Vapor deposition mask and method for manufacturing light emitting element

Abstract

To provide a vapor deposition mask capable of reducing the deviation of a film deposition position when closely contacting a vapor deposition mask to a substrate during vapor deposition.SOLUTION: A vapor deposition mask includes: a mask substrate including a recessed portion disposed on an opposing surface opposed to a substrate and a peripheral portion surrounding the recessed portion; and a plurality of projection portions disposed in the mask substrate. The bottom portion of the recessed portion has a plurality of openings and beam portions disposed between the plurality of openings; and the plurality of projection portions are disposed on an upper surface of the beam portions; and projection portions are not disposed on the opposing surface of the peripheral portion opposed to the substrate.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to an evaporation mask and a method for manufacturing an organic light-emitting device using the evaporation mask.

Background Art

[0002] Organic light-emitting devices have attracted attention as light-emitting devices capable of high-brightness light emission by low-voltage driving. An organic light-emitting device generally has a laminated structure including an anode, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode formed on a substrate. Examples of methods for forming this laminated structure include a vacuum evaporation method for a substrate using evaporation or sublimation, and a film-forming method using an inkjet or spin coating method in which an organic material is dissolved in a solvent.

[0003] Among these, in the formation of a laminated structure using a low-molecular material, it is common to use a vacuum evaporation method using a mask with a pattern. In the vacuum evaporation method, in order to form a desired pattern on a substrate, an evaporation mask having a pattern of a desired pixel opening is installed between the substrate and the heating section of the evaporation material, and film formation is performed.

[0004] In the vacuum evaporation method, it is required to bring the substrate and the evaporation mask close to each other to reduce evaporation blur and evaporation peeling during evaporation. Evaporation blur means that an evaporation material is formed in a wide range exceeding a desired evaporation range. For this, the distance between the substrate and the evaporation mask is important. Even if the substrate and the evaporation mask can be installed in an assumed positional relationship during evaporation, in the central portion of the evaporation mask, for example, the bar portion partitioning the pixel opening may be bent by the weight of the mask. As a result, evaporation blur is caused.

[0005] In recent years, there has been a demand for increasing the size of organic light-emitting devices. Accordingly, it is necessary to increase the size of the evaporation mask. When the size of the evaporation mask increases, the bending of the bar portion of the evaporation mask due to its own weight as described above becomes larger. When the evaporation mask is bent, the evaporation source may wrap around during evaporation, and evaporation blur may occur in which the evaporation material is formed not only at a desired position on the substrate but also at other positions.

[0006] Therefore, in order to realize the enlargement of the substrate and the vapor deposition mask, it is necessary to closely adhere the vapor deposition mask to the substrate. For this purpose, when using a magnetic mask, a method has been proposed in which a magnet is installed on the back surface of the substrate and the magnetic mask is attracted to the substrate by magnetic force. In this method, when the substrate comes into contact with the metal vapor deposition mask, the vapor deposition film and the metal mask may rub against each other, and the surface of the vapor deposition film and the substrate may be damaged. Therefore, in Patent Document 1, resin protrusions are provided on the outer periphery of the display portion on the surface side facing the substrate during vapor deposition of the metal mask.

Prior Art Documents

Patent Documents

[0007]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0008] However, when the magnetic vapor deposition mask is attracted to the substrate by magnetic force, since the frictional force between the resin protrusions on the metal mask and the substrate is small, the mask may shift, and a deviation may occur from the desired film formation position of the vapor deposition film.

[0009] The technology of the present disclosure has been made in view of the above, and an object thereof is to provide a technology for reducing the deviation of the film formation position when closely adhering the vapor deposition mask and the substrate during vapor deposition.

Means for Solving the Problems

[0010] One aspect of the present disclosure includes a mask substrate having a recess disposed on a facing surface facing a substrate and a peripheral portion surrounding the recess, and a protrusion disposed on the mask substrate. The bottom of the recess has a first opening and a second opening adjacent to each other in a first direction, a third opening and a fourth opening adjacent to each other in the first direction and adjacent to the first opening and the second opening in a second direction intersecting the first direction, and beam portions disposed between the first opening and the second opening, between the third opening and the fourth opening, between the first opening and the third opening, between the second opening and the fourth opening, and between the first opening and the fourth opening. The protrusion is disposed on the upper surface of the beam portion. In a plan view with respect to the upper surface, a region combining the first opening to the fourth opening and the beam portion is defined as a first region, and a region in the peripheral portion having the same area and the same outer shape as the first region is defined as a second region. The area where the facing surface of the second region contacts a parallel plane parallel to the facing surface is larger than the area where the facing surface of the first region contacts the parallel plane. The present disclosure relates to a vapor deposition mask characterized by this.

[0011] Another aspect of the present disclosure includes a mask substrate having a recess disposed on a facing surface facing a substrate and a peripheral portion surrounding the recess, and a plurality of protrusions disposed on the mask substrate. The bottom of the recess has a plurality of openings and beam portions disposed between the plurality of openings. The plurality of protrusions are disposed on the upper surface of the beam portion. The present disclosure relates to a vapor deposition mask characterized in that no protrusion is disposed on the facing surface of the peripheral portion facing the substrate.

Advantages of the Invention

[0012] With the above configuration, it is possible to provide a vapor deposition mask that reduces the deviation of the film formation position when the vapor deposition mask and the substrate are brought into close contact during vapor deposition.

Brief Description of the Drawings

[0013]

Figure 1

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Embodiments for Carrying Out the Invention

[0014] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. Note that the present disclosure is not limited to the following embodiments, and can be appropriately changed without departing from the gist thereof. In the drawings described below, components having the same or similar functions and configurations are denoted by the same reference numerals, and the description thereof may be omitted or simplified.

[0015] [First Embodiment] An example of the vapor deposition mask of the present embodiment will be described with reference to FIGS. 1(a), 1(b), and 1(c). The vapor deposition mask according to the present embodiment can be used, for example, to form a desired pattern on a substrate by a vacuum vapor deposition method.

[0016] The vapor deposition mask may be a mask made of a magnetic metal, or may be a mask using a non-magnetic material such as resin or silicon. Further, the members may form a vapor deposition mask alone, or a plurality of members may be combined. From the viewpoints of wet etching processing, electroforming processing, etc., by forming a part of the mask with resin, silicon, etc., it is possible to perform thinner and higher-precision processing than forming the mask with metal.

[0017] An example of the evaporation mask 100 of the present embodiment will be described with reference to FIGS. 1(a) to 1(c). FIG. 1(a) is a cross-sectional view (schematic cross-sectional view) showing the evaporation mask 100, the substrate 110, and the evaporation pattern 111. Further, FIG. 1(b) is a plan view (schematic plan view) of the evaporation mask 100 shown in FIG. 1(a) when viewed in plan with respect to the surface facing the substrate 110 of the evaporation mask 100. More specifically, a part of the evaporation mask 100 shown in FIG. 1(a) is a cross-sectional view of the portion along the A-A' cross-section of the evaporation mask 100 in FIG. 1(b). FIG. 1(c) is an enlarged view of the portion surrounded by the dashed line in FIG. 1(a).

[0018] The evaporation mask 100 of the present embodiment has a mask substrate 101 having a recess 104 disposed on the surface (opposing surface) facing the substrate 110 on which the evaporation pattern is formed, and a peripheral portion 107 surrounding the recess 104. Further, the evaporation mask 100 has a protrusion 105 disposed on the mask substrate 101.

[0019] The bottom of the recess 104 has a plurality of openings 103 and a beam portion 107 disposed between the plurality of openings 103. The protrusion 105 is disposed on the upper surface of the beam portion 108, and in FIG. 1(a), an example is shown in which a plurality of protrusions 105 are disposed on the upper surface of the beam portion 108 within the recess 104.

[0020] The recess 104 faces the effective region of the substrate 110 (the region where an organic light-emitting element or the like is formed). On the other hand, the peripheral portion 107 is used to fix the evaporation mask 100 and the substrate 110, and no effective elements such as organic light-emitting elements are disposed in the region of the substrate 100 facing the peripheral portion 107.

[0021] When the substrate 110 comes into contact with the vapor deposition mask 100, in the configuration of the vapor deposition mask 100 of the present embodiment, the surface of the peripheral portion 107 facing the substrate 100 and the tip of the protrusion 105 are in contact with the substrate 110. Since the tip of the protrusion 105 is in contact with the effective region of the substrate 110, it is possible to avoid contact with elements such as organic light-emitting elements arranged in the effective region. On the other hand, the protrusion 105 is not arranged on the surface of the peripheral portion 107 facing the substrate 110. Therefore, the peripheral portion 107 contacts the substrate 110 over the entire opposing surface facing the substrate 110.

[0022] That is, in the concave portion 104 of the vapor deposition mask 100, for a region of a certain area, in the peripheral portion 107, the ratio of the area where the vapor deposition mask 100 contacts the effective region of the substrate 110 is larger than the ratio of the area where the substrate 110 and the vapor deposition mask 100 contact. As a result, the frictional force of the opposing surface of the peripheral portion 107 with respect to the substrate 110 against a plane (parallel plane) parallel to the opposing surface is larger than the frictional force of the opposing surface of the region in the concave portion 104 having the same area and the same shape (outer shape) as the certain region against the parallel plane.

