Substrate processing system and maintenance method

Abstract

To efficiently clean the inside of a vacuum processing chamber without performing opening to the atmosphere.SOLUTION: A substrate processing system includes a substrate processing apparatus, a vacuum transfer chamber, a transfer mechanism, a suction mechanism, and a control section. The substrate processing apparatus includes a vacuum processing chamber in which vacuum processing is executed on a substrate. The vacuum transfer chamber is connected to the vacuum processing chamber and has a transportation port capable of communicating with the vacuum processing chamber. The transfer mechanism is disposed in the vacuum transfer chamber and transports the substrate through the transportation port. The suction mechanism is disposed in the vacuum transfer chamber adjacently to the transfer mechanism and sucks adhesive material to a component in the vacuum processing chamber through the transportation port. The control section controls the transfer mechanism and the suction mechanism.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present disclosure relates to a substrate processing system and a maintenance method.

Background Art

[0002] There is a substrate processing apparatus that places a substrate such as a semiconductor wafer (hereinafter referred to as "wafer") in a vacuum processing chamber in a vacuum state and performs various processes for processing the substrate. In such a substrate processing apparatus, when various processes are performed in the vacuum processing chamber, reaction products, fine particles, etc. accumulate in the vacuum processing chamber as deposits. Therefore, the vacuum processing chamber is periodically opened to the atmosphere and cleaned.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of efficiently cleaning the inside of a vacuum processing chamber without opening it to the atmosphere.

Means for Solving the Problems

[0005] A substrate processing system according to an aspect of the present disclosure includes a substrate processing apparatus, a vacuum transfer chamber, a transfer mechanism, a suction mechanism, and a control unit. The substrate processing apparatus has a vacuum processing chamber in which vacuum processing is performed on a substrate. The vacuum transfer chamber is connected to the vacuum processing chamber and has a transfer port that can communicate with the vacuum processing chamber. The transfer mechanism is disposed in the vacuum transfer chamber and transfers the substrate through the transfer port. The suction mechanism is disposed in the vacuum transfer chamber adjacent to the transfer mechanism and sucks deposits on components in the vacuum processing chamber through the transfer port. The control unit controls the transfer mechanism and the suction mechanism.

Effects of the Invention

[0006] According to the present disclosure, there is an effect that the inside of the vacuum processing chamber can be efficiently cleaned without releasing it to the atmosphere.

Brief Description of the Drawings

[0007]

Figure 1

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Figure 3

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Figure 15

[0008] Hereinafter, embodiments of a substrate processing system and a maintenance method disclosed in the present application will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts will be denoted by the same reference numerals. Also, the processing apparatus disclosed is not limited by the present embodiment.

[0009] By the way, in a substrate processing apparatus, when the vacuum processing chamber is opened to the atmosphere for cleaning, a downtime of the vacuum processing occurs, and there is a risk that productivity will decrease. Therefore, it is expected to clean the inside of the vacuum processing chamber with high efficiency without opening to the atmosphere.

[0010] (Configuration Example of Substrate Processing System According to Embodiment) FIG. 1 is a schematic configuration diagram of a substrate processing system 1 according to an embodiment.

[0011] The substrate processing system 1 includes a plurality of process modules PM (PM1 to PM5), a storage room ST, a vacuum transfer room 11, and a plurality of load lock modules (load lock chambers) LLM (LLM1, LLM2). The substrate processing system 1 also includes an atmospheric pressure transfer room 12, a plurality of load ports LP (LP1 to LP4), and a control unit 10.

[0012] In the example of FIG. 1, five process modules PM1 to PM5, two load lock modules LLM1 and LLM2, and four load ports LP1 to LP4 are shown. However, the numbers of the process modules PM, load lock modules LLM, and load ports LP of the substrate processing system 1 are not limited to those shown. Hereinafter, when there is no particular need to distinguish, the five process modules PM1 to PM5 are collectively referred to as the process module PM. Similarly, the two load lock modules LLM1 and LLM2 are collectively referred to as the load lock module LLM. Similarly, the four load ports LP1 to LP4 are collectively referred to as the load port LP.

[0013] The process module PM performs processing of a semiconductor substrate, that is, a wafer W, in a vacuum atmosphere. The process module PM is an example of a vacuum processing apparatus. The process module PM performs processes such as etching and film formation, for example. The process module PM includes a mounting table that supports the wafer W and an edge ring ER disposed so as to surround the wafer W on the mounting table.

[0014] The process module PM is connected to the vacuum transfer chamber 11 via an openable gate valve G. The gate valve G is in a closed state while the wafer W is being processed within the process module PM. The gate valve G opens when unloading the processed wafer W from the process module PM and when loading the unprocessed wafer W into the process module PM. Also, the gate valve G opens when loading and unloading the edge ring ER from the process module PM. The process module PM is provided with a gas supply unit for supplying a predetermined gas and an exhaust unit capable of evacuation. Details of the process module PM will be described later.

[0015] The storage chamber ST stores the edge ring ER. Inside the storage chamber ST, a plurality of support platforms are provided at predetermined intervals in the vertical direction. Among the plurality of support platforms, the support platform arranged on the upper stage side is a platform for placing the replacement edge ring ER. Note that the replacement edge ring ER is, for example, a new unused edge ring. Also, the replacement edge ring ER may be a used but relatively less consumed edge ring. Among the plurality of support platforms, the support platform arranged on the lower stage side is a platform for placing the used edge ring ER or the edge ring ER to be temporarily stored. The lower stage support platform is empty. Also, the storage chamber ST includes an exhaust mechanism, for example, a vacuum pump and a leak valve, and can switch the atmosphere inside the storage chamber ST between an atmospheric (normal pressure) atmosphere and a vacuum (reduced pressure) atmosphere. The storage chamber ST is configured to be communicable with the vacuum transfer chamber 11 via a transfer port used for loading and unloading the edge ring ER. An openable gate valve G is provided at the transfer port.

[0016] The vacuum transfer chamber 11 has a gas supply section (not shown) and an exhaust section capable of evacuation, and the inside thereof can be maintained in a vacuum atmosphere. The vacuum transfer chamber 11 is connected to the process module PM and the load lock module LLM. The vacuum transfer chamber 11 is configured to be communicable with the process module PM and the load lock module LLM through transfer ports used for loading and unloading the wafer W and the edge ring ER. An openable and closable gate valve G is provided at the transfer port.

[0017] In the vacuum transfer chamber 11, a transfer mechanism 15 for transferring the wafer W and the edge ring ER (hereinafter also referred to as the transfer object) is arranged. The transfer mechanism 15 transfers the wafer W between the process modules PM1 to PM5 and the load lock modules LLM1 and LLM2. For example, when transferring the wafer W from the load lock module LLM to the process module PM and performing vacuum processing on the wafer W in the process module PM, the transfer mechanism 15 takes out the wafer W from the load lock module LLM. Then, the transfer mechanism 15 carries the wafer W taken out from the load lock module LLM into the process module PM from the vacuum transfer chamber 11 through the transfer port. Also, for example, when transferring the wafer W processed in the process module PM to the load lock module LLM, the transfer mechanism 15 takes out the wafer W from the process module PM through the transfer port. Then, the transfer mechanism 15 transfers the wafer W taken out from the process module PM from the vacuum transfer chamber 11 through the transfer port to the load lock module LLM. Further, the transfer mechanism 15 transfers the edge ring ER between the process modules PM1 to PM5 and the storage chamber ST. For example, when transferring the edge ring ER from the process module PM to the storage chamber ST and storing the edge ring in the storage chamber ST, the transfer mechanism 15 takes out the edge ring ER from the process module PM through the transfer port. Then, the transfer mechanism 15 transfers the edge ring ER taken out from the process module PM from the vacuum transfer chamber 11 through the transfer port to the storage chamber ST. Also, for example, when transferring the edge ring ER that has been temporarily taken out from the process module PM and retracted to the support base of the storage chamber ST again and placing it on the mounting table in the process module PM, or when transferring the replacement edge ring ER from the storage chamber ST to the process module PM and placing it on the mounting table in the process module PM, the transfer mechanism 15 takes out the edge ring ER from the storage chamber ST through the transfer port. Then, the transfer mechanism 15 carries the edge ring ER taken out from the storage chamber ST into the process module PM from the vacuum transfer chamber 11 through the transfer port.

