Multilayer electronic component

Abstract

To cancel acoustic noise applied to a multilayer electronic component and a cover part of the multilayer electronic component to improve the reliability and life of the multilayer electronic component.SOLUTION: A multilayer electronic component according to an embodiment of the invention includes: a body 110 including a capacitance formation portion Ac having a dielectric layer 111 and internal electrodes 121, 122 alternately disposed with the dielectric layer in a first direction, and cover portions 112, 113 disposed on both end surfaces of the capacitance formation portion in the first direction; and an external electrode disposed on the body. Each cover portion contains a barium titanate (BaTiO3)-based material as a main component, and a piezoelectric ceramic material excluding the barium titanate (BaTiO3)-based material as a sub component.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to a multilayer electronic component. [Background technology]

[0002] Multi-Layer Ceramic Capacitor (MLCC), one of the multi-layer electronic components, is a chip-type capacitor that is mounted on the printed circuit boards of various electronic products such as visual devices such as liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smartphones, and mobile phones, and serves to charge and discharge electricity.

[0003] Such multilayer ceramic capacitors have the advantages of being small yet high capacitance and easy to mount, and can be used as components of various electronic devices. As various electronic devices such as computers and mobile devices become smaller and have higher output, there is an increasing demand for multilayer ceramic capacitors to be smaller and have higher capacitance.

[0004] More specifically, as the demand for miniaturized and integrated IT electronic devices increases, the acoustic noise-related requirements for these devices are also becoming stricter, resulting in a need for products with improved acoustic noise characteristics.

[0005] When existing MLCCs are continuously exposed to acoustic noise generated when high frequency is applied and they are in operation, it may have side effects on adjacent circuits and devices or may cause unstable electrical signal transmission. In addition, the continuous generation of acoustic noise may deform the MLCC itself, reducing its reliability and durability, which may cause noise problems for users of devices that contain the MLCCs. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] JP 2020-141091 A Summary of the Invention [Problem to be solved by the invention]

[0007] One of the problems that the present invention aims to solve is to cancel out acoustic noise that is applied to a multilayer electronic component.

[0008] One of the problems that the present invention aims to solve is to cancel out acoustic noise that is applied to the cover portion.

[0009] One of the problems that the present invention aims to solve is to improve the reliability and life span of multilayer electronic components.

[0010] However, some of the problems that the present invention aims to solve are not limited to the above-mentioned contents, and can be more easily understood in the course of describing specific embodiments of the present invention. [Means for solving the problem]

[0011] A multilayer electronic component according to one embodiment of the present invention includes a body including a capacitance forming portion including dielectric layers and internal electrodes arranged alternately with the dielectric layers in a first direction, and a cover portion arranged on both end faces of the capacitance forming portion in the first direction, and an external electrode arranged on the body, wherein the cover portion includes a barium titanate (BaTiO3)-based material as a main component and a piezoelectric ceramic material other than the barium titanate (BaTiO3)-based material as a secondary component. Effect of the Invention

[0012] One of the various advantages of the present invention is that it cancels out the acoustic noise of a multilayer electronic component.

[0013] One of the various advantages of the present invention is that it cancels out the acoustic noise of the cover.

[0014] One of the various advantages of the present invention is that it improves the reliability and life of multilayer electronic components.

[0015] However, the various and beneficial advantages and effects of the present invention are not limited to the above, and can be more easily understood in the course of describing specific embodiments of the present invention. [Brief description of the drawings]

[0016] [Figure 1] 1 is a schematic perspective view of a multilayer electronic component according to an embodiment of the present invention; [Diagram 2] 2 is a schematic cross-sectional view taken along line II' of FIG. 1. [Diagram 3] 2 is a schematic cross-sectional view taken along line II-II' in FIG. 1. [Figure 4] 3 is a schematic diagram showing the microstructure of an enlarged view of region P in FIG. 2. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0017] Hereinafter, the embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Furthermore, the embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Therefore, the shapes and sizes of elements in the drawings may be exaggerated for clearer explanation, and elements indicated by the same reference numerals in the drawings are the same elements.

[0018] In order to clearly explain the present invention in the drawings, parts that are not relevant to the explanation are omitted, and the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, so the present invention is not necessarily limited to those shown in the drawings. Components having the same function within the same concept will be described using the same reference numerals. Furthermore, throughout the specification, when a part is said to "include" a certain component, this does not mean that other components are excluded, but that the part may further include other components, unless otherwise specified.

[0019] In the drawings, the first direction can be defined as the stacking direction or thickness T direction, the second direction can be defined as the length L direction, and the third direction can be defined as the width W direction.

[0020] Multilayer Electronic Components FIG. 1 is a schematic perspective view of a multilayer electronic component according to one embodiment of the present invention, FIG. 2 is a schematic cross-sectional view taken along line I-I' in FIG. 1, FIG. 3 is a schematic cross-sectional view taken along line II-II' in FIG. 1, and FIG. 4 is a schematic view of the microstructure of an enlarged view of region P in FIG. 2.

[0021] A multilayer electronic component according to an embodiment of the present invention will be described in detail below with reference to Figures 1 to 4. Although a multilayer ceramic capacitor will be described as an example of a multilayer electronic component, the present invention can also be applied to various electronic products that use a dielectric composition, such as inductors, piezoelectric elements, varistors, thermistors, and the like.

[0022] A multilayer electronic component 100 according to one embodiment of the present invention includes a body 110 including a capacitance forming portion Ac including a dielectric layer 111 and internal electrodes 121, 122 arranged alternately with the dielectric layer 111 in a first direction, and cover portions 112, 113 arranged on both end surfaces of the capacitance forming portion Ac in the first direction, and external electrodes 131, 132 arranged on the body 110, and the cover portions 112, 113 include a barium titanate (BaTiO3)-based material as a main component and a piezoelectric ceramic material other than the barium titanate (BaTiO3)-based material as a secondary component.

[0023] The body 110 may be formed by alternately stacking dielectric layers 111 and internal electrodes 121, 122.

[0024] More specifically, the body 110 may include a capacitance forming portion Ac that is disposed inside the body 110 and includes first internal electrodes 121 and second internal electrodes 122 that are alternately arranged to face each other across the dielectric layer 111 to form a capacitance.

[0025] Although there is no particular limitation on the specific shape of the body 110, as shown in the figure, the body 110 may have a hexahedral shape or a shape similar thereto. Due to shrinkage of ceramic particles contained in the body 110 during the firing process, the body 110 may have a substantially hexahedral shape, although it is not a hexahedral shape with perfectly straight lines.

[0026] The main body 110 may have a first surface 1 and a second surface 2 facing each other in a first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in the second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3 and the fourth surface 44 and facing each other in the third direction.

