Semiconductor device

Abstract

To provide a semiconductor device, characteristics of which can be improved.SOLUTION: A semiconductor device includes a first electrode, a second electrode, a third electrode containing silicon, a semiconductor member, and a first insulation member. The third electrode includes a first electrode region and a second electrode region. The semiconductor member includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer contains Alx1Ga1-x1N (0≤x1<1). The second semiconductor layer contains Alx2Ga1-x2N (0<x2≤1, x1<x2). The first electrode region and the second electrode region satisfy a first condition or a second condition. In the first condition, the second electrode region contains a first element including at least one selected from a group composed of P and As and the first electrode region does not contain the first element. In the second condition, a second concentration of the first element in the second electrode region is higher than a first concentration of the first element in the first electrode region.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] Embodiments of the present invention relate to semiconductor devices.

Background Art

[0002] For example, in semiconductor devices such as transistors, improvement of characteristics is desired.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] Embodiments of the present invention provide a semiconductor device capable of improving characteristics.

Means for Solving the Problems

[0005] According to an embodiment of the present invention, a semiconductor device includes a first electrode, a second electrode, a third electrode containing silicon, a semiconductor member, and a first insulating member. The position of the third electrode in the first direction from the first electrode to the second electrode is between the position of the first electrode in the first direction and the position of the second electrode in the first direction. The third electrode includes a first electrode region and a second electrode region. The semiconductor member includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is Al x1 Ga 1-x1It includes N(0≦x1<1). The first semiconductor layer includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. The second direction from the first partial region to the first electrode intersects the first direction. The direction from the second partial region to the second electrode is along the second direction. The direction from the third partial region to the first electrode region is along the second direction. The position of the fourth partial region in the first direction is between the position of the first partial region in the first direction and the position of the third partial region in the first direction. The position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and the position of the second partial region in the first direction. The second semiconductor layer contains Al x2 Ga 1-x2 It includes N(0<x2≦1, x1<x2). The second semiconductor layer includes a first semiconductor portion and a second semiconductor portion. The direction from the fourth partial region to the first semiconductor portion is along the second direction. The direction from the fifth partial region to the second semiconductor portion is along the second direction. The first electrode region is between the first semiconductor portion and the second semiconductor portion in the first direction. A part of the first semiconductor portion is provided between the fourth partial region and the second electrode region in the second direction. The first insulating member is provided between the semiconductor member and the third electrode. The first electrode region and the second electrode region satisfy a first condition or a second condition. In the first condition, the second electrode region contains a first element including at least one selected from the group consisting of P and As, and the first electrode region does not contain the first element. In the second condition, the second concentration of the first element in the second electrode region is higher than the first concentration of the first element in the first electrode region.

Brief Description of the Drawings

[0006]

Figure 1

Embodiments for Carrying Out the Invention

[0007] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the ratio of the sizes between parts, etc. are not necessarily the same as the actual ones. Even when representing the same part, there are cases where the dimensions and ratios are represented differently in the drawings. In the present specification and each figure, elements similar to those described above with respect to the previously shown figures are denoted by the same reference numerals, and detailed descriptions thereof are omitted as appropriate.

[0008] (First Embodiment) FIG. 1 is a schematic cross-sectional view illustrating a semiconductor device according to the first embodiment. As shown in FIG. 1, the semiconductor device 110 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a semiconductor member 10M, and a first insulating member 41.

[0009] Let the first direction D1 from the first electrode 51 to the second electrode 52 be the X-axis direction. Let one direction perpendicular to the X-axis direction be the Y-axis direction. Let the direction perpendicular to the X-axis direction and the Z-axis direction be the Y-axis direction.

[0010] The third electrode 53 contains silicon. The third electrode 53 may contain, for example, polysilicon. In the third electrode 53, silicon (polysilicon) may contain impurities that cause conductivity.

[0011] The position of the third electrode 53 in the first direction D1 is between the position of the first electrode 51 in the first direction D1 and the position of the second electrode 52 in the first direction D1. The third electrode 53 includes a first electrode region 53a and a second electrode region 53b. The third electrode 53 may further include a third electrode region 53c.

