Multilayer electronic component

Abstract

To provide a multilayer electronic component with an improved moisture-resistance reliability and mechanical characteristic.SOLUTION: The multilayer electronic component includes: a body 110 having a capacitive formation unit Ac and cover parts 112 and 113, the capacitive formation unit having a dielectric layer 111 and internal electrodes 121 and 122 arranged alternately in the first direction with the dielectric layer, and the cover parts being arranged in both end surfaces of the capacitive formation unit; an external electrode arranged on the body; and a side margin part 114, 115 arranged in both end surfaces of the body in a third direction. The cover part and the side margin part include titanium (Ti) and gallium (Ga). The ratio (B / A) of the number of moles (B) of the gallium (Ga) per 100 moles of the titanium (Ti) contained in the side margin part to the number of moles (A) of the gallium (Ga) per 100 moles of the titanium (Ti) contained in the cover parts 112 and 113 satisfies 1.5≤B / A.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] The present invention relates to a multilayer electronic component.

Background Art

[0002] A multilayer ceramic capacitor (MLCC), which is one type of multilayer electronic component, is a chip-type capacitor that is mounted on printed circuit boards of various electronic products such as video devices like liquid crystal display (LCD) devices and plasma display panel (PDP) panels, computers, smartphones, and mobile phones, and plays a role in charging or discharging electricity.

[0003] Such a multilayer ceramic capacitor can be used as a component of various electronic devices due to its advantages of being small in size while ensuring high capacitance and being easy to mount. As various electronic devices such as computers and mobile devices are miniaturized and have increased output power, the requirements for miniaturization and high capacitance of multilayer ceramic capacitors are increasing.

[0004] As miniaturization and high capacitance progress, the need to protect the region forming the capacitance is increasing. In this regard, this has been improved by adding a margin region surrounding the region forming the capacitance. However, by continuously changing the structural design to achieve miniaturization and high capacitance, the region forming the capacitance becomes larger, and the margin region protecting the region forming the capacitance decreases, which may cause problems such as the moisture resistance reliability and strength of the multilayer ceramic capacitor becoming vulnerable.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] One of the several problems to be solved by the present invention is to provide a laminated electronic component with improved moisture resistance reliability.

[0007] One of the several problems to be solved by the present invention is to provide a laminated electronic component with improved mechanical properties.

[0008] However, several problems to be solved by the present invention are not limited to the above-described content, and can be more easily understood in the process of explaining specific embodiments of the present invention.

Means for Solving the Problems

[0009] A laminated electronic component according to an embodiment of the present invention includes a capacitance forming portion including a dielectric layer and internal electrodes alternately arranged with the dielectric layer in a first direction, and cover portions arranged on both end-surfaces in the first direction of the capacitance forming portion, and includes a main body including a first surface and a second surface facing each other in the first direction, a third surface and a fourth surface connected to the first surface and the second surface and facing each other in a second direction, a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface and the fourth surface and facing each other in a third direction, external electrodes arranged on the third surface and the fourth surface, and side margin portions arranged on the fifth surface and the sixth surface. The cover portions and the side margin portions contain titanium (Ti) and gallium (Ga), and a ratio (B / A) of the number of moles (B) of titanium (Ti) per 100 moles of gallium (Ga) contained in the side margin portion to the number of moles (A) of titanium (Ti) per 100 moles of gallium (Ga) contained in the cover portion can satisfy 1.5 ≦ B / A.

Effects of the Invention

[0010] One of several effects of the present invention is that the moisture resistance reliability of the laminated electronic component is improved.

[0011] One of the effects of the present invention is that the mechanical properties of the multilayer electronic component have been improved.

[0012] However, the various and beneficial advantages and effects of the present invention are not limited to the above-described content, and can be more easily understood in the process of describing the specific embodiments of the present invention.

Brief Description of the Drawings

[0013]

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Figure 13

Mode for Carrying Out the Invention

[0014] Hereinafter, embodiments of the present invention will be described with reference to specific embodiments and the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. Also, the embodiments of the present invention are provided to more fully explain the present invention to an ordinary technician. Therefore, the shape, size, etc. of the elements in the drawings can be exaggerated for a clearer explanation, and the elements indicated by the same reference numerals in the drawings are the same elements.

[0015] And, in order to clearly explain the present invention in the drawings, parts not related to the explanation are omitted, and the sizes and thicknesses of each configuration shown in the drawings are arbitrarily shown for the convenience of explanation, so the present invention is not necessarily limited to what is shown in the drawings. Note that for components having the same function within the scope of the same concept, the same reference numerals are used for explanation. Further, throughout the specification, when a certain part says that a certain component "includes", this means that other components can be further included, rather than excluding other components, unless otherwise stated to the contrary.

[0016] In the figure, the first direction can be defined as the stacking direction or the thickness T direction, the second direction as the length L direction, and the third direction as the width W direction.

[0017] Stacked electronic component FIG. 1 schematically shows a perspective view of a stacked electronic component according to an embodiment of the present invention, FIG. 2 schematically shows a perspective view of the stacked electronic component in FIG. 1 excluding the external electrodes, FIG. 3 schematically shows a perspective view of the stacked electronic component in FIG. 1 excluding the external electrodes and the side margin portion, FIG. 4 schematically shows a separated perspective view showing the stacked structure of the internal electrodes, FIG. 5 schematically shows a cross-sectional view taken along the line I-I' in FIG. 1, and FIG. 6 schematically shows a cross-sectional view taken along the line II-II' in FIG. 1.

[0018] Hereinafter, with reference to FIGS. 1 to 6, a multilayer electronic component according to an embodiment of the present invention will be described in detail. However, although a multilayer ceramic capacitor will be described as an example of the multilayer electronic component, the present invention can also be applied to various electronic products using a dielectric composition, such as an inductor, a piezoelectric element, a varistor, or a thermistor.

[0019] A multilayer electronic component 100 according to an embodiment of the present invention includes a capacitance forming portion Ac including a dielectric layer 111 and internal electrodes 121 and 122 alternately arranged with the dielectric layer 111 in a first direction, and cover portions 112 and 113 arranged on both end surfaces in the first direction of the capacitance forming portion Ac. The multilayer electronic component 100 includes a main body 110 including a first surface 1 and a second surface 2 facing each other in the first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and facing each other in a second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1, the second surface 2, the third surface 3, and the fourth surface 4 and facing each other in a third direction, external electrodes arranged on the third surface 3 and the fourth surface 4, and side margin portions 114 and 115 arranged on the fifth surface 5 and the sixth surface 6. The cover portions 112 and 113 and the side margin portions 114 and 115 contain titanium (Ti) and gallium (Ga), and a ratio (B / A) of the number of moles (B) of titanium (Ti) per 100 moles of gallium (Ga) contained in the side margin portions 114 and 115 to the number of moles (A) of titanium (Ti) per 100 moles of gallium (Ga) contained in the cover portions 112 and 113 can satisfy 1.5 ≦ B / A.

[0020] The main body 110 may have the dielectric layer 111 and the internal electrodes 121 and 122 alternately laminated.

[0021] More specifically, the main body 110 can include a capacitance forming portion Ac that is disposed inside the main body 110 and forms capacitance by including a first internal electrode 121 and a second internal electrode 122 that are alternately arranged so as to face each other with the dielectric layer 111 interposed therebetween.

