Imaging device
By strategically locating the circuit region outside high-stress areas in an imaging device with a curved imaging sensor, the device effectively suppresses circuit breakage and display abnormalities, achieving a clear image with reduced lens count.
Patent Information
- Application Number
- JP2023213001
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-12-18
- Publication Date
- 2025-06-30
AI Technical Summary
In imaging devices with curved imaging sensors, as the radius of curvature decreases, stress increases, leading to circuit damage and display abnormalities due to increased resistance in wiring, contact portions, and pads.
The imaging device is designed with a pedestal having a curved concave portion, where the imaging sensor is curved and fixed, and a lens guides imaging light. The circuit region is strategically located outside the element and partition regions, where stress is relatively small, to prevent circuit breakage.
This configuration effectively suppresses circuit breakage in the imaging sensor by placing the circuit in a region with lower stress, thereby reducing display abnormalities and ensuring a clear image up to the peripheral viewing angle.
Smart Images
Figure 2025096968000001_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to an imaging device.
Background Art
[0002] Conventionally, as described in Patent Document 1, there is known an imaging device including an imaging sensor that is curved and fixed to a concave curved portion provided on a support member.
Prior Art Documents
Patent Documents
[0003]
Patent Document 1
Summary of the Invention
Problems to be Solved by the Invention
[0004] In the imaging device as described in Patent Document 1, as the radius of curvature of the imaging sensor is decreased, the number of lenses can be reduced, and a clear image can be generated up to the peripheral angle of view. However, as the radius of curvature of the imaging sensor decreases, the stress generated in the imaging sensor increases. As a result, the stress generated in the wiring, contact portions such as vias, and circuits such as pads in the imaging sensor increases. For this reason, the circuit in the imaging sensor is damaged. When the circuit is damaged, circuit abnormalities such as an increase in the resistance of the wiring, contact portions, and pads occur. Due to this circuit abnormality, display abnormalities such as noise occurring in the generated image occur.
[0005] An object of the present disclosure is to provide an imaging device that suppresses damage to a circuit in an imaging sensor.
Means for Solving the Problems
[0006] The invention according to claim 1 is an imaging device, comprising: a pedestal (20) having a curved concave portion (200); an imaging sensor (30) that is curved along the concave portion and fixed to the concave portion; and a lens (28) that guides imaging light to the imaging sensor. The imaging sensor includes a substrate (304) including two opposing first sides (312) and two opposing second sides (314) that are connected to the first sides and extend in a direction intersecting the direction in which the first sides extend, and the length of the second sides is shorter than the length of the first sides. The imaging sensor further includes an element region (306) that is a region where an imaging element is disposed, and a circuit region (310) that is a region where a circuit connected to the imaging element is disposed. The element region includes two opposing region sides (321) that extend in a direction along the first sides. A straight line that passes through a point (Ps) on the first side where the distance from the center of the first side is one-eighth of the length of the first side and extends in a direction along the second sides is defined as a first dividing line (Ls1), and a straight line that passes through the center between the first side and the region sides and extends in a direction along the first sides is defined as a second dividing line (Ls2). The circuit region is an imaging device that is partitioned by the first dividing line, the second dividing line, and a side (T) that extends in the thickness direction of the substrate, and is located outside the element region. Also, the invention according to claim 3 is an imaging device, comprising: a pedestal (20) having a curved concave portion (200); an imaging sensor (30) that is curved along the concave portion and fixed to the concave portion; and a lens (28) that guides imaging light to the imaging sensor. The imaging sensor includes a substrate (304) having two opposing first sides (331) and two opposing second sides (332) that are connected to the first sides and extend in a direction intersecting the direction in which the first sides extend, and the length of the second sides is the same as the length of the first sides. The imaging sensor also has an element region (306) where the imaging element is disposed and a circuit region (310) where a circuit connected to the imaging element is disposed. A straight line passing through a point (Ps1) on the first side where the distance from the center of the first side is half of the first distance (X1) and extending in the direction along the second side is defined as a first dividing line (Ls1), and a straight line that passes through the substrate, extends in the direction along the first side, and has a distance of the second distance (Y1) from the first side in the direction along the second side is defined as a second dividing line (Ls2). Let the length of the first side and the second side be H, the first distance be X1, the second distance be Y1, and the angle formed by a straight line connecting the center of curvature (Ob) of the substrate and both ends (305) of the opposing substrate be θ. Then, θ is 41° or more, and the region (341) defined by the first dividing line, the second dividing line, and a side (T) extending in the thickness direction of the substrate is 0.0405×θ - 1.4563 < X1 / H 0.0034×θ - 0.1164 < Y1 / H formed so as to satisfy the above conditions. The circuit region is located outside the region (341) defined by the first dividing line, the second dividing line, and the side (T) extending in the thickness direction of the substrate and the element region, and is an imaging device.