[0012] The semiconductor member 10M includes a first semiconductor layer 10 and a second semiconductor layer 20. The first semiconductor layer 10 contains Al x1 Ga 1-x1 N (0 ≦ x1 < 1). The composition ratio x1 may be, for example, 0 or more and 0.10 or less. The first semiconductor layer 10 contains, for example, GaN. The second semiconductor layer 20 contains Al x2Ga 1-x2 It contains N(0 < x2 ≤ 1, x1 < x2). The composition ratio x2 may be, for example, not less than 0.15 and not more than 0.45. The second semiconductor layer 20 contains, for example, AlGaN.

[0013] The first semiconductor layer 10 includes a first partial region 11, a second partial region 12, a third partial region 13, a fourth partial region 14, and a fifth partial region 15. The second direction D2 from the first partial region 11 to the first electrode 51 intersects the first direction D1. The second direction D2 is, for example, the Z-axis direction.

[0014] The direction from the second partial region 12 to the second electrode 52 is along the second direction D2. The direction from the third partial region 13 to the first electrode region 53a is along the second direction D2. The region overlapping the first electrode 51 in the second direction D2 corresponds to the first partial region 11. The region overlapping the second electrode 52 in the second direction D2 corresponds to the second partial region 12. The region overlapping the first electrode region 53a in the second direction D2 corresponds to the third partial region 13.

[0015] The first electrode 51, the second electrode 52, and the third electrode 53 may extend along the third direction D3. The third direction D3 intersects the plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the Y-axis direction.

[0016] The position of the fourth partial region 14 in the first direction D1 is between the position of the first partial region 11 in the first direction D1 and the position of the third partial region 13 in the first direction D1. The position of the fifth partial region 15 in the first direction D1 is between the position of the third partial region 13 in the first direction D1 and the position of the second partial region 12 in the first direction D1. In the first partial region 11, the second partial region 12, the third partial region 13, the fourth partial region 14, and the fifth partial region 15, the boundaries between them may be clear or unclear.

[0017] The second semiconductor layer 20 includes a first semiconductor portion 21 and a second semiconductor portion 22. The direction from the fourth partial region 14 to the first semiconductor portion 21 is along the second direction D2. The direction from the fifth partial region 15 to the second semiconductor portion 22 is along the second direction D2.

[0018] The first electrode region 53a is provided between the first semiconductor portion 21 and the second semiconductor portion 22 in the first direction D1. A part of the first semiconductor portion 21 is provided between the fourth partial region 14 and the second electrode region 53b in the second direction D2.

[0019] The first insulating member 41 is provided between the semiconductor member 10M and the third electrode 53.

[0020] The first electrode region 53a and the second electrode region 53b satisfy the following first condition or second condition. In the first condition, the second electrode region 53b contains a first element including at least one selected from the group consisting of P and As. In the first condition, the first electrode region 53a does not contain the first element. The first element functions as, for example, an n-type impurity.

[0021] In the second condition, the second concentration of the first element in the second electrode region 53b is higher than the first concentration of the first element in the first electrode region 53a.

[0022] For example, the first electrode 51 is electrically connected to the first semiconductor portion 21. The second electrode 52 is electrically connected to the second semiconductor portion 22.

[0023] For example, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be, for example, a potential based on the potential of the first electrode 51. The first electrode 51 is, for example, a source electrode. The second electrode 52 is, for example, a drain electrode. The third electrode 53 is, for example, a gate electrode. The semiconductor device 110 is, for example, a transistor.

[0024] The first semiconductor layer 10 includes a region facing the second semiconductor layer 20. A carrier region 10C is formed in this region. The carrier region 10C is, for example, a two-dimensional electron gas. The semiconductor device 110 is, for example, a HEMT (High Electron Mobility Transistor).

[0025] In this example, the distance along the first direction D1 between the first electrode 51 and the third electrode 53 is shorter than the distance along the first direction D1 between the third electrode 53 and the second electrode 52. Stable operation is likely to be obtained.

[0026] As described above, the first electrode region 53a is provided between the first semiconductor portion 21 and the second semiconductor portion 22 in the first direction D1. The third electrode 53 is, for example, a recessed gate electrode. For example, the second semiconductor layer 20 is not provided under the first electrode region 53a. Thereby, a carrier region 10C is not substantially formed under the first electrode region 53a. Thereby, a high threshold value is likely to be obtained. A part of the first electrode region 53a may be provided between the fourth partial region 14 and the fifth partial region 15 in the first direction D1.