[0022] There is no particular limitation on the specific shape of the main body 110. However, as shown in the figure, the main body 110 can be formed in a hexahedron shape or a shape similar thereto. Due to the shrinkage of the ceramic particles contained in the main body 110 during the firing process, the main body 110 does not have a hexahedron shape with perfect straight lines, but can have a substantially hexahedron shape.

[0023] The main body 110 can have a first surface 1 and a second surface 2 that face each other in a first direction, a third surface 3 and a fourth surface 4 that are connected to the first surface 1 and the second surface 2 and face each other in a second direction, and a fifth surface 5 and a sixth surface 6 that are connected to the first surface 1, the second surface 2, the third surface 3, and the fourth surface 4 and face each other in a third direction.

[0024] The plurality of dielectric layers 111 forming the main body 110 are in a fired state, and the boundaries between adjacent dielectric layers 111 can be integrated to such an extent that they are difficult to confirm without using a scanning electron microscope (SEM).

[0025] The raw material for forming the dielectric layer 111 is not limited as long as sufficient capacitance can be obtained. Generally, perovskite (ABO 3 )-based materials can be used. For example, barium titanate-based materials, lead composite perovskite-based materials, or strontium titanate-based materials can be used. The barium titanate-based material can contain BaTiO 3 -based ceramic particles. As examples of the ceramic particles, BaTiO 3 , BaTiO 3 in which Ca (calcium), Zr (zirconium), etc. are partially solid-solved (Ba 1-x Ca x )TiO 3 (0 < x < 1), Ba(Ti 1-y Ca y )O 3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O 3 (0 < x < 1, 0 < y < 1) or Ba(Ti 1-y Zr y)O 3 Examples include (0 < y < 1).

[0026] In addition, as raw materials for forming the dielectric layer 111, various ceramic additives, organic solvents, binders, dispersants, etc. can be added to particles such as barium titanate (BaTiO 3 ).

[0027] Note that since the dielectric layer 111 can be formed using a dielectric material such as barium titanate (BaTiO 3 ), it can contain a dielectric fine structure after firing. The dielectric fine structure can include a plurality of crystal grains, grain boundaries disposed between the adjacent crystal grains, and triple points disposed at points where three or more of the grain boundaries meet, and can include a plurality of each.

[0028] In the present invention, in order to distinguish from the dielectric layers included in the cover portions 112 and 113 and the side margin portions 114 and 115 described later, the dielectric layer 111 included in the capacitance forming portion Ac can be defined as the first dielectric layer 111, the dielectric layer included in the cover portions 112 and 113 can be defined as the second dielectric layer, and the dielectric layer included in the side margin portions 114 and 115 can be defined as the third dielectric layer.

[0029] In one embodiment of the present invention, the first dielectric layer 111 of the capacitance forming portion Ac may not contain gallium (Ga).

[0030] Here, the fact that the first dielectric layer 111 of the capacitance forming portion Ac does not contain gallium Ga can mean that the dielectric slurry or dielectric green sheet state does not contain gallium (Ga) before firing the first dielectric layer 111, and can mean that the first dielectric layer 111 located in the central region of the capacitance forming portion Ac does not contain gallium (Ga).

[0031] That is, as the firing process such as high-temperature heat treatment proceeds, gallium (Ga) contained in the cover portions 112 and 113 or the side margin portions 114 and 115 described later can diffuse into the region of the first dielectric layer 111 of the capacitance forming portion Ac adjacent to the cover portions 112 and 113 or the side margin portions 114 and 115 of the capacitance forming portion Ac. However, it can be meant that the first dielectric layer 111 located in the central region of the capacitance forming portion Ac does not contain gallium (Ga).

[0032] For example, when observing a 10 μm × 10 μm region located at the center in the first and second directions with reference to the cross-sections in the first and second directions at the center in the third direction of the main body 110 including the first dielectric layer 111 in the energy dispersive X-ray spectrometer (EDS) mode of a scanning electron microscope (SEM), it can be meant that gallium (Ga) is not detected, or the detected gallium (Ga) is less than 0.1 at%.

[0033] The thickness td of the first dielectric layer 111 does not need to be particularly limited.

[0034] However, in order to achieve a higher capacitance of the multilayer electronic component, the thickness of the first dielectric layer 111 may be 3.0 μm or less. In order to more easily achieve miniaturization and higher capacitance of the multilayer electronic component, the thickness of the first dielectric layer 111 may be 1.0 μm or less, preferably 0.6 μm or less, and more preferably 0.4 μm or less.

[0035] Here, the thickness td of the first dielectric layer 111 can mean the thickness td of the first dielectric layer 111 disposed between the first internal electrode 121 and the second internal electrode 122.

[0036] On the one hand, the thickness td of the first dielectric layer 111 can represent the size of the first dielectric layer 111 in the first direction. Also, the thickness td of the first dielectric layer 111 can represent the average thickness td of the first dielectric layer 111, and can represent the average size of the first dielectric layer 111 in the first direction.

[0037] The average size of the first dielectric layer 111 in the first direction can be measured by scanning an image of the cross-section of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one first dielectric layer 111 in the first direction can represent the average value calculated by measuring the size in the first direction at 30 equally spaced points in the second direction of one first dielectric layer 111 in the scanned image. The 30 equally spaced points can be specified by the capacitance forming portion Ac. Also, when the measurement of such an average value is extended to 10 first dielectric layers 111 to measure the average value, the average size of the first dielectric layer 111 in the first direction can be further generalized.

[0038] The internal electrodes 121 and 122 may be alternately laminated with the first dielectric layer 111.

[0039] The internal electrodes 121 and 122 can include a first internal electrode 121 and a second internal electrode 122. The first internal electrode 121 and the second internal electrode 122 are alternately arranged so as to face each other with the dielectric layer 111 constituting the main body 110 interposed therebetween, and can be respectively exposed on the third surface 3 and the fourth surface 4 of the main body 110.

[0040] More specifically, the first internal electrode 121 can be separated from the fourth surface 4 and exposed through the third surface 3, and the second internal electrode 122 can be separated from the third surface 3 and exposed through the fourth surface 4. A first external electrode 131 can be arranged on the third surface 3 of the main body 110 and connected to the first internal electrode 121, and a second external electrode 132 can be arranged on the fourth surface 4 of the main body 110 and connected to the second internal electrode 122.

[0041] That is, the first internal electrode 121 is not connected to the second external electrode 132 but can be connected to the first external electrode 131, and the second internal electrode 122 is not connected to the first external electrode 131 but can be connected to the second external electrode 132. At this time, the first internal electrode 121 and the second internal electrode 122 can be electrically separated from each other by the first dielectric layer 111 disposed therebetween.

[0042] On the other hand, the main body 110 can be formed by alternately laminating a ceramic green sheet printed with the first internal electrode 121 and a ceramic green sheet printed with the second internal electrode 122 and then firing them.

[0043] The materials for forming the internal electrodes 121 and 122 are not particularly limited, and materials having excellent electrical conductivity can be used. For example, the internal electrodes 121 and 122 can contain one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0044] Also, the internal electrodes 121 and 122 can be formed by printing a conductive paste for internal electrodes containing one or more of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof on a ceramic green sheet. As the printing method of the conductive paste for internal electrodes, a screen printing method, a gravure printing method, or the like can be used, but the present invention is not limited thereto.

[0045] On the other hand, the thickness te of the internal electrodes 121 and 122 does not need to be particularly limited.

