High-frequency module and communication device

Abstract

To provide a high-frequency module that can reduce interference caused by unwanted waves between a first electronic component and a second electronic component.SOLUTION: A high-frequency module 1 includes a mounting board 51, a first electronic component 50A, a second electronic component 50B, a third electronic component 50C, and a radio wave absorbing material 55. The mounting board 51 has a first main surface 51a and a second main surface 51b that face each other. The first electronic component 50A is disposed on the first main surface 51a of the mounting board 51. The second electronic component 50B is disposed on the first main surface 51a of the mounting board 51. The third electronic component 50C is disposed between the first electronic component 50A and the second electronic component 50B on the first main surface 51a of the mounting board 51. The radio wave absorbing material 55 is provided on at least a part of an outer surface 50r of the third electronic component 50C. The radio wave absorbing material 55 contains a magnetic material.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module and a communication device including a plurality of electronic components on a mounting substrate.

Background Art

[0002] The electronic circuit package (high-frequency module) described in Patent Document 1 includes a substrate (mounting substrate), a plurality of electronic components (first to third electronic components), a molding resin, a magnetic film, and a metal film. The plurality of electronic components are arranged on the surface of the substrate. The molding resin is provided on the surface of the substrate so as to cover the plurality of electronic components. The magnetic film is provided so as to cover the outer surface of the molding resin and the side surface of the substrate. The metal film covers the molding resin via the magnetic film.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the configuration of Patent Document 1, the magnetic film is provided so as to cover the entire molding resin (that is, the entire package). Therefore, there is no magnetic film between the electronic component (first electronic component) that generates unnecessary waves and another electronic component (second electronic component) arranged around the electronic component. For this reason, it is difficult to reduce the interference caused by the unnecessary waves between the plurality of electronic components in the package.

[0005] In view of the above problems, an object of the present invention is to provide a high-frequency module and a communication device capable of reducing interference caused by unnecessary waves between a first electronic component and a second electronic component.

Means for Solving the Problems

[0006] A high-frequency module according to one aspect of the present invention includes a mounting substrate, a first electronic component, a second electronic component, a third electronic component, and a radio wave absorbing material. The mounting substrate has a first main surface and a second main surface that face each other. The first electronic component is disposed on the first main surface of the mounting substrate. The second electronic component is disposed on the first main surface of the mounting substrate. The third electronic component is disposed between the first electronic component and the second electronic component in a plan view from the thickness direction of the mounting substrate on the first main surface of the mounting substrate. The radio wave absorbing material is provided on at least a part of the outer surface of the third electronic component. The radio wave absorbing material contains a magnetic material.

[0007] A communication device according to one aspect of the present invention includes the high-frequency module and a signal processing circuit. The signal processing circuit is connected to the high-frequency module and processes a high-frequency signal.

Advantages of the Invention

[0008] According to the high-frequency module and the communication device of the present invention, there is an advantage that interference caused by unnecessary waves between the first electronic component and the second electronic component can be reduced.

Brief Description of the Drawings

[0009]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

[0010] (Embodiment 1) The high-frequency module 1 and the communication device 30 according to Embodiment 1 will be described in detail with reference to the drawings.

[0011] (1) Overview As shown in FIG. 2, the high-frequency module 1 according to Embodiment 1 includes a mounting substrate 51, a first electronic component 50A, a second electronic component 50B, a third electronic component 50C, and a radio wave absorber 55. The mounting substrate 51 has a first main surface 51a and a second main surface 51b that face each other. The first electronic component 50A is disposed on the first main surface 51a of the mounting substrate 51. The second electronic component 50B is disposed on the first main surface 51a of the mounting substrate 51. The third electronic component 50C is disposed between the first electronic component 50A and the second electronic component 50B in a plan view from the thickness direction D1 of the mounting substrate 51 on the first main surface 51a of the mounting substrate 51. The radio wave absorber 55 is provided on at least a part of the outer surface 50r of the third electronic component 50C. The radio wave absorber 55 contains a magnetic material.

[0012] According to this configuration, the radio wave absorber 55 provided on at least a part of the outer surface 50r of the third electronic component 50C can absorb unnecessary waves (radio waves) propagating between the first electronic component 50A and the second electronic component 50B. Thereby, interference caused by unnecessary waves between the first electronic component 50A and the second electronic component 50B can be reduced.

[0013] (2) Configuration of the communication device As shown in FIG. 1, the communication device 30 is a communication device including a high-frequency module 1. The communication device 30 is, for example, a mobile terminal (e.g., a smartphone), but is not limited thereto, and may be, for example, a wearable terminal (e.g., a smartwatch). The high-frequency module 1 is a module capable of supporting, for example, 4G (Fourth Generation Mobile Communication) standard and 5G (Fifth Generation Mobile Communication) standard. The 4G standard is, for example, 3GPP (registered trademark, Third Generation Partnership Project), or the LTE standard (registered trademark, Long Term Evolution). The 5G standard is, for example, 5G NR (New Radio).

[0014] In addition to the high-frequency module 1, the communication device 30 includes a signal processing circuit 2 and an antenna 3.

[0015] The high-frequency module 1 is configured to amplify the received signal (high-frequency signal) received by the antenna 3 and output it to the signal processing circuit 2. Further, the high-frequency module 1 is configured to amplify the transmission signal (high-frequency signal) output from the signal processing circuit 2 and transmit it from the antenna 3. The high-frequency module 1 is controlled by, for example, the signal processing circuit 2.

[0016] The signal processing circuit 2 is connected to the high-frequency module 1 and is configured to process the received signal output from the high-frequency module 1. The signal processing circuit 2 is configured to process the transmission signal output to the high-frequency module 1. The signal processing circuit 2 includes an RF (Radio Frequency) signal processing circuit 2a and a baseband signal processing circuit 2b.

[0017] The RF signal processing circuit 2a is, for example, an RFIC (Radio Frequency Integrated Circuit), and performs signal processing on high-frequency signals (transmission signals and reception signals). The RF signal processing circuit 2a performs signal processing such as down-conversion on the reception signal output from the high-frequency module 1 and outputs it to the baseband signal processing circuit 2b. Further, the RF signal processing circuit 2a performs signal processing such as up-conversion on the transmission signal output from the baseband signal processing circuit 2b and outputs it to the high-frequency module 1.

[0018] The baseband signal processing circuit 2b is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 2b outputs the reception signal output from the RF signal processing circuit 2a to the outside. This output signal (reception signal) is used, for example, as an image signal for image display or as an audio signal for a call. Further, the baseband signal processing circuit 2b generates a transmission signal from the baseband signal (for example, an audio signal and an image signal) input from the outside, and outputs the generated transmission signal to the RF signal processing circuit 2a.

[0019] (3) Configuration of the high-frequency module As shown in FIG. 1, the high-frequency module 1 includes a plurality of external terminals 5a to 5e, a plurality of electronic components 50, and a plurality of signal paths (the first signal path L1 and the second signal path L2 in the example of FIG. 1). The plurality of electronic components 50 include, in the example of FIG. 1, a switch 6, a transmission filter 7, a reception filter 8, a power amplifier 10, a low-noise amplifier 11, matching circuits 13 to 16, and a controller 19.

[0020] The external terminal 5a is an antenna terminal to which the antenna 3 is connected. The external terminal 5b is connected to an output section (not shown) of the signal processing circuit 2 and is an input terminal to which the transmission signal output from the output section of the signal processing circuit 2 is input. The external terminal 5c is connected to an input section (not shown) of the signal processing circuit 2 and is an output terminal that outputs the received signal processed by the high-frequency module 1 to the input section of the signal processing circuit 2. The external terminal 5d is connected to a signal output section (not shown) of the signal processing circuit 2 and is a signal input terminal for inputting a control signal for controlling the controller 19 from the signal processing circuit 2. The external terminal 5e is a terminal for maintaining the ground electrodes of the plurality of electronic components 50 at the ground potential. The external terminal 5e is electrically connected to the ground and is maintained at the ground potential. By electrically connecting the ground electrodes of each of the plurality of electronic components 50 to the external terminal 5e, the ground electrodes of each of the plurality of electronic components 50 are maintained at the ground potential.

[0021] Note that "A is connected to B" is not limited to the case where A directly contacts B, but also includes the case where A indirectly contacts B via a member having conductivity or magnetism. Further, "A is connected to B" includes "A is electrically connected to B". "A is electrically connected to B" means that A and B are connected so as to be electrically conductive.

[0022] Switch 6 selects at least one signal path among a plurality of signal paths (the first signal path L1 and the second signal path L2 in the example of FIG. 1), and connects the selected communication path to the antenna 3. Switch 6 operates according to a control signal from the controller 19. Switch 6 is, for example, a switch IC (Integrated Circuit). Switch 6 has a common terminal 6a and a plurality of selection terminals (a first selection terminal 6b and a second selection terminal 6c). The common terminal 6a can be selectively connected to at least one of the plurality of selection terminals (the first selection terminal 6b and the second selection terminal 6c). The common terminal 6a is connected to the external terminal 5a. The plurality of selection terminals are connected to the plurality of signal paths. In the example of FIG. 1, the first selection terminal 6b is connected to the first signal path L1. The second selection terminal 6c is connected to the second signal path L2.

[0023] The first signal path L1 is a communication path that connects the first selection terminal 6b and the external terminal 5b. In the first signal path L1, the output signal of the external terminal 5b is transmitted to the first selection terminal 6b. The second signal path L2 is a communication path that connects the second selection terminal 6c and the external terminal 5c. In the second signal path L2, the output signal of the second selection terminal 6c is transmitted to the external terminal 5c.

[0024] The transmission filter 7 has a transmission band (communication band) including the first communication band as a pass band. The transmission filter 7 is provided in the first signal path L1. That is, the transmission filter 7 is connected between the first selection terminal 6b of the switch 6 and the external terminal 5b.

[0025] The transmission filter 7 includes an input section 7a and an output section 7b. The input section 7a is connected to the output section 10b of the power amplifier 10 via the matching circuit 14. The output section 7b is connected to the first selection terminal 6b of the switch 6 via the matching circuit 13. The transmission filter 7 restricts the input signal (transmission signal) input to the input section 7a to a signal in the transmission band of the first communication band and passes it, and outputs the passed transmission signal from the output section 7b.

[0026] The receiving filter 8 has a passband that includes a second communication band (communication band). The second communication band may be a communication band that at least partially overlaps with the first communication hand, or may be a communication band that does not overlap with the first communication band at all. The receiving filter 8 is provided in the second signal path L2. That is, the receiving filter 8 is connected between the second selection terminal 6c of the switch 6 and the external terminal 5c.

[0027] The receiving filter 8 has an input section 8a and an output section 8b. The input section 8a is connected to the second selection terminal 6c of the switch 6 via the matching circuit 15. The output section 8b is connected to the input section 11a of the low-noise amplifier 11 via the matching circuit 16. The receiving filter 8 restricts the input signal (received signal) input to the input section 7a to a signal in the reception band of the second communication band and passes it, and outputs the passed received signal from the output section 8b.

[0028] The transmitting filter 7 and the receiving filter 8 are, for example, surface acoustic wave filters having a piezoelectric substrate. More specifically, the transmitting filter 7 and the receiving filter 8 are, for example, SAW (Surface Acoustic Wave) filters, BAW (Bulk Acoustic Wave) filters, or FBAR (Film Bulk Acoustic Resonator) filters.

[0029] The power amplifier 10 is provided between the input section 7a of the transmitting filter 7 and the external terminal 5b in the first signal path L1. The power amplifier 10 has an input section 10a and an output section 10b. The input section 10a is connected to the external terminal 5b. The output section 10b is connected to the input section 7a of the transmitting filter 7 via the matching circuit 14. The power amplifier 10 amplifies the transmission signal input to the input section 10a, and outputs the amplified transmission signal from the output section 10b to the input section 7a of the transmitting filter 7 via the matching circuit 14.