[0007] Thereby, the circuit is disposed in a region where the stress is relatively small. For this reason, breakage of the circuit in the imaging sensor is suppressed.
[0008] Note that the reference numerals in parentheses attached to each component etc. indicate an example of the correspondence relationship between the component etc. and the specific components etc. described in the embodiments described later.
Brief Description of the Drawings
[0009]
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Embodiments for Carrying Out the Invention
[0010] Hereinafter, embodiments will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are denoted by the same reference numerals, and the description thereof will be omitted.
[0011] (First Embodiment) In the imaging device of this embodiment, damage to the circuit in the imaging sensor is suppressed. Further, the imaging device of this embodiment is mounted on a vehicle and takes in imaging light for imaging an object located around the vehicle.
[0012] Specifically, as shown in FIG. 1, the imaging device 5 includes a support member 10, a pedestal 20, a lens barrel 25, a lens 28, an imaging sensor 30, and a recessed joint member 40.
[0013] The support member 10 has a printed circuit board. Further, the support member 10 has, on its printed circuit board, an amplification circuit, a signal processing circuit, etc. (not shown), or electronic components such as capacitors and resistors.
[0014] The pedestal 20 is formed of glass, ceramics, aluminum, etc. Further, the pedestal 20 is fixed on one surface 100 of the support member 10 via a joining member such as an adhesive (not shown). Also, the pedestal 20 has a concave portion 200.
[0015] The concave portion 200 is recessed from a pedestal surface 202 which is a surface of the pedestal 20 on the side opposite to the support member 10 side. Further, the concave portion 200 has a curved shape with a predetermined radius of curvature.
[0016] The lens barrel 25 is formed in a cylindrical shape. Also, the lens barrel 25 is fixed on one surface 100 of the support member 10 via a joining member such as an adhesive (not shown). Further, the pedestal 20 is disposed inside the lens barrel 25. Also, the lens barrel 25 has a holding portion 250. The holding portion 250 includes a plurality of convex portions protruding from the inner wall surface of the lens barrel 25. Further, the convex portions are arranged in the axial direction of the lens barrel 25.
[0017] The lens 28 is formed of glass or the like. Also, both ends of the lens 28 are sandwiched between the convex portions of the holding portion 250. Thereby, the lens 28 is held by the holding portion 250. Further, imaging light is taken into an imaging sensor 30 described later via the lens 28. Note that the positions of the lens 28 and the lens barrel 25 are adjusted so that the imaging light is taken into the imaging sensor 30.
[0018] The imaging sensor 30 has a curved shape along the concave portion 200 and is fixed to the concave portion 200. Also, the imaging sensor 30 is electrically connected to the support member 10 by bonding wires or the like (not shown). Further, as shown in FIGS. 1 and 2, the imaging sensor 30 has a fixed surface 300, a sensor surface 302, a substrate 304, an element region 306, a partition region 308, and a circuit region 310.
[0019] The fixed surface 300 is the surface fixed to the recess 200 via the joining member 40 for the recess. The joining member 40 for the recess is a thermosetting resin such as an epoxy resin, for example. The sensor surface 302 is the surface on the side opposite to the fixed surface 300 and is the surface on which the imaging light that has passed through the lens 28 hits.
[0020] The substrate 304 is formed of silicon or the like. Further, the substrate 304 has a planar rectangular shape before being disposed in the recess 200, and has a curved shape along the recess 200 when being disposed in the recess 200. The thickness of the substrate 304 is, for example, 10 μm or more and 100 μm or less. Further, the substrate 304 includes two opposing long sides 312 and two opposing short sides 314.
[0021] The long side 312 corresponds to the first side. The short side 314 corresponds to the second side. Further, the long side 312 and the short side 314 are connected. Further, the short side 314 extends in a direction intersecting with the direction in which the long side 312 extends, here, in a direction orthogonal to the long side 312. Further, the length of the short side 314 is shorter than the length of the long side 312. For this reason, the aspect ratio, which is the ratio of the length of the long side 312 to the length of the short side 314, is larger than 1.0.
