Device, method and system for processing

Abstract

To provide a processing device that properly forms a structure in an object.SOLUTION: A processing device for processing an object by irradiating a surface of the object with processing light includes a light irradiation device for emitting first processing light to form a first irradiation region at the surface and emitting second processing light to form a second irradiation region at least partially overlapping on the first irradiation region at the surface. The light irradiation device includes a change member capable of changing an overlapping state between the first and second irradiation regions.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to the technical field of a processing apparatus, a processing method, and a processing system capable of processing an object by irradiating the object with processing light. [Background technology]

[0002] As an example of a processing device capable of processing an object, Patent Document 1 describes a processing device that irradiates a laser beam onto the surface of an object to form a structure. This type of processing device is required to appropriately form a structure on the object. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] U.S. Patent No. 4,994,639 Summary of the Invention

[0004] According to a first aspect, there is provided a processing apparatus for processing an object by irradiating a surface of the object with processing light, the processing apparatus comprising a light irradiation device that irradiates a first processing light to form a first irradiation area on the surface and irradiates a second processing light to form a second irradiation area on the surface that at least partially overlaps with the first irradiation area, the light irradiation device having a change member that can change the overlap state of the first and second irradiation areas.

[0005] According to a second aspect, there is provided a processing method for processing an object by irradiating a surface of the object with processing light, the processing method including irradiating a first processing light to form a first irradiation area on the surface, irradiating a second processing light to form a second irradiation area on the surface that partially overlaps with the first irradiation area, and changing the overlap state of the first and second irradiation areas.

[0006] According to a third aspect, there is provided a processing apparatus that processes an object by irradiating the object with processing light, comprising a first optical system that splits incident light into a first light and a second light, a second optical system that returns the first light from the first optical system to the first optical system as a third light, and a third optical system that returns the second light from the first optical system to the first optical system as a fourth light, wherein the first optical system emits the third light from the second optical system and the fourth light from the third optical system as a plurality of the processing lights that are irradiated to different positions on the surface of the object.

[0007] According to a fourth aspect, there is provided a processing apparatus including a light irradiation device that irradiates an object with a plurality of processing light beams to process the object, and an irradiation position changing device that changes the relative positional relationship of the irradiation positions of the plurality of processing light beams on the surface of the object so that a desired pattern structure is formed on the object.

[0008] According to a fifth aspect, there is provided a processing system for processing an object to irradiate a processing light onto the object to form a pattern structure on the object extending in a desired direction, the processing system comprising: a first movable device movable to change the relative position between the irradiation position of the processing light in a first direction along the surface of the object and the surface of the object; and a second movable device movable to change the relative position between the irradiation position of the processing light and the surface of the object in a second direction along the surface of the object and intersecting the first direction, the second movable device being heavier and / or larger than the first movable device, wherein the first and second movable devices are aligned with respect to the surface so that a first angle formed between an axis extending in the desired direction and an axis extending in the first direction is smaller than a second angle formed between an axis extending in the desired direction and an axis extending in the second direction.

[0009] According to a sixth aspect, there is provided a processing system comprising: a processing device that processes an object so as to irradiate processing light onto the object to form a pattern structure extending in a desired direction on a surface of the object; and a control device that controls the processing device to form the pattern structure based on pattern information regarding the pattern structure generated from a simulation model that simulates the object on which the pattern structure is formed.

[0010] According to a seventh aspect, there is provided a processing system comprising a light irradiation device which irradiates a processing light onto a surface of an object, and a position changing device which changes the relative position between a target irradiation position of the processing light on the surface of the object and the surface, and which alternately repeats, using the light irradiation device and the position changing device, a first operation of scanning the processing light over the surface along a first axis along the surface and a second operation of changing the relative position between the processing light and the surface along a second axis which intersects the first axis and is along the surface, the first operation including a first scanning operation of scanning the processing light over the surface so that the target irradiation position moves relative to the surface toward a first direction along the first axis, and a second scanning operation of scanning the processing light over the surface so that the target irradiation position moves relative to the surface toward a second direction along the first axis and opposite to the first direction.

[0011] According to an eighth aspect, there is provided a processing system that irradiates a processing light from a light source onto a surface of an object to process the surface, the processing system comprising: a first optical system arranged in the optical path of the processing light from the light source; and a second optical system arranged in the optical path of the processing light from the light source and focusing the processing light on the surface, wherein the size of the beam cross section at the convergence position of the processing light via the first and second optical systems is larger than the size of the beam cross section at the convergence position of the processing light via the second optical system. [Brief description of the drawings]

[0012] [Figure 1] FIG. 1 is a cross-sectional view that illustrates a schematic overall structure of a processing system according to a first embodiment. [Diagram 2] 2(a) and 2(b) are cross-sectional views each showing a schematic state of processing of a coating film formed on the surface of an object to be processed. [Diagram 3] FIG. 3 is a perspective view illustrating a light irradiation device included in the processing system of the first embodiment. [Figure 4] FIG. 4 is a cross-sectional view showing the structure of the multi-beam optical system. [Diagram 5] Figure 5(a) is a plan view showing beam spots formed on a specified optical surface by multiple processing light beams emitted by a multi-beam optical system, and Figure 5(b) is a plan view showing beam spots formed on a coating film by multiple processing light beams emitted by the multi-beam optical system. [Figure 6] FIG. 6(a) is a cross-sectional view showing a cross section of the riblet structure formed by the processing system of the first embodiment, and FIG. 6(b) is a perspective view showing the riblet structure formed by the processing system of the present embodiment. [Figure 7] Figures 7(a) and 7(b) are each a front view showing an aircraft, which is an example of a workpiece on which a riblet structure is formed, and Figure 7(c) is a side view showing an aircraft, which is an example of a workpiece on which a riblet structure is formed. [Figure 8] FIG. 8 is a plan view showing a plurality of processing shot areas set on the surface of the coating film SF. [Figure 9] FIG. 9 is a cross-sectional view showing a processing device performing one step of a processing operation for forming a riblet structure. [Figure 10] Figure 10(a) is a cross-sectional view showing a processing device performing one step of a processing operation to form a riblet structure, and Figure 10(b) is a plan view showing the surface of a paint film during one step of the processing operation shown in Figure 10(a). [Figure 11] FIG. 11 is a plan view showing the scanning trajectory of the processing light (that is, the movement trajectory of the target irradiation area) during the period in which the scanning operation and the stepping operation are repeated. [Figure 12] FIG. 12 is a cross-sectional view showing a processing device performing one step of a processing operation for forming a riblet structure. [Figure 13] Figure 13(a) is a cross-sectional view showing a processing device performing one step of a processing operation to form a riblet structure, and Figure 13(b) is a plan view showing the surface of a paint film during one step of the processing operation shown in Figure 13(a). [Figure 14] FIG. 14 is a cross-sectional view showing a processing device performing one step of a processing operation for forming a riblet structure. [Figure 15] FIG. 15 is a cross-sectional view showing a processing device performing one step of a processing operation for forming a riblet structure. [Figure 16] FIG. 16 is a cross-sectional view showing a processing device performing one step of a processing operation for forming a riblet structure. [Figure 17] FIG. 17 is a cross-sectional view showing a processing device performing one step of a processing operation for forming a riblet structure. [Figure 18] FIG. 18 is a cross-sectional view showing a processing device performing one step of a processing operation for forming a riblet structure. [Figure 19] FIG. 19 is a cross-sectional view showing a processing device performing one step of a processing operation for forming a riblet structure. [Figure 20] FIG. 20 is a cross-sectional view showing a schematic diagram of another example of the multi-beam optical system. [Figure 21] FIG. 21 is a cross-sectional view showing a plurality of multi-beam optical systems included in the light irradiation device of the second embodiment. [Figure 22] Figure 22(a) is a cross-sectional view showing typically how each of the multiple multi-beam optical systems divides the light source light into multiple processing light, and Figure 22(b) is a plan view showing the beam spots formed on a specified optical surface by the multiple processing light ELk emitted by each of the multiple multi-beam optical systems. [Diagram 23] FIG. 23 is a cross-sectional view showing a multi-beam optical system according to the third embodiment. [Figure 24]Figure 24(a) is a cross-sectional view showing the multi-beam optical system before the reflecting mirror is moved, Figure 24(b) is a plan view showing multiple beam spots formed on the coating film by multiple processing light beams emitted from the multi-beam optical system in the state shown in Figure 24(a), Figure 24(c) is a cross-sectional view showing the multi-beam optical system after the reflecting mirror is moved, and Figure 24(d) is a plan view showing multiple beam spots formed on the coating film by multiple processing light beams emitted from the multi-beam optical system in the state shown in Figure 24(c). [Diagram 25] Figure 25(a) is a plan view showing the positional relationship of the multiple irradiation areas before the reflecting mirror is moved, Figure 25(b) is a cross-sectional view showing the concave structure formed when the multiple irradiation areas shown in Figure 25(a) are set, Figure 25(c) is a plan view showing the positional relationship of the multiple irradiation areas after the reflecting mirror is moved, and Figure 25(d) is a cross-sectional view showing the concave structure formed when the multiple irradiation areas shown in Figure 25(c) are set. [Figure 26] Figure 26(a) is a plan view showing the positional relationship of multiple partially overlapping irradiation areas, and Figure 26(b) is a cross-sectional view showing the concave structure formed when the multiple irradiation areas shown in Figure 26(a) are set. [Figure 27] Figure 27(a) is a plan view showing the positional relationship of four non-overlapping irradiation areas, Figure 27(b) is a cross-sectional view showing the concave structure formed when the multiple irradiation areas shown in Figure 27(a) are set, Figure 27(c) is a plan view showing the positional relationship of four partially overlapping irradiation areas, Figure 27(d) is a cross-sectional view showing the concave structure formed when the multiple irradiation areas shown in Figure 27(c) are set, Figure 27(e) is a plan view showing the positional relationship of four partially overlapping irradiation areas, and Figure 27(f) is a cross-sectional view showing the concave structure formed when the multiple irradiation areas shown in Figure 27(c) are set. [Figure 28] FIG. 28 is a perspective view showing a light irradiation device according to the fourth embodiment. [Figure 29]Figure 29(a) is a cross-sectional view showing processing light irradiated onto a coating film via a relay optical system, and Figure 29(b) is a cross-sectional view showing processing light irradiated onto a coating film without passing through a relay optical system. [Diagram 30] FIG. 30 is a cross-sectional view showing the strength adjusting device of the fifth embodiment. [Diagram 31] FIG. 31 is a graph showing the relationship between the intensity of a plurality of processing beams and the rotation angle of the wave plate. [Diagram 32] FIG. 32 is a cross-sectional view showing the strength adjusting device of the sixth embodiment. [Diagram 33] Each of Figures 33(a) to 33(c) shows the process in which light from a light source is branched into multiple processing lights via an intensity adjustment device and a multi-beam optical system, along with the intensity of the light generated during that process and the beam spot that the light forms on the coating film. [Diagram 34] Each of Figures 34(a) to 34(c) shows the process in which light source light is split into multiple processing light beams by a multi-beam optical system without passing through an intensity adjustment device, along with the intensity of the light generated during this process and the beam spot that the light forms on the coating film. [Diagram 35] FIG. 35 is a perspective view showing a multi-beam optical system according to the seventh embodiment. [Diagram 36] FIG. 36 is a perspective view showing a process in which the multi-beam optical system of the seventh embodiment splits the light source light into a plurality of processing lights ELk. [Figure 37] FIG. 37 is a perspective view showing a process in which the multi-beam optical system of the seventh embodiment splits the light source light into a plurality of processing lights ELk. [Figure 38] FIG. 38 is a perspective view showing a process in which the multi-beam optical system of the seventh embodiment splits the light source light into a plurality of processing lights ELk. [Figure 39] FIG. 39 is a perspective view showing a process in which the multi-beam optical system of the seventh embodiment splits the light source light into a plurality of processing lights ELk. [Diagram 40] FIG. 40 is a perspective view showing another example of the multi-beam optical system according to the seventh embodiment. [Diagram 41]FIG. 41 is a perspective view showing a multi-beam optical system according to the eighth embodiment. [Diagram 42] Each of Fig. 42(a) and Fig. 42(b) is a plan view showing the positional relationship between a polarizing beam splitter and a reflecting prism provided in the multi-beam optical system of the eighth embodiment. [Diagram 43] Figure 43(a) is a plan view showing the movement trajectory of the target irradiation area on the paint film when the Y-axis direction is set as the scanning direction, Figure 43(b) is an oblique view showing the riblet structure formed by the processing system under the circumstances shown in Figure 43(a), Figure 43(c) is a plan view showing the movement trajectory of the target irradiation area on the paint film when the X-axis direction is set as the scanning direction, and Figure 43(d) is an oblique view showing the riblet structure formed by the processing system under the circumstances shown in Figure 43(c). [Diagram 44] FIG. 44 is a cross-sectional view showing an example of a drive system for moving the light irradiation device. [Diagram 45] FIG. 45 is a cross-sectional view showing an example of a stage device for moving an object to be processed. [Diagram 46] FIG. 46 is a cross-sectional view showing an example of the structure of the light irradiation device according to the tenth embodiment. [Figure 47] FIG. 47(a) is a cross-sectional view showing a cross section along the XZ plane of processing light irradiated onto a coating film via a magnifying optical system in association with a cross section along the XY plane of the processing light, and FIG. 47(b) is a cross-sectional view showing a cross section along the XZ plane of processing light irradiated onto a coating film without passing through a magnifying optical system in association with a cross section along the XY plane of the processing light. [Figure 48] Figure 48(a) is a cross-sectional view showing how a comparative example processing system not equipped with a magnifying optical system processes a coating film with a relatively coarse fineness using processing light having a wavelength capable of processing the coating film with a relatively fine fineness, and Figure 48(b) is a cross-sectional view showing how a processing system of the tenth embodiment equipped with a magnifying optical system processes a coating film with a relatively coarse fineness using processing light having a wavelength capable of processing the coating film with a relatively fine fineness. [Figure 49]FIG. 49 is a cross-sectional view showing a state in which a plurality of processing beams are superimposed on each other. [Figure 50] FIG. 50 is a cross-sectional view showing processing light irradiated onto a coating film from an optical system including an NA adjustment optical element and processing light irradiated onto a coating film from an optical system not including an NA adjustment optical element. [Figure 51] FIG. 51 is a cross-sectional view showing another example of the structure of the light irradiation device according to the tenth embodiment. [Figure 52] FIG. 52 is a plan view showing an example of a movement trajectory of the target irradiation area. [Figure 53] FIG. 53 is a plan view showing an example of a movement trajectory of the target irradiation area. [Figure 54] FIG. 54 is a plan view showing an example of a movement trajectory of the target irradiation area. [Figure 55] FIG. 55 is a plan view showing an example of the movement trajectory of the target irradiation area when the movement direction is set so as to satisfy the first criterion. [Figure 56] FIG. 56 is a plan view showing an example of the movement trajectory of the target irradiation area when the movement direction is set so as to satisfy the second criterion. [Figure 57] FIG. 57 is a plan view showing an example of the movement trajectory of the target irradiation area when the movement direction is set so as to satisfy the third criterion. [Figure 58] FIG. 58 is a plan view showing an example of a movement trajectory of the target irradiation area EA in the processing area shown in FIG. 57 when the movement direction of the target irradiation area EA is set so as to satisfy the first criterion. [Figure 59] FIG. 59 is a plan view showing an example of the movement trajectory of the target irradiation area when the movement direction is set so as to satisfy the fourth criterion. [Figure 60] FIG. 60 is a plan view showing an example of a movement trajectory of the target irradiation area EA in the processing area shown in FIG. 59 when the movement direction of the target irradiation area EA is set so as to satisfy the first criterion. [Figure 61] FIG. 61 is a plan view showing a modified example of the scanning trajectory of the processing light (that is, the movement trajectory of the target irradiation area) during the period in which the scanning operation and the stepping operation are repeated. [Figure 62] FIG. 62 is a plan view showing an example in which, when scanning the target irradiation area multiple times, the position of the target irradiation area is changed each time. [Figure 63] FIG. 63(a) is a plan view showing an example in which the sizes of a plurality of target irradiation regions are changed, and FIG. 63(b) is a cross-sectional view showing an example in which the focusing positions of a plurality of processing beams are changed from one another. [Figure 64] Each of Figures 64(a) to 64(c) is a cross-sectional view showing a cross section of a riblet structure. [Figure 65] Each of Figs. 65(a) to 65(h) is a diagram showing an example in which, when scanning the target irradiation area multiple times, the position of the target irradiation area is changed each time. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] Hereinafter, embodiments of a processing device, a processing method, and a processing system will be described with reference to the drawings. Hereinafter, the embodiments of the processing device, the processing method, and the processing system will be described using a processing system SYS that processes a coating film SF formed on a surface of a processing target S using processing light ELk. However, the present invention is not limited to the embodiments described below.

[0014] In the following description, the positional relationship of various components constituting the machining system SYS will be described using an XYZ orthogonal coordinate system defined by mutually orthogonal X-axis, Y-axis, and Z-axis. For convenience of explanation, the X-axis direction and the Y-axis direction are each assumed to be horizontal (i.e., a predetermined direction in a horizontal plane), and the Z-axis direction is assumed to be vertical (i.e., a direction perpendicular to the horizontal plane, essentially an up-down direction). The rotation directions (in other words, tilt directions) around the X-axis, Y-axis, and Z-axis are referred to as the θX direction, the θY direction, and the θZ direction, respectively. Here, the Z-axis direction may be the direction of gravity. The XY plane may be the horizontal direction.

[0015] (1) Machining system SYSa according to the first embodiment First, a machining system SYS of a first embodiment (hereinafter, the machining system SYS of the first embodiment will be referred to as a "machining system SYSa") will be described.

[0016] (1-1) Structure of the processing system SYSa First, the structure of the processing system SYSa of the first embodiment will be described with reference to Fig. 1. Fig. 1 is a cross-sectional view that typically shows the structure of the processing system SYSa of the first embodiment.

[0017] As shown in FIG. 1, the processing system SYS processes a coating film SF formed (e.g., applied) on the surface of a processing object S. The processing object S may be, for example, a metal, an alloy (e.g., duralumin, etc.), a resin (e.g., CFRP (Carbon Fiber Reinforced Plastic), etc.), glass, or an object made of any other material. The coating film SF is a film of paint that covers the surface of the processing object S. For this reason, the coating film SF may be called a paint layer. The processing object S serves as a substrate for the coating film SF. The thickness of the coating film SF is, for example, several tens of micrometers to several hundreds of micrometers, but may be any other size. The paint constituting the coating film SF may include, for example, a resin-based paint, or may include other types of paint. The resin paint may include at least one of, for example, an acrylic paint (e.g., a paint containing an acrylic polyol), a polyurethane paint (e.g., a paint containing a polyurethane polyol), a polyester paint (e.g., a paint containing a polyester polyol), a vinyl paint, a fluorine-based paint (e.g., a paint containing a fluorine-based polyol), a silicone-based paint, and an epoxy-based paint.

[0018] FIG. 1 shows an example in which the processing system SYSa (particularly, a processing device 1 provided in the processing system SYSa, which will be described later) is disposed on a workpiece S having a surface along a horizontal plane (i.e., an XY plane). However, the processing system SYSa is not necessarily disposed on the workpiece S having a surface along a horizontal plane. For example, as will be described in detail later with reference to FIG. 5 etc., the processing system SYSa may be disposed on the workpiece S having a surface intersecting with the horizontal plane. The processing system SYSa may be disposed so as to be suspended from the workpiece S. In this case, the X-axis direction and the Y-axis direction may be defined as directions along (typically parallel directions) the surface of the workpiece S for convenience, and the Z-axis direction may be defined as a direction intersecting (typically perpendicular direction) the surface of the workpiece S for convenience.

[0019] The processing system SYSa irradiates the coating film SF with the processing light ELk in order to process the coating film SF. The processing light ELk may be any type of light as long as it can process the coating film SF by being irradiated to the coating film SF. As an example, the processing light ELk may be laser light. Furthermore, the processing light ELk may be light of any wavelength as long as it can process the coating film SF by being irradiated to the coating film SF. In the first embodiment, the processing light ELk is described using an example in which the processing light ELk is invisible light (for example, at least one of infrared light and ultraviolet light). That is, in the first embodiment, the processing light ELk is described using an example in which the processing light ELk is at least one of light having a wavelength included in a wavelength band shorter than the wavelength band of visible light and light having a wavelength included in a wavelength band longer than the wavelength band of visible light. However, the processing light ELk may be visible light.

[0020] Here, the processing of the coating film SF using the processing light ELk will be described with reference to Fig. 2(a) and Fig. 2(b). Fig. 2(a) and Fig. 2(b) are cross-sectional views each showing a schematic diagram of the processing of the coating film SF formed on the surface of the processing object S.

[0021] As shown in FIG. 2(a), the processing system SYSa irradiates the processing light ELk to the target irradiation area EA set on the surface of the coating film SF. The target irradiation area EA is an area where the processing system SYSa is scheduled to irradiate the processing light ELk. As shown in FIG. 2(a), when the processing light ELk is irradiated to the target irradiation area EA, a part of the coating film SF overlapping the target irradiation area EA (i.e., the coating film located on the -Z side of the target irradiation area EA) is evaporated by the processing light ELk. At this time, in the thickness direction of the coating film SF, not all of the coating film SF overlapping the target irradiation area EA is evaporated. That is, in the thickness direction of the coating film SF, a part of the coating film SF overlapping the target irradiation area EA (specifically, a part of the coating film SF relatively close to the target irradiation area EA) is evaporated, while the other part of the coating film SF overlapping the target irradiation area EA (specifically, a part of the coating film SF relatively far from the target irradiation area EA) is not evaporated. In other words, the coating film SF is evaporated only to the extent that the processing object S is not exposed from the coating film SF. For this reason, the characteristics of the processing light ELk may be set to desired characteristics that evaporate the coating film SF only to the extent that the workpiece S is not exposed from the coating film SF. The characteristics of the processing light ELk may be set to desired characteristics that do not affect the workpiece S by irradiation with the processing light ELk. The characteristics of the processing light ELk may be set to desired characteristics that affect only the coating film SF by irradiation with the processing light ELk. The characteristics of the processing light ELk may include at least one of the wavelength of the processing light ELk, the amount of energy per unit time and / or per unit area transmitted from the processing light ELk to the surface of the coating film SF, the intensity distribution of the processing light ELk on the surface of the coating film SF, the irradiation time of the processing light ELk to the surface of the coating film SF, and the size of the processing light ELk on the surface of the coating film SF (for example, at least one of the spot diameter and area).

[0022] At this time, the energy of the processing light ELk irradiated onto the coating film SF is determined so that the irradiation of the processing light ELk does not affect the work-piece S. The energy of the processing light ELk is determined so that the processing light ELk does not penetrate the coating film SF and reach the work-piece S. In other words, the energy of the processing light ELk is determined so that the irradiation of the processing light ELk affects only the coating film SF.

[0023] As a result, the coating film SF is removed in the portion where the coating film SF has evaporated. On the other hand, the coating film SF remains as it is in the portion where the coating film SF has not evaporated. That is, as shown in FIG. 2(b), the coating film SF is partially removed in the portion where the processing light ELk has been irradiated. As a result, as shown in FIG. 2(b), the thickness of the coating film SF is thinner in the portion where the processing light ELk has been irradiated than in the portion where the processing light ELk has not been irradiated. In other words, as shown in FIG. 2(b), on the surface of the workpiece S, there are a coating film SF that remains relatively thick because the processing light ELk has not been irradiated, and a coating film SF that has become relatively thin because the processing light ELk has been irradiated. That is, the thickness of the coating film SF is at least partially adjusted by the irradiation of the processing light ELk. A part of the coating film SF is removed in the thickness direction (the Z-axis direction in the example shown in FIG. 2(b)) by the irradiation of the processing light ELk. As a result, a recess (in other words, a groove portion) C corresponding to the portion where the coating film SF is relatively thin is formed on the surface of the coating film SF. Therefore, in this embodiment, the "operation of processing the coating film SF" includes at least one of the following operations: an operation of adjusting the thickness of the coating film SF, an operation of removing a portion of the coating film SF, and an operation of forming a recess C in the coating film SF.

[0024] The coating film SF evaporates by absorbing the processing light ELk. That is, the coating film SF is, for example, photochemically decomposed and removed by the energy of the processing light ELk being transmitted to the coating film SF. In addition, when the processing light ELk is a laser light, the phenomenon in which the energy of the processing light ELk is transmitted to the coating film SF and the coating film SF is photochemically decomposed and removed is sometimes called laser ablation. For this reason, the coating film SF contains a material capable of absorbing the processing light ELk. Specifically, for example, the coating film SF may contain a material whose absorptance for the processing light ELk (for example, when the processing light ELk is invisible light, its absorptance for light in a wavelength band including a wavelength different from the wavelength band of visible light) is equal to or greater than a predetermined first absorption threshold. In other words, a light component in a wavelength band whose absorptance by the coating film SF is equal to or greater than a predetermined first absorption threshold may be used as the processing light ELk.

[0025] The material constituting the coating film SF may contain a colorant (specifically, for example, at least one of a pigment and a dye). When the coating film SF contains a colorant, the colorant may be a colorant that exhibits a desired color when irradiated with visible light. As a result, the coating film SF containing such a colorant exhibits the desired color. In this case, the colorant may have a property that the absorptance of a light component in a first wavelength band including a wavelength that is reflected by the coating film SF and recognized by humans as light of a desired color among the wavelength bands of visible light is different from the absorptance of a light component in a second wavelength band of visible light that is different from the first wavelength band, so that the coating film SF exhibits the desired color. For example, the colorant may have a property that the absorptance of a light component in the first wavelength band is smaller than the absorptance of a light component in the second wavelength band. For example, the dye may have a characteristic that the absorptance of the light component in the first wavelength band is equal to or lower than a predetermined second absorption threshold (wherein the second absorption threshold is smaller than the first absorption threshold) and equal to or higher than a predetermined third absorption threshold (wherein the third absorption threshold is larger than the second absorption threshold). An example of a dye that can adequately absorb the invisible processed light ELk and exhibit a desired color is, for example, a near-infrared absorbing dye (e.g., tetrafluoroboronated 4-((E)-2-{(3E)-2-chloro-3-[2-(2,6-diphenyl-4H-thiopyran-4-ylidene)ethylidene]cyclohex-1-en-1-yl}vinyl)-2,6-diphenylthiopyrylium) manufactured by Spectrum Info, located in Kiev, Ukraine. In addition, when the coating film SF is transparent, the coating film SF does not need to contain a dye.

[0026] Alternatively, when the coating film SF contains a pigment, the pigment may be a pigment that is transparent to visible light. As a result, the coating film SF containing such a pigment becomes a transparent film (so-called clear coat). Note that the "transparent film" here may mean a film that allows light components of at least a part of the wavelength band of visible light to pass through. In this case, the pigment may have a property of not absorbing much visible light (i.e., reflecting it accordingly) so that the coating film SF becomes transparent. For example, the pigment may have a property that the absorptance of visible light is smaller than a predetermined fourth absorption threshold. An example of a dye that can adequately absorb the invisible processed light ELk while being transparent to visible light is, for example, a near-infrared absorbing dye manufactured by Spectrum Info (one example is tetrafluoroboronated 6-chloro-2-[(E)-2-(3-{(E)-2-[6-chloro-1-ethylbenzo[cd]indol-2(1H)-ylidene]ethylidene}-2-phenyl-1-cyclopenten-1-yl)ethenyl]-1-ethylbenzo[cd]indolium).

[0027] 1 again, in order to process the coating film SF, the processing system SYSa includes a processing device 1 and a control device 2. Furthermore, the processing device 1 includes a light irradiation device 11, a drive system 12, a storage device 13, a support device 14, a drive system 15, an exhaust device 16, and a gas supply device 17.

[0028] The light irradiation device 11 can irradiate the coating film SF with processing light ELk under the control of the control device 2. In order to irradiate the processing light ELk, the light irradiation device 11 includes a light source 110 capable of emitting source light ELs, a focus lens 111, a multi-beam optical system 112, a galvanometer mirror 113, and an fθ lens 114, as shown in Fig. 3, which is a perspective view showing the structure of the light irradiation device 11.

[0029] The light source 110 emits the source light ELo. The source light ELo is, for example, light having the same characteristics as the processing light ELk (for example, at least one of type, wavelength, and energy), but may be light having characteristics different from those of the processing light ELk. The light source 110 emits, for example, pulsed light as the source light ELo. The shorter the emission time width of the pulsed light (hereinafter referred to as the "pulse width"), the more the processing accuracy (for example, the formation accuracy of the riblet structure described later) improves. Therefore, the light source 1111 may emit pulsed light with a relatively short pulse width as the source light ELo. For example, the light source 1111 may emit pulsed light with a pulse width of 1000 nanoseconds or less as the source light ELo.

[0030] The focus lens 111 is an optical element composed of one or more lenses, and adjusts the focusing position of the source light ELo (i.e., the focal position of the light irradiation device 11) by adjusting the position of at least some of the lenses along the optical axis direction.

[0031] The multi-beam optical system 112 branches (in other words, separates or divides) the source light ELo from the light source 111 into a plurality of processing light ELk. In order to branch the source light ELo into a plurality of processing light ELk, the multi-beam optical system 112 includes a polarizing beam splitter 1121, a quarter-wave plate 1122, a reflecting mirror 1123, a quarter-wave plate 1124, and a reflecting mirror 1125, as shown in FIG. 4, which is a cross-sectional view showing the structure of the multi-beam optical system 112.

[0032] The source light ELo from the light source 111 is incident on a separation surface 11211 of the polarizing beam splitter 1121. The s-polarized light ELs1 of the source light ELo is reflected at the separation surface 11211. On the other hand, the p-polarized light ELp2 of the source light ELo passes through the separation surface 11211. In other words, the polarizing beam splitter 1121 splits the source light ELo into the s-polarized light ELs1 and the p-polarized light ELp2.

