Thermosensitive crystal, method for manufacturing the same, and electronic apparatus

Abstract

To provide a thermosensitive crystal, a method for manufacturing the same, and an electronic apparatus.SOLUTION: A thermosensitive crystal 30 includes a crystal resonator 31, a thermistor 32, an insulating layer 33, and a first electrode structure 34. The crystal resonator 31 includes: a vibration element 311; and an airtight packaging structure 312 packaged on an outer periphery of the vibration element 311. The thermistor 32 is provided on one side of the airtight packaging structure 312. The insulating layer 33 covers at least one side of the thermistor 32 and the airtight packaging structure 312. The insulating layer 33 has via holes 331, and a conductive material is provided in the via hole 331. The insulation layer 33 has a heat insulation cavity 36, the heat insulation cavity 36 includes a sealed cavity and / or a semi-sealed cavity, and the heat insulation cavity 36 has gas or is in a vacuum state. The first electrode structure 34 is disposed on the insulating layer 33 and electrically connected to the thermistor 32 through the conductive material in the via hole 331.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] This application relates to the technical field of temperature sensing oscillators (TSX), and particularly to temperature sensing crystals, methods for manufacturing the same, and electronic devices.

Background Art

[0002] For the use of electronic devices, it is usually necessary to use a highly stable clock such as a temperature sensing crystal (TSX) combined with an external processing chip or a temperature compensated crystal oscillator. Generally, the closer the thermistor is to the crystal oscillator, the better. Thus, the temperature of the thermistor can be made closer to the temperature of the crystal vibration element. However, quartz crystals generally belong to piezoelectric products and have an inherent hysteresis characteristic with respect to temperature. Therefore, for external temperature changes, the faster the reaction, the less able it is to meet the low latency requirements necessary for conventional high-speed network communication and the like.

[0003] However, as various electronic devices have become smaller, the package size of the temperature sensing crystal has gradually become smaller. Since existing thermistors generally need to be installed and protected in a cavity, it has been difficult to reduce the size. In addition, the miniaturized temperature sensing crystal has problems such as being too fast in thermal response and the heat capacity of the ceramic base being limited by the material characteristics of the ceramic base itself and being unable to be made small. It is also a technical problem that the temperature sensing crystal must consider to balance the requirements of the conventional hermetic package and the bending strength installed on the circuit board.

Summary of the Invention

Problems to be Solved by the Invention

[0004] Therefore, it is necessary to provide a temperature sensing crystal, a method for manufacturing the same, and an electronic device that can cope with miniaturization and heat capacity limitations.

Means for Solving the Problems

[0005] In a first aspect, the heat-sensitive crystal according to an embodiment of the present application includes a crystal oscillator, a thermistor, an insulating layer, and a first electrode structure. The crystal oscillator includes a vibrating element and a hermetic sealing structure encapsulated on the outer periphery of the vibrating element. The thermistor is provided on one side of the hermetic sealing structure. The insulating layer covers at least one side of the thermistor and the hermetic sealing structure, and has a conductive via and a heat-insulating cavity containing a conductive material therein. The heat-insulating cavity includes a sealed cavity and / or a semi-sealed cavity, and the interior of the heat-insulating cavity has gas or is in a vacuum state. The first electrode structure is provided on the insulating layer and is electrically connected to the thermistor through the conductive material in the conductive via.

[0006] In one embodiment, the crystal oscillator is a crystal oscillator in a ceramic package. The hermetic sealing structure includes a ceramic substrate having a cavity, a cover plate covering the ceramic substrate, and a second electrode structure provided on the ceramic substrate. A conductor structure is provided on the ceramic substrate. The vibrating element is provided in the cavity and is connected to the ceramic substrate through an adhesive. The second electrode structure is also electrically connected to the conductor structure and the thermistor.

[0007] In one embodiment, the crystal oscillator is a crystal oscillator in an all-crystal package. The hermetic sealing structure includes a first sealing member provided on one side of the vibrating element, a second sealing member provided on the other side of the vibrating element, and a second electrode structure provided on the first sealing member. The first sealing member, the vibrating element, and the second sealing member all include a crystal material. The second electrode structure is electrically connected to the thermistor. The thermistor is provided on the first sealing member and is electrically connected to the second electrode structure. The insulating layer covers the thermistor and the first sealing member.