[0027] For example, the first electrode region 53a is a recess region. The second electrode region 53b is, for example, a protective region. By providing the protective region, the third electrode 53 can be stably formed. By providing the protective region, for example, the leakage current of the device can be reduced. For example, current collapse can be improved.

[0028] As described above, in the embodiment, the first electrode region 53a and the second electrode region 53b satisfy the above first condition or second condition. For example, the recess region (first electrode region 53a) does not contain n-type impurities. On the other hand, the protective region (second electrode region 53b) contains n-type impurities. The potential locally changes based on the n-type impurities. Thereby, a carrier region 10C is likely to be formed under the protective region. For example, the carrier concentration is likely to be high under the protective region. Thereby, a low on-resistance is likely to be obtained. According to the embodiment, a semiconductor device capable of improving characteristics can be provided. For example, since the protective region (second electrode region 53b) contains n-type impurities, a configuration in which the length of the third electrode 53 (the length in the first direction D1) is shortened can be obtained. For example, in the protective region containing n-type impurities, the carrier concentration is likely to be higher than in the case where no n-type impurities are contained. A low on-resistance is likely to be obtained.

[0029] In an embodiment, the third electrode 53 may further include a third electrode region 53c. A part of the second semiconductor portion 22 is provided between the fifth partial region 15 and the third electrode region 53c in the second direction D2. The third electrode region 53c contains a first element. Alternatively, the third concentration of the first element in the third electrode region 53c is higher than the first concentration. The third electrode region 53c also corresponds to a shielding region. By including the first element in the third electrode region 53c, a lower on-resistance is more easily obtained.

[0030] The third electrode 53 may include a second element selected from the group consisting of B and Al. The second element functions as, for example, a p-type impurity. For example, the first electrode region 53a substantially does not contain the first element and contains the second element. Thereby, for example, a high threshold voltage can be obtained more stably.

[0031] In one example, the concentration of the second element in the third electrode 53 is 1×10 17 cm -3 or more and 1×10 21 cm -3 or less. A high threshold voltage is easily obtained. A low gate resistance is obtained. Stable switching characteristics are easily obtained. As will be described later, the concentration of the second element in the third electrode 53 may vary.

[0032] As described above, the concentration of the first element is not uniform in the third electrode 53. In one example, at least one of the second concentration in the second electrode region 53b and the third concentration in the third electrode region 53c may be 10 times or more and 1000 times or less the first concentration in the first electrode region 53a.

[0033] For example, at least one of the second concentration and the third concentration may be 1×10 16 cm -3 or more and 1×10 21 cm -3 or less. For example, the first concentration may be less than 1×10 16 cm -3 or less.

[0034] As shown in FIG. 1, the third electrode 53 may further include a fourth electrode region 53d. The fourth electrode region 53d is provided between the second electrode region 53b and the third electrode region 53c in the first direction D1. In one example, the fourth electrode region 53d contains a first element. Alternatively, the fourth concentration of the first element in the fourth electrode region 53d is higher than the first concentration in the first electrode region 53a.

[0035] In another example, the fourth electrode region 53d does not contain the first element. Alternatively, the fourth concentration of the first element in the fourth electrode region 53d is lower than the second concentration in the second electrode region 53b. The fourth concentration is lower than the third concentration in the third electrode region 53c.

[0036] For example, the first electrode region 53a may contain a second element (including at least one selected from the group consisting of B and Al). It is easy to obtain a high threshold voltage. In one example in this case, for example, the second electrode region 53b does not contain the second element. Alternatively, the concentration of the second element in the second electrode region 53b may be lower than the concentration of the second element in the first electrode region 53a. In this case, for example, the second concentration of the first element in the second electrode region 53b may be higher than the concentration of the second element in the second electrode region 53b. It is easy to obtain a lower on-current.

[0037] In one example where the first electrode region 53a contains a second element (including at least one selected from the group consisting of B and Al), the fourth electrode region 53d does not contain the second element. Alternatively, the concentration of the second element in the fourth electrode region 53d may be lower than the concentration of the second element in the first electrode region 53a.

[0038] For example, the fourth concentration of the first element in the fourth electrode region 53d may be higher than the concentration of the second element in the fourth electrode region 53d. It is easy to obtain a low gate resistance. The switching characteristics are likely to be stable.

