Electro-optical device and electronic apparatus

Abstract

To increase an aperture ratio and utilization efficiency of light.SOLUTION: An electro-optical device includes: a substrate 102; a common electrode 133; a pixel electrode 131; an organic layer 132; a reflective electrode 181; insulating layers 210, 212, 214 provided in a layer between the reflective electrode 181 and the pixel electrode 133 and having a contact hole Ct3; a connection member 163 provided inside a contact hole Ct1 and connecting the reflective electrode 181 and the pixel electrode 131 to each other; insulating layers 204, 207 provided in a layer on a side opposite to the pixel electrode 131 with respect to the reflective electrode 181 and having a contact hole Ct2; and a connection member 162 provided inside the contact hole Ct2 and electrically connected to the reflective electrode 181. A diameter a3 of the connection member 163 is smaller than a diameter a2 of the connection member 162.SELECTED DRAWING: Figure 5

Description

Technical Field

[0001] The present invention relates to an electro-optical device and an electronic device.

Background Art

[0002] In recent years, various electro-optical devices using light-emitting elements such as organic light-emitting diode (OLED) elements have been proposed. In an electro-optical device, a pixel portion including the light-emitting element and a transistor that supplies current to drive the light-emitting element is provided corresponding to the pixels of the image to be displayed, corresponding to the intersection of the scanning line and the data line.

[0003] As the high definition and miniaturization of electro-optical devices progress, the utilization efficiency of light in the light-emitting element decreases. Therefore, a technique for forming an optical resonance structure in sub-pixels constituting the pixel has been proposed (see, for example, Patent Document 1).

[0004] Specifically, a reflective layer provided at a distance of the first optical distance from the common electrode, a pixel electrode provided between the common electrode and the reflective layer, a light-emitting layer provided between the common electrode and the pixel electrode, and an optical distance adjustment layer provided between the pixel electrode and the reflective layer are provided. Then, by adjusting the thickness of the optical distance adjustment layer according to the wavelength of the color of the sub-pixel, the light emitted from the light-emitting layer reciprocates between the common electrode and the reflective layer, and the light of the wavelength corresponding to the distance is enhanced and emitted from the common electrode.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] However, in the above-described technology, the contact holes provided in the lower layer of the reflective layer cause unevenness in the reflective layer, and the light incident on the reflective layer is diffusely reflected by the reflective layer. For this reason, there is a problem that the utilization efficiency of light is reduced.

Means for Solving the Problems

[0007] In order to solve the above problems, an electro-optical device according to an aspect of the present disclosure includes a substrate, a common electrode, a pixel electrode provided between the substrate and the common electrode, a light-emitting layer provided between the pixel electrode and the common electrode, a reflective electrode provided between the substrate and the pixel electrode, a first insulating layer provided in a layer between the reflective electrode and the pixel electrode and having a first contact hole, a first connection member provided inside the first contact hole and electrically connecting the reflective electrode and the pixel electrode to each other, a second insulating layer provided in a layer on the side opposite to the pixel electrode with respect to the reflective electrode and having a second contact hole, and a second connection member provided inside the second contact hole and electrically connected to the reflective electrode. In a plan view, the diameter of the first connection member is smaller than the diameter of the second connection member.

Brief Description of the Drawings

[0008]

Fig. 1

Fig. 2

Fig. 3

Fig. 4

Fig. 5

Fig. 6

Fig. 7

Fig. 8

Fig. 9

Fig. 10

Fig. 11

Fig. 12

Fig. 13

Fig. 14

Fig. 15

Fig. 16

Embodiments for Carrying Out the Invention

[0009] Hereinafter, the electro-optical device according to an embodiment of the present invention will be described with reference to the drawings. In each figure, the dimensions and scales of each part are appropriately different from the actual ones. Further, the embodiments described below are preferred specific examples, and thus various technically preferable limitations are imposed. However, the scope of the present invention is not limited to these embodiments unless otherwise specified in the following description to limit the present invention.

[0010] FIG. 1 is a perspective view showing the electro-optical device 10 according to the first embodiment, and FIG. 2 is a block diagram showing the electrical configuration of the electro-optical device 10.

[0011] The electro-optical device 10 is a microdisplay panel that displays a color image, for example, in a head-mounted display. The electro-optical device 10 includes a plurality of pixel portions and a driving circuit that drives the pixel portions. The pixel portion and the driving circuit are integrated on a semiconductor substrate. The semiconductor substrate is typically a silicon substrate, but other semiconductor substrates may also be used.

[0012] The electro-optical device 10 is housed in a frame-shaped case 192 that opens in the display area 100. One end of an FPC substrate 194 is connected to the electro-optical device 10. Note that FPC is an abbreviation for Flexible Printed Circuits. A plurality of terminals 196 for connecting to a host device (not shown) are provided at the other end of the FPC substrate 194. When the plurality of terminals 196 are connected to the host device, video data, a synchronization signal, etc. are supplied to the electro-optical device 10 from the host device via the FPC substrate 194.

[0013] In the figure, the X direction is the extending direction of the scanning lines in the electro-optical device 10, which indicates the horizontal direction in the display screen, and the Y direction is the extending direction of the data lines, which indicates the vertical direction in the display screen. The two-dimensional plane defined by the X direction and the Y direction is the substrate surface of the semiconductor substrate. The Z direction is perpendicular to the X direction and the Y direction and is the light emission direction of the light emitted from the light-emitting element. Also, in this description, a plan view means looking at the semiconductor substrate from the direction opposite to the Z direction, and a cross-sectional view means looking at the semiconductor substrate after being broken along the direction perpendicular to the substrate surface.

[0014] As shown in FIG. 2, the electro-optical device 10 is roughly classified into a control circuit 30, a data signal output circuit 50, a display area 100, and a scanning line drive circuit 120.

[0015] In the display area 100, m rows of scanning lines 12 are provided along the X direction, and (3n) columns of data lines 14 are provided along the Y direction and electrically insulated from each of the scanning lines 12. Note that m and n are integers of 2 or more.

[0016] In the display area 100, a pixel section 110 is provided corresponding to the intersections of m rows of scanning lines 12 and (3n) columns of data lines 14. For this reason, the pixel section 110 is arranged in a matrix of m rows in the vertical direction and (3n) columns in the horizontal direction. Among the matrix arrangements, in order to distinguish rows, they may be called the 1st, 2nd, 3rd, …, (m - 1)th, and mth rows in order from the top in the figure. Similarly, in order to distinguish columns of the matrix, they may be called the 1st, 2nd, 3rd, …, (3n - 2)th, (3n - 1)th, and (3n)th columns in order from the left in the figure.

[0017] Note that in order to explain the scanning line 12 in a generalized manner, an integer i from 1 to m is used. Similarly, in order to explain the data line 14 in a generalized manner, an integer j from 1 to (3n) is used.

[0018] The control circuit 30 controls each part based on video data Vid and a synchronization signal Sync supplied from an upper host device (not shown). Specifically, the control circuit 30 generates various control signals to control each part.