[0022] Here, as shown in FIG. 3, the angle formed by a straight line connecting the center of curvature Ob of the substrate 304 and both end portions 305 of the opposing substrate 304 is defined as the bending angle θ. The length of both end portions 305 of the opposing substrate 304 is defined as the substrate length A. Here, the substrate length is the arc length between the centers of both end portions 305 in the thickness direction of the substrate 304. Further, the distance from the center of curvature Ob to the centers of both end portions 305 in the thickness direction of the substrate 304 is defined as the sensor radius of curvature Rb. Note that the substrate length A is not limited to being the arc length between the centers of both end portions 305 in the thickness direction of the substrate 304. Also, the sensor radius of curvature Rb is not limited to being the length from the center of curvature Ob to the centers of both end portions 305 in the thickness direction of the substrate 304. For example, the substrate length A may be the length of the long side 312. That is, the substrate length A may be the arc length between the ends on the side opposite to the center of curvature Ob among both end portions 305. In this case, the sensor radius of curvature Rb is the length from the center of curvature Ob to the end on the side of the center of curvature Ob or the side opposite to the center of curvature Ob among both end portions 305.
[0023] Then, the bending angle θ is expressed as in the following relational expression (1) using the substrate length A and the sensor radius of curvature Rb. Also, it is preferable that the bending angle θ is 41° or more and 180° or less.
[0024] θ = (180 × A) ÷ (π × Rb) ···(1)
[0025] Returning to FIG. 2, the element region 306 is a region where imaging elements such as CCD elements and CMOS elements are two-dimensionally arranged. Note that CCD is an abbreviation for Charge Coupled Device. CMOS is an abbreviation for Complementary Metal Oxide Semiconductor.
[0026] Further, the element region 306 includes two opposing first region sides 321 and two opposing second region sides 322. The first region side 321 extends in a direction along the long side 312. The second region side 322 is connected to the first region side 321 and extends in a direction along the short side 314. Here, the length of the first region side 321 is longer than the length of the second region side 322, but it is not limited to this. The length of the first region side 321 may be equal to or less than the length of the second region side 322.
[0027] Also, here, a point on the long side 312 where the distance from the center of the long side 312 is one-eighth of the length of the long side 312 is defined as the division point Ps. A straight line passing through the division point Ps and extending in the direction along the short side 314 is defined as the first division line Ls1. A straight line passing through the center between the long side 312 and the first region side 321 and extending in the direction along the long side 312 is defined as the second division line Ls2. A side extending in the thickness direction of the substrate 304 is defined as the thickness side T.
[0028] The partition region 308 is a region partitioned by the first division line Ls1, the second division line Ls2, and the thickness side T. In the partition region 308, an imaging element and a circuit described later are not arranged.
[0029] The circuit region 310 is a region where a circuit connected to the imaging element is arranged. The circuit connected to the imaging element is, for example, wiring in the imaging sensor 30, contact portions such as vias, pads, etc. Also, the circuit region 310 is located outside the element region 306 and the partition region 308.
[0030] As described above, the imaging device 5 of the first embodiment is configured. In this imaging device 5, imaging light for imaging an object hits the element region 306 through the lens 28. At this time, signals from the imaging element arranged in the element region 306 are signal-processed by an amplification circuit and a signal processing circuit on the printed circuit board of the support member 10. The signal-processed signal is output to a display (not shown), for example. As a result, the imaged object is displayed on the display screen. Next, the suppression of circuit breakage in the imaging sensor 30 in the imaging device 5 will be described.
[0031] Here, the stress applied to the imaging sensor 30 in a state where the imaging sensor 30 is curved such that the sensor surface 302 side is concave and the fixed surface 300 side is convex was investigated, and the results shown in FIG. 4 were obtained. Note that FIG. 4 is a simulation result regarding the stress on the fixed surface 300 side of the imaging sensor 30.
[0032] As shown in FIG. 4, it was confirmed that relatively large compressive stress is generated in the partition region 308 on the fixed surface 300. Furthermore, the compressive stress applied to the partition region 308 is the maximum among the compressive stresses applied to the imaging sensor 30. The maximum compressive stress was 1900 MPa.
[0033] Also, here, when the imaging device 5 in which a circuit abnormality occurred was analyzed, it was found that the compressive stress at the time of breakage such as buckling in the circuit is 1800 MPa. Therefore, when the compressive stress applied to the circuit becomes 1800 MPa or more, the circuit breaks. When the circuit breaks, circuit abnormalities such as an increase in the resistance of wiring, contact portions, and pads occur. Due to this circuit abnormality, display abnormalities such as noise generation in the generated image occur. Furthermore, the compressive stress applied to the partition region 308 was 1800 MPa or more.