[0039] As shown in FIG. 1, for example, the first insulating member 41 includes a first insulating region 41a, a second insulating region 41b, and a third insulating region 41c. The first insulating region 41a is provided between the third partial region 13 and the first electrode region 53a in the second direction D2. The second insulating region 41b is provided between the first semiconductor portion 21 and the first electrode region 53a in the first direction D1. The third insulating region 41c is provided between the first electrode region 53a and the second semiconductor portion 22 in the first direction D1. At least a part of these insulating regions functions as a gate insulating film.

[0040] The first insulating member 41 may further include a fourth insulating region 41d and a fifth insulating region 41e. At least a part of the fourth insulating region 41d is provided between the first semiconductor portion 21 and the second electrode region 53b in the second direction D2. At least a part of the fifth insulating region 41e is provided between the second semiconductor portion 22 and the third electrode region 53c in the second direction D2.

[0041] The first insulating member 41 includes, for example, silicon and oxygen. The first insulating member 41 includes, for example, silicon oxide. Stable insulation can be obtained.

[0042] As shown in FIG. 1, the semiconductor device 110 may further include a first compound member 31. The first compound member 31 contains Al z1 Ga 1-z1 N (0 <z1 ≦ 1, x2 <z1). The composition ratio z1 may be, for example, 0.8 or more and 1 or less. The first compound member 31 may include, for example, AlN. The first compound member 31 includes a first compound region 31a. The first compound region 31a is provided between the third partial region 13 and the first insulating region 41a. By providing the first compound region 31a, higher mobility can be obtained. A lower on-resistance can be obtained.

[0043] The first compound member 31 may further include a second compound region 31b and a third compound region 31c. The second compound region 31b is provided between the first semiconductor portion 21 and the second insulating region 41b. The third compound region 31c is provided between the third insulating region 41c and the second semiconductor portion 22. Between the second compound region 31b and the first semiconductor portion 21, it is difficult for fixed charges to be generated. Between the third compound region 31c and the second semiconductor portion 22, it is difficult for fixed charges to be generated. It is easy to obtain a high threshold voltage. A lower on-resistance can be obtained. The second compound region 31b and the third compound region 31c make it easy to suppress the diffusion of the second element into the second semiconductor portion 22 during the manufacturing process. It is easy to obtain a stable device.

[0044] The first compound member 31 may further include a fourth compound region 31d and a fifth compound region 31e. The fourth compound region 31d is provided between the first semiconductor portion 21 and the fourth insulating region 41d in the second direction D2. The fifth compound region 31e is provided between the second semiconductor portion 22 and the fifth insulating region 41e in the second direction D2. By providing the fourth compound region 31d and the fifth compound region 31e, for example, it is easy to suppress the diffusion of the first element into the second semiconductor layer 20 during the manufacturing process. It is easy to obtain a stable device.

[0045] The semiconductor device 110 may further include a second insulating member 42. The second insulating member 42 includes a first insulating portion 42a and a second insulating portion 42b. The first semiconductor portion 21 is provided between the fourth partial region 14 and the first insulating portion 42a in the second direction D2. In this example, the first semiconductor portion 21 is provided between the fourth partial region 14 and the fourth compound region 31d in the second direction D2. The second semiconductor portion 22 is provided between the fifth partial region 15 and the second insulating portion 42b in the second direction D2. In this example, the second semiconductor portion 22 is provided between the fifth partial region 15 and the fifth compound region 31e in the second direction D2.

[0046] The second insulating member 42 contains, for example, nitrogen. The second insulating member 42 contains, for example, nitrogen and silicon. By providing the second insulating member 42, for example, the second semiconductor layer 20 is stabilized. The second insulating member 42 functions, for example, as a protective film.

[0047] The semiconductor device 110 may further include a substrate 10S and a nitride layer 10B. The substrate 10S is, for example, a substrate. The substrate 10S may be, for example, a silicon substrate or the like. The substrate 10S may also be, for example, a GaN substrate or the like. The nitride layer 10B is provided between the substrate 10S and the semiconductor member 10M. The nitride layer 10B is, for example, a buffer layer. The nitride layer 10B contains, for example, Ga, Al, and nitrogen. For example, the nitride layer 10B is provided on the substrate 10S. The first semiconductor layer 10 is provided on the nitride layer 10B. The second semiconductor layer 20 is provided on the first semiconductor layer 10.