[0019] The video data Vid specifies the gradation levels of the pixels in the image to be displayed, for example, in 8 bits for each of RGB. The synchronization signal Sync includes a vertical synchronization signal indicating the start of vertical scanning of the video data Vid, a horizontal synchronization signal indicating the start of horizontal scanning, and a dot clock signal indicating the timing for one pixel of the video data.

[0020] In this embodiment, the pixels of the image to be displayed and the pixel section 110 in the display area 100 correspond one-to-one.

[0021] The luminance characteristics at the gradation level indicated by the video data Vid supplied from the host device do not necessarily match the luminance characteristics of the OLEDs included in the pixel section 110. Therefore, in order to cause the OLEDs to emit light with a luminance corresponding to the gradation level indicated by the video data Vid, the control circuit 30 up-converts 8 bits of the video data Vid to, for example, 10 bits and outputs it as video data Vdata. For this reason, the 10-bit video data Vdata becomes data corresponding to the gradation level specified by the video data Vid.

[0022] Note that for up-conversion, a look-up table that stores in advance the correspondence between the 8 bits of the input video data Vid and the 10 bits of the output video data Vdata is used.

[0023] The scanning line driving circuit 120 is a circuit for driving the pixel section 110 arranged in m rows (3n columns) row by row according to the control by the control circuit 30. For example, the scanning line driving circuit 120 sequentially supplies scanning signals / Gwr(1), / Gwr(2),..., / Gwr(m-1), / Gwr(m) to the scanning lines 12 of the first, second, third,..., (m-1)-th, and m-th rows. Generally, the scanning signal supplied to the scanning line 12 of the i-th row is denoted as / Gwr(i).

[0024] The data signal output circuit 50 is a circuit that outputs a data signal to the pixel section 110 located in the row selected by the scanning line driving circuit 120 via the data line 14 according to the control by the control circuit 30. The data signal is a voltage signal obtained by analog-converting the 10-bit video data Vdata. That is, the data signal output circuit 50 analog-converts one row of video data Vdata corresponding to the pixel section 110 in columns 1 to (3n) in the selected row and outputs it to the data lines 14 in columns 1 to (3n) in this order.

[0025] In the figure, the data signals output to the data lines 14 in the 1st, 2nd, 3rd, …, (3n - 2)th, (3n - 1)th, and (3n)th columns are denoted as Vd(1), Vd(2), Vd(3), …, Vd(3n - 2), Vd(3n - 1), and Vd(3n) in sequence. Generally, the potential of the data line 14 in the jth column is denoted as Vd(j).

[0026] In the display area 100, the pixel portions 110 of B, G, and R are arranged along the X direction, and the pixel portions 110 of the same color are arranged along the Y direction. Therefore, if we focus on any one column of the data lines 14, the pixel portions 110 of the same color will correspond. Note that one color is represented by the additive color mixing of the adjacent RGB pixel portions 110 in the X direction. For this reason, the pixel portion 110 should strictly speaking be called a sub - pixel portion, but for the convenience of explanation, it is denoted as a pixel portion.

[0027] Figure 3 is a diagram showing the electrical configuration of the pixel portion 110 in the electro - optical device 10. The pixel portions 110 arranged in m rows and (3n) columns are identical to each other electrically. Therefore, the pixel portion 110 will be described by representing it with one pixel portion 110 corresponding to the jth column in the ith row.

[0028] As shown in the figure, the pixel portion 110 electrically includes P - channel MOS - type transistors 121 and 122, an OLED 130, and a capacitive element 140.

[0029] Note that in the description of the pixel portion 110, the phrase "electrically speaking" is used when referring to the plurality of elements constituting the pixel portion 110 and the connection relationship between the plurality of elements. Since the pixel portion 110 mechanically or physically includes elements that do not contribute to the electrical connection relationship, such an expression is used.

[0030] The OLED 130 is an example of a light-emitting element, and sandwiches an organic layer 132 including a light-emitting layer between a pixel electrode 131 and a common electrode 133. The pixel electrode 131 functions as an anode, and the common electrode 133 functions as a cathode. In the OLED 130, when current flows from the anode toward the cathode, holes injected from the anode and electrons injected from the cathode recombine in the light-emitting layer of the organic layer 132 to generate excitons, and white light is generated.

[0031] The generated white light resonates in an optical resonator composed of a reflective electrode (omitted in FIG. 3) and the common electrode 133 of the semi-reflective and semi-transmissive layer, and is emitted at a resonance wavelength set corresponding to any one of red, green, and blue. A color filter corresponding to the color is provided on the light-emitting side of the optical resonator. Therefore, the light emitted from the OLED 130 is visually recognized by the observer after being colored by the optical resonator and the color filter.

[0032] In the transistor 121 of the pixel portion 110 at the i-th row and j-th column, the gate node g is connected to the drain node of the transistor 122, the source node is connected to the power supply line 116 of the voltage Vel, and the drain node is connected to the pixel electrode 131 which is the anode of the OLED 130.

[0033] In the transistor 122 of the pixel portion 110 at the i-th row and j-th column, the gate node is connected to the scanning line 12 of the i-th row, and the source node is connected to the data line 14 of the j-th column. The common electrode 133 functioning as the cathode of the OLED 130 is connected to the power supply line 118 of the voltage Vct. Further, since the electro-optical device 10 is formed on a silicon substrate, the substrate potential of the transistors 121 and 122 is, for example, a potential corresponding to the voltage Vel.

[0034] The pixel portion 110 shown in FIG. 3 is common for each RGB color electrically, so it has been generally described without specifying the color. Structurally, however, it is different for each color. Therefore, when explaining by distinguishing by color, it is denoted as pixel portions 110R, 110G, and 110B.

[0035] Figure 4 is a timing chart for explaining the operation of the electro-optical device 10.

[0036] In the electro-optical device 10, the m rows of scanning lines 12 are scanned one by one in the order of the 1st, 2nd, 3rd,..., mth rows in one frame period (V). Specifically, as shown in the figure, the scanning signals / Gwr(1), / Gwr(2),..., / Gwr(m - 1), / Gwr(m) are sequentially and exclusively set to the L level by the scanning line driving circuit 120 for each horizontal scanning period (H).

[0037] In this embodiment, among the scanning signals / Gwr(1) to / Gwr(m), the periods during which adjacent scanning signals become the L level are temporally isolated. Specifically, after the scanning signal / Gwr(i - 1) changes from the L level to the H level, the next scanning signal / Gwr(i) becomes the L level after a period. This period corresponds to the horizontal blanking period.

[0038] In this description, one frame period (V) refers to the period required to display one frame of the image specified by the video data Vid. If the length of one frame period (V) is the same as the vertical synchronization period, for example, if the frequency of the vertical synchronization signal included in the synchronization signal Sync is 60 Hz, it is 16.7 milliseconds corresponding to one cycle of the vertical synchronization signal. Also, the horizontal scanning period (H) is the time interval during which the scanning signals / Gwr(1) to / Gwr(m) sequentially become the L level. In the figure, for convenience, the start timing of the horizontal scanning period (H) is set approximately at the center of the horizontal blanking period.

