Multiplexer

Abstract

To improve the heat dissipation properties of a filter.SOLUTION: A duplexer 100 includes a substrate 10, a receiving filter 40 provided on the substrate 10 and including series resonators S21 to S23 and parallel resonators P21, P22, a transmitting filter 30 provided on the substrate 10 alongside the receiving filter 40 and including series resonators S11 to S14 and parallel resonators P11 to P14, a lid provided on the substrate 10 and sandwiching a gap 18, where the receiving filter 40 and the transmitting filter 30 are located, between the substrate 10 and the lid, columnar bodies 80b provided in a region 42 of the receiving filter 40 between the substrate 10 and the lid within the gap 18, and columnar bodies 80a provided in a region 32 of the transmitting filter 30 between the substrate 10 and the lid within the gap 18, the number of columnar bodies being greater than the number of columnar bodies 80b.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a multiplexer. [Background technology]

[0002] A configuration is known in which an elastic wave resonator and a frame surrounding the elastic wave resonator are provided on a substrate, a lid is provided on the frame so as to form a gap between the substrate and the lid, and the elastic wave resonator is sealed in the gap by the lid (for example, Patent Document 1). Also known is a configuration in which a columnar body is provided between the substrate and the lid in the gap to prevent the lid from bending (for example, Patent Document 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2014-143640 A [Patent Document 2] Patent Publication No. 2021-52359 Summary of the Invention [Problem to be solved by the invention]

[0004] In a multiplexer, a receiving filter including a plurality of first acoustic wave resonators and a transmitting filter including a plurality of second acoustic wave resonators are sometimes arranged side by side on a substrate. Since a high-power radio frequency signal is applied to the transmitting filter, the transmitting filter generates a large amount of heat, which may damage the second acoustic wave resonator.

[0005] An object of the present invention is to improve the heat dissipation properties of a filter. [Means for solving the problem]

[0006] The present invention is a multiplexer comprising a substrate, a receiving filter provided on the substrate and including an acoustic wave resonator, a transmitting filter provided on the substrate alongside the receiving filter and including an acoustic wave resonator, a lid provided on the substrate and sandwiching a gap between the substrate and the receiving filter in which the receiving filter and the transmitting filter are located, one or more first pillars provided in the gap between the substrate and the lid in the region of the receiving filter, and second pillars having a greater number than the first pillars and provided in the gap between the substrate and the lid in the region of the transmitting filter.

[0007] In the aforementioned configuration, the total area of ​​the second columns in a plan view from above the substrate can be larger than the total area of ​​the first columns in the plan view.

[0008] In the aforementioned configuration, at least one of the second columns can be configured to have a width larger than that of the first columns in a plan view seen from above the substrate.

[0009] In the above configuration, a frame body may be provided between the substrate and the lid, the frame body being arranged around the receiving filter and the transmitting filter in a planar view seen from above the substrate, and a plurality of columns consisting of the first column body and the second column body may be arranged symmetrically with respect to at least one of a line passing through a center of gravity of an inner region of the lid located inside the frame body and extending in the longitudinal direction and a line extending in the lateral direction of the lid.

[0010] In the above configuration, a frame may be provided between the substrate and the lid, the frame being arranged around the receiving filter and the transmitting filter in a plan view seen from above the substrate, and a plurality of columns consisting of the first columnar body and the second columnar body may be arranged in a row at equal intervals in at least one of the longitudinal direction and lateral direction of the lid.

[0011] In the above configuration, the substrate may be provided with a second surface opposite to a first surface on which the transmitting filter and the receiving filter are provided, and may include a plurality of terminals including a common terminal, a receiving terminal, and a transmitting terminal, the receiving filter being connected to a path between the common terminal and the receiving terminal, the transmitting filter being connected to a path between the common terminal and the transmitting terminal, and the first columnar body and the second columnar body being arranged away from the plurality of terminals in a planar view seen from above the substrate.

[0012] In the aforementioned configuration, at least one of the second columns can be provided on a wiring connected to the acoustic wave resonator of the transmit filter.

[0013] In the above configuration, at least one of the first columns and the second columns may be in contact with the lid.

[0014] In the above configuration, the receiving filter and the transmitting filter may be configured to face the lid with the gap therebetween.

[0015] The present invention is a multiplexer comprising a substrate, a first filter provided on the substrate and including an acoustic wave resonator, a second filter provided on the substrate alongside the first filter, including an acoustic wave resonator, and receiving a higher power than the first filter, a lid provided on the substrate and sandwiching a gap between the substrate and the lid in which the first filter and the second filter are located, one or more first pillars provided in the gap between the substrate and the lid in the region of the first filter, and second pillars having more number than the first pillars provided in the gap in the region of the second filter between the substrate and the lid.

[0016] The present invention is a multiplexer comprising: a substrate; a receiving filter provided on the substrate and including an acoustic wave resonator; a transmitting filter provided on the substrate alongside the receiving filter and including an acoustic wave resonator; and a plurality of terminals provided on a second surface of the substrate opposite to a first surface on which the receiving filter and the transmitting filter are provided, the plurality of terminals including a common terminal to which the receiving filter and the transmitting filter are connected, a receiving terminal having the receiving filter connected in a path between the common terminal, and a transmitting terminal having the transmitting filter connected in a path between the common terminal, wherein the total area of ​​the terminals overlapping the region of the transmitting filter in a plan view seen from above the substrate is greater than the total area of ​​the terminals overlapping the region of the receiving filter. Effect of the Invention

[0017] According to the present invention, the heat dissipation property of the filter can be improved. [Brief description of the drawings]

