Light-emitting module and method of manufacturing the same

Abstract

To provide a light-emitting module with high productivity, and to provide a method of manufacturing the same.SOLUTION: A method of manufacturing a light-emitting module 1 includes a step of preparing an intermediary body 20. The intermediary body 20 comprises: a wiring board 10 with a metal layer 14; and a first conductive member 21 and a second conductive member 22 in contact with the metal layer 14. The method of manufacturing the light-emitting module 1 includes the steps of: arranging on the intermediary body 20 a resist layer 30 at least partially arranged between the first conductive member 21 and the second conductive member 22; arranging on the resist layer 30 a light-emitting element 40 including a first electrode 46 and a second electrode 47 arranged on a lower surface 41; forming on the metal layer 14 a first bonding material 51 in contact with the first conductive member 21 and the first electrode 46 and a second bonding material 52 separated from the first conductive member 21 and in contact with the second conductive member 22 and the second electrode 47; and removing the resist layer 30.SELECTED DRAWING: Figure 12A

Description

[Technical field]

[0001] SUMMARY OF THE DISCLOSURE The present invention relates to a light emitting module and a method for manufacturing the same. [Background technology]

[0002] In recent years, light emitting modules in which a large number of light emitting elements are mounted on a wiring board have been developed, and there is a demand for improved productivity in such light emitting modules. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 08-148531 Summary of the Invention [Problem to be solved by the invention]

[0004] An object of the embodiments of the present invention is to provide a light emitting module with high productivity and a method for manufacturing the same. [Means for solving the problem]

[0005] A method for manufacturing a light emitting module according to an embodiment of the present invention includes a step of preparing an intermediate body. The intermediate body includes a wiring board having an upper surface and a metal layer disposed on the upper surface, a first conductive member disposed on the metal layer and in contact with the metal layer, and a second conductive member disposed on the metal layer and spaced from the first conductive member and in contact with the metal layer. The method includes a step of arranging a resist layer on the intermediate body, at least a part of which is disposed between the first conductive member and the second conductive member. The method includes a step of arranging a light emitting element including a lower surface, a first electrode disposed on the lower surface, and a second electrode disposed on the lower surface, on the resist layer such that the lower surface faces the upper surface of the wiring board. The method includes a step of forming a first bonding member on the metal layer in contact with the first conductive member and the first electrode, and forming a second bonding member spaced from the first conductive member and in contact with the second conductive member and the second electrode. The method includes a step of removing the resist layer.

[0006] A light emitting module according to an embodiment of the present invention includes a wiring board, a first conductive member, a second conductive member, a first bonding member, a second bonding member, and a light emitting element. The wiring board has an upper surface, a first metal layer provided on the upper surface, and a second metal layer provided on the upper surface. The first conductive member is provided on the first metal layer and contacts the first metal layer. The second conductive member is provided on the second metal layer and contacts the second metal layer. The first bonding member is provided on the first metal layer, covers the first conductive member, and contacts the first metal layer and the first conductive member. The second bonding member is provided on the second metal layer, covers the second conductive member, and contacts the second metal layer and the second conductive member. The light emitting element has a lower surface, a first electrode provided on the lower surface and contacting the first bonding member, and a second electrode provided on the lower surface and contacting the second bonding member, and the lower surface faces the upper surface of the wiring board. Effect of the Invention