[0030] The low-noise amplifier 11 is provided between the output section 8b of the reception filter 8 and the external terminal 5c in the second signal path L2. The low-noise amplifier 11 has an input section 11a and an output section 11b. The input section 11a is connected to the output section 8b of the reception filter 8 via the matching circuit 16. The output section 11b is connected to the external terminal 5c. The low-noise amplifier 11 amplifies the reception signal input to the input section 11a and outputs the amplified reception signal from the output section 11b to the external terminal 5c.

[0031] The matching circuit 13 is provided between the first selection terminal 6b of the switch 6 and the transmission filter 7 in the first signal path L1. The matching circuit 13 is a circuit for impedance matching between the switch 6 and the transmission filter 7. The matching circuit 13 includes, for example, an inductor connected in series to the first signal path L1, or an inductor connected between the first signal path L1 and the ground.

[0032] The matching circuit 14 is provided between the transmission filter 7 and the power amplifier 10 in the first signal path L1. The matching circuit 14 is a circuit for impedance matching between the transmission filter 7 and the power amplifier 10. The matching circuit 14 includes, for example, an inductor connected in series to the first signal path L1, or an inductor connected between the first signal path L1 and the ground.

[0033] The matching circuit 15 is provided between the second selection terminal 6c of the switch 6 and the reception filter 8 in the second signal path L2. The matching circuit 15 is a circuit for impedance matching between the switch 6 and the reception filter 8. The matching circuit 15 includes, for example, an inductor connected in series to the second signal path L2, or an inductor connected between the second signal path L2 and the ground.

[0034] The matching circuit 16 is provided between the receiving filter 8 and the low-noise amplifier 11 in the second signal path L2. The matching circuit 16 is a circuit for impedance matching between the receiving filter 8 and the low-noise amplifier 11. The matching circuit 16 includes, for example, an inductor connected in series to the second signal path L2, or an inductor connected between the second signal path L2 and the ground.

[0035] The controller 19 controls the electronic components (such as the switch 6, the power amplifier 10, and the low-noise amplifier 11, etc.) included in the high-frequency module 1 according to the control signal from the signal processing circuit 2. The controller 19 is electrically connected to each of the above-mentioned electronic components. Further, the controller 19 is connected to the signal output section of the signal processing circuit 2 via the external terminal 5d. The controller 19 controls each of the above-mentioned electronic components according to the control signal input from the signal output section of the signal processing circuit 2 to the external terminal 5d.

[0036] (4) Operation The operation of the high-frequency module 1 will be described. When the high-frequency module 1 is transmitting, the common terminal 6a of the switch 6 is selectively connected to the first selection terminal 6b. Thereby, the transmission signal processed by the signal processing circuit 2 is input from the signal processing circuit 2 to the external terminal 5b. Then, the transmission signal input to the external terminal 5b passes through the power amplifier 10, the matching circuit 14, the transmitting filter 7, and the matching circuit 13 in sequence and is output to the first selection terminal 6b of the switch 6. At this time, the transmission signal is amplified by the power amplifier 10 and restricted to the signal of the first communication band by the transmitting filter 7. Then, the transmission signal is output from the first selection terminal 6b to the external terminal 5a via the common terminal 6a and is transmitted externally from the antenna 3.

[0037] When the high-frequency module 1 is receiving, the common terminal 6a of the switch 6 is selectively connected to the second selection terminal 6c. As a result, the received signal received by the antenna 3 flows from the common terminal 6a to the second selection terminal 6c. Then, the received signal passes through the matching circuit 15, the receiving filter 8, the matching circuit 16, and the low-noise amplifier 11 in sequence and is output to the external terminal 5c. At this time, the received signal is restricted to the signal of the second communication band by the receiving filter 8 and amplified by the low-noise amplifier 11. Then, the received signal is output from the external terminal 5c to the signal processing circuit 2.

[0038] (5) An example of the structure of the high-frequency module As shown in FIG. 2, in addition to the above-described plurality of electronic components 50 and external terminals 5a to 5e, the high-frequency module 1 further includes a mounting substrate 51, a plurality of pad electrodes 52, a resin member 53, an external shield layer 54, and a radio wave absorber 55.

[0039] The mounting substrate 51 is a substrate on which a plurality of electronic components 50 are arranged (mounted). The mounting substrate 51 is, for example, in a rectangular flat plate shape in a plan view from the thickness direction D1 of the mounting substrate 51. The mounting substrate 51 is, for example, a resin multilayer substrate. Note that the mounting substrate 51 is not limited to a resin multilayer substrate, and may be, for example, a printed wiring board, an LTCC (Low Temperature Co-fired Ceramics) substrate, or an HTCC (High Temperature Co-fired Ceramics) substrate.

[0040] The mounting substrate 51 has a first main surface 51a, a second main surface 51b, and an outer peripheral surface 51c. The first main surface 51a and the second main surface 51b are main surfaces that face each other in the thickness direction D1 of the mounting substrate 51. The outer peripheral surface 51c is a cylindrical surface that connects the outer peripheral edges of each of the first main surface 51a and the second main surface 51b. A plurality of pad electrodes 52 are provided on the first main surface 51a of the mounting substrate 51. The plurality of pad electrodes 52 are portions where external electrodes 50a (described later) of each of the plurality of electronic components 50 are connected, for example, by solder. A plurality of external terminals 5a to 5e of the high-frequency module 1 are provided on the second main surface 51b of the mounting substrate 51. In FIG. 2, as an example, only the external terminals 5a and 5e are illustrated.

[0041] More specifically, the mounting substrate 51 is, for example, a multilayer substrate including a plurality of dielectric layers (insulating layers) and a plurality of conductive layers. The plurality of dielectric layers and the plurality of conductive layers are alternately laminated in the thickness direction D1 of the mounting substrate 51. The plurality of conductive layers are formed in a predetermined pattern defined for each layer. The material of each conductive layer is, for example, copper. Each of the plurality of conductive layers is electrically connected to another conductive layer, the plurality of pad electrodes 52, or the plurality of external terminals 5a to 5e by via electrodes provided on the mounting substrate 51.

[0042] The plurality of conductive layers include a ground layer. The ground layer is electrically connected to the external terminal 5e. The external terminal 5e is a ground terminal that is electrically connected to the ground. By connecting the ground layer to the ground via the external terminal 5e, the potential of the ground layer is maintained at the ground potential. The ground layer is electrically connected to a pad electrode 52 that is electrically connected to a ground electrode 50g (described later) of each of the plurality of electronic components 50. The ground layer is electrically connected to an external shield layer 54 on the outer peripheral surface 51c of the mounting substrate 51.

[0043] The mounting substrate 51 is, for example, a substrate with a single-sided mounting structure in which a plurality of electronic components 50 are mounted on one side (e.g., the first main surface 51a) of the mounting substrate 51. The plurality of electronic components 50 are arranged (mounted) on the first main surface 51a of the mounting substrate 51. In the example of FIG. 2, as an example, only the first electronic component 50A, the second electronic component 50B, and the third electronic component 50C among the plurality of electronic components 50 are illustrated.

[0044] More specifically, each of the plurality of electronic components 50 has a plurality of external electrodes 50a. Each of the plurality of external electrodes 50a is connected to any one of the plurality of pad electrodes 52 provided on the first main surface 51a of the mounting substrate 51, for example, by solder. The plurality of external electrodes 50a includes a ground electrode 50g. The ground electrode 50g is connected to the pad electrode 52 electrically connected to the ground layer of the mounting substrate 51, for example, by solder.

[0045] The first electronic component 50A is, for example, any one of the electronic components 50 for transmission. The electronic component 50 for transmission is an electronic component used when transmitting a transmission signal among the plurality of electronic components 50, and is an electronic component connected to the first signal path L1 (transmission path). In Embodiment 1, the first electronic component 50A is, for example, any one of the transmission filter 7, the power amplifier 10, the matching circuit 13, and the matching circuit 14.

[0046] The second electronic component 50B is, for example, any one of the electronic components 50 for reception. The electronic component 50 for reception is an electronic component used when receiving a reception signal among the plurality of electronic components 50, and is an electronic component connected to the second signal path L2 (reception path). In Embodiment 1, the second electronic component 50B is, for example, any one of the reception filter 8, the low-noise amplifier 11, the matching circuit 15, and the matching circuit 16.

[0047] The third electronic component 50C is an electronic component 50 disposed between the first electronic component 50A and the second electronic component 50B in a plan view from the thickness direction D1 of the mounting substrate 51 on the first main surface 51a of the mounting substrate 51. Note that "C is disposed between A and B" as referred to in Embodiment 1 means that at least one of a plurality of line segments connecting an arbitrary point in the region of A and an arbitrary point in the region of B passes through the region of C in a plan view of the mounting substrate 51 viewed from the thickness direction D1. The third electronic component 50C is, for example, an elastic wave filter having a piezoelectric element (for example, a SAW filter, a BAW filter, or an FBAR filter) such as a transmission filter 7 or a reception filter 8.

[0048] The third electronic component 50C includes a plurality of external electrodes 50a and a component body 50b. Each of the plurality of external electrodes 50a is electrically connected to any one of a plurality of pad electrodes 52 of the mounting substrate 51. The plurality of external electrodes 50a are, for example, bump electrodes. The plurality of external electrodes 50a include a ground electrode 50g that is electrically connected to the ground layer of the mounting substrate 51. The plurality of external electrodes 50a are disposed on the lower surface (the main surface on the mounting substrate 51 side) of the component body 50b. The component body 50b is a portion of the third electronic component 50C other than the plurality of external electrodes 50a. The component body 50b includes a circuit portion that performs the function of the third electronic component 50C. The circuit portion is electrically connected to the plurality of external electrodes 50a. The component body 50b has, for example, a rectangular parallelepiped shape.

[0049] The third electronic component 50C has an outer surface 50r. The outer surface 50r is the outer surface (i.e., the outermost surface) of the component body 50b. The outer surface 50r has a top surface 50s and an outer peripheral surface 50t. The top surface 50s is the main surface of the third electronic component 50C (more specifically, the component body 50b) opposite to the mounting substrate 51. The outer peripheral surface 50t is the surface that constitutes the outer periphery of the third electronic component 50C. More specifically, the outer peripheral surface 50t is a cylindrical surface that extends from the outer peripheral edge of the top surface 50s of the third electronic component 50C (more specifically, the component body 50b) toward the mounting substrate 51 side. The outer peripheral surface 50t has a plurality (for example, four) of side surfaces. That is, the third electronic component 50C (more specifically, the component body 50b) is in a plate shape of a polygon (for example, a quadrilateral) in a plan view from the thickness direction of the third electronic component 50C (the thickness direction D1 of the mounting substrate 51).

[0050] The radio wave absorber 55 is provided on at least a part of the outer surface 50r of the third electronic component 50C. The radio wave absorber 55 is provided in a film shape (in other words, in a layer shape) on the outer surface 50r of the third electronic component 50C. The radio wave absorber 55 is disposed between the first electronic component 50A and the second electronic component 50B, and absorbs unnecessary waves that propagate from the first electronic component 50A, which is a transmitting electronic component 50, to the second electronic component 50B, which is a receiving electronic component 50. Thereby, the radio wave absorber 55 reduces interference caused by unnecessary waves between the first electronic component 50A and the second electronic component 50B.

[0051] The radio wave absorber 55 contains a magnetic resin or a magnetic film. The magnetic resin is a resin containing a magnetic material. The magnetic film is a film coated with the magnetic resin. When the radio wave absorber 55 is composed of the film, the radio wave absorber 55 is provided on the outer peripheral surface 50t of the third electronic component 50C by adhering the film to the outer surface 50r of the third electronic component 50C.

[0052] There are two types of materials for the above magnetic material, namely a magnetic type material and a dielectric type material. The magnetic type material is a magnetic filler such as ferrite. The dielectric type material is a material having the property of converting the absorbed radio waves into heat and releasing them, for example, a material in which carbon particles are mixed into rubber or the like.

