Semiconductor light-emitting device

Abstract

To provide a semiconductor light-emitting device with which it is possible to facilitate wiring design and respond to increase in the number of semiconductor light-emitting elements mountable to the semiconductor light-emitting device.SOLUTION: A semiconductor light-emitting device 10 includes a semiconductor light-emitting element 30A, and a drive circuit 40A for driving the semiconductor light-emitting element 30A. The drive circuit 40 includes a switching element 411 for controlling the semiconductor light-emitting element 30A, and a capacitor 421 for supplying a current to the semiconductor light-emitting element 30A. The semiconductor light-emitting device 10 further includes an encapsulation resin 27 in which the switching element 411 and the capacitor 421 are embedded, and a conductive part 28 provided to the encapsulation resin 27 and constituting a conductive path between the semiconductor light-emitting element 30A and the drive circuit 40A. The semiconductor light-emitting element 30A is composed by a light emission element that emits light in a direction to cross the mounting surface of the semiconductor light-emitting element 30A.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present disclosure relates to a semiconductor light-emitting device.

Background Art

[0002] One of semiconductor light-emitting devices is a semiconductor laser device including a semiconductor laser element as a light source. The semiconductor laser device is widely adopted as a light source device mounted on various electronic devices. Patent Document 1 discloses an example of the semiconductor laser device.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

[0004] [Summary] In recent years, further performance improvement of semiconductor light-emitting devices has been demanded, and a structure that can easily cope with an increase in the number of semiconductor light-emitting elements that can be mounted on a semiconductor light-emitting device while facilitating wiring design has been demanded.

[0005] A semiconductor light-emitting device according to an aspect of the present disclosure includes a semiconductor light-emitting element and a drive circuit that drives the semiconductor light-emitting element. The drive circuit includes a switching element that controls the semiconductor light-emitting element and a capacitor that supplies current to the semiconductor light-emitting element. The semiconductor light-emitting device further includes the encapsulating resin in which a part of the drive circuit is embedded, and a conductive portion provided in the encapsulating resin and constituting a conductive path between the semiconductor light-emitting element and the drive circuit. The semiconductor light-emitting element is constituted by a light-emitting element that emits light in a direction intersecting the mounting surface of the semiconductor light-emitting element.

Brief Description of the Drawings

[0006]

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[0007] [Detailed Description] Hereinafter, some embodiments of the semiconductor light-emitting device in the present disclosure will be described with reference to the accompanying drawings. Note that, for simplicity and clarity of description, the components shown in the drawings are not necessarily drawn to scale. Also, for ease of understanding, hatching lines may be omitted in the cross-sectional views. The accompanying drawings are merely illustrative of the embodiments of the present disclosure and should not be regarded as limiting the present disclosure.

[0008] The following detailed description includes devices, systems, and methods that embody exemplary embodiments of the present disclosure. This detailed description is for illustrative purposes only and is not intended to limit the embodiments of the present disclosure or the application and use of such embodiments.

[0009] [First Embodiment] With reference to FIGS. 1 to 13, the semiconductor light-emitting device 10 of the first embodiment will be described. FIG. 1 shows the upper-layer side planar structure of the semiconductor light-emitting device 10, and FIG. 2 shows an enlarged view of the structure of a part (lower left region) of the semiconductor light-emitting device 10 in FIG. 1. FIG. 3 shows the lower-layer side planar structure of the semiconductor light-emitting device 10. FIG. 4 shows a schematic cross-sectional structure along the line F4-F4 in FIG. 2, and FIG. 5 shows a schematic cross-sectional structure along the line F5-F5 in FIG. 2. FIG. 6 is a schematic perspective view of an exemplary semiconductor light-emitting element. FIG. 7 shows a schematic circuit of a light-emitting system 200 including the semiconductor light-emitting device 10. FIGS. 8 to 13 are schematic cross-sectional views showing an exemplary manufacturing method of the semiconductor light-emitting device 10.

[0010] In the present disclosure, there are cases where the constituent members are described based on the XYZ axes orthogonal to each other shown in the drawings. The term "planar view" used in the present disclosure means viewing the semiconductor light-emitting device 10 in the Z-axis direction.

[0011] [1-1. Overall Structure of Semiconductor Light-Emitting Device] As shown in FIG. 1, the semiconductor light-emitting device 10 includes a substrate 20, one or more (for example, four in FIG. 1) semiconductor light-emitting elements 30A to 30D, and one or more (for example, four in FIG. 1) drive circuits 40A to 40D. In the following description, when the semiconductor light-emitting elements 30A to 30D are not distinguished from each other, the semiconductor light-emitting elements 30A to 30D are described as semiconductor light-emitting elements 30 (or each semiconductor light-emitting element 30). Similarly, when the drive circuits 40A to 40D are not distinguished from each other, the drive circuits 40A to 40D are described as drive circuits 40 (or each drive circuit 40).

[0012] A plurality of semiconductor light-emitting elements 30 and a plurality of drive circuits 40 are mounted on a substrate 20. The semiconductor light-emitting device 10 is embodied as a multi-channel (4 channels in the example of FIG. 1) drive type light-emitting module that drives the plurality of semiconductor light-emitting elements 30 by the plurality of drive circuits 40. However, the semiconductor light-emitting device 10 is not limited to the multi-channel type, and may be a single-channel type using a single drive circuit. Note that the number of semiconductor light-emitting elements 30 and the number of drive circuits 40 can be appropriately changed according to the number of channels.

[0013] The substrate 20 has a rectangular shape in plan view. In the example of FIG. 1, the substrate 20 is square, but may have an arbitrary shape in plan view. Note that plan view means viewing the semiconductor light-emitting device 10 in the thickness direction of the substrate 20 (the direction perpendicular to the paper surface in FIG. 1). The substrate 20 includes a main surface 21, a back surface 22 on the opposite side (see FIGS. 4 and 5), and first to fourth side surfaces 23 to 26. The first and second side surfaces 23 and 24 correspond to both end faces of the substrate 20 in the Y-axis direction. In the example of FIG. 1, the first side surface 23 is located on the lower side of the paper surface, and the second side surface 24 is located on the upper side of the paper surface. The third and fourth side surfaces 25 and 26 correspond to both end faces of the substrate 20 in the X-axis direction. In the example of FIG. 1, the third side surface 25 is located on the left side of the paper surface, and the fourth side surface 26 is located on the right side of the paper surface.

[0014] The substrate 20 includes a sealing resin 27 and a conductive portion 28 provided in the sealing resin 27. In the first embodiment, the substrate 20 is configured as a wiring component including a large number of wiring portions (that is, circuit patterns) formed by, for example, an LDS (Laser Direct Structuring) method with respect to the sealing resin 27 as the conductive portion 28. Therefore, the substrate 20 is different from that using a printed circuit board. At least a part of each drive circuit 40 is embedded in the sealing resin 27, and the conductive portion 28 constitutes a conductive path between the semiconductor light-emitting element 30 and the drive circuit 40 for each drive circuit 40.

[0015] The sealing resin 27 contains a thermosetting insulating resin material and additives. Examples of the insulating resin material are epoxy resin or polyimide resin. The additives contain metal elements that constitute part of the conductive portion 28. In the first embodiment, the material of the conductive portion 28 is, for example, copper (Cu), and the additives contain Cu. However, the material of the conductive portion 28 is not limited to Cu.

[0016] The substrate 20 is configured as, for example, a multilayer substrate. In the first embodiment, the substrate 20 is a two-layer substrate, and the conductive portion 28 includes a first electrode layer 28A on the upper layer side provided on the main surface 21 of the substrate 20 and a second electrode layer 28B on the lower layer side provided on the back surface 22 of the substrate 20 (see FIGS. 4 and 5). The first electrode layer 28A is used as a mounting surface for a plurality of semiconductor light-emitting elements 30. Note that the main surface 21 of the substrate 20 corresponds to the main surface (first surface) of the sealing resin 27, and the back surface 22 of the substrate 20 corresponds to the back surface (second surface opposite to the first surface) of the sealing resin 27.

[0017] As shown in FIGS. 4 and 5, the main surface 21 of the substrate 20 is covered by a main surface resist layer 29A, and the back surface 22 of the substrate 20 is covered by a back surface resist layer 29B. The main surface resist layer 29A and the back surface resist layer 29B are formed of an insulating material such as, for example, epoxy resin or polyimide resin. The main surface resist layer 29A and the back surface resist layer 29B may contain fillers such as silica or alumina. In FIGS. 1 and 2, the opening of the main surface resist layer 29A is indicated by a two-dot chain line, and in FIG. 3, the opening of the back surface resist layer 29B is indicated by a two-dot chain line.

[0018] [1-2. Semiconductor Light-Emitting Element] The plurality of semiconductor light-emitting elements 30 are each composed of a light-emitting element that emits light in a direction (the Z-axis direction in FIG. 1) intersecting the mounting surface of the semiconductor light-emitting element 30, and function as a light source of the semiconductor light-emitting device 10. For example, each semiconductor light-emitting element 30 is composed of a photonic crystal surface-emitting laser (PCSEL: Photonic-Crystal Surface-Emitting Laser) element that outputs laser light in a predetermined wavelength band. The PCSEL element can perform high-output operation (high-brightness operation) by beam emission with high beam quality and a narrow divergence angle, and has the characteristic of low temperature dependence of the operating wavelength. The configuration of each semiconductor light-emitting element 30 is the same. As an example, the PCSEL element employed in each semiconductor light-emitting element 30 has a beam divergence angle represented by the full width at half maximum (FWHM) of 1° or less, more preferably 0.10° or more and 0.15° or less, and a spectral width of 0.2 nm or less. The element size of the PCSEL element is, for example, about 1.0 mm × 1.0 mm in plan view and 0.2 mm or less in thickness. Note that the laser light may be visible light or laser light having a longer wavelength than visible light such as infrared light.

[0019] As shown in FIGS. 1 and 2, each semiconductor light-emitting element 30 has a rectangular shape in plan view, for example, a square shape. The plurality of semiconductor light-emitting elements 30 are intensively arranged in the central region AC of the first electrode layer 28A (substrate 20). Note that the central region AC refers to a region including the center of the substrate 20 in plan view. In one example, a first set including some of the plurality of semiconductor light-emitting elements 30 (in the example of FIG. 1, semiconductor light-emitting elements 30A and 30D) is arranged in a row in the X-axis direction within the central region AC, and a second set including the remaining semiconductor light-emitting elements 30 (in the example of FIG. 1, semiconductor light-emitting elements 30B and 30C) is arranged in a row in the X-axis direction while being adjacent to the first set in the Y-axis direction within the central region AC. Therefore, the plurality of semiconductor light-emitting elements 30 are arranged in a matrix adjacent to each other in the central region AC of the substrate 20. Note that the arrangement of the semiconductor light-emitting elements 30 is not limited to the 2 rows and 2 columns shown in FIG. 1.

[0020] As shown in FIGS. 2 and 4 to 6, each semiconductor light-emitting element 30 includes a front surface electrode 31 provided on the front surface of the element and a back surface electrode 32 provided on the opposite back surface of the element. The semiconductor light-emitting element 30 has a light-emitting region 33 in the central portion of the front surface of the element. The front surface electrode 31 is formed, for example, in a rectangular ring shape including an opening (through hole) that exposes the light-emitting region 33 on the front surface of the element. The back surface electrode 32 is formed, for example, over the entire back surface of the element. The front surface electrode 31 corresponds to the cathode electrode, and the back surface electrode 32 corresponds to the anode electrode.