[0023] Compared with the case where the protrusions 105 are arranged over the entire opposing surface of the vapor deposition mask 100 with respect to the substrate 110, when the vapor deposition mask 100 and the substrate 110 are brought into contact, the contact area (ratio) between the vapor deposition mask 100 and the substrate 110 can be increased. As a result, the positional deviation between the vapor deposition mask 100 and the substrate 110 that may occur due to slipping of the vapor deposition mask 100 or the substrate 110 can be reduced. Therefore, the deviation of the film formation position of the vapor deposition pattern due to the positional deviation between the vapor deposition mask 100 and the substrate 110 can be reduced.

[0024] The vapor deposition mask 100 of the present embodiment will be described in more detail with reference to FIG. 1(b).

[0025] The bottom of the concave portion 104 of the vapor deposition mask 100 has a plurality of openings 103 and beam portions 108 arranged between the plurality of openings 103. Here, in a plan view of the vapor deposition mask 100 with respect to the opposing surface with the substrate 100, an example is shown in which the beam portion 108 has a lattice shape in the concave portion 104.

[0026] The plurality of protrusions 105 are arranged at the intersections of the lattice shape. A deposition material is deposited onto the substrate 110 through the openings 103 of the vapor deposition mask 100 to form a deposition pattern. Therefore, when arranging the protrusion portions 108 on the beam portions 108, it is preferable that there is a margin at the arrangement position of the protrusions 105. By arranging the protrusions 105 at the intersections of the lattice shape of the beam portions 108, a margin for the arrangement of the protrusions 105 can be obtained compared to arranging them at the portions of the sides of the lattice shape. Therefore, it is possible to suppress a decrease in the accuracy of the deposition pattern shape due to, for example, the protrusions 105 overlapping a part of the opening due to the misalignment of the arrangement of the protrusions 105.

[0027] In the concave portion 104, a region formed by connecting the outer shapes of the first opening 103a, the second opening 103b, the third opening 103c, the fourth opening 103d, and the portions of the beam portions 108 arranged therebetween is defined as the first region R1. In FIG. 1(b), the region R1 is the region surrounded by the dotted line. Also, in the peripheral portion 107, a region having the same area and the same outer shape as the region R1 is defined as R2.

[0028] The first opening 103a and the second opening 103b are adjacent to each other in the first direction, and the third opening 103c and the fourth opening 103d are adjacent to each other in the first direction. Also, the first opening 103a and the third opening 103c are adjacent to each other in the second direction intersecting the first direction, and the second opening 103b and the fourth opening 103d are adjacent to each other in the second direction. In FIG. 1(b), an example where the first direction and the second direction are perpendicular is shown, but the relationship between the first direction and the second direction is not limited to this, and they may intersect at an angle less than 90 degrees. In this specification, the lattice shape includes not only the case where the intersecting portions of the lattice intersect at right angles but also the case where they intersect at an angle less than 90 degrees.

[0029] In the vapor deposition mask 100 of the present embodiment, the area where the opposing surface of the first region R1 in contact with the substrate 110 contacts a parallel surface parallel to the opposing surface is larger than the area where the opposing surface of the second region R2 contacts the parallel surface. Therefore, the frictional force of the opposing surface of the first region R1 against the parallel surface is greater than the frictional force of the opposing surface of the second region R2 against the parallel surface. That is, also in the peripheral portion 107, compared with the configuration in which the protruding portions 105 are arranged in the same manner as the concave portions 104, the frictional force between the vapor deposition mask 100 and the substrate 110 can be increased. Therefore, when the vapor deposition mask 100 and the substrate 110 are brought into contact, it is possible to reduce the occurrence of misalignment of the vapor deposition mask 100 or the substrate 110 and misalignment in the film formation pattern.

[0030] The tip of the protruding portion 105 and the portion of the peripheral portion 107 having an opposing surface to the substrate 110 may have different materials. For example, when the mask substrate 101 has a metal, the tip of the protruding portion 105 may have a resin. In this case, in the vapor deposition mask 100 of FIG. 1(a), the tip of the protruding portion 105 has a resin and the portion of the peripheral portion 107 having an opposing surface has a metal.

[0031] With such a configuration, the tip of the protruding portion 105 that abuts on the effective region where the active element is formed on the substrate 110 can be made softer than the portion where the peripheral portion 107 contacts the substrate. Therefore, it is possible to reduce damage to the elements arranged in the effective region and deterioration of the elements due to the occurrence of cracks in the substrate.

[0032] The protruding portion 105 may be configured such that the bottom of the protruding portion is formed from a part of the mask substrate 101 and the tip has a resin, or may be configured such that the protruding portion 105 having a resin is arranged on the beam portion 108. As the resin, for example, any one or more of a polyimide resin, an acrylic resin, and an epoxy resin can be used. Here, the protruding portion 105 has a polyimide resin. The protruding portion 105 can be formed, for example, by applying the resin with a dispenser.

[0033] In addition, as the metal, for example, an Invar material can be used. When the substrate and the evaporation mask are brought into close contact using magnetic force, a metal with strong magnetism such as iron or stainless steel may also be used.

[0034] FIG. 1(c) is an enlarged view of the portion of the evaporation mask 100 in FIG. 1(a) surrounded by the dashed-dotted line, and is a schematic cross-sectional view of a part of the evaporation mask 100 in the cross-section passing through the protrusion 103 and the beam portion 108. In FIG. 1(c), the distance from the upper surface of the concave portion 104 to the upper surface of the protrusion 105 in the direction perpendicular to the opposing surface of the evaporation mask 100 facing the substrate 110 is defined as distance D1, and the distance from the upper surface of the concave portion 104 to the upper surface (opposing surface) of the peripheral portion 107 is defined as distance D2. At this time, the distance D1 is greater than or equal to the distance D2. By adopting such a configuration, the evaporation mask 100 and the substrate 110 can be suitably brought into contact.

[0035] When the distance D1 from the upper surface of the concave portion 104 to the tip of the protrusion 105 is smaller than the distance D2 from the upper surface of the concave portion 104 to the upper surface of the peripheral portion 107, there is a possibility that the protrusion 105 may not come into contact with the substrate 110. In this case, a gap is generated between the evaporation mask 100 and the effective area of the substrate 110, causing evaporation blur and positional deviation of the film-forming pattern with respect to the desired film-forming position. On the other hand, by setting the distance D1 to be greater than or equal to the distance D2, the protrusion 105 and the substrate 110 can be brought into contact, and evaporation blur and the like can be reduced.

[0036] Furthermore, it is preferable that the distance D1 from the upper surface of the concave portion 104 to the tip of the protrusion 105 is greater than the distance D2 from the upper surface of the concave portion 104 to the upper surface of the peripheral portion 107. In the present embodiment, the tip of the protrusion 105 preferably has higher elasticity (lower hardness) than the portion having the opposing surface of the peripheral portion 107 formed of resin or metal. Therefore, even if the distance D1 is made larger than the distance D2 and the protrusion 105 comes into contact with the substrate 110 before the peripheral portion 107, a large force that would damage the elements on the substrate 110 is not applied. On the other hand, the evaporation mask 100 and the substrate 110 can be surely brought into close contact. Thus, evaporation blur and positional deviation of the film-forming pattern can be suitably reduced.

[0037] Next, with reference to FIGS. 2(a) and 2(b), the film formation position deviation (position deviation) occurring in the vapor deposition mask will be described. FIGS. 2(a) and 2(b) show cross-sectional schematic views of the vapor deposition mask 200, the substrate 110, and the film formation pattern 209 during vapor deposition. On the substrate 110, it is preferable that the film formation pattern 209 is formed in contact with a desired position 105 on the substrate 101 by a vapor deposition source through which the vapor deposition material evaporated from the evaporation source passes through the opening 203 of the vapor deposition mask 200.

[0038] On the other hand, when the substrate 110 and the vapor deposition mask 200 are brought into contact, if the vapor deposition mask 200 is displaced with respect to the substrate 110, as shown in FIG. 2(b), the film formation pattern 209′ is formed at a position displaced from the desired position. Thus, the film formation pattern formed at a position corresponding to the opening 203 of the vapor deposition mask 200 being formed at a position displaced from the desired position 206 of the substrate 110 is referred to as the film formation position deviation.

[0039] By using the vapor deposition mask 200 of the present embodiment, it is possible to reduce the deviation of the film formation position during the formation of the film formation pattern by vapor deposition.

[0040] [Second Embodiment] Another form of the vapor deposition mask 200 will be described with reference to FIGS. 3(a), 3(b), 4(a), and 4(b). In the present embodiment, the parts different from those in the first embodiment will be described, and the description of the same configurations, functions, effects, etc. as those in the first embodiment will be omitted. Therefore, even if parts are given different reference numerals from those in the embodiment but are not described, they can have the same configurations, functions, effects, etc. as those in the first embodiment.