[0007] According to the embodiment of the present invention, a light emitting module with high productivity and a manufacturing method thereof can be realized. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a plan view showing a method for manufacturing a light emitting module according to an embodiment. [Figure 2A] FIG. 2A is an end view taken along line IIA-IIA shown in FIG. [Figure 2B] FIG. 2B is an end view taken along line IIB-IIB shown in FIG. [Figure 2C] FIG. 2C is an end view taken along line IIC-IIC shown in FIG. [Figure 2D] FIG. 2D is an end view taken along line IID-IID shown in FIG. [Diagram 3] FIG. 3 is a plan view showing a method for manufacturing the light emitting module according to the embodiment. [Figure 4A] FIG. 4A is an end view taken along line IVA-IVA shown in FIG. [Figure 4B] FIG. 4B is an end view taken along line IVB-IVB shown in FIG. [Figure 4C] FIG. 4C is an end view taken along line IVC-IVC shown in FIG. [Figure 4D] FIG. 4D is an end view taken along line IVD-IVD shown in FIG. [Diagram 5] FIG. 5 is a plan view showing a method for manufacturing the light emitting module according to the embodiment. [Figure 6A] FIG. 6A is an end view taken along line VIA-VIA shown in FIG. [Figure 6B] FIG. 6B is an end view taken along line VIB-VIB shown in FIG. [Figure 6C] FIG. 6C is an end view taken along line VIC-VIC shown in FIG. [Figure 6D] FIG. 6D is an end view taken along line VID-VID shown in FIG. [Figure 7] FIG. 7 is a plan view showing a method for manufacturing a light emitting module according to an embodiment. [Figure 8A] FIG. 8A is an end view taken along line VIIIA-VIIIA shown in FIG. [Figure 8B] FIG. 8B is an end view taken along line VIIIB-VIIIB shown in FIG. [Figure 8C] FIG. 8C is an end view taken along line VIIIC-VIIIC shown in FIG. [Figure 8D] FIG. 8D is an end view taken along line VIIID-VIIID shown in FIG. [Figure 9] FIG. 9 is a plan view showing a method for manufacturing a light emitting module according to an embodiment. [Figure 10A] FIG. 10A is an end view taken along line XA-XA shown in FIG. [Figure 10B] FIG. 10B is an end view taken along line XB-XB shown in FIG. [Figure 10C] FIG. 10C is an end view taken along line XC-XC shown in FIG. [Figure 10D] FIG. 10D is an end view taken along line XD-XD shown in FIG. [Figure 11] FIG. 11 is a plan view showing a method for manufacturing a light emitting module according to an embodiment. [Figure 12A] FIG. 12A is an end view taken along line XIIA-XIIA shown in FIG. [Figure 12B] FIG. 12B is an end view taken along line XIIB-XIIB shown in FIG. [Figure 12C] FIG. 12C is an end view taken along line XIIC-XIIC shown in FIG. [Figure 12D] FIG. 12D is an end view taken along line XIID-XIID shown in FIG. [Figure 13] FIG. 13 is a plan view showing a method for manufacturing the light emitting module according to the embodiment. [Figure 14A] FIG. 14A is an end view taken along line XIVA-XIVA shown in FIG. [Figure 14B] FIG. 14B is an end view taken along line XIVB-XIVB shown in FIG. [Figure 14C] FIG. 14C is an end view taken along line XIVC-XIVC shown in FIG. [Figure 14D]FIG. 14D is an end view taken along line XIVD-XIVD shown in FIG. [Figure 15] FIG. 15 is a plan view showing a method for manufacturing a light emitting module according to an embodiment. [Figure 16A] FIG. 16A is an end view taken along line XVIA-XVIA shown in FIG. [Figure 16B] FIG. 16B is an end view taken along line XVIB-XVIB shown in FIG. [Figure 16C] FIG. 16C is an end view taken along line XVIC-XVIC shown in FIG. [Figure 16D] FIG. 16D is an end view taken along line XVID-XVID shown in FIG. [Figure 17] FIG. 17 is a plan view showing a light emitting module according to an embodiment. [Figure 18] FIG. 18 is an end view taken along line XVIII-XVIII shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Note that each drawing is a schematic view, and is appropriately emphasized or simplified. Furthermore, the dimensional ratios of each component in the drawings are not necessarily consistent. First, a method for manufacturing the light emitting module according to this embodiment will be described. A method for manufacturing a light emitting module 1 according to this embodiment includes the steps of: preparing an intermediate body 20 including a wiring board 10 having an upper surface 16 and a metal layer 14 disposed on the upper surface 16, a first conductive member 21 disposed on the metal layer 14 and in contact with the metal layer 14, and a second conductive member 22 disposed on the metal layer 14 and separated from the first conductive member 21 and in contact with the metal layer 14; disposing a resist layer 30 on the intermediate body 20, at least a portion of which is disposed between the first conductive member 21 and the second conductive member 22; the step of forming a first bonding member 51 on the metal layer 14 in contact with the first conductive member 21 and the first electrode 46, and a second bonding member 52 spaced from the first conductive member 21 and in contact with the second conductive member 22 and the second electrode 47, and the step of removing the resist layer 30.

[0010] <Step of preparing intermediate> First, the wiring board 10 is prepared. FIG. 1 is a plan view showing a method for manufacturing a light emitting module according to an embodiment. FIG. 2A is an end view taken along line IIA-IIA shown in FIG. FIG. 2B is an end view taken along line IIB-IIB shown in FIG. FIG. 2C is an end view taken along line IIC-IIC shown in FIG. FIG. 2D is an end view taken along line IID-IID shown in FIG. FIG. 3 is a plan view showing a method for manufacturing the light emitting module according to the embodiment. FIG. 4A is an end view taken along line IVA-IVA shown in FIG. FIG. 4B is an end view taken along line IVB-IVB shown in FIG. FIG. 4C is an end view taken along line IVC-IVC shown in FIG. FIG. 4D is an end view taken along line IVD-IVD shown in FIG. 1 to 4D show a wiring board 10. However, in order to make the drawings easier to see, metal layer 14 is omitted in FIGS. 1 to 2D.

[0011] 1 to 4D, wiring board 10 has insulating base material 11, wiring 12, insulating film 13, and metal layer 14. Wiring board 10 is, for example, an ASIC (Application Specific Integrated Circuit) board.

[0012] The wiring 12 is arranged in multiple layers in the substrate 11. In addition, in Figs. 2A to 2D, only the wiring 12 in the top layer is shown, and the other wirings 12 are omitted. The same applies to other end views described later. The insulating film 13 is arranged on the upper surface of the substrate 11. The insulating film 13 is provided with a plurality of first openings 15 penetrating the insulating film 13. In a plan view, the first openings 15 are arranged, for example, in a matrix. The wiring 12 is exposed at the bottom of each first opening 15. The shape of each first opening 15 is not particularly limited, and is, for example, a circle, an ellipse, an oval, a rectangle with rounded corners, or a rectangle.

[0013] For ease of explanation, the present specification will hereinafter adopt an XYZ Cartesian coordinate system. The arrangement directions of the first openings 15 in the insulating film 13 are defined as the "X direction" and the "Y direction". The thickness direction of the wiring board 10 is defined as the "Z direction". In the present specification, the expression "in a plan view" refers to a view from the Z direction.

[0014] As shown in FIGS. 3 to 4D, the metal layer 14 is provided on the insulating film 13 and disposed on the upper surface 16 of the wiring board 10. The material of the metal layer 14 may be tungsten (W), copper (Cu), nickel (Ni), silver (Ag), gold (Au), palladium (Pd), platinum (Pt), or an alloy containing one of these metals. For example, it is preferable to use copper from the viewpoint of heat dissipation. The metal layer 14 is provided with a plurality of second openings 17 penetrating the metal layer 14. In a plan view, the second openings 17 are arranged in a matrix along the X direction and the Y direction, for example.

