Distance measurement method, distance measurement system, and substrate processing apparatus

Abstract

To appropriately measure the distance from a substrate to a ceiling surface in a processing vessel.SOLUTION: A distance measurement method includes a process for heating, a process for carrying in, and a process for measuring. In the process for heating, a processing vessel that can accommodate the substrate is heated. In the process of carrying in, a substrate-shaped jig is carried into the processing vessel while the processing vessel is heated. In the process for measuring, the distance from the jig to the ceiling surface in the processing vessel by means of a distance sensor installed in the jig is measured.SELECTED DRAWING: Figure 14

Description

Technical Field

[0001] The present disclosure relates to a distance measurement method, a distance measurement system, and a substrate processing apparatus.

Background Art

[0002] Conventionally, as a technique for removing moisture remaining on the surface of a substrate while suppressing pattern collapse, a supercritical drying technique is known in which a substrate is dried using a supercritical fluid obtained under a high-temperature and high-pressure environment formed in a processing container.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a technique capable of appropriately measuring the distance from a substrate to the ceiling surface in a processing container.

Means for Solving the Problems

[0005] A distance measurement method according to an aspect of the present disclosure includes a heating step, a loading step, and a measurement step. The heating step heats a processing container capable of accommodating a substrate. The loading step loads a jig having a substrate shape into the processing container in a state where the processing container is heated. The measurement step measures the distance from the jig to the ceiling surface in the processing container by a distance sensor provided on the jig.

Effects of the Invention

[0006] According to the present disclosure, the distance from a substrate to the ceiling surface in a processing container can be appropriately measured.

Brief Description of the Drawings

[0007]

Figure 1

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Figure 14

DETAILED DESCRIPTION OF THE INVENTION

[0008] Hereinafter, embodiments for implementing a distance measurement method, a distance measurement system, and a substrate processing apparatus according to the present disclosure (hereinafter referred to as "embodiments") will be described in detail with reference to the drawings. Note that the present disclosure is not limited by these embodiments. Also, the embodiments can be appropriately combined as long as the processing contents do not conflict. In addition, in the following embodiments, the same parts are denoted by the same reference numerals, and redundant descriptions are omitted.

[0009] Conventionally, as a technique for removing moisture remaining on the surface of a substrate while suppressing pattern collapse, a supercritical drying technique is known in which a substrate is dried using a supercritical fluid obtained under a high-temperature and high-pressure environment formed in a processing container.

[0010] By the way, in the supercritical drying technique, if the distance from the substrate to the ceiling surface in the processing container deviates from an appropriate distance, the flow of the supercritical fluid between the substrate and the ceiling surface in the processing container is disturbed, so that the suppression of pattern collapse and the efficiency of moisture removal may decrease. For this reason, the realization of a technique for appropriately measuring the distance from the substrate to the ceiling surface in the processing container is expected.

[0011] [1. Configuration of Substrate Processing System] First, the configuration of a substrate processing system (an example of a distance measurement system and a substrate processing apparatus) according to the embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic cross-sectional view of the substrate processing system according to the embodiment as viewed from above. FIG. 2 is a schematic cross-sectional view of the substrate processing system according to the embodiment as viewed from the side. Hereinafter, in order to clarify the positional relationship, X-axis, Y-axis, and Z-axis orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction.

[0012] As shown in FIG. 1, the substrate processing system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.

[0013] (Regarding the loading / unloading station 2) The loading / unloading station 2 includes a carrier placement unit 11 and a transfer unit 12. A plurality of carriers C for horizontally accommodating a plurality of semiconductor wafers W (hereinafter referred to as "wafer W") are placed on the carrier placement unit 11. Further, a jig 70 (see FIGS. 7 and 8) described later can be accommodated in the carrier C.

[0014] The transfer unit 12 is provided adjacent to the carrier placement unit 11. Inside the transfer unit 12, a transfer device 13 and a delivery unit 14 are arranged.

[0015] The transfer device 13 includes a wafer holding mechanism for holding the wafer W. Further, the transfer device 13 can move in the horizontal and vertical directions and turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 14 using the wafer holding mechanism.

[0016] (Regarding the processing station 3) The processing station 3 is provided adjacent to the transfer unit 12. The processing station 3 includes a transfer block 4 and a plurality of processing blocks 5.

[0017] (Regarding the transfer block 4) The transfer block 4 includes a transfer area 15 and a transfer device 16. The transfer area 15 is, for example, a rectangular parallelepiped region extending along the arrangement direction (X-axis direction) of the loading / unloading station 2 and the processing station 3. The transfer device 16 is arranged in the transfer area 15.

[0018] The transfer device 16 includes a wafer holding mechanism for holding the wafer W. Further, the transfer device 16 can move in the horizontal and vertical directions and turn around the vertical axis, and transfers the wafer W between the delivery unit 14 and the plurality of processing blocks 5 using the wafer holding mechanism.

[0019] (Regarding the arrangement of the processing block 5) The plurality of processing blocks 5 are arranged adjacent to the conveyance area 15 on both sides of the conveyance area 15. Specifically, the plurality of processing blocks 5 are arranged on one side (the positive Y-axis direction side) and the other side (the negative Y-axis direction side) of the conveyance area 15 in a direction (Y-axis direction) orthogonal to the arrangement direction (X-axis direction) of the loading / unloading station 2 and the processing station 3.

[0020] Also, as shown in FIG. 2, the plurality of processing blocks 5 are arranged in multiple stages along the vertical direction. In the present embodiment, the number of stages of the plurality of processing blocks 5 is three, but the number of stages of the plurality of processing blocks 5 is not limited to three.

[0021] Thus, in the substrate processing system 1 according to the embodiment, the plurality of processing blocks 5 are arranged in multiple stages on both sides of the conveyance block 4. And the conveyance of the wafer W between the processing blocks 5 arranged in each stage and the delivery unit 14 is performed by one conveyance device 16 arranged in the conveyance block 4.

