Plasma processing apparatus

Abstract

To provide a plasma processing apparatus which can be easily manufactured and can reduce a manufacturing cost.SOLUTION: A plasma processing apparatus includes: a dielectric layer 11; a plasma generation part 10 that provides at least a pair of electrode layers 12 and 13 to be provided to a front side and a back side of the dielectric layer 11; a power supply part that applies an AC voltage to the pair of electrode layers 12 and 13; and a gas flow part that flows a gas to the plasma generation part 10 in order to process the gas with a plasma. The plasma generation part 10 comprises the dielectric layer 11 only to one electrode layer, and comprises a gas inflow layer 18 in which the gas flows between the other electrode layer and the dielectric layer 11.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a plasma processing apparatus.

Background Art

[0002] In recent years, regarding plasma processing technology, a method called Dielectric Barrier Discharge has been developed, enabling the generation of low-temperature plasma under atmospheric pressure. As a result, the application range of plasma processing has expanded, and it is being increasingly used in various applications. The purposes of plasma processing include sterilization, deodorization, surface modification, decomposition of chemical substances, etc. Also, the substances to be subjected to plasma processing can be any of solids, liquids, and gases.

[0003] In order to continuously perform plasma processing while flowing air, various plasma processing apparatuses have been developed. For example, Patent Document 1 discloses a plasma generation apparatus provided with a plurality of dielectrics between opposing electrodes.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the plasma processing apparatus of Patent Document 1, since three dielectric layers are arranged between a pair of electrodes, there are problems that the material cost increases and the manufacturing becomes complicated. In order to reduce the cost, it is conceivable to make the electrodes thinner, but wrinkles are more likely to occur in the electrode portions, making the production extremely difficult. On the contrary, if the electrodes are made thicker, the production becomes easier, but the cost increases. Furthermore, if the electrodes are made thicker, the weight of the electrodes also increases, and the gap between the electrodes changes due to its own weight, making it difficult to generate stable plasma. Also, when thick electrodes are stacked in multiple layers, there is a risk of distortion and cracks in the dielectric due to the thickness of the electrodes. Therefore, it is necessary to install a spacer with a thickness equivalent to that of the electrodes between the electrodes and the dielectric. However, when using a material that is somewhat difficult to process, such as glass, as the material for the spacer, there is a problem that it is very difficult to prepare a material with the same thickness as the electrodes.

[0006] In view of such a background, an object of the present invention is to provide a plasma processing apparatus that can be easily manufactured and has a reduced manufacturing cost.

Means for Solving the Problems

[0007] To solve the above-described problems, the present invention includes at least a plasma generation unit that generates plasma, comprising a dielectric layer and a pair of electrode layers provided on the front side and the back side of the dielectric layer, a power supply unit that applies an alternating voltage to the pair of electrode layers, and a gas flow unit that flows gas through the plasma generation unit for processing the gas with plasma. The plasma generation unit is characterized in that it includes the dielectric layer only in one of the electrode layers and a gas inflow layer through which the gas circulates between the other electrode layer and the dielectric layer.

[0008] According to the present invention, the dielectric is attached only to one of the electrode layers. That is, since the number of necessary parts can be reduced, the material cost can be reduced and it can be easily manufactured.

[0009] Also, it is preferable that the electrode layer includes a through-hole through which the dielectric layer is exposed.

[0010] According to the present invention, since the through holes are formed in the electrode layer, the reaction between the gas and the plasma can occur even on the back surface of the electrode layer and in the vicinity of the cross-sectional portion of the electrode layer in the through holes, and the utilization efficiency of the plasma can be increased.

[0011] Moreover, it is preferable that a mask layer is provided outside the electrode layer.

[0012] According to the present invention, the electrode layer can be protected by the mask layer.

