Methods and apparatus for gas distribution

Abstract

To provide a method and an apparatus for gas distribution.SOLUTION: Various embodiments of the technique provide a 3D lattice structure having a first plenum having a first volume and a second plenum having a second volume and separated from the first plenum. A sequential inner wall separates the first plenum from the second plenum and an outer surface partially surrounds the first plenum and the second plenum.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure generally relates to methods and apparatuses for gas distribution. More specifically, the present disclosure relates to a gas distribution apparatus having an internal gyroidal structure.

Background Art

[0002] Some reaction chambers used in semiconductor manufacturing utilize a gas distribution plate (also called a showerhead) to deliver various gases, such as precursors and reactants, to a substrate and form a film on the substrate. Conventional gas distribution plates sequentially provide precursors and reactants through the same group of through-holes in the gas distribution plate.

[0003] In some cases, it may be preferable to deliver precursors and reactants into the reaction chamber through separate plenums.

Summary of the Invention

Means for Solving the Problems

[0004] Various embodiments of the present technology may provide a 3D lattice structure having a first plenum with a first volume and a second plenum with a second volume separated from the first plenum. A continuous inner wall separates the first plenum from the second plenum, and an outer surface partially surrounds the first plenum and the second plenum.

[0005] According to one aspect, the apparatus is a 3D lattice structure comprising a first plenum having a first volume, a second plenum having a second volume separated from the first plenum, a continuous inner wall separating the first plenum from the second plenum, a first inlet connected to the first plenum, a second inlet connected to the second plenum, and an outer surface partially surrounding the first plenum and the second plenum.

[0006] In one embodiment, the lattice structure is a triply periodic minimal surface structure.

[0007] In one embodiment, the first volume and the second volume are equal.

[0008] In one embodiment, the first volume and the second volume are not equal.

[0009] In one embodiment, the first plenum includes a continuous interconnected group of first channels.

[0010] In one embodiment, the first inlet is connected to a first channel among the group of first channels, and the first channel has a first width.

[0011] In one embodiment, a second channel among the group of first channels has a second width that is greater than the first width.

[0012] In one embodiment, the second plenum includes a continuous interconnected group of second channels.

[0013] In one embodiment, the second inlet is connected to a first channel among the group of second channels, and the first channel has a first width.

[0014] In one embodiment, a second channel among the group of second channels has a second width that is greater than the first width.

[0015] In one embodiment, the group of first channels is intertwined with the group of second channels.

[0016] In one embodiment, the group of first channels is connected to the first inlet.

[0017] In one embodiment, the group of second channels is connected to the second inlet.

[0018] In one embodiment, the group of first channels is non-linear.

[0019] According to another aspect, the device is a lattice structure, comprising a first plenum having a first volume and a continuous interconnected group of first channels, and a second plenum having a second volume and a continuous interconnected group of second channels. The group of first channels is intertwined with the group of second channels, and the group of first channels and the group of second channels are separated from each other by a shared inner wall. The lattice structure further comprises a first inlet connected to the first plenum, a second inlet connected to the second plenum, and an outer surface partially surrounding the first and second plenums.

[0020] In one embodiment, the first inlet is connected to a first channel of the group of first channels, and the first channel has a first width.

[0021] In one embodiment, a second channel of the group of first channels has a second width that is greater than the first width.

[0022] In one embodiment, the second inlet is connected to a first channel of the group of second channels, and the first channel has a first width.

[0023] In yet another aspect, the system includes a reaction chamber having a susceptor configured to support a substrate, and a gas distribution system disposed above the susceptor. The gas distribution system includes a first plenum having a first channel group, the first channel group including a first channel having a first width and a second channel having a second width, the second width being greater than the first width; and a second plenum separated from the first plenum and having a second channel group, the second channel group including a third channel having a third width and a fourth channel having a fourth width, the fourth width being greater than the third width. The reaction chamber further includes a first inlet connected to the first channel and a second inlet connected to the third channel. The system also includes a first container configured to contain a precursor, the first container being connected to the first inlet, and a second container configured to contain a reactant, the first container being connected to the second inlet.

[0024] In one embodiment, the first channel group is intertwined with the second channel group, and the first and second channel groups are separated from each other by a shared inner wall.

[0025] The present technology may be more fully understood by reference to the detailed description in view of the following exemplary drawings. In the following figures, like elements and steps are denoted by like reference numerals throughout.

Brief Description of the Drawings

[0026]

Figure 1

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DETAILED DESCRIPTION OF THE INVENTION

[0027] The present technology can be described based on the components of functional blocks and various processing steps. Such functional blocks can be realized by a number of components configured to perform specific functions and achieve various results. For example, the present technology may employ various gas lines, valves, power sources, pressure controllers, and filters.