[0022] (Regarding the internal configuration of the processing block 5) Each processing block 5 includes a liquid processing unit 17, a drying unit 18, and a supply unit 19.

[0023] The liquid processing unit 17 performs a cleaning process for cleaning the upper surface, which is the pattern formation surface of the wafer W. Also, the liquid processing unit 17 performs a liquid film formation process for forming a liquid film on the upper surface of the wafer W after the cleaning process. The configuration of the liquid processing unit 17 will be described later.

[0024] The drying unit 18 performs a supercritical drying process on the wafer W after the liquid film formation process. Specifically, the drying unit 18 dries the wafer W by bringing the wafer W after the liquid film formation process into contact with a processing fluid in a supercritical state. The configuration of the drying unit 18 will be described later.

[0025] The supply unit 19 supplies a processing fluid to the drying unit 18. Specifically, the supply unit 19 includes a group of supply devices such as a flow meter, a flow regulator, a back pressure valve, and a heater, and a housing that houses the group of supply devices. In the present embodiment, the supply unit 19 supplies CO2 as the processing fluid to the drying unit 18.

[0026] The liquid processing unit 17, the drying unit 18, and the supply unit 19 are arranged along the transport area 15 (that is, along the X-axis direction). Among the liquid processing unit 17, the drying unit 18, and the supply unit 19, the liquid processing unit 17 is arranged at the position closest to the loading / unloading station 2, and the supply unit 19 is arranged at the position farthest from the loading / unloading station 2.

[0027] Thus, each processing block 5 includes one liquid processing unit 17, one drying unit 18, and one supply unit 19 respectively. That is, the substrate processing system 1 is provided with the same number of liquid processing units 17, transport devices 16, and supply units 19.

[0028] Further, the drying unit 18 includes a processing area 181 where supercritical drying processing is performed, and a transfer area 182 where the wafer W is transferred between the transfer block 4 and the processing area 181. These processing area 181 and transfer area 182 are arranged along the transport area 15.

[0029] Specifically, among the processing area 181 and the transfer area 182, the transfer area 182 is arranged on the side closer to the liquid processing unit 17 than the processing area 181. That is, in each processing block 5, the liquid processing unit 17, the transfer area 182, the processing area 181, and the supply unit 19 are arranged in this order along the transport area 15.

[0030] (Regarding the control device 6) The substrate processing system 1 includes a control device 6. The control device 6 is, for example, a computer, and includes a control unit 61 and a storage unit 62.

[0031] The control unit 61 includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), input / output ports, and various circuits. By reading and executing the programs stored in the ROM, the CPU of such a microcomputer realizes the control of the transfer devices 13 and 16, the liquid processing unit 17, the drying unit 18, the supply unit 19, and the like.

[0032] Note that such programs may be recorded on a computer-readable recording medium and installed from the recording medium into the storage unit 62 of the control device 6. Examples of computer-readable recording media include hard disks (HD), flexible disks (FD), compact disks (CD), magneto-optical disks (MO), memory cards, and the like.

[0033] The storage unit 62 is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.

[0034] [2. Flow of substrate processing] Next, a series of substrate processing flows in the substrate processing system 1 described above will be described with reference to FIG. 3. FIG. 3 is a flowchart showing a series of substrate processing procedures executed in the substrate processing system 1 according to the embodiment. Note that the series of substrate processing shown in FIG. 3 is executed according to the control of the control unit 61.

[0035] As shown in FIG. 3, in the substrate processing system 1, first, a loading process is performed (step S101). In the loading process, the transfer device 13 (see FIG. 1) takes out the wafer W from the carrier C and places it on the delivery unit 14. Subsequently, the transfer device 16 (see FIG. 1) takes out the wafer W from the delivery unit 14 and loads it into the liquid processing unit 17.

[0036] Subsequently, in the substrate processing system 1, a cleaning process is performed in the liquid processing unit 17 (step S102). The liquid processing unit 17 supplies various processing liquids to the upper surface of the wafer W, which is the pattern formation surface, to remove particles, natural oxide films, etc. from the upper surface of the wafer W.

[0037] Subsequently, in the substrate processing system 1, a liquid film formation process is performed in the liquid processing unit 17 (step S103). The liquid processing unit 17 forms a liquid film of IPA in a liquid state (hereinafter referred to as "IPA liquid") on the upper surface of the wafer W after the cleaning process by supplying the IPA liquid to the upper surface of the wafer W.

[0038] The wafer W after the liquid film formation process is transported by the transfer device 16 to the delivery area 182 of the drying unit 18 arranged in the same processing block 5. The wafer W after the liquid film formation process transported to the delivery area 182 is transported from the delivery area 182 to the processing area 181.

[0039] Thereafter, in the substrate processing system 1, a supercritical drying process is performed in the processing area 181 (step S104). In the supercritical drying process, the drying unit 18 dries the wafer W after the liquid film formation process by bringing the wafer W after the liquid film formation process into contact with a processing fluid in a supercritical state.

[0040] Subsequently, in the substrate processing system 1, an unloading process is performed (step S105). In the unloading process, first, the wafer W after the supercritical drying process is transported from the processing area 181 to the delivery area 182. Then, the transfer device 16 takes out the wafer W after the supercritical drying process from the delivery area 182 and transports it to the delivery unit 14. Then, the transfer device 13 takes out the wafer W after the supercritical drying process from the delivery unit 14 and transports it to the carrier C. When the unloading process is completed, a series of substrate processing for one wafer W is completed.

[0041] 〔3. Configuration of the Liquid Processing Unit〕 Next, the configuration of the liquid processing unit 17 will be described with reference to FIG. 4. FIG. 4 is a diagram showing a configuration example of the liquid processing unit 17. The liquid processing unit 17 is configured, for example, as a single-wafer cleaning apparatus that cleans the wafers W one by one by spin cleaning.