[0013] Further, the present invention includes a plasma generation unit in which two or more basic units each composed of a dielectric layer and an electrode layer provided on the front side or the back side of the dielectric layer are stacked, a power supply unit that applies an alternating voltage to the electrode layer, and a gas flow unit that flows a gas through the plasma generation unit in order to process the gas with plasma. The plasma generation unit includes a gas inflow layer through which the gas circulates between the stacked basic units, and is characterized in that the polarities of the electrode layers adjacent to each other in the stacking direction are different.

[0014] According to the present invention, by simply stacking a plurality of the same basic units, multi-staging can be easily achieved, and the manufacturing cost can be further reduced.

[0015] Moreover, it is preferable that both ends of the dielectric layer of the plurality of basic units are supported by the housing. According to the present invention, the plasma generation unit can be easily manufactured.

Advantages of the Invention

[0016] According to the plasma processing apparatus of the present invention, it can be easily manufactured and the manufacturing cost can be reduced.

Brief Description of the Drawings

[0017]

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Modes for Carrying Out the Invention

[0018] Hereinafter, embodiments of the present invention will be described in detail. However, the embodiments of the present invention are not limited to the embodiments described below. Each embodiment can be applied in appropriate combination. Also, directions such as "up and down" in the description are used for convenience of explanation and do not limit the direction of the present invention.

[0019] The plasma processing apparatus of the present embodiment has a plasma generation unit having a multilayer structure including a dielectric layer, an electrode layer, and a mask layer, a power supply unit capable of applying an alternating voltage between a pair of electrode layers, and a gas flow unit capable of flowing gas into the gas inflow layers outside and inside the plasma generation unit, in order to continuously perform plasma processing on the gas. In dielectric barrier discharge, a dielectric layer is provided between two electrode layers, and by applying an alternating voltage between both electrode layers, plasma can be generated in the dielectric layer sandwiched between both electrode layers. First, the plasma generation unit will be described.

[0020] <Basic Structure of Plasma Generation Unit> As shown in FIGS. 1 and 2, the plasma generation unit 10 includes a dielectric layer 11, an upper electrode 12, a lower electrode 13, an upper mask layer 14, a lower mask layer 15, and a gas inflow layer 18. The electrodes constituting the plasma generation unit 10 may be thin film members, and in that case, they have flexibility.

[0021] As shown in FIGS. 1 to 3, the dielectric layer 11 is a layered member installed between the upper electrode 12 and the lower electrode 13. As the material of the dielectric layer 11, an insulating material with a high breakdown voltage is used so that discharge does not easily occur between the upper electrode 12 and the lower electrode 13. Further, since the material of the dielectric layer 11 is to be exposed to the generated plasma, it is preferably a material having durability against the active substances generated in the plasma. The material of the dielectric layer 11 is preferably a material mainly selected from glass, ceramics, and synthetic resins. "Mainly" means that the component composition is 50% by mass or more (the same applies hereinafter).

[0022] Examples of the glass include soda lime glass (soda glass), borosilicate glass, quartz glass, lead glass, and oxide glass. The synthetic resins include thermoplastic resins and thermosetting resins. Examples of the thermoplastic resins include general-purpose resins such as polyolefin, polystyrene, polyvinyl acetate, polyurethane, polylactic acid, ABS resin, AS resin, acrylic resin, polyvinyl chloride, and polyvinylidene chloride, engineering plastics such as polyamide, polyacetal, polycarbonate, modified polyphenylene ether, polyester, and cyclic polyolefin, polyphenylene sulfide, polysulfone, polyethersulfone, polyarylate, liquid crystal polymer, polyetheretherketone, polyimide, polyamideimide, polyetherimide, fluorine-based resin, unsaturated polyester resin, and polyurethane resin. Among these synthetic resins, silicone-based resins with excellent durability and polyimide-based resins that are stable up to high temperatures are particularly preferred.

[0023] The upper surface of the dielectric layer 11 is in contact with the upper electrode 12, and the lower surface of the dielectric layer 11 faces the lower electrode 13 via the gas inflow layer 18. That is, the dielectric layer 11 and the lower electrode 13 are arranged with a certain interval therebetween, and a gas inflow layer 18 through which gas flows is formed between the dielectric layer 11 and the lower electrode 13.