[0018] [Figure 1] 1A and 1B are plan views of a duplexer and a quadplexer according to a first embodiment. [Diagram 2] FIG. 2 is a cross-sectional view of the duplexer and the quadplexer in accordance with the first embodiment. [Diagram 3] FIG. 3(a) is a plan view of the series resonator and the parallel resonator in the first embodiment, and FIG. 3(b) is a cross-sectional view of another example of the series resonator and the parallel resonator. [Figure 4] FIG. 4 is a plan view showing the piezoelectric layer, the frame, the lid, and the columns in the first embodiment. [Diagram 5] 5(a) to 5(d) are cross-sectional views illustrating a manufacturing method of the duplexer and the quadplexer in accordance with the first embodiment. [Figure 6] 6(a) to 6(d) are plan views of models A to D used in the simulation. [Figure 7] 7(a) to 7(d) show the simulation results of models A to D. [Figure 8] FIG. 8(a) is a plan view illustrating the allowable range of equal intervals between multiple pillars in Example 1, and FIGS. 8(b) and 8(c) are enlarged views of regions A and B in FIG. 8(a). [Figure 9] 9(a) and 9(b) are cross-sectional views illustrating the effect of providing the pillars in Example 1 away from the terminals in a plan view. [Figure 10] 10(a) to 10(c) are plan views of duplexers according to the second embodiment to the second modified example of the second embodiment. [Figure 11] 11(a) and 11(b) are plan views of a duplexer according to a third embodiment and a modified example of the third embodiment. [Figure 12] 12(a) and 12(b) are plan views of a duplexer and a quadplexer according to the fourth embodiment. [Figure 13] 13(a) to 13(d) are plan views showing examples of terminal arrangements in the fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS EXAMPLES

[0019] 1(a) and 1(b) are plan views of a duplexer 100 and a quadplexer 110 according to the first embodiment. FIG. 2 is a cross-sectional view of the duplexer 100 and the quadplexer 110 according to the first embodiment. In FIG. 1(a) and 1(b), a lid 70 is shown in a see-through manner, and a frame 60 and wiring 16 are hatched for clarity of the drawings. In FIG. 2, a cross section is shown diagrammatically, and a series resonator and a parallel resonator are shown as surface acoustic wave resonators 50 for clarity of the drawings (the same applies to the following similar drawings).

[0020] As shown in FIG. 2, the piezoelectric layer 20 is bonded to the upper surface of the substrate 10. The substrate 10 is, for example, a sapphire substrate, an alumina substrate, a spinel substrate, a quartz substrate, a crystal substrate, a silicon carbide substrate, or a silicon substrate, and has a thickness of 50 μm to 300 μm. The piezoelectric layer 20 is, for example, a single crystal lithium tantalate layer or a single crystal lithium niobate layer, for example, a rotated Y-cut X-propagation lithium tantalate layer or a rotated Y-cut X-propagation lithium niobate layer. The piezoelectric layer 20 may be, for example, a 30° to 50° Y-cut X-propagation lithium tantalate layer. The thickness of the piezoelectric layer 20 is, for example, 0.5 μm to 30 μm, and is smaller than the wavelength of the main mode acoustic wave (for example, surface acoustic wave) excited by the surface acoustic wave resonator 50. An insulating layer such as silicon oxide, aluminum oxide, and / or aluminum nitride may be provided between the substrate 10 and the piezoelectric layer 20. In this manner, the piezoelectric layer 20 is directly or indirectly bonded to the upper surface of the substrate 10.

[0021] 1(a), in the duplexer 100, the series resonators S11 to S14 and the parallel resonators P11 to P14 included in the transmit filter 30, and the series resonators S21 to S23 and the parallel resonators P21 and P22 included in the receive filter 40 are provided on the upper surface of the piezoelectric layer 20. The transmit filter 30 and the receive filter 40 are provided side by side on the upper surface of the piezoelectric layer 20.

[0022] FIG. 3(a) is a plan view of the series resonator and the parallel resonator in the first embodiment. As shown in FIG. 3(a), the series resonator and the parallel resonator in the first embodiment are surface acoustic wave resonators 50. An IDT (Interdigital Transducer) 51 and a reflector 52 are provided on the upper surface of the piezoelectric layer 20. The IDT 51 has a pair of opposing comb electrodes 53. The comb electrode 53 has a plurality of electrode fingers 54 and a bus bar 55 to which the plurality of electrode fingers 54 are connected. The reflectors 52 are provided on both sides of the IDT 51. The plurality of electrode fingers 54 excite a surface acoustic wave in the piezoelectric layer 20. The pitch of the electrode fingers 54 of one of the pair of comb electrodes 53 is approximately the wavelength λ of the acoustic wave. The pitch D of the plurality of electrode fingers 54 is approximately twice the wavelength λ of the acoustic wave. The IDT 51 and the reflector 52 are formed of a metal film such as aluminum, copper, or molybdenum. A protective film or a temperature compensation film covering the IDT 51 and the reflector 52 may be provided on the upper surface of the piezoelectric layer 20. The comb-shaped electrode 53 may have dummy electrode fingers.

[0023] FIG. 3(b) is a cross-sectional view of another example of the series resonator and the parallel resonator in the first embodiment. As shown in FIG. 3(b), the series resonator and the parallel resonator may be a piezoelectric thin film resonator 50a. A piezoelectric layer 20 is provided on a substrate 10, and a lower electrode 56 and an upper electrode 57 are provided to sandwich the piezoelectric layer 20. A gap 58 is formed between the lower electrode 56 and the substrate 10. A region where the lower electrode 56 and the upper electrode 57 face each other with at least a part of the piezoelectric layer 20 sandwiched therebetween is a resonance region 59. In the resonance region 59, the lower electrode 56 and the upper electrode 57 excite an elastic wave in the piezoelectric layer 20. The lower electrode 56 and the upper electrode 57 are metal films including, for example, a ruthenium film. The piezoelectric layer 20 is, for example, an aluminum nitride layer, a zinc oxide layer, a single crystal lithium tantalate layer, or a single crystal lithium niobate layer. An acoustic reflection film that reflects an elastic wave may be provided instead of the gap 58.