[0033] The s-polarized light ELs1 reflected by the polarizing beam splitter 1121 passes through the quarter-wave plate 1122. As a result, the s-polarized light ELs1 is converted into circularly polarized light ELc1. The circularly polarized light ELc1 that passed through the quarter-wave plate 1122 is reflected by the reflecting surface 11231 of the reflecting mirror 1123. The circularly polarized light ELc1 reflected by the reflecting mirror 1123 passes through the quarter-wave plate 1122 again and is converted into p-polarized light ELp1. The p-polarized light ELp1 that passed through the quarter-wave plate 1122 is incident on the separation surface 11211 of the polarizing beam splitter 1121.

[0034] On the other hand, the p-polarized light ELp2 that has passed through the polarizing beam splitter 1121 passes through the quarter-wave plate 1124. As a result, the p-polarized light ELp2 is converted into the circularly polarized light ELc2. The circularly polarized light ELc2 that has passed through the quarter-wave plate 1124 is reflected by the reflecting surface 11251 of the reflecting mirror 1125. The circularly polarized light ELc2 reflected by the reflecting mirror 1125 passes through the quarter-wave plate 1124 again and is converted into the s-polarized light ELs2. The s-polarized light ELs2 that has passed through the quarter-wave plate 1124 is incident on the separation surface 11211 of the polarizing beam splitter 1121.

[0035] The p-polarized light ELp1 incident on the separation surface 11211 passes through the separation surface 11211. The p-polarized light ELp1 that passed through the separation surface 11211 is emitted from the multi-beam optical system 112 toward the galvanometer mirror 113 as one of the multiple processing lights ELk. On the other hand, the s-polarized light ELs2 incident on the separation surface 11211 is reflected by the separation surface 11211. The s-polarized light ELs2 reflected by the separation surface 11211 is emitted from the multi-beam optical system 112 toward the galvanometer mirror 113 as one of the multiple processing lights ELk. In other words, the polarizing beam splitter 1121 not only functions as an optical system that splits the source light ELo into s-polarized light ELs1 and p-polarized light ELp2, but also functions as an optical system that merges the p-polarized light ELp1 and the s-polarized light ELs2 incident on the polarizing beam splitter 1121 from different directions into multiple processing lights ELk toward the galvanometer mirror 113.

[0036] Here, as shown in Fig. 4, the reflecting mirrors 1123 and 1125 are aligned so that the angle of incidence of the circularly polarized light ELc1 on the reflecting surface 11231 of the reflecting mirror 1123 is different from the angle of incidence of the circularly polarized light ELc2 on the reflecting surface 11251 of the reflecting mirror 1125. In other words, the reflecting mirrors 1123 and 1125 are aligned so that the angle between the reflecting surface 11231 of the reflecting mirror 1123 and an axis along the traveling direction of the circularly polarized light ELc1 is different from the angle between the reflecting surface 11251 of the reflecting mirror 1125 and an axis along the traveling direction of the circularly polarized light ELc2. Fig. 4 shows an example in which the reflecting mirrors 1123 and 1125 are aligned so that the circularly polarized light ELc1 is perpendicularly incident on the reflecting surface 11231, while the circularly polarized light ELc2 is obliquely incident on the reflecting surface 11251. As a result, an axis along the traveling direction of the p-polarized light ELp1 that has passed through the separation surface 11211 intersects with an axis along the traveling direction of the s-polarized light ELs2 that has been reflected by the separation surface 11211. That is, a plurality of axes along the traveling directions of the plurality of processing light ELk emitted from the multi-beam optical system 112 intersect. In this case, the reflecting mirrors 1123 and 1125 can function as an optical system that makes the traveling directions of the plurality of processing light ELk different from each other. As a result, as shown in FIG. 5(a), on an optical surface that intersects with the traveling directions of the plurality of processing light ELk, the plurality of processing light ELk passes through different positions. That is, on an optical surface that intersects with the traveling directions of the plurality of processing light ELk, the plurality of processing light ELk each forms a plurality of beam spots. As a result, when such a plurality of processing light ELk is irradiated onto the coating film SF, the plurality of processing light ELk each forms a plurality of beam spots (i.e., irradiation areas) on the coating film SF, as shown in FIG. 5(b). That is, the multi-beam optical system 112 emits a plurality of processing lights ELk that are respectively irradiated to different positions on the coating film SF. As a result, the coating film SF is simultaneously irradiated with a plurality of processing lights ELk. That is, a plurality of target irradiation areas EA are simultaneously set on the coating film SF.

[0037] 3 again, the galvanometer mirror 113 is disposed on the optical path of the multiple processing lights ELk. The galvanometer mirror 113 is disposed between the multi-beam optical system 112 and the fθ lens 114. The galvanometer mirror 113 deflects the multiple processing lights ELk emitted by the multi-beam optical system 112 so that the multiple processing lights ELk scan the surface of the coating film SF (i.e., multiple target irradiation areas EA onto which the multiple processing lights ELk are respectively irradiated move on the surface of the coating film SF). Note that the multiple processing lights ELk emitted by the multi-beam optical system 112 may sweep the surface of the coating film SF by the galvanometer mirror 113. The galvanometer mirror 113 includes an X-scanning mirror 113X and a Y-scanning mirror 113Y. The Y-scanning mirror 113Y reflects the multiple processing lights ELk emitted by the multi-beam optical system 112 toward the X-scanning mirror 113X. The Y-scanning mirror 113Y can be swung or rotated in the θX direction (i.e., the direction of rotation around the X-axis). By the swing or rotation of the Y-scanning mirror 113Y, the multiple processing lights ELk scan the surface of the coating film SF along the Y-axis direction. By the swing or rotation of the Y-scanning mirror 113Y, the multiple processing lights ELk sweep the surface of the coating film SF along the Y-axis direction. By the swing or rotation of the Y-scanning mirror 113Y, the traveling direction of the multiple processing lights ELk is changed so that the multiple processing lights ELk scan the surface of the coating film SF along the Y-axis direction. By the swing or rotation of the Y-scanning mirror 113Y, the multiple target irradiation areas EA move along the Y-axis direction on the coating film SF. The Y-scanning mirror 113Y changes the relative positional relationship between the multiple target irradiation areas EA and the coating film SF along the Y-axis direction. The X-scanning mirror 113X reflects the multiple processing lights ELk reflected by the Y-scanning mirror 113Y toward the fθ lens 114. The X-scanning mirror 113X can swing or rotate in the θY direction (i.e., the rotation direction around the Y axis). By swinging or rotating the X-scanning mirror 113X, the multiple processing lights ELk scan the surface of the coating film SF along the X-axis direction. By swinging or rotating the X-scanning mirror 113X, the multiple processing lights ELk sweep the surface of the coating film SF along the X-axis direction. By swinging or rotating the X-scanning mirror 113X, the traveling direction of the multiple processing lights ELk is changed so that the multiple processing lights ELk scan the surface of the coating film SF along the X-axis direction.By swinging or rotating the X-scanning mirror 113X, the multiple target irradiation areas EA move along the X-axis direction on the coating film SF. The X-scanning mirror 113X changes the relative positional relationship along the X-axis direction between the multiple target irradiation areas EA and the coating film SF. Note that the galvanometer mirror 113 may be called a displacement member because it is possible to move (i.e., displace) the target irradiation areas EA on the surface of the coating film SF.

[0038] The fθ lens 114 is disposed on the optical path of the multiple processing lights ELk from the galvanometer mirror 113. The fθ lens 114 is an optical element for converging the multiple processing lights ELk from the galvanometer mirror 113 onto the coating film SF. The fθ lens 114 is a terminal optical element located on the light emission side of the light irradiation device 11 (in other words, the closest to the coating film SF or located at the end of the optical path of the multiple processing lights ELk) among the optical elements included in the light irradiation device 11. The fθ lens 114 may be configured to be detachable from the light irradiation device 11. As a result, after removing the old fθ lens 114 from the light irradiation device 11, it is possible to attach another fθ lens 114 to the light irradiation device 11. However, the light irradiation device 11 may be provided with an optical element (e.g., a cover lens, etc.) provided on the light emission side of the fθ lens 114. An optical element (eg, a cover lens or the like) provided on the light exit side of the fθ lens 114 may be configured to be detachable from the light irradiation device 11.

[0039] 1 again, the drive system 12 moves the light irradiation device 11 relative to the coating film SF (i.e., relative to the workpiece S on whose surface the coating film SF is formed) under the control of the control device 2. That is, the drive system 12 moves the light irradiation device 11 relative to the coating film SF so as to change the relative positional relationship between the light irradiation device 11 and the coating film SF. When the relative positional relationship between the light irradiation device 11 and the coating film SF is changed, the relative positional relationship between the multiple target irradiation areas EA onto which the multiple processing lights ELk are respectively irradiated and the coating film SF is also changed. For this reason, it can be said that the drive system 12 moves the light irradiation device 11 relative to the coating film SF so as to change the relative positional relationship between the multiple target irradiation areas EA and the coating film SF.

[0040] The driving system 12 may move the light irradiation device 11 along the surface of the coating film SF. In the example shown in FIG. 1, the surface of the coating film SF is a plane parallel to at least one of the X-axis and the Y-axis, so the driving system 12 may move the light irradiation device 11 along at least one of the X-axis and the Y-axis. As a result, the target irradiation area EA moves along at least one of the X-axis and the Y-axis on the coating film SF. The driving system 12 may move the light irradiation device 11 along the thickness direction of the coating film SF (i.e., the direction intersecting the surface of the coating film SF). In the example shown in FIG. 1, the thickness direction of the coating film SF is along the Z-axis, so the driving system 12 may move the light irradiation device 11 along the Z-axis direction. The driving system 12 may move the light irradiation device 11 along at least one of the θX direction, the θY direction, and the θZ direction (i.e., the rotation direction around the Z-axis) in addition to at least one of the X-axis, the Y-axis, and the Z-axis.

[0041] The drive system 12 supports the light irradiation device 11 and moves the supported light irradiation device 11. In this case, the drive system 12 may include, for example, a first support member that supports the light irradiation device 11 and a first moving mechanism that moves the first support member.

[0042] The accommodation device 13 includes a ceiling member 131 and a partition member 132. The ceiling member 131 is disposed on the +Z side of the light irradiation device 11. The ceiling member 131 is a plate-shaped member along the XY plane. The ceiling member 131 supports the drive system 12 via a support member 133. The partition member 132 is disposed on the outer edge (or in the vicinity thereof) of the -Z side surface of the ceiling member 131. The partition member 132 is a tubular (for example, cylindrical or rectangular tubular) member extending from the ceiling member 131 toward the -Z side. The space surrounded by the ceiling member 131 and the partition member 132 becomes an accommodation space SP for accommodating the light irradiation device 11 and the drive system 12. Therefore, the above-mentioned drive system 12 moves the light irradiation device 11 within the accommodation space SP. Furthermore, the accommodation space SP includes a space between the light irradiation device 11 and the coating film SF (particularly, a space including the optical path of the processing light ELk). More specifically, the accommodation space SP includes the space between the final optical element (for example, the fθ lens 1123) included in the light irradiation device 11 and the coating film SF (particularly, the space including the optical path of the processing light ELk).

[0043] Each of the ceiling member 131 and the partition member 132 is a member capable of blocking the processing light ELk. That is, each of the ceiling member 131 and the partition member 132 is opaque to the wavelength of the processing light ELk. As a result, the processing light ELk propagating in the storage space SP does not leak out to the outside of the storage space SP (that is, the outside of the storage device 13). Note that each of the ceiling member 131 and the partition member 132 may be a member capable of attenuating the processing light ELk. That is, each of the ceiling member 131 and the partition member 132 may be semi-transparent to the wavelength of the processing light ELk. Furthermore, each of the ceiling member 131 and the partition member 132 is a member that does not transmit (that is, can block) unnecessary substances generated by irradiation of the processing light ELk. An example of the unnecessary substances is at least one of the steam and fumes of the coating film SF. As a result, the unnecessary substances generated in the storage space SP do not leak out to the outside of the storage space SP (that is, the outside of the storage device 13).

[0044] An end 134 of the partition member 132 (specifically, an end on the coating film SF side, in the example shown in FIG. 1, an end on the -Z side) can come into contact with the surface of the coating film SF. When the end 134 comes into contact with the coating film SF, the accommodation device 13 (i.e., the ceiling member 131 and the partition member 132) cooperates with the coating film SF to maintain the airtightness of the accommodation space SP. When the end 134 comes into contact with the coating film SF, it is possible to change its shape (particularly, the shape of the contact surface of the end 134 that comes into contact with the coating film SF (in the example shown in FIG. 1, the surface on the -Z side), the same below) according to the shape of the surface of the coating film SF. For example, when the end 134 comes into contact with the coating film SF whose surface is flat, the shape of the end 134 becomes flat like the coating film SF. For example, when the end 134 comes into contact with the coating film SF whose surface is curved, the shape of the end 134 becomes curved like the coating film SF. As a result, the sealing performance of the accommodation space SP is improved compared to a case where the end 134 cannot change its shape according to the surface shape of the coating film SF. An example of the shape-changeable end 134 is an end 134 formed from an elastic material such as rubber (in other words, a flexible material). Note that, for example, a bellows-shaped end 134a having an elastic structure may be used as the shape-changeable end 134.

[0045] The end 134 may be capable of adhering to the coating film SF while in contact with the coating film SF. For example, the end 134 may be provided with an adsorption mechanism capable of adsorbing to the coating film SF. When the end 134 adheres to the coating film SF, the airtightness of the storage space SP is further improved compared to when the end 134 is not attached to the coating film SF. However, the end 134 does not have to be capable of adhering to the coating film SF. Even in this case, as long as the end 134 contacts the coating film SF, the airtightness of the storage space SP is still appropriately maintained.

[0046] The partition member 132 is a member that can expand and contract along the Z-axis direction by a driving system (for example, an actuator) (not shown) that operates under the control of the control device 2. For example, the partition member 132 may be a bellows-shaped member (so-called bellows). In this case, the partition member 132 can expand and contract by the expansion and contraction of the bellows portion. Alternatively, for example, the partition member 132 may include a telescopic pipe in which a plurality of hollow cylindrical members having different diameters are combined. In this case, the partition member 132 can expand and contract by the relative movement of the plurality of cylindrical members. The state of the partition member 132 can be set to at least a first extended state in which the partition member 132 extends along the Z-axis direction to have a relatively long length, and a first contracted state in which the partition member 132 contracts along the Z-axis direction to have a relatively short length.

[0047] When the partition member 132 is in the first extended state, the end 134 is in a first contact state in which it can come into contact with the coating film SF. On the other hand, when the partition member 132 is in the first contracted state, the end 134 is in a first non-contact state in which it does not come into contact with the coating film SF. In other words, when the partition member 132 is in the first contracted state, the end 134 is in a first non-contact state in which it is separated from the coating film SF on the +Z side. Note that the configuration for switching the state of the end 134 between the first contact state and the first non-contact state is not limited to the configuration for expanding and contracting the partition member 132. For example, the state of the end 134 may be switched between the first contact state and the first non-contact state by configuring the storage device 13 itself to be movable along the ±Z direction.

[0048] The accommodation device 13 further includes a detection device 135. The detection device 135 detects unnecessary substances in the accommodation space SP (i.e., substances generated by irradiation with the processing light ELk). As will be described in detail later, the detection result of the detection device 135 is referred to by the control device 2 when changing the state of the partition member 132 from the first extended state to the first contracted state.

[0049] The support device 14 supports the storage device 13. Since the storage device 13 supports the drive system 12 and the light irradiation device 11, the support device 14 essentially supports the drive system 12 and the light irradiation device 11 via the storage device 13. In order to support the storage device 13, the support device 14 includes a beam member 141 and a plurality of leg members 142. The beam member 141 is disposed on the +Z side of the storage device 13. The beam member 141 is a beam-shaped member extending along the XY plane. The beam member 141 supports the storage device 13 via a support member 143. A plurality of leg members 142 are disposed on the beam member 141. The leg member 142 is a rod-shaped member extending from the beam member 141 toward the -Z side.

[0050] An end 144 of the leg member 142 (specifically, an end on the coating film SF side, in the example shown in FIG. 1, an end on the -Z side) can come into contact with the surface of the coating film SF. As a result, the support device 14 is supported by the coating film SF (i.e., by the workpiece S). That is, the support device 14 supports the storage device 13 with the end 144 in contact with the coating film SF (in other words, with the support device 14 supported by the coating film S). When the end 144 comes into contact with the coating film SF, similar to the end 134 of the storage device 13, the shape of the end 144 (particularly, the shape of the contact surface of the end 144 that comes into contact with the coating film SF (in the example shown in FIG. 1, the surface on the -Z side), the same applies below) may be changed according to the shape of the surface of the coating film SF. The end 144 may be attached to the coating film SF in a state of contact with the coating film SF. For example, the end 144 may be provided with an adsorption mechanism capable of adsorbing to the coating film SF. When the end 144 is attached to the coating film SF, the stability of the support device 14 is improved compared to a case in which the end 144 is not attached to the coating film SF. However, the end 144 does not have to be able to be attached to the coating film SF.

[0051] The beam member 141 is a member that can be extended and retracted along at least one of the X-axis and Y-axis (or along any direction along the XY plane) by the drive system 15 that operates under the control of the control device 2. For example, the beam member 141 may include a telescopic pipe in which multiple tubular members having different diameters are combined. In this case, the beam member 141 can be extended and retracted by the relative movement of the multiple tubular members.

[0052] The leg member 142 is a member that can be extended and retracted along the Z-axis direction by the drive system 15 that operates under the control of the control device 2. For example, the leg member 142 may include a telescopic pipe in which a plurality of tubular members having different diameters are combined. In this case, the leg member 142 can be extended and retracted by the relative movement of the plurality of tubular members. The state of the leg member 142 can be set to at least a second extended state in which the leg member 142 extends along the Z-axis direction and thus has a relatively long length, and a second contracted state in which the leg member 142 contracts along the Z-axis direction and thus has a relatively short length. When the leg member 142 is in the second extended state, the end portion 144 is in a second contact state in which it can come into contact with the coating film SF. On the other hand, when the leg member 142 is in the second contracted state, the end portion 144 is in a second non-contact state in which it does not come into contact with the coating film SF. In other words, when the leg member 142 is in the second contracted state, the end portion 144 is in a second non-contact state in which it is separated from the coating film SF on the +Z side.

[0053] The driving system 15 moves the supporting device 14 relative to the coating film SF (i.e., relative to the workpiece S on whose surface the coating film SF is formed) under the control of the control device 2. That is, the driving system 15 moves the supporting device 14 relative to the coating film SF so as to change the relative positional relationship between the supporting device 14 and the coating film SF. Since the supporting device 14 supports the storage device 13, the driving system 15 essentially moves the supporting device 14 to move the storage device 13 relative to the coating film SF. That is, the driving system 15 essentially moves the supporting device 14 relative to the coating film SF so as to change the relative positional relationship between the storage device 13 and the coating film SF. Furthermore, the storage device 13 supports the light irradiation device 11 via the driving system 12. Therefore, the driving system 15 essentially moves the supporting device 14 to move the light irradiation device 11 relative to the coating film SF. That is, the drive system 15 can move the support device 14 with respect to the coating film SF so as to change the relative positional relationship between the light irradiation device 11 and the coating film SF. In other words, the drive system 15 can move the support device 14 with respect to the coating film SF so as to change the relative positional relationship between the multiple target irradiation areas EA and the coating film SF.

[0054] The driving system 15 expands and contracts the beam members 141 under the control of the control device 2 in order to move the support device 14. Furthermore, the driving system 15 expands and contracts the multiple leg members 142 under the control of the control device 2 in order to move the support device 14. The manner in which the support device 14 is moved by the driving system 15 will be described in detail later with reference to Figs. 8 to 17.

[0055] The exhaust device 16 is connected to the accommodation space SP via an exhaust pipe 161. The exhaust device 16 can exhaust the gas in the accommodation space SP. In particular, the exhaust device 16 can suck the unnecessary substances generated by the irradiation of the processing light ELk from the accommodation space SP to the outside of the accommodation space SP by exhausting the gas in the accommodation space SP. In particular, if the unnecessary substances exist on the optical path of the processing light ELk, the irradiation of the processing light ELk to the coating film SF may be affected. For this reason, the exhaust device 16 particularly sucks the unnecessary substances together with the gas in the space from the space including the optical path of the processing light ELk between the terminal optical element of the light irradiation device 11 and the coating film SF. The unnecessary substances sucked from the accommodation space SP by the exhaust device 16 are discharged to the outside of the processing system SYS via the filter 162. The filter 162 adsorbs the unnecessary substances. In addition, the filter 162 may be detachable or replaceable.

[0056] The gas supply device 17 is connected to the accommodation space SP via an intake pipe 171. The gas supply device 17 can supply gas to the accommodation space SP. The gas to be supplied to the accommodation space SP can be at least one of the atmosphere, CDA (clean dry air), and an inert gas. An example of the inert gas is nitrogen gas. In the first embodiment, the gas supply device 17 supplies CDA. Therefore, the accommodation space SP becomes a space purged by CDA. At least a part of the CDA supplied to the accommodation space SP is sucked in by the exhaust device 16. The CDA sucked in by the exhaust device 16 from the accommodation space SP passes through a filter 162 and is discharged to the outside of the processing system SYSa.

[0057] The gas supply device 17 particularly supplies a gas such as CDA to the optical surface 1141 on the side of the storage space SP of the fθ lens 114 shown in FIG. 3 (that is, the optical surface on the side of the storage space SP of the terminal optical element of the light irradiation device 11). Since the optical surface 1141 faces the storage space SP, it may be exposed to unnecessary substances generated by irradiation of the processing light ELk. As a result, the unnecessary substances may adhere to the optical surface 1141. Furthermore, since the processing light ELk passes through the optical surface 1141, the unnecessary substances adhered to the optical surface 1141 may be burned (that is, fixed) by the processing light ELk passing through the optical surface 1141. The unnecessary substances attached (and further fixed) to the optical surface 1141 may become stains on the optical surface 1141 and may affect the characteristics of the processing light ELk. However, when a gas such as CDA is supplied to the optical surface 1141, contact between the optical surface 1141 and the unnecessary substances is prevented. This prevents dirt from adhering to the optical surface 1141. Therefore, the gas supply device 17 also functions as an adhesion prevention device that prevents dirt from adhering to the optical surface 1141. Furthermore, even if dirt has adhered (or even become stuck) to the optical surface 1141, the dirt may be removed (e.g., blown away) by the CDA supplied to the optical surface 1141. Therefore, the gas supply device 17 may also function as an adhesion prevention device that removes dirt adhering to the optical surface 1141.

[0058] The control device 2 controls the overall operation of the processing system SYSa. In particular, the control device 2 controls the light irradiation device 11, the drive system 12, the accommodation device 13, and the drive system 15 so that a recess C having a desired shape is formed at a desired position, as will be described later in detail.

[0059] The control device 2 may include, for example, a central processing unit (CPU) (or a graphics processing unit (GPU) in addition to or instead of the CPU) and a memory. The control device 2 functions as a device that controls the operation of the machining system SYSa by the CPU executing a computer program. This computer program is a computer program for making the control device 2 (e.g., the CPU) perform (i.e., execute) the operation to be performed by the control device 2, which will be described later. In other words, this computer program is a computer program for making the control device 2 function so as to make the machining system SYSa perform the operation to be described later. The computer program executed by the CPU may be recorded in a memory (i.e., a recording medium) provided in the control device 2, or may be recorded in any storage medium (e.g., a hard disk or a semiconductor memory) built into the control device 2 or externally attachable to the control device 2. Alternatively, the CPU may download the computer program to be executed from a device external to the control device 2 via a network interface.

[0060] The control device 2 may not be provided inside the processing system SYSa, and may be provided as a server or the like outside the processing system SYSa. In this case, the control device 2 and the processing system SYSa may be connected by a wired and / or wireless network (or a data bus and / or a communication line). As the wired network, a network using a serial bus type interface, such as at least one of IEEE1394, RS-232x, RS-422, RS-423, RS-485, and USB, may be used. As the wired network, a network using a parallel bus type interface may be used. As the wired network, a network using an interface conforming to Ethernet (registered trademark), such as at least one of 10BASE-T, 100BASE-TX, and 1000BASE-T, may be used. As the wireless network, a network using radio waves may be used. As an example of a network using radio waves, a network conforming to IEEE802.1x (for example, at least one of wireless LAN and Bluetooth (registered trademark)) may be mentioned. As the wireless network, a network using infrared rays may be used. A network using optical communication may be used as the wireless network. In this case, the control device 2 and the processing system SYSa may be configured to be able to transmit and receive various information via the network. The control device 2 may be able to transmit information such as commands and control parameters to the processing system SYSa via the network. The processing system SYSa may include a receiving device that receives information such as commands and control parameters from the control device 2 via the network. Alternatively, a first control device that performs a part of the processing performed by the control device 2 may be provided inside the processing system SYSa, while a second control device that performs another part of the processing performed by the control device 2 may be provided outside the processing system SYSa.

[0061] As a recording medium for recording the computer program executed by the CPU, at least one of CD-ROM, CD-R, CD-RW, flexible disk, MO, DVD-ROM, DVD-RAM, DVD-R, DVD+R, DVD-RW, DVD+RW, Blu-ray (registered trademark), and other optical disks, magnetic media such as magnetic tape, magneto-optical disk, semiconductor memory such as USB memory, and any other medium capable of storing a program may be used. The recording medium may include a device capable of recording a computer program (for example, a general-purpose device or a dedicated device in which a computer program is implemented in a state in which it can be executed in at least one of the forms of software and firmware). Furthermore, each process or function included in the computer program may be realized by a logical processing block realized in the control device 2 by the control device 2 (i.e., a computer) executing the computer program, or may be realized by hardware such as a predetermined gate array (FPGA, ASIC) provided in the control device 2, or may be realized in a form in which a logical processing block and a partial hardware module that realizes some elements of the hardware are mixed.

[0062] (1-2) Specific examples of machining operations using the machining system SYSa (1-2-1) Examples of structures formed by machining operations As described with reference to FIG. 2, in the first embodiment, the processing system SYSa forms a recess C in the coating film SF. The recess C is formed in a portion of the coating film SF that is actually irradiated with the processing light ELk. Therefore, by appropriately setting the position on the coating film SF where the processing light ELk is actually irradiated (i.e., the position where the target irradiation area EA where the processing light ELk is scheduled to be irradiated is set), the recess C can be formed at a desired position on the coating film SF. In other words, a structure made of the coating film SF can be formed on the workpiece S.

[0063] Specifically, as described above, the processing system SYSa uses at least one of the galvanometer mirror 113 and the drive system 12 to move the surface of the coating film SF to the target irradiation area EA. During the period in which the target irradiation area EA moves on the surface of the coating film SF, the processing system SYSa irradiates the processing light ELk at a timing when the target irradiation area EA overlaps with an area on the surface of the coating film SF that should actually be irradiated with the processing light ELk (i.e., an area to be processed). On the other hand, during the period in which the target irradiation area EA moves on the surface of the coating film SF, the processing system SYSa does not irradiate the processing light ELk at a timing when the target irradiation area EA does not overlap with an area on the surface of the coating film SF that should actually be irradiated with the processing light ELk. In other words, during the period in which the target irradiation area EA moves on the surface of the coating film SF, the processing system SYSa does not irradiate the processing light ELk at a timing when the target irradiation area EA overlaps with an area on the surface of the coating film SF that should not actually be irradiated with the processing light ELk (i.e., an area not to be processed). As a result, a structure is formed on the workpiece S by the coating film SF that corresponds to the pattern of the area of ​​the coating film SF that is actually irradiated with the processing light ELk.

[0064] In the first embodiment, the processing system SYSa forms a riblet structure, which is an example of a structure formed by such a coating film SF, on the workpiece S under the control of the control device 2. The riblet structure is a structure that can reduce the resistance of the surface of the coating film SF to a fluid (particularly, frictional resistance and turbulent frictional resistance). The resistance of the surface of the workpiece S on which the riblet structure is formed to a fluid is smaller than the resistance of the surface of the workpiece S on which the riblet structure is not formed to a fluid. For this reason, it can also be said that the riblet structure is a structure that can reduce the resistance of the surface of the workpiece S to a fluid. Note that the fluid referred to here may be any medium (gas, liquid) that flows relative to the surface of the coating film SF. For example, a medium flowing relative to the stationary workpiece SF and a stationary medium distributed around the moving workpiece SF are each an example of a fluid.

[0065] An example of the riblet structure is shown in Figures 6(a) and 6(b). As shown in Figures 6(a) and 6(b), the riblet structure is a structure in which a plurality of concave structures CP1 (i.e., concave structures CP1 formed linearly so as to extend along the first direction) formed by continuously forming recesses C along a first direction (Y-axis direction in the example shown in Figures 6(a) and 6(b)) are arranged along a second direction (X-axis direction in the example shown in Figures 6(a) and 6(b)) intersecting the first direction. In other words, the riblet structure is a structure in which a plurality of concave structures CP1 extending along the first direction have a periodic direction in the second direction intersecting the first direction. Between two adjacent concave structures CP1, a convex structure CP2 protruding from the surroundings is substantially present. Therefore, the riblet structure can also be said to be a structure in which, for example, a plurality of convex structures CP2 extending linearly along a first direction (for example, the Y-axis direction) are arranged along a second direction (for example, the X-axis direction) intersecting the first direction. In other words, the riblet structure can also be said to be a structure in which, for example, a plurality of convex structures CP2 extending along a first direction have a periodic direction in a second direction intersecting the first direction. The riblet structures shown in Figures 6(a) and 6(b) are periodic structures.