[0034] In contrast, in the imaging device 5 of the present embodiment, the circuit region 310 is located outside the element region 306 and the partition region 308.
[0035] As a result, the circuit is arranged in a region where the compressive stress is relatively small. Therefore, breakage of the circuit in the imaging sensor 30 is suppressed.
[0036] In addition, the imaging device 5 of the first embodiment also exhibits the effects described below.
[0037] [1] Here, as described above, as the sensor radius of curvature Rb decreases, the stress generated in the imaging sensor 30 increases. Also, as the sensor radius of curvature Rb decreases, the bending angle θ increases. Therefore, as shown in FIG. 5, as the bending angle θ increases, the compressive stress generated in the imaging sensor 30 increases. FIG. 5 is a relational diagram of the bending angle θ and the compressive stress applied to the imaging sensor 30 when the thickness of the substrate 304 is fixed. Further, in FIG. 5, the thickness of the substrate 304 is set to be 10 μm or more and 100 μm or less. And when the bending angle θ is 41° or more, the compressive stress applied to the partition region 308 tends to be 1800 MPa or more, which easily damages the circuit.
[0038] In contrast, in the imaging device 5, even when the bending angle θ is 41° or more, the circuit region 310 is located outside the element region 306 and the partition region 308.
[0039] As a result, even when the bending angle θ is relatively large, that is, when the sensor radius of curvature Rb is relatively small, the circuit is arranged in a region where the compressive stress is relatively small. Therefore, breakage of the circuit in the imaging sensor 30 is suppressed. Also, since the bending angle θ can be made relatively large, the sensor radius of curvature Rb can be made relatively small. Therefore, the number of lenses 28 can be reduced, and a clear image can be generated up to the peripheral viewing angle.
[0040] (Second Embodiment) In the second embodiment, the form of the imaging sensor 30 is different from that of the first embodiment. Other than this, it is the same as the first embodiment.
[0041] Specifically, as shown in FIG. 6, the substrate 304 of the imaging sensor 30 has two opposing first substrate sides 331 and two opposing second substrate sides 332 instead of the long side 312 and the short side 314.
[0042] The first substrate side 331 corresponds to the first side. The second substrate side 332 corresponds to the second side. Also, the first substrate side 331 and the second substrate side 332 are connected. Further, the second substrate side 332 extends in a direction intersecting the direction in which the first substrate side 331 extends, here, in a direction perpendicular to the first substrate side 331. The length of the first substrate side 331 and the length of the second substrate side 332 are the same. For this reason, the substrate 304 is in the shape of a square plate before being disposed in the recess 200. Also, the aspect ratio, which is the ratio of the length of the first substrate side 331 to the length of the second substrate side 332, is 1.0. Here, "the same" includes the manufacturing error range.
[0043] Furthermore, the length of the first region side 321 and the length of the second region side 322 in the element region 306 of the imaging sensor 30 are the same. Furthermore, the lengths of the first region side 321 and the second region side 322 are, for example, 4.0 mm or more and 8.0 mm or less. Note that the length of the first region side 321 and the length of the second region side 322 are not limited to being the same and may be different.
[0044] Also, the imaging sensor 30 has a first region 341 and a second region 342 instead of the partition region 308.
[0045] Here, a point on the first substrate side 331 where the distance from the center of the first substrate side 331 is half of the first distance X1 is defined as the first division point Ps1. A straight line passing through the first division point Ps1 and extending in the direction along the second substrate side 332 is defined as the first division line Ls1. A straight line where the distance from the first substrate side 331 in the direction along the second substrate side 332 is the second distance Y1, passing through the substrate 304 and extending in the direction along the first substrate side 331, is defined as the second division line Ls2. A point on the second substrate side 332 where the distance from the center of the second substrate side 332 is half of the third distance X2 is defined as the second division point Ps2. A straight line passing through the second division point Ps2 and extending in the direction along the first substrate side 331 is defined as the third division line Ls3. A straight line where the distance from the second substrate side 332 in the direction along the first substrate side 331 is the fourth distance Y2, passing through the substrate 304 and extending in the direction along the second substrate side 332, is defined as the fourth division line Ls4.
[0046] And the first region 341 is a region partitioned by the first division line Ls1, the second division line Ls2, and the thickness side T. Also, the second region 342 is a region partitioned by the third division line Ls3, the fourth division line Ls4, and the thickness side T.
