Plasma processing device, plasma source, and plasma control method

Abstract

This plasma processing device has a processing chamber, a substrate holding unit, and a plasma source. The processing chamber provides a processing space for a substrate. The substrate holding unit holds the substrate in the processing chamber. The plasma source is configured to supply plasma into the processing chamber and comprises a gas supply unit, piping, an electromagnetic wave generator, an electromagnetic wave supply unit, and a resonator array structure. The gas supply unit supplies a raw material gas. The piping connects the gas supply unit and the processing chamber. The electromagnetic wave generator generates electromagnetic waves for plasma excitation to be supplied into the piping. The electromagnetic wave supply unit supplies the electromagnetic waves into the piping via a dielectric window provided in the piping. The resonator array structure includes a plurality of resonators that can resonate with a magnetic field component of the electromagnetic waves, have a smaller size than the wavelength of the electromagnetic waves, and are disposed in the direction of the same plane surface.

Description

Plasma processing apparatus, plasma source, and plasma control method

[0001] The present disclosure relates to a plasma processing apparatus, a plasma source, and a plasma control method.

[0002] Patent Document 1 discloses an array antenna having a plurality of antennas and a plurality of anticoupling elements arranged at intervals between the plurality of antennas, each of the plurality of anticoupling elements having a first member connected to a ceiling wall that forms a ground plane in a chamber and a second member connected to a tip or a vicinity of the first member. Patent Document 2 discloses a method including providing a substrate in a reaction chamber, depositing a silicon carbide film of a first thickness on the substrate, exposing the silicon carbide film of the first thickness to a remote hydrogen plasma treatment that densifies the silicon carbide film of the first thickness, depositing a silicon carbide film of a second thickness on the silicon carbide film of the first thickness, and exposing the silicon carbide film of the second thickness to a remote hydrogen plasma treatment that densifies the silicon carbide film of the second thickness.

[0003] Japanese Patent Application Publication No. 2021-114360 Special Publication No. 2020-502797

[0004] The present disclosure provides a plasma processing apparatus, a plasma source, and a plasma control method that can generate high-density radicals while suppressing the effects of heat, electromagnetic waves, and ions.

[0005] A plasma processing apparatus according to one aspect of the present disclosure includes a processing chamber, a substrate holder, and a plasma source. The processing chamber is configured to provide a processing space for a substrate. The substrate holder is configured to hold a substrate within the processing chamber. The plasma source is configured to supply plasma into the processing chamber and includes a gas supply unit, piping, an electromagnetic wave generator, an electromagnetic wave supply unit, and a resonator array. The gas supply unit is configured to supply a source gas. The piping is configured to connect the gas supply unit and the processing chamber. The electromagnetic wave generator is configured to generate electromagnetic waves for plasma excitation that are supplied into the piping. The electromagnetic wave supply unit is configured to supply the electromagnetic waves into the piping through a dielectric window provided in the piping. The resonator array is configured to include a plurality of resonators that can resonate with a magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged in a coplanar direction.

[0006] According to the present disclosure, high-density radicals can be generated while suppressing the effects of heat, electromagnetic waves, and ions.

[0007] FIG. 1 is a block diagram showing an example of the configuration of a plasma processing apparatus according to the first embodiment. FIG. 2 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the first embodiment. FIG. 3 is a view showing an example of the configuration of a nozzle according to the first embodiment. FIG. 4 is a cross-sectional view showing an example of piping in a remote plasma source according to the first embodiment. FIG. 5 is a view showing an example of the configuration of a resonator array according to the first embodiment. FIG. 6 is a cross-sectional view showing an example of the A-A cross section of FIG. 5. FIG. 7 is a view showing an example of a plan view and a B-B cross section of a single resonator according to the first embodiment. FIG. 8 is a cross-sectional view showing an example of the C-C cross section of FIG. 7. FIG. 9 is a cross-sectional view showing an example of the D-D cross section of FIG. 7. FIG. 10 is a diagram showing an example of the relationship between the S21 value of a resonator and the frequency of an electromagnetic wave. FIG. 11 is an explanatory diagram showing an example of calculation of the resonant frequency of a resonator according to the first embodiment. FIG. 12 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 1. FIG. 13 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 2. FIG. 14 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 3. FIG. 15 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 4. FIG. 16 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 5. FIG. 17 is a view showing an example of a cross section near the resonator array according to Modification 5. FIG. 18 is a plan view showing an example of the configuration of the resonator array according to Modification 5, as viewed from the upstream direction of the piping. FIG. 19 is a cross-sectional view showing an example of the F-F cross section of FIG. 18. FIG. 20 is a view showing an example of a plan view and a G-G cross section of a single resonator according to Modification 5. FIG. 21 is a cross-sectional view showing an example of the I-I cross section of FIG. 20. FIG. 22 is a cross-sectional view showing an example of the J-J cross section of FIG. 20. FIG. 23 is a view showing an example of the relationship between the position of a ring member and the plasma generation region. FIG. 24 is a view showing an example of the relationship between the position of a ring member and the plasma generation region. FIG. 25 is a view showing an example of the relationship between the position of a shield and the plasma generation region. FIG. 26 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 6. FIG. 27 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the second embodiment. FIG. 28 is a view showing an example of a cross section near the resonator array according to the second embodiment.FIG. 29 is a plan view showing an example of the configuration of a resonator array according to the second embodiment, as seen from the downstream direction of the piping. FIG. 30 is a view showing an example of the configuration of a card-shaped resonator according to the second embodiment. FIG. 31 is a view showing an example of the configuration of a card-shaped resonator according to the second embodiment. FIG. 32 is a view showing another example of the configuration of a card-shaped resonator according to the second embodiment. FIG. 33 is a view showing an example of a cross section of a card-shaped resonator according to the second embodiment. FIG. 34 is a perspective view showing an example of a resonator array according to the second embodiment. FIG. 35 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 7. FIG. 36 is a cross-sectional view showing an example of the K-K cross section of FIG. 35. FIG. 37 is a view showing an example of the configuration of a resonator according to Modification 7. FIG. 38 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 8. FIG. 39 is a view showing an example of a cross section near the resonator array according to Modification 8. FIG. 40 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the third embodiment. FIG. 41 is a perspective view showing an example of the resonator array according to the third embodiment. FIG. 42 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 9. FIG. 43 is a block diagram showing an example of the configuration of a plasma processing apparatus according to the fourth embodiment. FIG. 44 is a diagram showing an example of a plasma diffusion region according to the fourth embodiment. FIG. 45 is a graph showing an example of the distribution of electron density in the plasma diffusion region. FIG. 46 is a graph showing an example of the distribution of electron density in the plasma diffusion region. FIG. 47 is a graph showing an example of the relationship between gas flow rate and electron density. FIG. 48 is a graph showing an example of the relationship between electromagnetic wave power and pipe diameter. FIG. 49 is a graph showing an example of the relationship between electromagnetic wave power density ratio and pipe diameter. FIG. 50 is a graph showing an example of the relationship between the time gas remains in the space of the resonator array structure and the pipe diameter. FIG. 51 is a graph showing an example of the relationship between the travel time from plasma generation to the processing chamber and the pipe diameter.

[0008] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a plasma processing apparatus, a plasma source, and a plasma control method will be described in detail below with reference to the accompanying drawings. However, the disclosed technology is not limited to the following embodiments.

[0009] In a plasma processing apparatus using microwaves for plasma excitation, the power of the microwaves supplied into the processing vessel may be increased to increase the electron density of the plasma. The higher the power of the microwaves supplied into the processing vessel, the higher the electron density of the plasma can be.

[0010] Here, it is known that when the power of the microwaves supplied into the processing vessel is increased and the plasma electron density reaches a certain upper limit, the dielectric constant of the space inside the processing vessel becomes negative. This upper limit of the electron density is appropriately called the "cutoff density." Furthermore, the refractive index is known as an index indicating whether microwaves propagate through space. The refractive index N is expressed by the following formula (1): N = √ε√μ (1) where ε: dielectric constant, μ: magnetic permeability

[0011] Since magnetic permeability is generally positive, when the dielectric constant of the space within the processing vessel becomes negative, the refractive index of the space within the processing vessel becomes a pure imaginary number according to the above formula (1). As a result, microwaves are attenuated and cannot propagate through the space within the processing vessel. When the plasma electron density reaches the cutoff density, microwaves cannot propagate through the space within the processing vessel, and the microwave power is not sufficiently absorbed by the plasma. As a result, there is a problem that the plasma generated within the processing vessel is prevented from densifying over a wide area. While the above description uses microwaves as an example, similar problems also occur in plasma processing apparatuses using electromagnetic waves in the very high frequency (VHF) to ultra high frequency (UHF) bands.

[0012] A stand-alone remote plasma system is known in plasma processing equipment, in which plasma generated in a plasma generation chamber, a separate space connected to the processing chamber by piping, is introduced into the processing chamber. While the stand-alone remote plasma system suppresses the effects of heat, electromagnetic waves, and ions from the plasma generation chamber (plasma source), the long distance between the plasma source and the substrate being processed can cause the plasma to diffuse, resulting in a decrease in plasma density (radical density). Furthermore, when processing gas or plasma is introduced from the plasma generation chamber through piping or a nozzle to the processing chamber, reflection, loss, and recombination of ions and radicals due to collisions can occur, resulting in a decrease in plasma density (radical density). Such low-density radicals result in a slower substrate processing rate. Therefore, it is desirable to generate high-density radicals while suppressing the effects of heat, electromagnetic waves, and ions.

[0013] First Embodiment [Configuration of Plasma Processing Apparatus] FIG. 1 is a block diagram illustrating an example of the configuration of a plasma processing apparatus according to a first embodiment. First, referring to FIG. 1, an outline of plasma generation by a stand-alone remote plasma method in the plasma processing apparatus 1 will be described. As shown in FIG. 1, in the plasma processing apparatus 1, a control device 11 controls an RF (radio frequency) power supply 16 to generate an electromagnetic wave (magnetic field H) using an antenna 18. The electromagnetic wave is then supplied to multiple resonators in a resonator array structure 100 installed in a pipe via a dielectric window 20. In the resonator array structure 100, plasma P is generated within the pipe through resonance between the electromagnetic wave and the multiple resonators. Alternatively, an antenna that generates a rotating magnetic field and a resonator array structure in which multiple resonators are arranged in a direction that resonates with the rotating magnetic field may be used. As the plasma P flows through the pipe toward the nozzle 41, ions recombine, and radicals R flow from the pipe to the processing chamber through the through-hole of the nozzle 41. The through-hole of the nozzle 41 has a diameter that prevents ions from passing from the pipe to the processing chamber. In the plasma processing apparatus 1, the controller 11 side is in an air atmosphere, and the piping and processing chamber side are in a vacuum atmosphere, with the dielectric window 20 as the boundary. In this embodiment, the part from the RF power source 16 to the resonator array structure 100, or from the RF power source 16 to the nozzle 41, is referred to as a remote plasma source.

[0014] FIG. 2 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the first embodiment. The plasma processing apparatus 1 includes an apparatus main body 10 and a control device (an example of a control unit) 11. The plasma processing apparatus 1 shown in FIG. 1 is configured, for example, as a stand-alone remote plasma plasma processing apparatus. The apparatus main body 10 includes a processing vessel 12, a stage 14, an RF (radio frequency) power supply (an example of an electromagnetic wave generator) 16, an antenna 18, piping 36, a gas supply unit 38, and a resonator array 100. The apparatus main body 10 also includes a nozzle 41. The nozzle 41 is provided on an upper portion of the sidewall 12a of the processing vessel 12. A remote plasma source 30, which includes at least the RF power supply 16, the antenna 18, and the resonator array 100, is provided in the piping 36 connecting the gas supply unit 38 and the processing vessel 12. The remote plasma source 30 may also include the gas supply unit 38.

[0015] The processing vessel 12 is formed in a generally cylindrical shape using, for example, anodized aluminum or the like, and provides a generally cylindrical processing space S therein. The processing vessel 12 and the processing space S are an example of a processing chamber. A stage 14 is disposed approximately in the center of the bottom of the processing vessel 12. An exhaust port 12h for exhaust is also provided on the bottom of the processing vessel 12. An exhaust device 56 having a vacuum pump such as a turbomolecular pump and an automatic pressure control valve is connected to the exhaust port 12h via an exhaust pipe 54. The exhaust device 56 can reduce the pressure in the processing space S to a desired vacuum level. The processing vessel 12 is safety-grounded. An opening 12c is formed in a sidewall 12a of the processing vessel 12 for loading and unloading a workpiece WP. The opening 12c is opened and closed by a gate valve GB.