[0066] The interval between two adjacent concave structures CP1 (i.e., the arrangement pitch P1 of the concave structures CP1) is, for example, several microns to several hundreds of microns, but may be other sizes. Furthermore, the depth D of each concave structure CP1 (i.e., the depth in the Z-axis direction) is, for example, several microns to several hundreds of microns, but may be other sizes. The depth D of each concave structure CP1 may be equal to or smaller than the arrangement pitch P1 of the concave structures CP1. The depth D of each concave structure CP1 may be equal to or smaller than half the arrangement pitch P1 of the concave structures CP1. The shape of a cross section including the Z axis of each concave structure CP1 (specifically, a cross section along the XZ plane) is a bowl-shaped curved shape, but may be a triangle, a rectangle, or a polygon with pentagons or more.

[0067] The interval between two adjacent convex structures CP2 (i.e., the arrangement pitch P2 of the convex structures CP2) is, for example, several microns to several hundreds of microns, but may be other sizes. Furthermore, the height H of each convex structure CP2 (i.e., the height in the Z-axis direction) is, for example, several microns to several hundreds of microns, but may be other sizes. The height H of each convex structure CP2 may be equal to or less than the arrangement pitch P2 of the convex structures CP2. The height H of each convex structure CP2 may be equal to or less than half the arrangement pitch P2 of the convex structures CP2. The shape of a cross section including the Z axis of each convex structure CP2 (specifically, a cross section along the XZ plane) is a mountain shape with a curved slope, but may be a triangle, a rectangle, or a polygon with pentagons or more. Furthermore, each convex structure CP2 may have a ridge line.

[0068] Furthermore, the riblet structure formed by the processing system SYSa may itself be an existing riblet structure, such as that described in Chapter 5 of the "Mechanical Engineering Handbook: Basics, α4 Fluid Engineering" edited by the Japan Society of Mechanical Engineers, and therefore a detailed explanation of the riblet structure itself will be omitted.

[0069] As described above, such a riblet structure can reduce the resistance to a fluid on the surface of the workpiece S on which the riblet structure is formed. For this reason, the workpiece S may be an object (e.g., a structure) for which it is desired to reduce the resistance to a fluid. For example, the workpiece S may include an object (i.e., a moving object) that can move so that at least a part of it moves through a fluid (e.g., at least one of a gas and a liquid). Specifically, for example, the workpiece S may include the body of an aircraft PL (e.g., at least one of a fuselage PL1, a main wing PL2, a vertical tail PL3, and a horizontal tail PL4) as shown in Figs. 7(a) to 7(c). In this case, as shown in Figs. 7(a) and 7(c), the processing device 1 (or the processing system SYSa, the same applies hereinafter in this paragraph) may be self-supported on the body of the aircraft PL by a support device 14. Alternatively, since the end 144 of the leg member 142 of the support device 14 can be attached to the paint film SF, the processing device 1 may be attached to the body of the aircraft PL so as to be suspended (i.e., hanging) from the body of the aircraft PL by the support device 14, as shown in FIG. 7(b). Furthermore, since the end 144 of the leg member 142 of the support device 14 can be attached to the paint film SF and the end 134 of the partition member 132 of the storage device 13 can be attached to the paint film SF, the processing device 1 can stand on its own on the paint film SF even if the surface of the paint film SF is facing upward and inclined with respect to the horizontal plane. Furthermore, the processing device 1 can be attached to the paint film SF so as to be suspended from the paint film SF even if the surface of the paint film SF is facing downward and inclined with respect to the horizontal plane. In either case, the light irradiation device 11 can be moved along the surface of the aircraft by the drive system 12 and / or by the movement of the support device 14. Therefore, the processing system SYS is capable of forming a riblet structure using a paint film SF even on a workpiece S such as an aircraft fuselage (i.e., a workpiece S having a curved surface, a surface that is inclined relative to the horizontal plane, or a surface that faces downward).

[0070] In addition, for example, the processing object S may include at least one of the body of an automobile and an aerodynamic part. For example, the processing object S may include the hull of a ship. For example, the processing object S may include the body of a rocket. For example, the processing object S may include a turbine (for example, at least one of a water turbine and a wind turbine, etc., particularly a turbine blade). For example, the processing object S may include a part constituting an object that is movable so that at least a part of it moves through a fluid. For example, the processing object S may include an object at least a part of which is fixed in a flowing fluid. Specifically, for example, the processing object S may include a bridge girder installed in a river or the sea. For example, the processing object S may include a pipe through which a fluid flows. In this case, the inner wall of the pipe can be the surface of the processing object S described above.

[0071] Incidentally, one example of the workpiece S given here is a relatively large object (e.g., an object having a size on the order of several meters to several hundred meters). In this case, as shown in Figs. 7(a) to 7(c), the size of the light irradiation device 11 is smaller than the size of the workpiece S. However, the workpiece S may be an object of any size. For example, the workpiece S may be an object having a size on the order of kilometers, centimeters, millimeters, or micrometers.

[0072] The characteristics of the riblet structure described above may be set to appropriate characteristics so that the friction reduction effect can be appropriately obtained depending on the type of object S to be processed. In other words, the characteristics of the riblet structure described above may be optimized so that the friction reduction effect can be appropriately obtained depending on the type of object S to be processed. More specifically, the characteristics of the riblet structure may be set to appropriate characteristics so that the friction reduction effect can be appropriately obtained depending on at least one of the type of fluid distributed around the object S to be processed during use (i.e., during operation), the relative speed of the object S to the fluid, and the shape of the object S to be processed. Furthermore, the characteristics of the riblet structure described above may be set to appropriate characteristics so that the friction reduction effect can be appropriately obtained depending on the type of object S to be processed and on which part of the object the riblet structure is formed. For example, when the object S to be processed is the body of an aircraft PL, the characteristics of the riblet structure formed on the fuselage PL1 and the characteristics of the riblet structure formed on the main wing PL2 may be different.

[0073] The characteristics of the riblet structure may include the size of the riblet structure. The size of the riblet structure may include at least one of the arrangement pitch P1 of the concave structures CP1, the depth D of each concave structure CP1, the arrangement pitch P2 of the convex structures CP2, the height H of each convex structure CP2, etc. The characteristics of the riblet structure may include the shape of the riblet structure (for example, the shape of a cross section including the Z axis (specifically, a cross section along the XZ plane)). The characteristics of the riblet structure may include the extension direction of the riblet structure (i.e., the extension direction of the concave structures CP1). The characteristics of the riblet structure may include the formation position of the riblet structure.

[0074] The characteristics of the riblet structure may be determined based on a simulation model that simulates the workpiece S. In particular, the characteristics of the riblet structure may be determined based on a simulation model that simulates the workpiece S moving in a fluid (in other words, simulating the flow of the fluid around the moving workpiece S). Specifically, the control device 2 (or another computing device that performs calculations based on the simulation model) may determine the characteristics of the riblet structure that appropriately obtains the friction reduction effect based on the fluid simulation model. In other words, the control device 2 (or another computing device that performs calculations based on the simulation model) may optimize the characteristics of the riblet structure so that the friction reduction effect is appropriately obtained based on the fluid simulation model. Thereafter, the control device 2 may control the processing device 1 to form a riblet structure having the determined characteristics based on riblet information related to the determined (i.e., optimized) characteristics of the riblet structure. The riblet information may include, for example, information indicating what size, shape, and extension direction of the concave structure CP1 should be formed at what position of the workpiece S. The riblet information may include, for example, information indicating what size, shape, and extension direction of the concave structure CP1 to be formed at what position on the workpiece S, in association with a simulation model.

[0075] In addition, not limited to the processing system SYSa equipped with the multi-beam optical system 112, in any processing system that processes the workpiece S to form a riblet structure, the characteristics of the riblet structure may be determined based on a simulation model that simulates the workpiece S. In other words, in any processing system that processes the workpiece S to form a riblet structure, the characteristics of the riblet structure may be optimized based on a fluid simulation model so that an appropriate friction reduction effect is obtained, and a riblet structure having optimized characteristics may be formed based on riblet information related to the characteristics of the optimized riblet structure.

[0076] (1-2-2) Processing flow Next, the flow of processing operations for forming the riblet structure will be described with reference to FIGS.

[0077] First, as described above, the multiple processing beams ELk are deflected by the galvanometer mirror 113. In order to form a riblet structure, the galvanometer mirror 113 deflects the multiple processing beams ELk so as to alternately repeat a scanning operation in which the multiple target irradiation areas EA are moved along the Y-axis direction on the surface of the coating film SF and each of the multiple processing beams ELk is irradiated onto the corresponding target irradiation areas EA at a desired timing, and a stepping operation in which the multiple target irradiation areas EA are moved at least a predetermined amount along the X-axis direction on the surface of the coating film SF. In this case, the Y-axis may be referred to as the scan axis, and the X-axis may be referred to as the step axis.

[0078] Here, there is a limit to the size of the area on the surface of the coating film SF where the multiple processing lights ELk can be scanned by controlling the galvanometer mirror 113 while the light irradiation device 11 is stationary relative to the coating film SF. Therefore, in the first embodiment, as shown in FIG. 8, the control device 2 may set multiple processing shot areas SA on the surface of the coating film SF (particularly, the area of ​​the coating film SF where the riblet structure is to be formed). Each processing shot area SA corresponds to an area on the coating film SF where the multiple processing lights ELk can be scanned by controlling the galvanometer mirror 113 while the light irradiation device 11 is stationary relative to the coating film SF. The shape of each processing shot area SA is a rectangle, but the shape is arbitrary.

[0079] The control device 2 controls the light irradiation device 11 to irradiate the multiple processing lights ELk deflected by the galvanometer mirror 113 to at least a part of one processing shot area SA (for example, SA1), thereby forming a riblet structure in the one processing shot area SA (SA1). After that, the control device 2 controls at least one of the drive systems 12 and 15 to move the light irradiation device 11 relative to the coating film SF, thereby disposing the light irradiation device 11 at a position where the multiple processing lights ELk can be irradiated to another processing shot area SA (for example, SA2). After that, the control device 2 controls the light irradiation device 11 to irradiate the multiple processing lights ELk deflected by the galvanometer mirror 113 to at least a part of the other processing shot area SA (SA2), thereby forming a riblet structure in the other processing shot area SA. The control device 2 repeats the following operations for all processing shot areas SA1 to SA16, thereby forming a riblet structure.

[0080] When forming a riblet structure in each processed shot area SA, the control device 2 obtains information corresponding to the characteristics of the riblet structure to be formed in each processed shot area SA from the riblet information regarding the characteristics of the riblet structure optimized based on the above-mentioned simulation model, and forms a riblet structure having characteristics optimized for each processed shot area SA in each processed shot area SA based on the obtained information.

[0081] The following description will be continued using an example of the operation of forming a riblet structure in the processing shot areas SA1 to SA4 shown in FIG. 8. The following description will be given using an example in which two processing shot areas SA adjacent along the X-axis direction are located in the accommodation space SP. However, the same operation is performed even when any number of processing shot areas SA are located in the accommodation space SP. Furthermore, the operation of forming a riblet structure shown below is merely an example, and the processing system SYS may form a riblet structure by performing an operation different from the operation shown below. In short, the processing system SYS may perform any operation as long as it can irradiate a plurality of processing lights ELk onto the processing object S to form a riblet structure on the processing object S.

[0082] As shown in FIG. 9, first, the control device 2 controls the drive system 15 to move the support device 14 relative to the coating film SF so that the storage device 13 is disposed at the first storage position where the processing shot areas SA1 and SA2 are located in the storage space SP. That is, the control device 2 moves the storage device 13 supported by the support device 14 so that the processing shot areas SA1 and SA2 are covered by the storage device 13. Furthermore, the control device 2 controls the drive system 12 to move the light irradiation device 11 relative to the coating film SF so that the light irradiation device 11 is disposed at the first irradiation position where the processing shot area SA1 can be irradiated with a plurality of processing lights ELk. After the storage device 13 is disposed at the first storage position and the light irradiation device 11 is disposed at the first irradiation position, the partition member 132 is in the first extension state. Therefore, the end 134 of the partition member 132 contacts and adheres to the coating film SF. Similarly, the plurality of leg members 142 are in the second extension state. Therefore, the ends 144 of the multiple leg members 142 contact and adhere to the paint film SF.

[0083] Thereafter, as shown in FIG. 10(a) and FIG. 10(b), the control device 2 controls the light irradiation device 11 (particularly, the galvanometer mirror 113) so that the processing shot area SA1 is scanned with the multiple processing lights ELk. Specifically, in order to perform the above-mentioned scanning operation, the control device 2 controls the Y-scanning mirror 113Y of the galvanometer mirror 113 so that the multiple processing lights ELk scan a certain area in the processing shot area SA1 along the Y-axis direction. During the scanning operation, the light source 110 emits the source light ELo. As a result, during the scanning operation, the multi-beam optical system 112 emits the multiple processing lights ELk. Thereafter, in order to perform the above-mentioned stepping operation, the control device 2 rotates the X-scanning mirror 113X of the galvanometer mirror 113 by a unit step amount. During the stepping operation, the light source 110 does not emit the source light ELo. As a result, during the stepping operation, the multi-beam optical system 112 does not emit the multiple processing lights ELk. Thereafter, in order to perform the above-mentioned scanning operation, the control device 2 controls the Y-scanning mirror 113Y of the galvanometer mirror 113 so that a certain area in the processing shot area SA1 is scanned with a plurality of processing lights ELk along the Y-axis direction. In this manner, the control device 2 controls the galvanometer mirror 113 so that the entire processing shot area SA1 (or a partial area of ​​the processing shot area SA1 where the riblet structure is to be formed) is scanned with a plurality of processing lights ELk by alternately repeating the scanning operation and the stepping operation. Note that while the stepping operation is being performed, the light source light ELo may be emitted from the light source 110 to emit a plurality of processing lights ELk.

[0084] In the first embodiment, as shown in FIG. 11, which is a plan view showing the scanning trajectory of the processing light ELk during the period in which the scanning operation and the stepping operation are repeated (i.e., the moving trajectory of the target irradiation area EA), the processing device 1 sequentially performs the scanning operation on the multiple scanning areas SCA set in the processing shot area SA. FIG. 11 shows an example in which six scanning areas SCA#1 to SCA#6 are set in the processing shot area SA. Each scanning area SCA is an area scanned by multiple processing light ELk irradiated in one scanning operation (i.e., a series of scanning operations without a stepping operation). Each scanning area SCA is an area in which multiple target irradiation areas EA move in one scanning operation. In this case, in one scanning operation, the target irradiation area EA moves from the scanning start position SC_start of each scanning area SCA toward the scanning end position SC_end. Such a scanning area SCA is typically an area extending along the Y-axis direction (i.e., the scanning direction of multiple processing light ELk). The multiple scan areas SCA are arranged along the X-axis direction (that is, the direction intersecting the scanning direction of the multiple processing lights ELk).

[0085] In this case, the processing system SYSa starts a scan operation from, for example, one of the multiple scan areas SCA set in a certain processing shot area SA, which is located on the most +X side or the most -X side. For example, FIG. 11 shows an example in which the processing system SYSa starts a scan operation from the shot area SCA#1 located on the most -X side. In this case, the control device 2 controls the galvanometer mirror 113 so that the processing light ELk can be irradiated to the scan start position SC_start#1 of the scan area SCA#1 (for example, the end of the -Y side in the scan area SCA#1 or its vicinity). That is, the control device 2 controls the galvanometer mirror 113 so that the target irradiation area EA is set to the scan start position SC_start#1 of the scan area SCA#1. After that, the processing system SYSa performs a scan operation on the scan area SCA#1. Specifically, the control device 2 controls the galvanometer mirror 113 so that the multiple target irradiation areas EA move from the scan start position SC_start#1 of the scan area SCA#1 to the scan end position SC_end#1 of the scan area SCA#1 (for example, the end on the +Y side in the scan area SCA#1 or its vicinity). Furthermore, the control device 2 controls the light irradiation device 11 so that each of the multiple processing lights ELk is irradiated to the corresponding target irradiation area EA at a desired timing. As a result, the scan area SCA#1 is scanned by the multiple processing lights ELk. Note that, in FIG. 11, for the sake of simplicity, the movement trajectory of one target irradiation area EA in each scan area SCA is shown, but in reality, multiple target irradiation areas EA move in each scan area SCA. That is, in FIG. 11, for the sake of simplicity, the scanning trajectory of one processing light ELk in each scan area SCA is shown, but in reality, each scan area SCA is scanned by multiple processing lights ELk.

[0086] After completing the scan operation for the scan area SCA#1, the processing system SYSa performs a step operation to perform a scan operation for another scan area SCA different from the scan area SCA#1. Specifically, the control device 2 controls the galvanometer mirror 113 so that the processing light ELk can be irradiated to the scan start position SC_start#2 (for example, the end of the -Y side in the scan area SCA#2 or its vicinity) of the scan area SCA#2 adjacent to the scan area SCA#1 along the X-axis direction. That is, the control device 2 controls the galvanometer mirror 113 so that the target irradiation area EA is set at the scan start position SC_start#2 of the scan area SCA#2. As a result, as shown in FIG. 11, the target irradiation position EA moves along each of the X-axis direction and the Y-axis direction. At this time, the movement amount of the target irradiation position EA in the X-axis direction may be the same as the size of the scan area SCA in the X-axis direction. The movement amount of the target irradiation position EA in the Y-axis direction may be the same as the size of the scan area SCA in the Y-axis direction.

[0087] Thereafter, the processing system SYSa performs a scan operation on the scan area SCA#2. Specifically, the control device 2 controls the galvanometer mirror 113 so that the multiple target irradiation areas EA move from the scan start position SC_start#2 of the scan area SCA#2 to the scan end position SC_end#2 of the scan area SCA#2 (for example, the end on the +Y side in the scan area SCA#2 or its vicinity). Furthermore, the control device 2 controls the light irradiation device 11 so that the multiple processing beams ELk are each irradiated to the corresponding target irradiation areas EA at a desired timing. As a result, the scan area SCA#2 is scanned by the multiple processing beams ELk.

[0088] Thereafter, the same operation is repeated until the scanning operation for the scan areas SCA#3 to SCA#6 is completed.

[0089] In the example shown in FIG. 11, the scanning direction of the processing light ELk by the scanning operation is fixed to the +Y axis direction. The moving direction of the target irradiation area EA by the scanning operation is fixed to the +Y axis direction. That is, in the example shown in FIG. 11, the scanning directions of the processing light ELk by the scanning operation performed multiple times in the processing shot area SA (that is, the moving direction of the target irradiation area EA, the same below) are the same as each other. The scanning directions of the multiple processing lights ELk that scan the multiple scan areas SCA respectively are the same as each other. The moving directions of the target irradiation area EA in the multiple scan areas SCA are the same as each other. Specifically, the scanning direction of the processing light ELk by the scanning operation performed on the scan area SCA#1, the scanning direction of the processing light ELk by the scanning operation performed on the scan area SCA#2, ..., the scanning direction of the processing light ELk by the scanning operation performed on the scan area SCA#6 are the same as each other. However, as will be described later in a modified example, the scanning direction of the processing light ELk by the scanning operation performed on one scan area SCA may be different from the scanning direction of the processing light ELk by the scanning operation performed on another scan area SCA. The scanning direction of the processing light ELk by the scanning operation performed on one scan area SCA may change during the scanning operation.

[0090] By repeating such scanning and stepping operations, a riblet structure is formed in the processing shot area SA1. As shown in Fig. 10(a) and Fig. 10(b), the width of the area scanned by the processing light ELk (i.e., the width of the processing shot area SA, particularly the width in the X-axis direction) is larger than the width of the light irradiation device 11 (particularly the width in the X-axis direction).

[0091] The control device 2 controls the drive system 15 so that the leg members 142 are maintained in the second extended state during the period when the light irradiation device 11 is irradiating the processing light ELk. As a result, the ends 144 of the leg members 142 continue to adhere to the coating film SF. As a result, the stability of the support device 14 is improved, and the possibility that the target irradiation area EA of the processing light ELk will be unintentionally shifted on the coating film SF due to instability of the support device 14 is reduced. However, as long as the support device 14 is capable of standing on the coating film SF (or is capable of being attached to the coating film SF so as to be suspended from the coating film SF) during at least a portion of the period when the light irradiation device 11 is irradiating the light EL, some of the leg members 142 may be in the second contracted state.

[0092] The control device 2 controls a drive system (not shown) that expands and contracts the partition member 132 so that the partition member 132 is maintained in the first extended state while the light irradiation device 11 is irradiating the processing light ELk. As a result, the end 134 of the partition member 132 continues to adhere to the coating film SF. As a result, the hermeticity of the storage space SP is maintained, so that the processing light ELk propagating within the storage space SP does not leak out to the outside of the storage space SP (i.e., outside the storage device 13). Furthermore, unnecessary substances generated within the storage space SP do not leak out to the outside of the storage space SP (i.e., outside the storage device 13).

[0093] Incidentally, there is a possibility that at least a part of the end 134 that should be attached to the coating film SF may become detached from the coating film SF due to some factor. In this case, if the light irradiation device 11 continues to irradiate the processing light ELk, at least one of the processing light ELk and the unnecessary material may leak out of the storage device 13. Therefore, when the control device 2 detects that at least a part of the end 134 has become detached from the coating film SF during the period when the light irradiation device 11 is irradiating the processing light ELk, the control device 2 may control the light irradiation device 11 to stop irradiating the processing light ELk.

[0094] 12, the control device 2 controls the drive system 12 so that the light irradiation device 11 moves from the first irradiation position to a second irradiation position where the light irradiation device 11 can irradiate the processing shot area SA2 with a plurality of processing light beams ELk. During the period in which the light irradiation device 11 is moving, the control device 2 controls the light irradiation device 11 so that the light irradiation device 11 does not irradiate the processing light ELk.

[0095] Thereafter, as shown in FIG. 13(a) and FIG. 13(b), the control device 2 controls the light irradiation device 11 (particularly, the galvanometer mirror 113) so that the multiple processing lights ELk scan the processing shot area SA2. Specifically, the control device 2 controls the light irradiation device 11 (particularly, the galvanometer mirror 113) so that the multiple processing lights ELk scan the entire processing shot area SA2 (or a part of the processing shot area SA2 where the riblet structure is to be formed) by alternately repeating the above-mentioned scanning operation and the above-mentioned step operation. As a result, the riblet structure is formed in the processing shot area SA2. Note that the multiple recesses CP1 constituting the riblet structure in the processing shot area SA1 may be formed so as to be continuously connected to each of the multiple recesses CP1 constituting the riblet structure in the processing shot area SA2 (or other processing shot areas SA) adjacent to the processing shot area SA1. Alternatively, the multiple recesses CP1 constituting the riblet structure in the processing shot area SA1 may be formed so as not to be connected to each of the multiple recesses CP1 constituting the riblet structure in the processing shot area SA2. For example, the continuous length of one recess CP1 formed as a result of scanning the processing light ELk in the processing shot area SA depends on the size of the processing shot area SA (particularly, the size in the Y-axis direction, which is the scanning direction of the processing light ELk). Therefore, when the size of the processing shot area SA is large enough to realize a continuous length that allows the riblet structure to perform the above-mentioned function, the multiple recesses CP1 constituting the riblet structure in the processing shot area SA1 may be formed so as not to be connected to each of the multiple recesses CP1 constituting the riblet structure in the processing shot area SA2. As an example, when the processing target S is an aircraft, the continuous length that allows the riblet structure to perform the above-mentioned function is approximately several mm according to a calculation based on the airspeed when the aircraft is in use (typically, during cruising) and the frequency of the turbulence phenomenon.Therefore, when a processed shot area SA whose size in the Y-axis direction is larger than approximately a few mm can be set on the surface of the coating film SF, the multiple recesses CP1 that constitute the riblet structure in the processed shot area SA1 may be formed so as not to be connected to each of the multiple recesses CP1 that constitute the riblet structure in the processed shot area SA2.

[0096] When the riblet structure is formed in the processing shot area SA2, there are no processing shot areas SA in which the riblet structure has not yet been formed remaining in the storage space SP. Therefore, by simply moving the light irradiation device 11 in the storage space SP using the drive system 12, the light irradiation device 11 cannot irradiate the processing shot areas SA in which the riblet structure has not yet been formed with a plurality of processing lights ELk to form the riblet structure. Therefore, when there are no processing shot areas SA in which the riblet structure has not yet been formed remaining in the storage space SP, the control device 2 controls the drive system 15 by moving the support device 14 (i.e., by moving the storage device 13) so that the processing shot areas SA in which the riblet structure has not yet been formed are newly positioned in the storage space SP.

[0097] 14, the control device 2 first controls a drive system (not shown) for expanding and contracting the partition member 132 so that the state of the partition member 132 switches from a first extended state to a first contracted state. As a result, the end 134 of the partition member 132 separates from the coating film SF. Note that while the support device 14 is moving, the control device 2 controls the light irradiation device 11 so that the light irradiation device 11 does not irradiate the processing light ELk. Therefore, even if the end 134 separates from the coating film SF, there is no possibility that at least one of the processing light ELk and the unnecessary material will leak out of the storage device 13.

[0098] However, although the unnecessary substances present in the storage space SP are sucked out of the storage space SP by the exhaust device 16 described above, there is a possibility that due to some factor, all of the unnecessary substances present in the storage space SP are not sucked out by the exhaust device 16 (i.e., the unnecessary substances remain in the storage space SP). In this case, when the end portion 134 is separated from the coating film SF, the unnecessary substances may leak out to the outside of the storage device 13. For this reason, the control device 2 may determine whether or not to switch the partition member 132 from the first extended state to the first contracted state based on the detection result of the detection device 135 that detects the unnecessary substances in the storage space SP. If the unnecessary substances remain in the storage space SP, the control device 2 may not switch the partition member 132 from the first extended state to the first contracted state. In this case, the unnecessary substances remaining in the storage space SP are continuously sucked in by the exhaust device 16. On the other hand, if the unnecessary substances do not remain in the storage space SP, the control device 2 may switch the partition member 132 from the first extended state to the first contracted state.

[0099] Furthermore, the control device 2 controls the drive system 15 so that at least some of the leg members 142 that move relative to the coating film SF in association with the movement of the support device 14 (particularly, as described later, the extension of the beam member 141 that had been contracted) among the multiple leg members 142 are switched from the second extended state to the second contracted state. The leg member 142 that moves relative to the coating film SF in association with the extension of the beam member 141 that had been contracted is typically the leg member 142 that is located on the front side of the movement direction of the support device 14 (i.e., the movement direction of the storage device 13) among the multiple leg members 142. In the example shown in FIG. 14, the support device 14 moves toward the +X side, and the leg member 142 located on the front side of the movement direction of the support device 14 is the leg member 142 located on the +X side. Hereinafter, the leg member 142 located on the front side of the movement direction of the support device 14 is referred to as the "front leg member 142". As a result, the end 144 of the front leg member 142 moves away from the coating film SF.

[0100] 15, the control device 2 controls the drive system 15 so that the accommodation device 13 moves from the first accommodation position to the second accommodation position where the processing shot areas SA3 and SA4 are located in the accommodation space SP. Specifically, the control device 2 controls the drive system 15 so that the beam member 141 extends along the movement direction of the support device 14. As a result, the beam member 141 extends while supporting the accommodation device 13 (and further while supporting the light irradiation device 11 supported by the accommodation device 13). Furthermore, in parallel with the movement of the support device 14, the control device 2 controls the drive system 12 so that the light irradiation device 11 moves from the second irradiation position to the third irradiation position where the light irradiation device 11 can irradiate the processing shot area SA3 with a plurality of processing lights ELk.

[0101] During the period when the supporting device 14 is moving (i.e., the beam member 141, which had been contracted, is expanding), the control device 2 controls a drive system (not shown) that expands and contracts the partition member 132 so that the partition member 132 is maintained in the first contracted state. As a result, the movement of the supporting device 14 (i.e., the movement of the containing device 13) is not hindered by contact between the end 134 of the partition member 132 and the coating film SF. Furthermore, the coating film SF is not damaged by contact between the end 134 and the coating film SF during the movement of the supporting device 14. However, if the movement of the supporting device 14 is not hindered by contact between the end 134 and the coating film SF, at least a part of the end 134 may be in contact with the coating film SF during at least a part of the period when the supporting device 14 is moving. If the coating film SF is not damaged by contact between the end portion 134 and the coating film SF during movement of the support device 14, at least a portion of the end portion 134 may be in contact with the coating film SF during at least a portion of the period during which the support device 14 is moving.

[0102] Furthermore, during the period when the support device 14 is moving, the control device 2 controls the drive system 15 so that the front leg member 142 is maintained in the second contracted state. As a result, the movement of the support device 14 (i.e., the movement of the storage device 13) is not hindered by contact between the end 144 of the front leg member 142 and the coating film SF. Furthermore, the coating film SF is not damaged by contact between the end 144 and the coating film SF during the movement of the support device 14. However, if the movement of the support device 14 is not hindered by contact between the end 144 and the coating film SF, at least a part of the end 144 may be in contact with the coating film SF during at least a part of the period when the support device 14 is moving. If the coating film SF is not damaged by contact between the end 144 and the coating film SF during the movement of the support device 14, at least a part of the end 144 may be in contact with the coating film SF during at least a part of the period when the support device 14 is moving.

[0103] Furthermore, while the support device 14 is moving, the control device 2 controls the drive system 15 so that the leg members 142 other than the front leg member 142 among the multiple leg members 142 are maintained in the first extended state. As a result, even if the end 144 of the front leg member 142 is separated from the paint film SF, the end 144 of the leg members 142 other than the front leg member 142 is in contact with the paint film SF. Therefore, the support device 14 remains capable of standing on the paint film SF (or is capable of being attached to the paint film SF so as to hang down from the paint film SF) in the same way as when all the end portions 144 of the multiple leg members 142 are in contact with the paint film SF.

[0104] Furthermore, during the period in which the supporting device 14 is moving, the control device 2 controls the light irradiation device 11 so that the light irradiation device 11 does not irradiate the processing light ELk.

