Method for forming integrated optical element and metasurface

Abstract

To provide a method for forming an integrated optical element and a metasurface.SOLUTION: An integrated optical element comprises: a light-emitting device layer; and a metasurface that includes a substrate, a plurality of conductive layers that are on the substrate, are arranged along a first direction, and each have a plurality of holes, a first dielectric layer that covers the conductive layer at equal angles, and a first transparent conductive layer that covers the first dielectric layer at equal angles, and that is on the light-emitting device layer.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] Some embodiments of the present disclosure relate to an integrated optical element and a method for forming a metasurface.

Background Art

[0002] Since a gate-tunable metasurface is generally a reflective element, a voltage can be applied to the gate to manipulate the carrier concentration of the transparent conductive film sandwiched between the structures. By changing its optical properties, the element can provide different phase shifts at different positions, thereby adjusting the angular deflection of the reflected light beam. However, the unit antenna of a gate-tunable metasurface is often located at a wavelength position with low reflectivity, so the element operates in a band position with low reflectivity, ultimately reducing the efficiency of the entire element.

Summary of the Invention

[0003] Some embodiments of the present disclosure provide an optical element including a light-emitting element layer, a plurality of conductive layers arranged along a first direction and each having a plurality of holes, a first dielectric layer covering the conductive layers, and a first transparent conductive layer covering the first dielectric layer, and including a metasurface in the light-emitting element layer.

[0004] In some embodiments, the metasurface further includes a substrate under the conductive layer.

[0005] In some embodiments, the first dielectric of the metasurface is in contact with the substrate.

[0006]

[0007] In some embodiments, the metasurface further includes a second transparent conductive layer between the substrate and the conductive layer, and a second dielectric layer between the second transparent conductive layer and the conductive layer.

[0008] ​In some embodiments, each hole of the conductive layer is arranged along a second direction different from the first direction.

[0009] In some embodiments, the conductive layers are arranged in a two-dimensional array.

[0010] In some embodiments, each hole of the conductive layer includes a plurality of first holes and a plurality of second holes. The first holes are arranged along a first direction and a second direction different from the first direction. One of the second holes is between four first holes, and the center of one of the second holes is aligned with the center of the line connecting the centers of two adjacent first holes.

[0011] In some embodiments, one of the holes is a concave quadrilateral.

[0012] In some embodiments, one of the holes includes two circular holes connected by a rectangular hole.

[0013] Some embodiments of the present disclosure provide a method for forming a metasurface, including the steps of forming a conductive material layer on a substrate, patterning the conductive material layer to form a plurality of conductive layers arranged along a first direction and having a plurality of holes on the substrate, forming a first dielectric layer on the conductive layer, and forming a first transparent conductive layer on the first dielectric layer.

[0014] In some embodiments, when forming the first dielectric layer on the conductive layer, the first dielectric layer is extended from the plurality of sidewalls of the conductive layer to the upper surface of the substrate.

[0015] In some embodiments, before forming the metal material layer on the substrate, the method further includes the steps of forming a second transparent conductive layer on the substrate and forming a second dielectric layer between the second transparent conductive layer and the conductive layer on the second transparent conductive layer.

[0016] In some embodiments, after forming the first dielectric layer on the conductive layer, the first dielectric layer is extended from the plurality of sidewalls of the conductive layer to the upper surface of the second dielectric layer.

[0017] In some embodiments, each hole of the conductive layer is arranged along a first direction.

[0018] In some embodiments, each hole of the conductive layer is further arranged along a second direction different from the first direction.

[0019] In some embodiments, the conductive layers are arranged in a two-dimensional array.

[0020] In some embodiments, each hole of the conductive layer includes a plurality of first holes and a plurality of second holes. The first holes are arranged along a first direction and a second direction different from the first direction. One of the second holes is located between four first holes, and the center of one of the second holes is aligned with the center of the line connecting the centers of two adjacent first holes.

[0021] In some embodiments, one of the holes is a concave quadrilateral.

[0022] In some embodiments, one of the holes includes two circular holes connected by a rectangular hole.

