Plasma processing apparatus and shower head

Abstract

To generate a high-density radical.SOLUTION: A plasma processing apparatus includes: a processing container; a substrate holding part; a gas supply part; a magnetic wave generator; a magnetic wave supply part; and a shower head. The processing container comprises: a processing chamber that provides a processing space of the substrate; and a reaction chamber that provides a space where a plasma is generated. The substrate holding part holds the substrate in the processing chamber. The gas supply part supplies a reaction chamber with a processing gas. The magnetic wave generator generates a magnetic wave for a plasma excitation supplied into the reaction chamber. The magnetic wave supply part supplies the magnetic wave into a reaction chamber. The shower head separates the processing chamber and the reaction chamber, and can be resonated with a magnetic component of the magnetic wave. The size is smaller than a wavelength of the magnetic wave. The shower head comprises: a resonance arrangement structure that contains a plurality of resonators arranged to a direction of the same plan surface; and a penetration hole that is communicated to the processing chamber and the reaction chamber. The shower head supplies a radical contained in a plasma generated on the reaction chamber side to the processing chamber by a penetration hole.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a plasma processing apparatus and a showerhead. [Background technology]

[0002] The method disclosed in Patent Document 1 includes providing a substrate in a reaction chamber, depositing a silicon carbide film of a first thickness on the substrate, exposing the silicon carbide film of the first thickness to a remote hydrogen plasma treatment in which the silicon carbide film of the first thickness is densified, depositing a silicon carbide film of a second thickness on the silicon carbide film of the first thickness, and exposing the silicon carbide film of the second thickness to a remote hydrogen plasma treatment in which the silicon carbide film of the second thickness is densified. The showerhead disclosed in Patent Document 2 includes a head and a magnetic field generating unit. The head has a first surface and a second surface located opposite to the first surface, and a chamber is provided therein, and a plurality of holes are provided, each of which opens on the first surface and the second surface facing the chamber and communicates with the chamber. The magnetic field generating unit is configured to generate a magnetic field between the first surface and the second surface inside the plurality of holes. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2020-502797 [Patent Document 2] JP 2019-054164 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a plasma processing apparatus and a showerhead capable of generating high density radicals. [Means for solving the problem]

[0005] A plasma processing apparatus according to an aspect of the present disclosure includes a processing vessel, a substrate holding unit, a gas supply unit, an electromagnetic wave generator, an electromagnetic wave supply unit, and a shower head. The processing vessel is configured to include a processing chamber that provides a processing space for the substrate, and a reaction chamber that provides a space for generating plasma. The substrate holding unit is configured to hold the substrate in the processing chamber. The gas supply unit is configured to supply a processing gas into the reaction chamber. The electromagnetic wave generator is configured to generate electromagnetic waves for plasma excitation that are supplied into the reaction chamber. The electromagnetic wave supply unit is configured to supply the electromagnetic waves into the reaction chamber. The shower head is configured to separate the processing chamber and the reaction chamber, and to include a resonator array structure including a plurality of resonators that are capable of resonating with a magnetic field component of the electromagnetic waves, have a size smaller than the wavelength of the electromagnetic waves, and are arranged in the same plane direction, and a through hole that communicates between the processing chamber and the reaction chamber. The shower head supplies radicals contained in the plasma generated on the reaction chamber side to the processing chamber side through the through hole. Effect of the Invention

[0006] According to the present disclosure, high-density radicals can be generated. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to a first embodiment. [Diagram 2] FIG. 2 is a plan view showing an example of the configuration of the support member and the resonator array structure according to the first embodiment viewed from above. [Diagram 3] FIG. 3 is a diagram illustrating an example of the configuration of a card-shaped resonator according to the first embodiment. [Figure 4] FIG. 4 is a diagram illustrating an example of the configuration of a card-shaped resonator according to the first embodiment. [Diagram 5] FIG. 5 is a diagram showing another example of the configuration of the card-shaped resonator according to the first embodiment. [Figure 6] FIG. 6 is a diagram showing an example of a cross section of a card-shaped resonator according to the first embodiment. [Figure 7] FIG. 7 is a diagram showing an example of the relationship between the S21 value of a card-shaped resonator and the microwave frequency. [Figure 8] FIG. 8 is a diagram illustrating an example of the resonant frequency of the resonator according to the first embodiment. [Figure 9] FIG. 9 is a perspective view illustrating an example of a resonator array structure according to the first embodiment. [Figure 10] FIG. 10 is a diagram showing an example of a plasma generation region and a high-density radical region in a part of the AA cross section of FIG. [Figure 11] FIG. 11 is a diagram showing an example of a part of a cross section of a resonator array according to the first modification. [Figure 12] FIG. 12 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the second embodiment. [Figure 13] FIG. 13 is a plan view showing an example of the configuration of a support member and a resonator array structure according to the second embodiment viewed from above. [Figure 14] FIG. 14 is a cross-sectional view showing an example of the cross section taken along line BB of FIG. [Figure 15] FIG. 15 is a diagram illustrating an example of a plane and a CC cross section of a single resonator according to the second embodiment. [Figure 16] FIG. 16 is a cross-sectional view showing an example of the cross section taken along the line DD in FIG. [Figure 17] FIG. 17 is a cross-sectional view showing an example of an E-E cross section of FIG. [Figure 18] FIG. 18 is a diagram showing another example of the plane and CC cross section of the single resonator according to the second embodiment. [Figure 19] FIG. 19 is a diagram showing an example of a plasma generation region and a high-density radical region in a part of the cross section taken along the line BB in FIG. [Figure 20] FIG. 20 is a diagram showing an example of the relationship between the position of the ring member and the plasma generation region. [Figure 21] FIG. 21 is a diagram showing an example of the relationship between the position of the ring member and the plasma generation region. [Figure 22]FIG. 22 is a diagram showing an example of the relationship between the position of the shield and the plasma generation region. [Diagram 23] FIG. 23 is a diagram showing an example of a part of a cross section of a resonator array structure according to the second modification. [Figure 24] FIG. 24 is a schematic cross-sectional view showing an example of the configuration of an apparatus main body according to Modification 3. As shown in FIG. [Diagram 25] FIG. 25 is a schematic cross-sectional view showing an example of the configuration of an apparatus main body according to the fourth modification. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, embodiments of the disclosed plasma processing apparatus and shower head will be described in detail with reference to the drawings. Note that the disclosed technology is not limited to the following embodiments.

[0009] In a plasma processing apparatus using microwaves for plasma excitation, the power of the microwaves supplied to the processing vessel may be increased in order to increase the electron density of the plasma. The higher the power of the microwaves supplied to the processing vessel, the higher the electron density of the plasma can be.

[0010] Here, it is known that when the power of the microwave supplied into the processing vessel is increased and the plasma electron density reaches a certain upper limit, the dielectric constant of the space inside the processing vessel becomes negative. This upper limit of the electron density is appropriately called the "cutoff density." In addition, the refractive index is known as an index indicating whether or not microwaves propagate through space. The refractive index N is expressed by the following formula (1). N = √ε√μ (1) where ε is the dielectric constant and μ is the magnetic permeability

[0011] Since the magnetic permeability is generally positive, when the dielectric constant of the space in the processing vessel becomes negative, the refractive index of the space in the processing vessel becomes a pure imaginary number according to the above formula (1). As a result, the microwave is attenuated and cannot propagate through the space in the processing vessel. When the electron density of the plasma reaches the cutoff density, the microwave cannot propagate through the space in the processing vessel, and the microwave power is not sufficiently absorbed by the plasma. As a result, there is a problem that the densification of a wide range of the plasma generated in the processing vessel is hindered. Note that, although the microwave has been described as an example in the above, the same problem occurs in a plasma processing apparatus using electromagnetic waves in the very high frequency (VHF) to ultra high frequency (UHF) bands.

[0012] In addition, in a plasma processing apparatus, in order to improve the in-plane uniformity, the distribution of the processing gas introduced into the chamber may be controlled using a shower plate to generate plasma. However, the gas distribution may change due to the energy when generating plasma from the distribution-controlled processing gas, and the uniformity of the processing may decrease. Furthermore, in a plasma processing apparatus, the plasma generated in the plasma generation chamber may be introduced into the chamber using a shower plate to control the distribution of the plasma. However, in so-called remote plasma, the distance between the plasma source and the substrate to be processed is long, so the plasma may diffuse and the plasma density (radical density) may decrease. In addition, when the processing gas or plasma passes through the through holes of the shower plate, reflection, disappearance, and recombination due to collision of ions and radicals may occur, and the plasma density (radical density) may decrease. With such low-density radicals, the speed of substrate processing may decrease. Therefore, it is expected to generate high-density radicals.

[0013] (First embodiment) [Configuration of plasma processing device] 1 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus 1 according to the first embodiment. The plasma processing apparatus 1 includes an apparatus body 10 and a control device 11. The apparatus body 10 includes a processing container 12, a stage 14, a microwave output device (an example of an electromagnetic wave generator) 16, an antenna 18, a dielectric window 20, and a resonator array structure 100.

[0014] The processing vessel 12 is formed in a substantially cylindrical shape from, for example, aluminum whose surface is anodized, and provides a substantially cylindrical processing space S and generation space T inside. The processing space S is an example of a processing chamber, and the generation space T is an example of a reaction chamber. The processing vessel 12 is safety grounded. The processing vessel 12 has a side wall 12a and a bottom 12b. The central axis of the side wall 12a is defined as axis Z. The bottom 12b is provided on the lower end side of the side wall 12a. An exhaust port 12h for exhaust is provided on the bottom 12b. The upper end of the side wall 12a is open. The inner wall surface of the side wall 12a faces the processing space S and the generation space T. That is, the side wall 12a is provided with the inner wall surface facing the processing space S and the generation space T.

[0015] The side wall 12a is provided with an opening 12c for loading / unloading the workpiece WP. The opening 12c is opened and closed by a gate valve G.

[0016] A dielectric window 20 is provided at the upper end of the side wall 12a, and closes the opening at the upper end of the side wall 12a from above. A lower surface 20a of the dielectric window 20 faces the generation space T. That is, the dielectric window 20 is provided with the lower surface 20a facing the generation space T. An O-ring 19 is disposed between the dielectric window 20 and the upper end of the side wall 12a.