[0105] After the storage device 13 is placed in the second storage position, as shown in FIG. 16, the control device 2 controls a drive system (not shown) that expands and contracts the partition member 132 so that the partition member 132 switches from the first contracted state to the first extended state. As a result, the end 134 of the partition member 132 contacts and adheres to the paint film SF. Furthermore, the control device 2 controls the drive system 15 so that the front leg member 142 switches from the second contracted state to the second extended state. As a result, the end 144 of the front leg member 142 contacts and adheres to the paint film SF. Here, the extension operation of the partition member 132 and the extension operation of the front leg member 142 may be performed simultaneously or with a time lag.

[0106] Thereafter, as shown in FIG. 17, the control device 2 controls the drive system 15 so that the state of at least some of the leg members 142 that move relative to the coating film SF as the support device 14 moves (particularly, as described later, the extended beam member 141 contracts) among the multiple leg members 142 is switched from the second extended state to the second contracted state. The leg member 142 that moves relative to the coating film SF as the extended beam member 141 contracts is typically the leg member 142 located on the rear side of the movement direction of the support device 14 among the multiple leg members 142. In the example shown in FIG. 17, the leg member 142 located on the rear side of the movement direction of the support device 14 is the leg member 142 located on the -X side. Hereinafter, the leg member 142 located on the rear side of the movement direction of the support device 14 is referred to as the "rear leg member 142". As a result, the end portion 144 of the rear leg member 142 moves away from the coating film SF.

[0107] Thereafter, as shown in FIG. 18, the control device 2 controls the drive system 15 so that the beam members 141, which have been extended along the movement direction of the support device 14, contract.

[0108] After the beam member 141 has been contracted, the control device 2 controls the drive system 15 so that the rear leg member 142 switches from the second contracted state to the second extended state, as shown in Fig. 19. As a result, the end 144 of the rear leg member 142 comes into contact with and adheres to the paint film SF.

[0109] Thereafter, the control device 2 controls the light irradiation device 11 so that the multiple processing lights ELk scan the processing shot areas SA3 and SA4 in the same manner as when the multiple processing lights ELk scan the processing shot areas SA1 and SA2. By repeating the same operation thereafter, the multiple processing lights ELk are irradiated onto the surface of the coating film SF (particularly, the area of ​​the coating film SF where the riblet structure is to be formed). As a result, the riblet structure is formed by the coating film SF on the processing object S.

[0110] (1-3) Technical effects of processing system SYSa As described above, the processing system SYSa of the first embodiment can form a riblet structure by the coating film SF on the surface of the workpiece S by irradiating the processing light ELk onto the workpiece S (particularly, the coating film SF formed on the surface of the workpiece S). Therefore, the processing system SYSa can form the riblet structure relatively easily and in a relatively short time, compared to a processing device that forms a riblet structure by scraping away the surface of the workpiece S with a cutting tool such as an end mill.

[0111] Furthermore, the processing system SYSa can simultaneously irradiate a plurality of processing beams ELk to form a plurality of concave structures CP1 at the same time, which improves the throughput in forming the riblet structure compared to a processing system that can irradiate a single processing beam ELk to form only a single concave structure CP1 at a time.

[0112] Furthermore, the processing system SYSa can scan the coating film SF at a relatively high speed by deflecting the multiple processing light beams ELk with the galvanometer mirror 113. This improves the throughput in forming the riblet structure.

[0113] Furthermore, instead of directly processing the workpiece S, the processing system SYSa can form a riblet structure on the surface of the workpiece S by processing the coating film SF formed on the surface of the workpiece S. Therefore, it is possible to avoid an increase in the weight of the workpiece S due to the formation of the riblet structure, compared to a processing system that forms a riblet structure by newly adding (e.g., attaching) a special material for forming the riblet structure to the surface of the workpiece S (i.e., the surface of the coating film SF).

[0114] Furthermore, because the processing system SYSa does not directly process the workpiece S, it can relatively easily re-form the riblet structure. Specifically, when re-forming the riblet structure, the riblet structure formed by the coating film SF is first peeled off, and then a new coating film SF is applied. The processing system SYSa can then process the newly applied coating film SF to form a new riblet structure. Therefore, deterioration of the riblet structure (e.g., damage, etc.) can be dealt with relatively easily by re-forming the riblet structure.

[0115] Furthermore, because the processing system SYSa does not directly process the workpiece S, it can form a riblet structure on the surface of the workpiece S that is difficult to process directly or on which a riblet structure is not originally formed. In other words, if the processing system SYSa processes the coating film SF after the coating film SF is applied to the surface of the workpiece S, it is possible to form a riblet structure relatively easily.

[0116] In addition, when the coating film SF is applied to the workpiece S and then processed, the processing operation for processing the workpiece S may include an operation of applying (i.e., forming) the coating film SF to the workpiece S and an operation of processing the coating film SF (e.g., partially removing the coating film SF). The operation of applying the coating film SF to the workpiece S may be performed by the processing system SYSa. In this case, the processing system SYSa may be equipped with a coating device for applying the coating film SF to the workpiece S. The operation of applying the coating film SF to the workpiece S may be performed outside the processing system SYSa. For example, the operation of applying the coating film SF to the workpiece S may be performed by a coating device outside the processing system SYSa.

[0117] Furthermore, the processing system SYSa can form a riblet structure using a coating film SF. The coating film SF usually has a relatively high durability against the external environment (for example, at least one of heat, light, and wind). Therefore, the processing system SYSa can relatively easily form a riblet structure having a relatively high durability.

[0118] Furthermore, in the first embodiment, the optical path of the processing light ELk between the final optical element of the light irradiation device 11 and the coating film SF is included in the accommodation space SP. Therefore, compared to a processing system in which the optical path of the processing light ELk is not included in the accommodation space SP (i.e., it is open to an open space), it is possible to appropriately prevent the processing light ELk irradiated to the coating film SF (or the scattered light or reflected light of the processing light ELk from the coating film SF, etc.) from propagating to the surroundings of the processing system SYSa (in other words, scattering). Furthermore, it is possible to appropriately prevent unnecessary substances generated by the irradiation of the processing light ELk from propagating to the surroundings of the processing system SYSa (in other words, scattering).

[0119] Furthermore, in the first embodiment, the light irradiation device 11 is supported by a support device 14 that is movable over the coating film SF. Therefore, the processing system SYSa can relatively easily process a coating film SF that spreads over a relatively wide area. In other words, the processing system SYSa can form a riblet structure by the coating film SF over a relatively wide area on the surface of the workpiece S. Furthermore, since the processing system SYSa does not need to move the workpiece S, it can relatively easily form a riblet structure even on the surface of a relatively large or heavy workpiece S.

[0120] Furthermore, the processing system SYSa can use the exhaust device 16 to suck unnecessary substances generated by the irradiation of the processing light ELk to the outside of the accommodation space SP. Therefore, the irradiation of the processing light ELk to the coating film SF is hardly hindered by unnecessary substances. Therefore, the irradiation accuracy of the processing light ELk is improved compared to a processing system that does not have the exhaust device 16 (i.e., the irradiation of the processing light ELk to the coating film SF may be hindered by unnecessary substances). As a result, the formation accuracy of the riblet structure is improved.

[0121] Furthermore, the processing system SYSa can use the gas supply device 17 to prevent dirt from adhering to the optical surface 1141 of the fθ lens 114 (i.e., the optical surface on the side of the storage space SP of the terminal optical element of the light irradiation device 11). Therefore, compared to a processing device not equipped with the gas supply device 17, there is a smaller possibility that the irradiation of the processing light ELk to the coating film SF will be hindered by dirt that has adhered to the optical surface 1141. This improves the irradiation accuracy of the processing light ELk. As a result, the formation accuracy of the riblet structure improves.

[0122] Furthermore, in the first embodiment, the multi-beam optical system 112 splits the source light ELo into a plurality of processing lights ELk using the polarizing beam splitter 1121. Therefore, the multi-beam optical system 112 can suppress energy loss (e.g., light attenuation) in the process of splitting the source light ELo into a plurality of processing lights ELk. As a result, the processing system SYSa can process the workpiece S by irradiating the coating film SF with a plurality of processing lights ELk having a relatively high intensity, compared to a case in which the energy loss in the process of splitting the source light ELo into a plurality of processing lights ELk is not suppressed. Therefore, the throughput regarding the formation of the riblet structure is improved, compared to a case in which the coating film SF is irradiated with a plurality of processing lights ELk having a relatively low intensity to process the workpiece S.

[0123] However, as long as the source light ELo can be split into a plurality of processing lights ELk, the processing system SYSa may split the source light ELo into a plurality of processing lights ELk using a multi-beam optical system not equipped with a polarizing beam splitter 1121. For example, as shown in Fig. 20, which is a cross-sectional view showing the structure of another example of a multi-beam optical system, the processing system SYSa may include an optical system 1121' including optical elements (e.g., at least one of a beam splitter, a half mirror, and a dichroic mirror) that split the source light ELo into a first light EL1 and a second light EL2 (e.g., the first light EL1 and the second light EL2 in different or the same state), and an optical element (e.g., at least one of a reflecting optical element such as a reflecting mirror and a refractive optical element such as a lens) that returns the first light EL1 from the optical system 1121' to the optical system 1121' as a third light EL3. The light source light ELo may be split into a plurality of processing lights ELk by using a multi-beam optical system 112' in which the optical system 1121' merges the third light EL3 from the optical system 1123' and the fourth light EL4 from the optical system 1125' and emits the merged light as a plurality of processing lights ELk toward the galvanometer mirror 113. In this case, the optical system 1121', the optical system 1123', and the optical system 1125' may be aligned so that a plurality of axes along the traveling directions of the plurality of processing lights ELk emitted from the multi-beam optical system 112' intersect. The polarizing beam splitter 1121 provided in the multi-beam optical system 112 corresponds to a specific example of the optical system 1121'. The quarter wave plate 1122 and the reflecting mirror 1123 included in the multi-beam optical system 112 described above correspond to a specific example of an optical system 1123'. The quarter wave plate 1124 and the reflecting mirror 1125 included in the multi-beam optical system 112 described above correspond to a specific example of an optical system 1125'.

[0124] Furthermore, in the first embodiment, the polarizing beam splitter 1121 not only functions as an optical system that splits the source light ELo into s-polarized light ELs1 and p-polarized light ELp2, but also functions as an optical system that merges the p-polarized light ELp1 and the s-polarized light ELs2 that are incident on the polarizing beam splitter 1121 from different directions into a plurality of processing lights ELk proceeding to the galvanometer mirror 113. Therefore, it is possible to reduce the size of the multi-beam optical system 112 compared to a case in which an optical system (e.g., a polarizing beam splitter) that splits the source light ELo into s-polarized light ELs1 and p-polarized light ELp2 and an optical system (e.g., a polarizing beam splitter) that merges the p-polarized light ELp1 and the s-polarized light ELs2 into a plurality of processing lights ELk are separately provided.

[0125] (2) Machining system SYSb according to the second embodiment Next, a processing system SYS of a second embodiment (hereinafter, the processing system SYS of the second embodiment will be referred to as "processing system SYSb") will be described. The processing system SYSb of the second embodiment is different from the processing system SYS of the first embodiment described above, which branches the source light ELo into two processing lights ELk, in that the processing system SYSb can branch the source light ELo into three or more processing lights ELk. The processing system SYSb is different from the processing system SYSa described above in that it includes a light irradiation device 11b instead of the light irradiation device 11 in order to branch the source light ELo into three or more processing lights ELk. The light irradiation device 11b is different from the light irradiation device 11 in that it includes a plurality of multi-beam optical systems 112. Other features of the processing system SYSa of the first modified example may be the same as other features of the processing system SYS described above.

[0126] The multiple multi-beam optical systems 112 are connected in series in multiple stages along the optical path, as shown in Fig. 21. In other words, the multiple multi-beam optical systems 112 are arranged such that multiple processing light beams ELk emitted from one multi-beam optical system 112 are incident as multiple light source light beams ELo on another multi-beam optical system 112 connected in the next stage of the one multi-beam optical system 112.

[0127] 21, a wave plate 115b is disposed on the optical path between one multi-beam optical system 112 and another multi-beam optical system 112 connected at the next stage of the one multi-beam optical system 112. Therefore, the multiple processing light beams ELk emitted from the one multi-beam optical system 112 are incident on the other multi-beam optical system 112 as multiple light source light beams ELo via the wave plate 115b.

[0128] The wave plate 115b is an optical element capable of changing the polarization state of each processing light ELk passing through the wave plate 115b. The wave plate 115b is, for example, a quarter wave plate, but may be another type of wave plate (for example, at least one of a half wave plate, a one-eighth wave plate, and a one-wave plate). For example, the wave plate 115b may be capable of converting each processing light ELk into circularly polarized light (or polarized light other than linearly polarized light or non-polarized light). When the wave plate 115b is a quarter wave plate, the wave plate 115b can convert each processing light ELk, which is linearly polarized light, into circularly polarized light. Alternatively, even when the wave plate 115b is not a quarter wave plate, the wave plate 115b can convert each processing light ELk into circularly polarized light (or polarized light other than linearly polarized light or non-polarized light) if the characteristics of the wave plate 115b are appropriately set. For example, the plate thickness of the wave plate 115b may be set to a desired plate thickness that can change the polarization state of each processing light ELk to a desired state. For example, the direction of the optical axis of the wave plate 115b may be set to a desired direction that can change the polarization state of each processing light ELk to a desired state. As a result, each processing light ELk emitted by one multi-beam optical system 112 is incident on another multi-beam optical system 112 as an incident light ELi after the polarization state is changed. The other multi-beam optical system 112 branches each of the multiple incident lights ELi into multiple processing lights ELk in the same manner as when the incident light source light ELo is branched into multiple processing lights ELk. Therefore, the number of processing lights ELk emitted by the other multi-beam optical system 112 is greater than the number of processing lights ELk emitted by the one multi-beam optical system 112. Specifically, the number of processing lights ELk emitted by the other multi-beam optical system 112 is twice the number of processing lights ELk emitted by the one multi-beam optical system 112.

[0129] FIG. 21 shows an example in which three multi-beam optical systems 112 (specifically, multi-beam optical systems 112#1 to 112#3) are connected in series in multiple stages along the optical path. In this case, the source light ELo#1 from the light source 110 is first incident on the multi-beam optical system 112#1. As shown in FIG. 21 and FIG. 22(a), which is a cross-sectional view showing the state of the source light ELo, the multi-beam optical system 112#1 branches the source light ELo#1 into two processing lights ELk#1 (i.e., p-polarized light ELp1#1 and s-polarized light ELs2#1). Note that FIG. 22(b) shows beam spots formed by the two processing lights ELk#1 on an optical surface intersecting the two processing lights ELk#1. The two processing beams ELk#1 emitted by the multi-beam optical system 112#1 pass through a wave plate 115b#1 arranged on an optical path between the multi-beam optical system 112#1 and a multi-beam optical system 112#2 connected to the next stage of the multi-beam optical system 112#1. As a result, the two processing beams ELk#1 are converted into two incident beams ELi#21 and ELi#22 that are different from p-polarized light and s-polarized light, respectively.

[0130] The two incident lights ELi#21 and ELi#22 that have passed through the wavelength plate 115b#1 enter the multi-beam optical system 112#2. As shown in FIG. 21 and FIG. 22(a), the multi-beam optical system 112#2 splits the incident light ELi#21 into two processing lights ELk#21 (i.e., p-polarized light ELp1#21 and s-polarized light ELs2#21). Furthermore, as shown in FIG. 21 and FIG. 22(a), the multi-beam optical system 112#2 splits the incident light ELi#22 into two processing lights ELk#22 (i.e., p-polarized light ELp1#22 and s-polarized light ELs2#22). Therefore, the multi-beam optical system 112#2 outputs four processing lights ELk#21 and ELk#22. 22(b) shows the beam spots formed by the four processing beams ELk#21 and ELk#22 on the optical surface intersecting the four processing beams ELk#21 and ELk#22. The four processing beams ELk#21 and ELk#22 emitted by the multi-beam optical system 112#2 pass through the wave plate 115b#2 arranged on the optical path between the multi-beam optical system 112#2 and the multi-beam optical system 112#3 connected to the next stage of the multi-beam optical system 112#2. As a result, the polarization state of the two processing beams ELk#21 is changed, and the polarization state of the two processing beams ELk#22 is changed.

[0131] The four incident lights ELi#31 to ELi#34 that have passed through the wavelength plate 115b#2 are incident on the multi-beam optical system 112#3. As shown in FIG. 21 and FIG. 22(a), the multi-beam optical system 112#3 splits the incident light ELi#31 into two processing lights ELk#31 (i.e., p-polarized light ELp1#31 and s-polarized light ELs2#31). Furthermore, as shown in FIG. 21 and FIG. 22(a), the multi-beam optical system 112#3 splits the incident light ELi#32 into two processing lights ELk#32 (i.e., p-polarized light ELp1#32 and s-polarized light ELs2#32). Furthermore, as shown in FIG. 21 and FIG. 22(a), the multi-beam optical system 112#3 splits the incident light ELi#33 into two processing lights ELk#33 (i.e., p-polarized light ELp1#33 and s-polarized light ELs2#33). 21 and 22(a), the multi-beam optical system 112#3 splits the incident light ELi#34 into two processing lights ELk#34 (i.e., p-polarized light ELp1#34 and s-polarized light ELs2#34). Therefore, the multi-beam optical system 112#4 outputs the eight processing lights ELk#31 to ELk#34.

[0132] In this way, the processing system SYSb of the second embodiment can simultaneously irradiate the coating film SF with a larger number of processing light beams ELk than the processing system SYSa of the first embodiment described above. Specifically, when the processing system SYSb includes N multi-beam optical systems 112 connected in N stages (where N is an integer equal to or greater than 2), the processing system SYSb can simultaneously irradiate the coating film SF with 2^(N-1) times as many processing light beams ELk as the processing system SYSa described above. In other words, the processing system SYSb can simultaneously irradiate the coating film SF with 2^N processing light beams ELk. This improves the throughput in forming the riblet structure.

[0133] Furthermore, the angle formed by two axes along the traveling direction of two processing light ELk (particularly, p-polarized light ELp1 and s-polarized light ELs2 branched from the same light source light ELo) emitted by one multi-beam optical system 112 (i.e., the angle at which the two axes intersect) may be the same as the angle formed by two axes along the traveling direction of two processing light ELk (particularly, p-polarized light ELp1 and s-polarized light ELs2 branched from the same light source light ELo) emitted by another multi-beam optical system 112 connected at the next stage of the one multi-beam optical system 112. In the example shown in Figure 22, the angle θ#1 formed by two axes along the traveling direction of two processing light ELk#1 emitted by the multi-beam optical system 112#1 may be the same as the angle θ#2 formed by two axes along the traveling direction of two processing light ELk#21 emitted by the multi-beam optical system 112#2 and the angle θ#2 formed by two axes along the traveling direction of two processing light ELk#22 emitted by the multi-beam optical system 112#2. Similarly, the angle θ#2 formed by two axes along the traveling direction of the two processing light ELk#21 emitted by the multi-beam optical system 112#2 and the angle θ#2 formed by two axes along the traveling direction of the two processing light ELk#22 emitted by the multi-beam optical system 112#2 may be the same as the angle θ#3 formed by two axes along the traveling direction of the two processing light ELk#31 emitted by the multi-beam optical system 112#3, the angle θ#3 formed by two axes along the traveling direction of the two processing light ELk#32 emitted by the multi-beam optical system 112#3, the angle θ#3 formed by two axes along the traveling direction of the two processing light ELk#33 emitted by the multi-beam optical system 112#3, and the angle θ#3 formed by two axes along the traveling direction of the two processing light ELk#34 emitted by the multi-beam optical system 112#3.

[0134] Alternatively, the angle formed by two axes along the traveling direction of two processing light ELk emitted by one multibeam optical system 112 may be different from the angle formed by two axes along the traveling direction of two processing light ELk emitted by another multibeam optical system 112 connected to the next stage of the one multibeam optical system 112. In the example shown in Fig. 22, the angle θ#1 formed by two axes along the traveling direction of two processing light ELk#1 may be different from the angle θ#2 formed by two axes along the traveling direction of two processing light ELk#21 and the angle θ#2 formed by two axes along the traveling direction of two processing light ELk#22. Similarly, the angle θ#2 formed by the two axes along the traveling direction of the two processing lights ELk#21 and the angle θ#2 formed by the two axes along the traveling direction of the two processing lights ELk#22 may be different from the angle θ#3 formed by the two axes along the traveling direction of the two processing lights ELk#31, the angle θ#3 formed by the two axes along the traveling direction of the two processing lights ELk#32, the angle θ#3 formed by the two axes along the traveling direction of the two processing lights ELk#33, and the angle θ#3 formed by the two axes along the traveling direction of the two processing lights ELk#34.

[0135] In this case, the angle formed by the two axes along the traveling direction of the two processing light ELk emitted by one multibeam optical system 112 may be smaller than the angle formed by the two axes along the traveling direction of the two processing light ELk emitted by another multibeam optical system 112 connected to the next stage of the one multibeam optical system 112. In other words, the angle formed by the two axes along the traveling direction of the two processing light ELk emitted by the multibeam optical system 112 arranged relatively at the front stage may be smaller than the angle formed by the two axes along the traveling direction of the two processing light ELk emitted by the multibeam optical system 112 arranged relatively at the rear stage. In the example shown in FIG. 22, the angle θ#1 formed by the two axes along the traveling direction of the two processing light ELk#1 may be smaller than the angle θ#2 formed by the two axes along the traveling direction of the two processing light ELk#21 and the angle θ#2 formed by the two axes along the traveling direction of the two processing light ELk#22. Similarly, the angle θ#2 between the two axes along the traveling direction of the two processing beams ELk#21 and the angle θ#2 between the two axes along the traveling direction of the two processing beams ELk#22 may be smaller than the angle θ#3 between the two axes along the traveling direction of the two processing beams ELk#31, the angle θ#3 between the two axes along the traveling direction of the two processing beams ELk#32, the angle θ#3 between the two axes along the traveling direction of the two processing beams ELk#33, and the angle θ#3 between the two axes along the traveling direction of the two processing beams ELk#34. As a result, the possibility of vignetting of the multiple processing beams ELk at the fθ lens 114 is reduced compared to the case where the angle between the two axes along the traveling direction of the two processing beams ELk emitted by the multi-beam optical system 112 arranged at a relatively front stage is larger than the angle between the two axes along the traveling direction of the two processing beams ELk emitted by the multi-beam optical system 112 arranged at a relatively rear stage. However, the angle formed by the two axes along the traveling direction of the two processing lights ELk emitted by the multi-beam optical system 112 arranged at a relatively earlier stage may be larger than the angle formed by the two axes along the traveling direction of the two processing lights ELk emitted by the multi-beam optical system 112 arranged at a relatively later stage.

[0136] (3) Machining system SYSc according to the third embodiment Next, a processing system SYS of a third embodiment (hereinafter, the processing system SYS of the third embodiment will be referred to as "processing system SYSc") will be described. The processing system SYSc of the third embodiment differs from the processing system SYSa of the first embodiment described above in that it includes a multi-beam optical system 112c instead of the multi-beam optical system 112. Other features of the processing system SYSc may be the same as other features of the processing system SYSa described above. Therefore, hereinafter, the multi-beam optical system 112c of the third embodiment will be described with reference to FIG. 23. FIG. 23 is a cross-sectional view showing the structure of the multi-beam optical system 112c of the third embodiment.

[0137] 23, the multi-beam optical system 112c is different from the multi-beam optical system 112 described above in that it includes a drive system 1126c. Other features of the multi-beam optical system 112c may be the same as other features of the multi-beam optical system 112 described above.

[0138] The driving system 1126c can move the reflecting mirror 1125 under the control of the control device 2. The driving system 1126c can move the reflecting mirror 1125 with respect to the circularly polarized light ELc2 incident on the reflecting mirror 1125. Specifically, the driving system 1126c can move the reflecting mirror 1125 so that the reflecting mirror 1125 rotates around an axis along a plane intersecting (typically perpendicular to) the circularly polarized light ELc2 incident on the reflecting mirror 1125. The driving system 1126c may be capable of moving the reflecting mirror 1125 so that the reflecting mirror 1125 rotates around a single axis along a plane intersecting the circularly polarized light ELc2 incident on the reflecting mirror 1125. Alternatively, the drive system 1126c may be capable of moving the reflecting mirror 1125 so that the reflecting mirror 1125 rotates around two axes that are aligned along a plane that intersects with the circularly polarized light ELc2 incident on the reflecting mirror 1125 and that intersect with each other (typically, perpendicular to each other).

[0139] When the reflecting mirror 1125 moves, the angle of incidence of the circularly polarized light ELc2 on the reflecting surface 11251 of the reflecting mirror 1125 changes. When the angle of incidence of the circularly polarized light ELc2 on the reflecting surface 11251 of the reflecting mirror 1125 changes, the direction of travel of the s-polarized light ELs2 reflected by the separation surface 11211 changes with respect to the direction of travel of the p-polarized light ELp1 that has passed through the separation surface 11211. When the direction of travel of the s-polarized light ELs2 changes with respect to the direction of travel of the p-polarized light ELp1, the crossing angle at which the axis along the direction of travel of the p-polarized light ELp1 and the axis along the direction of travel of the s-polarized light ELs2 cross each other changes. In other words, the crossing angle at which the multiple axes along the directions of travel of the multiple processing light beams ELk emitted by the multi-beam optical system 112c cross each other changes. In this case, the reflecting mirrors 1123 and 1125 can function as an optical system that changes the crossing angle at which the multiple axes along the directions of travel of the multiple processing light beams ELk cross each other (i.e., the angle formed by the directions of travel of the multiple processing light beams ELk). When the crossing angle of the multiple axes along the traveling direction of the multiple processing lights ELk changes, the positional relationship (particularly, the relative positional relationship in the direction along the optical surface) of the multiple beam spots formed by the multiple processing lights ELk on the optical surface intersecting the traveling direction of the multiple processing lights ELk changes. In other words, when the crossing angle of the multiple axes along the traveling direction of the multiple processing lights ELk changes, the positional relationship (particularly, the relative positional relationship in the direction along the coating film SF) of the multiple beam spots formed by the multiple processing lights ELk on the coating film SF changes. In other words, when the crossing angle of the multiple axes along the traveling direction of the multiple processing lights ELk changes, the positional relationship (particularly, the relative positional relationship in the direction along the surface of the coating film SF) of the multiple target irradiation areas EA set on the coating film SF changes. Therefore, the drive system 1126c can move the reflection mirror 1125 to change the positional relationship of the multiple target irradiation areas EA set on the coating film SF.

[0140] As an example, Fig. 24(a) shows the multi-beam optical system 112c before the drive system 1126c moves the reflecting mirror 1125 by a desired amount (e.g., the reflecting mirror 1125 is in an initial position). The multiple processing lights ELk emitted by the multi-beam optical system 112c in the state shown in Fig. 24(a) form multiple beam spots shown in Fig. 24(b) on the coating film SF. Meanwhile, Fig. 24(c) shows the multi-beam optical system 112c after the drive system 1126c moves the reflecting mirror 1125 in the state shown in Fig. 24(a) by a desired amount. As shown in Fig. 24(c), when the driving system 1126c moves the reflecting mirror 1125, the incident angle of the circularly polarized light ELc2 with respect to the reflecting surface 11251 of the reflecting mirror 1125 and the crossing angle at which the axis along the traveling direction of the p-polarized light ELp1 intersects with the axis along the traveling direction of the s-polarized light ELs2 (i.e., the crossing angle at which the multiple axes along the traveling directions of the multiple processing light beams ELk emitted by the multi-beam optical system 112c intersect) change compared to before the driving system 1126c moves the reflecting mirror 1125. The multiple processing light beams ELk emitted by the multi-beam optical system 112c in the state shown in Fig. 24(c) form multiple beam spots shown in Fig. 24(d) on the coating film SF. 24(d), when the drive system 1126c moves the reflecting mirror 1125, the positional relationship of the multiple beam spots formed by the multiple processing lights ELk on the coating film SF (i.e., the positional relationship of the multiple target irradiation areas EA on the coating film SF) changes compared to before the drive system 1126c moves the reflecting mirror 1125. In particular, because the reflecting mirror 1125 moves, the beam spot formed by the s-polarized light ELs2 corresponding to the processing light ELk via the moving reflecting mirror 1125 moves relative to the beam spot formed by the p-polarized light ELp1 corresponding to the processing light ELk via the unmoving reflecting mirror 1123, and thus the positional relationship of the multiple target irradiation areas EA changes.

[0141] As described above, the driving system 1126c may be capable of moving the reflecting mirror 1125 so that the reflecting mirror 1125 rotates around a single axis. In this case, the driving system 1126c may move the reflecting mirror 1125 to change the positional relationship of the multiple target irradiation areas EA in a single direction along the coating film SF. For example, the driving system 1126c may move the reflecting mirror 1125 to change the positional relationship of the multiple target irradiation areas EA in either the X-axis direction or the Y-axis direction. Alternatively, as described above, the driving system 1126c may be capable of moving the reflecting mirror 1125 so that the reflecting mirror 1125 rotates around multiple axes. In this case, the driving system 1126c may move the reflecting mirror 1125 to change the positional relationship of the multiple target irradiation areas EA in each of the multiple directions along the coating film SF. For example, the driving system 1126c may move the reflecting mirror 1125 to change the positional relationship of the multiple target irradiation areas EA in each of the X-axis direction and the Y-axis direction.

[0142] The driving system 1126c may move the reflecting mirror 1125 under the control of the control device 2 so that a riblet structure having desired characteristics is formed. In other words, the driving system 1126c may change the positional relationship of multiple target irradiation areas EA under the control of the control device 2 so that a riblet structure having desired characteristics is formed. Hereinafter, an example of the operation of the driving system 1126c in forming a riblet structure (see Figures 6(a) and 6(b)) in which multiple concave structures CP1 extending along the Y-axis direction are arranged along the X-axis direction will be described.