Brief Description of the Drawings

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Mode for Carrying Out the Invention

[0024] Some embodiments of the present disclosure provide an optical element having a metasurface with an innovative structure. The metasurface of some embodiments of the present disclosure is a transmissive metasurface, and the protruding structure of the metasurface has holes. Therefore, the metasurface of some embodiments of the present disclosure can operate at a wavelength position with high transmittance, and the efficiency of the metasurface is improved.

[0025] FIG. 1 is a schematic diagram showing an integrated optical element 100 according to some embodiments of the present disclosure. The integrated optical element 100 includes a light-emitting element layer 200 and a metasurface 300. The metasurface 300 is on the light-emitting element layer 200. The light-emitting element layer 200 may be a layer including light-emitting elements in any form. For example, the light-emitting element layer 200 may include a mounting plate and light-emitting elements arranged on the mounting plate, and the light-emitting elements may be light-emitting diode chips, micro light-emitting diode chips, organic light-emitting diode chips, semiconductor laser chips, or the like.

[0026] The metasurface 300 is on the light-emitting element layer 200. The metasurface 300 in some embodiments of the present disclosure is a transmissive metasurface. That is, the light emitted from the light source passes through the metasurface 300, and the metasurface 300 can change the optical characteristics of the light emitted from the light source. Therefore, the metasurface 300 is aligned with the light-emitting direction of the light-emitting element layer 200 (for example, both emit light upward).

[0027] FIG. 2 is a top view showing a part of the metasurface 300 in FIG. 1. The metasurface 300 includes a plurality of channels, such as channels CH1 and CH2, and each channel may include a plurality of protruding structures. For example, channel CH1 may include protruding structures A1 and A2, and channel CH2 may include protruding structures A3 and A4. In some embodiments, the protruding structures A1, A2, A3, and A4 include holes H, and the protruding structures A1, A2, A3, and A4 are arranged along a first direction D1 and extend along a second direction D2. In some embodiments, each protruding structure includes a row of holes H. Each hole H is a single unit antenna. The size of the hole H can determine the wavelength range of light waves that can pass through the metasurface 300. In some embodiments, the hole H is a sub-wavelength structure, and the aperture of the hole H is between about 1 / 10 and 1 / 2 of the wavelength of the incident light.

[0028] The metasurface 300 is used to change the deflection angle of the incident light. After the light is incident on the metasurface 300 from below the metasurface 300, the deflection angle is θ = sin -1 It may be represented by the relational expression of (λ / Λ). θ is the deflection angle, λ is the wavelength of the incident light, and Λ is the width of the large period of the metasurface 300. The "large period" here indicates the total width of a specific number of channels. For example, in FIG. 2, channels CH1 and CH2 constitute one large period Λ 2 and the channels CH1 and CH2 in the large period Λ 2 can be used to adjust and control the same deflection angle. Therefore, a specific large period can be selected for a specific deflection angle and a corresponding voltage can be applied, and different voltages are applied to different channels (for example, channels CH1 and CH2 in the large period Λ 2 ). When a voltage is applied to a channel, the carrier concentration of the channel transparent conductive layer changes, and further the optical properties of the channel change. When different voltages are applied to different channels in a large period, the carrier concentrations of the transparent conductive layers between different channels are different (for example, gradually change along the first direction D1), so the optical properties between different channels are different. In this way, the metasurface 300 can provide different phase compensations at different positions, thereby adjusting and controlling the angular deflection of the incident beam.

[0029] The number of channels in each large period can determine the fineness of the beam adjustment and control ability. For example, the more channels there are in each large period, the higher the fineness of the beam adjustment and control ability. In some embodiments, each large period may include two channels, for example, channel CH1 and channel CH2. Channel CH1 may include protruding structures A1 and A2, and channel CH2 may include protruding structures A3 and A4. However, the present disclosure is not limited thereto.