[0024] The thickness of the dielectric layer 11 is preferably 0.1 mm to 5.0 mm, more preferably 0.1 mm to 3.0 mm, and even more preferably 0.1 to 1.0 mm in order to achieve light weight and miniaturization. The thickness of the gas inflow layer 18 is preferably formed to be thicker than the thickness of the dielectric layer 11 in order to improve the efficiency of plasma processing. The thickness of the gas inflow layer 18 is, for example, about 1.0 mm to 10.0 mm.

[0025] As shown in FIGS. 1 and 2, the upper electrode (electrode layer) 12 is a layered member provided on the upper surface of the dielectric layer 11. The lower electrode (electrode layer) 13 is a layered member facing the lower surface of the dielectric layer 11. Through holes 16 penetrating in the thickness direction are provided in the upper electrode 12 and the lower electrode 13, respectively. In the present embodiment, the through holes 16 are oblong and five are formed, but the shape and the number are not limited. The through holes 16 may be omitted.

[0026] The upper electrode (electrode layer) 12 and the lower electrode (electrode layer) 13 are formed of a conductive material, and a metal plate (including a metal foil), a conductive paint, a conductive polymer, a conductive film, etc. can be used. The thicknesses of the upper electrode 12 and the lower electrode 13 are not particularly limited, but in order to provide a flexible, lightweight, and compact processing apparatus, they are preferably 5 μm to 1.0 mm, more preferably 5 μm to 0.2 mm, and even more preferably 5 μm to 0.1 mm, respectively.

[0027] The dielectric layer 11 and the upper electrode 12 may be laminated without using an adhesive, or may be adhered with an adhesive. The adhesive is preferably a material having durability against active substances generated in the plasma. Examples of the adhesive include polyamide-based, epoxy-based, acrylic-based, urethane-based, phenol-based, urea-based, silicone-based, cyanoacrylate-based, rubber-based, and vinyl acetate-based adhesives. Among these, from the viewpoint of durability, silicone-based adhesives and UV-curable epoxy-based adhesives are preferred, and silicone-based adhesives are more preferred. The thickness of the adhesive is preferably 0.01 to 0.2 mm, and more preferably 0.01 to 0.1 mm.

[0028] The upper mask layer (mask layer) 14 and the lower mask layer (mask layer) 15 are members respectively installed outside the upper electrode 12 and the lower electrode 13 as shown in FIGS. 1 and 2. More specifically, the upper mask layer 14 is installed on the upper surface of the upper electrode 12. The lower mask layer 15 is installed on the lower surface of the lower electrode 13. Through holes 17 are respectively provided in the upper mask layer 14 and the lower mask layer 15. In this embodiment, the through holes 17 are oblong and five are formed, but the shape and the number are not limited. The through holes 17 may be omitted.

[0029] As shown in FIG. 3, the through holes 17 have the same shape as the through holes 16 and are in communication with each other. The dielectric layer 11 is exposed to the outside through the through holes 16 and 17. In other words, the surface of the dielectric layer 11 is exposed to the outside at a plurality of locations where the through holes 16 and 17 are formed. Also, the hole walls (cross-sectional portions) 16a and 17a of the through holes 16 and 17 are respectively exposed to the outside.