[0048] In an embodiment, the first element in the third electrode 53 may be introduced, for example, by ion implantation or the like. For example, ion implantation using a mask or the like may be used. By controlling the depth in ion implantation, a concentration distribution of the first element in the third electrode 53 may be obtained.

[0049] The second element in the third electrode 53 may be introduced into the third electrode 53 by forming a silicon film or the like containing the second element. The second element may be introduced into the third electrode 53 by ion implantation.

[0050] In an embodiment, information regarding the composition of a material is obtained by, for example, SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy dispersive X-ray spectroscopy). In an embodiment, information regarding length and thickness is obtained by, for example, electron microscope observation.

[0051] An embodiment may include the following technical solutions. (Technical solution 1) A first electrode, A second electrode, A third electrode containing silicon, wherein the position of the third electrode in the first direction from the first electrode to the second electrode is between the position of the first electrode in the first direction and the position of the second electrode in the first direction, and the third electrode includes a first electrode region and a second electrode region, the third electrode and A semiconductor member including a first semiconductor layer and a second semiconductor layer, The first semiconductor layer is Al x1 Ga 1-x1 N (0≦x1<1), the first semiconductor layer includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, the second direction from the first partial region to the first electrode intersects the first direction, the direction from the second partial region to the second electrode is along the second direction, the direction from the third partial region to the first electrode region is along the second direction, the position of the fourth partial region in the first direction is between the position of the first partial region in the first direction and the position of the third partial region in the first direction, the position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and the position of the second partial region in the first direction, The second semiconductor layer is Al x2 Ga 1-x2 N (0<x2≦1, x1<x2), the second semiconductor layer includes a first semiconductor part and a second semiconductor part, the direction from the fourth partial region to the first semiconductor part is along the second direction, the direction from the fifth partial region to the second semiconductor part is along the second direction, the first electrode region is between the first semiconductor part and the second semiconductor part in the first direction, and a part of the first semiconductor part is provided between the fourth partial region and the second electrode region in the second direction, the semiconductor member and A first insulating member provided between the semiconductor member and the third electrode, Comprising, The first electrode region and the second electrode region satisfy a first condition or a second condition, In the first condition, the second electrode region contains a first element selected from the group consisting of P and As, and the first electrode region does not contain the first element. In the second condition, a second concentration of the first element in the second electrode region is higher than a first concentration of the first element in the first electrode region, a semiconductor device.

[0052] (Technical solution 2) The third electrode further includes a third electrode region. A part of the second semiconductor portion is provided between the fifth partial region and the third electrode region in the second direction. The semiconductor device according to Technical solution 1, wherein the third electrode region contains the first element, or a third concentration of the first element in the third electrode region is higher than the first concentration.

[0053] (Technical solution 3) The third electrode further includes a fourth electrode region. The fourth electrode region is provided between the second electrode region and the third electrode region in the first direction. The semiconductor device according to Technical solution 2, wherein the fourth electrode region contains the first element, or a fourth concentration of the first element in the fourth electrode region is higher than the first concentration.

[0054] (Technical solution 4) The third electrode further includes a fourth electrode region. The fourth electrode region is provided between the second electrode region and the third electrode region in the first direction. The semiconductor device according to Technical solution 2, wherein the fourth electrode region does not contain the first element, or a fourth concentration of the first element in the fourth electrode region is lower than the second concentration and lower than the third concentration.

[0055] (Technical solution 5) The first electrode region contains a second element selected from the group consisting of B and Al. The semiconductor device according to Technical Solution 3 or 4, wherein the second electrode region does not contain the second element, or the concentration of the second element in the second electrode region is lower than the concentration of the second element in the first electrode region.

[0056] (Technical Solution 6) The semiconductor device according to Technical Solution 5, wherein the second concentration is higher than the concentration of the second element in the second electrode region.

[0057] (Technical Solution 7) The first electrode region contains a second element including at least one selected from the group consisting of B and Al. The semiconductor device according to Technical Solution 3 or 4, wherein the fourth electrode region does not contain the second element, or the concentration of the second element in the fourth electrode region is lower than the concentration of the second element in the first electrode region.

[0058] (Technical Solution 8) The semiconductor device according to Technical Solution 7, wherein the fourth concentration is higher than the concentration of the second element in the fourth electrode region.

