to the transport control unit 106.

[0036] The waiting time acquisition unit 104 is configured to acquire a planned waiting time. The planned waiting time is, for example, a planned time for the wafer W to stay in the shelf unit U11. The waiting time acquisition unit 104 acquires the planned waiting time of the wafer W in the shelf unit U11 based on the transfer plan stored in the operation command storage unit 116. The waiting time acquisition unit 104 outputs the acquired planned waiting time to the transfer control unit 106.

[0037] The transfer control unit 106 controls the transfer device A3 and the transfer device A8 to transfer the wafer W. The transfer control unit 106 adjusts the accommodation waiting time for each wafer W based on the transfer reference time set by the transfer reference time setting unit 102 and the scheduled waiting time acquired by the waiting time acquisition unit 104. For example, the transfer control unit 106 calculates an adjustment time according to the transfer reference time, the scheduled waiting time, and the scheduled transfer required time. The scheduled transfer required time is, for example, a scheduled time required for the transfer device A8 to transport the wafer W from the shelf unit U11 to the substrate accommodation unit 20. The adjustment time is a time added to either the scheduled transfer required time or the scheduled waiting time in order to reduce the time difference between the accommodation waiting times for each wafer W. Specifically, the adjustment time for each wafer W is calculated by subtracting the scheduled waiting time and the scheduled transfer required time from the transfer reference time. The transfer control unit 106 may extend the scheduled waiting time or the scheduled transfer required time by the calculated adjustment time. The transfer control unit 106 controls the transfer devices A3 and A8 so as to transfer each wafer W into the substrate accommodation unit 20 within the adjusted accommodation waiting time.

[0038] The residence time calculation unit 108 is configured to calculate the residence time of each of the multiple wafers W in the exposure tool 3. The residence time calculation unit 108 outputs the calculated residence time to the transfer control unit 106 and the spinning time calculation unit 110.

[0039] The spin-drying time calculation unit 110 calculates the spin-drying time for each wafer W in the spin-drying unit 30 according to the residence time in the exposure tool 3 calculated by the residence time calculation unit 108. The spin-drying time is the time that the wafer W stays in the spin-drying unit 30. The spin-drying time calculation unit 110 calculates the spin-drying time for each wafer W such that the longer the residence time in the exposure tool 3, the shorter the residence time in the spin-drying unit 30. The spin-drying time calculation unit 110 outputs the calculated spin-drying time to the transfer control unit 106.

[0040] The thermal processing unit control unit 114 controls the heating process before and after development by the thermal processing unit U8. For example, the thermal processing unit control unit 114 controls the heating time of the heating process in the thermal processing unit U8 based on the processing schedule stored in the operation command storage unit 116.

[0041] The control device 100 is composed of one or more control computers. For example, the control device 100 has a circuit 120 shown in FIG. 5. The circuit 120 has one or more processors 121, a memory 122, a storage 123, a timer 124, and an input / output port 125. The storage 123 has a computer-readable storage medium such as a hard disk. The storage medium stores a program for causing the control device 100 to execute the substrate processing procedure described below. The storage medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk. The memory 122 temporarily stores the program loaded from the storage medium of the storage 123 and the calculation results by the processor 121. The processor 121 configures each of the above-mentioned functional modules by executing the above-mentioned programs in cooperation with the memory 122. The input / output port 125 inputs and outputs electrical signals between the transport devices A3, A8 and the heat treatment unit U8 according to instructions from the processor 121. The timer 124 measures the elapsed time by, for example, counting reference pulses at a constant period.

[0042] The hardware configuration of the control device 100 is not necessarily limited to configuring each functional module by a program. For example, each functional module of the control device 100 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates the dedicated logic circuit.

[0043] [Substrate processing procedure] Next, as an example of a substrate processing method, a substrate processing procedure executed in the coating / developing apparatus 2 will be described. This substrate processing procedure includes forming a coating (metal-containing resist coating) on ​​the wafer W, heating the wafer W on which the coating has been formed and the coating has been subjected to an exposure process, and developing the coating on the wafer W that has been subjected to the heat process. This substrate processing procedure further includes reducing a difference between the amounts of moisture that react in the coating formed on the wafer W during the heat process by the heat processing unit U8 for each wafer W. Hereinafter, an example of an adjustment procedure (hereinafter referred to as a "reaction moisture amount adjustment procedure") executed to reduce a difference between the amounts of reactive moisture for each wafer W during the heat process will be described.

[0044] In this embodiment, the procedure for adjusting the amount of reactive moisture includes a procedure for adjusting the amount of moisture contained in each wafer W before the exposure process by the exposure device 3, and a procedure for adjusting the amount of moisture contained in each wafer W after the exposure process by the exposure device 3. As an example of the adjustment of the amount of moisture contained in each wafer W before the exposure process, the control device 100 controls the transfer device A8 to transfer the wafer W on which a coating has been formed into the substrate accommodating unit 20. The control device 100 also controls the transfer device A8 to reduce the difference between the time for each wafer W from when it is transferred out of the processing module 12 to when it is transferred into the substrate accommodating unit 20. In other words, the control device 100 adjusts the amount of moisture contained in each wafer W by adjusting the accommodation waiting time for each wafer W from when it is subjected to the film formation process in the processing module 12 to when it is subjected to the substrate accommodating unit 20.