[0039] Among the scanning signals / Gwr(1) to / Gwr(m), when a certain scanning signal, for example, the scanning signal / Gwr(i) supplied to the scanning line 12 of the ith row, becomes the L level, in the jth column, in the pixel portion 110 of the ith row and jth column, the transistor 122 is turned on. Therefore, the gate node g of the transistor 121 in the pixel portion 110 is electrically connected to the data line 14 of the jth column.

[0040] In this description, the "on state" of a transistor means that the source node and the drain node of the transistor are electrically closed and in a low impedance state. Also, the "off state" of a transistor means that the source node and the drain node are electrically open and in a high impedance state.

[0041] Also, in this description, being "electrically connected" or simply "connected" means a state where two or more elements are directly or indirectly connected or coupled. "Electrically disconnected" or simply "disconnected" means a state where two or more elements are not directly or indirectly connected or coupled.

[0042] During the horizontal scanning period (H) when the scanning signal / Gwr(i) is at the L level, the data signal output circuit 50 converts the gradation levels of the pixels from column 1 to column (3n) of the i-th row indicated by the video data Vdata into analog potentials Vd(1) to Vd(3n) and outputs them as data signals to the data lines 14 of columns 1 to (3n). For the j-th column, the data signal output circuit 50 converts the gradation level d(i,j) of the pixel at the i-th row and j-th column into the potential Vd(j) of an analog signal and outputs it as a data signal to the data line 14 of the j-th column.

[0043] During the horizontal scanning period (H) when the scanning signal / Gwr(i - 1) one row before the scanning signal / Gwr(i) is at the L level, the data signal output circuit 50 converts the gradation level d(i - 1,j) of the pixel at the (i - 1)-th row and j-th column into the potential Vd(j) of an analog signal and outputs it as a data signal to the data line 14 of the j-th column.

[0044] The data signal of the potential Vd(j) is applied to the gate node g of the transistor 121 in the pixel portion 110 at the i-th row and j-th column via the data line 14 of the j-th column, and the potential Vd(j) is held by the capacitive element 140. Therefore, the transistor 121 allows a current corresponding to the voltage between the gate node and the source node to flow to the OLED 130.

[0045] Even when the scanning signal Gwr(i) becomes high level and the transistor 122 turns off, the potential Vd(j) is held by the capacitive element 140, so current continues to flow through the OLED 130. Therefore, in the pixel section 110 of the i-th row and j-th column, until the transistor 122 turns on again and the voltage of the data signal is applied again after a period of one frame (V), the OLED 130 continues to emit light with the voltage held by the capacitive element 140, that is, with brightness corresponding to the gradation level.

[0046] Here, the pixel section 110 of the i-th row and j-th column has been described. However, the OLEDs 130 of the pixel sections 110 other than the j-th column in the i-th row also emit light with the brightness indicated by the video data Vdata.

[0047] Also, for the OLEDs 130 of the pixel sections 110 other than the i-th row, as the scanning signals / Gwr(1)~ / Gwr(m) sequentially become low level, they emit light with the brightness indicated by the video data Vdata.

[0048] Therefore, in the electro-optical device 10, within one frame period (V), the OLEDs 130 in all the pixel sections 110 from the first row and first column to the m-th row (3n) column emit light with the brightness indicated by the video data Vdata, and an image of one frame is displayed.

[0049] Next, the structure of the electro-optical device 10 will be described while considering the manufacturing process.

[0050] In the electro-optical device 10, transistors 121 and 122 are provided within the display area 100, and outside the display area 100, the control circuit 30, the data signal output circuit 50, and the scanning line driving circuit 120 are provided through a fine process.

[0051] On the other hand, within the display area 100, it is necessary to provide the OLED 130 containing organic substances, the color filter, etc. through a special process different from the general semiconductor manufacturing process.

[0052] Therefore, among high-definition electro-optical devices 10, a technique has been proposed in which a substrate on which transistors and the like are formed through a fine semiconductor process and a substrate on which an OLED or the like is provided through a special process are bonded together.

[0053] However, in this technique, since it is necessary to accurately align and connect the electrodes at the bonding surface, the process becomes long and complicated. For this reason, there are problems in terms of a decrease in yield and an increase in cost.

[0054] Therefore, in the present embodiment, the electro-optical device 10 is created by a fine semiconductor process up to an intermediate process, and is created by a special process after that process.

[0055] Here, since there is no difference in that both the fine process and the special process are semiconductor manufacturing processes, for the purpose of distinguishing between the two processes, the fine process is referred to as the first process Fstp, and the special process is referred to as the second process Sndp.

[0056] FIG. 5 is a cross-sectional view of a main part showing the structure of the electro-optical device 10, and FIGS. 6 to 9 are cross-sectional views of the main part in the first process Fstp. In any of these figures, it is a partial cross-sectional view taken along a region including the pixel portions 110B, 110G, 110R arranged at the end of the display region 100, the inspection terminal portion 113, and the connection portion 115 to the common electrode 133 in the electro-optical device 10.

[0057] In these figures, the substrate 102 is a semiconductor substrate such as silicon. An intermediate layer 104 is provided on the substrate 102. The intermediate layer 104 is a layer in which a plurality of layers of an insulating layer and a wiring layer are combined for simplicity. Elements such as transistors 121 and 122 and various wirings are provided in regions 141, 143, and 145 straddling the substrate 102 and the intermediate layer 104.

[0058] Specifically, the region 141 is an area where transistors and wiring layers in the pixel portion 110 are provided.

[0059] The region 143 is an area where transistors and wiring layers in the terminal portion 113 are provided, and is an area where an inspection circuit for inspecting the semiconductor substrate is provided.

[0060] The region 145 is an area where transistors and wiring layers in the connection portion 115 are provided, and is an area where transistors and wiring layers are provided to supply the voltage Vct to the common electrode 133.

[0061] The uppermost layer of the wiring layer in the region 141 is the metal electrode 151. The metal electrode 151 is formed by patterning a metal wiring layer such as aluminum or copper, and is connected to the drain node d of the transistor 121.

[0062] The uppermost layer of the wiring layer in the region 143 is the metal electrode 153. The metal electrode 153 is formed by patterning a metal wiring layer in the same layer as the metal electrode 151, and is connected to the input end or output end of the inspection circuit.

[0063] The uppermost layer of the wiring layer in the region 145 is the metal electrode 155. The metal electrode 153 is formed by patterning a metal wiring layer in the same layer as the metal electrode 151, and is connected to the output end of the power supply circuit that supplies the voltage Vct.

[0064] Contact holes Ct1, Ct21, and Ct31 are provided in the uppermost insulating layer 105 of the composite layer 104.

[0065] Specifically, the contact hole Ct1 opens the insulating layer 105 to conduct with the metal electrode 151. The contact hole Ct1 is filled with a connecting member 161 such as tungsten. The contact hole Ct21 opens the insulating layer 105 to conduct with the metal electrode 153. The contact hole Ct2 is filled with a connecting member 163 such as tungsten. The contact hole Ct31 opens the insulating layer 105 to conduct with the metal electrode 155. The contact hole Ct31 is filled with a connecting member 165 such as tungsten.