[0059] (Technical Solution 9) The semiconductor device according to any one of Technical Solutions 1 to 4, wherein the third electrode contains a second element including at least one selected from the group consisting of B and Al.

[0060] (Technical Solution 10) The concentration of the second element in the third electrode is 1×10 17 cm -3 or more and 1×10 21 cm -3 or less. The semiconductor device according to Technical Solution 9.

[0061] (Technical Solution 11) The semiconductor device according to any one of Technical Solutions 1 to 10, wherein the second concentration is 10 times or more and 1000 times or less of the first concentration.

[0062] (Technical Solution 12) The second concentration is 1×1016 cm -3 1×10 or more 21 cm -3 The semiconductor device according to any one of Technical Proposals 1 to 11, which is below the above.

[0063] (Technical Proposal 13) The first concentration is less than 1×10 16 cm -3 The semiconductor device according to any one of Technical Proposals 1 to 12.

[0064] (Technical Proposal 14) The first insulating member includes a first insulating region, a second insulating region, and a third insulating region. The first insulating region is provided between the third partial region and the first electrode region in the second direction. The second insulating region is provided between the first semiconductor portion and the first electrode region in the first direction. The third insulating region is provided between the first electrode region and the second semiconductor portion in the first direction. The semiconductor device according to any one of Technical Proposals 1 to 13.

[0065] (Technical Proposal 15) Al z1 Ga 1-z1 Further includes a first compound member containing N(0<z1≦1, x2<z1). The first compound member includes a first compound region. The first compound region is provided between the third partial region and the first insulating region. The semiconductor device according to Technical Proposal 14.

[0066] (Technical Proposal 16) The first compound member further includes a second compound region and a third compound region. The second compound region is provided between the first semiconductor portion and the first insulating region. The third compound region is provided between the third insulating region and the second semiconductor portion. The semiconductor device according to Technical Proposal 15.

[0067] (Technical Solution 17) The first insulating member includes a fourth insulating region and a fifth insulating region, At least a part of the fourth insulating region is provided between the first semiconductor portion and the second electrode region in the second direction, At least a part of the fifth insulating region is provided between the second semiconductor portion and the third electrode region in the second direction, the semiconductor device according to Technical Solution 2.

[0068] (Technical Solution 18) Further comprising a second insulating member, The second insulating member includes a first insulating portion and a second insulating portion, The first semiconductor portion is provided between the fourth partial region and the first insulating portion in the second direction, The second semiconductor portion is provided between the fifth partial region and the second insulating portion in the second direction, the semiconductor device according to any one of Technical Solutions 1 to 17.

[0069] (Technical Solution 19) A part of the first electrode region is provided between the fourth partial region and the fifth partial region in the first direction, the semiconductor device according to any one of Technical Solutions 1 to 18.

[0070] (Technical Solution 20) The first electrode is electrically connected to the first semiconductor portion, The second electrode is electrically connected to the second semiconductor portion, the semiconductor device according to any one of Technical Solutions 1 to 19.

[0071] According to the embodiment, a semiconductor device capable of improving characteristics can be provided.

[0072] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the specific configurations of each element such as semiconductor members, semiconductor layers, electrodes, and insulating members included in the semiconductor device, those skilled in the art can appropriately select from the known range to implement the present invention in the same manner, and as long as the same effects can be obtained, it is included in the scope of the present invention.

[0073] In addition, combinations of any two or more elements of each specific example within a technically possible range are also included in the scope of the present invention as long as they include the gist of the present invention.

[0074] Furthermore, based on the semiconductor device described above as an embodiment of the present invention, all semiconductor devices that can be appropriately designed and modified by those skilled in the art also belong to the scope of the present invention as long as they include the gist of the present invention.

[0075] In addition, within the scope of the idea of the present invention, those skilled in the art can conceive of various modification examples and correction examples, and it is understood that those modification examples and correction examples also belong to the scope of the present invention.

[0076] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention, and are also included in the scope of the invention described in the claims and its equivalents.