[0045] 6 is a flow chart showing a procedure for adjusting the moisture content before the exposure process. In this adjustment procedure, the control device 100 first executes step S11. In step S11, the transfer reference time setting unit 102 sets a transfer reference time based on a transfer plan stored in the operation command storage unit 116. For example, the transfer reference time setting unit 102 may set the longest time among the planned times required for the wafers W to be accommodated in the substrate accommodation unit 20 after the film formation process in the processing module 12 as the transfer reference time. Alternatively, the transfer reference time setting unit 102 may set a reference time input in advance to the operation command storage unit 116 by an operator as the transfer reference time. The transfer reference time setting unit 102 outputs the set transfer reference time to the transfer control unit 106.

[0046] Next, the control device 100 executes step S12. In step S12, the waiting time acquisition unit 104 acquires a scheduled waiting time based on the transfer plan stored in the operation command storage unit 116. For example, the waiting time acquisition unit 104 acquires a scheduled waiting time at the shelf unit U11 for the wafer W to be adjusted, which is included in the transfer plan, from the operation command storage unit 116. The transfer plan includes a scheduled carry-in time to the shelf unit U11 and a scheduled carry-out time from the shelf unit U11. The waiting time acquisition unit 104 calculates the scheduled waiting time from the difference between the scheduled carry-in time to the shelf unit U11 and the scheduled carry-out time from the shelf unit U11. The waiting time acquisition unit 104 outputs the acquired scheduled waiting time to the transfer control unit 106.

[0047] Next, the control device 100 executes step S13. In step S13, the transfer control unit 106 calculates an adjustment time for the wafer W to be transferred. For example, the transfer control unit 106 calculates the adjustment time for the wafer W based on the transfer reference time set by the transfer reference time setting unit 102, the planned waiting time acquired by the waiting time acquisition unit 104, and a known transfer required time. The known transfer required time is the time it takes for one wafer W to be transferred from the shelf unit U11 by the transfer device A8 to be transferred into the substrate accommodation unit 20, and is approximately constant for each wafer W. The transfer control unit 106 calculates the adjustment time by subtracting the planned waiting time and the transfer required time from the transfer reference time.

[0048] Next, the control device 100 executes steps S14 and S15. In step S14, for example, the transfer control unit 106 controls the transfer device A8 so that the wafer W stays in the shelf unit U11 for an adjustment time longer than the scheduled waiting time. In other words, the transfer control unit 106 controls the transfer device A8 to wait for removal from the shelf unit U11 for the adjustment time. When the adjustment time has elapsed in step S14, the control device 100 executes step S15. In step S15, the transfer control unit 106 controls the transfer device A8 so that the wafer W is removed from the shelf unit U11 and the wafer W is loaded into the substrate accommodating unit 20. As a result, the adjustment time is calculated for each wafer W according to the waiting time in the shelf unit U11, and the time difference for each wafer W in the accommodation waiting time required from the film formation process in the processing module 14 to accommodation in the substrate accommodating unit 20 is reduced.

[0049] The transfer control unit 106 may adjust the transfer speed of the transfer device A8 in accordance with the adjustment time, without changing the scheduled waiting time in the shelf unit U11. The transfer control unit 106 may reduce the time difference between the accommodation waiting times for each wafer W by changing the transfer speed of the transfer device A8 so that the scheduled transfer time is longer by the adjustment time. The operation command holding unit 116 may store an operation command in which the accommodation waiting time has already been adjusted, and the transfer control unit 106 may adjust the accommodation waiting time for each wafer W by executing transfer based on the operation command.

[0050] Next, the control device 100 executes step S16. In step S16, the transfer control unit 106 determines whether or not it has received an unloading command for the wafers W from the operation command storage unit 116. If the unloading command has not been received, the transfer control unit 106 repeats steps S12 to S16. As a result, the multiple wafers W are accommodated in the substrate accommodation unit 20 while the accommodation waiting time for each of the multiple wafers W is adjusted to the transport reference time.

[0051] In step S16, when the transfer control unit 106 receives the unloading command, the control device 100 executes step S17. In step S17, the transfer control unit 106 controls the transfer device A8 to unload the wafer W to be unloaded. For example, the transfer control unit 106 unloads the wafer W that has been in the substrate accommodating unit 20 the longest as the unloading target. The transfer control unit 106 controls the transfer device A8 to deliver the wafer W unloaded from the substrate accommodating unit 20 to the exposure device 3. The timing of loading into the exposure device 3 may be determined by the timing of the exposure process by the exposure device 3. For this reason, the waiting time until the wafer W is loaded into the exposure device 3 differs for each wafer W depending on the timing of the exposure process by the exposure device 3, and if the wafer W is made to wait in the transfer space outside the substrate accommodating unit 20, the moisture content may change (may increase). In contrast, since differences in moisture content among wafers W due to waiting time are unlikely to occur within the substrate accommodation unit 20 even if the residence time is different, the control device 100 reduces the differences in moisture content by having the wafers W wait in the substrate accommodation unit 20.