[0041] FIG. 3(a) is a cross-sectional view (cross-sectional schematic view) showing the vapor deposition mask 300 and the substrate 110. Further, FIG. 3(b) is a plan view (plan schematic view) of the vapor deposition mask 300 shown in FIG. 3(a) when viewed in plan with respect to the surface of the vapor deposition mask 300 facing the substrate 110. More specifically, a part of the vapor deposition mask 300 shown in FIG. 3(a) is a cross-sectional view of a part along the B - B′ cross-section of the vapor deposition mask 300 in FIG. 3(b).

[0042] In the present embodiment, the peripheral portion 307 of the vapor deposition mask 300 has an opposing portion 307A having an opposing surface facing the substrate 110, and a non-opposing portion 307B adjacent to the opposing portion 307A and not facing the substrate 110. In the present embodiment, the protruding portion 305 and the opposing portion 307A are made of the same material. For example, the protruding portion 305 and the opposing portion 307A can be configured to have a resin. By also making the non-opposing portion 307B a resin, it is possible to suppress the occurrence of scratches and cracks even in the periphery of the effective area of the substrate 110 when the substrate 110 and the vapor deposition mask 300 are brought into contact with each other.

[0043] Also in the vapor deposition mask 300 of the present embodiment, the ratio of the contact area with the substrate 110 to the area of the region facing the substrate 110 is higher in the peripheral portion 307 than in the effective area of the substrate 110. Therefore, it is possible to reduce the positional deviation between the substrate 110 and the vapor deposition mask 300 while reducing damage to the effective elements arranged in the effective area and the occurrence of cracks in the substrate.

[0044] Here, an example in which a part of the peripheral portion 307 has the same material as the protruding portion 305 has been shown, but the vapor deposition mask 300 of the present disclosure is not limited to this. For example, the portion of the mask substrate 301 having the front surface facing the substrate 110 may have the same material as the protruding portion 305.

[0045] Also, another example different from FIG. 3 of the vapor deposition mask will be described with reference to FIGS. 4(a) and 4(b). FIG. 4(a) is a cross-sectional view (schematic cross-sectional view) showing the vapor deposition mask 400 and the substrate 110. Further, FIG. 4(b) is a plan view (schematic plan view) of the vapor deposition mask 400 shown in FIG. 4(a) when viewed in plan with respect to the surface facing the substrate 110. More specifically, a part of the vapor deposition mask 400 shown in FIG. 4(a) is a cross-sectional view of the portion along the C-C' cross-section of the vapor deposition mask 400 in FIG. 4(b).

[0046] The protrusion 407 of the evaporation mask 400 of the present embodiment has the same material as the peripheral portion 407. For example, the protrusion 405 can be formed by molding the mask substrate 401 in the same manner when forming the peripheral portion 407. Therefore, in the evaporation mask 400 of the present embodiment, the protrusion 405 and the peripheral portion 407 can have a metal, for example, Invar. In this case, since there is no step of separately creating the protrusion 405, the manufacturing cost can be reduced.

[0047] Also in the evaporation mask 400 of the present embodiment, the ratio of the contact area of the evaporation mask 400 with the substrate 110 to the area of the region facing the substrate 110 is higher for the peripheral portion 307 than for the effective region of the substrate 110. Therefore, it is possible to reduce the positional deviation between the substrate 110 and the evaporation mask 400 while reducing damage to the effective elements arranged in the effective region and the occurrence of cracks in the substrate.

[0048] [Third Embodiment] Next, a part of the process of forming the light-emitting device will be described with reference to FIG. 5, but the present disclosure is not limited thereto.

[0049] In the evaporation chamber, for example, at least one of the electrodes of the organic light-emitting element and the plurality of layers of the organic layer can be formed on the substrate 110 by the following configuration. A part of the manufacturing method of the organic light-emitting element includes a step of opposing an evaporation mask having a plurality of openings and a substrate provided with a first electrode and an organic layer, and a step of aligning the substrate and the evaporation mask. Further, a part of the manufacturing method of the organic light-emitting element includes a step of bringing the substrate and the evaporation mask into contact with each other, and a step of forming a second electrode by evaporating a vapor deposition material through the opening of the evaporation mask on the substrate.

[0050] First, as shown in FIG. 5(a), a substrate 110 held by a substrate holding arm 520 is opposed to a vapor deposition mask 500 disposed on a mask stage 530 and having a plurality of openings. Here, any one of a first electrode, an insulating layer that electrically separates the first electrode, and an organic layer may be formed on the substrate 110. Further, wirings, pads, a circuit for driving an organic light-emitting element, etc. may be formed. As the vapor deposition mask 500, the vapor deposition mask of either the first embodiment or the second embodiment can be used.

[0051] Next, as shown in FIG. 5(b), for example, either one or both of the substrate 110 and the vapor deposition mask 500 are moved to align the substrate 110 and the vapor deposition mask 500. After that, as shown in FIG. 5(c), the substrate 110 and the vapor deposition mask 500 are brought into contact with each other by magnetic force. At this time, the substrate 110 and the vapor deposition mask 500 are brought into contact with each other by the magnetic force between a magnet 520 disposed on the surface of the substrate 110 opposite to the vapor deposition mask 500 and a mask substrate 101 having a metal. Next, as shown in FIG. 5(d), a vapor deposition pattern is formed on the substrate 110 by vapor-depositing a vapor deposition material 540 on the substrate 110 through the openings of the vapor deposition mask 500.

[0052] In the step of bringing the substrate 110 and the vapor deposition mask 500 into contact with each other, the vapor deposition mask 500 contacts the substrate 110 with a protrusion (omitted in FIG. 5) in the effective region of the substrate 110, while contacting the substrate 110 on the upper surface of the peripheral portion in the peripheral portion. Therefore, it is possible to reduce the positional deviation between the substrate 110 and the vapor deposition mask 500 while reducing damage to the effective elements disposed in the effective region and the occurrence of cracks in the substrate. Thereby, a film formation pattern with reduced film formation positional deviation can be formed.

[0053] The manufacturing apparatus for the organic light-emitting element here is an example, and the present disclosure is not limited thereto. The light-emitting element 69 has a plurality of functional layers, and the vapor deposition apparatus, which is the manufacturing apparatus thereof, is composed of a large number of vapor deposition chambers corresponding to the plurality of functional layers. Further, in addition to the vapor deposition chambers, a plurality of process chambers such as a charging chamber, a pre-treatment chamber, a transfer chamber, a relay chamber, and a substrate stock chamber may be provided.

[0054] [Embodiment 4] In this embodiment, a configuration example and an application example of an organic light-emitting device formed using the vapor deposition mask and the method for manufacturing an organic light-emitting device of the foregoing embodiment will be described.

[0055] [Configuration of Organic Light-Emitting Device] Next, an organic light-emitting device manufactured using the vapor deposition mask 100 in this embodiment will be described. In this embodiment, the organic light-emitting device is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When providing a color filter, a planarization layer may be provided between the protective layer. The planarization layer can be composed of an acrylic resin or the like. The same applies when providing a planarization layer between the color filter and the microlens.

[0056] [Substrate] Examples of the material of the substrate constituting the organic light-emitting device include at least one of quartz, glass, silicon, resin, and metal. Further, the substrate may be provided with a switching element such as a transistor and wiring thereon, and an insulating layer thereon. As the insulating layer, any material may be used as long as a contact hole can be formed so that wiring can be formed between the insulating layer and the first electrode, and insulation from non-connected wiring can be ensured. For example, resins such as polyimide, silicon oxide, silicon nitride, etc. can be used.

[0057] [Electrode] A pair of electrodes can be used for the electrodes of the organic light-emitting device. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting device emits light, the electrode with a higher potential is the anode, and the other is the cathode. Also, it can be said that the electrode that supplies holes to the light-emitting layer is the anode, and the electrode that supplies electrons is the cathode.

[0058] As the constituent material of the anode, it is preferable to use a material with as large a work function as possible. For example, simple metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, tungsten, etc., or mixtures containing these can be used for the anode. Alternatively, alloys combining these simple metals, metal oxides such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide, etc. may be used for the anode. Also, conductive polymers such as polyaniline, polypyrrole, polythiophene, etc. can be used for the anode.

[0059] Any of these electrode materials may be used alone, or two or more materials may be used in combination. Also, the anode may be composed of a single layer or may be composed of multiple layers.

[0060] When the electrode of the organic light-emitting element is configured as a reflective electrode, for the electrode material, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, or alloys or laminated products thereof can be used. With the above materials, it is also possible to function as a reflective film without having the role of an electrode. Also, when used as a transparent electrode, oxide transparent conductive layers such as indium tin oxide (ITO), indium zinc oxide, etc. can be used, but it is not limited to these. For the formation of the electrode, photolithography technology can be used.

[0061] On the one hand, as the constituent material of the cathode, those with a small work function are preferred. For example, alkali metals such as lithium, alkaline earth metals such as calcium, simple metals such as aluminum, titanium, manganese, silver, lead, chromium, or mixtures containing these can be mentioned. Alternatively, alloys combining these simple metals can also be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, zinc-silver, etc. can be used. The use of metal oxides such as indium tin oxide (ITO) is also possible. These electrode materials can be used alone or in combination of two or more. Also, the cathode may have a single-layer structure or a multi-layer structure. Among them, it is preferable to use silver, and in order to reduce the aggregation of silver, it is more preferable to use a silver alloy. As long as the aggregation of silver can be reduced, the ratio of the alloy does not matter. For example, silver: other metals can be 1:1, 3:1, etc.