[0030] FIG. 3 is a cross-sectional view showing the metasurface 300 along the line A-A of FIG. 2 in some embodiments. The metasurface 300 includes a substrate 310, a conductive layer 340, a dielectric layer 350, and a transparent conductive layer 360. Specifically, the conductive layer 340 is on and in contact with the substrate 310. The conductive layer 340 may have a specific shape, and the conductive layer 340 has holes H. The conductive layer 340 may be used to determine the shapes of the protruding structures A1, A2, A3, A4 (FIG. 2). The dielectric layer 350 covers the conductive layer 340 isogonally, and the transparent conductive layer 360 covers the dielectric layer 350 isogonally. In some embodiments, since the dielectric layer 350 further covers the substrate 310 isogonally, the dielectric layer 350 extends along the upper surface of the substrate 310 to the side walls and the upper surface of the conductive layer 340. That is, the conductive layer 340 is sandwiched between the dielectric layer 350 and the substrate 310. The conductive layer 340 and the transparent conductive layer 360 are made of different conductive materials, and the conductive materials of the conductive layer 340 and the transparent conductive layer 360 have different carrier concentrations. The carrier concentration of the conductive layer 340 is greater than the carrier concentration of the transparent conductive layer 360. For example, the carrier concentration of the conductive layer 340 itself is more than two orders of magnitude greater than the carrier concentration of the transparent conductive layer 360. In some embodiments, the order of the carrier concentration of the conductive layer 340 is 10 22 per m 3 and the order of the carrier concentration of the transparent conductive layer 360 is 10 20 per m 3 It should be noted that FIG. 3 is a cross-sectional view showing only the protruding structure A1. Cross-sectional views of other protruding structures may also be shown in FIG. 3. Therefore, the metasurface 300 may include a plurality of conductive layers 340. The conductive layers 340 are arranged along the first direction D1 on the substrate 310, and each of the conductive layers 340 has a plurality of holes H as shown in FIG. 2. Also, since the transparent conductive layers 360 on each protruding structure are not connected to each other, in subsequent operations, the transparent conductive layers 360 on each protruding structure can be independently adjusted and controlled.

[0031] The metasurface 300 in FIG. 3 is a single-gate structure, that is, a voltage V u may be applied to the transparent conductive layer 360, and the voltage V g (V g(which is generally the ground voltage) may be applied to the conductive layer 340, so that the carrier concentration on the side of the transparent conductive layer 360 close to the dielectric layer 350 can be adjusted and controlled. The V applied to the transparent conductive layers 360 of different channels u is different, so that the carrier concentrations of the transparent conductive layers between different channels are different (for example, gradually change along the first direction D1 in FIG. 2), and thus the optical properties between different channels are different. In this way, the metasurface 300 can provide different phase compensations at different positions, thereby adjusting and controlling the angular deflection of the incident beam. In this embodiment, since the channels are arranged along the first direction D1 (FIG. 2), that is, the channels constitute a one-dimensional metasurface, the angular deflection of the incident beam may be adjusted and controlled in a one-dimensional direction.

[0032] In the present disclosure, the metasurface 300 is a transmissive metasurface, and the protruding structures A1, A2, A3, and A4 of the metasurface 300 have holes H. Since the reflective metasurface is usually designed at a wavelength position with low reflectivity, the efficiency of the metasurface is low, and the reflective metasurface is prone to generate extra stray light and high-order diffraction. In contrast, these holes H of the metasurface 300 are anti-structures designed based on Babinet’s principle, and the plasma resonance mode brought about by the holes H is located at a wavelength position with high transmittance, which contributes to the improvement of the overall efficiency of the metasurface 300. In addition, since the conductive layer 340 of the metasurface 300 of the present disclosure has holes H and the holes H are sub-wavelength structures, the occurrence of high-order diffraction (for example, grating diffraction) can be avoided. In this way, the quality of the transmitted beam can be improved. In addition, since the metasurface 300 of the present disclosure is a transmissive metasurface, it is easy to combine with the light-emitting element layer to form the integrated optical element 100 (FIG. 1). When the metasurface is a reflective metasurface, the light-emitting element layer is located on the metasurface. When the integrated optical element is to maintain upward emission, the presence of the light-emitting element layer increases the design constraints.