[0052] Next, an example of a procedure for adjusting the moisture content after the exposure process will be described. Fig. 7 is a flow chart showing a procedure for adjusting the dehydration time in the dehydration unit 30. The control device 100 controls the transfer device A8 to load at least a part of the wafers W after the exposure process into the dehydration unit 30, and to unload the wafers W from the dehydration unit 30 at a timing set so that the residence time of the wafers W in the dehydration unit 30 becomes longer as the residence time in the exposure device 3 becomes shorter.

[0053] 7, first, the control device 100 executes step S21. In step S21, the residence time calculation unit 108 acquires the time when the wafer W is carried into the exposure device 3 (carry-in time). The control device 100 waits until the exposure process for the wafer W in the exposure device 3 is completed, and then executes step S22. In step S22, the residence time calculation unit 108 acquires the time when the wafer W is carried out from the exposure device 3 (carry-out time).

[0054] Next, the control device 100 executes step S23. In step S23, the residence time calculation unit 108 calculates the residence time of the wafer W, which has been carried out from the exposure tool 3, in the exposure tool 3. For example, the residence time calculation unit 108 calculates the difference between the carry-out time acquired in step S22 and the carry-in time acquired in step S21 as the residence time in the exposure tool 3. The residence time calculation unit 108 outputs the calculated residence time to the spinning time calculation unit 110.

[0055] Next, the control device 100 executes step S24. In step S24, the control device 100 judges whether the residence time calculated by the residence time calculation unit 108 is shorter than a predetermined reference time. The reference time may be the expected maximum residence time in the exposure device 3, or may be the saturation time of the expected moisture content. The saturation time is the time that the sample should stay in the exposure device 3 in order to reduce the reduction rate of the moisture content per unit time to a predetermined threshold value. If it is determined in step S24 that the residence time is equal to or longer than the reference time, the control device 100 executes step S29. The processing content of step S29 will be described later.

[0056] If it is determined in step S24 that the residence time is shorter than the reference time (e.g., the saturation time), the control device 100 executes step S25. In step S25, the spin-drying time calculation unit 110 calculates the spin-drying time in the spin-drying unit 30 based on the residence time calculated by the residence time calculation unit 108. The spin-drying time here means the time during which the wafer W stays in the spin-drying unit 30. For example, the spin-drying time calculation unit 110 calculates the spin-drying time for the wafer W in the spin-drying unit 30 according to the residence time in the exposure tool 3. The spin-drying time calculation unit 110 calculates the spin-drying time such that the longer the residence time in the exposure tool 3, the shorter the spin-drying time. In other words, the spin-drying time calculation unit 110 calculates the spin-drying time such that the shorter the residence time in the exposure tool 3, the longer the spin-drying time. The spin-drying time calculation unit 110 may calculate the difference between the reference time and the residence time as the spin-drying time, or may calculate the value obtained by performing a predetermined correction process on the difference as the spin-drying time. The spin-drying time calculation unit 110 may calculate the spin-drying time in the spin-drying unit 30 by referring to a table that is stored in advance in the storage 123 and that associates the residence time in the exposure apparatus 3 with the spin-drying time. The spin-drying time calculation unit 110 outputs the calculated spin-drying time to the transport control unit 106.

[0057] Next, the control device 100 executes step S26. In step S26, the transfer control unit 106 transfers the wafer W to be adjusted into the spin-drying unit 30. For example, the transfer control unit 106 controls the transfer device A8 to transfer the wafer W to be adjusted, which has been transferred from the exposure device 3, into the spin-drying unit 30.

[0058] Next, the control device 100 executes step S27. In step S27, the control device 100 waits for the spin-drying time calculated (set) for the wafer W to be adjusted to elapse. When the spin-drying time has elapsed, the control device 100 executes step S28. In step S28, for example, the transfer control unit 106 controls the transfer device A8 to transfer the wafer W that has stayed in the spin-drying unit 30 for the calculated spin-drying time out of the spin-drying unit 30.

[0059] Next, the control device 100 executes step S29. In step S29, the transfer control unit 106 controls the transfer device A8 and the transfer device A3 to transfer the wafer W to the heat treatment unit U8. If it is determined in step S22 that the residence time in the exposure device 3 is equal to or longer than the reference time, the transfer control unit 106 controls the transfer devices A3 and A8 to transfer the wafer W from the exposure device 3 to the heat treatment unit U8 without passing through the spinning unit 30.

[0060] This completes the adjustment of the amount of reactive moisture (amount of moisture content) after exposure processing for one wafer W. The controller 100 executes steps S21 to S29 for each wafer W. The controller 100 may load all of the wafers W to be adjusted into the dehydration unit 30 and adjust the dehydration time for each of the wafers W without executing the determination processing of step S24. After the wafers W are loaded into the heat-processing unit U8 after the above-mentioned adjustment of the dehydration time, the heat-processing unit control unit 114 may be held in the operation command holding unit 116 and control the heat-processing unit U8 so that the wafers W are heated for a preset heating time.

[0061] [Effects of the embodiment] The coating and developing apparatus 2 according to the present embodiment described above includes a coating unit U3 and a heat treatment unit U4 which form a coating on the wafer W, a heat treatment unit U8 which heat-treats the wafer W on which a coating has been formed and on which an exposure process has been performed, a developing unit U7 which develops the coating on the wafer W which has been subjected to heat treatment, and a control device 100 which reduces the difference between wafers W in the amount of moisture which reacts in the coating formed on the wafer W during heat treatment in the heat treatment unit U8.

