Fitting structure and semiconductor component

Abstract

To provide a fitting structure and a semiconductor component having a structure capable of suppressing creep-up of a bonding material.SOLUTION: A fitting structure according to the present disclosure includes a carrier having a first surface having a first wettability with respect to a bonding material, and a conductor layer provided on the first surface and having a second wettability with respect to the bonding material higher than the first wettability, and the conductor layer includes a first region having at least four sides, and two or more second regions spaced apart from each other along a first side of the at least four sides.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a mounting structure and a semiconductor component, and particularly to a mounting structure and a semiconductor component for mounting an optical semiconductor element.

Background Art

[0002] The development of optical semiconductor elements such as semiconductor optical amplifiers (SOAs) is progressing, and their applications are expanding not only to light-emitting components but also to in-vehicle devices and the like. Since optical semiconductor elements generate heat during light emission, high heat dissipation performance is required.

[0003] Patent Document 1 discloses a heat-generating component mounting body having good heat dissipation performance. The heat-generating component mounting body disclosed in Patent Document 1 includes a heat-generating component having electrodes, a heat dissipation member, a substrate (carrier) having a conductor provided to face the electrodes, a bonding material (solder) that bonds the electrodes and the conductor, and a bonding material restricting portion around the bonding material.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] On the other hand, in a semiconductor component in which an optical semiconductor element is mounted on a carrier via a bonding material such as solder, for example, due to heat generation from the optical semiconductor element, the bonding material applied on the carrier may creep up the side surface of the optical semiconductor element. Also, for example, when mounting the optical semiconductor element on the carrier, the bonding material may creep up the side surface of the optical semiconductor element. When such creeping occurs, a short circuit may occur between the carrier and the optical semiconductor element, raising concerns about a deterioration in the quality of the semiconductor component.

[0006] The present disclosure has been made in view of these, and an object thereof is to provide an attachment structure and a semiconductor component having a structure capable of suppressing the creeping of a bonding material.

Means for Solving the Problems

[0007] The attachment structure according to the present disclosure includes a carrier having a first surface having a first wettability with respect to a bonding material, and a conductor layer provided on the first surface and having a second wettability higher than the first wettability with respect to the bonding material. The conductor layer includes a first region having at least four sides, and two or more second regions provided spaced apart from each other along a first side among the at least four sides.

[0008] The semiconductor component according to the present disclosure includes a carrier having a first surface having a first wettability with respect to a bonding material, a conductor layer provided on the first surface and having a second wettability higher than the first wettability with respect to the bonding material, and a semiconductor element provided on the conductor layer via the bonding material. The conductor layer includes a first region having at least four sides, and two or more second regions provided spaced apart from each other along a first side among the at least four sides. The semiconductor element is mounted on the first region in contact with a second side and a third side adjacent to the first side.

Effects of the Invention

[0009] According to the present disclosure, it is possible to provide an attachment structure and a semiconductor component having a structure capable of suppressing the creeping of a bonding material.

Brief Description of the Drawings

[0010]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Embodiment for Carrying Out the Invention

[0011] Hereinafter, a configuration example of the mounting structure 10 and the semiconductor component 100 according to the present disclosure will be described with reference to the drawings. The mounting structure 10 shown in FIG. 1 includes a carrier 11 and a conductor layer 12 provided on the first surface of the carrier 11.

[0012] The carrier 11 is a substrate for mounting a semiconductor element, and is preferably made of a material having excellent heat dissipation properties. Examples of the material constituting the carrier 11 include aluminum nitride, silicon carbide, and silicon. The first surface of the carrier 11 has a first wettability with respect to the bonding material 20 described later.