[0143] The driving system 1126c may move the reflecting mirror 1125 to change the positional relationship of the multiple target irradiation areas EA in the X-axis direction in which the multiple concave structures CP1 are arranged (i.e., the direction intersecting the Y-axis direction in which each concave structure CP1 extends). In this case, for example, the arrangement pitch P1 of the multiple concave structures CP1 (and further, the arrangement pitch P2 of the convex structures CP2) can be changed along with the change in the positional relationship of the multiple target irradiation areas EA. Therefore, the driving system 1126c may move the reflecting mirror 1125 so that the arrangement pitch P1 of the multiple concave structures CP1 becomes a desired pitch. For example, FIG. 25(a) shows the positional relationship of the multiple target irradiation areas EA before the driving system 1126c moves the reflecting mirror 1125 by a desired amount (for example, when the reflecting mirror 1125 is in an initial position). When a plurality of target irradiation areas EA are set as shown in FIG. 25(a), a concave structure CP1 is formed in the workpiece S, in which the arrangement pitch P1 is a predetermined first pitch p1, as shown in FIG. 25(b). Meanwhile, FIG. 25(c) shows the positional relationship of the plurality of target irradiation areas EA after the driving system 1126c moves the reflecting mirror 1125 by a desired amount. FIG. 25(c) shows an example in which the reflecting mirror 1125 moves so that the plurality of target irradiation areas EA move apart along the X-axis. In this case, a concave structure CP1 is formed in the workpiece S, in which the arrangement pitch P1 is a predetermined second pitch p2 larger than the above-mentioned first pitch p1, as shown in FIG. 25(d). Alternatively, although not shown for the sake of simplicity, when the reflecting mirror 1125 moves so that the plurality of target irradiation areas EA move closer along the X-axis, a concave structure CP1 is formed in the workpiece S, in which the arrangement pitch P1 is a predetermined third pitch p3 smaller than the above-mentioned first pitch p1.

[0144] The driving system 1126c may move the reflecting mirror 1125 to change the positional relationship of the multiple target irradiation areas EA in a direction along the Y axis along which the multiple concave structures CP1 extend. The driving system 1126c may move the reflecting mirror 1125 to change the positional relationship of the multiple target irradiation areas EA in a direction intersecting both the X axis and the Y axis. Even in this case, the characteristics of the riblet structure can be changed according to the change in the positional relationship of the multiple target irradiation areas EA.

[0145] When the driving system 1126c moves the reflecting mirror 1125 to change the positional relationship of the multiple target irradiation areas EA, at least two of the multiple target irradiation areas EA may be at least partially overlapped as shown in Fig. 26(a). When at least two of the multiple target irradiation areas EA at least partially overlap, one recess C is formed by irradiation with two or more processing lights ELk as shown in Fig. 26(b). Therefore, the driving system 1126c may move the reflecting mirror 1125 so as to form the same recess C (i.e., the concave structure CP1) using at least two of the multiple processing lights ELk.

[0146] In particular, when at least two of the multiple target irradiation areas EA at least partially overlap, the intensity distribution of the multiple processing lights ELk on the coating film SF changes compared to when the multiple target irradiation areas EA do not overlap. As a result, when at least two of the multiple target irradiation areas EA at least partially overlap, the characteristics of the riblet structure formed change compared to when the multiple target irradiation areas EA do not overlap. For this reason, the driving system 1126c may move the reflecting mirror 1125 to at least partially overlap at least two of the multiple target irradiation areas EA so that the intensity distribution of the multiple processing lights ELk on the coating film SF becomes a desired intensity distribution capable of forming a riblet structure having desired characteristics. The driving system 1126c may move the reflecting mirror 1125 to change the overlap state of at least two of the multiple target irradiation areas EA so that the intensity distribution of the multiple processing lights ELk on the coating film SF becomes a desired intensity distribution capable of forming a riblet structure having desired characteristics. The change of the overlap state referred to here may include not only changing the overlap state of at least two target irradiation areas EA when the at least two target irradiation areas EA are at least partially overlapped, but also changing the state of at least two target irradiation areas EA between an at least partially overlap state and a non-overlapping state, and changing the relative position of at least two target irradiation areas EA when the at least two target irradiation areas EA are not overlapped. For example, when the intensity distribution of the multiple processing beams ELk on the coating film SF changes, the size of the riblet structure (particularly, at least one of the depth D of the concave structure CP1 and the height H of the convex structure CP2) may change. Therefore, the driving system 1126c may move the reflecting mirror 1125 so that the size of the riblet structure becomes a desired size. For example, when the intensity distribution of the multiple processing beams ELk on the coating film SF changes, the shape of the riblet structure may change. Therefore, the driving system 1126c may move the reflecting mirror 1125 so that the shape of the riblet structure becomes a desired shape.

[0147] In the above description, the multi-beam optical system 112c includes a drive system 1126c that moves the reflecting mirror 1125. However, the multi-beam optical system 112c may include a drive system that moves the reflecting mirror 1123 in addition to or instead of the drive system 1126c. This drive system may be capable of moving the reflecting mirror 1123 in a similar manner to the manner in which the drive system 1126c moves the reflecting mirror 1125. Even in this case, the same effects as those described above can be obtained.

[0148] In the above description, the multi-beam optical system 112c includes a drive system 1126c that moves the reflecting mirror 1125 under the control of the control device 2. However, the reflecting mirror 1125 may be moved (rotated) manually using a mechanical configuration such as a push-pull screw.

[0149] In the above description, the processing system SYSc moves the reflecting mirror 1125 to change the positional relationship of the multiple target irradiation areas EA on the coating film SF. However, the processing system SYSb may change the positional relationship of the multiple target irradiation areas EA on the coating film SF by a method other than the method of moving the reflecting mirror 1125. For example, when the multi-beam optical system 112c includes a refractive optical element such as a lens, the processing system SYSc may change the positional relationship of the multiple target irradiation areas EA on the coating film SF by using the refractive optical element. For example, the processing system SYSc may change the positional relationship of the multiple target irradiation areas EA by moving the refractive optical element (for example, rotating it around a certain axis) to change the traveling direction of at least one of the multiple processing lights ELk. For example, the processing system SYSc may change the positional relationship of the multiple target irradiation areas EA by changing the refractive index of the refractive optical element to change the traveling direction of at least one of the multiple processing lights ELk. An example of a refractive optical element with a variable refractive index is a liquid crystal lens.

[0150] Furthermore, the above-mentioned processing system SYSc irradiates the coating film SF with a plurality of processing lights ELk using the multi-beam optical system 112c (particularly, the polarizing beam splitter 1121). However, there is also a method for irradiating the coating film SF with a plurality of processing lights ELk without using the multi-beam optical system 112c (particularly, the polarizing beam splitter 1121). For example, when the light irradiation device 11 is equipped with a plurality of light sources 110, the processing system SYSc can irradiate the coating film SF with a plurality of light source lights ELo emitted by the plurality of light sources 110 as a plurality of processing lights ELk without using the multi-beam optical system 112c (particularly, the polarizing beam splitter 1121). Even when irradiating the coating film SF with a plurality of processing lights ELk without using such a multi-beam optical system 112c, the processing system SYSc may change the positional relationship of a plurality of target irradiation areas EA.

[0151] In the above description, the processing system SYSc includes a single multi-beam optical system 112c. That is, in the above description, the processing system SYSc that simultaneously irradiates the coating film SF with two processing lights ELk has been used. However, the processing system SYSc may include multiple multi-beam optical systems 112, similar to the processing system SYSb of the second embodiment. That is, the processing system SYSc may simultaneously irradiate the coating film SF with three or more (typically, 2^N) processing lights ELk. In other words, the processing system SYSc may include configuration elements specific to the processing system SYSb of the second embodiment (specifically, configuration elements related to the irradiation of three or more processing lights ELk). In this case, at least one of the multiple multi-beam optical systems 112 included in the processing system SYSc may be the multi-beam optical system 112c described in the third embodiment. Even in this case, the processing system SYSc can change the positional relationship of the multiple beam spots formed by the multiple processing lights ELk on the coating film SF (that is, the positional relationship of the multiple target irradiation areas EA on the coating film SF).

[0152] As an example, the processing system SYSc having two multi-beam optical systems 112, at least one of which is the multi-beam optical system 112c, can simultaneously irradiate the coating film SF with four processing lights ELk. That is, the processing system SYSc can simultaneously irradiate the coating film SF with four processing lights ELk emitted by the multi-beam optical system 112#2 shown in FIG. 21. In this case, as shown in FIG. 27(a), the processing system SYSc may move the reflecting mirror 1125 so that the four target irradiation areas EA onto which the four processing lights ELk are respectively irradiated do not overlap each other. As a result, as shown in FIG. 27(b), the processing system SYSc may simultaneously irradiate the coating film SF with four processing lights ELk to form four concave structures CP1. Alternatively, as shown in FIG. 27(c), the processing system SYSc may move the reflecting mirror 1125 so that the target irradiation areas EA partially overlap each other by two. As a result, as shown in Fig. 27(d), the processing system SYSc may simultaneously irradiate the coating film SF with four processing lights ELk to form two concave structures CP1 at the same time. Alternatively, as shown in Fig. 27(e), the processing system SYSc may move the reflecting mirror 1125 so that the four target irradiation areas EA partially overlap. As a result, as shown in Fig. 27(f), the processing system SYSc may simultaneously irradiate the coating film SF with four processing lights ELk to form one concave structure CP1.

[0153] In addition, in the third embodiment (4) Machining system SYSd according to the fourth embodiment Next, a processing system SYS of a fourth embodiment (hereinafter, the processing system SYS of the fourth embodiment will be referred to as "processing system SYSd") will be described. The processing system SYSc of the fourth embodiment differs from the processing system SYSa of the first embodiment described above in that it includes a light irradiation device 11d instead of the light irradiation device 11. Other features of the processing system SYSd may be the same as other features of the processing system SYSa described above. Therefore, hereinafter, the light irradiation device 11d of the fourth embodiment will be described with reference to FIG. 28. FIG. 28 is a cross-sectional view showing the structure of the light irradiation device 11d of the fourth embodiment.

[0154] 28, a light irradiation device 11d of the fourth embodiment is different from the above-described light irradiation device 11 in that it further includes a relay optical system 116d. Other features of the light irradiation device 11d may be the same as other features of the above-described light irradiation device 11, etc.

[0155] The relay optical system 116d is disposed on the optical path of the multiple processing light beams ELk between the multi-beam optical system 112 and the galvanometer mirror 113. Therefore, the multiple processing light beams ELk emitted from the multi-beam optical system 112 are incident on the galvanometer mirror 113 via the relay optical system 116d. The relay optical system 116d is aligned with the fθ lens 114 such that the rear focal plane (in other words, the exit focal plane) of the relay optical system 116d is located at the entrance plane of the fθ lens 114 (including its vicinity).

[0156] The relay optical system 116d is an optical system that guides the multiple processing light beams ELk to the galvanometer mirror 113. As shown in Fig. 29(a) and Fig. 29(b), the relay optical system 116d has a desired optical characteristic that can make the difference in the positions where the multiple light beams constituting the multiple processing light beams ELk that have passed through the relay optical system 116d pass on the pupil plane of the fθ lens 114 smaller than the difference in the positions where the multiple light beams constituting the multiple processing light beams ELk that have not passed through the relay optical system 116d pass on the pupil plane of the fθ lens 114. Note that Fig. 29(a) shows the positions where the multiple light beams constituting the multiple processing light beams ELk that have passed through both the multi-beam optical system 112 and the relay optical system 116d pass on the pupil plane of the fθ lens 114. On the other hand, Fig. 29(b) shows the positions where the multiple light beams constituting the multiple processing light beams ELk that have passed through the multi-beam optical system 112 but have not passed through the relay optical system 116d pass on the pupil plane of the fθ lens 114.

[0157] The smaller the difference in the positions at which the multiple light beams constituting the multiple processing light beams ELk pass on the pupil plane of the fθ lens 114, the smaller the possibility of vignetting of the processing light ELk by the fθ lens 114. Therefore, the processing system SYSd can appropriately irradiate the multiple processing light beams ELk onto the coating film SF.

[0158] Furthermore, the smaller the difference in the positions where the multiple light beams constituting the multiple processing lights ELk pass through on the pupil plane of the fθ lens 114, the smaller the difference in the incidence angle of the multiple processing lights ELk with respect to the image plane (for example, the surface of the coating film SF or its vicinity) where the multiple processing lights ELk are imaged. This is because the difference in the positions where the light passes through on the pupil plane is equivalent to the difference in the incidence angle of the light on the image plane. Therefore, the smaller the difference in the positions where the multiple light beams constituting the multiple processing lights ELk pass through on the pupil plane of the fθ lens 114, the closer the state where the processing system SYSd irradiates the coating film SF with the multiple processing lights ELk becomes to the state where the processing system SYSd irradiates the coating film SF with the multiple processing lights ELk via a telecentric optical system. Therefore, the processing system SYSd can appropriately irradiate the coating film SF with the multiple processing lights ELk.

[0159] The relay optical system 116d may be an optical system that optically conjugates the reflecting surfaces 11231 and 11251 of the reflecting mirrors 1123 and 1125 of the multi-beam optical system 112 of the light irradiation device 11d with the pupil plane of the fθ lens 114. When a plurality of multi-beam optical systems 112 are used, the relay optical system 116d may optically conjugate the reflecting surface of any one of the multi-beam optical systems 112 with the pupil plane of the fθ lens 114. For example, the relay optical system 116d may optically conjugate the reflecting surface 11231 or 11251 of any one of the reflecting mirrors 1123 or 1125 of the multi-beam optical systems 112 with the pupil plane of the fθ lens 114. The relay optical diameter 116d may be optically conjugate between a reflecting surface of a reflecting mirror of the multi-beam optical system 112 closest to the light source 110 and a reflecting surface of a reflecting mirror of the multi-beam optical system 112 closest to the fθ lens 114, and a pupil plane of the fθ lens 114. For example, the relay optical diameter 116d may be optically conjugate between an optical surface between a reflecting surface 11231 or 11251 of a reflecting mirror 1123 or 1125 of a multi-beam optical system 112 closest to the light source 110 among the multiple multi-beam optical systems 112 and a reflecting surface 11231 or 11251 of a reflecting mirror 1123 or 1125 of a multi-beam optical system 112 closest to the fθ lens 114 among the multiple multi-beam optical systems 112, and a pupil plane of the fθ lens 114.

[0160] The processing system SYSd of the fourth embodiment may include components specific to at least one of the processing system SYSb of the second embodiment to the processing system SYSc of the third embodiment. The components specific to the processing system SYSc of the third embodiment include components related to changing the positional relationship of the multiple target irradiation areas EA (for example, the drive system 1126c).

[0161] (5) Machining system SYSe according to the fifth embodiment Next, a processing system SYS of a fifth embodiment (hereinafter, the processing system SYS of the fifth embodiment will be referred to as "processing system SYSe") will be described. The processing system SYSe of the fifth embodiment is different from the processing system SYSa of the first embodiment described above in that it includes a light irradiation device 11e instead of the light irradiation device 11. The light irradiation device 11e is different from the light irradiation device 11 in that it includes an intensity adjustment device 117e. Other features of the processing system SYSe may be the same as other features of the processing system SYSa described above. Therefore, hereinafter, the intensity adjustment device 117e included in the light irradiation device 11e of the fifth embodiment will be described with reference to FIG. 30. FIG. 30 is a cross-sectional view showing the intensity adjustment device 117e of the fifth embodiment.

[0162] The intensity adjustment device 117e adjusts the intensity of at least one of the multiple processing lights ELk emitted by the multi-beam optical system 112. For example, the intensity adjustment device 117e may adjust the intensity of at least one of the multiple processing lights ELk so that the intensities of the multiple processing lights ELk emitted by the multi-beam optical system 112 are the same (i.e., uniform). Alternatively, for example, the intensity adjustment device 117e may adjust the intensity of at least one of the multiple processing lights ELk so that the intensities of at least two of the multiple processing lights ELk emitted by the multi-beam optical system 112 are different. Note that the intensity adjustment device 117e may adjust the intensity ratio of the multiple processing lights ELk emitted by the multi-beam optical system 112.

[0163] In order to adjust the intensity of at least one of the multiple processing lights ELk, the intensity adjusting device 117e may include, for example, an intensity sensor 1171e, an intensity sensor 1172e, a wave plate 1173e, and a driving system 1174e, as shown in FIG.

[0164] The intensity sensor 1171e is disposed on the reflecting mirror 1123. The intensity sensor 1171e is a detection device capable of detecting the intensity of the circularly polarized light ELc1 incident on the reflecting mirror 1123. The intensity of the circularly polarized light ELc1 is proportional to the intensity of the s-polarized light ELs1 reflected by the separation surface 11211. This is because the s-polarized light ELs1 passes through the quarter-wave plate 1122 and is converted into the circularly polarized light ELc1. Therefore, the intensity sensor 1171e can be said to be a detection device capable of indirectly detecting the intensity of the s-polarized light ELs1 by detecting the intensity of the circularly polarized light ELc1. Furthermore, the intensity of the circularly polarized light ELc1 is proportional to the intensity of the p-polarized light ELp1 emitted as the processing light ELk. This is because the circularly polarized light ELc1 passes through the quarter-wave plate 1122 and is converted into the p-polarized light ELp1. Therefore, the intensity sensor 1171e can be said to be a detection device that detects the intensity of the circularly polarized light ELc1 and indirectly detects the intensity of the p-polarized light ELp1 (that is, the intensity of one of the multiple processing lights ELk). The intensity sensor 1171e may detect leakage light that transmits through the reflecting surface of the reflecting mirror 1123. In this case, the intensity sensor 1171e may be disposed on the back side of the reflecting mirror 1123.

[0165] The intensity sensor 1172e is disposed on the reflecting mirror 1125. The intensity sensor 1172e is a detection device capable of detecting the intensity of the circularly polarized light ELc2 incident on the reflecting mirror 1125. The intensity of the circularly polarized light ELc2 is proportional to the intensity of the p-polarized light ELp2 that has passed through the separation surface 11211. This is because the p-polarized light ELp2 passes through the quarter-wave plate 1124 and is converted into the circularly polarized light ELc2. Therefore, the intensity sensor 1172e can be said to be a detection device capable of indirectly detecting the intensity of the p-polarized light ELp2 by detecting the intensity of the circularly polarized light ELc2. Furthermore, the intensity of the circularly polarized light ELc2 is proportional to the intensity of the s-polarized light ELs2 that is output as the processing light ELk. This is because the circularly polarized light ELc2 passes through the quarter-wave plate 1124 and is converted into the s-polarized light ELs2. Therefore, the intensity sensor 1172e can be said to be a detection device that detects the intensity of the circularly polarized light ELc2 and indirectly detects the intensity of the s-polarized light ELs2 (that is, the intensity of one of the multiple processing lights ELk). The intensity sensor 1172e may detect leakage light that transmits through the reflecting surface of the reflecting mirror 1125. In this case, the intensity sensor 1172e may be disposed on the back side of the reflecting mirror 1125.

[0166] The wave plate 1173e is disposed on the optical path of the source light ELo between the light source 110 and the polarizing beam splitter 1121. Therefore, in the fourth modified example, the source light ELo is incident on the polarizing beam splitter 1121 via the wave plate 1173e. The wave plate 1173e changes the polarization state of the source light ELo passing through the wave plate 1173e. The wave plate 1173e is, for example, a ½ wave plate, but may be another type of wave plate (for example, at least one of a ¼ wave plate, a ⅛ wave plate, and a 1 wave plate).

[0167] The drive system 1174e can move the wave plate 1173e under the control of the control device 2. Specifically, the drive system 1174e can move the wave plate 1173e so that the wave plate 1173e rotates around an axis along the traveling direction of the source light ELo. A plane including the optical axis of the wave plate 1173e usually intersects with the traveling direction of the source light ELo. For this reason, it can also be said that the drive system 1174e can move the wave plate 1173e so that a plane including the optical axis of the wave plate 1173e rotates around an axis along the traveling direction of the source light ELo.

[0168] When the wave plate 1173e rotates, the polarization state of the light source light ELo passing through the wave plate 1173e changes. In particular, when the wave plate 1173e rotates, the intensity ratio of p-polarized light and s-polarized light contained in the light source light ELo passing through the wave plate 1173e changes. When the intensity ratio of p-polarized light and s-polarized light contained in the light source light ELo passing through the wave plate 1173e changes, the intensity ratio of the s-polarized light ELs1 reflected by the separation surface 11211 of the polarizing beam splitter 1121 and the p-polarized light ELp1 passing through the separation surface 11211 changes. When the intensity ratio of the s-polarized light ELs1 and the p-polarized light ELp2 changes, the intensity ratio of the processing light ELk converted from the s-polarized light ELs1 (i.e., the p-polarized light ELp1) and the processing light ELk converted from the p-polarized light ELp2 (the s-polarized light ELs2) changes. In other words, as shown in FIG. 31, when the wave plate 1173e rotates, the intensity ratio of the multiple processing lights ELk emitted by the multi-beam optical system 112 changes according to the rotation angle. When the intensity ratio of the multiple processing beams ELk changes, the intensity of each of the multiple processing beams ELk also changes.

[0169] Therefore, under the control of the control device 2, the drive system 1174e rotates the wave plate 1173e so that the intensity ratio of the p-polarized light and the s-polarized light contained in the light source light ELo that has passed through the wave plate 1173e becomes a desired ratio, thereby allowing the intensity ratio of the multiple processing lights ELk emitted by the multi-beam optical system 112 to be set to a desired ratio. In other words, under the control of the control device 2, the drive system 1174e rotates the wave plate 1173e so that the intensity of each of the p-polarized light and the s-polarized light contained in the light source light ELo that has passed through the wave plate 1173e becomes a desired intensity, thereby allowing the intensity of each of the multiple processing lights ELk emitted by the multi-beam optical system 112 to be set to a desired intensity. Specifically, the control device 2 can specify the intensity (and further the intensity ratio) of the circularly polarized light ELc1 and ELc2 based on the detection results of the intensity sensors 1171e and 1172e. As described above, the intensities (further, the intensity ratio) of the circularly polarized light ELc1 and ELc2 are equivalent to the intensities (further, the intensity ratio) of the multiple processing light ELk. Therefore, based on the detection results of the intensity sensors 1171e and 1172e, the control device 2 can control the drive system 1174e to rotate the wave plate 1173e so that the intensities of the multiple processing light ELk become desired intensities and / or the intensity ratio of the multiple processing light ELk becomes desired ratios.

[0170] For example, the drive system 1174e may rotate the wave plate 1173e under the control of the control device 2 so that the intensities of the circularly polarized light ELc1 and ELc2 that can be specified from the detection results of the intensity sensors 1171e and 1172e become the same. In this case, the intensities of the multiple processing light ELk emitted by the multi-beam optical system 112 become the same (i.e., uniform). As a result, the processing system SYSe can irradiate multiple processing light ELk with uniform intensities to simultaneously form multiple concave structures CP1 with the same characteristics. Alternatively, for example, the drive system 1174e may rotate the wave plate 1173e under the control of the control device 2 so that the intensities of the circularly polarized light ELc1 and ELc2 that can be specified from the detection results of the intensity sensors 1171e and 1172e become different. In this case, the intensities of the multiple processing light ELk emitted by the multi-beam optical system 112 become different. As a result, the processing system SYSe can irradiate multiple processing light ELk with different intensities to simultaneously form multiple concave structures CP1 with different characteristics.

[0171] In the above description, the intensity sensor 1171e detects the intensity of the circularly polarized light ELc1. However, the intensity sensor 1171e may detect the intensity of the p-polarized light ELp1 converted from the circularly polarized light ELc1 and emitted as the processing light ELk. The intensity sensor 1171e may detect the intensity of the s-polarized light ELs1 converted into the circularly polarized light ELc1. Similarly, in the above description, the intensity sensor 1172e detects the intensity of the circularly polarized light ELc2. However, the intensity sensor 1172e may detect the intensity of the s-polarized light ELs2 converted from the circularly polarized light ELc2 and emitted as the processing light ELk. The intensity sensor 1172e may detect the intensity of the p-polarized light ELp2 converted into the circularly polarized light ELc2.

[0172] In the above description, the drive system 1174e is provided to move (rotate) the wave plate 1173e under the control of the control device 2. However, the wave plate 1173e may be moved (rotated) manually using a mechanical mechanism.

[0173] In the above description, the intensity sensors 1171e and 1172e are provided on the reflecting mirrors 1123 and 1125. However, the intensity sensors 1171e and 1172e may be provided on the exit side of the fθ lens 114. In this case, one intensity sensor may be provided movably within a plane intersecting with the optical axis of the fθ lens 114. The processing system SYSe may not be provided with the intensity sensors 1171e and 1172e.

[0174] The processing system SYSe of the fifth embodiment may have components specific to at least one of the processing systems SYSb of the second embodiment to SYSd of the fourth embodiment described above. The components specific to the processing system SYSd of the fourth embodiment include components related to the relay optical system 116d.

[0175] (6) Machining system SYSf according to the sixth embodiment Next, a processing system SYS of the sixth embodiment (hereinafter, the processing system SYS of the sixth embodiment will be referred to as "processing system SYSf") will be described. The processing system SYSf of the sixth embodiment is different from the processing system SYSa described above in that it includes a light irradiation device 11f instead of the light irradiation device 11. The light irradiation device 11f is different from the light irradiation device 11 in that it includes an intensity adjustment device 117f. Other features of the processing system SYSf of the sixth embodiment may be the same as other features of the processing system SYSa described above. Therefore, hereinafter, the intensity adjustment device 117f included in the light irradiation device 11f of the sixth embodiment will be described with reference to FIG. 32. FIG. 32 is a cross-sectional view showing the structure of the intensity adjustment device 117f.

[0176] The intensity adjustment device 117f adjusts the intensity of at least one of the multiple processing light beams ELk emitted by the multi-beam optical system 112, similar to the intensity adjustment device 117e of the fifth embodiment. The intensity adjustment device 117f is disposed on the optical path of the source light ELo between the light source 110 and the polarizing beam splitter 1121. Therefore, in the sixth embodiment, the source light ELo enters the polarizing beam splitter 1121 via the intensity adjustment device 117f.

[0177] In order to adjust the intensity of at least one of the multiple processing lights ELk, the intensity adjustment device 117f includes, for example, a polarizing beam splitter 1171f, a quarter-wave plate 1172f, a reflecting mirror 1173f, a quarter-wave plate 1174f, a reflecting mirror 1175f, and a wave plate 1176f, as shown in FIG. 32.

[0178] The source light ELo from the light source 111 is incident on the separation surface 11711f of the polarizing beam splitter 1171f. The s-polarized light ELs01 of the source light ELo is reflected at the separation surface 11711f. On the other hand, the p-polarized light ELp02 of the source light ELo passes through the separation surface 11711f. In other words, the polarizing beam splitter 1171f splits the source light ELo into the s-polarized light ELs01 and the p-polarized light ELp02.

[0179] The s-polarized light ELs01 reflected by the polarizing beam splitter 1171f passes through the quarter-wave plate 1172f. As a result, the s-polarized light ELs01 is converted into the circularly polarized light ELc01. The circularly polarized light ELc01 that passes through the quarter-wave plate 1172f is reflected by the reflecting surface 11731f of the reflecting mirror 1173f. The circularly polarized light ELc01 that is reflected by the reflecting mirror 1173f passes through the quarter-wave plate 1172f again and is converted into the p-polarized light ELp01. The p-polarized light ELp01 that passes through the quarter-wave plate 1172f is incident on the separation surface 11711f of the polarizing beam splitter 1171f.

[0180] On the other hand, the p-polarized light ELp02 that has passed through the polarizing beam splitter 1171e passes through the quarter-wave plate 1174f. As a result, the p-polarized light ELp02 is converted into the circularly polarized light ELc02. The circularly polarized light ELc02 that has passed through the quarter-wave plate 1174f is reflected by the reflecting surface 11751f of the reflecting mirror 1175f. The circularly polarized light ELc02 that has been reflected by the reflecting mirror 1175f passes through the quarter-wave plate 1174f again and is converted into the s-polarized light ELs02. The s-polarized light ELs02 that has passed through the quarter-wave plate 1174f is incident on the separation surface 11711f of the polarizing beam splitter 1171f.

[0181] The p-polarized light ELp01 incident on the separation surface 11711f passes through the separation surface 11711f. On the other hand, the s-polarized light ELs02 incident on the separation surface 11711f is reflected by the separation surface 11711f. Here, as shown in FIG. 32, the reflection mirrors 1173f and 1175f are aligned so that the angle of incidence of the circularly polarized light ELc01 on the reflection surface 11731f of the reflection mirror 1173f is the same as the angle of incidence of the circularly polarized light ELc02 on the reflection surface 11751f of the reflection mirror 1175f. In other words, the reflection mirrors 1173f and 1175f are aligned so that the angle between the reflection surface 11731f of the reflection mirror 1173f and the axis along the traveling direction of the circularly polarized light ELc01 is the same as the angle between the reflection surface 11751f of the reflection mirror 1175f and the axis along the traveling direction of the circularly polarized light ELc02. 32 shows an example in which the reflecting mirrors 1173f and 1175f are aligned so that the circularly polarized light ELc01 is perpendicularly incident on the reflecting surface 11731f and the circularly polarized light ELc02 is perpendicularly incident on the reflecting surface 11751f. As a result, the axis along the traveling direction of the p-polarized light ELp01 that has passed through the separation surface 11711f and the axis along the traveling direction of the s-polarized light ELs02 that has been reflected by the separation surface 11711f are parallel to each other. That is, the traveling direction of the p-polarized light ELp01 that has passed through the separation surface 11711f and the traveling direction of the s-polarized light ELs02 that has been reflected by the separation surface 11711f are aligned. In other words, the optical path of the p-polarized light ELp01 that has passed through the separation surface 11711f and the optical path of the s-polarized light ELs02 that has been reflected by the separation surface 11711f overlap with each other. Therefore, the polarizing beam splitter 1171f emits a composite light ELg in which the output light ELg01 corresponding to the p-polarized light ELp01 and the output light ELg02 corresponding to the s-polarized light ELs02 are overlapped. In other words, the polarizing beam splitter 1171f that emits two beams of output light ELg01 and ELg02 actually emits a single composite light ELg in which the output light ELg01 and ELg02 are combined. In FIG. 32, for the sake of convenience, the optical path of the p-polarized light ELp01 that has passed through the separation surface 11711f (i.e., the optical path of the output light ELg01) and the optical path of the s-polarized light ELs02 that has been reflected by the separation surface 11711f (i.e., the optical path of the output light ELg02) are shown slightly shifted from each other, but in reality, these two optical paths overlap each other.

