Photoelectric conversion device

Abstract

To provide a photoelectric conversion device that comprises a mode for performing a plurality of different types of signal scanning simultaneously in parallel, and that can reduce crosstalk.SOLUTION: A plurality of pixels each include a photoelectric conversion part and a selection part. A plurality of signal lines include a first signal line group including a first signal line connected to a first pixel, a second signal line group including a second signal line connected to a second pixel, and a second signal line group including a third signal line connected to a third pixel. The plurality of pixels include first connection wiring. The first signal line group and the second signal line group including the third signal line has first shield wiring arranged therebetween, to which a constant potential is supplied. In plan view, the first connection wiring overlaps the first signal line group and does not overlap the second signal line group including the second signal line.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present invention relates to a photoelectric conversion device.

Background Art

[0002] In recent years, as imaging devices such as digital still cameras and digital video cameras, CMOS image sensors suitable for high-speed reading have been widely used. For example, a CMOS image sensor has been proposed that can reduce restrictions when performing a plurality of different signal scans simultaneously in parallel (Patent Document 1). In Patent Document 1, in a pixel including three or more signal lines and two or more selection circuits, in the first operation mode, the first selection circuit is used, and in the second operation mode, a second selection circuit different from the first selection circuit is used. is disclosed. In addition, a CMOS image sensor has been proposed in which a connection wiring connected to either the output transistor or one of the signal lines is orthogonal to all the signal lines to stabilize the parasitic capacitance (Patent Document 2). Patent Document 2 discloses that a connection wiring connected to either the output transistor or one of the vertical signal lines is orthogonal to all the signal lines.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] In Patent Documents 1 and 2, when a plurality of different signal scans are performed simultaneously in parallel, crosstalk may occur through the parasitic capacitance between the signal lines used in the first operation mode and the signal lines used in the second operation mode.

[0005] An object of the present invention is to provide a photoelectric conversion device having a mode of simultaneously and parallelly performing a plurality of different signal scans, which can reduce crosstalk.

Means for Solving the Problems

[0006] One aspect of the present invention is a photoelectric conversion device, comprising: a plurality of pixels arranged over a plurality of rows and a plurality of columns; and a plurality of signal lines, each of the plurality of pixels including a photoelectric conversion unit and a selection unit that controls output of a pixel signal based on charges generated by the photoelectric conversion unit to the signal lines, the plurality of pixels including a first pixel arranged in the first column and the first row, a second pixel arranged in the first column and a second row different from the first row, and a third pixel arranged in the second column adjacent to the first column and the second row, the plurality of signal lines including a first signal line group composed of one or more of the signal lines and including a first signal line connected to the first pixel, a second signal line group composed of one or more of the signal lines and including a second signal line connected to the second pixel, and a second signal line group composed of one or more of the signal lines and including a third signal line connected to the third pixel, the plurality of signal lines including a first connection wiring connected to the selection unit of the first pixel and the first signal line, a first shield wiring to which a fixed potential is supplied being arranged between the first signal line group and the second signal line group including the third signal line, and in a plan view seen from a direction orthogonal to the surface on which the plurality of pixels are arranged, the first connection wiring overlapping the first signal line group and not overlapping the second signal line group including the second signal line.

Effects of the Invention

[0007] In a photoelectric conversion device having a mode of simultaneously and parallelly performing a plurality of different signal scans, crosstalk can be reduced.

Brief Description of the Drawings

[0008]

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Modes for Carrying Out the Invention

[0009] Hereinafter, each embodiment will be described with reference to the drawings. The following embodiments are for embodying the technical idea of the present invention and do not limit the present invention. The sizes and positional relationships of the members shown in each drawing may be exaggerated for clarity of explanation. In the following description, the same components may be denoted by the same reference numerals and the description thereof may be omitted. In this specification, for components having a similar configuration, a “-” and a “number” such as -1, -2, -3, etc. may be appended to the end of the reference numeral and the description thereof may be omitted.

[0010] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, terms indicating a specific direction or position (for example, “up”, “down”, “right”, “left” and other terms including those terms) are used as necessary. The use of those terms is for facilitating the understanding of the embodiments with reference to the drawings, and the technical scope of the present invention is not limited by the meanings of those terms.

[0011] In this specification, the plane refers to the surface viewed from a direction perpendicular to the light incident surface of the semiconductor layer. Further, the cross section refers to the surface in the direction perpendicular to the light incident surface of the semiconductor layer. When the light incident surface of the semiconductor layer is a rough surface when viewed microscopically, the plane and the cross section are defined based on the light incident surface of the semiconductor layer when viewed macroscopically.

[0012] The plan view refers to the case of viewing the aforementioned plane. For example, the plan view refers to the case of viewing from a direction orthogonal to the surface on which a plurality of pixels are arranged.

[0013] In each of the embodiments described below, as an example of the photoelectric conversion device, an imaging device will be mainly described. However, each embodiment is not limited to the imaging device and is also applicable to other examples of the photoelectric conversion device. For example, there are a distance measuring device (a device for distance measurement using focus detection or TOF (Time Of Flight)), a photometric device (a device for measuring the amount of incident light), and the like.

[0014] Note that the conductivity type of the transistor described in the embodiments below is an example only and is not limited to only the conductivity types described in the embodiments. For the conductivity types described in the embodiments, the conductivity type can be changed as appropriate, and along with this change, the potentials of the gate, source, and drain of the transistor are changed as appropriate.

[0015] For example, for a transistor that operates as a switch, the low level and high level of the potential supplied to the gate may be reversed with respect to the description in the embodiments along with the change in the conductivity type. Also, the conductivity type of the semiconductor region described in the embodiments below is an example only and is not limited to only the conductivity types described in the embodiments. For the conductivity types described in the embodiments, the conductivity type can be changed as appropriate, and along with this change, the potential of the semiconductor region is changed as appropriate.

[0016] Also, in the following embodiments, the connection between the elements of the circuit may be described. In this case, even if another element is interposed between the elements of interest, unless otherwise specified, the elements of interest are treated as being connected. For example, assume that element A is connected to one node of a capacitive element C having a plurality of nodes and element B is connected to the other node. Even in such a case, unless otherwise specified, elements A and B are treated as being connected.

[0017] Below, vertical scanning is schematically shown as signal scanning in the photoelectric conversion device, and the case where the signal lines are vertical signal lines extending in the vertical direction is schematically shown. Note that even when the signal scanning is horizontal scanning and the signal lines are horizontal signal lines extending in the horizontal direction, the effect of reducing crosstalk can be obtained.

[0018] (Embodiment 1) FIG. 1 is a schematic block diagram of a photoelectric conversion device according to the present embodiment. The photoelectric conversion device 101 includes a photoelectric conversion region 102 in which a plurality of pixels are arranged in a matrix, a vertical scanning circuit 103 for driving each part included in the pixel, a power supply unit 104, a horizontal scanning circuit 105 for reading out the electrical signal of the pixel, and an output unit 106 to which the electrical signal of the pixel is output. The plurality of pixels are arranged over a plurality of rows and a plurality of columns. With this photoelectric conversion device, the amount of light on the photoelectric conversion region can be output as a two-dimensional electrical signal.

[0019] In the photoelectric conversion device 101, the photoelectric conversion region 102 may be arranged in a first semiconductor layer, and the vertical scanning circuit 103, the power supply unit 104, the horizontal scanning circuit 105, and the output unit 106 may be arranged in a second semiconductor layer, and the second semiconductor layer and the first semiconductor layer may be stacked and configured.

[0020] FIG. 2 is an equivalent circuit diagram of the pixels included in the photoelectric conversion region 102. In FIG. 2, for simplicity, a configuration of 3 rows and 2 columns among the plurality of pixels arranged over a plurality of rows and a plurality of columns is shown, but the number of pixels is not limited thereto. Also, three signal lines 17-1, 17-2, and 17-3 are arranged for one column, but the number of signal lines is not limited thereto. Further, in FIG. 2, the signal line 17 extends in the column direction, but the signal line 17 may extend in the row direction.

[0021] Pixel 201 includes a photoelectric conversion unit 1, a floating diffusion unit 2, and a transfer unit 11 provided between the photoelectric conversion unit 1 and the floating diffusion unit 2. Further, it includes a capacitance switching unit 12 for switching the capacitance of the floating diffusion unit 2 as needed. It also includes a reset unit 13 for resetting the floating diffusion unit 2 and an amplification unit 14 for outputting a signal of the floating diffusion unit 2. Furthermore, it includes a selection unit (row selection unit) 15 for controlling the output of a signal from the amplification unit 14 to the signal line 17. Typically, MOS transistors are used as each of the transfer unit 11, the capacitance switching unit 12, the reset unit 13, the amplification unit 14, and the selection unit 15, but it is not limited to this form. In the embodiments described below, the transistor will be described as an N-type MOS transistor, but as described above, the conductivity type can be changed as appropriate.