[0018] In addition, a suction mechanism 110 is disposed in the vacuum transfer chamber 11. The suction mechanism 110 sucks deposits on the mounting table in the vacuum processing chamber (processing container 30 described later) of the process module PM through the transfer port of the vacuum transfer chamber 11. Details of the suction mechanism 110 will be described later.

[0019] The load lock module LLM is arranged side by side along two sides of the vacuum transfer chamber 11 where the process module PM and the storage chamber ST are not arranged. The load lock module LLM and the vacuum transfer chamber 11 are configured to be internally communicable via a gate valve G. The load lock module LLM has a table for placing the wafer W and a support pin for raising and lowering the wafer W. The configuration of the support pin may be the same as the configuration of the first lifter pin and the second lifter pin in the process module PM. The load lock module LLM includes an exhaust mechanism, for example, a vacuum pump and a leak valve, and the load lock module LLM can switch the atmosphere of the load lock module LLM between an atmospheric (normal pressure) atmosphere and a vacuum (reduced pressure) atmosphere.

[0020] The load lock module LLM is connected to the normal pressure transfer chamber 12 on the side opposite to the side connected to the vacuum transfer chamber 11. The load lock module LLM and the normal pressure transfer chamber 12 are configured to be internally communicable via a gate valve G.

[0021] The normal pressure transfer chamber 12 is maintained in an atmospheric (normal pressure) atmosphere. In the example of FIG. 1, the normal pressure transfer chamber 12 has a substantially rectangular shape in a top view. A plurality of load lock modules LLM are arranged in parallel on one long side of the normal pressure transfer chamber 12. Also, a plurality of load ports LP are arranged in parallel on the other long side of the normal pressure transfer chamber 12. Each load port LP has a carrier in which the wafer W is accommodated. The normal pressure transfer chamber 12 has a transfer mechanism such as an arm, and the transfer mechanism is configured to transfer the wafer W between the load lock module LLM and the load port LP.

[0022] In FIG. 1, the case where the storage chamber ST is configured to be communicable with the vacuum transfer chamber 11 has been described as an example. However, the position of the storage chamber ST is not limited to this, and for example, it may be provided adjacent to the atmospheric pressure transfer chamber 12. In this case, the edge ring ER is carried in and out of the process module PM via the atmospheric pressure transfer chamber 12, the load lock module LLM, and the vacuum transfer chamber 11.

[0023] The substrate processing system 1 configured as described above is overall controlled in operation by the control unit 10. The control unit 10 is, for example, a computer including a program, a memory, a CPU, etc., and controls each part of the substrate processing system 1.

[0024] (Configuration example of process module PM) FIG. 2 is a diagram schematically showing an example of the process module PM included in the substrate processing system 1 according to the embodiment. The process module PM shown in FIG. 2 is a parallel plate type plasma processing apparatus.

[0025] The process module PM is configured to be airtight and has a processing container 30 that is electrically at ground potential. The processing container 30 is an example of a vacuum processing chamber. The processing container 30 is cylindrical and is made of, for example, aluminum having an anodic oxide film formed on its surface. The processing container 30 defines a processing space where plasma is generated. Inside the processing container 30, a mounting table 31 for horizontally supporting the wafer W is accommodated.

[0026] The mounting table 31 has a substantially cylindrical shape with the bottom surface facing in the vertical direction, and the upper surface is the mounting surface 36d. The mounting surface 36d of the mounting table 31 is sized slightly smaller than the wafer W. The mounting table 31 includes a base 33 and an electrostatic chuck 36.

[0027] The base 33 is made of a conductive metal, for example, aluminum or the like. The base 33 functions as a lower electrode. The base 33 is supported by an insulator support base 34, and the support base 34 is installed at the bottom of the processing container 30.

[0028] The electrostatic chuck 36 has a convex substrate placement portion formed at its upper central portion, and the upper surface of this substrate placement portion serves as a placement surface 36d on which the wafer W is placed. The electrostatic chuck 36 is provided at the center of the placement table 31 in a plan view. The electrostatic chuck 36 is an example of a first placement portion on which a substrate is placed. The electrostatic chuck 36 has an electrode 36a and an insulator 36b. The electrode 36a is provided inside the insulator 36b, and a DC power supply 42 is connected to the electrode 36a. The electrostatic chuck 36 is configured to adsorb the wafer W by Coulomb force when a DC voltage is applied from the DC power supply 42 to the electrode 36a. Further, a heater 36c is provided inside the insulator 36b of the electrostatic chuck 36. The heater 36c is supplied with power via a power supply mechanism described later to control the temperature of the wafer W.

[0029] Also, around the placement surface 36d of the placement table 31, an outer peripheral portion (an example of a second placement portion) that is formed by the insulator 36b and is lower than the placement surface 36d is provided, and the upper surface of this outer peripheral portion serves as an ER placement surface 36f on which the edge ring ER is placed. An edge ring ER is disposed on the ER placement surface 36f of the placement table 31 so as to surround the wafer W placed on the placement surface 36d. The edge ring ER is formed of, for example, single crystal silicon. The electrostatic chuck 36 has a pair of electrodes 36g, 36h at a position overlapping with the edge ring ER in a top view. The pair of electrodes 36g, 36h are provided inside the insulator 36b. The electrostatic chuck 36 is configured to adsorb the edge ring ER by Coulomb force when a DC voltage is applied from a DC power supply (not shown) to the pair of electrodes 36g, 36h. In the example of FIG. 1, the case where a pair of electrodes 36g, 36h are provided inside the electrostatic chuck 36 is shown, but a pair of electrodes 36g, 36h may be provided in a ring-shaped dielectric body that is separate from the electrostatic chuck 36. Also, in the example of FIG. 1, the case where the pair of electrodes 36g, 36h constitute bipolar electrodes is shown, but a unipolar electrode may be used instead of the pair of electrodes 36g, 36h. Further, a cylindrical inner wall member 37 made of, for example, quartz is provided so as to surround the periphery of the placement table 31 and the support base 34.

[0030] Further, on the mounting table 31, a first lifter pin (not shown) is provided so as to be able to move up and down from the mounting surface 36d, and a second lifter pin (not shown) is provided so as to be able to move up and down from the upper surface of the outer peripheral portion of the mounting table 31. When the first lifter pin ascends, the wafer W is lifted from the mounting surface 36d. When the second lifter pin ascends, the edge ring ER is lifted from the upper surface of the outer peripheral portion of the mounting table 31.

[0031] A power supply rod 50 is connected to the base 33. The first matching device 41a is connected to the power supply rod 50, and the first RF power supply 40a is connected thereto. Also, the second matching device 41b is connected to the power supply rod 50, and the second RF power supply 40b is connected thereto. The first RF power supply 40a is a power supply for plasma generation, and high-frequency power of a predetermined frequency is configured to be supplied from the first RF power supply 40a to the base 33 of the mounting table 31. Further, the second RF power supply 40b is a power supply for ion drawing (biasing), and high-frequency power of a predetermined frequency lower than that of the first RF power supply 40a is configured to be supplied from the second RF power supply 40b to the base 33 of the mounting table 31.