[0027] The plurality of dielectric layers 111 forming the body 110 are in a sintered state, and the boundaries between adjacent dielectric layers 111 may be integrated to such an extent that they are difficult to see without using a scanning electron microscope (SEM).

[0028] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO3)-based materials can be used. For example, barium titanate-based materials, lead composite perovskite-based materials, or strontium titanate-based materials can be used. The barium titanate-based material can contain BaTiO3-based ceramic particles. Examples of the ceramic particles include BaTiO3, (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y )O3 (0 < y < 1), etc.

[0029] In addition, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to the particles such as barium titanate (BaTiO3) according to the purpose of the present invention as the raw material for forming the dielectric layer 111.

[0030] However, the dielectric layer 111 included in the capacitance forming portion Ac may not contain a piezoelectric ceramic material excluding the barium titanate (BaTiO3)-based substance described later, or may not contain dielectric crystal grains including a piezoelectric ceramic material formed by firing a piezoelectric ceramic material.

[0031] Here, the capacitance forming portion Ac not containing a piezoelectric ceramic material may mean that a piezoelectric ceramic material is not added to the dielectric slurry that becomes the ceramic sheet of the dielectric layer 111. Meanwhile, during the firing process, the piezoelectric ceramic material may diffuse from the cover portion dielectric sheet that becomes the cover portions 112 and 113 toward the center of the capacitance forming portion Ac, and the piezoelectric ceramic material may be detected in the region of the capacitance forming portion Ac near the interface with the cover portions 112 and 113, which may be due to the diffusion of the piezoelectric ceramic material from the cover portion dielectric sheet.

[0032] Here, the region of capacitance forming portion Ac near the interface with cover portions 112, 113 may refer to, for example, a region within 10 μm from the interface between capacitance forming portion Ac and cover portions 112, 113 toward the center of capacitance forming portion Ac. That is, the piezoelectric ceramic material may be contained in a region within 10 μm from each interface between capacitance forming portion Ac and cover portions 112, 113 toward the center of capacitance forming portion Ac, and the atomic percentage (at%) of the piezoelectric ceramic material in this region may be 5 at% or less, or the ratio of the number of dielectric crystal grains containing the piezoelectric ceramic material in this region may be 5% or less.

[0033] However, in areas of the capacitance forming portion Ac other than the interface with the cover portions 112, 113, for example, areas other than 10 μm from the interface between the capacitance forming portion Ac and the cover portions 112, 113 toward the center of the capacitance forming portion Ac, may not contain piezoelectric ceramic material or may not contain dielectric crystal grains containing piezoelectric ceramic material.

[0034] The above explanation can also be applied to the case where the multilayer electronic component 100 includes the side margin portions 114 and 115.

[0035] That is, piezoelectric ceramic material may be detected in the area of ​​the capacitance forming portion Ac near the interface with the side margin portions 114, 115, which may be due to diffusion of the piezoelectric ceramic material from the dielectric sheet for the side margin portions.

[0036] The region of the capacitance forming portion Ac near the interface with the side margin portions 114, 115 may refer to, for example, a region within 10 μm from the interface between the capacitance forming portion Ac and the side margin portions 114, 115 toward the center of the capacitance forming portion Ac. In other words, the piezoelectric ceramic material may be contained in a region within 10 μm from each interface between the capacitance forming portion Ac and the side margin portions 114, 115 toward the center of the capacitance forming portion Ac, and the atomic percentage (at%) of the piezoelectric ceramic material in this region may be 5 at% or less, or the ratio of the number of dielectric crystal grains containing the piezoelectric ceramic material in this region may be 5% or less.

[0037] However, in areas of the capacitance forming portion Ac other than the interface with the side portions 114, 115, for example, areas other than 10 μm from the interface between the capacitance forming portion Ac and the side margin portions 114, 115 toward the center of the capacitance forming portion Ac, may not contain piezoelectric ceramic material or may not contain dielectric crystal grains containing piezoelectric ceramic material.

[0038] The thickness td of the dielectric layer 111 does not need to be particularly limited.

[0039] However, in order to achieve a high capacity of the multilayer electronic component, the thickness of the dielectric layer 111 may be 3.0 μm or less, and in order to more easily achieve a small size and high capacity of the multilayer electronic component, the thickness of the dielectric layer 111 may be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0040] Here, the thickness td of the dielectric layer 111 may refer to the thickness td of the dielectric layer 111 disposed between the first internal electrode 121 and the second internal electrode 122.

[0041] Meanwhile, the thickness td of the dielectric layer 111 may refer to the size of the dielectric layer 111 in the first direction. Also, the thickness td of the dielectric layer 111 may refer to the average thickness td of the dielectric layer 111, or may refer to the average size of the dielectric layer 111 in the first direction.

[0042] The average size in the first direction of the dielectric layer 111 may be measured by scanning an image of a cross-section of the body 110 in the first and second directions using a scanning electron microscope (SEM) with a magnification of 10,000. More specifically, the average size in the first direction of one dielectric layer 111 may mean an average value calculated by measuring the size in the first direction of one dielectric layer 111 at 30 equally spaced points in the second direction in the scanned image. The 30 equally spaced points may be designated as the capacitance forming portion Ac. Furthermore, if the measurement of such an average value is extended to 10 dielectric layers 111 and the average value is measured, the average size in the first direction of the dielectric layer 111 may be further generalized.

[0043] The internal electrodes 121 and 122 may be laminated alternately with the dielectric layers 111 .

[0044] The internal electrodes 121, 122 may include a first internal electrode 121 and a second internal electrode 122, and the first internal electrode 121 and the second internal electrode 122 are alternately arranged to face each other across the dielectric layer 111 that constitutes the main body 110, and may be exposed to the third surface 3 and the fourth surface 4 of the main body 110, respectively.

[0045] More specifically, the first internal electrode 121 may be spaced apart from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 may be spaced apart from the third surface 3 and exposed through the fourth surface 4. A first external electrode 131 may be disposed on the third surface 3 of the body 110 and connected to the first internal electrode 121, and a second external electrode 132 may be disposed on the fourth surface 4 of the body 110 and connected to the second internal electrode 122.

[0046] That is, the first internal electrode 121 may be connected to the first external electrode 131 without being connected to the second external electrode 132, and the second internal electrode 122 may be connected to the second external electrode 132 without being connected to the first external electrode 131. In this case, the first internal electrode 121 and the second internal electrode 122 may be electrically isolated from each other by the dielectric layer 111 disposed therebetween.

[0047] Meanwhile, the body 110 may be formed by alternately stacking ceramic green sheets on which the first internal electrodes 121 are printed and ceramic green sheets on which the second internal electrodes 122 are printed, and then firing the stacked ceramic green sheets.