[0008] In one embodiment, the second electrode structure is electrically connected to the thermistor, the insulating layer is provided on at least one side of the thermistor and the hermetic sealing structure by a first semiconductor deposition process, the via hole is formed in the insulating layer by a first semiconductor etching process, the conductive material in the via hole is formed in the via hole by a second semiconductor deposition process, the first electrode structure is formed on the insulating layer by the second semiconductor deposition process or a third semiconductor deposition process, and the second electrode structure is formed on the first sealing member by a fourth semiconductor deposition process.

[0009] In one embodiment, there is gas in the sealed cavity, and the gas is air.

[0010] In one embodiment, the sealed cavity is formed by partially etching the insulating layer by a third semiconductor etching process to form a semi-sealed cavity, and further, another part of the insulating layer covers the opening of the semi-sealed cavity.

[0011] In one embodiment, the heat-insulating cavity includes the semi-sealed cavity, and the semi-sealed cavity is a groove structure provided around the outer periphery of the first electrode structure.

[0012] In a second aspect, a method for manufacturing a heat-sensitive crystal according to the present invention includes the steps of providing a thermistor, providing a crystal oscillator including a vibration element and a hermetic sealing structure encapsulated on the outer periphery of the vibration element, and installing the crystal oscillator on one side of the thermistor, forming an insulating layer having via holes and a heat-insulating cavity on at least one side of the thermistor and the hermetic sealing structure, forming a conductive material in the via holes, making the heat-insulating cavity include a sealed cavity and / or a semi-sealed cavity, and providing gas in the heat-insulating cavity or making the heat-insulating cavity in a vacuum state, Forming a first electrode structure on the insulating layer and electrically connecting the first electrode structure to the thermistor through the conductive material in the via hole.

[0013] In one embodiment, the crystal oscillator is a crystal oscillator in a ceramic package or a crystal oscillator in a full crystal package. The insulating layer is deposited on at least one side of the thermistor and the hermetic sealing structure by a first semiconductor deposition process. The via hole is formed in the insulating layer by a semiconductor etching process. The conductive material in the via hole is formed in the via hole by a second semiconductor deposition process. The first electrode structure is formed on the insulating layer by a third semiconductor deposition process.

[0014] In one embodiment, the method for manufacturing the heat-sensitive crystal is that the heat-insulating cavity includes the sealed cavity, there is gas in the sealed cavity, the gas is air, the sealed cavity is formed by etching a part of the insulating layer by a third semiconductor etching process to form a semi-sealed cavity, and further, another part of the insulating layer covers the opening of the semi-sealed cavity. The heat-insulating cavity includes the semi-sealed cavity, and the semi-sealed cavity is a groove structure provided around the outer periphery of the first electrode structure.

[0015] In a third aspect, the electronic device according to the present invention includes a circuit board provided with the heat-sensitive crystal described in any of the above embodiments.

Advantages of the Invention

[0016] In the thermosensitive crystal provided by the embodiment of the present application, its manufacturing method, and the electronic device, the thermistor is directly installed on one side of the hermetic seal structure of the crystal oscillator that has already been packaged, and further, seal protection between the crystal oscillator and the thermistor is realized through an insulating layer. It is not necessary to install a carrier substrate for packaging the crystal oscillator and the thermistor and its cavity, avoiding the problem that it is difficult to reduce the size of the thermosensitive crystal due to the carrier substrate and its cavity, and a packaged micro thermosensitive crystal can be realized. Also, since the insulating layer covers the thermistor, the thermistor is not exposed, and the thermistor can be better protected. In addition, the first electrode structure is provided on the insulating layer and can cope with the stress generated on the client application side where the thermosensitive crystal is placed on the circuit board, serving as a buffering role. Thereby, the reliability of the circuit board of the electronic device having the thermosensitive crystal is enhanced.

[0017] Furthermore, the heat insulation cavity provided by the insulating layer has, for example, a better heat insulation effect when the inside of the heat insulation cavity is a gas, can increase the thermal resistance and relieve the thermal shock of the external heat source to the oscillator, and has a better heat preservation effect, and can make the vibration of the thermosensitive crystal clock more stable. In addition, the thermosensitive crystal generally uses a ceramic base and does not need to be directly welded to the circuit board, so there is no need to consider the bending strength. The thermosensitive crystal focuses on the optimization of dimensions, thickness, and / or materials, can improve the performance of the thermosensitive crystal, and can reduce the design difficulty and cost.