[0017] The stage 14 is accommodated in the processing vessel 12. The stage 14 is disposed so as to face a resonator array structure 100, which also serves as a shower head, in the direction of the axis Z. The space between the stage 14 and the resonator array structure 100 is a processing space S. A workpiece WP is placed on the stage 14.

[0018] The stage 14 includes a base 14a and an electrostatic chuck 14c. The base 14a is made of a conductive material such as aluminum and has a generally disk-like shape. The base 14a is disposed in the processing vessel 12 such that the central axis of the base 14a generally coincides with the axis Z.

[0019] The base 14a is supported by a cylindrical support 48 made of an insulating material and extending in the Z-axis direction. A conductive cylindrical support 50 is provided on the outer periphery of the cylindrical support 48. The cylindrical support 50 extends from the bottom 12b of the processing vessel 12 toward the dielectric window 20 along the outer periphery of the cylindrical support 48. An annular exhaust path 51 is formed between the cylindrical support 50 and the side wall 12a. The stage 14 may be configured to be movable in the vertical direction (Z-axis direction) by a driving mechanism (not shown) so that the distance between the lower surface of the resonator array structure 100 and the upper surface of the electrostatic chuck 14c can be changed. This allows the energy level to be adjusted by the residence time.

[0020] An annular baffle plate 52 having a plurality of through holes formed in the thickness direction is provided at the top of the exhaust path 51. The above-mentioned exhaust port 12h is provided below the baffle plate 52. An exhaust device 56 having a vacuum pump such as a turbo molecular pump and an automatic pressure control valve is connected to the exhaust port 12h via an exhaust pipe 54. The exhaust device 56 can reduce the pressure in the processing space S and the generation space T to a desired vacuum level.

[0021] The base 14a functions as a high-frequency electrode. A high-frequency power supply 58 for RF bias is electrically connected to the base 14a via a power supply rod 62 and a matching unit 60. The high-frequency power supply 58 supplies, via the matching unit 60 and the power supply rod 62, to the base 14a, bias power of a predetermined frequency (e.g., 13.56 MHz) suitable for controlling the energy of ions attracted to the workpiece WP.

[0022] The matching unit 60 contains a matcher for matching the impedance on the high frequency power supply 58 side with the impedance on the load side, mainly the electrodes, plasma, and processing vessel 12. The matcher includes a blocking capacitor for generating a self-bias. If an RF bias is not used, the high frequency power supply 58, the matching unit 60, and the power feed rod 62 may be omitted.

[0023] An electrostatic chuck 14c is provided on the upper surface of the base 14a. The electrostatic chuck 14c attracts and holds the workpiece WP by electrostatic force. The electrostatic chuck 14c has a substantially disk-shaped outer shape, and includes an electrode 14d, an insulating film (dielectric film) 14e, and an insulating film (dielectric film) 14f. The electrostatic chuck 14c is disposed on the upper surface of the base 14a so that the central axis of the electrostatic chuck 14c substantially coincides with the axis Z. The electrode 14d of the electrostatic chuck 14c is made of a conductive film and is provided between the insulating film 14e and the insulating film 14f. A DC power supply 64 is electrically connected to the electrode 14d via a covered wire 68 and a switch 66. The electrostatic chuck 14c can attract and hold the workpiece WP on its upper surface by electrostatic force generated by a DC voltage applied from the DC power supply 64. The upper surface of the electrostatic chuck 14c is a mounting surface on which the workpiece WP is mounted, and faces the processing space S. That is, the electrostatic chuck 14c is provided with its upper surface, which is a mounting surface, facing the processing space S. In addition, an edge ring 14b is provided on the base 14a. The edge ring 14b is disposed so as to surround the workpiece WP and the electrostatic chuck 14c. The edge ring 14b is also called a focus ring.

[0024] A flow path 14g is provided inside the base 14a. A coolant is supplied to the flow path 14g from a chiller unit (not shown) via a pipe 70. The coolant supplied to the flow path 14g is returned to the chiller unit via a pipe 72. The coolant, the temperature of which is controlled by the chiller unit, circulates through the flow path 14g of the base 14a, thereby controlling the temperature of the base 14a. By controlling the temperature of the base 14a, the temperature of the workpiece WP on the electrostatic chuck 14c is controlled via the electrostatic chuck 14c on the base 14a.

[0025] Furthermore, the stage 14 is provided with a pipe 74 for supplying a heat transfer gas, such as He gas, between the upper surface of the electrostatic chuck 14c and the rear surface of the workpiece WP.

[0026] The microwave output device 16 outputs microwaves (an example of electromagnetic waves) for exciting the processing gas supplied into the processing vessel 12. The microwave output device 16 is capable of adjusting the frequency, power, bandwidth, and the like of the microwaves. For example, the microwave output device 16 can generate a microwave of a single frequency by setting the bandwidth of the microwave to approximately 0. The microwave output device 16 can also generate a microwave including a plurality of frequency components belonging to a predetermined frequency bandwidth (hereinafter, appropriately referred to as a "broadband microwave"). The power of these plurality of frequency components may be the same, or only the central frequency component in the band may have a power greater than the power of the other frequency components. The microwave output device 16 can adjust the power of the microwave within a range of, for example, 0 W to 5000 W. The microwave output device 16 can adjust the frequency of the microwave or the central frequency of the broadband microwave within a range of, for example, 2.3 GHz to 2.5 GHz, and can adjust the bandwidth of the broadband microwave within a range of, for example, 0 MHz to 100 MHz. Furthermore, the microwave output device 16 can adjust the frequency pitch (carrier pitch) of a plurality of frequency components of the broadband microwave within a range of, for example, 0 to 25 kHz.

[0027] The device main body 10 also includes a waveguide 21, a tuner 26, a mode converter 27, and a coaxial waveguide 28. The output section of the microwave output device 16 is connected to one end of the waveguide 21. The other end of the waveguide 21 is connected to the mode converter 27. The waveguide 21 is, for example, a rectangular waveguide. The waveguide 21 is provided with a tuner 26. The tuner 26 has movable plates 26a and 26b. By adjusting the amount of protrusion of each of the movable plates 26a and 26b with respect to the internal space of the waveguide 21, the impedance of the microwave output device 16 can be matched with the impedance of the load.

[0028] The mode converter 27 converts the mode of the microwaves output from the waveguide 21, and supplies the mode-converted microwaves to the coaxial waveguide 28. The coaxial waveguide 28 includes an outer conductor 28a and an inner conductor 28b. The outer conductor 28a and the inner conductor 28b have a substantially cylindrical shape. The outer conductor 28a and the inner conductor 28b are disposed above the antenna 18 such that the central axes of the outer conductor 28a and the inner conductor 28b substantially coincide with the axis Z. The coaxial waveguide 28 transmits the microwaves whose mode has been converted by the mode converter 27 to the antenna 18.

[0029] The antenna 18 supplies microwaves to the generation space T. The antenna 18 is an example of an electromagnetic wave supplying unit. The antenna 18 is provided on the upper surface 20b of the dielectric window 20, and supplies microwaves to the generation space T through the dielectric window 20. The antenna 18 includes a dielectric plate 32 and a cooling jacket 34.

[0030] The dielectric plate 32 is formed in a substantially disk shape from a dielectric material such as quartz. The dielectric plate 32 is provided on the upper surface 20b of the dielectric window 20 such that the central axis of the dielectric plate 32 substantially coincides with the axis Z. The cooling jacket 34 is provided on the dielectric plate 32. In other words, the dielectric plate 32 is provided between the cooling jacket 34 and the dielectric window 20.

[0031] The surface of the cooling jacket 34 is conductive. A flow path 34a is formed inside the cooling jacket 34. A refrigerant is supplied to the flow path 34a from a chiller unit (not shown). The lower end of the outer conductor 28a is electrically connected to the upper surface of the cooling jacket 34. The lower end of the inner conductor 28b passes through an opening formed in the center of the cooling jacket 34 and the dielectric plate 32 and extends to the vicinity of the upper surface 20b of the dielectric window 20. In other words, the antenna 18 forms a monopole antenna.

[0032] The microwaves propagated in the coaxial waveguide 28 in the TEM mode propagate from the inner conductor 28b through the dielectric plate 32 and are radiated in the TM01 mode into the generation space T via the dielectric window 20. That is, in the antenna 18, by not providing a slot plate, the microwaves are radiated into the generation space T without resonance. That is, the antenna 18 can suppress the generation of plasma directly below the lower surface 20a of the dielectric window 20. Also, the magnetic field components of the microwaves radiated into the generation space T are in the circumferential direction centered on the Z axis.

[0033] The resonator array structure 100 is formed by arranging a plurality of resonators that can resonate with the magnetic field component of microwaves and have a size smaller than the wavelength of the microwaves, and is located, for example, above the opening 12c in the processing vessel 12 while being supported by a support member 22. The resonator array structure 100 also includes a through-hole 125 (described later) that separates the processing space S from the generation space T and communicates between the processing space S and the generation space T. In other words, the resonator array structure 100 is an example of a showerhead that includes the through-hole 125.

[0034] The radiation of microwaves from the antenna 18 to the generation space T is non-resonant, so that high-density plasma is not generated. By positioning the resonator array 100 in the processing vessel 12, the microwaves supplied to the generation space T by the antenna 18 can be resonated with the multiple resonators of the resonator array 100. By the resonance between the microwaves and the multiple resonators, the microwaves can be efficiently supplied to the resonator array 100 in the processing vessel 12, and the magnetic permeability of the resonator array 100 can be made negative. When the magnetic permeability of the resonator array 100 is negative, even if the electron density of the plasma generated in the resonator array 100 reaches the cutoff density and the dielectric constant of the resonator array 100 is negative, the refractive index becomes a real number according to the above formula (1). Therefore, even if a plasma generation region is formed above the resonator array 100 in the generation space T, the microwaves can propagate. As a result, even if the electron density of the plasma generated in the plasma generation region above the resonator array 100 in the generation space T reaches the cutoff density, the microwaves can propagate beyond the skin depth of the plasma, and the microwave power is efficiently absorbed by the plasma. As a result, high-density plasma can be generated over a wide range beyond the skin depth of the plasma. That is, according to the plasma processing apparatus 1 of this embodiment, the resonator array 100 is located inside the processing vessel 12, so that high-density plasma can be realized over a wide range.