[0015] In a plan view, the shape of each second opening 17 in the metal layer 14 is, for example, a rectangle or a substantially rectangle with rounded corners. The length of each second opening 17 in the X direction is longer than its length in the Y direction. Each second opening 17 is disposed so as to face in the Y direction two first openings 15 adjacent to each other in the X direction.

[0016] In wiring board 10, second openings 17 of metal layer 14 are arranged apart from first openings 15 of insulating film 13 in plan view. More specifically, second openings 17 are not arranged between first openings 15 adjacent to each other in the X direction, and first openings 15 are not arranged between second openings 17 adjacent to each other in the X direction. Meanwhile, first openings 15 and second openings 17 are arranged alternately in the Y direction. That is, metal layer 14 collectively covers a plurality of first openings 15, and has a plurality of second openings 17 penetrating metal layer 14 at positions separated from first openings 15 in plan view.

[0017] Since first opening 15 and second opening 17 are separated from each other in a plan view, first opening 15 of insulating film 13 is covered with metal layer 14. Therefore, wiring 12 exposed from insulating film 13 at the bottom of first opening 15 is covered with metal layer 14 and is in contact with metal layer 14. On the other hand, at the bottom of second opening 17, insulating film 13, not wiring 12, is exposed.

[0018] Since the metal layer 14 covers the first opening 15 of the insulating film 13, the metal layer 14 has a recess reflecting the shape of the first opening 15 above the first opening 15. In this case, the wiring board 10 has a first recess 18 and a second recess 19 on the upper surface of the metal layer 14. Here, the second recess 19 is not arranged between the first recesses 18 adjacent to each other in the X direction, and the first recess 18 is not arranged between the second recesses 19 adjacent to each other in the X direction. On the other hand, the first recesses 18 and the second recesses 19 are arranged alternately in the Y direction.

[0019] That is, between a row of a plurality of first recesses 18 arranged along the X direction and a row of a plurality of second recesses 19 arranged along the X direction, a row of a plurality of second openings 17 arranged along the X direction is disposed. As a result, a row of first recesses 18, a row of second openings 17, a row of second recesses 19, and a row of second openings 17 are repeatedly arranged in this order along the Y direction. Note that, when the metal layer 14 is sufficiently thick compared to the insulating film 13, the first recesses 18 and the second recesses 19 may not be formed. For this reason, it is preferable that the metal layer 14 has a thickness sufficient to form the first recesses 18 and the second recesses 19. Specifically, the thickness of the metal layer 14 may be 0.10 to 0.30 μm, and the depth of the recesses of the first recesses 18 and the second recesses 19 is about 0.30 to 0.90 μm.

[0020] Next, the first conductive member 21 and the second conductive member 22 are disposed on the metal layer 14. FIG. 5 is a plan view showing a method for manufacturing the light emitting module according to the embodiment. FIG. 6A is an end view taken along line VIA-VIA shown in FIG. FIG. 6B is an end view taken along line VIB-VIB shown in FIG. FIG. 6C is an end view taken along line VIC-VIC shown in FIG. FIG. 6D is an end view taken along line VID-VID shown in FIG. 5 to 6D show an intermediate body 20. FIG.

[0021] As shown in Figs. 5 to 6D, the first conductive member 21 is disposed in the first recess 18 in the metal layer 14, and the second conductive member 22 is disposed in the second recess 19. The material of the first conductive member 21 and the second conductive member 22 may be, for example, tungsten (W), copper (Cu), nickel (Ni), silver (Ag), gold (Au), palladium (Pd), platinum (Pt), or an alloy containing one of these metals. Among them, it is preferable to use copper (Cu) from the viewpoint of heat dissipation. In one example, the first conductive member 21 and the second conductive member 22 may be formed by electrolytic plating, electroless plating, sputtering, vapor deposition, or the like.

[0022] Each of the first conductive members 21 and each of the second conductive members 22 has a shape of a column, for example, such as a circular cylinder, an elliptical cylinder, an oblong cylinder, a substantially square prism with rounded corners, or a square prism. In plan view, the first conductive member 21 is preferably disposed so as to be contained within the first recess 18, and the outer edge of the first conductive member 21 is preferably the same as the outer edge of the bottom of the first recess 18 or slightly smaller than the outer edge of the bottom of the first recess 18. Similarly, in plan view, the second conductive member 22 is preferably disposed so as to be contained within the second recess 19, and the outer shape of the second conductive member 22 is preferably the same as the outer edge of the bottom of the second recess 19 or slightly smaller than the outer edge of the bottom of the second recess 19.

[0023] The thickness of the first conductive member 21, i.e., the length in the Z direction, is preferably greater than the depth of the first recess 18. Similarly, the thickness of the second conductive member 22, i.e., the length in the Z direction, is preferably greater than the depth of the second recess 19. As a result, the upper ends of the first conductive member 21 and the second conductive member 22 are positioned above the upper surface of the metal layer 14. Specifically, the thickness of the first conductive member 21 and the second conductive member 22 is, for example, 1.5 μm to 2.5 μm.