[0046] However, in order to achieve a higher capacitance of the multilayer electronic component, the thickness of the internal electrodes 121 and 122 may be 1.0 μm or less, and in order to more easily achieve miniaturization and higher capacitance of the multilayer electronic component, the thickness of the internal electrodes 121 and 122 may be 0.6 μm or less, and more preferably 0.4 μm or less.

[0047] Here, the thickness te of the internal electrodes 121 and 122 can represent the size of the internal electrodes 121 and 122 in the first direction. Also, the thickness te of the internal electrodes 121 and 122 can represent the average thickness te of the internal electrodes 121 and 122, and can represent the average size of the internal electrodes 121 and 122 in the first direction.

[0048] The average size of the internal electrodes 121 and 122 in the first direction can be measured by scanning an image of the cross-sections in the first and second directions of the main body 110 with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average size of one internal electrode in the first direction can be the average value calculated by measuring the size of one internal electrode in the first direction at 30 equally spaced points in the second direction in the scanned image. The 30 equally spaced points can be specified in the capacitance forming portion Ac. Also, when the measurement of such an average value is extended to 10 internal electrodes 121 and 122 to measure the average value, the average size of the internal electrodes 121 and 122 in the first direction can be further generalized.

[0049] On the other hand, in one embodiment of the present invention, the average thickness td of at least one of the plurality of first dielectric layers 111 and the average thickness te of at least one of the plurality of internal electrodes 121 and 122 can satisfy 2×te < td.

[0050] In other words, the average thickness td of one of the first dielectric layers 111 may be even greater than twice the average thickness te of one of the internal electrodes 121 and 122. Preferably, the average thickness td of the plurality of first dielectric layers 111 may be even greater than twice the average thickness te of the plurality of internal electrodes 121 and 122.

[0051] Generally, for electronic components for high-voltage electrical equipment, the main issue is the reliability problem due to the decrease in the breakdown voltage (BDV) in a high-voltage environment.

[0052] Therefore, in order to prevent the breakdown voltage from decreasing in a high-voltage environment, by making the average thickness td of the first dielectric layer 111 greater than twice the average thickness te of the internal electrodes 121 and 122, the thickness of the dielectric layer, which is the distance between the internal electrodes, can be increased, and the breakdown voltage characteristics can be improved.

[0053] When the average thickness td of the first dielectric layer 111 is less than or equal to twice the average thickness te of the internal electrodes 121 and 122, the average thickness of the dielectric layer, which is the distance between the internal electrodes, becomes thin, and the breakdown voltage may decrease, and there is a possibility of a short circuit occurring between the internal electrodes.

[0054] In a high-voltage electronic component, the average thickness te of the internal electrode may be 1 μm or less, and the average thickness td of the dielectric layer may be 3.0 μm or less, but it is not necessarily limited to this.

[0055] On the other hand, the main body 110 can include cover portions 112 and 113 disposed on both end-surfaces in the first direction of the capacitance forming portion Ac.

[0056] Specifically, it can include a first cover portion 112 disposed on one surface in the first direction of the capacitance forming portion Ac, and a second cover portion 113 disposed on the other surface in the first direction of the capacitance forming portion Ac. More specifically, it can include an upper cover portion 112 disposed on the upper part in the first direction of the capacitance forming portion Ac, and a lower cover portion 113 disposed on the lower part in the first direction of the capacitance forming portion Ac.

[0057] The upper cover portion 112 and the lower cover portion 113 can be formed by laminating a single second dielectric layer or two or more second dielectric layers in the first direction on the upper and lower surfaces of the capacitance forming portion Ac, and can basically play a role in preventing damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0058] The upper cover portion 112 and the lower cover portion 113 do not include the internal electrodes 121 and 122 and can contain the same dielectric material as the first dielectric layer 111. That is, the second dielectric layer of the upper cover portion 112 and the lower cover portion 113 can contain a ceramic material. For example, it can contain a barium titanate (BaTiO 3 )-based ceramic material.

[0059] However, the composition of the second dielectric layer may be different from the composition of the first dielectric layer 111. For example, the second dielectric layer can contain gallium (Ga).

[0060] That is, the cover portions 112 and 113 can contain gallium (Ga).

[0061] When the cover portions 112 and 113 contain gallium (Ga), the firing temperature can be lowered and the number of pores P can be decreased. As a result, the density of the cover portions 112 and 113 can be improved, and the moisture resistance reliability can be improved. Also, the generation of cracks can be suppressed even when receiving an external impact, and the mechanical properties can be improved.

[0062] Also, since the second dielectric layer can be formed using a dielectric material such as barium titanate (BaTiO 3 ), it can contain a dielectric microstructure after firing. The dielectric microstructure can include a plurality of crystal grains, grain boundaries disposed between the adjacent crystal grains, and triple points disposed at locations where three or more of the grain boundaries meet, and can include a plurality of each.

[0063] On the other hand, the thickness tc of the cover portions 112 and 113 does not need to be particularly limited.

[0064] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the thickness tc of the cover portions 112 and 113 may be 100 μm or less, preferably 30 μm or less, and in the case of ultra-small products, more preferably 20 μm or less.

[0065] Here, the thickness tc of the cover parts 112 and 113 can represent the size of the cover parts 112 and 113 in the first direction. Also, the thickness tc of the cover parts 112 and 113 represents the average thickness tc of the cover parts 112 and 113, and can represent the average size of the cover parts 112 and 113 in the first direction.

[0066] The average size of the cover parts 112 and 113 in the first direction can be measured by scanning an image of the cross-sections of the main body 110 in the first and second directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in an image of one scanned cover part, it can be the average value calculated by measuring the size in the first direction at 30 equally spaced points in the second direction.

[0067] Note that the average size of the cover part in the first direction measured by the above method can have substantially the same size as the average size of the cover part in the cross-sections of the main body 110 in the first and third directions.

[0068] On the other hand, the stacked electronic component 100 can include side margin parts 114 and 115 disposed on both end-surfaces of the main body 110 in the third direction.

[0069] More specifically, the side margin parts 114 and 115 can include a first side margin part 114 disposed on the fifth surface 5 of the main body 110 and a second side margin part 115 disposed on the sixth surface 6. That is, the side margin parts 114 and 115 may be disposed on both end-surfaces of the main body 110 in the third direction.

[0070] As shown in the figure, the side margin parts 114 and 115 can represent the region between the interfaces of both ends of the first internal electrode 121 and the second internal electrode 122 in the third direction and the main body 110, based on the cross-sections of the main body 110 in the first and third directions.

[0071] The side margin portions 114 and 115 can basically serve to prevent damage to the internal electrodes 121 and 122 due to physical or chemical stress.

[0072] Except for the locations where the side margin portions 114 and 115 are formed on the ceramic green sheet that becomes the first dielectric layer 111, conductive paste for the internal electrodes is applied to form the internal electrodes 121 and 122. In order to suppress the step difference caused by the internal electrodes 121 and 122, after cutting so that the internal electrodes 121 and 122 after lamination are exposed on the fifth surface 5 and the sixth surface 6 of the main body 110, a single third dielectric layer or two or more third dielectric layers can also be formed by laminating in the third direction on both end - surfaces in the third direction of the capacitance forming portion Ac.

[0073] The first side margin portion 114 and the second side margin portion 115 do not include the internal electrodes 121 and 122 and can contain the same dielectric material as the first dielectric layer 111. That is, the third dielectric layer of the first side margin portion 114 and the second side margin portion 115 can contain a ceramic material. For example, it can contain a barium titanate (BaTiO 3 ) - based ceramic material.