[0048] There is no particular limitation on the material forming the internal electrodes 121 and 122, and any material having excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 can include one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0049] The internal electrodes 121 and 122 may be formed by printing a conductive paste for internal electrodes, which contains at least one of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, on a ceramic green sheet. The method for printing the conductive paste for internal electrodes may be a screen printing method or a gravure printing method, but the present invention is not limited thereto.

[0050] On the other hand, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited.

[0051] However, in order to achieve a high capacity of the multilayer electronic component, the thickness of the internal electrodes 121, 122 may be 1.0 μm or less, and in order to more easily achieve a small size and high capacity of the multilayer electronic component, the thickness of the internal electrodes 121, 122 may be 0.6 μm or less, and more preferably 0.4 μm or less.

[0052] Here, the thickness te of the internal electrodes 121, 122 may refer to the size of the internal electrodes 121, 122 in the first direction. In addition, the thickness te of the internal electrodes 121, 122 may refer to the average thickness te of the internal electrodes 121, 122, or may refer to the average size of the internal electrodes 121, 122 in the first direction.

[0053] The average size in the first direction of the internal electrodes 121 and 122 may be measured by scanning an image of a cross-section of the body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000. More specifically, the average size in the first direction of one internal electrode may be an average value calculated by measuring the size in the first direction of one internal electrode at 30 equally spaced points in the second direction in the scanned image. The 30 equally spaced points may be designated as the capacitance forming portion Ac. Furthermore, if such an average value measurement is extended to 10 internal electrodes to measure the average value, the average size in the first direction of the internal electrodes may be further generalized.

[0054] Meanwhile, the body 110 may include cover portions 112 and 113 disposed on both end surfaces in the first direction of the capacitance forming portion Ac.

[0055] More specifically, the cover parts 112, 113 may include a first cover part 112 arranged on one side of the capacitance forming part Ac in the first direction, and a second cover part 113 arranged on the other side of the capacitance forming part Ac in the first direction.

[0056] Here, the first cover part 112 may be an upper cover part 112 arranged at the upper part of the capacitance forming part Ac in the first direction, and the second cover part 113 may be a lower cover part 113 arranged at the lower part of the capacitance forming part Ac in the second direction.

[0057] The upper cover part 112 and the lower cover part 113 may be formed by stacking a single dielectric layer 111 or two or more dielectric layers 111 in a first direction on the upper and lower surfaces of the capacitance forming part Ac, respectively, and may basically serve to prevent damage to the internal electrodes 121, 122 due to physical or chemical stress.

[0058] The upper cover part 112 and the lower cover part 113 do not include the internal electrodes 121, 122 and may include the same material as the dielectric layer 111. That is, the upper cover part 112 and the lower cover part 113 may include a ceramic material, for example, a barium titanate (BaTiO3)-based ceramic material, and may further include a piezoelectric ceramic material other than a barium titanate (BaTiO3)-based material.

[0059] That is, in the multilayer electronic component 100 according to one embodiment of the present invention, the upper and lower cover parts 112, 113 may contain a barium titanate (BaTiO3)-based material as a main component, and may contain a piezoelectric ceramic material other than the barium titanate (BaTiO3)-based material as a secondary component.

[0060] As mentioned above, as the demand for miniaturized and integrated IT electronic devices increases, the acoustic noise-related requirements for these devices are also becoming stricter. As a result, there is a need for products with improved acoustic noise characteristics.

[0061] When existing MLCCs are continuously exposed to acoustic noise generated when high frequency is applied and they operate, it may have side effects on adjacent circuits and devices or may cause unstable electrical signal transmission. In addition, the continuous generation of acoustic noise may deform the MLCC itself, reducing its reliability and durability, which may cause noise problems for users of devices that contain the MLCCs.

[0062] In order to solve these problems, research is being conducted into designing chips with low acoustic noise. However, rather than designing a chip with low acoustic noise, the present invention may have the effect of generating vibrations opposite to the vibrations generated in a multilayer electronic component when an AC voltage is applied, thereby canceling out noise caused by vibrations.

[0063] In general, a piezoelectric material is a material that has the property of converting electrical energy into kinetic energy using the piezoelectric effect, or converting kinetic energy into electrical energy using the inverse piezoelectric effect. The piezoelectric effect is divided into a forward piezoelectric effect and an inverse piezoelectric effect. The forward piezoelectric effect is an effect in which electrical energy is generated when a piezoelectric element is deformed, and the inverse piezoelectric effect is an effect in which displacement occurs when electrical energy is applied to a piezoelectric element. Of these, the inverse piezoelectric effect is applied in various fields, such as piezoelectric sensors, actuators, and motors.

[0064] Therefore, the present invention can utilize the piezoelectric effect or the inverse piezoelectric effect to offset the electrostrictive stress applied to the multilayer electronic component, thereby improving the reliability of the component.

[0065] The piezoelectric ceramic material described in the present invention may refer to any piezoelectric ceramic material other than barium titanate (BaTiO3)-based materials.

[0066] In the present invention, the term "major component" may mean a component that occupies a relatively large atomic percentage compared to other components, and may mean a component that occupies 50 at% or more based on the total number of atoms in the entire composition or all dielectric layers. The term "minor component" may mean a component that occupies a relatively small atomic percentage compared to other components, and may mean a component that occupies less than 50 at% based on the total number of atoms in the entire composition or all dielectric layers.

[0067] The piezoelectric ceramic materials may include at least one of single crystals, soft piezoceramics, hard piezoceramics, and high-temperature ceramics.

[0068] More specifically, the single crystals are 0.67PMN-0.33PT(0.67Pb(Mg 1 / 3 Nb 2 / 3 )O3-0.33PbTiO3), 0.71PMN-0.29PT(0.71Pb(Mg 1 / 3 Nb 2 / 3 )O3-0.29PbTiO3), 0.93PZN-0.07PT(0.93Pb(Zn 1 / 3 Nb 2 / 3 )O3-0.07PbTiO3), 0.91PZN-0.07PT(0.91Pb(Zn 1 / 3 Nb 2 / 3 )O3-0.07PbTiO3), 0.66PIN-0.34PT(0.66Pb(In 1 / 2 Nb 1 / 2 )O3-0.34PbTiO3), KNNT (Potassium Sodium Niobate Tantalate), LiNbO3 (Lithium Niobate), and α-Quartz (Alpha Quartz, SiO2).

[0069] The piezoelectric ceramic material having a single crystal structure can maintain its crystal structure during the firing process, and can remain in a single crystal structure in the covers 112 and 113 even after firing.

[0070] As a method for confirming the presence or absence of a single crystal or a single crystalline substance, for example, when measuring using X-ray diffraction (XRD), the presence or absence of a single crystal can be confirmed by confirming the structure of the crystal lattice detected through the measured peak, or a specific single crystalline substance can be confirmed from the detected peak, but the method is not particularly limited thereto.