[0024] In this manner, the intermediate body 20 is prepared. The intermediate body 20 includes the wiring board 10, a first conductive member 21 disposed on the metal layer 14 of the wiring board 10 and in contact with the metal layer 14, and a second conductive member 22 disposed on the metal layer 14 and separated from the first conductive member 21 and in contact with the metal layer 14. The intermediate body 20 may be prepared by manufacturing, or may be prepared by obtaining it from an outside source, for example by purchasing. When manufacturing the intermediate body 20, it may be manufactured by the above-mentioned method, but it may also be manufactured by another method.

[0025] <Step of disposing resist layer> Next, a resist layer 30 is disposed on the intermediate body 20, at least a portion of which is disposed between the first conductive member 21 and the second conductive member 22. FIG. 7 is a plan view showing a method for manufacturing a light emitting module according to an embodiment. FIG. 8A is an end view taken along line VIIIA-VIIIA shown in FIG. FIG. 8B is an end view taken along line VIIIB-VIIIB shown in FIG. FIG. 8C is an end view taken along line VIIIC-VIIIC shown in FIG. FIG. 8D is an end view taken along line VIIID-VIIID shown in FIG.

[0026] The resist layer 30 is formed by, for example, a photolithography method. As shown in FIG. 7 to FIG. 8D, in a plan view, the resist layer 30 has a lattice shape having a first portion 31 extending in the X direction, a second portion 32 extending in the Y direction, and a third portion 33 extending in the Y direction. The first portion 31 is disposed so as to pass through every other area directly above the second openings 17 arranged in the Y direction. Therefore, the first portion 31 is disposed between the first conductive member 21 and the second conductive member 22 in the Y direction. The thickness of the resist layer 30 is preferably larger than the distance from the upper surface of the metal layer 14 surrounding the first recess 18 and the second recess 19 to the upper ends of the first conductive member 21 and the second conductive member 22. The thickness of the resist layer 30 is preferably 1.4 to 2.6 times the thickness of the first conductive member 21 and the second conductive member 22. For example, the thickness may be 3.5 μm to 4.0 μm.

[0027] The second portions 32 and the third portions 33 are alternately arranged along the X direction. The second portions 32 are arranged so as to pass between two second openings 17 adjacent to each other in the X direction in a plan view and overlap both ends of the second openings 17 in the X direction. The third portions 33 are arranged so as to pass through the centers of the second openings 17 in the X direction in a plan view.

[0028] As a result, each of the first conductive members 21 and each of the second conductive members 22 is surrounded by the resist layer 30 and the second openings 17 of the metal layer 14 in a plan view. That is, each of the first conductive members 21 and the second conductive members 22 is surrounded on three sides, i.e., both sides in the X direction and one side in the Y direction, by the resist layer 30. The remaining side of each of the first conductive members 21 and the second conductive members 22, i.e., the other side in the Y direction, is not surrounded by the resist layer 30, and the second openings 17 are disposed thereon.

[0029] <Step of arranging light emitting element on resist layer> Next, the light emitting element 40 is disposed on the resist layer 30 . FIG. 9 is a plan view showing a method for manufacturing a light emitting module according to an embodiment. FIG. 10A is an end view taken along line XA-XA shown in FIG. FIG. 10B is an end view taken along line XB-XB shown in FIG. FIG. 10C is an end view taken along line XC-XC shown in FIG. FIG. 10D is an end view taken along line XD-XD shown in FIG.

[0030] The light emitting element 40 is, for example, a light emitting diode (LED). The shape of the light emitting element 40 is not particularly limited, but may be, for example, a quadrangular pyramid trapezoid or a rectangular parallelepiped. When the shape of the light emitting element 40 is a quadrangular pyramid trapezoid or a rectangular parallelepiped, the light emitting element 40 has a lower surface 41, an upper surface 42 opposite to the lower surface 41, and four side surfaces 43 disposed between the lower surface 41 and the upper surface 42. The shape of the lower surface 41 is rectangular. The light emitting element 40 also includes a semiconductor laminate 45, a first electrode 46, and a second electrode 47. The first electrode 46 and the second electrode 47 are disposed on the lower surface 41 at a distance from each other. Here, the light emitting element 40 is a quadrangular pyramid trapezoid in which the upper surface 42 is larger than the lower surface 41.

[0031] The light emitting element 40 is disposed on the resist layer 30. At this time, the lower surface 41 of the light emitting element 40 is opposed to the upper surface 16 of the wiring board 10. The light emitting element 40 is separated from the wiring board 10 by the resist layer 30 and disposed facing the wiring board 10. The light emitting element 40 is disposed on the resist layer 30 such that the first electrode 46 faces the first conductive member 21 and the second electrode 47 faces the second conductive member 22, respectively.

[0032] The light emitting element 40 is disposed at each intersection of the first portion 31 and the third portion 33 of the resist layer 30. As a result, the center of the light emitting element 40 in the Y direction contacts the first portion 31 of the resist layer 30. The center of the light emitting element 40 in the X direction contacts the third portion 33 of the resist layer 30. That is, the light emitting element 40 is supported by at least the first portion 31 and the third portion 33 of the resist layer 30. In this way, the light emitting element 40 is preferably disposed on the resist layer 30 such that the center of the lower surface 41 is located on the region where the first portion 31 and the third portion 33 of the resist layer 30 intersect. This allows the light emitting element 40 to be stably held.

[0033] In addition, it is preferable that both ends in the X direction of the light emitting element 40, i.e., two opposing sides 41a of the outer edge of the lower surface 41 of the light emitting element 40, contact the second portion 32 of the resist layer 30. As a result, both ends in the X direction of the light emitting element 40 are also supported by the second portion 32 of the resist layer 30, and the light emitting element 40 can be held more stably.