[0074] However, the composition of the third dielectric layer may be different from the composition of the first dielectric layer 111. For example, the third dielectric layer can contain gallium (Ga).

[0075] That is, the side margin portions 114 and 115 can contain gallium (Ga).

[0076] When the side margin portions 114 and 115 contain gallium (Ga), the firing temperature can be lowered and the number of pores P can be reduced. As a result, the density of the side margin portions 114 and 115 can be improved, and the moisture - resistance reliability can be improved. Also, the generation of cracks can be suppressed even when receiving an external impact, and the mechanical properties can be improved.

[0077] In addition, since the third dielectric layer can be formed using a dielectric material such as barium titanate (BaTiO 3 ), it can contain a dielectric microstructure after firing. The dielectric microstructure can include a plurality of crystal grains, grain boundaries disposed between the adjacent crystal grains, and triple points disposed at points where three or more of the grain boundaries meet, and each can include a plurality of them.

[0078] On the other hand, the widths wm of the first side margin portion 114 and the second side margin portion 115 do not need to be particularly limited.

[0079] However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component 100, the widths wm of the first side margin portion 114 and the second side margin portion 115 may be 100 μm or less, preferably 30 μm or less, and in the case of ultra-small products, more preferably 20 μm or less.

[0080] Here, the widths wm of the side margin portions 114 and 115 can mean the sizes of the side margin portions 114 and 115 in the third direction. Also, the widths wm of the side margin portions 114 and 115 can mean the average widths wm of the side margin portions 114 and 115, and can mean the average sizes of the side margin portions 114 and 115 in the third direction.

[0081] The average size of the side margin portions 114 and 115 in the third direction can be measured by scanning an image of the cross-section of the main body 110 in the first and third directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, in an image obtained by scanning one side margin portion, it can mean the average value calculated by measuring the sizes in the third direction at 10 equally spaced points in the first direction.

[0082] Hereinafter, an embodiment of the present invention will be described more specifically.

[0083] In one embodiment of the present invention, the ratio (B / A) of the number of moles (B) of gallium (Ga) to the number of moles (A) of titanium (Ti) contained in the side margin portions 114 and 115 to the number of moles of titanium (Ti) contained in the cover portions 112 and 113 can satisfy 1.5 ≦ B / A.

[0084] When the ratio (B / A) of the number of moles of gallium (Ga) to 100 moles of titanium (Ti) contained in the cover portions 112 and 113 and the side margin portions 114 and 115 satisfies 1.5 ≦ B / A, the firing temperature of the cover portions 112 and 113 and the side margin portions 114 and 115 can be lowered to reduce the number of pores P. As a result, the density of the cover portions 112 and 113 and the side margin portions 114 and 115 can be improved, and the moisture resistance reliability can be improved. In addition, the generation of cracks can be suppressed even when the component is subjected to an external impact, and the mechanical properties can be improved.

[0085] In addition, since gallium (Ga) enables low-temperature firing, abnormal grain growth of crystal grains can be suppressed, the size of crystal grains can be reduced, uniform growth can be enabled, and the distribution degree of crystal grain sizes can be improved. As a result, the number of pores P can be reduced, and the breakdown voltage (BDV) due to the electric field concentration phenomenon can be improved.

[0086] On the other hand, if it is for controlling the number of pores P, the upper limit value of the ratio (B / A) of gallium (Ga) contained in the cover portions 112 and 113 and the side margin portions 114 and 115 is not particularly limited, but can be 10.0 or less. In other words, it can satisfy B / A ≦ 10.0.

[0087] When the ratio (B / A) of the number of moles of gallium (Ga) to 100 moles of titanium (Ti) contained in the cover portions 112 and 113 and the side margin portions 114 and 115 is B / A < 1.5, the target number of pores P may increase, the moisture resistance reliability may deteriorate, and the mechanical strength may decrease, possibly failing to sufficiently protect the internal electrodes 121 and 122 that form the capacitance.

[0088] At this time, the number of moles (A) of gallium (Ga) relative to 100 moles of titanium (Ti) contained in the cover parts 112 and 113 may be more than 0 mole and 1.0 mole or less. In other words, 0 mole < A ≤ 1.0 mole can be satisfied.

[0089] When the number of moles (A) of gallium (Ga) relative to 100 moles of titanium (Ti) contained in the cover parts 112 and 113 satisfies 0 mole < A ≤ 1.0 mole, the firing temperature of the cover parts 112 and 113 can be decreased and the number of pores P can be reduced. As a result, the density of the cover parts 112 and 113 can be improved and the moisture resistance reliability can be improved. Also, generation of cracks can be suppressed even when receiving an external impact, and mechanical properties can be improved.

[0090] On the other hand, when the number of moles (A) of gallium (Ga) relative to 100 moles of titanium (Ti) contained in the cover parts 112 and 113 exceeds 1.0 mole (1.0 mole < A), there may be a negative effect that aggregates are generated due to excessive addition of gallium (Ga), the breakdown voltage (BDV) decreases, the growth of crystal grains is excessively suppressed, the density decreases, and the mechanical strength decreases.

[0091] Note that the number of moles (B) of gallium (Ga) relative to 100 moles of titanium (Ti) contained in the side margin parts 114 and 115 may be more than 0 mole and 1.0 mole or less. In other words, 0 mole < B ≤ 1.0 mole can be satisfied.

[0092] When the number of moles (B) of gallium (Ga) relative to 100 moles of titanium (Ti) contained in the side margin parts 114 and 115 satisfies 0 mole < B ≤ 1.0 mole, the firing temperature of the side margin parts 114 and 115 can be decreased and the number of pores P can be reduced. As a result, the density of the side margin parts 114 and 115 can be improved and the moisture resistance reliability can be improved. Also, generation of cracks can be suppressed even when receiving an external impact, and mechanical properties can be improved.

[0093] On the other hand, when the number of moles of gallium (Ga) (B) relative to 100 moles of titanium (Ti) contained in the side margin portions 114 and 115 exceeds 1.0 mole (1.0 mole < B), aggregates may be generated due to the excessive addition of gallium (Ga), resulting in a decrease in the breakdown voltage (BDV), or the growth of crystal grains may be excessively suppressed, leading to a decrease in density and a decrease in mechanical strength.

[0094] In one embodiment of the present invention, the cover portions 112 and 113 can include a secondary phase containing gallium (Ga), and at this time, the secondary phase can be arranged at the triple points of the cover portions 112 and 113.

[0095] Since the secondary phase contained in the cover portions 112 and 113 contains gallium (Ga), the number of pores P in the cover portions 112 and 113 decreases, the density improves, the moisture resistance reliability improves, the generation of cracks can be suppressed even when receiving an external impact, and the mechanical properties can be improved.

[0096] Also, the side margin portions 114 and 115 can include a secondary phase containing gallium (Ga), and at this time, the secondary phase can be arranged at the triple points of the side margin portions 114 and 115.

[0097] Since the secondary phase contained in the side margin portions 114 and 115 contains gallium (Ga), the number of pores P in the side margin portions 114 and 115 decreases, the density improves, the moisture resistance reliability can be improved, the generation of cracks can be suppressed even when receiving an external impact, and the mechanical properties can be improved.