[0016] The workpiece WP is placed on the stage 14. The stage 14 is generally disk-shaped and made of ceramics such as AlN. Inside the stage 14, lifting pins (not shown) for raising and lowering the workpiece WP are provided so as to be protrudable and retractable relative to the upper surface of the stage 14. The stage 14 has an electrostatic chuck on its upper surface, which holds the workpiece WP. A DC power supply 64 is electrically connected to an electrode 14a of the electrostatic chuck. The electrostatic chuck can attract and hold the workpiece WP to its upper surface by electrostatic force generated by a DC voltage applied from the DC power supply 64. The stage 14 is also provided with a temperature control mechanism, such as a coolant flow path and a heater (not shown), for controlling the temperature of the workpiece WP placed on the stage 14.

[0017] The RF power supply 16 is coupled to the antenna 18 and configured to generate a source RF signal (source RF power) for plasma generation via at least one impedance matching circuit. In one embodiment, the source RF signal has a frequency within a range of 10 MHz to 3000 MHz. In one embodiment, the RF power supply 16 may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 18. As described above, the RF power supply 16 is an example of an electromagnetic wave generator and an example of a high-frequency power supply. The antenna 18 is also an example of an electromagnetic wave supply unit.

[0018] The antenna 18 includes one or more coils. In one embodiment, the antenna 18 includes a solenoid coil. That is, the antenna 18 is wound in a loop shape. The opening of the antenna 18 may have any shape, such as a circle, an ellipse, or a polygon (e.g., a square or a triangle). The RF power source 16 is connected to the antenna 18, and a source RF signal is supplied to the antenna 18. The magnetic field H generated by the antenna 18 is directed to penetrate the multiple resonators of the resonator array structure 100 installed on the side wall of the pipe 36. The antenna 18 may also be a planar coil formed in a substantially circular spiral shape (planar spiral shape).

[0019] The pipe 36 connects the gas supply unit 38 and the processing space S of the processing vessel 12. A nozzle 41 is provided at the end of the pipe 36 on the processing space S side. The other end of the pipe 36 is connected to the gas supply unit 38.

[0020] The gas supply unit 38 may include at least one gas source 38 a, at least one valve 38 b, and at least one flow controller 38 c. In one embodiment, the gas supply unit 38 is configured to supply at least one process gas from a corresponding gas source 38 a to the line 36 via a corresponding valve 38 b and flow controller 38 c. Each flow controller 38 c may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 38 may include one or more flow modulation devices to modulate or pulse the flow rate of the at least one process gas.

[0021] 3 is a diagram showing an example of the configuration of a nozzle according to the first embodiment. As shown in FIG. 3, the nozzle 41 has a plurality of through holes 41a and is arranged to cover the end of the pipe 36 in the cross-sectional direction, and processing gas and radicals are supplied to the processing space S through the plurality of through holes 41a. The plurality of through holes 41a preferably have a diameter that prevents ions contained in plasma generated in the internal space 36a of the pipe 36 from passing into the processing space S. In other words, the ions contained in the plasma recombine as they pass through the through holes 41a to form radicals, which are then supplied to the processing space S. The distance between the resonator array 100 and the nozzle 41 can be set as desired.

[0022] 4 is a cross-sectional view showing an example of a pipe in the remote plasma source according to the first embodiment. As shown in FIG. 4, a resonator array 100 is installed on a part of the sidewall of the pipe 36. In this case, the resonator array 100 also serves as the dielectric window 20. Plasma P is generated in the space in contact with the resonator array 100 within the internal space 36a of the pipe 36. In the following description, the cross-sectional direction perpendicular to the longitudinal direction of the pipe 36 is defined as the direction of the cross section in FIG. 4. The resonator array 100 may have a curved surface that matches the curved surface of the pipe 36.

[0023] Referring again to Fig. 2, the resonator array structure 100 is formed by arranging a plurality of resonators that can resonate with the magnetic field component of an electromagnetic wave and have a size smaller than the wavelength of the electromagnetic wave. Note that the resonator array structure is also called a metamaterial, and the resonators are also called meta-atoms.

[0024] By positioning the resonator array structure 100 on the sidewall of the pipe 36, the electromagnetic waves supplied to the internal space 36a of the pipe 36 by the antenna 18 can resonate with the multiple resonators of the resonator array structure 100. Resonance between the electromagnetic waves and the multiple resonators allows the electromagnetic waves to be efficiently supplied to the internal space 36a of the pipe 36 and the magnetic permeability of the processing space to be negative. When the magnetic permeability of the internal space 36a is negative, even if the electron density of the plasma generated in the internal space 36a reaches the cutoff density and the dielectric constant of the internal space 36a is negative, the refractive index becomes a real number according to the above equation (1), allowing the electromagnetic waves to propagate in the internal space 36a. As a result, even if the electron density of the plasma generated in the internal space 36a reaches the cutoff density, the electromagnetic waves can propagate beyond the plasma's skin depth, and the power of the electromagnetic waves is efficiently absorbed by the plasma. As a result, high-density plasma can be generated over a wide area beyond the plasma's skin depth. That is, in the plasma processing apparatus 1 according to this embodiment, the resonator array structure 100 is positioned on the side wall of the pipe 36, thereby making it possible to realize high density plasma over a wide range within the internal space 36a.

[0025] Here, the detailed configuration of the resonator array 100 will be described with reference to Fig. 4 and Fig. 5. Fig. 5 is a diagram showing an example of the configuration of the resonator array according to the first embodiment. Fig. 5 shows the resonator array 100 as viewed from the antenna 18 side of Fig. 2. The resonator array 100 is disposed, for example, so that its longitudinal direction coincides with the longitudinal direction of the pipe 36. In this embodiment, plasma P is generated on the internal space 36a side of the resonator array 100.

[0026] The resonator array 100 is formed by arranging a plurality of resonators 101, each of which can resonate with the magnetic field component of an electromagnetic wave and has a size smaller than the wavelength of the electromagnetic wave, in a lattice pattern. The resonators 101 can also be described as being arranged in a plane parallel to a first surface 106 (described later) on the side of the resonator array 100 where the base area is larger, i.e., in a coplanar direction. Specifically, as shown in FIG. 5 , the resonators 101 are arranged in the same plane in the flat resonator array 100. That is, the resonators 101 are arranged in a plane parallel to the longitudinal surface of the resonator array 100. That is, when viewed from the antenna 18 side, the C-shaped ring members 111, which are shown transparently, are arranged in a lattice pattern so that the C shape is visible. The resonator array 100 is arranged with the resonators 101 arranged in columns whose column direction (horizontal direction) fits within the diameter of the pipe 36 and in rows whose row direction (vertical direction) fits within the diameter of the antenna 18. In the example of FIG. 5, the resonator array structure 100 has a length L1 in the column direction and a length L2 in the row direction.

[0027] In this case, the boundaries between the multiple resonators 101 are shown as boundaries 105, but in reality, the multiple resonators 101 are integrally formed as the resonator array structure 100. The multiple resonators 101 may be formed separately and fitted into a lattice-shaped frame or glued together to form the resonator array structure 100. Each of the multiple resonators 101 forms a series resonant circuit consisting of a capacitor equivalent element and a coil equivalent element. The series resonant circuit is realized by patterning a conductor on a plane. The magnetic field H generated by the antenna 18 is directed to penetrate the C-shaped ring member 111.

[0028] Fig. 6 is a cross-sectional view showing an example of the A-A cross section of Fig. 5. As shown in Fig. 6, in the A-A cross section of the resonator array 100, cross sections of the multiple resonators 101 appear side by side. As in Fig. 5, the boundaries between the multiple resonators 101 are represented by boundaries 105. Here, the first surface 106 of the resonator array 100 is the surface facing the internal space 36a of the pipe 36, and the second surface 107 is the surface facing the antenna 18. In other words, the resonator array 100 shown in Fig. 6 is arranged upside down in Fig. 2.

[0029] FIG. 7 shows an example of a plan view and a cross section B-B of a single resonator according to the first embodiment. FIG. 7 shows a plan view 150 of a single resonator 101 and a cross section 151 of the plan view 150 taken along the B-B line, using one resonator 101 as an example among a plurality of resonators 101 formed integrally. As shown in the plan view 150 and the cross section 151, the single resonator 101 is located within a region surrounded by a boundary 105. That is, in this embodiment, the resonator 101 has two C-shaped ring members 111 each surrounded by a dielectric 112. The dielectric 112 is formed so that a thickness 109a from the first C-shaped ring member 111 to the first surface 106 is thinner than a thickness 109b from the second C-shaped ring member 111 to the second surface 107. This allows the resonator array 100 to selectively generate plasma on the first surface 106 side, which is the inner space 36a side of the pipe 36. That is, the resonator array structure 100 can control the plasma generation surface by adjusting the thickness of the dielectric 112 from each ring member 111 of the resonator 101 to the surface.

[0030] FIG. 8 is a cross-sectional view showing an example of the CC cross section of FIG. 7 . FIG. 9 is a cross-sectional view showing an example of the D-D cross section of FIG. 7 . As shown in cross-sectional view 151 of FIG. 7 , FIGS. 8 and 9 , a single resonator 101 has a structure in which two C-shaped ring members 111 made of conductors are arranged adjacent to each other and facing in opposite directions, with a dielectric 112 disposed between the ring members 111. That is, in the resonator 101, the dielectric 112 is sandwiched between the two C-shaped ring members 111 facing in opposite directions. Capacitor-equivalent elements are formed on the opposing surfaces of the two C-shaped ring members 111 and at both ends of each ring member 111, and coil-equivalent elements are formed along each ring member 111. This allows the resonator 101 to form a series resonant circuit. 7 to 9, the number of C-shaped ring members 111 arranged (hereinafter also referred to as the "number of layers") is 2, but the number of layers of C-shaped ring members 111 may be greater than 2. In this case, the resonator 101 has a structure in which the C-shaped ring members 111 are arranged adjacent to each other in opposite directions, and a dielectric 112 is arranged between the C-shaped ring members 111.

[0031] Referring again to Figure 2, the control device 11 has a processor, a memory, and an input / output interface. The memory stores programs, process recipes, and the like. The processor reads and executes the programs from the memory, thereby controlling each part of the device main body 10 via the input / output interface based on the process recipes stored in the memory.

[0032] For example, when plasma P is generated in the internal space 36a of the pipe 36, the control device 11 controls the electromagnetic waves supplied to the internal space 36a by the antenna 18 so that the multiple resonators 101 resonate with the multiple resonators 101 in a target frequency band that is higher than the resonant frequencies of the multiple resonators 101. Here, the resonant frequency is, for example, a frequency at which the transmission characteristic value (e.g., S21 value) of the multiple resonators 101 becomes a minimum value.

[0033] Here, the resonant frequency of the resonator 101 will be described using FIGS. 10 and 11 . FIG. 10 is a diagram showing an example of the relationship between the S21 value of the resonator and the frequency of the electromagnetic wave. When the frequency of the electromagnetic wave supplied to the internal space 36a of the piping 36 by the antenna 18 matches the resonant frequency Fr (approximately 2.35 GHz) of each resonator 101, the S21 value of each resonator 101 becomes a minimum value, and resonance occurs between the electromagnetic wave and each resonator 101. Note that while FIG. 10 uses microwaves as an example of electromagnetic waves, the same applies to electromagnetic waves in the VHF band. Resonance between the electromagnetic wave and each resonator 101 is maintained even in a predetermined frequency band (e.g., approximately 0.1 GHz) higher than the resonant frequency Fr of each resonator 101. In a predetermined frequency band higher than the resonant frequency Fr of each resonator 101, the electromagnetic wave resonates with each resonator 101, making both the permittivity and the permeability negative in the plasma generation region below the resonator array 100 in the internal space 36a. Therefore, as can be seen from the above equation (1), electromagnetic waves can propagate in the plasma generation region below the resonator array 100 in the internal space 36a. The target frequency band is set to a predetermined frequency band (e.g., approximately 0.1 GHz) higher than the resonant frequency Fr of each resonator 101. The target frequency band is preferably, for example, within 0.05 times the resonant frequency Fr of each resonator 101.

[0034] Fig. 11 is an explanatory diagram showing an example of calculation of the resonant frequency of the resonator according to the first embodiment. As shown in a cross-sectional view 152 in Fig. 11 , the resonator 101 can be considered to have a structure in which a dielectric 112 is sandwiched between two C-shaped ring members 111. In this case, when a magnetic field H is generated that penetrates the C-shaped ring member 111 of the resonator 101, an induced current Ie is generated in the C-shaped ring member 111. Note that the dielectric 112 surrounding the outside of the C-shaped ring member 111 is omitted in Fig. 11 .