[0062] The cathode may be a top emission element using an oxide conductive layer such as ITO, or a bottom emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. As a method for forming the cathode, although not particularly limited, it is more preferable to use direct current and alternating current sputtering methods, etc., because the film coverage is good and the resistance is easily reduced.

[0063] [Pixel isolation layer] The pixel isolation layer is formed of a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or a silicon oxide (SiO) film formed using chemical vapor deposition (CVD) method. In order to increase the in-plane resistance of the organic compound layer, the organic compound layer, particularly the hole transport layer, is preferably formed thinly on the sidewalls of the pixel isolation layer. Specifically, by increasing the taper angle of the sidewalls of the pixel isolation layer and the film thickness of the pixel isolation layer, and increasing the peeling during evaporation, the film thickness of the sidewalls can be formed thinly.

[0064] On the other hand, it is preferable to adjust the sidewall taper angle and the film thickness of the pixel isolation layer so that voids are not formed in the protective layer formed thereon. Since no voids are formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, it is possible to reduce the occurrence of dark spots and the degradation of reliability such as the occurrence of poor conduction of the second electrode.

[0065] [Organic compound layer] The organic compound layer of the organic light-emitting element may be formed as a single layer or as a plurality of layers. When there are a plurality of layers, depending on its function, it may be called a hole injection layer, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer, or an electron injection layer. The organic compound layer is mainly composed of an organic compound, but may contain inorganic atoms or inorganic compounds. For example, it may have copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, etc. The organic compound layer may be disposed between the first electrode and the second electrode, and may be disposed in contact with the first electrode and the second electrode.

[0066] [Protective layer] In the organic light-emitting element of the present embodiment, a protective layer may be provided on the second electrode. For example, by adhering glass provided with a moisture absorbent on the second electrode, the intrusion of water or the like into the organic compound layer can be reduced, and the occurrence of display defects can be reduced. As another embodiment, a passivation film such as silicon nitride may be provided on the cathode to reduce the intrusion of water or the like into the organic compound layer. For example, after forming the cathode, it may be transferred to another chamber without breaking the vacuum, and a silicon nitride film with a thickness of 2 μm may be formed by CVD method to serve as a protective layer. A protective layer using atomic layer deposition (ALD method) may be provided after the film formation by CVD method. The material of the film by ALD method is not limited, but may be silicon nitride, silicon oxide, aluminum oxide, etc. Silicon nitride may be further formed by CVD method on the film formed by ALD method. The film by ALD method may have a smaller film thickness than the film formed by CVD method. Specifically, it may be 50% or less, and further 10% or less.

[0067] [Color Filter] In the organic light-emitting element of this embodiment, a color filter may be provided on the protective layer. For example, a color filter considering the size of the organic light-emitting element may be provided on another substrate, and it may be bonded to the substrate on which the organic light-emitting element is provided, or a color filter may be patterned using photolithography technology on the protective layer shown above. The color filter may be composed of a polymer.

[0068] [Planarization Layer] In the organic light-emitting element of this embodiment, a planarization layer may be provided between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the underlying layer. When the purpose is not restricted, the planarization layer may sometimes be called a resin layer. The planarization layer may be composed of an organic compound, and may be a low molecule or a polymer, but it is preferably a polymer.

[0069] The planarization layer may be provided above and below the color filter, and its constituent materials may be the same or different. Specifically, examples include polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, urea resin, etc.

[0070] [Micro Lens] The organic light-emitting element may have an optical member such as a micro lens on its light-emitting side. The micro lens can be composed of an acrylic resin, an epoxy resin, etc. The micro lens may be for the purpose of increasing the amount of light extracted from the organic light-emitting element and controlling the direction of the extracted light. The micro lens may have a hemispherical shape. When having a hemispherical shape, among the tangents in contact with the hemisphere, there is a tangent parallel to the insulating layer, and the contact point between the tangent and the hemisphere is the vertex of the micro lens. The vertex of the micro lens can be determined similarly in any cross-sectional view. That is, among the tangents in contact with the semi-circle of the micro lens in the cross-sectional view, there is a tangent parallel to the insulating layer, and the contact point between the tangent and the semi-circle is the vertex of the micro lens.

[0071] Also, the midpoint of the microlens can be defined. In the cross-section of the microlens, a line segment from the point where the arc shape ends to the point where another arc shape ends can be imagined, and the midpoint of this line segment can be called the midpoint of the microlens. The cross-section for discriminating the vertex and the midpoint may be a cross-section perpendicular to the insulating layer.

[0072] The microlens has a first surface with a convex portion and a second surface opposite to the first surface. It is preferable that the second surface is arranged closer to the functional layer side than the first surface. To adopt such a configuration, it is necessary to form a microlens on the light-emitting element. When the functional layer is an organic layer, it is preferable to avoid processes that become high temperature in the manufacturing process. Also, when adopting a configuration where the second surface is arranged closer to the functional layer side than the first surface, it is preferable that the glass transition temperatures of all the organic compounds constituting the organic layer are 100 °C or higher, and more preferably 130 °C or higher.

[0073] [Counter substrate] In the organic light-emitting element of this embodiment, a counter substrate may be provided on the planarization layer. Since the counter substrate is provided at a position corresponding to the aforementioned substrate, it is called a counter substrate. The constituent material of the counter substrate may be the same as that of the above substrate. When the above substrate is used as the first substrate, the counter substrate can be used as the second substrate.

[0074] [Organic layer] The organic compound layers (hole injection layer, hole transport layer, electron blocking layer, light-emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light-emitting element of this embodiment are formed by the methods shown below.

[0075] The organic compound layers constituting the organic light-emitting element of this embodiment can be formed using dry processes such as vacuum evaporation, ionization evaporation, sputtering, and plasma. Also, instead of the dry process, a wet process of dissolving in an appropriate solvent and forming a layer by a known coating method (for example, spin coating, dipping, casting method, LB method, inkjet method, etc.) can be used.

[0076] When a layer is formed by a vacuum evaporation method, a solution coating method, or the like, crystallization and the like hardly occur, and the film has excellent stability over time. Further, when forming a film by a coating method, a film can also be formed in combination with an appropriate binder resin.

[0077] Examples of the binder resin include, but are not limited to, polyvinylcarbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, urea resin, etc. Further, these binder resins may be used alone as a homopolymer or copolymer, or two or more of them may be mixed and used. Furthermore, additives such as known plasticizers, antioxidants, and ultraviolet absorbers may be used in combination as necessary.

[0078] [Pixel Circuit] The light-emitting device having the organic light-emitting element of the present embodiment may have a pixel circuit connected to the organic light-emitting element. The pixel circuit may be an active matrix type that independently controls the light emission of the first organic light-emitting element and the second organic light-emitting element. The active matrix type circuit may be voltage programming or current programming. The driving circuit has a pixel circuit for each pixel. The pixel circuit may have an organic light-emitting element, a transistor for controlling the light emission luminance of the organic light-emitting element, a transistor for controlling the light emission timing, a capacitor for holding the gate voltage of the transistor for controlling the light emission luminance, and a transistor for connecting to GND without passing through the light-emitting element.

[0079] The light-emitting device has a display region and a peripheral region arranged around the display region. The display region has pixel circuits, and the peripheral region has a display control circuit. The mobility of the transistors constituting the pixel circuits may be smaller than the mobility of the transistors constituting the display control circuit. The slope of the current-voltage characteristics of the transistors constituting the pixel circuits may be smaller than the slope of the current-voltage characteristics of the transistors constituting the display control circuit. The slope of the current-voltage characteristics can be measured by so-called Vg-Ig characteristics. The transistors constituting the pixel circuits are transistors connected to a light-emitting element such as a first organic light-emitting element.

[0080] [Pixel] The organic light-emitting element of this embodiment has a plurality of pixels. The pixels have sub-pixels that emit different colors from each other. The sub-pixels may have emission colors of RGB, for example. The pixels emit light in a region also called a pixel aperture. This region is the same as the first region. The pixel aperture may be 15 μm or less and may be 5 μm or more. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc. The distance between sub-pixels may be 10 μm or less, and specifically may be 8 μm, 7.4 μm, 6.4 μm, 5.0 μm.

[0081] In a plan view, the pixels can take a known arrangement form. For example, it may be a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the sub-pixels in a plan view may take any known shape. For example, it may be a rectangle, a quadrilateral such as a rhombus, a hexagon, etc. Note that if the shape of the sub-pixel is approximately rectangular, it is considered to be included in a rectangle. Therefore, the shape of the sub-pixel may be any shape approximated to the above-known shapes. The pixels can be configured by combining the shape of the sub-pixels and the pixel arrangement.

[0082] [Use of the organic light-emitting element] The organic light-emitting device according to this embodiment can be used as a component of a display device or a lighting device. Other applications of the organic light-emitting device include uses such as an exposure light source of an electrophotographic image forming device, a backlight of a liquid crystal display device, and a light-emitting device having a color filter for a white light source.