[0042] As shown in FIG. 4, the liquid processing unit 17 holds the wafer W substantially horizontally by a wafer holding mechanism 25 disposed in an outer chamber 23 that forms a processing space, and rotates the wafer W by rotating the wafer holding mechanism 25 around a vertical axis. Then, the liquid processing unit 17 causes the nozzle arm 26 to enter above the rotating wafer W, and supplies a chemical solution or a rinse solution from a chemical solution nozzle 26a provided at the tip of the nozzle arm 26 in a predetermined order, thereby performing a cleaning process on the upper surface of the wafer W.

[0043] Also, a chemical solution supply path 25a is formed inside the wafer holding mechanism 25 in the liquid processing unit 17. Then, the lower surface of the wafer W is also cleaned by the chemical solution or the rinse solution supplied from the chemical solution supply path 25a.

[0044] For the cleaning process, for example, first, particles and organic contaminants are removed by an SC1 solution (a mixed solution of ammonia and hydrogen peroxide water), which is an alkaline chemical solution. Next, rinse cleaning is performed with deionized water (hereinafter referred to as "DIW"), which is a rinse solution. Next, the natural oxide film is removed by a diluted hydrofluoric acid aqueous solution (hereinafter referred to as "DHF"), which is an acidic chemical solution. Next, rinse cleaning is performed with DIW.

[0045] The above-described various chemical solutions are received in the outer chamber 23 and an inner cup 24 disposed in the outer chamber 23, and are discharged from a drain port 23a provided at the bottom of the outer chamber 23 and a drain port 24a provided at the bottom of the inner cup 24. Further, the atmosphere inside the outer chamber 23 is exhausted from an exhaust port 23b provided at the bottom of the outer chamber 23.

[0046] The liquid film formation process is performed after the rinsing process in the cleaning process. Specifically, the liquid processing unit 17 supplies IPA liquid to the upper and lower surfaces of the wafer W while rotating the wafer holding mechanism 25. Thereby, the DIW remaining on both sides of the wafer W is replaced with IPA. Thereafter, the liquid processing unit 17 gently stops the rotation of the wafer holding mechanism 25.

[0047] The wafer W after the liquid film formation process is transferred to the transfer device 16 by a transfer mechanism (not shown) provided in the wafer holding mechanism 25 while a liquid film of IPA liquid is formed on its upper surface, and is carried out from the liquid processing unit 17. The liquid film formed on the wafer W prevents pattern collapse from occurring due to evaporation (vaporization) of the liquid on the upper surface of the wafer W during the transfer of the wafer W from the liquid processing unit 17 to the drying unit 18 or during the loading operation into the drying unit 18.

[0048] 〔4. Configuration of Drying Unit〕 Next, the configuration of the drying unit 18 will be described with reference to FIGS. 5 and 6. FIG. 5 is a schematic cross-sectional view showing a configuration example of the drying unit 18. FIG. 6 is a schematic cross-sectional view showing an example of a state in which the wafer W is accommodated inside the processing container.

[0049] As shown in FIG. 5, the drying unit 18 includes a processing container 31, a lid 32, and a holding portion 33.

[0050] The processing container 31 is a pressure vessel that can form a high-pressure environment of about 16 to 20 MPa, for example. The processing container 31 is disposed in the processing area 181 (see FIG. 1), and the supercritical drying process is performed in the processing space 311 inside the processing container 31. An opening 312 that communicates the processing space 311 and the transfer area 182 is formed on the side surface of the processing container 31 facing the transfer area 182 (see FIG. 1).

[0051] The lid 32 is connected to the moving mechanism 321, and is horizontally moved between the processing area 181 and the transfer area 182 by such a moving mechanism 321. Thereby, the lid 32 opens and closes the opening 312 of the processing container 31.

[0052] The holding part 33 holds the wafer W in the horizontal direction. The holding part 33 is, for example, a rectangular frame in plan view, and holds the wafer W by supporting the outer peripheral part of the wafer W from below. The holding part 33 is fixed to the lid 32.

[0053] The holding part 33 is moved into the processing space 311 together with the lid 32 by the moving mechanism 321 and is accommodated inside the processing space 311. The wafer W held by the holding part 33 is carried into the processing space 311 when the holding part 33 is accommodated inside the processing space 311.

[0054] The processing container 31 is provided with a supply part 35 and a discharge part 37. The supply part 35 is connected to the supply equipment group of the supply unit 19 (see FIG. 1), and supplies the processing fluid supplied from the supply unit 19 to the processing space 311. The discharge part 37 discharges the processing fluid from the processing space 311.

[0055] The supply part 35 is provided on the side surface of the processing container 31 on the side opposite to the side where the opening 312 of the processing space 311 is formed. The supply part 35 supplies the processing fluid to the processing space 311 in the horizontal direction from a supply port that opens laterally.

[0056] The discharge part 37 is provided on the bottom surface of the processing space 311 in the processing container 31. The discharge part 37 discharges the processing fluid from a discharge port that opens upward.

[0057] The drying unit 18 supplies a processing fluid from the supply unit 35 to the processing space 311 while discharging the processing fluid in the processing space 311 through the discharge unit 37. A damper for adjusting the discharge amount of the processing fluid from the processing space 311 is provided in the discharge path of the processing fluid, and the discharge amount of the processing fluid is adjusted by the damper so that the pressure in the processing space 311 is adjusted to a desired pressure. Thereby, the supercritical state of the processing fluid is maintained in the processing space 311. Hereinafter, the processing fluid in the supercritical state may be described as a "supercritical fluid".

[0058] The processing container 31 includes a first protruding portion 313 and a second protruding portion 314 that protrude on the lid-opening direction side of the opening 312 with respect to the opening 312. The first protruding portion 313 protrudes from the lower part of the opening 312 in the X-axis direction, and the second protruding portion 314 protrudes from the upper part of the opening 312 in the X-axis direction.