[0013] The conductor layer 12 provided on the carrier 11 functions as an electrode for electrically connecting to a semiconductor element. The conductor layer 12 preferably contains a material having high conductivity such as a metal. Examples of the material having high conductivity include Au, Pt, Ag, Cu, Fe, Al, Ti, W, Ni, or an alloy containing a plurality of these. The surface of the conductor layer 12 has a second wettability higher than the first wettability with respect to the bonding material 20 described later. Therefore, the bonding material 20 spreads well on the conductor layer 12, but does not spread easily on the first surface of the carrier 11. Thus, the first surface of the carrier 11 functions as a diffusion prevention layer for the bonding material 20.

[0014] The conductor layer 12 has a first region 121 which is a region for providing the bonding material 20, and two or more second regions 122 provided at intervals along a predetermined side of the first region 121. Also, between the two or more second regions 122, there is a third region 123 where the surface of the carrier 11 is exposed. Details of these regions will be described later.

[0015] Figure 2 shows the state where the bonding material 20 is provided in the mounting structure 10. It is preferable to use solder containing a plurality of metal materials for the bonding material 20. As an example of the solder constituting the bonding material 20, it is preferably an alloy of Sn (tin) and at least one or more metal materials selected from the group consisting of Au, Ag, Cu, Zn, In, Ga, Bi, Fe, Ti, Al, Sb, and Ni. Furthermore, it is more preferable that the bonding material 20 is lead-free solder.

[0016] Also, the solder constituting the bonding material 20 preferably contains the metal contained in the conductor layer 12. By selecting such a material, the conductor layer 12 can have high wettability with respect to the bonding material 20. For example, when using a conductor layer 12 containing Au and a bonding material 20 which is AuSn solder, since the conductor layer 12 has high wettability with respect to the bonding material 20, the bonding material 20 easily spreads on the conductor layer 12, which is preferable.

[0017] Figure 3(a) is a top view of the conductor layer 12. The region surrounded by the dashed line in Figure 3(a) shows the above-described first region 121. The shape of the first region 121 is not particularly limited, but it is preferably a polygon or a rounded polygon having at least four sides. The first region 121 shown in Figure 3(a) has a first side 221, a second side 222 and a third side 223 adjacent to the first side 221, and a fourth side 224 facing the first side 221.

[0018] It is preferable that two or more second regions 122 are provided along the first side 221 of the first region 121 so as to be separated from each other. There is a third region 123 where the first surface of the carrier 11 is exposed between the two second regions 122A and 122B shown in Figure 3(a). The third region 123 may be used as a mounting marker in the process of mounting the semiconductor element on the bonding material 20.

[0019] Further, the shapes of the second region 122 and the third region 123 are not limited to the rectangular shape shown in FIG. 3(a). Examples of the shapes of the second region 122 and the third region 123 are shown in FIGS. 3(b) to (d). The shape of the second region 122 is preferably determined such that the shape of the third region 123 is any one of a circular shape, an elliptical shape, a triangular shape, a trapezoidal shape, and a polygonal shape with five or more sides. In particular, when the third region 123 is used as a mounting marker, it is preferable to use any one of a triangular shape, a trapezoidal shape, and a polygonal shape with five or more sides because alignment adjustment during mounting becomes easy.

[0020] Also, as will be described later, the second region 122 is a region into which the excess bonding material 20 flows. Therefore, as shown in FIGS. 3(c) and (d), in the shape of the second region 122, it is preferable that the longest side is in contact with the first side 221. By doing so, while maintaining the visibility of the mounting marker, the bonding material 20 can be made to flow into the second region 122 more easily.

[0021] FIG. 4(a) shows a configuration example of the semiconductor component 100 according to the present disclosure. The semiconductor component 100 includes a semiconductor element 30 provided on the conductor layer 12 via a bonding material 20. The semiconductor element 30 is preferably mounted so as to be in contact with the second side 222 and the third side 223 of the first region 121 of the conductor layer 12. By doing so, the bonding material 20 is less likely to spread to the second side 222 and the third side 223 sides, and is more likely to spread to the first side 221 and the fourth side 224 sides.

[0022] As the semiconductor element 30, a semiconductor optical amplifier (SOA), a light emitting diode (LED) element, a laser diode (LD) element, or the like is used.