[0083] The display device may be an image information processing device that has an image input unit for inputting image information from an area CCD, a linear CCD, a memory card, etc., has an information processing unit for processing the input information, and displays the input image on a display unit.

[0084] In addition, the display unit of an imaging device or an inkjet printer may have a touch panel function. The driving method of this touch panel function may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method, and is not particularly limited. Also, the display device may be used for the display unit of a multifunction printer.

[0085] Next, a display device including the organic light-emitting device according to this embodiment will be described with reference to the drawings. FIGS. 6(a) and 6(b) are cross-sectional schematic views showing an example of a display device having an organic light-emitting device and a transistor connected to this organic light-emitting device. The transistor is an example of an active element. The transistor may be a thin film transistor (TFT).

[0086] FIG. 6(a) is an example of a pixel which is a component of a display device having an organic light-emitting device according to this embodiment. The pixel has a sub-pixel 30. The sub-pixel is divided into 30R, 30G, and 30B by its light emission. The emission color may be distinguished by the wavelength emitted from the light-emitting layer, or the light emitted from the sub-pixel may be selectively transmitted or color-converted by a color filter or the like. Each sub-pixel has a reflective electrode 32 which is a first electrode on an interlayer insulating layer 31, and an insulating layer 33 covering the edge of the reflective electrode 32. Further, the sub-pixel has an organic compound layer 34 covering the reflective electrode 32 and the insulating layer 33, a transparent electrode 35 which is a second electrode, a protective layer 36, and color filters 37R, 37G, and 37B.

[0087] The interlayer insulating layer 31 may have transistors and capacitor elements arranged in its lower layer or inside. Also, the transistor and the first electrode may be electrically connected via a contact hole or the like (not shown).

[0088] The insulating layer 33 is also called a bank and a pixel isolation film. It covers the end of the first electrode and is arranged surrounding the first electrode. The portion where the insulating layer is not arranged is in contact with the organic compound layer 34, which becomes the light-emitting region. The organic compound layer 34 includes a hole injection layer 341, a hole transport layer 342, a first light-emitting layer 343, a second light-emitting layer 344, and an electron transport layer 345.

[0089] The transparent electrode 35 may be a transparent electrode, a reflective electrode, or a semi-transmissive electrode as the second electrode. The protective layer 36 reduces the penetration of moisture into the organic compound layer. Although the protective layer 36 is shown as a single layer in the figure, it may be a plurality of layers. Each layer may be an inorganic compound layer or an organic compound layer. The color filter is divided into a color filter 37R, a color filter 37G, and a color filter 37B according to its color. The color filter may be formed on a planarization film (not shown). Also, it may have a resin protective layer (not shown) on the color filter. Further, the color filter may be formed on the protective layer 36. Alternatively, the color filter may be provided on a counter substrate such as a glass substrate and then bonded.

[0090] Fig. 6(b) shows a display device 100 having the organic light-emitting element of this embodiment. The display device 100 has an organic light-emitting element 26 and a TFT 18 as an example of a transistor. A substrate 11 such as glass or silicon has an insulating layer 12 provided thereon. Active elements 18 such as TFTs are arranged on the insulating layer, and a gate electrode 13, a gate insulating film 14, and a semiconductor layer 15 of the active element are arranged. The TFT 18 is also composed of a semiconductor layer 15, a drain electrode 16, and a source electrode 17. An insulating film 19 is provided above the TFT 18. The anode 21 constituting the organic light-emitting element 26 and the source electrode 17 are connected via a contact hole 20 provided in the insulating film.

[0091] Note that the method of electrical connection between the electrodes (anode, cathode) included in the organic light-emitting element 26 and the electrodes (source electrode, drain electrode) included in the TFT is not limited to the mode shown in FIG. 6(b). That is, it is sufficient that either one of the anode or the cathode is electrically connected to either one of the TFT source electrode or the drain electrode. TFT refers to a thin-film transistor.

[0092] In the display device 100 of FIG. 6(b), the organic compound layer is illustrated as one layer, but the organic compound layer 22 may be a plurality of layers. On the cathode 23, a first protective layer 24 and a second protective layer 25 for reducing the deterioration of the organic light-emitting element are provided.

[0093] In the display device 100 of FIG. 6(b), a transistor is used as the switching element, but other switching elements may be used instead. Further, the transistor used in the display device 100 of FIG. 6(b) is not limited to a transistor using a single-crystalline silicon wafer, and may also be a thin-film transistor having an active layer on an insulating surface of a substrate. Examples of the active layer include non-single-crystalline silicon such as single-crystalline silicon, amorphous silicon, and microcrystalline silicon, and non-single-crystalline oxide semiconductors such as indium zinc oxide and indium gallium zinc oxide. Note that the thin-film transistor is also called a TFT element.

[0094] The transistor included in the display device 100 of FIG. 6(b) may be formed in a substrate such as a Si substrate. Here, being formed in the substrate means manufacturing a transistor by processing the substrate itself such as a Si substrate. That is, having a transistor in the substrate may mean that the substrate and the transistor are integrally formed.

[0095] The organic light-emitting device according to this embodiment has its emission luminance controlled by a TFT which is an example of a switching device, and an image can be displayed according to the respective emission luminance by providing a plurality of organic light-emitting devices in a plane. Note that the switching device according to this embodiment is not limited to a TFT, and may be a transistor formed of low-temperature polysilicon or an active matrix driver formed on a substrate such as an Si substrate. "On the substrate" can also mean inside the substrate. Whether to provide a transistor inside the substrate or use a TFT is selected according to the size of the display portion. For example, if the size is about 0.5 inches, it is preferable to provide an organic light-emitting device on an Si substrate.

[0096] Next, FIG. 7 shows a schematic diagram showing an example of a display device including the organic light-emitting device according to this embodiment. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits FPC 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. A transistor is printed on the circuit board 1007. The battery 1008 may not be provided if the display device is not a portable device, or may be provided at another position even if it is a portable device.

[0097] The display device 1000 may include color filters having red, green, and blue. The color filters may have the red, green, and blue arranged in a delta array. Further, the display device 1000 may be used for a display portion of a portable terminal. In that case, it may have both a display function and an operation function. Examples of the portable terminal include mobile phones such as smartphones, tablets, and head-mounted displays.

[0098] Further, the display device 1000 may be used for a display unit of an imaging device having an optical unit with a plurality of lenses and an imaging element that receives light that has passed through the optical unit. The imaging device may have a display unit that displays information acquired by the imaging element. Further, the display unit may be a display unit exposed to the outside of the imaging device or a display unit disposed within a viewfinder. The imaging device may be a digital camera or a digital video camera.

[0099] Next, FIG. 8(a) shows a schematic diagram illustrating an example of an imaging device having an organic light-emitting element according to the present embodiment. The imaging device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. The viewfinder 1101 may include the display device according to the present embodiment. In that case, the display device may display not only the image to be captured but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the speed at which the subject moves, the possibility that the subject is blocked by an obstacle, and the like.

[0100] Since the timing suitable for imaging is a very short period of time, it is better to display information as quickly as possible. Therefore, it is preferable to configure a display device with a high response speed using the organic light-emitting element of the present embodiment. A display device using an organic light-emitting element can be preferably used in these devices that require a display speed, rather than a liquid crystal display device.

[0101] The imaging device 1100 has an optical unit (not shown). The optical unit has a plurality of lenses and forms an image on an imaging element housed within the housing 1104. The plurality of lenses can adjust the focus by adjusting their relative positions. This operation can also be performed automatically. The imaging device may be referred to as a photoelectric conversion device. The photoelectric conversion device may include, as imaging methods, a method of detecting the difference from a previous image instead of sequentially imaging, a method of cutting out from an image that is always recorded, and the like.

[0102] FIG. 8(b) is a schematic diagram showing an example of an electronic device having the organic light-emitting element according to the present embodiment. The electronic device 800 includes a display unit 801, an operation unit 802, and a housing 803. The housing 803 may include a circuit, a printed circuit board having the circuit, a battery, and a communication unit. The operation unit 802 may be a button or a reaction unit of a touch panel method. The operation unit may be a biometric recognition unit that recognizes a fingerprint to unlock or the like. An electronic device having a communication unit can also be called a communication device. The electronic device 800 may further have a camera function by including a lens and an imaging element. An image captured by the camera function is displayed on the display unit. Examples of the electronic device include a smartphone and a notebook personal computer.

[0103] Next, FIG. 9(a) shows a schematic diagram showing an example of a display device having the organic light-emitting element according to the present embodiment. FIG. 9(a) shows a display device 900 such as a television monitor or a PC monitor. The display device 900 has a frame 901 and a display unit 902. The organic light-emitting element according to the present embodiment may be used for the display unit 902. Further, the display device 900 has a frame 901 and a base 903 that supports the display unit 902. The base 903 is not limited to the form of FIG. 9(a). The lower side of the frame 901 may also serve as the base. Further, the frame 901 and the display unit 902 may be bent. The radius of curvature may be 5000 mm or more and 6000 mm or less.

