Plasma processing apparatus and plasma processing method

Abstract

To provide a plasma processing apparatus and a plasma processing method, capable of suppressing discharge in a gas supply member.SOLUTION: A plasma processing apparatus comprises: a chamber defining a plasma processing space 10s where plasma is generated; a gas supply member for supplying processing gas into the chamber; and a control section. The gas supply member includes: a first member 131 including one or two or more first through holes; and a second member 132 arranged between the first member and the plasma processing space to be apart from the first member and including one or two or more second through holes. The control section executes control of supplying the processing gas that contains one or both of carbon and metal, and control of generating plasma from the processing gas, the plasma forming a first conductive film containing one or both of carbon and metal at least partially in the first member and a second conductive film containing one or both of carbon and metal at least partially in the second member.SELECTED DRAWING: Figure 7

Description

[Technical field]

[0001] SUMMARY OF THE DISCLOSURE Exemplary embodiments of the present disclosure relate to a plasma processing apparatus and a plasma processing method. [Background technology]

[0002] Patent Document 1 describes an electrode plate for plasma etching as a technique for optimizing the arrangement of multiple types of gas holes penetrating an electrode plate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-069868 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique capable of suppressing discharge in a gas supply member. [Means for solving the problem]

[0005] In one exemplary embodiment of the present disclosure, there is provided a plasma processing apparatus comprising: a chamber defining a plasma processing space in which plasma is generated; a gas supply member for supplying a processing gas into the chamber; and a controller, wherein the gas supply member comprises a first member including one or more first through holes and a second member disposed between the first member and the plasma processing space, the second member being disposed at a distance from the first member and including one or more second through holes, and the controller is configured to perform the following controls: (a) control to supply a processing gas to the plasma processing space, the processing gas including a gas including one or both of carbon and a metal; and (b) control to generate plasma from the processing gas in the plasma processing space, the plasma generated from the processing gas forming a first conductive film including one or both of carbon and a metal on at least a portion of the first member, and forming a second conductive film including one or both of carbon and a metal on at least a portion of the second member. Effect of the Invention

[0006] According to one exemplary embodiment of the present disclosure, discharge can be suppressed in the gas supply member. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. [Diagram 2] FIG. 1 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus. [Diagram 3] FIG. 1 is a diagram for explaining a configuration example of an inductively coupled plasma processing apparatus. [Figure 4] FIG. 2 is a diagram illustrating an example of a configuration of a gas supply member. [Diagram 5] FIG. 1 is a diagram illustrating an example of a configuration and arrangement of a gas supply member. [Figure 6] 3A and 3B are diagrams illustrating an example of the configuration and arrangement of a gas supply member. [Figure 7] 7 is an enlarged view of a part of the gas supply member 15 shown in FIGS. 4 to 6. FIG. [Figure 8] 1 is a flowchart illustrating an example of a plasma processing method. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Each embodiment of the present disclosure will be described below.

[0009] In one exemplary embodiment, a plasma processing apparatus is provided, the plasma processing apparatus includes a chamber defining a plasma processing space in which plasma is generated, a gas supply member for supplying a processing gas into the chamber, and a controller, the gas supply member including a first member including one or more first through holes, and a second member disposed between the first member and the plasma processing space, the second member being disposed apart from the first member and including one or more second through holes, the controller is configured to execute (a) control of supplying a processing gas into the plasma processing space, the processing gas including a gas including one or both of carbon and metal, and (b) control of generating plasma from the processing gas in the plasma processing space, the plasma generated from the processing gas forming a first conductive film including one or both of carbon and metal on at least a part of the first member, and forming a second conductive film including one or both of carbon and metal on at least a part of the second member.

[0010] In one exemplary embodiment, the first member includes a first surface and a second surface opposite the first surface, the first member is positioned such that the second surface faces the second member, and one or more first through holes extend through the first member from the first surface to the second surface.

[0011] In one exemplary embodiment, the second member includes a third surface and a fourth surface opposite the third surface, the second member is positioned such that the third surface faces the second surface and the fourth surface faces the plasma processing space, and one or more second through holes penetrate the second member from the third surface to the fourth surface.

[0012] In one exemplary embodiment, in (b), a first conductive film is formed on at least a portion of the first member at one or both of the second surface and the one or more first through holes, and a second conductive film is formed on at least a portion of the second member at one or both of the third surface and the one or more second through holes.

[0013] In one exemplary embodiment, the apparatus further includes a substrate support including a substrate support surface, and the gas supply member is disposed above the substrate support such that the second member faces the substrate support, and a plasma processing space is defined between the substrate support and the gas supply member.

[0014] In one exemplary embodiment, the apparatus includes a substrate support including a substrate support surface, and gas supply members, a first gas supply member and a second gas supply member, the first gas supply member is disposed above the substrate support such that a second member of the first gas supply member faces the substrate support, the second gas supply member is disposed below the substrate support such that a second member of the second gas supply member faces the lower side of the substrate support, a plasma processing space is defined between the substrate support and the first gas supply member, and (a) a processing gas is supplied to the plasma processing space from one or both of the first gas supply member and the second gas supply member.

[0015] In one exemplary embodiment, the plasma processing apparatus further includes a substrate support including a substrate support surface and an antenna disposed above the substrate support so as to face the substrate support, a plasma processing space is defined between the substrate support and the antenna, and the gas supply member is disposed on a side of the plasma processing space so as to surround the plasma processing space.

