Substrate processing method

Abstract

To provide a substrate processing method that suppresses a decrease in the carbon concentration in a carbon-containing film.SOLUTION: A substrate processing method includes the steps of forming a flowable oligomer including carbon on a substrate, and exposing the substrate to a plasma of a modifying gas including carbon and hydrogen to modify the flowable oligomer to form a carbon-containing film.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a substrate processing method.

Background Art

[0002] Patent Document 1 discloses a method for forming an insulating film, which includes reacting an oxygen-containing silicon compound gas and a non-oxidizing hydrogen-containing gas in a state where at least the non-oxidizing hydrogen-containing gas is plasmaized to form a fluid silanol compound on a substrate, and then annealing the substrate to form the silanol compound into an insulating film.

[0003] Patent Document 2 discloses a method for forming an insulating film containing nitrogen and / or carbon in a recess formed on the surface of a substrate, which includes a step of forming a fluid film in the recess by activating and supplying a processing gas containing a precursor gas and a reducing gas to a substrate adjusted to a first temperature by plasma, and a step of curing the fluid film by heat-treating the substrate at a second temperature higher than the first temperature.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0005] On one side, the present disclosure provides a substrate processing method for suppressing a decrease in the carbon concentration in a carbon-containing film.

Means for Solving the Problems

[0006] To solve the above problems, according to one aspect, there is provided a substrate processing method including: a step of forming a fluid oligomer containing carbon on a substrate; and a step of exposing the substrate to a plasma of a reforming gas containing carbon and hydrogen to reform the fluid oligomer to form a carbon-containing film.

Advantages of the Invention

[0007] According to one aspect, it is possible to provide a substrate processing method for suppressing a decrease in the carbon concentration in a carbon-containing film.

Brief Description of the Drawings

[0008]

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Mode for Carrying Out the Invention

[0009] Hereinafter, embodiments for carrying out the present disclosure will be described with reference to the drawings. In each drawing, the same reference numerals are assigned to the same components, and redundant descriptions may be omitted.

[0010] [Method for Forming Carbon-Containing Film] An example of the method for forming a carbon-containing film according to this embodiment will be described with reference to FIG. 1. FIG. 1 is a flowchart showing an example of the method for forming a carbon-containing film according to this embodiment. Here, a method of embedding a carbon-containing film in a recess such as a trench in a substrate will be described as an example.

[0011] Here, the carbon-containing film is a film containing carbon (C). Further, the carbon-containing film is a film containing at least one of silicon (Si) and boron (B). Further, the carbon-containing film may contain oxygen (O), nitrogen (N), etc. Specifically, the carbon-containing film may be any of SiC, SiOC, SiOCN, SiCN, BCN, etc.

[0012] In step S101, a substrate having a pattern of recesses on its surface is prepared. Here, in a processing apparatus 1 (see FIG. 13 described later), the substrate W is placed on the mounting table 3 of the processing apparatus 1.

[0013] In step S102, a raw material gas containing carbon is supplied to the substrate. Here, in a processing apparatus 1 (see FIG. 13 described later), the raw material gas is supplied into a processing container 2 that houses the substrate W. Here, the raw material gas contains carbon (C). Further, the raw material gas contains at least one of silicon (Si) and boron (B). Further, the raw material gas contains at least one of Si-C bonds and B-C bonds.

[0014] Specifically, the raw material gas is methyltrimethoxysilane (MTMOS; Si(OCH 3 ) 3 CH 3) Methyltriethoxysilane (MTEOS; Si(OC 2 H 5 ) 3 CH 3 ) Dimethyldimethoxysilane (DMDMOS; Si(OCH 3 ) 2 (CH 3 ) 2 ) Hexamethyldisiloxane (HMDS; Si(CH 3 ) 3 OSi(CH 3 ) 3 ) Tetramethylcyclotetrasiloxane (TMCTS; (HSiCH 3 O) 4 ) Trimethylboron (TMB; B(CH 3 ) 3 ) Any of these can be used.

[0015] In step S103, a carbon-containing fluid oligomer is formed on the substrate by plasma polymerization. Here, the first power is supplied to generate plasma, and the raw material gas containing carbon is plasma polymerized by the PECVD (Plasma Enhanced Chemical Vapor Deposition) method to form a carbon-containing fluid oligomer (liquid oligomer). The temperature at which the fluid oligomer is formed is the first temperature. Specifically, the first temperature is preferably in the range of -50°C to 100°C. The formed carbon-containing fluid oligomer adheres to the substrate surface and flows into the recesses.