[0059] A first insertion hole 315 that communicates the upper surface and the lower surface of the first protruding portion 313 is formed in the first protruding portion 313. Further, a second insertion hole 316 that communicates the upper surface and the lower surface of the second protruding portion 314 is formed in the second protruding portion 314 at a position vertically opposed to the first insertion hole 315 (that is, above the first insertion hole 315).

[0060] The drying unit 18 also includes a locking member 42. The locking member 42 is inserted into the first insertion hole 315 formed in the first protruding portion 313. An elevating mechanism 43 for moving the locking member 42 along the vertical direction is connected to the locking member 42.

[0061] The drying unit 18 also includes a plurality (here, two) of heaters 51 and a temperature sensor 52. The heaters 51 are arranged so as to sandwich the processing space 311 of the processing container 31 vertically, and heat the processing space 311 according to the control by the control unit 61. The temperature sensor 52 measures the temperature of the processing space 311 of the processing container 31 and outputs the measurement result to the control unit 61.

[0062] In such a drying unit 18, first, a wafer W is carried in. In the carrying-in process, the drying unit 18 horizontally moves the lid 32 in the positive X-axis direction by the moving mechanism 321. Thereby, the wafer W held by the holding portion 33 is accommodated in the processing space 311 of the processing container 31, and the processing space 311 is sealed by the lid 32 (see FIG. 6).

[0063] Further, the drying unit 18 raises the locking member 42 by the elevating mechanism 43, and inserts the locking member 42 into the second insertion hole 316 formed in the second protruding portion 314.

[0064] The locking member 42 presses the lid 32 toward the processing space 311 against the internal pressure caused by the processing fluid supplied to the processing space 311. Thereby, the state in which the processing space 311 is sealed by the lid 32 can be maintained.

[0065] Subsequently, in the drying unit 18, a pressure increasing process is performed. In the pressure increasing process, the drying unit 18 supplies a processing fluid from the supply unit 35 to the processing space 311 of the processing container 31, thereby increasing the pressure in the processing space 311. As a result, the pressure in the processing space 311 rises from the atmospheric pressure to the processing pressure. The processing pressure is a pressure exceeding the critical pressure (about 7.2 MPa) at which CO2, which is the processing fluid, becomes a supercritical state, and is, for example, about 16 MPa. By such a pressure increasing process, the processing fluid in the processing space 311 undergoes a phase change to a supercritical state, and the IPA liquid pooled on the surface of the wafer W begins to dissolve into the supercritical state processing fluid. Note that the processing fluid supplied from the supply unit 19 may be in a supercritical state or in a liquid state.

[0066] Subsequently, in the drying unit 18, a circulation process is performed. In the circulation process, while maintaining the pressure in the processing space 311 at the processing pressure, the drying unit 18 supplies the heated processing fluid from the supply unit 35 to the processing space 311 and discharges the processing fluid supplied to the processing space from the discharge unit 37 to the outside of the processing space 311. As a result, a laminar flow of the processing fluid flowing in a predetermined direction around the wafer W is formed in the processing space 311. Further, the processing space 311 is heated to a predetermined temperature by the heated processing fluid.

[0067] The IPA liquid present on the pattern formation surface (upper surface) of the wafer W comes into contact with a supercritical fluid in a high-pressure state (for example, 16 MPa) and gradually dissolves into the supercritical fluid, and finally is replaced by the supercritical fluid. As a result, the gaps between the patterns are filled with the supercritical fluid.

[0068] Subsequently, in the drying unit 18, a depressurization process is performed. In the depressurization process, the drying unit 18 depressurizes the pressure in the processing space 311 from a high-pressure state to atmospheric pressure. As a result, the supercritical fluid that filled the gaps between the patterns changes into a normal, i.e., gaseous, processing fluid. In this way, the IPA liquid between the patterns is removed, and the drying process of the wafer W is completed.

[0069] Here, IPA liquid is used as the liquid for preventing drying, and CO2 is used as the processing fluid. However, a liquid other than IPA may be used as the liquid for preventing drying, or a fluid other than CO2 may be used as the processing fluid.

[0070] By the way, in the supercritical drying process, if the distance from the wafer W to the ceiling surface 317 in the processing container 31 deviates from an appropriate distance, the flow of the supercritical fluid between the wafer W and the ceiling surface 317 is disturbed, so that the suppression of pattern collapse and the efficiency of moisture removal decrease. For example, the distance from the wafer W to the ceiling surface 317 in the processing container 31 may vary from an appropriate distance due to thermal deformation of the processing container 31. Therefore, the realization of a technique for appropriately measuring the distance from the wafer W to the ceiling surface 317 in the processing container 31 is expected.

[0071] Therefore, in the substrate processing system 1 according to the embodiment, the jig 70 having the shape of the substrate is carried into the processing container 31 in a heated state, and the distance from the jig 70 to the ceiling surface in the processing container 31 is measured by a distance sensor provided on the jig 70.

[0072] Thereby, the distance from the jig 70 to the ceiling surface 317 in the processing container 31 can be measured in consideration of the thermal deformation of the processing container 31. Since the jig 70 has substantially the same shape as the wafer W which is the product substrate, the distance from the jig 70 to the ceiling surface 317 in the processing container 31 can be regarded as the distance from the wafer W to the ceiling surface 317 in the processing container 31. Therefore, according to the substrate processing system 1 according to the embodiment, the distance from the wafer W to the ceiling surface 317 in the processing container 31 can be appropriately measured.

[0073] 〔5. Configuration of the jig〕 Next, the configuration of the jig 70 will be described with reference to FIGS. 7 and 8. FIG. 7 is a schematic plan view showing the configuration of the jig 70 according to the embodiment. FIG. 8 is a schematic cross-sectional view showing the configuration of the jig 70 according to the embodiment.