[0066] On the upper surface of the insulating layer 105, terminal electrodes 171, 173, and 175 are provided by patterning a metal wiring layer such as aluminum. The terminal electrode 171 is connected to the metal electrode 151 via the connecting member 161 of the contact hole Ct1. Similarly, the terminal electrode 173 is connected to the metal electrode 153 via the connecting member 163 of the contact hole Ct21, and the terminal electrode 175 is connected to the metal electrode 155 via the connecting member 165 of the contact hole Ct31.

[0067] The insulating layer 202 is provided to cover the insulating layer 105, the terminal electrodes 171, 173, and 175, and then is smoothed by CMP (Chemical Mechanical Polishing) to be flush with the upper surfaces of the terminal electrodes 171, 173, and 175.

[0068] The insulating layer 204 is a relatively high-hardness insulating thin film such as silicon nitride, and is provided to cover the terminal electrodes 171, 173, and 175.

[0069] The insulating layer 205 is a relatively low-hardness insulating thick film such as silicon dioxide, and is provided to cover the insulating layer 204.

[0070] In order to inspect whether circuit components such as transistors formed in the first process Fstp in the electro-optical device 10 operate normally, there is an inspection process of supplying signals to the inspection circuit or inspecting signals output from the inspection circuit. Therefore, before the inspection process, an inspection opening Ts1 exposing the terminal electrode 173 is provided by openings in the insulating layers 204 and 207. In the inspection process, the probe of the tester contacts the terminal electrode 173 exposed by the inspection opening Ts1, and the electro-optical device 10 is inspected.

[0071] After the inspection process, as shown in FIG. 7, an insulating layer 206 is provided to cover the inspection opening Ts1, the insulating layers 204 and 205. As a result, the insulating layer 206 will be filled in the inspection opening Ts1.

[0072] After that, as shown in FIG. 8, the upper surface of the insulating layer 204 is flattened by CMP or etching until it is exposed.

[0073] Such flattening is possible by etch-back using the selectivity in etching if the insulating layer 204 is made of silicon nitride and the insulating layer 205 is a laminated structure of different insulating layers such as silicon dioxide. Specifically, if the insulating layer 205 made of silicon dioxide is etched and the etching is terminated when the upper surface of the insulating layer 204 made of silicon nitride is exposed, it is possible to flatten while leaving the insulating layer 204 on the upper surfaces of the terminal electrodes 171, 173, and 175.

[0074] After flattening while leaving the insulating layer 204, as shown in FIG. 9, an insulating layer 207 made of, for example, silicon dioxide is provided to cover the insulating layer 204.

[0075] Here, up to the provision of the insulating layer 207 is regarded as the first process Fstp. However, even before the insulating layer 207 is provided, since the terminal electrodes 171, 173, and 175 are covered by the insulating layers 204 and 206, there is little influence in the process transition. Therefore, up to the state of FIG. 8 is regarded as the first process Fstp. The step of providing the insulating layer 207 may be the second process Sndp.

[0076] In the second process Sndp, as shown in FIG. 5, contact holes Ct2, Ct22, and Ct32 are provided in the insulating layers 204 and 207.

[0077] Specifically, the contact hole Ct2 opens the insulating layers 207 and 204 to conduct with the terminal electrode 171. The contact hole Ct2 is filled with a connection member 162 such as tungsten. The contact hole Ct22 opens the insulating layers 207 and 204 to conduct with the terminal electrode 173. The contact hole Ct22 is filled with a connection member 1623 such as tungsten. The contact hole Ct32 opens the insulating layers 207 and 204 to conduct with the terminal electrode 175. The contact hole Ct32 is filled with a connection member 1625 such as tungsten.

[0078] Note that a plurality of contact holes Ct22 are provided for one terminal electrode 173 to reduce the resistance. For the same reason, a plurality of contact holes Ct32 are provided for one terminal electrode 175. Also, let the diameter of the contact hole Ct2 in plan view be a2. Here, the diameter of the contact hole refers to the diameter of the circumscribed circle in the shape of the contact hole as viewed in plan view.

[0079] On the insulating layer 207, reflection electrodes 181, 183, and 185 are provided by patterning a metal wiring layer having light reflectivity such as aluminum. The reflection electrode 181 is connected to the terminal electrode 171 through the connection member 162 of the contact hole Ct2. Similarly, the reflection electrode 183 is connected to the terminal electrode 173 through the connection member 1623 of the contact hole Ct22, and the reflection electrode 185 is connected to the terminal electrode 175 through the connection member 1625 of the contact hole Ct32.

[0080] Note that the region where the reflective electrode 181 is provided is included in the region where the terminal electrode 171 is provided when viewed in plan.

[0081] The insulating layer 210 is provided so as to cover the reflective electrodes 181, 183, 185 and the insulating layer 207. The optical adjustment layers 212 and 214 are laminated in this order so as to cover the insulating layer 210. However, in the pixel portion 110B, the optical adjustment layers 212 and 214 are not provided, and in the pixel portion 110G, the optical adjustment layer 214 is not provided.

[0082] In the pixel portion 110B, the contact hole Ct3 opens the insulating layer 210 to expose a part of the reflective electrode 181 in the pixel portion 110B. Similarly, in the pixel portion 110G, the contact hole Ct3 opens the optical adjustment layer 212 and the insulating layer 210 to expose a part of the reflective electrode 181 in the pixel portion 110G. In the pixel portion 110R, the contact hole Ct3 opens the optical adjustment layers 214, 212 and the insulating layer 210 to expose a part of the reflective electrode 181 in the pixel portion 110R.

[0083] The contact holes Ct3 of the pixel portions 110G, 110B and 110R are filled with connection members 163 such as tungsten, respectively.

[0084] In the terminal portion 113, the contact hole Ct23 opens the optical adjustment layers 214, 212 and the insulating layer 210 to expose a part of the reflective electrode 183. The contact hole Ct23 is filled with a connection member 1633 such as tungsten.

[0085] Similarly, in the connection portion 115, the contact hole Ct33 opens the optical adjustment layers 214, 212 and the insulating layer 210 to expose a part of the reflective electrode 185. The contact hole Ct33 is filled with a connection member 1635 such as tungsten.

[0086] Note that a plurality of contact holes Ct23 are provided for one reflective electrode 183 in order to reduce the resistance. For the same reason, a plurality of contact holes Ct33 are provided for one reflective electrode 185.

[0087] Also, let the diameter of the contact hole Ct3 in plan view be a3. Here, the diameter a2 of the contact hole Ct2 and the diameter a3 of the contact hole Ct3 have the following relationship.

[0088] a2 > a3

[0089] In the pixel portions 110B, 110G, and 110R, pixel electrodes 131 are respectively provided by patterning a transparent conductive layer such as ITO (Indium Tin Oxide). Specifically, the pixel electrode 131 is provided on the insulating layer 210 in the pixel portion 110B, on the optical adjustment layer 212 in the pixel portion 110G, and on the optical adjustment layer 214 in the pixel portion 110R.

[0090] Thereby, in the pixel portions 110B, 110G, and 110R, the pixel electrodes 131 are respectively connected to the reflective electrode 181.