[0016] In step S104, the generation of plasma is stopped and the supply of the raw material gas is stopped.

[0017] In step S105, the substrate is modified with a carbon- and hydrogen-containing plasma and annealed. Here, in a processing apparatus 1 (see FIG. 13 described later), a reforming gas containing carbon and hydrogen is supplied into a processing container 2 that houses a substrate W, and a second power is supplied to generate a plasma of the reforming gas, and the substrate is exposed to the plasma of the reforming gas. Note that the processing apparatus that performs the process of step S105 may be a processing apparatus different from the processing apparatus 1 of step S102. Thereby, the fluid oligomer is modified to form a carbon-containing film. Note that the temperature at which the fluid oligomer is modified is a second temperature higher than the first temperature. Specifically, the second temperature is preferably in the range of 100°C to 700°C. Also, the second power is greater than the first power. This is because the first power needs to suppress excessive decomposition of the oligomer and maintain fluidity, so a low power is desirable, and the second power is desirably greater than the first power because it is for the purpose of curing and modifying the fluid oligomer. Also, the frequency of the power for generating the plasma is preferably in the range of 13 MHz to 2.45 GHz. By subjecting the fluid oligomer to a plasma modification process at the second temperature, the fluid oligomer is cured, and at the same time, carbon loss in the fluid oligomer is suppressed to form a modified carbon-containing film. Thereby, the fluid oligomer that has flowed into the recess is cured, and the recess is filled with the carbon-containing film.

[0018] Here, the reforming gas contains carbon (C) and hydrogen (H). Also, the reforming gas may include a hydrocarbon gas and a hydrogen-containing gas. The hydrocarbon gas may be any of methane, ethane, propane, ethylene, propylene, acetylene, etc. of C x H y (where x and y are natural numbers of 1 or more). The hydrogen-containing gas may be H 2 .

[0019] Further, the ratio of hydrogen to carbon in the reformed gas may be determined based on the carbon concentration of the formed carbon-containing film. Further, the ratio of the hydrogen-containing gas to the hydrocarbon gas in the reformed gas is preferably in the range of 1:2 to 1:200. Further, the hydrocarbon gas may be determined based on the carbon concentration of the formed carbon-containing film. For example, when the carbon concentration of the carbon-containing film is low, plasma reforming treatment is performed using propane having a large number of carbon atoms. Further, for example, when the carbon concentration of the carbon-containing film is high, plasma reforming treatment is performed using methane having a small number of carbon atoms. Thereby, generation of a film formation mode and an etching mode can be suppressed by the reforming treatment of the reformed gas with plasma, and the carbon-containing film can be reformed.

[0020] Further, the reformed gas may further contain a nitrogen-containing gas in addition to the hydrocarbon gas and the hydrogen-containing gas. The nitrogen-containing gas may be any one of N 2 , NH 3 , N 2 O, etc. The nitrogen-containing gas is used to incorporate nitrogen into the carbon-containing film. Thereby, the film density of the carbon-containing film can be increased (densified).

[0021] Further, the reformed gas may further contain a silicon-containing gas. The silicon-containing gas may be any one of higher-order silanes such as silane, disilane, trisilane, and tetrasilane. The silicon-containing gas suppresses the incorporation of oxygen into the carbon-containing film by removing oxygen remaining in the processing vessel 2.

[0022] Further, the reformed gas may further contain an inert gas. The inert gas may be any one of Ar, He, N 2 , etc.

[0023] Here, changes in the carbon concentration in the film in the reforming treatment of step S105 will be described with reference to FIG. 2. FIG. 2 is a cross-sectional schematic view of a substrate schematically showing the carbon concentration in the film in the reforming treatment.

[0024] FIG. 2(a) is a schematic cross-sectional view showing the time of the reforming treatment. The substrate has an underlayer 200 and a fluid film 210. The fluid film 210 is formed of a fluid oligomer containing carbon (C). Further, the fluid film 210 of the substrate is subjected to a reforming treatment with a plasma containing carbon (C).