[0034] <Step of forming first and second bonding members> Next, the first bonding member 51 and the second bonding member 52 are formed on the metal layer 14. FIG. 11 is a plan view showing a method for manufacturing a light emitting module according to an embodiment. FIG. 12A is an end view taken along line XIIA-XIIA shown in FIG. FIG. 12B is an end view taken along line XIIB-XIIB shown in FIG. FIG. 12C is an end view taken along line XIIC-XIIC shown in FIG. FIG. 12D is an end view taken along line XIID-XIID shown in FIG.

[0035] As shown in FIG. 11 to FIG. 12D, the first bonding member 51 and the second bonding member 52 are formed on the metal layer 14. As the material of the first bonding member 51 and the second bonding member 52, tungsten (W), copper (Cu), nickel (Ni), silver (Ag), gold (Au), palladium (Pd), platinum (Pt), or an alloy containing one of these metals can be used. Among them, it is preferable to use copper from the viewpoint of heat dissipation, as with the first conductive member 21 and the second conductive member 22. The first bonding member 51 and the second bonding member 52 can be formed by, for example, an electrolytic plating method using a copper plating solution. When the first bonding member 51 and the second bonding member 52 are formed by an electrolytic plating method, the metal layer 14, the first conductive member 21, and the second conductive member 22 become seed layers for plating.

[0036] Specifically, the intermediate body on which the resist layer 30 and the light emitting element 40 are arranged is immersed in a plating layer containing a plating solution 101. As a result, the plating solution 101 is supplied to the metal layer 14 from above the light emitting element 40. The plating solution 101 mainly flows around the gap between two adjacent light emitting elements 40 in the Y direction, where the first portion 31 of the resist layer 30 is not arranged, to the lower side of the light emitting element 40, and flows toward both sides in the Y direction. Then, the plating solution 101 comes into contact with the metal layer 14, the first conductive member 21, and the second conductive member 22. As a result, the plating layer grows starting from the surface of the metal layer 14, the surface of the first conductive member 21, and the surface of the second conductive member 22.

[0037] As a result, a first bonding member 51 is formed near the portion of the metal layer 14 that contacts the first conductive member 21 and covering the first conductive member 21. In addition, a second bonding member 52 is formed near the portion of the metal layer 14 that contacts the second conductive member 22 and covering the second conductive member 22.

[0038] The first bonding member 51 reaches the first electrode 46 of the light-emitting element 40 and is in contact with the first electrode 46. The second bonding member 52 reaches the second electrode 47 of the light-emitting element 40 and is in contact with the second electrode 47. In this manner, the first bonding member 51 in contact with the first conductive member 21 and the first electrode 46 is formed on the metal layer 14, and the second bonding member 52 spaced apart from the first conductive member 21 and in contact with the second conductive member 22 and the second electrode 47 is formed.

[0039] In this process, the first bonding members 51 grow from the first conductive members 21 as starting points, and therefore can be formed efficiently in a short time. Similarly, the second bonding members 52 grow from the second conductive members 22 as starting points, and therefore can be formed efficiently in a short time.

[0040] In particular, since the upper end of the first conductive member 21 and the upper end of the second conductive member 22 are located above the upper surface of the metal layer 14, the first bonding member 51 and the second bonding member 52 formed on the upper end of the first conductive member 21 and the upper end of the second conductive member 22 are likely to reach the first electrode 46 and the second electrode 47 more quickly. In other words, since the intermediate body includes the first conductive member 21 and the second conductive member 22, recesses reflecting the shapes of the first recess 18 and the second recess 19 are not formed in the first bonding member 51 and the second bonding member 52. If the first bonding member 51 and the second bonding member 52 reach the first electrode 46 and the second electrode 47 while reflecting the recessed shape on the surface, cavities due to the recessed shape are formed at the interfaces between the first bonding member 51 and the first electrode 46 and between the second bonding member 52 and the second electrode 47, and there is a risk of a decrease in bonding strength, electrical characteristics, and heat dissipation.

[0041] Moreover, the first bonding member 51 and the second bonding member 52 are formed in a space surrounded on three sides by the resist layer 30 between the lower surface of the light emitting element 40 and the wiring board 10, respectively, and therefore their shapes can be easily controlled. In particular, since the first portion 31 of the resist layer 30 is disposed between the first bonding member 51 connected to the first electrode 46 of one light emitting element 40 and the second bonding member 52 connected to the second electrode 47, contact between the first bonding member 51 and the second bonding member 52 can be suppressed.

[0042] <Step of removing the resist layer> FIG. 13 is a plan view showing a method for manufacturing the light emitting module according to the embodiment. FIG. 14A is an end view taken along line XIVA-XIVA shown in FIG. FIG. 14B is an end view taken along line XIVB-XIVB shown in FIG. FIG. 14C is an end view taken along line XIVC-XIVC shown in FIG. FIG. 14D is an end view taken along line XIVD-XIVD shown in FIG.

[0043] 13 to 14D, the resist layer 30 is removed. For example, the wiring substrate 10 on which the first conductive member 21 and the second conductive member 22 are formed is immersed in a stripping liquid to remove the resist layer 30. This exposes the portions of the insulating film 13 and the metal layer 14 that were covered with the resist layer 30.