[0182] The combined light ELg emitted by the polarizing beam splitter 1171f is incident on the wave plate 1176f. The wave plate 1176e is an optical element capable of changing the polarization state of the combined light ELg passing through the wave plate 1176e (i.e., the polarization state of each of the two combined lights ELg01 and ELg02 constituting the combined light ELg). The wave plate 1176f is, for example, a quarter wave plate, but may be another type of wave plate (for example, at least one of a half wave plate, a one-eighth wave plate, and a one-wave plate). For example, the wave plate 1176f may be capable of converting the combined light ELg into circularly polarized light (or polarized light other than linearly polarized light or non-polarized light). When the wave plate 1176f is a quarter wave plate, the wave plate 1176f can convert the combined light ELg, which is linearly polarized light, into circularly polarized light. Alternatively, even if the wave plate 1176f is not a quarter wave plate, the wave plate 1176f can convert the combined light ELg into circularly polarized light (or polarized light other than linearly polarized light or non-polarized light) if the characteristics of the wave plate 1176f are appropriately set. For example, the thickness of the wave plate 1176f may be set to a desired thickness that can change the polarization state of the combined light ELg to a desired state. For example, the direction of the optical axis of the wave plate 1176f may be set to a desired direction that can change the polarization state of the combined light ELg to a desired state.

[0183] The light that has passed through the wave plate 1176f is incident on the multi-beam optical system 112 as new source light ELo'. Therefore, the new source light ELo' corresponds to light obtained by superposing the source light ELo01' obtained by deflecting the polarization state of the emission light ELg01 with the wave plate 1176f and the source light ELo02' obtained by deflecting the polarization state of the emission light ELg02 with the wave plate 1176f. Even when such driving light ELo' is incident on the multi-beam optical system 112, the multi-beam optical system 112 splits the source light ELo' into multiple processing light ELk, in the same way as when the driving light ELo is incident on the multi-beam optical system 112 described above.

[0184] 32, the polarizing beam splitter 1171f, the quarter-wave plate 1172f, the reflecting mirror 1173f, the quarter-wave plate 1174f, and the reflecting mirror 1175f included in the intensity adjustment device 117f have the same functions as the polarizing beam splitter 1121, the quarter-wave plate 1122, the reflecting mirror 1123, the quarter-wave plate 1124, and the reflecting mirror 1125 included in the multi-beam optical system 112. However, the intensity adjustment device 117f differs from the multi-beam optical system 112 in that the incident angle of the circularly polarized light ELc01 to the reflecting mirror 1173f is the same as the incident angle of the circularly polarized light ELc02 to the reflecting mirror 1175f. Furthermore, the wave plate 1176f included in the intensity adjustment device 117f has the same function as the wave plate 115b described in the second embodiment (i.e., the wave plate 115b arranged in the optical path between the two multi-beam optical systems 112). Therefore, it can be said that the intensity adjustment device 117f is equivalent to an optical system including the uppermost multi-beam optical system 112 (i.e., closest to the light source 110) included in the processing system SYSb of the second embodiment and the wave plate 115b through which the processing light ELk emitted by the uppermost multi-beam optical system 112 passes (however, the reflecting mirrors 1123 and 1125 are aligned so that the angle of incidence of the circularly polarized light ELc1 with respect to the reflecting mirror 1123 and the angle of incidence of the circularly polarized light ELc2 with respect to the reflecting mirror 1125 are the same).

[0185] When the light source light ELo enters the multi-beam optical system 112 via such an intensity adjustment device 117f, the intensities of the multiple processing lights ELk emitted by the multi-beam optical system 112 become the same (i.e., are uniform). The technical reasons for this will be described below with reference to Figs. 33(a) to 33(c). Each of Figs. 33(a) to 33(c) shows the process in which the light source light ELo is split into multiple processing lights ELk via the intensity adjustment device 117f and the multi-beam optical system 112, together with the intensity of the light generated in the process and the beam spot formed by the light on the coating film SF (or a predetermined optical surface). However, Fig. 33(a) shows the process in which the light source light ELo is split into multiple processing lights ELk when the light source light ELo emitted by the light source 110 includes p-polarized light ELp02 and s-polarized light ELs01 with uniform intensities. Fig. 33(b) shows a process in which the source light ELo is split into multiple processing light ELk when the source light ELo emitted by the light source 110 contains s-polarized light ELs01 that is less intense than the p-polarized light ELp02. Fig. 33(c) shows a process in which the source light ELo is split into multiple processing light ELk when the source light ELo emitted by the light source 110 contains s-polarized light ELs01 that is more intense than the p-polarized light ELp02.

[0186] As shown in FIG. 33(a) to FIG. 33(c), the intensity adjustment device 117f first splits the light source light ELo into p-polarized light ELp02 and s-polarized light ELs01 using the polarizing beam splitter 1171f. In this case, in the example shown in FIG. 33(a), the intensities of the split p-polarized light ELp02 and s-polarized light ELs01 are uniform. Note that the intensity here means the intensity per unit area on the coating film SF. Therefore, in the example shown in FIG. 33(a), if the split p-polarized light ELp02 and s-polarized light ELs01 are assumed to be irradiated onto the coating film SF, the beam spots formed by the split p-polarized light ELp02 and s-polarized light ELs01 will be approximately the same size. On the other hand, in the examples shown in FIG. 33(b) and FIG. 33(c), the intensities of the split p-polarized light ELp02 and s-polarized light ELs01 are not uniform. For this reason, in the examples shown in Figures 33(b) and 33(c), assuming that the branched p-polarized light ELp02 and s-polarized light ELs01 are irradiated onto the coating film SF, the beam spots formed by the branched p-polarized light ELp02 and s-polarized light ELs01 will be of different sizes.

[0187] Thereafter, the intensity adjustment device 117f converts the split p-polarized light ELp02 and s-polarized light ELs01 into s-polarized light ELs02 and p-polarized light ELp01 (i.e., emitted light ELg01 and ELg02) using quarter-wave plates 1172f and 1174f and reflecting mirrors 1173f and 1175f. In the example shown in FIG. 33(a), the intensities of the p-polarized light ELp02 and the s-polarized light ELs01 are uniform, so the intensities of the emitted light ELg01 and ELg02 generated from the p-polarized light ELp02 and the s-polarized light ELs01, respectively, are also uniform. On the other hand, in the examples shown in FIG. 33(b) and FIG. 33(c), the intensities of the p-polarized light ELp02 and the s-polarized light ELs01 are not uniform, so the intensities of the emitted light ELg01 and ELg02 generated from the p-polarized light ELp02 and the s-polarized light ELs01, respectively, are also not uniform.

[0188] Then, the intensity adjustment device 117f uses the polarizing beam splitter 1171f to combine the output light ELg01 and ELg02 to generate a combined light ELg, and then uses the wave plate 1176e to convert the combined light ELg into a new source light ELo'. The new source light ELo' is a superimposed light of the source light ELo01' obtained by changing the polarization state of the output light ELg01 with the wave plate 1176f and the source light ELo02' obtained by changing the polarization state of the output light ELg02 with the wave plate 1176f.

[0189] After that, the multi-beam optical system 112 splits the new light source light ELo' into a plurality of processing lights ELk. Specifically, since the light source light ELo' is a light in which the light source light ELo01' and ELo02' overlap, the multi-beam optical system 112 splits the light source light ELo01' into a plurality of processing lights ELk01 and splits the light source light ELo02' into a plurality of processing lights ELk02. However, since the light source light ELo01' and ELo02' overlap (that is, the optical path of the light source light ELo01' and the optical path of the light source light ELo02' overlap), the plurality of processing lights ELk01 and the plurality of processing lights ELk02 also overlap with each other. As a result, as shown in FIG. 33(a) to FIG. 33(c), each of the plurality of processing lights ELk emitted by the multi-beam optical system 112 is a light in which the processing light ELk01 and the processing light ELk02 are combined. Therefore, the intensities of the multiple processing lights ELk are uniform regardless of the intensity ratio of the s-polarized light ELs01 and the p-polarized light ELp02 contained in the source light ELo. In other words, the intensities of the multiple processing lights ELk are uniform regardless of whether the intensities of the s-polarized light ELs01 and the p-polarized light ELp02 are uniform or not.

[0190] As a comparative example, Fig. 34(a) to Fig. 34(c) show the process of splitting the light source light ELo into multiple processing lights ELk by the multi-beam optical system 112 without the intensity adjustment device 117f, together with the intensity of the light generated in the process and the beam spot formed by the light on the coating film SF (or a predetermined optical surface). In particular, Fig. 34(a) shows the process of splitting the light source light ELo into multiple processing lights ELk when the light source light ELo contains p-polarized light ELp2 and s-polarized light ELs1 with uniform intensity. Fig. 34(b) shows the process of splitting the light source light ELo into multiple processing lights ELk when the light source light ELo contains s-polarized light ELs1 with a lower intensity than the p-polarized light ELp2. Fig. 34(c) shows the process of splitting the light source light ELo into multiple processing lights ELk when the light source light ELo contains s-polarized light ELs1 with a higher intensity than the p-polarized light ELp2. As shown in Fig. 34(a), when the light source light ELo contains p-polarized light ELp02 and s-polarized light ELs01 with uniform intensities, the intensities of the multiple processing lights ELk emitted by the multi-beam optical system 112 are uniform without using the intensity adjustment device 117f. On the other hand, as shown in Fig. 34(b) and Fig. 34(c), when the light source light ELo contains p-polarized light ELp02 and s-polarized light ELs01 with inconsistent intensities, the intensities of the multiple processing lights ELk emitted by the multi-beam optical system 112 are not uniform unless the intensity adjustment device 117f is used. Therefore, the intensity adjustment device 1117f described in the sixth embodiment is particularly useful when it is desired to uniform the intensities of the multiple processing lights ELk emitted by the multi-beam optical system 112 under the circumstances where the light source light ELo contains p-polarized light ELp02 and s-polarized light ELs01 with inconsistent intensities.

[0191] Depending on the characteristics of the light source 110, when the intensity of the source light ELo emitted by the light source 110 is changed, the polarization state of the source light ELo (for example, the polarization direction and ellipticity) may change. Furthermore, depending on the characteristics of the light source 110, the polarization state of the source light ELo may change during the period during which the light source 110 is emitting the source light ELo. In particular, during the period from when the light source 110 starts emitting the source light ELo until a predetermined time has elapsed, the polarization state of the source light ELo is relatively likely to change. Even when the polarization state of the source light ELo changes in this way, the intensity adjustment device 117f of the sixth embodiment can align the intensities of the multiple processing lights ELk emitted by the multi-beam optical system 112 without performing any special processing in response to the change in the polarization state of the source light ELo. Furthermore, even in the case of the intensity adjustment device 117e of the above-mentioned fifth embodiment, by rotating the wave plate 1173e in accordance with the change in the polarization state of the light source light ELo, it is possible to align the intensities of the multiple processing light ELk emitted by the multi-beam optical system 112 or set the intensity of each of the multiple processing light ELk to a desired intensity.

[0192] The machining system SYSf of the sixth embodiment may include components specific to at least one of the machining system SYSb of the second embodiment to the machining system SYSe of the fifth embodiment. The components specific to the machining system SYSe of the fifth embodiment include components related to the intensity adjustment device 117e.

[0193] (7) Machining system SYSg according to the seventh embodiment Next, a processing system SYS of the seventh embodiment (hereinafter, the processing system SYS of the seventh embodiment will be referred to as "processing system SYSg") will be described. The processing system SYSg of the seventh embodiment branches the source light ELo into three or more processing lights ELk, similar to the processing system SYSb of the second embodiment described above. However, the processing system SYSg of the seventh embodiment is different from the above-mentioned processing system SYSb in which a plurality of multi-beam optical systems 112 are connected in multiple stages to branch the source light ELo into three or more processing lights ELk, in that the processing system SYSg of the seventh embodiment branches the source light ELo into three or more processing lights ELk using a single multi-beam optical system 112g. Other features of the processing system SYSg of the seventh embodiment may be the same as other features of the above-mentioned processing system SYSb. Therefore, hereinafter, the multi-beam optical system 112g of the seventh embodiment will be described with reference to FIG. 35 to FIG. 39. Note that Figure 35 shows an example of the structure of a multi-beam optical system 112g that branches the source light ELo into 16 processing lights ELk, but as long as the source light ELo can be branched into three or more processing lights ELk, the structure of the multi-beam optical system 112g is not limited to the structure shown in Figure 35.

[0194] As shown in FIG. 35, the multi-beam optical system 112g includes a polarizing beam splitter 1121g, a quarter-wave plate 1122g, a reflecting mirror 1123g-1, a reflecting mirror 1123g-2, a reflecting mirror 1123g-3, a quarter-wave plate 1124g, a reflecting mirror 1125g-1, a reflecting mirror 1125g-2, a reflecting mirror 1125g-3, a wave plate 1126g-1, a reflecting prism (or any other reflective optical element, for example, a retroreflective mirror) 1127g-1, a wave plate 1126g-2, a reflecting prism (or any other reflective optical element, for example, a retroreflective mirror) 1127g-2, and a reflecting mirror 1128g.

[0195] As shown in Fig. 36, the source light ELo#1 from the light source 111 is incident on the separation surface 11211g of the polarizing beam splitter 1121g. In this case, in the example shown in Fig. 36, the source light ELo#1 is incident on the polarizing beam splitter 1121g via the quarter-wave plate 1126g-2, but it may be incident on the polarizing beam splitter 1121g without passing through the quarter-wave plate 1126g-2. The s-polarized light ELs1#1 of the source light ELo#1 is reflected at the separation surface 11211g. On the other hand, the p-polarized light ELp2#1 of the source light ELo#1 passes through the separation surface 11211g.

[0196] The s-polarized light ELs1#1 reflected by the polarizing beam splitter 1121g passes through the quarter-wave plate 1124g. As a result, the s-polarized light ELs1#1 is converted into the circularly polarized light ELc1#1. The circularly polarized light ELc1#1 that passes through the quarter-wave plate 1124g is reflected by the reflecting surface 11251g-1 of the reflecting mirror 1125g-1. The circularly polarized light ELc1#1 that is reflected by the reflecting mirror 1125g-1 passes through the quarter-wave plate 1124g again and is converted into the p-polarized light ELp1#1. The p-polarized light ELp1#1 that passes through the quarter-wave plate 1124g is incident on the separation surface 11211g of the polarizing beam splitter 1121g. On the other hand, the p-polarized light ELp2#1 that passes through the polarizing beam splitter 1121g passes through the quarter-wave plate 1122g. As a result, the p-polarized light ELp2#1 is converted into the circularly polarized light ELc2#1. The circularly polarized light ELc2#1 that has passed through the quarter-wave plate 1122g is reflected by the reflecting surface 11231g-1 of the reflecting mirror 1123g-1. The circularly polarized light ELc2#1 that has been reflected by the reflecting mirror 1123g-1 passes through the quarter-wave plate 1122g again and is converted into the s-polarized light ELs2#1. The s-polarized light ELs2#1 that has passed through the quarter-wave plate 1122g is incident on the separation surface 11211g of the polarizing beam splitter 1121g.

[0197] The p-polarized light ELp1#1 incident on the separation surface 11211g passes through the separation surface 11211g. On the other hand, the s-polarized light ELs2#1 incident on the separation surface 11211g is reflected by the separation surface 11211g. Here, the reflecting mirrors 1123g-1 and 1125g-1 are aligned so that the angle of incidence of the circularly polarized light ELc1#1 on the reflecting surface 11251g-1 of the reflecting mirror 1125g-1 is different from the angle of incidence of the circularly polarized light ELc2#1 on the reflecting surface 11231g-1 of the reflecting mirror 1123g. As a result, the axis along the traveling direction of the p-polarized light ELp1#1 that has passed through the separation surface 11211g intersects with the axis along the traveling direction of the s-polarized light ELs2#1 reflected by the separation surface 11211g. Therefore, the p-polarized light ELp1#1 that passed through the separation surface 11211g and the s-polarized light ELs2#1 that was reflected by the separation surface 11211g are emitted as emitted lights ELe#21 and ELe#22 from the polarizing beam splitter 1121g toward the wave plate 1126g-1. At this stage, the source light ELo is first split into two emitted lights ELe#21 and ELe#22.

[0198] Thereafter, as shown in FIG. 37, each of the two output lights ELe#21 and ELe#22 output from the polarizing beam splitter 1121g passes through the wave plate 1126g-1, is reflected by the reflecting prism 1127g-1, and passes through the wave plate 1126g-1 again. The two output lights ELe#21 and ELe#22 that have passed through the wave plate 1126g-1 twice are incident on the separation surface 11211g of the polarizing beam splitter 1121g as two input lights ELi#21 and ELi#22, respectively. In other words, the wave plate 1126g-1 and the reflecting prism 1127g-1 function as an optical system that converts the output light ELe output from the polarizing beam splitter 1121g into the input light ELi that is input to the polarizing beam splitter 1121g (and further returns the converted input light ELi to the polarizing beam splitter 1121g). The reflecting prism 1127g-1 may be a right-angle prism having multiple intersecting reflecting surfaces.

[0199] The wave plate 1126g-1 changes the polarization state of each of the emitted lights ELe#21 and ELe#22 passing through the wave plate 1126g-1. The wave plate 1126g-1 is, for example, a ¼ wave plate, but may be another type of wave plate (for example, at least one of a ½ wave plate, a ⅛ wave plate, and a 1 wave plate). Particularly in the seventh embodiment, the wave plate 1126g-1 has a characteristic set so that the polarization state of each of the two emitted lights ELe#21 and ELe#22 is changed so that each of the incident lights ELi#21 and ELi#22 (that is, each of the emitted lights ELe#21 and ELe#22 that have passed through the wave plate 1126g-1 twice) becomes circularly polarized light (or polarized light other than linearly polarized light or non-polarized light). Examples of the characteristics of the wave plate 1126g-1 include at least one of the plate thickness of the wave plate 1126g-1, the direction of the optical axis of the wave plate 1126g-1, and the relative position of the wave plate 1126g-1 and the reflecting prism 1127g-1 (particularly, the relative orientation between the optical axis of the wave plate 1126g-1 and the transport axis of the reflecting prism 1127g-1). Here, when the reflecting prism 1127g-1 is a right-angle prism having two intersecting reflecting surfaces, the transport axis of the reflecting prism 1127g-1 may be an axis extending in a direction perpendicular to the ridge line of the two reflecting surfaces, or may be an axis along the traveling direction of light from one of the two reflecting surfaces to the other reflecting surface. In addition, the transport axis of the reflecting prism 1127g-1 may be an axis connecting the incident position (on the incident surface) of the incident light to the reflecting prism 1127g-1 and the exit position (on the exit surface) when the incident light exits from the reflecting prism 1127g-1.

[0200] The s-polarized light ELs1#21 of the incident light ELi#21 is reflected at the separation surface 11211g. On the other hand, the p-polarized light ELp2#21 of the incident light ELi#21 passes through the separation surface 11211g. Similarly, the s-polarized light ELs1#22 of the incident light ELi#22 is reflected at the separation surface 11211g. On the other hand, the p-polarized light ELp2#22 of the incident light ELi#22 passes through the separation surface 11211g.

[0201] The s-polarized light ELs1#21 and ELs1#22 reflected by the polarizing beam splitter 1121g pass through the quarter-wave plate 1122g. As a result, the s-polarized light ELs1#21 and ELs1#22 are converted into circularly polarized light ELc1#21 and ELc1#22, respectively. The circularly polarized light ELc1#21 and ELc1#22 that passed through the quarter-wave plate 1122g are each reflected by the reflecting surface 11231g-2 of the reflecting mirror 1123g-2. The circularly polarized light ELc1#21 and ELc#22 reflected by the reflecting mirror 1123g-2 pass through the quarter-wave plate 1122g again and are converted into p-polarized light ELp1#21 and ELp1#22, respectively. The p-polarized light ELp1#21 and ELp1#22 that have passed through the quarter-wave plate 1122g are incident on the separation surface 11211g of the polarizing beam splitter 1121g. On the other hand, the p-polarized light ELp2#21 and ELp2#22 that have passed through the polarizing beam splitter 1121g pass through the quarter-wave plate 1124g. As a result, the p-polarized light ELp2#21 and ELp2#22 are converted into the circularly polarized light ELc2#21 and ELc2#22, respectively. The circularly polarized light ELc2#21 and ELc2#22 that have passed through the quarter-wave plate 1124g are reflected by the reflecting surface 11251g-1 of the reflecting mirror 1125g-1. The circularly polarized light ELc2#21 and ELc2#22 reflected by the reflecting mirror 1125g-1 pass through the quarter-wave plate 1124g again and are converted into s-polarized light ELs2#21 and ELs2#22, respectively. The s-polarized light ELs2#21 and ELs#22 that have passed through the quarter-wave plate 1124g are incident on the separation surface 11211g of the polarizing beam splitter 1121g.

[0202] The p-polarized light ELp1#21 and ELp1#22 incident on the separation surface 11211g pass through the separation surface 11211g. On the other hand, the s-polarized light ELs2#21 and ELs2#22 incident on the separation surface 11211g are reflected by the separation surface 11211g. Here, the reflecting mirrors 1123g-2 and 1125g-1 are aligned so that the angles of incidence of the circularly polarized light ELc1#21 and ELc1#22 with respect to the reflecting surface 11231g-2 of the reflecting mirror 1123g-2 are different from the angles of incidence of the circularly polarized light ELc2#21 and ELc2#22 with respect to the reflecting surface 11251g-1 of the reflecting mirror 1125g-1. As a result, the axis along the traveling direction of the p-polarized light ELp1#21 and ELp1#22 that have passed through the separation surface 11211g intersects with the axis along the traveling direction of the s-polarized light ELs2#21 and ELs2#22 that have been reflected by the separation surface 11211g. Therefore, the p-polarized light ELp1#21 and ELp1#22 that have passed through the separation surface 11211g and the s-polarized light ELs2#21 and ELs2#22 that have been reflected by the separation surface 11211f are emitted from the polarizing beam splitter 1121g toward the wave plate 1126g-2 as the emitted light ELe#31 to ELe#34, respectively. In this way, in the process shown in FIG. 37, the two incident lights ELi#21 and ELi#22 are split into four emitted lights ELe#31 to ELe#34. That is, at this stage, the source light ELo is branched into four emitted lights ELe#31 to ELe#34.

[0203] As can be seen from Figures 36 and 37, the optical path in the process shown in Figure 36 (i.e., the optical path in the process in which the source light ELo is split into two emitted lights ELe#21 and ELe#22) does not overlap with the optical path in the process shown in Figure 37 (i.e., the optical path in the process in which the two emitted lights ELe#21 and ELe#22 are split into four emitted lights ELe#31 to ELe#34). In other words, the optical path in the process shown in Figure 36 and the optical path in the process shown in Figure 37 are optically separated. That is, in the process shown in Figure 37, the light propagates through an optical path different from the optical path (i.e., space) through which the light propagates in the process shown in Figure 36. However, the optical path in the process shown in Figure 36 and the optical path in the process shown in Figure 37 may at least partially overlap.

[0204] Thereafter, as shown in Fig. 38, each of the four emitted light beams ELe#31 to ELe#34 emitted from the polarizing beam splitter 1121g passes through the wave plate 1126g-2, is reflected by the reflecting prism 1127g-2, and passes through the wave plate 1126g-2 again. The four emitted light beams ELe#31 to ELe#34 that have passed through the wave plate 1126g-2 twice are incident on the separation surface 11211g of the polarizing beam splitter 1121g as the four incident light beams ELi#31 to ELi#34, respectively. In other words, the wave plate 1126g-2 and the reflecting prism 1127g-2 function as an optical system that converts the emitted light beam ELe emitted from the polarizing beam splitter 1121g into the incident light beam ELi that enters the polarizing beam splitter 1121g (and further returns the converted incident light beam ELi to the polarizing beam splitter 1121f). The reflecting prism 1127g-2 may be a right-angle prism having multiple intersecting reflecting surfaces.

[0205] The wave plate 1126g-2 changes the polarization state of each of the emitted lights ELe#31 to ELe#34 passing through the wave plate 1126g-2. The wave plate 1126g-2 is, for example, a ¼ wave plate, but may be another type of wave plate (for example, at least one of a ½ wave plate, a ⅛ wave plate, and a 1 wave plate). Particularly in the seventh embodiment, the wave plate 1126g-2 has a characteristic set so that the polarization state of each of the four emitted lights ELe#31 to ELe#34 is changed so that each of the incident lights ELi#31 to ELi#34 (that is, each of the emitted lights ELe#31 to ELe#34 that have passed through the wave plate 1126g-2 twice) becomes circularly polarized light (or polarized light other than linearly polarized light or non-polarized light). Examples of the characteristics of the wave plate 1126g-2 include at least one of the plate thickness of the wave plate 1126g-2, the direction of the optical axis of the wave plate 1126g-2, and the relative position of the wave plate 1126g-2 and the reflecting prism 1127g-2 (particularly, the relative orientation between the optical axis of the wave plate 1126g-2 and the transport axis of the reflecting prism 1127g-2). Here, when the reflecting prism 1127g-2 is a right-angle prism having two intersecting reflecting surfaces, the transport axis of the reflecting prism 1127g-2 may be an axis extending in a direction perpendicular to the ridge line of the two reflecting surfaces, or may be an axis along the traveling direction of light from one of the two reflecting surfaces to the other reflecting surface. In addition, the transport axis of the reflecting prism 1127g-2 may be an axis connecting the incident position (on the incident surface) of the incident light to the reflecting prism 1127g-2 and the exit position (on the exit surface) when the incident light exits from the reflecting prism 1127g-2.

[0206] The s-polarized light ELs1#31 to ELs1#34 contained in the incident lights ELi#31 to ELi#34, respectively, are reflected by the separation surface 11211g. On the other hand, the p-polarized light ELp2#31 to ELp2#34 contained in the incident lights ELi#31 to ELi#34, respectively, pass through the separation surface 11211g.

[0207] The s-polarized light ELs1#31 to ELs1#34 reflected by the polarizing beam splitter 1121g passes through the quarter-wave plate 1124g. As a result, the s-polarized light ELs1#31 to ELs1#34 is converted into the circularly polarized light ELc1#31 to ELc1#34, respectively. The circularly polarized light ELc1#31 to ELc1#34 that passes through the quarter-wave plate 1124g is reflected by the reflecting surface 11251g-2 of the reflecting mirror 1125g-2. The circularly polarized light ELc1#31 to ELc#34 reflected by the reflecting mirror 1125g-2 passes through the quarter-wave plate 1124g again, and is converted into the p-polarized light ELp1#31 to ELp1#34, respectively. The p-polarized light ELp1#31 to ELp1#34 that have passed through the quarter-wave plate 1124g are incident on the separation surface 11211g of the polarizing beam splitter 1121g. On the other hand, the p-polarized light ELp2#31 to ELp2#34 that have passed through the polarizing beam splitter 1121g pass through the quarter-wave plate 1122g. As a result, the p-polarized light ELp2#31 to ELp2#34 are converted into circularly polarized light ELc2#31 to ELc2#34, respectively. The circularly polarized light ELc2#31 to ELc2#34 that have passed through the quarter-wave plate 1122g are reflected by the reflecting surface 11231g-3 of the reflecting mirror 1123g-3. The circularly polarized light ELc2#31 to ELc2#34 reflected by the reflecting mirror 1123g-3 passes through the quarter-wave plate 1122g again and is converted into s-polarized light ELs2#31 to ELs2#34, respectively. The s-polarized light ELs2#31 to ELs#34 that have passed through the quarter-wave plate 1122g are incident on the separation surface 11211g of the polarizing beam splitter 1121g.

[0208] The p-polarized light ELp1#31 to ELp1#34 incident on the separation surface 11211g passes through the separation surface 11211g. On the other hand, the s-polarized light ELs2#31 to ELs2#34 incident on the separation surface 11211g is reflected by the separation surface 11211g. Here, the reflecting mirrors 1123g-3 and 1125g-2 are aligned so that the angle of incidence of the circularly polarized light ELc1#31 to ELc1#34 on the reflecting surface 11251g-2 of the reflecting mirror 1125g-2 is different from the angle of incidence of the circularly polarized light ELc2#31 to ELc2#34 on the reflecting surface 11231g-3 of the reflecting mirror 1123g-3. As a result, the axis along the traveling direction of the p-polarized light ELp1#31 to ELp1#34 that has passed through the separation surface 11211g intersects with the axis along the traveling direction of the s-polarized light ELs2#31 to ELs2#34 that has been reflected by the separation surface 11211g. Therefore, the p-polarized light ELp1#31 to ELp1#34 that has passed through the separation surface 11211g and the s-polarized light ELs2#31 to ELs2#34 that has been reflected by the separation surface 11211g are emitted from the polarizing beam splitter 1121g toward the wave plate 1126g-1 as the emitted light ELe#41 to ELe#48, respectively. In this way, in the process shown in FIG. 38, the four incident lights ELi#31 to ELi#34 are split into eight emitted lights ELe#41 to ELe#48. That is, at this stage, the source light ELo is branched into eight emitted lights ELe#41 to ELe#48.