[0025] FIG. 2(b) is a schematic cross-sectional view showing after the reforming treatment. By performing the reforming treatment with a plasma containing carbon (C), a decrease in the carbon concentration in the carbon-containing film 215 is suppressed. Further, by reforming the fluid film 210 with a plasma containing carbon (C) having a smaller ionization energy compared to hydrogen (H) and nitrogen (N), damage to the carbon-containing film 215 is reduced.

[0026] Further, since the reforming gas contains hydrogen (H), adhesion of reaction by-products to the substrate surface due to the plasma of hydrogen (H) is suppressed.

[0027] Returning to FIG. 1, in step S106, it is determined whether or not the desired film thickness has been reached. If the desired film thickness has not been reached (S106·NO), the process returns to step S102, and the processes of steps S102 to S105 are repeated until the desired film thickness is reached. When the desired film thickness is reached (S106·YES), the process ends.

[0028] The structure of the film before and after the reforming treatment will be described with reference to FIGS. 3 to 5. FIG. 3 is a graph showing an example of the analysis results of the structure in the fluid film 210 and the carbon-containing film 215. Here, the fluid film 210 before the reforming treatment and the carbon-containing film 215 after the reforming treatment were analyzed by Fourier transform infrared spectroscopy (FT-IR). The broken line shows the result of the fluid film 210 before the reforming treatment, and the solid line shows the result of the carbon-containing film 215 after the reforming treatment.

[0029] The fluid film 210 (fluid oligomer) before the reforming treatment shows a peak indicating a C-H bond and a peak indicating a Si-CH 3 bond. FIG. 4 is a structural diagram showing an example of the structure of the fluid film 210 before the reforming treatment.

[0030] The carbon-containing film 215 after the modification treatment shows a decrease in the peak indicating the C-H bond and the peak indicating the Si-CH 3 bond, and an increase in the peaks indicating the Si-N bond and the Si-C bond. FIG. 5 is a structural diagram showing an example of the structure of the carbon-containing film 215 after the modification treatment.

[0031] An example of the polymerization reaction is shown by the following formula (1).

[0032] Si-H + Si-CH 3 → Si-CH 2 -Si + 2H 2 ↑ (1)

[0033] Thus, by exposing the fluid film 210 to the carbon-containing plasma, the C-H bond and the Si-CH 3 bond decrease, and the main bonds (Si-N bond, Si-C bond) increase. Thereby, the carbon-containing film 215 is formed.

[0034] Also, when the substrate is subjected to the modification treatment by the plasma of the modification gas, it is assumed that a carbon film adheres to the substrate surface using a hydrocarbon gas as a raw material. The adhesion of the carbon film will be described with reference to FIGS. 6 to 8.

[0035] FIG. 6 is an example of a graph showing the relationship between the flow rate of the hydrogen-containing gas (H 2 gas) and the adhesion amount of the carbon film. In FIG. 6, the horizontal axis represents the flow rate of the hydrogen-containing gas (H 2 gas), and the vertical axis represents the film thickness of the carbon film adhering to the substrate surface. FIG. 7 is an example of a graph showing the relationship between the pressure and the adhesion amount of the carbon film. In FIG. 7, the horizontal axis represents the pressure, and the vertical axis represents the film thickness of the carbon film adhering to the substrate surface. FIG. 8 is an example of a graph showing the relationship between the flow rate of the hydrocarbon gas (C 2 H 2 gas) and the adhesion amount of the carbon film. In FIG. 8, the horizontal axis represents the flow rate of the hydrocarbon gas (C 2 H 2 gas), and the vertical axis represents the film thickness of the carbon film adhering to the substrate surface.

[0036] As shown in Fig. 6, as the hydrogen-containing gas (H 2 gas) increases, the deposition amount of the carbon film decreases. On the other hand, as the hydrogen-containing gas (H 2 gas) decreases, the deposition amount of the carbon film increases.

[0037] As shown in Fig. 7, as the pressure increases, the deposition amount of the carbon film decreases. On the other hand, as the pressure decreases, the deposition amount of the carbon film increases.

[0038] As shown in Fig. 8, at a flow rate of 0 sccm of the hydrogen-containing gas (H 2 gas) and a pressure of 0.1 Torr, as the flow rate of the hydrocarbon gas (C 2 H 2 gas) increases, the deposition amount of the carbon film increases. At a flow rate of 4 sccm of the hydrogen-containing gas (H 2 gas) and a pressure of 0.1 Torr, as the flow rate of the hydrocarbon gas (C 2 H 2 gas) increases, the deposition amount of the carbon film increases. On the other hand, at a flow rate of 4 sccm of the hydrogen-containing gas (H 2 gas) and a pressure of 0.6 Torr, even when the flow rate of the hydrocarbon gas (C 2 H 2 gas) increased, no increase in the deposition amount of the carbon film was observed.