[0044] <Metal layer separation process> FIG. 15 is a plan view showing a method for manufacturing a light emitting module according to an embodiment. FIG. 16A is an end view taken along line XVIA-XVIA shown in FIG. FIG. 16B is an end view taken along line XVIB-XVIB shown in FIG. FIG. 16C is an end view taken along line XVIC-XVIC shown in FIG. FIG. 16D is an end view taken along line XVID-XVID shown in FIG.

[0045] Next, as shown in FIGS. 15 to 16D, the metal layer 14 is etched using the first bonding member 51 and the second bonding member 52 as a mask. The etching is, for example, wet etching. As a result, the metal layer 14 is selectively removed. That is, of the metal layer 14, the portions covered with the first bonding member 51 and the second bonding member 52 remain, and the other portions are removed. At this time, although a portion of the first bonding member 51 and the second bonding member 52 are also etched, the film thickness of the metal layer 14 is sufficiently small compared to the widths of the first bonding member 51 and the second bonding member 52 in the X direction and the Y direction, so that it is possible to selectively remove the metal layer 14 exposed from the first bonding member 51 and the second bonding member 52.

[0046] As a result, the metal layer 14 is separated into a first metal layer 14a in contact with the first conductive member 21 and the first bonding member 51, and a second metal layer 14b in contact with the second conductive member 22 and the second bonding member 52. The portion of the metal layer 14 located between the first metal layer 14a and the second metal layer 14b is removed by etching, so that the first metal layer 14a and the second metal layer 14b are separated from each other. As a result, the metal member consisting of the first metal layer 14a, the first conductive member 21, and the first bonding member 51 is separated from the metal member consisting of the second metal layer 14b, the second conductive member 22, and the second bonding member 52. In this manner, the light emitting module 1 according to this embodiment is manufactured.

[0047] <Metal film forming process> Furthermore, the manufacturing method of the light emitting module according to this embodiment may include a step of coating the surfaces of the first bonding member 51 and the second bonding member 52 with a metal film 60 by electroless plating after the step of separating the metal layer. By carrying out such plating treatment, the material (e.g., Cu) forming the first bonding member 51 and the second bonding member 52 can be coated so as not to be exposed to the outside. It is preferable that the metal film 60 to be formed uses gold (Au) on the outermost surface. Specifically, it may be a single layer film of Au, or a laminated film of a layer made of at least one of Ni, Ag, Pd, and Pt and a layer made of Au.

[0048] <Light emitting module> Next, the configuration of the light-emitting module 1 manufactured as described above will be described. FIG. 17 is a plan view showing a light emitting module according to an embodiment. FIG. 18 is an end view taken along line XVIII-XVIII shown in FIG.

[0049] 15 to 18, the light emitting module 1 according to the present embodiment includes a wiring board 10, a first conductive member 21, a second conductive member 22, a first joint member 51, a second joint member 52, and a light emitting element 40. The wiring board 10 and the light emitting element 40 are disposed apart from each other in the Z direction, and the first joint member 51 and the second joint member 52 are disposed between the wiring board 10 and the light emitting element 40. A space 100 is formed between the wiring board 10 and the light emitting element 40, between the first joint member 51, between the second joint member 52, and between the first joint member 51 and the second joint member 52. The space 100 contains, for example, air.

[0050] The wiring board 10 has a base material 11, wiring 12, an insulating film 13, a first metal layer 14a, and a second metal layer 14b. The wiring board 10 is, for example, an ASIC board. The base material 11 is, for example, a semiconductor base material containing silicon (Si) or the like, and a multilayer wiring 12 is provided in the base material 11. An insulating film 13 is provided on the base material 11. A first opening 15 is formed in the insulating film 13, and the wiring 12 is exposed at the bottom of the first opening 15. A first metal layer 14a and a second metal layer 14b are provided on an upper surface 16 of the wiring board 10 so as to be spaced apart from each other. Most of each of the first metal layer 14a and the second metal layer 14b is disposed within the first opening 15 of the insulating film 13, and a peripheral portion is disposed on the insulating film 13.

[0051] As a result, the first metal layer 14a and the second metal layer 14b are each connected to the wiring 12 exposed from the insulating film 13 at the first opening 15. A first recess 18 corresponding to the first opening 15 is provided in the first metal layer 14a, and a second recess 19 corresponding to the first opening 15 is provided in the second metal layer 14b.

[0052] The first conductive member 21 is provided on the first metal layer 14a and is in contact with the first metal layer 14a. The second conductive member 22 is provided on the second metal layer 14b and is in contact with the second metal layer 14b. In a plan view, the first conductive member 21 is contained in the first recess 18, and the second conductive member 22 is contained in the second recess 19. The thickness of the first conductive member 21 is preferably greater than the depth of the first recess 18, and the thickness of the second conductive member 22 is preferably greater than the depth of the second recess 19.

[0053] The first bonding member 51 is provided on the first metal layer 14a, covers the first conductive member 21, and is in contact with the first metal layer 14a and the first conductive member 21. The second bonding member 52 is provided on the second metal layer 14b, covers the second conductive member 22, and is in contact with the second metal layer 14b and the second conductive member 22. In other words, the lower surface of the first conductive member 21 is in contact with the first metal layer 14a, and the side and upper surfaces are covered by the first bonding member 51. The first conductive member 21 is not exposed from the first bonding member 51 and the first metal layer 14a. Similarly, the lower surface of the second conductive member 22 is in contact with the second metal layer 14b, and the side and upper surfaces are covered by the second bonding member 52. The second conductive member 22 is not exposed from the second bonding member 52 and the second metal layer 14b. Moreover, the first metal layer 14a is disposed only in the region directly below the first joint member 51, and the second metal layer 14b is disposed only in the region directly below the second joint member 52.