[0021] In the first embodiment, each semiconductor light-emitting element 30 is mounted on the first electrode layer 28A using a mounting member 35. Note that, for clarity of illustration, the illustration of the mounting member 35 is omitted in FIGS. 1 and 2. The mounting member 35 has a size larger than that of the semiconductor light-emitting element 30 in plan view. In one example, the semiconductor light-emitting element 30 has a size of about 0.9 mm × 0.9 mm, while the mounting member 35 can have a size of about 1.2 mm × 1.2 mm. An example of the material of the mounting member 35 is an alloy of copper (Cu) and tungsten (W), but other metal materials may be used. The mounting member 35 includes, for example, a front surface bonding portion 36. An example of the material of the front surface bonding portion 36 is an alloy of gold (Au) and tin (Sn), but other metal materials may be used. By using such a mounting member 35, the mounting of the semiconductor light-emitting element 30 on the first electrode layer 28A can be facilitated.

[0022] [1-3. Drive Circuit of Semiconductor Light-Emitting Device] As shown in FIG. 1, the drive circuits 40A to 40D are provided to drive a plurality (four in FIG. 1) of semiconductor light-emitting elements 30A to 30D mounted on the semiconductor light-emitting device 10. Each of these drive circuits 40A to 40D is configured to drive one or more of the plurality of semiconductor light-emitting elements 30. In the example of FIG. 1, one semiconductor light-emitting element 30 is provided per channel (each drive circuit 40), and the drive circuits 40A to 40D drive the semiconductor light-emitting elements 30A to 30D, respectively. Since the configurations of the respective drive circuits 40 are the same, hereinafter, the drive circuit 40A will be described, and detailed descriptions of the drive circuits 40B to 40D will be omitted.

[0023] As shown in FIG. 4, the drive circuit 40A includes a switching element 411 and one or more capacitors 421. In the first embodiment, the drive circuit 40A includes one capacitor 421. The switching element 411 is configured to control one or more of the plurality of semiconductor light-emitting elements 30. In the first embodiment, the switching element 411 drives one semiconductor light-emitting element 30 (i.e., the semiconductor light-emitting element 30A). Both the switching element 411 and the capacitor 421 are embedded in the encapsulation resin 27. In FIG. 3, illustration of the first electrode layer 28A and each component mounted on the first electrode layer 28A is omitted, and the encapsulation resin 27 is shown by a dashed line.

[0024] As shown in FIGS. 1 to 4, the switching element 411 is provided in the vicinity of the semiconductor light-emitting element 30A in a plan view. For example, the switching element 411 is provided at a position adjacent to or close to the semiconductor light-emitting element 30A in the Y-axis direction. The switching element 411 has a rectangular shape in a plan view. In the first embodiment, the switching element 411 is, for example, square, but may have an arbitrary plan view shape. For the switching element 411, for example, a vertical transistor is used. Examples of such a vertical transistor include a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor), and a bipolar transistor. In the first embodiment, an n-type vertical MOSFET is used as the switching element 411.

[0025] As shown in FIG. 4, the switching element 411 includes a first surface 41A (the upper surface in FIG. 4) and a second surface 41B (the lower surface in FIG. 4) on the opposite side thereof. The switching element 411 also includes a drain electrode 41D provided on the first surface 41A, a source electrode 41S and a gate electrode 41G provided on the second surface 41B. The drain electrode 41D is provided, for example, over the entire first surface 41A. The source electrode 41S is provided, for example, over most of the second surface 41B. The gate electrode 41G is disposed, for example, near one corner of the second surface 41B (see FIG. 3).

[0026] The capacitor 421 is configured to supply current to one or more of the plurality of semiconductor light-emitting elements 30. In the first embodiment, the capacitor 421 is configured to supply current to one semiconductor light-emitting element 30 (i.e., the semiconductor light-emitting element 30A). As shown in FIGS. 1 to 4, the capacitor 421 is provided in the vicinity of the switching element 411 in a plan view. For example, the capacitor 421 is provided at a position adjacent to or close to the switching element 411 in the Y-axis direction. Further, the capacitor 421 is provided at a position overlapping the semiconductor light-emitting element 30A in a plan view, for example, directly below the semiconductor light-emitting element 30A.

[0027] For example, a silicon capacitor is used for the capacitor 421. Since the silicon capacitor is smaller than, for example, a ceramic capacitor, it has an advantage that it is easy to increase the capacitance per unit area of the substrate. Thereby, the mounting area of the capacitors 421 to 424 in the area of the substrate 20 can be reduced, and the substrate 20 can be miniaturized, and thus the module size of the semiconductor light-emitting device 10 can be reduced.

[0028] The capacitor 421 has a rectangular shape in a plan view. The capacitor 421 has a vertical structure and includes a first electrode 42A and a second electrode 42B that face each other in a direction orthogonal to the main surface 21 of the substrate 20, that is, in the Z-axis direction. The first electrode 42A is located on the first surface (the upper surface in FIG. 4) of the capacitor 421, and the second electrode 42B is located on the second surface (the lower surface in FIG. 4) opposite to the first surface of the capacitor 421.

[0029] Note that, similar to the drive circuit 40A, the drive circuits 40B to 40D each include switching elements 412 to 414 configured in the same manner as the switching element 411 and capacitors 422 to 424 configured in the same manner as the capacitor 421. Also, similar to the drive circuit 40A, the number of capacitors 422 in the drive circuit 40B is, for example, one, and the same applies to the capacitors 423 and 424 in the other drive circuits 40C and 40D. And, similar to the drive circuit 40A, the drive circuits 40B to 40D (the switching elements 412 to 414 and the capacitors 422 to 424) are also embedded in the encapsulating resin 27.

[0030] As shown in FIGS. 1 and 3, the drive circuits 40A to 40D are arranged in the peripheral region AP of the substrate 20 that surrounds the central region AC of the substrate 20 in a plan view. That is, the drive circuits 40A to 40D are arranged in the peripheral region AP that is located outside the semiconductor light-emitting elements 30A to 30D in a plan view.

[0031] The peripheral region AP of the substrate 20 includes a first peripheral region AP1, a second peripheral region AP2, a third peripheral region AP3, and a fourth peripheral region AP4 as four wiring arrangement regions divided based on two virtual center lines VC and HC that are orthogonal to each other and pass through the center of the substrate 20 in a plan view. Note that the virtual center line VC is defined as a line that extends in the Y-axis direction at the central position of the substrate 20 in the X-axis direction. The virtual center line HC is defined as a line that extends in the X-axis direction at the central position of the substrate 20 in the Y-axis direction. The first peripheral region AP1, the second peripheral region AP2, the third peripheral region AP3, and the fourth peripheral region AP4 respectively correspond to the lower left region, the upper left region, the upper right region, and the lower right region of the substrate 20 in FIG. 1.

[0032] The drive circuits 40A to 40D are respectively arranged in the first to fourth peripheral regions AP1 to AP4. In the first embodiment, the drive circuits 40A to 40D have a rotationally symmetric relationship and are respectively arranged in the first to fourth peripheral regions AP1 to AP4. Therefore, the layouts of the drive circuits 40B to 40D (switching elements 412 to 414 and capacitors 422 to 424) in the second to fourth peripheral regions AP2 are equivalent to rotating the layout of the drive circuit 40A (switching element 411 and capacitor 421) in the first peripheral region AP1 clockwise by 90° in plan view in sequence. Also, in the first embodiment, the protection diodes 70A to 70D also have a rotationally symmetric relationship and are respectively arranged in the first to fourth peripheral regions AP1 to AP4.

[0033] [1-4. Protection Diodes] As shown in FIG. 1, in addition to the plurality of semiconductor light-emitting elements 30A to 30D and the plurality of drive circuits 40A to 40D described above, the semiconductor light-emitting device 10 includes a plurality (for example, four in FIG. 1) of protection diodes 70A to 70D that protect the semiconductor light-emitting elements 30 mounted on the semiconductor light-emitting device 10. The protection diodes 70A to 70D are provided, for example, for each channel (drive circuit 40). Since the configurations of the protection diodes 70A to 70D are the same, the protection diode 70A will be described below, and the detailed description of the protection diodes 70B to 70D will be omitted.

[0034] As shown in FIG. 7, the protection diode 70A is connected in anti-parallel to one semiconductor light-emitting element 30A controlled by the switching element 411 (drive circuit 40A). However, the number of semiconductor light-emitting elements 30 connected to the protection diode 70A is not limited to one. The protection diode 70A can be connected in anti-parallel to one or more semiconductor light-emitting elements 30 provided per channel (each drive circuit 40).

[0035] [1-5. Electrode Layer of Conductive Portion] Next, the first and second electrode layers 28A and 28B of the conductive portion 28 will be described. As shown in FIGS. 4 and 5, the first electrode layer 28A is provided as a surface electrode layer located on the main surface 21 of the substrate 20, and the second electrode layer 28B is provided as a back surface electrode layer located on the back surface 22 of the substrate 20.

[0036] [1-5A. First Electrode Layer (Surface Electrode Layer)] As shown in FIG. 1, the first electrode layer 28A, which is a surface electrode layer, includes a plurality of surface electrodes (pattern electrodes) spaced apart from each other. In the first embodiment, the first electrode layer 28A includes first surface electrodes 61A to 61D and second surface electrodes 62A to 62D.

[0037] The first surface electrodes 61A to 61D and the second surface electrodes 62A to 62D are used for mounting the semiconductor light-emitting elements 30A to 30D and the protection diodes 70A to 70D. That is, the first electrode layer 28A includes the mounting surfaces of the semiconductor light-emitting elements 30A to 30D and the protection diodes 70A to 70D. In the first embodiment, since the drive circuits 40A to 40D (switching elements 412 to 414 and capacitors 422 to 424) are embedded in the sealing resin 27, the first electrode layer 28A does not include the mounting surfaces of the drive circuits 40A to 40D.

[0038] Each of the first surface electrodes 61A to 61D has an elongated rectangular shape in plan view. Each of the first surface electrodes 61A to 61D is disposed across both a central region AC and a peripheral region AP (a corresponding one of the first to fourth peripheral regions AP1 to AP4). The first surface electrodes 61A to 61D include portions adjacent to each other within the central region AC as the mounting surfaces of the semiconductor light-emitting elements 30A to 30D. Further, the first surface electrodes 61A to 61D include portions disposed in the first to fourth peripheral regions AP1 to AP4 in a rotationally symmetric relationship. The portions of the first surface electrodes 61A to 61D disposed in the first to fourth peripheral regions AP1 to AP4 are used for mounting the protection diodes 70A to 70D.

[0039] The second surface electrodes 62A to 62D each have a long rectangular shape in a plan view. The second surface electrodes 62A to 62D are respectively disposed in the first to fourth peripheral regions AP1 to AP4 while being adjacent to the first surface electrodes 61A to 61D. Further, the second surface electrodes 62A to 62D are respectively disposed in the first to fourth peripheral regions AP1 to AP4 in a rotationally symmetric relationship. The second surface electrodes 62A to 62D are used for mounting the protection diodes 70A to 70D and the wire W1 described later.

[0040] As shown in FIGS. 4 and 5, the semiconductor light emitting element 30A is mounted on the first surface electrode 61A using the above-described mount member 35. In the first embodiment, the back surface electrode 32 (anode electrode) of the semiconductor light emitting element 30A is joined to the surface joint portion 36 of the mount member 35, and the back surface of the mount member 35 is joined to the first surface electrode 61A with a conductive joining material SD. Although a cross-sectional view is omitted, similar to the semiconductor light emitting element 30A, the semiconductor light emitting elements 30B to 30D are also respectively mounted on the first surface electrodes 61B to 61D using the mount member 35.

[0041] As shown in FIGS. 1 and 2, the semiconductor light emitting elements 30A to 30D are respectively connected to the second surface electrodes 62A to 62D by wires W1. In the first embodiment, the surface electrodes 31 (cathode electrodes) of the semiconductor light emitting elements 30A to 30D are respectively connected to the second surface electrodes 62A to 62D by wires W1. The wire W1 is a bonding wire formed by a wire bonding apparatus, and for example, a conductor such as Au, Al, or Cu is used. The number of the wires W1 is not particularly limited, and may be one or more. In the first embodiment, for example, from the viewpoint of reducing the wiring inductance of the entire circuit, the number of the wires W1 forming a part of the current path of the semiconductor light emitting element 30A is plural (for example, four or more).