[0053] More specifically, the radio wave absorber 55 is provided on at least one of the top surface 50s and the four side surfaces of the outer peripheral surface 50t of the third electronic component 50C. The four side surfaces include a first side surface 50u facing the first electronic component 50A and a second side surface 50v facing the second electronic component 50B. In Embodiment 1, the radio wave absorber 55 is provided, for example, on the entire top surface 50s and the entire outer peripheral surface 50t of the third electronic component 50C. For example, the radio wave absorber 55 is provided on the entire outer surface 50r of the third electronic component 50C.

[0054] The radio wave absorber 55 has a side surface portion 55t and a top surface portion 55s. The side surface portion 55t is a portion provided on the outer peripheral surface 50t of the third electronic component 50C in the radio wave absorber 55. The top surface portion 55s is a portion provided on the top surface 50s of the third electronic component 50C in the radio wave absorber 55.

[0055] The resin member 53 seals a plurality of electronic components 50 arranged on the first main surface 51a of the mounting substrate 51. The resin member 53 contains a resin (for example, an epoxy resin). The resin member 53 may contain a filler in addition to the resin. The resin member 53 is provided on the first main surface 51a of the mounting substrate 51. The resin member 53 covers the first main surface 51a of the mounting substrate 51. The resin member 53 covers a plurality of electronic components 50 arranged on the first main surface 51a of the mounting substrate 51. The resin member 53 covers the radio wave absorber 55 provided on the outer surface 50r of the third electronic component 50C.

[0056] The outer surface 53s of the resin member 53 has a top surface 53q and an outer peripheral surface 53r. The top surface 53q is the main surface on the side opposite to the mounting substrate 51 side in the resin member 53. The outer peripheral surface 53r is a surface extending in a cylindrical shape from the outer peripheral edge of the top surface 53q toward the mounting substrate 51 side.

[0057] The external shield layer 54 is a member for electromagnetically shielding the inside and outside of the high-frequency module 1. The external shield layer 54 is composed of a conductive member (for example, copper). The external shield layer 54 is composed of, for example, one metal layer, but is not limited thereto, and may have a multilayer structure in which a plurality of metal layers are laminated. The external shield layer 54 is provided at least on the outer surface 53s of the resin member 53 and covers the entire outer surface 53s of the resin member 53.

[0058] More specifically, the external shield layer 54 covers the entire outer surface 53s of the resin member 53 and at least a part of the outer peripheral surface 51c of the mounting substrate 51. By covering at least a part of the outer peripheral surface 51c of the mounting substrate 51, the external shield layer 54 is electrically connected to the ground layer of the mounting substrate 51 on the outer peripheral surface 51c of the mounting substrate 51. Thereby, the potential of the external shield layer 54 is maintained at the ground potential via the ground layer.

[0059] (6) Arrangement of a plurality of electronic components As shown in FIG. 2, the first main surface 51a of the mounting substrate 51 has a first region R1, a second region R2, and a third region R3.

[0060] In the first region R1, transmission electronic components 50 other than the transmission filter 7 among the plurality of electronic components 50 are gathered and arranged. In the example of FIG. 2, only the first electronic component 50A is shown in the first region R1 as an example of the transmission electronic components 50 other than the transmission filter 7.

[0061] The second region R2 is a region away from the first region R1. In the second region R2, reception electronic components 50 other than the reception filter 8 among the plurality of electronic components 50 are gathered and arranged. In the illustrated example of FIG. 2, only the second electronic component 50B is shown in the second region R2 as an example of the reception electronic components 50 other than the reception filter 8.

[0062] The third region R3 is the region between the first region R1 and the second region R2. The third region R3 is, for example, the central region of the first main surface 51a of the mounting substrate 51. In the third region R3, surface acoustic wave filters (for example, the transmission filter 7 and the reception filter 8) among the plurality of electronic components 50 are gathered and arranged. In the illustrated example of FIG. 3, only the third electronic component 50C, which is an example of a surface acoustic wave filter, is illustrated in the third region R3.

[0063] Thus, among the plurality of electronic components 50, the electronic components 50 for transmission other than the transmission filter 7 are gathered and arranged in the first region R1, and the electronic components 50 for reception other than the reception filter 8 are gathered and arranged in the second region R2. Then, surface acoustic wave filters such as the transmission filter 7 and the reception filter 8 are gathered and arranged in the third region R3 between the first region R1 and the second region R2.

[0064] In the first embodiment, by using such an arrangement of the plurality of electronic components 50, a radio wave absorbing material 55 is provided on the outer surface 50r of the third electronic component 50C arranged in the third region R3. Thus, by arranging the radio wave absorbing material 55 by using the outer surface 50r of the third electronic component 50C arranged in the third region R3, it is not necessary to secure an arrangement space for arranging the radio wave absorbing material 55 on the first main surface 51a of the mounting substrate 51. Therefore, even if the radio wave absorbing material 55 is arranged on the mounting substrate 51, the high-frequency module 1 can be miniaturized.

[0065] (7) Shielding characteristics by radio wave absorbing material As shown in FIG. 2, the radio wave absorbing material 55 is provided on at least a part of the outer surface 50r of the third electronic component 50C arranged between the first electronic component 50A and the second electronic component 50B. Thereby, unnecessary waves (radio waves) emitted from the first electronic component 50A toward the second electronic component 50B are easily absorbed by the radio wave absorbing material 55. Thereby, it is reduced that the unnecessary waves emitted from the first electronic component 50A toward the second electronic component 50B reach the second electronic component 50B. That is, the interference by unnecessary waves between the first electronic component 50A and the second electronic component 50B is reduced by the radio wave absorbing material 55.

[0066] (8) Effect The high-frequency module 1 according to Embodiment 1 includes a mounting substrate 51, a first electronic component 50A, a second electronic component 50B, a third electronic component 50C, and a radio wave absorbing material 55. The mounting substrate 51 has a first main surface 51a and a second main surface 51b that face each other. The first electronic component 50A is disposed on the first main surface 51a of the mounting substrate 51. The second electronic component 50B is disposed on the first main surface 51a of the mounting substrate 51. The third electronic component 50C is disposed between the first electronic component 50A and the second electronic component 50B in a plan view from the thickness direction D1 of the mounting substrate 51 on the first main surface 51a of the mounting substrate 51. The radio wave absorbing material 55 is provided on at least a part of the outer surface 50r of the third electronic component 50C. The radio wave absorbing material 55 contains a magnetic material.

[0067] According to this configuration, the unnecessary wave (radio wave) propagating between the first electronic component 50A and the second electronic component 50B can be absorbed by the radio wave absorbing material 55 provided on at least a part of the outer surface 50r of the third electronic component 50C. Thereby, the interference caused by the unnecessary wave between the first electronic component 50A and the second electronic component 50B can be reduced.

[0068] Further, the communication device 30 according to Embodiment 1 includes a high-frequency module 1 and a signal processing circuit 2. The signal processing circuit 2 is connected to the high-frequency module 1 and processes high-frequency signals. According to this configuration, a communication device having the above-described effect of the high-frequency module 1 can be provided.

[0069] (9) Modification A modification of Embodiment 1 will be described. The modifications described below can be implemented in combination.

[0070] (9.1) Modification 1 As shown in FIG. 3, in Modification 1, the radio wave absorber 55 is provided so as to straddle at least a part of the outer surface 50r of a plurality (two in the example of FIG. 3) of third electronic components 50C. More specifically, the high-frequency module 1 according to Modification 1 includes a plurality (two in the example of FIG. 3) of third electronic components 50C. The plurality of third electronic components 50C are arranged between the first electronic component 50A and the second electronic component 50B in a plan view from the thickness direction D1 of the mounting substrate 51 on the first main surface 51a of the mounting substrate 51, and are arranged adjacent to each other. The radio wave absorber 55 is provided so as to straddle the outer surface 50r of each of the plurality of third electronic components 50C. In the example of FIG. 2, the radio wave absorber 55 covers the top surface 50s and the side surface of the outer peripheral surface 50t that does not face the other third electronic component 50C in each third electronic component 50C. In the example of FIG. 2, the radio wave absorber 55 is not provided on the side surface of the outer peripheral surface 50t of each third electronic component 50C that faces the other third electronic component 50C.

[0071] In Modification 1, the radio wave absorber 55 is constituted by, for example, a magnetic film. Since the radio wave absorber 55 is constituted by a magnetic film, the radio wave absorber 55 can be easily provided so as to straddle a plurality of third electronic components 50C.

[0072] The high-frequency module 1 according to Modification 1 includes a plurality of third electronic components 50C. The plurality of third electronic components 50C are arranged between the first electronic component 50A and the second electronic component 50B in a plan view from the thickness direction D1 of the mounting substrate 51 on the first main surface 51a of the mounting substrate 51, and include the third electronic component 50C of Embodiment 1. The radio wave absorber 55 is provided so as to straddle at least a part of the outer surface 50r of each of the plurality of electronic components 50C. According to this configuration, compared with the case where the radio wave absorber 55 is provided on the outer surface 50r of one third electronic component 50C, the radio wave absorber 55 can be provided in a wider range without gaps. Thereby, unnecessary waves (radio waves) propagating between the first electronic component 50A and the second electronic component 50B can be absorbed even more.

[0073] (9.2) Modification 2 In Embodiment 1, the transmission electronic component 50, the reception electronic component 50, and the surface acoustic wave filters (transmission filter 7 and reception filter 8) are respectively arranged separately in the first region R1, the second region R2, and the third region R3 of the mounting substrate 51, but they may be arranged without separation. In this case, the electronic component 50 arranged between the two electronic components 50 (the first electronic component and the second electronic component) to be electromagnetically shielded is defined as the third electronic component 50C, and the radio wave absorbing material 55 is provided on at least a part of the outer peripheral surface of the third electronic component 50C. In this case, the third electronic component 50C is not limited to the surface acoustic wave filter, and may be an IC chip (IC component) including a switch, a low-noise amplifier, a power amplifier, etc., or a multilayer LC filter or the like which is an SMD (Surface Mount Device) component.

[0074] (9.3) Modification 3 In Embodiment 1, a single-sided mounting structure in which a plurality of electronic components 50 are arranged only on the first main surface 51a of the mounting substrate 51 is adopted. However, in Embodiment 1, a double-sided mounting structure in which a plurality of electronic components 50 are dispersedly arranged on both the first main surface 51a and the second main surface 51b of the mounting substrate 51 may be adopted.

[0075] (Embodiment 2) Referring to FIG. 4, the high-frequency module 1 according to Embodiment 2 will be described. In the following description, the same components as those in Embodiment 1 are denoted by the same reference numerals as in the case of Embodiment 1, and the description may be omitted, and only the parts different from Embodiment 1 may be described.

[0076] (1) Configuration As shown in FIG. 4, in the high-frequency module 1 according to Embodiment 2, it is configured in the same manner as in Embodiment 1, except that a recess 80 is provided on the first main surface 51a of the mounting substrate 51 in the high-frequency module 1 according to Embodiment 1.

[0077] The mounting substrate 51 of Embodiment 2 has a recess 80. The recess 80 houses the third electronic component 50C. More specifically, the recess 80 houses at least a part of the plurality of external electrodes 50a of the third electronic component 50C. In the example of FIG. 4, the recess 80 houses all of the plurality of external electrodes 50a of the third electronic component 50C. A plurality of pad electrodes (electrodes) 52 are provided on the bottom surface 80a of the recess 80. The plurality of pad electrodes 52 provided on the bottom surface 80a of the recess 80 are electrically connected to the plurality of external electrodes 50a of the third electronic component 50C housed and arranged in the recess 80, for example, by solder.

[0078] The size of the bottom surface 80a of the recess 80 is the same as or larger than (for example, slightly larger than) the planar size of the third electronic component 50C. The planar size of the third electronic component 50C is the size of the outer shape of the third electronic component 50C when viewed from the thickness direction D1 of the mounting substrate 51.

[0079] The depth d1 of the recess 80 is such that, in a state where the third electronic component 50C is housed and arranged in the recess 80, the lower surface 50d of the third electronic component 50C is at the same height as the first main surface 51a of the mounting substrate 51, or the depth at which the lower surface 50d is located closer to the second main surface 51b of the mounting substrate 51 than the first main surface 51a. The lower surface 50d of the third electronic component 50C is the main surface on the mounting substrate 51 side in the component body 50b of the third electronic component 50C.