[0054] The light emitting element 40 is, for example, a light emitting diode, and its shape is, for example, a quadrangular pyramid or a rectangular parallelepiped. The light emitting element 40 has a lower surface 41, an upper surface 42, and four side surfaces 43 arranged between the lower surface 41 and the upper surface 42. The light emitting element 40 also includes a semiconductor laminate 45, a first electrode 46, and a second electrode 47. The first electrode 46 and the second electrode 47 are arranged on the lower surface 41 at a distance from each other. The lower surface 41 of the light emitting element 40 faces the upper surface 16 of the wiring board 10. The first electrode 46 of the light emitting element 40 is in contact with the first bonding member 51, and the second electrode 47 is in contact with the second bonding member 52.

[0055] In the light-emitting module 1 according to the present embodiment, a plurality of light-emitting elements 40 are mounted on one wiring board 10. The plurality of light-emitting elements 40 are arranged in a matrix along the X direction and the Y direction. A gap exists between adjacent light-emitting elements 40 in the X direction and the Y direction. Two first bonding members 51 are connected to the first electrode 46 of each light-emitting element 40, and two second bonding members 52 are connected to the second electrode 47. The two first bonding members 51 connected to one light-emitting element 40 are arranged in the X direction, the two second bonding members 52 connected to one light-emitting element 40 are also arranged in the X direction, and the first bonding member 51 and the second bonding member 52 connected to one light-emitting element 40 are arranged in the Y direction.

[0056] <Effects> Next, the effects of this embodiment will be described. In this embodiment, a lattice-shaped resist layer 30 is formed in the steps shown in Figures 7 to 8D, and the light-emitting elements 40 are arranged on the resist layer 30 in the steps shown in Figures 9 to 10D. This makes it possible to make the distance between the wiring board 10 and the light-emitting elements 40 uniform, and also makes it easier to position the light-emitting elements 40.

[0057] 11 to 12D, the first bonding members 51 and the second bonding members 52 are formed while the light emitting elements 40 are placed on the resist layer 30. Furthermore, since the first bonding members 51 and the second bonding members 52 can be grown using the first conductive members 21 and the second conductive members 22 as starting points, the first bonding members 51 and the second bonding members 52 that bond each of the multiple light emitting elements 40 to the wiring board 10 can be efficiently formed.

[0058] At this time, the light emitting element 40 can be reliably held by supporting the center portion in the Y direction of the light emitting element 40 by the first portion 31 of the resist layer 30 and supporting the center portion in the X direction of the light emitting element 40 by the third portion 33 of the resist layer 30. Furthermore, the light emitting element 40 can be more reliably held by supporting both ends in the X direction of the light emitting element 40 by the second portion 32 of the resist layer 30. Meanwhile, by not providing the resist layer 30 below both ends in the Y direction of the light emitting element 40, the plating liquid 101 can reach the first conductive member 21 and the second conductive member 22.

[0059] Furthermore, since the first bonding member 51 and the second bonding member 52 are each formed in a space surrounded on three sides by the resist layer 30, it is easy to control the shapes of the first bonding member 51 and the second bonding member 52 in the X direction and Y direction.

[0060] Furthermore, since the first portion 31 of the resist layer 30 is disposed between the first bonding member 51 connected to the first electrode 46 of one light-emitting element 40 and the second bonding member 52 connected to the second electrode 47, a short circuit between the first bonding member 51 and the second bonding member 52 can be suppressed.

[0061] In this way, according to the present embodiment, the light emitting module 1 can be manufactured with good productivity. Furthermore, since the variation in shape of each part can be suppressed in the manufactured light emitting module 1, cavities are less likely to occur in the joints between the first and second joint members 51 and 52 and the light emitting element 40, in particular, a more reliable light emitting module 1 can be obtained.

[0062] The positional relationship between the wiring board 10 and the light emitting elements 40 is not limited to the above example. For example, the arrangement of the light emitting elements 40 is not limited to a matrix, and may be, for example, a staggered or hexagonal close-packed arrangement. The first electrode 46 of each light emitting element 40 may be connected to one first bonding member 51, or may be connected to three or more first bonding members 51. Furthermore, each light emitting element 40 may be provided with a plurality of first electrodes 46, each of which may be connected to a different first bonding member 51. The same applies to the second electrode 47 and the second bonding member 52.

[0063] In addition, a semiconductor light-emitting element capable of emitting light of any wavelength can be selected as the light-emitting element 40. As an example, a light-emitting element that emits blue light can be used as the light-emitting element 40, but the present invention is not limited thereto, and the light-emitting element 40 may be one that emits light of a color other than blue light. When a plurality of light-emitting elements 40 arranged at predetermined intervals are used in the light-emitting module 1, the light-emitting elements 40 may each emit light of the same color, or may emit light of different colors, such as red and green.

[0064] The semiconductor laminate 45 of the light emitting element 40 capable of emitting blue light is a nitride semiconductor (In x Al y Ga 1-x-y N, 0≦X, 0≦Y, X+Y≦1) can be used. In this case, the semiconductor laminate 45 includes an n-type semiconductor layer and a p-type semiconductor layer positioned to sandwich the light-emitting layer. An n-side electrode and a p-side electrode, which are electrodes, are electrically connected to the n-type semiconductor layer and the p-type semiconductor layer, respectively. In a plan view, the shape of the light-emitting element 40 is not limited to a rectangle, and may be a polygon such as a triangle or a hexagon.