[0062] In this coating / developing apparatus 2, the difference between the amount of moisture (reactive moisture amount) that reacts in the coating formed on the wafer W during the heat treatment in the heat treatment unit U8 is reduced by the control device 100 for each wafer W. The dimensions of the resist pattern formed using the metal-containing resist are easily affected by the amount of moisture that reacts in the coating during the heat treatment before the development treatment. Therefore, if the amount of reactive moisture differs for each wafer W, the dimensions of the resist pattern formed between the wafers W are likely to vary. In contrast, in the coating / developing apparatus 2, the difference between the amount of reactive moisture when the wafer W that has been subjected to the exposure treatment is heat treated is reduced by the control device 100, so that the dimensions of the resist pattern are less likely to vary between the wafers W. As a result, the coating / developing apparatus 2 is effective in improving the dimensional stability of the resist pattern using the metal-containing resist.

[0063] The control device 100 reduces the difference between the amounts of moisture contained in the coating for each wafer W at the start of the heat treatment in the heat treatment unit U8. In this case, the difference between the amounts of moisture contained in the coating at the start of the heat treatment in the heat treatment unit U8 is reduced, so that the difference between the amounts of reactive moisture is reduced. As a result, the dimensional stability of the resist pattern formed using the metal-containing resist is improved.

[0064] The control device 100 adjusts the moisture content of each wafer W at least before the exposure process so as to reduce the difference between the moisture content of each wafer W at the start of the heat treatment in the heat treatment unit U8. The dimensions of the resist pattern are also affected by the moisture content during the exposure process. In the above configuration, the moisture content is adjusted before the exposure process, so that the difference between the moisture content of each wafer W during the exposure process is also reduced. As a result, the dimensional stability of the resist pattern is more reliably improved.

[0065] The coating / developing apparatus 2 further includes a transport device A3, A8 for transporting the wafer W, and a substrate accommodation unit 20 configured to suppress changes in moisture content compared to a transport space that accommodates the transport devices A3, A8. The control device 100 controls the transport devices A3, A8 to transport the wafer W before the exposure process into the substrate accommodation unit 20 after the coating unit U3 and the heat treatment unit U4 form a coating film. The time until the wafer W is transported to the exposure device 3 after the heat treatment (film formation) by the heat treatment unit U4 may differ for each wafer W. In the above configuration, the wafer W waits in a space where changes in the moisture content of the coating are suppressed, thereby suppressing changes in the moisture content of the wafer W that waits for a long time before being transported to the exposure device 3. As a result, the difference in moisture content between wafers W is reduced, and the dimensional stability of the resist pattern can be improved.

[0066] The control device 100 controls the transport devices A3 and A8 so as to reduce the difference between the wafers W in the time from when they are unloaded from the heat treatment unit U4 to when they are loaded into the substrate accommodation unit 20. The moisture content of the coating may change during the transport from the heat treatment (film formation) by the heat treatment unit U4 to when they are loaded into the substrate accommodation unit 20. Therefore, if there is a difference between the transport times from the heat treatment unit U4 to the substrate accommodation unit 20 between the wafers W, there will be a difference between the moisture content of each wafer W. In the above configuration, the difference between the transport times between when the wafers W are unloaded from the heat treatment unit U4 to when they are loaded into the substrate accommodation unit 20 is reduced, so that the difference between the moisture content of each wafer W due to the transport is reduced. As a result, it is possible to more reliably improve the dimensional stability of the resist pattern.

[0067] The control device 100 adjusts the moisture content of each wafer W at least after the exposure process by the exposure device 3 so as to reduce the difference in moisture content between wafers W at the start of the heat treatment in the heat treatment unit U8. The moisture content may also change within the exposure device 3. In the above configuration, the moisture content is adjusted for each wafer W at least after the exposure process, so that the difference in moisture content between wafers W, including the difference in moisture content between wafers W caused by the exposure device 3, is reduced. As a result, it is possible to more reliably improve the dimensional stability of the resist pattern using the metal-containing resist.

[0068] The control device 100 adjusts the moisture content of each wafer W after the exposure process according to the residence time in the exposure tool 3. If the residence time of each wafer W differs in the exposure tool 3, a difference in moisture content occurs between each wafer W. In the above configuration, the difference in moisture content between each wafer W is adjusted according to the residence time in the exposure tool 3, so that the difference in moisture content between each wafer W caused by the residence in the exposure tool 3 is reduced. As a result, it is possible to improve the dimensional stability of the resist pattern using a metal-containing resist.

[0069] The control device 100 controls the transport device A8 to load at least a part of the wafers W after the exposure process into the dehydration unit 30, and to unload the wafers W from the dehydration unit 30 at a timing set so that the residence time (dehydration time) of the wafers W in the dehydration unit 30 becomes longer as the residence time in the exposure device 3 becomes shorter. The shorter the residence time in the exposure device 3, the less the moisture content of the wafers W decreases. In the above configuration, the shorter the residence time in the exposure device 3, the longer the residence time in the dehydration unit 30, so the moisture content of the coating on the wafers W decreases more. This reduces the difference in moisture content between wafers W, making it possible to improve the dimensional stability of the resist pattern using a metal-containing resist.