[0042] The protection diode 70A is mounted across both the first and second surface electrodes 61A and 62A. The protection diode 70A includes an anode electrode 71 and a cathode electrode 72. In the first embodiment, the anode electrode 71 is joined to the second surface electrode 62A with a conductive bonding material (not shown), and the cathode electrode 72 is joined to the first surface electrode 61A with a conductive bonding material (not shown). Note that, similar to the protection diode 70A, the protection diodes 70B to 70D are also mounted on the first surface electrodes 61B to 61D and the second surface electrodes 62B to 62D, respectively.

[0043] Therefore, the cathode electrodes 72 of the protection diodes 70A to 70D are electrically connected to the back electrodes 32 (anode electrodes) of the semiconductor light-emitting elements 30A to 30D, and the anode electrodes 71 of the protection diodes 70A to 70D are electrically connected to the surface electrodes 31 (cathode electrodes) of the semiconductor light-emitting elements 30A to 30D. That is, the protection diodes 70A to 70D are connected in reverse parallel to the semiconductor light-emitting elements 30A to 30D, respectively.

[0044] [1-5B. Second Electrode Layer (Back Electrode Layer)] As shown in FIG. 3, the second electrode layer 28B, which is the back electrode layer, includes a plurality of back electrodes (pattern electrodes) spaced apart from each other. These back electrodes function as external electrode terminals that are electrically connected to the circuit board when the semiconductor light-emitting device 10 is mounted on the circuit board (not shown). In the first embodiment, the second electrode layer 28B includes a first back electrode 81, second back electrodes 82A to 82D, and third back electrodes 83A to 83D.

[0045] The first back surface electrode 81 is disposed over the central region AC and the first to fourth peripheral regions AP1 to AP4 of the substrate 20, and in a plan view, overlaps with the capacitors 421 to 424, the first surface electrodes 61A to 61D, the switching elements 411 to 414, and the second surface electrodes 62A to 62D. The first back surface electrode 81 is provided for electrical connection with the source electrodes 41S (see FIG. 4) of the switching elements 411 to 414 and the second electrodes 42B (see FIG. 4) of the capacitors 421 to 424, which are respectively embedded in the sealing resin 27. The first back surface electrode 81 includes openings at four positions that overlap with the gate electrodes 41G (see FIG. 4) of the switching elements 411 to 414 in a plan view. The first back surface electrode 81 functions as a ground terminal for supplying a ground voltage.

[0046] The second back surface electrodes 82A to 82D are respectively disposed in the first to fourth peripheral regions AP1 to AP4 and overlap with the gate electrodes 41G (see FIG. 4) of the switching elements 411 to 414 in a plan view. The second back surface electrodes 82A to 82D are provided for electrical connection with the gate electrodes 41G of the switching elements 411 to 414 embedded in the sealing resin 27, and are disposed within the four openings of the above-described first back surface electrode 81. The second back surface electrodes 82A to 82D function as signal terminals for supplying gate voltage signals.

[0047] The third back surface electrodes 83A to 83D are respectively disposed in the first to fourth peripheral regions AP1 to AP4 and overlap with the first surface electrodes 61A to 61D in a plan view. In the example of FIG. 3, the third back surface electrodes 83A to 83D also overlap with the second surface electrodes 62A to 62D, but they do not necessarily overlap with the second surface electrodes 62A to 62D. The third back surface electrodes 83A to 83D are provided for electrical connection with the first surface electrodes 61A to 61D and function as power supply terminals for supplying a power supply voltage.

[0048] [1-6. Connection Structure between Semiconductor Light-Emitting Element and Driving Circuit] The conductive portion 28 includes a plurality of vias (connection conductors) that electrically connect the semiconductor light-emitting elements 30A to 30D, the drive circuits 40A to 40D (switching elements 411 to 414 and capacitors 421 to 424), and the first and second electrode layers 28A, 28B. In the first embodiment, the conductive portion 28 includes the first to sixth vias 91 to 96. The first to sixth vias 91 to 96 are formed of one or more materials selected from the group including, for example, Ti, TiN, Au, Ag, Cu, Al, and W.

[0049] As shown in FIGS. 2 and 4, the first via 91 is disposed in the encapsulating resin 27 at a position overlapping the semiconductor light-emitting element 30A, the first surface electrode 61A, and the first electrode 42A of the capacitor 421 in a plan view. The first via 91 penetrates the encapsulating resin 27 from the first surface electrode 61A to the first electrode 42A of the capacitor 421, and connects the first surface electrode 61A and the first electrode 42A of the capacitor 421. Accordingly, the back surface electrode 32 (anode electrode) of the semiconductor light-emitting element 30A is electrically connected to the first electrode 42A of the capacitor 421.

[0050] The number of the first vias 91 is not particularly limited and may be one or more. In the first embodiment, for example, a plurality of first vias 91 are arranged in a matrix (e.g., 2×2) within the region where the semiconductor light-emitting element 30A, the first surface electrode 61A, and the first electrode 42A of the capacitor 421 overlap. Although detailed description is omitted here, the other first vias 91 that connect the first electrodes 42A of the capacitors 422 to 424 and the first surface electrodes 61B to 61D are similarly configured and arranged.

[0051] As shown in FIGS. 2 and 4, the second via 92 is disposed in the encapsulating resin 27 at a position overlapping the second surface electrode 62A and the drain electrode 41D of the switching element 411 in a plan view. The second via 92 penetrates the encapsulating resin 27 from the second surface electrode 62A to the drain electrode 41D of the switching element 411, and connects the second surface electrode 62A and the drain electrode 41D of the switching element 411. As described above, the second surface electrode 62A is connected to the surface electrode 31 (cathode electrode) of the semiconductor light-emitting element 30A by the wire W1. Therefore, the surface electrode 31 (cathode electrode) of the semiconductor light-emitting element 30A is electrically connected to the drain electrode 41D of the switching element 411.

[0052] The number of the second vias 92 is not particularly limited and may be one or more. In the first embodiment, for example, a plurality of second vias 92 are arranged in a matrix (for example, 3×3) in the region where the second surface electrode 62A and the drain electrode 41D of the switching element 411 overlap. Although detailed description is omitted here, the other second vias 92 that connect the second surface electrodes 62B to 62D and the drain electrodes 41D of the switching elements 412 to 414 are similarly configured and arranged.

[0053] As shown in FIGS. 2 and 5, the third via 93 is disposed in the encapsulating resin 27 at a position overlapping the first surface electrode 61A and the third back surface electrode 83A in a plan view. The third via 93 penetrates the encapsulating resin 27 from the first surface electrode 61A to the third back surface electrode 83A, and connects the first surface electrode 61A and the third back surface electrode 83A. As described above, the third back surface electrode 83A is provided as a power supply terminal, and the first surface electrode 61A is electrically connected to the first electrode 42A of the capacitor 421. Thereby, in the off state of the switching element 411 during the operation of the semiconductor light-emitting device 10, charges based on the power supply voltage are accumulated in the capacitor 421.

[0054] The number of the third vias 93 is not particularly limited and may be one or more. In the first embodiment, for example, a plurality of third vias 93 are arranged in a matrix (e.g., 2×3) within the region where the first surface electrode 61A and the third back surface electrode 83A overlap. Although detailed description is omitted here, the other third vias 93 that connect the first surface electrodes 61B to 61D and the third back surface electrodes 83B to 83D are configured and arranged in the same manner.

[0055] As shown in FIGS. 3 and 4, the fourth via 94 is disposed in the encapsulation resin 27 at a position overlapping the second electrode 42B of the capacitor 421 and the first back surface electrode 81 in a plan view. The fourth via 94 penetrates the encapsulation resin 27 from the second electrode 42B of the capacitor 421 to the first back surface electrode 81, and connects the second electrode 42B of the capacitor 421 and the first back surface electrode 81. As described above, the first back surface electrode 81 is provided as a ground terminal. Therefore, the second electrode 42B of the capacitor 421 is connected to the ground.

[0056] The number of the fourth vias 94 is not particularly limited and may be one or more. In the first embodiment, for example, a plurality of fourth vias 94 are arranged in a matrix (e.g., 2×2) within the region where the capacitor 421 and the first back surface electrode 81 overlap. Although detailed description is omitted here, the other fourth vias 94 that connect the second electrodes 42B of the capacitors 422 to 424 and the first back surface electrode 81 are configured and arranged in the same manner.

[0057] As shown in FIGS. 3 and 4, the fifth via 95 is disposed in the encapsulation resin 27 at a position overlapping the source electrode 41S of the switching element 411 and the first back surface electrode 81 in a plan view. The fifth via 95 penetrates the encapsulation resin 27 from the source electrode 41S of the switching element 411 to the first back surface electrode 81, and connects the source electrode 41S of the switching element 411 and the first back surface electrode 81. Therefore, the source electrode 41S of the switching element 411 is connected to the ground.

[0058] The number of the fifth vias 95 is not particularly limited and may be one or more. In the first embodiment, for example, a plurality (e.g., six) of the fifth vias 95 are arranged in a region where the source electrode 41S of the switching element 411 and the first back electrode 81 overlap. Although detailed description is omitted here, the other fifth vias 95 that connect the source electrodes 41S of the switching elements 412 to 414 and the first back electrode 81 are configured and arranged in the same manner.

[0059] As shown in FIGS. 3 and 4, the sixth via 96 is arranged in the encapsulation resin 27 at a position overlapping the gate electrode 41G of the second back electrode 82A and the switching element 411 in a plan view. The sixth via 96 penetrates the encapsulation resin 27 from the gate electrode 41G of the switching element 411 to the second back electrode 82A, and connects the gate electrode 41G of the switching element 411 and the second back electrode 82A. During the operation of the semiconductor light-emitting device 10, a gate voltage signal is applied to the second back electrode 82A. Thereby, a gate voltage signal is supplied to the gate electrode 41G of the switching element 411. The number of the sixth vias 96 is not particularly limited and may be one or more.

[0060] [1-7. Current Path of Semiconductor Light-Emitting Device] The semiconductor light-emitting device 10 is embodied as a multi-channel drive type light-emitting module in which the drive circuits 40A to 40D drive a plurality of semiconductor light-emitting elements 30A to 30D. As described above, in the semiconductor light-emitting device 10, the drive circuits 40A to 40D are mounted on the substrate 20 together with the semiconductor light-emitting elements 30A to 30D. Therefore, the current paths (conductive paths) between the drive circuits 40A to 40D and the semiconductor light-emitting elements 30A to 30D are formed by the conductive portions 28 of the substrate 20.

[0061] In the first embodiment, the current path is configured in a loop shape through which current flows in the order of the first electrode 42A of the capacitor 421, the first via 91, the first surface electrode 61A of the first electrode layer 28A (surface electrode layer), the mounting member 35, the back electrode 32 (anode electrode) of the semiconductor light-emitting element 30A, the surface electrode 31 (cathode electrode) of the semiconductor light-emitting element 30, the wire W1, the second surface electrode 62A of the first electrode layer 28A, the second via 92, the drain electrode 41D of the switching element 411, the source electrode 41S of the switching element 411, the fifth via 95, the first back electrode 81 of the second electrode layer 28B (back electrode layer), the fourth via 94, and the second electrode 42B of the capacitor 421.

[0062] Although detailed description is omitted here, for each of the other drive circuits 40B to 40D, the same electrical connection as that of the drive circuit 40A is realized, and a loop-shaped current path similar to the above current path is individually configured.