[0098] In the present invention, the "secondary phase" refers to a perovskite-based (ABO 3Particles having a composition different from that of the dielectric particles or segregation can be meant. Specifically, the atomic percentage (at%) of barium (Ba) in the secondary phase particles is more than 0 at% and 30.0 at% or less, the atomic percentage (at%) of titanium (Ti) in the secondary phase particles is more than 0 at% and 30.0 at% or less, the atomic percentage (at%) of silicon (Si) in the secondary phase particles is more than 0 at% and 15.0 at% or less, and the atomic percentage (at%) of aluminum (Al) in the secondary particles is more than 0 at% and 15.0 at% or less. Particles satisfying all of the above atomic percentage (at%) conditions of barium (Ba), titanium (Ti), silicon (Si), and aluminum (Al) can be meant.

[0099] In the present invention, as an example of a more specific method for measuring the content of elements contained in each component of the multilayer electronic component 100, in the case of the destructive method, the components can be analyzed using the EDS mode of a scanning electron microscope (SEM), the EDS mode of a transmission electron microscope (TEM), or the EDS mode of a scanning transmission electron microscope (STEM). First, an analysis sample thinned using a focused ion beam (FIB) equipment is prepared in a region including a dielectric microstructure in a cross-section of the sintered body or the side margin portion. Then, the damaged layer on the surface is removed from the thinned sample using xenon (Xe) or argon (Ar) ion milling, and then, each component to be measured is mapped in the image obtained using SEM-EDS, TEM-EDS, or STEM-EDS for qualitative / quantitative analysis. In this case, the qualitative / quantitative analysis graph of each component can also be represented by converting it into the mass percentage (wt%), atomic percentage (at%), or molar percentage (mol%) of each element.

[0100] As yet another method, the chip is pulverized to select regions containing the dielectric microstructure, and the components of the regions containing the dielectric microstructure thus selected can be analyzed using devices such as an inductively coupled plasma optical emission spectrometer (ICP-OES) and an inductively coupled plasma mass spectrometer (ICP-MS).

[0101] And in one embodiment of the present invention, the secondary phase contained in the cover portions 112 and 113 can include glass, for example, can include silicon (Si)-based glass, or can include aluminum (Al)-silicon (Si)-based glass.

[0102] Since the secondary phase contained in the cover portions 112 and 113 includes glass, the formation of the secondary phase by glass becomes easier, and it can further include an element other than gallium (Ga), for example, silicon (Si), or can further include aluminum (Al). Elements other than gallium (Ga), such as rare earth elements like dysprosium (Dy) and sub-components such as magnesium (Mg) and tin (Sn) elements, do not dissolve in the barium titanate (BaTiO 3 )-based dielectric material and can be contained in the secondary phase.

[0103] Also, the secondary phase contained in the side margin portions 114 and 115 can include glass, for example, can include silicon (Si)-based glass, or can include aluminum (Al)-silicon (Si)-based glass.

[0104] Since the secondary phase contained in the side margin portions 114 and 115 includes glass, the formation of the secondary phase by glass becomes easier, and it can further include an element other than gallium (Ga), for example, silicon (Si), or can further include aluminum (Al). Elements other than gallium (Ga), such as rare earth elements like dysprosium (Dy) and tin (Sn) elements, do not dissolve in the barium titanate (BaTiO 3 )-based dielectric material and can be contained in the secondary phase.

[0105] In one embodiment of the present invention, the crystal grain boundaries included in the cover portions 112 and 113 can contain gallium (Ga).

[0106] When the crystal grain boundaries of the cover portions 112 and 113 contain gallium (Ga), the firing temperature can be lowered and the number of pores P can be reduced. As a result, the density of the cover portions 112 and 113 can be improved and the moisture resistance reliability can be improved. Also, the generation of cracks can be suppressed even when the cover portions 112 and 113 are subjected to an external impact, and the mechanical properties can be improved.

[0107] At this time, the crystal grain boundaries of the cover portions 112 and 113 can include a region where the atomic percentage (at%) of gallium (Ga) is 2.0 at% or more. The upper limit value is not particularly limited, but for example, it can be 4.0 at% or less.

[0108] When the crystal grain boundaries of the cover portions 112 and 113 include a region where the atomic percentage (at%) of gallium (Ga) is 2.0 at% or more, the firing temperature can be lowered and the number of pores P can be reduced. As a result, the density of the cover portions 112 and 113 can be improved and the moisture resistance reliability can be improved. Also, the generation of cracks can be suppressed even when the cover portions 112 and 113 are subjected to an external impact, and the mechanical properties can be improved.

[0109] Also, the average atomic percentage (at%) of gallium (Ga) contained in the crystal grain boundaries of the cover portions 112 and 113 may be 0.5 at% or more and 2.0 at% or less.

[0110] When the average atomic percentage (at%) of gallium (Ga) contained in the crystal grain boundaries of the cover portions 112 and 113 satisfies 0.5 at% or more and 2.0 at% or less, the firing temperature can be lowered and the number of pores P can be reduced. As a result, the density of the cover portions 112 and 113 can be improved and the moisture resistance reliability can be improved. Also, the generation of cracks can be suppressed even when the cover portions 112 and 113 are subjected to an external impact, and the mechanical properties can be improved.

[0111] Here, the method for measuring the atomic percentage (at%) of gallium (Ga) contained in the grain boundaries of the cover parts 112 and 113 is not particularly limited, but as described above, the EDS analysis method can be used. The EDS analysis position can be determined by measuring the points of the grain boundaries or by using a line-profile in a direction perpendicular to the grain boundaries, and the atomic percentage (at%) of gallium (Ga) can be confirmed from the measured line-profile.

[0112] Similarly, in one embodiment of the present invention, the grain boundaries contained in the side margin parts 114 and 115 can contain gallium (Ga).

[0113] When the grain boundaries of the side margin parts 114 and 115 contain gallium (Ga), the firing temperature can be lowered and the number of pores P can be reduced. As a result, the density of the side margin parts 114 and 115 can be improved and the moisture resistance reliability can be improved. In addition, the generation of cracks can be suppressed even when receiving an external impact, and the mechanical properties can be improved.

[0114] At this time, the grain boundaries of the side margin parts 114 and 115 can include a region where the atomic percentage (at%) of gallium (Ga) is 2.0 at% or more, and the upper limit value is not particularly limited, but can be, for example, 4.0 at% or less.

[0115] When the grain boundaries of the side margin parts 114 and 115 include a region where the atomic percentage (at%) of gallium (Ga) is 2.0 at% or more, the firing temperature can be lowered and the number of pores P can be reduced. As a result, the density of the side margin parts 114 and 115 can be improved and the moisture resistance reliability can be improved. In addition, the generation of cracks can be suppressed even when receiving an external impact, and the mechanical properties can be improved.

[0116] Also, the average atomic percentage (at%) of gallium (Ga) contained in the grain boundaries of the side margin portions 114 and 115 may be 0.5 at% or more and 2.0 at% or less.

[0117] By satisfying that the average atomic percentage (at%) of gallium (Ga) contained in the grain boundaries of the side margin portions 114 and 115 is 0.5 at% or more and 2.0 at% or less, the firing temperature can be decreased and the number of pores P can be reduced. As a result, the density of the side margin portions 114 and 115 can be improved and the moisture resistance reliability can be improved. Also, the generation of cracks can be suppressed even when receiving an external impact, and the mechanical properties can be improved.