[0033] FIG. 4 is a cross-sectional view showing the meta-surface 300 along the line A-A of FIG. 2 in some other embodiments. The meta-surface 300 of FIG. 4 is similar to the meta-surface 300 of FIG. 3, but is different in that the meta-surface 300 of FIG. 4 further includes a transparent conductive layer 320 and a dielectric layer 330. The transparent conductive layer 320 is between the substrate 310 and the conductive layer 340, the dielectric layer 330 is between the transparent conductive layer 320 and the conductive layer 340, the conductive layer 340 contacts the dielectric layer 330 and does not contact the substrate 310. The dielectric layer 350 isogonally covers the conductive layer 340, and the transparent conductive layer 360 isogonally covers the dielectric layer 350. In some embodiments, since the dielectric layer 350 further isogonally covers the dielectric layer 330, the dielectric layer 350 extends along the upper surface of the dielectric layer 330 to the side wall and the upper surface of the conductive layer 340. The conductive layer 340 and the transparent conductive layers 320, 360 are made of different conductive materials and the conductive materials of the conductive layer 340 and the transparent conductive layers 320, 360 have different carrier concentrations. The carrier concentration of the conductive layer 340 is greater than the carrier concentrations of the transparent conductive layers 320, 360. For example, the carrier concentration of the conductive layer 340 itself is more than two orders of magnitude greater than the carrier concentrations of the transparent conductive layers 320, 360. In some embodiments, the order of the carrier concentration of the conductive layer 340 is 10 22 per m 3 and the order of the carrier concentrations of the transparent conductive layers 320, 360 is 10 20 per m 3 It should be noted that FIG. 4 is a cross-sectional view showing only the protruding structure A1. Cross-sectional views of other protruding structures may also be shown in FIG. 4. Therefore, the meta-surface 300 may include a plurality of conductive layers 340, the conductive layers 340 are arranged along the first direction D1 on the substrate 310, and each of the conductive layers 340 has a plurality of holes H as shown in FIG. 2. Also, since the transparent conductive layers 360 on each protruding structure are not connected to each other and the transparent conductive layers 320 under each protruding structure are not connected to each other, in subsequent operations, the transparent conductive layer 360 on each protruding structure and the transparent conductive layer 320 under the protruding structure can be independently adjusted and controlled.

[0034] The meta-surface 300 of FIG. 4 is a double-gate structure, that is, different voltages V u and Vb may be applied to the transparent conductive layer 360 and the transparent conductive layer 320 respectively, and the voltage V g (V g is generally the ground voltage) may be applied to the conductive layer 340, so that the carrier concentration on the side of the transparent conductive layer 360 close to the dielectric layer 350 and the carrier concentration on the side of the transparent conductive layer 320 close to the dielectric layer 330 can be adjusted and controlled. The V b applied to the transparent conductive layer 320 of different channels is different, and the V u applied to the transparent conductive layer 360 of different channels is different. Therefore, the carrier concentrations of the transparent conductive layers between different channels are different (for example, gradually change along the first direction D1 in FIG. 2), and thus the optical properties between different channels are different. In this way, the metasurface 300 can provide different phase compensations at different positions, thereby adjusting and controlling the angular deflection of the incident beam. In some embodiments, the metasurface 300 with a double-gate structure can provide better beam adjustment and control ability than the metasurface 300 with a single-gate structure. In this embodiment, the channels are arranged along the first direction D1 (FIG. 2), that is, the channels constitute a one-dimensional metasurface, so that one-dimensional adjustment and control may be performed on the angular deflection of the incident beam.

[0035] FIGS. 5 to 8 are cross-sectional views showing the manufacturing process of the metasurface 300 of FIG. 4 in some embodiments of the present disclosure. Referring to FIG. 5, a substrate 310 is provided, a transparent conductive layer 320 is formed on the substrate 310, and then a dielectric layer 330 is formed on the transparent conductive layer 320. The transparent conductive layer 320 and the dielectric layer 330 are flat layers on the substrate 310. In some embodiments, the substrate 310 may be a glass substrate or other transparent substrate, so that the light source below can transmit through the metasurface 300. In some embodiments, the transparent conductive layer 320 may be indium tin oxide (ITO) or other suitable transparent conductive materials. The dielectric layer 330 is Al 2 O 3 、HfO 2It may be a high dielectric constant material such as the like. In some embodiments, the dielectric layer 330 may be formed by atomic layer deposition.