[0024] 2, a plurality of terminals 12 are provided on the lower surface of the substrate 10. The plurality of terminals 12 are foot pads for electrically connecting the transmit filter 30 and the receive filter 40 to the outside, and include a common terminal Ant, a transmit terminal Tx, a receive terminal Rx, and a ground terminal GND.

[0025] 1(a), the series resonators S11 to S14 included in the transmit filter 30 are connected in series between a common terminal Ant and a transmit terminal Tx via a via wiring 14 penetrating the substrate 10 and a wiring 16 provided on the substrate 10. One end of the parallel resonators P11 to P14 is connected to the wiring 16 that connects the series resonators S11 to S14, and the other end is connected to the ground terminal GND via the wiring 16 and the via wiring 14. That is, the parallel resonators P11 to P14 are connected in parallel between the common terminal Ant and the transmit terminal Tx.

[0026] The series resonators S21 to S23 included in the receiving filter 40 are connected in series between the common terminal Ant and the receiving terminal Rx via the via wiring 14 and the wiring 16. One end of the parallel resonators P21 and P22 is connected to the wiring 16 that connects the series resonators S21 to S23, and the other end is connected to the ground terminal GND via the wiring 16 and the via wiring 14. That is, the parallel resonators P21 and P22 are connected in parallel between the common terminal Ant and the receiving terminal Rx.

[0027] The transmission filter 30 connected between the common terminal Ant and the transmission terminal Tx passes the transmission band signal among the high frequency signals input from the transmission terminal Tx to the common terminal Ant as a transmission signal, and suppresses signals of other frequencies. The reception filter 40 connected between the common terminal Ant and the reception terminal Rx passes the reception band signal among the high frequency signals input from the common terminal Ant to the reception terminal Rx as a reception signal, and suppresses signals of other frequencies. The number of series resonators and parallel resonators can be set as appropriate.

[0028] The terminal 12, the via wiring 14, and the wiring 16 are metal layers containing, for example, titanium, copper, aluminum, platinum, nickel, and / or gold, etc. The terminal 12, the via wiring 14, and the wiring 16 may be a single metal layer or a laminated metal layer in which multiple layers are laminated.

[0029] As shown in FIG. 1(a) and FIG. 2, the piezoelectric layer 20 is not provided in the peripheral region of the substrate 10. In a plan view, a frame 60 is provided on the substrate 10 so as to surround the piezoelectric layer 20 and the transmission filter 30 and the reception filter 40 provided on the upper surface of the piezoelectric layer 20. The frame 60 is provided on the substrate 10 away from the piezoelectric layer 20. The frame 60 includes a metal layer 62 and a bonding layer 64. The metal layer 62 is in contact with the substrate 10. The bonding layer 64 is provided on the metal layer 62. The metal layer 62 is a metal layer containing, for example, copper, nickel, kovar, gold, aluminum, and / or tungsten. The metal layer 62 may be a single layer, or multiple layers may be laminated. The bonding layer 64 is a brazing metal layer such as gold-tin, silver-tin, tin, or tin-silver-copper.

[0030] A lid 70 is provided on the frame 60 such that a gap 18 is formed between the frame 60 and the substrate 10. The lid 70 is bonded to a bonding layer 64 of the frame 60. The transmit filter 30 and the receive filter 40 face the lid 70 across the gap 18. The transmit filter 30 and the receive filter 40 are sealed in the gap 18 by the frame 60 and the lid 70. The lid 70 includes a metal layer such as an iron alloy such as kovar, 42 alloy, or stainless steel, an aluminum alloy such as duralumin, nickel, copper, or nickel silver. These metal layers of the lid 70 are exposed to the gap 18.

[0031] The lid 70 may include an insulating layer such as sapphire, alumina, spinel, quartz, crystal, silicon carbide, silicon, glass, diamond-like carbon (DLC), flame retardant type 4 (FR4), low temperature co-fired ceramics (LTCC), high temperature co-fired ceramics (HTCC), fiber reinforced plastics (FRP), etc. These insulating layers are provided on the opposite side of the metal layer from the gap 18.

[0032] The piezoelectric layer 20 has a plurality of through holes 22 penetrating the piezoelectric layer 20 from the upper surface to the lower surface. The through holes 22 are provided, for example, in a portion of the piezoelectric layer 20 in an open shape. In each of the plurality of through holes 22, a pillar 80 made of, for example, metal is provided between the substrate 10 and the lid 70. That is, the pillar 80 is provided between the substrate 10 and the lid 70 in the gap 18. The pillar 80 is provided away from the piezoelectric layer 20. The pillar 80 includes a metal layer 82 and a bonding layer 84. The metal layer 82 is in contact with the substrate 10 or the wiring 16. The bonding layer 84 is provided on the metal layer 82. The metal layer 82 is a metal layer containing, for example, copper, nickel, kovar, gold, aluminum, and / or tungsten, and is formed of the same material as the metal layer 62, for example. The metal layer 82 may be a single layer, or multiple layers may be laminated. The bonding layer 84 is a brazing metal layer such as gold-tin, silver-tin, tin, or tin-silver-copper, and is formed of the same material as the bonding layer 64, for example. The lid 70 is bonded to the bonding layer 84 of the columnar body 80.

[0033] The plurality of pillars 80 include pillars 80a provided in the region 32 of the transmit filter 30 and pillars 80b provided in the region 42 of the receive filter 40. The region 32 of the transmit filter 30 is a region in which the components of the transmit filter 30 (series resonators and parallel resonators, and wiring connected thereto) are provided in a plan view. The region 42 of the receive filter 40 is a region in which the components of the receive filter 40 (series resonators and parallel resonators, and wiring connected thereto) are provided in a plan view. The boundary between the region 32 of the transmit filter 30 and the region 42 of the receive filter 40 is defined by a line located midway between the components of the transmit filter 30 and the receive filter 40 (series resonators and parallel resonators, and wiring connected thereto). The common wiring 16 of the transmit filter 30 and the receive filter 40 is defined by a line located midway between them. The region 32 of the transmit filter 30 is larger than the region 42 of the receive filter 40, for example.