[0035] Here, a detailed configuration of the resonator array 100 will be described with reference to Fig. 1 and Fig. 2. Fig. 2 is a plan view showing an example of a configuration of the support member 22 and the resonator array 100 according to the first embodiment viewed from above. In Fig. 2, the support member 22 and the resonator array 100 are shown in a disk shape.

[0036] 1 and 2, the resonator array structure 100 is disposed above an opening 12c in the processing vessel 12 and is supported by a support member 22. The support member 22 may have a seal structure that seals between the processing space S and the generation space T.

[0037] The resonator array structure 100 is formed by arranging a plurality of resonators 101, each of which can resonate with the magnetic field component of a microwave and has a size smaller than the wavelength of the microwave, in a lattice pattern. Specifically, the plurality of resonators 101 includes at least one of resonators 101A and 101B shown in Fig. 3 and Fig. 4. Each of the plurality of resonators 101 constitutes a series resonant circuit made up of a capacitor equivalent element and a coil equivalent element. The series resonant circuit is realized by patterning a conductor on a plane.

[0038] Fig. 3 is a diagram showing an example of the configuration of a card-shaped resonator 101A according to the first embodiment. The card-shaped resonator 101A shown in Fig. 3 has a structure in which two C-shaped ring members 111A made of a conductor and arranged in mutually opposing directions and in a concentric shape are laminated on one surface of a dielectric plate 112A. Capacitor equivalent elements are formed on the opposing surfaces of the inner ring member 111A and the outer ring member 111A and on both ends of each ring member 111A, and coil equivalent elements are formed along each ring member 111A. This allows the resonator 101A to form a series resonant circuit.

[0039] FIG. 4 is a diagram showing an example of the configuration of a card-shaped resonator 101B according to the first embodiment. The card-shaped resonator 101B shown in FIG. 4 has a structure in which a dielectric plate 112B is arranged between two C-shaped ring members 111B made of a conductor and arranged adjacent to each other in the opposite directions. That is, in the resonator 101B, the dielectric plate 112B is sandwiched between the two C-shaped ring members 111B arranged in the opposite directions. Capacitor equivalent elements are formed on the opposing surfaces of the two C-shaped ring members 111B and on both ends of each ring member 111B, and coil equivalent elements are formed along each ring member 111B. This allows the resonator 101B to form a series resonant circuit. The card-shaped resonator 101B can also be expressed as being formed into a card shape for each set of two C-shaped ring members 111B.

[0040] In the resonator 101B shown in FIG. 4, the number of ring members 111B arranged (hereinafter also referred to as "number of layers") is two, but the number of layers of the ring members 111B may be greater than two. FIG. 5 is a diagram showing another example of the configuration of the card-shaped resonator 101B according to the first embodiment. The resonator 101B shown in FIG. 5 has N (N≧2) C-shaped ring members 111B made of a conductor, and has a structure in which a dielectric plate 112B is arranged between the ring members 111B arranged adjacent to each other in opposite directions. With such a structure, the resonator 101B can also form a series resonant circuit.

[0041] Further, an insulating coating may be formed on each of the multiple resonators 101. FIG. 6 is a diagram showing an example of a cross section of a card-shaped resonator 101B according to the first embodiment. FIG. 6 shows a side cross section of the resonator 101B shown in FIG. 4. An insulating coating (an example of a dielectric film) 113 is formed on the surface of the resonator 101B. The material of the coating 113 is, for example, ceramic. The thickness of the coating 113 is, for example, within a range of 0.001 mm to 2 mm. By forming the insulating coating 113 on each of the multiple resonators 101, abnormal discharge in each of the multiple resonators 101 can be suppressed.

[0042] 1, a conduit 36 ​​is provided inside the inner conductor 28b of the coaxial waveguide 28. The conduit 36 ​​extends through the inside of the inner conductor 28b and is connected to a gas supply 38.

[0043] The gas supply unit 38 supplies a processing gas for processing the workpiece WP to the conduit 36. The gas supply unit 38 includes a gas supply source 38a, a valve 38b, and a flow rate controller 38c. The gas supply source 38a is a supply source of the processing gas. The valve 38b controls the supply and stop of the processing gas from the gas supply source 38a. The flow rate controller 38c is, for example, a mass flow controller, and controls the flow rate of the processing gas from the gas supply source 38a.

[0044] The apparatus body 10 also includes an injector 41. The injector 41 supplies gas from the conduit 36 ​​to the through-hole 20h formed in the dielectric window 20. The gas supplied to the through-hole 20h of the dielectric window 20 is sprayed into the generation space T and excited in a plasma generation region above the resonator array structure 100 by microwaves supplied from the antenna 18 to the generation space T through the dielectric window 20. As a result, the processing gas is turned into plasma in the plasma generation region above the resonator array structure 100 in the generation space T, and radicals contained in the plasma and non-activated processing gas are supplied to the processing space S through the through-hole 125 described later. In addition, ions contained in the plasma are recombined to become radicals when passing through the through-hole 125, and are similarly supplied to the processing space S. The processing space S becomes a high-density radical region, and the workpiece WP is processed by the radicals.

[0045] The control device 11 has a processor, a memory, and an input / output interface. The memory stores programs, process recipes, etc. The processor reads out and executes the programs from the memory, thereby controlling each part of the device body 10 via the input / output interface based on the process recipes stored in the memory.

[0046] For example, when plasma is generated in a plasma generation region above the resonator array structure 100 in the generation space T, the control device 11 controls the microwaves supplied to the generation space T by the antenna 18 to resonate with the multiple resonators 101 in a target frequency band higher than the resonant frequency of the multiple resonators 101. Here, the resonant frequency is, for example, a frequency at which the transmission characteristic value (e.g., S21 value) of the multiple resonators 101 becomes a minimum value.

[0047] FIG. 7 is a diagram showing an example of the relationship between the S21 value of a card-shaped resonator and the frequency of the microwave. When the frequency of the microwave supplied to the processing space S and the generation space T by the antenna 18 coincides with the resonance frequency Fr (=about 2.35 GHz) of each resonator 101, the S21 value of each resonator 101 becomes a minimum value, and resonance occurs between the microwave and each resonator 101. The resonance between the microwave and each resonator 101 is maintained even in a predetermined frequency band (for example, about 0.1 GHz) higher than the resonance frequency Fr of each resonator 101. In the predetermined frequency band higher than the resonance frequency Fr of each resonator 101, the resonance between the microwave and each resonator 101 can make both the permittivity and the permeability negative in the plasma generation region above the resonator array structure 100 in the generation space T. Therefore, as can be seen from the above formula (1), the microwave can propagate in the plasma generation region above the resonator array structure 100 in the generation space T. The target frequency band in this embodiment is set to a predetermined frequency band (e.g., about 0.1 GHz) higher than the resonance frequency Fr of each resonator 101. The target frequency band is preferably, for example, within 0.05 times the resonance frequency Fr of each resonator 101. Note that the resonance frequency fr of the card-shaped resonator 101 can be measured, for example, by a vector network analyzer in which a transmitting / receiving antenna is arranged in a direction parallel to the ring member 111B of the card-shaped resonator 101B.

[0048] Next, the resonant frequency of the resonator 101B will be described with reference to FIG. 8. FIG. 8 is an explanatory diagram showing an example of the resonant frequency of the resonator according to the first embodiment. As shown in a cross section 140 of FIG. 8, the resonator 101B can be regarded as having a structure in which a dielectric plate 112B is sandwiched between two C-shaped ring members 111B. At this time, when a magnetic field H penetrating the C-shaped ring member 111B of the resonator 101B is generated, an induced current Ie is generated in the C-shaped ring member 111B. Note that the coating 113 surrounding the outside of the C-shaped ring member 111B is omitted in FIG. 8.

[0049] On the other hand, the resonant frequency of resonator 101B is obtained from the dimensions of cross section 140 and plane 141 in Fig. 8. In other words, the resonant frequency of resonator 101B can be obtained from the dimensions of C-shaped ring member 111B and the thickness of dielectric plate 112B sandwiched between two C-shaped ring members 111B, as shown in the following formulas (2) to (5). Formula (2) expresses inductance L MA Equation (3) is the equation for determining the capacitance C of the resonator 101B. MA The capacitance C corresponding to the upper half or lower half of the plane 141 half Equation (4) is a formula for determining the capacitance C of the resonator 101B. MA Equation (5) is used to calculate the resonant frequency Fr of the resonator 101B.

[0050]

number

number

number

number

[0051] In formula (2), r represents the radius from the center of the C-shaped ring member 111B to the center of the width of the C, and μ0 represents the magnetic permeability of a vacuum. half represents the capacitance of the resonator 101B that corresponds to the upper half or lower half of the plane 141. In addition, in formula (3), ε represents the dielectric constant, ε0 represents the dielectric constant (electric constant) of a vacuum, S represents the area of ​​the upper half or lower half of the C-shaped ring member 111B, and d represents the distance between the two C-shaped ring members 111B. In addition, in formula (3), r out represents the outer radius of the C-shaped ring member 111B, and r inrepresents the inner radius of the C-shaped ring member 111B, and S split represents the area of ​​the C-shaped gap of the C-shaped ring member 111B. split is approximately calculated as the area of ​​a rectangle from the width W of the C-shaped ring member 111B shown in the plane 141 and the gap g of the C-shape. PTFE represents the distance between the two C-shaped ring members 111B when polytetrafluoroethylene (PTFE) is used as the dielectric plate 112B. As shown in the cross section 140, it is preferable that the thickness d1 of the two C-shaped ring members 111B is the same.