[0070] Although the embodiments have been described above, the present disclosure is not necessarily limited to the above-described embodiments, and various modifications are possible without departing from the gist of the present disclosure.

[0071] (Modification of the first embodiment) The method of adjusting the moisture content after the exposure process is not limited to the method using the dehydration unit 30. For example, the control device 100 may use a humidification unit 40 (humidification section) instead of the dehydration unit 30 to adjust the moisture content of the wafer W after the exposure process.

[0072] For example, the humidification unit 40 (configuration example not shown) has a housing, a support plate, and a supply path. The housing has an internal space and houses the support plate. The support plate supports the wafer W. The supply path is connected to one end of the housing and supplies humidified air (humidified air) into the housing. The humidification environment in the humidification unit 40 (e.g., the rate of increase in moisture content per unit time) may be kept approximately constant by adjusting the supply amount of humidified air by the control device 100.

[0073] The control device 100 controls the transfer device A8 to load at least some of the wafers W (including all of the wafers W) after the exposure process into the humidification unit 40, and to unload the wafers W from the humidification unit 40 at a timing set so that the residence time of the wafers W in the humidification unit 40 becomes longer as the residence time in the exposure device 3 becomes longer. Note that a flowchart showing the procedure for adjusting the humidification time by the humidification unit 40 (the residence time in the humidification unit 40) is omitted.

[0074] For example, in adjusting the humidification time, first, the residence time calculation unit 108 calculates the residence time at the exposure tool 3 in the same manner as in step S21. Next, the control device 100 calculates the humidification time at the humidification unit 40 according to the residence time at the exposure tool 3. The control device 100 calculates the humidification time such that the humidification time at the humidification unit 40 becomes longer as the residence time at the exposure tool 3 becomes longer. In other words, the control device 100 calculates the humidification time such that the humidification time at the humidification unit 40 becomes shorter as the residence time at the exposure tool 3 becomes shorter. Then, the transfer control unit 106 controls the transfer device A8 to transfer the wafer W into the humidification unit 40.

[0075] After the wafer W is carried into the humidification unit 40 and the calculated humidification time has elapsed, the transfer control unit 106 controls the transfer device A8 to carry the wafer W out of the humidification unit 40. Then, the transfer control unit 106 controls the transfer devices A3 and A8 to carry the wafer W into the heat treatment unit U8. Thereafter, the heat treatment unit control unit 114 controls the heat treatment unit U8 to subject the wafer W to heat treatment, based on the operation command from the operation command holding unit 116. The control device 100 adjusts the humidification time for each wafer W in this manner, thereby adjusting the moisture content for each wafer W after the exposure process.

[0076] In this modification, the control device 100 loads at least a part of the wafers W after the exposure process into the humidification unit 40, and controls the transport device A8 to load the wafers W from the humidification unit 40 at a timing set so that the residence time (humidification time) of the wafers W in the humidification unit 40 becomes longer as the residence time in the exposure device 3 becomes longer. The longer the residence time in the exposure device 3, the less moisture content the wafers contain. In the above configuration, the longer the residence time in the exposure device, the longer the residence time in the humidification unit, so the more moisture content the wafers contain. This reduces the difference in moisture content between wafers, making it possible to improve the dimensional stability of resist patterns using metal-containing resists.

[0077] The control device 100 may adjust the moisture content using both the dehydration unit 30 and the humidification unit 40 after the exposure process.

[0078] The control device 100 adjusts the moisture content by using either the dehydration unit 30 or the humidification unit 40, and does not need to adjust the moisture content by adjusting the substrate accommodation unit 20 and the transport time. In this case, the coating and developing apparatus 2 does not need to include the substrate accommodation unit 20.

[0079] The control device 100 may adjust the moisture content by adjusting the substrate accommodation unit 20 and the transport time (accommodation waiting time), and may not adjust the moisture content using the dehydration unit 30 and the humidification unit 40. In this case, the coating / developing apparatus 2 may not be provided with the dehydration unit 30 and the humidification unit 40. The control device 100 may adjust the moisture content before the exposure process by accommodating the wafer W in the substrate accommodation unit 20 without adjusting the moisture content by adjusting the transport time. For example, the difference in the waiting time caused by the operation of the transport device A8 in the coating / developing apparatus 2 may be small compared to the difference in the waiting time for each wafer W caused according to the processing timing by the exposure device 3. In this case, there is a possibility that the moisture content can be sufficiently adjusted even if the adjustment of the transport time is omitted. In such a case, the processing load of the control device 100 is reduced by omitting the adjustment of the transport time.

[0080] [Second embodiment] Next, a substrate processing system 1 according to a second embodiment will be described with reference to Fig. 8. The substrate processing system 1 (coating / developing apparatus 2) according to the second embodiment differs from the first embodiment in that the control device 100 includes a heating time calculation unit 112 instead of the spin-drying time calculation unit 110, and in that the control device 100 adjusts the amount of reacted water.

[0081] The control device 100 adjusts the heat treatment time in the heat treatment unit U8 according to the residence time in the exposure tool 3. Specifically, the control device 100 may control the heat treatment unit U8 so that the heat treatment time of the wafer W becomes longer as the residence time in the exposure tool 3 becomes longer. The heating time calculation unit 112 of the control device 100 calculates the heating time for each wafer W in the heat treatment by the heat treatment unit U8 according to the residence time in the exposure tool 3 calculated by the residence time calculation unit 108. The heating time calculation unit 112 outputs the calculated heating time to the heat treatment unit control unit 114. The heat treatment unit control unit 114 may control the heat treatment unit U8 to perform the heat treatment before development for the heating time calculated by the heating time calculation unit 112.