[0063] [1-8. Circuit Configuration of Semiconductor Light-Emitting Device] As shown in FIG. 7, a light-emitting system 200 including the semiconductor light-emitting device 10 includes a DC power supply 201, a capacitor 202 connected in parallel with the DC power supply 201, a current-limiting resistor 203, backflow prevention diodes 204A to 204D, gate drivers 205A to 205D, pulse generators 206A to 206D, and control power supplies 207A to 207D.

[0064] The DC power supply 201, the capacitor 202, and the current-limiting resistor 203 are configured to supply current to the semiconductor light-emitting elements 30A to 30D and the drive circuits 40A to 40D. The DC power supply 201, the capacitor 202, and the current-limiting resistor 203 are an example of a power input unit. The first terminal of the current-limiting resistor 203 is electrically connected to the positive electrode of the DC power supply 201.

[0065] The anodes of the reverse current preventing diodes 204A to 204D are electrically connected to the second terminal of the current limiting resistor 203. The cathodes of the reverse current preventing diodes 204A to 204D are electrically connected to the back electrodes 32 (anode electrodes) of the semiconductor light emitting elements 30A to 30D and the first electrodes 42A of the capacitors 421 to 424 via the third back electrodes 83A to 83D and the first front electrodes 61A to 61D.

[0066] The gate drivers 205A to 205D are electrically connected to the gate electrodes 41G of the switching elements 411 to 414 respectively. In the first embodiment, the gate drivers 205A to 205D are electrically connected to the second back electrodes 82A to 82D respectively. The gate drivers 205A to 205D individually drive the switching elements 411 to 414 by supplying gate voltage signals to the gate electrodes 41G of the switching elements 411 to 414 via the second back electrodes 82A to 82D.

[0067] The pulse generators 206A to 206D and the control power supplies 207A to 207D are electrically connected to the gate drivers 205A to 205D respectively. The pulse generators 206A to 206D are configured to output pulse signals for controlling the switching elements 411 to 414 to the gate drivers 205A to 205D respectively. The control power supplies 207A to 207D are configured to apply operating voltages to the gate drivers 205A to 205D respectively.

[0068] The negative electrode of the DC power supply 201, the capacitor 202, the pulse generators 206A to 206D, the second electrodes 42B of the capacitors 421 to 424, the negative electrodes of the control power supplies 207A to 207D, and the source electrodes 41S of the switching elements 411 to 414 are electrically connected to the ground terminal (the first back electrode 81 of the second electrode layer 28B).

[0069] The drain electrodes 41D of the switching elements 411 to 414 are electrically connected to the surface electrodes 31 (cathode electrodes) of the semiconductor light-emitting elements 30A to 30D and the anode electrodes 71 of the protection diodes 70A to 70D, respectively. The cathode electrodes 72 of the protection diodes 70A to 70D are electrically connected to the back electrodes 32 (anode electrodes) of the semiconductor light-emitting elements 30A to 30D, respectively.

[0070] In the semiconductor light-emitting device 10 configured as described above, when the switching elements 411 to 414 of the drive circuits 40A to 40D are in the off state, the capacitors 421 to 424 are charged by the DC power supply 201. Then, when the switching elements 411 to 414 are switched from the off state to the on state, current flows from the capacitors 421 to 424 to the semiconductor light-emitting elements 30A to 30D through the switching elements 411 to 414. As a result, laser light emitted in pulses is emitted from the semiconductor light-emitting elements 30A to 30D. In this way, the drive circuits 40A to 40D are configured to drive the semiconductor light-emitting elements 30A to 30D individually.

[0071] As an example, the drive circuits 40A to 40D drive the semiconductor light-emitting elements 30A to 30D sequentially. In this case, for example, compared with a semiconductor light-emitting device including only one semiconductor light-emitting element, the pulse emission of each semiconductor light-emitting element 30A to 30D can be adjusted so that the pulse interval of the laser light emitted from the semiconductor light-emitting device 10 becomes shorter. Therefore, an increase in the number of pulses per unit time can be achieved. Further, since the semiconductor light-emitting elements 30A to 30D to be driven by the drive circuits 40A to 40D emit light in order, the heat generation of each semiconductor light-emitting element 30A to 30D can be suppressed as compared with a semiconductor light-emitting device including only one semiconductor light-emitting element.

[0072] [1-9. Method for manufacturing a semiconductor light-emitting device] Next, an exemplary manufacturing method of the semiconductor light-emitting device 10 will be described with reference to FIGS. 8 to 13. Hereinafter, for ease of understanding, a manufacturing method of the semiconductor light-emitting device 10 corresponding to the structure of FIG. 4 along the line F4-F4 of FIG. 2 will be described. In FIGS. 8 to 13, the same components as those shown in FIG. 4 are denoted by the same reference numerals.

[0073] First, as shown in FIG. 8, the switching element 411 and the capacitor 421 are held on the support member 100. At this time, the switching element 411 and the capacitor 421 are in a posture that is upside down compared to that shown in FIG. 4.

[0074] Next, as shown in FIG. 9, a resin layer 27A that covers the switching element 411 and the capacitor 421 is formed on the support member 100. The resin layer 27A is a layer that forms a part of the encapsulation resin 27 in FIG. 4, and is a layer containing a thermosetting insulating resin material and an additive containing a metal element that composes a part of the conductive portion 28. The insulating resin material is, for example, an epoxy resin or a polyimide resin. The resin layer 27A is formed by compression molding.

[0075] Next, as shown in FIG. 10, after removing the support member 100 (see FIG. 9), a fourth via 94 connected to the capacitor 421, fifth and sixth vias 95, 96 connected to the switching element 411, a first back surface electrode 81 connected to the fourth and fifth vias 94, 95, and a second back surface electrode 82A connected to the sixth via 96 are formed.

[0076] In the process of FIG. 10, by irradiating the resin layer 27A with a laser, the underlayers of the first and second back electrodes 81 and 82A and the underlayers of the fourth to sixth vias 94 to 96 are deposited. The underlayers of the fourth to sixth vias 94 to 96 are deposited on the wall surfaces of the through holes (via holes) formed by the laser irradiation. These underlayers are composed of metal elements contained in the additives included in the resin layer 27A. When the metal elements are excited by the laser irradiation, a metal layer containing the metal elements is deposited as the underlayer. Next, a plating layer covering these underlayers is formed. This plating layer is formed of the material of the conductive portion 28 (for example, a material containing Cu). The plating layer is formed, for example, by electroless plating. Thereby, as shown in FIG. 10, the first and second back electrodes 81 and 82A and the fourth to sixth vias 94 to 96 are formed by the underlayer and the plating layer covering the underlayer. Although detailed illustration and description are omitted here, in the process of FIG. 10, the other second back electrodes 82B to 82D and the third back electrodes 83A to 83D, and the third via 93 and the sixth via 96 are formed through laser irradiation and electroless plating by the same method as described above.

[0077] Next, as shown in FIG. 11, the structure of FIG. 10 is turned upside down and held on the support member 101. Next, as shown in FIG. 12, a resin layer 27B covering the resin layer 27A, the switching element 411, and the capacitor 421 is formed. Similar to the resin layer 27A, the resin layer 27B is a layer that forms a part of the encapsulation resin 27 in FIG. 4, and is a layer containing a thermosetting insulating resin material and an additive containing a metal element that composes a part of the conductive portion 28. The resin layer 27B is formed by compression molding. The encapsulation resin 27 that encapsulates the switching element 411 and the capacitor 421 is formed by these resin layers 27A and 27B.

[0078] Next, as shown in FIG. 13, after removing the support member 101 (see FIG. 12), a first via 91 connected to the capacitor 421, a second via 92 connected to the switching element 411, a first surface electrode 61A connected to the first via 91, and a second surface electrode 62A connected to the second via 92 are formed.

[0079] In the process of FIG. 13, by irradiating the resin layer 27B with a laser, an underlying layer of the first and second surface electrodes 61A and 62A and an underlying layer of the first and second vias 91 and 92 are deposited. The underlying layers of the first and second vias 91 and 92 are deposited on the wall surfaces of through holes (via holes) formed by laser irradiation. These underlying layers are composed of metal elements contained in the additives included in the resin layer 27B. When the metal elements are excited by laser irradiation, a metal layer containing the metal elements is deposited as the underlying layer. Next, a plating layer covering these underlying layers is formed. This plating layer is formed of a material of the conductive portion 28 (for example, a material containing Cu). The plating layer is formed, for example, by electroless plating. Thereby, as shown in FIG. 13, the first and second surface electrodes 61A and 62A and the first and second vias 91 and 92 are formed by the underlying layer and the plating layer covering the same. Although detailed illustration and description are omitted here, in the process of FIG. 13, other first surface electrodes 61B to 61D and other second surface electrodes 62B to 62D are formed through laser irradiation and electroless plating by the same method as described above. Note that part or all of the third via 93 may be formed in the process of FIG. 13.

[0080] Next, a semiconductor light-emitting element 30A is mounted on the first surface electrode 61A in the structure of FIG. 13 using a mounting member 35. Thereby, the structure of FIG. 4 is obtained. At this time, semiconductor light-emitting elements 30B to 30D are also mounted on the first surface electrodes 61B to 61D using the mounting member 35. Thereafter, the semiconductor light-emitting elements 30A to 30D are respectively connected to the second surface electrodes 62A to 62D with wires W1 (see FIG. 2). Through the above steps, the semiconductor light-emitting device 10 is manufactured.

[0081] [1-10. Operation of the Semiconductor Light-Emitting Device] In recent years, further performance improvement of semiconductor light-emitting devices has been demanded. In response to such demands, a structure that can accommodate an increase in the number of semiconductor light-emitting elements that can be mounted on a semiconductor light-emitting device while miniaturizing the semiconductor light-emitting device has been demanded.

[0082] Here, in the first embodiment, drive circuits 40A to 40D are mounted on the substrate 20 together with the semiconductor light-emitting elements 30A to 30D, and the drive circuits 40A to 40D (in the first embodiment, the switching elements 411 to 414 and the capacitors 421 to 424) are embedded in the encapsulation resin 27. In this configuration, for example, since each of the capacitors 421 to 424 is embedded in the encapsulation resin 27 at a position overlapping with each of the semiconductor light-emitting elements 30A to 30D in a plan view, miniaturization of the semiconductor light-emitting device 10 can be achieved. Further, since the switching elements 411 to 414 are embedded in the encapsulation resin 27, the number of wires can be reduced as compared with a configuration in which the switching elements 411 to 414 are mounted on the wires exposed from the encapsulation resin 27. This contributes to suppressing an increase in inductance. As a result, in the configuration in which the drive circuits 40A to 40D are embedded in the encapsulation resin 27, while miniaturizing the semiconductor light-emitting device 10 as compared with a configuration in which the drive circuits 40A to 40D are mounted on the wires exposed from the encapsulation resin 27, the degree of freedom in wiring design can be improved.

[0083] Also, in the first embodiment, since each semiconductor light-emitting element 30 is constituted by a light-emitting element (for example, a PCSEL element) that emits light in a direction intersecting the mounting surface (in the first embodiment, the first electrode layer 28A), compared with the case where a semiconductor light-emitting element constituted by an edge-emitting element is arranged at the edge of the substrate 20, for example, without being subject to design constraints such as wiring layout, more semiconductor light-emitting elements 30 can be mounted on the semiconductor light-emitting device 10 with a high degree of layout freedom. Therefore, it is also possible to easily cope with multi-channeling in the multi-channel drive type. As a result, the number of channels can be increased to expand the viewing angle and improve the resolution as required for, for example, LiDAR.