[0052] In equation (5), the inductance L calculated in equations (2) and (4) is MA and capacitance C MA The resonance frequency Fr of the resonator 101B is calculated based on the above equation. The resonance frequency Fr is calculated based on the outer radius r out and the inner radius r in The resonance frequency Fr decreases as the thickness d of the dielectric plate 112B sandwiched between the two C-shaped ring members 111B decreases. The resonance frequency Fr also decreases as the number of stacked C-shaped ring members 111B increases. In other words, the resonance frequency Fr decreases as the outer radius r out and the inner radius r in By adjusting the thickness d of the dielectric plate 112B, it is possible to form resonators 101 having different resonance frequencies Fr. In this embodiment, the C-shaped ring members 111A and 111B are described as being circular rings with a notch in a portion thereof, but the present invention is not limited to this. The shape of the ring members is not limited to a circular ring, and may be, for example, an elliptical ring, a triangular ring, a square ring, a polygonal ring, or any other ring with a notch (corresponding to the gap g).

[0053] Regarding the propagation of electromagnetic waves through multiple resonators, the relationship between the resonant frequency and the refractive index, dielectric constant, and magnetic permeability has been reported by D.R. Smith, D.C. Vier, Th. Koschny, and C.M. Soukoulis et al. in "Electromagnetic parameter retrieval from inhomogeneous metamaterials" in "PHYSICAL REVIEW E 71,036617(2005)".

[0054] In this way, by resonating the microwave with the multiple resonators 101 in a target frequency band higher than the resonant frequency Fr of the multiple resonators 101, even if the electron density of the plasma reaches the cutoff density, the microwave can propagate beyond the skin depth of the plasma. Therefore, the power of the microwave can be efficiently absorbed by the plasma. As a result, high-density plasma can be generated over a wide range beyond the skin depth of the plasma. That is, according to the plasma processing apparatus 1 of this embodiment, by resonating the microwave with the multiple resonators 101 in a target frequency band higher than the resonant frequency Fr of the multiple resonators 101, high-density plasma can be realized over a wide range.

[0055] [Details of the resonator array structure] Next, the resonator array structure 100 will be described in detail. As shown in FIG. 2, the resonator array structure 100 has card-shaped resonators 101 arranged in a lattice pattern. In the following description, the resonator array structure 100 may be referred to as a metamaterial 100, and the card-shaped resonators 101 may be referred to as meta-atoms 101. In the example of FIG. 2, the meta-atoms 101 are arranged such that the cells C surrounded by the meta-atoms 101 are formed in five columns in the X-axis direction and five rows in the Y-axis direction (cells C11 to C55). That is, the meta-atoms 101 are arranged in six rows and five columns, such as X11, X12, . . ., X15, . . ., X61, X62, . . ., X65, with the longitudinal direction aligned with the X-axis direction. The meta atoms 101 are arranged in 5 rows and 6 columns with their longitudinal directions aligned along the Y-axis direction, such as Y11, Y21, . . ., Y51, . . ., Y16, Y26, . . ., Y56. The lattice width and depth of cell C are larger than the outer shape of the C-shaped ring member of the meta atom 101 (for example, ring member 111B).

[0056] Furthermore, a through hole 125 is formed at the center of the bottom surface of each cell C of the resonator array structure 100. When controlling the density of plasma, the meta-atoms 101 constituting the peripheral cells C and the meta-atoms 101 near the central cell C may have different resonant frequencies Fr.

[0057] Fig. 9 is a perspective view showing an example of a resonator array structure according to the first embodiment. In Fig. 9, ring members are drawn on some of the meta-atoms 101 so that the orientation of the meta-atoms 101 can be easily understood, but in reality, the surfaces are covered with a dielectric (insulating film).

[0058] The resonator array structure 100 shown in Fig. 9 has a base plate 120. The base plate 120 is made of a dielectric material such as quartz or ceramics. The base plate 120 is provided with a plurality of grooves 121X in the X-axis direction and a plurality of grooves 121Y in the Y-axis direction as grooves for fitting the meta-atoms 101. Furthermore, a through hole 125 is provided in the portion of the base plate 120 that will become the bottom surface of each cell, as shown in Fig. 2.

[0059] A meta atom 101 is fitted into each of the grooves 121X and 121Y. In the following description, the meta atom 101 fitted into the groove 121X may be referred to as a meta atom 101X, and the meta atom 101 fitted into the groove 121Y may be referred to as a meta atom 101Y. The meta atom 101X is assumed to be wider than the meta atom 101Y, and the ends of the meta atoms 101X are assumed to be in contact with each other. The areas surrounded by the meta atom 101X and the meta atom 101Y are each a cell C. In the example of FIG. 9, five rows and five columns of cells are formed, cells C11 to C55.

[0060] The side pressing members 123 are fixed to the base plate 120 by screws 124 so as to contact one side of the meta-atoms 101Y at the locations Y11 to Y51 and Y16 to Y56 shown in Fig. 2 among the meta-atoms 101 on the outermost periphery. The side pressing members 123 and the screws 124 are an example of pressing members, and are made of ceramics such as alumina, which is a dielectric member.

[0061] The side pressing members 127 are fixed to the base plate 120 using screws 128 so as to contact one side of the meta-atoms 101X at locations X11 to X15 and locations X61 to X65 shown in FIG. 2 among the outermost meta-atoms 101. A space 127a is formed between the side pressing members 127 and the outermost meta-atom 101X. The space 127a is provided in consideration of plasma generation. The side pressing members 127 and the screws 128 are an example of pressing members, and are made of ceramics such as alumina, which is a dielectric member.

[0062] The pressing member 129 presses the meta-atoms 101X and 101Y between the two side pressing members 127. The pressing member 129 is disposed between the two side pressing members 127 so as to continuously press the upper part of the meta-atom 101Y in the longitudinal direction and also press the upper end of the meta-atom 101X. In other words, the pressing member 129 is disposed parallel to the side pressing member 123. The pressing member 129 is formed of ceramics such as alumina, which is a dielectric material.

[0063] Member 130 is disposed on top of side pressing member 127 in order to fix pressing member 129. An end of pressing member 129 is sandwiched between side pressing member 127 and member 130. Member 130 is fixed to side pressing member 127 by screw 131. Member 130 and screw 131 are an example of a pressing member, and are made of ceramics such as alumina, which is a dielectric member.

[0064] The through-hole 125 communicates the generation space T, which each cell C faces, with the surface of the base plate 120 opposite to the surface on which each cell C is formed, i.e., the processing space S, which the lower surface of the base plate 120 faces. The through-hole 125 has, for example, a circular cross section. The through-hole 125 has a diameter of, for example, 10 mm or less, so that the ions are recombined and radicals and non-activated processing gas pass from the generation space T to the processing space S. It is more preferable that the through-hole 125 has a diameter of, for example, 2 mm or less. In other words, the through-hole 125 has a diameter that does not allow ions to pass from the generation space T to the processing space S.

[0065] [Generation of High-Density Radicals in the First Embodiment] Next, the plasma generation region and the high-density radical region will be described with reference to FIG. 10. FIG. 10 is a diagram showing an example of the plasma generation region and the high-density radical region in a part of the AA cross section in FIG. 9. As shown in FIG. 10, in the resonator array structure 100, the magnetic field H is directed to penetrate the resonator 101B of each cell C, so that the resonator 101B resonates and a plasma P is excited in each cell C. That is, the cell space CS of each cell C becomes the plasma generation region. Since the inside of the processing vessel 12 is depressurized by the exhaust device 56, a flow toward the exhaust port 12h is generated. Therefore, the processing gas supplied from the through hole 20h to the generation space T is excited into a plasma P in each cell C, and flows into the processing space S through each through hole 125. That is, a high-density radical region R where the radicals are highly dense is formed on the lower surface side of the base plate 120. The workpiece WP is processed by the high-density radicals in the high-density radical region R.

[0066] In this manner, in this embodiment, high-density radicals can be generated. That is, since a large amount of radicals are supplied to the surface of the workpiece WP without diffusing the high-density plasma (high-density radicals), the processing speed of the workpiece WP can be improved. In addition, since the resonator array structure 100, which is a plasma source, also serves as a shower plate (shower head), the distance between the workpiece WP and the resonator array structure 100 can be set short, and loss of plasma due to diffusion can be suppressed. Furthermore, since the flow rate distribution can be controlled at each through-hole 125, the in-plane uniformity of the workpiece WP can be improved. Furthermore, since the resonator array structure 100 itself, which serves as a shower plate, discharges, dry cleaning can be easily performed. Furthermore, in the resonator array structure 100, the frequency of the supplied microwaves can be controlled, so that the resonant state of each resonator 101 can be controlled. In other words, the position of dry cleaning can be changed by using the plasma mode (negative refractive index (ε<0, μ<0), positive refractive index (ε>0, μ>0), and imaginary refractive index (ε<0, μ>0)).

[0067] (Variation 1) Next, a first modification of the first embodiment will be described with reference to FIG. 11. FIG. 11 is a diagram showing an example of a part of a cross section of a resonator array according to the first modification. A resonator array 100a according to the first modification shown in FIG. 11 is obtained by adding a temperature control function to the resonator array 100 according to the first embodiment. In the resonator array 100a, a heater 126 is embedded in a base plate 120a as a temperature control function. In the resonator array 100a, the temperature can be controlled by heating the base plate 120a with the heater 126. Alternatively, instead of the heater 126, a flow path for a heat medium may be provided, and a heat medium whose temperature is controlled by a chiller unit (not shown) may be circulated through the flow path of the base plate 120a to control the temperature of the base plate 120a. Alternatively, the heat medium may be a refrigerant such as cooling water. In this case, the temperature can be controlled by cooling the base plate 120a.

[0068] Second embodiment In the above-described first embodiment, a resonator array structure 100 in which a plurality of resonators 101 are arranged vertically on a flat base plate 120 is used, but a flat resonator array structure in which the resonators 101 are arranged on the same plane may be used. An embodiment in which such a resonator array structure is used will be described as a second embodiment. In the second embodiment, the same components as those in the plasma processing apparatus 1 of the first embodiment are denoted by the same reference numerals, and descriptions of the overlapping components and operations will be omitted.