[0035] On the other hand, the resonance frequency of the resonator 101 can be calculated from the dimensions in the cross-sectional view 152 and the plan view 153 of Fig. 11. That is, the resonance frequency of the resonator 101 can be calculated from the dimensions of the C-shaped ring member 111 and the thickness of the dielectric 112 sandwiched between the two C-shaped ring members 111, as shown in the following equations (2) to (5). Equation (2) expresses the inductance L of the resonator 101. ＭＡ Equation (3) is a formula for determining the capacitance C of the resonator 101. ＭＡ of the capacitance C corresponding to the upper half or lower half of the plan view 153. ｈａｌｆ Equation (4) is a formula for determining the capacitance C of the resonator 101. ＭＡ Equation (5) is an equation for determining the resonant frequency Fr of the resonator 101.

[0036]

[0037] In formula (2), r represents the radius from the center of the C-shaped ring member 111 to the center of the width of the C, and μ ０ represents the magnetic permeability of a vacuum. ｈａｌｆ represents the capacitance of the resonator 101 that corresponds to the upper half or the lower half of the plan view 153. In addition, in equation (3), ε represents the dielectric constant, ε ０ represents the dielectric constant (electric constant) of a vacuum, S represents the area of ​​the upper half or the lower half of the C-shaped ring member 111, and d represents the distance between the two C-shaped ring members 111. ｏｕｔ represents the outer radius of the C-shaped ring member 111, and r ｉｎ represents the inner radius of the C-shaped ring member 111, and S ｓｐｌｉｔ represents the area of ​​the C-shaped gap of the C-shaped ring member 111. ｓｐｌｉｔ is approximately calculated as the area of ​​a rectangle from the width Wc of the C-shaped ring member 111 shown in the plan view 153 and the gap g of the C. ＰＴＦＥrepresents the distance between the two C-shaped ring members 111 when polytetrafluoroethylene (PTFE) is used as the dielectric 112. As shown in the cross-sectional view 152, it is preferable that the thickness d1 of the two C-shaped ring members 111 be the same.

[0038] In equation (5), the inductance L obtained in equations (2) and (4) is ＭＡ and capacitance C ＭＡ The resonance frequency Fr of the resonator 101 is calculated based on the following equation: The resonance frequency Fr is determined by the outer radius r of the C-shaped ring member 111. ｏｕｔ and the inner radius r ｉｎ The resonance frequency Fr decreases as the thickness d of the dielectric 112 sandwiched between the two C-shaped ring members 111 decreases, and also decreases as the thickness d of the dielectric 112 sandwiched between the two C-shaped ring members 111 decreases. In other words, the resonance frequency Fr decreases as the number of C-shaped ring members 111 stacked increases. ｏｕｔ and the inner radius r ｉｎ By adjusting the thickness d of the dielectric 112, a resonator 101 having a different resonant frequency can be formed. In this embodiment, the C-shaped ring member 111 is described as having a circular ring with a notch in a portion thereof, but this is not limiting. The shape of the ring member is not limited to a circular ring, and may be, for example, an elliptical ring, a triangular ring, a square ring, or a polygonal ring with a notch (corresponding to the gap g). The dielectric constant ε of the dielectric 112 can be changed by changing the material, and is not limited to PTFE, but may be, for example, SiN, SiC, Al2O3, or the like.

[0039] In this way, in the resonator array structure 100 of this embodiment, the multiple resonators 101 are arranged in a direction facing the opening of the antenna 18, so that the magnetic field H passes through the C-shaped ring member 111 of the resonator 101, enabling magnetic field resonance. Therefore, each resonator 101 of the resonator array structure 100 can resonate at the resonance frequency Fr.

[0040] Regarding the propagation of electromagnetic waves through a plurality of resonators, the relationship between the resonant frequency and the refractive index, the permittivity, and the magnetic permeability has been reported by D. R. Smith, D. C. Vier, Th. Koschny, and C. M. Soukoulis et al. in "Electromagnetic parameter retrieval from inhomogeneous metamaterials" in "PHYSICAL REVIEW E 71, 036617 (2005)," for example.

[0041] Next, the generation of high-density radicals in the remote plasma source 30 of the plasma processing apparatus 1 will be described. As shown in FIG. 2 , in the resonator array 100, the magnetic field H penetrates each resonator 101, causing each resonator 101 to resonate, and plasma P is excited on the first surface 106 side of each resonator 101. That is, the first surface 106 side of the resonator array 100 serves as a plasma generation region. Because the processing gas is supplied from the gas supply unit 38 to the processing space S in the processing vessel 12, a flow toward the processing space S occurs in the internal space 36a of the piping 36. Therefore, the processing gas supplied from the gas supply unit 38 to the internal space 36a excites plasma P on the first surface 106 side of each resonator 101, and flows into the processing space S through the through-holes 41a of the nozzle 41. The through-holes 41a of the nozzle 41 function as ion traps. That is, high-density radicals are supplied to the processing space S from the through-holes 41a of the nozzle 41. The workpiece WP is processed by the high-density radicals supplied to the processing space S.

[0042] As described above, in this embodiment, high-density radicals can be generated while suppressing the effects of heat, electromagnetic waves, and ions. Specifically, the long distance between the processing space S where the workpiece WP is placed and the remote plasma source 30 eliminates ions, thereby suppressing charge-up damage caused by ions. Furthermore, the nozzle 41 separates the processing space S from the remote plasma source 30, thereby suppressing thermal damage due to thermal radiation, damage due to light, and the effects of electromagnetic waves. Furthermore, suppressing the effects of heat, electromagnetic waves, and ions improves wettability during surface processing and is suitable for thin-film formation (ALD: atomic layer deposition) and microfabrication (ALE: atomic layer etching). Furthermore, the long distance between the processing space S and the remote plasma source 30 allows the processing gas and radicals to mix evenly, thereby enabling uniform processing of the workpiece WP. Furthermore, the introduction position of the radical-containing activated gas into the processing vessel 12 can be freely selected. Furthermore, the high-density plasma generated by the resonator array structure 100 improves radical generation efficiency, thereby improving the substrate processing speed. Furthermore, since the cleaning gas spreads more widely within the processing vessel 12, deposits adhering to the sidewall 12a of the processing vessel 12 can be cleaned.

[0043] (Variation 1) Next, variations 1 to 6 of the first embodiment will be described using FIGS. 12 to 26. In each variation described below, the same components as those in the apparatus body 10 of the first embodiment are denoted by the same reference numerals, and descriptions of the overlapping components and operations will be omitted. FIG. 12 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Variation 1. The apparatus body 10a of Variation 1 shown in FIG. 12 differs from the apparatus body 10 of the first embodiment in that the pipe 36 is positioned on the upper surface 12b of the processing vessel 12d. In the apparatus body 10a, the pipe 36 is connected to the processing vessel 12d so that the nozzle 41 contacts the center of the upper surface 12b. In the example of FIG. 12, the resonator array 100 is positioned above the processing vessel 12d in accordance with the change in the position of the pipe 36. However, the positional relationship between the resonator array 100 and the pipe 36 remains unchanged, and the resonator array 100 is provided on the side of the pipe 36. The nozzle 41 may also be, for example, a shower plate having a diameter similar to that of the stage 14. In this manner, in the apparatus main body 10a, the upper surface 12b faces the upper surface of the workpiece WP placed on the stage 14, thereby further improving the in-plane uniformity of the workpiece WP.

[0044] 13 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 2. In the apparatus body 10b of Modification 2 shown in Fig. 13, the amount of protrusion of the pipe 36 into the processing vessel 12d is increased compared to the apparatus body 10a of Modification 1, and the nozzle 41 is moved closer to the stage 14. In this way, the apparatus body 10b can increase the density of radicals near the workpiece WP more than the apparatus body 10a of Modification 1.

[0045] (Modification 3) Fig. 14 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 3. The apparatus body 10c of Modification 3 shown in Fig. 14 differs from the apparatus body 10 of the first embodiment in that a dielectric window 20 is provided on the side wall of the pipe 36 in addition to the resonator array 100, thereby forming a remote plasma source 30a. In this way, in the remote plasma source 30a, the resonator array 100 is disposed in the internal space 36a of the pipe 36, so that the width of the resonator array 100 in the cross-sectional direction of the pipe 36 can be made wider than in the first embodiment. In other words, the generation region of the plasma P can be made larger, and the density of radicals supplied to the processing space S can be further improved.

[0046] (Modification 4) FIG. 15 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 4. The apparatus body 10d of Modification 4 shown in FIG. 15 further includes a pipe 37 and a gas supply unit 38d for introducing another process gas into the process chamber 12e, in addition to the components of the apparatus body 10 of the first embodiment. The apparatus body 10d also includes an orifice 42, instead of the nozzle 41, on the process chamber 12e side of the pipe 36. The orifice 42 functions as an ion trap, in place of the nozzle 41, that eliminates ions depending on its length. The orifice 42 is an example of a gas injector. The pipe 37 also includes an orifice similar to the orifice 42, on the process chamber 12e side of the pipe 37. In the apparatus body 10d, the process gas (carrier gas) supplied from the gas supply unit 38 is activated by the plasma P generated by the resonator array structure 100 and supplied to the processing space S from the orifice 42 as activated gas 43a. Furthermore, a processing gas 43b is supplied to the processing space S from the gas supply unit 38d and the piping 37. The activated gas 43a and the processing gas 43b are mixed in the processing space S, and the processing gas 43b is activated by the activated gas 43a to become processing gas 43c, which is supplied to the upper surface of the workpiece WP. In this way, in the apparatus main body 10d, a processing gas different from the plasma-excited processing gas can be supplied to the processing space S and activated.

[0047] (Modification 5) Fig. 16 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 5. The apparatus body 10e of Modification 5 shown in Fig. 16 is configured by integrating the nozzle 41 and the resonator array 100 into a resonator array 200, as compared to the apparatus body 10 of the first embodiment. The resonator array 200 is provided on the processing vessel 12 side of the pipe 36c so as to close the cross section of the pipe 36c. The apparatus body 10e also includes pipes 36b and 36c instead of the pipe 36. Furthermore, a dielectric window 20a is provided at a connection 36d between the pipe 36b and the pipe 36c, and an antenna 18 is disposed so as to supply a magnetic field H to the resonator array 200 via the dielectric window 20a and the internal space 36a. That is, the apparatus body 10e includes a remote plasma source 30b instead of the remote plasma source 30.

[0048] The pipes 36b and 36c are connected at a connection part 36d, for example, at a right angle. The connection part 36d has a dielectric window 20a provided on the wall surface facing the plane of the resonator array structure 200 when viewed from the antenna 18 side. The connection between the pipes 36b and 36c may be made at any angle as long as the magnetic field H from the antenna 18 can be supplied to the resonator array structure 200 through the dielectric window 20a.

[0049] FIG. 17 is a diagram showing an example of a cross section near the resonator array according to Modification 5. As shown in FIG. 17 , the resonator array 200 is, for example, a flat resonator array similar to the resonator array 100 of the first embodiment. The resonator array 200 is provided at the end of the pipe 36c and has a thickness similar to that of the sidewall 12a. Note that in FIG. 17 , the thicknesses are depicted as different to illustrate the cross section E-E. In the resonator array 200, plasma P is generated on the first surface 206 side. The plasma P generated on the first surface 206 side is supplied to the second surface 207 side of the resonator array 200, i.e., the processing space S, through through-holes 208 provided at the centers of the resonators 201 (described later). At this time, ions in the plasma P are recombined through the through-holes 208 and supplied to the processing space S as radicals. Here, the first surface 206 of the resonator array structure 200 is the surface facing the internal space 36a, i.e., the antenna 18 and dielectric window 20a, and the second surface 207 is the surface facing the processing space S.

[0050] Here, the detailed configuration of the resonator array 200 will be described with reference to Fig. 18 . Fig. 18 is a plan view showing an example of the configuration of the resonator array according to Modification 5, as seen from the upstream direction of the pipe. Fig. 18 shows the E-E cross section of the resonator array 200 as seen from the internal space 36a side of Fig. 17 , that is, from the antenna 18 and dielectric window 20a side. The resonator array 200 is, for example, arranged so that its longitudinal direction coincides with (is parallel to) the cross-sectional direction of the pipe 36c. In Modification 5, plasma P is generated on the internal space 36a side of the pipe 36c of the resonator array 200.