[0016] In one exemplary embodiment, the first member and the second member are positioned such that the one or more first through holes overlap the one or more second through holes.

[0017] In one exemplary embodiment, a diameter of the one or more first through holes is smaller than a diameter of the one or more second through holes.

[0018] In one exemplary embodiment, the first member has a tapered shape at the end of the one or more first through holes on the second surface side such that the diameter of the one or more through holes increases toward the second surface.

[0019] In one exemplary embodiment, in (b), the first conductive film is formed on at least the portion of the first member that has a tapered shape.

[0020] In one exemplary embodiment, in (a), the process gas includes a hydrogen-containing gas.

[0021] In one exemplary embodiment, the hydrogen-containing gas is at least one selected from the group consisting of hydrogen gas, a hydrocarbon gas, and a hydrofluorocarbon gas.

[0022] In one exemplary embodiment, in (a), a processing gas is supplied to the plasma processing space through the first through-hole and the second through-hole.

[0023] In one exemplary embodiment, the apparatus further includes a substrate support, and the control unit is configured to further perform control of (c) generating a plasma in the plasma processing space to etch a first substrate disposed on the substrate support, where (c) is performed before (a) or after (b).

[0024] In one exemplary embodiment, the control unit is configured to further execute controls to set the pressure of the plasma processing space to a first pressure in (a) and (b), and to set the pressure of the plasma processing space to a second pressure lower than the first pressure in (c).

[0025] In one exemplary embodiment, the control unit is configured to further control placing a second substrate, different from the first substrate, on the substrate support, and (a) and (b) are performed with the second substrate placed on the substrate support.

[0026] In one exemplary embodiment, a plasma processing method is provided that is performed in a plasma processing apparatus. The plasma processing apparatus includes a chamber that defines a plasma processing space in which plasma is generated, and a gas supply member for supplying a processing gas into the chamber, the gas supply member including a first member including one or more first through holes, and a second member disposed between the first member and the plasma processing space, the second member being disposed apart from the first member and including one or more second through holes, and the plasma processing method includes a step of (a) supplying a processing gas into the plasma processing space, the processing gas including a gas including one or both of carbon and metal, and (b) generating plasma from the processing gas in the plasma processing space, the plasma generated from the processing gas forming a first conductive film including one or both of carbon and metal on at least a part of the first member, and forming a second conductive film including one or both of carbon and metal on at least a part of the second member.

[0027] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are given the same reference numerals, and duplicated explanations will be omitted. Unless otherwise specified, the positional relationship such as up, down, left, right, etc. will be described based on the positional relationship shown in the drawing. The dimensional ratio of the drawings does not indicate the actual ratio, and the actual ratio is not limited to the illustrated ratio.

[0028] FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas exhaust port is connected to an exhaust system 40 described later. The substrate support unit 11 is disposed in the plasma processing space, and has a substrate support surface for supporting a substrate.

[0029] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR plasma), a helicon wave plasma (HWP), or a surface wave plasma (SWP), etc. Also, various types of plasma generating units may be used, including an alternating current (AC) plasma generating unit and a direct current (DC) plasma generating unit. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Thus, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0030] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to execute various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0031] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining the configuration example of a capacitively coupled plasma processing apparatus.

[0032] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a part of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from a housing of the plasma processing chamber 10.

[0033] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0034] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one RF / DC electrode coupled to an RF power source 31 and / or a DC power source 32 described later may be disposed in the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Thus, the substrate support 11 includes at least one lower electrode.

[0035] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0036] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as a brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0037] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes at least one upper electrode. Note that the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0038] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include at least one flow modulation device to modulate or pulse a flow rate of the at least one process gas.

[0039] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0040] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0041] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0042] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0043] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular or combination of these pulse waveforms. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one period. The first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0044] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0045] The following describes a configuration example of an inductively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 3 is a diagram for explaining a configuration example of an inductively coupled plasma processing apparatus.

[0046] The inductively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing chamber 10 includes a dielectric window 101. The plasma processing apparatus 1 also includes a substrate support 11, a gas inlet, and an antenna 14. The substrate support 11 is disposed within the plasma processing chamber 10. The antenna 14 is disposed on or above the plasma processing chamber 10 (i.e., on or above the dielectric window 101). The plasma processing chamber 10 has a plasma processing space 10s defined by the dielectric window 101, a sidewall 102 of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded.

[0047] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0048] In one embodiment, the body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a bias electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power source 31 and / or a DC power source 32 described below may be disposed in the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple bias electrodes. Also, the electrostatic electrode 1111b may function as a bias electrode. Thus, the substrate support 11 includes at least one bias electrode.

[0049] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0050] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as a brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0051] The gas introduction unit is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. In one embodiment, the gas introduction unit includes a center gas injector (CGI) 13. The center gas injector 13 is disposed above the substrate support 11 and attached to a central opening formed in the dielectric window 101. The center gas injector 13 has at least one gas supply port 13a, at least one gas flow path 13b, and at least one gas inlet port 13c. The processing gas supplied to the gas supply port 13a passes through the gas flow path 13b and is introduced into the plasma processing space 10s from the gas inlet port 13c. Note that the gas introduction unit may include one or more side gas injectors (SGI) attached to one or more openings formed in the sidewall 102 in addition to or instead of the center gas injector 13.

[0052] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 to the gas inlet via a respective flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include at least one flow modulation device to modulate or pulse a flow rate of the at least one process gas.