[0036] Referring to FIG. 6, a metal material layer 340' is formed on the dielectric layer 330. Next, referring to FIG. 7, the metal material layer 340' is patterned to form a conductive layer 340. The conductive layer 340 is arranged along a first direction (for example, the first direction D1 in FIG. 2) and the conductive layer 340 has a plurality of holes H. Specifically, the patterned conductive layer 340 is formed as a plurality of protruding structures (for example, the protruding structures A1, A2, A3, A4 in FIG. 2), and each protruding structure has a plurality of holes H. The shape of the conductive layer 340 and the aperture diameter of the holes H may be determined according to the actual situation. In some embodiments, the conductive layer 340 can select an appropriate material according to the wavelength to be applied. For example, when the metasurface 300 is applied to infrared rays, the conductive layer 340 may be gold, when the metasurface 300 is applied to ultraviolet rays, the conductive layer 340 may be aluminum, and when the metasurface 300 is applied to blue light, the conductive layer 340 may be silver.

[0037] Referring to FIG. 8, a dielectric layer 350 is formed on the conductive layer 340. After the dielectric layer 350 is formed on the conductive layer 340, the dielectric layer 350 is extended from the sidewall of the conductive layer 340 to the upper surface of the dielectric layer 330. The dielectric layer 350 and the dielectric layer 330 surround the conductive layer 340 therebetween. Next, a transparent conductive layer 360 is formed on the dielectric layer 350. In some embodiments, the dielectric layer 350 may be Al 2 O 3 、HfO 2 and other high dielectric constant materials. In some embodiments, the dielectric layer 350 may be formed by atomic layer deposition. The transparent conductive layer 360 may be indium tin oxide or other suitable transparent conductive materials. After the metasurface 300 is formed, the metasurface 300 may be placed on the light emitting element layer 200. Therefore, the metasurface 300 may be used to adjust and control the physical properties of the light emitted by the light emitting element layer 200.

[0038] The manufacturing process of the metasurface 300 in FIG. 3 is similar to the manufacturing processes shown in FIGS. 5 to 8. When manufacturing the metasurface 300 in FIG. 3, it is different in that the transparent conductive layer 320 and the dielectric layer 330 in FIG. 5 can be omitted. Thus, in FIG. 6, a metal material layer 340' can be directly formed on the substrate 310, and the subsequent processes can be continued. When manufacturing the metasurface 300 in FIG. 3, after forming the dielectric layer 350 on the conductive layer 340, the dielectric layer 350 is extended from the sidewall of the conductive layer 340 to the upper surface of the substrate 310. The dielectric layer 350 and the substrate 310 surround the conductive layer 340 therebetween.

[0039] FIGS. 9 and 10 are cross-sectional views showing the manufacturing process of the metasurface 300 in some other embodiments of the present disclosure. In FIGS. 9 and 10, the metasurface 300 may be directly formed on the light-emitting element layer 200. Specifically, referring to FIG. 9, a dielectric layer 250 is formed on the light-emitting element layer 200. The dielectric layer 250 may be manufactured with silicon oxide, silicon nitride, or the like.

[0040] Referring to FIG. 10, the metasurface 300 is formed on the dielectric layer 250. The forming method of the metasurface 300 is similar to the manufacturing processes shown in FIGS. 5 to 8. In FIG. 10, it is different in that the transparent conductive layer 320 is formed on the dielectric layer 250. In this way, the metasurface 300 may be directly formed on the light-emitting element layer 200.

[0041] FIG. 11 is a top view showing the metasurface 300 in some other embodiments. The metasurface 300 in FIG. 11 is similar to the metasurface 300 in FIG. 2, but the number of channels included in the metasurface 300 in FIG. 11 is different from the number of channels included in the metasurface 300 in FIG. 2, and the number of holes H included in each protruding structure of the metasurface 300 in FIG. 11 is also different from the number of holes H included in each protruding structure of the metasurface 300 in FIG. 2. For example, the channels CH1, CH2, and CH3 in FIG. 11 have one large period Λ 3It can be configured. In this embodiment, different voltages are applied to channels CH1, CH2, and CH3, so the optical characteristics between different channels are different. In this way, the metasurface 300 can provide different phase compensations at different positions, thereby adjusting and controlling the angular deflection of the incident beam. As the number of channels included in each major period increases, the angular deflection of the incident beam can be adjusted and controlled more finely. Also, each protruding structure of the metasurface 300 in FIG. 11 includes two rows of holes H. The number of holes H in each protruding structure may be designed according to the actual situation.