[0032] Inside the base 33, a flow path 33d is formed. One end of the flow path 33d is connected to a heat transfer fluid inlet pipe 33b, and the other end is connected to a heat transfer fluid outlet pipe 33c. The process module PM is configured to be able to control the temperature of the mounting table 31 by circulating a heat transfer fluid, such as a fluorine-based inert liquid or pure water with high insulation and low viscosity, in the flow path 33d. Note that the process module PM may be configured to separately provide a flow path inside the base 33 corresponding to the regions where the wafer W and the edge ring ER are respectively placed, and to be able to individually control the temperatures of the wafer W and the edge ring ER. Further, the process module PM may be configured to be able to individually control the temperature by supplying a heat transfer gas to the back side of the wafer W or the edge ring ER. For example, a gas supply pipe for supplying a heat transfer gas (back side gas) such as helium gas to the back surface of the wafer W may be provided so as to penetrate the mounting table 31 and the like. The gas supply pipe is connected to a gas supply source. With these configurations, the wafer W adsorbed and held by the electrostatic chuck 36 on the upper surface of the mounting table 31 is controlled to a predetermined temperature.

[0033] On the other hand, above the mounting table 31, a shower head 46 having a function as an upper electrode is provided so as to face the mounting table 31 in parallel. The shower head 46 and the mounting table 31 function as a pair of electrodes (upper electrode and lower electrode).

[0034] The shower head 46 is provided on the top wall portion of the processing container 30. The shower head 46 includes a main body portion 46a and an upper top plate 46b forming an electrode plate, and is supported above the processing container 30 via an insulating member 47. The main body portion 46a is made of a conductive material, such as aluminum having an anodic oxide film formed on its surface, and is configured to be able to detachably support the upper top plate 46b below it.

[0035] Inside the main body 46a, a gas diffusion chamber 46c is provided. A large number of gas flow holes 46d are formed at the bottom of the main body 46a so as to be located below the gas diffusion chamber 46c. Further, a gas introduction hole 46e is provided in the upper top plate 46b so as to penetrate the upper top plate 46b in the thickness direction and overlap with the above-described gas flow holes 46d. With such a configuration, the processing gas supplied to the gas diffusion chamber 46c is dispersed and supplied into the processing container 30 in a shower shape through the gas flow holes 46d and the gas introduction holes 46e.

[0036] A gas introduction port 46g for introducing the processing gas into the gas diffusion chamber 46c is formed in the main body 46a. One end of a gas supply pipe 45a is connected to this gas introduction port 46g. The other end of this gas supply pipe 45a is connected to a processing gas supply source 45 that supplies the processing gas. A mass flow controller (MFC) 45b and an on-off valve V2 are provided in the gas supply pipe 45a in order from the upstream side. Then, the processing gas for plasma etching is supplied from the processing gas supply source 45 to the gas diffusion chamber 46c through the gas supply pipe 45a, and is dispersed and supplied into the processing container 30 in a shower shape from this gas diffusion chamber 46c through the gas flow holes 46d and the gas introduction holes 46e.

[0037] A variable DC power supply 48b is electrically connected to the shower head 46 as the above-described upper electrode through a low-pass filter (LPF) 48a. This variable DC power supply 48b is configured to be able to turn on and off the power supply by an on-off switch 48c. The current and voltage of the variable DC power supply 48b and the on-off of the on-off switch 48c are controlled by a control unit 10 described later. As will be described later, when high-frequency waves are applied from the first RF power supply 40a and the second RF power supply 40b to the mounting table 31 to generate plasma in the processing space, the on-off switch 48c is turned on by the control unit 10 as necessary, and a predetermined DC voltage is applied to the shower head 46 as the upper electrode.

[0038] Also, a cylindrical ground conductor 30a is provided so as to extend upward from the side wall of the processing container 30 above the height position of the shower head 46. This cylindrical ground conductor 30a has a top wall at its upper part.

[0039] An exhaust port 81 is formed at the bottom of the processing container 30, and an exhaust device 83 is connected to this exhaust port 81 via an exhaust pipe 82. The exhaust device 83 has a vacuum pump, and is configured such that the inside of the processing container 30 can be decompressed to a predetermined degree of vacuum by operating this vacuum pump.

[0040] On the other hand, a gate 84 used for loading and unloading the wafer W is provided on the side wall inside the processing container 30. A gate valve G for opening and closing the gate 84 is provided on the gate 84. As shown in FIG. 1, the gate 84 is connected to the transfer port of the vacuum transfer chamber 11 via the gate valve G while maintaining airtightness, and the wafer W can be loaded and unloaded from the vacuum transfer chamber 11 while maintaining a vacuum atmosphere.

[0041] A deposition shield 86 is provided along the inner wall surface on the inner side of the side part of the processing container 30. The deposition shield 86 prevents reaction products (deposits) generated by an etching process using plasma in the processing container 30 from adhering. The deposition shield 86 is configured to be detachable.

[0042] The process module PM having the above configuration is connected to the control unit 10 of the substrate processing system 1. The control unit 10 controls each part of the process module PM.

[0043] Incidentally, in the process module PM, when various processes are carried out in the processing container 30 which is a vacuum processing chamber, reaction products, fine particles, etc. accumulate and adhere to the inside of the processing container 30 as deposits, so the inside of the processing container 30 is regularly cleaned. In the process module PM, when the processing container 30 is opened to the atmosphere for cleaning, in addition to the time for opening to the atmosphere and the cleaning time, after the evacuation of the processing container 30 is started, the evacuation time for reducing the residual moisture in the processing container 30, the temperature adjustment time in the processing container 30, etc., a considerable amount of time (downtime) is required until the etching process on the wafer W is restarted. As a result, the productivity of the process module PM may decrease. For this reason, from the viewpoint of reducing downtime, it is preferable to clean the inside of the processing container 30 without opening it to the atmosphere.

[0044] Therefore, as shown in FIGS. 1 and 2, the substrate processing system 1 according to the embodiment arranges a suction mechanism 110 for cleaning the inside of the processing container 30 adjacent to a transfer mechanism 15 that transfers the wafer W to the processing container 30 in a vacuum transfer chamber 11 connected to the processing container 30 in the process module PM. The suction mechanism 110 sucks deposits of objects inside the processing container 30 through a transfer port used for loading and unloading the wafer W by the transfer mechanism 15. Thereby, since the deposits of objects inside the processing container 30 can be sucked from the transfer system side that transfers the wafer W to the processing container 30, the inside of the processing container 30 can be cleaned efficiently without opening it to the atmosphere.

[0045] (Configuration example of the suction mechanism 110) Next, with reference to FIGS. 1 and 3, the details of the configuration of the suction mechanism 110 will be described. FIG. 3 is a longitudinal sectional view showing an example of the internal configuration of the vacuum transfer chamber 11 according to the embodiment. In FIG. 3, a cross section near the connection part (coupling part) between the vacuum transfer chamber 11 and the process module PM is shown. In each of the following figures, the process module PM is shown in a simplified manner. Also, hereinafter, the configuration of the suction mechanism 110 will be appropriately described along the flow of cleaning the mounting table 31 as an object inside the processing container 30.

[0046] The vacuum transfer chamber 11 has a transfer port 11a and is configured to be communicable with the process module PM (processing vessel 30) via the transfer port 11a. The transfer port 11a communicates with the processing vessel 30 when the gate valve G provided at the gate 84 of the process module PM is open. In the example of FIG. 3, the gate valve G of the process module PM is closed.