[0022] The photoelectric conversion unit 1 receives the light incident on the pixel 201 and generates charges corresponding to the amount of received light. For example, a photodiode can be used as the photoelectric conversion unit 1. The floating diffusion unit 2 temporarily holds the charges transferred from the photoelectric conversion unit 1 and functions as a charge-voltage conversion unit that converts the held charges into a voltage signal.

[0023] The transfer unit 11 is driven by a transfer unit drive pulse pTX and transfers the charges generated in the photoelectric conversion unit 1 to the floating diffusion unit 2.

[0024] The capacitance switching unit 12 is driven by a floating diffusion capacitance switching pulse pSW and switches the capacitance of the floating diffusion unit 2. By turning on the capacitance switching unit 12, the gate capacitance of the capacitance switching unit 12 can be added to the floating diffusion unit 2.

[0025] The reset unit 13 is driven by a reset unit drive pulse pRES. At that time, by turning on the reset unit and the capacitance switching unit simultaneously, the floating diffusion unit 2 can be reset.

[0026] The amplification unit 14 amplifies the voltage signal converted by the floating diffusion unit 2 and outputs it as a pixel signal.

[0027] The selection unit 15 is driven by a selection drive pulse pSEL, and outputs the pixel signal amplified by the amplification unit 14 to any one of signal lines 17-1, 17-2, and 17-3. In this embodiment, since the signal lines are vertical signal lines extending in the vertical direction, the selection unit is a row selection unit driven by a row selection drive pulse.

[0028] The plurality of rows composed of a plurality of pixels 201 include a first group of rows and a second group of rows. The first group of rows and the second group of rows are different rows from each other. In FIGS. 2 and 4, the rows in which the pixels 201-1 and 201-2 are arranged are taken as the first group of rows, and the row in which the pixel 201-3 is arranged is taken as the second group of rows, but it is not necessarily limited to this. The pixel 201-2 in the first group of rows is referred to as a pixel (first pixel) arranged in the first column and the first row, and the pixel 201-3 in the second group of rows is referred to as a pixel (second pixel) arranged in the first row and a second row different from the first row. Also, in the second column adjacent to the first column, the pixels 201-4, the pixel 201-5 (third pixel), and the pixel 201-6 are arranged. The pixel 201-5 is arranged in the second column and the second row. That is, the third pixel is arranged adjacent to the second pixel. The pixels 201-1 and 201-2 in the first group of rows can be used, for example, to generate an image signal for recording. The pixel 201-3 in the second group of rows can be used, for example, to generate an image signal for display. Note that, hereinafter, the description will be made on the premise of an example in which the obtained image signal is used in the above-described usage, but the usage of the obtained image signal is not limited to the above example. For example, the pixels 201-1 and 201-2 in the first group of rows may be used to generate an image signal for video display, and the pixel 201-3 in the second group of rows may be used to generate an image signal for sensing.

[0029] In FIG. 3, the horizontal axis represents the scanning period in the vertical direction at time t, and the vertical axis represents the readout lines among the pixels arranged in a plurality of rows. The solid line 301 is a scan for reading out the image signal for recording from the photoelectric conversion unit 1 of the first group of rows, and this is referred to as the first scan. The dotted line 302 is a scan for reading out the image signal for display from the photoelectric conversion unit 1 of the second group of rows, and this is referred to as the second scan. In the example of FIG. 2, out of the three signal lines provided in each column, two signal lines 17-1 and 17-2 are used for the first scan. One or more signal lines used for the first scan are defined as the first signal line group 171. Also, out of the three signal lines provided in each column, the signal line 17-3 is used for the second scan. One or more signal lines used for the second scan are defined as the second signal line group 172. In a predetermined mode, it is possible to simultaneously read out the image signal for recording from the pixels 201-1 and 201-2 of a plurality of first group of rows and the image signal for display from the pixels 201-3 of a plurality of second group of rows.

[0030] In this embodiment, the number of pixel rows of the first group of rows used for the first scan is larger than the number of pixel rows of the second group of rows used for the second scan. That is, the number of signal lines constituting the first signal line group 171 is larger than the number of signal lines constituting the second signal line group 172. Note that the number of pixel rows of the first group of rows and the number of pixel rows of the second group of rows may be the same, or the number of pixel rows of the first group of rows may be at least smaller than the number of pixel rows of the second group of rows.

[0031] FIG. 4(a) is a plan view of the pixel 201 in Embodiment 1, showing pixels for two columns and three rows. FIG. 4(a) shows a layout of a part of the diffusion region in the semiconductor layer, the gate of the transistor, and the first wiring layer provided above the semiconductor layer. In the present embodiment, the photoelectric conversion device is a back-illuminated type photoelectric conversion device in which light is irradiated from below the semiconductor layer, that is, from the side opposite to the side where the first wiring layer is disposed in the semiconductor layer. Note that the present invention may be a front-illuminated type photoelectric conversion device in which light is irradiated from the side where the first wiring layer is disposed. In FIGS. 4(a) and 4(b), elements that are the same as or corresponding to the elements shown in FIG. 2 are denoted by the same reference numerals. In FIGS. 4(a) and 4(b), each region is shown as a rectangle for simplicity, but the shape of each part is not limited to this, and it shows that at least each part is disposed in this region.

[0032] The diffusion region of the floating diffusion portion 2 is constituted by the drain region of the transistor constituting the transfer portion 11, and the drain region of the transfer portion 11 is connected by wiring to the drain region of the capacitance switching portion 12.

[0033] On the first wiring layer, a connection wiring 405 for connecting to at least one of the signal lines 17 is provided. The connection wiring 405 extends in a direction orthogonal to the direction in which the signal line 17 of the second wiring layer described later extends in a plan view. Also, on the first wiring layer, a power supply wiring 16 for supplying a power supply voltage (VDD) which is a fixed potential is provided. The power supply wiring 16 is connected to the reset section 13 and the amplification section 14. Also, if necessary, a shield wiring 406 (third shield wiring) and a shield wiring 407 (fourth shield wiring) are provided. A fixed potential is supplied to the shield wiring 406 and the shield wiring 407. In the present embodiment, a ground voltage (GND) is supplied to the shield wiring 406 via a semiconductor layer, and a power supply voltage (VDD) is supplied to the shield wiring 407. The shield wiring 406 is connected to the semiconductor layer. The shield wiring 406 is connected to a shield wiring 404 (second shield wiring) of the second wiring layer described later. The shield wiring 407 is connected to a shield wiring 403 (first shield wiring) of the second wiring layer described later.

[0034] As shown in FIG. 4(a), in the pixels 201-1 and 201-2 of the first group row, the connection wirings 405-1 and 405-2 extend on the side (right side) opposite to the photoelectric conversion section 1 in a plan view. And, in the pixel 201-3 of the second group row, the connection wiring 405-3 extends on the side (left side) of the photoelectric conversion section 1 in a plan view.

[0035] Also, in the pixels 201-1 and 201-2 of the first group row, a part of the shield wirings 406-1 and 406-2 is disposed between the connection wiring 405 and the photoelectric conversion section 1. In the pixel 201-3 of the second group row, a part of the shield wiring 406-3 is disposed between the connection wiring 405-3 and the photoelectric conversion section of the adjacent pixel in a plan view.

[0036] The shield wiring 407 is disposed on the side opposite to the side on which the shield wiring 406 is disposed in the extending direction of the connection wiring 405 in a plan view.

[0037] The connection wiring 405, shield wiring 406, and shield wiring 407 of the first group row and the connection wiring 405, shield wiring 406, and shield wiring 407 of the second group row are arranged in line symmetry with the gate length direction of the amplification unit 14 as the axis. That is, the connection wirings 405-1 and 405-2 of the first group row and the connection wiring 405-3 of the second group row are arranged in line symmetry. Also, the shield wirings 406-1 and 406-2 of the first group row and the shield wiring 406-3 of the second group row are arranged in line symmetry. Furthermore, the shield wirings 407-1 and 407-2 of the first group row and the shield wiring 407-3 of the second group row are arranged in line symmetry.