[0042] FIG. 12 is a top view showing the metasurface 300 in some other embodiments. The metasurface 300 in FIG. 12 is similar to the metasurface 300 in FIG. 11. The holes H in FIG. 12 include a first hole H1 and a second hole H2, where the first hole H1 is arranged along a first direction D1 and a second direction D2, and the second hole H2 is arranged between four holes H1, and the center of the second hole H2 is aligned with the center of the line connecting the centers of two adjacent first holes H1, which is different. Therefore, by increasing the number of holes H per unit area, the adjustment and control ability of the metasurface 300 on the beam is improved.

[0043] FIG. 13 is a top view showing the metasurface 300 in some other embodiments. The metasurface 300 of FIG. 13 includes a plurality of channels CH1, CH2, CH3, CH4, CH5, CH6, CH7, CH8, and CH9, and each channel may include a protruding structure. The protruding structures are arranged along a second direction D2 perpendicular to the first direction D1 in addition to the first direction D1. Therefore, in FIG. 13, the channels (i.e., the protruding structures) of the metasurface 300 are arranged in a two-dimensional array in a plan view. In this way, different voltages are applied to the channels CH1, CH2, CH3, CH4, CH5, CH6, CH7, CH8, and CH9 in FIG. 13, so the optical properties between different channels are different. In this way, the metasurface 300 can provide different phase shifts at different positions, thereby adjusting and controlling the angular deflection of the incident beam. When the metasurface 300 in the two-dimensional space is constituted by the channels, the adjustment and control in the two-dimensional direction may be performed on the angular deflection of the incident beam.

[0044] FIG. 14 is a top view showing the protruding structure AN in some embodiments. The protruding structure AN of FIG. 14 may have a dumbbell-shaped hole H. Specifically, the hole H is two circular holes connected by a rectangular hole. The protruding structure AN itself is rectangular, and the length P of the protruding structure A in the first direction D1 x is 400 nm, and the length P in the second direction D2 y is 600 nm, and the thickness is 100 nm. The width W of the dumbbell neck of the hole H is 100 nm. When the protruding structure AN has the above shape, the protruding structure AN can operate at a wavelength position with a high transmittance. For example, when adjusting and controlling the deflection angle of the incident beam using the protruding structure AN of FIG. 14, the wavelength of the incident beam is about 1.5 μm, the transmittance of the incident beam reaches 92%, and the phase adjustment and control ability can reach 141.6 degrees. Since the protruding structures AN may be arranged in a one-dimensional array or a two-dimensional array, the metasurface constituted by the protruding structures AN can perform adjustment and control in the one-dimensional direction or the two-dimensional direction on the angular deflection of the incident beam.

[0045] FIG. 15 is a top view showing a protruding structure AN in some other embodiments. The protruding structure AN in FIG. 15 may have a boomerang-shaped hole H. Specifically, the hole H may be a concave quadrilateral. In some embodiments, as shown in FIG. 15, the four corners of the concave quadrilateral are formed by straight lines. In some other embodiments, the four corners of the concave quadrilateral may be rounded.

[0046] As described above, the transmissive metasurface of some embodiments of the present disclosure has various advantages. Since the metasurface has holes and these holes may be designed based on Babinet’s principle, the plasma resonance mode brought about thereby is located at a wavelength position with high transmittance, which contributes to the improvement of the overall efficiency of the metasurface. In addition, since the conductive layer of the metasurface of the present disclosure has holes and the holes are sub-wavelength structures, it may be used to avoid the occurrence of higher-order diffraction (for example, grating diffraction). Therefore, the quality of the transmitted beam is improved. In addition, since the metasurface of the present disclosure is a transmissive metasurface, it is easy to form an integrated optical element in combination with the light-emitting element layer. The light-emitting element layer does not interfere with the light-emitting direction of the integrated optical element.