[0074] As shown in FIGS. 7 and 8, the jig 70 includes a base substrate 71, a distance sensor 72, a temperature sensor 73, a control circuit 74, a memory 75, a read pad 76, a battery 77, a charging pad 78, and a cover 79. In FIG. 7, the cover 79 is omitted for convenience of explanation.

[0075] The base substrate 71 has substantially the same shape as the wafer W which is the product substrate. The base substrate 71 is, for example, in the shape of a disc with a diameter of about 300 mm. However, the base substrate 71 may have dimensions other than the above dimensions. Examples of the material of the base substrate 71 include silicon, carbon fiber, quartz glass, silicon carbide, silicon nitride, and alumina. The distance sensor 72 is embedded inside the base substrate 71, and the temperature sensor 73, the control circuit 74, the memory 75, the read pad 76, the battery 77, and the charging pad 78 are mounted on the surface of the base substrate 71. The distance sensor 72, the temperature sensor 73, the control circuit 74, the memory 75, the read pad 76, the battery 77, and the charging pad 78 are appropriately connected by wirings formed inside the base substrate 71.

[0076] The distance sensor 72 measures the distance to the object to be measured. In the embodiment, the object to be measured is the ceiling surface 317 inside the processing container 31. The distance sensor 72 is, for example, a capacitance sensor, and measures the capacitance corresponding to the distance from the jig 70 to the ceiling surface 317 inside the processing container 31. Note that the distance sensor 72 is not limited to a capacitance sensor, and may be a sensor of another type (for example, a laser distance sensor, an ultrasonic sensor, etc.) as long as it can measure a physical quantity that changes according to the distance to the object to be measured. The distance sensor 72 is arranged at, for example, a plurality of positions on the surface of the base substrate 71, and measures the distance to the object to be measured at each of the plurality of positions. In the embodiment, the distance sensor 72 is arranged at the position of the central portion of the base substrate 71 and the position of the peripheral portion of the base substrate 71. The number of the distance sensors 72 can be, for example, about 13.

[0077] The temperature sensor 73 measures the temperature of the jig 70.

[0078] The control circuit 74 is a circuit that controls each part of the jig 70. For example, the control circuit 74 controls the distance sensor 72 to measure the distance from the jig 70 to the ceiling surface 317 in the processing container 31, and stores the measured value of the measured distance in the memory 75. Also, for example, the control circuit 74 uses the temperature sensor 73 to control the timing of measuring the distance by the distance sensor 72.

[0079] The memory 75 stores the measured value of the distance from the jig 70 to the ceiling surface 317 in the processing container 31, which is measured by the distance sensor 72. The read pad 76 is connected to the memory 75 and is an interface for reading the measured value from the memory 75. When reading the measured value from the memory 75, the read pad 76 contacts the read pin 94 of the read container 90 described later.

[0080] The battery 77 supplies power to the distance sensor 72, the temperature sensor 73, the control circuit 74, etc. The battery 77 is detachably attached to a connector (not shown) on the surface of the base substrate 71 and is configured to be replaceable as necessary. The charging pad 78 is connected to the battery 77 and is an interface for charging the battery 77. When charging the battery 77, the charging pad 78 contacts the charging pin 96 of the read container 90 described later.

[0081] The cover 79 covers the temperature sensor 73, the control circuit 74, the memory 75, and the battery 77 mounted on the surface of the base substrate 71. An opening 79a is formed in the cover 79 at a position corresponding to the read pad 76 and the charging pad 78, and the read pad 76 and the charging pad 78 are exposed from the opening 79a.

[0082] 〔6. Measurement operation〕 Here, the measurement operation using the jig 70 will be described with reference to FIGS. 9 to 11. FIGS. 9 to 11 are diagrams showing an example of the measurement operation using the jig 70 according to the embodiment.

[0083] As shown in FIG. 9, for example, the drying unit 18 heats the processing space 311 of the processing container 31 by the heater 51. At this time, the holding part 33 is accommodated in the processing space 311, and the processing space 311 is in a state of being sealed by the lid 32. The processing container 31 and the holding part 33 are thermally deformed by the heat from the heater 51. The control unit 61 acquires the temperature of the processing space 311 of the processing container 31 from the temperature sensor 52.

[0084] When the temperature of the processing space 311 of the processing container 31 reaches a predetermined set temperature, in the drying unit 18, the loading process of the jig 70 is performed. The set temperature is, for example, the temperature of the processing space 311 assumed when it is assumed that the processing fluid heated in the supply unit 35 is supplied to the processing space 311, and is obtained by experiments or the like and stored in the storage unit 62 or the like. In the loading process of the jig 70, as shown in FIG. 10, for example, the drying unit 18 horizontally moves the lid 32 in the negative X-axis direction by the moving mechanism 321. As a result, the holding part 33 moves from the processing area 181 to the delivery area 182 together with the lid 32. The jig 70 is taken out from the carrier C by the transfer device 13 and conveyed to the delivery part 14, conveyed from the delivery part 14 to the delivery area 182 by the transfer device 16, and delivered to the holding part 33 by the transfer device 16 in the delivery area 182. Then, the drying unit 18 horizontally moves the lid 32 in the positive X-axis direction by the moving mechanism 321. As a result, the jig 70 held by the holding part 33 is carried into the processing space 311 of the processing container 31, and the processing space 311 is sealed by the lid 32. The jig 70 receives heat from the heater 51 in the sealed processing space 311. As a result, the temperature of the jig 70 rises.

[0085] Subsequently, the control circuit 74 of the jig 70 acquires the temperature of the jig 70 from the temperature sensor 73. When the temperature of the jig 70 reaches the above-mentioned set temperature, the control circuit 74 measures the distance d from the jig 70 to the ceiling surface 317 in the processing container 31 by the distance sensor 72, as shown in FIG. 11, for example. Then, the control circuit 74 stores the measured value of the distance d by the distance sensor 72 in the memory 75.