[0047] Furthermore, the circuit region 310 is located outside the element region 306, the first region 341, and the second region 342. For this reason, in the first region 341 and the second region 342, circuits such as wirings, contact portions such as vias, and pads in the imaging sensor 30 are not arranged.
[0048] Also, here, let the length of the first substrate side 331 be H. Let the length of the second substrate side 332 be V. Since the length of the first substrate side 331 is the same as the length of the second substrate side 332, H = V is set. Let the ratio of the first distance X1 to H be X1 / H. Let the ratio of the second distance Y1 to V be Y1 / V.
[0049] Furthermore, here, when the size of the substrate 304 is fixed, X1 / H and Y1 / V, which become 1800 MPa at which the circuit is likely to be damaged when the bending angle θ is 41° or more and less than a certain value, were investigated, and the results shown in FIGS. 7 and 8 were obtained. FIG. 7 is a relational diagram of the bending angle θ and X1 / H. FIG. 8 is a relational diagram of the bending angle θ and Y1 / V. In FIGS. 7 and 8, H and V are set to be 5.0 mm or more and 10.0 mm or less. The thickness of the substrate 304 is set to be 10 μm or more and 100 μm or less.
[0050] And the relationships between the bending angle θ and X1 / H, and between the bending angle θ and Y1 / V, which become 1800 MPa at which the circuit is likely to be damaged, were expressed as the left sides of the following relational expressions (2-1) and (2-2). Based on this, the first region 341 is formed so that the above relational expressions (2-1) and (2-2) hold. As described above, V is set to be 5.0 mm or more and 10.0 mm or less, and the lengths of the first region side 321 and the second region side 322 are set to be 4.0 mm or more and 8.0 mm or less. From this, the distance between the first region side 321 and the first substrate side 331 is set to be 1.0 mm or more and 2.0 mm or less. Also, half of the distance between the first region side 321 and the first substrate side 331 is set to be 0.5 mm or more and 1.0 mm or less. Therefore, the maximum value of Y1 / V is, for example, 0.5÷5 = 0.10, or 1.0÷10 = 0.10.
[0051] 0.0405×θ - 1.4563 < X1 / H ≦ 0.25 ···(2-1) 0.0034×θ - 0.1164 < Y1 / V ≦ 0.10 ···(2-2)
[0052] Thereby, the first region 341 is a region where the compressive stress becomes 1800 MPa or more at which the circuit is likely to be damaged. Also, as described above, since the circuit region 310 is located outside the first region 341, the compressive stress applied to the circuit region 310 is likely to be less than 1800 MPa at which the circuit is likely to be damaged. Therefore, damage to the circuit in the imaging sensor 30 is suppressed.
[0053] Furthermore, here, let the length of the second region 342 in the direction along the second substrate side 332 be X2, and the length of the second region 342 in the direction along the first substrate side 331 be Y2. Let the ratio of the third distance X2 to V be X2 / V, and the ratio of the fourth distance Y2 to H be Y2 / H.
[0054] And, similar to the above, the second region 342 is formed such that the following relational expressions (2-3) and (2-4) are satisfied. Thereby, the second region 342 is made into a region where the compressive stress is 1800 MPa or more, which is likely to damage the circuit. Also, as described above, since the circuit region 310 is located outside the second region 342, the compressive stress applied to the circuit region 310 is likely to be less than 1800 MPa, which is likely to damage the circuit. Therefore, breakage of the circuit in the imaging sensor 30 is suppressed.
[0055] 0.0405×θ - 1.4563 < X2 / V ≤ 0.25 ···(2-3) 0.0034×θ - 0.1164 < Y2 / H ≤ 0.10 ···(2-4)
[0056] As described above, the imaging device 5 of the second embodiment is configured. Also in this second embodiment, the same effects as those of the first embodiment are achieved.
[0057] (Other Embodiments) The present disclosure is not limited to the above embodiments, and can be appropriately modified with respect to the above embodiments. Also, in each of the above embodiments, it goes without saying that the elements constituting the embodiment are not necessarily essential, except in cases where it is explicitly stated that they are essential and in cases where they are considered to be clearly essential in principle.
[0058] In each of the above embodiments, the imaging device 5 is used in a vehicle. In contrast, the imaging device 5 is not limited to being used in a vehicle, and may be used, for example, in a building or equipment.
[0059] The above embodiments may be appropriately combined.