[0053] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power) to at least one bias electrode and the antenna 14. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to the at least one bias electrode, a bias potential is generated on the substrate W, and ions in the formed plasma can be attracted to the substrate W.

[0054] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to the antenna 14 via at least one impedance matching circuit and configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 14.

[0055] The second RF generating unit 31b is coupled to at least one bias electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one bias electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0056] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a bias DC generator 32a. In one embodiment, the bias DC generator 32a is connected to at least one bias electrode and configured to generate a bias DC signal. The generated bias DC signal is applied to the at least one bias electrode.

[0057] In various embodiments, the bias DC signal may be pulsed. In this case, a sequence of voltage pulses is applied to at least one bias electrode. The voltage pulses may have a rectangular, trapezoidal, triangular or combination of these pulse waveforms. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the bias DC generator 32a and at least one bias electrode. Thus, the bias DC generator 32a and the waveform generator constitute a voltage pulse generator. The voltage pulses may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses within one period. Note that the bias DC generator 32a may be provided in addition to the RF power supply 31 or may be provided instead of the second RF generator 31b.

[0058] The antenna 14 includes one or more coils. In one embodiment, the antenna 14 may include an outer coil and an inner coil arranged coaxially. In this case, the RF power source 31 may be connected to both the outer coil and the inner coil, or to either the outer coil or the inner coil. In the former case, the same RF generator may be connected to both the outer coil and the inner coil, or separate RF generators may be connected to the outer coil and the inner coil separately.

[0059] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0060] Fig. 4 is a diagram showing an example of the configuration of the shower head 13 used in the capacitively coupled plasma processing apparatus shown in Fig. 2. The shower head 13 is an example of a gas supply member.

[0061] The gas supply member 15 may be configured to include a first member 131 and a second member 132. The first member 131 and the second member 132 may have a shape corresponding to the shape of the substrate supporting surface of the substrate support 11 in a plan view. As an example, the shape may be circular. The first member 131 and the second member 132 may be configured and / or arranged such that a gap 133 is formed therebetween.

[0062] The first member 131 may be configured to include a material having electrical conductivity. As an example, the material may be aluminum, silicon (Si), or the like. The material constituting the first member 131 may have a higher thermal conductivity than the material constituting the second member 132. The first member 131 may function as a member that cools the second member 132. The first member 131 may include a coating on a part or the whole of its surface. The coating may be formed by spraying an insulating material such as anodized aluminum, alumina, and / or yttria.

[0063] The gas diffusion chamber 13b is formed in the first member 131. A plurality of first through holes 13c-1 are also formed in the first member 131. One ends of the plurality of first through holes 13c-1 are connected to the gas diffusion chamber 13b. The other ends of the plurality of first through holes 13c-1 are connected to the gap 133.

[0064] A plurality of second through holes 13c-2 are formed in the second member 132. One ends of the plurality of second through holes 13c-2 are connected to the gap 133. The other ends of the plurality of second through holes 13c-2 are opened toward the plasma processing space 10s or the substrate support 11.

[0065] The second member 132 may be configured to include a material having electrical conductivity. As an example, the material may be aluminum, silicon (Si), or the like. The second member 132 may include a coating on a part or the whole of its surface. The coating may be formed by thermal spraying an insulating material such as anodized aluminum, alumina, and / or yttria.

[0066] The plurality of first through holes 13c-1 and the plurality of second through holes 13c-2 may constitute a gas introduction hole 13. A processing gas is supplied from a gas supply unit 20 to the gas diffusion chamber 13b. The processing gas supplied to the gas diffusion chamber 13b is supplied to the plasma processing space 10s via the plurality of first through holes 13c-1 and the plurality of second through holes 13c-2.

[0067] 5 and 6 are diagrams showing other examples of the gas supply member. In FIG. 5 and FIG. 6, a part of the sidewall 10a of the plasma processing chamber 10, a part of the substrate support 11, and a part of the baffle plate 45 are shown. In the following, for convenience of explanation, each example of the gas supply member including the shower head 13 is also called a "gas supply member 15." The gas supply member 15 can be disposed at any position in the plasma processing chamber 10 shown in FIG. 2 and FIG. 3.

[0068] In one embodiment, the gas supply member 15 is disposed on a sidewall 10a of the plasma processing chamber 10. The gas supply member 15 may be disposed in a portion of the sidewall 10a so as to surround the plasma processing space 10s and / or the substrate support 11, etc.

[0069] In one embodiment, the gas supply member 15 is disposed on the sidewall 10a at a side of the plasma processing space 10s as shown in Fig. 5. This position may be higher than the baffle plate 45 on the sidewall 10a (closer to the top of the plasma processing chamber 10 than the baffle plate 45). In one embodiment, the gas supply member 15 may be disposed lower than the baffle plate 45 on the sidewall 10a as shown in Fig. 6.

[0070] One or more gas supply members 15 may be arranged in the plasma processing chamber 10. As an example, the gas supply member 15 may be arranged at a position shown in Fig. 5 on the sidewall 10a of the inductively coupled plasma processing apparatus 1 shown in Fig. 3. As another example, the gas supply member 15 may be arranged as the shower head 13 in the capacitively coupled plasma processing apparatus 1 shown in Fig. 2, and may be arranged at a position shown in Fig. 6 on the sidewall 10a. In one embodiment, two or more gas supply members 15 may be arranged on the sidewall 10a.