[0039] Thus, as shown in Figs. 6 to 8, by adjusting the flow rate of the hydrogen-containing gas (H 2 gas), the pressure, and the flow rate of the hydrocarbon gas (C 2 H 2 gas), it is possible to prevent the carbon film from adhering to the surface of the carbon-containing film 215 due to the etching effect of the hydrogen plasma.

[0040] As described above, by performing the reforming treatment with the carbon- and hydrogen-containing plasma, it is possible to suppress the decrease in the carbon concentration in the film while preventing the adhesion of the carbon film, and to reform the fluid oligomer into a carbon-containing film.

[0041] Figure 9 is a graph showing an example of the atomic concentration distribution. (a) is a carbon-containing film obtained by subjecting a fluid oligomer to only heat treatment, (b) is a carbon-containing film obtained by annealing a fluid oligomer using carbon and hydrogen plasmas, (c) is a carbon-containing film obtained by annealing a fluid oligomer using carbon-hydrogen and nitrogen plasmas, (d) is a carbon-containing film obtained by annealing a fluid oligomer using hydrogen and nitrogen plasmas, and (e) is a carbon-containing film obtained by annealing a fluid oligomer using hydrogen plasma.

[0042] When hydrogen and nitrogen plasmas shown in (d) are used, carbon in the film reacts with the hydrogen plasma and desorbs as CH 4 In addition, carbon in the film reacts with the nitrogen plasma and desorbs as CH 3 NH 2 As a result, in (d), carbon (C) in the film is significantly reduced compared to (a).

[0043] When hydrogen plasma shown in (e) is used, carbon in the film reacts with the hydrogen plasma and desorbs as CH 4 As a result, in (e), carbon (C) in the film is significantly reduced compared to (a).

[0044] On the other hand, when carbon and hydrogen plasmas shown in (b) are used, a significant reduction in carbon (C) in the film can be suppressed. In other words, (b) can increase the carbon concentration in the film compared to (e).

[0045] In addition, when carbon, hydrogen, and nitrogen plasmas shown in (c) are used, a significant reduction in carbon (C) in the film can be suppressed. In other words, (c) can increase the carbon concentration in the film compared to (d). Also, (c) can increase the nitrogen concentration in the film compared to (b).

[0046] Figure 10 is a graph showing an example of film density. (a) shows a carbon-containing film obtained by subjecting a fluid oligomer to only heat treatment, (b) shows a carbon-containing film obtained by annealing a fluid oligomer using carbon and hydrogen plasma, and (c) shows a carbon-containing film obtained by annealing a fluid oligomer using carbon, hydrogen, and nitrogen plasma.

[0047] (b) and (c) show an increase in film density compared to (a). As a result, the electrical properties (insulating properties) and etching resistance of the carbon-containing film are improved.

[0048] Next, the influence of oxygen remaining in the processing chamber will be described with reference to FIGS. 11 and 12. FIG. 11 is a schematic cross-sectional view of a substrate schematically showing the carbon concentration in the film in a reference example. FIG. 12 is a schematic cross-sectional view of a substrate schematically showing the carbon concentration in the film when a silicon-containing gas is added.

[0049] As shown in FIG. 11(a), oxygen 300 remaining in the processing chamber is included during the modification process. Therefore, as shown in FIG. 11(b), oxygen 305 is incorporated into the carbon-containing film 215. As a result, the oxygen concentration in the film may increase. In addition, the incorporated oxygen 305 may combine with carbon in the film and desorb, resulting in a possible decrease in the carbon concentration in the film.

[0050] On the other hand, as shown in FIG. 12(a), the modification gas contains a silicon-containing gas 310 (here, SiH 4 ). As a result, as shown in FIG. 12(b), oxygen 300 reacts with the silicon-containing gas 310 to form reaction products 315 (SiO 2 , H 2 ), and the reaction products 315 are discharged out of the processing chamber by the gas flow. Therefore, the incorporation of oxygen 300 into the carbon-containing film 215 is suppressed. As a result, an increase in the oxygen concentration in the film is suppressed. In addition, the desorption of carbon in the film is suppressed, and a decrease in the carbon concentration in the film is suppressed.