[0047] A transfer mechanism 15 is disposed in the vacuum transfer chamber 11. The transfer mechanism 15 includes an arm portion 15a having a plurality of arm elements rotatably connected by joints, and a fork portion 15b provided at the tip of the arm portion 15a. The arm portion 15a is supported by a support portion 15c. The support portion 15c is configured to be movable horizontally and vertically along a rail 15d (see FIG. 1, omitted in FIG. 3) disposed on the bottom surface of the vacuum transfer chamber 11. The fork portion 15b holds the object to be transferred, that is, the wafer W and the edge ring ER. The transfer mechanism 15 can extend and contract the arm portion 15a horizontally by bending the joints. The transfer mechanism 15 can move the fork portion 15b at the tip of the arm portion 15a vertically by raising and lowering the arm portion 15a by the support portion 15c. The transfer mechanism 15 holds the object to be transferred with the fork portion 15b, and when the gate valve G of the process module PM is open, extends and contracts the arm portion 15a to transfer (carry in) the object to be transferred from the vacuum transfer chamber 11 to the processing vessel 30 through the transfer port 11a. Further, the transfer mechanism 15 extends and contracts the arm portion 15a to transfer (carry out) the object to be transferred from the processing vessel 30 to the vacuum transfer chamber 11 through the transfer port 11a. The operation of the transfer mechanism 15 is comprehensively controlled by the control unit 10.

[0048] The vacuum transfer chamber 11 also has a transfer port 11b and is configured to be communicable with the load lock module LLM via the transfer port 11b. The transfer port 11b communicates with the load lock module LLM when the gate valve G of the load lock module LLM is open. In the example of FIG. 3, the gate valve G of the load lock module LLM is closed.

[0049] When the gate valve G of the load lock module LLM opens, the transfer mechanism 15 extends and retracts the arm portion 15a to transfer (unload) an object from the load lock module LLM to the vacuum transfer chamber 11 through the transfer port 11b. Further, the transfer mechanism 15 extends and retracts the arm portion 15a to transfer (load) an object from the vacuum transfer chamber 11 to the load lock module LLM through the transfer port 11b.

[0050] Inside the vacuum transfer chamber 11, a suction mechanism 110 for sucking the deposits on the mounting table 31 in the processing container 30 is arranged adjacent to the transfer mechanism 15. In the example of FIG. 1, two suction mechanisms 110 are arranged. In the example of FIG. 3, the illustration of one of the two suction mechanisms 110 is omitted. Note that the number of the suction mechanisms 110 is not limited to two, and may be two or more, or may be one. Further, the suction mechanism 110 may be provided on a rail (not shown) arranged on the bottom surface of the vacuum transfer chamber 11 and configured to be movable on such a rail.

[0051] FIG. 4 is a diagram showing details of the suction mechanism 110 according to the embodiment. The suction mechanism 110 includes a robot arm 111, and a suction port 112, a supply port 113, an irradiation unit 114, and an imaging unit 115 provided at the tip of the robot arm 111.

[0052] The robot arm 111 includes an arm portion 121 in which a plurality of arm elements are rotatably connected by joints, a support portion 122 that supports the arm portion 121, and a head portion 123 provided at the tip of the arm portion 121. The support portion 122 is configured to be movable in the horizontal direction and to be able to move up and down in the vertical direction. The robot arm 111 can extend and retract the arm portion 121 in the horizontal direction by bending the joints. The robot arm 111 can move the head portion 123 at the tip of the arm portion 121 in the vertical direction by moving the arm portion 121 up and down by the support portion 122. When the gate valve G of the process module PM opens, the robot arm 111 can extend the arm portion 121 and bring the head portion 123 close to the mounting table 31 through the transfer port 11a. The operation of the robot arm 111 is comprehensively controlled by the control unit 10.

[0053] On the lower surface of the head portion 123, a suction port 112, a supply port 113, an irradiation unit 114, and an imaging unit 115 are provided. The arrangement positions of the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 will be described later.

[0054] The suction port 112 sucks the deposits on the mounting table 31 when the head portion 123 approaches the mounting table 31. That is, the suction port 112 is connected to an exhaust device 131 via an exhaust pipe 131A that penetrates the robot arm 111, and the exhaust pipe 131A is provided with an openable and closable valve 131B. The suction port 112 sucks the deposits on the mounting table 31 by the exhaust operation of the exhaust device 131 by opening the valve 131B.

[0055] The supply port 113 supplies an inert gas to the mounting table 31 when the head portion 123 approaches the mounting table 31. The gas supplied from the supply port 113 is an inert gas, a gas that reacts with the deposits to facilitate the suction of the deposits on the mounting table 31, or a gas that reacts with the deposits to gasify the deposits. As the inert gas, for example, Ar, N2, or dry air, etc. are used. When an inert gas is used, the gas flow rate is appropriately set so as to blow off the deposits adhering to the mounting table 31. Examples of the gas that reacts with the deposits to facilitate the suction of the deposits from the mounting table 31, or the gas that reacts with the deposits to gasify the deposits include nitrogen trifluoride gas (NF3), fluorine gas (F2), etc. The suction port 112 sucks the deposits together with the gas supplied from the supply port 113. The supply port 113 is connected to a gas supply source (not shown) via a pipe that penetrates the robot arm 111, and supplies the gas supplied from the gas supply source to the mounting table 31.

[0056] When the head unit 123 approaches the mounting table 31, the irradiation unit 114 irradiates the mounting table 31 with plasma to remove deposits from the mounting table 31. The irradiation unit 114 can reduce the adhesion force of the deposits or gasify the deposits by reacting ions and radicals in the plasma with the deposits. The deposits with reduced adhesion force or the gasified deposits are detached from the mounting table 31 and sucked from the suction port 112. The irradiation unit 114 irradiates the mounting table 31 with plasma obtained by applying high-frequency power to a gas such as O2, O2 / Ar, or a fluorine-containing gas (such as CF4). Note that the irradiation unit 114 may irradiate the mounting table 31 with a laser, or may irradiate the mounting table 31 with both plasma and a laser. The laser may be any laser that heats the deposits to reduce the adhesion force of the deposits. The laser may also be a laser with a wavelength that gasifies the deposits. For example, a semiconductor laser with a wavelength of 808 nm, a laser spot area of 0.5 to 3 mm, and a laser power of 200 W may be used. Further, the irradiation unit 114 may irradiate the mounting table 31 with a laser in an environment where there is a gas (such as ozone gas) that has the effect of reducing the adhesion force of the deposits or the effect of gasifying the deposits.

[0057] The imaging unit 115 is, for example, an image sensor and images the mounting table 31 when the head unit 123 approaches the mounting table 31. Note that the imaging unit 115 may image the mounting table 31 while irradiating light as necessary. The operation of the imaging unit 115 is overall controlled by the control unit 10. The imaging unit 115 outputs the captured image obtained by imaging the mounting table 31 to the control unit 10. The control unit 10 detects the presence or absence of deposits on the mounting table 31 from the captured image. When deposits are detected from the captured image, the control unit 10 controls the valve 131B to start sucking the deposits from the suction port 112.

[0058] Further, a measuring instrument 132 is provided in the exhaust pipe 131A. The measuring instrument 132 measures the diameter and number of fine particles flowing in the exhaust pipe 131A, and outputs information on the number for each predetermined particle diameter section and information on the total number of fine particles to the control unit 10. When suction is performed from the suction port 112, the control unit 10 monitors whether the number for each predetermined particle diameter section and the total number of fine particles obtained from the measuring instrument 132 are equal to or less than a predetermined threshold value. When the number for each predetermined particle diameter section and the total number of fine particles are equal to or less than the predetermined threshold value, the control unit 10 controls the valve 131B to stop the suction from the suction port 112.