[0038] FIG. 4(b) is a plan view of the pixel 201 in Embodiment 1. FIG. 4(b) shows the layout of the first wiring layer shown in FIG. 4(a) and the second wiring layer provided on the upper layer of the first wiring layer. In the second wiring layer, a first signal line group 171, a second signal line group 172, and a shield wiring 403 parallel to the signal lines are arranged. It is preferable that the layer in which the first signal line group 171 and the second signal line group 172 are arranged and the wiring layer in which the connection wiring 405 is arranged are arranged adjacent to each other. For example, when the connection wiring 405 is arranged in the first wiring layer, it is preferable that the layer in which each signal line group is arranged is the second wiring layer. Further, when the connection wiring 405 is arranged in the second wiring layer, it is preferable that the layer in which each signal line group is arranged is arranged in the first wiring layer or the third wiring layer. The shield wiring 403 is arranged between the first signal line group 171 of a certain pixel column and the second signal line group 172 of an adjacent pixel column in a plan view. That is, the first shield wiring is arranged between the first signal line group 171 and the second signal line group 172 including the third signal line connected to the third pixel. If necessary, a shield wiring 404 is arranged between the first signal line group 171 and the second signal line group 172 arranged in a certain pixel column in parallel with the signal lines. In the present embodiment, the first signal line group 171 and the second signal line group 172 include a portion arranged in the second wiring layer (the first layer), and in the second wiring layer, a shield wiring 404 is arranged between each signal line group. For example, between the first signal line group 171 and the second signal line group 172 including the second signal line connected to the second pixel, a shield wiring 404 extending in parallel with the signal lines and supplied with a fixed potential is arranged. A fixed potential is supplied to the shield wiring 403 and the shield wiring 404. In the present embodiment, a ground voltage (GND) is supplied to the shield wiring 404 via the shield wiring 406, and a power supply voltage (VDD) is supplied to the shield wiring 403 via the shield wiring 407. The number of contact plugs connected to the amplifier unit 14 and the power supply wiring 16 is shown as one in the figure, but it is preferably two or more. It is preferable that the total area in the lateral direction of the contact plugs connected to the amplifier unit 14 is larger than the total area of the contact plugs connected to the selection unit 15.For example, contact plugs connected to the amplification unit 14 are arranged side by side horizontally, and the number of contact plugs connected to the amplification unit 14 is made larger than the number of contact plugs connected to the selection unit 15. Thereby, the parasitic capacitance generated in the floating diffusion can be reduced.

[0039] FIG. 5(a) shows a cross-sectional view taken along line A-A′ of FIG. 4(b). The connection wiring 405-1 is connected to the source region 502 of the selection unit 15 provided in the semiconductor layer 501 via the contact 503. Also, the connection wiring 405-1 is arranged so as to overlap with the first signal line group 171 in a plan view, but does not overlap with the second signal line group 172 in a plan view. The shield wiring 406-1 is arranged so as to overlap at least partially with the shield wiring 404 in a plan view. If necessary, the shield wiring 406-1 may be connected to the shield wiring 404 via the via 504. The shield wiring 407-1 is arranged so as to overlap with the shield wiring 403 in a plan view. If necessary, the shield wiring 407-1 may be connected to the shield wiring 403 via the via 504.

[0040] FIG. 5(b) shows a cross-sectional view taken along line B-B′ of FIG. 4(b). The connection wiring 405-2 is connected to the source region 502 of the selection unit 15 provided in the semiconductor layer 501 via the contact 503. Also, the connection wiring 405-2 is arranged so as to overlap with the first signal line group 171 in a plan view, but does not overlap with the second signal line group 172 in a plan view. The shield wiring 406-2 is arranged so as to overlap at least partially with the shield wiring 404 in a plan view. If necessary, the shield wiring 406-2 may be connected to the shield wiring 404 via the via 504. The shield wiring 407-2 is arranged so as to overlap with the shield wiring 403 in a plan view. If necessary, the shield wiring 407-2 may be connected to the shield wiring 403 via the via 504.

[0041] FIG. 5(c) shows a cross-sectional view taken along line C-C′ of FIG. 4(b). The connection wiring 405-3 is connected to the source region 502 of the selection portion 15 provided in the semiconductor layer 501 via the contact 503. Also, the connection wiring 405-3 is arranged so as to overlap with the second signal line group 172 in a plan view, but does not overlap with the first signal line group 171 in a plan view. The shield wiring 406-3 is arranged so as to overlap at least partially with the shield wiring 404 in a plan view. If necessary, the shield wiring 406-3 may be connected to the shield wiring 404 via the via 504. The shield wiring 407-3 is arranged so as to overlap with the shield wiring 403 in a plan view. If necessary, the shield wiring 407-3 may be connected to the shield wiring 403 via the via 504.

[0042] In the present embodiment, the connection wirings 405-1 and 405-2 in the first group row and the second signal line group 172 are arranged so as not to overlap in a plan view. Also, the connection wiring 405-3 in the second group row and the first signal line group 171 are arranged so as not to overlap in a plan view. Thereby, the parasitic capacitance between the connection wirings 405-1 and 405-2 in the first group row and the second signal line group 172, and the parasitic capacitance between the connection wiring 405-3 in the second group row and the first signal line group 171 can be reduced. As a result, in a photoelectric conversion device having a mode of performing a plurality of different vertical scans simultaneously in parallel, crosstalk generated when reading in this mode can be reduced, and image quality can be improved.

[0043] (Embodiment 2) FIG. 6 is an equivalent circuit diagram of a pixel included in the photoelectric conversion region 102 in Embodiment 2. This embodiment is different from Embodiment 1 in that, in a plurality of pixel rows, in addition to the first group row and the second group row, a third group row is included, and the other structures are substantially the same as those of Embodiment 1. Hereinafter, the differences from Embodiment 1 will be described, and the description of the same structures as those of Embodiment 1 will be omitted as appropriate.

[0044] In FIG. 6, a configuration of four rows and two columns is given for simplicity, but the number of pixels is not limited to this. Also, four signal lines 17-1, 17-2, 17-3, and 17-4 are arranged for one column, but the number of signal lines is not limited to this.

[0045] The plurality of rows composed of a plurality of pixels 201 include a first group of rows, a second group of rows, and a third group of rows. The first group of rows, the second group of rows, and the third group of rows are different rows from each other. In FIG. 6, the rows in which pixels 201-1 and 201-2 are arranged are taken as the first group of rows, the row in which pixel 201-3 is arranged is taken as the second group of rows, and the row in which pixel 201-4 is arranged is taken as the third group of rows, but it is not necessarily limited to this. The pixels 201-1 and 201-2 in the first group of rows can be used, for example, to generate an image signal for recording. The pixel 201-3 in the second group of rows can be used, for example, to generate an image signal for display. The pixel 201-4 in the third group of rows can be non-readout, for example. The pixel 201-4 in the third group of rows is referred to as a pixel (the fourth pixel) arranged in the first column and in the third row different from the first and second rows. Note that the functions of each group of rows and the usage of the obtained image signals are not limited to the above examples.

[0046] FIG. 7(a) is a plan view of the pixel 201 in Embodiment 2. FIG. 7(a) shows a layout of a part of a diffusion region in a semiconductor layer, a gate of a transistor, and a first wiring layer provided above the semiconductor layer.

[0047] The first wiring layer is provided with a connection wiring 405 for connecting to at least one of the signal lines 17. The connection wiring 405 extends in a direction orthogonal to the signal line 17 of the second wiring layer, which will be described later, in a plan view. Also, the first wiring layer is provided with a power supply wiring 16 for supplying VDD, which is a fixed potential. The power supply wiring 16 is connected to the reset section 13 and the amplification section 14. Also, if necessary, a shield wiring 406 and a shield wiring 407 are provided.

[0048] The connection wiring 405-4, shield wirings 406-4 and 407-4 of the pixel 201-4 in the third group row are arranged so as to overlap in a plan view by translating the connection wiring 405-3, shield wirings 406-3 and 407-3 of the pixel 201-3 in the second group row in parallel.

[0049] Fig. 7(b) is a plan view of the pixel 201 in the second embodiment. Fig. 7(b) shows the layout of the first wiring layer shown in Fig. 7(a) and the second wiring layer provided on the upper layer of the first wiring layer. In the second wiring layer, a first signal line group 171, a second signal line group 172, a third signal line group 173, and a shield wiring 403 parallel to the signal lines are arranged. The third signal line group 173 includes a fourth signal line 17-4 connected to the fourth pixel.