[0030] The upper mask layer 14 and the lower mask layer 15 are formed of an insulating material. Also, it is preferable that the hardness of the upper mask layer 14 and the lower mask layer 15 be equal to or less than the hardness of the upper electrode 12 and the lower electrode 13. Since the plasma generation unit 10 is a thin member, there is a problem that it is difficult to handle, but the handleability can be improved by providing the upper mask layer 14 and the lower mask layer 15. On the other hand, considering installation on an object on which the plasma generation unit 10 is to be installed, it is preferable that the upper mask layer 14 and the lower mask layer 15 have a hardness that is easy to install on the object and also improves handleability. The thicknesses of the upper mask layer 14 and the lower mask layer 15 are not particularly limited, but in order to provide a flexible, lightweight, and compact processing apparatus, 5 μm to 1.0 mm are preferable for each, 5 μm to 0.2 mm are more preferable, and 5 μm to 0.1 mm are even more preferable. The thicknesses of the upper mask layer 14 and the lower mask layer 15 may be set as appropriate, but in the present embodiment, they are formed to be larger than the thicknesses of the upper electrode 12 and the lower electrode 13.

[0031] Note that the outer edges of the upper electrode 12 and the lower electrode 13 may be sealed with an insulator (not shown) so that the outer edges are not exposed to the outside world and do not deteriorate over time, and so that there is no discharge via the outer edges other than the through holes 16. Similarly, the outer edges of the upper mask layer 14 and the lower mask layer 15 may be sealed with an insulator (not shown) so that the outer edges are not exposed to the outside world and do not react with substances in the outside world and deteriorate over time, and so that there is no discharge via the outer edges other than the through holes 17.

[0032] When the longitudinal directions of the through holes 16 and 17 are parallel to the gas flow direction, the resistance of the gas flow becomes small and the gas flow becomes smooth. On the other hand, when the longitudinal directions of the through holes 16 and 17 are orthogonal to the gas flow direction, the resistance of the gas flow becomes large, the gas flow is disturbed, and the gas is agitated.

[0033] How to determine the shape, number, and orientation with respect to the gas flow of the through-holes 16 and 17 can be appropriately selected and implemented according to the purpose of the plasma treatment, the effects of the plasma treatment, and the like. Also, the shape of the through-holes may be different between the front side and the back side of the plasma generation unit 10. Further, through-holes may be provided on the front side of the plasma generation unit 10, and no through-holes may be provided on the back side.

[0034] <First Embodiment> Next, a plasma processing apparatus according to the first embodiment of the present invention will be described. The plasma processing apparatus 100 according to the present embodiment includes a plasma generation unit 10, a gas flow unit 20, and a power supply unit (not shown).

[0035] As shown in FIG. 4, the gas flow unit 20 includes a housing 1 and a drive device (not shown) for flowing gas. The housing 1 has a hollow interior and is in the shape of a rectangular parallelepiped. A plurality of plasma generation units 10 are stacked inside the housing 1 with a gap therebetween. Gas flows between the gas inlet layer 18 of each plasma generation unit 10 and adjacent plasma generation units 10, 10. That is, the gas flowing in from one end side is turned into plasma by the plasma generation unit 10, and the plasma gas flows out from the other end side.

[0036] As a method for flowing gas, a known method can be appropriately selected and used. As the drive device for flowing gas, known devices such as a centrifugal blower (e.g., a sirocco fan, a radial fan, a turbo fan), an axial flow blower (e.g., a propeller fan), an inclined flow blower (e.g., a line fan), a cross flow blower, a blower, and a compressor are appropriately used.

[0037] Since the plasma processing apparatus 100 has a temperature change during use, if there is a large difference in the coefficient of thermal expansion between the materials constituting the multilayer structure, there is a concern that problems such as peeling may occur over time. Therefore, the materials and adhesives constituting the dielectric layer 11, the upper mask layer 14, and the lower mask layer 15 laminated with the upper electrode 12 are preferably materials having excellent flexibility that can follow the dimensional changes of the upper electrode 12 and the lower electrode 13. As such a material, a synthetic resin-based material is preferable, and it is more preferable to select and use a more appropriate material from among synthetic resin-based materials.