[0059] FIG. 5 is a diagram showing an example of the arrangement of the suction port 112, supply port 113, irradiation unit 114, and imaging unit 115 according to the embodiment. FIG. 5 shows a view of the head portion 123 of the robot arm 111 as seen from below. The head portion 123 is formed in a rectangular shape arranged such that a pair of short sides sandwich the arm portion 121 in a plan view. The suction port 112 is provided along each short side at a position inside a pair of short sides of the head portion 123. The supply port 113 is provided at a position adjacent to one of the two suction ports 112, and the irradiation unit 114 is provided at a position adjacent to the other of the two suction ports 112. The imaging unit 115 is provided at the center of the lower surface of the head portion 123.

[0060] Note that the arrangement positions of the suction port 112, supply port 113, irradiation unit 114, and imaging unit 115 shown in FIG. 5 are merely examples and are not limited thereto. For example, as shown in FIG. 6, the suction port 112 may be provided at a position inside a pair of short sides of the head portion 123 and surrounding the outer circumferences of the supply port 113 and the irradiation unit 114 respectively. FIG. 6 is a diagram showing another example of the arrangement of the suction port 112, supply port 113, irradiation unit 114, and imaging unit 115 according to the embodiment. Also, in FIGS. 5 and 6, the imaging unit 115 is provided on the lower surface of the same head portion 123 as the suction port 112, supply port 113, and irradiation unit 114, but it may be provided on the side surface of the head portion 123.

[0061] In addition, in FIG. 5, an example is shown in which the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 are arranged on the lower surface of the head unit 123. However, the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 may be further arranged on other surfaces of the tip of the robot arm 111. For example, the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 may be further arranged on the side surface or the upper surface of the tip of the robot arm 111. Thereby, the inside of the processing container 30 can be cleaned over a wide range.

[0062] Also, the head unit 123 may be configured to be rotatable in the vertical direction or the horizontal direction. For example, as shown in FIG. 7, the head unit 123 is fixedly attached to the tip of the arm unit 121 via a rotation axis 123a so as to be rotatable in the vertical direction, and the directions of the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 may be changed by changing the direction of the head unit 123. FIG. 7 is a diagram showing the configuration of the head unit 123 according to a modified example of the embodiment. FIG. 7 shows a state in which the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 are provided on the side surface of the head unit 123. For example, the robot arm 111 changes the directions of the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 upward by rotating the head unit 123 upward via the rotation axis 123a from the state shown in FIG. 7. Further, for example, the robot arm 111 changes the directions of the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 downward by rotating the head unit 123 downward via the rotation axis 123a from the state shown in FIG. 7. With such a configuration, it becomes possible to clean all locations such as the upper part, the side part, and the lower part inside the processing container 30. In FIG. 7, the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 are arranged in the vertical direction on the side surface of the head unit 123, but the present invention is not limited to this, and various arrangements are possible. Further, the cleaning is not limited to the inside of the processing container 30, and can also be performed inside the load lock module LLM or inside the vacuum transfer chamber 11.

[0063] Next, with reference to FIG. 8, a specific processing operation by the substrate processing system 1 will be described. FIG. 8 is a flowchart showing an example of the processing operation of the substrate processing system 1 according to the embodiment. The processing operation shown in FIG. 8 is mainly executed according to the control by the control unit 10.

[0064] First, dry cleaning of the processing container 30 is performed with the edge ring ER placed on the mounting table 31 (step S101).

[0065] When the dry cleaning is completed, the edge ring ER is carried out of the processing container 30 by the transfer mechanism 15 (step S102).

[0066] Subsequently, the mounting table 31 in the processing container 30 is cleaned by the suction mechanism 110 (step S103).

[0067] When the cleaning is completed, a replacement edge ring ER is carried into the processing container 30 (step S104).

[0068] Thereafter, the position of the edge ring ER is corrected (step S105).

[0069] Next, with reference to FIGS. 9A, 9B, and 10, an example of the operation when the edge ring ER is carried out of the processing container 30 and the mounting table 31 is cleaned will be described. FIGS. 9A and 9B are diagrams for explaining an example of the operation when the edge ring ER is carried out of the processing container 30 and the mounting table 31 is cleaned. FIG. 10 is a flowchart showing an example of the process of cleaning the mounting table 31. Note that FIG. 10 corresponds to the process of step S103 in FIG. 8.

[0070] When the edge ring ER is carried out from the processing container 30, the gate valve G of the process module PM opens. As a result, the vacuum transfer chamber 11 and the process module PM (processing container 30) communicate with each other via the transfer port 11a and the gate 84. When the vacuum transfer chamber 11 and the processing container 30 communicate, the second lifter pin projects from the mounting table 31, and the edge ring ER is disposed above the mounting table 31. The transfer mechanism 15 moves the fork portion 15b at the tip of the arm portion 15a to a height corresponding to the gate 84 by the support portion 15c. The transfer mechanism 15 extends the arm portion 15a toward the transfer port 11a side, and moves the fork portion 15b below the edge ring ER via the transfer port 11a. When the second lifter pin descends, the transfer mechanism 15 receives the edge ring ER supported on the second lifter pin with the fork portion 15b as shown in FIG. 9A. The transfer mechanism 15 contracts the arm portion 15a while holding the edge ring ER, and carries out the edge ring ER from the processing container 30.

[0071] Next, the transfer mechanism 15 moves the fork portion 15b holding the edge ring ER to a height corresponding to the empty lower support base in the storage chamber ST. The transfer mechanism 15 rotates the arm portion 15a toward the storage chamber ST side, and moves the edge ring ER above the empty lower support base. The transfer mechanism 15 lowers the arm portion 15a, and stores the edge ring ER in the empty lower support base.

[0072] Next, the robot arm 111 moves the head portion 123 at the tip of the arm portion 121 to a height corresponding to the gate 84 by the support portion 122. As shown in FIG. 9B, the robot arm 111 extends the arm portion 121 toward the transfer port 11a and approaches the head portion 123 to the mounting table 31 through the transfer port 11a. As shown in FIG. 10, the imaging unit 115 images the mounting table 31 from above and outputs the obtained captured image to the control unit 10 (step S111). That is, the imaging unit 115 outputs a captured image obtained by imaging the mounting surface 36d, the outer peripheral surface 36e, the ER mounting surface 36f, etc. of the electrostatic chuck 36 to the control unit. The control unit 10 detects the presence or absence of deposits on the mounting table 31 by comparing the captured image with a reference image obtained by previously imaging the cleaned or new mounting table 31 (step S112). When deposits are detected from the captured image (step S113: Yes), the control unit 10 moves the suction port 112 to the position of the deposits and controls the valve 131B to start suction by the suction port 112. Thereby, the deposits on the mounting table 31 (that is, the deposits remaining on the mounting surface 36d, the outer peripheral surface 36e, the ER mounting surface 36f, etc. of the electrostatic chuck 36) are sucked by the suction port 112 (step S114). For example, when dry cleaning is performed with the edge ring ER mounted on the mounting table 31, the reaction product remains as a deposit without being completely removed on the outer peripheral surface of the electrostatic chuck 36. In such a case, the control unit 10 sucks, for example, the deposits remaining on the outer peripheral surface of the electrostatic chuck 36 from the suction port 112.

[0073] Note that the suction port 112 may suck the deposits on the mounting table 31 in a state where an inert gas is supplied into the processing container 30 so that the pressure inside the processing container 30 and inside the vacuum transfer chamber 11 is maintained from the shower head 46. As the inert gas, for example, Ar, N2, dry air, or the like is used. Note that the supply source of the inert gas is not limited to the shower head 46, and may be, for example, a purge port (not shown) that supplies gas when the inside of the processing container 30 is opened to the atmosphere. Further, the suction port 112 may suck the deposits on the mounting table 31 in a state where an inert gas is supplied into the vacuum transfer chamber 11 from the gas supply unit of the vacuum transfer chamber 11. Furthermore, the suction port 112 may suck the deposits on the mounting table 31 in a state where an inert gas is supplied into both the processing container 30 and the vacuum transfer chamber 11.