[0050] In the mode of performing the first vertical scan and the second vertical scan simultaneously in parallel, when performing at least the first vertical scan and the second vertical scan, it is desirable to supply a fixed potential to the signal lines constituting the third signal line group 173. For this reason, the third signal line group 173 is preferably connected to a wiring or a diffusion region of a semiconductor layer so as to supply a fixed potential. Further, if necessary, a shield wiring 404 arranged between the first signal line group 171 and the second signal line group 172 is arranged in parallel with the signal lines.

[0051] In the present embodiment, the connection wirings 405-1 and 405-2 in the first group row and the second signal line group 172 are arranged so as not to overlap in a plan view. Also, the connection wiring 405-3 in the second group row and the first signal line group 171 are arranged so as not to overlap in a plan view. Thereby, the parasitic capacitances between the connection wirings 405-1 and 405-2 in the first group row and the second signal line group 172, and between the connection wiring 405-3 in the second group row and the first signal line group 171 can be reduced. As a result, crosstalk that occurs when reading in a mode of performing a plurality of different vertical scans simultaneously in parallel can be reduced, and the image quality can be improved.

[0052] According to this embodiment, in the mode of performing the first vertical scan and the second vertical scan simultaneously and in parallel, by supplying a fixed potential to the third signal line group 173, crosstalk caused by the potential of the third signal line group 173 can be reduced, and image quality can be improved.

[0053] (Embodiment 3) FIG. 8 is a plan view of the pixel 201 in Embodiment 3. This embodiment is different from Embodiment 2 in that the third signal line group 173 is arranged between the first signal line group 171 and the second signal line group 172, and the shield wiring 406 is not arranged in the pixels of the first group of rows. Otherwise, it has substantially the same structure as Embodiment 2. Hereinafter, the differences from Embodiment 2 will be described, and the description of the same structure as Embodiment 2 will be omitted as appropriate.

[0054] FIG. 8(a) is a plan view of the pixel 201 in Embodiment 3. FIG. 8(a) shows a layout of a part of the diffusion region in the semiconductor layer, the gate of the transistor, and the first wiring layer provided above the semiconductor layer. The first wiring layer is provided with a connection wiring 405 arranged to be orthogonal to either the first signal line group 171 or the second signal line group 172 in a plan view and connected to at least one of the signal lines 17. Also, if necessary, a shield wiring 406 and a shield wiring 407 are provided.

[0055] In the pixels 201-1 and 201-2 in the first group of rows, the shield wirings 406-1 and 406-2 are not arranged. And in the pixel 201-3 in the second group of rows, the shield wiring 406-3 is arranged, and in the pixel 201-4 in the third group of rows, the shield wiring 406-4 is arranged.

[0056] FIG. 8(b) is a plan view of pixel 201 in Embodiment 3. FIG. 8(b) shows the layout of the first wiring layer shown in FIG. 8(a) and the second wiring layer provided on the upper layer of the first wiring layer. In the second wiring layer, a first signal line group 171, a second signal line group 172, a third signal line group 173, and a shield wiring 403 parallel to the signal lines are arranged. The third signal line group 173 is arranged between the first signal line group 171 and the second signal line group 172. In the mode of performing the first vertical scan and the second vertical scan simultaneously in parallel, it is desirable to supply a fixed potential to the third signal line group 173 at least while performing the first vertical scan and the second vertical scan. If necessary, a shield wiring 404 is arranged between the first signal line group 171 and the second signal line group 172 in parallel with the signal lines. In Embodiment 2, two shield wirings 404 are arranged between the first signal line group 171 and the second signal line group 172, but in this embodiment, one shield wiring 404 is arranged. According to this embodiment, the number of wirings can be reduced and the wiring area can be reduced, facilitating the miniaturization of the pixel.

[0057] FIG. 9(a) shows a cross-sectional view taken along line D-D′ of FIG. 8(b). The connection wiring 405-1 is connected to the source region 502 of the selection portion 15 arranged in the semiconductor layer 501 through the contact 503. Also, the connection wiring 405-1 is arranged so as to overlap the first signal line group 171 in plan view, but does not overlap the second signal line group 172 in plan view. The shield wiring 403 is arranged so as to overlap the shield wiring 407-1 in plan view. If necessary, the shield wiring 403 may be connected to the shield wiring 407-1 through the via 504.

[0058] FIG. 9(b) shows a cross-sectional view taken along line E-E′ of FIG. 8(b). The connection wiring 405-3 is connected to the source region 502 of the selection section 15 disposed in the semiconductor layer 501 via the contact 503. Also, the connection wiring 405-3 is arranged so as to overlap with the second signal line group 172 in a plan view, but does not overlap with the first signal line group 171 in a plan view. The shield wiring 404 is arranged so as to overlap at least partially with the shield wiring 406-3 in a plan view. If necessary, the shield wiring 404 may be connected to the shield wiring 406-3 via the via 504. The shield wiring 407-3 is arranged so as to overlap with the shield wiring 403 in a plan view. If necessary, the shield wiring 407-3 may be connected to the shield wiring 403 via the via 504.

[0059] In the present embodiment, the connection wirings 405-1 and 405-2 in the first group row and the second signal line group 172 are arranged so as not to overlap in a plan view. Also, the connection wiring 405-3 in the second group row and the first signal line group 171 are arranged so as not to overlap in a plan view. Thereby, the parasitic capacitance between the connection wirings 405-1 and 405-2 in the first group row and the second signal line group 172, and the parasitic capacitance between the connection wiring 405-3 in the second group row and the first signal line group 171 can be reduced. As a result, crosstalk that occurs when reading in a mode where a plurality of different vertical scans are performed simultaneously in parallel can be reduced, and the image quality can be improved.

[0060] Also, in the present embodiment, in a mode where the first vertical scan and the second vertical scan are performed simultaneously in parallel, by supplying a fixed potential to the third signal line group 173, crosstalk caused by the potential of the third signal line group 173 can be reduced, and the image quality can be improved.

[0061] Furthermore, compared with Embodiment 2, the number of the shield wirings 404 can be reduced, so that the area of the shield wiring 404 can be reduced and miniaturization is possible.

[0062] (Embodiment 4) The photoelectric conversion system according to this embodiment will be described with reference to FIG. 10. FIG. 10 is a block diagram showing the schematic configuration of the photoelectric conversion system according to this embodiment.

[0063] The photoelectric conversion devices (imaging devices) described in Embodiments 1 to 3 are applicable to various photoelectric conversion systems. Examples of applicable photoelectric conversion systems include digital still cameras, digital camcorders, surveillance cameras, copiers, fax machines, mobile phones, in-vehicle cameras, observation satellites, and the like. Further, a camera module including an optical system such as a lens and an imaging device is also included in the photoelectric conversion system. FIG. 10 illustrates a block diagram of a digital still camera as an example of these.

[0064] The photoelectric conversion system illustrated in FIG. 10 includes an imaging device 1004 which is an example of a photoelectric conversion device, and a lens 1002 that forms an optical image of a subject on the imaging device 1004. Further, the imaging device 1004 has a diaphragm 1003 for variably controlling the amount of light passing through the lens 1002, and a barrier 1001 for protecting the lens 1002. The lens 1002 and the diaphragm 1003 are an optical system that condenses light on the imaging device 1004. The imaging device 1004 is the photoelectric conversion device (imaging device) described in Embodiments 1 to 3, and converts the optical image formed by the lens 1002 into an electrical signal.

[0065] The photoelectric conversion system also has a signal processing unit 1007 which is an image generation unit that generates an image by processing the output signal output from the imaging device 1004. The signal processing unit 1007 performs operations of outputting image data by performing various corrections and compressions as necessary. The signal processing unit 1007 may be formed on the semiconductor substrate on which the imaging device 1004 is provided, or may be formed on a semiconductor substrate different from the imaging device 1004. Further, the imaging device 1004 and the signal processing unit 1007 may be formed on the same semiconductor substrate.

[0066] The photoelectric conversion system further includes a memory unit 1010 for temporarily storing image data, and an external interface unit (external I / F unit) 1013 for communicating with an external computer or the like. The photoelectric conversion system further includes a recording medium 1012 such as a semiconductor memory for recording or reading imaging data, and a recording medium control interface unit (recording medium control I / F unit) 1011 for recording or reading to / from the recording medium 1012. Note that the recording medium 1012 may be built into the photoelectric conversion system or may be detachable.

[0067] The photoelectric conversion system further includes an overall control and arithmetic unit 1009 for performing various operations and controlling the entire digital still camera, and a timing generation unit 1008 for outputting various timing signals to the imaging device 1004 and the signal processing unit 1007. Here, the timing signals and the like may be input from the outside, and the photoelectric conversion system may have at least the imaging device 1004 and the signal processing unit 1007 that processes the output signal output from the imaging device 1004.