[0091] Similarly, in the terminal portion 113, a terminal electrode 135 is provided by patterning the same transparent conductive layer as the pixel electrode 131 and is connected to the reflective electrode 183. In the connection portion 115, a connection electrode 136 is provided by patterning the above transparent conductive layer and is connected to the reflective electrode 185.

[0092] The pixel isolation layer 137 is an insulating layer laminated on the optical adjustment layers 212 and 214, the pixel electrode 131, the terminal electrode 135, or the connection electrode 136 and provided so as to cover the peripheral portions of these electrodes. For example, silicon dioxide is used as the pixel isolation layer 137. Also, the opening shape in the pixel isolation layer 137 will be described later.

[0093] The organic layer 132 is laminated on the pixel electrode 131 or the pixel isolation layer 137 so as not to cover the connection electrode 136 in the connection portion 115. Although not particularly shown, the organic layer 132 includes a hole injection layer, an organic light emitting layer, and an electron transport layer, and is common to all pixel portions in the pixel portions 110R, 110G, and 110B.

[0094] The common electrode 133 is a conductive layer having light transmissivity and reflectivity. The common electrode 133 is provided so as to cover the organic layer 132 and to contact the connection electrode 136. The common electrode 133 is common to all pixel portions in the pixel portions 110R, 110G, and 110B. As the common electrode 133, for example, an alloy of magnesium and silver is used.

[0095] In the organic layer 132, holes are supplied from the region of the pixel electrode 131 that is not covered by the pixel isolation layer 137, that is, the region in contact with the pixel electrode 131, and light is emitted in white.

[0096] In the pixel portion 110B, a light resonator is formed by the reflective electrode 181 and the common electrode 133 in a cross-sectional view, and the optical distance LB between the reflective electrode 181 and the common electrode 133 is defined by the film thickness of the insulating layer 210. The optical distance is, strictly speaking, the value obtained by multiplying the distance between the reflective electrode 181 and the common electrode 133 by the refractive index of the medium between the reflective electrode 181 and the common electrode 133, but here it is simply shown as a physical distance.

[0097] In the pixel portion 110G, a light resonator is formed by the reflective electrode 181 and the common electrode 133 in a cross-sectional view, and the optical distance LG between the reflective electrode 181 and the common electrode 133 is defined by the film thicknesses of the insulating layer 210 and the optical adjustment layer 212.

[0098] Similarly, in the pixel portion 110R, a light resonator is formed by the reflective electrode 181 and the common electrode 133 in a cross-sectional view, and the optical distance LR between the reflective electrode 181 and the common electrode 133 is defined by the film thicknesses of the insulating layer 210, the optical adjustment layers 212 and 214.

[0099] Here, the optical distances LB, LG, and LR have the following relationship.

[0100] LB < LG < LR

[0101] The flattening layer 190 is an insulating layer having light transmissivity, and is provided so as to cover the common electrode 133 and not cover the terminal electrode 135. In fact, the flattening layer 190 has a laminated structure with a sealing layer that actually protects the organic layer 132 and the common electrode 133 from moisture.

[0102] In the pixel portion 110B, the coloring layer Cf_B is provided so as to cover a region where the pixel electrode 131 and the organic layer 132 are in contact with each other in the flattening layer 190. The coloring layer Cf_B is provided by patterning a photosensitive resin containing a pigment that transmits blue light using photolithography technology. Thereby, the coloring layer Cf_B has a function of transmitting blue color light. The blue color light refers to light including the blue wavelength range. In the first embodiment, the blue wavelength range is 400 nm or more and 500 nm or less.

[0103] In the pixel portion 110G, the coloring layer Cf_G is provided so as to cover a region where the pixel electrode 131 and the organic layer 132 are in contact with each other in the flattening layer 190. The coloring layer Cf_G is provided by patterning a photosensitive resin containing a pigment that transmits green light using photolithography technology. Thereby, the coloring layer Cf_G has a function of transmitting green color light. The green color light refers to light including the green wavelength range. In the first embodiment, the green wavelength range is 500 nm or more and 580 nm or less.

[0104] In the pixel section 110R, the colored layer Cf_R is provided so as to cover the region where the pixel electrode 131 and the organic layer 132 are in contact with each other in the planarization layer 190. The colored layer Cf_R is provided by patterning a photosensitive resin containing a pigment that transmits green light using photolithography technology. As a result, the colored layer Cf_R has a function of transmitting red-colored light. The red-colored light refers to light including the red wavelength range. In the first embodiment, the red wavelength range is 500 nm or more and 580 nm or less. The red wavelength range is 580 nm or more and 700 nm or less.

[0105] Note that, at the periphery of the display region 100 where the pixel sections 110B, 110G, and 110R are arranged, for example, the colored layers Cf_B, Cf_G, and Cf_R, and CG are laminated in the planarization layer 190 in this order. The lamination of the colored layers functions as a frame of the display region 100.

[0106] Further, a protective glass 195 is provided on the colored layers Cf_B, Cf_G, and Cf_R via an adhesive 193.

[0107] In FIG. 10 is a plan view showing the shape of the opening 134 of the pixel separation layer 137, that is, the shape in which the organic layer 132 contacts the pixel electrode 131, in the pixel portions 110B, 110G, and 110R. is a cross-sectional view of the main part including the opening 134. Note that is a diagram extracted from a part of FIG. 5.

[0108] As shown in FIGS. 1 to 16, the contact hole Ct3 is provided outside the opening 134, that is, in a region overlapping the pixel electrode 131 and outside the light emitting region in a plan view. Therefore, since the light emitting region is a region avoiding the unevenness due to the contact hole Ct3, the stray light due to the unevenness is reduced. Note that In this case, since the contact hole Ct3 is rectangular in plan view, the diameter a3 is the length of the diagonal of the rectangle.

[0109] The fact that the contact hole Ct3 is provided outside the light-emitting region means, in other words, that the light-emitting region becomes narrower with respect to the pixel electrode 131, which works in an unfavorable direction in terms of the aperture ratio. Here, in the first embodiment, since the diameter a3 of the contact hole Ct3 (connection member 163) is smaller than the diameter a2 of the contact hole Ct2 (connection member 162), a decrease in the aperture ratio can be suppressed.

[0110] In the first embodiment, optical resonators having optical distances corresponding to the wavelengths of the emitted light are provided in the pixel portions 110B, 110G, and 110R. However, in FIG. 10 <c>As shown, a configuration without an optical resonator may be used. In a configuration without an optical resonator, the optical adjustment layers 212 and 214 do not need to be provided, so the structure is simplified.

[0111] Thus, according to the first embodiment, a fine semiconductor element is formed by the intermediate first process Fstp, and the reflective electrode 181, the optical resonance structure, the OLED 130, etc. are formed by the subsequent second process Sndp. Therefore, compared with a configuration in which two substrates are bonded together, high definition, low cost, and miniaturization are facilitated.

[0112] Among the pixel portions 110B, 110G, and 110R, the pixel portion 110R has the largest thickness of the insulating layer between the pixel electrode 131 and the reflective electrode 181. The thickness of the insulating layer between the pixel electrode 131 and the reflective electrode 181 in the pixel portion 110R is L23.