Explanation of Reference Numerals

[0077] 10, 20: First and second semiconductor layers, 10B: Nitride layer, 10C: Carrier region, 10M: Semiconductor member, 10S: Substrate, 11 - 15: First to fifth partial regions, 21, 22: First and second semiconductor parts, 31: First compound member, 31a - 31e: First to fifth compound regions, 41, 42: First and second insulating members, 41a - 41e: First to fifth insulating regions, 42a, 42b: First and second insulating parts, 51 - 53: First to third electrodes, 53a - 53d: First to fourth electrode regions, 110: Semiconductor device, D1 - D3: First to third directions

Claims

1. a first electrode, a second electrode, a third electrode containing silicon, wherein a position of the third electrode in a first direction from the first electrode to the second electrode is between a position of the first electrode in the first direction and a position of the second electrode in the first direction, and the third electrode includes a first electrode region and a second electrode region, the third electrode; a semiconductor member including a first semiconductor layer and a second semiconductor layer, The first semiconductor layer is Al ｘ１ Ga １－ｘ１ N (0 ≤ x1 < 1), the first semiconductor layer includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, a second direction from the first partial region to the first electrode intersects the first direction, a direction from the second partial region to the second electrode is along the second direction, a direction from the third partial region to the first electrode region is along the second direction, a position of the fourth partial region in the first direction is between a position of the first partial region in the first direction and a position of the third partial region in the first direction, and a position of the fifth partial region in the first direction is between the position of the third partial region in the first direction and a position of the second partial region in the first direction. The second semiconductor layer is Al ｘ２ Ga １－ｘ２ N (0 < x2 ≤ 1, x1 < x2), the second semiconductor layer includes a first semiconductor portion and a second semiconductor portion, the direction from the fourth partial region to the first semiconductor portion is along the second direction, the direction from the fifth partial region to the second semiconductor portion is along the second direction, the first electrode region is between the first semiconductor portion and the second semiconductor portion in the first direction, and a part of the first semiconductor portion is provided between the fourth partial region and the second electrode region in the second direction, the semiconductor member, a first insulating member provided between the semiconductor member and the third electrode, comprising, the first electrode region and the second electrode region satisfy a first condition or a second condition, in the first condition, the second electrode region includes a first element including at least one selected from the group consisting of P and As, and the first electrode region does not include the first element, in the second condition, a second concentration of the first element in the second electrode region is higher than a first concentration of the first element in the first electrode region, a semiconductor device.

2. the third electrode further includes a third electrode region, a part of the second semiconductor portion is provided between the fifth partial region and the third electrode region in the second direction, the third electrode region includes the first element, or a third concentration of the first element in the third electrode region is higher than the first concentration, the semiconductor device according to claim 1.

3. the third electrode further includes a fourth electrode region, the fourth electrode region is provided between the second electrode region and the third electrode region in the first direction, the fourth electrode region includes the first element, or a fourth concentration of the first element in the fourth electrode region is higher than the first concentration, the semiconductor device according to claim 2.

4. the third electrode further includes a fourth electrode region, the fourth electrode region is provided between the second electrode region and the third electrode region in the first direction, the fourth electrode region does not include the first element, or a fourth concentration of the first element in the fourth electrode region is lower than the second concentration and lower than the third concentration, the semiconductor device according to claim 2.

5. the first electrode region includes a second element including at least one selected from the group consisting of B and Al, The semiconductor device according to claim 3 or 4, wherein the second electrode region does not contain the second element, or the concentration of the second element in the second electrode region is lower than the concentration of the second element in the first electrode region.

6. The semiconductor device according to claim 5, wherein the second concentration is higher than the concentration of the second element in the second electrode region.

7. The first electrode region contains a second element including at least one selected from the group consisting of B and Al. The semiconductor device according to claim 3 or 4, wherein the fourth electrode region does not contain the second element, or the concentration of the second element in the fourth electrode region is lower than the concentration of the second element in the first electrode region.

8. The semiconductor device according to any one of claims 1 to 4, wherein the third electrode contains a second element including at least one selected from the group consisting of B and Al.

9. The first insulating member includes a first insulating region, a second insulating region, and a third insulating region. The first insulating region is provided between the third partial region and the first electrode region in the second direction. The second insulating region is provided between the first semiconductor portion and the first electrode region in the first direction. The semiconductor device according to claim 1, wherein the third insulating region is provided between the first electrode region and the second semiconductor portion in the first direction.

10. Al ｚ１ Ga １－ｚ１ further comprising a first compound member containing N (0 < z1 ≤ 1, x2 < z1). The first compound member includes a first compound region. The semiconductor device according to claim 9, wherein the first compound region is provided between the third partial region and the first insulating region.

Images