[0071] Fig. 7 is an enlarged view of a portion of the gas supply member 15 shown in Figs. 4 to 6. More specifically, Fig. 7 is a view showing the configuration of one of the first through hole 13c-1 and the second through hole 13c-2 and their vicinity in the gas supply member 15. The other first through hole 13c-1 and the second through hole 13c-2 and their vicinity may be configured in the same manner as in Fig. 7.

[0072] As shown in FIG. 7, the first member 131 includes a surface TS1, a surface TS2, a surface SS2, and a surface SS2. The surface TS1 is an example of a first surface. The surface TS1 is a surface that defines a part of the gas diffusion chamber 13b. The surface TS2 is an example of a second surface. The surface TS2 is a surface of the first member 131 that faces the surface TS1. The first member 131 is disposed such that the surface TS2 faces the surface TS3 of the second member 132. The surface SS1 is a substantially cylindrical side surface formed on the first member 131. The surface SS1 is a surface that is continuous with the surface TS1 and is formed in a substantially perpendicular direction to the surface TS1. The surface SS1 defines a part of the first through hole 13c-1. The surface SS2 is a substantially conical side surface that is continuous with the surface SS1. That is, the surface SS2 has a shape in which the diameter increases toward the second member 132. The surface SS1 and the surface SS2 are formed from the surface TS1 to the surface TS2 so as to form the through-hole 13c-1 in the first member 131.

[0073] As shown in FIG. 7, the second member 132 includes a surface TS3, a surface TS4, and a surface SS3. The surface TS3 is an example of a third surface. The second member 132 is disposed so that the surface TS3 faces the surface TS2 of the first member 131. The surface TS4 is a surface of the second member 132 facing the surface TS3. In one embodiment, the second member 132 is disposed so that the surface TS4 faces the plasma processing space 10s. In one embodiment, the second member 132 is disposed so that the surface TS4 faces the substrate support 11 or a member disposed below the substrate support 11. The surface SS3 is a substantially cylindrical side surface formed on the second member 132. The surface SS3 is formed from the surface TS3 to the surface TS4 so as to form a through-hole 13c-2 in the second member 132.

[0074] The gas supply member 15 includes a conductive film 134-1 on the surfaces TS2, SS1, and SS2 of the first member 131. The conductive film 134-1 may be formed on a part or all of these surfaces. The gas supply member 15 also includes a conductive film 134-2 on the surfaces TS3 and SS3 of the second member 132. The conductive film 134-2 may be formed on a part or all of these surfaces. As an example, in FIG. 7, the conductive film 134-2 is formed on a part of the surface SS3. In one embodiment, the conductive film 134-2 may be formed on the entire surface SS3. The thickness of the conductive film 134-2 formed on each surface of the second member 132 may vary based on the deposition rate of the conductive film 134-2 on each surface and the etching rate of the conductive film 134-2 on each surface. As an example, the etching rate may be determined based on the number and / or energy of the active species AS incident on each surface.

[0075] The conductive films 134-1 and 134-2 may be configured to include the same material. The material may be a material including carbon and / or tungsten. The conductive films 134-1 and 134-2 may be configured and / or arranged to have the same potential or a potential close to each other. In one embodiment, the conductive films 134-1 and 134-2 may be configured to be electrically connected in the gas supply member 15. Hereinafter, the conductive films 134-1 and 134-2 may also be referred to as "conductive films 134".

[0076] The diameter of the second through hole 13c-2 may be larger than the diameter of the portion of the first through hole 13c-1 defined by the surface SS1. The diameter of the second through hole 13c-2 may be larger than, equal to, or smaller than the diameter of a portion of the portion of the first through hole 13c-1 defined by the surface SS2. The first through hole 13c-1 and the second through hole 13c-2 may be formed on the same axis. That is, the central axis of the first through hole 13c-1 may overlap with the central axis of the second through hole 13c-2.

[0077] In one embodiment, the gas supply member 15 is disposed to face the plasma processing space 10s. In this case, when plasma is generated in the plasma processing space 10s during etching of the substrate disposed on the substrate support 11, a plasma sheath PS is formed between the plasma and the gas supply member 15 (in FIG. 7, only a part of the boundary PB between the plasma and the plasma sheath PS is illustrated). When the active species AS in the plasma reach the boundary PB by diffusion, the active species AS are attracted to the gas supply member 15 by the electric field in the plasma sheath PS. When the active species AS passes through the second through hole 13c-2 and collides with the first member 131, secondary electrons are emitted from the first member 131. When the secondary electrons are emitted from the first member 131 and a potential difference exists between the first member 131 and the second member 132, the processing gas present between the first member 131 and the second member 132 may be dissociated to generate a discharge. If such a discharge occurs, defects such as dielectric breakdown may occur in the first member 131 and / or the second member 132. On the other hand, in this embodiment, since the conductive films 134-1 and 134-2 are formed on the first member 131 and the second member 132, respectively, the first member 131 and the second member 132 have the same potential or a similar potential. This makes it possible to suppress the occurrence of a discharge between the first member 131 and the second member 132.

[0078] In one embodiment, the conductive film 134-1 and the conductive film 134-2 may be formed in the plasma processing apparatus 1. An example of forming the conductive film 134-1 and the conductive film 134-2 on the gas supply member 15 in the plasma processing apparatus 1 will be described below.