Description of Reference Numerals
[0060] 20 pedestals 28 lenses 30 imaging sensors 200 recesses 304 substrates 306 element regions 308 partition regions 310 circuit regions
Claims
1. An imaging device, comprising: a pedestal (20) having a curved recess (200); an imaging sensor (30) having a curved shape along the recess and fixed to the recess; a lens (28) that guides imaging light to the imaging sensor; wherein the imaging sensor includes a substrate (304) including two opposing first sides (312) and two opposing second sides (314) that are connected to the first sides and extend in a direction intersecting the direction in which the first sides extend, and the length of the second sides is shorter than the length of the first sides; an element region (306) that is a region where an imaging element is disposed; a circuit region (310) that is a region where a circuit connected to the imaging element is disposed; wherein the element region includes two opposing region sides (321) that extend in a direction along the first sides; a straight line passing through a point (Ps) on the first side where the distance from the center of the first side is one-eighth of the length of the first side and extending in a direction along the second side is defined as a first dividing line (Ls1); when a straight line passing through the center between the first side and the region side and extending in a direction along the first side is defined as a second dividing line (Ls2), the circuit region is a region (308) defined by the first dividing line, the second dividing line, and a side (T) extending in the thickness direction of the substrate, and an imaging device located outside the element region.
2. The thickness of the substrate is 10 μm or more and 100 μm or less, and a bending angle (θ), which is an angle formed by a straight line connecting the center of curvature (Ob) of the substrate and both end portions (305) of the opposing substrate, is 41° or more. The imaging device according to Claim 1.
3. An imaging device, comprising: a pedestal (20) having a curved recess (200); an imaging sensor (30) having a curved shape along the recess and fixed to the recess; a lens (28) that guides imaging light to the imaging sensor; wherein the imaging sensor includes a substrate (304) including two opposing first sides (331) and two opposing second sides (332) that are connected to the first sides and extend in a direction intersecting the direction in which the first sides extend, and the length of the second sides is the same as the length of the first sides; an element region (306) that is a region where an imaging element is disposed; a circuit region (310) that is a region where a circuit connected to the imaging element is disposed; wherein A straight line passing through a point (Ps1) on the first side where the distance from the center of the first side is half of the first distance (X1) and extending in the direction along the second side is defined as a first dividing line (Ls1), A straight line that is at a second distance (Y1) from the first side in the direction along the second side, passes through the substrate, and extends in the direction along the first side is defined as a second dividing line (Ls2), Let the lengths of the first side and the second side be H, Let the first distance be X1, Let the second distance be Y1, Let the angle formed by a straight line connecting the center of curvature (Ob) of the substrate and both opposite ends (305) of the substrate be θ, The θ is 41° or more, The region (341) partitioned by the first dividing line, the second dividing line, and the side (T) extending in the thickness direction of the substrate, 0.0405×θ - 1.4563 < X1 / H 0.0034×θ - 0.1164 < Y1 / H is formed so as to satisfy the condition, The circuit region is an imaging device located outside the region (341) partitioned by the first dividing line, the second dividing line, and the side (T) extending in the thickness direction of the substrate and the element region.
4. A straight line passing through a point (Ps3) on the second side where the distance from the center of the second side is half of the third distance (X2) and extending in the direction along the first side is defined as a third dividing line (Ls3), A straight line that is at a fourth distance (Y2) from the second side in the direction along the first side, passes through the substrate, and extends in the direction along the second side is defined as a fourth dividing line (Ls4), Let the third distance be X2, Let the fourth distance be Y2, The region (342) partitioned by the third dividing line, the fourth dividing line, and the side (T) extending in the thickness direction of the substrate, 0.0405×θ - 1.4563 < X2 / H 0.0034×θ - 0.1164 < Y2 / H is formed so as to satisfy the condition, The circuit region is the imaging device according to claim 3, which is located outside the region (342) partitioned by the third dividing line, the fourth dividing line, and the side (T) extending in the thickness direction of the substrate.
5. The compressive stress applied to the region partitioned by the first dividing line, the second dividing line, and the side (T) extending in the thickness direction of the substrate is the maximum among the compressive stresses applied to the imaging sensor. The imaging device according to any one of claims 1 to 4.
6. The imaging device according to any one of claims 1 to 4, wherein the compressive stress applied to the region defined by the first dividing line, the second dividing line, and the side (T) extending in the thickness direction of the substrate is 1800 MPa or more.
Citation Information
Patent Citations
Image pickup device, manufacturing method thereof, and manufacturing apparatus thereof
JP2005045151A