[0065] Furthermore, a wavelength conversion member containing a phosphor may be provided on the light emitting element 40. As the phosphor, for example, a YAG phosphor (e.g., (Y,Lu,Gd)3(Al,Ga)5O 12:Ce, etc.), β-sialon phosphors that emit green light (for example, (Si,Al)3(O,N)4:Eu, etc.), fluoride phosphors that emit red light (for example, K2(Si,Ti,Ge)F6:Mn or K2(Si,Al)F6:Mn, etc.), nitride phosphors (for example, (Sr,Ca)AlSiN3:Eu, etc.), etc. The wavelength conversion member may contain a single type of phosphor or may contain multiple phosphors.

[0066] Furthermore, a light-shielding member may be provided between the light-emitting elements 40. The light-shielding member is provided so as to surround the light-emitting element 40 and cover the side surface of the light-emitting element 40. The light-shielding member is a member that blocks the propagation of light between adjacent light-emitting elements. In addition, the light-shielding member is preferably also disposed between the light-emitting element 40 and the wiring board 10, specifically, it is preferably disposed in the region where the above-mentioned resist layer was disposed. The light-shielding member is, for example, a resin containing a light-reflecting material. As the light-reflecting material, for example, titanium oxide, aluminum oxide, zinc oxide, barium carbonate, barium sulfate, boron nitride, aluminum nitride, glass filler, etc. can be preferably used, and as the resin, for example, a silicone resin can be preferably used.

[0067] The above-described embodiment is an example of implementing the present invention, and the present invention is not limited to this embodiment. For example, the present invention also includes the above-described embodiment in which some components or steps are added, deleted, or changed. [Industrial Applicability]

[0068] The present invention can be used, for example, in vehicle headlights or display devices. [Explanation of symbols]

[0069] 1: Light emitting module 10: Wiring board 11: Base material 12: Wiring 13: Insulating film 14: Metal layer 14a: 1st metal layer 14b: Second metal layer 15: First opening 16:Top surface 17: Second opening 18: First recess 19: Second recess 20: Intermediate 21: First conductive member 22: Second conductive member 30: Resist layer 31: Part 1 32:Second part 33: 3rd part 40: Light emitting element 41: Bottom surface 41a: Side 42:Top surface 43: Side 45: Semiconductor laminate 46: 1st electrode 47:Second electrode 51: First joining member 52: Second joining member 60: Metal film 100: Space 101: Plating solution

Claims

1. preparing an intermediate body including a wiring board having an upper surface and a metal layer disposed on the upper surface, a first conductive member disposed on the metal layer and in contact with the metal layer, and a second conductive member disposed on the metal layer and spaced apart from the first conductive member and in contact with the metal layer; disposing a resist layer on the intermediate body, at least a portion of which is disposed between the first conductive member and the second conductive member; a step of disposing a light emitting element including a lower surface, a first electrode disposed on the lower surface, and a second electrode disposed on the lower surface on the resist layer such that the lower surface faces the upper surface of the wiring substrate; forming a first bonding member on the metal layer in contact with the first conductive member and the first electrode, and forming a second bonding member spaced apart from the first conductive member in contact with the second conductive member and the second electrode; removing the resist layer; A method for manufacturing a light emitting module comprising:

2. After the step of removing the resist layer, a step of selectively removing the metal layer using the first bonding member and the second bonding member as a mask, thereby separating the metal layer into a first metal layer in contact with the first conductive member and the first bonding member and a second metal layer in contact with the second conductive member and the second bonding member; The method for manufacturing a light emitting module according to claim 1 , further comprising:

3. The method for manufacturing a light emitting module according to claim 1 , wherein the first and second bonding members are formed by electrolytic plating.

4. The step of preparing the intermediate comprises: preparing the wiring substrate; disposing the first conductive member and the second conductive member on the metal layer; The method for manufacturing a light-emitting module according to any one of claims 1 to 3, comprising the steps of:

5. The method for manufacturing a light emitting module according to claim 4 , wherein the first conductive member and the second conductive member are formed by a plating method, a sputtering method, or a vapor deposition method.

6. The lower surface of the light-emitting element is rectangular, 6. The method for manufacturing a light-emitting module according to claim 1, wherein in the step of arranging the light-emitting element, two opposing sides of the outer edge of the lower surface of the light-emitting element contact the resist layer.

7. In the step of preparing the intermediate, the wiring substrate has a first recess and a second recess on an upper surface of the metal layer; the first conductive member is disposed within the first recess; the second conductive member is disposed in the second recess; a thickness of the first conductive member is greater than a depth of the first recess; The method for manufacturing a light emitting module according to any one of claims 1 to 6, wherein the thickness of the second conductive member is greater than the depth of the second recess.

8. a wiring substrate having an upper surface, a first metal layer provided on the upper surface, and a second metal layer provided on the upper surface; a first conductive member provided on the first metal layer and in contact with the first metal layer; a second conductive member provided on the second metal layer and in contact with the second metal layer; a first bonding member provided on the first metal layer, covering the first conductive member, and in contact with the first metal layer and the first conductive member; a second bonding member provided on the second metal layer, covering the second conductive member, and in contact with the second metal layer and the second conductive member; a light emitting element having a lower surface, a first electrode provided on the lower surface and in contact with the first bonding member, and a second electrode provided on the lower surface and in contact with the second bonding member, the lower surface facing an upper surface of the wiring substrate; A light emitting module comprising:

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