[0028] Referring to FIG. 1, an exemplary system 100 may be configured to include a reactor 105 having an upper body 103 and a lower body 104. The upper body 103 and the lower body 104 may be connected to each other. More specifically, the upper body 103 and the lower body 104 of the reactor 105 may be configured to form a reaction space 190 while being in surface contact and surface sealing with each other.

[0029] In various embodiments, reactor 105 may be configured to perform processing on an object to be processed, such as substrate 125 (e.g., a wafer). For example, reactor 105 may be configured to perform heating, deposition, etching, polishing, ion implantation, and / or other processes on the object to be processed. In some embodiments, reactor 105 may be configured to perform a transport function, a vacuum sealing function, a heating function, an exhaust function, and / or other functions of the object to be processed such that the object to be processed is processed within the reactor. In some embodiments, reactor 105 may be a reactor in which an atomic layer deposition (ALD) or chemical vapor deposition (CVD) process is performed.

[0030] In various embodiments, reactor 105 may be configured to include a substrate placement unit 185 within reaction space 190. Substrate placement unit 185 may include a susceptor 115 for supporting substrate 125 and a heater (not shown) for heating the substrate supported by susceptor 115. The heater may be configured to be embedded inside susceptor 115. Substrate placement unit 185 may further include a pedestal 120 for supporting susceptor 115. For loading / unloading of the substrate, substrate placement unit 185 may be configured to be movable in the vertical direction by being connected to a drive unit (not shown).

[0031] In various embodiments, and with reference to FIGS. 1-8, upper body 103 may be configured to include a gas distribution system 110 (i.e., a showerhead). Gas distribution system 110 may be configured to include a 3D lattice structure 200 having a first plenum 600 and a second plenum 605. It should be noted that, for illustrative purposes only, FIG. 6 shows the back sides of plenums 600, 605. The 3D lattice structure may be a triply periodic minimal surface structure, such as a gyroid structure, or any other structure having two or more separate plenums. The 3D lattice structure may be formed from a plurality of unit cells, but FIG. 7 shows a single unit cell having a first plenum 600 and a second plenum 605.

[0032] The continuous inner wall 705 separates the first plenum 600 from the second plenum 605. In other words, the first plenum 600 is separated from the second plenum 605 by the continuous inner wall 705. The continuous inner wall 705 has a thickness T (FIG. 9). The continuous inner wall 705 may have a smooth or polished surface facing the inside of the plenum.

[0033] The gas distribution system 110 may further include an outer surface wall 130 that partially surrounds or otherwise defines the first and second plenums 600, 605. For example, the first and second plenums 600, 605 may be open to the reaction space 190 at a surface plane 180 directly above the susceptor 115 and the substrate 125. In other words, the outer surface wall 130 may be configured to surround the entire triply periodic minimal surface structure except for the surface plane 180.

[0034] In various embodiments, the first plenum 600 has a first volume and the second plenum 605 has a second volume. In some embodiments, the first volume may be equal to the second volume. Or, the first volume may be different from the second volume (either larger or smaller).

[0035] In various embodiments, the first plenum 600 may be configured to include a group of continuous interconnected first channels 601 that form the first volume. The group of first channels 601 may be branched (i.e., non-linear), for example, a configuration in which two or more channels 601 are connected at a first node. The group of first channels 601 may have a first width W1.

[0036] Similarly, the second plenum 605 may include a group of continuous interconnected second channels 606 that form a second volume. The group of second channels 606 may be branched, for example, configured such that two or more channels 606 are connected at a second node. The group of second channels 606 may have a second width W2.

[0037] In various embodiments, the group of first channels 600 is intertwined with the group of second channels 606.

[0038] As described above, the volume of the first plenum 600 may be the same as the volume of the second plenum 605. In such a case, the first width W1 will be equal to the second width W2. Figures 2 to 8 illustrate a gyroide structure in which the first plenum 600 has the same volume as the second plenum 605.

[0039] As another configuration, Figures 10 to 11 illustrate a gyroide structure in which the first plenum 600 has a first width W1 that is smaller than the second width W2 of the second plenum 605. Accordingly, the volume of the first plenum 600 is smaller than the volume of the second plenum 605. The gyroide structure can also be described as having an aspect ratio of W1 / W2.

[0040] In various embodiments, referring to Figure 12, the channels within each plenum may be configured such that the width varies from the upper portion 1200 of the outer surface 130 to the surface plane 180.

[0041] In some embodiments, the group of first channels 601 may have a variable width. For example, the first channel 601(a) among the group of first channels 601 may have a first width W C11 and the second channel 601(b) among the group of first channels 601 may have a second width W V1 that is larger than the first width W C12 Such a configuration may be possible. In other words, the width of the channel 601 increases from the upper portion 1200 to the surface plane 180.