[0034] The number of the pillars 80a provided in the region 32 of the transmit filter 30 is greater than the number of the pillars 80b provided in the region 42 of the receive filter 40. The pillars 80 have, for example, the same shape and size. Therefore, the total area of ​​the pillars 80a in plan view is greater than the total area of ​​the pillars 80b in plan view. In other words, the total area of ​​the surfaces of the pillars 80a on the lid 70 side is greater than the total area of ​​the surfaces of the pillars 80b on the lid 70 side. Although the example shows a case where the pillars 80b are provided in the region 42 of the receive filter 40, it is sufficient that one or more pillars 80b are provided. At least one of the pillars 80a is sandwiched between any of the series resonators S11 to S14 and the parallel resonators P11 to P14. At least one of the multiple pillars 80a is provided in a region surrounded by the series resonators S11-S14, the parallel resonators P11-P14, and the wiring 16. When the pillar 80 is provided across the region 32 of the transmit filter 30 and the region 42 of the receive filter 40, it is assumed that the pillar 80 is provided in either the region 32 or the region 42, whichever region has the larger pillar 80.

[0035] 4 is a plan view showing the piezoelectric layer 20, frame 60, lid 70, and columnar body 80 in Example 1. As shown in FIG. 4, frame 60 surrounds the periphery of piezoelectric layer 20 in a rectangular frame shape. Therefore, the surface of inner region 72 (hatched portion) of lid 70 located inside frame 60 on the substrate 10 side is rectangular. The rectangular shape includes cases where the apex is rounded and / or each side is curved. Inner region 72 of lid 70 is exposed to gap 18.

[0036] The multiple pillars 80 are provided symmetrically with respect to a straight line 74 that passes through the center of gravity 78 of the inner region 72 of the lid 70 and extends in the longitudinal direction of the lid 70 and a straight line 76 that extends in the lateral direction. The multiple pillars 80 are also provided side by side at equal intervals in the longitudinal direction of the lid 70.

[0037] The width of the frame 60 is, for example, 20 μm to 30 μm, and the height is, for example, 10 μm to 30 μm. The length and width of the pillars 80 are, for example, 20 μm to 30 μm, and the height is, for example, 10 μm to 30 μm, which is, for example, the same as the height of the frame 60. The length of the lid 70 is, for example, 1.8 mm in the longitudinal direction and 1.4 mm in the lateral direction.

[0038] Although the duplexer 100 has been mainly described so far, the quadplexer 110 shown in Fig. 1(b) has the same configuration except for the transmission filter 30a and the reception filter 40a. As shown in Fig. 1(b), in the quadplexer 110, the transmission filter 30a includes series resonators S31 to S33 and parallel resonators P31 and P32 connected between the common terminal Ant and the first transmission terminal Tx1, and series resonators S41 to S43 and parallel resonators P41 and P42 connected between the common terminal Ant and the second transmission terminal Tx2. The reception filter 40a includes series resonators S51 and S52 and parallel resonators P51 and P52 connected between the common terminal Ant and the first reception terminal Rx1, and series resonators S61 and S62 and parallel resonators P61 and P62 connected between the common terminal Ant and the second reception terminal Rx2.

[0039] [Manufacturing method] 5(a) to 5(d) are cross-sectional views showing a manufacturing method of the duplexer 100 and the quadplexer 110 according to the first embodiment. As shown in FIG. 5(a), a via is formed on the upper surface of the substrate 10 by irradiating the upper surface with, for example, a laser beam, and a metal layer such as copper is formed in the via by, for example, a plating method. Then, the metal layer is planarized by, for example, a chemical mechanical polishing (CMP) method so that the upper surface of the substrate 10 is exposed, and a via wiring 14 is formed on the substrate 10. Next, a piezoelectric substrate is bonded to the upper surface of the substrate 10 at room temperature by, for example, a surface activation method. The substrate 10 and the piezoelectric substrate may be directly bonded via an amorphous layer of several nm or the like, or may be indirectly bonded via an insulating layer. Then, the piezoelectric substrate is polished by, for example, a CMP method, to form a piezoelectric layer 20 bonded directly or indirectly to the upper surface of the substrate 10.

[0040] 5(b), a part of the piezoelectric layer 20 is removed by, for example, etching. As a result, the piezoelectric layer 20 in the peripheral region of the substrate 10 is removed, and through-holes 22 are formed in the piezoelectric layer 20. Next, in the duplexer 100, the series resonators S11 to S14 and parallel resonators P11 to P14 of the transmission filter 30 and the series resonators S21 to S23 and parallel resonators P21 and P22 of the reception filter 40 are formed on the upper surface of the piezoelectric layer 20. In the quadplexer 110, the series resonators S31 to S33, S41 to S43 and parallel resonators P31, P32, P41, and P42 of the transmission filter 30a and the series resonators S51, S52, S61, and S62 and parallel resonators P51, P52, P61, and P62 of the reception filter 40a are formed on the upper surface of the piezoelectric layer 20. Here, these series resonators and parallel resonators are illustrated as surface acoustic wave resonators 50. Furthermore, wiring 16 is formed to connect these series resonators and parallel resonators.

[0041] 5(c), a frame 60 is formed on the upper surface of the substrate 10 so as to surround the piezoelectric layer 20. Simultaneously with the formation of the frame 60, pillars 80 are formed on the substrate 10 in the through-holes 22 of the piezoelectric layer 20. Next, a lid 70 is bonded to the frame 60 and the pillars 80. As a result, the transmit filter 30 and the receive filter 40 are sealed in the gap 18 by the frame 60 and the lid 70.