[0051] [Processing Apparatus 1] Next, a process for forming the fluid film 210 (S102 to S104) and a process for modifying the fluid film 210 to form the carbon-containing film 215 (S105) are repeated to form a carbon-containing film 215 with a desired film thickness. An example of the processing apparatus 1 will be described with reference to FIG. 13. FIG. 13 is a diagram showing an example of the processing apparatus 1. Note that the process for forming the fluid film 210 (S102 to S104) and the process for forming the carbon-containing film 215 (S105) may be performed in the same processing container 2 or in different processing containers 2.

[0052] The processing apparatus 1 includes a substantially cylindrical airtight processing container 2. An exhaust chamber 21 is provided at the central portion of the bottom wall of the processing container 2.

[0053] The exhaust chamber 21 has, for example, a substantially cylindrical shape protruding downward. An exhaust flow path 22 is connected to the exhaust chamber 21, for example, on the side surface of the exhaust chamber 21.

[0054] An exhaust unit 24 is connected to the exhaust flow path 22 via a pressure adjustment unit 23. The pressure adjustment unit 23 includes a pressure adjustment valve such as a butterfly valve. The exhaust flow path 22 is configured to be able to decompress the inside of the processing container 2 by the exhaust unit 24. A transfer port 25 is provided on the side surface of the processing container 2. The transfer port 25 is configured to be openable and closable by a gate valve 26. The loading and unloading of the substrate W between the inside of the processing container 2 and a transfer chamber (not shown) are performed via the transfer port 25.

[0055] Inside the processing container 2, a mounting table 3 for holding the substrate W substantially horizontally is provided. The mounting table 3 is formed in a substantially circular shape in plan view and is supported by a support member 31. On the surface of the mounting table 3, a substantially circular recess 32 for mounting a substrate W with a diameter of, for example, 300 mm is formed. The recess 32 has an inner diameter slightly larger (for example, about 1 mm to 4 mm) than the diameter of the substrate W. The depth of the recess 32 is configured to be substantially the same as the thickness of the substrate W, for example. The mounting table 3 is formed of a ceramic material such as aluminum nitride (AlN), for example. Also, the mounting table 3 may be formed of a metal material such as nickel (Ni). Note that, instead of the recess 32, a guide ring for guiding the substrate W may be provided at the peripheral edge of the surface of the mounting table 3.

[0056] In the mounting table 3, for example, a grounded lower electrode 33 is embedded. Below the lower electrode 33, a temperature control mechanism 34 is embedded. The temperature control mechanism 34 adjusts the substrate W placed on the mounting table 3 to a set temperature (the first temperature in the step of forming the fluid film 210 and the second temperature in the step of modifying the fluid film 210 to form the carbon-containing film 215) based on a control signal from the control unit 9. When the entire mounting table 3 is made of metal, the entire mounting table 3 functions as a lower electrode, so the lower electrode 33 does not need to be embedded in the mounting table 3. In the mounting table 3, a plurality (for example, three) of lifting pins 41 for holding and lifting the substrate W placed on the mounting table 3 are provided. The material of the lifting pins 41 may be, for example, ceramics such as alumina (Al 2 O 3 ) or quartz. The lower end of the lifting pin 41 is attached to a support plate 42. The support plate 42 is connected to a lifting mechanism 44 provided outside the processing container 2 via a lifting shaft 43.

[0057] The lifting mechanism 44 is installed, for example, at the lower part of the exhaust chamber 21. The bellows 45 is provided between the opening 211 for the lifting shaft 43 formed on the lower surface of the exhaust chamber 21 and the lifting mechanism 44. The shape of the support plate 42 may be a shape that can be lifted and lowered without interfering with the support member 31 of the mounting table 3. The lifting pin 41 is configured to be liftable between the upper side and the lower side of the surface of the mounting table 3 by the lifting mechanism 44. In other words, the lifting pin 41 is configured to be able to protrude from the upper surface of the mounting table 3.