[0086] As described above, in the substrate processing system 1 according to the embodiment, the jig 70 having the shape of the substrate is carried into the processing container 31 while the processing container 31 is heated, and the distance d from the jig 70 to the ceiling surface 317 in the processing container 31 is measured by the distance sensor 72 while the jig 70 is heated.

[0087] Thereby, it is possible to measure the distance from the jig 70 to the ceiling surface 317 in the processing container 31 in consideration of the thermal deformation of the processing container 31 and the jig 70. Since the jig 70 has substantially the same shape as the wafer W which is the product substrate, the distance from the jig 70 to the ceiling surface 317 in the processing container 31 can be regarded as the distance from the wafer W to the ceiling surface 317 in the processing container 31. Therefore, according to the substrate processing system 1 according to the embodiment, it is possible to appropriately measure the distance from the wafer W to the ceiling surface 317 in the processing container 31 in consideration of the thermal deformation of the processing container 31 and the wafer W. 〔7. Correction operation〕

[0088] Here, when the distance sensor 72 is a capacitance sensor, due to secular change, there is a possibility that the capacitance corresponding to the distance from the jig 70 to the ceiling surface 317 measured by the distance sensor 72 and the capacitance corresponding to the actual distance deviate.

[0089] Therefore, in the embodiment, the measurement value by the distance sensor 72 is corrected before the start of the measurement operation using the jig 70.

[0090] The correction operation of the measurement value by such a distance sensor 72 will be described with reference to FIG. 12. FIG. 12 is a diagram showing an example of the correction operation of the measurement value by the distance sensor 72 according to the embodiment.

[0091] First, before starting the measurement operation using the jig 70, for example, as shown in FIG. 12, the jig 70 is housed in the correction container 80. The correction container 80 has an internal space 81 capable of housing the jig 70. The correction container 80 has a circular shape in plan view and has an opening 81a on its side surface. The jig 70 is carried into the internal space 81 of the correction container 80 through the opening 81a and is placed on a support 82 provided on the bottom surface of the internal space 81. The distance from the jig 70 housed in the correction container 80 to the ceiling surface 811 of the internal space 81 is a predetermined reference distance d0. The reference distance d0 is, for example, the distance at which a laminar flow of the processing fluid flowing in a predetermined direction around the jig 70 is formed when it is assumed that a heated processing fluid is supplied to the internal space 81 in the same manner as the processing fluid of the drying unit 18, and is obtained through experiments or the like.

[0092] When the jig 70 is housed in the correction container 80, the control circuit 74 of the jig 70 measures the distance from the jig 70 to the ceiling surface 811 in the correction container 80 using the distance sensor 72. Then, when the difference between the capacitance corresponding to the distance from the jig 70 to the ceiling surface 811 in the correction container 80 measured by the distance sensor 72 and the capacitance corresponding to the reference distance d0 exceeds the allowable range, the control circuit 74 corrects the capacitance measured by the distance sensor 72. That is, the control circuit 74 corrects the capacitance measured by the distance sensor 72 to the capacitance corresponding to the reference distance d0. Thereby, the malfunction of the distance sensor 72 due to aging can be suppressed.

[0093] 〔8. Reading Operation〕 Next, the operation of reading the measurement value from the jig 70 will be described with reference to FIG. 13. FIG. 13 is a diagram showing an example of the operation of reading the measurement value from the jig 70 according to the embodiment.

[0094] After the measurement operation using the jig 70 is completed, for example, as shown in FIG. 13, the jig 70 is housed in a reading container 90 (an example of a storage container). The reading container 90 has a box-shaped container body 91 that opens upward and a lid member 92. By combining the lid member 92 with the container body 91, an internal space capable of housing the jig 70 is formed. The jig 70 is placed on the bottom surface of the container body 91. Then, when the opening of the container body 91 is closed by the lid member 92, the jig 70 is housed in the internal space.

[0095] The lid member 92 is provided with a reading connector 93 (an example of a first connector) and a reading pin 94 (an example of a first pin). The reading connector 93 is an interface for reading the measurement values from the memory 75 of the jig 70. The reading connector 93 is connected to a reading device such as an information processing device when reading the measurement values from the memory 75. The reading pin 94 is electrically connected to the reading connector 93. The reading pin 94 contacts the reading pad 76 of the jig 70 housed in the reading container 90. Thereby, the reading device connected to the reading connector 93 can read the measurement values from the memory 75 to the reading device via the reading pad 76 and the reading pin 94.

[0096] Further, the lid member 92 is provided with a charging connector 95 (an example of a second connector) and a charging pin 96 (an example of a second pin). The charging connector 95 is an interface for charging the battery 77 of the jig 70. The charging connector 95 is connected to an external power source such as a charger when charging the battery 77. The charging pin 96 is electrically connected to the charging connector 95. The charging pin 96 contacts the charging pad 78 of the jig 70 housed in the reading container 90. Thereby, the external power source connected to the charging connector 95 can charge the battery 77 from the external power source via the charging pad 78 and the charging pin 96 in parallel with the reading of the measurement values to the reading device.

[0097] 〔9. Flow of distance measurement processing〕 Next, an example of the flow of the distance measurement process according to the embodiment will be described with reference to FIG. 14. FIG. 14 is a flowchart showing an example of the flow of the distance measurement process according to the embodiment.

[0098] The user of the substrate processing system 1 accommodates the jig 70 in the correction container 80 (step S201). The control circuit 74 of the jig 70 corrects the capacitance corresponding to the distance from the jig 70 to the ceiling surface 811 in the correction container 80 measured by the distance sensor 72 to the capacitance corresponding to the reference distance d0 (step S202). The corrected jig 70 is accommodated in the carrier C.