[0051] The resonator array 200 is formed by arranging a plurality of resonators 201, each of which can resonate with the magnetic field component of an electromagnetic wave and has a size smaller than the wavelength of the electromagnetic wave, in a lattice pattern. The resonators 201 can also be described as being arranged in a plane parallel to a first surface 206 on the side of the resonator array 200 where the base area is larger, i.e., in a coplanar direction. Specifically, as shown in FIG. 18 , the resonators 201 are arranged in a plane parallel to the cross-sectional direction of the pipe 36c in the flat resonator array 200. In other words, when viewed from the antenna 18 side, the C-shaped ring members 211, which are shown transparently, are arranged in a lattice pattern so that the C shape is visible. The resonator array 200 is arranged, for example, in six rows and six columns, with one corner omitted. In other words, the resonator array 200 has, for example, eight resonators 201 arranged in each quadrant. In this case, the boundaries between the multiple resonators 201 are shown as boundaries 205, but in reality, the multiple resonators 201 are integrally formed as the resonator array structure 200. The multiple resonators 201 may be formed separately and fitted into a lattice-shaped frame or glued together to form the resonator array structure 200. Each of the multiple resonators 201 forms a series resonant circuit consisting of a capacitor equivalent element and a coil equivalent element. The series resonant circuit is realized by patterning a conductor on a plane. The magnetic field H generated by the antenna 18 is directed to penetrate the C-shaped ring member 211.

[0052] 19 is a cross-sectional view showing an example of the F-F cross section of FIG. 18. As shown in FIG. 19, in the F-F cross section of the resonator array 200, cross sections of the multiple resonators 201 appear side by side. Similar to FIG. 18, the boundaries of the multiple resonators 201 are represented by boundaries 205. As described above, the first surface 206 of the resonator array 200 faces the internal space 36a, i.e., faces the antenna 18 and the dielectric window 20a, and the second surface 207 faces the processing space S. Furthermore, a through-hole 208 is provided at the center of each of the multiple resonators 201.

[0053] FIG. 20 shows an example of a plan view and a G-G cross section of a single resonator according to Modification 5. FIG. 20 shows a plan view 250 of a single resonator 201 and a cross section 251 of the C-C cross section of the plan view 250, using one resonator 201 as an example among a plurality of resonators 201 formed integrally. As shown in the plan view 250 and the cross section 251, the single resonator 201 is located within an area surrounded by a boundary 205. That is, in Modification 5, the resonator 201 has two C-shaped ring members 211 each surrounded by a dielectric 212. The dielectric 212 is formed so that a thickness 209a from the first C-shaped ring member 211 to the first surface 206 is thinner than a thickness 209b from the second C-shaped ring member 211 to the second surface 207. As a result, in the resonator array 200, plasma can be selectively generated on the first surface 206 side, which is the inner space 36a side of the pipe 36c, similar to the resonator array 100. That is, in the resonator array 200, the plasma generation surface can be controlled by the thickness of the dielectric 212 from each ring member 211 of the resonator 201 to the surface.

[0054] The through-hole 208 communicates the internal space 36a, which the first surface 206 faces, with the processing space S, which the second surface 207 faces. The through-hole 208 has, for example, a circular cross section. The through-hole 208 has, for example, a diameter of 10 mm or less, which allows ions to recombine and allows radicals and unactivated processing gas to pass from the internal space 36a of the piping 36c to the processing space S. The through-hole 208 more preferably has a diameter of, for example, 2 mm or less. That is, the through-hole 208 has a diameter that does not allow ions to pass from the internal space 36a to the processing space S. That is, radicals and unactivated processing gas contained in plasma generated in the internal space 36a on the first surface 206 side are supplied to the processing space S on the second surface 207 side through the through-hole 208. Ions contained in the plasma recombine to form radicals as they pass through the through-hole 208, and are similarly supplied to the processing space S. High-density radicals are supplied to the processing space S, and the workpiece WP is processed by the radicals.

[0055] FIG. 21 is a cross-sectional view showing an example of the I-I cross section of FIG. 20 . FIG. 22 is a cross-sectional view showing an example of the J-J cross section of FIG. 20 . As shown in cross-sectional view 251 of FIG. 20 , FIGS. 21 and 22 , a single resonator 201 has a structure in which two C-shaped ring members 211 made of conductors are arranged adjacent to each other and facing in opposite directions, with a dielectric 212 disposed between the ring members 211. That is, in the resonator 201, the dielectric 212 is sandwiched between the two C-shaped ring members 211 facing in opposite directions. Furthermore, as described above, a through-hole 208 is provided in the center of the two C-shaped ring members 211. Capacitor-equivalent elements are formed on the opposing surfaces of the two C-shaped ring members 211 and at both ends of each ring member 211, and coil-equivalent elements are formed along each ring member 211. This allows the resonator 201 to form a series resonant circuit. 20 to 22, the number of layers of the C-shaped ring member 211 is two, but the number of layers of the C-shaped ring member 211 may be more than two. In this case, the resonator 201 has a structure in which the C-shaped ring members 211 are arranged adjacent to each other in opposite directions, and a dielectric 212 is arranged between the C-shaped ring members 211. The resonant frequency of the resonator 201 is the same as that of the resonator 101 of the first embodiment, and therefore a description thereof will be omitted.

[0056] Here, the relationship between the position of the ring member and the plasma generation region will be described using the resonator array 200 as an example. Figures 23 and 24 are diagrams showing an example of the relationship between the position of the ring member and the plasma generation region. As shown in Figure 23, in the resonator array 200, the thickness 209a of the dielectric 212 from the first C-shaped ring member 211 to the first surface 206 is thinner than the thickness 209b of the second C-shaped ring member 211 to the second surface 207. The thinner the thickness of the dielectric 212 from the C-shaped ring member 211 to the surface, the more easily it absorbs the power of electromagnetic waves, and plasma is more easily excited on the thinner surface of the dielectric 212 of each resonator 201. For example, in the resonator array 200, by making the thickness 209b at least twice the thickness 209a, plasma is more easily excited on the first surface 206 side, i.e., the thickness 209a side of each resonator 201.

[0057] On the other hand, in the resonator array 200a shown in FIG. 24 , the thickness 209c of the dielectric 212 from the first C-shaped ring member 211 to the first surface 206a is thicker than the thickness 209d of the second C-shaped ring member 211 to the second surface 207a. In this case, by making the thickness 209c at least twice the thickness 209d, plasma is more likely to be excited on the second surface 207a side of each resonator 201A, i.e., the thickness 209d side. If the thicknesses 209c and 209d are substantially the same, plasma is excited on both the first surface 206a and the second surface 207a side. As shown in FIGS. 23 and 24 , the plasma generation surface can be controlled by the position of the C-shaped ring member 211 within the resonator 201. In Modification 5, radicals are supplied to the processing space S, so the resonator array 200 shown in FIG. 23 , in which the first surface 206 of the plasma generation surface is located on the internal space 36a side, is preferred.

[0058] 25 is a diagram showing an example of the relationship between the position of the shield and the plasma generation region. The resonator array 200b shown in FIG. 25 further includes a shield 213 between the second C-shaped ring member 211 of the resonator array 200 and the second surface 207. The shield 213 is a conductive member such as aluminum, and forms a Faraday shield. The shield 213 shields the electromagnetic waves radiated from the antenna 18 from the electric field toward the second surface 207 of the resonator array 200b. Since there is no electric field on the second surface 207 side of the resonator array 200b, no voltage is applied. This suppresses plasma excitation and discharge on the second surface 207 side of the resonator array 200b, i.e., the processing space S side.

[0059] As described above, in Modification 5, by using the flat resonator array 200, the nozzle 41 can be omitted. Furthermore, in Modification 5, the distance between the plasma generation region of the resonator array 200 and the processing space S is shorter than in the first embodiment, so that radicals can be supplied at a higher density. Furthermore, the length of the pipe 36c is not limited as long as it is long enough to supply the magnetic field H from the antenna 18 to the resonator array 200, which improves the degree of freedom in arranging the remote plasma source 30b.

[0060] (Variation 6) Figure 26 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Variation 6. The apparatus body 10f of Variation 6 shown in Figure 26 includes an antenna 18a, a dielectric window 20b, and a pipe 36e instead of the antenna 18, the dielectric window 20a, and the pipes 36b and 36c of the apparatus body 10e of Variation 5. The RF power supply 16, the antenna 18a, the dielectric window 20b, and the resonator array 200 form a remote plasma source 30c. In the apparatus body 10f, the wall surface in the circumferential direction of the cross section of a portion of the pipe 36e is the dielectric window 20b, and the coil of the antenna 18a is wound around the dielectric window 20b. In other words, the dielectric window 20b and the internal space of the pipe 36e are located inside the coil of the antenna 18a. The magnetic field H generated by the antenna 18a passes through the pipe 36e via the dielectric window 20b and is supplied to the resonator array 200. In this way, in the remote plasma source 30c, the antenna 18a is arranged so as to surround the dielectric window 20b of the pipe 36e, which further improves the degree of freedom in the arrangement of the remote plasma source 30c.

[0061] Second Embodiment In the first embodiment, the planar resonator arrays 100 and 200 are used, but a cellular resonator array in which each resonator forms a plurality of cells may also be used, and this embodiment will be described as the second embodiment. Note that the plasma processing apparatus 2 in the second embodiment is similar to that in the first embodiment except for the configuration of the remote plasma source, and therefore a description of the overlapping configuration and operation will be omitted.

[0062] 27 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the second embodiment. As shown in FIG. 27, an apparatus main body 10g according to the second embodiment has a remote plasma source 30d instead of the remote plasma source 30 of the first embodiment. The remote plasma source 30d has an RF power supply 16, an antenna 18, a dielectric window 20c, and a resonator array structure 300 arranged in a pipe 36. Note that the remote plasma source 30d may include a gas supply unit 38, as in the first embodiment.

[0063] The dielectric window 20c is provided on the side wall of the pipe 36, similar to the dielectric window 20 of Modification 3. The size of the dielectric window 20c is not limited as long as it is large enough to supply the magnetic field H to the resonator array structure 300.

[0064] 28 is a diagram illustrating an example of a cross section near the resonator array according to the second embodiment. As shown in FIG. 28 , the resonator array 300 is disposed at a position where the dielectric window 20 c of the pipe 36 is located, with a base plate 320 (described later) parallel to the cross-sectional direction of the pipe 36. In the resonator array 300, a process gas flows from the internal space 36 g toward the internal space 36 f through the through-holes 325 of each cell C provided in the base plate 320. In the cell space of each cell C on the internal space 36 f side, the process gas is plasma-excited to generate plasma P. The plasma P generated in each cell C is supplied to the processing space S via the internal space 36 f and the nozzle 41. Ions in the plasma P are recombined through the through-holes 41 a of the nozzle 41 and supplied to the processing space S as radicals.

[0065] Fig. 29 is a plan view showing an example of the configuration of a resonator array according to the second embodiment as seen from the downstream direction of the pipe. The resonator array 300 shown in Fig. 29 is seen from the downstream direction of the pipe 36, that is, from the nozzle 41 side. That is, the resonator array 300 is arranged so that its first surface is parallel to the cross-sectional direction of the pipe 36. In the following explanation, the structure of the resonator array 300 will be described based on the X-axis direction and the Y-axis direction in Fig. 29.

[0066] As shown in FIG. 29 , the resonator array 300 has card-shaped resonators 301 arranged in a lattice pattern. In the following description, the resonator array 300 may be referred to as a metamaterial 300, and the card-shaped resonators 301 may be referred to as metaatoms 301. In the example of FIG. 29 , the metaatoms 301 are arranged so that cells C surrounded by the metaatoms 301 form five columns in the X-axis direction and five rows in the Y-axis direction (cells C11 to C55). That is, the metaatoms 301 are arranged in six rows and five columns, such as X11, X12, ..., X15, ..., X61, X62, ..., X65, with their longitudinal directions aligned with the X-axis direction. Furthermore, the metaatoms 301 are arranged in five rows and six columns, such as Y11, Y21, ..., Y51, ..., Y16, Y26, ..., Y56, with their longitudinal directions aligned with the Y-axis direction. The lattice opening and depth of cell C are equal to or larger than the outer shape of the C-shaped ring member (e.g., ring member 311B) of meta-atom 301. In other words, meta-atom 301 can also be expressed as being arranged in the direction of a plane perpendicular to the first surface on the side of the base of metamaterial 300 where the area is larger, that is, in the same plane in the X-axis direction and the Y-axis direction.

[0067] Furthermore, a through-hole 325 is formed in the center of the bottom surface of each cell C of the resonator array structure 300. The meta-atoms 301 constituting the peripheral cells C and the meta-atoms 301 near the central cell C may have different resonance frequencies Fr. In the second embodiment, the direction of the magnetic field H is, for example, a direction penetrating each of the meta-atoms 301 arranged in both the X-axis direction and the Y-axis direction constituting each cell C. The direction of the magnetic field H may be either the X-axis direction or the Y-axis direction. In this case, the meta-atoms 301 in which the magnetic field H penetrates the C-shaped ring member 311 of the meta-atoms 301 resonate with the magnetic field H.