[0074] When suction is performed from the suction port 112, the control unit 10 monitors whether the number of fine particles for each predetermined particle size range obtained from the measuring instrument 132 and the total number of fine particles are equal to or less than a predetermined threshold value. When the number of fine particles is equal to or less than the predetermined threshold value, the control unit 10 controls the valve 131B to stop the suction from the suction port 112.

[0075] When the suction from the suction port 112 is stopped, the imaging unit 115 images the mounting table 31 again from above and outputs the obtained captured image to the control unit 10 (step S115). The control unit 10 detects the presence or absence of deposits on the mounting table 31 by comparing the captured image with a reference image obtained by previously imaging the cleaned or new mounting table 31 (step S116). When deposits are detected again from the captured image (step S117: Yes), the control unit 10 controls the valve 131B to start suction by the suction port 112. At this time, the supply port 113 supplies gas to the mounting table 31 (step S118). The suction port 112 sucks the deposits together with the gas supplied from the supply port 113. When the number of fine particles for each predetermined particle size range obtained from the measuring instrument 132 and the total number of fine particles are equal to or less than the threshold value, the control unit 10 controls the valve 131B to stop the suction from the suction port 112.

[0076] When the suction from the suction port 112 stops, the imaging unit 115 images the mounting table 31 again from above and outputs the obtained captured image to the control unit 10 (step S119). The control unit 10 detects the presence or absence of deposits on the mounting table 31 by comparing the captured image with a reference image obtained by previously imaging the cleaned or new mounting table 31 (step S120). When deposits are detected again from the captured image (step S121: Yes), the control unit 10 controls the valve 131B to start suction by the suction port 112. At this time, the irradiation unit 114 irradiates the mounting table 31 with plasma, laser, or both plasma and laser to remove the deposits from the mounting table 31 (step S122). The suction port 112 sucks the deposits removed from the mounting table 31. Note that the control unit 10 may suck the deposits by the suction port 112 after irradiating the mounting table 31 with one or both of plasma and laser by the irradiation unit 114. When the number of fine particles obtained from the measuring instrument 132 is equal to or less than the threshold value, the control unit 10 controls the valve 131B to stop the suction from the suction port 112.

[0077] When the suction from the suction port 112 stops, the imaging unit 115 images the mounting table 31 again from above and outputs the obtained captured image to the control unit (step S123). The control unit 10 detects the presence or absence of deposits on the mounting table 31 by comparing the captured image with a reference image obtained by previously imaging the cleaned or new mounting table 31 (step S124). When deposits are detected again from the captured image (step S125: Yes), the control unit 10 notifies the operator of the substrate processing system 1 of an alert (step S126). The operator who has received the alert notification opens the process chamber 30 to the atmosphere and performs maintenance including cleaning the mounting table 31.

[0078] Also, when no deposits are detected from the captured image (step S113: No, step S117: No, step S121: No, step S125: No), the control unit 10 ends the process of cleaning the mounting table 31. In this way, the mounting table 31 is cleaned.

[0079] When the cleaning of the mounting table 31 is completed, the robot arm 111 contracts the arm portion 121 and returns the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 to their original positions within the vacuum transfer chamber 11.

[0080] Next, with reference to FIGS. 11A to 11D, an example of the operation when loading the replacement edge ring ER into the processing container 30 will be described. FIGS. 11A to 11D are diagrams for explaining an example of the operation when loading the edge ring ER into the processing container 30. FIG. 12 is a flowchart showing an example of the process for correcting the position of the edge ring ER after loading. Note that FIG. 12 corresponds to the process of step S105 in FIG. 8.

[0081] When loading the replacement edge ring ER into the processing container 30, the transfer mechanism 15 moves the fork portion 15b to a height corresponding to the upper support base on which the replacement edge ring ER in the storage chamber ST is placed. The transfer mechanism 15 rotates the arm portion 15a toward the replacement edge ring ER side and holds the replacement edge ring ER with the fork portion 15b. The transfer mechanism 15 rotates the arm portion 15a toward the gate 84 side while holding the replacement edge ring ER.

[0082] Next, the transfer mechanism 15 moves the fork portion 15b to a height corresponding to the gate 84. As shown by the dashed line in FIG. 11A, the transfer mechanism 15 extends the arm portion 15a toward the transfer port 11a side and transports the replacement edge ring ER above the mounting table 31 via the transfer port 11a and the gate 84.

[0083] When the fork portion 15b holding the replacement edge ring ER reaches above the mounting table 31, a second lifter pin (not shown) protrudes from the mounting table 31, and the replacement edge ring ER is transferred from the fork portion 15b to the second lifter pin. When the replacement edge ring ER is transferred from the fork portion 15b to the second lifter pin, the transfer mechanism 15 contracts the arm portion 15a and returns the fork portion 15b to its original position in the vacuum transfer chamber 11. The second lifter pin supporting the replacement edge ring ER descends, and the replacement edge ring ER is placed on the outer peripheral portion of the mounting table 31.

[0084] Next, as shown in FIG. 11B, the robot arm 111 moves the head portion 123 to a height corresponding to the gate 84. The robot arm 111 extends the arm portion 121 toward the transfer port 11a side, and approaches the head portion 123 to the mounting table 31 through the transfer port 11a and the gate 84. As shown in FIG. 12, the imaging unit 115 images the gap between the replacement edge ring ER and the electrostatic chuck 36 of the mounting table 31 at a plurality of positions in the circumferential direction (step S131). For example, the imaging unit 115 sequentially images the gap between the replacement edge ring ER and the electrostatic chuck 36 of the mounting table 31 at a plurality of imaging positions set at equal intervals in the circumferential direction of the mounting table 31.

[0085] FIG. 13 is a diagram showing an example of the imaging positions in the imaging unit 115. FIG. 13 corresponds to a top view of the replacement edge ring ER and the electrostatic chuck 36 of the mounting table 31 as viewed from above. In FIG. 13, the mounting surface 36d of the mounting table 31 is shown in a disc shape, and the replacement edge ring ER is shown in a ring shape around the mounting surface 36d. The imaging positions P in the imaging unit 115 are set at four equal intervals at every 90-degree angle with respect to the circumferential direction of the mounting table 31. Note that the imaging positions may be set to three or less, or may be set to five or more with respect to the circumferential direction of the mounting table 31. Further, the imaging unit 115 may image the gap between the replacement edge ring ER and the electrostatic chuck 36 of the mounting table 31 at once.

[0086] Returning to FIG. 11B. The imaging unit 115 outputs the captured images obtained by imaging the gap between the replacement edge ring ER and the electrostatic chuck 36 of the mounting table 31 at a plurality of positions in the circumferential direction to the control unit 10. As shown in FIG. 12, the control unit 10 compares the captured image with a correction reference image obtained by previously imaging the edge ring ER in a non-shifted state (step S132), and calculates the deviation amount between the width of the gap and the reference width at each of the plurality of positions in the circumferential direction (step S133). The reference width is, for example, the width of the gap measured in advance when the center of the replacement edge ring ER and the center of the electrostatic chuck 36 coincide.