[0099] The control unit 61 controls the transfer devices 13 and 16 to take out the jig 70 from the carrier C and transfer it to the delivery area 182 of the drying unit 18 via the delivery unit 14.

[0100] Next, the control unit 61 heats the processing space 311 of the processing container 31 with the heater 51 (step S203). As a result, the temperature of the processing container 31 rises. Note that the heating by the heater 51 continues until step S210 is completed.

[0101] Next, the control unit 61 acquires the temperature of the processing container 31 from the temperature sensor 52 (step S204). Then, the control unit 61 determines whether or not the temperature of the processing container 31 acquired in step S204 has reached the set temperature (step S205).

[0102] If the temperature of the processing container 31 has not reached the set temperature (step S205; No), the control unit 61 returns the process to step S204. On the other hand, if the temperature of the processing container 31 has reached the set temperature (step S205; Yes), the control unit 61 controls the transfer device 16, the moving mechanism 321, etc. to carry the jig 70 into the processing container 31 from the delivery area 182 (step S206). As a result, the temperature of the jig 70 rises.

[0103] Next, the control circuit 74 of the jig 70 acquires the temperature of the jig 70 from the temperature sensor 73 (step S207). Then, the control circuit 74 determines whether or not the temperature of the jig 70 acquired in step S207 has reached the set temperature (step S208).

[0104] When the temperature of the jig 70 has not reached the set temperature (step S208; No), the control circuit 74 returns the process to step S207. On the other hand, when the temperature of the jig 70 has reached the set temperature (step S208; Yes), the control circuit 74 measures the distance d from the jig 70 to the ceiling surface 317 in the processing container 31 by the distance sensor 72 (step S209). Then, the control circuit 74 stores the measured value of the distance d by the distance sensor 72 in the memory 75 (step S210).

[0105] Next, the control unit 61 controls the transfer device 16, the moving mechanism 321, etc., and unloads the jig 70 from the drying unit 18.

[0106] Next, the user of the substrate processing system 1 accommodates the jig 70 in the loading container 90 (step S211). A reading device is connected to the reading connector 93 of the loading container 90. The reading device connected to the reading connector 93 reads the measured value from the memory 75 to the reading device via the reading pad 76 and the reading pin 94 (step S212). Further, an external power supply is connected to the charging connector 95 of the loading container 90. The external power supply connected to the charging connector 95 charges the battery 77 via the charging pad 78 and the charging pin 96 from the external power supply in parallel with the reading of the measured value to the reading device (step S212).

[0107] As described above, the distance measurement method according to the embodiment includes a heating step, a loading step, and a measurement step. The heating step heats a processing container (e.g., processing container 31) capable of accommodating a substrate (e.g., wafer W). The loading step loads a jig having the shape of a substrate (e.g., jig 70) into the processing container while the processing container is heated. The measurement step measures the distance (e.g., distance d) from the jig to the ceiling surface (e.g., ceiling surface 317) in the processing container by a distance sensor (e.g., distance sensor 72) provided on the jig.

[0108] Therefore, according to the distance measurement method according to the embodiment, the distance from the substrate to the ceiling surface in the processing container can be appropriately measured.

[0109] In the measurement step, the distance from the jig to the ceiling surface in the processing container may be measured by the distance sensor while the jig loaded into the processing container is in a heated state. Thereby, the distance from the substrate to the ceiling surface in the processing container can be appropriately measured in consideration of the thermal deformation of the processing container and the jig.

[0110] The distance sensor may be a capacitance sensor, and may measure the capacitance corresponding to the distance from the jig to the ceiling surface in the processing container. Thereby, measurement using a capacitance sensor having excellent heat resistance becomes possible.

[0111] The distance measurement method according to the embodiment may, before the measurement step, accommodate the jig in a first accommodation container (e.g., correction container 80) capable of accommodating the jig, where the distance from the accommodated jig to the ceiling surface (e.g., ceiling surface 811) is a predetermined reference distance (e.g., reference distance d0). And the distance measurement method according to the embodiment may correct the capacitance corresponding to the distance from the jig to the ceiling surface in the first accommodation container, measured by the distance sensor, to the capacitance corresponding to the reference distance. Thereby, the malfunction of the distance sensor due to secular change can be suppressed.

[0112] The measuring step may store the measured value of the distance from the jig to the ceiling surface in the processing container measured by the distance sensor in a memory (for example, memory 75) provided in the jig. Further, the distance measurement method according to the embodiment may, after the measuring step, accommodate the jig in a second accommodating container (for example, reading container 90) capable of accommodating the jig, the second accommodating container having a first connector (for example, reading connector 93) connected to the reading device. And the distance measurement method according to the embodiment may read the measured value from the memory to the reading device with the jig accommodated in the second accommodating container. Specifically, the second accommodating container may be capable of contacting a first pad (for example, reading pad 76) provided on the accommodated jig and may have a first pin electrically connected to the first connector. And the step of reading the measured value may read the measured value from the memory to the reading device via the first pad and the first pin. Thereby, the measured value can be efficiently read into the reading device.

[0113] The second accommodating container may have a second connector (charging connector 95) connected to an external power source. Further, the distance measurement method according to the embodiment may charge the battery (for example, battery 77) provided in the jig from the external power source in parallel with the step of reading the measured value. Specifically, the second accommodating container may be capable of contacting a second pad (for example, charging pad 78) provided on the accommodated jig and may have a second pin (for example, charging pin 96) electrically connected to the second connector. And the charging step may charge the battery from the external power source via the second pad and the second pin. Thereby, the battery can be efficiently charged.