Brief Description of the Drawings

[0018] To more clearly explain the technical aspects in the embodiments of the present application or related technologies, the drawings necessary for use in the embodiments or related technical descriptions will be briefly described below. Obviously, the drawings in the following description are only the embodiments of the present application, and those skilled in the art can also obtain other drawings from the provided drawings without creative labor.

Figure 1

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Figure 8

Embodiments for Carrying Out the Invention

[0019] To facilitate the understanding of the present application, the present application will be described in more detail below with reference to the relevant drawings. The drawings show preferred embodiments of the present application. However, the present application is not limited to the embodiments described in this specification and can be implemented in many different forms. Also, the purpose of providing these embodiments is to more fully understand the disclosure content of the present application.

[0020] Note that when a component is referred to as being "fixed" to another component, it may be directly present in the other component or an intermediate medium may exist. When a component is recognized as being "connected" to another component, it may be directly connected to the other component or an intermediate medium may also be present at the same time. The terms "inside", "outside", "left", "right" and similar expressions used in this specification are for illustrative purposes only and do not indicate that it is the only embodiment.

[0021] Unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terms used in this specification are for the purpose of describing specific embodiments only and are not intended to limit this application. The term "and / or" as used in this specification includes any and all combinations of one or more of the associated listed items.

[0022] Hereinafter, the thermosensitive crystal provided by the embodiments of this application, its manufacturing method, and electronic devices will be described in more detail with reference to FIGS. 1 to 6.

[0023] <Example 1> Refer to FIGS. 1 to 3. FIG. 1 is a schematic cross-sectional structure diagram of the thermosensitive crystal 30 provided by Example 1 of this application. FIG. 2 is a schematic top view of the thermosensitive crystal 30 provided by Example 1 of this application. FIG. 3 is a schematic bottom view of the thermosensitive crystal 30 provided by Example 1 of this application. The thermosensitive crystal 30 includes a crystal oscillator 31, a thermistor 32, an insulating layer 33, and a first electrode structure 34.

[0024] The crystal oscillator 31 includes a vibration element 311 and a sealing structure 312 encapsulated on the outer periphery of the vibration element 311. It is understood that the crystal oscillator 31 is a crystal resonance element that has already been packaged. In this embodiment, mainly, the aforementioned crystal oscillator 31 will be described by taking the crystal oscillator of a ceramic package as an example.

[0025] The thermistor 32 is provided on one side of the aforementioned hermetic sealing structure 312.

[0026] The foregoing insulating layer 33 covers at least one side of the thermistor 32 and the hermetic sealing structure 312. The insulating layer 33 has a via hole 331. The foregoing via hole 331 contains a conductive material. The foregoing first electrode structure 34 is provided on the insulating layer 33 and is electrically connected to the thermistor 32 through the conductive material in the foregoing via hole 331. The first electrode structure 34 may be a pad structure such as a solder pad. The insulating layer 33 is a resin material. The first electrode structure 34 includes a plurality of first electrodes (i.e., a plurality of pads). The number of via holes 331 can correspond to the number of first electrodes. Thereby, the foregoing first electrode can be electrically connected to the conductive material in the corresponding via hole 331. As shown in FIG. 3, in this embodiment, the number of first electrodes of the first electrode structure 34 is four, and they are respectively provided at the four corners of the bottom of the heat-sensitive crystal 30.

[0027] In this embodiment, the insulating layer 33 further has a heat insulation cavity 36. The foregoing heat insulation cavity 36 is a sealed cavity. Also, the heat insulation cavity 36 has a gas or is in a vacuum state. Preferably, the heat insulation cavity 36 contains a gas such as air, but is not limited to air. The number of heat insulation cavities 36 may be one or more. Specifically, it may be set according to actual needs. It is understood that the foregoing sealed cavity is a cavity that does not communicate with the outer periphery of the heat-sensitive crystal 30. However, in other embodiments, the heat insulation cavity 36 may be a semi-sealed cavity. That is, the heat insulation cavity 36 is an open cavity or a hollowed-out area that communicates with the outer periphery of the heat-sensitive crystal 30. For example, at least one side, both sides, or a plurality of sides of the heat insulation cavity 36 has an opening that communicates with the outer periphery of the heat-sensitive crystal 30.