[0104] Further, FIG. 9(b) is a schematic diagram showing another example of a display device having the organic light-emitting element according to the present embodiment. The display device 910 in FIG. 9(b) is configured to be foldable and is a so-called foldable display device. The display device 910 includes a first display unit 911, a second display unit 912, a housing 913, and a bending point 914. The first display unit 911 and the second display unit 912 may have the organic light-emitting element according to the present embodiment. The first display unit 911 and the second display unit 912 may be a single display device without a joint. The first display unit 911 and the second display unit 912 can be separated at the bending point. The first display unit 911 and the second display unit 912 may display different images, or may display one image with the first display unit and the second display unit.

[0105] Next, FIG. 10(a) shows a schematic diagram illustrating an example of a lighting device having the organic light-emitting element according to the present embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusing portion 1405. The light source has the organic light-emitting element according to the present embodiment. The optical filter may be a filter that improves the color rendering property of the light source. The light diffusing portion can effectively diffuse the light of the light source, such as lighting up, and deliver the light to a wide range. The optical filter and the light diffusing portion may be provided on the light-emitting side of the illumination. If necessary, a cover may be provided on the outermost side.

[0106] The lighting device 1400 is, for example, a device for illuminating a room. The lighting device may emit any color from white, warm white, to other colors from blue to red. It may have a dimming circuit for dimming them. The lighting device 1400 may include the organic light-emitting element according to the present embodiment and a power supply circuit connected thereto. The power supply circuit is a circuit that converts an AC voltage into a DC voltage. Also, white has a color temperature of 4200K and warm white has a color temperature of 5000K. Further, the lighting device 1400 may have a color filter. Also, the lighting device 1400 may have a heat radiating portion. The heat radiating portion releases the heat inside the device to the outside of the device, and examples thereof include a metal with a high specific heat and liquid silicon.

[0107] FIG. 10(b) is a schematic diagram of an automobile, which is an example of a moving body having the organic light-emitting element according to the present embodiment. The automobile has a tail lamp, which is an example of a lamp. The automobile 1500 may have a tail lamp 1501 and may be configured to turn on the tail lamp when a braking operation or the like is performed.

[0108] The tail lamp 1501 has the organic light-emitting element according to the present embodiment. The tail lamp may have a protective member for protecting the organic EL element. The protective member has a certain degree of strength and may be made of any material as long as it is transparent, but is preferably made of polycarbonate or the like. A phthalic acid derivative, an acrylonitrile derivative, or the like may be mixed into the polycarbonate.

[0109] The vehicle 1500 may have a vehicle body 1503 and a window 1502 attached thereto. The window may be a transparent display as long as it is not a window for checking the front and rear of the vehicle. The transparent display may have an organic light-emitting element according to the present embodiment. In this case, constituent materials such as electrodes of the organic light-emitting element are made of transparent members.

[0110] Moreover, the moving body having the organic light-emitting element according to the present embodiment may be a ship, an aircraft, a drone, or the like. The moving body may have a fuselage and a lighting fixture provided on the fuselage. The lighting fixture may emit light to notify the position of the fuselage. The lighting fixture has the organic light-emitting element according to the present embodiment.

[0111] Moreover, the display device having the organic light-emitting element of the present embodiment can be applied to a system that can be worn as a wearable device such as smart glasses, an HMD, or smart contacts. The imaging display device used in such an application example has an imaging device capable of photoelectrically converting visible light and a display device capable of emitting visible light.

[0112] Next, FIG. 11(a) shows glasses 1600 (smart glasses) according to an application example of the display device having the organic light-emitting element of the present embodiment. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front surface side of the lens 1601 of the glasses 1600. Further, on the back surface side of the lens 1601, the display devices of the above-described embodiments are provided.

[0113] The glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the imaging device 1602 and the display devices according to the embodiments. Further, the control device 1603 controls the operations of the imaging device 1602 and the display device. An optical system for condensing light onto the imaging device 1602 is formed on the lens 1601.

[0114] Also, FIG. 11(b) shows glasses 1610 (smart glasses) according to another application example of a display device having the organic light-emitting element of the present embodiment. The glasses 1610 have a control device 1612. An imaging device corresponding to the imaging device 1602 and a display device are mounted on the control device 1612. An optical system for projecting the light emitted by the display device in the control device 1612 is formed in the lens 1611, and an image is projected onto the lens 1611. The control device 1612 functions as a power supply for supplying power to the imaging device and the display device, and controls the operations of the imaging device and the display device. The control device may have a gaze detection unit that detects the wearer's gaze. Infrared rays may be used for gaze detection. The infrared light emitting unit emits infrared light to the eyeball of the user who is gazing at the display image. An imaging image of the eyeball is obtained by detecting the reflected light of the emitted infrared light from the eyeball by an imaging unit having a light receiving element. By having a reducing means for reducing the light from the infrared light emitting unit to the display unit in a plan view, a decrease in image quality is reduced.

[0115] The user's gaze with respect to the display image is detected from the imaging image of the eyeball obtained by imaging infrared light. Any known method can be applied to gaze detection using the imaging image of the eyeball. As an example, a gaze detection method based on a Purkinje image by reflection of irradiation light on the cornea can be used.

[0116] More specifically, a gaze detection process based on the pupil corneal reflection method is performed. Using the pupil corneal reflection method, a gaze vector representing the orientation (rotation angle) of the eyeball is calculated based on the image of the pupil and the Purkinje image included in the imaging image of the eyeball, thereby detecting the user's gaze.

[0117] The display device having the organic light-emitting element according to the present embodiment may have an imaging device having a light receiving element, and control the display image of the display device based on the user's gaze information from the imaging device.

[0118] Specifically, the display device determines, based on the line-of-sight information, a first field-of-view region that the user is gazing at and a second field-of-view region outside the first field-of-view region. The first field-of-view region and the second field-of-view region may be determined by the control device of the display device, or the display device may receive those determined by an external control device. In the display region of the display device, the display resolution of the first field-of-view region may be controlled to be higher than that of the second field-of-view region. That is, the resolution of the second field-of-view region may be made lower than that of the first field-of-view region.

[0119] Further, the display region has a first display region and a second display region different from the first display region, and the display device may select, based on the line-of-sight information, a region with a higher priority from the first display region and the second display region. The first field-of-view region and the second field-of-view region may be determined by the control device of the display device, or the display device may receive those determined by an external control device. Also, the display device may control the resolution of the region with a higher priority to be higher than that of the region other than the region with a higher priority. That is, the display device may lower the resolution of the region with a relatively lower priority.

[0120] Note that the display device may use AI (Artificial Intelligence) to determine the first field-of-view region or the region with a higher priority. AI may be a model configured to estimate the angle of the line of sight and the distance to the object at the tip of the line of sight from the eye image, using the eye image and the direction in which the eye in the image is actually looking as teacher data. Also, the AI program may be possessed by the display device, the imaging device, or an external device. When the external device has the AI program, the AI program is transmitted from the external device to the display device via communication.

[0121] When the display device performs display control based on visual recognition detection, it is preferably applicable to smart glasses that further have an imaging device for imaging the outside. The smart glasses can display the imaged external information in real time.

[0122] FIG. 12 shows an image forming apparatus according to an embodiment of the present invention. FIG. 12(a) is a schematic diagram of an image forming apparatus 3600 according to an embodiment of the present invention. The image forming apparatus includes a photoreceptor, an exposure light source, a developing unit, a charging unit, a transferrer, a conveyance roller, and a fixing unit.

[0123] Light 2900 is irradiated from the exposure light source 2800, and an electrostatic latent image is formed on the surface of the photoreceptor 2700. This exposure light source has an organic light-emitting element according to the present invention. The developing unit 3100 has toner and the like. The charging unit 3000 charges the photoreceptor. The transferrer 3200 transfers the developed image onto the recording medium 3400. The conveyance unit 3300 conveys the recording medium 3400. The recording medium 3400 is, for example, paper. The fixing unit 3500 fixes the image formed on the recording medium.

[0124] FIGS. 12(b) and 12(c) are schematic diagrams showing a state in which a plurality of light-emitting units 3800 are arranged on a long substrate in the exposure light source 2800. The direction 3007 is a direction parallel to the axis of the photoreceptor and represents the column direction in which the organic light-emitting elements are arranged. This column direction is the same as the direction of the axis around which the photoreceptor 2700 rotates. This direction can also be called the major axis direction of the photoreceptor.

[0125] FIG. 12(b) shows a form in which the light-emitting units are arranged along the major axis direction of the photoreceptor. FIG. 12(c) shows a form different from (b), in which the light-emitting units are alternately arranged in the column direction in each of the first column and the second column. The first column and the second column are arranged at different positions in the row direction.

[0126] In the first column, a plurality of light-emitting units are arranged at intervals. The second column has light-emitting units at positions corresponding to the intervals between the light-emitting units in the first column. That is, also in the row direction, a plurality of light-emitting units are arranged at intervals.

[0127] The arrangement in FIG. 12(c) can also be described as, for example, a state of being arranged in a grid pattern, a state of being arranged in a staggered grid, or a checkerboard pattern.

[0128] The present disclosure includes, for example, the following configurations.