[0038] In order to manufacture the plasma generation unit 10 of the plasma processing apparatus 100 of the present embodiment, materials such as the dielectric layer 11, the upper electrode 12, the lower electrode 13, the upper mask layer 14, and the lower mask layer 15 are laminated and manufactured. As methods for laminating each layer, there are known methods such as pressure bonding, thermocompression bonding, and application of an adhesive, and they can be appropriately selected and used. As methods for forming the through holes 16 and 17 in the upper electrode 12, the lower electrode 13, the upper mask layer 14, and the lower mask layer 15, there are methods such as a punching method and an etching method, and they can be appropriately selected and used.

[0039] The power supply unit (not shown) applies an alternating voltage between the upper electrode 12 and the lower electrode 13 that face each other with the dielectric layer 11 interposed therebetween. The power supply unit is not particularly limited as long as it can apply an alternating voltage of a predetermined voltage at a predetermined frequency to each electrode of the plasma generation unit 10, and a known power supply device can be used. As the frequency of the alternating voltage, 50 Hz to 30 MHz is preferable, and 50 Hz to 100 kHz is more preferable. Also, as the alternating voltage, 0.1 to 50 kV is preferable, and 0.2 to 10 kV is more preferable.

[0040] <Operational effects> Next, the operational effects of the plasma processing apparatus 100 according to the present embodiment will be described. When an alternating voltage is applied between the upper electrode 12 and the lower electrode 13, plasma is generated in the dielectric layer 11 and the gas inflow layer 18 sandwiched therebetween. Furthermore, plasma is also generated in the vicinity of the hole walls (cross-sectional portions) 16a and 17a of the through holes 16 and 17 on the front side of the plasma generation unit 10.

[0041] While applying an alternating voltage between the electrode layers sandwiching the dielectric layer 11, a gas to be processed by plasma is caused to flow through the plasma generation unit 10. The gas is processed by the plasma generated in the gas inflow layer 18. Also, a part of the gas is processed by the plasma generated in the vicinity of the surface of the dielectric layer 11 exposed to the outside and the vicinity of the hole walls (cross-sectional portions) 16a and 17a in the through holes 16 and 17 along the surface of the plasma generation unit 10.

[0042] Note that the through holes 16 and 17 may be omitted as described above. In this case, when an alternating voltage is applied between the two electrode layers sandwiching the dielectric layer 11, plasma is generated outside the upper mask layer 14 and the lower mask layer 15 beyond the dielectric layer 11. The gas is processed by the plasma.

[0043] Functions exhibited by plasma-treating a gas using the plasma processing apparatus 100 of the present embodiment include sterilization, virus inactivation, deodorization, surface modification, decomposition of chemical substances, and the like. As mechanisms by which these functions are exhibited, active oxygen species such as singlet oxygen, hydrogen peroxide, OH radicals, peroxyl radicals, ozone, etc. are generated in the gas by plasma treatment, and it is considered that they cause the target microorganisms to die or the chemical substances to be decomposed / modified by oxidation reactions and the like. Examples of microorganisms include various bacteria, viruses, and molds.

[0044] In the plasma processing apparatus 100 of the present embodiment, the plasma-treated gas is sterilized, deodorized, etc. by the active oxygen species generated by the plasma, causing the microorganisms present in the gas to die and the chemical substances to be decomposed. Furthermore, in the plasma processing apparatus 100 of the present embodiment, active oxygen species are present (remaining) in the plasma-processed gas. Therefore, by spraying the plasma-processed gas generated by the plasma processing apparatus of the present embodiment onto an object, microorganisms present in the object are killed, chemical substances are decomposed, and sterilization, deodorization, etc. of the object are performed.

[0045] The plasma processing apparatus 100 of the present embodiment can utilize these functions for purposes such as deodorization, malodor removal, sterilization and disinfection, and air purification in many industrial fields such as medical (fiber scopes, endoscopes, various small cameras, etc.), housing, civil engineering, construction, agriculture, fisheries, livestock industry, food processing industry, transportation industry, storage industry, and retail industry.