[0068] The plurality of resonators 301 includes at least one of resonators 301A and 301B shown in Figures 30 and 31. Each of the plurality of resonators 301 forms a series resonant circuit made up of a capacitor equivalent element and a coil equivalent element. The series resonant circuit is realized by patterning a conductor on a plane.

[0069] Fig. 30 is a diagram showing an example of the configuration of a card-shaped resonator according to the second embodiment. The card-shaped resonator 301A shown in Fig. 30 has a structure in which two C-shaped, concentric, conductor ring members 311A ​​are stacked on one surface of a dielectric plate 312A. Capacitor-equivalent elements are formed on the opposing surfaces of the inner and outer ring members 311A ​​and at both ends of each ring member 311A, and coil-equivalent elements are formed along each ring member 311A. This allows the resonator 301A to form a series resonant circuit.

[0070] FIG. 31 is a diagram illustrating an example of the configuration of a card-shaped resonator according to the second embodiment. The card-shaped resonator 301B shown in FIG. 31 has a structure in which a dielectric plate 312B is disposed between two C-shaped ring members 311B made of a conductor and arranged adjacent to each other in opposite directions. That is, in the resonator 301B, the dielectric plate 312B is sandwiched between the two C-shaped ring members 311B arranged in opposite directions. Capacitor-equivalent elements are formed on the opposing surfaces of the two C-shaped ring members 311B and on both ends of each ring member 311B, and coil-equivalent elements are formed along each ring member 311B. This allows the resonator 301B to form a series resonant circuit. The card-shaped resonator 301B can also be expressed as a card-shaped configuration for each pair of two C-shaped ring members 311B.

[0071] In the resonator 301B shown in FIG. 31 , the “number of layers” of the ring member 311B is two, but the number of layers of the ring member 311B may be greater than two. FIG. 32 is a diagram showing another example of the configuration of a card-shaped resonator according to the second embodiment. The resonator 301B shown in FIG. 32 has N (N≧2) C-shaped ring members 311B made of conductors, and a dielectric plate 312B is disposed between the ring members 311B arranged adjacent to each other in opposite directions. Even with this structure, the resonator 301B can form a series resonant circuit. In the following description, when the resonators 301A and 301B are referred to as the resonator 301, the ring members 311A ​​and 311B may be referred to as the ring members 311, and the dielectric plates 312A and 312B may be referred to as the dielectric 312.

[0072] Furthermore, an insulating coating may be formed on each of the multiple resonators 301. FIG. 33 is a diagram showing an example of a cross section of a card-shaped resonator according to the second embodiment. FIG. 33 shows a side cross section of the resonator 301B shown in FIG. 31. An insulating coating (an example of a dielectric film) 313 is formed on the surface of the resonator 301B. The material of the coating 313 is, for example, ceramic. The thickness of the coating 313 is, for example, in the range of 0.001 mm to 2 mm. By forming the insulating coating 313 on each of the multiple resonators 301, abnormal discharge in each of the multiple resonators 301 can be suppressed.

[0073] Fig. 34 is a perspective view showing an example of a resonator array structure according to the second embodiment. In Fig. 34, ring members are drawn on some of the meta-atoms 301 to make the orientation of the meta-atoms 301 easier to understand, but in reality, the surfaces are covered with a dielectric (insulating film).

[0074] The resonator array structure 300 shown in Fig. 34 has a base plate 320. The base plate 320 is made of a dielectric material such as quartz or ceramics. The base plate 320 is provided with a plurality of grooves 321X in the X-axis direction and a plurality of grooves 321Y in the Y-axis direction, as grooves into which the meta-atoms 301 are fitted. Furthermore, as shown in Fig. 29, a through-hole 325 is provided in the portion of the base plate 320 that will become the bottom surface of each cell.

[0075] A meta atom 301 is fitted into each of the grooves 321X and 321Y. In the following description, the meta atom 301 fitted into the groove 321X may be referred to as meta atom 301X, and the meta atom 301 fitted into the groove 321Y may be referred to as meta atom 301Y. Furthermore, the meta atom 301X is assumed to be wider than the meta atom 301Y, and the ends of the meta atoms 301X are assumed to be in contact with each other. The areas surrounded by the meta atom 301X and the meta atom 301Y are each a cell C. In the example of FIG. 34, five rows and five columns of cells are formed, consisting of cells C11 to C55.

[0076] The side pressing members 323 are fixed to the base plate 320 using screws 324 so as to contact one side of the meta atoms 301Y at arrangements Y11 to Y51 and arrangements Y16 to Y56 shown in Fig. 29 among the outermost meta atoms 301. The side pressing members 323 and screws 324 are an example of pressing members, and are made of ceramics such as alumina, which is a dielectric material.

[0077] The side pressing members 327 are fixed to the base plate 320 using screws 328 so as to contact one side of the meta-atoms 301X at locations X11 to X15 and X61 to X65 shown in FIG. 29 among the outermost meta-atoms 301. A space 327a is formed between the side pressing members 327 and the outermost meta-atom 301X. The space 327a is provided in consideration of plasma generation, but it may be omitted, and the side pressing members 327 may directly contact one side of the meta-atom 301X. The side pressing members 327 and screws 328 are an example of pressing members and are made of ceramics such as alumina, which is a dielectric material.

[0078] The pressing member 329 presses down the meta-atoms 301X and 301Y between the two side pressing members 327. The pressing member 329 is placed between the two side pressing members 327 so as to press down continuously the top of the meta-atom 301Y in the longitudinal direction and also press down the upper end of the meta-atom 301X. In other words, the pressing member 329 is placed parallel to the side pressing member 323. The pressing member 329 is made of ceramics such as alumina, which is a dielectric material.

[0079] Member 330 is disposed above side pressing member 327 in order to secure pressing member 329. An end of pressing member 329 is sandwiched between side pressing member 327 and member 330. Member 330 is fixed to side pressing member 327 with screws 331. Member 330 and screw 331 are an example of a pressing member, and are made of ceramics such as alumina, which is a dielectric material.

[0080] The through holes 325 communicate between an internal space 36f of the piping 36 that faces each cell C and an internal space 36g of the piping 36 that faces the surface of the base plate 320 opposite to the surface on which each cell C is formed, i.e., the underside of the base plate 320. That is, in FIG. 27 , the process gas flowing from the gas supply unit 38 on the upstream side of the piping 36 toward the process space S can pass through the through holes 325. The through holes 325 have, for example, a circular cross section. Note that the resonator array structure 300 may be configured so that the base plate 320 is omitted and the resonators 301 are connected by, for example, welding.

[0081] Next, the generation of high-density radicals in the remote plasma source 30d of the plasma processing apparatus 2 will be described. As shown in FIGS. 27 and 28 , in the resonator array structure 300, the magnetic field H is directed to penetrate the resonators 301 of each cell C, causing the resonators 301 to resonate and exciting plasma P in each cell C. That is, the cell space of each cell C serves as a plasma generation region. Since the processing gas is supplied from the gas supply unit 38 to the processing space S in the internal space 36f of the pipe 36, a flow toward the processing space S occurs. Therefore, the processing gas supplied from the gas supply unit 38 to the internal space 36f through the through holes 325 excites plasma P in each cell C and flows into the processing space S through the through holes 41a of the nozzle 41. The through holes 41a of the nozzle 41 function as ion traps. That is, high-density radicals are supplied from the through holes 41a of the nozzle 41 to the processing space S. The workpiece WP is processed by the high-density radicals supplied to the processing space S.

[0082] In this way, even when the cell-shaped resonator array structure 300 is used, high-density radicals can be generated while suppressing the influence of heat, electromagnetic waves, and ions, as in the first embodiment.

[0083] (Variation 7) Next, variations 7 and 8 of the second embodiment will be described using FIGS. 35 to 39 . In each variation described below, the same components as those in the apparatus bodies 10 and 10g of the first and second embodiments are designated by the same reference numerals, and descriptions of the overlapping components and operations will be omitted. FIG. 35 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Variation 7. The apparatus body 10h of Variation 7 shown in FIG. 35 includes a remote plasma source 30e instead of the remote plasma source 30d of the second embodiment. The remote plasma source 30e includes an RF power supply 16, an electromagnetic wave emission mechanism 18b, a dielectric window 20d, a dielectric 20e, and a resonator array 400. The remote plasma source 30e may include a gas supply unit 38, as in the second embodiment.

[0084] The electromagnetic wave radiation mechanism 18b corresponds to the antenna 18 of the second embodiment and supplies electromagnetic waves, such as microwaves, to the resonator array 400. The electromagnetic wave radiation mechanism 18b has a cylindrical outer conductor and an inner conductor disposed coaxially with the outer conductor within the outer conductor. The electromagnetic wave radiation mechanism 18b includes a coaxial tube having an electromagnetic wave transmission line between the outer conductor and the inner conductor, and an antenna unit that radiates electromagnetic waves to the resonator array 400. A dielectric window 20d that forms part of the wall of the pipe 36 is provided on the underside of the antenna unit, and its underside is in contact with the side of the resonator array 400 on which the cells C are not formed. The resonator array 400 is disposed within the pipe 36. The electromagnetic waves transmitted through the dielectric window 20d generate a rotating magnetic field H1 centered on the inner conductor of the electromagnetic wave radiation mechanism 18b, generating plasma in the cell space within each cell C of the resonator array 400. The rotating magnetic field H1 is caused by the power introduction structure of the electromagnetic wave radiation mechanism 18b, i.e., the electromagnetic wave propagating in the coaxial tube in the TEM mode. That is, on the lower surface of the dielectric window 20d where the resonator array 400 is disposed, the electromagnetic wave supplied from the antenna unit is in the TM01 mode, so the direction of the magnetic field can be considered to be the rotating magnetic field H1.

[0085] The dielectric window 20d is provided on the side wall of the pipe 36, and a portion of it protrudes into the internal space 36h so as to contact the resonator array 400. The dielectric 20e is disposed within the pipe 36 and, together with the dielectric window 20d, sandwiches the resonator array 400, which is located in the central portion of the cross-sectional direction of the pipe 36. In other words, the cross section of the pipe 36 at the position where the dielectric window 20d and other components are disposed is blocked by the dielectric window 20d, the resonator array 400, and the dielectric 20e, in that order from the dielectric window 20d side. The process gas flowing within the pipe 36 can flow toward the nozzle 41 by passing through the through holes 415 of the resonators 401 that constitute each cell C of the resonator array 400.

[0086] 36 is a cross-sectional view showing an example of the K-K cross section in FIG. 35 . As shown in FIG. 36 , a resonator array 400 is a resonator array having a cell shape similar to the resonator array 300 of the second embodiment. The resonator array 400 has through-holes 415 provided in resonators 401 arranged in the Y-axis direction in FIG. 36 , which is substantially perpendicular to the flow direction of the process gas in the piping 36, instead of the through-holes 325 in the base plate 320 of the resonator array 300. That is, the resonator array 400 has cells C generated by resonators 301 arranged in the X-axis direction in FIG. 36 and resonators 401 arranged in the Y-axis direction. In the resonators 301 and 401 of each cell C, the rotating magnetic field H1 penetrates the respective ring members (ring members 311 and 411), causing the resonators 301 and 401 to resonate, thereby exciting plasma in the cell space within each cell C.

[0087] FIG. 37 is a diagram illustrating an example of the configuration of a resonator according to Modification 7. The resonator 401 shown in FIG. 37 has a structure in which a dielectric plate 412 is disposed between two C-shaped conductor ring members 411 that are adjacently arranged in opposite directions. That is, in the resonator 401, the dielectric plate 412 is sandwiched between the two C-shaped ring members 411 that are arranged in opposite directions. Capacitor-equivalent elements are formed on the opposing surfaces of the two C-shaped ring members 411 and on both ends of each ring member 411, and coil-equivalent elements are formed along each ring member 411. This allows the resonator 401 to form a series resonant circuit. The resonator 401 also has a through-hole 415 in its center. By providing the through-hole 415, gas and plasma can flow between adjacent cells C in the X-axis direction of FIG. 36 in a cell C whose two opposing surfaces are formed by the resonators 401. The resonator 401 can also be expressed as being formed by a set of two C-shaped ring members 411. In the following description, the dielectric plate 412 may be referred to as a dielectric 412.

[0088] In this way, in variant example 7, even if the electromagnetic wave radiation mechanism 18b that supplies the rotating magnetic field H1 and the cell-shaped resonator array structure 400 are used, high-density radicals can be generated while suppressing the effects of heat, electromagnetic waves, and ions, as in the second embodiment.