[0080] Note that the depth d1 is not limited as described above, and in a state where the third electronic component 50C is housed and arranged in the recess 80, the depth may be such that the first main surface 51a of the mounting substrate 51 is located closer to the second main surface 51b of the mounting substrate 51 than the lower surface 50d of the third electronic component 50C.

[0081] In Embodiment 2, the third electronic component 50C is housed and arranged (mounted) in the recess 80 provided on the first main surface 51a of the mounting substrate 51. That is, the third electronic component 50C is arranged on the bottom surface 80a of the recess 80. The plurality of external electrodes 50a of the third electronic component 50C are connected to the plurality of pad electrodes 52 provided on the bottom surface 80a of the recess 80, for example, by solder.

[0082] In this arrangement state, the height of the lower surface 50d of the third electronic component 50C with respect to the first main surface 51a of the mounting substrate 51 is lower by the depth d1 of the recess 80 compared to the case where the third electronic component 50C is arranged on the first main surface 51a of the mounting substrate 51. In the first embodiment, the lower surface 50d is at the same height as the first main surface 51a or at a position lower than the first main surface 51a. Thereby, it is possible to reduce the passage of unnecessary waves K1 propagating between the first electronic component 50A and the second electronic component 50B through the gap S1 below the lower surface 50d of the third electronic component 50C (the gap formed by the height of the external electrodes 50a). As a result, the interference due to unnecessary waves between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0083] Further, since the third electronic component 50C is accommodated and arranged in the recess 80, the radio wave absorber 55 (i.e., the side surface portion 55t) provided on the outer peripheral surface 50t of the third electronic component 50C approaches the first main surface 51a of the mounting substrate 51. Thereby, it becomes easier to absorb the unnecessary wave K1 propagating on the surface layer of the first main surface 51a of the mounting substrate 51 by the side surface portion 55t of the radio wave absorber 55. Thereby, the interference due to unnecessary waves between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0084] (2) Effects In the high-frequency module 1 according to the second embodiment, the third electronic component 50C includes a plurality of external electrodes 50a. On the first main surface 51a of the mounting substrate 51, a recess 80 capable of accommodating at least a part of the plurality of external electrodes 50a of the third electronic component 50C is provided. On the bottom surface 80a of the recess 80, a plurality of pad electrodes 52 (electrodes) connected to the plurality of external electrodes 50a are provided. The third electronic component 50C is accommodated and arranged in the recess 80 of the mounting substrate 51 with the plurality of external electrodes 50a connected to the plurality of pad electrodes 52.

[0085] According to this configuration, as described above, the unnecessary wave K1 propagating between the first electronic component 50A and the second electronic component 50B can be reduced from passing through the gap S1 below the third electronic component 50C (i.e., the gap formed by the height of the external electrode 50a of the third electronic component 50C). Also, as described above, the radio wave absorber 55 (side surface portion 55t) provided on the outer peripheral surface 50t of the third electronic component 50C makes it easier to absorb the unnecessary wave K1 propagating through the surface layer of the first main surface 51a of the mounting substrate 51. As a result, the interference caused by the unnecessary wave between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0086] (Embodiment 3) Referring to FIG. 5, the high-frequency module 1 according to Embodiment 3 will be described. In the following description, the same components as those in Embodiment 1 are denoted by the same reference numerals as in Embodiment 1, and the description thereof may be omitted, and only the parts different from Embodiment 1 may be described.

[0087] (1) Configuration As shown in FIG. 5, the high-frequency module 1 according to Embodiment 3 is configured in the same manner except that the top surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55 are connected to the external shield layer 54.

[0088] In Embodiment 3, the radio wave absorber 55 is provided only on the outer peripheral surface 50t of the third electronic component 50C and is not provided on the top surface 50s of the third electronic component 50C. That is, the radio wave absorber 55 has only the side surface portion 55t provided on the outer peripheral surface 50t of the third electronic component 50C. The radio wave absorber 55 has an end portion 55a and an end portion 55b. The end portion 55a is the end portion of the radio wave absorber 55 (side surface portion 55t) on the side opposite to the mounting substrate 51. The end portion 55a is disposed on the outer peripheral edge (50n) of the top surface 50s of the third electronic component 50C. The end portion 55b is the end portion of the radio wave absorber 55 (side surface portion 55t) on the mounting substrate 51 side. The end portion 55b is disposed, for example, on the outer peripheral edge (50m) of the lower surface 50d (main surface on the mounting substrate 51 side) of the component body 50b of the third electronic component 50C. In Embodiment 3, as an example, the radio wave absorber 55 is provided on the entire outer peripheral surface 50t of the third electronic component 50C.

[0089] In Embodiment 3, the top surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55 are exposed from the resin member 53. That is, the resin member 53 covers the third electronic component 50C and the radio wave absorber 55 so as to expose the top surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55.

[0090] In Embodiment 3, the external shield layer 54 is provided on the outer surface 53s of the resin member 53 so as to cover the top surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55. Further, the external shield layer 54 is connected to the top surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55. In the example of FIG. 5, the external shield layer 54 is in direct contact with the top surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55. Thereby, no gap is formed between the top surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55 and the external shield layer 54. Further, by the above connection (contact), the third electronic component 50C and the radio wave absorber 55 are thermally conductively connected to the external shield layer 54.

[0091] (2) Effect The high-frequency module 1 according to Embodiment 3 includes a resin member 53 and an external shield layer 54. The resin member 53 is provided on the first main surface 51a of the mounting substrate 51 so as to cover the first electronic component 50A, the second electronic component 50B, the third electronic component 50C, and the radio wave absorber 55. The external shield layer 54 is provided on the outer surface 53s of the resin member 53. The radio wave absorber 55 has a side surface portion 55t. The side surface portion 55t is provided on the outer peripheral surface 50t of the outer surface 50r of the third electronic component 50C. The outer peripheral surface 50t of the third electronic component 50C constitutes the outer periphery of the third electronic component 50C. An end portion 55a of the side surface portion 55t of the radio wave absorber 55 on the side opposite to the mounting substrate 51 is disposed on the outer peripheral edge (50n) of the main surface (top surface) 50s of the third electronic component 50C on the side opposite to the mounting substrate 51. The resin member 53 exposes the main surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55. The external shield layer 54 covers the main surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55 and is connected to the main surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55.

[0092] According to this configuration, since the top surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55 are connected to the external shield layer 54, the gap between the top surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55 and the external shield layer 54 is blocked. Thereby, unnecessary waves propagating between the first electronic component 50A and the second electronic component 50B can be reduced from passing between the top surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55 and the external shield layer 54. Thereby, interference caused by unnecessary waves between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0093] Further, since the top surface 50s of the third electronic component 50C and the end portion 55a of the radio wave absorber 55 are connected to the external shield layer 54, heat generated in the third electronic component 50C can be easily radiated to the external shield layer 54 side. Therefore, the heat dissipation performance of the third electronic component 50C can be improved.

[0094] (3) Modification A modification of Embodiment 3 will be described. The modifications described below can be implemented in combination.

[0095] (3.1) Modification 1 (3.1.1) Configuration As shown in FIG. 6, in the high-frequency module 1 according to Modification 1, compared with the high-frequency module 1 according to Embodiment 3, a radio wave absorber 55 is disposed between the top surface 50s of the third electronic component 50C and the external shield layer 54, and it is otherwise configured in the same manner.

[0096] In Modification 1, the radio wave absorber 55 is provided on the top surface 50s and the outer peripheral surface 50t of the third electronic component 50C. That is, the radio wave absorber 55 has, in addition to the side surface portion 55t, a top surface portion 55s in the radio wave absorber 55 of Embodiment 3. The top surface portion 55s is a portion provided on the top surface 50s of the third electronic component 50C in the radio wave absorber 55. The top surface portion 55s is in contact with the side surface portion 55t at an end of the side surface portion 55t opposite to the mounting substrate 51. The top surface portion 55s is provided, for example, over the entire top surface 50s of the third electronic component 50C. In Modification 1, the side surface portion 55t and the top surface portion 55s are integrally formed of the same material.

[0097] In Modification 1, the resin member 53 exposes the top surface portion 55s of the radio wave absorber 55. The external shield layer 54 covers the top surface portion 55s of the radio wave absorber 55 and is connected to the top surface portion 55s. In the example of FIG. 6, the external shield layer 54 is in contact with the top surface portion 55s of the radio wave absorber 55. Thus, in Modification 1, the external shield layer 54 is indirectly connected to the top surface 50s of the third electronic component 50C via the top surface portion 55s of the radio wave absorber 55. Thus, even if the top surface portion 55s of the radio wave absorber 55 is interposed between the external shield layer 54 and the top surface 50s of the third electronic component 50C, the heat dissipation property of the third electronic component 50C does not deteriorate compared to the case where the top surface portion 55s of the radio wave absorber 55 is not interposed between the external shield layer 54 and the top surface 50s of the third electronic component 50C as in Embodiment 3. Also in Modification 1, as in Embodiment 3, the interference due to unnecessary waves between the first electronic component 50A and the second electronic component 50B can be further reduced by the top surface portion 55s.

[0098] (3.1.2) Effect In the high-frequency module 1 according to Modification 1, the radio wave absorber 55 further has a top surface portion 55s. The top surface portion 55s is provided on the main surface (top surface) 50s on the side opposite to the mounting substrate 51 in the third electronic component 50C. The external shield layer 54 covers the top surface portion 55s of the radio wave absorber 55 and is in contact with the top surface portion 55s of the radio wave absorber 55. According to this configuration, since the top surface portion 55s of the radio wave absorber 55 is disposed between the top surface 50s of the third electronic component 50C and the external shield layer 54, in addition to the effects of Embodiment 3, the interference due to unnecessary waves (radio waves) between the first electronic component 50A and the second electronic component 50B can be further reduced by the top surface portion 55s of the radio wave absorber 55.

[0099] (3.2) Modification 2 (3.2.1) Configuration As shown in FIG. 7, in the high-frequency module 1 according to Modification 2, it is configured in the same manner as the high-frequency module 1 according to Embodiment 3, except that the end portion 55b of the radio wave absorber 55 is in contact with the first main surface 51a of the mounting substrate 51.

[0100] In Modification 2, the end portion 55b of the side surface portion 55t of the radio wave absorber 55 is in contact with the first main surface 51a of the mounting substrate 51. That is, the side surface portion 55t protrudes from the lower surface 50d of the third electronic component 50C toward the mounting substrate 51 side, crosses the gap S2 between the lower surface 50d and the first main surface 51a of the mounting substrate 51, and is in contact with the first main surface 51a. Therefore, the outer periphery of the gap S2 is blocked by the side surface portion 55t. For this reason, it is possible to reduce the passing of unnecessary waves (radio waves) propagating between the first electronic component 50A and the second electronic component 50B through the gap S2. As a result, the interference caused by unnecessary waves between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0101] Note that the gap S2 between the lower surface 50d of the third electronic component 50C and the first main surface 51a of the mounting substrate 51 is a gap formed by a plurality of external electrodes 50a provided on the lower surface 50d of the third electronic component 50C. Since the gap S2 is surrounded by the radio wave absorber 55, it is a space not filled with the resin member 53. However, the gap S2 may be filled with the resin member 53.

[0102] In the example of FIG. 7, the radio wave absorber 55 is provided on the first side surface 50u and the second side surface 50v of the outer peripheral surface 50t of the third electronic component 50C. The first side surface 50u is a side surface of the outer peripheral surface 50t of the third electronic component 50C that faces the first electronic component 50A. The second side surface 50v is a side surface of the outer peripheral surface 50t of the third electronic component 50C that faces the second electronic component 50B. By providing the side surface portion 55t of the radio wave absorber 55 on the first side surface 50u and the second side surface 50v of the outer peripheral surface 50t, it is possible to effectively reduce the passing of unnecessary waves through the gap S2 by the side surface portion 55t.