[0209] 36 to 38, the optical path in the process shown in each of Fig. 36 and Fig. 37 does not overlap with the optical path in the process shown in Fig. 38 (i.e., the optical path in the process in which the four emitted beams ELe#31 to ELe#34 are split into eight emitted beams ELe#41 to ELe#48). However, the optical path in the process shown in Fig. 38 may at least partially overlap with the optical path in at least one of the processes shown in at least one of Figs. 36 to 37.

[0210] 39, each of the eight output beams ELe#41 to ELe#48 output from the polarizing beam splitter 1121g passes through a wave plate 1126g-1, is reflected by a reflecting prism 1127g-1, and passes through the wave plate 1126g-1 again. The eight output beams ELe#41 to ELe#48 that have passed through the wave plate 1126g-1 twice are incident on a separation surface 11211g of the polarizing beam splitter 1121g as eight input beams ELi#41 to ELi#48, respectively. The characteristics of the wavelength plate 1126g-1 are set so that they change the polarization state of each of the eight emitted lights ELe#41 to ELe#41 so that each of the incident lights ELi#41 to ELi#48 (i.e., each of the emitted lights ELe#41 to ELe#48 that have passed through the wavelength plate 1126f-1 twice) becomes circularly polarized (or polarized light other than linearly polarized light or non-polarized light).

[0211] The s-polarized light ELs1#41 to ELs1#48 contained in the incident lights ELi#41 to ELi#48, respectively, are reflected by the separation surface 11211g. On the other hand, the p-polarized light ELp2#41 to ELp2#48 contained in the incident lights ELi#41 to ELi#48, respectively, pass through the separation surface 11211g.

[0212] The s-polarized light ELs1#41 to ELs1#48 reflected by the polarizing beam splitter 1121g passes through the quarter-wave plate 1122g. As a result, the s-polarized light ELs1#41 to ELs1#48 are converted into circularly polarized light ELc1#41 to ELc1#48, respectively. The circularly polarized light ELc1#41 to ELc1#48 that passed through the quarter-wave plate 1122g is reflected by the reflecting surface 11231g-3 of the reflecting mirror 1123g-3. The circularly polarized light ELc1#41 to ELc#48 reflected by the reflecting mirror 1123g-3 passes through the quarter-wave plate 1122g again, and is converted into p-polarized light ELp1#41 to ELp1#48, respectively. The p-polarized light ELp1#41 to ELp1#48 that have passed through the quarter-wave plate 1122g are incident on the separation surface 11211g of the polarizing beam splitter 1121g. On the other hand, the p-polarized light ELp2#41 to ELp2#48 that have passed through the polarizing beam splitter 1121g pass through the quarter-wave plate 1124g. As a result, the p-polarized light ELp2#41 to ELp2#48 are converted into circularly polarized light ELc2#41 to ELc2#48, respectively. The circularly polarized light ELc2#41 to ELc2#48 that have passed through the quarter-wave plate 1124g are reflected by the reflecting surface 11251g-3 of the reflecting mirror 1125g-3. The circularly polarized light ELc2#41 to ELc2#48 reflected by the reflecting mirror 1125g-3 passes through the quarter-wave plate 1124g again and is converted into s-polarized light ELs2#41 to ELs2#48, respectively. The s-polarized light ELs2#41 to ELs#48 that have passed through the quarter-wave plate 1124g are incident on the separation surface 11211g of the polarizing beam splitter 1121g.

[0213] The p-polarized light ELp1#41 to ELp1#48 incident on the separation surface 11211g passes through the separation surface 11211g. On the other hand, the s-polarized light ELs2#41 to ELs2#48 incident on the separation surface 11211g is reflected by the separation surface 11211g. Here, the reflecting mirrors 1123g-3 and 1125g-3 are aligned so that the angle of incidence of the circularly polarized light ELc1#41 to ELc1#48 on the reflecting surface 11231g-3 of the reflecting mirror 1123g-3 is different from the angle of incidence of the circularly polarized light ELc2#41 to ELc2#48 on the reflecting surface 11251g-3 of the reflecting mirror 1125g-3. As a result, the axis along the traveling direction of the p-polarized light ELp1#41 to ELp1#48 that passed through the separation surface 11211g intersects with the axis along the traveling direction of the s-polarized light ELs2#41 to ELs2#48 that was reflected by the separation surface 11211g. Therefore, the p-polarized light ELp1#41 to ELp1#48 that passed through the separation surface 11211g and the s-polarized light ELs2#41 to ELs2#48 that was reflected by the separation surface 11211g are emitted from the polarizing beam splitter 1121g toward the reflecting mirror 1128g as the emitted light ELe#001 to ELe#016, respectively. In this way, in the process shown in FIG. 39, the eight incident light beams ELi#41 to ELi#48 are split into 16 emitted light beams ELe#001 to ELe#016. That is, at this stage, the source light ELo is branched into 16 emitted lights ELe#001 to ELe#016.

[0214] As can be seen from Figures 36 to 39, the optical path in the process shown in each of Figures 36 to 38 does not overlap with the optical path in the process shown in Figure 39 (i.e., the optical path in the process in which the eight emitted beams ELe#41 to ELe#48 are branched into the 16 emitted beams ELe#001 to ELe#016). However, the optical path in the process shown in Figure 39 may at least partially overlap with the optical path in at least one of the processes shown in Figures 36 to 38.

[0215] The reflection mirror 1128g reflects the 16 emission beams ELe#001 to ELe#016 as 16 processing beams ELk toward the galvanometer mirror 113. Therefore, the multi-beam optical system 112g can split the source beam ELo into 16 processing beams ELk and emit the 16 processing beams ELk toward the galvanometer mirror 113.

[0216] In this way, the processing system SYSg of the seventh embodiment can simultaneously irradiate 2^N processing light beams ELk onto the coating film SF, similar to the processing system SYSb of the second embodiment. This improves the throughput in forming the riblet structure. Furthermore, the processing system SYSg of the seventh embodiment can split the source light ELo into three or more processing light beams ELk using a single multi-beam optical system 112g. This makes it possible to miniaturize the multi-beam optical system 112g.

[0217] In addition, the processing system SYSg of the seventh embodiment is separately equipped with a plurality of reflecting mirrors 1123g-1 to 1123g-3 and 1125g-1 to 1125g-3 as optical elements for returning the p-polarized light or s-polarized light emerging from the polarizing beam splitter 1121g back to the polarizing beam splitter 1121g. For example, the processing system SYSg includes reflection mirrors 1123g-1 and 1125g-1 that return p-polarized or s-polarized light emitted from the polarizing beam splitter 1121g to the polarizing beam splitter 1121g in the process of splitting the source light ELo into two output lights ELi#21 to ELi#22 (see FIG. 36), reflection mirrors 1123g-2 and 1125g-1 that return p-polarized or s-polarized light emitted from the polarizing beam splitter 1121g to the polarizing beam splitter 1121g in the process of splitting the two output lights ELi#21 to ELi#22 into four output lights ELi#31 to ELi#34 (see FIG. 37), and four The device is equipped with reflecting mirrors 1123g-3 and 1125g-2 that return p-polarized or s-polarized light emitted from the polarizing beam splitter 1121g to the polarizing beam splitter 1121g in the process of splitting the output lights ELi#31 to ELi#34 into eight output lights ELi#41 to ELi#48 (see Figure 38), and reflecting mirrors 1123g-3 and 1125g-3 that return p-polarized or s-polarized light emitted from the polarizing beam splitter 1121g to the polarizing beam splitter 1121g in the process of splitting the eight output lights ELi#41 to ELi#48 into 16 output lights ELi#001 to ELi#016 (see Figure 39). In this case, if the processing system SYSg includes the drive system 1126c described in the third embodiment, at least one of the reflecting mirrors 1123g-1 to 1123g-3 and 1125g-1 to 1125g-3 can be moved separately from the remaining reflecting mirrors 1123g-1 to 1123g-3 and 1125g-1 to 1125g-3. This improves the degree of freedom in adjusting the positions of the beam spots of the multiple processing light ELk (i.e., the positions of the multiple target irradiation areas EA).

[0218] In the process of splitting the source light ELo into two emission lights ELi#21 to ELi#22 (see FIG. 36), the processing system SYSg can adjust the positions of the beam spots of the multiple processing lights ELk by moving at least one of the reflecting mirrors 1123g-1 and 1125g-1. In the process of splitting the two emission lights ELi#21 to ELi#22 into four emission lights ELi#31 to ELi#34 (see FIG. 37), the processing system SYSg can adjust the positions of the beam spots of the multiple processing lights ELk by moving at least one of the reflecting mirrors 1123g-2 and 1125g-1. In the process of splitting the four output beams ELi#31 to ELi#34 into eight output beams ELi#41 to ELi#48 (see FIG. 38), the processing system SYSg can adjust the positions of the beam spots of the multiple processing beams ELk by moving at least one of the reflecting mirrors 1123g-3 and 1125g-2. In the process of splitting the eight output beams ELi#41 to ELi#48 into 16 output beams ELi#001 to ELi#016 (see FIG. 39), the processing system SYSg can adjust the positions of the beam spots of the multiple processing beams ELk by moving at least one of the reflecting mirrors 1123g-3 and 1125g-3. In this case, if the reflecting mirrors 1123g-1, 1123g-2, 1125g-2, and 1125g-3 are movable, the positions of the beam spots of the multiple processing lights ELk can be adjusted throughout the entire process even if the reflecting mirrors 1123g-3 and 1125g-1 are not movable.

[0219] However, as shown in Fig. 40, the processing system SYSg may include a single reflecting mirror 1123g functioning as the reflecting mirrors 1123g-1 to 1123g-3, instead of the reflecting mirrors 1123g-1 to 1123g-3. Similarly, as shown in Fig. 40, the processing system SYSg may include a single reflecting mirror 1125g functioning as the reflecting mirrors 1125g-1 to 1125g-3, instead of the reflecting mirrors 1125g-1 to 1125g-3.

[0220] The machining system SYSg of the seventh embodiment may include components specific to at least one of the machining system SYSb of the second embodiment to the machining system SYSf of the sixth embodiment. The components specific to the machining system SYSf of the sixth embodiment include components related to the intensity adjustment device 117f.

[0221] (8) Machining system SYSh of the eighth embodiment Next, a processing system SYS of an eighth embodiment (hereinafter, the processing system SYS of the eighth embodiment will be referred to as "processing system SYSh") will be described. The processing system SYSh of the eighth embodiment is the same as the processing system SYSg of the seventh embodiment described above in that a single multi-beam optical system 112h is used to split the light source light ELo into three or more processing lights ELk. However, as shown in FIG. 41, which is a perspective view showing the structure of the multi-beam optical system 112h of the eighth embodiment, the multi-beam optical system 112h of the eighth embodiment is different from the multi-beam optical system 112g described above in that it does not need to include the wave plates 1126g-1 and 1126g-2. The other structures of the multi-beam optical system 112h of the eighth embodiment may be the same as the other structures of the multi-beam optical system 112g described above.

[0222] That is, the processing system SYSg of the seventh embodiment described above includes an optical system including a wave plate 1126g-1 and a reflecting prism 1127g-1, and an optical system including a wave plate 1126g-2 and a reflecting prism 1127g-2, as an optical system that converts the output light ELe output from the polarizing beam splitter 1121g into the input light ELi that enters the polarizing beam splitter 1121g (and further returns the converted input light ELi to the polarizing beam splitter 1121g). On the other hand, the processing system SYSh of the eighth embodiment includes an optical system including a reflecting prism 1127g-1 without including a wave plate 1126g-1, and an optical system including a reflecting prism 1127g-2 without including a wave plate 1126g-2, as an optical system that converts the output light ELe output from the polarizing beam splitter 1121g into the input light ELi that enters the polarizing beam splitter 1121g.

[0223] However, in the eighth embodiment, the reflecting prism 1127g-1 is aligned with the polarizing beam splitter 1121g so that the axis of movement AX7g-1 of the reflecting prism 1127g-1 forms an angle of 22.5 degrees with respect to the polarization plane of the output light ELe incident on the reflecting prism 1127g-1 from the polarizing beam splitter 1121g. The direction of the polarization plane of the output light ELe is determined depending on the transmission polarization orientation (or reflection polarization orientation) AX1g of the polarizing beam splitter 1121g. Therefore, as shown in FIG. 42(a) showing the relationship between the transfer axis AX7g-1 of the reflecting prism 1127g-1 and the transmission polarization orientation (or the reflection polarization orientation) AX1g of the light beam splitter 1121g, the reflecting prism 1127g-1 may be aligned with the polarizing beam splitter 1121g so that the transfer axis AX7g-1 of the reflecting prism 1127g-1 forms an angle of 22.5 degrees with respect to the transmission polarization orientation (or the reflection polarization orientation) AX1g of the polarizing beam splitter 1121g. As a result, even if the multi-beam optical system 112h does not include the wave plate 1126g-1, the exit light ELe reflected by the reflecting prism 1127g-1 is converted into the incident light ELi, which is circularly polarized (or polarized or unpolarized light other than linearly polarized light).

[0224] Similarly, the reflecting prism 1127g-2 is aligned with the polarizing beam splitter 1121g so that the axis of movement AX7g-2 of the reflecting prism 1127g-2 forms an angle of 22.5 degrees with respect to the polarization plane of the output light ELe entering the reflecting prism 1127g-2 from the polarizing beam splitter 1121g. The direction of the polarization plane of the output light ELe is determined depending on the transmission polarization orientation (reflection polarization orientation) gAX1g of the polarizing beam splitter 1121g. Therefore, as shown in FIG. 42(b) showing the relationship between the transfer axis AX7g-2 of the reflecting prism 1127g-2 and the transmission polarization orientation (or the reflection polarization orientation) AX1g of the polarizing beam splitter 1121g, the reflecting prism 1127g-2 may be aligned with the polarizing beam splitter 1121g such that the transfer axis AX7g-2 of the reflecting prism 1127g-2 forms an angle of 22.5 degrees with the transmission polarization orientation (or the reflection polarization orientation) AX1g of the polarizing beam splitter 1121g. As a result, the outgoing light ELe reflected by such a reflecting prism 1127g-2 is converted into the incoming light ELi, which is circularly polarized (or polarized or unpolarized other than linearly polarized).

[0225] The processing system SYSh of the eighth embodiment can achieve the same effects as those achieved by the processing system SYSg of the seventh embodiment. Furthermore, since the wave plates 1126g-1 and 1126g-2 are not required, the processing system SYSh can be made smaller.

[0226] (9) Machining system SYSi according to the ninth embodiment Next, a processing system SYS of a ninth embodiment (hereinafter, the processing system SYS of the ninth embodiment is referred to as "processing system SYSi") will be described. The processing system SYSi of the ninth embodiment may have the same structure as the processing system SYSa described above. Furthermore, like the processing system SYSa described above, the processing system SYSi of the ninth embodiment forms a riblet structure by alternately repeating a scanning operation in which a plurality of processing lights ELk scan the coating film SF along either the X-axis or the Y-axis, and a stepping operation in which a plurality of target irradiation areas EA on the coating film SF are moved by a predetermined amount along the other of the X-axis and the Y-axis. However, the processing system SYSi of the ninth embodiment differs from the processing system SYSa described above in the following points.

[0227] Specifically, the processing system SYSi (particularly, the control device 2) of the ninth embodiment aligns the extension direction of the concave structure CP1 constituting the riblet structure with the direction in which the multiple processing lights ELk scan the coating film SF by the scanning operation (hereinafter referred to as the "scanning direction"). That is, the processing system SYSi makes the extension direction of the concave structure CP1 parallel to the scanning direction. In other words, the processing system SYSi sets the angle between the extension direction of the concave structure CP1 and the scanning direction to zero degrees.

[0228] The processing system SYSi (particularly, the control device 2) further determines the scanning direction based on the characteristics of the galvanometer mirror 113 (that is, the characteristics of the X-scanning mirror 113X and the Y-scanning mirror 113Y). Specifically, for example, the processing system SYSi determines one of the X-axis direction and the Y-axis direction selected based on the characteristics of the galvanometer mirror 113 as the scanning direction. In this case, during the period in which the scanning operation is performed, the processing system SYSi deflects the multiple processing lights ELk with one of the X-scanning mirror 113X and the Y-scanning mirror 113Y, which is capable of scanning the multiple processing lights ELk on the coating film SF along the determined one direction. For example, when the X-axis direction is determined as the scanning direction, the processing system SYSi deflects the multiple processing lights ELk with the X-scanning mirror 113X during the period in which the scanning operation is performed, and scans the multiple processing lights ELk on the coating film SF along the X-axis. For example, when the Y-axis direction is determined as the scanning direction, the processing system SYSi deflects multiple processing light beams ELk with the Y scanning mirror 113Y during the scanning operation, and scans the multiple processing light beams ELk along the Y-axis on the coating film SF.

[0229] The characteristics of the galvanometer mirror 113 may include the masses of the X-scanning mirror 113X and the Y-scanning mirror 113Y. For example, the X-scanning mirror 113X and the Y-scanning mirror 113Y rotate (or swing) at a relatively high speed in order to deflect the processing light ELk. Here, the mirror that deflects the processing light ELk during the period in which the scanning operation is performed rotates faster than the mirror that polarizes the processing light ELk during the period in which the stepping operation is performed. This is because the stepping operation is an operation in which the processing light ELk scans the coating film SF along the scanning direction by the scanning operation, and then the target irradiation area EA, which is the irradiation position of the processing light ELk, is moved by a predetermined amount in the stepping direction that intersects with the scanning direction (typically perpendicular). In general, it is easier to rotate a relatively light mirror at a high speed than to rotate a relatively heavy mirror at a high speed. Therefore, the processing system SYSi may determine the direction in which the X-scanning mirror 113X or the Y-scanning mirror 113Y, whichever has a lighter mass, scans the processing light ELk as the scanning direction. In other words, when the X-scanning mirror 113X is lighter than the Y-scanning mirror 113Y, the processing system SYSi may determine the X-axis direction as the scanning direction. On the other hand, when the Y-scanning mirror 113Y is lighter than the X-scanning mirror 113X, the processing system SYSi may determine the Y-axis direction as the scanning direction.

[0230] The characteristics of the galvanometer mirror 113 may include the sizes of the X-scanning mirror 113X and the Y-scanning mirror 113Y. Specifically, it is generally easier to rotate a relatively small mirror at high speed than to rotate a relatively large mirror at high speed. Therefore, the processing system SYSi may determine the direction in which the smaller of the X-scanning mirror 113X and the Y-scanning mirror 113Y scans the processing light ELk as the scan direction. That is, when the X-scanning mirror 113X is smaller than the Y-scanning mirror 113Y, the processing system SYSi may determine the X-axis direction as the scan direction. On the other hand, when the Y-scanning mirror 113Y is smaller than the X-scanning mirror 113X, the processing system SYSi may determine the Y-axis direction as the scan direction. As described above, the processing light ELk from the multi-beam optical system 112 is reflected by the Y-scanning mirror 113Y and then reflected by the X-scanning mirror 113X. That is, while the Y-scanning mirror 113Y reflects the processing light ELk whose optical path does not change from the multi-beam optical system 112 (i.e., the processing light ELk propagating in a relatively narrow range), the X-scanning mirror 113X reflects the processing light ELk whose optical path from the Y-scanning mirror 113Y changes due to the rotation of the Y-scanning mirror 113Y (i.e., the processing light ELk propagating in a relatively wide range). For this reason, normally, the X-scanning mirror 113X is likely to be larger than the Y-scanning mirror 113Y.

[0231] The characteristics of the galvano mirror 113 may include the magnitude of the moment (i.e., force) required to rotate the X-scan mirror 113X and the Y-scan mirror 113Y. Specifically, it is easier to rotate a mirror that requires a relatively small moment to rotate at high speed than to rotate a mirror that requires a relatively large moment to rotate at high speed. Therefore, the processing system SYSi may determine, as the scan direction, the direction in which the mirror that requires a smaller moment to rotate, among the X-scan mirror 113X and the Y-scan mirror 113Y, scans the processing light ELk. In other words, when the moment required to rotate the X-scan mirror 113X is smaller than the moment required to rotate the Y-scan mirror 113Y, the processing system SYSi may determine, as the scan direction, the X-axis direction. On the other hand, when the moment required to rotate the Y-scan mirror 113Y is smaller than the moment required to rotate the X-scan mirror 113X, the processing system SYSi may determine, as the scan direction, the Y-axis direction.

[0232] Incidentally, the mass of the X scan mirror 113X and the Y scan mirror 113Y may be one factor that affects the moment required to rotate the X scan mirror 113X and the Y scan mirror 113Y. Therefore, it can be said that the operation of determining the scan direction based on the mass of the X scan mirror 113X and the Y scan mirror 113Y is a specific example of the operation of determining the scan direction based on the moment required to rotate the X scan mirror 113X and the Y scan mirror 113Y. Furthermore, the size of the X scan mirror 113X and the Y scan mirror 113Y may be one factor that affects the moment required to rotate the X scan mirror 113X and the Y scan mirror 113Y. Therefore, it can be said that the operation of determining the scan direction based on the size of the X scan mirror 113X and the Y scan mirror 113Y is a specific example of the operation of determining the scan direction based on the moment required to rotate the X scan mirror 113X and the Y scan mirror 113Y.

[0233] As described above, the scan direction intersects (typically perpendicular to) the step direction. Therefore, when the scan direction is determined, the step direction is also substantially determined. Therefore, it can be said that the operation of determining the scan direction based on the characteristics of the X scan mirror 113X and the Y scan mirror 113Y is equivalent to the operation of determining the step direction based on the characteristics of the X scan mirror 113X and the Y scan mirror 113Y.

[0234] In the ninth embodiment, the processing system SYSi may determine (or set) the scan direction prior to processing the workpiece S (i.e., forming the concave structure CP1), and may align the processing device 1 with respect to the workpiece S so that the determined scan direction is aligned with the extension direction of the concave structure CP1 to be formed. Specifically, the processing system SYSi first determines the scan direction. Note that, if the characteristics of the galvanometer mirror 113 are unlikely to change over time, the scan direction may be determined in advance. Furthermore, the processing system SYSi specifies the extension direction (i.e., the extension direction of the concave structure CP1) of the riblet structure to be formed in the workpiece S (specifically, the above-mentioned processing shot area SA) from the riblet information regarding the characteristics of the riblet structure optimized based on the above-mentioned simulation model. Thereafter, the processing system SYSi aligns the processing device 1 (particularly, the light irradiation device 11 that irradiates the processing light ELk to the processing object S) with respect to the processing object S so that the determined scanning direction and the extension direction of the identified concave structure CP1 are aligned (parallel). In this case, for example, the driving system 12 may move the light irradiation device 11 to align the processing device 1 with respect to the processing object S. For example, the driving system 15 may move the support device 14 that supports the light irradiation device 11 to align the processing device 1 with respect to the processing object S. Typically, the processing system SYSi may align the processing device 1 with respect to the processing object S so that the scanning direction and the extension direction of the identified concave structure CP1 are aligned (parallel) with each other by rotating the light irradiation device 11 around an axis (specifically, around the Z axis) that intersects with the coating film SF.

[0235] For example, FIG. 43(a) shows the movement trajectories of the multiple target irradiation areas EA on the coating film SF (i.e., the scanning trajectories of the multiple processing lights ELk) when the Y-axis direction is determined (set) as the scanning direction. In this case, the processing system SYSi forms a concave structure CP1 extending along the Y-axis, as shown in FIG. 43(b), to form a concave structure CP1 extending in a desired direction on the processing object S. Therefore, prior to the formation of the concave structure CP1, the processing device 1 is aligned with the processing object S so that a concave structure CP1 extending along the Y-axis is formed on the processing object S to form a concave structure CP1 extending in a desired direction on the processing object S. On the other hand, for example, FIG. 43(c) shows the movement trajectories of the multiple target irradiation areas EA on the coating film SF when the X-axis direction is determined (set) as the scanning direction. In this case, as shown in Fig. 43(d), the processing system SYSi forms a concave structure CP1 extending along the X-axis, thereby forming a concave structure CP1 extending in a desired direction on the work-piece S. In this case, prior to the formation of the concave structure CP1, the processing apparatus 1 is aligned with respect to the work-piece S so that a concave structure CP1 extending along the X-axis is formed on the work-piece S to form a concave structure CP1 extending in a desired direction.

[0236] When the processing device 1 is aligned with respect to the workpiece S in this way, the angle between the axis along the scanning direction and the axis along the extension direction of the concave structure CP1 becomes smaller than the angle between the axis along the step direction and the axis along the extension direction of the concave structure CP1. Finally, the processing device 1 is aligned with respect to the workpiece S so that the angle between the axis along the scanning direction and the axis along the extension direction of the concave structure CP1 becomes zero degrees. However, the processing device 1 does not necessarily have to be aligned with respect to the workpiece S until the angle between the axis along the scanning direction and the axis along the extension direction of the concave structure CP1 becomes zero degrees. For example, the processing device 1 may be aligned with respect to the workpiece S to such an extent that the angle between the axis along the scanning direction and the axis along the extension direction of the concave structure CP1 can be considered to be substantially zero degrees (that is, the scanning direction and the concave structure CP1 can be considered to be substantially parallel). For example, the processing apparatus 1 may be aligned with respect to the workpiece S to such an extent that the angle between the axis along the scanning direction and the axis along the extension direction of the concave structure CP1 is smaller than the angle between the axis along the step direction and the axis along the extension direction of the concave structure CP1.

[0237] In this way, the processing system SYSi of the ninth embodiment can align the scanning direction with the extension direction of the concave structure CP1. Therefore, if the processing system SYSi continues to continuously emit the source light ELo from the light source 110 during the period in which the scanning operation is performed, the processing system SYSi can form the concave structure CP1 extending along the scanning direction. In other words, the processing system SYSi can form the concave structure CP1 extending along the scanning direction without controlling the on / off switching of the irradiation of the source light ELo from the light source 110 during the period in which the scanning operation is performed. Therefore, the processing system SYSi can relatively easily form the concave structure CP1 extending in a desired direction.

[0238] Furthermore, the machining system SYSi of the ninth embodiment can determine the scan direction based on the characteristics of the galvanometer mirror 113. As a result, the machining system SYSi can form a riblet structure without excessively increasing the load for rotating the galvanometer mirror 113, compared to a case in which the scan direction is not determined based on the characteristics of the galvanometer mirror 113.

[0239] In addition to or instead of deflecting the processing light ELk with the galvanometer mirror 113, the processing system SYSi may move the light irradiation device 11 (particularly, move it relative to the coating film SF) to scan the multiple processing light beams ELk on the surface of the coating film SF. Not limited to the processing system SYSi, each of the above-mentioned processing systems SYSa to SYSh may also scan the multiple processing light beams ELk on the surface of the coating film SF by moving the light irradiation device 11 in addition to or instead of deflecting the processing light ELk with the galvanometer mirror 113.

[0240] In this case, for example, the processing system SYSi may control the drive system 12 to move the light irradiation device 11 relative to the coating film SF so that the processing light ELk scans the surface of the coating film SF. The drive system 12 that moves the light irradiation device 11 in this manner may include, for example, a drive device 12X that moves the light irradiation device 11 along the X-axis direction so that the processing light ELk scans the workpiece S along the X-axis, and a drive device 12Y that moves the light irradiation device 11 along the Y-axis direction so that the processing light ELk scans the workpiece S along the Y-axis, as shown in Fig. 44, which is a cross-sectional view showing the structure of the drive system 12. Note that the drive device 12X may include, for example, an X guide member 121X supported by a support member 133 and extending in the X-axis direction, an X mover 122X movable along the X guide member 121X, and an X stage 123X connected to the X mover 122X. The driving device 12Y may include, for example, a Y guide member 121Y supported by the X stage 123X and extending in the Y-axis direction, and a Y mover 122Y movable along the Y guide member 121Y and connected to the light irradiation device 11. According to such driving devices 12X and 12Y, when the X mover 122X moves along the X guide member 121X, the light irradiation device 11 supported by the X stage 123X connected to the X mover 122X via the Y guide member 121Y and the Y mover 122Y moves along the X axis. Furthermore, when the Y mover 122Y moves along the Y guide member 121Y, the light irradiation device 11 connected to the Y mover 122X moves along the Y axis. In this case, the processing system SYSi may determine the scan direction based on the characteristics of the driving device 12X and the driving device 12Y. For example, the processing system SYSi may determine the X-axis direction as the scan direction when the driving device 12X is lighter than the driving device 12Y, when the driving device 12X is smaller than the driving device 12Y, and / or when the force required to move the driving device 12X (e.g., to move the X mover 122X and the X stage 123X) is smaller than the force required to move the driving device 12Y (e.g., to move the Y mover 122Y).For example, the processing system SYSi may determine the Y-axis direction as the scan direction when the driving device 12Y is lighter than the driving device 12X, when the driving device 12Y is smaller than the driving device 12X, and / or when the force required to move the driving device 12Y is smaller than the force required to move the driving device 12X. In the example shown in FIG. 44, since the driving device 12X moves the light irradiation device 11 along the X-axis via the driving device 12Y, the driving device 12X needs to move the driving device 12Y as well in order to move the light irradiation device 11. On the other hand, since the driving device 12Y moves the light irradiation device 11 along the Y-axis without the driving device 12X, the driving device 12Y does not need to move the driving device 12X in order to move the light irradiation device 11. Therefore, in the example shown in FIG. 44, it is usually highly likely that the force required to move the driving device 12Y will be smaller than the force required to move the driving device 12X. Incidentally, the support member 133 may be a part of the structure of a hangar for an aircraft or the like, or may be attached to this structure.