[0042] Similarly, the second channel 606 group may be configured to have a variable width. For example, the first channel 606(a) among the second channel 606 group has a first width W C21 and the second channel 606(b) among the first channel 606 group has the first width W C21 and a second width W that is greater than W C22 It may be a configuration having. In other words, the width of the channel 606 increases from the upper part 1200 to the surface plane 180.

[0043] Additionally or alternatively, it may be a configuration in which the widths of the channels 601 and 606 at the surface plane 180 are changed. For example, the channels at or near the center of the gas distribution system 110 or the channels along the surface plane 180 may be narrower than the channels at the edge of the gas distribution system 110. Also, the present embodiment may be combined with the embodiment of FIG. 12.

[0044] In various embodiments, the cell size, wall thickness, and channel width can vary through a single feature. For example, in a single feature, there may be a region having a smaller cell size and providing a high density region, and another region having a larger cell size and providing a low density region. The density of the region may correspond to improving heat transfer or temperature modulation. Therefore, some regions of the feature can be designed to provide a specific temperature by having some regions with higher density cells and other regions with lower density cells.

[0045] In various embodiments, the gas distribution system 110 may be formed from a metal such as stainless steel, aluminum, a metal alloy, etc. by additive manufacturing (i.e., 3D printing) or any other suitable manufacturing process.

[0046] In various embodiments, and referring again to FIG. 1, system 100 may further include a plurality of valve manifolds such as a first valve manifold 140 and a second valve manifold 145 coupled to the gas distribution system 100. The first valve manifold 140 may be configured to include a plurality of inlets and one outlet. The outlet of the first valve manifold 140 may be coupled to the first plenum 600 via a first gas line 150. Similarly, the second valve manifold 145 may be configured to include a plurality of inlets and one outlet. The outlet of the second valve manifold 145 may be coupled to the second plenum 605 via a second gas line. For example, the first gas line 150 may be directly coupled to a channel from the first plenum 600, and the second gas line 155 may be directly coupled to a channel from the second plenum 605.

[0047] In various embodiments, system 100 may further be configured to include a plurality of containers containing different chemical substances. For example, system 100 may include a first container 160 configured to contain a first chemical substance and a second container 165 configured to contain a second chemical substance. Each of the first container 160 and the second container 165 may be configured to be coupled to one of the inlets of the first valve manifold 140 via a gas line. Thus, the first and second containers 160, 165 may be configured to supply the first chemical substance and the second chemical substance to the first plenum 600.

[0048] Similarly, system 100 may include a third container 170 configured to contain a third chemical substance and a fourth container 175 configured to contain a fourth chemical substance. Each of the third container 170 and the fourth container 175 may be configured to be coupled to one of the inlets of the second valve manifold 145 via a gas line. Thus, the third and fourth containers 170, 175 may be configured to supply the third chemical substance and the fourth chemical substance to the second plenum 605.

[0049] In various embodiments, any inlet of the first valve manifold 140 may be configured to be connected to an inert gas, and any inlet of the second valve manifold 145 may be configured to be connected to an inert gas.

[0050] Also, in various embodiments, the system 100 may be configured to include a controller (not shown), and a plurality of valves (not shown) disposed in gas lines such as gas lines 150 and 155, and gas lines from containers 160, 165, 170, and 175 to the valve manifolds 140 and 145. The controller may be configured to operate the valves according to a desired pulse scheme to provide various chemical substances to the gas distribution system 110.

[0051] In various embodiments, other components of the system may be formed using 3D printing to form gyroide structures such as insulation layers, valves, gas lines, shower heads, and chamber bodies.

[0052] During operation, the controller may be configured to open the valve and flow the first chemical substance through the first valve manifold 140 into the first plenum 600. At the same time, an inert gas may be flowed into the first plenum through the first valve manifold 140. Further, at the same time, an inert gas may be flowed into the second plenum 605 through the second valve manifold 145.

[0053] Advantages of the present invention may include that the amount of chemical substances used is reduced because the surface area on the inner wall is smaller compared to conventional systems, the frequency of cleaning the inner wall is reduced, and / or the cleaning of the inner wall is easier.

[0054] In the foregoing description, the present technology has been described with reference to specific exemplary embodiments. The specific examples illustrated and described are examples of the present technology and its best mode, and are not intended to limit the scope of the present technology in any way. Also, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the present method and system may not be described in detail. Further, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or steps between the various elements. Many alternative or additional functional relationships, or physical connections, may exist in the actual system.