[0103] Note that the side surface portion 55t of the radio wave absorber 55 is not limited to being provided on both the first side surface 50u and the second side surface 50v of the third electronic component 50C, and may be provided on at least one of the first side surface 50u and the second side surface 50v. In Modification 2, as an example, the radio wave absorber 55 is provided on the entire outer peripheral surface 50t of the third electronic component 50C.

[0104] (3.2.2) Effect In the high-frequency module 1 according to the second modification, the third electronic component 50C has a plurality of external electrodes 50a. The plurality of external electrodes 50a are connected to a plurality of pad electrodes 52 (electrodes) provided on the mounting substrate 51. An end portion 55b on the side of the mounting substrate 51 in the side surface portion 55t of the radio wave absorbing material 55 is in contact with the first main surface 51a of the mounting substrate 51.

[0105] According to this configuration, since the end portion 55b of the side surface portion 55t of the radio wave absorbing material 55 is in contact with the first main surface 51a of the mounting substrate 51, the outer periphery of the gap S2 between the lower surface 50d of the third electronic component 50C and the first main surface 51a of the mounting substrate 51 is blocked by the side surface portion 55t of the radio wave absorbing material 55. Thereby, it is possible to reduce the unnecessary wave propagating between the first electronic component 50A and the second electronic component 50B from passing through the gap S2. Thereby, the interference caused by the unnecessary wave between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0106] (3.3) Third modification As shown in FIG. 8, in the high-frequency module 1 according to the third modification, it is configured in the same manner as the high-frequency module 1 according to the third embodiment, except that the end portion 55a of the radio wave absorbing material 55 is not in contact with the external shield layer 54.

[0107] In the third modification, the top surface 50s of the third electronic component 50C is connected to the external shield layer 54 in the same manner as in the case of the third embodiment. The end portion 55a of the side surface portion 55t of the radio wave absorbing material 55 is not connected to the external shield layer 54. That is, the end portion 55a of the side surface portion 55t of the radio wave absorbing material 55 is not in contact with the external shield layer 54. More specifically, the end portion 55a of the side surface portion 55t of the radio wave absorbing material 55 is also disposed on the side of the mounting substrate 51 in the thickness direction of the mounting substrate 51 with respect to the top surface 50s of the third electronic component 50C.

[0108] According to Modification Example 3, since the top surface 50s of the third electronic component 50C is connected to the external shield layer 54, the gap between the top surface 50s of the third electronic component 50C and the external shield layer 54 is blocked. Thereby, it is possible to reduce the unnecessary wave (radio wave) propagating between the first electronic component 50A and the second electronic component 50B from passing between the top surface 50s of the third electronic component 50C and the external shield layer 54. Thereby, the interference caused by the unnecessary wave between the first electronic component 50A and the second electronic component 50B can be reduced.

[0109] Also, since the top surface 50s of the third electronic component 50C is connected to the external shield layer 54, the heat generated in the third electronic component 50C can be easily radiated to the external shield layer 54. Therefore, the heat dissipation performance of the third electronic component 50C can be improved.

[0110] (3.4) Modification Example 4 As shown in FIG. 9, in the high-frequency module 1 according to Modification Example 4, compared with the high-frequency module 1 according to Modification Example 2 of Embodiment 3, it is configured in the same manner except that the top surface 50s of the third electronic component 50C is not connected to the external shield layer 54.

[0111] In Modification Example 4, the top surface 50s of the third electronic component 50C is covered by the resin member 53 and is not connected to the external shield layer 54. The radio wave absorbing material 55 is provided on the outer peripheral surface 50t of the third electronic component 50C and is not provided on the top surface 50s of the third electronic component 50C. That is, the radio wave absorbing material 55 has only the side surface portion 55t. The side surface portion 55t is a portion provided on the outer peripheral surface 50t of the third electronic component 50C. The end portion 55a of the radio wave absorbing material 55 (that is, the side surface portion 55t) is connected to the external shield layer 54. More specifically, the end portion 55a of the radio wave absorbing material 55 protrudes from the top surface 50s of the third electronic component 50C, penetrates the resin member 53, and is connected to the external shield layer 54.

[0112] In Modification 4, the resin member 53 covers the first electronic component 50A, the second electronic component 50B, and the third electronic component 50C. With respect to the radio wave absorber 55, the resin member 53 exposes the end portion 55a and covers portions other than the end portion 55a. The external shield layer 54 covers the outer surface 53s of the resin member 53 and the end portion 55a of the radio wave absorber 55. By covering the end portion 55a of the radio wave absorber 55, the external shield layer 54 is connected to the end portion 55a.

[0113] In Modification 4, a gap S3 filled with the resin member 53 is formed between the top surface 50s of the third electronic component 50C and the external shield layer 54. The outer periphery of this gap S3 is surrounded by the radio wave absorber 55. Therefore, the radio wave absorber 55 can reduce the unnecessary waves propagating between the first electronic component 50A and the second electronic component 50B from passing through the gap S2. Thereby, the interference caused by unnecessary waves between the first electronic component 50A and the second electronic component 50B can be further reduced as compared with the case of Embodiment 1 (FIG. 2).

[0114] (Embodiment 4) Referring to FIG. 10, the high-frequency module 1 according to Embodiment 4 will be described. In the following description, the same components as those in Embodiment 1 are denoted by the same reference numerals as in the case of Embodiment 1, and the description thereof may be omitted, and only the portions different from Embodiment 1 may be described. In Embodiment 4, the radio wave absorber 55 in Embodiment 1 is described as the first radio wave absorber 55.

[0115] (1) Configuration As shown in FIG. 10, the high-frequency module 1 according to Embodiment 4 further includes a fourth electronic component 50D, a fifth electronic component 50E, a second radio wave absorber 60, and a third radio wave absorber 61 in the high-frequency module 1 according to Embodiment 1.

[0116] The third electronic component 50C of Embodiment 4 is disposed between the first electronic component 50A and the second electronic component 50B, similarly to the case of Embodiment 1. At least a part of the outer surface 50r of the third electronic component 50C is provided with a first electromagnetic wave absorber 55. More specifically, the outer surface 50r of the third electronic component 50C has a top surface 50s and an outer peripheral surface 50t. The outer peripheral surface 50t has a plurality (four in the example of FIG. 10) of side surfaces 50u, 50v, 50w, 50x. The side surface 50u is a side surface facing the first electronic component 50A side. The side surface 50v is a side surface facing the second electronic component 50B side. The side surface 50w is a side surface facing the fourth electronic component 50D side. The side surface 50x is a side surface opposite to the side surface 50w. The first electromagnetic wave absorber 55 is provided on the side surfaces 50u, 50v, 50w of the outer surface 50r of the third electronic component 50C.

[0117] The fourth electronic component 50D is disposed between the first electronic component 50A and the second electronic component 50B on the first main surface 51a of the mounting substrate 51 and is adjacent to the third electronic component 50C. Here, "A is adjacent to B" means that no other electronic component is disposed between A and B. More specifically, the fourth electronic component 50D is adjacent to the third electronic component 50C in an intersection direction (for example, an orthogonal direction) D3 that intersects the facing direction D2 between the first electronic component 50A and the second electronic component 50B in a plan view from the thickness direction of the mounting substrate 51 (the direction perpendicular to the paper surface of FIG. 10).

[0118] At least a part of the outer surface 50dr of the fourth electronic component 50D is provided with a second electromagnetic wave absorber 60. More specifically, the outer surface 50dr of the fourth electronic component 50D has a top surface 50ds and an outer peripheral surface 50dt. The outer peripheral surface 50dt has a plurality (four in the example of FIG. 10) of side surfaces 50du, 50dv, 50dw, 50dx. The side surface 50du is a side surface facing the first electronic component 50A side. The side surface 50dv is a side surface facing the second electronic component 50B side. The side surface 50dw is a side surface facing the third electronic component 50C side. The side surface 50dx is a side surface opposite to the side surface 50dw. The second electromagnetic wave absorber 60 is provided on the side surfaces 50du, 50dv, 50dw of the outer surface 50dr of the fourth electronic component 50D.

[0119] The fifth electronic component 50E is disposed between the first electronic component 50A and the second electronic component 50B on the first main surface 51a of the mounting substrate 51, and is adjacent to the third electronic component 50C and the fourth electronic component 50D in the facing direction D2 between the first electronic component 50A and the second electronic component 50B.

[0120] The fifth electronic component 50E is disposed so as to block the gap S4 between the first electronic component 50A and the second electronic component 50B in the facing direction D2. That is, the fifth electronic component 50E is disposed adjacent to the gap S4 in the facing direction D2. The fifth electronic component 50E has a first end portion 50f and a second end portion 50h in the intersecting direction D3. The first end portion 50f of the fifth electronic component 50E overlaps at least a part of the third electronic component 50C in the facing direction D2. The second end portion 50h of the fifth electronic component 50E overlaps at least a part of the fourth electronic component 50D in the facing direction D2.

[0121] At least a part of the outer surface 50er of the fifth electronic component 50E is provided with a third radio wave absorber 61. More specifically, the outer surface 50er of the fifth electronic component 50E has a top surface 50es and an outer peripheral surface 50et. The outer peripheral surface 50et has a side surface 50eu. The side surface 50eu is a side surface facing the first electronic component 50A side. The third radio wave absorber 61 is provided on the side surface 50eu of the outer surface 50er of the fifth electronic component 50E. Among the third radio wave absorber 61, the portion provided at the first end portion 50f of the side surface 50eu of the fifth electronic component 50E overlaps at least a part of the portion provided on the side surface 50v of the third electronic component 50C of the first radio wave absorber 55 in the facing direction D2. Among the third radio wave absorber 61, the portion provided at the second end portion 50h of the side surface 50eu of the fifth electronic component 50E overlaps at least a part of the portion provided on the side surface 50dv of the fourth electronic component 50D of the second radio wave absorber 60 in the facing direction D2.

[0122] In Embodiment 4, the resin member 53 is provided on the first main surface 51a of the mounting substrate 51 so as to cover a plurality of electronic components 50 (50A to 50E), similarly to the resin member 53 of Embodiment 1. The external shield layer 54 is provided on the outer surface of the resin member 53 and the outer peripheral surface of the mounting substrate 51, similarly to the external shield layer 54 of Embodiment 1. The external shield layer 54 has an outer peripheral portion 54t and a top surface portion (not shown). The outer peripheral portion 54t is provided on the outer peripheral surface 53r of the resin member 53 and the outer peripheral surface (not shown) of the mounting substrate 51 in the external shield layer 54. The top surface portion of the external shield layer 54 is a portion provided on the top surface (not shown) of the resin member 53 in the external shield layer 54.

[0123] In Embodiment 4, when viewed from the facing direction D2, the gap S4 between the third electronic component 50C and the fourth electronic component 50D is blocked by the fifth electronic component 50E. For this reason, unnecessary waves (radio waves) K2 radiated from the first electronic component 50A and passing through the gap S4 are reduced in their passage by the fifth electronic component 50E. As a result, interference of unnecessary waves between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0124] (2) Effect The high-frequency module 1 according to Embodiment 4 includes a fourth electronic component 50D, a second radio wave absorber 60, a fifth electronic component 50E, and a third radio wave absorber 61. The fourth electronic component 50D is disposed between the first electronic component 50A and the second electronic component 50B on the first main surface 51a of the mounting substrate 51, and is adjacent to the third electronic component 50C in an intersecting direction D3 that intersects the facing direction D2 between the first electronic component 50A and the second electronic component 50B. The second radio wave absorber 60 is provided on at least a part of the outer surface 50dr of the fourth electronic component 50D, and is a radio wave absorber different from the first radio wave absorber 55 which is the radio wave absorber 55. The fifth electronic component 50E is disposed between the first electronic component 50A and the second electronic component 50B on the first main surface 51a of the mounting substrate 51, and is adjacent to the third electronic component 50C and the fourth electronic component 50D in the facing direction D2. The third radio wave absorber 61 is provided on at least a part of the outer surface 50dr of the fifth electronic component 50E, and is a radio wave absorber different from the first radio wave absorber 55 and the second radio wave absorber 60. The fifth electronic component 50E is disposed so as to close the gap S4 between the first electronic component 50A and the second electronic component 50B in the facing direction D2. The fifth electronic component 50E has a first end portion 50f and a second end portion 50h in the intersecting direction D3. The first end portion 50f of the fifth electronic component 50E overlaps the third electronic component 50C in the facing direction D2. The second end portion 50h of the fifth electronic component 50E overlaps the fourth electronic component 50D in the facing direction D2.