[0079] FIG. 8 is a flow chart showing an example of a plasma processing method (hereinafter, also referred to as "the method"). The method includes a step (ST1) of etching a substrate and a step (ST2) of forming a conductive film on a gas supply member. Step ST2 includes a step (ST21) of supplying a processing gas, a step (ST22) of adjusting a pressure, and a step (ST23) of supplying an RF signal. The order in which steps ST21 to ST23 are started can be set arbitrarily. Steps ST21 to ST23 may be started substantially simultaneously. Parameters set in steps ST21 and ST22 may be maintained in the processing of step ST2. As an example, the parameters may include a flow rate of the processing gas and a pressure in the plasma processing chamber 10. Each step in the method may be performed by the control unit 2 controlling each unit of the plasma processing apparatus 1 shown in FIG. 2 or FIG. 3.

[0080] In step ST1, a substrate W is etched. The substrate W may be a substrate on which a semiconductor device is formed. As an example, the substrate W may be a substrate in which a dielectric film, a metal film, etc. are formed on a semiconductor substrate such as a silicon wafer. The substrate W on which the etching process is performed in step ST1 is an example of a first substrate.

[0081] In step ST1, the substrate W may be etched by plasma etching. That is, first, in the plasma processing apparatus 1, a processing gas is supplied into the plasma processing chamber 10. Then, when a source RF signal is supplied to the upper electrode or the lower electrode in FIG. 2 or the antenna 14 in FIG. 3, plasma is generated from the processing gas in the plasma processing chamber 10. Then, the substrate W is etched by the plasma generated in the plasma processing chamber 10. At this time, a bias signal may be supplied to the substrate support 11 of the plasma processing apparatus 1.

[0082] Next, in step ST2, the conductive film 134 is formed on the gas supply member 15. In one embodiment, the step ST2 may be started based on a predetermined parameter. In one embodiment, the step ST2 may be executed after the step ST1 is repeatedly executed. In this case, the predetermined parameter may be the number of substrates W etched in the step ST1. Then, the step ST2 may be started after the number reaches a predetermined number. Also, the predetermined parameter may be the time during which the etching is executed in the step ST1. Then, the step ST2 may be started after the time reaches a predetermined time. Also, the predetermined parameter may be the thickness of the conductive film 134 on the gas supply member 15. Then, the step ST2 may be started after the thickness of the conductive film 134 becomes thinner than the predetermined thickness. As an example, the thickness of the conductive film 134 may be measured by an optical emission spectrometer (OES). The thickness of the conductive film 134 may be measured in a state in which the gas supply member 15 is installed in the plasma processing device 1. Each step included in step ST2 will be described below.

[0083] In step ST21, a process gas is supplied into the plasma processing chamber 10. The process gas may include a gas capable of forming the conductive film 134. In one embodiment, the process gas may include a carbon-containing gas and / or a metal-containing gas.

[0084] In step ST21, the carbon-containing gas contained in the processing gas may be a fluorocarbon gas and / or a hydrofluorocarbon gas. The fluorocarbon gas may be, for example, at least one selected from the group consisting of CF4 gas, C2F2 gas, C2F4 gas, C3F6 gas, C3F8 gas, C4F6 gas, C4F8 gas, and C5F8 gas. The hydrofluorocarbon gas may be, for example, CHF3 gas, CH2F2 gas, CH3F gas, C2HF5 gas, C2H2F4 gas, C2H3F3 gas, C2H4F2 gas, C3HF7 gas, C3H2F2 gas, C3H2F4 gas, C3H2F6 gas, C3H3F5 gas, C4H2F6 gas, C4H5F5 gas, C4H2F8 gas, C5H2F6 gas, C5H2F 10 The carbon-containing gas may be at least one selected from the group consisting of C5H3F7 gas and C5H3F7 gas. In one embodiment, the carbon-containing gas is a linear gas having an unsaturated bond. Such gas may be, for example, C3F6 (hexafluoropropene) gas, C4F8 (octafluoro-1-butene, octafluoro-2-butene) gas, C3H2F4 (1,3,3,3-tetrafluoropropene) gas, C4H2F6 (trans-1,1,1,4,4,4-hexafluoro-2-butene) gas, C4F8O (pentafluoroethyl trifluorovinyl ether) gas, CF3COF gas (1,2,2,2-tetrafluoroethane-1-one), CHF2COF (difluoroacetic acid fluoride) gas, and COF2 (carbonyl fluoride) gas.

[0085] In step ST21, the carbon-containing gas contained in the processing gas may be a hydrocarbon gas. n H 2n+2 (methane-based hydrocarbons, n is a positive integer) gas.

[0086] The metal-containing gas contained in the processing gas in step ST21 may be a gas containing at least one metal (hereinafter also referred to as "metal M") selected from the group consisting of tungsten (W), molybdenum (Mo), ruthenium (Ru), tin (Sn), titanium (Ti), tantalum (Ta), hafnium (Hf), chromium (Cr) and germanium (Ge). The gas containing metal M may be a gas containing an oxide, nitride, sulfide or halide of metal M. For example, the processing gas may be a gas containing a halide of metal M or a gas containing a fluoride of metal M. In one example, the processing gas may contain a WF6-containing gas, WCl6 gas, or the like. In one example, the metal-containing gas may be WF2 gas, WF4 gas, WF5 gas, WF6 gas, WCl2 gas, WCl4 gas, WCl5 gas, WCl6 gas, MoF4 gas, MoCl6 gas, TiCl4 gas, or the like. In one example, the metal-containing gas may be RuO3 gas, RuO4 gas, RuF5 gas, or RuF6 gas.