[0118] Here, the method for measuring the atomic percentage (at%) of gallium (Ga) contained in the grain boundaries of the side margin portions 114 and 115 is not particularly limited, but as described above, the EDS analysis method can be used. The EDS analysis position can be determined by measuring the points of the grain boundaries or by measuring a line-profile in a direction perpendicular to the grain boundaries, and the atomic percentage (at%) of gallium (Ga) among the elements of the measured line-profile can be confirmed.

[0119] In one embodiment of the present invention, the number of pores P contained in the cover portions 112 and 113 may be 0.30 or less based on a cross-section, preferably 2 the number of pores P contained in 1 μm may be 0.25 or less, and more preferably 2 the number of pores P contained in 1 μm may be 0.21 or less. 2

[0120] The method for measuring the number of pores P is not particularly limited. Taking FIG. 6 as an example, when explained, based on the cross-sections in the first direction and the third direction of the stacked electronic component 100, after taking an image of the M1 region including the cross-section of the first cover portion 112 through a scanning electron microscope (SEM), the number of pores P can be measured by a program capable of measuring the pores P.

[0121] And in one embodiment of the present invention, the side margin portions 114, 115 may have 0.22 or less pores P included in a cross-section per 1 μm 2 and preferably may have 0.21 or less pores P included in a cross-section per 1 μm 2 and may have 0.21 or less pores P included in a cross-section per 1 μm.

[0122] The method for measuring the number of pores P is not particularly limited. Taking FIG. 6 as an example, when explained, based on the cross-sections in the first direction and the third direction of the stacked electronic component 100, after taking an image of the M2 region including the cross-section of the second side margin portion 115 through a scanning electron microscope (SEM), the number of pores P can be measured by a program capable of measuring the pores P.

[0123] In one embodiment of the present invention, the structure in which the ceramic electronic component 100 has two external electrodes 131, 132 is described. However, the number, shape, etc. of the external electrodes 131, 132 can be changed according to the form of the internal electrodes 121, 122 and other purposes.

[0124] The external electrodes 131, 132 are arranged on the main body 110 and can be connected to the internal electrodes 121, 122.

[0125] More specifically, the external electrodes 131 and 132 can be respectively disposed on the third surface 3 and the fourth surface 4 of the main body 110, and can include a first external electrode 131 and a second external electrode 132 that are respectively connected to the first internal electrode 121 and the second internal electrode 122. That is, the first external electrode 131 can be disposed on the third surface 3 of the main body and connected to the first internal electrode 121, and the second external electrode 132 can be disposed on the fourth surface 4 of the main body and connected to the second internal electrode 122.

[0126] Also, the external electrodes 131 and 132 can be extended and disposed on a part of the first surface 1 and the second surface 2 of the main body 110, or can be extended and disposed on a part of the fifth surface 5 and the sixth surface 6 of the main body 110. That is, the first external electrode 131 can be disposed on a part of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110, and the second external electrode 132 can be disposed on a part of the first surface 1, the second surface 2, the fifth surface 5 and the sixth surface 6 of the main body 110, and on the third surface 3 of the main body 110.

[0127] On the other hand, the external electrodes 131 and 132 can be formed using any material as long as it has electrical conductivity such as metal, etc., and a specific material can be determined in consideration of electrical characteristics, structural stability, etc., and may further have a multilayer structure.

[0128] For example, the external electrodes 131 and 132 can include an electrode layer disposed on the main body 110 and a plating layer disposed on the electrode layer.

[0129] As a more specific example of the electrode layer, the electrode layer can include first electrode layers 131a and 132a that are fired electrode layers including a first conductive metal and glass, and can include second electrode layers 131b and 132b that are resin-based electrodes including a second conductive metal and resin.

[0130] Here, the first conductive metal can mean the conductive metal contained in the first electrode layers 131a and 132a, and the second conductive metal can mean the conductive metal contained in the second electrode layers 131b and 132b. At this time, the first conductive metal and the second conductive metal may be the same or different. When including a plurality of metal substances, at least one metal substance may be the same, but it is not particularly limited thereto.

[0131] Also, the electrode layers 131a, 132a, 131b, and 132b may be in a form in which the first electrode layers 131a and 132a and the second electrode layers 131b and 132b are sequentially formed on the main body, may be formed by a method of transferring a sheet containing a conductive metal onto the main body, or may be formed by a method of transferring a sheet containing a conductive metal onto a fired electrode.

[0132] Materials excellent in electrical conductivity can be used as the first conductive metal and the second conductive metal contained in the electrode layers 131a, 132a, 131b, and 132b. For example, the first conductive metal and the second conductive metal can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof, but are not particularly limited thereto.

[0133] In one embodiment of the present invention, the electrode layers 131a, 132a, 131b, and 132b can have a two-layer structure including the first electrode layers 131a and 132a and the second electrode layers 131b and 132b. Thereby, the external electrodes 131 and 132 can include the first electrode layers 131a and 132a containing a conductive metal and glass, and the second electrode layers 131b and 132b disposed on the first electrode layers 131a and 132a and containing a conductive metal and a resin.

[0134] By including glass in the first electrode layers 131a and 132a, it can play a role of improving the bonding property with the main body 110, and by including resin in the second electrode layers 131b and 132b, it can play a role of improving the bending strength.

[0135] The conductive metal used for the first electrode layers 131a and 132a is not particularly limited as long as it can be electrically connected to the internal electrodes 121 and 122 for forming capacitance. For example, it can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof. The first electrode layers 131a and 132a can be formed by applying a conductive paste provided by adding glass frit to the conductive metal particles and then firing.

[0136] The conductive metal included in the second electrode layers 131b and 132b can serve to be electrically connected to the first electrode layers 131a and 132a.

[0137] The conductive metal included in the second electrode layers 131b and 132b is not particularly limited as long as it can be electrically connected to the electrode layers 131a and 132a, and can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and alloys thereof.

[0138] The conductive metal contained in the second electrode layers 131b and 132b can include one or more of spherical particles and flaky particles. That is, the conductive metal can consist only of flaky particles, or only of spherical particles, or can be in a form in which flaky particles and spherical particles are mixed. Here, the spherical particles can include forms that are not completely spherical, for example, forms in which the length ratio of the major axis to the minor axis (major axis / minor axis) is 1.45 or less. The flaky particles mean particles having a flat and elongated form, and are not particularly limited, but for example, the length ratio of the major axis to the minor axis (major axis / minor axis) can be 1.95 or more. The lengths of the major axis and the minor axis of the above spherical particles and flaky particles can be measured from an image obtained by scanning the cross-sections in the first direction and the second direction cut at the central part in the third direction of the multilayer electronic component with a scanning electron microscope (SEM).

[0139] The resin contained in the second electrode layers 131b and 132b can play a role in ensuring bonding properties and absorbing shock. The resin contained in the second electrode layers 131b and 132b is not particularly limited as long as it has bonding properties and shock absorbency and can be mixed with conductive metal particles to form a paste, and for example, can include an epoxy resin.

[0140] Also, the second electrode layers 131b and 132b can include a plurality of metal particles, intermetallic compounds, and resin. By including the intermetallic compounds, the electrical connectivity with the first electrode layers 131a and 132a can be further improved. The intermetallic compounds can play a role in connecting a plurality of metal particles to improve electrical connectivity, and can play a role in surrounding and connecting the plurality of metal particles to each other.