[0028] In the thermosensitive crystal 30 provided by the embodiment of the present application, the aforementioned thermistor 32 is directly installed on one side of the hermetic sealing structure 312 of the packaged crystal oscillator 31. Further, the sealing protection of the crystal oscillator 31 and the thermistor 32 is realized through the insulating layer 33, eliminating the need to install a carrier substrate for packaging the crystal oscillator 31 and the thermistor 32 and its cavity, thus avoiding the problem that it is difficult to reduce the size of the thermosensitive crystal 30 due to the carrier substrate and its cavity, and enabling the realization of a micro-sized package of the thermosensitive crystal. Also, since the insulating layer 33 covers the thermistor 32, the thermistor 32 is not exposed, providing better protection for the thermistor 32. In addition, the first electrode structure 34 is provided on the insulating layer 33, capable of coping with the stress generated on the client application side where the thermosensitive crystal 30 is placed on the circuit board, and serving as a buffering role. Thereby, the reliability of the thermosensitive crystal 30 and the aforementioned circuit board having the thermosensitive crystal 30 is enhanced.

[0029] Furthermore, due to the heat insulation cavity 36 in the insulating layer 33, for example, when the inside of the heat insulation cavity 36 is filled with gas, it has a better heat insulation effect, increasing the thermal resistance and alleviating the thermal shock of the external heat source to the oscillator. At the same time, it has a better heat preservation effect, making the oscillation of the thermosensitive crystal 30 of the clock more stable. In addition, the thermosensitive crystal 30 generally uses a ceramic base and does not need to be directly welded to the circuit board, so there is no need to consider the bending strength. Thereby, the thermosensitive crystal 30 focuses on the optimization of dimensions, thickness, and / or materials, enhancing the performance of the thermosensitive crystal 30 and reducing the design difficulty and cost.

[0030] Specifically, the hermetic seal structure 312 may include a ceramic substrate 3121 having a cavity 3121a, a cover plate 3122 covering the ceramic substrate 3121, and a second electrode structure 3123 provided on the ceramic substrate 3121. A conductor structure 3121b may be provided in the ceramic substrate 3121. The vibration element 311 is provided in the cavity 3121a and can be electrically connected to the conductor structure 3121b via a conductive adhesive 3121c (for example, conductive rubber, etc.). The second electrode structure 3123 is further electrically connected to the aforementioned conductor structure 3121b. The second electrode structure 3123 is further electrically connected to the thermistor 32. Thereby, the thermistor 32 is electrically connected to the crystal oscillator 31. The second electrode structure 3123 may be a pad structure. The second electrode structure 3123 may include a plurality of second electrodes (i.e., a plurality of pads). The number of the conductor structures 3121b can correspond to the number of the second electrodes. Therefore, the aforementioned second electrodes can be electrically connected to the corresponding conductor structures 3121b. The vibration element 311 is a crystal material.

[0031] Furthermore, in this embodiment, the aforementioned second electrode structure 3123 can be electrically connected to the thermistor 32.

[0032] In this embodiment, the insulating layer 33 may be deposited on one side of the thermistor 32 and the hermetic seal structure 312 by a first semiconductor deposition process. The via hole 331 is formed in the insulating layer 33 by semiconductor etching. The aforementioned conductive material is formed in the via hole 331 by a second semiconductor deposition process. The first electrode structure 34 is formed on the insulating layer 33 by a third semiconductor deposition process. The semiconductor etching process realizes the patterning of the material layer to be etched by sequentially depositing the material to be etched and the photosensitive etchant and exposing them according to the patterned mask.

[0033] <Example 2> Refer to FIG. 4. FIG. 4 is a cross-sectional view of the heat-sensitive crystal 40 provided by Example 2 of the present application. The structure of the heat-sensitive crystal 40 in Example 2 is basically the same as that of the heat-sensitive crystal 30 in Example 1, and the difference between the two is that the reference numerals of the corresponding components are different. That is, the description of the heat-sensitive crystal 30 in Example 1 above can basically also be applied to the heat-sensitive crystal 40 in Example 2. Hereinafter, the differences between the heat-sensitive crystal 40 in Example 2 and the heat-sensitive crystal 30 in Example 1 will be mainly described.