[0069] FIG. 12 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the second embodiment. The plasma processing apparatus 201 shown in FIG. 12 has an apparatus body 210 instead of the apparatus body 10 of the plasma processing apparatus 1 of the first embodiment. The plasma processing apparatus 201 shown in FIG. 12 is configured as, for example, an inductively coupled plasma processing apparatus. The apparatus body 210 includes a processing vessel 212, a stage 14, an RF (Radio Frequency) power source (an example of an electromagnetic wave generator) 216, a dielectric window 220, an antenna 230, a gas supply unit 238, and a resonator array structure 300. The apparatus body 210 also includes a central gas injection unit 213. The central gas injection unit 213 is disposed above the stage 14 and attached to a central opening of the dielectric window 220. The antenna 230 is disposed above or above (outside) the processing vessel 212 (dielectric window 220).

[0070] The processing vessel 212 is formed in a substantially cylindrical shape from, for example, aluminum whose surface is anodized, and provides a substantially cylindrical processing space S and generation space T therein. The processing vessel 212 is safety grounded. The processing vessel 212 has a sidewall 212a and a bottom 212b. The central axis of the sidewall 212a is defined as axis Z. The bottom 212b is provided on the lower end side of the sidewall 212a. An exhaust port 212h for exhaust is provided in the bottom 212b. The upper end of the sidewall 212a is open. The inner wall surface of the sidewall 212a faces the processing space S and the generation space T. That is, the sidewall 212a is provided with the inner wall surface facing the processing space S and the generation space T.

[0071] An opening 212c for loading / unloading the object WP to be processed is formed in the side wall 212a. The opening 212c is opened and closed by a gate valve GB.

[0072] A dielectric window 220 is provided at the upper end of the side wall 212a, and closes the opening at the upper end of the side wall 212a from above. A lower surface 220a of the dielectric window 220 faces the generation space T. That is, the dielectric window 220 is provided with the lower surface 220a facing the generation space T.

[0073] The RF (Radio Frequency) power supply 216 is coupled to the antenna 230 and configured to generate a source RF signal (source RF power) for plasma generation through at least one impedance matching circuit. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 3000 MHz. In one embodiment, the RF power supply 216 may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 230. Note that the RF power supply 216 is an example of an electromagnetic wave generator and an example of a high-frequency power supply, as described above. Also, the antenna 230 is an example of an electromagnetic wave supply unit.

[0074] The antenna 230 includes one or more coils. In one embodiment, the antenna 230 may include an outer coil and an inner coil arranged on the same axis. In this case, the RF power source 216 may be connected to both the outer coil and the inner coil, or to either one of the outer coil and the inner coil. In the former case, the same RF generating unit in the RF power source 216 may be connected to both the outer coil and the inner coil, or separate RF generating units may be connected to the outer coil and the inner coil separately. In one embodiment, the antenna 230 is a planar coil formed in a substantially circular spiral shape (planar spiral shape). That is, the antenna 230 is wound in a loop shape. Note that the magnetic field generated by the antenna 230 is in the direction of the axis Z. In addition, the opening of the antenna 230 may be any shape such as a circle, an ellipse, and a polygon (rectangle, triangle, etc.).

[0075] Also, when the antenna 230 includes an outer coil and an inner coil, the outer coil functions as a primary coil to which the RF power source 216 is connected. In one embodiment, the outer coil is a planar coil and is formed in a substantially circular spiral shape. The inner coil functions as a secondary coil that is inductively coupled with the primary coil. That is, the inner coil is not connected to the RF power source 216. In one embodiment, the inner coil is a planar coil and is formed in a substantially circular ring shape. In one embodiment, the inner coil is connected to a variable capacitor, and the direction and magnitude of the current flowing through the inner coil are controlled by controlling the capacitance of the variable capacitor. The outer coil and the inner coil may be disposed at the same height or at different heights. In one embodiment, the inner coil is disposed at a lower position than the outer coil. Note that the antenna 230 is not a strong resonator, so that the generation of plasma directly below the dielectric window 220 is suppressed and the electromagnetic wave is supplied vertically to the resonator array structure 300.

[0076] The gas introduction unit is configured to introduce at least one processing gas from the gas supply unit 238 into the generation space T. In one embodiment, the gas introduction unit includes a center gas injector (CGI) 213. The center gas injector 213 is disposed above the stage 14 and the resonator array structure 300, and is attached to a central opening formed in the dielectric window 220. The center gas injector 213 has at least one gas supply port 213a, at least one gas flow path 213b, and at least one gas inlet 213c. The processing gas supplied to the gas supply port 213a passes through the gas flow path 213b and is introduced from the gas inlet 213c into the generation space T, and is excited by an electromagnetic wave supplied from the antenna 230 to the generation space T through the dielectric window 220. As a result, the processing gas is turned into plasma in the generation space T, and radicals and non-activated processing gas contained in the plasma are supplied to the processing space S through a through hole 308 described later. Furthermore, ions contained in the plasma recombine to become radicals when passing through the through-holes 308, and are similarly supplied to the processing space S. The processing space S becomes a high-density radical region, and the workpiece WP is processed by the radicals. Note that the gas introduction part may include, in addition to or instead of the central gas injection part 213, one or more side gas injection parts (SGI: Side Gas Injector) attached to one or more openings formed in the side wall 212a.

[0077] The gas supply 238 may include at least one gas source 238a and at least one flow controller 238b. In one embodiment, the gas supply 238 is configured to supply at least one process gas from a respective gas source 238a through a respective flow controller 238b to the gas inlet. Each flow controller 238b may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 238 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0078] The resonator array structure 300 is formed by arranging a plurality of resonators that can resonate with the magnetic field component of the electromagnetic wave and have a size smaller than the wavelength of the electromagnetic wave, and is located, for example, above the opening 212c in the processing vessel 212 while being supported by a support member 322. The resonator array structure 300 also includes a through-hole 308 (described later) that separates the processing space S from the generation space T and communicates between the processing space S and the generation space T. In other words, the resonator array structure 300 is an example of a showerhead that includes the through-hole 308. The support member 322 may be a seal structure that seals between the processing space S and the generation space T.

[0079] Here, a detailed configuration of the resonator array 300 will be described with reference to Fig. 12 and Fig. 13. Fig. 13 is a plan view showing an example of a configuration of a support member and a resonator array according to the second embodiment viewed from above. In Fig. 13, the support member 322 and the resonator array 300 are shown in a disk shape.

[0080] As shown in FIGS. 12 and 13, the resonator array 300 is disposed above the opening 212c in the processing vessel 212 and supported by a support member 322.

[0081] The resonator array structure 300 is formed by arranging a plurality of resonators 301, each of which can resonate with the magnetic field component of an electromagnetic wave and has a size smaller than the wavelength of the electromagnetic wave, in a lattice pattern. Specifically, as shown in FIG. 13, the plurality of resonators 301 are arranged in a plane parallel to the lower surface 220a of the dielectric window 220 in the flat resonator array structure 300. That is, when viewed from the lower surface 220a side, the C-shaped ring members 311 shown in a transparent manner are arranged in a lattice pattern so that the C shape is visible. In the resonator array structure 300, for example, the resonators 301 are arranged in 8 rows and 8 columns. At this time, the boundaries of the plurality of resonators 301 are shown as boundaries 305, but in reality, the plurality of resonators 301 are formed as a single unit as the resonator array structure 300. The plurality of resonators 301 may be formed as separate bodies and fitted into a lattice frame or bonded to each other to form the resonator array structure 300. Each of the resonators 301 constitutes a series resonant circuit consisting of a capacitor equivalent element and a coil equivalent element. The series resonant circuit is realized by patterning a conductor on a plane. The magnetic field generated by the antenna 230 is directed to pass through the C-shaped ring member 311.

[0082] Fig. 14 is a cross-sectional view showing an example of the BB cross section of Fig. 13. As shown in Fig. 14, in the BB cross section of the resonator array 300, cross sections of the multiple resonators 301 appear side by side. Similarly to Fig. 13, the boundary between the multiple resonators 301 is represented by a boundary 305. Here, the first surface 306 of the resonator array 300 is a surface facing the dielectric window 220 side (generation space T side), and the second surface 307 is a surface facing the stage 14 side (processing space S side). Furthermore, a through hole 308 is provided at the center of each of the multiple resonators 301.

[0083] FIG. 15 is a diagram showing an example of a plane and a CC section of a single resonator according to the second embodiment. In FIG. 15, a plane view 350 of a single resonator 301 and a cross section 351 of the CC section of the plane view 350 are shown, taking a certain resonator 301 as an example among a plurality of resonators 301 formed as an integral body. As shown in the plane view 350 and the cross section 351, the single resonator 301 is in an area surrounded by a boundary 305. That is, in this embodiment, the resonator 301 is in a state in which two C-shaped ring members 311 are each surrounded by a dielectric 312. The dielectric 312 is formed so that a thickness 309a from the first C-shaped ring member 311 to the first surface 306 is thinner than a thickness 309b from the second C-shaped ring member 311 to the second surface 307. This allows the resonator array structure 300 to selectively generate plasma on the first surface 306 side, which is the generation space T side. That is, the resonator array structure 300 can control the plasma generation surface by the thickness of the dielectric material 312 from each ring member 311 of the resonator 301 to the surface.

[0084] The through hole 308 communicates the generation space T, which the first surface 306 faces, with the processing space S, which the second surface 307 faces. The through hole 308 has, for example, a circular cross section. The through hole 308 has, for example, a diameter of 10 mm or less, so that ions are recombined and radicals and non-activated processing gas pass from the generation space T to the processing space S. In addition, the through hole 308 is more preferably, for example, a diameter of 2 mm or less. That is, the through hole 308 has a diameter that does not allow ions to pass from the generation space T to the processing space S. That is, radicals and non-activated processing gas contained in the plasma generated in the generation space T on the first surface 306 side are supplied to the processing space S on the second surface 307 side through the through hole 308. In addition, ions contained in the plasma are recombined to become radicals when passing through the through hole 308, and are similarly supplied to the processing space S. The processing space S becomes a high-density radical region, and the workpiece WP is processed by the radicals.