[0068] The imaging device 1004 outputs an imaging signal to the signal processing unit 1007. The signal processing unit 1007 performs predetermined signal processing on the imaging signal output from the imaging device 1004 and outputs image data. The signal processing unit 1007 generates an image using the imaging signal.

[0069] As described above, according to this embodiment, a photoelectric conversion system to which the photoelectric conversion device (imaging device) of any of the above embodiments is applied can be realized.

[0070] (Embodiment 5) The photoelectric conversion system and the moving body of this embodiment will be described with reference to FIG. 11. FIG. 11 is a diagram showing the configuration of the photoelectric conversion system and the moving body of this embodiment.

[0071] FIG. 11(a) shows an example of a photoelectric conversion system related to an in-vehicle camera. The photoelectric conversion system 300 includes an imaging device 370. The imaging device 370 is the photoelectric conversion device (imaging device) described in Embodiments 1 to 3. The photoelectric conversion system 300 includes an image processing unit 313 that performs image processing on a plurality of pieces of image data acquired by the imaging device 370, and a parallax acquisition unit 314 that calculates a parallax (phase difference of a parallax image) from the plurality of pieces of image data acquired by the photoelectric conversion system 300. Further, the photoelectric conversion system 300 includes a distance acquisition unit 316 that calculates a distance to an object based on the calculated parallax, and a collision determination unit 318 that determines whether there is a possibility of collision based on the calculated distance. Here, the parallax acquisition unit 314 and the distance acquisition unit 316 are examples of distance information acquisition means for acquiring distance information to an object. That is, the distance information is information related to parallax, defocus amount, distance to an object, and the like. The collision determination unit 318 may determine the possibility of collision using any of these distance information. The distance information acquisition means may be realized by dedicatedly designed hardware, or may be realized by a software module. Further, it may be realized by an FPGA (Field Programmable Gate Array), an ASIC (Application Specific Integrated Circuit), or the like, or may be realized by a combination of these.

[0072] The photoelectric conversion system 300 is connected to a vehicle information acquisition device 325 and can acquire vehicle information such as vehicle speed, yaw rate, and steering angle. Further, the photoelectric conversion system 300 is connected to a control ECU 330, which is a control device that outputs a control signal for generating a braking force for the vehicle based on the determination result by the collision determination unit 318. Further, the photoelectric conversion system 300 is also connected to an alarm device 380 that issues an alarm to the driver based on the determination result by the collision determination unit 318. For example, when the determination result of the collision determination unit 318 indicates a high possibility of collision, the control ECU 330 performs vehicle control to avoid the collision and reduce the damage, such as applying the brakes, returning the accelerator, and suppressing the engine output. The alarm device 380 warns the user by sounding an alarm such as a sound, displaying alarm information on the screen of a car navigation system, or applying vibration to the seat belt or steering wheel.

[0073] In this embodiment, the photoelectric conversion system 300 images the surroundings of the vehicle, for example, the front or the rear. FIG. 11(b) shows the photoelectric conversion system when imaging the front of the vehicle (imaging range 350). The vehicle information acquisition device 325 sends an instruction to the photoelectric conversion system 300 or the imaging device 370. With such a configuration, the ranging accuracy can be further improved.

[0074] In the above, an example of controlling so as not to collide with other vehicles has been described, but it is also applicable to controls such as automatic driving following other vehicles and automatic driving so as not to deviate from the lane. Further, the photoelectric conversion system is not limited to vehicles such as the host vehicle, and can be applied to moving bodies (moving devices) such as ships, airplanes, or industrial robots. This moving body mainly includes a driving force generation unit that generates a driving force used for the movement of the moving body, and one or both of rotating bodies mainly used for the movement of the moving body. The driving force generation unit can be an engine, a motor, or the like. The rotating body can be a tire, a wheel, a screw of a ship, a propeller of an aircraft, or the like. In addition, it can be applied not only to moving bodies but also to devices that widely use object recognition, such as an advanced road traffic system (ITS).

[0075] (Embodiment 6) The photoelectric conversion system of this embodiment will be described with reference to FIG. 12. FIG. 12 is a block diagram showing a configuration example of a distance image sensor which is the photoelectric conversion system of this embodiment.

[0076] As shown in FIG. 12, the distance image sensor 1401 includes an optical system 1402, a photoelectric conversion device 1403, an image processing circuit 1404, a monitor 1405, and a memory 1406. Then, the distance image sensor 1401 can obtain a distance image corresponding to the distance to the subject by receiving the light (modulated light or pulsed light) that is projected from the light source device 1411 toward the subject and reflected by the surface of the subject.

[0077] The optical system 1402 is configured to have one or a plurality of lenses, guides the image light (incident light) from the subject to the photoelectric conversion device 1403, and forms an image on the light receiving surface (sensor unit) of the photoelectric conversion device 1403.

[0078] As the photoelectric conversion device 1403, the photoelectric conversion devices described in Embodiments 1 to 3 are applicable, and a distance signal indicating the distance obtained from the received light signal output from the photoelectric conversion device 1403 is supplied to the image processing circuit 1404.

[0079] The image processing circuit 1404 performs image processing for constructing a distance image based on the distance signal supplied from the photoelectric conversion device 1403. Then, the distance image (image data) obtained by the image processing is supplied to the monitor 1405 for display or supplied to the memory 1406 for storage (recording).

[0080] In the distance image sensor 1401 configured as described above, by applying the above-described photoelectric conversion device, for example, a more accurate distance image can be obtained as the characteristics of the pixels are improved.

[0081] (Embodiment 7) FIG. 13 is a block diagram of the X-ray CT apparatus according to the present embodiment. The photoelectric conversion device described in Embodiments 1 to 3 is applicable to the detector of the X-ray CT apparatus. The X-ray CT apparatus 30 in the present embodiment includes an X-ray generation unit 310, a wedge 311, a collimator 312, an X-ray detection unit 320, a top plate 330, a rotating frame 340, and a high voltage generator 360. Further, the X-ray CT apparatus 30 includes a data acquisition device (DAS: Data Acquisition System) 351, a signal processing unit 352, a display unit 353, and a control unit 354.

[0082] The X-ray generation unit 310 is composed of, for example, a vacuum tube that generates X-rays. A high voltage and a filament current from the high voltage generator 360 are supplied to the vacuum tube of the X-ray generation unit 310. X-rays are generated by irradiating thermoelectrons from the cathode (filament) toward the anode (target).

[0083] The wedge 311 is a filter that adjusts the amount of X-rays irradiated from the X-ray generation unit 310. The wedge 311 attenuates the X-ray dose so that the X-rays irradiated from the X-ray generation unit 310 to the subject have a predetermined distribution. The collimator 312 is composed of a lead plate or the like that narrows down the irradiation range of the X-rays transmitted through the wedge 311. The X-rays generated by the X-ray generation unit 310 are shaped into a cone beam shape through the collimator 312 and irradiated onto the subject on the top plate 330.

[0084] The X-ray detection unit 320 is configured using the photoelectric conversion device described in Embodiments 1 to 3 above. The X-ray detection unit 320 detects the X-rays that have passed through the subject from the X-ray generation unit 310 and outputs a signal corresponding to the X-ray dose to the DAS 351.

[0085] The rotating frame 340 has an annular shape and is configured to be rotatable. Inside the rotating frame 340, the X-ray generation unit 310 (wedge 311, collimator 312) and the X-ray detection unit 320 are arranged to face each other. The X-ray generation unit 310 and the X-ray detection unit 320 can rotate together with the rotating frame 340.

[0086] The high-voltage generator 360 includes a boost circuit and outputs high voltage to the X-ray generation unit 310. The DAS 351 includes an amplifier circuit and an A / D conversion circuit, and outputs the signal from the X-ray detection unit 320 to the signal processing unit 352 as digital data.

[0087] The signal processing unit 352 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory), and is capable of executing image processing and the like on the digital data. The display unit 353 includes a flat panel display device and the like, and is capable of displaying X-ray images. The control unit 354 includes a CPU, a ROM, a RAM, and the like, and controls the operation of the entire X-ray CT apparatus 30.

[0088] (Embodiment 8) The photoelectric conversion system of the present embodiment will be described with reference to FIG. 14. FIG. 14 is a diagram showing an example of a schematic configuration of an endoscopic surgery system which is the photoelectric conversion system of the present embodiment.