[0087] In step ST21, the processing gas may further contain a hydrogen-containing gas, which can capture fluorine in the processing gas and increase the conductivity of the conductive film 134. As an example, the hydrogen-containing gas can be hydrogen gas (H2).

[0088] In one embodiment, the process gas further comprises an inert gas, which may be, for example, a noble gas such as Ar gas, He gas, and Kr gas, or nitrogen gas.

[0089] In step ST22, the relative pressure difference (hereinafter also referred to as "relative pressure difference") between the pressure in the plasma processing space 10s and the pressure in the internal space of the gas supply member 15 is adjusted. This allows the processing gas or the active species generated from the processing gas to be diffused more efficiently in the gas supply member 15. As an example, the relative pressure difference may be the pressure difference between the pressure in the first through hole 13c-1, the second through hole 13c-2, and / or the gap 133 of the gas supply member 15 and the pressure in the plasma processing space 10s. In one embodiment, the pressure in the plasma processing space 10s or the pressure in the internal space of the gas supply member 15 may be adjusted in step ST22 so that the relative pressure difference in step ST2 is smaller than the relative pressure difference in step ST1.

[0090] In one embodiment, the adjustment of the relative pressure difference can be performed by controlling the exhaust amount of the plasma processing chamber 10. The exhaust amount can be controlled by controlling the opening degree of the pressure regulating valve in the exhaust system 40. In one embodiment, the opening degree of the pressure regulating valve in the step ST2 may be smaller than the opening degree of the pressure regulating valve in the step ST1. That is, the exhaust speed in the step ST2 may be slower than the exhaust speed in the step ST1. As a result, the pressure in the plasma processing space 10s in the step ST2 may be higher than the pressure in the plasma processing space 10s in the step ST1. Then, the relative pressure difference in the step ST2 is smaller than that in the step ST1, and the amount of gas flowing from the gas supply member 15 into the plasma processing space 10s is smaller. Therefore, in the step ST2, the processing gas or the activated species generated from the processing gas can be diffused more efficiently in the gas supply member 15.

[0091] In one embodiment, the relative pressure difference may be adjusted by controlling the amount of processing gas supplied to the plasma processing chamber 10. In one embodiment, the flow rate of the processing gas supplied to the plasma processing chamber 10 in step ST2 may be set to be lower than the flow rate of the processing gas supplied to the plasma processing chamber 10 in step ST1. As a result, the pressure in the internal space of the gas supply member 15 in step ST2 is lower than the pressure in the internal space of the gas supply member 15 in step ST1. Then, the relative pressure difference is smaller in step ST2 than in step ST1, and the amount of gas flowing from the gas supply member 15 to the plasma processing space 10s is smaller. Therefore, the processing gas or the activated species generated from the processing gas can be diffused more efficiently in the gas supply member 15.

[0092] In step ST23, a source RF signal is supplied. The source RF signal may be supplied to the upper electrode or the lower electrode in FIG. 2, or the antenna 14 in FIG. 3. When the source RF signal is supplied, plasma is generated from the processing gas in the plasma processing chamber 10. When the plasma is generated, active species in the plasma may reach the first through-hole 13c-1, the second through-hole 13c-2, and / or the gap 133 of the gas supply member 15 by a sheath electric field and / or diffusion. As a result, a conductive film 134 is formed on the first member 131 and the second member 132.

[0093] After step ST2 is performed, step ST1 may be further performed. Moreover, steps ST1 and ST2 may be repeatedly performed.

[0094] In one embodiment, step ST23 may be omitted, that is, the conductive film 134 may be formed from the processing gas supplied in step ST21 without generating plasma.

[0095] Moreover, step ST2 may be performed in a state where the substrate is placed on the substrate support part 11. The substrate is an example of a second substrate. The substrate may be a dummy substrate.

[0096] In addition, in one embodiment, when by-products are deposited on the surfaces of the first member 131 and / or the second member 132 in step ST1, the conductive film 134 may be formed to cover the by-products in step ST2. The by-products may be insulating deposits.

[0097] According to an embodiment of the present disclosure, since the conductive film 134 is formed on the first member 131 and the second member 132, it is possible to reduce the potential difference generated between the first member 131 and the second member 132. This makes it possible to suppress the occurrence of discharge between the first member 131 and the second member 132. This makes it possible to reduce the occurrence of dielectric breakdown on the surfaces of the first member 131 and / or the second member 132.

[0098] The present disclosure may include, for example, the following configurations.

[0099] (Appendix 1) A plasma processing apparatus comprising: a chamber defining a plasma processing space in which a plasma is generated; a gas supply member for supplying a process gas into the chamber; Control unit and Equipped with The gas supply member is a first member including one or more first through holes; a second member disposed between the first member and the plasma processing space, the second member being spaced apart from the first member, the second member including one or more second through holes; Including, The control unit is (a) controlling a supply of a processing gas to the plasma processing space, the processing gas including a gas containing one or both of carbon and metal; (b) controlling a plasma generated from the processing gas in the plasma processing space, the plasma being controlled so that a first conductive film containing one or both of carbon and metal is formed on at least a portion of the first member by the plasma generated from the processing gas, and a second conductive film containing one or both of carbon and metal is formed on at least a portion of the second member; The plasma processing apparatus is configured to perform the steps of:

[0100] (Appendix 2) 2. The plasma processing apparatus of claim 1, wherein the first member includes a first surface and a second surface that is a surface opposite to the first surface, the first member is arranged so that the second surface faces the second member, and the one or more first through holes penetrate the first member from the first surface to the second surface.