[0082] 8 is a flowchart showing the procedure for adjusting the heat treatment time in the heat treatment unit U8. As shown in FIG. 8, in this procedure for adjusting the heat treatment time, first the control device 100 executes step S31. In step S31, the residence time calculation unit 108 acquires the time of loading into the exposure tool 3 and the time of unloading from the exposure tool 3, and calculates the residence time in the exposure tool 3 in the same manner as in step S23. The residence time calculation unit 108 outputs the calculated residence time in the exposure tool 3 to the heating time calculation unit 112.

[0083] Next, the control device 100 executes step S32. In step S32, the heating time calculation unit 112 calculates the heating time in the heat treatment unit U8 based on the residence time calculated by the residence time calculation unit 108. The heating time here means the time of the heat treatment performed on the wafer W before development in the heat treatment unit U8. For example, the heating time calculation unit 112 calculates the heating time in the heat treatment unit U8 for the wafer W according to the residence time in the exposure tool 3. The heating time calculation unit 112 calculates the heating time such that the heating time becomes longer as the residence time in the exposure tool 3 becomes longer. In other words, the heating time calculation unit 112 calculates the heating time such that the heating time becomes shorter as the residence time in the exposure tool 3 becomes shorter. The heating time calculation unit 112 may calculate the heating time in the heat treatment unit U8 by referring to a table that is stored in advance in the storage 123 and that associates the residence time in the exposure tool 3 with the above-mentioned heating time. The heating time calculation unit 112 outputs the calculated heating time to the heat treatment unit control unit 114.

[0084] Next, the control device 100 executes step S33. In step S33, the transfer control unit 106 controls the transfer devices A3 and A8 to transfer the wafer W into the heat-treating unit U8. After the transfer device A3 transfers the wafer W into the heat-treating unit U8, the heat-treating unit control unit 114 controls the heat-treating unit U8 to start heat treatment of the wafer W.

[0085] Next, the control device 100 executes step S34. In step S34, the heat treatment unit control unit 114 waits until the heating time calculated by the heating time calculation unit 112 has elapsed. After the heating time has elapsed, the control device 100 executes step S35. In step S35, for example, the transfer control unit 106 controls the transfer device A3 to transfer the wafer W that has been subjected to the heat treatment for the heating time calculated (set) by the heating time calculation unit 112 out of the heat treatment unit U8. Note that the transfer control unit 106 may control the transfer device A8 to transfer the wafer W that has been subjected to the heat treatment for the heating time out of the heat treatment unit U8 after the wafer W is cooled by a cooling plate in the heat treatment unit U8.

[0086] This completes the procedure for adjusting the heat treatment time for one wafer W. The controller 100 repeats the processes of steps S31 to S35 for each wafer W. After the process of step S35, the transfer control unit 106 controls the transfer device A3 to transfer the wafer W unloaded from the heat treatment unit U8 into the development unit U7. Thereafter, the controller 100 controls the development unit U7 to perform a development process on the wafer W. Then, the controller 100 may control the transfer device A3 and the heat treatment unit U8 to perform a post-development heat treatment on the wafer W in the heat treatment unit U8 after the development process.

[0087] In the coating / developing apparatus 2 of the substrate processing system 1 according to the second embodiment, the control device 100 controls the heat treatment unit U8 so that the longer the residence time in the exposure tool 3, the longer the heat treatment time of the wafer W. In this case, the longer the residence time in the exposure tool 3, the less the moisture content, and the longer the heat treatment time in the heat treatment unit U8. Also, the shorter the residence time in the exposure tool 3, the more the moisture content, and the shorter the heat treatment time in the heat treatment unit U8. Therefore, even if there is a difference in the residence time in the exposure tool 3, the difference in the amount of reactive moisture for each wafer W during the heat treatment in the heat treatment unit U8 is reduced. As a result, it is possible to improve the dimensional stability of the resist pattern using a metal-containing resist.

[0088] In addition to adjusting the heating time in the thermal processing unit U8, the control device 100 may adjust the moisture content by adjusting the substrate accommodation unit 20 and the transport time before the exposure process, as in the first embodiment. The control device 100 may adjust the heating time in the thermal processing unit U8, and may not adjust the moisture content by adjusting the substrate accommodation unit 20 and the transport time before the exposure process. In this case, even if a device for adjusting the amount of reactive moisture (humidity adjustment mechanism 7) is not provided, the amount of reactive moisture is adjusted, so that both dimensional stability and simplification of the coating and developing apparatus 2 can be achieved. The control device 100 may combine the adjustment of the heating time in the second embodiment with the adjustment by the dehydration unit 30 or the humidification unit 40 in the first embodiment.