[0084] [1-11. Advantages of the Semiconductor Light-Emitting Device] The semiconductor light-emitting device 10 of the first embodiment has the following advantages. (1-1) The semiconductor light-emitting device 10 includes drive circuits 40A to 40D together with semiconductor light-emitting elements 30A to 30D, and at least a part of each of the drive circuits 40A to 40D is embedded in the encapsulating resin 27. According to this configuration, compared with a configuration in which the entire drive circuits 40A to 40D are mounted on the wiring exposed from the encapsulating resin 27, the wiring design can be facilitated. Further, since each semiconductor light-emitting element 30 is constituted by a light-emitting element that emits light in a direction intersecting the mounting surface, the semiconductor light-emitting element 30 can be disposed in the central region AC of the substrate 20. According to this configuration, compared with the case where a semiconductor light-emitting element constituted by an edge-emitting element is disposed at the edge of the substrate 20, more semiconductor light-emitting elements 30 can be mounted on the semiconductor light-emitting device 10 with a high degree of layout freedom without being subject to design constraints such as wiring layout. Thereby, it is possible to cope with an increase in the number of semiconductor light-emitting elements 30 that can be mounted on the semiconductor light-emitting device 10.

[0085] (1-2) A PCSEL element is adopted for each semiconductor light-emitting element 30. The PCSEL element enables high-output operation (high-brightness operation) by beam emission having high beam quality and a narrow divergence angle. In particular, since the beam divergence angle can be made extremely small (for example, 1° or less) compared with an edge-emitting element, components such as a collimating lens that are required when using an edge-emitting element can be omitted. Thereby, it is possible to reduce the number of parts and to reduce the size and cost of each semiconductor light-emitting element 30 and thus the semiconductor light-emitting device 10 (light-emitting module).

[0086] (1-3) Since the PCSEL element has characteristics such as a narrow spectral width of the wavelength and little temperature dependence of the operating wavelength, for example, optical noise can be reduced and the optical characteristics of the semiconductor light-emitting device 10 (light-emitting module) can be improved. This is advantageous when applying the semiconductor light-emitting device 10 to a laser system such as LiDAR.

[0087] (1-4) Since the semiconductor light-emitting elements 30A to 30D are intensively arranged in the central region AC of the substrate 20 (the first electrode layer 28A), the degree of freedom in the wiring design of the drive circuits 40A to 40D for driving the semiconductor light-emitting elements 30A to 30D and related circuit elements can be improved. As a result, it becomes possible to further increase the number of channels.

[0088] (1-5) The semiconductor light-emitting elements 30A to 30D are arranged in a matrix adjacent to each other in the central region AC of the substrate 20 (the first electrode layer 28A). Thereby, it becomes possible to mount more semiconductor light-emitting elements 30 on the semiconductor light-emitting device 10.

[0089] (1-6) Each of the capacitors 421 to 424 is embedded in the encapsulating resin 27 at a position overlapping with each of the semiconductor light-emitting elements 30A to 30D in a plan view. Thereby, miniaturization of the semiconductor light-emitting device 10 can be achieved.

[0090] (1-7) The switching elements 411 to 414 are embedded in the encapsulating resin 27. Thereby, compared with a configuration in which the switching elements 411 to 414 are mounted on the wiring exposed from the encapsulating resin 27, the number of wires can be reduced. Thereby, an increase in inductance can be suppressed.

[0091] (1-8) Silicon capacitors are adopted for the capacitors 421 to 424. Since a silicon capacitor is smaller than a ceramic capacitor, there is an advantage that it is easy to increase the capacitance per unit area of the substrate. Thereby, the mounting area of the capacitors 421 to 424 in the area of the substrate 20 can be reduced, and the substrate 20 can be miniaturized, and thus the module size of the semiconductor light-emitting device 10 can be reduced.

[0092] (1-9) The drive circuits 40A to 40D are arranged in the peripheral region AP surrounding the central region AC of the substrate 20. Thereby, for example, while intensively arranging the semiconductor light-emitting elements 30A to 30D in the central region AC of the substrate 20, the drive circuits 40A to 40D can be mounted in the peripheral region AP of the substrate 20 with a high degree of design freedom. This promotes multi-channeling more effectively.

[0093] (1-10) The peripheral region AP of the substrate 20 includes first to fourth peripheral regions AP1 to AP4 divided based on two virtual center lines VC and HC, and the drive circuits 40A to 40D are respectively arranged in one of the first to fourth peripheral regions AP1 to AP4. In this configuration, the drive circuits 40A to 40D can be arranged in a symmetric relationship (for example, a rotational symmetry relationship in the first embodiment) within the first to fourth peripheral regions AP1 to AP4 divided by the two virtual center lines VC and HC, that is, around the semiconductor light-emitting elements 30A to 30D mounted in the central region AC. This makes it possible to realize multi-channeling while facilitating the layout of the wiring design.

[0094] (1-11) The semiconductor light-emitting device 10 includes the drive circuits 40A to 40D together with the semiconductor light-emitting elements 30A to 30D. In this configuration, since the current paths (conductive paths) of the currents flowing through each drive circuit 40 and the semiconductor light-emitting element 30 to be driven thereby are formed in the conductive portion 28, the current paths are shorter than when the drive circuits 40A to 40D are provided outside the semiconductor light-emitting device 10. As a result, the inductance caused by the length of the current path can be reduced, and the variation in the inductance of each current path can be reduced. As a result, the pulse width of the laser light emitted by each semiconductor light-emitting element 30 can be made shorter, and the variation in the pulse width can be reduced. In one example, the pulse width of the laser light emitted by each semiconductor light-emitting element 30 is 4 ns or less. Also, in one example, the absolute value of the variation in the pulse width of the laser light emitted by each semiconductor light-emitting element 30 is 10% or less.

[0095] (1-12) The semiconductor light-emitting device 10 includes protection diodes 70A to 70H connected in anti-parallel to the semiconductor light-emitting elements 30A to 30D. With this configuration, it is possible to suppress an excessive reverse bias from being applied to the semiconductor light-emitting element 30 and increase the peak light output of each semiconductor light-emitting element 30.

[0096] (1-13) The number of wires W1 located on the current path between the switching element of each drive circuit 40 (for example, the switching element 411 of the drive circuit 40A) and the semiconductor light-emitting element 30 to be controlled is plural (in the first embodiment, for example, four or more). With this configuration, the inductance in the entire semiconductor light-emitting device 10 can be reduced.

[0097] [Second Embodiment] Next, with reference to FIGS. 14 and 15, the second embodiment will be described. The semiconductor light-emitting device 10 of the second embodiment is different from the semiconductor light-emitting device 10 of the first embodiment in that a single-channel drive type is adopted instead of the multi-channel drive type. Hereinafter, the second embodiment will be described centering on the differences from the semiconductor light-emitting device 10 of the first embodiment, and the same reference numerals will be given to the components common to the first embodiment and the detailed description thereof will be omitted.

[0098] FIG. 14 shows the upper-layer side planar structure of the semiconductor light-emitting device 10 of the second embodiment, and FIG. 15 shows the lower-layer side planar structure of the semiconductor light-emitting device 10 of the second embodiment. In FIG. 14, the opening of the main surface resist layer 29A is indicated by a two-dot chain line, and in FIG. 15, the opening of the back surface resist layer 29B is indicated by a two-dot chain line.

[0099] [2-1. Overall Structure of the Semiconductor Light-Emitting Device of the Second Embodiment] As shown in FIG. 14, the semiconductor light-emitting device 10 of the second embodiment includes a substrate 20, a semiconductor light-emitting element 30A, a drive circuit 40A, and a protection diode 70A. Similar to the first embodiment, the drive circuit 40A includes a switching element 411 and a capacitor 421 respectively embedded in the encapsulating resin 27. A vertical MOSFET is adopted for the switching element 411, and a silicon capacitor is adopted for the capacitor 421. The substrate 20 has a rectangular shape elongated in one direction (X-axis direction).

[0100] [2-2. Electrode layer of the conductive part] The substrate 20 of the second embodiment is a two-layer substrate similar to the first embodiment. The conductive part 28 includes a first electrode layer 28A (see FIG. 14) on the upper layer side and a second electrode layer 28B (see FIG. 15) on the lower layer side. Hereinafter, the first and second electrode layers 28A and 28B of the second embodiment will be described.

[0101] [2-2A. First electrode layer (surface electrode layer)] As shown in FIG. 14, the first electrode layer 28A, which is a surface electrode layer, includes a first surface electrode 261 and a second surface electrode 262 spaced apart from each other. In the example of FIG. 14, the first and second surface electrodes 261 and 262 have the same shape and are in the shape of an elongated rectangle. The first and second surface electrodes 261 and 262 are arranged with their long sides adjacent to each other. The first surface electrode 261 and the second surface electrode 262 are used for mounting the semiconductor light-emitting element 30A and the protection diode 70A.

[0102] The semiconductor light-emitting element 30A is mounted on the first surface electrode 261 using a mount member 35 (see FIG. 6). For clarity of illustration, the illustration of the mount member 35 is omitted in FIG. 14. Although detailed illustration is omitted, similar to the first embodiment, the back electrode 32 (anode electrode) of the semiconductor light-emitting element 30A is joined to the surface joint portion 36 of the mount member 35, and the back surface of the mount member 35 is joined to the first surface electrode 261.

[0103] The surface electrode 31 (cathode electrode) of the semiconductor light-emitting element 30A is connected to the second surface electrode 262 by the wire W1. Similar to the first embodiment, for example, from the viewpoint of reducing the wiring inductance of the entire circuit, the number of wires W1 forming a part of the current path of the semiconductor light-emitting element 30A is plural (for example, four or more).

[0104] The protection diode 70A is mounted across both the first and second surface electrodes 261 and 262, and the anode electrode 71 is joined to the second surface electrode 262 and the cathode electrode 72 is joined to the first surface electrode 261. Therefore, the protection diode 70A is connected in anti-parallel to the semiconductor light-emitting element 30A.

[0105] [2-2B. Second Electrode Layer (Back Surface Electrode Layer)] As shown in FIG. 15, the second electrode layer 28B, which is the back surface electrode layer, includes a first back surface electrode 281, a second back surface electrode 282, and third back surface electrodes 283A and 283B that are spaced apart from each other. These back surface electrodes 281, 282, 283A, and 283B function as external electrode terminals that are electrically connected to the circuit board when the semiconductor light-emitting device 10 is mounted on the circuit board (not shown).

[0106] The first back surface electrode 281 overlaps the first and second surface electrodes 261 and 262 in a plan view. The first back surface electrode 281 has, for example, a rectangular shape that is long in the Y-axis direction. The first back surface electrode 281 is provided for electrical connection with the source electrode 41S of the switching element 411 and the second electrode 42B of the capacitor 421 that are embedded in the sealing resin 27. The first back surface electrode 281 includes an opening at a position that overlaps the gate electrode 41G (see FIG. 4) of the switching element 411 in a plan view. The first back surface electrode 281 functions as a ground terminal that supplies a ground voltage.

[0107] The second back surface electrode 282 overlaps with the gate electrode 41G (see FIG. 4) of the switching element 411 in a plan view. The second back surface electrode 282 is provided for electrical connection with the gate electrode 41G of the switching element 411 embedded in the sealing resin 27, and is disposed within the opening of the first back surface electrode 281 described above. The second back surface electrode 282 functions as a signal terminal for supplying a gate voltage signal.

[0108] The third back surface electrodes 283A and 283B overlap with the first and second surface electrodes 261 and 262 in a plan view. However, the third back surface electrodes 283A and 283B do not necessarily overlap with the second surface electrode 262. The third back surface electrodes 283A and 283B are provided for electrical connection with the first surface electrode 261, and function as power supply terminals for supplying a power supply voltage.