[0023] FIG. 4(b) shows a state in which the bonding material 20 has spread until it overlaps a part of the second region 122 beyond the first side 221 of the first region 121. Thus, by providing a region where the bonding material 20 wets and spreads, it is possible to suppress the bonding material 20 from creeping up the side surface of the semiconductor element 30. Although not shown, the bonding material 20 may similarly spread until it overlaps a part of the second region 122 also on the fourth side 224 side.

[0024] Further, the third region 123 where the first surface of the carrier 11 is exposed has a characteristic that the wettability with respect to the bonding material 20 is lower than that of the conductor layer 12, so that the bonding material 20 hardly flows into the third region 123. Therefore, even when the third region 123 is used as a mounting marker for the semiconductor element 30, the bonding material 20 does not flow onto the mounting marker, so that the visibility of the mounting marker can be maintained.

[0025] Here, the creeping of the bonding material 20 will be described with reference to FIG. 5. FIG. 5(a) shows a configuration example of the semiconductor component 200 when the semiconductor element 30 is provided via the bonding material 20 on the conductor layer 120 not provided with the second region 122. FIG. 5(b) is a cross-sectional view taken along the broken line II-II in FIG. 5(a). Due to the heat generation of the semiconductor element 30 and the variation in the thickness of the bonding material 20, etc., a region 21 where the bonding material 20 creeps up to the side surface of the semiconductor element 30 occurs. When such a creeping region 21 occurs, a short circuit may occur between the carrier 11 and the semiconductor element 30, which is not preferable.

[0026] On the other hand, since the mounting structure 10 and the semiconductor component 100 according to the present disclosure are provided with the second region 122, the excess bonding material 20 can flow into the second region 122, and the bonding material 20 can be suppressed from creeping up to the semiconductor element 30.

[0027] As described above, the present disclosure has been described with reference to the embodiments, but the present disclosure is not limited to the above-described embodiments. Various changes that can be understood by those skilled in the art can be made to the configuration and details of the present disclosure within the scope of the present disclosure.

[0028] Each drawing is merely an illustration for explaining one or more embodiments. Each drawing may be associated with not only one specific embodiment but also one or more other embodiments. As can be understood by those skilled in the art, various features or steps described with reference to any one drawing can be combined with the features or steps shown in one or more other drawings, for example, to create embodiments that are not explicitly illustrated or described. Not all of the features or steps shown in any one drawing for explaining exemplary embodiments are necessarily essential, and some features or steps may be omitted. The order of the steps described in any drawing may be changed as appropriate.

[0029] Some or all of the above embodiments may be described as follows, but are not limited thereto. (Appendix 1) A carrier having a first surface with a first wettability with respect to a bonding material, A conductor layer provided on the first surface and having a second wettability higher than the first wettability with respect to the bonding material, The conductor layer includes a first region having at least four sides and two or more second regions spaced apart from each other along a first side among the at least four sides, An attachment structure. (Appendix 2) The shape of the two or more second regions is determined such that the region where the carrier is exposed between the two or more second regions is any one of a circular shape, an elliptical shape, a triangular shape, a trapezoidal shape, and a polygonal shape with five or more sides, The attachment structure according to Appendix 1. (Appendix 3) The region where the first surface of the carrier is exposed functions as a marker for mounting a semiconductor element, The attachment structure according to Appendix 2. (Appendix 4) The first region is a polygonal shape or a rounded polygonal shape including the first side, a second side and a third side adjacent to the first side, and a fourth side opposite to the first side, The mounting structure according to any one of Supplementary Notes 1 to 3. (Supplementary Note 5) A carrier having a first surface with a first wettability with respect to a bonding material, A conductor layer provided on the first surface and having a second wettability higher than the first wettability with respect to the bonding material, A semiconductor element provided on the conductor layer via the bonding material, and the conductor layer includes a first region having at least four sides and two or more second regions provided spaced apart from each other along a first side among the at least four sides, the semiconductor element is mounted on the first region in contact with a second side and a third side adjacent to the first side, A semiconductor component. (Supplementary Note 6) The shape of the two or more second regions is determined such that a region where the carrier is exposed between the two or more second regions is any one of a circular shape, an elliptical shape, a triangular shape, a trapezoidal shape, and a polygonal shape with five or more sides. The semiconductor component according to Supplementary Note 5. (Supplementary Note 7) The region where the first surface of the carrier is exposed functions as a mounting marker for the semiconductor element. The semiconductor component according to Supplementary Note 6. (Supplementary Note 8) The first region is a polygonal shape or a rounded polygonal shape including the first side, the second side, the third side, and a fourth side facing the first side. The semiconductor component according to any one of Supplementary Notes 5 to 7. (Supplementary Note 9) The bonding material is a solder layer containing a metal material contained in the conductor layer. The semiconductor component according to any one of Supplementary Notes 5 to 7. (Supplementary Note 10) The bonding material has a region overlapping a part of the two or more second regions. The semiconductor component according to any one of Supplementary Notes 5 to 7.