[0058] The gas supply unit 5 is provided on the top wall 27 of the processing container 2 via an insulating member 28. The gas supply unit 5 forms the upper electrode and faces the lower electrode 33. An RF power supply 51 is connected to the gas supply unit 5 via a matcher 511. The frequency of the RF power supply 51 is, for example, 13 MHz to 2.45 GHz. By supplying RF power from the RF power supply 51 to the upper electrode (gas supply unit 5), an RF electric field is configured to be generated between the upper electrode (gas supply unit 5) and the lower electrode 33. The gas supply unit 5 includes a hollow gas diffusion chamber 52. A number of holes 53 for dispersedly supplying the processing gas into the processing container 2 are, for example, evenly arranged on the lower surface of the gas diffusion chamber 52. Above the gas diffusion chamber 52 in the gas supply unit 5, for example, a heating mechanism 54 is embedded. The heating mechanism 54 is heated to a set temperature by being supplied with power from a power supply unit (not shown) based on a control signal from the control unit 9.

[0059] A gas supply path 6 is provided in the gas diffusion chamber 52. The gas supply path 6 communicates with the gas diffusion chamber 52. A gas source 61 is connected to the upstream side of the gas supply path 6 via a gas line 62. The gas source 61 includes, for example, a supply source of various processing gases, a mass flow controller, and a valve (all not shown). The various processing gases include the aforementioned raw material gas and reformed gas. The various processing gases are introduced from the gas source 61 into the gas diffusion chamber 52 via the gas line 62.

[0060] The processing device 1 includes a control unit 9. The control unit 9 is, for example, a computer and includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), an auxiliary storage device, and the like. The CPU operates based on a program stored in the ROM or the auxiliary storage device and controls the operation of the processing device 1. The control unit 9 may be provided inside the processing device 1 or outside it. When the control unit 9 is provided outside the processing device 1, the control unit 9 can control the processing device 1 by means of communication means such as wired or wireless communication.

[0061] Note that the processing device 1 shown in FIG. 13 has been described by taking a parallel plate type single-sheet device as an example, but it is not limited thereto. It may be a plasma processing device using microwaves or a plasma processing device using VHF, and is not limited thereto.

[0062] As described above, the substrate processing method for forming a carbon-containing film in the concave portion has been described. However, the present disclosure is not limited to the above-described embodiments and the like, and various modifications and improvements are possible within the scope of the gist of the present disclosure described in the claims.

Explanation of Reference Numerals

[0063] 200 Underlayer 210 Fluidity film 215 Carbon-containing film 300, 305 Oxygen 310 Silicon-containing gas 315 Reaction product

Claims

1. forming a flowable oligomer comprising carbon on a substrate; and exposing the substrate to a plasma of a modifying gas comprising carbon and hydrogen to modify the flowable oligomers to form a carbon-containing film. A method for processing a substrate.

2. The reformed gas includes a hydrocarbon gas and a hydrogen-containing gas. The method of claim 1 .

3. The ratio of the hydrogen-containing gas to the hydrocarbon gas in the reformed gas is within a range of 1:2 to 1:

200. The method for processing a substrate according to claim 2.

4. The hydrocarbon gas is any one of methane, ethane, propane, ethylene, propylene, and acetylene. The substrate processing method according to claim 2 .

5. The hydrogen-containing gas is H ２ That is, The substrate processing method according to claim 2 .

6. The modified gas further comprises a nitrogen-containing gas; The substrate processing method according to claim 2 .

7. The nitrogen-containing gas is N ２ , N.H. ３ , N ２ O, The substrate processing method according to claim 6 .

8. The modifying gas further comprises a silicon-containing gas. The substrate processing method according to claim 2 .

9. The silicon-containing gas is any one of silane, disilane, trisilane, tetrasilane, and higher order silanes. The substrate processing method according to claim 8 .

10. The modified gas further comprises an inert gas; The substrate processing method according to claim 2 .

11. The step of forming the flowable oligomers comprising carbon includes: supplying a source gas containing carbon, supplying a first power to generate plasma, and plasma-polymerizing the source gas containing carbon by a PECVD method to form the flowable oligomer containing carbon; The method of claim 1 .

12. The step of modifying the flowable oligomer to form the carbon-containing film comprises: supplying a modifying gas containing carbon and hydrogen, generating plasma of the modifying gas by supplying a second power greater than the first power, and exposing the substrate to the plasma of the modifying gas for modification; The method of claim 11.

13. forming the flowable oligomers comprising the carbon; and modifying the flowable oligomer to form the carbon-containing film. The method of claim 1 .

14. The carbon-containing film is any one of SiC, SiOC, SiOCN, SiCN, and BCN. The method of claim 1 .

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