[0042] 5(d), the lower surface of the substrate 10 is polished, for example, by CMP. As a result, the via wirings 14 are exposed from the lower surface of the substrate 10. Terminals 12 connected to the via wirings 14 are formed on the lower surface of the substrate 10. In this manner, the duplexer 100 and the quadplexer 110 according to the first embodiment are formed.

[0043] [simulation] A simulation was performed on the amount of deflection when pressure is applied from the outside to the upper surface of the lid 70. Figures 6(a) to 6(d) are plan views of models A to D on which the simulation was performed. As shown in Figures 6(a) to 6(d), the simulation was performed on a simple model that only considered the substrate 10, the frame 60, the lid 70, and the pillars 80. In Figures 6(a) to 6(d), the lid 70 provided on the frame 60 is represented by hatching. Model A corresponds to a comparative example, in which no pillars are provided. Models B to D correspond to Example 1, in which a plurality of pillars 80 are provided between the substrate 10 and the lid 70 and in contact with the substrate 10 and the lid 70. In Model B, the plurality of pillars 80 are arranged in a lattice pattern. In Model C, the plurality of pillars 80 are arranged in a cross shape. In Model D, the plurality of pillars 80 are arranged so that some of them are missing from the lattice pattern.

[0044] The simulation conditions are as follows. Common conditions for models A to D Substrate 10: sapphire substrate with a thickness of 75 μm Lid 70: 30μm thick Kovar layer Pressure applied to the top surface of the lid 70: 6MPa (assuming pressure in a resin mold) Length of the substrate 10 L1: 1.8 mm Length of the substrate 10 L2: 1.4 mm Width of frame 60: 0.019 mm Distance D between frame 60 and edge of substrate 10: 0.0115 mm Model A Conditions Metal layer 62 of frame 60: a copper (Cu) layer having a thickness of 300 μm and a nickel (Ni) layer having a thickness of 2.5 μm Bonding layer 64 of frame 60: gold-tin (AuSn) layer with a thickness of 5 μm Common conditions for models B to D Metal layer 62 of frame 60: a copper (Cu) layer having a thickness of 21 μm and a nickel (Ni) layer having a thickness of 2.5 μm Bonding layer 64 of frame 60: gold-tin (AuSn) layer with a thickness of 5 μm Metal layer 82 of columnar body 80: a copper (Cu) layer having a thickness of 21 μm and a nickel (Ni) layer having a thickness of 2.5 μm Bonding layer 84 of columnar body 80: gold-tin (AuSn) layer with a thickness of 5 μm Widths W11 and W12 of the columnar body 80: 46 μm Model B Conditions Distance between columns 80 D11: 0.295 mm Distance between columns 80 D12: 0.383 mm Distance D13 between columnar body 80 and frame body 60: 0.306 mm Distance D14 between columnar body 80 and frame body 60: 0.418 mm Model C Conditions Distance between columns 80 D21: 0.295 mm Distance between columns 80 D22: 0.383 mm Distance D23 between columnar body 80 and frame body 60: 0.306 mm Distance D24 between columnar body 80 and frame body 60: 0.418 mm Model D Conditions The columnar body 80 at the illustrated location was removed from the conditions of Model B.

[0045] Table 1 shows the Young's modulus, linear expansion coefficient, and Poisson's ratio of each material used in the simulation. [Table 1]

[0046] Figures 7(a) to 7(d) show the simulation results of models A to D. Figures 7(a) to 7(d) are contour maps showing the amount of displacement of the underside of the lid 70 from the reference position before pressure is applied as the amount of deflection of the lid 70 after pressure is applied, with the underside of the lid 70 set as the reference position.

[0047] As shown in FIG. 7(a), in model A in which no pillars were provided, the lid 70 was largely deflected, with the maximum deflection amount being 270 μm at the center of the lid 70.

[0048] As shown in Figures 7(b) to 7(d), in models B to D in which the columnar bodies 80 were provided, the deflection of the lid 70 was significantly suppressed compared to model A. The maximum deflection of the lid 70 in model B was 3.9 µm. The maximum deflection of the lid 70 in model C was 13.1 µm. The maximum deflection of the lid 70 in model D was 21.6 µm.

[0049] According to the first embodiment, as shown in Fig. 1(a), a transmit filter 30 including series resonators S11-S14 and parallel resonators P11-P14 and a receive filter 40 including series resonators S21-S23 and parallel resonators P21, P22 are provided side by side on a substrate 10. Alternatively, as shown in Fig. 1(b), a transmit filter 30a including series resonators S31-S33, S41-S43 and parallel resonators P31, P32, P41, P42 and a receive filter 40a including series resonators S51, S52, S53, S54 and parallel resonators P51, P52, P61, P62 are provided side by side on a substrate 10. A lid 70 is provided on a frame 60 provided around the transmit filters 30, 30a and the receive filters 40, 40a in a plan view, and sandwiches a gap 18 between the frame 60 and the substrate 10, in which the transmit filters 30, 30a and the receive filters 40, 40a are located. In the gap 18, between the substrate 10 and the lid 70, pillars 80a (second pillars) are provided in the region 32 of the transmit filters 30, 30a, and pillars 80b (first pillars) are provided in the region 42 of the receive filters 40, 40a. By providing the pillars 80a, 80b between the substrate 10 and the lid 70 in the gap 18, as shown in the above simulation results, it is possible to reduce the deflection of the lid 70 even when pressure is applied to the lid 70 from the outside. This prevents the lid 70 from coming into contact with or approaching the transmit filters 30, 30a and the receive filters 40, 40a, thereby suppressing deterioration of the characteristics.