[0034] In the heat-sensitive crystal 40 of Example 2, the first sealing member 4124, the second sealing member 4125, and the vibration element 411 are all crystal materials. That is, the crystal oscillator 41 is a crystal oscillator of an all-crystal package. The hermetic seal structure 412 includes a first sealing member 4124 provided on one side of the vibration element 411, a second sealing member 4125 provided on the other side of the vibration element 411, and a second electrode structure 4123 disposed on the first sealing member 4124. The second electrode structure 4123 is also electrically connected to the thermistor 42.

[0035] Specifically, in this embodiment, the thermistor 42 is provided on the first sealing member 4124 and is electrically connected to the second electrode structure 4123. The insulating layer 43 covers the thermistor 42 and the first sealing member 4124.

[0036] In this embodiment, the insulating layer 43 further has a heat-insulating cavity 46. The aforementioned heat-insulating cavity 46 is a sealed cavity. Also, the heat-insulating cavity 46 has gas or is in a vacuum state. Preferably, the heat-insulating cavity 46 contains a gas such as air, but is not limited to air. The number of heat-insulating cavities 46 may be one or more, and specifically may be set according to actual needs.

[0037] Basically the same as in Embodiment 1, the thermistor 42 is directly installed on one side of the hermetic sealing structure 412 of the packaged crystal oscillator 41. Further, through the insulating layer 43, sealing protection between the crystal oscillator 41 and the thermistor 42 is realized, eliminating the need to install a carrier substrate for packaging the crystal oscillator 41 and the thermistor 42 and its cavity, thus avoiding the problem that it is difficult to reduce the size of the heat-sensitive crystal 40 due to the carrier substrate and its cavity, and enabling the realization of a micro-sized package for the heat-sensitive crystal. Also, since the insulating layer 43 covers the thermistor 42, the thermistor 42 is not exposed, providing better protection for the thermistor 42. In addition, the first electrode structure 44 is provided on the insulating layer 43, capable of coping with the stress generated on the client application side where the heat-sensitive crystal 40 is placed on the circuit board, and serving a buffering role. Thereby, the reliability of the heat-sensitive crystal 40 and the aforementioned circuit board having the heat-sensitive crystal 40 is enhanced.

[0038] Furthermore, due to the heat-insulating cavity 46 in the insulating layer 43, for example, when there is air in the heat-insulating cavity 46, it has a better heat-insulating effect, increasing the thermal resistance and alleviating the thermal shock of the external heat source to the oscillator, and having a better heat-preserving effect, enabling the oscillation of the heat-sensitive crystal 40 of the clock to be more stable. Also, the heat-sensitive crystal 40 generally uses a ceramic base and does not need to be directly welded to the circuit board. Therefore, there is no need to consider the bending strength, and the heat-sensitive crystal 40 focuses on the optimization of dimensions, thickness, and / or material, enhancing the performance of the heat-sensitive crystal 40 and reducing the design difficulty and cost.

[0039] <Embodiment 3> Refer to FIGS. 5 and 6 together. FIG. 5 is a cross-sectional view of the thermosensitive crystal 50 provided by Example 3 of the present application, and FIG. 6 is a schematic bottom view of the thermosensitive crystal 50 provided by Example 3 of the present application. The structure of the thermosensitive crystal 50 in Example 3 is basically the same as that of the thermosensitive crystal 30 in Example 1, and the difference between the two is that the reference numerals of the corresponding components are different. That is, the description of the thermosensitive crystal 30 in Example 1 above can basically also be applied to the thermosensitive crystal 50 in Example 3. Hereinafter, the differences between the thermosensitive crystal 50 in Example 3 and the thermosensitive crystal 30 in Example 1 will be mainly described.

[0040] In the thermosensitive crystal 50, the heat insulation cavity 56 of the insulation layer 53 further includes a semi-closed cavity 561. In this embodiment, the semi-closed cavity 561 is a groove structure provided around the outer periphery of the first electrode structure.