[0113] On the other hand, the thickness L12 of the insulating layer provided between the reflective electrode 181 and the terminal electrode 171 is substantially uniform in the pixel portions 110B, 110G, and 110R.

[0114] In the electro-optical device 10, the thickness L23 is smaller than the thickness L12. In other words, the reflective electrode 181 is provided on the insulating layer 207 having a sufficient film thickness. Therefore, it becomes easy to planarize the surface of the insulating layer 207, and the reflective surface of the reflective electrode 181 becomes flat. Therefore, according to the first embodiment, irregular reflection in the optical resonance structure can be suppressed.

[0115] In addition, since the region where the reflective electrode 181 is provided is included in the region where the terminal electrode 171 is provided in plan view, even if the light emitted from the organic layer 132 is directed toward the region 141 without being reflected by the reflective electrode 181, it is blocked by the terminal electrode 171. Therefore, according to the first embodiment, malfunction of the circuit due to stray light of the OLED 130 can be prevented.

[0116] Note that, in the first embodiment, the contact hole Ct3 is an example of the "first contact hole", the insulating layer 210 is an example of the "first insulating layer", and the connection member 163 is an example of the "first connection member". The contact hole Ct2 is an example of the "second contact hole", the insulating layers 204 and 207 are examples of the "second insulating layer", and the connection member 162 is an example of the "second connection member".

[0117] The pixel isolation layer 137 is an example of the "third insulating layer", and the opening 134 is an example of the "opening region".

[0118] Also, in the first embodiment, the terminal electrode 171 is an example of the "first metal electrode", and the terminal electrode 173 is an example of the "first inspection electrode". The insulating layer 204 is an example of the "fourth insulating layer", the insulating layer 205 is an example of the "fifth insulating layer", the insulating layer 206 is an example of the "sixth insulating layer", and the inspection opening Ts1 is an example of the "opening".

[0119] The terminal electrode 175 is an example of the "first connection electrode", the reflective electrode 185 is an example of the "second connection electrode", the connection electrode 136 is an example of the "third connection electrode", the contact hole Ct33 is an example of the "third contact hole", and the contact hole Ct32 is an example of the "fourth contact hole".

[0120] In the first process Fstp, semiconductor elements and the like are formed finely, but in the final wiring process, the metal wiring layer constituting the terminal electrode 171 and the like may be formed thickly for power strengthening or the like. In the case of a general semiconductor chip, the process proceeds to a process in which the terminals obtained by patterning the metal wiring layer are led to the terminals of the semiconductor package by wire bonding. On the other hand, in the manufacture of the electro-optical device 10, it is necessary to proceed to the second process Sndp and continue to finely form the reflective electrode and the OLED.

[0121] In a thick metal wiring layer, it is difficult to form a fine pattern. Therefore, in the display area 100, it is necessary to note that the metal wiring layer cannot be used. Therefore, a second embodiment considering this point will be described.

[0122] FIG. 11 is a cross-sectional view of a main part showing the structure of the electro-optical device 10 according to the second embodiment, and FIGS. 12 to 14 are cross-sectional views of the main part in the first process Fstp. In any of these figures, it is a partial cross-sectional view taken along a region including the pixel portions 110B, 110G, 110R arranged at the end of the display area 100 in the electro-optical device 10, the inspection terminal portion 113, and the connection portion 115 with the common electrode 133.

[0123] As shown in these figures, in the second embodiment, up to the formation of the insulating layer 105 in the first process Fstp is the same as in the first embodiment.

[0124] In the second embodiment, as described above, by patterning a metal wiring layer such as aluminum, which is the final wiring layer, a terminal electrode 187 is provided at the terminal portion 113, and a terminal electrode 189 is provided at the connection portion 115.

[0125] The terminal electrode 187 is connected to the metal electrode 153 through a contact hole Ct41 that opens the insulating layer 105, and the terminal electrode 189 is connected to the metal electrode 155 through a contact hole Ct51 that opens the insulating layer 105. In the second embodiment, since fineness is not required for the contact holes Ct41 and Ct51, the metal wiring layer is directly connected to the metal electrode without using a connecting member.

[0126] In the second embodiment, as described above, electrodes, wirings, etc. formed by patterning the metal wiring layer are not provided in the pixel portions 110G, 110B, and 110R.

[0127] After that, as shown in FIG. 12, an insulating layer 106 is provided so as to cover the insulating layer 105, the terminal electrode 187, and the terminal electrode 189.

[0128] Also in the electro-optical device 10 according to the second embodiment, in order to inspect whether the transistors and circuits formed in the first process Fstp operate normally, there is an inspection process for supplying a signal to the inspection circuit and inspecting the signal output from the inspection circuit. For this reason, before the inspection process, an inspection opening portion Ts2 is provided by opening the insulating layer 106 to expose a part of the terminal electrode 187. In the inspection process, the probe of the tester contacts the terminal electrode 187 exposed by the inspection opening portion Ts2, and the electro-optical device 10 is inspected.

[0129] After the inspection process, as shown in FIG. 13, the insulating layer 106 is planarized by CMP or etching to such an extent that the upper surfaces of the terminal electrodes 187 and 189 are exposed.

[0130] Thereafter, as shown in FIG. 14, an insulating layer 208 made of, for example, silicon dioxide is provided so as to cover the insulating layer 106, the terminal electrodes 187 and 189.

[0131] Here, the process up to the provision of the insulating layer 208 is regarded as the first process Fstp, but the process up to the state shown in FIG. 12 may also be regarded as the first process Fstp.

[0132] In the second embodiment, the wiring layer first formed by the second process Sndp is a metal wiring layer having light reflectivity such as aluminum, as in the first embodiment.

[0133] However, in the second embodiment, the upper surface of the metal electrode 151 becomes a laminated insulating layer composed of three layers of the insulating layers 105, 106, and 208. For this reason, in the second process Sndp, contact holes Ct0 for sequentially opening the insulating layers 208, 106, and 105 are provided in the pixel portions 110B, 110G, and 110R, respectively.

[0134] The upper surfaces of the terminal electrodes 187 and 189 are only the insulating layer 208, different from the pixel portions 110B, 110G, and 110R. Therefore, in the terminal portion 113, a contact hole Ct22 for opening the insulating layer 208 is provided, and in the connection portion 115, a contact hole Ct32 for opening the insulating layer 208 is provided.

[0135] The contact holes Ct0, Ct22, and Ct32 are each filled with a connection member 167 such as tungsten.

[0136] After that, reflective electrodes 181, 183, and 185 are provided by patterning a metal wiring layer having light reflectivity such as aluminum. Thereby, the reflective electrode 181 is connected to the metal electrode 151 through the contact hole Ct0 filled with the connection member 167, the reflective electrode 183 is connected to the terminal electrode 187 through the contact hole Ct22 filled with the connection member 167, and the reflective electrode 185 is connected to the terminal electrode 189 through the contact hole Ct32 filled with the connection member 167.

[0137] The subsequent steps are the same as those in the first embodiment.