[0050] According to the first embodiment, the number of the pillars 80a provided in the region 32 of the transmit filters 30 and 30a is greater than the number of the pillars 80b provided in the region 42 of the receive filters 40 and 40a. The transmit filters 30 and 30a generate a large amount of heat because they are filters to which a high-power high-frequency signal is applied. Heat generated in the resonator of the transmit filters 30 and 30a is dissipated toward the pillars 80 as shown by the arrows in FIG. 2. Whether the pillars 80 are provided in contact with the wiring 16 or the substrate 10, the heat generated in the resonator is dissipated toward the pillars 80. However, when the pillars 80 are provided in contact with the wiring 16, the heat is more easily dissipated toward the pillars 80. Therefore, it is preferable that at least one of the pillars 80a is provided on the wiring 16. By increasing the number of columns 80a provided in the region 32 of the transmit filter 30, 30a, more heat generated in the transmit filter 30, 30a is dissipated toward the columns 80a, improving heat dissipation. This makes it possible to prevent damage to the resonators of the transmit filter 30, 30a. The number of columns 80a provided in the region 32 of the transmit filter 30, 30a is preferably 1.5 times or more, more preferably 2 times or more, and even more preferably 3 times or more, the number of columns 80b provided in the region 42 of the receive filter 40, 40a.

[0051] In the first embodiment, the total area of ​​the columns 80a provided in the region 32 of the transmit filters 30, 30a in a plan view from above the substrate 10 is greater than the total area of ​​the columns 80b provided in the region 42 of the receive filters 40, 40a in a plan view from above the substrate 10. This improves heat dissipation through the columns 80a, thereby preventing damage to the resonators of the transmit filters 30, 30a. The total area of ​​the columns 80a provided in the region 32 of the transmit filters 30, 30a in a plan view is preferably 1.5 times or more, more preferably 2 times or more, and even more preferably 3 times or more, of the total area of ​​the columns 80b provided in the region 42 of the receive filters 40, 40a in a plan view.

[0052] 4, the multiple pillars 80 are arranged symmetrically with respect to a straight line 74 that passes through the center of gravity 78 of the inner region 72 of the lid 70 and extends in the longitudinal direction of the lid 70 and a straight line 76 that extends in the lateral direction. This makes it possible to reduce the deflection of the lid 70, as in models B and C in the above simulation. Note that the multiple pillars 80 may be arranged symmetrically with respect to either the straight line 74 or the straight line 76.

[0053] In the first embodiment, as shown in FIG. 4, the plurality of pillars 80 are arranged at equal intervals in the longitudinal direction of the lid 70. This can reduce the deflection of the lid 70, as in the models B and C in the above simulation. The plurality of pillars 80 may be arranged at equal intervals in the lateral direction of the lid 70, or may be arranged at equal intervals in both the longitudinal and lateral directions. The equal intervals allow the following range. FIG. 8(a) is a plan view illustrating the allowable range of the equal intervals of the plurality of pillars 80 in the first embodiment, and FIG. 8(b) and FIG. 8(c) are enlarged views of regions A and B in FIG. 8(a). As shown in FIG. 8(a) to FIG. 8(c), when some of the plurality of pillars 80 are within the range of the width W of the pillars 80 based on the position of the adjacent pillars 80, the plurality of pillars 80 are arranged at equal intervals.

[0054] In the first embodiment, as shown in FIG. 1(a) and FIG. 1(b), the pillars 80a and 80b (i.e., the pillars 80) are provided away from the terminals 12 in a plan view seen from above the substrate 10. FIG. 9(a) and FIG. 9(b) are cross-sectional views for explaining the effect of providing the pillars 80 away from the terminals 12 in a plan view in the first embodiment. FIG. 9(a) illustrates a case where no pillars are provided, and FIG. 9(b) illustrates a case where the pillars 80 are provided away from the terminals 12 in a plan view. As shown in FIG. 9(a), when the substrate 10 is mounted on the mounting substrate 90 and then sealed with the mold resin 92, the force indicated by the arrows is applied to the substrate 10 and the lid 70, etc. Since a force is also applied to the surface of the substrate 10 on which the terminals 12 are provided, if the pillars 80 are not provided, the substrate 10 will be deformed into a convex shape. This may cause cracks 94, etc. to occur in the substrate 10. 9(b), by providing the pillars 80 away from the terminals 12 in a plan view, even if a force is applied to the surface of the substrate 10 on which the terminals 12 are provided, the pillars 80 prevent the substrate 10 from deforming into a convex shape. This makes it possible to prevent cracks and the like from occurring in the substrate 10.

[0055] When terminals 12 are provided on opposing sides of substrate 10, in order to suppress cracks in substrate 10, the distance X between columnar body 80 and terminal 12 is preferably 1 / 20 or more of the distance L between the opposing sides of substrate 10, more preferably 1 / 15 or more, and even more preferably 1 / 10 or more.

[0056] 2, the multiple columns 80a and the multiple columns 80b (i.e., the columns 80) are in contact with the lid 70. This reduces the deflection of the lid 70. Note that the contact is not limited to the case where all of the multiple columns 80a and all of the multiple columns 80b are in contact with the lid 70, and at least one of the multiple columns 80a and the multiple columns 80b may be in contact with the lid 70. EXAMPLES

[0057] Fig. 10(a) is a plan view of a duplexer 200 according to the second embodiment, Fig. 10(b) is a plan view of a duplexer 210 according to a first modified example of the second embodiment, and Fig. 10(c) is a plan view of a duplexer 220 according to a second modified example of the second embodiment. For clarity of illustration, Figs. 10(a) to 10(c) only show the substrate 10, the region 32 of the transmit filter 30, the region 42 of the receive filter 40, the frame 60, and the columnar body 80.

[0058] 10(a), in a duplexer 200 according to the second embodiment, the multiple pillars 80 are arranged in a staggered pattern and are provided symmetrically with respect to a straight line 74 that passes through a center of gravity 78 of an inner region 72 (hatched portion) of the lid 70 and extends in the longitudinal direction of the lid 70 and a straight line 76 that extends in the lateral direction. At least one of the multiple pillars 80a provided in the region 32 of the transmit filter 30 has a larger width in a plan view than the multiple pillars 80b provided in the region 42 of the receive filter 40. The other configurations are the same as those of the first embodiment, and therefore will not be described.