[0030] Some or all of the elements (e.g., configurations and functions) described in Appendices 2 to 4 that are subordinate to the mounting structure described in Appendix 1 may also be subordinate to the semiconductor component described in Appendix 5 in a similar subordinate relationship. Some or all of the elements described in any appendix may be applied to various hardware, software, recording means for recording software, systems, and methods.

Explanation of Signs

[0031] 10 Mounting structure 11 Carrier 12, 120 Conductor layer 20 Bonding material 21 Region 30 Semiconductor element 100, 200 Semiconductor component 121 First region 122 Second region 123 Third region 221 First side 222 Second side 223 Third side 224 Fourth side

Claims

1. A carrier having a first surface with a first wettability with respect to a bonding material, and a conductor layer provided on the first surface and having a second wettability higher than the first wettability with respect to the bonding material, wherein the conductor layer includes a first region having at least four sides and two or more second regions provided apart from each other along a first side among the at least four sides, Attachment structure.

2. The shape of the two or more second regions is determined such that a region where the carrier is exposed between the two or more second regions is any one of a circular shape, an elliptical shape, a triangular shape, a trapezoidal shape, and a polygonal shape with five or more sides, The attachment structure according to claim 1.

3. The region where the first surface of the carrier is exposed functions as a mounting marker for a semiconductor element, The attachment structure according to claim 2.

4. The first region is a polygonal shape or a rounded polygonal shape including the first side, a second side and a third side adjacent to the first side, and a fourth side facing the first side, The attachment structure according to any one of claims 1 to 3.

5. A carrier having a first surface with a first wettability with respect to a bonding material, a conductor layer provided on the first surface and having a second wettability higher than the first wettability with respect to the bonding material, and a semiconductor element provided on the conductor layer via the bonding material, wherein the conductor layer includes a first region having at least four sides and two or more second regions provided apart from each other along a first side among the at least four sides, and the semiconductor element is mounted on the first region in contact with a second side and a third side adjacent to the first side, Semiconductor component.

6. The shape of the two or more second regions is determined such that a region where the carrier is exposed between the two or more second regions is any one of a circular shape, an elliptical shape, a triangular shape, a trapezoidal shape, and a polygonal shape with five or more sides, The semiconductor component according to claim 5.

7. The region where the first surface of the carrier is exposed functions as a mounting marker for the semiconductor element, The semiconductor component according to claim 6.

8. The first region is a polygonal shape or a rounded polygonal shape including the first side, the second side, the third side, and a fourth side facing the first side, The semiconductor component according to any one of claims 5 to 7.

9. The bonding material is a solder layer containing a metal material contained in the conductor layer, The semiconductor component according to any one of claims 5 to 7.

10. The bonding material has a region that overlaps with a part of the two or more second regions. The semiconductor component according to any one of claims 5 to 7.

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