[0071] Ductile piezoceramics are PZT-5A (Lead Zirconate Titanate-5A), 2.5Sm-PMN-29PT (2.5% Samarium-doped Lead Magnesium Niobate-29Lead Titanate), textured PMN-PT (Textured Lead Magnesium Niobate-Lead Titanate), 0.3PZN-0.7PZT (Lead Zirconate Titanate-Lead Zirconate Titanate), 0.55PNN-0.135PZ-0.315PT(Lead Niobate-Lead Zirconate-Lead Titanate), Textured(KNL)(NTS)O3(Textured Potassium Sodium Niobate Tantalate), BNT(Bismuth Sodium Titanate), and NKN-BZ-BLT (NaNbO3-BaZrO3-BiLa4Ti3O 12 ) may be included.

[0072] Hard piezoceramics include KNN-KCN (Potassium Sodium Niobate-Potassium Calcium Niobate), PZT-4 (Lead Zirconate Titanate-4), PZT-8 (Lead Zirconate Titanate-8), PMMnN-PZT (Lead Magnesium Manganese Niobate-Lead Zirconate) PMMnN-PZT+0.2wt% CuO(Lead Magnesium Manganese Niobate-Lead Zirconate Titanate with 0.2% Copper Oxide), 0.015PSN-0.3PNN-0.685PZT(Lead Strontium Niobate-Lead Nickel Niobate-Lead Zirconate Titanate), PMS-PZT(Lead Magnesium Strontium-Niobate-Lead Zirconate The lead-containing polymer may include at least one of PMS-PNN-PZT (Lead Magnesium Strontium-Niobate-Lead Nickel Niobate-Lead Zirconate Titanate), PNW-PMS-PZT (Lead Niobate-Lead Magnesium Strontium-Niobate-Lead Zirconate Titanate), and PSN-PZN-PZT-Mn (Lead Strontium Niobate-Lead Zinc Niobate-Lead Zirconate Titanate with Manganese).

[0073] High-temperature ceramics include 0.36BiScO3-0.64PbTiO3 (Bismuth Scandium Oxide-Lead Titanium Oxide), 0.4Bi(Ga 1 / 4 Sc 3 / 4)O3-0.6PbTiO3(Bismuth Gallium Scandium Oxide-Lead Titanium Oxide), 0.34BS-0.66PT-Mn(Bismuth Scandium Oxide-Lead Titanium Oxide with Manganese), 0.45Bi(Fe 1 / 2 Sc 1 / 2 )O3-0.55PbTiO3(Bismuth Iron Scandium Oxide-Lead Titanium Oxide), 0.98(0.36BiScO3-0.64PbTiO3)-0.02LiNbO3(Bismuth Scandium Oxide-Lead Titanium Oxide with Lithium Niobate), 0.63Bi(Mg 1 / 2 Ti 1 / 2 )O3-0.37PbTiO3, 0.46[BiScO3+Bi(Ni 1 / 2 Ti 1 / 2 )O3]-0.54PbTiO3(Bismuth Magnesium Titanium Oxide-Lead Titanium Oxide), and 0.35BiScO3-0.25Bi(Zr 0.5 Zinc 0.5 )O3-0.625PbTiO3 (Bismuth Scandium Oxide-Bismuth Nickel Titanium Oxide-Lead Titanium Oxide).

[0074] In one embodiment of the present invention, the cover portions 112, 113 include a plurality of dielectric crystal grains, and the plurality of dielectric crystal grains may include first dielectric crystal grains 10 including a barium titanate (BaTiO3)-based material, and second dielectric crystal grains 20 including the above-mentioned piezoelectric ceramic material.

[0075] Since the cover parts 112, 113 include the second dielectric crystal grains 20 containing a piezoelectric ceramic material, the piezoelectric effect or the inverse piezoelectric effect can be effectively realized, and the acoustic noise applied to the multilayer electronic component 100 can be offset and the electrostrictive stress can be reduced, thereby improving the reliability and lifespan of the multilayer electronic component 100.

[0076] As a method for measuring the dielectric crystal grains, for example, a cross-section in a first direction and a second direction or a cross-section in a first direction and a third direction of the cover part can be measured using a scanning electron microscope (SEM) or a transmission electron microscope (TEM). In an energy dispersive X-ray spectroscopy (EDS) mode, dielectric crystal grains simultaneously containing barium (Ba), titanium (Ti), and oxygen (O) elements can be interpreted as the first dielectric crystal grains 10, and dielectric crystal grains containing elements contained in the piezoelectric ceramic material can be interpreted as the second dielectric crystal grains 20.

[0077] In addition, when the cover parts 112 and 113 include the second dielectric crystal grains 20, the dielectric constant, dielectric loss, frequency characteristics, etc., may be different from those when the cover parts 112 and 113 include only the first dielectric crystal grains 10, or the piezoelectric characteristics may be improved depending on the product, when measured using equipment such as an LCR meter, an Impedance analyzer, a d33 meter, etc. Whether or not the cover parts 112 and 113 include the second dielectric crystal grains 20 may be measured using such a piezoelectric material measuring equipment, but is not particularly limited thereto.

[0078] In the stacked electronic component 100 according to an embodiment of the present invention, when the number of the first dielectric crystal grains 10 included in the cover portions 112 and 113 is A and the number of the second dielectric crystal grains 20 included in the cover portions 112 and 113 is B, the cover portions 112 and 113 can satisfy B≤A. That is, among the plurality of dielectric crystal grains included in the cover portions 112 and 113, the number of the first dielectric crystal grains 10 may be larger than that of the second dielectric crystal grains 20. Here, that the cover portions 112 and 113 satisfy B≤A can mean that the upper cover portion 112 satisfies B≤A, or the lower cover portion 113 satisfies B≤A, or that both the upper and lower cover portions 112 and 113 satisfy B≤A.

[0079] For example, referring to FIGS. 2 and 4, the number of the first dielectric crystal grains 10 included in a 10 μm×10 μm region based on the cross-section of the cover portion described above can be defined as A, and the number of the second dielectric crystal grains 20 can be defined as B, and it can be meant that the region satisfies B≤A, but it is not particularly limited thereto.

[0080] When the number (A) of the first dielectric crystal grains and the number (B) of the second dielectric crystal grains included in the cover portions 112 and 113 satisfy B≤A, the electrostrain stress due to the acoustic noise applied to the cover portions 112 and 113 can be effectively reduced, the strength of the cover portions 112 and 113 can be maintained, and the internal electrodes 121 and 122 can be sufficiently protected.

[0081] When the number (A) of the first dielectric crystal grains and the number (B) of the second dielectric crystal grains included in the cover portions 112 and 113 satisfy A<B, the electrostrain stress due to the acoustic noise applied to the cover portions 112 and 113 can be more effectively reduced, but there is a possibility that a problem may occur in that the strength of the cover portions 112 and 113 decreases and the internal electrodes 121 and 122 cannot be sufficiently protected.