[0059] 10(b), in the duplexer 210 according to the first modification of the second embodiment, in addition to the multiple pillars 80 arranged in a staggered pattern, the region 32 of the transmit filter 30 includes pillars 86 arranged in a non-staggered pattern. The pillars 86 have the same shape as the pillars 80 in a plan view. The width of the pillars 86 may be larger, the same as, or smaller than that of the pillars 80b in the region 42 of the receive filter 40 in a plan view.

[0060] 10(c), in a duplexer 220 according to the second modification of the second embodiment, a columnar body 87 having a different shape and size in a plan view from the columnar body 80 is provided beside the frame body 60. The columnar body 87 may be wider or narrower than the columnar body 80 in a plan view.

[0061] According to the second embodiment and its modification, at least one of the plurality of columns 80a, 86, 87 provided in the region 32 of the transmit filter 30 has a width larger than that of the plurality of columns 80b provided in the region 42 of the receive filter 40 in a plan view. This improves heat dissipation through the columns 80a, 86, 87. The area of ​​the large columns 80a, 86, 87 in a plan view is preferably 1.5 times or more, more preferably 2.0 times or more, and even more preferably 3.0 times or more, the area of ​​the column 80b in a plan view. Note that the smallest width of the plurality of columns 80a, 86, 87 in a plan view may be larger than the largest width of the plurality of columns 80b in a plan view.

[0062] Although the second embodiment and its modified example are directed to a duplexer, they can also be applied to a quadplexer as shown in FIG. 1(b). EXAMPLES

[0063] FIG. 11(a) is a plan view of a duplexer 300 according to a third embodiment, and FIG. 11(b) is a plan view of a duplexer 310 according to a modified example of the third embodiment. In FIG. 11(a) and FIG. 11(b), for clarity of the drawings, only the substrate 10, the region 32 of the transmission filter 30, the region 42 of the reception filter 40, the frame 60, and the pillars 80 are illustrated. As shown in FIG. 11(a), in the duplexer 300 according to the third embodiment, the pillars 80 are arranged in a staggered arrangement with some of them missing. The frame 60 has an annular portion 66 and a protruding portion 68 protruding inward from the annular portion 66. For example, the protruding portion 68 protrudes from the annular portion 66 toward a position corresponding to the portion of the pillars 80 missing from the staggered arrangement. The total area, in plan view, of the multiple pillars 80a and the protrusion 68 provided in the region 32 of the transmit filter 30 is greater than the total area, in plan view, of the multiple pillars 80b and the protrusion 68 provided in the region 42 of the receive filter 40. The other configurations are the same as those of the first embodiment, and therefore description thereof will be omitted.

[0064] 11(b), in a duplexer 310 according to a modification of the third embodiment, a plurality of pillars 80 are arranged in a cross shape. A plurality of protrusions 68 of the frame 60 are provided on each side of the substrate 10 symmetrically with respect to the straight lines 74 and 76.

[0065] As in the third embodiment and its modified example, the frame 60 has protruding portions 68 that protrude inward, which can also reduce the deflection of the lid 70. When a plurality of protruding portions 68 are provided on each side of the substrate 10 as in the modified example of the third embodiment, the deformation area of ​​the lid 70 becomes smaller, which can also reduce the deflection of the lid 70.

[0066] Although the third embodiment and its modified example are directed to a duplexer, they can also be applied to a quadplexer as shown in FIG. 1(b). EXAMPLES

[0067] 12(a) and 12(b) are plan views of a duplexer 400 and a quadplexer 410 according to the fourth embodiment. In FIG. 12(a) and FIG. 12(b), the lid 70 is shown in a see-through manner, and the frame 60 and the wiring 16 are hatched for clarity. As shown in FIG. 12(a) and FIG. 12(b), in the fourth embodiment, the common terminal Ant is provided near the region 42 of the receiving filters 40 and 40a. Terminals 12 are also provided in the middle of the opposing sides in the short direction of the substrate 10. In a plan view, the number of terminals 12 provided overlapping the region 32 of the transmitting filters 30 and 30a is greater than the number of terminals 12 provided overlapping the region 42 of the receiving filters 40 and 40a. Therefore, in a plan view, the total area of ​​the terminals 12 overlapping the region 32 of the transmitting filters 30, 30a is greater than the total area of ​​the terminals 12 overlapping the region 42 of the receiving filters 40, 40a. The terminal NC is a non-connection terminal. The other configurations are the same as those in the first embodiment, so the description will be omitted.

[0068] 13(a) to 13(d) are plan views showing examples of the arrangement of the terminals 12 in the fourth embodiment. In FIG. 13(a) to 13(d), for clarity of the drawings, only the substrate 10, the terminals 12, the region 32 of the transmitting filter 30, 30a, the region 42 of the receiving filter 40, 40a, and the frame 60 are shown. As shown in FIG. 13(a), the terminals 12 may be arranged at equal intervals in the longitudinal direction of the substrate 10 and at equal intervals in the lateral direction. This is the same as FIG. 12(a) and FIG. 12(b). As shown in FIG. 13(b), the terminals 12 may be provided only at the four corners and the center of each side of the substrate 10. As shown in FIG. 13(c) and FIG. 13(d), a terminal 12 larger than the other terminals 12 may be provided in the central region of the substrate 10.

[0069] According to the fourth embodiment, in a plan view, the total area of ​​the terminals 12 provided to overlap the region 32 of the transmit filters 30 and 30a is larger than the total area of ​​the terminals 12 provided to overlap the region 42 of the receive filters 40 and 40a. This improves heat dissipation through the terminals 12 in the transmit filters 30 and 30a, thereby suppressing damage to the resonators of the transmit filters 30 and 30a. The total area of ​​the terminals 12 provided in the region 32 of the transmit filters 30 and 30a in a plan view is preferably 1.5 times or more, more preferably 2 times or more, and even more preferably 3 times or more, of the total area of ​​the terminals 12 provided in the region 42 of the receive filters 40 and 40a in a plan view. Note that, when the terminals 12 are provided across the region 32 of the transmit filter 30 and the region 42 of the receive filter 40, the terminals 12 are provided in the region 32 or the region 42 in which the terminals 12 are provided larger.