[0141] At this time, the intermetallic compound can contain a metal having a melting point lower than the curing temperature of the resin. That is, since the intermetallic compound contains a metal having a melting point lower than the curing temperature of the resin, the metal having a melting point lower than the curing temperature of the resin melts during the drying and curing processes, and forms a part of the metal particles and the intermetallic compound so as to surround the metal particles. At this time, the intermetallic compound can preferably contain a low melting point metal of 300 °C or lower.

[0142] For example, Sn having a melting point of 213 to 220 °C can be included as the intermetallic compound. During the drying and curing processes, Sn melts, and the melted Sn wets high melting point metal particles such as Ag, Ni, or Cu by capillary action, and reacts with a part of the Ag, Ni, or Cu metal particles to form 3 Sn, Ni 3 Sn 4 , Cu 6 Sn 5 , Cu 3 intermetallic compounds such as Sn. Ag, Ni, or Cu that did not participate in the reaction remain in the form of metal particles.

[0143] Therefore, the plurality of metal particles contain one or more of Ag, Ni, and Cu, and the intermetallic compound contains one or more of 3 Ag 3 Sn 4 , Cu 6 Sn 5 and Cu 3 Sn.

[0144] The plating layers 131c and 132c can play a role in improving the mounting characteristics.

[0145] The types of the plating layers 131c and 132c are not particularly limited. In the drawings, only the single-layer plating layers 131c and 132c are shown, but the present invention is not limited thereto, and the plating layers 131c and 132c may be single layers containing one or more of nickel (Ni), tin (Sn), palladium (Pd), and alloys thereof, or may be formed of a plurality of layers.

[0146] As a more specific example for the plating layers 131c and 132c, the plating layers 131c and 132c may be Ni plating layers or Sn plating layers, may be in a form in which a Ni plating layer and an Sn plating layer are sequentially formed on the electrode layer, or may be in a form in which an Sn plating layer, a Ni plating layer, and an Sn plating layer are sequentially formed. Further, the plating layers 131c and 132c can also include a plurality of Ni plating layers and / or a plurality of Sn plating layers.

[0147] The size of the multilayer electronic component 100 does not need to be particularly limited.

[0148] However, in order to simultaneously achieve miniaturization and high capacity, the thicknesses of the dielectric layer and the internal electrodes need to be reduced and the number of laminations needs to be increased. Therefore, the effects according to the present invention can be more remarkable in the multilayer electronic component 100 having a size of 1005 (length × width: 1.0 mm × 0.5 mm) or less.

[0149] Hereinafter, the present invention will be described in more detail with reference to examples, which are for helping a specific understanding of the present invention, and the scope of the present invention is not limited by the examples.

[0150] (Examples) The comparative example was fabricated as a multilayer electronic component including a cover portion and a side margin portion, and was fabricated as a multilayer electronic component in which gallium (Ga) was not added to the cover portion and the side margin portion.

[0151] The example was fabricated in the same manner as the comparative example except that gallium (Ga) was added to the cover portion and the side margin portion so that each was 1 mol or less. At this time, the ratio (B / A) of the number of moles (B) of gallium (Ga) to 100 moles of titanium (Ti) contained in the side margin portion to the number of moles (A) of gallium (Ga) to 100 moles of titanium (Ti) contained in the cover portion was fabricated so as to satisfy 1.5 ≦ B / A.

[0152] The following various comparative examples and examples do not describe a single laminated electronic component, but correspond to comparative examples and examples that satisfy the manufacturing method described above.

[0153] Figures 7(a) and (b) are images obtained by photographing regions M1 and M2 in FIG. 6 with a scanning electron microscope (SEM) in Comparative Example 1, and Figures 7(c) and (d) are images obtained by photographing regions M1 and M2 in FIG. 6 with a scanning electron microscope (SEM) in Example 1.

[0154] More specifically, FIG. 7(a) is an image obtained by photographing a cross-section in the first direction and the third direction of the first cover portion with a scanning electron microscope (SEM) in Comparative Example 1. The number of pores P contained in the 547 μm cross-section of the first cover portion was measured to be 229. FIG. 7(b) is an image obtained by photographing a cross-section in the first direction and the third direction of the second side margin portion with a scanning electron microscope (SEM) in Comparative Example 1. The number of pores P contained in the 190 μm cross-section of the second side margin portion was measured to be 45. 2 In FIG. 7(b), for the second side margin portion, the number of pores P contained in the 190 μm cross-section was measured to be 45. 2 was measured to be 45.

[0155] FIG. 7(c) is an image obtained by photographing a cross-section in the first direction and the third direction of the first cover portion with a scanning electron microscope (SEM) in Example 1. The number of pores P contained in the 547 μm cross-section of the first cover portion was measured to be 110. FIG. 7(d) is an image obtained by photographing a cross-section in the first direction and the third direction of the second side margin portion with a scanning electron microscope (SEM) in Example 1. The number of pores P contained in the 190 μm cross-section of the second side margin portion was measured to be 39. 2 In FIG. 7(d), for the second side margin portion, the number of pores P contained in the 190 μm cross-section was measured to be 39. 2 was measured to be 39.

[0156] From this, it can be seen that when the ratio (B / A) of the number of moles (B) of titanium (Ti) per 100 moles of gallium (Ga) contained in the side margin portion to the number of moles (A) of titanium (Ti) per 100 moles of gallium (Ga) contained in the cover portion satisfies 1.5 ≤ B / A, the number of pores P contained in the cover portion and the side margin portion decreases.

[0157] Figure 8(a) is an image taken in Comparative Example 2 of the cross-section of the first cover portion in the first direction and the third direction in the HAADF mode of a scanning electron microscope (SEM). Figure 8(b) is an image obtained by performing EDS analysis in the region of Figure 8(a) to map the aluminum (Al) element. Figure 8(c) is an image obtained by performing EDS analysis in the region of Figure 8(a) to map the silicon (Si) element.

[0158] Figure 9(a) is an image taken in Example 2 of the cross-section of the first cover portion in the HAADF mode of a scanning electron microscope (SEM). Figure 9(b) is an image obtained by performing EDS analysis in the region of Figure 9(a) to map the aluminum (Al) element. Figure 9(c) is an image obtained by performing EDS analysis in the region of Figure 9(a) to map the silicon (Si) element. Figure 9(d) is an image obtained by performing EDS analysis in the region of Figure 9(a) to map the gallium (Ga) element.

[0159] Figure 10(a) is an image taken of the cross-section of the side margin portion of Comparative Example 3 in the HAADF mode of a scanning electron microscope (SEM). Figure 10(b) is an image obtained by performing EDS analysis in the region of Figure 10(a) to map the aluminum (Al) element. Figure 10(c) is an image obtained by performing EDS analysis in the region of Figure 10(a) to map the silicon (Si) element.

[0160] (a) of FIG. 11 is an image taken in the HAADF mode of a scanning electron microscope (SEM) of the cross-section of the side margin portion of Example 3, (b) of FIG. 11 is an image obtained by performing EDS analysis in the region of (a) of FIG. 11 and mapping the aluminum (Al) element, (c) of FIG. 11 is an image obtained by performing EDS analysis in the region of (a) of FIG. 11 and mapping the silicon (Si) element, and (d) of FIG. 11 is an image obtained by performing EDS analysis in the region of (a) of FIG. 11 and mapping the gallium (Ga) element.