[0109] [2-3. Connection Structure between Semiconductor Light-Emitting Element and Driving Circuit] The conductive portion 28 includes a plurality of vias (connection conductors) that electrically connect the semiconductor light-emitting element 30A, the driving circuit 40A (the switching element 411 and the capacitor 421), and the first and second electrode layers 28A and 28B. In the second embodiment, the conductive portion 28 includes the first to sixth vias 91 to 96. Since the first to sixth vias 91 to 96 of the second embodiment correspond to the first to sixth vias 91 to 96 of the first embodiment described with reference to FIGS. 4 and 5, hereinafter, the first to sixth vias 91 to 96 of the second embodiment will be described with reference to FIGS. 4 and 5 as well.

[0110] As shown in FIG. 14, the first via 91 is disposed in the encapsulating resin 27 at a position overlapping the semiconductor light-emitting element 30A, the first surface electrode 261, and the first electrode 42A of the capacitor 421 (see FIGS. 4 and 5) in a plan view. The first via 91 penetrates the encapsulating resin 27 from the first surface electrode 261 to the first electrode 42A of the capacitor 421, and connects the first surface electrode 261 and the first electrode 42A of the capacitor 421. Therefore, the back surface electrode 32 (anode electrode) of the semiconductor light-emitting element 30A is electrically connected to the first electrode 42A of the capacitor 421. The number of the first vias 91 is not particularly limited and may be one or more. In the example of FIG. 14, the first vias 91 are arranged in a matrix (for example, 2×2).

[0111] The second via 92 is disposed in the encapsulating resin 27 at a position overlapping the second surface electrode 262 and the drain electrode 41D of the switching element 411 (see FIG. 4) in a plan view. The second via 92 penetrates the encapsulating resin 27 from the second surface electrode 262 to the drain electrode 41D of the switching element 411, and connects the second surface electrode 262 and the drain electrode 41D of the switching element 411. As described above, the second surface electrode 262 is connected to the surface electrode 31 (cathode electrode) of the semiconductor light-emitting element 30A by the wire W1. Therefore, the surface electrode 31 (cathode electrode) of the semiconductor light-emitting element 30A is electrically connected to the drain electrode 41D of the switching element 411. The number of the second vias 92 is not particularly limited and may be one or more. In the example of FIG. 14, the second vias 92 are arranged in a matrix (for example, 3×3).

[0112] The third via 93 is disposed in the encapsulating resin 27 at a position overlapping with the first surface electrode 261 and the third back surface electrodes 283A and 283B in a plan view. The third via 93 penetrates the encapsulating resin 27 from the first surface electrode 261 to the third back surface electrodes 283A and 283B, and connects the first surface electrode 261 and the third back surface electrodes 283A and 283B. As described above, the third back surface electrodes 283A and 283B are provided as power terminals, and the first surface electrode 261 is electrically connected to the first electrode 42A of the capacitor 421. Thereby, in the OFF state of the switching element 411 during the operation of the semiconductor light-emitting device 10, charges based on the power supply voltage are accumulated in the capacitor 421. The number of the third vias 93 is not particularly limited and may be one or more. In the example of FIG. 14, the third vias 93 are arranged in a matrix (for example, 4×4) on the third back surface electrode 283A and are also arranged in a matrix (for example, 4×4) on the third back surface electrode 283B.

[0113] As shown in FIG. 15, the fourth via 94 is disposed in the encapsulating resin 27 at a position overlapping with the second electrode 42B of the capacitor 421 (see FIGS. 4 and 5) and the first back surface electrode 281 in a plan view. The fourth via 94 penetrates the encapsulating resin 27 from the second electrode 42B of the capacitor 421 to the first back surface electrode 281, and connects the second electrode 42B of the capacitor 421 and the first back surface electrode 281. As described above, the first back surface electrode 281 is provided as a ground terminal. Therefore, the second electrode 42B of the capacitor 421 is connected to the ground. The number of the fourth vias 94 is not particularly limited and may be one or more. In the example of FIG. 15, the fourth vias 94 are arranged in a matrix (for example, 2×2).

[0114] The fifth via 95 is disposed in the encapsulating resin 27 at a position overlapping with the source electrode 41S of the switching element 411 and the first back surface electrode 81 in a plan view. The fifth via 95 penetrates the encapsulating resin 27 from the source electrode 41S of the switching element 411 to the first back surface electrode 81, and connects the source electrode 41S of the switching element 411 and the first back surface electrode 81. Therefore, the source electrode 41S of the switching element 411 is connected to the ground.

[0115] The number of the fifth vias 95 is not particularly limited and may be one or more. In the second embodiment, for example, a plurality (e.g., six) of the fifth vias 95 are arranged in a region where the source electrode 41S of the switching element 411 overlaps with the first back electrode 281.

[0116] The sixth via 96 is arranged in the sealing resin 27 at a position overlapping with the second back electrode 282 and the gate electrode 41G (see FIG. 4) of the switching element 411 in a plan view. The sixth via 96 penetrates the sealing resin 27 from the gate electrode 41G of the switching element 411 to the second back electrode 282, and connects the gate electrode 41G of the switching element 411 and the second back electrode 282. During the operation of the semiconductor light-emitting device 10, a gate voltage signal is applied to the second back electrode 282. Thereby, a gate voltage signal is supplied to the gate electrode 41G of the switching element 411. The number of the sixth vias 96 is not particularly limited and may be one or more.

[0117] [2-4. Current Path of Semiconductor Light-Emitting Device] In the second embodiment, the current path (conductive path) between the drive circuit 40A and the semiconductor light-emitting element 30A is the first electrode 42A (see FIG. 4) of the capacitor 421, the first via 91, the first surface electrode 261 of the first electrode layer 28A (surface electrode layer), the mount member 35 (see FIG. 6), the back electrode 32 (anode electrode: see FIG. 4) of the semiconductor light-emitting element 30A, the surface electrode 31 (cathode electrode: see FIG. 4) of the semiconductor light-emitting element 30, the wire W1, the second surface electrode 262 of the first electrode layer 28A, the second via 92, the drain electrode 41D (see FIG. 4) of the switching element 411, the source electrode 41S of the switching element 411, the fifth via 95, the first back electrode 281 of the second electrode layer 28B (back electrode layer), the fourth via 94, and the second electrode 42B (see FIG. 4) of the capacitor 421 in this order, and is configured in a loop shape through which current flows.

[0118] [2-5. Circuit Configuration of Semiconductor Light-Emitting Device] The light-emitting system 200 including the semiconductor light-emitting device 10 of the second embodiment can be configured in the same circuit configuration as described with reference to FIG. 7 in the first embodiment, for example. Therefore, detailed description thereof is omitted here.

[0119] [2-6. Advantages of the semiconductor light-emitting device] According to the semiconductor light-emitting device 10 of the second embodiment described above, in addition to the same advantages as the advantages (1-1) to (1-2), (1-6) to (1-9), (1-11) to (1-13) obtained by the semiconductor light-emitting device 10 of the first embodiment, the following advantages can be obtained.

[0120] (2-1) The second electrode layer 28B (rear electrode layer) includes a first rear electrode 281, a second rear electrode 282, and third rear electrodes 283A and 283B. Each of the third rear electrodes 283A and 283B has a larger area than the first rear electrode 281 and the second rear electrode 282. According to this configuration, the heat dissipation area can be increased, and the heat generated in the semiconductor light-emitting device 10 can be efficiently dissipated.

[0121] [Third Embodiment] Next, the third embodiment will be described with reference to FIGS. 16 to 20. The semiconductor light-emitting device 10 of the third embodiment is mainly different from the semiconductor light-emitting device 10 of the first embodiment in that ceramic capacitors are employed for the capacitors 421 to 424 of the drive circuits 40A to 40D. Hereinafter, the third embodiment will be described centering on the differences from the semiconductor light-emitting device 10 of the first embodiment, and the same reference numerals will be given to the components common to the first embodiment, and the detailed description thereof will be omitted.

[0122] FIG. 16 shows the upper-layer side planar structure of the semiconductor light-emitting device 10 of the third embodiment, and FIG. 17 shows an enlarged view of a part (lower left region) of the semiconductor light-emitting device 10 in FIG. 16. FIG. 18 shows the lower-layer side planar structure of the semiconductor light-emitting device 10 of the third embodiment. FIG. 19 shows a schematic cross-sectional structure along the line F19-F19 in FIG. 17, and FIG. 20 shows a schematic cross-sectional structure along the line F20-F20 in FIG. 17. In FIGS. 16 and 17, the openings of the main surface resist layer 29A are indicated by a two-dot chain line, and in FIG. 18, the openings of the back surface resist layer 29B are indicated by a two-dot chain line.

[0123] [3-1. Overall Structure of Semiconductor Light-Emitting Device of Third Embodiment] As shown in FIG. 16, the semiconductor light-emitting device 10 of the third embodiment includes a substrate 20, semiconductor light-emitting elements 30A to 30D, drive circuits 40A to 40D, and protection diodes 70A to 70D. The substrate 20 has a rectangular shape (e.g., a square shape) in plan view. The switching elements 411 to 414 of the drive circuits 40A to 40D are embedded in the encapsulation resin 27. Similar to the first embodiment, vertical MOSFETs are employed for the switching elements 411 to 414. On the other hand, the capacitors 421 to 424 of the drive circuits 40A to 40D are not embedded in the encapsulation resin 27 but are mounted on the first electrode layer 28A of the conductive portion 28. As described above, ceramic capacitors are employed for the capacitors 421 to 424.

[0124] [3-2. Electrode Layers of Conductive Portion] The substrate 20 of the third embodiment is a two-layer substrate similar to the first embodiment, and the conductive portion 28 includes an upper-layer first electrode layer 28A (see FIGS. 16 and 17) and a lower-layer second electrode layer 28B (see FIG. 18). Hereinafter, the first and second electrode layers 28A and 28B of the third embodiment will be described.

[0125] [3-2A. First Electrode Layer (Surface Electrode Layer)] As shown in FIGS. 16 and 17, the first electrode layer 28A, which is a surface electrode layer, includes a plurality of surface electrodes spaced apart from each other. In the third embodiment, the first electrode layer 28A includes first surface electrodes 361A to 361D, second surface electrodes 362A to 362D, and third surface electrodes 363A to 363D.

[0126] The first surface electrodes 361A to 361D, the second surface electrodes 362A to 362D, and the third surface electrodes 363A to 363D are used for mounting the semiconductor light-emitting elements 30A to 30D, the capacitors 421 to 424 of the drive circuits 40A to 40D, and the protection diodes 70A to 70D.

[0127] Each of the first surface electrodes 361A to 361D is arranged across both the central region AC and the peripheral region AP (one corresponding to the first to fourth peripheral regions AP1 to AP4). The first surface electrodes 361A to 361D include portions adjacent to each other within the central region AC as mounting surfaces for the semiconductor light-emitting elements 30A to 30D. Further, the first surface electrodes 361A to 361D include portions arranged in the first to fourth peripheral regions AP1 to AP4 having a rotationally symmetric relationship. The portions of the first surface electrodes 361A to 361D arranged in the first to fourth peripheral regions AP1 to AP4 are used for mounting the capacitors 421 to 424 and the protection diodes 70A to 70D.

[0128] The second surface electrodes 362A to 362D are arranged adjacent to the first surface electrodes 361A to 361D respectively and are arranged in the first to fourth peripheral regions AP1 to AP4 respectively. The second surface electrodes 362A to 362D are arranged in the first to fourth peripheral regions AP1 to AP4 having a rotationally symmetric relationship. The second surface electrodes 362A to 362D are used for mounting the wire W1 and the protection diodes 70A to 70D.

[0129] The third surface electrodes 363A to 363D are respectively disposed in the first to fourth peripheral regions AP1 to AP4 while being adjacent to the first surface electrodes 361A to 361D. The third surface electrodes 363A to 363D are arranged in the first to fourth peripheral regions AP1 to AP4 in a rotationally symmetric relationship. The third surface electrodes 363A to 363D are used for mounting the capacitors 421 to 424.