[0055] The present technology has been described with reference to specific exemplary embodiments. However, various modifications and changes can be made without departing from the scope of the present technology. The present description and drawings are to be regarded as illustrative rather than restrictive, and it is intended that all variations be included within the scope of the present technology. Accordingly, the scope of the present technology should be determined not by the specific examples described above alone, but by the general embodiments described and their legal equivalents. For example, the steps described in one embodiment of a method or process may be performed in any order, unless specifically specified otherwise, and are not limited to the explicit order presented in the specific examples. Further, the components and / or elements described in one embodiment of any device may be assembled or operably configured in various forms to produce substantially the same results as the present technology, and thus are not limited to the specific configurations described in the specific examples.

[0056] Advantages, other benefits, and solutions to problems have been described above with reference to specific embodiments. Note that any element that may result in or make more prominent any benefit, advantage, solution to a problem, or any specific benefit, advantage, or solution is not to be construed as an important, required, or essential feature or component.

[0057] The terms "comprises", "comprising", or any variation thereof are intended to mean a non-limiting inclusion, such that a process, method, article, composition, or apparatus that comprises the recited elements does not include only those elements that are recited, but may also include other elements not expressly recited or inherent to such process, method, article, composition, or apparatus. In addition to what is specifically recited, the above-described structures, configurations, uses, ratios, elements, materials, or other combinations and / or variations of components used in the practice of this technology may be modified, or may be specifically adapted, without departing from their general principles, to particular environments, manufacturing specifications, design parameters, or other operating requirements.

[0058] This technology has been described above with reference to exemplary embodiments. However, modifications and alterations may be made to the exemplary embodiments without departing from the scope of this technology. These and other modifications or alterations are intended to be included within the scope of this technology as expressed in the following claims.

Claims

1. An apparatus comprising: A 3D lattice structure, a first plenum having a first volume; a second plenum having a second volume separated from the first plenum; a continuous inner wall separating the first plenum from the second plenum; A 3D lattice structure comprising: a first inlet coupled to the first plenum; a second inlet coupled to the second plenum; an exterior surface partially surrounding the first plenum and the second plenum.

2. The apparatus of claim 1 , wherein the grating structure is a triply periodic minimal surface structure.

3. The apparatus of claim 1 , wherein the first volume and the second volume are equal.

4. The apparatus of claim 1 , wherein the first volume and the second volume are unequal.

5. The apparatus of claim 1 , wherein the first plenum comprises a first set of continuous interconnected channels.

6. 6. The apparatus of claim 5, wherein the first inlet is coupled to a first channel of the first set of channels, the first channel having a first width.

7. The apparatus of claim 6 , wherein a second channel of the first group of channels has a second width greater than the first width.

8. The apparatus of claim 1 , wherein the second plenum comprises a second set of continuous interconnected channels.

9. 9. The apparatus of claim 8, wherein the second inlet is coupled to a first channel of the second set of channels, the first channel having a first width.

10. The apparatus of claim 9 , wherein a second channel of the second group of channels has a second width greater than the first width.

11. The device of claim 5 , wherein the first set of channels are intertwined with the second set of channels.

12. The apparatus of claim 5 , wherein the first set of channels is connected to the first inlet.

13. The apparatus of claim 5 , wherein a second set of channels is connected to the second inlet.

14. The apparatus of claim 5 , wherein the first set of channels is non-linear.

15. An apparatus comprising: A lattice structure, a first plenum having a first volume and including a first set of continuous interconnected channels; a second plenum having a second volume and including a second set of continuous interconnected channels; a lattice structure, the first group of channels intertwining with the second group of channels, the first group of channels and the second group of channels being separated from one another by a shared interior wall; a first inlet coupled to the first plenum; a second inlet coupled to the second plenum; an exterior surface partially surrounding the first plenum and the second plenum.

16. 16. The apparatus of claim 15, wherein the first inlet is coupled to a first channel of the first set of channels, the first channel having a first width.

17. 17. The apparatus of claim 16, wherein a second channel of the first group of channels has a second width greater than the first width.

18. 16. The apparatus of claim 15, wherein the second inlet is coupled to a first channel of the second set of channels, the first channel having a first width.

19. 1. A system comprising: A reaction chamber comprising: a susceptor configured to support a substrate; a gas distribution system disposed above the susceptor, a first plenum having a first group of channels, the first group of channels including a first channel having a first width and a second channel having a second width, the second width being greater than the first width; a second plenum separated from the first plenum and having a second set of channels, the second set of channels including a third channel having a third width and a fourth channel having a fourth width, the fourth width being greater than the third width; A gas distribution system comprising: A reaction chamber comprising: a first inlet coupled to the first channel; a second inlet coupled to the third channel; and a first vessel configured to contain a precursor, the first vessel being coupled to the first inlet; a second vessel configured to contain a reactant, the first vessel being coupled to the second inlet; and A system comprising:

20. 20. The system of claim 19, wherein the first group of channels is intertwined with the second group of channels, the first group of channels and the second group of channels being separated from one another by a shared interior wall.

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