[0101] (Appendix 3) The plasma processing apparatus of claim 2 or 3, wherein the second member includes a third surface and a fourth surface that is a surface opposite to the third surface, the second member is arranged such that the third surface faces the second surface and the fourth surface faces the plasma processing space, and the one or more second through holes penetrate the second member from the third surface to the fourth surface.

[0102] (Appendix 4) The plasma processing apparatus of any one of appendixes 1 to 3, wherein in (b), the first conductive film is formed on at least a portion of the first member at one or both of the second surface and the one or more first through holes, and the second conductive film is formed on at least a portion of the second member at one or both of the third surface and the one or more second through holes.

[0103] (Appendix 5) a substrate support including a substrate support surface; the gas supply member is disposed above the substrate support such that the second member faces the substrate support; 5. The plasma processing apparatus according to claim 1, wherein the plasma processing space is defined between the substrate support and the gas supply member.

[0104] (Appendix 6) a substrate support including a substrate support surface; The gas supply members are a first gas supply member and a second gas supply member; Equipped with the first gas supply member is disposed above the substrate support such that the second member of the first gas supply member faces the substrate support; the second gas supply member is disposed below the substrate support such that the second member of the second gas supply member faces a lower portion of the substrate support; the plasma processing space is defined between the substrate support and the first gas supply member; 5. The plasma processing apparatus according to claim 1, wherein in (a), the processing gas is supplied to the plasma processing space from one or both of the first gas supply member and the second gas supply member.

[0105] (Appendix 7) a substrate support including a substrate support surface; an antenna disposed above the substrate support portion so as to face the substrate support portion; Further comprising: The plasma processing space is defined between the substrate support and the antenna; 5. The plasma processing apparatus according to claim 1, wherein the gas supply member is disposed on a side of the plasma processing space so as to surround the plasma processing space.

[0106] (Appendix 8) The plasma processing apparatus according to any one of claims 1 to 7, wherein the first member and the second member are arranged such that the one or more first through holes overlap with the one or more second through holes.

[0107] (Appendix 9) 9. The plasma processing apparatus of claim 8, wherein a diameter of the one or more first through holes is smaller than a diameter of the one or more second through holes.

[0108] (Appendix 10) 9. The plasma processing apparatus of claim 8, wherein the first member has a tapered shape at an end of the one or more first through holes on the second surface side such that a diameter of the one or more through holes increases toward the second surface.

[0109] (Appendix 11) 11. The plasma processing apparatus according to claim 10, wherein in (b), the first conductive film is formed on at least a portion of the first member having the tapered shape.

[0110] (Appendix 12) 12. The plasma processing apparatus according to claim 1, wherein in (a), the processing gas contains a hydrogen-containing gas.

[0111] (Appendix 13) 13. The plasma processing apparatus according to claim 12, wherein the hydrogen-containing gas is at least one selected from the group consisting of hydrogen gas, a hydrocarbon gas, and a hydrofluorocarbon gas.

[0112] (Appendix 14) 14. The plasma processing apparatus according to any one of claims 1 to 13, wherein in (a), the processing gas is supplied to the plasma processing space via the first through hole and the second through hole.

[0113] (Appendix 15) Further comprising a substrate support, The control unit is further configured to (c) control generating a plasma in the plasma processing space to etch a first substrate disposed on the substrate support; 2. The plasma processing apparatus according to claim 1, wherein (c) is performed before (a) or after (b).

[0114] (Appendix 16) The control unit is Controlling the pressure in the plasma processing space in (a) and (b) to a first pressure; In the step (c), a pressure in the plasma processing space is controlled to be a second pressure lower than the first pressure; 16. The plasma processing apparatus of claim 15, further configured to perform

[0115] (Appendix 17) the control unit is configured to further execute control to place a second substrate, different from the first substrate, on the substrate support unit; 17. The plasma processing apparatus according to claim 15, wherein (a) and (b) are performed in a state where the second substrate is disposed on the substrate support.

[0116] (Appendix 18) A plasma processing method performed in a plasma processing apparatus, comprising: The plasma processing apparatus includes: a chamber defining a plasma processing space in which a plasma is generated; a gas supply member for supplying a process gas into the chamber; Equipped with The gas supply member is a first member including one or more first through holes; a second member disposed between the first member and the plasma processing space, the second member being spaced apart from the first member, the second member including one or more second through holes; Including, The plasma processing method includes: (a) supplying a processing gas to the plasma processing space, the processing gas including a gas containing one or both of carbon and metal; (b) generating plasma from the processing gas in the plasma processing space, the plasma generating from the processing gas forming a first conductive film containing one or both of carbon and metal on at least a portion of the first member, and forming a second conductive film containing one or both of carbon and metal on at least a portion of the second member; A plasma processing method comprising:

[0117] The above exemplary embodiments may be modified in various ways without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment may be added to other embodiments within the scope of ordinary creativity of a person skilled in the art. Also, some components in one embodiment may be replaced with corresponding components in other embodiments. [Explanation of symbols]

[0118] REFERENCE SIGNS LIST 1: plasma processing apparatus, 2: control section, 10s: plasma processing space, 11: substrate support section, 13c-1: first through-hole, 13c-2: second through-hole, 14: antenna, 15: gas supply member, 131: first member, 132: second member, 134: conductive film, W: substrate