[0089] (Variation 8) FIG. 38 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Variation 8. The apparatus body 10i of Variation 8 shown in FIG. 38 has a resonator array 300 that is inverted 180 degrees from the apparatus body 10g of the second embodiment at the position of the nozzle 41, and supplies electromagnetic waves from the same position as in Variation 5 of the first embodiment. Furthermore, like Variation 5 of the first embodiment, the apparatus body 10i includes pipes 36b and 36c instead of the pipe 36. The resonator array 300 is provided on the processing vessel 12 side of the pipe 36c so as to close the cross section of the pipe 36c. Furthermore, a dielectric window 20a is provided at the connection 36d between the pipe 36b and the pipe 36c, and an electromagnetic wave emission mechanism 18b is disposed so as to supply a rotating magnetic field H1 to the resonator array 300 through the dielectric window 20a. That is, the apparatus body 10i includes a remote plasma source 30f instead of the remote plasma source 30d. The remote plasma source 30f may include a gas supply unit 38, similar to the second embodiment.

[0090] The pipes 36b and 36c are connected at a connection part 36d, for example, at a right angle. The connection part 36d has a dielectric window 20a provided on a wall surface facing the surface on which the cells C of the resonator array 300 are formed, as viewed from the electromagnetic wave radiation mechanism 18b side. The pipes 36b and 36c may be connected at any angle as long as the rotating magnetic field H1 from the electromagnetic wave radiation mechanism 18b can be supplied to the resonator array 300 via the dielectric window 20a.

[0091] As in the fifth modification, the resonator array structure 300 is arranged with the surface on which each cell C is formed facing the upstream side of the piping 36, i.e., the internal space 36a. In this case, the through-holes 325 have a diameter of, for example, 10 mm or less, which allows ions to recombine and allows radicals and unactivated processing gas to pass from the internal space 36a to the processing space S. It is more preferable that the through-holes 325 have a diameter of, for example, 2 mm or less. In other words, the through-holes 325 have a diameter that does not allow ions to pass from the internal space 36a to the processing space S.

[0092] FIG. 39 is a diagram showing an example of a cross section near the resonator array according to Modification 8. As shown in FIG. 39 , the resonator array 300 is provided at the end of the pipe 36 c, and the base plate 320 has the same thickness as the side wall 12 a. Note that in FIG. 39 , the thicknesses are depicted as being slightly different. In the resonator array 300, plasma P is generated in the cell space of each cell C on the internal space 36 a side. The plasma P generated in each cell C passes through each through-hole 325 of each cell C provided in the base plate 320 and is supplied to the side of the resonator array 300 where no cells C are formed, i.e., the processing space S. At this time, ions in the plasma P are recombined through the through-holes 325 and supplied as radicals to the processing space S.

[0093] In this way, by combining the second embodiment with the fifth modification, the nozzle 41 can be omitted. Furthermore, in the eighth modification, the distance between the plasma generation region of the resonator array 300 and the processing space S is shorter than in the second embodiment, so that radicals can be supplied at a higher density. Furthermore, as in the fifth modification, the degree of freedom in the arrangement of the remote plasma source 30f can be improved.

[0094] Third Embodiment In the second embodiment, the cell-shaped resonator arrays 300 and 400 are used, but a resonator array in which the resonators are arranged radially from the center of the resonator array may also be used, and this embodiment will be described as the third embodiment. Note that the plasma processing apparatus 3 in the third embodiment is similar to those in the first and second embodiments except for the configuration of the remote plasma source, and therefore a description of the overlapping configuration and operation will be omitted.

[0095] FIG. 40 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the third embodiment. As shown in FIG. 40 , the apparatus body 10j of the third embodiment includes a remote plasma source 30g instead of the remote plasma source 30d of the second embodiment. The remote plasma source 30g includes an RF power supply 16, an electromagnetic wave emission mechanism 18b, a dielectric window 20a, and a resonator array 500 disposed within the piping 36c. That is, the third embodiment is similar to the eighth embodiment except that a nozzle 41 is provided and the resonator array 500 is disposed within the piping 36c. The remote plasma source 30g may include a gas supply unit 38, as in the second embodiment.

[0096] FIG. 41 is a perspective view showing an example of a resonator array according to the third embodiment. The resonator array 500 shown in FIG. 41 is formed to include a plurality of resonators 501 that can resonate with the magnetic field component of microwaves and that are smaller in size than the wavelength of the microwaves. That is, the plurality of resonators 501 can also be expressed as being arranged in a plane perpendicular to a first surface on the larger side of the base of the resonator array 500, that is, in a coplanar direction that can rotate around the center of the resonator array 500. The plurality of resonators 501 form a plurality of strip-shaped resonators 520, each of which is formed by connecting a plurality of resonators 501 horizontally. In the example shown in FIG. 41 , each strip-shaped resonator 520 has three resonators 501 connected together. The plurality of strip-shaped resonators 520 are arranged so that the short sides of the strips are perpendicular to the plane of the base plate 510 and so as to radiate from the central axis of the electromagnetic wave radiation mechanism 18b. The rotating magnetic field H1 of the electromagnetic waves supplied from the electromagnetic wave radiation mechanism 18b is directed in a direction that penetrates the ring members 511 of the resonators 501 of the plurality of rectangular resonators 520.

[0097] The base plate 510 is provided with a plurality of through holes 525. Similar to the through holes 325 of the resonator array 300, the through holes 525 connect the internal space 36f and the internal space 36g, allowing the process gas to flow from the pipe 36b to the pipe 36c. Details of the resonators 501 are similar to those of the resonator 301B of the second embodiment, and therefore will not be described here. Each of the resonators 501 has a size less than 1 / 10 of the wavelength of the electromagnetic wave. The resonator array 500 is arranged such that the side on which the rectangular resonators 520 are formed faces the downstream side of the pipe 36c, i.e., the processing space S. The resonator array 500 may be configured without the base plate 510, with the rectangular resonators 520 connected by welding, for example.

[0098] Next, the generation of high-density radicals in the remote plasma source 30g of the plasma processing apparatus 3 will be described. As shown in FIG. 40 , in the resonator array structure 500, the rotating magnetic field H1 passes through each resonator 501 of the rectangular resonators 520, causing each resonator 501 to resonate, and plasma P is excited on the surface of each resonator 501. That is, the vicinity of each rectangular resonator 520 forms a plasma generation region. Since the processing gas is supplied from the gas supply unit 38 to the processing space S in the internal space 36f of the pipe 36c, a flow toward the processing space S occurs. Therefore, the processing gas supplied from the gas supply unit 38 to the internal space 36f through the through holes 525 excites plasma P near each rectangular resonator 520 and flows into the processing space S through the through holes 41a of the nozzle 41. The through holes 41a of the nozzle 41 function as ion traps. That is, high-density radicals are supplied to the processing space S from the through holes 41a of the nozzle 41. The workpiece WP is processed by the high-density radicals supplied to the processing space S.

[0099] In this way, even when the radial resonator array structure 500 is used, high-density radicals can be generated while suppressing the influence of heat, electromagnetic waves, and ions, as in the first and second embodiments.

[0100] (Modification 9) Next, Modification 9 of the third embodiment will be described using FIG. 42 . Note that in the following Modification 9, the same components as those in the apparatus bodies 10, 10g, and 10j of the first to third embodiments are designated by the same reference numerals, and redundant descriptions of the components and operations will be omitted. FIG. 42 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 9. The apparatus body 10k of Modification 9 shown in FIG. 42 differs from the apparatus body 10j of the third embodiment in that a resonator array 500 is arranged 180 degrees inverted at the position of the nozzle 41. The resonator array 500 is provided on the processing vessel 12 side of the pipe 36c so as to close the cross section of the pipe 36c. That is, the apparatus body 10k includes a remote plasma source 30h instead of the remote plasma source 30g. Note that the remote plasma source 30h may include a gas supply unit 38, as in the third embodiment.

[0101] As in the eighth modification, the resonator array structure 500 is arranged such that the surface on which each rectangular resonator 520 is formed faces the upstream side of the pipe 36c, i.e., the internal space 36a. In this case, the through-holes 525 have a diameter of, for example, 10 mm or less, so that ions are recombined and radicals and unactivated processing gas pass from the internal space 36a to the processing space S. It is more preferable that the through-holes 525 have a diameter of, for example, 2 mm or less. In other words, the through-holes 525 have a diameter that does not allow ions to pass from the internal space 36a to the processing space S.

[0102] In this way, in Modification 9, the nozzle 41 can be omitted by combining the third embodiment with Modification 8. Furthermore, in Modification 9, the distance between the plasma generation region of the resonator array 500 and the processing space S is shorter than in the third embodiment, so that radicals can be supplied at a higher density. Furthermore, as in Modification 8, the degree of freedom in the arrangement of the remote plasma source 30h can be improved.

[0103] Fourth Embodiment In addition to the first to third embodiments, the plasma density may be measured to control the flow rate of the processing gas and the power of the source RF signal, and this embodiment will be described as the fourth embodiment. Note that the plasma processing apparatus 4 in the fourth embodiment is similar to the first to third embodiments except for the configuration of the insulating probe and the control based on the plasma density, and therefore a description of the overlapping configuration and operation will be omitted.

[0104] FIG. 43 is a block diagram showing an example of the configuration of a plasma processing apparatus according to the fourth embodiment. As shown in FIG. 43 , the apparatus body 101 of the fourth embodiment differs from the apparatus body 10g of the second embodiment in that an insulating probe 600 is provided on the piping 36 side of the nozzle 41. The insulating probe 600 is an example of a measurement unit. The processing vessel 12d and the nozzle 41 are arranged in the same manner as the apparatus body 10a of the first modification. In the fourth embodiment, the remote plasma source 30i includes at least an RF power supply 16, an antenna 18, a resonator array structure 300, and the insulating probe 600. The remote plasma source 30i may include a gas supply unit 38, as in the second embodiment.

[0105] The insulating probe 600 is disposed, for example, on the pipe 36 side of the nozzle 41, and measures the electron density of the plasma generated in the resonator array 300. A distance 610 between the resonator array 300 in the pipe 36 and the insulating probe 600 is the diffusion length of the plasma diffusion region in which the plasma diffuses. The insulating probe 600 outputs the measured plasma density to the control device 11.

[0106] Here, a region 620 including the resonator array 300 and the insulating probe 600 will be described with reference to FIG. 44 . FIG. 44 is a diagram illustrating an example of a plasma diffusion region according to the fourth embodiment. As shown in FIG. 44 , in the region 620, the process gas flows from the internal space 36g of the pipe 36 toward the internal space 36f. The flow rate of the process gas also varies depending on the diameter 36i of the pipe 36. The diameter of the resonator array 300 is approximately equal to the diameter (inner diameter) 36i of the pipe 36. When the process gas passes through the resonator array 300 to which the magnetic field H is applied, plasma P is generated and diffuses within the internal space 36f. FIG. 44 shows the plasma P in a schematic representation. Ions contained in the plasma P recombine as they pass through the through-hole 41a of the nozzle 41. Radicals contained in the plasma P are supplied to the process space S together with the unactivated process gas.

[0107] The insulating probe 600 is disposed, for example, on the internal space 36f side of the nozzle 41, on the processing space S side, or inside the sidewall of the pipe 36 near the nozzle 41, and measures the plasma density near the nozzle 41. Note that, as the plasma density, for example, the electron density is measured.

[0108] When the control device 11 receives the electron density as a measurement result from the insulating probe 600, it controls the remote plasma source 30i to adjust the plasma supply amount based on the input electron density. That is, the control device 11 controls the power of the source RF signal of the RF power supply 16 based on the electron density. The control device 11 also controls the flow rate of the process gas (source gas) by controlling the flow rate controller 38c of the gas supply unit 38 based on the electron density. This allows the plasma processing device 4 to control the amount of high-density radicals generated.

[0109] Next, the change in electron density over distance 610, which is the diffusion length of the plasma diffusion region, will be described using Figures 45 and 46. Figures 45 and 46 are graphs showing an example of the distribution of electron density in the plasma diffusion region. Note that in Figures 45 and 46, region 620 shown in Figure 44 is rotated 90 degrees to the right, with the resonator array structure 300 on the right side of the graph and the nozzle 41 on the left side of the graph.