[0089] [Third embodiment] Next, a substrate processing system 1 according to a third embodiment will be described with reference to FIG. 9. In the substrate processing system 1 (coating and developing apparatus 2) according to the third embodiment, the procedure for adjusting the moisture content before the exposure process by the control device 100 is different from that of the first embodiment. The control device 100 adjusts the moisture content before the exposure process by the dehydration unit 30. In this case, the control device 100 controls the transfer device A8 to transfer the wafer W before the exposure process by the exposure device 3 to the dehydration unit 30 after the heat treatment (film formation) in the heat treatment unit U4. In addition, the control device 100 controls the transfer device A8 to transfer the wafer W from the dehydration unit 30 at a timing set to reduce the difference in moisture content of each wafer W when transferred out of the dehydration unit 30 compared to when transferred into the dehydration unit 30.

[0090] 9 shows an adjustment procedure for the timing of removal from the spin-drying unit 30 (stay time in the spin-drying unit 30) as an example of an adjustment procedure by the spin-drying unit 30 before exposure processing. In this adjustment procedure, the control device 100 first executes step S41. In step S41, for example, the transfer control unit 106 controls the transfer device A8 to sequentially transfer multiple wafers W from the shelf unit U11 to the spin-drying unit 30 based on the transfer plan in the operation command storage unit 116.

[0091] Next, the control device 100 executes step S42. In step S42, the transfer control unit 106 determines whether or not it has received a command to unload the wafers W from the operation command storage unit 116. If the transfer control unit 106 has not received the unloading command, it repeats steps S41 and S42. As a result, the multiple wafers W are loaded into the dehydration unit 30.

[0092] When the transfer control unit 106 receives the unloading command in step S42, the control device 100 executes step S43. In step S43, for example, the control device 100 calculates the residence time of each of the multiple wafers W currently accommodated in the spin-drying unit 30. Then, the control device 100 executes step S44. In step S44, the transfer control unit 106 controls the transfer device A8 to unload the wafer W to be unloaded. Specifically, the transfer control unit 106 controls the transfer device A8 to unload the wafer W having the longest residence time among the multiple wafers W in the spin-drying unit 30 from the spin-drying unit 30. After being unloaded from the spin-drying unit 30, the transfer control unit 106 controls the transfer device A8 to unload the wafer W to the exposure device 3.

[0093] The control device 100 repeats the above steps S41 to S44. With this process, the wafer W that has been there the longest is unloaded each time an unloading command is received, so that the moisture content of each wafer W loaded into the exposure device 3 via the spin-drying unit 30 reaches a saturation level (a level at which the amount of decrease per unit time has fallen to a predetermined threshold). Therefore, the difference in the moisture content of each wafer W at the time of unloading from the spin-drying unit 30 is reduced compared to the time of unloading from the spin-drying unit 30. Note that the control device 100 may wait to unload the wafers W from the spin-drying unit 30 when there are few wafers W accommodated in the spin-drying unit 30 and none of the wafers W has reached the saturation level.

[0094] Instead of the process of step S44 described above, the controller 100 may control the transfer device A8 to adjust the residence time (spinning time) in the spinning unit 30 depending on the transfer time from the heat treatment unit U4 to the spinning unit 30. For example, the controller 100 may control the transfer device A8 to unload the wafer W from the spinning unit 30 at a timing such that the residence time in the spinning unit 30 becomes longer as the transfer time to the spinning unit 30 becomes longer. The controller 100 may adjust the amount of reactive moisture by the humidification unit 40 instead of the spinning unit 30 in the same manner as described above.

[0095] In the coating / developing apparatus 2 of the substrate processing system 1 according to the third embodiment, the control device 100 controls the transport device A8 to transport the wafer W to the spin-drying unit 30 after the heat treatment (film formation process) in the heat treatment unit U4 and before the exposure process. When the wafer W is transported to the spin-drying unit 30 and the moisture content of the wafer W decreases, the decrease in the moisture content reaches a state where the decrease slows down at a certain level (slowing state). Therefore, by transferring the wafer W to the exposure device 3 after transporting it to the spin-drying unit 30, the difference between the maximum and minimum moisture contents among the multiple wafers W is reduced. This reduces the difference in moisture content between the wafers W, making it possible to improve the dimensional stability of the resist pattern.

[0096] The control device 100 controls the transfer device A8 to transfer the wafer W from the dehydration unit 30 at a timing set to reduce the difference in the moisture content of each wafer W when transferred out of the dehydration unit 30 compared to when transferred into the dehydration unit 30. For example, the wafer W is transferred out of the dehydration unit 30 at a timing when the moisture content of all the wafers W in the dehydration unit 30 reaches a saturated level. Therefore, even if the wafer W in which the decrease in the moisture content is slowed down enters the exposure device 3, the moisture content in the exposure device 3 decreases only slightly regardless of the length of the stay time. This suppresses the difference in the moisture content between the wafers W caused by the stay time in the exposure device 3, and reduces the difference in the moisture content of each wafer W. Alternatively, the stay time in the dehydration unit 30 is changed according to the transfer time to the dehydration unit 30 (for example, the stay time is set longer as the transfer time is longer), thereby reducing the difference in the moisture content of each wafer W. As a result, it is possible to more reliably improve the dimensional stability of the resist pattern.