[0130] As shown in FIGS. 19 and 20, the semiconductor light-emitting element 30A is mounted on the first surface electrode 361A using the mount member 35. In the third embodiment, the back surface electrode 32 (anode electrode) of the semiconductor light-emitting element 30A is joined to the surface joint portion 36 of the mount member 35, and the back surface of the mount member 35 is joined to the first surface electrode 361A with the conductive bonding material SD. Although the cross-sectional view is omitted, similar to the semiconductor light-emitting element 30A, the semiconductor light-emitting elements 30B to 30D are also mounted on the first surface electrodes 361B to 361D using the mount member 35, respectively.

[0131] As shown in FIGS. 16 and 17, the semiconductor light-emitting elements 30A to 30D are respectively connected to the second surface electrodes 362A to 362D by wires W1. In the third embodiment, the surface electrodes 31 (cathode electrodes) of the semiconductor light-emitting elements 30A to 30D are respectively connected to the second surface electrodes 362A to 362D by wires W1. Similar to the first embodiment, from the viewpoint of reducing the wiring inductance of the entire circuit, for example, the number of wires W1 forming a part of the current path of the semiconductor light-emitting element 30A is plural (for example, four or more).

[0132] In the third embodiment, the drive circuit 40A includes a plurality (e.g., four) of capacitors 421. The capacitors 421 are mounted across both the first and third surface electrodes 361A and 363A. Each capacitor 421 includes a first electrode 42A and a second electrode 42B, with the first electrode 42A being joined to the first surface electrode 361A with a conductive bonding material SD (see FIG. 19), and the second electrode 42B being joined to the third surface electrode 363A with a conductive bonding material SD (see FIG. 19). Note that, similar to the drive circuit 40A, the drive circuits 40B to 40D each include a plurality (e.g., four) of capacitors 422 to 424, which are mounted in the same manner as the capacitor 421.

[0133] The protection diode 70A is mounted across both the first and second surface electrodes 361A and 362A, with the anode electrode 71 joined to the second surface electrode 362A and the cathode electrode 72 joined to the first surface electrode 361A. Thus, the protection diode 70A is connected in anti-parallel to the semiconductor light-emitting element 30A. Note that, similar to the protection diode 70A, the protection diodes 70B to 70D are each mounted on the first surface electrodes 361B to 361D and the second surface electrodes 362B to 362D, respectively.

[0134] [3-2B. Second Electrode Layer (Back Surface Electrode Layer)] As shown in FIG. 18, the second electrode layer 28B, which is the back surface electrode layer, includes a plurality of back surface electrodes (pattern electrodes) spaced apart from each other. These back surface electrodes function as external electrode terminals that are electrically connected to a circuit board when the semiconductor light-emitting device 10 is mounted on the circuit board (not shown). In the third embodiment, the second electrode layer 28B includes first back surface electrodes 381A to 381D, a second back surface electrode 382, and third back surface electrodes 383A to 383D.

[0135] The first back electrodes 381A to 381D are arranged in the central region AC of the substrate 20 and overlap with the first front electrodes 361A to 361D in plan view. Each of the first back electrodes 381A to 381D has a rectangular shape in plan view. The first back electrodes 381A to 381D are provided for electrical connection with the first front electrodes 361A to 361D. The first back electrodes 381A to 381D function as power supply terminals for supplying a power supply voltage.

[0136] The second back electrode 382 is arranged over the first to fourth peripheral regions AP1 to AP4 of the substrate 20. The second back electrode 382 is formed in a frame shape surrounding the central region AC of the substrate 20 and overlaps with the switching elements 411 to 414, the first front electrodes 361A to 361D, the second front electrodes 362A to 362D, and the third front electrodes 363A to 363D in plan view. The second back electrode 382 is provided for electrical connection with the source electrodes 41S (see FIG. 20) of the switching elements 411 to 414 embedded in the sealing resin 27 and the third front electrodes 363A to 363D. The first back electrode 382 includes openings at four positions that overlap with the gate electrodes 41G (see FIG. 20) of the switching elements 411 to 414 in plan view. The second back electrode 382 functions as a ground terminal for supplying a ground voltage.

[0137] The third back electrodes 383A to 383D are respectively arranged in the first to fourth peripheral regions AP1 to AP4 and overlap with the gate electrodes 41G (see FIG. 20) of the switching elements 411 to 414 in plan view. The third back electrodes 383A to 383D are provided for electrical connection with the gate electrodes 41G of the switching elements 411 to 414 embedded in the sealing resin 27 and are arranged in the four openings of the second back electrode 382 described above. The third back electrodes 383A to 383D function as signal terminals for supplying a gate voltage signal.

[0138] [3-3. Connection Structure between Semiconductor Light-Emitting Element and Driving Circuit] The conductive portion 28 includes a plurality of vias (connection conductors) that electrically connect the semiconductor light-emitting elements 30A to 30D, the drive circuits 40A to 40D (switching elements 411 to 414 and capacitors 421 to 424), and the first and second electrode layers 28A and 28B. In the third embodiment, the conductive portion 28 includes first to fifth vias 91 to 95.

[0139] As shown in FIGS. 17 and 19, the first via 91 is disposed in the encapsulating resin 27 at a position overlapping the semiconductor light-emitting element 30A, the first surface electrode 361A, and the first back surface electrode 381A in plan view. The first via 91 penetrates the encapsulating resin 27 from the first surface electrode 361A to the first back surface electrode 381A, and connects the first surface electrode 361A and the first back surface electrode 381A. Accordingly, the back surface electrode 32 (anode electrode) of the semiconductor light-emitting element 30A is electrically connected to the first back surface electrode 381A provided as a power supply terminal. Also, as described above, the first surface electrode 361A is electrically connected to the first electrode 42A of the capacitor 421. Thereby, in the off state of the switching element 411 during the operation of the semiconductor light-emitting device 10, charges based on the power supply voltage are accumulated in the capacitor 421. The number of the first vias 91 is not particularly limited and may be one or more. In the third embodiment, the first vias 91 are arranged in a matrix (for example, 3×3). Although detailed description is omitted here, the other first vias 91 that connect the first surface electrodes 361B to 361D and the first back surface electrodes 381B to 381D are similarly configured and arranged.

[0140] The second via 92 is disposed in the encapsulating resin 27 at a position overlapping with the second surface electrode 362A and the drain electrode 41D of the switching element 411 (see FIG. 20) in a plan view. The second via 92 penetrates the encapsulating resin 27 from the second surface electrode 362A to the drain electrode 41D of the switching element 411, and connects the second surface electrode 362A and the drain electrode 41D of the switching element 411. As described above, the second surface electrode 362A is connected to the surface electrode 31 (cathode electrode) of the semiconductor light-emitting element 30A by the wire W1. Therefore, the surface electrode 31 (cathode electrode) of the semiconductor light-emitting element 30A is electrically connected to the drain electrode 41D of the switching element 411. The number of the second vias 92 is not particularly limited and may be one or more. In the third embodiment, the second vias 92 are arranged in a matrix (for example, 3×3). Although detailed description is omitted here, the other second vias 92 connecting the second surface electrodes 362B to 362D and the drain electrodes 41D of the switching elements 412 to 414 are similarly configured and arranged.

[0141] The third via 93 is disposed in the encapsulating resin 27 at a position overlapping with the third surface electrode 363A and the second back surface electrode 382 in a plan view. The third via 93 penetrates the encapsulating resin 27 from the third surface electrode 363A to the second back surface electrode 382, and connects the third surface electrode 363A and the second back surface electrode 382. As described above, the second back surface electrode 382 is provided as a ground terminal, and the third surface electrode 363A is connected to the second electrode 42B of the capacitor 421. Therefore, the second electrode 42B of the capacitor 421 is connected to the ground. The number of the third vias 93 is not particularly limited and may be one or more. In the third embodiment, the third vias 93 are arranged in a matrix (for example, 2×6). Although detailed description is omitted here, the other third vias 93 connecting the third surface electrodes 363B to 363D and the second back surface electrode 382 are similarly configured and arranged.

[0142] As shown in FIGS. 18 and 20, the fourth via 94 is disposed in the encapsulating resin 27 at a position overlapping with the source electrode 41S of the switching element 411 and the second back surface electrode 382 in a plan view. The fourth via 94 penetrates the encapsulating resin 27 from the source electrode 41S of the switching element 411 to the second back surface electrode 382, and connects the source electrode 41S of the switching element 411 and the second back surface electrode 382. Therefore, the source electrode 41S of the switching element 411 is connected to the ground. The number of the fourth vias 94 is not particularly limited and may be one or more. In the third embodiment, for example, seven fourth vias 94 are disposed. Although detailed description is omitted here, the other fourth vias 94 that connect the source electrodes 41S of the switching elements 412 to 414 and the second back surface electrode 382 are similarly configured and disposed.

[0143] The fifth via 95 is disposed in the encapsulating resin 27 at a position overlapping with the third back surface electrode 383A and the gate electrode 41G of the switching element 411 (see FIG. 20) in a plan view. The fifth via 95 penetrates the encapsulating resin 27 from the gate electrode 41G of the switching element 411 to the third back surface electrode 383A, and connects the gate electrode 41G of the switching element 411 and the third back surface electrode 383A. During the operation of the semiconductor light-emitting device 10, a gate voltage signal is applied to the third back surface electrode 383A. Thereby, a gate voltage signal is supplied to the gate electrode 41G of the switching element 411. The number of the fifth vias 95 is not particularly limited and may be one or more. Although detailed description is omitted here, the other fifth vias 95 that connect the gate electrodes 41G of the switching elements 412 to 414 and the third back surface electrodes 383B to 383D are similarly configured and disposed.

[0144] [3-4. Current Path of Semiconductor Light-Emitting Device] In the third embodiment, the current path (conductive path) between the drive circuit 40A and the semiconductor light-emitting element 30A is formed in a loop shape through which current flows in the order of the first electrode 42A of the capacitor 421, the first surface electrode 361A of the first electrode layer 28A (surface electrode layer), the mounting member 35, the back surface electrode 32 (anode electrode) of the semiconductor light-emitting element 30A, the surface electrode 31 (cathode electrode) of the semiconductor light-emitting element 30, the wire W1, the second surface electrode 362A of the first electrode layer 28A, the second via 92, the drain electrode 41D of the switching element 411, the source electrode 41S of the switching element 411, the fourth via 94, the second back surface electrode 382 of the second electrode layer 28B (back surface electrode layer), the third via 93, the third surface electrode 363A of the first electrode layer 28A, and the second electrode 42B of the capacitor 421.

[0145] Although detailed description is omitted here, for each of the other drive circuits 40B to 40D, the same electrical connection as that of the drive circuit 40A is realized, and a loop-shaped current path similar to the above current path is individually configured.

[0146] [3-5. Circuit Configuration of Semiconductor Light-Emitting Device] The light-emitting system 200 including the semiconductor light-emitting device 10 of the third embodiment can be configured in the same manner as the circuit configuration described with reference to FIG. 7 in the first embodiment. Therefore, detailed description is omitted here.

[0147] [3-6. Advantages of Semiconductor Light-Emitting Device] According to the semiconductor light-emitting device 10 of the third embodiment described above, in addition to the advantages (1-1) to (1-5), (1-7), (1-9) to (1-13) obtained by the semiconductor light-emitting device 10 of the first embodiment, the following advantages can be obtained.

[0148] (3-1) Ceramic capacitors are employed for the capacitors 421 to 424. Thereby, the cost of the semiconductor light-emitting device 10 can be reduced as compared with the case where silicon capacitors are employed.

[0149] (3-2) Each drive circuit 40 includes a plurality of capacitors connected in parallel. For example, drive circuit 40A includes four capacitors 421 connected in parallel, and the same number of capacitors are provided in the other drive circuits 40B to 40D. In this configuration, the inductance can be reduced compared to the case where each drive circuit 40 includes a single capacitor.