[0110] 45 shows an example of the distribution of electron density according to the flow rate of the processing gas at a distance 610, where region 601 represents the measurement position of the insulating probe 600. Graphs 631 to 633 respectively show the distribution of electron density when the flow rate of the processing gas is high (graph 631), medium (graph 632), and low (graph 633). Note that the flow rates in graphs 631 to 633 are relative. It can be seen from graphs 631 to 633 that the electron density at the insulating probe 600 near the nozzle 41 increases as the flow rate of the processing gas increases (greater). Note that, due to the Boltzmann relationship, the electron density decreases in locations where the electron temperature is high.

[0111] 46 shows an example of the distribution of electron density at a distance 610 depending on the power (hereinafter, sometimes simply referred to as power) of the source RF signal of the RF power supply 16, where region 601 represents the measurement position of the insulating probe 600. Graphs 634 to 636 show the distribution of electron density when graph 634 is high power, graph 635 is medium power, and graph 636 is low power, respectively. Note that the powers in graphs 634 to 636 are relative. Graphs 634 to 636 show that the electron density in region 637 on the resonator array structure 300 side increases with increasing power. FIGS. 45 and 46 show that the electron density in the insulating probe 600 near the nozzle 41 can be controlled by the flow rate and power of the process gas.

[0112] Next, the relationship between the process gas flow rate, electron density, diameter 36i of the pipe 36, power, residence time, and travel time will be described using FIGS. 47 to 51 . FIG. 47 is a graph showing an example of the relationship between gas flow rate and electron density. Graph 640 in FIG. 47 shows the relationship between the gas flow rate (i.e., the flow rate of the process gas) and electron density. When the gas flow rate is low, diffusion is the dominant factor in the plasma diffusion region (internal space 36f). As shown in graph 640, when the gas flow rate increases to the vicinity of region 641, plasma generation in the resonator array 300 is promoted not only by diffusion but also by gas flow, resulting in an increase in electron density. However, if the gas flow rate increases further, plasma generation in the resonator array 300 cannot keep up, and the electron density decreases. Therefore, it is preferable to control the gas flow rate to the vicinity of region 641.

[0113] Fig. 48 is a graph showing an example of the relationship between the power of the electromagnetic wave and the diameter of the pipe. In the graph of Fig. 48, the vertical axis represents the power [W / mm ３ ], and the horizontal axis represents the diameter 36i [mm] of the pipe 36 (hereinafter referred to as pipe diameter). Graph 650 represents the case where the power of the source RF signal of the RF power supply 16 is 100 W. Graph 651 represents the case where the power is 1000 W. Graph 652 represents the case where the power is 3000 W.

[0114] FIG. 49 is a graph showing an example of the relationship between the power density ratio of electromagnetic waves and the pipe diameter. In graph 653 of FIG. 49, the vertical axis represents the power density ratio [times] and the horizontal axis represents the pipe diameter [mm]. The vertical axis of graph 653 represents the ratio, with a pipe diameter of 300 [mm] being 1. When power is supplied to the resonator array 300, plasma is generated. As shown in graphs 650 to 653, the smaller the pipe diameter and the greater the input power, the greater the power applied per unit volume. In other words, in the resonator array 300, the greater the power supplied to the resonator array 300, the more ionization of the process gas in the resonator array 300 progresses, resulting in a higher plasma density. Furthermore, in the resonator array 300, the power density increases as the pipe diameter decreases. In other words, in each embodiment, high-density plasma can be generated.

[0115] Fig. 50 is a graph showing an example of the relationship between the time that gas stays in the space of the resonator array and the pipe diameter. In the graph of Fig. 50, the vertical axis represents the time [s] that the processing gas stays in the space of the resonator array 300 (metamaterial), and the horizontal axis represents the pipe diameter [mm]. Here, the vertical axis corresponds to the time that power is applied to the processing gas. Graph 654 shows the relationship between the time that the processing gas stays in the space of the resonator array 300 (metamaterial) and the pipe diameter [mm]. －５ m ３ Graph 655 shows the case where the process gas flow rate is 5,000 sccm. Graph 656 shows the case where the process gas flow rate is 10,000 sccm. Graph 657 shows the case where the process gas flow rate is 100,000 sccm. When the process gas flows through the pipe 36, the process gas in the space of the resonator array 300 is replaced. Therefore, as shown in graphs 654 to 657, the smaller the pipe diameter and the higher the process gas flow rate, the shorter the time the process gas stays in the space of the resonator array 300. In other words, the smaller the pipe diameter and the higher the process gas flow rate, the faster the gas replacement in the space of the resonator array 300. In other words, in the resonator array 300, gas replacement occurs immediately after plasma is generated, so high-density plasma is generated one after another.

[0116] FIG. 51 is a graph showing an example of the relationship between the travel time from plasma generation to the processing chamber and the pipe diameter. In the graph of FIG. 51, the vertical axis represents the time [s] from plasma generation in the resonator array 300 until the generated plasma travels to the processing space S (processing chamber), and the horizontal axis represents the pipe diameter [mm]. Here, the vertical axis corresponds to the time it takes for the plasma to travel the distance 610. Graph 660 shows the case where the processing gas flow rate is 2000 sccm. Graph 661 shows the case where the processing gas flow rate is 5000 sccm. Graph 662 shows the case where the processing gas flow rate is 10000 sccm. Graph 663 shows the case where the processing gas flow rate is 20000 sccm. As shown in graphs 660 to 663, the smaller the pipe diameter, the shorter the time it takes for the plasma generated in the resonator array 300 to travel from plasma generation to the processing space S.

[0117] As described above, the fourth embodiment enables optimal control of the process gas flow rate relative to the power. Furthermore, as in the second to fourth embodiments and modifications 5, 6, 8, and 9, the resonator array has a diameter substantially the same as that of the pipes 36 and 36c (e.g., φ100 mm or less), allowing for a miniaturized remote plasma source. Furthermore, because the resonator array can be miniaturized, the power density increases at low power, enabling high-density plasma exceeding the cutoff to be generated. Therefore, high-density radicals can be generated. Furthermore, because the volume of the internal spaces 36a and 36f, which are the plasma generation regions of the pipes 36 and 36c, is small, the time it takes for the plasma to reach the processing space S can be shortened. Therefore, the number of radicals that recombine can be reduced, allowing high-density radicals to be supplied to the processing space S.

[0118] Furthermore, the above-described embodiments and modifications may be combined as appropriate within the scope of the present invention without causing any contradiction in content. For example, the orifice 42 of the fourth modification may be used in place of the nozzle 41 of the second embodiment.

[0119] According to each of the above-described embodiments, the plasma processing apparatuses 1 to 4 each include a processing chamber (processing vessel 12, 12d, 12e), a substrate holder (stage 14), and a plasma source (remote plasma sources 30, 30a to 30h). The processing chamber is configured to provide a processing space S for a substrate (processing object WP). The substrate holder is configured to hold a substrate within the processing chamber. The plasma source is configured to supply plasma into the processing chamber and includes a gas supply unit 38, piping (piping 36, 36c, 36e), an electromagnetic wave generator (RF power supply 16), an electromagnetic wave supply unit (antenna 18, 18a, electromagnetic wave radiation mechanism 18b), and a resonator array structure (resonator array structures 100, 200, 300, 400, 500). The gas supply unit 38 is configured to supply a source gas. The piping is configured to connect the gas supply unit 38 to the processing chamber. The electromagnetic wave generator is configured to generate electromagnetic waves for plasma excitation to be supplied into the pipe. The electromagnetic wave supply unit is configured to supply the electromagnetic waves into the pipe through dielectric windows (dielectric windows 20, 20a to 20d) provided in the pipe. The resonator array structure is configured to include a plurality of resonators (resonators 101, 201, 301, 401, 501) that can resonate with the magnetic field component of the electromagnetic waves, have a size smaller than the wavelength of the electromagnetic waves, and are arranged in the same plane. As a result, high-density radicals can be generated while suppressing the effects of heat, electromagnetic waves, and ions.

[0120] Furthermore, according to each embodiment, the plurality of resonators have a structure in which a C-shaped ring member (ring member 111, 211, 311, 411, 511) made of a conductor is stacked on a dielectric (e.g., dielectric 112, 212, 312, 412), thereby enabling plasma to be excited.

[0121] Furthermore, according to the first embodiment, the multiple resonators 101, 201 each include a set of two or more C-shaped ring members 111, 211, and are formed in a plane parallel to a first surface (first surface 106, 206) on the larger side of the base (dielectric 112, 212) of the resonator array 100, 200. As a result, the multiple resonators 101, 201 can resonate with respect to a magnetic field H supplied from an electromagnetic wave supply unit in a direction penetrating the resonators 101, 201.

[0122] Furthermore, according to the second and third embodiments, the plurality of resonators 301, 401, 501 are each formed in a card shape, with each resonator 301, 401, 501 being a set of two or more C-shaped ring members 311, 411, 511. The plurality of card-shaped resonators 301, 401, 501 are formed in a plane perpendicular to a first surface on the larger side of the base (e.g., base plate 320, 510) of the resonator array structure 300, 400, 500. As a result, the plurality of resonators 301, 401, 501 can resonate with the magnetic field H or rotating magnetic field H1 that is supplied from the electromagnetic wave supply unit and that passes through the resonators 301, 401, 501.

[0123] Furthermore, according to the second and third embodiments, the plurality of resonators 301, 401, 501 each include a set of two or more C-shaped ring members 311, 411, 511, and are formed in a strip shape (e.g., a strip-shaped resonator 520) by connecting the plurality of sets. The strip-shaped resonators are formed in a plane perpendicular to a first surface on the larger side of the base (e.g., base plate 320, 510) of the resonator array structure 300, 400, 500. As a result, the plurality of resonators 301, 401, 501 can resonate with the magnetic field H or rotating magnetic field H1 that is supplied from the electromagnetic wave supply unit and that passes through the resonators 301, 401, 501.

[0124] Furthermore, according to the third embodiment, the multiple resonators 501 are arranged on the first surface side of the resonator array structure 500 such that the plate-like dielectrics of each resonator 501 radiate from the central axis of the electromagnetic wave supply unit as a starting point. As a result, the multiple resonators 501 can resonate with the rotating magnetic field H1 that is supplied from the electromagnetic wave supply unit and passes through the resonators 501.

[0125] Furthermore, according to the first embodiment and modifications 1 to 4 and 7, the resonator array structures 100 and 400 are arranged such that the first surfaces are parallel to the longitudinal direction of the pipe 36. As a result, the electromagnetic wave supply unit can be arranged in a direction along the sidewall of the pipe 36.

[0126] Furthermore, according to the second and third embodiments and the fifth, sixth, and eighth modifications, the resonator arrays 200, 300, and 500 are arranged so that the first surfaces are parallel to the cross-sectional direction of the pipes 36 and 36 c, thereby enabling plasma to be generated over the entire cross-section of the pipes 36 and 36 c.

[0127] Furthermore, according to the first to third embodiments and modifications 1 to 3 and 7, the pipes 36 and 36c are provided with a nozzle 41 at the connection portion with the processing chamber, which makes it possible to supply high-density radicals to the processing chamber while suppressing the effects of heat, electromagnetic waves, and ions.

[0128] Furthermore, according to the seventh modification, the resonator array structure 400 is disposed at the center of the cross section of the pipe 36. The plurality of resonators 401 each have a through-hole 415 in the plate-like dielectric of the resonator 401. As a result, the process gas passing through the through-hole 415 can be plasma-excited.

[0129] According to the second and third embodiments and the fifth, sixth, and eighth modifications, the resonator arrays 200, 300, and 500 include through holes 208, 325, and 525 that open to the first surfaces. As a result, the processing gas can be caused to flow from the gas supply unit 38 to the processing space S.

[0130] According to the fourth embodiment, the plasma source further includes a measuring unit (insulating probe 600) configured to measure plasma density, located in the piping 36 closer to the processing chamber than the resonator array 300. The plasma processing apparatus 4 further includes a control unit (control device 11) configured to control the plasma source to adjust the plasma supply amount based on the measurement results of the measuring unit. As a result, the flow rate of the processing gas relative to the power can be optimally controlled.

[0131] Furthermore, according to the fourth embodiment, the control unit is configured to control the output of the electromagnetic waves from the electromagnetic wave generator based on the measurement results, thereby making it possible to control the plasma density by the power of the source RF signal.

[0132] Furthermore, according to the fourth embodiment, the control unit is configured to control, based on the measurement results, the flow rate of the source gas (processing gas) from the gas supply unit 38. As a result, the plasma density can be controlled by the flow rate of the processing gas.

[0133] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and various omissions, substitutions, and modifications may be made to the above-described embodiments without departing from the spirit and scope of the appended claims.