[0041] The above semi-closed cavity 561 can better exert technical effects such as facilitating heat insulation and heat dissipation at the bottom. Thereby, the reliability of the thermosensitive crystal 50 and the circuit board having the thermosensitive crystal 50 can be improved.

[0042] <Example 4> Refer to FIGS. 1 to 7. FIG. 7 is a flowchart of a manufacturing method of a thermosensitive crystal provided by Example 4 of the present application. The aforementioned manufacturing method includes the following steps S71 to S74.

[0043] In step S71, a thermistor is prepared. As shown in FIGS. 1 to 4, the aforementioned thermistor may be the thermistor 32, 42, 52 described in any one of Examples 1 to 3.

[0044] In step S72, a crystal oscillator is provided and installed on one side of the aforementioned thermistor. The aforementioned crystal oscillator includes a vibrating element and a hermetic sealing structure encapsulated around the vibrating element. Specifically, as shown in FIGS. 1 to 6, the aforementioned crystal oscillator may be a crystal oscillator with a ceramic package or a crystal oscillator with a full crystal package, that is, the crystal oscillators 31, 41, 51 described in any of Embodiments 1 to 3, and will not be further described here.

[0045] In step S73, an insulating layer having a via hole and a heat insulating cavity is formed on at least one side of the thermistor and the hermetic sealing structure. The via hole has a conductive material. The heat insulating cavity includes a sealed cavity and / or a semi-sealed cavity. The heat insulating cavity has gas or is a vacuum. Since the structures of the aforementioned insulating layers 33, 43, 53, via holes 331, 431, 531 and heat insulating cavities 36, 46, 56, and the conductive materials of the aforementioned via holes 331, 431, 531 were described in detail in Embodiment 1, they will not be further described here.

[0046] In step S74, a first electrode structure is formed on the aforementioned insulating layer, and the aforementioned first electrode structure is electrically connected to the aforementioned thermistor through the conductive material in the aforementioned via hole. Although the aforementioned first electrode structures 34, 44, 54 were described in detail in Embodiment 1, they will not be further described here.

[0047] <Example 5> Referring to FIG. 8. FIG. 8 is a schematic block diagram of an electronic device 80 provided according to Example 5 of the present application. The electronic device 80 according to this Example 5 may be a portable electronic device such as a mobile phone, a tablet, a display, a notebook computer, a digital camera, etc., but is not limited thereto. The aforementioned electronic device 80 may include a circuit board 81 provided with the thermosensitive crystals 30, 40, 50 described in any of the above embodiments.

[0048] The technical features in the above-described specific embodiments may be arbitrarily combined. For the sake of brevity of description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered to be within the scope described in this specification. The above-described embodiments only represent some embodiments of the present application, and the description is more specific and detailed. Therefore, it cannot be understood as a limitation of the patent scope of the present invention. It should be pointed out that those skilled in the art can make some modifications and improvements without departing from the gist of the present application, and these also belong to the protection scope of the present application. Therefore, the protection scope required by the present invention shall be in accordance with the appended claims.

Description of Reference Numerals

[0049] 311 Vibration element 312, 412, 512 Hermetic sealing structure 331 Through hole 30, 40, 50 Thermosensitive crystal 31, 41, 51 Crystal oscillator 32, 42, 52 Thermistor 33, 43, 53 Insulating layer 34, 44, 54 First electrode structure 331, 431, 531 Through hole 36, 46, 56 Heat insulation cavity 44 First electrode structure 80 Electronic device 81 Circuit board 411 Vibration element 561 Semi-hermetic cavity 3121 Ceramic substrate 3121a Cavity 3121b Conductor structure 3121c Conductive adhesive 3122 Cover plate 3123 Second electrode structure 4123 Second electrode structure 4124 First sealing member 4125 Second sealing member 5121 Ceramic substrate 5122 Cover plate 5121a Cavity 5121b Conductor structure 5121c Conductive adhesive

Claims

1. A crystal oscillator including a vibration element and a hermetic seal structure encapsulated on the outer periphery of the vibration element, a thermistor provided on one side of the hermetic seal structure, an insulating layer covering at least one side of the thermistor and the hermetic seal structure and having a via hole with a conductive material and a heat insulating cavity therein, and a first electrode structure provided on the insulating layer and electrically connected to the thermistor through the conductive material in the via hole. Here, the heat insulating cavity includes a sealed cavity and / or a semi-sealed cavity, and the inside of the heat insulating cavity has gas or is in a vacuum state, and is a heat-sensitive crystal characterized thereby.