[0082] Alternatively, in the multilayer electronic component 100 according to an embodiment of the present invention, the number ratio of the first dielectric crystal grains 10 among the plurality of dielectric crystal grains included in the cover parts 112 and 113 may be 50% or more, or the number ratio of the second dielectric crystal grains 20 among the plurality of dielectric crystal grains included in the cover parts 112 and 113 may be 50% or less. Here, "the number ratio of the first dielectric crystal grains 10 among the plurality of dielectric crystal grains included in the cover parts 112 and 113 may be 50% or more, or the number ratio of the second dielectric crystal grains 20 among the plurality of dielectric crystal grains included in the cover parts 112 and 113 may be 50% or less" may mean that the number ratio of the first dielectric crystal grains 10 among the plurality of dielectric crystal grains included in at least one of the upper cover part 112 or the lower cover part 113 may be 50% or more, or the number ratio of the second dielectric crystal grains 20 among the plurality of dielectric crystal grains included in the cover parts 112 and 113 may be 50% or less. For example, it may mean that, among a plurality of dielectric crystal grains included in a 10 μm×10 μm region based on the cross-section of the above-mentioned cover portion, the number ratio of the first dielectric crystal grains 10 is 50% or more, or that the number ratio of the second dielectric crystal grains 20 among the plurality of dielectric crystal grains is 50% or less, but is not particularly limited thereto.

[0083] By satisfying that the number ratio of the first dielectric crystal grains among the plurality of dielectric crystal grains contained in the cover portions 112, 113 is 50% or more, or the number ratio of the second dielectric crystal grains among the plurality of dielectric crystal grains contained in the cover portions 112, 113 is 50% or less, the electrostrictive stress caused by acoustic noise applied to the cover portions 112, 113 can be effectively reduced, the strength of the cover portions 112, 113 can be maintained, and the internal electrodes 121, 122 can be adequately protected.

[0084] When the ratio of the number of first dielectric crystal grains among the plurality of dielectric crystal grains contained in the cover portions 112, 113 is less than 50%, or when the ratio of the number of second dielectric crystal grains among the plurality of dielectric crystal grains contained in the cover portions 112, 113 exceeds 50%, the electrostrictive stress caused by acoustic noise applied to the cover portions 112, 113 can be more effectively reduced, but the strength of the cover portions 112, 113 is reduced, which may cause a problem that the internal electrodes 121, 122 cannot be adequately protected.

[0085] On the other hand, the thickness tc of the covers 112 and 113 does not need to be particularly limited.

[0086] However, in order to more easily achieve miniaturization and high capacity of the multilayer electronic component, the thickness tc of the cover parts 112, 113 may be 100 μm or less, preferably 30 μm or less, and in the case of ultra-small products, more preferably 20 μm or less.

[0087] Here, the thickness tc of the cover parts 112, 113 may refer to the size of the cover parts 112, 113 in the first direction. In addition, the thickness tc of the cover parts 112, 113 may refer to the average thickness tc of the cover parts 112, 113, or may refer to the average size of the cover parts 112, 113 in the first direction.

[0088] The average size in the first direction of the cover parts 112 and 113 may be measured by scanning an image of a cross-section in the first and second directions of the body 110 with a scanning electron microscope (SEM) at a magnification of 10,000. More specifically, it may mean an average value calculated by measuring the size in the first direction at 30 points equally spaced in the second direction in an image obtained by scanning one cover part.

[0089] In addition, the average size in the first direction of the cover portion measured by the above-mentioned method may be substantially the same as the average size in the first direction of the cover portion in the cross-sections of the main body 110 in the first and third directions.

[0090] Meanwhile, the multilayer electronic component 100 may include side margin portions 114 and 115 disposed on both end surfaces of the body 110 in the third direction.

[0091] More specifically, the side margin portions 114, 115 may include a first side margin portion 114 disposed on the fifth surface 5 of the main body 110 and a second side margin portion 115 disposed on the sixth surface 6 of the main body 110.

[0092] As shown in the figure, the side margin portions 114, 115 may refer to the areas between the end surfaces in the first and third directions of the second internal electrodes 121, 122 and the boundary surface of the body 110, based on the cross-sections in the first and third directions of the body 110.

[0093] The side margin portions 114, 115 can also be formed by applying a conductive paste to the ceramic green sheet applied to the capacitance forming portion Ac to form the internal electrodes 121, 122, except for the areas where the side margin portions 114, 115 are formed, and then cutting the laminated internal electrodes 121, 122 so that they are exposed on the fifth surface 5 and the sixth surface 6 of the main body 110 in order to suppress steps caused by the internal electrodes 121, 122, and then stacking a single dielectric layer 111 or two or more dielectric layers 111 in the third direction on both end surfaces in the third direction of the capacitance forming portion Ac.

[0094] The side margins 114 and 115 essentially serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0095] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121, 122 and may include the same material as the dielectric layer 111. That is, the first side margin portion 114 and the second side margin portion 115 may include a ceramic material, for example, a barium titanate (BaTiO3)-based ceramic material, and may further include a piezoelectric ceramic material other than a barium titanate (BaTiO3)-based material.

[0096] That is, in the multilayer electronic component 100 according to one embodiment of the present invention, the first side margin portion 114 and the second side margin portion 115 may include a barium titanate (BaTiO3)-based material as a main component, and may include a piezoelectric ceramic material other than a barium titanate (BaTiO3)-based material as a secondary component.

[0097] In the following, the description of the piezoelectric ceramic material related to the side margin portions 114 and 115 may be the same as the description of the piezoelectric ceramic material related to the cover portions 112 and 113, so duplicated content may be omitted.

[0098] However, the piezoelectric ceramic material contained in the side margin portions 114, 115 does not necessarily have to contain the same piezoelectric ceramic material as the piezoelectric ceramic material contained in the cover portions 112, 113, but may contain different piezoelectric ceramic materials, and when multiple piezoelectric ceramic materials are contained, all of the multiple piezoelectric ceramic materials may be different, or at least one of the piezoelectric ceramic materials may be the same.

[0099] That is, the piezoelectric ceramic material contained in the cover portions 112, 113 can be defined as a first piezoelectric ceramic material, and the piezoelectric ceramic material contained in the side margin portions 114, 115 can be defined as a second piezoelectric ceramic material, and the first piezoelectric ceramic material and the second piezoelectric ceramic material can be the same or different, or can each contain some of the same piezoelectric ceramic material.

[0100] The piezoelectric ceramic material contained in the side margin portions 114, 115, like the piezoelectric ceramic material contained in the cover portions 112, 113, may include at least one of single crystals, soft piezoceramics, hard piezoceramics, and high-temperature ceramics.