[0046] According to the plasma processing apparatus 100 according to the present embodiment described above, the dielectric layer 11 is attached only to one electrode layer (the upper electrode 12). That is, since the number of necessary parts can be reduced, the material cost can be reduced and it can be easily manufactured. Thus, even if the gas inflow layer 18 is provided between the electrode layers, the gas flowing through the gas inflow layer 18 can be plasma-processed, so that the plasma processing efficiency can be increased.

[0047] In addition, since the pair of electrode layers (the upper electrode 12 and the lower electrode 13) are provided with through holes 16 and 17 through which the dielectric layer 11 is exposed, the gas flowing outside each plasma generation unit 10 can also be plasma-processed by the plasma generated near the hole walls (cross-sectional portions) 16a and 17a in the through holes 16 and 17.

[0048] In addition, since an upper mask layer 14 is provided outside the upper electrode 12 and a lower mask layer 15 is provided outside the lower electrode 13, the upper electrode 12 and the lower electrode 13 can be protected. Since the plasma generation unit 10 is very thin and flexible, there is a problem that it becomes difficult to handle, for example, during assembly. Further, since the upper electrode 12 and the lower electrode 13 are formed of a conductive material such as a metal having conductivity or a conductive dielectric, they may be eroded by a liquid or a gas. For example, the upper electrode 12 and the lower electrode 13 are oxidized by a gas having a strong oxidizing power and eroded by sulfuric acid, hydrochloric acid, or the like. Further, although the plasma generation unit 10 is installed along the shape of the object to be attached, if only the upper electrode 12 and the lower electrode 13 are provided without the upper mask layer 14 and the lower mask layer 15, if the electrode is a thin metal, there are problems such as wrinkles in the metal constituting the electrode or a gap being formed between the dielectric layer 11. If a gap is formed between the upper electrode 12 and the lower electrode 13 and the dielectric layer 11, it also causes abnormal discharge. In this regard, according to the present embodiment, the upper mask layer 14 and the lower mask layer 15 can protect the upper electrode 12 and the lower electrode 13, and the plasma generation unit 10 becomes easier to handle, improving workability and assemblability. Further, by providing the upper mask layer 14 and the lower mask layer 15, it can be installed on the object to be attached without forming wrinkles or gaps. Further, when a plurality of pairs of electrodes are provided in multiple stages, since the upper mask layer 14 and the lower mask layer 15 also become a part of the dielectric constituting the barrier discharge, even if a gap is formed during installation, abnormal discharge is less likely to occur. Depending on the situation, the same effect can be obtained with either the upper or lower mask layer alone.

[0049] <Second Embodiment> FIG. 5 is a perspective view showing a plasma generation unit according to a second embodiment of the present invention. FIG. 6 is a cross-sectional view showing the plasma generation unit according to the second embodiment. The plasma generation unit 10A according to the second embodiment is different from the first embodiment in that the upper mask layer 14 is not provided. A gas inflow layer 18 is provided between the dielectric layer 11 and the lower electrode 13. The mask layer may be provided only on one side of the plasma generation unit 10A as in the plasma processing apparatus according to the second embodiment.

[0050] <Third Embodiment> FIG. 7 is a perspective view showing a plasma generation unit according to a third embodiment of the present invention. FIG. 8 is a cross-sectional view showing the plasma generation unit according to the third embodiment. FIG. 9 is a cross-sectional view showing a plasma processing apparatus according to the third embodiment. The plasma generation unit 10B according to the third embodiment is different from the first embodiment in that the upper mask layer 14 is not provided and the lower electrode 13 is laminated on the dielectric layer 11 instead of the lower mask layer 15. A gas inflow layer 18 is provided between the dielectric layer 11 on which the upper electrode 12 is laminated and the lower electrode 13. As in the plasma processing apparatus according to the third embodiment, the upper mask layer 14 and the lower mask layer 15 may be omitted. That is, the plasma generation unit 10B is configured by arranging two basic units in which an electrode layer is laminated on one side (upper surface) of the dielectric layer 11, and the upper electrode layer is used as the upper electrode 12 and the lower electrode layer is used as the lower electrode 13. Thereby, miniaturization can be achieved and the number of components can be reduced.