[0161] From Comparative Example 2 and Comparative Example 3 and Example 2 and Example 3, when gallium (Ga) is contained in the cover portion and the side margin portion, it can be confirmed that gallium (Ga) is arranged at the grain boundaries and triple points, and since gallium (Ga) is arranged together in the region where silicon (Si) and aluminum (Al) are detected, it can be seen that gallium (Ga) is contained in the secondary-phase containing silicon (Si) and aluminum (Al).

[0162] Next, for Comparative Example 4 and Comparative Example 5 and Example 4 and Example 5, twenty channels each with twenty sample chips mounted were fabricated and moisture resistance reliability evaluations were performed.

[0163] (a) of FIG. 12 is a moisture resistance reliability evaluation graph of Comparative Example 4, and (b) of FIG. 12 is a moisture resistance reliability evaluation graph of Comparative Example 5. And (c) of FIG. 12 is a moisture resistance reliability evaluation graph of Example 4, and (d) of FIG. 12 is a moisture resistance reliability evaluation graph of Example 5.

[0164] For the moisture resistance reliability evaluation, when a rated voltage of 1.0 Vr was applied for 8 hours under temperature conditions of 85°C and relative humidity conditions of 85%, a channel in which the insulation resistance (IR) value dropped below 10 5 Ω was evaluated as defective.

[0165] In the cases of Comparative Example 4 and Comparative Example 5, there was one channel each determined to be defective, whereas in the cases of Example 4 and Example 5, there was no channel determined to be defective, and no channel with a decreased insulation resistance (IR 0 ) with respect to the initial insulation resistance (IR) was measured either.

[0166] From this, it can be seen that when the ratio (B / A) of the number of moles of titanium (Ti) per 100 moles of gallium (Ga) (B) contained in the side margin portion to the number of moles of titanium (Ti) per 100 moles of gallium (Ga) (A) contained in the cover portion satisfies 1.5 ≤ B / A, the moisture resistance reliability of the multilayer electronic component is improved.

[0167] Fig. 13(a) is a graph regarding the size of the crystal grain microstructure of Comparative Example 6, and Fig. 13(b) is a graph regarding the size of the crystal grain microstructure of Example 6.

[0168] The crystal grain microstructure means the crystal grains contained in a partial region of the cross-section in the first direction and the third direction of the first cover portion of each test example. In Fig. 13(a) and (b), the bar graph means the average size of the microstructure, and the "I"-shaped straight line graph means the degree of distribution of the crystal grain size.

[0169] The average value of the crystal grains contained in a partial region of Comparative Example 6 is 200 nm, and the average value of the crystal grains contained in a partial region of Example 7 is 176 nm. Also, the degree of distribution of the crystal grain size was measured to be wider for the comparative example than for the example.

[0170] From this, it can be seen that when the ratio (B / A) of the number of moles of titanium (Ti) per 100 moles of gallium (Ga) (B) contained in the side margin portion to the number of moles of titanium (Ti) per 100 moles of gallium (Ga) (A) contained in the cover portion satisfies 1.5 ≤ B / A, the size of the crystal grains decreases, and it can also be seen that the degree of distribution is improved. From this, it can be predicted that the breakdown voltage (BDV) due to the electric field concentration phenomenon is improved.

[0171] As described above, the embodiments of the present invention have been described in detail. However, the present invention is not limited by the above-described embodiments and the accompanying drawings, but is limited by the appended claims. Therefore, various forms of substitution, modification, and change are possible by those having ordinary knowledge in the art without departing from the technical idea of the present invention described in the claims, and it can be said that these also belong to the scope of the present invention.

[0172] In addition, the expression "one embodiment" used in this specification does not mean the same embodiment, but is provided to emphasize and explain each different unique feature. However, it does not exclude that the above-presented one embodiment is implemented in combination with the features of another one embodiment. For example, even if the matter described in a specific one embodiment is not described in another one embodiment, it can be understood as an explanation related to another one embodiment as long as there is no explanation contrary to or conflicting with that matter in another one embodiment.

[0173] The terms used in this specification are merely used to explain one embodiment and are not intended to limit the present invention. At this time, the singular expression includes the plural expression unless the context clearly indicates a different meaning.

Explanation of Reference Numerals

[0174] 100: Multilayer electronic component 110: Body 111: Dielectric layer 112, 113: Cover part 114, 115: Side margin part 121, 122: Internal electrode 131, 132: External electrode P: Pore

Claims

1. a capacitance forming portion including a dielectric layer and internal electrodes alternately disposed with the dielectric layer in a first direction, and a cover portion disposed on both end surfaces of the capacitance forming portion in the first direction, the body including a first surface and a second surface opposed to each other in the first direction, a third surface and a fourth surface connected to the first surface and the second surface and opposed to each other in the second direction, and a fifth surface and a sixth surface connected to the first surface, the second surface, the third surface and the fourth surface and opposed to each other in the third direction; external electrodes disposed on the third surface and the fourth surface; side margin portions disposed on the fifth surface and the sixth surface, the cover portion and the side margin portion contain titanium (Ti) and gallium (Ga); A multilayer electronic component, wherein a ratio (B / A) of the number of moles (B) of 100 moles of titanium (Ti) to the number of moles (A) of gallium (Ga) contained in the side margin portion to the number of moles (A) of 100 moles of titanium (Ti) to the number of moles (A) of gallium (Ga) contained in the cover portion satisfies 1.5≦B / A.

2. 2. The multilayer electronic component according to claim 1, wherein B satisfies 0 mol<B≦1.0 mol.

3. 2. The multilayer electronic component according to claim 1, wherein A satisfies 0 mol<A≦1.0 mol.

4. The laminated electronic component according to claim 1 , wherein the dielectric layer does not contain gallium (Ga).

5. when the dielectric layer of the capacitance forming portion is a first dielectric layer, the cover portion includes a second dielectric layer, and the side margin portion includes a third dielectric layer, 2. The multilayer electronic component according to claim 1, wherein the composition of the first dielectric layer is different from the composition of at least one of the second dielectric layer and the third dielectric layer.

6. 2. The multilayer electronic component according to claim 1, wherein at least one of the cover portion and the side margin portion includes a secondary phase including gallium (Ga).

7. At least one of the cover portion and the side margin portion is The crystal grains include a plurality of crystal grains, a crystal grain boundary disposed between adjacent crystal grains, and a triple junction disposed at a point where three or more of the crystal grain boundaries meet, The multilayer electronic component according to claim 6 , wherein the secondary phase is disposed at the at least one triple point.

8. The laminated electronic component according to claim 6 , wherein the secondary phase further comprises silicon (Si).

9. At least one of the cover portion and the side margin portion includes a plurality of crystal grains and a crystal grain boundary disposed between adjacent crystal grains; The multilayer electronic component according to claim 1 , wherein the grain boundaries contain gallium (Ga).

10. 10. The multilayer electronic component according to claim 9, wherein the crystal grain boundaries include regions in which an atomic percentage (at%) of gallium (Ga) is 2.0 at% or more.

11. 10. The multilayer electronic component according to claim 9, wherein the crystal grain boundaries have an average atomic percentage (at%) of gallium (Ga) of 0.5 at% or more and 2.0 at% or less.

12. 1 μm based on the cross sections of the cover portion in the first direction and the third direction. ２ The multilayer electronic component according to claim 1 , wherein the number of pores contained in the multilayer electronic component is 0.30 or less.

13. 1 μm based on the cross sections of the side margin portion in the first direction and the third direction. ２ The multilayer electronic component according to claim 1 , wherein the number of pores contained in the multilayer electronic component is 0.22 or less.

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