[0070] In the first to fourth embodiments, the multiplexer is not limited to a duplexer or a quadplexer, but may be a triplexer or the like.

[0071] In the first to fourth embodiments, the planar shape of the pillar 80 is not limited to a rectangular shape, and various shapes can be adopted. For example, a circular shape, an elliptical shape, a diamond shape, a cross shape, a doughnut shape, etc. are also acceptable. The side shape of the pillar 80 is also not limited to a rectangular shape, and various shapes can be adopted. For example, a trapezoid, an inverted trapezoid, a shape with a depression or bulge in the center, etc. are also acceptable.

[0072] Although the embodiment of the present invention has been described in detail above, the present invention is not limited to such specific embodiment, and various modifications and variations are possible within the scope of the gist of the present invention described in the claims. [Explanation of symbols]

[0073] 10...substrate, 12...terminal, 14...via wiring, 16...wiring, 18...gap, 20...piezoelectric layer, 22...through hole, 30, 30a...transmitting filter, 32...transmitting filter region, 40, 40a...receiving filter, 42...receiving filter region, 50...surface acoustic wave resonator, 50a...piezoelectric thin film resonator, 51...IDT, 52...reflector, 53...comb-shaped electrode, 54...electrode finger, 55...bus bar, 56...lower electrode, 57...upper electrode, 58...gap, 59...resonating region, 60...frame, 62 ...metal layer, 64...bonding layer, 66...annular portion, 68...protruding portion, 70...lid, 72...inner region, 74, 76...straight line, 78...centre of gravity, 80, 80a, 80b...columnar body, 82...metal layer, 84...bonding layer, 86...columnar body, 87...columnar body, 90...mounting substrate, 92...molding resin, 94...crack, 100...duplexer, 110...quadplexer, 200, 210, 220, 300, 310...duplexer, 400...duplexer, 410...quadplexer

Claims

1. A substrate; a receiving filter provided on the substrate and including an acoustic wave resonator; a transmit filter provided on the substrate alongside the receive filter and including an acoustic wave resonator; a lid provided on the substrate, sandwiching a gap between the substrate and a lid in which the receiving filter and the transmitting filter are located; one or more first pillars disposed in the gap between the substrate and the lid in a region of the receiving filter; a second columnar body having a greater number than the first columnar bodies, the second columnar body being provided in the gap between the substrate and the lid in a region of the transmission filter.

2. 2 . The multiplexer according to claim 1 , wherein a total area of ​​the second columns in a plan view from above the substrate is larger than a total area of ​​the first columns in the plan view.

3. 3. The multiplexer according to claim 1, wherein at least one of the second columns has a width greater than that of the first columns in a plan view seen from above the substrate.

4. a frame provided between the substrate and the lid and surrounding the receiving filter and the transmitting filter in a plan view seen from above the substrate; 3. The multiplexer according to claim 1, wherein the plurality of columns consisting of the first column and the second column are arranged symmetrically with respect to at least one of a line passing through the center of gravity of an inner region of the lid located inside the frame body and extending in the longitudinal direction and a line extending in the short direction of the lid.

5. a frame provided between the substrate and the lid and surrounding the receiving filter and the transmitting filter in a plan view seen from above the substrate; 3. The multiplexer according to claim 1, wherein a plurality of columns made up of the first columns and the second columns are arranged at equal intervals in at least one of a longitudinal direction and a lateral direction of the lid.

6. a second surface of the substrate opposite to a first surface on which the transmission filter and the reception filter are provided, the second surface including a common terminal, a reception terminal, and a transmission terminal; the receiving filter is connected to a path between the common terminal and the receiving terminal; the transmission filter is connected to a path between the common terminal and the transmission terminal; 3. The multiplexer according to claim 1, wherein the first columnar body and the second columnar body are provided away from the plurality of terminals in a plan view seen from above the substrate.

7. 3 . The multiplexer according to claim 1 , wherein at least one of the second columns is provided on a wiring connected to the acoustic wave resonator of the transmit filter.

8. The multiplexer of claim 1 , wherein at least one of the first pillars and the second pillars is in contact with the lid.

9. The multiplexer according to claim 1 , wherein the receiving filter and the transmitting filter face the lid via the gap.

10. A substrate; a first filter provided on the substrate and including an acoustic wave resonator; a second filter provided on the substrate next to the first filter, the second filter including an acoustic wave resonator, and receiving a larger power than the first filter; a lid provided on the substrate, sandwiching a gap between the substrate and a lid in which the first filter and the second filter are located; one or more first pillars disposed in a region of the first filter between the substrate and the lid in the gap; a second columnar body that is greater in number than the first columnar bodies and that is provided in a region of the second filter between the substrate and the lid in the gap;

11. A substrate; a receiving filter provided on the substrate and including an acoustic wave resonator; a transmit filter provided on the substrate alongside the receive filter and including an acoustic wave resonator; a multiplexer comprising: a plurality of terminals provided on a second surface of the substrate opposite to a first surface on which the receiving filter and the transmitting filter are provided, the multiple terminals including a common terminal to which the receiving filter and the transmitting filter are connected, a receiving terminal having the receiving filter connected in a path between the common terminal and the receiving terminal, and a transmitting terminal having the transmitting filter connected in a path between the common terminal and the receiving terminal, wherein a total area of ​​the terminals overlapping the region of the transmitting filter in a plan view seen from above the substrate is greater than a total area of ​​the terminals overlapping the region of the receiving filter.

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