[0087] Next, the control unit 10 determines whether or not the calculated deviation amount is within the allowable value (step S134). When the calculated deviation amount is outside the allowable value (step S134: No), the control unit 10 controls the transport mechanism 15 to correct the position of the replacement edge ring ER by the calculated deviation amount (step S135). That is, when a second lifter pin (not shown) protrudes from the mounting table 31 and the replacement edge ring ER is disposed above the mounting table 31, the transport mechanism 15 moves the fork portion 15b to a height corresponding to the gate 84. Then, the transport mechanism 140 extends the arm portion 15a toward the transport port 11a side, and moves the fork portion 15b below the replacement edge ring ER through the transport port 11a. When the second lifter pin descends, the transport mechanism 15 receives the replacement edge ring ER supported on the second lifter pin with the fork portion 15b as shown in FIG. 11C. The transport mechanism 15 horizontally moves the arm portion 15a while holding the replacement edge ring ER so that the calculated deviation amount becomes zero. When the replacement edge ring ER moves and the deviation amount becomes zero, the second lifter pin protrudes from the mounting table 31, and the replacement edge ring ER is transferred from the fork portion 15b to the second lifter pin. When the replacement edge ring ER is transferred from the fork portion 15b to the second lifter pin, the transport mechanism 15 contracts the arm portion 15a and returns the fork portion 15b to its original position in the vacuum transfer chamber 11. The second lifter pin that supports the replacement edge ring ER descends, and the replacement edge ring ER is placed on the outer peripheral portion of the mounting table 31. After correcting the deviation amount, the control unit 10 may return the process to step S131, and the imaging unit 115 may image the gap between the replacement edge ring ER and the electrostatic chuck 36 of the mounting table 31 to confirm that the deviation amount is within the allowable value (steps S131 to S134). Further, when the deviation amount is outside the allowable value, the control unit 10 may correct the deviation amount of the replacement edge ring ER to zero again as described above (step S135).

[0088] Further, when the calculated deviation amount is within the allowable value (step S134: Yes), the control unit 10 ends the process. Thereby, the loading of the replacement edge ring ER into the processing container 30 is completed.

[0089] When the loading of the edge ring ER into the processing container 30 is completed, the robot arm 111 moves the head portion 123 at the tip of the arm portion 121 to the height corresponding to the gate 84 by the support portion 122. As shown in FIG. 11D, the robot arm 111 extends the arm portion 121 toward the transfer port 11a side and approaches the head portion 123 to the gate 84 through the transfer port 11a. Thereafter, the robot arm 111, the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 operate in the same order as when cleaning the mounting table 31 to clean the gate 84.

[0090] As described above, the operation when loading the replacement edge ring ER into the processing container 30 has been described. However, not limited to the replacement edge ring ER, the same applies to the operation when loading the edge ring ER that has been temporarily unloaded from the process module PM and retracted to the support base of the storage room ST back into the processing container 30 again.

[0091] (Modification example) In the above embodiment, the case where the mounting table 31 as an object in the processing container 30 is cleaned has been described. However, the substrate processing system 1 may clean the object in the load lock module LLM. The object in the load lock module LLM may be, for example, a table on which the wafer W is placed. FIG. 14 is a diagram showing an example of the operation when cleaning the table in the load lock module LLM. The load lock module LLM has an opening 151a communicating with the vacuum transfer chamber 11 and an opening 151b communicating with the atmospheric pressure transfer chamber 12. A gate valve G is attached to each of the opening 151a communicating with the vacuum transfer chamber 11 and the opening 151b communicating with the atmospheric pressure transfer chamber 12. A table 150 for placing the wafer W is provided in the load lock module LLM. When cleaning the table 150 in the load lock module LLM, both the gate valve G on the vacuum transfer chamber 11 side and the gate valve G on the atmospheric pressure transfer chamber 12 side are closed, and the load lock module LLM is evacuated. In a state where the load lock module LLM reaches a predetermined degree of vacuum, in other words, in a state where the atmosphere of the load lock module LLM is switched to a vacuum atmosphere, the gate valve G on the vacuum transfer chamber 11 side opens. As shown in FIG. 14, the transfer port 11b of the vacuum transfer chamber 11 communicates with the load lock module LLM when the gate valve G on the vacuum transfer chamber 11 side opens. The suction mechanism 110 sucks the deposits on the table 150 in the load lock module LLM through the transfer port 11b. That is, the robot arm 111, the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 of the suction mechanism 110 operate in the same order as when cleaning the mounting table 31 to clean the table 150 in the load lock module LLM.

[0092] Further, the substrate processing system 1 may clean the bottom surface of the vacuum transfer chamber 11. FIG. 15 is a diagram showing an example of the operation when cleaning the bottom surface 11c of the vacuum transfer chamber 11. The vacuum transfer chamber 11 has a recessed portion 11d that recesses from the bottom surface 11c of the vacuum transfer chamber 11. The suction mechanism 110 is disposed in the recessed portion 11d and sucks the deposits on the bottom surface 11c of the vacuum transfer chamber 11. That is, as shown in FIG. 15, the robot arm 111 of the suction mechanism 110 moves the head portion 123 to a height corresponding to the bottom surface 11c of the vacuum transfer chamber 11. Thereafter, the robot arm 111, the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 operate in the same order as when cleaning the mounting table 31 to clean the bottom surface 11c of the vacuum transfer chamber 11.

[0093] Thus, the substrate processing system (for example, the substrate processing system 1) according to the embodiment includes a substrate processing apparatus (for example, the process module PM), a vacuum transfer chamber (for example, the vacuum transfer chamber 11), a transfer mechanism (for example, the transfer mechanism 15), a suction mechanism (for example, the suction mechanism 110), and a control unit (for example, the control unit 10). The substrate processing apparatus has a vacuum processing chamber (for example, the processing container 30) in which vacuum processing is performed on a substrate (for example, a wafer W). The vacuum transfer chamber is connected to the vacuum processing chamber and has a transfer port (for example, the transfer port 11a) that can communicate with the vacuum processing chamber. The transfer mechanism is disposed in the vacuum transfer chamber and transfers the substrate through the transfer port. The suction mechanism is disposed in the vacuum transfer chamber and sucks the deposits on the components (for example, the mounting table 31) in the vacuum processing chamber through the transfer port. The control unit controls the transfer mechanism and the suction mechanism. Thereby, the substrate processing system can efficiently clean the inside of the vacuum transfer chamber without opening to the atmosphere.

[0094]

[0095] ​Further, the suction mechanism includes an arm (e.g., robot arm 111) and a suction port (e.g., suction port 112) provided at the tip of the arm. The control unit controls the suction port provided at the tip of the arm to enter the vacuum processing chamber through the transfer port and suction the deposits of the components in the vacuum processing chamber from the suction port. Thereby, the deposits can be suctioned by the suction port near the object in the vacuum processing chamber.

[0096] Also, when suctioning the deposits, the control unit controls to supply an inert gas to one or both of the vacuum processing chamber and the vacuum transfer chamber. Thereby, the deposits can be suctioned together with the inert gas by the suction port.

[0097] Further, the suction mechanism further includes a supply port (e.g., supply port 113) provided at the tip of the arm. The supply port supplies gas toward the components in the vacuum processing chamber. Thereby, while blowing off the deposits from the object in the vacuum processing chamber with the inert gas, the deposits can be suctioned together with the inert gas by the suction port.

[0098] Further, the suction mechanism further includes an irradiation unit (e.g., irradiation unit 114) provided at the tip of the arm. The irradiation unit irradiates one or both of plasma and laser toward the components in the vacuum processing chamber. Thereby, the deposits removed from the object in the vacuum processing chamber can be suctioned by the suction port.

[0099] Further, the suction mechanism further includes an imaging unit (e.g., imaging unit 115) provided at the tip of the arm. The imaging unit images the components in the vacuum processing chamber. Thereby, an imaging image used for detecting the presence or absence of deposits can be obtained.