[0051] Also, as in the second embodiment and the third embodiment, by omitting both or one of the upper mask layer 14 and the lower mask layer 15, the upper electrode 12 and the lower electrode 13 can be directly brought into contact with the gas, the plasma and the gas can be brought into contact at the ends of the electrodes, and the plasma gas can be easily taken out. Note that a basic unit in which an electrode layer is arranged on the lower surface of the dielectric layer 11 may be configured.

[0052] <Fourth Embodiment> FIG. 9 is a cross-sectional view showing a plasma processing apparatus according to a fourth embodiment of the present invention. The plasma processing apparatus 100B according to the fourth embodiment includes a plurality of plasma generation units 10B and a gas flow unit 20B. The plasma processing apparatus 100B is obtained by stacking a plurality of the plasma generation units 10B according to the third embodiment inside the housing 1. That is, the plasma processing apparatus 100B includes a basic unit in which the upper electrode 12 is stacked only on one surface (upper surface) of the dielectric layer 11 inside the housing 1, and a basic unit in which the lower electrode 13 is stacked only on one surface (upper surface) of the dielectric layer 11. These basic units are alternately arranged via the gas inlet layer 18. As a result, electrodes with different polarities are alternately stacked, and gas inlet layers 18 are formed between electrode layers adjacent to each other in the height direction. Both ends of the dielectric layer 11 are supported by the wall portion 2 of the housing 1.

[0053] According to the present embodiment, a plurality of plasma generation units 10B can be formed simply by stacking basic units each composed of a dielectric layer and an electrode layer (upper electrode 12 or lower electrode 13) with a space therebetween. Thereby, the plasma processing apparatus 100B can be easily formed. Further, since plasma can be generated in a plurality of gas inlet layers 18, plasma can be efficiently generated in a small space. In addition, since no separate member such as a spacer is required to provide a space between the basic units, the plasma generation unit 10B can be easily made multi-stage, and the manufacturing cost can be reduced and the development period can be shortened.

[0054] Although the embodiments of the present invention have been described above, design changes can be appropriately made without departing from the spirit of the present invention.

Explanation of Reference Numerals

[0055] 1 Housing 10 Plasma generation unit 11 Dielectric layer 12 Upper electrode (electrode layer) 13 Lower electrode (electrode layer) 14 Upper mask layer (mask layer) 15 Lower mask layer (mask layer) 16 Through hole 17 Through-hole 18 Gas inflow layer 20 Gas flow part 100 Plasma processing apparatus

Claims

1. A plasma generation unit that generates plasma, comprising at least a dielectric layer and a pair of electrode layers provided on the front and back sides of the dielectric layer; A power supply unit that applies an alternating voltage to the pair of electrode layers; A gas flow unit that allows a gas to flow through the plasma generation unit to process the gas with plasma. The plasma generation unit includes the dielectric layer only in one of the electrode layers, and a gas inflow layer through which the gas flows between the other electrode layer and the dielectric layer. The plasma processing apparatus is characterized by this.

2. The plasma processing apparatus according to claim 1, wherein the electrode layer includes a through hole through which the dielectric layer is exposed.

3. The plasma processing apparatus according to claim 1, further comprising a mask layer outside the electrode layer.

4. A plasma generation unit in which two or more basic units each composed of a dielectric layer and an electrode layer provided on the front or back side of the dielectric layer are stacked; A power supply unit that applies an alternating voltage to the electrode layer; A gas flow unit that allows a gas to flow through the plasma generation unit to process the gas with plasma. The plasma generation unit includes a gas inflow layer through which the gas flows between the stacked basic units, and is arranged such that the polarities of the electrode layers adjacent to each other in the stacking direction are different. The plasma processing apparatus is characterized by this.

5. The plasma processing apparatus according to claim 4, wherein both ends of the dielectric layer of the plurality of basic units are supported by a housing.

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