[0125] According to this configuration, the fifth electronic component 50E can close the gap S4 between the third electronic component 50C and the fourth electronic component 50D when viewed from the facing direction D2. Thereby, the unnecessary wave K2 propagating between the first electronic component 50A and the second electronic component 50B can be reduced from passing through the gap S4 between the third electronic component 50C and the fourth electronic component 50D by the fifth electronic component 50E. Thereby, the interference caused by the unnecessary wave between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0126] (3) Modification A modification of Embodiment 4 will be described. The modifications described below can be implemented in combination.

[0127] (3.1) Modification Example 1 In Embodiment 4, in the facing direction D2, the distance between the fifth electronic component 50E and the third electronic component 50C may be eliminated, and the first end portion 50f of the side surface 50eu of the fifth electronic component 50E may be connected to the side surface 50v of the third electronic component 50C. Also, in the facing direction D2, the distance between the fifth electronic component 50E and the fourth electronic component 50D may be eliminated, and the second end portion 50h of the side surface 50eu of the fifth electronic component 50E may be connected to the side surface 50dv of the fourth electronic component 50D. Thereby, unnecessary waves K2 propagating between the first electronic component 50A and the second electronic component 50B can be further reduced from passing through the gap S4 between the third electronic component 50C and the fourth electronic component 50D by the fifth electronic component 50E.

[0128] (3.2) Modification Example 2 In Embodiment 4, the first radio wave absorber 55 may be provided over the entire top surface 50s and the entire outer peripheral surface 50t of the third electronic component 50C. Also, the second radio wave absorber 60 may be provided over the entire top surface 50ds and the entire outer peripheral surface 50dt of the fourth electronic component 50D. Also, the third radio wave absorber 61 may be provided over the entire top surface 50es and the entire outer peripheral surface 50et of the fifth electronic component 50E. Thereby, interference caused by unnecessary waves between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0129] (3.3) Modification Example 3 (3.3.1) Configuration As shown in FIG. 11, in Modification Example 3, in Embodiment 4, the side surface 50x of the third electronic component 50C is connected to the external shield layer 54. The side surface 50x is a side surface of the outer peripheral surface 50t of the third electronic component 50C that is adjacent to the external shield layer 54.

[0130] More specifically, as shown in FIG. 11, in Modification Example 3, the side surface 50x of the third electronic component 50C is arranged so as to overlap one side 51v of a plurality (four in the example of FIG. 11) of sides 51u of the first main surface 51a of the mounting substrate 51 in a plan view from the thickness direction of the mounting substrate 51 (the direction perpendicular to the paper surface of FIG. 11).

[0131] In Modification 3, the resin member 53 exposes the side surface 50x of the third electronic component 50C and covers the portions other than the side surface 50x in the resin member 53 of Embodiment 4. The external shield layer 54 covers the outer surface (top surface and outer peripheral surface 53r) of the resin member 53, the side surface 50x of the third electronic component 50C, and the outer peripheral surface of the mounting substrate 51 in the external shield layer 54 of Embodiment 4. The outer peripheral portion 54t of the external shield layer 54 is connected to the side surface 50x of the third electronic component 50C. That is, the side surface 50x of the third electronic component 50C is connected to the outer peripheral portion 54t of the external shield layer 54. In the example of FIG. 10, the side surface 50x of the third electronic component 50C is in direct contact with the outer peripheral portion 54t of the external shield layer 54. Thereby, the unnecessary wave K3 propagating between the first electronic component 50A and the second electronic component 50B can be reduced from passing between the side surface 50x of the third electronic component 50C and the outer peripheral portion 54t of the external shield layer 54. Thereby, the interference due to the unnecessary wave between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0132] (3.3.2) Effect The high-frequency module 1 according to Modification 3 includes a resin member 53 and an external shield layer 54. The resin member 53 is provided on the first main surface 51a of the mounting substrate 51 so as to cover the first electronic component 50A, the second electronic component 50B, the third electronic component 50C, the fourth electronic component 50D, the fifth electronic component 50E, the first radio wave absorber 55, the second radio wave absorber 60, and the third radio wave absorber 61. The external shield layer 54 is provided on the outer surface (top surface and outer peripheral surface 53r) of the resin member 53. The external shield layer 54 has an outer peripheral portion 54t provided on the outer peripheral surface 53r of the resin member 53. The third electronic component 50C has a plurality of side surfaces 50u, 50v, 50w, 50x. One side surface 50x adjacent to the outer peripheral portion 54t among the plurality of side surfaces 50u, 50v, 50w, 50x is exposed from the outer peripheral surface 53r of the resin member 53. One side surface 50x of the third electronic component 50C is connected to the outer peripheral portion 54t of the external shield layer 54.

[0133] According to this configuration, since one side surface 50x of the third electronic component 50C is connected to the outer peripheral portion 54t of the external shield layer 54, unnecessary waves K3 propagating between the first electronic component 50A and the second electronic component 50B can be reduced from passing between one side surface 50x of the third electronic component 50C and the outer peripheral portion 54t of the external shield layer 54. Thereby, interference caused by unnecessary waves between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0134] In addition, in Modification 3 of Embodiment 4, a case where the side surface 50x of the third electronic component 50C directly contacts the outer peripheral portion 54t of the external shield layer 54 is exemplified. However, when the first radio wave absorber 55 is provided on the side surface 50x of the third electronic component 50C, the side surface 50x is connected to the outer peripheral portion 54t of the external shield layer 54 via the first radio wave absorber 55 provided on the side surface 50x. In this case, the first radio wave absorber 55 provided on the side surface 50x can further reduce the unnecessary waves propagating between the first electronic component 50A and the second electronic component 50B from passing between one side surface 50x of the third electronic component 50C and the outer peripheral portion 54t of the external shield layer 54.

[0135] (Embodiment 5) With reference to FIG. 12, the high-frequency module 1 according to Embodiment 4 will be described. In the following description, the same components as those in Embodiment 1 are denoted by the same reference numerals as in Embodiment 1 and the description thereof may be omitted, and only the parts different from Embodiment 1 may be described. In Embodiment 5, the radio wave absorber 55 in Embodiment 1 is described as the first radio wave absorber 55.

[0136] (1) Configuration As shown in FIG. 12, the high-frequency module 1 according to Embodiment 5 is different from the high-frequency module 1 according to Embodiment 1 in that two or more of the plurality of side surfaces 50du, 50dv, 50dw, 50dx of the fourth electronic component 50D provided with the second radio wave absorber 70 are connected to the external shield layer 54. Hereinafter, Embodiment 5 will be described in detail.

[0137] The high-frequency module 1 according to Embodiment 5 further includes a fourth electronic component 50D, a fifth electronic component 50E, a second radio wave absorber 70, and a third radio wave absorber 71 in the high-frequency module 1 according to Embodiment 1.

[0138] The third electronic component 50C of Embodiment 5 is disposed between the first electronic component 50A and the second electronic component 50B as in the case of Embodiment 1. At least a part of the outer surface 50r of the third electronic component 50C is provided with a first radio wave absorber 55. The outer surface 50r of the third electronic component 50C has a top surface 50s and an outer peripheral surface 50t. In the example of FIG. 12, the first radio wave absorber 55 is provided on the outer peripheral surface 50t. The outer peripheral surface 50t of the third electronic component 50C has a plurality of side surfaces 50u, 50v, 50w, 50x. The side surface 50x is adjacent to the external shield layer 54 with a gap S5 therebetween. The side surface 50w is adjacent to the fifth electronic component 50E.

[0139] The fourth electronic component 50D is disposed on the first main surface 51a of the mounting substrate 51. At least a part of the outer surface 50dr of the fourth electronic component 50D is provided with a second radio wave absorber 70. The outer surface 50dr of the fourth electronic component 50D has a top surface 50ds and an outer peripheral surface 50dt. In the example of FIG. 12, the second radio wave absorber 70 is provided on the outer peripheral surface 50dt of the outer surface 50dr of the fourth electronic component 50D. The outer peripheral surface 50dt constitutes the outer periphery of the fourth electronic component 50D.

[0140] The outer peripheral surface 50dt of the fourth electronic component 50D has a plurality (four in the example of FIG. 12) of side surfaces 50du, 50dv, 50dw, 50dx. Two or more side surfaces (for example, adjacent side surfaces 50dv, 50dx) of the fourth electronic component 50D are arranged so as to overlap two or more sides (for example, two adjacent sides 51p, 51q) of the plurality of sides 51u of the first main surface 51a of the mounting substrate 51 in a plan view from the thickness direction of the mounting substrate 51. That is, the fourth electronic component 50D is arranged at a corner portion of the first main surface 51a of the mounting substrate 51. The second radio wave absorbing material 70 has a plurality (four in the example of FIG. 12) of side portions 70u, 70v, 70w, 70x. The plurality of side portions 70u, 70v, 70w, 70x are respectively provided on the plurality of side surfaces 50du, 50dv, 50dw, 50dx of the fourth electronic component 50D.

[0141] Two or more side surfaces 50dv, 50dx of the fourth electronic component 50D are connected to the outer peripheral portion 54t of the external shield layer 54 via two or more side portions 70v, 70x of the second radio wave absorbing material 70.

[0142] In the example of FIG. 12, as an example, the fourth electronic component 50D is adjacent to a gap S5 between the side surface 50x of the third electronic component 50C and the external shield layer 54 in the facing direction D2 of the first electronic component 50A and the second electronic component 50B. Further, as an example, the fourth electronic component 50D is adjacent to the second electronic component 50B in an intersecting direction D3 (for example, orthogonal) intersecting the facing direction D2.

[0143] The fifth electronic component 50E is arranged between the first electronic component 50A and the second electronic component 50B on the first main surface 51a of the mounting substrate 51 and is adjacent to the third electronic component 50C. More specifically, the fifth electronic component 50E is adjacent to the third electronic component 50C in the intersecting direction D3. At least a part of the outer surface 50er of the fifth electronic component 50E is provided with a third radio wave absorbing material 71. The outer surface 50er of the fifth electronic component 50E has a top surface 50es and an outer peripheral surface 50et. In the example of FIG. 12, the third radio wave absorbing material 71 is provided on the outer peripheral surface 50dt.

[0144] The resin member 53 of Embodiment 5 is provided on the first main surface 51a of the mounting substrate 51 so as to cover the plurality of electronic components 50 (50A to 50E) and the first to third radio wave absorbers 55, 70, 71. More specifically, with respect to the second radio wave absorber 70, the resin member 53 exposes the side surfaces 70v, 70x of the second radio wave absorber 70 and covers the remaining side surfaces 70u, 70w.

[0145] The external shield layer 54 of Embodiment 5 covers the outer surface (top surface and outer peripheral surface 53r) of the resin member 53, the side surfaces 70v, 70x of the second radio wave absorber 70, and the outer peripheral surface of the mounting substrate 51. The external shield layer 54 has a top surface portion and an outer peripheral portion 54t. The top surface portion of the external shield layer 54 is the portion provided on the top surface of the resin member 53 among the external shield layer 54. The outer peripheral portion 54t of the external shield layer 54 is the portion provided on the outer peripheral surface 53r of the resin member 53 and the outer peripheral surface of the mounting substrate 51 among the external shield layer 54. The outer peripheral portion 54t of the external shield layer 54 is connected to the side surfaces 70v, 70x of the second radio wave absorber 70. That is, the side surfaces 50v, 50x of the fourth electronic component 50D are respectively connected to the outer peripheral portion 54t of the external shield layer 54 via the side surfaces 70v, 70x of the second radio wave absorber 70.