[0089] In FIG. 14, a state where a surgeon (doctor) 1131 is performing surgery on a patient 1132 on a patient bed 1133 using an endoscopic surgery system 1150 is illustrated. As shown in the figure, the endoscopic surgery system 1150 includes an endoscope 1100, a surgical instrument 1110, and a cart 1134 on which various devices for endoscopic surgery are mounted.

[0090] The endoscope 1100 includes a lens barrel 1101 whose tip region of a predetermined length is inserted into the body cavity of the patient 1132, and a camera head 1102 connected to the proximal end of the lens barrel 1101. In the illustrated example, an endoscope 1100 configured as a so-called rigid endoscope having a rigid lens barrel 1101 is shown, but the endoscope 1100 may be configured as a so-called flexible endoscope having a flexible lens barrel.

[0091] An opening into which an objective lens is fitted is provided at the tip of the lens barrel 1101. A light source device 1203 is connected to the endoscope 1100, and the light generated by the light source device 1203 is guided by a light guide extending inside the lens barrel 1101 to the tip of the lens barrel, and is irradiated through the objective lens toward an observation target in the body cavity of the patient 1132. Note that the endoscope 1100 may be a forward-viewing endoscope, or may be an oblique-viewing endoscope or a side-viewing endoscope.

[0092] An optical system and a photoelectric conversion device are provided inside the camera head 1102, and the reflected light (observation light) from the observation target is condensed by the optical system onto the photoelectric conversion device. The observation light is photoelectrically converted by the photoelectric conversion device, and an electrical signal corresponding to the observation light, that is, an image signal corresponding to the observation image, is generated. As the photoelectric conversion device, the photoelectric conversion device (imaging device) described in each of the above embodiments can be used. The image signal is transmitted as RAW data to a camera control unit (CCU) 1135.

[0093] The CCU 1135 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 1100 and the display device 1136. Further, the CCU 1135 receives an image signal from the camera head 1102, and performs various image processes for displaying an image based on the image signal, such as development processing (demosaicing processing), on the image signal.

[0094] The display device 1136 displays an image based on the image signal that has been subjected to image processing by the CCU 1135 under the control of the CCU 1135.

[0095] The light source device 1203 is composed of a light source such as an LED (Light Emitting Diode), and supplies irradiation light for photographing the surgical site or the like to the endoscope 1100.

[0096] The input device 1137 is an input interface for the endoscopic surgery system 1150. The user can input various information and give instructions to the endoscopic surgery system 1150 via the input device 1137.

[0097] The treatment instrument control device 1138 controls the driving of the energy treatment instrument 1112 for tissue cauterization, incision, or blood vessel sealing, etc.

[0098] The light source device 1203 that supplies irradiation light when photographing the surgical site with the endoscope 1100 can be composed of, for example, an LED, a laser light source, or a white light source composed of a combination of these. When a white light source is composed of a combination of RGB laser light sources, since the output intensity and output timing of each color (each wavelength) can be controlled with high precision, the white balance of the captured image can be adjusted in the light source device 1203. Also, in this case, the laser light from each of the RGB laser light sources is irradiated to the observation target in a time-division manner, and by controlling the driving of the imaging element of the camera head 1102 in synchronization with the irradiation timing, it is also possible to capture images corresponding to each of RGB in a time-division manner. According to this method, a color image can be obtained without providing a color filter on the imaging element.

[0099] Also, the driving of the light source device 1203 may be controlled so that the intensity of the output light is changed every predetermined time. By controlling the driving of the imaging element of the camera head 1102 in synchronization with the timing of the change in the intensity of the light and acquiring images in a time-division manner and synthesizing the images, it is possible to generate a so-called high-dynamic-range image without black crushing and white blooming.

[0100] Further, the light source device 1203 may be configured to supply light in a predetermined wavelength band corresponding to special light observation. In special light observation, for example, the wavelength dependence of light absorption in body tissue is utilized. Specifically, by irradiating light with a narrower band than the irradiation light (i.e., white light) during normal observation, a predetermined tissue such as blood vessels in the mucosal surface layer is photographed with high contrast. Alternatively, in special light observation, fluorescence observation may be performed to obtain an image by fluorescence generated by irradiating excitation light. In fluorescence observation, excitation light is irradiated on body tissue to observe the fluorescence from the body tissue, or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and excitation light corresponding to the fluorescence wavelength of the reagent is irradiated on the body tissue to obtain a fluorescence image, etc. The light source device 1203 can be configured to supply such narrow-band light and / or excitation light corresponding to special light observation.

[0101] (Embodiment 9) The photoelectric conversion system of this embodiment will be described with reference to FIGS. 15(a) and (b). FIG. 15(a) illustrates glasses 1600 (smart glasses) which are the photoelectric conversion system of this embodiment. The glasses 1600 have a photoelectric conversion device 1602. The photoelectric conversion device 1602 is the photoelectric conversion device (imaging device) described in each of the above embodiments. Also, a display device including a light-emitting device such as an OLED or an LED may be provided on the back side of the lens 1601. The photoelectric conversion device 1602 may be one or a plurality. Also, a plurality of types of photoelectric conversion devices may be combined and used. The arrangement position of the photoelectric conversion device 1602 is not limited to FIG. 15(a).

[0102] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power supply that supplies power to the photoelectric conversion device 1602 and the above display device. Also, the control device 1603 controls the operations of the photoelectric conversion device 1602 and the display device. An optical system for condensing light onto the photoelectric conversion device 1602 is formed in the lens 1601.

[0103] FIG. 15(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, and a photoelectric conversion device corresponding to the photoelectric conversion device 1602 and a display device are mounted on the control device 1612. An optical system for projecting light emission from the photoelectric conversion device and the display device is formed in the lens 1611, and an image is projected onto the lens 1611. The control device 1612 functions as a power source for supplying power to the photoelectric conversion device and the display device, and controls the operations of the photoelectric conversion device and the display device. The control device may have a line-of-sight detection unit that detects the wearer's line of sight. Infrared rays may be used for line-of-sight detection. The infrared light emitting unit emits infrared light to the eyeball of the user who is gazing at the display image. An imaging unit having a light receiving element detects the reflected light of the emitted infrared light from the eyeball, thereby obtaining an imaging image of the eyeball. By having a reducing means for reducing the light from the infrared light emitting unit to the display unit in a plan view, a decrease in image quality is reduced.

[0104] The user's line of sight with respect to the display image is detected from the imaging image of the eyeball obtained by imaging infrared light. Any known method can be applied to the line-of-sight detection using the imaging image of the eyeball. As an example, a line-of-sight detection method based on the Purkinje image by reflection of irradiation light on the cornea can be used.

[0105] More specifically, a line-of-sight detection process based on the pupil corneal reflection method is performed. Using the pupil corneal reflection method, a line-of-sight vector representing the orientation (rotation angle) of the eyeball is calculated based on the image of the pupil and the Purkinje image included in the imaging image of the eyeball, thereby detecting the user's line of sight.

[0106] The display device of the present embodiment has a photoelectric conversion device having a light receiving element, and may control the display image of the display device based on the user's line-of-sight information from the photoelectric conversion device.

[0107] Specifically, the display device determines a first viewing area that the user gazes at and a second viewing area other than the first viewing area based on the line-of-sight information. The first viewing area and the second viewing area may be determined by the control device of the display device, or the display device may receive those determined by an external control device. In the display area of the display device, the display resolution of the first viewing area may be controlled to be higher than that of the second viewing area. That is, the resolution of the second viewing area may be made lower than that of the first viewing area.

[0108] Further, the display area has a first display area and a second display area different from the first display area, and based on the line-of-sight information, an area with a higher priority may be determined from the first display area and the second display area. The first viewing area and the second viewing area may be determined by the control device of the display device, or the display device may receive those determined by an external control device. The resolution of the area with a higher priority may be controlled to be higher than that of the area other than the area with a higher priority. That is, the resolution of the area with a relatively lower priority may be made lower.

[0109] Note that AI may be used to determine the first viewing area or the area with a higher priority. AI may be a model configured to estimate the angle of the line of sight and the distance to the object at the tip of the line of sight from the eye image using the eye image and the direction in which the eye of the image is actually looking as teacher data. The AI program may be possessed by the display device, the photoelectric conversion device, or an external device. When possessed by an external device, it is transmitted to the display device via communication.

[0110] When performing display control based on visual recognition detection, it is preferably applicable to smart glasses further having a photoelectric conversion device for imaging the outside. The smart glasses can display the imaged external information in real time.