[0114] The distance measurement system according to the embodiment (for example, the substrate processing system 1) includes a processing container (for example, the processing container 31), a jig (for example, the jig 70), and a storage container (for example, the loading container 90). The processing container can accommodate a substrate. The jig is a jig having the shape of a substrate that is carried into the processing container in a state where the processing container is heated, and includes a distance sensor (for example, the distance sensor 72) that measures the distance to the ceiling surface (for example, the ceiling surface 317) in the processing container, and a memory (for example, the memory 75) that stores the measurement value by the distance sensor. The storage container is a storage container that can store the jig, and has a first connector (for example, the loading connector 93) connected to a reading device that reads the measurement value from the memory.

[0115] Therefore, according to the distance measurement system according to the embodiment, the distance from the substrate to the ceiling surface in the processing container can be appropriately measured, and the measurement value can be efficiently read into the reading device.

[0116] The storage container may have a second connector (for example, the charging connector 95) connected to an external power source that charges a battery (for example, the battery 77) provided in the jig. Thereby, the battery can be efficiently charged.

[0117] The substrate processing apparatus according to the embodiment (as an example, the substrate processing system 1) includes a processing container (as an example, the processing container 31), a transfer device (as an example, the transfer device 16), and a control unit (as an example, the control unit 61). The processing container can accommodate a substrate (as an example, a wafer W). The transfer device transfers a jig having the shape of the substrate (as an example, the jig 70) to a delivery area (as an example, the delivery area 182) adjacent to the processing container. The control unit controls each part so as to execute a distance measurement method including a heating step, a loading step, and a measurement step. The heating step heats the processing container. The loading step loads the jig into the processing container in a state where the processing container is heated. The measurement step measures the distance (as an example, the distance d) from the jig to the ceiling surface (as an example, the ceiling surface 317) in the processing container by a distance sensor (as an example, the distance sensor 72) provided on the jig.

[0118] Therefore, according to the substrate processing apparatus according to the embodiment, the distance from the substrate to the ceiling surface in the processing container can be appropriately measured.

[0119] The embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. In fact, the above-described embodiments can be embodied in various forms. Also, the above embodiments may be omitted, replaced, or changed in various forms without departing from the scope and spirit of the appended claims.

Description of Reference Numerals

[0120] 1 Substrate processing system 6 Control device 16 Transfer device 18 Drying unit 31 Processing container 51 Heater 52 Temperature sensor 61 Control unit 62 Storage unit 70 Jig 71 Base substrate 72 Distance sensor 73 Temperature sensor 74 Control circuit 75 Memory 76 Reading Pad 77 Battery 78 Charging Pad 79 Cover 80 Correction Container 81 Internal Space 81a Opening 82 Support 90 Reading Container 91 Container Body 92 Lid Member 93 Reading Connector 94 Reading Pin 95 Charging Connector 96 Charging Pin 181 Processing Area 182 Delivery Area 317, 811 Ceiling Surface W Wafer

Claims

1. A step of heating a processing container capable of accommodating a substrate; A step of loading a jig having a substrate shape into the processing container while the processing container is heated; A step of measuring the distance from the jig to the ceiling surface in the processing container by a distance sensor provided on the jig A distance measurement method comprising:

2. The measuring step is Measuring the distance from the jig to the ceiling surface in the processing container by the distance sensor while the jig loaded into the processing container is heated The distance measurement method according to Claim 1.

3. The distance sensor is A capacitance sensor that measures the capacitance corresponding to the distance from the jig to the ceiling surface in the processing container The distance measurement method according to Claim 1.

4. Before the measuring step, a step of accommodating the jig in a first accommodating container capable of accommodating the jig, wherein the distance from the jig to be accommodated to the ceiling surface is a predetermined reference distance; A step of correcting the capacitance corresponding to the distance from the jig to the ceiling surface in the first accommodating container measured by the distance sensor to the capacitance corresponding to the reference distance The distance measurement method according to Claim 1, further comprising:

5. The measuring step is Storing the measured value of the distance from the jig to the ceiling surface in the processing container measured by the distance sensor in a memory provided on the jig; After the measuring step, a step of accommodating the jig in a second accommodating container capable of accommodating the jig, the second accommodating container having a first connector connected to a reading device; A step of reading the measured value from the memory to the reading device while the jig is accommodated in the second accommodating container The distance measurement method according to Claim 1, further comprising:

6. The second accommodating container is Capable of contacting a first pad provided on the jig to be accommodated, and having a first pin electrically connected to the first connector; The step of reading the measured value is Reading the measured value from the memory to the reading device via the first pad and the first pin The distance measurement method according to Claim 5.

7. The second accommodating container is Having a second connector connected to an external power source; A step of charging a battery provided on the jig from the external power source in parallel with the step of reading the measured value The distance measurement method according to Claim 5, further comprising:

8. The second accommodating container is It is capable of contacting a second pad provided on the jig to be accommodated, and has a second pin electrically connected to the second connector. The step of performing the charging is charging the battery from the external power source via the second pad and the second pin. The distance measurement method according to claim 7.

9. A processing container capable of accommodating a substrate, a jig having a substrate shape that is carried into the processing container in a state where the processing container is heated, the jig being provided with a distance sensor that measures the distance to the ceiling surface in the processing container, and a memory that stores the measurement value obtained by the distance sensor. An accommodation container capable of accommodating the jig, the accommodation container having a first connector connected to a reading device that reads the measurement value from the memory. A distance measurement system comprising the above.

10. The accommodation container has a second connector connected to an external power source that charges a battery provided on the jig. The distance measurement system according to claim 9.

11. A processing container capable of accommodating a substrate, a transfer device that transfers a jig having a substrate shape to a delivery area adjacent to the processing container, a control unit and comprising The control unit includes a step of heating the processing container, a step of loading the jig from the delivery area into the processing container in a state where the processing container is heated, a step of measuring the distance from the jig to the ceiling surface in the processing container by a distance sensor provided on the jig A substrate processing apparatus that controls each part so as to execute a distance measurement method including the above.

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