[0146] In Embodiment 5, two or more side surfaces 50dv, 50dx of the fourth electronic component 50D are connected to the outer peripheral portion 54t of the external shield layer 54 via two or more side surfaces 70v, 70x of the second radio wave absorber 70. Thereby, the unnecessary wave (radio wave) K4 radiated from the first electronic component 50A and propagating along the outer peripheral portion 54t of the external shield layer 54 to the second electronic component 50B is suppressed in propagation by the fourth electronic component 50D and absorbed by the second radio wave absorber 70. As a result, interference due to unnecessary waves between the first electronic component 50A and the second electronic component 50B can be reduced.

[0147] Also, a third electronic component 50C and a fifth electronic component 50E are arranged between the first electronic component 50A and the second electronic component 50B. Therefore, the unwanted wave K5 propagating from the first electronic component 50A to the second electronic component 50B is suppressed in propagation by the third electronic component 50C and the fifth electronic component 50E and absorbed by the first radio wave absorber 55 and the third radio wave absorber 71. As a result, interference caused by the unwanted wave between the first electronic component 50A and the second electronic component 50B can be further reduced.

[0148] (2) Effect The high-frequency module 1 according to Embodiment 5 includes a fourth electronic component 50D, a second radio wave absorber 70, a resin member 53, and an external shield layer 54. The fourth electronic component 50D is arranged on the first main surface 51a of the mounting substrate 51. The second radio wave absorber 70 is provided on at least a part of the outer surface 50dr of the fourth electronic component 50D. The second radio wave absorber 70 is a radio wave absorber different from the first radio wave absorber 55. The resin member 53 covers the first electronic component 50A, the second electronic component 50B, the third electronic component 50C, the fourth electronic component 50D, the first radio wave absorber 55, and the second radio wave absorber 70. The external shield layer 54 is provided on the outer surface of the resin member 53. The external shield layer 54 has an outer peripheral portion 54t. The outer peripheral portion 54t is provided on the outer peripheral surface 53r that constitutes the outer periphery of the resin member 53 among the outer surfaces of the resin member 53. The fourth electronic component 50D has a plurality of side surfaces 50du, 50dv, 50dw, 50dx. Two or more of the plurality of side surfaces 50du, 50dv, 50dw, 50dx of the fourth electronic component 50D are connected to the outer peripheral portion 54t of the external shield layer 54.

[0149] According to this configuration, among the plurality of side surfaces 50du, 50dv, 50dw, 50dx of the fourth electronic component 50D, two or more side surfaces 50dv, 50dx are connected to the outer peripheral portion 54t of the external shield layer 54. For this reason, the propagation of the unnecessary wave K4 that propagates between the first electronic component 50A and the second electronic component 50B along the outer peripheral portion 54t of the external shield layer 54 can be reduced by the fourth electronic component 50D. Further, the unnecessary wave K4 can be absorbed by the second radio wave absorbing material 70. As a result, the interference caused by the unnecessary wave between the first electronic component 50A and the second electronic component 50B can be reduced.

[0150] (3) Modification A modification of Embodiment 5 will be described. In Embodiment 5, the side surface portions 70x, 70v of the second radio wave absorbing material 70 may be omitted, and the side surfaces 50dx, 50dv of the third electronic component 50C may be directly brought into contact with the outer peripheral portion 54t of the external shield layer 54.

[0151] (Aspect) The following aspects are disclosed in this specification.

[0152] The high-frequency module (1) of the first aspect includes a mounting substrate (51), a first electronic component (50A), a second electronic component (50B), a third electronic component (50C), and a radio wave absorbing material (55). The mounting substrate (51) has a first main surface (51a) and a second main surface (51b) facing each other. The first electronic component (50A) is disposed on the first main surface (51a) of the mounting substrate (51). The second electronic component (50B) is disposed on the first main surface (51a) of the mounting substrate (51). The third electronic component (50C) is disposed between the first electronic component (50A) and the second electronic component (50B) in a plan view from the thickness direction (D1) of the mounting substrate (51) on the first main surface (51a) of the mounting substrate (51). The radio wave absorbing material (55) is provided on at least a part of the outer surface (50r) of the third electronic component (50C). The radio wave absorbing material (55) contains a magnetic material.

[0153] According to this configuration, the radio wave absorber (55) provided on at least a part of the outer surface (50r) of the third electronic component (50C) can absorb unnecessary waves (radio waves) propagating between the first electronic component (50A) and the second electronic component (50B). Thereby, interference caused by unnecessary waves between the first electronic component (50A) and the second electronic component (50B) can be reduced.

[0154] The high-frequency module (1) of the second aspect further includes a plurality of third electronic components (50C) in the first aspect. The plurality of third electronic components (50C) are arranged between the first electronic component (50A) and the second electronic component (50B) in a plan view from the thickness direction (D1) of the mounting substrate (51) on the first main surface (51a) of the mounting substrate (51), and include the third electronic component (50C). The radio wave absorber (55) is provided across at least a part of the outer surface (50r) of each of the plurality of third electronic components (50C).

[0155] According to this configuration, the radio wave absorber (55) can be provided in a wider range without gaps as compared with the case where the radio wave absorber (55) is provided on the outer surface (50r) of one third electronic component (50C). Thereby, unnecessary waves (radio waves) propagating between the first electronic component (50A) and the second electronic component (50B) can be absorbed even more.

[0156] In the high-frequency module (1) of the third aspect, in the first or second aspect, the third electronic component (50C) includes a plurality of external electrodes (50a). A recess (80) capable of accommodating at least a part of the plurality of external electrodes (50a) of the third electronic component (50C) is provided on the first main surface (51a) of the mounting substrate (51). A plurality of electrodes (52) connected to the plurality of external electrodes (50a) are provided on the bottom surface (80a) of the recess (80). The third electronic component (50C) is accommodated and arranged in the recess (80) of the mounting substrate (51) in a state where the plurality of external electrodes (50a) are connected to the plurality of electrodes (52).

[0157] According to this configuration, it is possible to reduce the unnecessary wave (K1) propagating between the first electronic component (50A) and the second electronic component (50B) from passing through the gap (S1) below the third electronic component (50C) (i.e., the gap formed by the height of the external electrodes (50a) of the third electronic component (50C)). Further, the radio wave absorbing material (55) provided on the outer peripheral surface (50t) of the third electronic component (50C) makes it easier to absorb the unnecessary wave (K1) propagating through the surface layer of the first main surface (51a) of the mounting substrate (51). As a result, the interference caused by the unnecessary wave between the first electronic component (50A) and the second electronic component (50B) can be further reduced.

[0158] The high-frequency module (1) of the fourth aspect further includes a resin member (53) and an external shield layer (54) in any one of the first to third aspects. The resin member (53) is provided on the first main surface (51a) of the mounting substrate (51) so as to cover the first electronic component (50A), the second electronic component (50B), the third electronic component (50C), and the radio wave absorbing material (55). The external shield layer (54) is provided on the outer surface (53s) of the resin member (53). The radio wave absorbing material (55) has a side surface portion (55t). The side surface portion (55t) is provided on the outer peripheral surface (50t) that constitutes the outer periphery of the third electronic component (50C) among the outer surfaces (50r) of the third electronic component (50C). The end portion (55a) on the side opposite to the mounting substrate (51) in the side surface portion (55t) of the radio wave absorbing material (55) is disposed on the outer peripheral edge (50n) of the main surface (50s) on the side opposite to the mounting substrate (51) in the third electronic component (50C). The resin member (53) exposes the main surface (50s) of the third electronic component (50C) and the end portion (55a) of the radio wave absorbing material (55). The external shield layer (54) covers the main surface (50s) of the third electronic component (50C) and the end portion (55a) of the radio wave absorbing material (55) and is connected to the main surface (50s) of the third electronic component (50C) and the end portion (55a) of the radio wave absorbing material (55).

[0159] According to this configuration, since the top surface (50s) of the third electronic component (50C) (the main surface on the side opposite to the mounting substrate (51)) and the end portion (55a) of the radio wave absorbing material (55) are connected to the external shield layer (54), the gap between the top surface (50s) of the third electronic component (50C) and the end portion (55a) of the radio wave absorbing material (55) and the external shield layer (54) is blocked. Thereby, unnecessary waves propagating between the first electronic component (50A) and the second electronic component (50B) can be reduced from passing between the top surface (50s) of the third electronic component (50C), the end portion (55a) of the radio wave absorbing material (55), and the external shield layer (54). Thereby, interference caused by unnecessary waves between the first electronic component (50A) and the second electronic component (50B) can be further reduced.

[0160] Also, since the top surface (50s) of the third electronic component (50C) and the end portion (55a) of the radio wave absorbing material (55) are connected to the external shield layer (54), heat generated in the third electronic component (50C) can be easily radiated to the external shield layer (54) side. Therefore, the heat dissipation performance of the third electronic component (50C) can be improved.

[0161] In the high-frequency module (1) of the fifth aspect, in the fourth aspect, the radio wave absorbing material (55) further has a top surface portion (55s) provided on the main surface (50s) on the side opposite to the mounting substrate (51) in the third electronic component (50C). The external shield layer (54) covers the top surface portion (55s) of the radio wave absorbing material (55) and is in contact with the top surface portion (55s) of the radio wave absorbing material (55).

[0162] According to this configuration, since the top surface portion of the radio wave absorbing material (55) is disposed between the top surface (the main surface on the side opposite to the mounting substrate (51)) of the third electronic component (50C) and the external shield layer (54), interference caused by unnecessary waves between the first electronic component (50A) and the second electronic component (50B) can be further reduced by the top surface portion of the radio wave absorbing material (55).

[0163] In the high-frequency module (1) according to the sixth aspect, in the fourth or fifth aspect, the third electronic component (50C) has a plurality of external electrodes (50a). The plurality of external electrodes (50a) are connected to a plurality of electrodes (52) provided on the mounting substrate (51). An end portion (55b) on the side of the mounting substrate (51) in a side surface portion (55t) of the radio wave absorbing material (55) is in contact with a first main surface (51a) of the mounting substrate (51).

[0164] According to this configuration, since the end portion (55b) of the side surface portion (55t) of the radio wave absorbing material (55) is in contact with the first main surface (51a) of the mounting substrate (51), an outer periphery of a gap (S2) between a lower surface (50d) (a main surface on the side of the mounting substrate (51)) of the component body (50b) and the first main surface (51a) of the mounting substrate (51) is blocked by the side surface portion (55t) of the radio wave absorbing material (55). Thereby, unnecessary waves propagating between the first electronic component (50A) and the second electronic component (50B) can be reduced from passing through the gap (S2). Thereby, interference caused by unnecessary waves between the first electronic component (50A) and the second electronic component (50B) can be further reduced.

[0165] In the high-frequency module (1) according to the seventh aspect, in any one of the first to sixth aspects, the high-frequency module (1) further includes a fourth electronic component (50D), a second radio wave absorber (60), a fifth electronic component (50E), and a third radio wave absorber (61). The fourth electronic component (50D) is disposed between the first electronic component (50A) and the second electronic component (50B) on the first main surface (51a) of the mounting substrate (51), and is adjacent to the third electronic component (50C) in an intersecting direction (D3) intersecting the facing direction (D2) between the first electronic component (50A) and the second electronic component (50B). The second radio wave absorber (60) is provided on at least a part of the outer surface (50r) of the fourth electronic component (50D), and is a radio wave absorber different from the first radio wave absorber (55) which is the radio wave absorber (55). The fifth electronic component (50E) is disposed between the first electronic component (50A) and the second electronic component (50B) on the first main surface (51a) of the mounting substrate (51), and is adjacent to the third electronic component (50C) and the fourth electronic component (50D) in the facing direction (D2). The third radio wave absorber (61) is provided on at least a part of the outer surface (50r) of the fifth electronic component (50E), and is a radio wave absorber different from the first radio wave absorber (55) and the second radio wave absorber (60). The fifth electronic component (50E) is disposed so as to close the gap between the first electronic component (50A) and the second electronic component (50B) in the facing direction (D2). The fifth electronic component (50E) has a first end portion (50f) and a second end portion (50h) in the intersecting direction (D3). The first end portion (50f) of the fifth electronic component (50E) overlaps the third electronic component (50C) in the facing direction (D2). The second end portion (50h) of the fifth electronic component (50E) overlaps the fourth electronic component (50D) in the facing direction (D2).