[0101] In one embodiment of the present invention, the side margin portions 114, 115 include a plurality of dielectric crystal grains, and the plurality of dielectric crystal grains may include first dielectric crystal grains including a barium titanate (BaTiO3)-based material and a second dielectric crystal grains including the piezoelectric ceramic material described above.

[0102] Since the side margin portions 114, 115 include the second dielectric crystal grains 20 containing a piezoelectric ceramic material, the piezoelectric effect or the inverse piezoelectric effect can be effectively realized, and the acoustic noise applied to the multilayer electronic component 100 can be offset and the electrostrictive stress can be reduced, thereby improving the reliability and lifespan of the multilayer electronic component 100.

[0103] As a method for measuring the dielectric crystal grains, for example, a cross-section in the first and third directions of the laminated electronic component including the side margin portion can be measured using a scanning electron microscope (SEM) or a transmission electron microscope (TEM). In an energy dispersive X-ray spectroscopy (EDS) mode, dielectric crystal grains containing barium (Ba), titanium (Ti), and oxygen (O) elements simultaneously can be interpreted as first dielectric crystal grains, and dielectric crystal grains containing elements contained in the piezoelectric ceramic material can be interpreted as second dielectric crystal grains.

[0104] In the stacked electronic component 100 according to an embodiment of the present invention, when the number of first dielectric crystal grains included in the side margin portions 114 and 115 is A and the number of second dielectric crystal grains is B, the side margin portions 114 and 115 can satisfy B≦A. That is, among the plurality of dielectric crystal grains included in the side margin portions 114 and 115, the number of first dielectric crystal grains may be even more than that of the second dielectric crystal grains.

[0105] Here, although the number of first dielectric crystal grains included in the side margin portions 114 and 115 is defined as A and the number of second dielectric crystal grains is defined as B, this may be different from the number of first dielectric crystal grains (A) and the number of second dielectric crystal grains (B) included in the cover portions 112 and 113. An ordinary technician can understand by distinguishing the descriptions of the cover portion and the side margin portion.

[0106] For example, based on the cross-section of the side margin portion described above, the number of first dielectric crystal grains 10 included in a 10 μm×10 μm region can be defined as A, and the number of second dielectric crystal grains 20 can be defined as B. It can be meant that the region satisfies B≦A, but it is not particularly limited thereto.

[0107] When the number of first dielectric crystal grains (A) and the number of second dielectric crystal grains (B) included in the side margin portions 114 and 115 satisfy B≦A, the electrostrain stress due to acoustic noise applied to the side margin portions 114 and 115 can be effectively reduced, the strength of the side margin portions 114 and 115 can be maintained, and the internal electrodes 121 and 122 can be sufficiently protected.

[0108] When the number of first dielectric crystal grains (A) and the number of second dielectric crystal grains (B) included in the side margin portions 114 and 115 are such that A<B, the electrostrain stress due to acoustic noise applied to the side margin portions 114 and 115 can be more effectively reduced. However, since the strength of the side margin portions 114 and 115 decreases, there is a possibility that the internal electrodes 121 and 122 cannot be sufficiently protected.

[0109] Alternatively, in the multilayer electronic component 100 according to one embodiment of the present invention, the ratio of the number of first dielectric crystal grains among the plurality of dielectric crystal grains included in the side margin portions 114, 115 may be 50% or more, or the ratio of the number of second dielectric crystal grains among the plurality of dielectric crystal grains included in the side margin portions 114, 115 may be 50% or less.

[0110] For example, it may mean that the ratio of the number of first dielectric crystal grains among a plurality of dielectric crystal grains included in a 10 μm×10 μm region based on the cross-section of the above-mentioned side margin portion is 50% or more, or that the ratio of the number of second dielectric crystal grains among a plurality of dielectric crystal grains is 50% or less, but is not limited thereto.

[0111] By satisfying that the number ratio of the first dielectric crystal grains among the plurality of dielectric crystal grains contained in the side margin portions 114, 115 is 50% or more, or the number ratio of the second dielectric crystal grains among the plurality of dielectric crystal grains contained in the side margin portions 114, 115 is 50% or less, it is possible to effectively reduce electrostrictive stress due to acoustic noise applied to the side margin portions 114, 115, while maintaining the strength of the side margin portions 114, 115 and adequately protecting the internal electrodes 121, 122.

[0112] When the ratio of the number of first dielectric crystal grains among the plurality of dielectric crystal grains contained in the side margin portions 114, 115 is less than 50%, or when the ratio of the number of second dielectric crystal grains among the plurality of dielectric crystal grains contained in the side margin portions 114, 115 exceeds 50%, the electrostrictive stress caused by acoustic noise applied to the side margin portions 114, 115 can be more effectively reduced, but the strength of the side margin portions 114, 115 is reduced, which may cause a problem that the internal electrodes 121, 122 cannot be adequately protected.

[0113] On the other hand, the width wm of the first side margin portion 114 and the second side margin portion 115 does not need to be particularly limited.

[0114] However, in order to more easily achieve miniaturization and high capacity of the multilayer electronic component 100, the width wm of the side margin portions 114, 115 may be 100 μm or less, preferably 30 μm or less, and in the case of ultra-small products, more preferably 20 μm or less.

[0115] Here, the width wm of the side margin portions 114, 115 may refer to the size of the side margin portions 114, 115 in the third direction. In addition, the width wm of the side margin portions 114, 115 may refer to the average width wm of the side margin portions 114, 115, or may refer to the average size of the side margin portions 114, 115 in the third direction.

[0116] The average size in the third direction of the side margin portions 114, 115 may be measured by scanning an image of a cross-section in the first and third directions of the body 110 with a scanning electron microscope (SEM) at a magnification of 10,000. More specifically, it may refer to an average value calculated by measuring the sizes in the third direction at 10 points equally spaced in the first direction in an image obtained by scanning one side margin portion.

[0117] In one embodiment of the present invention, a structure in which the ceramic electronic component 100 has two external electrodes 131, 132 is described, but the number and shape of the external electrodes 131, 132 can be changed depending on the shape of the internal electrodes 121, 122 and other purposes.

[0118] The outer electrodes 131 and 132 may be disposed on the body 110 and connected to the inner electrodes 121 and 122 .

[0119] More specifically, the external electrodes 131, 132 may include a first external electrode 131 and a second external electrode 132 disposed on the third surface 3 and the fourth surface 4 of the body 110, respectively, and connected to the first internal electrode 121 and the second internal electrode 122, respectively. That is, the first external electrode 131 may be disposed on the third surface 3 of the body and connected to the first internal electrode 121, and the second external electrode 132 may be disposed on the fourth surface 4 of the body and connected to the second internal electrode 122.