[0085] FIG. 16 is a cross-sectional view showing an example of the DD cross section of FIG. 15. FIG. 17 is a cross-sectional view showing an example of the EE cross section of FIG. 15. As shown in the cross-sectional view 351 of FIG. 15, FIG. 16, and FIG. 17, the single resonator 301 has a structure in which two C-shaped ring members 311 made of a conductor are arranged adjacent to each other in the opposite directions, and a dielectric 312 is arranged between the ring members 311. That is, in the resonator 301, the dielectric 312 is sandwiched between the two C-shaped ring members 311 arranged in the opposite directions. In addition, the through hole 308 is provided at the center of the two C-shaped ring members 311 as described above. Capacitor equivalent elements are formed on the opposing surfaces of the two C-shaped ring members 311 and at both ends of each ring member 311, and a coil equivalent element is formed along each ring member 311. This allows the resonator 301 to configure a series resonant circuit. 15 to 17, the number of C-shaped ring members 311 arranged (hereinafter also referred to as "number of layers") is two, but the number of layers of C-shaped ring members 311 may be greater than two. In this case, the resonator 301 has a structure in which the C-shaped ring members 311 are arranged adjacent to each other in opposite directions, and a dielectric material 312 is arranged between the C-shaped ring members 311. The resonant frequency of the resonator 301 is similar to that of the resonator 101 of the first embodiment, and therefore a description thereof will be omitted.

[0086] FIG. 18 is a diagram showing another example of a plane and a CC cross section of a single resonator according to the second embodiment. The single resonator 301 shown in FIG. 15 may further have a plurality of through holes 308a in the range surrounded by the boundary 305 so as to avoid the C-shaped ring member 311, as in the single resonator 301A shown in FIG. 18. The plurality of through holes 308a communicate with the generation space T that the first surface 306 faces and the processing space S that the second surface 307 faces, similarly to the through hole 308. In the example of FIG. 18, the single resonator 301A has one through hole 308 and four through holes 308a. In this way, the flow rate distribution may be controlled by the number of through holes 308, 308a that communicate with the generation space T and the processing space S.

[0087] [Generation of High-Density Radicals in the Second Embodiment] Next, the plasma generation region and the high-density radical region will be described with reference to FIG. 19 to FIG. 21. FIG. 19 is a diagram showing an example of the plasma generation region and the high-density radical region in a part of the BB cross section of FIG. 13. As shown in FIG. 19, in the resonator array structure 300, the magnetic field H is in a direction penetrating each resonator 301, so that each resonator 301 resonates, and plasma P is excited on the first surface 306 side of each resonator 301. That is, the first surface 306 side of the resonator array structure 300 becomes the plasma generation region. Since the inside of the processing vessel 212 is depressurized by the exhaust device 56, a flow toward the exhaust port 212h is generated. Therefore, the processing gas supplied from the gas inlet 213c to the generation space T excites plasma P on the first surface 306 side of each resonator 301, and flows into the processing space S through each through hole 308. That is, on the second surface 307 side of the resonator array structure 300, a high-density radical region R where radicals become dense is formed. The workpiece WP is processed by the high-density radicals in the high-density radical region R.

[0088] 20 and 21 are diagrams showing an example of the relationship between the position of the ring member and the plasma generation region. As shown in FIG. 20, in the resonator array structure 300, the thickness 309a of the dielectric 312 from the first C-shaped ring member 311 to the first surface 306 is thinner than the thickness 309b of the second C-shaped ring member 311 to the second surface 307. The dielectric 312 is more likely to absorb the power of the electromagnetic wave when the thickness from the C-shaped ring member 311 to the surface is thinner, and plasma is more likely to be excited on the surface of the dielectric 312 of each resonator 301 on the thinner side. For example, in the resonator array structure 300, by making the thickness 309b twice or more the thickness 309a, plasma is more likely to be excited on the first surface 306 side, which is the thickness 309a side of each resonator 301.

[0089] On the other hand, in the resonator array 300a shown in FIG. 21, the thickness 309c of the dielectric 312 from the first C-shaped ring member 311 to the first surface 306a is thicker than the thickness 309d of the second C-shaped ring member 311 to the second surface 307a. In this case, by making the thickness 309c twice or more as large as the thickness 309d, plasma is easily excited on the second surface 307a side, which is the thickness 309d side of each resonator 301B. If the thicknesses 309c and 309d are substantially the same, plasma is excited on both sides of the first surface 306a and the second surface 307a. As shown in FIG. 20 and FIG. 21, the plasma generation surface can be controlled by the position of the C-shaped ring member 311 in the resonator 301. In this embodiment, radicals are supplied to the processing space S, so the resonator array 300 shown in FIG. 20 is preferable.

[0090] FIG. 22 is a diagram showing an example of the relationship between the position of the shield and the plasma generation region. The resonator array 300b shown in FIG. 12 further includes a shield 313 between the second C-shaped ring member 311 of the resonator array 300 and the second surface 307. The shield 313 is, for example, a conductive member such as aluminum, and a Faraday shield is formed. The shield 313 blocks the electric field of the electromagnetic wave radiated from the antenna 230 to the lower part (the second surface 307 side) of the resonator array 300b. In the resonator array 300b, since there is no electric field at the lower part of the resonator array 300b, no voltage is applied, so that excitation and discharge of plasma at the lower part (the second surface 307 side) of the resonator array 300b can be suppressed.

[0091] In this manner, high-density radicals can also be generated in this embodiment. That is, since a large amount of radicals are supplied to the surface of the workpiece WP without diffusing the high-density plasma (high-density radicals), the processing speed of the workpiece WP can be improved. In addition, since the resonator array structure 300, which is the plasma source, also serves as a shower plate (shower head), loss of plasma due to diffusion can be suppressed. Furthermore, since the flow rate distribution can be controlled at each through-hole 308, the in-plane uniformity of the workpiece WP can be improved.

[0092] (Variation 2) Next, a second modification of the second embodiment will be described with reference to FIG. 23. FIG. 23 is a diagram showing an example of a part of a cross section of a resonator array according to the second modification. A resonator array 300c according to the second modification shown in FIG. 23 is obtained by adding a temperature control function to the resonator array 300 according to the second embodiment. In the resonator array 300c, a heater 314 is embedded in the boundary 305a of each resonator 301D as a temperature control function. The heater 314 is disposed so as to avoid the through-hole 308. In the resonator array 300c, the resonator array 300c itself is heated by the heater 314, so that the temperature can be controlled. Alternatively, instead of the heater 314, a flow path for a heat medium may be provided, and a heat medium whose temperature is controlled by a chiller unit (not shown) may be circulated through the flow path of the resonator array 300c, thereby controlling the temperature of the resonator array 300c. The heat medium may be a refrigerant such as cooling water. In this case, the temperature of the resonator array structure 300c can be controlled by cooling it.

[0093] (Variations 3 and 4) Next, Modifications 3 and 4 of the second embodiment will be described with reference to Fig. 24 and Fig. 25. Modifications 3 and 4 are examples of application to so-called preactivation plasma using a plurality of processing gases. Note that in the description of Modifications 3 and 4, the arrangement of the resonator array structure, the RF power source, and the gas introduction section will be mainly described, and therefore a diagram more simplified than that of Fig. 12 will be used.

[0094] Fig. 24 is a schematic cross-sectional view showing an example of the configuration of an apparatus body according to Modification 3. As shown in Fig. 24, an apparatus body 210a of Modification 3 is configured such that, in addition to the central gas injection part 213, a plurality of side gas injection parts 213d, 213e are provided in a side wall 212a as gas introduction parts, in addition to the apparatus body 210 of the second embodiment.

[0095] A plurality of side gas injection units 213d are provided on the side wall 212a closer to the dielectric window 220 than the resonator array structure 300 and the support member 322, and are controlled by the controller 11 to introduce a first process gas into the generation space T. The central gas injection unit 213 is also controlled by the controller 11 to introduce a first process gas into the generation space T. From the central gas injection unit 213 and the side gas injection unit 213d, one or more first process gases selected from nitrogen (N2) gas, hydrogen (H2) gas, argon gas, and neon gas are introduced into the generation space T.

[0096] The side gas injection parts 213e are provided on the side wall 212a closer to the stage 14 than the resonator array structure 300 and the support member 322, and are controlled by the controller 11 to introduce a second process gas into the processing space S. From the side gas injection parts 213e, for example, one or more second process gases such as nitrogen (N2) gas and ammonia (NH3) gas are introduced into the processing space S.

[0097] When the RF power supply 216 is controlled by the control device 11 to supply electromagnetic waves and electromagnetic waves are supplied from the antenna 230, a plasma P of the first processing gas is generated on the first surface 306 side of the resonator array structure 300 in the generation space T. Radicals (active species) contained in the generated plasma P are supplied to the processing space S through the through-holes 308. In the processing space S, the radicals supplied from the generation space T side are mixed with the second processing gas, and new radicals (active species), such as NH* and NH2* molecules (the symbol * indicates a radical), are generated. The workpiece WP is processed by the radicals generated in the processing space S.

[0098] Instead of the support member 322, the resonator array structure 300 may be disposed on a grid plate provided at approximately the same position as the support member 322. In this case, the second process gas may be supplied to the processing space S through the grid plate. The grid plate is made of, for example, a metal or a dielectric material.

[0099] In this way, in the third modification, radicals can be generated and controlled arbitrarily in the processing space S and the generation space T. Moreover, since electromagnetic waves are wirelessly fed from the antenna 230 to the resonator array structure 300, deactivation of the plasma P generated in the generation space T can be suppressed. Furthermore, in the resonator array structure 300, the distribution of the plasma P can be controlled by the arrangement of the resonators 301. Moreover, the processing speed of a film (encapsulation film) such as silicon nitride or silicon carbide can be improved by irradiating high-density radicals such as hydrogen, nitrogen, argon, and neon.

[0100] Fig. 25 is a schematic cross-sectional view showing an example of the configuration of the apparatus body according to Modification 4. As shown in Fig. 25, the apparatus body 210b of Modification 4 is different from the apparatus body 210 of the second embodiment in that the resonator array structures 400 and 500 are arranged in two stages, and generation spaces T1 and T2 and a processing space S are provided. Also, an RF power source 216a capable of supplying electromagnetic waves to each of the two stages of the resonator array structures 400 and 500 is provided. Furthermore, as a gas introduction section, in addition to the central gas injection section 213, a plurality of side gas injection sections 213f to 213h are provided on the side wall 212a.