[0138] In the second embodiment, in the pixel portions 110B, 110G, and 110R, the thicknesses of the insulating layers 105, 106, and 208 between the reflective electrode 185 and the metal electrode 151 are set as L14. The relationship between the thickness L14 and the thickness L23 of the insulating layer between the pixel electrode 131 and the reflective electrode 181 is the same as that in the first embodiment, L14>L23 and is in the following relationship.

[0139] Therefore, it becomes easy to flatten the surface of the insulating layer 208, so that the reflective surface of the reflective electrode 181 becomes flat, and irregular reflection in optical resonance can be suppressed.

[0140] Also, let the diameter of the contact hole Ct0 in plan view be a0. The diameter a0 and the diameter a3 of the contact hole Ct3 are in the following relationship.

[0141] a0 > a3 Also in the second embodiment, similar to the first embodiment, since the contact hole Ct3 is provided outside the light-emitting region, irregular light emission due to unevenness is reduced, which is advantageous in terms of the aperture ratio.

[0142] Also, since the region where the reflective electrode 181 is provided is included in the region where the terminal electrode 171 is provided in plan view, the same applies to the first embodiment in that malfunction of the circuit due to stray light of the OLED 130 can be prevented.

[0143] Note that in the second embodiment, the metal electrode 153 is an example of the "second metal electrode", the reflective electrode 183 is an example of the "fourth connection electrode", the terminal electrode 187 is an example of the "second inspection electrode", the insulating layer 105 is an example of the "seventh insulating layer", the insulating layer 106 is an example of the "eighth insulating layer", the insulating layer 208 is an example of the "ninth insulating layer", the contact hole Ct22 is an example of the "fifth contact hole", and the contact hole Ct41 is an example of the "sixth contact hole".

[0144] Also, the metal electrode 155 is an example of the "sixth connection electrode", the terminal electrode 189 is an example of the "seventh connection electrode", the reflective electrode 185 is an example of the "eighth inspection electrode", the connection electrode 136 is an example of the "ninth connection electrode", the contact hole Ct32 is an example of the "seventh contact hole", the contact hole Ct32 is an example of the "eighth contact hole", and the contact hole Ct51 is an example of the "ninth contact hole".

[0145] Next, an electronic device to which the electro-optical device 10 according to the first embodiment or the second embodiment is applied will be described. The electro-optical device 10 is suitable for applications with small-sized pixels and high-definition displays. Therefore, as an electronic device, a head-mounted display will be described as an example.

[0146] FIG. 15 is a diagram showing the appearance of the head-mounted display, and FIG. 16 is a diagram showing its optical configuration.

[0147] First, as shown in FIG. 15, the head-mounted display 300 has a temple 310, a bridge 320, and lenses 301L and 301R on the outside, similar to ordinary glasses. Also, as shown in FIG. 16, near the bridge 320 and on the back side (the lower side in the figure) of the lenses 301L and 301R, an electro-optical device 10L for the left eye and an electro-optical device 10R for the right eye are provided in the head-mounted display 300.

[0148] The image display surface of the electro-optical device 10L is arranged to face left in FIG. 17. As a result, the display image by the electro-optical device 10L is emitted in the 9 o'clock direction in the figure through the optical lens 302L. The half mirror 303L reflects the display image by the electro-optical device 10L in the 6 o'clock direction while transmitting the light incident from the 12 o'clock direction. The image display surface of the electro-optical device 10R is arranged to face right, opposite to the electro-optical device 10L. As a result, the display image by the electro-optical device 10R is emitted in the 3 o'clock direction in the figure through the optical lens 302R. The half mirror 303R reflects the display image by the electro-optical device 10R in the 6 o'clock direction while transmitting the light incident from the 12 o'clock direction.

[0149] In this configuration, the wearer of the head-mounted display 300 can observe the display images by the electro-optical devices 10L and 10R in a see-through state where they are superimposed on the external situation.

[0150] Also, in this head-mounted display 300, when the electro-optical device 10L displays the left-eye image and the electro-optical device 10R displays the right-eye image among the binocular images with parallax, the wearer can be made to perceive the displayed images as if they have depth and stereoscopic effect.

[0151] Regarding the electronic device including the electro-optical device 10, in addition to the head-mounted display 300, it is also applicable to an electronic viewfinder in a video camera, a lens-exchangeable digital camera, etc., a smartwatch, a display unit of a wearable device, a light valve of a projection type projector, etc.

[0152] From the forms exemplified above, for example, the following aspects can be grasped. In the following, for convenience of explanation, component symbols corresponding to the elements to be described in detail are attached to the components in parentheses, but it is not intended to be limited thereto.

[0153] The electro-optical device (10) according to Aspect 1 includes a substrate (102), a common electrode (133), a pixel electrode (131) provided between the substrate (102) and the common electrode (133), a light-emitting layer (132) provided between the pixel electrode (131) and the common electrode (133), a reflective electrode (181) provided between the substrate (102) and the pixel electrode (133), a first insulating layer (210, 212, 214) provided in a layer between the reflective electrode (181) and the pixel electrode (133) and having a first contact hole (Ct3), a first connection member (163) provided inside the first contact hole (Ct1) and electrically connecting the reflective electrode (181) and the pixel electrode (131) to each other, a second insulating layer (204, 207) provided in a layer on the side opposite to the pixel electrode (131) with respect to the reflective electrode (181) and having a second contact hole (Ct2), and a second connection member (162) provided inside the second contact hole (Ct2) and electrically connected to the reflective electrode (181). In plan view, the diameter (a3) of the first connection member (163) is smaller than the diameter (a2) of the second connection member (162).

[0154] According to the electro-optical device according to Aspect 1, the reflective electrode becomes flat, the aperture ratio is increased, and the light utilization efficiency is increased.

[0155] In the electro-optical device (10) according to the specific aspect 2 of aspect 1, the first insulating layer (210, 212, 214) is thinner than the second insulating layer (204, 207).

[0156] The electro-optical device (10) according to the specific aspect 3 of aspect 2 has a third insulating layer (137) provided between the pixel electrode (131) and the light-emitting layer (132) and opening in the opening region (134) included in the pixel electrode in plan view. In the opening region (134), the pixel electrode (131) and the light-emitting layer (132) are in contact with each other, and in plan view, the first contact hole (Ct3) is provided outside the opening region (134).

[0157] The electro-optical device (10) according to the specific aspect 4 of aspect 3 includes a first metal electrode (171) provided between the substrate (102) and the reflective electrode (181) and sandwiching the second insulating layer (204, 207) together with the reflective electrode (182). The reflective electrode (161) is electrically connected to the first metal electrode (171) via the second connecting member (162). In plan view, the region where the reflective electrode (181) is provided is included in the region where the first metal electrode (171) is provided.

[0158] The electro-optical device (10) according to the specific aspect 5 of aspect 4 includes a first inspection electrode (173) made of the same layer as the first metal electrode (171). The second insulating layer is a laminated insulating layer in which a fourth insulating layer (204) and a fifth insulating layer (207) are provided in this order when viewed from the first metal electrode (171) and the first inspection electrode (173). In an opening portion (Ts1) which is a partial region of the first inspection electrode (173) in plan view, the fourth insulating layer (204) is open, and the opening portion (Ts1) is filled with a sixth insulating layer (206).