Claims

1. A plasma processing apparatus comprising: a chamber defining a plasma processing space in which a plasma is generated; a gas supply member for supplying a process gas into the chamber; Control unit and Equipped with The gas supply member is a first member including one or more first through holes; a second member disposed between the first member and the plasma processing space, the second member being spaced apart from the first member, the second member including one or more second through holes; Including, The control unit is (a) controlling a supply of a processing gas to the plasma processing space, the processing gas including a gas containing one or both of carbon and metal; (b) controlling a plasma generated from the processing gas in the plasma processing space, the plasma being controlled so that a first conductive film containing one or both of carbon and metal is formed on at least a portion of the first member by the plasma generated from the processing gas, and a second conductive film containing one or both of carbon and metal is formed on at least a portion of the second member; The plasma processing apparatus is configured to perform the steps of:

2. 2. The plasma processing apparatus of claim 1, wherein the first member includes a first surface and a second surface that is a surface opposite to the first surface, the first member is arranged so that the second surface faces the second member, and the one or more first through holes penetrate the first member from the first surface to the second surface.

3. 3. The plasma processing apparatus of claim 2, wherein the second member includes a third surface and a fourth surface that is a surface opposite to the third surface, the second member is arranged such that the third surface faces the second surface and the fourth surface faces the plasma processing space, and the one or more second through holes penetrate the second member from the third surface to the fourth surface.

4. 4. The plasma processing apparatus of claim 3, wherein in (b), the first conductive film is formed on at least a portion of the first member at one or both of the second surface and the one or more first through holes, and the second conductive film is formed on at least a portion of the second member at one or both of the third surface and the one or more second through holes.

5. a substrate support including a substrate support surface; the gas supply member is disposed above the substrate support such that the second member faces the substrate support; The plasma processing apparatus of claim 1 , wherein the plasma processing space is defined between the substrate support and the gas supply member.

6. a substrate support including a substrate support surface; a first gas supply member and a second gas supply member, which are the gas supply members; Equipped with the first gas supply member is disposed above the substrate support such that the second member of the first gas supply member faces the substrate support; the second gas supply member is disposed below the substrate support such that the second member of the second gas supply member faces a lower portion of the substrate support; the plasma processing space is defined between the substrate support and the first gas supply member; 2. The plasma processing apparatus of claim 1, wherein in (a), the processing gas is supplied to the plasma processing space from one or both of the first gas supply member and the second gas supply member.

7. a substrate support including a substrate support surface; an antenna disposed above the substrate support portion so as to face the substrate support portion; Further comprising: The plasma processing space is defined between the substrate support and the antenna; The plasma processing apparatus according to claim 1 , wherein the gas supply member is disposed on a side of the plasma processing space so as to surround the plasma processing space.

8. The plasma processing apparatus of claim 1 , wherein the first member and the second member are arranged such that the one or more first through holes overlap the one or more second through holes.

9. The plasma processing apparatus of claim 8 , wherein a diameter of the one or more first through holes is smaller than a diameter of the one or more second through holes.

10. 9. The plasma processing apparatus of claim 8, wherein the first member has a tapered shape at an end of the one or more first through holes on the second surface side such that a diameter of the one or more through holes increases toward the second surface.

11. The plasma processing apparatus according to claim 10 , wherein in (b), the first conductive film is formed on at least a portion of the first member having the tapered shape.

12. The plasma processing apparatus of claim 1 , wherein in (a), the processing gas includes a hydrogen-containing gas.

13. 13. The plasma processing apparatus of claim 12, wherein the hydrogen-containing gas is at least one selected from the group consisting of hydrogen gas, a hydrocarbon gas, and a hydrofluorocarbon gas.

14. 2. The plasma processing apparatus of claim 1, wherein in (a), the processing gas is supplied to the plasma processing space via the first through hole and the second through hole.

15. Further comprising a substrate support, the control unit is further configured to (c) control generating a plasma in the plasma processing space to etch a first substrate disposed on the substrate support; The plasma processing apparatus of claim 1 , wherein the step (c) is performed before the step (a) or before the step (b).

16. The control unit is Controlling the pressure in the plasma processing space in (a) and (b) to a first pressure; In the step (c), a pressure in the plasma processing space is controlled to be a second pressure lower than the first pressure; The plasma processing apparatus of claim 15 further configured to perform:

17. the control unit is configured to further execute control to place a second substrate, different from the first substrate, on the substrate support unit; The plasma processing apparatus of claim 15 , wherein steps (a) and (b) are performed with the second substrate disposed on the substrate support.

18. A plasma processing method performed in a plasma processing apparatus, comprising: The plasma processing apparatus includes: a chamber defining a plasma processing space in which a plasma is generated; a gas supply member for supplying a process gas into the chamber; Equipped with The gas supply member is a first member including one or more first through holes; a second member disposed between the first member and the plasma processing space, the second member being spaced apart from the first member, the second member including one or more second through holes; Including, The plasma processing method includes: (a) supplying a process gas to the plasma processing space, the process gas including a gas containing one or both of carbon and metal; (b) generating plasma from the processing gas in the plasma processing space, the plasma generating from the processing gas forming a first conductive film containing one or both of carbon and metal on at least a portion of the first member, and forming a second conductive film containing one or both of carbon and metal on at least a portion of the second member; A plasma processing method comprising:

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