[0047] The above are only some embodiments of the present disclosure, not all embodiments. All equivalent changes made by those skilled in the art to the technical solutions of the present disclosure by reading the specification of the present disclosure shall fall within the scope of the claims of the present disclosure.

Description of Reference Numerals

[0048] 100 Integrated optical element 200 Light-emitting element layer 250 Dielectric layer 300 Metasurface 310 Substrate 320 Transparent conductive layer 330 Dielectric layer 340 Conductive layer 340’ Metal material layer 350 Dielectric layer 360 Transparent conductive layer A-A line A, A1, A2, A3, A4, AN protruding structures CH1~CH9 channels D1 First direction D2 Second direction H Hole H1 First hole H2 Second hole P x Length P y Length W Width

Claims

1. A light emitting element layer; A metasurface in the light-emitting element layer, the metasurface including a plurality of conductive layers arranged along a first direction, each having a plurality of holes, a first dielectric layer covering the conductive layers, and a first transparent conductive layer covering the first dielectric layer; An integrated optical element comprising:

2. The integrated optical element of claim 1 , wherein the metasurface further comprises a substrate underlying the conductive layer.

3. The integrated optical element of claim 2 , wherein the first dielectric layer of the metasurface is in contact with the substrate.

4. The metasurface comprises: a second transparent conductive layer between the substrate and the conductive layer; a second dielectric layer between the second transparent conductive layer and the conductive layer; The integrated optical device of claim 2 further comprising:

5. The integrated optical element of claim 4 , wherein the first dielectric layer of the metasurface is in contact with the second dielectric layer.

6. The integrated optical element according to claim 1 , wherein the holes in each of the conductive layers are arranged along a second direction different from the first direction.

7. The integrated optical element according to claim 1 , wherein the conductive layers are arranged in a two-dimensional array.

8. 2. The integrated optical element of claim 1, wherein each of the holes in the conductive layer includes a plurality of first holes and a plurality of second holes, the first holes are arranged along the first direction and a second direction different from the first direction, one of the second holes is between four of the first holes, and a center of one of the second holes is aligned with the center of a line connecting the centers of two adjacent first holes.

9. The integrated optical element of claim 1 , wherein one of the holes is a concave square.

10. 2. The integrated optical element of claim 1, wherein one of the holes comprises two circular holes connected by a rectangular hole.

11. forming a layer of conductive material on a substrate; patterning the conductive material layer to form a plurality of conductive layers arranged along a first direction on the substrate and having a plurality of holes; forming a first dielectric layer on the conductive layer; forming a first transparent conductive layer on the first dielectric layer; A method for forming a metasurface comprising:

12. 12. The method of claim 11, wherein forming the first dielectric layer on the conductive layer comprises extending the first dielectric layer from a plurality of sidewalls of the conductive layer to a top surface of the substrate.

13. Prior to forming the conductive material layer on the substrate, forming a second transparent conductive layer on the substrate; forming a second dielectric layer on the second transparent conductive layer between the second transparent conductive layer and the conductive layer; The method of claim 11 further comprising:

14. 14. The method of claim 13, further comprising forming the first dielectric layer on the conductive layer, the first dielectric layer extending from a plurality of sidewalls of the conductive layer to a top surface of the second dielectric layer.

15. The method of claim 11 , wherein the holes in each of the conductive layers are aligned along a first direction.

16. The method of claim 15 , wherein the holes in each of the conductive layers are further arranged along a second direction different from the first direction.

17. The method of claim 11 , wherein the conductive layer is arranged in a two-dimensional array.

18. 12. The method of claim 11, wherein each of the holes in the conductive layer includes a plurality of first holes and a plurality of second holes, the first holes are arranged along the first direction and a second direction different from the first direction, one of the second holes is between four of the first holes, and a center of one of the second holes is aligned with a center of a line connecting the centers of two adjacent first holes.

19. The method of claim 11 , wherein one of the holes is a concave square.

20. The method of claim 11 , wherein one of the holes comprises two circular holes connected by a rectangular hole.

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