[0101] The resonator array structure 400 has a similar configuration to the resonator array structure 300, and is supported by a support member 422. The space between the resonator array structure 400 and the dielectric window 220 is a generation space T1. The resonator array structure 500 has a similar configuration to the resonator array structure 300, and is supported by a support member 522. The space between the resonator array structure 400 and the resonator array structure 500 is a generation space T2, and the space between the resonator array structure 500 and the stage 14 is a processing space S. The resonator array structure 400 and the resonator array structure 500 have different resonant frequencies of the resonators 401, 501.

[0102] The RF power supply 216a generates, for example, a source RF signal of output frequency Fo(1) that resonates with each resonator 401 of the resonator array structure 400, and a source RF signal of output frequency Fo(2) that resonates with each resonator 501 of the resonator array structure 500. The source RF signals of output frequencies Fo(1) and Fo(2) are supplied to the antenna 230. The RF power supply 216a may output electromagnetic waves of output frequencies Fo(1) and Fo(2) in a single peak waveform by FM modulation or the like, or may output them in a broadband waveform that becomes multi-tone.

[0103] A plurality of side gas injection units 213f are provided on the side wall 212a closer to the dielectric window 220 than the resonator array structure 400 and the support member 422, and are controlled by the controller 11 to introduce a first process gas into the generation space T1. The central gas injection unit 213 is also controlled by the controller 11 to introduce a first process gas into the generation space T1. From the central gas injection unit 213 and the side gas injection unit 213f, for example, one or more first process gases selected from nitrogen (N2) gas, hydrogen (H2) gas, argon gas, and neon gas are introduced into the generation space T1.

[0104] A plurality of side gas injection units 213g are provided on the side wall 212a between the resonator array 400 and the support member 422 and the resonator array 500 and the support member 522, and are controlled by the controller 11 to introduce a second process gas into the generation space T2. From the side gas injection units 213g, for example, one or more second process gases such as nitrogen (N2) gas and ammonia (NH3) gas are introduced into the generation space T2.

[0105] A plurality of side gas injection units 213h are provided on the sidewall 212a closer to the stage 14 than the resonator array structure 500 and the support member 522, and are controlled by the controller 11 to introduce a third process gas into the processing space S. From the side gas injection units 213h, for example, one or more third process gases selected from nitrogen (N2) gas and ammonia (NH3) gas are introduced into the processing space S. Note that the second process gas and the third process gas in the fourth modification may be the same as or different from the second process gas in the third modification.

[0106] When the RF power supply 216a is controlled by the control device 11 to supply electromagnetic waves and electromagnetic waves are supplied from the antenna 230, plasma P1 of the first process gas is generated in the generation space T1 on the upper surface side of the resonator array structure 400 by the electromagnetic waves having an output frequency Fo(1). Radicals (active species) contained in the generated plasma P1 are supplied to the generation space T2 through the through holes of the resonator array structure 400.

[0107] In the generation space T2, the radicals supplied from the generation space T1 side are mixed with the second processing gas to generate new radicals (active species), such as NH* and NH2* molecules. Furthermore, in the generation space T2, a plasma P2 of the mixed gas is generated on the upper surface side of the resonator array 500 by the electromagnetic wave of the output frequency Fo(2). Since the generation space T1 has a negative refractive index, the electromagnetic wave of the output frequency Fo(2) transmits through the generation space T1 and the resonator array 400 and resonates with each resonator of the resonator array 500. The radicals (active species) contained in the generated plasma P2 are supplied to the processing space S through the through-holes of the resonator array 500.

[0108] In the processing space S, the radicals supplied from the generation space T2 side are mixed with the third processing gas to generate new radicals (active species), such as NH* and NH2* molecules. The radicals generated in the processing space S are preferably different from the radicals generated in the generation space T2. The workpiece WP is processed by the radicals generated in the generation space T2 and the processing space S.

[0109] The resonator array structures 400, 500 may be arranged on grid plates provided at substantially the same positions as the support members 422, 522, instead of the support members 422, 522. In this case, the second process gas and the third process gas may be supplied to the generation space T2 and the process space S through the grid plates, respectively. Each grid plate is made of, for example, a metal or a dielectric material.

[0110] In this manner, in the fourth modification, the processing gas is decomposed with different plasma energies in the generation space T2 and the processing space S, so that radicals can be generated and controlled as desired. In addition, by setting the resonant frequencies of the resonators of the resonator array structures 400 and 500 and the output frequencies of the corresponding RF power supplies 216a to different frequencies, radicals can be generated in multiple stages, and the radical density can be increased. The number of stages in the resonator array structure is not limited to two, and may be any number of stages.

[0111] Examples of the plasma treatment in Modifications 3 and 4 include nitridation treatment, oxidation treatment, oxynitridation treatment, hydrogen radical treatment, oxygen radical treatment, hydrogen and oxygen radical treatment, etc. Furthermore, examples of the plasma treatment include PEALD (Plasma Enhanced Atomic Layer Deposition) film formation treatment (precursor adsorption and nitridation or oxidation treatment), PECVD (Plasma Enhanced Chemical Vapor Deposition) film formation treatment, etc.

[0112] In the first embodiment described above, the resonator array structure 100 in which the multiple resonators 101 are arranged in a lattice pattern has been described, but the present invention is not limited to this. For example, the resonator array structure may be formed by combining multiple rectangular resonators in which multiple resonators 101 in the X-axis or Y-axis directions are integrated together.

[0113] In addition, the above-described embodiments and modifications may be combined as appropriate within the scope of the present invention. For example, the resonator array 100 of the first embodiment may be used in place of the resonator arrays 300, 400, and 500 of modifications 3 and 4.

[0114] According to each embodiment described above, the plasma processing apparatus (plasma processing apparatus 1, 201) includes a processing vessel (processing vessel 12, 212), a substrate holding unit (stage 14), a gas supply unit (gas supply unit 38, 238), an electromagnetic wave generator (microwave output device 16, RF power supply 216), an electromagnetic wave supply unit (antenna 18, 230), and a shower head (resonator array structure 100, 300). The processing vessel is configured to include a processing chamber (processing space S) that provides a processing space for a substrate (processing target WP), and a reaction chamber (generation space T) that provides a space for generating plasma. The substrate holding unit is configured to hold a substrate in the processing chamber. The gas supply unit is configured to supply a processing gas into the reaction chamber. The electromagnetic wave generator is configured to generate an electromagnetic wave for plasma excitation that is supplied into the reaction chamber. The electromagnetic wave supply unit is configured to supply an electromagnetic wave into the reaction chamber. The showerhead separates the processing chamber from the reaction chamber, and is configured to include a resonator array structure (resonator array structure 100, 300) including a plurality of resonators (resonators 101, 301) that can resonate with the magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged in the same plane direction, and a through hole (through hole 125, 308) that communicates the processing chamber with the reaction chamber. The showerhead supplies radicals contained in plasma generated on the reaction chamber side to the processing chamber side through the through hole. As a result, high-density radicals can be generated.

[0115] Moreover, according to each embodiment, the multiple resonators have a structure in which a C-shaped ring member (ring member 111, 311) made of a conductor is laminated on a dielectric (dielectric 112, 312). As a result, plasma can be excited.

[0116] Moreover, according to the first embodiment, each of the multiple resonators 101 is formed in a card shape for each set of two or more C-shaped ring members 111. Moreover, the multiple card-shaped resonators 101 are formed in a plane perpendicular to the partitioning direction of the shower head. As a result, the multiple resonators 101 can resonate with respect to the magnetic field H that is supplied from the antenna 18 and rotates around the Z axis.

[0117] Moreover, according to the first embodiment, each of the multiple resonators 101 includes a set of two or more C-shaped ring members 111, and is formed into a strip shape by connecting the multiple sets. Moreover, the multiple strip-shaped resonators 101 are formed in a plane perpendicular to the partitioning direction of the shower head. As a result, the multiple resonators 101 can resonate with the magnetic field H that is supplied from the antenna 18 and rotates around the Z axis.

[0118] Moreover, according to the second embodiment, each of the multiple resonators 301 includes a set of two or more C-shaped ring members 311. The multiple resonators 301 are formed in a plane parallel to the partition direction surface of the shower head. As a result, the multiple resonators 301 can resonate with the magnetic field H in the Z-axis direction supplied from the antenna 230.

[0119] Furthermore, according to each embodiment, the electromagnetic wave supplying unit supplies a magnetic field component perpendicular to the direction of a plane in which the multiple resonators are arranged, so that plasma can be excited in the resonator array structure.

[0120] Furthermore, according to each embodiment, the shower head includes a temperature control function (heater 126, 314). As a result, it is possible to control the temperature of the resonator array structure that also serves as the shower head.

[0121] According to each embodiment, the processing vessel includes a plurality of reaction chambers (generation spaces T1, T2). The electromagnetic wave generator (RF power source 216a) supplies electromagnetic waves of different frequencies corresponding to each of the plurality of reaction chambers. As a result, the density of radicals can be increased.

[0122] According to each embodiment, the shower head is disposed so that the surface facing the processing chamber faces the substrate holding surface (electrostatic chuck 14c) of the substrate holding unit. The plasma processing apparatus further includes a driving mechanism capable of changing the distance between the surface of the shower head facing the processing chamber and the substrate holding surface. As a result, the density of radicals in contact with the workpiece WP can be controlled.

[0123] According to each embodiment, the driving mechanism moves the substrate holder up and down, so that the density of radicals coming into contact with the workpiece WP can be controlled.

[0124] According to each embodiment, the driving mechanism moves the shower head up and down, so that the density of the radicals coming into contact with the workpiece WP can be controlled.

[0125] According to each embodiment, the showerhead adjusts the conductance between the reaction chamber and the processing chamber so that the pressure in the reaction chamber is higher than the pressure in the processing chamber, thereby controlling the amount of radicals generated in the reaction chamber that are supplied to the processing chamber.