2. The crystal oscillator is a crystal oscillator in a ceramic package. The hermetic seal structure includes a ceramic substrate having a cavity, a cover plate covering the ceramic substrate, and a second electrode structure provided on the ceramic substrate. A conductor structure is provided on the ceramic substrate. The vibration element is provided in the cavity and connected to the ceramic substrate through an adhesive. The second electrode structure is also electrically connected to the conductor structure and the thermistor. The heat-sensitive crystal according to claim 1, characterized in that.

3. The crystal oscillator is a crystal oscillator in an all-crystal package. The hermetic seal structure includes a first seal member provided on one side of the vibration element, a second seal member provided on the other side of the vibration element, and a second electrode structure provided on the first seal member. The first seal member, the vibration element, and the second seal member all contain a crystal material. The second electrode structure is electrically connected to the thermistor. The thermistor is provided on the first seal member and electrically connected to the second electrode structure. The insulating layer covers the thermistor and the first seal member. The heat-sensitive crystal according to claim 1, characterized in that.

4. The second electrode structure is electrically connected to the thermistor. The insulating layer is provided on at least one side of the thermistor and the hermetic sealing structure by a first semiconductor deposition process. The via hole is formed in the insulating layer by a first semiconductor etching process. The conductive material in the via hole is formed in the via hole by a second semiconductor deposition process. The first electrode structure is formed on the insulating layer by the second semiconductor deposition process or a third semiconductor deposition process. The second electrode structure is formed on the first sealing member by a fourth semiconductor deposition process. The thermosensitive crystal according to claim 3, characterized in that.

5. The heat insulation cavity includes the sealed cavity, there is gas in the sealed cavity, the gas is air, the sealed cavity is formed by partially etching the insulating layer by a third semiconductor etching process to form a semi-sealed cavity, and further, another part of the insulating layer covers the opening of the semi-sealed cavity. The thermosensitive crystal according to claim 1, characterized in that.

6. The heat insulation cavity includes a semi-sealed cavity, and the semi-sealed cavity is a groove structure provided around the outer periphery of the first electrode structure. The thermosensitive crystal according to claim 1, characterized in that.

7. The step of providing a thermistor; Providing a crystal oscillator including a vibration element and a hermetic sealing structure encapsulated on the outer periphery of the vibration element, and installing the crystal oscillator on one side of the thermistor; Forming an insulating layer having a via hole and a heat insulation cavity on at least one side of the thermistor and the hermetic sealing structure, forming a conductive material in the via hole, making the heat insulation cavity include a sealed cavity and / or a semi-sealed cavity, and providing gas in the heat insulation cavity or making the heat insulation cavity in a vacuum state; Forming a first electrode structure on the insulating layer and making the first electrode structure electrically connected to the thermistor through the conductive material in the via hole; A method for manufacturing a thermosensitive crystal, characterized by comprising the steps of.

8. The crystal oscillator is a crystal oscillator of a ceramic package or a crystal oscillator of an all-crystal package. The insulating layer is deposited on at least one side of the thermistor and the hermetic sealing structure by a first semiconductor deposition process. The via hole is formed in the insulating layer by a semiconductor etching process. The conductive material in the via hole is formed in the via hole by a second semiconductor deposition process. The first electrode structure is formed on the insulating layer by a third semiconductor deposition process. The method for manufacturing a heat-sensitive crystal according to claim 7, characterized in that

9. The heat insulation cavity includes the sealed cavity, there is gas in the sealed cavity, the gas is air, the sealed cavity is formed by etching a part of the insulating layer by a third semiconductor etching process to form a semi-sealed cavity, and further, another part of the insulating layer covers the opening of the semi-sealed cavity. The heat insulation cavity includes the semi-sealed cavity, and the semi-sealed cavity is a groove structure provided around the outer periphery of the first electrode structure. The method for manufacturing a heat-sensitive crystal according to claim 7, characterized in that

10. An electronic device including a circuit board provided with a heat-sensitive crystal according to any one of claims 1 to 6.

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