[0159] The electro-optical device (10) according to a specific aspect 6 of aspect 5 includes a first connection electrode (175) formed of the same layer as the first metal electrode (171), a second connection electrode (185) formed of the same layer as the reflection electrode (181), and a third connection electrode (136) formed of the same layer as the pixel electrode (131) and electrically connected to the common electrode (133). The third connection electrode (136) is electrically connected to the second connection electrode (185) through a third contact hole (Ct33) that opens the first insulating layer (210, 212, 214), and the second connection electrode (185) is electrically connected to the first connection electrode (175) through a fourth contact hole (Ct32) that opens the fifth insulating layer (207) and the fourth insulating layer (204).

[0160] The electro-optical device (10) according to another specific aspect 7 of aspect 3 includes a second metal electrode (153) provided between the substrate (102) and the reflection electrode (181), a fourth connection electrode (183) formed of the same layer as the reflection electrode (181), and a second inspection electrode (187) provided between the second metal electrode (153) and the fourth connection electrode (183). The second insulating layer is a laminated insulating layer in which a seventh insulating layer (105), an eighth insulating layer (106), and a ninth insulating layer (208) are sequentially provided when viewed from the second metal electrode (153). The fourth connection electrode (183) is electrically connected to the second inspection electrode (187) through a fifth contact hole (Ct22) provided in the ninth insulating layer (208), and the second inspection electrode (187) is electrically connected to the second metal electrode (153) through a sixth contact hole (Ct41) provided in the seventh insulating layer (105).

[0161] An electro-optical device (10) according to another specific aspect 8 of aspect 7 includes a sixth connection electrode (155) formed in the same layer as the second metal electrode (153), a seventh connection electrode (189) formed in the same layer as the second inspection electrode (187), an eighth connection electrode (185) formed in the same layer as the reflection electrode (181), and a ninth connection electrode (136) formed in the same layer as the pixel electrode (131) and electrically connected to the common electrode (133). The ninth connection electrode (135) is electrically connected to the eighth connection electrode (185) through a seventh contact hole (Ct33) provided in the first insulating layer (210, 212, 214). The eighth connection electrode (185) is electrically connected to the seventh connection electrode (189) through an eighth contact hole (Ct32) provided in the ninth insulating layer (208). The seventh connection electrode (189) is electrically connected to the sixth connection electrode (189) through a ninth contact hole (Ct51) provided in the seventh insulating layer (105).

[0162] In an electro-optical device (10) according to another specific aspect 9 of aspect 1, the reflection electrode (181) and the first connection member (162, 167) are made of different materials from each other.

[0163] An electronic device (300) according to aspect 10 includes the electro-optical device (10) according to any one of aspects 1 to 9.

Description of Reference Numerals

[0164] 10... electro-optical device, 102... substrate, 105, 106, 204, 207, 208, 210... insulating layer, 212, 214... optical adjustment layer, 110R, 110G, 110B... pixel portion, 130... OLED, 131... pixel electrode, 132... light-emitting layer, 133... common electrode, 151, 153, 155... metal electrode, 161, 162, 163... connection member, 171, 173, 175... terminal electrode, 181... reflection electrode, 183... inspection electrode, 185... connection electrode, 300... head-mounted display.< / c>

Claims

1. A substrate, a common electrode, a pixel electrode provided between the substrate and the common electrode, a light-emitting layer provided between the pixel electrode and the common electrode, a reflective electrode provided between the substrate and the pixel electrode, a first insulating layer provided in a layer between the reflective electrode and the pixel electrode and having a first contact hole, a first connection member provided inside the first contact hole for electrically connecting the reflective electrode and the pixel electrode to each other, a second insulating layer provided in a layer on the side opposite to the pixel electrode with respect to the reflective electrode and having a second contact hole, a second connection member provided inside the second contact hole and electrically connected to the reflective electrode, characterized by comprising: in plan view, the diameter of the first connection member is smaller than the diameter of the second connection member an electro-optical device.

2. The first insulating layer is thinner than the second insulating layer The electro-optical device according to Claim 1.

3. characterized by having a third insulating layer provided between the pixel electrode and the light-emitting layer and opening in an opening region included in the pixel electrode in plan view, in the opening region, the pixel electrode and the light-emitting layer are in contact with each other, in plan view, the first contact hole is provided outside the opening region The electro-optical device according to Claim 2.

4. characterized by including a first metal electrode provided between the substrate and the reflective electrode and sandwiching the second insulating layer together with the reflective electrode, the reflective electrode is electrically connected to the first metal electrode via the second connection member, in plan view, the region where the reflective electrode is provided is included in the region where the first metal electrode is provided The electro-optical device according to Claim 3.

5. characterized by including a first inspection electrode made of the same layer as the first metal electrode, the second insulating layer is a laminated insulating layer in which a fourth insulating layer and a fifth insulating layer are provided in this order when viewed from the first metal electrode and the first inspection electrode, and in an opening portion which is a partial region of the first inspection electrode in plan view, the fourth insulating layer is open and the opening portion is filled with a sixth insulating layer The electro-optical device according to Claim 4.

6. a first connection electrode made of the same layer as the first metal electrode, a second connection electrode made of the same layer as the reflective electrode, a third connection electrode made of the same layer as the pixel electrode and electrically connected to the common electrode, characterized by comprising: the third connection electrode is electrically connected to the second connection electrode via a third contact hole provided in the first insulating layer, The second connection electrode is electrically connected to the first connection electrode through a fourth contact hole provided in the fifth insulating layer and the fourth insulating layer. The electro-optical device according to claim 5.

7. A second metal electrode provided between the substrate and the reflective electrode, A fourth connection electrode made of the same layer as the reflective electrode, A second inspection electrode provided between the second metal electrode and the fourth connection electrode, comprising, The second insulating layer, viewed from the second metal electrode, is a laminated insulating layer in which a seventh insulating layer, an eighth insulating layer, and a ninth insulating layer are provided in this order, The fourth connection electrode is electrically connected to the second inspection electrode through a fifth contact hole provided in the ninth insulating layer, The second inspection electrode is electrically connected to the second metal electrode through a sixth contact hole provided in the seventh insulating layer. The electro-optical device according to claim 3.

8. A sixth connection electrode made of the same layer as the second metal electrode, A seventh connection electrode made of the same layer as the second inspection electrode, An eighth connection electrode made of the same layer as the reflective electrode, A ninth connection electrode made of the same layer as the pixel electrode and electrically connected to the common electrode, comprising, The ninth connection electrode is electrically connected to the eighth connection electrode through a seventh contact hole provided in the first insulating layer, The eighth connection electrode is electrically connected to the seventh connection electrode through an eighth contact hole provided in the ninth insulating layer, The seventh connection electrode is electrically connected to the sixth connection electrode through a ninth contact hole provided in the seventh insulating layer. The electro-optical device according to claim 7.

9. The reflective electrode and the first connection member are made of different materials. The electro-optical device according to claim 1.

10. An electronic device having the electro-optical device according to any one of claims 1 to 9.

Images