[0111] (Embodiment 10) FIG. 16 is a cross-sectional view showing the internal configuration of a document reading apparatus which is an image reading apparatus. Below the document reading apparatus 100, a known image forming unit 110 is provided, and the document reading apparatus 100 and the image forming unit 110 constitute an image forming apparatus. As an example of the known image forming unit 110, there is an electrophotographic image forming unit. The electrophotographic image forming unit forms an image by developing an electrostatic latent image formed on a photosensitive drum into a toner image and transferring the toner image onto a recording medium such as paper. The image forming apparatus in the present embodiment can form an image read by the document reading apparatus 100 on a recording medium by the image forming unit 110.

[0112] On the document table glass 140, a sheet (hereinafter referred to as a document) 120 on which an image is formed as an object to be read is placed. When a user presses a read start button (not shown), the reading unit 130 moves in the direction of the arrow in the figure and reads the document 120.

[0113] When the reading unit 130 moves in the direction of the arrow, white LEDs 109a and 109b as light emitting units arranged at the upper part of the reading unit 130 emit light to irradiate the document 120 with light.

[0114] The reading unit 130 is a reduced optical system reading unit including LEDs 109a and 109b, a plurality of folding mirrors 105a, 105b, 105c, 105d, 105e, a condenser lens 108, and a photoelectric conversion device 107. The light irradiated on the document 120 by the LEDs 109a and 109b is reflected by the document 120. The light reflected from the document 120 is reflected by the folding mirrors 105a, 105b, 105c, 105d, 105e and then condensed by the condenser lens 108 onto the photoelectric conversion device 107 which is a line sensor. The photoelectric conversion device 107 includes a light receiving element, and the light receiving element photoelectrically converts the incident light and outputs an electrical signal corresponding to the amount of the incident light.

[0115] FIG. 17 is a block diagram of the document reading apparatus 100 in the present embodiment.

[0116] The CPU 401 reads the control program stored in the non-volatile memory 402 and controls the entire document reading apparatus 100. The operation unit 903 is a user interface through which a user inputs settings for copy modes such as color copy, monochrome copy, duplex copy, and an instruction to start copying. The motor 904 moves the reading unit 130 in the sub-scanning direction. The motor driver 905 receives a timing signal from the CPU 401 and supplies an exciting current for rotationally controlling the motor 904.

[0117] The LED driver 906 receives a timing signal from the CPU 401 and supplies a current for causing the white LEDs 109a and 109b to emit light.

[0118] The IC 407 performs analog processing such as sample and hold processing, offset processing, and gain processing on the analog voltage signal output from the photoelectric conversion device 107, and converts the analog-processed voltage signal into digital data (hereinafter, luminance data). The IC 407 is generally called an AFE (Analog Front End). In this embodiment, this digital data is 8-bit (0 to 255) data.

[0119] The operation of the image processing unit 408 will be described. The read data output from the AFE 407 is stored in the line memory 409. The line memory 409 holds the read data read by each line of the light receiving element row lines 1, 2, and 3 in the photoelectric conversion device 107.

[0120] Therefore, the data sorting unit 410 rearranges the read data obtained from Line 1, Line 2, and Line 3 to generate image data for each color of RGB. For example, the processing of R will be described. The data sorting unit 410 picks up the R data portion from the image data of Line 1, Line 2, and Line 3 stored in the line memory 409. Since the read data of Line 1, Line 2, and Line 3 obtained at a certain timing is shifted in the sub-scanning direction, a process is performed to eliminate this shift. That is, for the data obtained at a certain timing, the read data of Line 2 is shifted by 2 pixels and the read data of Line 3 is shifted by 4 pixels in the sub-scanning direction. By performing such a process, the shift in the sub-scanning direction is eliminated. By performing this process for each color, the read data read by the photoelectric conversion device 107 has no shift in the sub-scanning direction and becomes the read data corresponding to the image of the document 120.

[0121] The image processing circuit 411 performs image processing such as shading correction processing and filter processing on the read data rearranged by the data sorting unit 410. Note that the settings of filters and the like required for performing image processing are set in the registers in the image processing circuit 411 by the CPU 401 when the power is turned on.

[0122] The parallel / serial conversion circuit 412 converts the read data after various image processings output as parallel data from the image processing circuit 411 into serial data. The read data converted into serial data is transmitted to the image output controller 413.

[0123] FIG. 18 is a control flowchart of the CPU 401 in the present embodiment.

[0124] When the user turns on the power of the document reading device 100, the CPU 401 performs initial operations such as the startup process of the document reading device control program and the light amount adjustment of the LED light source (Startup of the document reading device 100: S500).

[0125] Next, the CPU 401 sets data corresponding to the image processing settings in the registers in the image processing circuit 411 (S501).

[0126] Then, the CPU 401 waits for a read job start command from the operation unit 903 (S502).

[0127] When a read job start command is input by the user (Y in S502), the CPU 401 causes the white LEDs 109a and 109b, which are light sources, to emit light (S503). The CPU 401 outputs a control signal to the LED driver 906, and the LED driver 906 supplies current to the LEDs 109a and 109b to cause them to emit light.

[0128] Then, the CPU 401 outputs a control signal to the motor driver 905, and the motor driver 905 drives the motor 904 to move the reading unit 130 in the sub-scanning direction (S504).

[0129] When the reading is completed (Y in S505), the CPU 401 turns off the LEDs 109a and 109b and controls the document reading apparatus to enter the job waiting state.

[0130] In this specification, expressions such as "A or B", "at least one of A and B", "at least one of A or / and B", and "one or more of A or / and B" may be used. In this case, unless otherwise explicitly defined, it can include all possible combinations of the listed items. That is, the above expressions are understood to disclose all cases including at least one A, including at least one B, and including both at least one A and at least one B. This also applies equally to combinations of three or more elements.

[0131] The disclosure of this specification includes the complement of the concepts described in this specification. That is, for example, if this specification describes that "A is B" (A = B), even if the description that "A is not B" (A ≠ B) is omitted, this specification shall be regarded as disclosing or suggesting that "A is not B". This is because when the description that "A is B" is provided, it is premised that the case where "A is not B" is considered.

[0132] As described above, the embodiments described can be appropriately modified without departing from the technical idea. Note that the disclosure of this specification includes not only what is described in this specification, but also all matters that can be grasped from this specification and the drawings attached hereto. Also, the disclosure of this specification includes the complement of the concepts described in this specification. That is, for example, if this specification describes that "A is larger than B", even if the description that "A is not larger than B" is omitted, it can be said that this specification discloses that "A is not larger than B". This is because when the description that "A is larger than B" is provided, it is premised that the case where "A is not larger than B" is considered.

[0133] The disclosure of this embodiment includes the following configuration.

[0134] (Configuration 1) A plurality of pixels arranged over a plurality of rows and a plurality of columns, And a plurality of signal lines, Each of the plurality of pixels includes a photoelectric conversion unit and a selection unit that controls the output of a pixel signal based on the charge generated by the photoelectric conversion unit to the signal lines, The plurality of pixels include a first pixel arranged in the first column and the first row, a second pixel arranged in the first column and a second row different from the first row, and a third pixel arranged in the second column adjacent to the first column and the second row. A first signal line group composed of the above signal lines with 1 or more and including a first signal line connected to the first pixel, a second signal line group composed of the above signal lines with 1 or more and including a second signal line connected to the second pixel, and a second signal line group composed of the above signal lines with 1 or more and including a third signal line connected to the third pixel, wherein the plurality of signal lines include including a first connection wiring connected to the selection portion of the first pixel and the first signal line A first shield wiring to which a fixed potential is supplied is disposed between the first signal line group and the second signal line group including the third signal line In a plan view seen from a direction orthogonal to the plane on which the plurality of pixels are arranged, the first connection wiring overlaps the first signal line group and does not overlap the second signal line group including the second signal line. A photoelectric conversion device characterized by this

[0135] (Configuration 2) including a second connection wiring connecting the selection portion of the second pixel and the second signal line In the plan view, the second connection wiring overlaps the second signal line group including the second signal line and does not overlap the first signal line group. The photoelectric conversion device according to Configuration 1, characterized by this

[0136] (Configuration 3) The first connection wiring and the second connection wiring are disposed in a layer between the wiring layer in which the plurality of signal lines are disposed and the semiconductor layer in which the photoelectric conversion portion is disposed The layer in which the first connection wiring and the second connection wiring are disposed is a wiring layer adjacent to the wiring layer in which the plurality of signal lines are disposed. The photoelectric conversion device according to Configuration 2, characterized by this

[0137] (Configuration 4) The number of signal lines included in the first signal line group is larger than the number of signal lines included in the second signal line group including the second signal line. The photoelectric conversion device according to any one of Configurations 1 to 3, characterized by this

[0138] (Configuration 5) including a portion where the first signal line group and the second signal line group are arranged in the first layer, In the first layer, a second shield wiring to which a fixed potential is supplied is arranged between the first signal line group and the second signal line group including the second signal line, and the photoelectric conversion device according to any one of Configurations 1 to 4 is characterized.