[0241] Alternatively, for example, when the size of the workpiece S is not so large (for example, not as large as the above-mentioned aircraft), the processing system SYSi may move the workpiece S (particularly, move it relative to the light irradiation device 11) in addition to or instead of deflecting the processing light ELk with the galvanometer mirror 113, so that the multiple processing light beams ELk are scanned on the surface of the coating film SF. Note that not only the processing system SYSi, but also each of the above-mentioned processing systems SYSa to SYSh may move the workpiece S in addition to or instead of deflecting the processing light ELk with the galvanometer mirror 113, so that the multiple processing light beams ELk are scanned on the surface of the coating film SF.

[0242] In this case, the processing system SYSi may include a stage device 3 that can move while holding the workpiece S, and the control device 2 may control the stage device 3 to move the coating film SF relatively to the light irradiation device 11 so that the processing light ELk scans the surface of the coating film SF. Note that such a stage device 3 may include, for example, a stage device 3X that is movable to move the workpiece S along the X-axis direction so as to scan the workpiece S with the processing light ELk along the X-axis, and a stage device 3Y that is movable to move the workpiece S along the Y-axis direction so as to scan the workpiece S with the processing light ELk along the Y-axis, as shown in Fig. 45, which is a cross-sectional view showing the structure of the stage device 3. Note that the stage device 3X may include, for example, an X guide member 31X that is supported by a support member 39 such as a surface plate and extends in the X-axis direction, an X mover 32X that is movable along the X guide member 31X, and an X stage 33X connected to the X mover 32X. The stage device 3Y may include, for example, a Y guide member 31Y supported by the X stage 33X and extending in the Y-axis direction, a Y mover 32Y movable along the Y guide member 31Y, and a Y stage 33Y connected to the Y mover and capable of holding the workpiece S. According to such stage devices 3X and 3Y, when the X mover 32X moves along the X guide member 31X, the workpiece S supported by the X stage 33X connected to the X mover 32X via the Y guide member 31Y, the Y mover 32Y, and the Y stage 33Y moves along the X axis. Furthermore, when the Y mover 32Y moves along the Y guide member 31Y, the light irradiation device 11 supported by the Y mover 32X via the Y stage 33X moves along the Y axis. In this case, the processing system SYSi may determine the scan direction based on the characteristics of the stage device 3X and the stage device 3Y.For example, the processing system SYSi may determine the X-axis direction as the scan direction when the stage device 3X is lighter than the stage device 3Y, when the stage device 3X is smaller than the stage device 3Y, and / or when the force required to move the stage device 3X (for example, to move the X mover 32X and the X stage 33X) is smaller than the force required to move the stage device 3Y (for example, to move the Y mover 32Y and the Y stage 33Y). For example, the processing system SYSi may determine the Y-axis direction as the scan direction when the stage device 3Y is lighter than the stage device 3X, when the stage device 3Y is smaller than the stage device 3X, and / or when the force required to move the stage device 3Y is smaller than the force required to move the stage device 3X. In the example shown in FIG. 45, since the stage device 3X moves the workpiece S along the X-axis via the stage device 3Y, the stage device 3X needs to move the stage device 3Y as well in order to move the workpiece S. On the other hand, because stage device 3Y moves the workpiece S along the Y-axis without using stage device 3X, stage device 3Y does not need to move stage device 3X in order to move the workpiece S. Therefore, in the example shown in Fig. 45, it is highly likely that the force required to move stage device 3Y is usually smaller than the force required to move stage device 3X. Note that even if the size of the workpiece S is large (for example, the same size as the above-mentioned aircraft), the workpiece S may be moved according to the example shown in Fig. 45.

[0243] It can be said that the galvanometer mirror 113, the drive system 12, and the stage device 3 are all devices for scanning the processing light ELk on the workpiece S. In other words, it can be said that the galvanometer mirror 113, the drive system 12, and the stage device 3 are all devices for moving the target irradiation area EA on the surface of the coating film SF. For this reason, it can also be said that the processing system SYSi determines the scan direction based on the characteristics of a movable device that moves (i.e., physically moves) to scan the processing light ELk on the workpiece S. In this case, for example, when a first movable device that moves to scan the processing light ELk on the workpiece S along one of the X-axis and the Y-axis is lighter than a second movable device that moves to scan the processing light ELk on the workpiece S along the other of the X-axis and the Y-axis, the processing system SYSi may determine the scan direction to be one of the X-axis and the Y-axis. For example, the processing system SYSi may determine either the X-axis or the Y-axis as the scan direction when a force required to move a first movable device movable to scan the processing light ELk on the workpiece S along either the X-axis or the Y-axis is smaller than a force required to move a second movable device movable to scan the processing light ELk on the workpiece S along the other of the X-axis or the Y-axis. For example, the processing system SYSi may determine either the X-axis or the Y-axis as the scan direction when a force required to move a first movable device movable to scan the processing light ELk on the workpiece S along either the X-axis or the Y-axis is smaller than a force required to move a second movable device movable to scan the processing light ELk on the workpiece S along the other of the X-axis or the Y-axis.

[0244] Further, any processing system that processes the workpiece S to form a riblet structure, not limited to the processing system SYSi equipped with the multi-beam optical system 112, may align the scan direction with the concave structure CP1. Similarly, any processing system that processes the workpiece S to form a riblet structure may determine the scan direction based on the characteristics of a movable device that moves to scan the processing light ELk on the workpiece S. In other words, the processing system SYSi may not be equipped with the multi-beam optical system 112. In this case, as described in the third embodiment, the processing system SYSi may be equipped with multiple light sources 110 to irradiate multiple processing light ELk to the coating film SF.

[0245] The processing system SYSi of the ninth embodiment may have components specific to at least one of the processing systems SYSb of the second embodiment to SYSh of the eighth embodiment described above. The components specific to the processing system SYSg of the seventh embodiment include components related to the multi-beam optical system 112g. The components specific to the processing system SYSg of the eighth embodiment include components related to the multi-beam optical system 112h.

[0246] (10) Machining system SYSj of the tenth embodiment Next, a machining system SYS of a tenth embodiment (hereinafter, the machining system SYS of the tenth embodiment will be referred to as a "machining system SYSj") will be described.

[0247] (10-1) Structure of the machining system SYSj First, the structure of the processing system SYSj of the tenth embodiment will be described. The processing system SYSj of the tenth embodiment is different from the processing system SYSa described above in that it includes a light irradiation device 11j instead of the light irradiation device 11. Other features of the processing system SYSj of the tenth embodiment may be the same as other features of the processing system SYSa described above. Therefore, hereinafter, the light irradiation device 11j of the tenth embodiment will be described with reference to FIG. 46. FIG. 46 is a perspective view showing the structure of the light irradiation device 11j of the tenth embodiment.

[0248] 46, the light irradiation device 11j is different from the above-described light irradiation device 11 in that the light irradiation device 11j further includes a magnifying optical system 1181j. Other features of the optical system 112b may be the same as other features of the optical system 112.

[0249] The magnifying optical system 1181j is disposed on the optical path of the multiple processing light beams ELk. For this reason, in the tenth embodiment, the processing system SYSj irradiates the multiple processing light beams ELk onto the coating film SF via the magnifying optical system 1181j. Fig. 46 shows an example in which the magnifying optical system 1181j is disposed on the optical path of the multiple processing light beams ELk between the multi-beam optical system 112 and the galvanometer mirror 113. However, the magnifying optical system 1181j may be disposed at a position different from the position shown in Fig. 46.

[0250] The magnifying optical system 1181j has a characteristic that the characteristic of the processing light ELk irradiated to the coating film SF via the magnifying optical system 1181j is different from the characteristic of the processing light ELk irradiated to the coating film SF without passing through the magnifying optical system 1181j. More specifically, the magnifying optical system 1181j has a characteristic that the characteristic of the processing light ELk irradiated to the coating film SF via the magnifying optical system 1181j and the fθ lens 114 is different from the characteristic of the processing light ELk irradiated to the coating film SF via the fθ lens 114 but not via the magnifying optical system 1181j.

[0251] The characteristics of the processing light ELk changed by the magnifying optical system 1181j may include the size of the beam cross section of the processing light ELk at the convergence position (i.e., focus position) BF (see Figures 47(a) and 47(b) described later) where the processing light ELk is most convergent. The beam cross section of the processing light ELk means the beam cross section of the processing light ELk in a plane intersecting the traveling direction of the processing light ELk (i.e., a plane intersecting the optical axis of the optical system 112b). Since such a beam cross section is typically circular (including elliptical), hereinafter, the "beam diameter φ (see Figures 47(a) and 47(b) described later)" is used as an example of an index representing the size of the beam cross section. The beam diameter φ here may mean the diameter of an area where the intensity of the processing light ELk is equal to or greater than a predetermined threshold value in a plane intersecting the traveling direction of the processing light ELk (i.e., a plane intersecting the optical axis of the optical system 112b). In this case, the magnifying optical system 1181j has a characteristic that the beam diameter φ at the convergence position BF of the processing light ELk irradiated to the coating film SF via the magnifying optical system 1181j and the fθ lens 114 is different from the beam diameter φ at the convergence position BF of the processing light ELk irradiated to the coating film SF via the fθ lens 114 without passing through the magnifying optical system 1181j. Hereinafter, the beam diameter φ at the convergence position BF of the processing light ELk irradiated to the coating film SF via the magnifying optical system 1181j and the fθ lens 114 is referred to as the "beam diameter φa." In addition, the beam diameter φ at the convergence position BF of the processing light ELk irradiated to the coating film SF via the fθ lens 114 without passing through the magnifying optical system 1181j is referred to as the "beam diameter φb."

[0252] In particular, in the tenth embodiment, the magnifying optical system 1181j has a characteristic of making the beam diameter φa larger than the beam diameter φb. That is, the magnifying optical system 1181j has a characteristic of making the size of the beam cross section at the convergence position BF of the processing light ELk irradiated to the coating film SF via the magnifying optical system 1181j and the fθ lens 114 larger than the size of the beam cross section at the convergence position BF of the processing light ELk irradiated to the coating film SF via the fθ lens 114 without passing through the magnifying optical system 1181j. Specifically, as shown in FIG. 47(a), which is a cross-sectional view showing the cross section along the XZ plane of the processing light ELk irradiated to the coating film SF via the magnifying optical system 1181j in association with the cross section along the XY plane of the processing light ELk, the beam diameter φa is a first diameter φ1. 47(b), which is a cross-sectional view showing a cross section along the XZ plane of the processing light ELk irradiated onto the coating film SF without passing through the magnifying optical system 1181j in relation to a cross section along the XY plane of the processing light ELk, the beam diameter φb becomes a second diameter φ2 smaller than the first diameter φ1. In other words, the magnifying optical system 1181j can function as an optical system for expanding the beam diameter φ at the convergence position BF of the processing light ELk.

[0253] The characteristic of the processing light ELk changed by the magnifying optical system 1181j may include a rate of change of the beam diameter φ of the processing light ELk in the vicinity of the convergence position BF (particularly, a rate of change in a direction along the traveling direction of the processing light ELk). In other words, the characteristic of the processing light ELk changed by the magnifying optical system 1181j may include a rate of change of the beam diameter φ of the processing light ELk in a direction along the traveling direction of the processing light ELk in a region corresponding to the vicinity of the convergence position BF. The region corresponding to the vicinity of the convergence position BF here may mean a region falling within the range of the depth of focus (DOF) of the optical system of the light irradiation device 11j (specifically, an optical system including the focus lens 111, the multi-beam optical system 112, the galvanometer mirror 113, the fθ lens 114, and the magnifying optical system 1181j). In other words, the area corresponding to the vicinity of the convergence position BF may mean an area irradiated with processing light ELk having an intensity distribution capable of processing the coating film SF when the coating film SF is placed within that area.

[0254] Particularly in the tenth embodiment, the magnifying optical system 1181j has a characteristic that the rate of change of the beam diameter φa is smaller than the rate of change of the beam diameter φb. Specifically, as shown in Fig. 47(a) and Fig. 47(b), the beam diameter φ of the processing light ELk changes so as to increase as it moves away from the convergence position BF along the traveling direction of the processing light ELk (the Z-axis direction in the example shown in Fig. 47(a) and Fig. 47(b). In this case, as shown in Fig. 47(a), the rate of change (in other words, the difference) of the beam diameter φa at a position a predetermined distance away from the convergence position BF with respect to the beam diameter φa at the convergence position BF becomes relatively small. On the other hand, as shown in Fig. 47(b), the rate of change (in other words, the difference) of the beam diameter φb at a position the same predetermined distance away from the convergence position BF with respect to the beam diameter φb at the convergence position BF becomes relatively large. In other words, the magnifying optical system 1181j can function as an optical system for reducing the rate of change of the beam diameter φ in the vicinity of the convergence position BF.

[0255] The processing system SYSj equipped with such a magnifying optical system 1181j has the technical effect of processing the coating film SF with a relatively coarse fineness using processing light ELk having a wavelength capable of processing the coating film SF with a relatively fine fineness. Hereinafter, the technical effect that can be obtained by the processing system SYSj of the tenth embodiment will be described with reference to Fig. 48(a) and Fig. 48(b). Fig. 48(a) is a cross-sectional view showing how a processing system of a comparative example not equipped with the magnifying optical system 1181j processes the coating film SF with a relatively coarse fineness using processing light ELk having a wavelength capable of processing the coating film SF with a relatively fine fineness. Fig. 48(b) is a cross-sectional view showing how a processing system SYSj of the tenth embodiment equipped with the magnifying optical system 1181j processes the coating film SF with a relatively coarse fineness using processing light ELk having a wavelength capable of processing the coating film SF with a relatively fine fineness.

[0256] The processing system of the comparative example not including the magnifying optical system 1181j irradiates the processing light ELk to the coating film SF without the magnifying optical system 1181j. Therefore, as shown in FIG. 25(a), the beam diameter φ (i.e., beam diameter φb) of the processing light ELk at the convergence position BF is a relatively small first diameter φ11. Usually, the focus lens 1121 adjusts the convergence position BF of the processing light ELk so that the convergence position BF is located on the surface of the coating film SF (or in the vicinity thereof). In this case, the beam diameter φ of the processing light ELk on the surface of the coating film SF is approximately the first diameter φ11. The smaller the beam diameter φ of the processing light ELk on the surface of the coating film SF, the finer the coating film SF can be processed. Then, in this case, it is difficult for the processing system of the comparative example to form a concave structure CP1 having a relatively wide width by irradiating the processing light ELk once (i.e., performing a single scanning operation). That is, the processing system of the comparative example has difficulty in forming a concave structure CP1 having a relatively wide width by irradiating one processing light ELk having a relatively small beam diameter φ on the surface of the coating film SF (i.e., one scanning operation). For this reason, the processing system of the comparative example needs to form a plurality of concave structures CP1 having a relatively narrow width so as to partially overlap each other in order to form a single concave structure CP1 having a relatively wide width (i.e., a concave structure CP1 having a relatively large arrangement pitch P1). That is, the processing system of the comparative example needs to use a plurality of processing lights ELk that are originally irradiated so as to simultaneously form a plurality of concave structures CP1 having a relatively narrow width, in order to form a single concave structure CP1 having a relatively wide width. As a result, the time required to process the coating film SF with a relatively coarse fineness may be relatively long (i.e., the throughput may deteriorate).

[0257] On the other hand, the beam diameter φ of the processing light ELk increases as it moves away from the convergence position BF along the traveling direction of the processing light ELk (the Z-axis direction in the example shown in FIG. 48(a) and FIG. 48(b)). Therefore, even in the processing system of the comparative example, if the drive system 12 moves the light irradiation device 11 along the Z-axis direction so that the coating film SF is located at a position DF away from the convergence position BF along the Z-axis direction as shown in FIG. 48(a), the beam diameter φ of the processing light ELk on the coating film SF becomes a second diameter φ12 (however, the second diameter φ12 is larger than the first diameter φ11) suitable for forming a concave structure CP1 having a relatively wide width. As a result, the processing system of the comparative example becomes able to form a concave structure CP1 having a relatively wide width by irradiating a single processing light ELk having a relatively large beam diameter φ on the surface of the coating film SF (i.e., one scanning operation). However, in this case, as shown in FIG. 48(a), the range of the focal depth capable of forming the concave structure CP1 having a relatively wide width becomes relatively narrow. Specifically, as shown in FIG. 48(a), the range of the focal depth capable of forming the concave structure CP1 having a relatively wide width is limited to a relatively narrow first range DOF#1. This is because, in the processing system in the comparative example, the change rate of the beam diameter φ of the processing light ELk in the vicinity of each of the convergence position BF and the position DF (particularly, the change rate in the direction along the traveling direction of the processing light ELk) is relatively large. Specifically, when the change rate of the beam diameter φ of the processing light ELk is relatively large, the amount of energy transferred from the processing light ELk to the coating film SF per unit time and / or per unit area is relatively greatly reduced when the coating film SF moves only a relatively small amount from the position DF in the direction away from the convergence position BF. As a result, the coating film SF cannot be evaporated by the processing light ELk. Furthermore, when the rate of change of the beam diameter φ of the processing light ELk is relatively large, the beam diameter φ of the processing light ELk on the surface of the coating film SF becomes relatively rapidly small even if the coating film SF moves a relatively small amount from the position DF in the direction toward the convergence position BF.As a result, the beam diameter φ of the processing light ELk on the surface of the coating film SF becomes so small that it becomes impossible to form a concave structure CP1 having a relatively wide width.

[0258] On the other hand, in the tenth embodiment, the processing light ELk is irradiated to the coating film SF via the magnifying optical system 1181j. Therefore, as shown in FIG. 48(b), the beam diameter φ (i.e., φa) at the convergence position BF of the processing light ELk irradiated by the processing system SYSj is larger than the beam diameter φ (i.e., the first diameter φ11 shown in FIG. 48(a)) at the convergence position BF of the processing light ELk irradiated by the processing system of the comparative example. For example, in the tenth embodiment, the beam diameter φ at the convergence position BF of the processing light ELk is expanded to a diameter φ12 suitable for forming a concave structure CP1 having a relatively wide width. In other words, the characteristic of the magnifying optical system 1181j is a desired characteristic that can expand the beam diameter φ at the convergence position BF of the processing light ELk to a diameter φ12 suitable for forming a concave structure CP1 having a relatively wide width.

[0259] Furthermore, in the tenth embodiment, since the processing light ELk is irradiated to the coating film SF via the magnifying optical system 1181j, the rate of change of the beam diameter φ in the vicinity of the convergence position BF is smaller than the rate of change of the beam diameter φ in the vicinity of the convergence position BF of the processing light ELk irradiated by the processing system of the comparative example. Therefore, in the tenth embodiment, the range of the focal depth capable of forming a concave structure CP1 having a relatively wide width is wider than that of the comparative example. Therefore, when the coating film SF moves in a direction away from the convergence position BF with the convergence position BF as the base point, the amount of energy transmitted from the processing light ELk to the coating film SF per unit time and / or per unit area only decreases relatively slowly (i.e., it does not decrease suddenly). As a result, the possibility that the processing light ELk will not be able to evaporate the coating film SF is relatively small. Therefore, as shown in FIG. 48(b), the range of focal depths in which a relatively wide concave structure CP1 can be formed extends to a second range DOF#2 which is wider than the first range DOF#1 in the comparative example.

[0260] In this way, the processing system SYSj of the tenth embodiment can process the coating film SF with a relatively coarse fineness by using the processing light ELk having a wavelength capable of processing the coating film SF with a relatively fine fineness. Furthermore, the processing system SYSj does not excessively narrow the range of the focal depth capable of forming the concave structure CP1 having a relatively wide width. Therefore, the resistance to the fluctuation of the relative position between the coating film SF and the light irradiation device 11j in the Z-axis direction is strengthened. In other words, even if the relative position between the coating film SF and the light irradiation device 11j in the Z-axis direction fluctuates, the processing system SYSj is more likely to be able to properly process the coating film SF. Furthermore, the processing system SYSj can also enjoy the same effects as those that the processing system SYSa described above can enjoy.

[0261] (10-2) Specific examples of magnifying optical system 1181j Next, a specific example of the magnifying optical system 1181j will be described.

[0262] (10-2-1) First concrete example of the magnifying optical system 1181j The magnifying optical system 1181j may include a soft focus lens (i.e., a soft focus lens). The soft focus lens is an optical element capable of enlarging the beam diameter φ (i.e., beam diameter φa) of the processing light ELk at the convergence position BF through the optical system of the light irradiation device 11j including the soft focus lens as the magnifying optical system 1181j, compared to the beam diameter φ (i.e., beam diameter φb) of the processing light ELk at the convergence position BF through the optical system of the light irradiation device 11 that does not include the soft focus lens as the magnifying optical system 1181j. Furthermore, the soft focus lens is an optical element capable of widening the focal depth of the optical system of the light irradiation device 11j including the soft focus lens as the magnifying optical system 1181j, compared to the focal depth of the optical system of the light irradiation device 11 that does not include the soft focus lens as the magnifying optical system 1181j. Since the rate of change of the beam diameter φ of the processing light ELk in the vicinity of the convergence position BF decreases as the focal depth of the optical system of the light irradiation device 11 increases, it can be said that the soft focus lens is an optical element that can reduce the rate of change a of the beam diameter φ compared to the rate of change of the beam diameter φb. Therefore, the soft focus lens can function as the magnifying optical system 1181j.

[0263] The soft focus lens includes, for example, multiple lenses. The soft focus lens imparts longitudinal aberration (typically, spherical aberration) to the processing light ELk passing through the multiple lenses. The soft focus lens imparts longitudinal aberration (typically, spherical aberration) to the processing light ELk, thereby changing the characteristic 2 of the processing light ELk in the above-mentioned manner. Note that the soft focus lens is not limited to one that imparts spherical aberration to the processing light ELk.

[0264] (10-2-2) Second specific example of the magnifying optical system 1181j Considering that the soft focus lens imparts spherical aberration to the processing light ELk to change the characteristics of the processing light ELk in the above-mentioned manner, the magnifying optical system 1181j may include an aberration imparting optical element that imparts spherical aberration to the processing light ELk in addition to or instead of the soft focus lens. Alternatively, the aberration imparting optical element may impart aberration that is rotationally symmetric with respect to the optical axis of the optical system 112b (particularly, the optical axis of the magnifying optical system 1181j) to the processing light ELk in addition to or instead of the spherical aberration. In this case, the aberration imparting optical element imparts spherical aberration or aberration that is rotationally symmetric with respect to the optical axis of the optical system of the light irradiation device 11j (particularly, the optical axis of the magnifying optical system 1181j) to the processing light ELk, thereby changing the characteristics of the processing light ELk in the above-mentioned manner. For this reason, the characteristics of the aberration-imparting optical element (particularly, the characteristics related to imparting aberration to the processing light ELk) are set to desired characteristics that enable the characteristics of the processing light ELk irradiated to the coating film SF via the magnifying optical system 1181j including the aberration-imparting optical element to be different from the characteristics of the processing light ELk irradiated to the coating film SF without passing through the magnifying optical system 1181j including the aberration-imparting optical element.

[0265] (10-2-3) Third specific example of the magnifying optical system 1181j The magnifying optical system 1181j may include a rough optical element in addition to or instead of at least one of the soft focus lens and the aberration imparting optical element. The rough optical element may be an optical element having at least a part of its surface roughened. The rough optical element may be an optical element having at least a part of its surface formed as a scattering surface capable of scattering light. The rough optical element may be an optical element having minute irregularities formed on its surface. An example of such a rough optical element is at least one of ground glass, matte glass, opal glass, and lemon skin plate. The lemon skin plate is made by treating ground glass with acid to smooth out its irregularities.

[0266] The rough optical element substantially diffuses the processing light ELk incident on the rough optical element via a surface that is rough, scattering, and / or has irregularities. The rough optical element changes the characteristics of the processing light ELk in the manner described above by diffusing the processing light ELk. For this reason, the characteristics of the rough optical element (particularly, the characteristics related to the diffusion of the processing light ELk) are set to desired characteristics that can make the characteristics of the processing light ELk irradiated to the coating film SF via the magnifying optical system 1181j including the rough optical element different from the characteristics of the processing light ELk irradiated to the coating film SF without passing through the magnifying optical system 1181j including the rough optical element.

[0267] (10-2-4) Fourth specific example of the magnifying optical system 1181j Considering that the rough optical element diffuses the processing light ELk to change the characteristics of the processing light ELk in the above-mentioned manner, the magnifying optical system 1181j may include a diffusing optical element capable of diffusing the processing light ELk in addition to or instead of at least one of the soft focus lens, the aberration imparting optical element, and the rough optical element. Examples of such a diffusing optical element include at least one of a diffusion plate, milky white resin, and Japanese paper.

[0268] The diffusing optical element diffuses the processing light ELk to change the characteristics of the processing light ELk in the above-mentioned manner. Therefore, the characteristics of the diffusing optical element (particularly, the characteristics related to the diffusion of the processing light ELk) are set to desired characteristics that can make the characteristics of the processing light ELk irradiated to the coating film SF via the magnifying optical system 1181j including the diffusing optical element different from the characteristics of the processing light ELk irradiated to the coating film SF without passing through the magnifying optical system 1181j including the diffusing optical element.

[0269] (10-3) Substitution of the magnifying optical system 1181j by the multi-beam optical system 112 As described above, the method of using a plurality of processing lights ELk, which are originally irradiated so as to simultaneously form a plurality of concave structures CP1 each having a relatively narrow width, to form a single concave structure CP1 having a relatively wide width leads to a deterioration in the throughput of the processing system SYSj. However, according to this method, the coating film SF can be processed with a relatively coarse fineness by using the processing light ELk having a wavelength capable of processing the coating film SF with a relatively fine fineness. In other words, the processing system SYSj may use a plurality of processing lights ELk, which are originally irradiated so as to simultaneously form a plurality of concave structures CP1 each having a relatively narrow width, to form a single concave structure CP1 having a relatively wide width.

[0270] In this case, the multi-beam optical system 112 may overlap a plurality of processing lights ELk. Specifically, as shown on the left side of FIG. 49, which is a cross-sectional view showing the overlapping of a plurality of processing lights ELk, the multi-beam optical system 112 overlaps a plurality of processing lights ELk (in the example shown in FIG. 49, processing lights ELk#1 to ELk#n). As a result, as shown on the right side of FIG. 49, the light irradiation device 11j (particularly the multi-beam optical system 112) emits processing light ELkj that can...

Claims

1. A polarizing beam splitter; a first return member that receives the first polarized light reflected by the polarizing beam splitter and returns the incident first polarized light to the polarizing beam splitter; a second return member into which the second polarized light transmitted through the polarizing beam splitter is incident and which returns the incident second polarized light to the polarizing beam splitter; Equipped with the first return member returns the incident first polarized light to the polarizing beam splitter in the same polarization state as the second polarized light incident on the polarizing beam splitter; The second return member returns the incident second polarized light to the polarizing beam splitter in the same polarization state as the first polarized light incident on the polarizing beam splitter. Polarized optics.

2. The first polarized light passing through the first return member and the polarizing beam splitter and the second polarized light passing through the second return member and the polarizing beam splitter are emitted from the polarizing beam splitter in an overlapping state. The polarizing optical system according to claim 1 .

3. The first polarized light passing through the first return member and the polarizing beam splitter, and the second polarized light passing through the second return member and the polarizing beam splitter are emitted from the polarizing beam splitter in the same direction. The polarizing optical system according to claim 1 .

4. the first return member includes a first mirror that reflects the first polarized light from the polarizing beam splitter back to the polarizing beam splitter; The second return member includes a second mirror that reflects the second polarized light from the polarizing beam splitter back to the polarizing beam splitter. The polarizing optical system according to claim 1 .

5. the first return member is disposed between the polarizing beam splitter and the first mirror, and includes a first polarization state changing member that changes the polarization state of the first polarized light incident on the polarizing beam splitter; The second return member is disposed between the polarizing beam splitter and the second mirror, and includes a second polarization state changing member that changes the polarization state of the second polarized light incident on the polarizing beam splitter. The polarizing optical system according to claim 4 .

6. The first return member includes a first mirror that reflects the first polarized light from the polarizing beam splitter and returns it to the polarizing beam splitter, and a first polarization state changing member that is disposed between the polarizing beam splitter and the first mirror and changes the polarization state of the first polarized light that is incident on the polarizing beam splitter. The polarizing optical system according to claim 1 .

7. The polarizing beam splitter further includes a wave plate on which the first and second polarized light beams emitted from the polarizing beam splitter are incident. The polarizing optical system according to claim 1 .

8. The wave plate is rotatable. The polarizing optical system according to claim 7 .

9. A polarization optical system according to any one of claims 1 to 8, into which processing light from a light source is incident, The processing light that has passed through the polarizing optical system is irradiated onto an object to process the object. Processing equipment.

10. The optical fiber further includes a branching optical system that branches the processing light that has passed through the polarizing optical system and irradiates different positions of the object with the branched processing light. The processing apparatus according to claim 9.

11. Incidentally, the light is incident on a polarizing beam splitter; The incident light is reflected by the polarizing beam splitter and emitted as a first polarized light; returning the first polarized light from the polarizing beam splitter back to the polarizing beam splitter; The incident light is transmitted through the polarizing beam splitter and emitted as a second polarized light; returning the second polarized light from the polarizing beam splitter back to the beam splitter; changing the polarization state of the first polarized light returned to the polarizing beam splitter to the same polarization state as the second polarized light incident on the polarizing beam splitter; The polarization state of the second polarized light returned to the polarizing beam splitter is made the same as the polarization state of the first polarized light incident on the polarizing beam splitter. The processing method includes the steps of:

12. The first polarized light emitted from the polarizing beam splitter and the second polarized light passing through the polarizing beam splitter are emitted from the polarizing beam splitter in an overlapping state. The processing method according to claim 11.

13. The first polarized light emitted from the polarizing beam splitter and the second polarized light emitted from the polarizing beam splitter are emitted in the same direction from the polarizing beam splitter. The processing method according to claim 11 or 12.

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