Infrared bolometer using semiconducting carbon nanotubes and method of manufacturing the same
JP2025093435APending Publication Date: 2025-06-24NEC CORP
Patent Information
- Application Number
- JP2023209069
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-12-12
- Publication Date
- 2025-06-24
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Figure 2025093435000001_ABST
Abstract
To reduce the resistance value of an infrared bolometer using a semiconductor type carbon nanotube.SOLUTION: An infrared bolometer has: a source electrode and a drain electrode provided apart from each other; a carbon nanotube film serving as a light detection unit that is present between the two electrodes and at least partially overlaps and is in electrical contact with the two electrodes; and a gate electrode provided above or below the carbon nanotube film via an insulating film.SELECTED DRAWING: Figure 1A
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Citation Information
Patent Citations
Semiconductor photo detector
JP2018148138A