[0139] (Configuration 6) In the same layer as the first connection wiring, a third connection wiring that connects the selection portion of the third pixel and the third signal line is arranged, A third shield wiring to which a fixed potential is supplied is arranged between the second connection wiring and the third connection wiring, and the photoelectric conversion device according to Configuration 3 is characterized.

[0140] (Configuration 7) In the plan view, at least a part of the second shield wiring and the third shield wiring overlap, and the photoelectric conversion device according to Configuration 6 is characterized.

[0141] (Configuration 8) A fourth shield wiring to which a fixed potential is supplied is arranged between the second connection wiring and the third connection wiring, and the photoelectric conversion device according to Configuration 6 is characterized.

[0142] (Configuration 9) In the plan view, at least a part of the first shield wiring and the fourth shield wiring overlap, and the photoelectric conversion device according to Configuration 8 is characterized.

[0143] (Configuration 10) In a predetermined mode, the signal lines constituting the first signal line group are used for reading an image signal for moving image display, and the signal lines constituting the second signal line group including the second signal line are used for reading an image signal for sensing, and the photoelectric conversion device according to any one of Configurations 1 to 9 is characterized.

[0144] (Configuration 11) The plurality of pixels include a fourth pixel arranged in the third row that is different from the first row and the second row in the first column, The plurality of signal lines include a third signal line group composed of the above signal lines with a number of 1 or more and including a fourth signal line connected to the fourth pixel. In the predetermined mode, the signal lines constituting the third signal line group are not used for reading an image signal for video display nor for reading an image signal for sensing, according to the photoelectric conversion device of configuration 10.

[0145] (Configuration 12) In the predetermined mode, a fixed potential is supplied to the third signal line group, according to the photoelectric conversion device of configuration 11.

[0146] (Configuration 13) The signal lines constituting the third signal line group are arranged between the first signal line group and the second signal line group connected to the second pixel, according to the photoelectric conversion device of configuration 11 or configuration 12.

[0147] (Configuration 14) In the plan view, a source region of the transistor constituting the selection unit is arranged between the first signal line group and the second signal line group including the second signal line, according to the photoelectric conversion device of any one of configurations 1 to 13.

[0148] (Configuration 15) The photoelectric conversion unit is arranged in a semiconductor layer. Light is irradiated from a side opposite to the side where the signal lines and the first connection wiring are arranged, according to the photoelectric conversion device of any one of configurations 1 to 14.

[0149] (Configuration 16) The plurality of pixels are arranged in a first semiconductor layer. A scanning circuit for controlling driving of the plurality of pixels is arranged in a second semiconductor layer. The first semiconductor layer and the second semiconductor layer are laminated, according to the photoelectric conversion device of any one of configurations 1 to 15.

[0150] (Configuration 17) A photoelectric conversion device according to any one of Configurations 1 to 16, and a signal processing unit that generates an image using a signal output from the photoelectric conversion device, characterized by a photoelectric conversion system.

[0151] (Configuration 18) A moving body including a photoelectric conversion device according to any one of Configurations 1 to 16, characterized by having a control unit that controls the movement of the moving body using a signal output from the photoelectric conversion device.

Explanation of Signs

[0152] 15 Selection unit 17 Signal line 201 Pixel 171 First signal line group 172 Second signal line group 403 Shield wiring (first shield wiring) 405 Connection wiring

Claims

1. a plurality of pixels arranged across a plurality of rows and a plurality of columns; a plurality of signal lines; and having, each of the plurality of pixels includes a photoelectric conversion unit and a selection unit that controls the output of a pixel signal based on the charge generated in the photoelectric conversion unit to the signal line, the plurality of pixels includes a first pixel arranged in the first column and the first row, a second pixel arranged in the first column and a second row different from the first row, and a third pixel arranged in the second column adjacent to the first column and the second row, a first signal line group composed of one or more of the signal lines and including a first signal line connected to the first pixel, a second signal line group composed of one or more of the signal lines and including a second signal line connected to the second pixel, and a second signal line group composed of one or more of the signal lines and including a third signal line connected to the third pixel, the plurality of signal lines including, including a first connection wiring connected to the selection unit of the first pixel and the first signal line, a first shield wiring to which a fixed potential is supplied is arranged between the first signal line group and the second signal line group including the third signal line, in a plan view seen from a direction orthogonal to the plane on which the plurality of pixels are arranged, the first connection wiring overlaps the first signal line group and does not overlap the second signal line group including the second signal line. A photoelectric conversion device characterized by this.

2. including a second connection wiring connecting the selection unit of the second pixel and the second signal line, In the plan view, the second connection wiring overlaps the second signal line group including the second signal line and does not overlap the first signal line group. The photoelectric conversion device according to claim 1, characterized by this.

3. The first connection wiring and the second connection wiring are arranged in a layer between the wiring layer in which the plurality of signal lines are arranged and the semiconductor layer in which the photoelectric conversion unit is arranged, The layer in which the first connection wiring and the second connection wiring are arranged is a wiring layer adjacent to the wiring layer in which the plurality of signal lines are arranged. The photoelectric conversion device according to claim 2, characterized by this.

4. The number of signal lines included in the first signal line group is larger than the number of signal lines included in the second signal line group including the second signal line. The photoelectric conversion device according to claim 3, characterized by this.

5. including a portion where the first signal line group and the second signal line group are arranged in a first layer, In the first layer, between the first signal line group and the second signal line group including the second signal lines, a second shield wiring extending in parallel with the signal lines and supplied with a fixed potential is arranged. The photoelectric conversion device according to claim 4, characterized in that.

6. In the same layer as the first connection wiring, a third connection wiring connecting the selection portion of the third pixel and the third signal line is arranged. Between the second connection wiring and the third connection wiring, a third shield wiring supplied with a fixed potential is arranged. The photoelectric conversion device according to claim 5, characterized in that.

7. In the plan view, at least a part of the second shield wiring and the third shield wiring overlap. The photoelectric conversion device according to claim 6, characterized in that.

8. Between the second connection wiring and the third connection wiring, a fourth shield wiring supplied with a fixed potential is arranged. The photoelectric conversion device according to claim 6, characterized in that.

9. In the plan view, at least a part of the first shield wiring and the fourth shield wiring overlap. The photoelectric conversion device according to claim 8, characterized in that.

10. In a predetermined mode, the signal lines constituting the first signal line group are used for reading an image signal for video display, and the signal lines constituting the second signal line group including the second signal lines are used for reading an image signal for sensing. The photoelectric conversion device according to claim 1, characterized in that.

11. The plurality of pixels include a fourth pixel arranged in the third row different from the first row and the second row in the first column. The plurality of signal lines include a third signal line group composed of one or more of the signal lines and including a fourth signal line connected to the fourth pixel. In the predetermined mode, the signal lines constituting the third signal line group are not used for reading an image signal for video display or for reading an image signal for sensing. The photoelectric conversion device according to claim 10, characterized in that.

12. In the predetermined mode, a fixed potential is supplied to the third signal line group. The photoelectric conversion device according to claim 11, characterized in that.

13. The signal lines constituting the third signal line group are arranged between the first signal line group and the second signal line group including the second signal lines. The photoelectric conversion device according to claim 12, characterized in that.

14. The photoelectric conversion device according to claim 1, wherein in plan view, a source region of a transistor constituting the selection unit is disposed between the first signal line group and a second signal line group including the second signal line.

15. The photoelectric conversion unit is disposed in a semiconductor layer, The photoelectric conversion device according to claim 1, wherein light is irradiated from a side opposite to a side where the signal line and the first connection wiring are disposed.

16. The plurality of pixels are disposed in a first semiconductor layer, A scanning circuit that controls driving of the plurality of pixels is disposed in a second semiconductor layer, The photoelectric conversion device according to claim 1, wherein the first semiconductor layer and the second semiconductor layer are stacked.

17. A photoelectric conversion device according to any one of claims 1 to 16, A photoelectric conversion system, comprising: a signal processing unit that generates an image using a signal output from the photoelectric conversion device.

18. A moving body including the photoelectric conversion device according to any one of claims 1 to 16, The moving body, comprising: a control unit that controls movement of the moving body using a signal output from the photoelectric conversion device.

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