[0126] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0127] In the above first embodiment, for example, the cell-type resonator array structure 100 has been described by arranging a plurality of resonators 101, etc., which can resonate with the magnetic field component of an electromagnetic wave and have a size smaller than the wavelength of the electromagnetic wave, in a lattice pattern on the base plate 120. However, the arrangement of the plurality of resonators 101, etc. may be any arrangement in a direction along the plane of the base plate 120. For example, the plurality of resonators 101 may be arranged at predetermined intervals along one direction. Also, for example, the plurality of resonators 101 may be arranged radially from the center of the base plate 120 (radial metamaterial).

[0128] In addition, in each of the above embodiments, a monopole antenna and an inductively coupled coil are used as antennas that input electromagnetic waves, but the present invention is not limited to this as long as a magnetic field can be generated in a direction that penetrates the ring members 111 of the multiple resonators 101 of the resonator array structure 100. Antennas that input such electromagnetic waves are not limited to monopole antennas and inductively coupled coils, and any antenna or mechanism that inputs electromagnetic waves, such as a slot antenna, a capacitively coupled electrode, or a magnetron, can be used.

[0129] The present disclosure can also be configured as follows. (1) A processing vessel configured to include a processing chamber that provides a space for processing a substrate and a reaction chamber that provides a space for generating plasma; a substrate holder configured to hold the substrate within the process chamber; a gas supply configured to supply a process gas into the reaction chamber; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation to be supplied into the reaction chamber; an electromagnetic wave supply unit configured to supply the electromagnetic wave into the reaction chamber; a resonator array structure that separates the processing chamber from the reaction chamber, the resonator array structure including a plurality of resonators that can resonate with a magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged in the same plane direction; and a showerhead configured to include a through hole that communicates between the processing chamber and the reaction chamber; the shower head supplies radicals contained in the plasma generated in the reaction chamber to the processing chamber through the through holes; Plasma processing equipment. (2) The plurality of resonators each have a structure in which a C-shaped ring member made of a conductor is laminated on a dielectric. The plasma processing apparatus according to (1) above. (3) each of the plurality of resonators is formed in a card shape for each set of two or more of the C-shaped ring members; The plurality of card-shaped resonators are formed in the direction of the plane perpendicular to a partition direction surface of the shower head. The plasma processing apparatus according to (2) above. (4) Each of the plurality of resonators includes a set of two or more of the C-shaped ring members, and is formed into a rectangular shape by connecting the sets, The plurality of rectangular resonators are formed in the direction of the plane perpendicular to a partitioning direction of the shower head. The plasma processing apparatus according to (2) above. (5) Each of the plurality of resonators includes a set of two or more C-shaped ring members, The plurality of resonators are formed in the direction of the plane parallel to a partition direction surface of the shower head. The plasma processing apparatus according to (2) above. (6) the electromagnetic wave supplying unit supplies a magnetic field component perpendicular to a direction of the plane on which the plurality of resonators are arranged. The plasma processing apparatus according to any one of (1) to (5) above. (7) The shower head includes a temperature control function. The plasma processing apparatus according to any one of (1) to (6) above. (8) the processing vessel includes a plurality of the reaction chambers, The electromagnetic wave generator supplies electromagnetic waves of different frequencies corresponding to each of the plurality of reaction chambers. The plasma processing apparatus according to any one of (1) to (7) above. (9) the shower head is disposed such that a surface of the shower head facing the processing chamber faces a substrate holding surface of the substrate holding part, a driving mechanism capable of changing a distance between a surface of the shower head facing the processing chamber and the substrate holding surface; The plasma processing apparatus according to any one of (1) to (8) above. (10) The driving mechanism moves the substrate holder in a vertical direction. The plasma processing apparatus according to (9) above. (11) The driving mechanism moves the shower head in a vertical direction. The plasma processing apparatus according to (9) above. (12) the showerhead adjusts conductance between the processing chamber and the reaction chamber so that the pressure in the reaction chamber is higher than the pressure in the processing chamber; The plasma processing apparatus according to any one of (1) to (11) above. (13) a resonator array structure including a plurality of resonators arranged in the same plane, the resonators being capable of resonating with a magnetic field component of an electromagnetic wave for plasma excitation, the resonators having a size smaller than the wavelength of the electromagnetic wave; a through hole communicating a processing chamber that provides a space for processing a substrate and a reaction chamber that provides a space in which plasma is generated by the electromagnetic waves; a through hole which separates the processing chamber from the reaction chamber and through which radicals contained in the plasma generated in the reaction chamber are supplied to the processing chamber; Shower head. (14) The plurality of resonators each have a structure in which a C-shaped ring member made of a conductor is laminated on a dielectric. The showerhead according to (13) above. (15) each of the plurality of resonators is formed in a card shape for each set of two or more of the C-shaped ring members; The plurality of card-shaped resonators are formed in the direction of the plane perpendicular to a partition direction surface of the shower head. The showerhead according to (14) above. (16) Each of the plurality of resonators includes a set of two or more of the C-shaped ring members, and is formed into a rectangular shape by connecting the sets, The plurality of rectangular resonators are formed in the direction of the plane perpendicular to a partitioning direction of the shower head. The showerhead according to (14) above. (17) Each of the plurality of resonators includes a set of two or more C-shaped ring members, The plurality of resonators are formed in the direction of the plane parallel to a partition direction surface of the shower head. The showerhead according to (14) above. (18) Further having a temperature control function, The showerhead according to any one of (13) to (17) above. [Explanation of symbols]

[0130] 1,201 Plasma processing equipment 12,212 Processing vessels 14 Stages 14c Electrostatic Chuck 16 Microwave output device 18,230 antennas 38,238 Gas Supply Department 100,300,400,500 Resonator Array Structure 101,301 Resonator 111,311 リング parts 112,312 Dielectric 125,308 Through holes 126,314 ヒータ 216,216a RF Power Supply S Processing space T,T1,T2 Generate Space WP Processed Object

Claims

1. A processing vessel configured to include a processing chamber that provides a space for processing a substrate and a reaction chamber that provides a space for generating plasma; a substrate holder configured to hold the substrate within the process chamber; a gas supply configured to supply a process gas into the reaction chamber; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation to be supplied into the reaction chamber; an electromagnetic wave supply unit configured to supply the electromagnetic wave into the reaction chamber; a resonator array structure that separates the processing chamber from the reaction chamber, the resonator array structure including a plurality of resonators that can resonate with a magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged in the same plane direction; and a showerhead configured to include a through hole that communicates between the processing chamber and the reaction chamber; the shower head supplies radicals contained in the plasma generated in the reaction chamber to the processing chamber through the through holes; Plasma processing equipment.

2. The plurality of resonators each have a structure in which a C-shaped ring member made of a conductor is laminated on a dielectric. The plasma processing apparatus according to claim 1 .

3. each of the plurality of resonators is formed in a card shape for each set of two or more of the C-shaped ring members; The plurality of card-shaped resonators are formed in the direction of the plane perpendicular to a partition direction surface of the shower head. The plasma processing apparatus according to claim 2 .

4. Each of the plurality of resonators includes a set of two or more C-shaped ring members, and is formed into a rectangular shape by connecting the sets, The plurality of rectangular resonators are formed in the direction of the plane perpendicular to a partitioning direction of the shower head. The plasma processing apparatus according to claim 2 .

5. Each of the plurality of resonators includes a set of two or more C-shaped ring members, The plurality of resonators are formed in the direction of the plane parallel to a partition direction surface of the shower head. The plasma processing apparatus according to claim 2 .

6. the electromagnetic wave supplying unit supplies a magnetic field component perpendicular to a direction of the plane on which the plurality of resonators are arranged.

3. The plasma processing apparatus according to claim 1 or 2.

7. The shower head includes a temperature control function.

3. The plasma processing apparatus according to claim 1 or 2.

8. the processing vessel includes a plurality of the reaction chambers, The electromagnetic wave generator supplies electromagnetic waves of different frequencies corresponding to each of the plurality of reaction chambers.

3. The plasma processing apparatus according to claim 1 or 2.

9. the shower head is disposed such that a surface of the shower head facing the processing chamber faces a substrate holding surface of the substrate holding part, a driving mechanism capable of changing a distance between a surface of the shower head facing the processing chamber and the substrate holding surface; 3. The plasma processing apparatus according to claim 1 or 2.

10. The driving mechanism moves the substrate holder in a vertical direction. The plasma processing apparatus according to claim 9 .

11. The driving mechanism moves the shower head in a vertical direction. The plasma processing apparatus according to claim 9 .

12. the showerhead adjusts conductance between the processing chamber and the reaction chamber so that the pressure in the reaction chamber is higher than the pressure in the processing chamber; 3. The plasma processing apparatus according to claim 1 or 2.

13. a resonator array structure including a plurality of resonators arranged in the same plane, the resonators being capable of resonating with a magnetic field component of an electromagnetic wave for plasma excitation, the resonators having a size smaller than the wavelength of the electromagnetic wave; a through hole communicating a processing chamber that provides a space for processing a substrate and a reaction chamber that provides a space in which plasma is generated by the electromagnetic waves; a through hole which separates the processing chamber from the reaction chamber and through which radicals contained in the plasma generated in the reaction chamber are supplied to the processing chamber; Shower head.

14. The plurality of resonators each have a structure in which a C-shaped ring member made of a conductor is laminated on a dielectric.

14. The showerhead of claim 13.

15. each of the plurality of resonators is formed in a card shape for each set of two or more of the C-shaped ring members; The plurality of card-shaped resonators are formed in the direction of the plane perpendicular to a partition direction surface of the shower head.

15. The showerhead of claim 14.

16. Each of the plurality of resonators includes a set of two or more C-shaped ring members, and is formed into a rectangular shape by connecting the sets, The plurality of rectangular resonators are formed in the direction of the plane perpendicular to a partitioning direction of the shower head.

15. The showerhead of claim 14.

17. Each of the plurality of resonators includes a set of two or more C-shaped ring members, The plurality of resonators are formed in the direction of the plane parallel to a partition direction surface of the shower head.

15. The showerhead of claim 14.

18. Further having a temperature control function, 15. The showerhead of claim 13 or 14.

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