[0120] Furthermore, the external electrodes 131, 132 may be arranged to extend on a portion of the first surface 1 and the second surface 2 of the main body 110, or may be arranged to extend on a portion of the fifth surface 5 and the sixth surface 6 of the main body 110. That is, the first external electrode 131 may be arranged on a portion of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110, and the second external electrode 132 may be arranged on a portion of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110.

[0121] Meanwhile, the external electrodes 131 and 132 may be formed using any material having electrical conductivity, such as a metal, and the specific material may be determined taking into consideration electrical characteristics, structural stability, etc., and may further have a multi-layer structure.

[0122] For example, the external electrodes 131, 132 may include an electrode layer disposed on the body 110 and a plating layer 131c, 132c disposed on the electrode layer.

[0123] As a more specific example of the electrode layer, the electrode layer may include a first electrode layer 131a, 132a which is a fired electrode including a first conductive metal and glass, or a second electrode layer 131b, 132b which is a resin-based electrode including a second conductive metal and resin.

[0124] Here, the first conductive metal may refer to a conductive metal included in the first electrode layers 131a and 132a, and the second conductive metal may refer to a conductive metal included in the second electrode layers 131b and 132b. In this case, the first conductive metal and the second conductive metal may be the same or different, and may include the same metal material, but are not limited thereto.

[0125] The electrode layer may also be in a form in which a fired electrode and a resin-based electrode are successively formed on the main body.

[0126] In addition, the electrode layer may be formed by a method of transferring a sheet containing a conductive metal onto the main body, or may be formed by a method of transferring a sheet containing a conductive metal onto a fired electrode.

[0127] The conductive metal contained in the electrode layers 131a, 132a, 131b, and 132b may be a material having excellent electrical conductivity. For example, the conductive metal may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but is not limited thereto.

[0128] In one embodiment of the present invention, the electrode layers 131a, 132a, 131b, 132b may have a two-layer structure including a first electrode layer 131a, 132a and a second electrode layer 131b, 132b, whereby the external electrodes 131, 132 may include a first electrode layer 131a, 132a including a conductive metal and glass and a second electrode layer 131b, 132b disposed on the first electrode layer 131a, 132a and including a conductive metal and a resin.

[0129] The first electrode layers 131a and 132a contain glass and thus serve to improve the bonding with the main body 110, and the second electrode layers 131b and 132b contain resin and thus serve to improve the bending strength.

[0130] The conductive metal used for the first electrode layers 131a and 132a is not particularly limited as long as it can be electrically connected to the internal electrodes 121 and 122 to form capacitance, and may include, for example, at least one selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The first electrode layers 131a and 132a may be formed by applying a conductive paste prepared by adding glass frit to the conductive metal particles, and then firing the paste.

[0131] The conductive metal included in the second electrode layers 131b and 132b may serve to electrically connect the second electrode layers 131a and 132a to the first electrode layers 131a and 132a.

[0132] The conductive metal contained in the second electrode layers 131b and 132b is not particularly limited as long as it is a material that can be electrically connected to the electrode layers 131a and 132a, and may include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0133] The conductive metal contained in the second electrode layers 131b and 132b may include one or more of spherical particles and flake particles. That is, the conductive metal may be composed of only flake particles, or may be composed of only spherical particles, or may be a mixture of flake particles and spherical particles. Here, the spherical particles may include a shape that is not completely spherical, for example, a shape in which the length ratio of the major axis to the minor axis (major axis / minor axis) is 1.45 or less. The flake particles refer to particles having a flat and elongated shape, and are not particularly limited, but for example, the length ratio of the major axis to the minor axis (major axis / minor axis) may be 1.95 or more. The lengths of the major axis and minor axis of the spherical particles and the flake particles may be measured from an image obtained by scanning a cross-section in the first direction and the second direction cut at the center of the third direction of the ceramic electronic component with a scanning electron microscope (SEM).

[0134] The resin contained in the second electrode layers 131b and 132b can ensure bonding and absorb shock. The resin contained in the second electrode layers 131b and 132b is not particularly limited as long as it has bonding and shock absorbing properties and can be mixed with conductive metal particles to prepare a paste, and can include, for example, an epoxy resin.

[0135] In addition, the second electrode layers 131b and 132b may include a plurality of metal particles, an intermetallic compound, and a resin. By including the intermetallic compound, the electrical connectivity with the first electrode layers 131a and 132a may be further improved. The intermetallic compound may function to connect the plurality of metal particles to improve the electrical connectivity, and may function to surround the plurality of metal particles to connect them to each other.

[0136] At this time, the intermetallic compound may include a metal having a melting point lower than the curing temperature of the resin. That is, since the intermetallic compound includes a metal having a melting point lower than the curing temperature of the resin, the metal having a melting point lower than the curing temperature of the resin melts during the drying and curing process, and forms an intermetallic compound with a part of the metal particles to surround the metal particles. At this time, the intermetallic compound may include a low melting point metal of preferably 300° C. or less.

[0137] For example, it may contain Sn, which has a melting point of 213°C to 220°C. During the drying and hardening process, Sn melts, and the molten Sn wets high melting point metal particles such as Ag, Ni, or Cu by capillary action and reacts with some of the Ag, Ni, or Cu metal particles to form intermetallic compounds such as Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn. Ag, Ni, or Cu that is not involved in the reaction remains in the form of metal particles.

[0138] Thus, the metal particles may include one or more of Ag, Ni, and Cu, and the intermetallic compound may include one or more of Ag3Sn, Ni3Sn4, Cu6Sn5, and Cu3Sn.

[0139] The plating layers 131c and 132c can serve to improve mounting characteristics.

[0140] The type of plating layers 131c, 132c is not particularly limited, and may be a single layer plating layer 131c, 132c containing one or more of nickel (Ni), tin (Sn), palladium (Pd), and alloys thereof, or may be formed of multiple layers.

[0141] As a more specific example of the plating layers 131c, 132c, the plating layers 131c, 132c may be Ni plating layers or Sn plating layers, and may be in a form in which a Ni plating layer and a Sn plating layer are sequentially formed on the electrode layers 131a, 132a, 131b, 132b, or in a form in which a Sn plating layer, a Ni plating layer, and a Sn plating layer are sequentially formed. The plating layers 131c, 132c may include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0142] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0143] However, in order to simultaneously achieve miniaturization and high capacity, the thickness of the dielectric layers and internal electrodes must be reduced and the number of layers must be increased, so the effects of the present invention may be more pronounced in multilayer electronic components 100 that are 3216 (length x width: 3.2 mm x 1.6 mm) in size or less.

[0144] Although the embodiment of the present invention has been described in detail above, the present invention is not limited to the above-described embodiment and the accompanying drawings, but is limited by the scope of the accompanying claims. Therefore, various substitutions, modifications and changes can be made by a person having ordinary knowledge in the art within the scope of the technical idea of ​​the present invention described in the claims, and these also belong to the scope of the present invention.