[0129] (Configuration 1) A mask substrate having a recess disposed on a facing surface facing a substrate and a peripheral portion surrounding the recess, a protrusion disposed on the mask substrate, and having The bottom of the recess has a first opening and a second opening adjacent to each other in a first direction, a third opening and a fourth opening adjacent to the first opening and the second opening in the first direction and adjacent to the first opening and the second opening in a second direction intersecting the first direction, and a beam portion disposed between the first opening and the second opening, between the third opening and the fourth opening, between the first opening and the third opening, between the second opening and the fourth opening, and between the first opening and the fourth opening. The protrusion is disposed on the upper surface of the beam portion. In a plan view with respect to the upper surface, when a region combining the first opening to the fourth opening and the beam portion is defined as a first region, and a region having the same area and the same outer shape as the first region in the peripheral portion is defined as a second region, a vapor deposition mask, characterized in that an area where the facing surface of the second region contacts a parallel plane parallel to the facing surface is larger than an area where the facing surface of the first region contacts the parallel plane.

[0130] (Configuration 2) The vapor deposition mask of Configuration 1, wherein a frictional force of the facing surface of the second region with respect to the parallel plane is larger than a frictional force of the facing surface of the first region with respect to the parallel plane.

[0131] (Configuration 3) The vapor deposition mask of Configuration 1 or 2, wherein a tip of the protrusion and a portion having the facing surface of the peripheral portion have different materials.

[0132] (Configuration 4) The vapor deposition mask of any one of Configurations 1 to 3, wherein the tip of the protrusion has resin and the facing surface of the peripheral portion is metal.

[0133] (Configuration 5) In a cross-section passing through the protruding portion and the beam portion, The vapor deposition mask according to any one of Configurations 1 to 4, wherein a distance from an upper surface of the recess to an upper surface of the protruding portion in a direction perpendicular to the opposing surface is greater than a distance from the upper surface of the recess to an upper surface of the peripheral portion.

[0134] (Configuration 6) The first opening is adjacent to the third opening in the second direction, The second opening is adjacent to the fourth opening in the second direction, The vapor deposition mask according to any one of Configurations 1 to 5, wherein the protruding portion is disposed in a portion between the first opening and the fourth opening of the beam portion.

[0135] (Configuration 7) The vapor deposition mask according to any one of Configurations 1 to 6, wherein in the plan view, the beam portion has a lattice shape within the recess.

[0136] (Configuration 8) Having a plurality of protruding portions on an upper surface of the beam portion, The vapor deposition mask of Configuration 7, wherein the protruding portion and the plurality of protruding portions are respectively disposed at any of intersections of the lattice shape.

[0137] (Configuration 9) The vapor deposition mask according to any one of Configurations 1 to 8, wherein the peripheral portion has different materials at the bottom and the top.

[0138] (Configuration 10) The vapor deposition mask according to any one of Configurations 1 to 9, wherein a tip of the protruding portion and a portion having the opposing surface of the peripheral portion have the same material.

[0139] (Configuration 11) A mask substrate having a recess disposed on an opposing surface facing the substrate and a peripheral portion surrounding the recess, A plurality of protruding portions disposed on the mask substrate, And having, The bottom of the recess has a plurality of openings and a beam portion disposed between the plurality of openings. The plurality of protrusions are arranged on the upper surface of the beam portion, The vapor deposition mask is characterized in that no protrusion is arranged on the opposing surface of the peripheral portion that faces the substrate.

[0140] (Configuration 12) The vapor deposition mask of Configuration 11, in which the tips of the plurality of protrusions and the portion having the opposing surface of the peripheral portion are made of different materials.

[0141] (Configuration 13) The vapor deposition mask of Configuration 11 or 12, in which the tips of the plurality of protrusions have resin and the opposing surface of the peripheral portion is metal.

[0142] (Configuration 14) In a cross-section passing through at least one of the plurality of protrusions and the beam portion, The vapor deposition mask of any one of Configurations 11 to 13, in which the distance from the upper surface of the recess to the upper surface of at least one of the protrusions in the direction perpendicular to the opposing surface is greater than the distance from the upper surface of the recess to the upper surface of the peripheral portion.

[0143] (Configuration 15) The plurality of openings have a first opening and a second opening adjacent to each other in a first direction, and a third opening and a fourth opening adjacent to each other in the first direction, The first opening is adjacent to the third opening in a second direction intersecting the first direction, The second opening is adjacent to the fourth opening in the second direction, One of the plurality of protrusions is arranged in a portion between the first opening and the fourth opening of the beam portion. The vapor deposition mask of any one of Configurations 11 to 14.

[0144] (Configuration 16) In a plan view with respect to the upper surface, the beam portion has a lattice shape in the recess. The vapor deposition mask of any one of Configurations 11 to 15 (Configuration 17) The plurality of protrusions are respectively arranged at any of the intersections of the lattice shapes. The vapor deposition mask of Configuration 16.

[0145] (Configuration 18) The peripheral part is a vapor deposition mask of any one of Configurations 11 to 17 having different materials at the bottom and the top.

[0146] (Configuration 19) The tip of the protrusion and the part having the facing surface of the peripheral part are vapor deposition masks of any one of Configurations 11 to 18 having the same material.

[0147] (Method 1) A method for manufacturing an organic EL element including at least an organic layer between a first electrode and a second electrode, a step of opposing a vapor deposition mask of Configuration 1 or 11 and a substrate, a step of aligning the substrate and the vapor deposition mask, a step of bringing the substrate and the vapor deposition mask into contact with each other, a step of forming a desired vapor deposition pattern by vapor-depositing a vapor deposition material through an opening of the vapor deposition mask on the substrate, and including, In the step of bringing the substrate and the vapor deposition mask into contact with each other, a method for manufacturing an organic EL element in which the substrate or the vapor deposition mask is arranged so that a part of the facing surface of the protrusion and the peripheral part abuts on the substrate.

Example

[0148] Hereinafter, the configuration examples of the present disclosure will be described with reference to examples and comparative examples. Note that the vapor deposition mask according to the present disclosure is not limited to these examples at all. Regarding the vapor deposition masks shown in Examples 1 to 3 and Comparative Examples 1 and 2 below, vapor deposition of a vapor deposition material was performed on a substrate using each vapor deposition mask, and the positional deviation of the formed film pattern was evaluated.

[0149] [Example 1] As the vapor deposition mask of Example 1, vapor deposition was performed using the vapor deposition mask 100 shown in FIG. 1. The vapor deposition mask 100 exemplified here uses a vapor deposition mask 100 created by processing a metal plate. As an example, the vapor deposition mask 100 is a metal mask with an outer diameter of the mask of 450 × 450 mm and a thickness of 0.5 mm. The metal of the metal mask in this example uses an Invar material.

[0150] Also, as shown in FIG. 1(b), in a plan view of the surface of the vapor deposition mask 800 facing the substrate 110, the area of the concave portion 104 is 5300 mm 2 And the protruding portion 105 disposed in the concave portion is a convex portion of resin formed by coating with a dispenser, and is disposed at the intersection of the beam portions 108 within the concave portion 104. The resin of the convex portion formed in this example uses a polyimide resin.

[0151] The peripheral portion 107 of the vapor deposition mask 100 contacts the substrate 110, and the contact area is 1700 mm 2 And the ratio of the contact area of the peripheral portion 107 with respect to the substrate 110 is 25%.

[0152] [Example 2] As the vapor deposition mask according to Example 2, vapor deposition was performed using the vapor deposition mask 300 shown in FIG. 3 of Embodiment 2. That is, the vapor deposition mask used in Example 2 is the same as the vapor deposition mask 100 according to Example 1 except that the material of the portion in contact with the substrate in the peripheral portion is resin. Therefore, the portion in contact with the substrate in the peripheral portion is a polyimide resin.

[0153] [Example 3] As the vapor deposition mask according to Example 3, vapor deposition was performed using the vapor deposition mask 400 shown in FIG. 4 of Embodiment 2. That is, the vapor deposition mask used in Example 3 is the same as the vapor deposition mask 100 according to Example 1 except that the protruding portion 405 is the same Invar as the portion in contact with the substrate 110 in the peripheral portion 407.

[0154] [Comparative Example 1] Next, Comparative Example 1 of the vapor deposition mask of the present disclosure will be described. As shown in FIG. 13(a), in the plan view of the vapor deposition mask 1200A according to Comparative Example 1, there is no recess surrounding the opening 1203. The structure 1205 arranged to surround the opening 1203 was made into a convex portion of resin formed by coating with a dispenser.

[0155] The vapor deposition mask 1200A is the same as the vapor deposition mask 100 of Example 1 except that no recess is formed to surround the opening 1203.

[0156] [Comparative Example 2] Further, as shown in FIG. 13(b), in the plan view of the vapor deposition mask 1200B according to Comparative Example 2, there is no recess surrounding the opening 1203, and the protrusions 1205 are arranged on the entire opposing surface facing the substrate 110.

[0157] The vapor deposition mask 1200B is the same as the vapor deposition mask 100 of Example 1 except that no recess is formed to surround the opening 1203.