[0097] In the third embodiment, the control device 100 adjusts the moisture content of each of the multiple wafers W in the dehydration unit 30 before the exposure process so that the moisture content reaches a saturation level, and does not need to adjust the reactive moisture content (moisture content) after the exposure process. In the substrate processing system 1, the throughput of the coating / developing apparatus 2 may be greater than the throughput of the exposure apparatus 3. In this case, since the throughput of the entire substrate processing system 1 is determined by the exposure apparatus 3, it may be more effective from the viewpoint of production efficiency to perform the processing of the wafer W after the exposure process of the exposure apparatus 3 without delay (only the minimum steps necessary for the production of the wafer W). For this reason, when it is desired to achieve both the adjustment of the moisture content and the production efficiency, the coating / developing apparatus 2 may be configured so that the control device 100 adjusts the moisture content before the exposure process and does not adjust the moisture content after the exposure process.

[0098] The control device 100 may combine at least one of the adjustment by the dehydration unit 30 or the humidification unit 40 in the first embodiment and the adjustment of the heating time in the second embodiment with the adjustment by the dehydration unit 30 in the third embodiment. For example, the control device 100 may adjust the amount of moisture content by the dehydration unit 30 after the exposure process in addition to adjusting the amount of moisture content by the dehydration unit 30 before the exposure process. In this case, the coating / developing apparatus 2 may include two different dehydration units 30. For example, the control device 100 may adjust the amount of reactive moisture by adjusting the heating time of the heat treatment unit U8 after the exposure process in addition to adjusting the amount of moisture content by the dehydration unit 30 before the exposure process. The substrate processing system 1 (substrate processing apparatus) may adjust the amount of reactive moisture (amount of moisture content) by adjusting the residence time of each wafer W in the exposure apparatus 3.

[0099] The substrate to be processed is not limited to a semiconductor wafer, but may be, for example, a glass substrate, a mask substrate, or a flat panel display (FPD). [Explanation of symbols]

[0100] 1...substrate processing system, 2...coating / developing apparatus, 3...exposure apparatus, 7...humidity adjustment mechanism, 20...substrate accommodation unit, 30...dehydration unit, 40...humidification unit, 100...control device, A3, A8...transport device, U3...coating unit, U7...developing unit, U8...heat treatment unit.

Claims

1. a heat treatment section for heat-treating a substrate on which a metal-containing resist film is formed; an adjustment control unit that reduces a difference between the amount of moisture that reacts in the coating formed on the substrate during the heat treatment for each of the substrates; A transport device that transports the substrate; a substrate accommodating section configured to suppress a change in a moisture content contained in the coating compared to a transfer space that accommodates the transfer device; Equipped with the heat treatment unit performs the heat treatment after the exposure treatment of the coating and before the development treatment of the coating, the adjustment control unit adjusts the moisture content of each of the substrates so as to reduce a difference in the moisture content of each of the substrates at the start of the heat treatment; the adjustment control unit controls the transport device to transport the substrate into the substrate accommodation unit before the heat treatment; the adjustment control unit adjusts a time until the substrate is carried into the substrate accommodation unit, thereby adjusting a time during which the substrate stays in the transfer space before the heat treatment. Substrate processing equipment.

2. Further comprising a dehydration unit configured to reduce the amount of moisture contained in the coating, the adjustment control unit controls the transport device to transport the substrate into the dehydration unit before the heat treatment. The substrate processing apparatus according to claim 1 .

3. the adjustment control unit controls the transport device to unload the substrates from the dehydration unit at a timing set to reduce a difference in the moisture content among the substrates when unloaded from the dehydration unit compared to when the substrates were loaded into the dehydration unit. The substrate processing apparatus according to claim 2 .

4. the adjustment control unit adjusts the moisture content of each of the substrates in accordance with a residence time of the substrates in the exposure processing device. The substrate processing apparatus according to claim 1 .

5. Further comprising a dehydration unit configured to reduce the water content, the adjustment control unit controls the transport device to transport at least some of the substrates into the dehydration unit, and to transport the substrates out of the dehydration unit at a timing set so that the residence time of the substrates in the exposure processing device becomes longer as the residence time of the substrates in the dehydration unit becomes shorter. The substrate processing apparatus according to claim 4 .

6. Further comprising a humidifying unit configured to increase the moisture content, the adjustment control unit controls the transport device to transport at least some of the substrates into the humidification unit, and to transport the substrates out of the humidification unit at a timing set so that the residence time of the substrates in the humidification unit becomes longer as the residence time in the exposure processing device becomes longer. The substrate processing apparatus according to claim 4 .

7. The coating further includes a humidifying unit configured to increase the amount of moisture contained in the coating, the adjustment control unit controls the transport device to transport the substrate into the humidification unit before the heat treatment. The substrate processing apparatus according to claim 1 .

8. The humidification unit includes: A support plate for supporting the substrate; A housing including an internal space and accommodating the support plate; A supply path for supplying humidified air into the housing, The substrate processing apparatus according to claim 6 or 7.

9. the adjustment control unit controls the heat processing unit so that a time of the heat processing of the substrate is increased as a residence time in the exposure processing device is increased. The substrate processing apparatus according to claim 1 .

10. The substrate accommodating unit has a housing including a space for accommodating the substrate, and a supply path for supplying air that suppresses a change in the moisture content to the space in the housing. The substrate processing apparatus according to any one of claims 1 to 9.

11. The substrate processing apparatus according to claim 10 , wherein the substrate accommodation unit includes a plurality of accommodation shelves for holding a plurality of substrates including the substrate within the housing.

Images