[0134] Furthermore, in the above-described embodiments, the antenna 18, which is a solenoid coil, or the electromagnetic wave radiation mechanism 18b having a coaxial tube and an antenna portion is used as an antenna for emitting electromagnetic waves, but this is not limiting. In other words, the present invention is not limited to this as long as it can generate a magnetic field in a direction penetrating the ring member 111 of the plurality of resonators 101 of the resonator array structure 100. The antenna for emitting such electromagnetic waves is not limited to the antenna 18 or the electromagnetic wave radiation mechanism 18b, and any antenna or mechanism for emitting electromagnetic waves, such as a monopole antenna, a slot antenna, an inductively coupled coil, a capacitively coupled electrode, or a magnetron, can be used.

[0135] In addition, in each of the above embodiments, plasma is generated by the independent remote plasma source 30 or the like, but this is not limiting. For example, the remote plasma source 30 or the like may be combined with a capacitively coupled or inductively coupled plasma processing apparatus that generates plasma directly in the processing space S of the processing vessel 12.

[0136] The present disclosure may also be configured as follows: (1) A plasma processing apparatus including: a processing chamber configured to provide a processing space for a substrate; a substrate holder configured to hold the substrate within the processing chamber; and a plasma source configured to supply plasma into the processing chamber, the plasma source including: a gas supply unit configured to supply a source gas; a pipe configured to connect the gas supply unit and the processing chamber; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation to be supplied into the pipe; an electromagnetic wave supply unit configured to supply the electromagnetic waves into the pipe through a dielectric window provided in the pipe; and a resonator array structure configured to include a plurality of resonators that can resonate with a magnetic field component of the electromagnetic waves, have a size smaller than the wavelength of the electromagnetic waves, and are arranged in a direction along the same plane. (2) The plasma processing apparatus according to (1), wherein the plurality of resonators have a structure in which C-shaped ring members made of conductors are stacked on a dielectric. (3) The plasma processing apparatus according to (2), wherein each of the plurality of resonators includes a set of two or more C-shaped ring members and is formed in the direction of the plane parallel to a first surface of the resonator array on the side where the base area is larger. (4) The plasma processing apparatus according to (2), wherein each of the plurality of resonators includes a set of two or more C-shaped ring members and is formed in a card shape, and the plurality of card-shaped resonators are formed in the direction of the plane perpendicular to the first surface of the resonator array on the side where the base area is larger. (5) The plasma processing apparatus according to (2), wherein each of the plurality of resonators includes a set of two or more C-shaped ring members and is formed in a strip shape with the plurality of sets connected, and the plurality of strip-shaped resonators are formed in the direction of the plane perpendicular to the first surface of the resonator array on the side where the base area is larger. (6) The plasma processing apparatus according to (4) or (5), wherein the plurality of resonators are arranged on the first surface side of the resonator array structure such that the plate-shaped dielectric of each of the resonators is radially arranged from a central axis of the electromagnetic wave supply unit.(7) The plasma processing apparatus according to any one of (3) to (5), wherein the resonator array is arranged such that the first surface is parallel to the longitudinal direction of the piping. (8) The plasma processing apparatus according to any one of (3) to (6), wherein the resonator array is arranged such that the first surface is parallel to the cross-sectional direction of the piping. (9) The plasma processing apparatus according to (7), wherein the piping includes a nozzle at a connection portion with the processing chamber. (10) The plasma processing apparatus according to (7), wherein the resonator array is arranged at the center of the cross-section of the piping, and wherein the plurality of resonators include a through-hole in the plate-shaped dielectric of each of the resonators. (11) The plasma processing apparatus according to (8) or (9), wherein the resonator array includes a through-hole opening in the first surface. (12) The plasma processing apparatus according to any one of (1) to (11), wherein the plasma source further includes a measurement unit configured to measure the density of the plasma, the measurement unit being located on the processing chamber side of the resonator array structure, and the plasma processing apparatus further includes a control unit configured to control the plasma source to adjust the supply amount of the plasma based on the measurement result of the measurement unit. (13) The plasma processing apparatus according to (12), wherein the control unit is configured to control the output of the electromagnetic waves from the electromagnetic wave generator based on the measurement result. (14) The plasma processing apparatus according to (12) or (13), wherein the control unit is configured to control the flow rate of the raw material gas from the gas supply unit based on the measurement result. (15) A plasma source comprising: a gas supply unit configured to supply a raw material gas; a pipe configured to connect the gas supply unit and a processing chamber configured to provide a processing space for a substrate; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation to be supplied into the pipe; an electromagnetic wave supply unit configured to supply the electromagnetic waves into the pipe through a dielectric window provided in the pipe; and a resonator array structure configured to include a plurality of resonators that can resonate with a magnetic field component of the electromagnetic waves, have a size smaller than the wavelength of the electromagnetic waves, and are arranged in a direction on the same plane.(16) The plasma source according to (15), further comprising: a measurement unit configured to measure plasma density, located in the piping closer to the processing chamber than the resonator array structure; and a control unit configured to control one or more of the electromagnetic wave supply unit and the gas supply unit to adjust the supply amount of the plasma based on the measurement result of the measurement unit. (17) The plasma source according to (16), wherein the control unit is configured to control one or more of the output of the electromagnetic waves from the electromagnetic wave generator and the flow rate of the raw material gas from the gas supply unit based on the measurement result. (18) A plasma control method in a plasma processing apparatus, the plasma processing apparatus comprising: a processing chamber configured to provide a processing space for a substrate; a substrate holder configured to hold the substrate in the processing chamber; and a plasma source configured to supply plasma into the processing chamber, the plasma source comprising: a gas supply unit configured to supply a raw material gas; a pipe configured to connect the gas supply unit and the processing chamber; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation to be supplied into the pipe; an electromagnetic wave supply unit configured to supply the electromagnetic waves into the pipe through a dielectric window provided in the pipe; a resonator array structure configured to include a plurality of resonators that can resonate with a magnetic field component of the electromagnetic waves, have a size smaller than the wavelength of the electromagnetic waves, and are arranged in a direction along the same plane; and a measurement unit in the pipe closer to the processing chamber than the resonator array structure, for measuring the density of the plasma, the plasma control method comprising: a step in which the plasma processing apparatus controls the plasma source to adjust the supply amount of the plasma based on a measurement result of the measurement unit. (19) The plasma control method according to (18), wherein the step of controlling the plasma source controls the output of the electromagnetic waves from the electromagnetic wave generator based on the measurement results. (20) The plasma control method according to (18) or (19), wherein the step of controlling the plasma source controls the flow rate of the raw material gas from the gas supply unit based on the measurement results.

[0137] REFERENCE SIGNS LIST 1 to 4 plasma processing apparatus 11 control device 12, 12d, 12e processing vessel 14 stage 16 RF power supply 18, 18a antenna 18b electromagnetic wave radiation mechanism 20, 20a to 20d dielectric window 30, 30a to 30i remote plasma source 36, 36c, 36e piping 38 gas supply unit 41 nozzle 100, 200, 300, 400, 500 resonator array structure 101, 201, 301, 401, 501 resonator 106, 206 first surface 111, 211, 311, 411, 511 ring member 112, 212, 312, 412 dielectric 208, 325, 415, 525 through hole 320, 510 base plate 520 Rectangular resonator 600 Insulated probe S Processing space WP Processed object

Claims

1. A plasma processing apparatus comprising: a processing chamber configured to provide a processing space for a substrate; a substrate holding unit configured to hold the substrate within the processing chamber; and a plasma source configured to supply plasma into the processing chamber, the plasma source comprising: a gas supply unit configured to supply a raw material gas; a piping configured to connect the gas supply unit and the processing chamber; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation which are supplied into the piping; an electromagnetic wave supply unit configured to supply the electromagnetic waves into the piping through a dielectric window provided in the piping; and a resonator array structure configured to include a plurality of resonators arranged in the same plane direction, the resonators being capable of resonating with a magnetic field component of the electromagnetic waves and having a size smaller than the wavelength of the electromagnetic waves.

2. The plasma processing apparatus according to claim 1, wherein the plurality of resonators have a structure in which a C-shaped ring member made of a conductor is laminated on a dielectric material.

3. The plasma processing apparatus according to claim 2, wherein each of the plurality of resonators comprises a set of two or more C-shaped ring members and is formed in the direction of the plane parallel to a first surface on the side of the resonator array structure having a larger area at its base.

4. The plasma processing apparatus according to claim 2, wherein each of the plurality of resonators is formed in a card shape for each set of two or more of the C-shaped ring members, and the plurality of card-shaped resonators are formed in the direction of the plane perpendicular to a first surface on the side of the resonator array structure having a larger area at its base.

5. The plasma processing apparatus according to claim 2, wherein each of the plurality of resonators comprises a set of two or more of the C-shaped ring members, and the plurality of sets are connected to form a strip shape, and the plurality of resonators having a strip shape are formed in the direction of the plane perpendicular to a first surface on the side of the resonator array structure having a larger area at its base.

6. The plasma processing apparatus according to claim 4 or 5, wherein the plurality of resonators are arranged on the first surface side of the resonator array structure such that the plate-shaped dielectric of each of the resonators radiates from a central axis of the electromagnetic wave supply unit.

7. The plasma processing apparatus according to claim 3, wherein the resonator array structure is arranged in a direction in which the first surface is parallel to a longitudinal direction of the pipe.

8. The plasma processing apparatus according to claim 3, wherein the resonator array structure is arranged in a direction in which the first surface is parallel to a cross-sectional direction of the pipe.

9. The plasma processing apparatus according to claim 7, wherein the piping is provided with a nozzle at a connection portion with the processing chamber.

10. The plasma processing apparatus according to claim 7, wherein the resonator array structure is arranged at the center of a cross section of the pipe, and the plurality of resonators each have a through hole in the plate-shaped dielectric of the resonator.

11. The plasma processing apparatus according to claim 8, wherein the resonator array structure has a through hole that opens to the first surface.

12. The plasma processing apparatus according to claim 1, wherein the plasma source further comprises a measurement unit configured to measure the density of the plasma on the processing chamber side of the resonator array structure in the piping, and the plasma processing apparatus further comprises a control unit configured to control the plasma source to adjust the supply amount of the plasma based on the measurement result in the measurement unit.

13. The plasma processing apparatus according to claim 12, wherein the control unit is configured to control the output of the electromagnetic waves from the electromagnetic wave generator based on the measurement result.

14. The plasma processing apparatus according to claim 12, wherein the control unit is configured to control a flow rate of the source gas in the gas supply unit based on the measurement result.

15. A plasma source comprising: a gas supply unit configured to supply a raw material gas; piping configured to connect the gas supply unit and a processing chamber configured to provide a processing space for a substrate; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation to be supplied into the piping; an electromagnetic wave supply unit configured to supply the electromagnetic waves into the piping through a dielectric window provided in the piping; and a resonator array structure configured to include a plurality of resonators that are resonant with a magnetic field component of the electromagnetic waves, have a size smaller than the wavelength of the electromagnetic waves, and are arranged in the same plane direction.

16. The plasma source according to claim 15, further comprising: a measurement unit configured to measure plasma density on the processing chamber side of the resonator array structure in the piping; and a control unit configured to control one or more of the electromagnetic wave supply unit and the gas supply unit to adjust the supply amount of the plasma based on a measurement result from the measurement unit.

17. The plasma source according to claim 16, wherein the control unit is configured to control one or more of an output of the electromagnetic waves from the electromagnetic wave generator and a flow rate of the raw material gas from the gas supply unit based on the measurement result.

18. A method for controlling plasma in a plasma processing apparatus, the plasma processing apparatus comprising: a processing chamber configured to provide a processing space for a substrate; a substrate holding unit configured to hold the substrate within the processing chamber; and a plasma source configured to supply plasma into the processing chamber, the plasma source comprising: a gas supply unit configured to supply a raw material gas; a piping configured to connect the gas supply unit and the processing chamber; an electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation to be supplied into the piping; an electromagnetic wave supply unit configured to supply the electromagnetic waves into the piping through a dielectric window provided in the piping; a resonator array structure configured to include a plurality of resonators that can resonate with a magnetic field component of the electromagnetic wave, have a size smaller than the wavelength of the electromagnetic wave, and are arranged in the same plane; and a measurement unit in the piping closer to the processing chamber than the resonator array structure, for measuring the density of the plasma, the method comprising: a step of the plasma processing apparatus controlling the plasma source to adjust the supply amount of the plasma based on a measurement result from the measurement unit.

19. The plasma control method according to claim 18, wherein the step of controlling the plasma source includes controlling an output of the electromagnetic wave from the electromagnetic wave generator based on the measurement result.

20. The plasma control method according to claim 18 or 19, wherein the step of controlling the plasma source includes controlling a flow rate of the source gas in the gas supply section based on the measurement result.

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