[0158] [Method and Result of Determining Film Deposition Position Deviation] Here, the evaluation of the deviation of the film deposition position during vapor deposition will be described with reference to FIGS. 14(a) and 14(b). FIGS. 14(a) and 14(b) are plan schematic views of the state where the vapor deposition pattern 1409 is formed on the substrate 1410 after vapor deposition using the vapor deposition mask. In the figure, the desired vapor deposition position is shown as the vapor deposition position 1406.

[0159] As shown in FIG. 14(a), when a vapor deposition material is vapor-deposited on the effective region of the substrate 1410, a vapor deposition pattern 1409 is vapor-deposited on the desired vapor deposition position 1406. In such a case, the determination result of the deviation of the film formation position is evaluated as "○" (good). On the other hand, as shown in FIG. 14(b), when the vapor deposition material is vapor-deposited on the substrate 1410, the vapor deposition pattern 1409 is vapor-deposited while being deviated from above the desired vapor deposition position 1406. In this embodiment, considering the processing accuracy of the opening and the alignment system of the substrate and the vapor deposition mask, when the deviation amount 1404 is 10 μm or more, the determination result of the deviation of the film formation position is evaluated as "×" (bad).

[0160] Next, the results of forming a vapor deposition pattern using the vapor deposition masks shown in Example 1 to Example 3 and Comparative Example 1 and Comparative Example 2 are shown.

[0161] As a result of vapor-depositing an organic material of a vapor deposition material on the substrate 110 using the vapor deposition mask 100 according to Example 1, the deviation of the film formation position was less than 10 μm, and the determination result was "〇" (good). At this time, regarding the vapor deposition pattern vapor-deposited through the opening 103 of all the recesses 104 in the vapor deposition mask 100 and the desired vapor deposition position of the substrate 110, the deviation of the film formation position was less than 10 μm.

[0162] As a result of vapor-depositing an organic material of a vapor deposition material on the substrate using the vapor deposition mask 200 according to Example 2, the deviation of the film formation position was less than 10 μm, and the determination result was "〇" (good). Also at this time, similar to Example 1, regarding the vapor deposition pattern vapor-deposited through the opening 203 of all the recesses 204 in the vapor deposition mask 200 and the desired vapor deposition position of the substrate 110, the deviation of the film formation position was less than 10 μm.

[0163] As a result of vapor-depositing an organic material of a vapor deposition material on the substrate using the vapor deposition mask 300 according to Example 3, the deviation of the film formation position was less than 10 μm, and the determination result was "〇" (good). Also at this time, similar to Example 1 and Example 2, regarding the vapor deposition pattern vapor-deposited through the opening 303 of all the recesses 304 in the vapor deposition mask 300 and the desired vapor deposition position of the substrate 110, the deviation of the film formation position was less than 10 μm.

[0164] Next, the results of depositing an organic material on a substrate using the vapor deposition mask 1200A according to Comparative Example 1 are shown. For the desired deposition position on the substrate 1210 and the deposition pattern deposited through the opening in the vapor deposition mask 1200A at this time, the deviation in the film formation position was 10 μm or more. Therefore, the determination result of the vapor deposition film formation was "×" (defective).

[0165] As a result of depositing an organic material on a substrate using the vapor deposition mask 1200B according to Comparative Example 2, for the desired deposition position on the substrate 1210 and the deposition pattern deposited through the opening in the vapor deposition mask 1200B, the deviation in the film formation position was 10 μm or more. Therefore, the determination result of the vapor deposition film formation was "×" (defective).

[0166] Table 1 shows the determination results regarding the deviation in the film formation position of the results of vapor deposition using the vapor deposition masks of Examples 1 to 3 and the vapor deposition masks of Comparative Examples 1 and 2.

[0167]

Table 1

[0168] From these results, it was found that the masks of Examples 1 to 3 can preferably reduce the deviation in the film formation position of the deposition pattern during film formation by vacuum deposition as compared with the vapor deposition masks shown in Comparative Examples 1 and 2.

Explanation of Reference Numerals

[0169] 100 Vapor deposition mask 101 Mask substrate 103 Opening 104 Concave portion 105 Protrusion 107 Peripheral portion 108 Beam portion

Claims

1. A mask substrate having a recess disposed on a facing surface facing a substrate and a peripheral portion surrounding the recess, and a protrusion disposed on the mask substrate, characterized in that: The bottom of the recess has a first opening and a second opening adjacent to each other in a first direction, and a third opening and a fourth opening adjacent to each other in the first direction and adjacent to the first opening and the second opening in a second direction intersecting the first direction, and beam portions disposed between the first opening and the second opening, between the third opening and the fourth opening, between the first opening and the third opening, between the second opening and the fourth opening, and between the first opening and the fourth opening; The protrusion is disposed on the upper surface of the beam portion; In a plan view with respect to the upper surface, when a region combining the first opening to the fourth opening and the beam portion is defined as a first region, and a region having the same area and the same outer shape as the first region in the peripheral portion is defined as a second region, a vapor deposition mask, wherein an area where the facing surface of the second region contacts a parallel plane parallel to the facing surface is larger than an area where the facing surface of the first region contacts the parallel plane.

2. The vapor deposition mask according to claim 1, wherein a frictional force of the facing surface of the second region with respect to the parallel plane is greater than a frictional force of the facing surface of the first region with respect to the parallel plane.

3. The vapor deposition mask according to claim 1, wherein a tip of the protrusion and a portion of the peripheral portion having the facing surface are made of different materials.

4. The vapor deposition mask according to claim 1, wherein the tip of the protrusion has a resin, and the facing surface of the peripheral portion is a metal.

5. In a cross-section passing through the protrusion and the beam portion, the vapor deposition mask according to claim 1, wherein a distance from the upper surface of the recess to the upper surface of the protrusion in a direction perpendicular to the facing surface is greater than a distance from the upper surface of the recess to the upper surface of the peripheral portion.

6. The first opening is adjacent to the third opening in the second direction, the second opening is adjacent to the fourth opening in the second direction, and the protrusion is disposed at a portion between the first opening and the fourth opening of the beam portion. The vapor deposition mask according to claim 1.

7. The vapor deposition mask according to claim 1, wherein in the plan view, the beam portion has a lattice shape in the recess.

8. Having a plurality of protrusions on the upper surface of the beam portion, and the protrusion and the plurality of protrusions are respectively disposed at any of intersections of the lattice shape. The vapor deposition mask according to claim 7.

9. The vapor deposition mask according to claim 1, wherein the peripheral portion has different materials at the bottom and the top.

10. The vapor deposition mask according to claim 1, wherein the tip of the protrusion and the portion of the peripheral portion having the facing surface have the same material.

11. A mask substrate having a recess disposed on a facing surface facing the substrate and a peripheral portion surrounding the recess, a plurality of protrusions disposed on the mask substrate, and having, wherein the bottom of the recess has a plurality of openings and a beam portion disposed between the plurality of openings, the plurality of protrusions are disposed on the upper surface of the beam portion, and the vapor deposition mask is characterized in that no protrusion is disposed on the facing surface of the peripheral portion facing the substrate.

12. The vapor deposition mask according to claim 11, wherein the tip of the plurality of protrusions and the portion of the peripheral portion having the facing surface have different materials.

13. The vapor deposition mask according to claim 11, wherein the tip of the plurality of protrusions has a resin and the facing surface of the peripheral portion is a metal.

14. In a cross section passing through at least one of the plurality of protrusions and the beam portion, the distance from the upper surface of the recess to the upper surface of the at least one protrusion in a direction perpendicular to the facing surface is greater than the distance from the upper surface of the recess to the upper surface of the peripheral portion, according to claim 11. The vapor deposition mask described.

15. The plurality of openings have a first opening and a second opening adjacent to each other in a first direction, and a third opening and a fourth opening adjacent to each other in the first direction, the first opening is adjacent to the third opening in a second direction intersecting the first direction, the second opening is adjacent to the fourth opening in the second direction, and one of the plurality of protrusions is disposed in a portion between the first opening and the fourth opening of the beam portion, according to claim 11. The vapor deposition mask described.

16. The vapor deposition mask according to claim 11, wherein in a plan view with respect to the upper surface, the beam portion has a lattice shape in the recess.

17. The vapor deposition mask according to claim 16, wherein the plurality of protrusions are each disposed at any of the intersections of the lattice shape.

18. The vapor deposition mask according to claim 11, wherein the peripheral portion has different materials at the bottom and the top.

19. The vapor deposition mask according to claim 11, wherein the tip of the protrusion and the portion of the peripheral portion having the facing surface have the same material.

20. A method for manufacturing an organic EL element including at least an organic layer between a first electrode and a second electrode, A step of opposing the vapor deposition mask according to claim 1 or 11 to the substrate; A step of aligning the substrate and the vapor deposition mask; A step of bringing the substrate into contact with the vapor deposition mask; A step of forming a desired vapor deposition pattern by vapor-depositing a vapor deposition material through an opening of the vapor deposition mask on the substrate, and In the step of bringing the substrate into contact with the vapor deposition mask, a method for manufacturing an organic EL element in which the substrate or the vapor deposition mask is arranged such that a part of the opposing surfaces of the protrusion and the peripheral portion come into contact with the substrate.

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