[0100] In addition, the substrate processing system further includes a valve (e.g., valve 131B) provided in an exhaust pipe (e.g., exhaust pipe 131A) that connects a suction port and an exhaust device (e.g., exhaust device 131), and a measuring instrument (e.g., measuring instrument 132) that measures the number of fine particles flowing in the exhaust pipe. When the number of fine particles measured by the measuring instrument is equal to or less than a predetermined threshold value, the control unit controls the valve to stop the suction from the suction port. Thereby, the suction from the suction port can be stopped at an appropriate timing.

[0101] In addition, the component is a mounting table (e.g., mounting table 31) having a first mounting portion (e.g., electrostatic chuck 36) on which a substrate is placed, and a second mounting portion (e.g., outer peripheral portion) that is annularly provided in the outer concave portion of the first mounting portion and on which an edge ring (e.g., edge ring ER) is placed. The control unit controls to suck the deposits on the first mounting portion of the mounting table in a state where the substrate is carried out by the transfer mechanism. Thereby, the mounting portion of the mounting table that is exposed as the substrate is carried out can be cleaned.

[0102] In addition, the control unit controls to suck at least the deposits on the second mounting portion of the mounting table in a state where the edge ring is carried out by the transfer mechanism. Thereby, the outer peripheral surface of the mounting portion of the mounting table that is exposed as the edge ring is carried out can be cleaned.

[0103] In addition, after the transfer mechanism carries the edge ring into the vacuum processing chamber through the transfer port and places it on the second mounting portion of the mounting table, the control unit uses an imaging unit (e.g., imaging unit 115) provided at the tip of the arm to image the gap between the edge ring and the first mounting portion of the mounting table at a plurality of positions in the circumferential direction. Thereby, an imaging image for correcting the position of the replacement edge ring placed on the second mounting portion of the mounting table can be obtained.

[0104] In addition, the control unit 10 calculates the deviation amount between the width of the gap and the reference width for each of a plurality of positions in the circumferential direction based on the captured imaging image, and controls the transfer mechanism based on the deviation amount. Thereby, the position of the replacement edge ring can be corrected.

[0105] Further, the substrate processing system is further connected to a vacuum transfer chamber and has a load lock chamber (for example, a load lock module LLM) that switches the atmosphere between a vacuum atmosphere and an atmospheric pressure atmosphere. The vacuum transfer chamber has a transfer port (for example, transfer port 11b) that can communicate with the load lock chamber. The control unit controls the suction mechanism to enter the load lock chamber through the transfer port in a state where the atmosphere of the load lock chamber is switched to a vacuum atmosphere, and to suck the deposits on at least the table on which the substrate is placed in the load lock chamber. Thereby, the substrate processing system can efficiently clean the inside of the load lock chamber without opening to the atmosphere.

[0106] Further, the vacuum transfer chamber has a recessed portion (for example, recessed portion 11d) that recesses from the bottom surface of the vacuum transfer chamber (for example, bottom surface 11c), the suction mechanism is disposed in the recessed portion, and the control unit sucks the deposits on the bottom surface of the vacuum transfer chamber. Thereby, the substrate processing system can efficiently clean the bottom surface of the vacuum transfer chamber without opening to the atmosphere.

[0107] (Others) In the above embodiment, the case of cleaning the mounting table 31 as the object in the processing container 30 has been described as an example, but the disclosed technology is not limited to this. The substrate processing system 1 may clean components other than the mounting table 31 as long as they are components located in the processing container 30. Further, the control unit 10 compares the captured image obtained by capturing the components in the processing container 30 by the imaging unit 115 with the captured image obtained by capturing new components, and determines the abnormality of the components in the processing container 30 based on at least one of the surface state, shape, and size. Further, when it is determined that an abnormality has occurred in the components in the processing container 30, the control unit 10 may output an instruction to replace the components.

[0108] In addition, in the above-described embodiment, the case of replacing the edge ring ER as a consumable part has been described as an example, but the disclosed technology is not limited to this. The consumable part to be replaced may be, in addition to the edge ring ER, a cover ring (not shown) disposed on the outer peripheral side of the edge ring ER, or any part that can be carried into the processing container 30 and carried out from the processing container 30 by a transfer mechanism such as a robot arm.

[0109] Further, in the above-described embodiment, the imaging unit 115 may be configured to be able to acquire a stereoscopic image. As such an imaging unit 115, for example, a 3D scanner or the like may be used. Further, the imaging unit 115 may detect an adherent by comparing the acquired stereoscopic image with a reference image.

[0110] Further, in the above-described embodiment, the suction port 112 and the supply port 113 may be provided on the lower surface of the head unit 123 such that the direction in which the gas supplied from the supply port 113 is reflected on the mounting table 31 coincides with the direction in which the adherent is sucked by the suction port 112.

[0111] Further, in the above-described embodiment, the supply port 113 may supply dry ice instead of, or together with, the gas. In such a case, the adherent on the mounting table 31 is removed by the collision with the dry ice and sucked by the suction port 112.

[0112] Further, in the above-described embodiment, the supply port 113 may supply a chemical solution instead of, or together with, the gas. In such a case, the adherent on the mounting table 31 is dissolved by the chemical solution and sucked together with the chemical solution by the suction port 112. As the chemical solution, for example, alcohol can be used.

[0113] Further, in the above-described embodiment, the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 may be configured to be detachable from the lower surface of the head unit 123.

[0114] Also, in the above embodiment, the arrangement positions of the suction port 112, the supply port 113, the irradiation unit 114, and the imaging unit 115 may be interchangeable.

[0115] Also, in the above embodiment, when cleaning by communicating the vacuum transfer chamber 11 and the processing container 30, the pressure in the vacuum transfer chamber 11 and the pressure in the processing container 30 may be adjusted so that the processing gas in the processing container 30 does not leak to the vacuum transfer chamber 11 side. For example, the pressure in the vacuum transfer chamber 11 may be made higher than the pressure in the processing container 30.

[0116] Also, in the above embodiment, a self-propelled cleaning robot may be provided in the vacuum transfer chamber 11. The self-propelled cleaning robot may clean the inside of the vacuum transfer chamber 11, or may advance an arm equipped with cleaning equipment from the self-propelled main body into the processing container 30 and perform cleaning inside the processing container 30 using the cleaning equipment.

[0117] It should be considered that all the embodiments disclosed this time are illustrative in all respects and not restrictive. The above embodiments may be omitted, replaced, or changed in various forms without departing from the scope and gist of the appended claims.

Explanation of Reference Numerals

[0118] 1 Substrate processing system 10 Control unit 11 Vacuum transfer chamber 11a, 11b Transfer ports 11c Bottom surface 11d Depressed portion 15 Transfer mechanism 30 Processing container 31 Mounting table 36 Electrostatic chuck 84 Gate 110 Suction mechanism 111 Robot arm 112 Suction port 113 Supply port 114 Irradiation unit 115 Imaging unit 131 Exhaust device 131A Exhaust Pipe 132 Measuring Instrument ER Edge Ring LLM Load Lock Module PM Process Module W Wafer

Claims

[Claim 1] a substrate processing apparatus having a vacuum processing chamber in which processing is performed on a substrate; a vacuum transfer chamber connected to the vacuum processing chamber and having a transfer port capable of communicating with the vacuum processing chamber; a transfer mechanism disposed in the vacuum transfer chamber and configured to transfer at least a substrate through the transfer port; a suction mechanism that is disposed in the vacuum transfer chamber and that sucks up adhesions of components in the vacuum processing chamber through the transfer port; A control unit that controls the transport mechanism and the suction mechanism; A substrate processing system comprising:

Images