[0166] According to this configuration, the fifth electronic component (50E) can block the gap (S4) between the third electronic component (50C) and the fourth electronic component (50D) when viewed from the facing direction (D2). Thereby, the unnecessary wave (K2) propagating between the first electronic component (50A) and the second electronic component (50B) can be reduced from passing through the gap (S4) between the third electronic component (50C) and the fourth electronic component (50D). Thereby, the interference caused by the unnecessary wave between the first electronic component (50A) and the second electronic component (50B) can be further reduced.

[0167] The high-frequency module (1) of the eighth aspect further includes a resin member (53) and an external shield layer (54) in the seventh aspect. The resin member (53) is provided on the first main surface (51a) of the mounting substrate (51) so as to cover the first electronic component (50A), the second electronic component (50B), the third electronic component (50C), the fourth electronic component (50D), the fifth electronic component (50E), the first radio wave absorber (55), the second radio wave absorber (60), and the third radio wave absorber (61). The external shield layer (54) is provided on the outer surface of the resin member (53). The external shield layer (54) has an outer peripheral portion (54t) provided on the outer peripheral surface (53r) of the resin member (53). The third electronic component (50C) has a plurality of side surfaces (50u, 50v, 50w, 50x). One side surface (50x) adjacent to the outer peripheral portion (54t) among the plurality of side surfaces (50u, 50v, 50w, 50x) is exposed from the outer peripheral surface (53r) of the resin member (53). One side surface (50x) of the third electronic component (50C) is connected to the outer peripheral portion (54t) of the external shield layer (54).

[0168] According to this configuration, since one side surface (50x) of the third electronic component (50C) is connected to the outer peripheral portion (54t) of the external shield layer (54), the unnecessary wave propagating between the first electronic component (50A) and the second electronic component (50B) can be reduced from passing through the gap between one side surface (50x) of the third electronic component (50C) and the outer peripheral portion (54t) of the external shield layer (54). Thereby, the interference caused by the unnecessary wave between the first electronic component (50A) and the second electronic component (50B) can be further reduced.

[0169] The high-frequency module (1) according to the ninth aspect further includes a fourth electronic component (50D), a second radio wave absorber (60), a resin member (53), and an external shield layer (54) in any one of the first to sixth aspects. The fourth electronic component (50D) is disposed on the first main surface (51a) of the mounting substrate (51). The second radio wave absorber (60) is provided on at least a part of the outer surface (50r) of the fourth electronic component (50D) and is a radio wave absorber different from the first radio wave absorber (55) which is the radio wave absorber (55). The resin member (53) covers the first electronic component, the second electronic component (50B), the third electronic component (50C), the fourth electronic component (50D), the first radio wave absorber (55), and the second radio wave absorber (60). The external shield layer (54) is provided on the outer surface of the resin member (53). The external shield layer (54) has an outer peripheral portion (54t). The outer peripheral portion (54t) is provided on the outer peripheral surface (50t) that constitutes the outer periphery of the resin member (53) of the outer surface of the resin member (53). The fourth electronic component (50D) has a plurality of side surfaces (50du, 50dv, 50dw, 50dx). Two or more of the plurality of side surfaces (50du, 50dv, 50dw, 50dx) of the fourth electronic component (50D) are connected to the outer peripheral portion (54t) of the external shield layer (54).

[0170] According to this configuration, two or more of the plurality of side surfaces (50du, 50dv, 50dw, 50dx) of the fourth electronic component (50D) are connected to the outer peripheral portion (54t) of the external shield layer (54). For this reason, the propagation of unnecessary waves (K4) propagating between the first electronic component (50A) and the second electronic component (50B) along the outer peripheral portion (54t) of the external shield layer (54) can be reduced by the fourth electronic component (50D). Also, the unnecessary waves (K4) can be absorbed by the second radio wave absorber (60). As a result, interference caused by unnecessary waves between the first electronic component (50A) and the second electronic component (50B) can be reduced.

[0171] The communication device (30) according to the tenth aspect includes any one of the high-frequency modules (1) according to the first to ninth aspects and a signal processing circuit (2). The signal processing circuit (2) is connected to the high-frequency module (1) and processes high-frequency signals.

[0172] According to this configuration, a communication device (30) having the above-described effects of the high-frequency module (1) can be provided.

Explanation of Reference Numerals

[0173] 1 High-frequency module 2 Signal processing circuit 2a RF signal processing circuit 2b Baseband signal processing circuit 3 Antenna 5a~5e External terminals 6 Switch 6a Common terminal 6b First selection terminal 6c Second selection terminal 7 Transmission filter 7a Input section 7b Output section 8 Reception filter 8a Input section 8b Output section 10 Power amplifier 10a Input section 10b Output section 11 Low-noise amplifier 11a Input section 11b Output section 13~16 Matching circuit 19 Controller 30 Communication device 50 Electronic component 50A First electronic component 50B Second electronic component 50C Third electronic component 50D Fourth electronic component 50E Fifth electronic component 50a External electrode 50b Component body 50d Main surface (lower surface) Outer surface of 50dr, 50er, 50r Top surface of 50ds, 50es, 50s Outer peripheral surface of 50dt, 50et, 50t Side surfaces of 50du~50dx Side surface of 50eu First end of 50f Ground electrode of 50g Second end of 50h First side surface of 50u Second side surface of 50v Side surfaces of 50u, 50v, 50w, 50x Mounting substrate of 51 First main surface of 51a Second main surface of 51b Outer peripheral surface of 51c Sides of 51p~51v Pad electrode (electrode) of 52 Resin member of 53 Top surface of 53q Outer peripheral surface of 53r Outer surface of 53s External shield layer of 54 Outer peripheral part of 54t Radio wave absorber of 55 First radio wave absorber of 55 Ends of 55a, 55b Top surface part of 55s Side surface part of 55t Second radio wave absorber of 60, 70 Third radio wave absorber of 61 Side surface parts of 70u, 70v, 70w, 70x Third radio wave absorber of 71 Recess of 80 Bottom surface of 80a Thickness direction of D1 Opposite direction of D2 Cross direction of D3 Unwanted waves of K1~K5 First signal path of L1 Second signal path of L2 First region of R1 Second region of R2 Third region of R3 Gaps of S1~S5

Claims

1. A mounting substrate having a first main surface and a second main surface facing each other, a first electronic component disposed on the first main surface of the mounting substrate, a second electronic component disposed on the first main surface of the mounting substrate, a third electronic component disposed between the first electronic component and the second electronic component in a plan view from the thickness direction of the mounting substrate on the first main surface of the mounting substrate, and a radio wave absorbing material provided on at least a part of the outer surface of the third electronic component, wherein the radio wave absorbing material contains a magnetic material, a high-frequency module.

2. On the first main surface of the mounting substrate, a plurality of third electronic components including the third electronic component are further provided, which are disposed between the first electronic component and the second electronic component in a plan view from the thickness direction of the mounting substrate, wherein the radio wave absorbing material is provided across at least a part of the outer surface of each of the plurality of third electronic components, The high-frequency module according to claim 1.

3. The third electronic component includes a plurality of external electrodes, a recess capable of accommodating at least a part of the plurality of external electrodes of the third electronic component is provided on the first main surface of the mounting substrate, a plurality of electrodes connected to the plurality of external electrodes are provided on the bottom surface of the recess, the third electronic component is disposed in the recess of the mounting substrate in a state where the plurality of external electrodes are connected to the plurality of electrodes, The high-frequency module according to claim 1 or 2.

4. a resin member provided on the first main surface of the mounting substrate so as to cover the first electronic component, the second electronic component, the third electronic component, and the radio wave absorbing material, and an external shield layer provided on the outer surface of the resin member, the radio wave absorbing material has a side surface portion provided on an outer peripheral surface constituting the outer periphery of the third electronic component among the outer surfaces of the third electronic component, an end portion of the side surface portion of the radio wave absorbing material on the side opposite to the mounting substrate is disposed on an outer peripheral edge of a main surface of the third electronic component on the side opposite to the mounting substrate, the resin member exposes the main surface of the third electronic component and the end portion of the radio wave absorbing material, the external shield layer covers the main surface of the third electronic component and the end portion of the radio wave absorbing material and is connected to the main surface of the third electronic component and the end portion of the radio wave absorbing material, The high-frequency module according to claim 1 or 2.

5. The radio wave absorbing material further has a top surface portion provided on the main surface of the third electronic component on the side opposite to the mounting substrate. The external shield layer covers the top surface portion of the radio wave absorbing material and is in contact with the top surface portion of the radio wave absorbing material. The high-frequency module according to claim 4.

6. The third electronic component has a plurality of external electrodes connected to a plurality of electrodes provided on the mounting substrate. An end portion on the mounting substrate side of the side surface portion of the radio wave absorbing material is in contact with the first main surface of the mounting substrate. The high-frequency module according to claim 4.

7. A fourth electronic component disposed between the first electronic component and the second electronic component on the first main surface of the mounting substrate and adjacent to the third electronic component in an intersecting direction intersecting the facing direction of the first electronic component and the second electronic component; A second radio wave absorbing material provided on at least a part of the outer surface of the fourth electronic component and different from the first radio wave absorbing material which is the radio wave absorbing material; A fifth electronic component disposed between the first electronic component and the second electronic component on the first main surface of the mounting substrate and adjacent to the third electronic component and the fourth electronic component in the facing direction; A third radio wave absorbing material provided on at least a part of the outer surface of the fifth electronic component and different from the first radio wave absorbing material and the second radio wave absorbing material, further comprising: The fifth electronic component is disposed so as to block a gap between the first electronic component and the second electronic component in the facing direction. The fifth electronic component has a first end portion and a second end portion in the intersecting direction. The first end portion of the fifth electronic component overlaps the third electronic component in the facing direction, and the second end portion of the fifth electronic component overlaps the fourth electronic component in the facing direction. The high-frequency module according to claim 1 or 2.

8. A resin member provided on the first main surface of the mounting substrate so as to cover the first electronic component, the second electronic component, the third electronic component, the fourth electronic component, the fifth electronic component, the first radio wave absorbing material, the second radio wave absorbing material, and the third radio wave absorbing material; An external shield layer provided on the outer surface of the resin member, further comprising: The external shield layer has an outer peripheral portion provided on the outer peripheral surface of the resin member. The third electronic component has a plurality of side surfaces, and one side surface adjacent to the outer peripheral portion among the plurality of side surfaces is exposed from the outer peripheral surface of the resin member. One side surface of the third electronic component is connected to the outer peripheral portion of the external shield layer. The high-frequency module according to claim 7.

9. A fourth electronic component disposed on the first main surface of the mounting substrate; A second radio wave absorber provided on at least a part of the outer surface of the fourth electronic component and different from the first radio wave absorber which is the radio wave absorber; A resin member covering the first electronic component, the second electronic component, the third electronic component, the fourth electronic component, the first radio wave absorber, and the second radio wave absorber; An external shield layer provided on the outer surface of the resin member, and further comprising: The external shield layer has an outer peripheral portion provided on an outer peripheral surface constituting the outer periphery of the resin member of the outer surface of the resin member; The fourth electronic component has a plurality of side surfaces; Two or more of the plurality of side surfaces of the fourth electronic component are connected to the outer peripheral portion of the external shield layer. The high-frequency module according to claim 1 or 2.

10. The high-frequency module according to claim 1 or 2; A signal processing circuit connected to the high-frequency module and processing a high-frequency signal, and comprising: A communication device.

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