[0145] In addition, the expression "one embodiment" used in the present invention does not mean the same embodiment, but is provided to emphasize and describe each unique feature that is different from the others. However, the above-mentioned one embodiment does not exclude being realized in combination with the features of another embodiment. For example, even if a matter described in a specific embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment, unless there is a description that is opposite or contradictory to the matter in the other embodiment.

[0146] The terms used in the present invention are merely used to describe one embodiment and are not intended to limit the present invention. In this case, a singular expression includes a plural expression unless the context clearly indicates otherwise. [Explanation of symbols]

[0147] 10: First dielectric crystal grain 20: second dielectric grain 100: Multilayer electronic components 110: Main unit 111: Dielectric layer 112, 113: Cover part 114, 115: Side margin 121, 122: Internal electrode 131, 132: External electrode

Claims

1. a capacitance forming portion including dielectric layers and internal electrodes arranged alternately with the dielectric layers in a first direction, and a body including cover portions arranged on both end surfaces of the capacitance forming portion in the first direction; an external electrode disposed on the body; The cover portion is mainly composed of barium titanate (BaTiO ３ )-based material, and the barium titanate (BaTiO ３ )-based materials.

2. the cover portion includes a plurality of dielectric crystal grains, The dielectric crystal grains included in the cover are made of the barium titanate (BaTiO ３ 2. The multilayer electronic component according to claim 1, comprising first dielectric crystal grains including a PZT-based material, and second dielectric crystal grains including the piezoelectric ceramic material.

3. 3. The multilayer electronic component according to claim 2, wherein when the number of the first dielectric crystal grains included in the cover portion is A and the number of the second dielectric crystal grains included in the cover portion is B, B≦A is satisfied.

4. The multilayer electronic component according to claim 2 , wherein a ratio of the number of the first dielectric crystal grains to the number of the plurality of dielectric crystal grains included in the cover portion is 50% or more.

5. 3. The multilayer electronic component according to claim 2, wherein a ratio of the number of the second dielectric crystal grains to the number of the plurality of dielectric crystal grains included in the cover portion is 50% or less.

6. 2. The multilayer electronic component of claim 1, wherein the piezoelectric ceramic material comprises at least one of single crystals, soft piezoceramics, hard piezoceramics, and high-temperature ceramics.

7. The single crystals are 0.67PMN-0.33PT, 0.71PMN-0.29PT, 0.93PZN-0.07PT, 0.91PZN-0.07PT, 0.66PIN-0.34PT, KNNT, LiNbO ３ 7. The multilayer electronic component according to claim 6, comprising at least one of α-Quartz and α-Quartz.

8. The soft piezoceramics are PZT-5A, 2.5Sm-PMN-29PT, textured PMN-PT, 0.3PZN-0.7PZT, 0.55PNN-0.135PZ-0.315PT, Textured (KNL) (NTS) O ３ 7. The multilayer electronic component according to claim 6, comprising at least one of BNT and NKN-BZ-BLT.

9. 7. The multilayer electronic component according to claim 6, wherein the hard piezoceramics include at least one of KNN-KCN, PZT-4, PZT-8, PMMnN-PZT, PMMnN-PZT+0.2 wt % CuO, 0.015PSN-0.3PNN-0.685PZT, PMS-PZT, PMS-PNN-PZT, PNW-PMS-PZT, and PSN-PZN-PZT-Mn.

10. The high-temperature ceramics are 0.36BiScO ３ -0.64PbTiO ３ , 0.4Bi(Ga １／４ S.C. ３／４ ) O ３ -0.6PbTiO ３ , 0.34BS-0.66PT-Mn, 0.45Bi(Fe １／２ S.C. １／２ ) O ３ -0.55PbTiO ３ , 0.98 (0.36BiScO ３ -0.64PbTiO ３ )-0.02LiNbO ３ , 0.63Bi(Mg １／２ Ti １／２ ) O ３ -0.37PbTiO ３ , 0.46[BiScO ３ +Bi(Ni １／２ Ti １／２ ) O ３ ]-0.54PbTiO ３ , and 0.35BiScO ３ -0.25Bi(Zr ０．５ Zinc ０．５ ) O ３ -0.625PbTiO ３ The multilayer electronic component according to claim 6 , comprising at least one of the following:

11. 2. The multilayer electronic component according to claim 1, wherein a region of said capacitance forming portion within 10 [mu]m from an interface with said cover portion toward a center of said capacitance forming portion contains said piezoelectric ceramic material.

12. 2. The multilayer electronic component according to claim 1, wherein a region of said capacitance forming portion other than a region extending 10 [mu]m from an interface with said cover portion toward a center of said capacitance forming portion does not contain said piezoelectric ceramic material.

13. 2. The multilayer electronic component according to claim 1, wherein the capacitance forming portion does not contain the piezoelectric ceramic material.

14. 14. The multilayer electronic component according to claim 1, wherein the cover portion includes a first cover portion arranged on one side of the capacitance forming portion in the first direction, and a second cover portion arranged on the other side of the capacitance forming portion in the first direction, and an average size in the first direction of the first cover portion and the second cover portion is each 100 μm or less.

15. the main body includes a first surface and a second surface facing each other in the first direction, a third surface and a fourth surface connected to the first surface and the second surface and facing each other in the second direction, and a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface, and the fourth surface and facing each other in the third direction, a side margin portion disposed on the fifth surface and the sixth surface of the main body; The side margin portion is mainly composed of barium titanate (BaTiO ３ 14. The multilayer electronic component according to claim 1, comprising a Pb-based material and the piezoelectric ceramic material as a subcomponent.

16. The dielectric layer is made of (Ba １－ｘ Ca ｘ ) TiO ３ (0<x<1), Ba(Ti １－ｙ Ca ｙ ) O ３ (0<y<1), (Ba １－ｘ Ca ｘ ) (Ti １－ｙ Zr ｙ ) O ３ (0<x<1, 0<y<1) and Ba(Ti １－ｙ Zr ｙ ) O ３ The multilayer electronic component according to claim 1 , wherein y is a number greater than or equal to 1.

17. The cover portion is made of barium titanate (BaTiO ３ )-based materials include (Ba １－ｘ Ca ｘ ) TiO ３ (0<x<1), Ba(Ti １－ｙ Ca ｙ ) O ３ (0<y<1), (Ba １－ｘ Ca ｘ ) (Ti １－ｙ Zr ｙ ) O ３ (0<x<1, 0<y<1) and Ba(Ti １－ｙ Zr ｙ ) O ３ The multilayer electronic component according to claim 1 , wherein y is a number greater than or equal to 1.

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