[0150] [Fourth Embodiment] Next, with reference to FIGS. 21 to 25, the fourth embodiment will be described. The semiconductor light-emitting device 10 of the fourth embodiment is mainly different from the semiconductor light-emitting device 10 of the first embodiment in that lateral transistors are adopted for the switching elements 411 to 414 of the drive circuits 40A to 40D. Hereinafter, the fourth embodiment will be described centering on the differences from the semiconductor light-emitting device 10 of the first embodiment, and the same reference numerals will be given to the components common to the first embodiment and the detailed description thereof will be omitted.

[0151] FIG. 21 shows the upper-layer side planar structure of the semiconductor light-emitting device 10 of the fourth embodiment, and FIG. 22 shows an enlarged structure of a part (lower left region) of the semiconductor light-emitting device 10 of FIG. 21. FIG. 23 shows the lower-layer side planar structure of the semiconductor light-emitting device 10 of the fourth embodiment. FIG. 24 shows a schematic cross-sectional structure along line F24-F24 in FIG. 22, and FIG. 25 shows a schematic cross-sectional structure along line F25-F25 in FIG. 22. In FIGS. 21 and 22, the openings of the main surface resist layer 29A are indicated by a two-dot chain line, and in FIG. 23, the openings of the back surface resist layer 29B are indicated by a two-dot chain line.

[0152] [4-1. Overall Structure of Semiconductor Light-Emitting Device of Fourth Embodiment] As shown in Fig. 21, the semiconductor light-emitting device 10 of the fourth embodiment includes a substrate 20, semiconductor light-emitting elements 30A to 30D, drive circuits 40A to 40D, and protection diodes 70A to 70D. The substrate 20 has a rectangular shape (e.g., a square shape) in plan view. The switching elements 411 to 414 of the drive circuits 40A to 40D are not embedded in the encapsulating resin 27 but are mounted on the first electrode layer 28A of the conductive portion 28. As described above, lateral transistors are adopted for the switching elements 411 to 414. On the other hand, the capacitors 421 to 424 of the drive circuits 40A to 40D are embedded in the encapsulating resin 27. Similar to the first embodiment, silicon capacitors are adopted for the capacitors 421 to 424.

[0153] An example of the lateral transistor is a nitride semiconductor transistor using a nitride semiconductor (e.g., gallium nitride (GaN)). In the fourth embodiment, for example, a high electron mobility transistor (HEMT) using a nitride semiconductor is used. Note that as long as it is a lateral transistor, a MOSFET may be used for the switching elements 411 to 414.

[0154] [4-2. Electrode layer of the conductive portion] The substrate 20 of the fourth embodiment is a two-layer substrate similar to the first embodiment, and the conductive portion 28 includes an upper first electrode layer 28A (see Figs. 21 and 22) and a lower second electrode layer 28B (see Fig. 23). Hereinafter, the first and second electrode layers 28A and 28B of the fourth embodiment will be described.

[0155] [4-2A. First electrode layer (surface electrode layer)] As shown in Figs. 21 and 22, the first electrode layer 28A, which is a surface electrode layer, includes a plurality of surface electrodes spaced apart from each other. In the fourth embodiment, the first electrode layer 28A includes first surface electrodes 461A to 461D, second surface electrodes 462A to 462D, third surface electrodes 463A to 463D, and fourth surface electrodes 464A to 464D.

[0156] The first surface electrodes 461A to 461D, the second surface electrodes 462A to 462D, the third surface electrodes 463A to 463D, and the fourth surface electrodes 464A to 464D are used for mounting the semiconductor light-emitting elements 30A to 30D, the switching elements 411 to 414 of the drive circuits 40A to 40D, and the protection diodes 70A to 70D.

[0157] Each of the first surface electrodes 461A to 461D is disposed across both the central region AC and the peripheral region AP (one corresponding among the first to fourth peripheral regions AP1 to AP4). The first surface electrodes 461A to 461D include, as mounting surfaces for the semiconductor light-emitting elements 30A to 30D, portions adjacent to each other within the central region AC. Further, the first surface electrodes 461A to 461D include portions disposed in the first to fourth peripheral regions AP1 to AP4 in a rotationally symmetric relationship. The portions of the first surface electrodes 461A to 461D disposed in the first to fourth peripheral regions AP1 to AP4 are used for mounting the protection diodes 70A to 70D.

[0158] The second surface electrodes 462A to 462D are disposed in the first to fourth peripheral regions AP1 to AP4 while being adjacent to the first surface electrodes 461A to 461D, the third surface electrodes 463A to 463D, and the fourth surface electrodes 464A to 464D, respectively. The second surface electrodes 462A to 462D are disposed in the first to fourth peripheral regions AP1 to AP4 in a rotationally symmetric relationship. The second surface electrodes 462A to 462D are used for mounting the wire W1, as well as the switching elements 411 to 414 and the protection diodes 70A to 70D.

[0159] The third surface electrodes 463A to 463D are disposed in the first to fourth peripheral regions AP1 to AP4 while being adjacent to the second surface electrodes 462A to 462D and the fourth surface electrodes 464A to 464D, respectively. The third surface electrodes 463A to 463D are disposed in the first to fourth peripheral regions AP1 to AP4 in a rotationally symmetric relationship. The third surface electrodes 463A to 463D are used for mounting the switching elements 411 to 414.

[0160] The fourth surface electrodes 464A to 464D are respectively disposed in the first to fourth peripheral regions AP1 to AP4 while being adjacent to the second surface electrodes 462A to 462D and the third surface electrodes 463A to 463D. The fourth surface electrodes 464A to 464D are arranged in the first to fourth peripheral regions AP1 to AP4 in a rotationally symmetric relationship. The fourth surface electrodes 464A to 464D are used for mounting the switching elements 411 to 414.

[0161] As shown in FIGS. 24 and 25, the semiconductor light-emitting element 30A is mounted on the first surface electrode 461A using the mount member 35. In the fourth embodiment, the back electrode 32 (anode electrode) of the semiconductor light-emitting element 30A is joined to the surface joint portion 36 of the mount member 35, and the back surface of the mount member 35 is joined to the first surface electrode 461A with the conductive bonding material SD. Although the cross-sectional view is omitted, similar to the semiconductor light-emitting element 30A, the semiconductor light-emitting elements 30B to 30D are also respectively mounted on the first surface electrodes 461B to 461D using the mount member 35.

[0162] As shown in FIGS. 21 and 22, the semiconductor light-emitting elements 30A to 30D are respectively connected to the second surface electrodes 462A to 462D by wires W1. In the fourth embodiment, the surface electrodes 31 (cathode electrodes) of the semiconductor light-emitting elements 30A to 30D are respectively connected to the second surface electrodes 462A to 462D by wires W1. Similar to the first embodiment, for example, from the viewpoint of reducing the wiring inductance of the entire circuit, the number of wires W1 forming a part of the current path of the semiconductor light-emitting element 30A is plural (for example, four or more).

[0163] In the fourth embodiment, the switching elements 411 to 414 are lateral transistors as described above. As shown in FIG. 22, the switching element 411 includes a drain electrode 41D mounted on the second surface electrode 462A, a gate electrode 41G mounted on the third surface electrode 463A, and a source electrode 41S mounted on the fourth surface electrode 464A. For example, as shown in FIG. 24, the drain electrode 41D is joined to the second surface electrode 462A by a joint portion SD such as solder. Although not shown, the gate electrode 41G and the source electrode 41S are also joined to the third surface electrode 463A and the fourth surface electrode 464A by joint portions, respectively. Note that, similar to the switching element 411, the switching elements 412 to 414 are also mounted on the second surface electrodes 462B to 462D, the third surface electrodes 463B to 463D, and the fourth surface electrodes 464B to 464D, respectively.

[0164] The protection diode 70A is mounted across both the first and second surface electrodes 461A and 462A, with the anode electrode 71 joined to the second surface electrode 462A and the cathode electrode 72 joined to the first surface electrode 461A. Therefore, the protection diode 70A is connected in anti-parallel to the semiconductor light-emitting element 30A. Note that, similar to the protection diode 70A, the protection diodes 70B to 70D are also mounted on the first surface electrodes 461B to 461D and the second surface electrodes 462B to 462D, respectively.

[0165] [4-2B. Second Electrode Layer (Back Surface Electrode Layer)] As shown in FIG. 23, the second electrode layer 28B, which is the back surface electrode layer, includes a plurality of back surface electrodes (pattern electrodes) spaced apart from each other. These back surface electrodes function as external electrode terminals that are electrically connected to a circuit board when the semiconductor light-emitting device 10 is mounted on the circuit board (not shown). In the fourth embodiment, the second electrode layer 28B includes a first back surface electrode 481, second back surface electrodes 482A to 482D, and third back surface electrodes 483A to 483D.

[0166] The first back surface electrode 481 is disposed across the central region AC and the first to fourth peripheral regions AP1 to AP4 of the substrate 20, and in a plan view, it overlaps with the capacitors 421 to 424, the first surface electrodes 461A to 461D, and the fourth surface electrodes 464A to 464D. The first back surface electrode 481 is provided for electrical connection with the second electrodes 42B (see FIG. 24) of the capacitors 421 to 424 and the fourth surface electrodes 464A to 464D embedded in the sealing resin 27. The first back surface electrode 481 functions as a ground terminal for supplying a ground voltage.

[0167] The second back surface electrodes 482A to 482D are respectively disposed in the first to fourth peripheral regions AP1 to AP4, and in a plan view, they overlap with the third surface electrodes 463A to 463D. The second back surface electrodes 482A to 482D are provided for electrical connection with the third surface electrodes 463A to 463D. The second back surface electrodes 482A to 482D function as signal terminals for supplying gate voltage signals.

[0168] The third back surface electrodes 483A to 483D are respectively disposed in the first to fourth peripheral regions AP1 to AP4, and in a plan view, they overlap with the first surface electrodes 461A to 461D. The third back surface electrodes 483A to 483D are provided for electrical connection with the first surface electrodes 461A to 461D. The third back surface electrodes 483A to 483D function as power supply terminals for supplying a power supply voltage.

[0169] [4-3. Connection Structure between Semiconductor Light-Emitting Element and Driving Circuit] The conductive portion 28 includes a plurality of vias (connection conductors) that electrically connect the semiconductor light-emitting elements 30A to 30D and the driving circuits 40A to 40D (switching elements 411 to 414 and capacitors 421 to 424) to the first and second electrode layers 28A and 28B. In the fourth embodiment, the conductive portion 28 includes the first to fifth vias 91 to 95.

[0170] As shown in FIGS. 22 and 24, the first via 91 is disposed in the encapsulation resin 27 at a position overlapping the semiconductor light-emitting element 30A, the first surface electrode 461A, and the first electrode 42A of the capacitor 421 in a plan view. The first via 91 penetrates the encapsulation resin 27 from the first surface electrode 461A to the first electrode 42A of the capacitor 421, and connects the first surface electrode 461A and the first electrode 42A of the capacitor 421. As described above, the first surface electrode 461A is electrically connected to the back surface electrode 32 (anode electrode) of the semiconductor light-emitting element 30A. Therefore, the back surface electrode 32 (anode electrode) of the semiconductor light-emitting element 30A is electrically connected to the first electrode 42A of the capacitor 421. The number of the first vias 91 is not particularly limited and may be one or more. In the fourth embodiment, the first vias 91 are arranged in a matrix (for example, 2×2). Although detailed description is omitted here, the other first vias 91 that connect the first surface electrodes 461B to 461D and the first electrodes 42A of the capacitors 422 to 424 are similarly configured and arranged.

[0171] The second via 92 is disposed in the encapsulation resin 27 at a position overlapping the fourth surface electrode 464A and the second back surface electrode 481 in a plan view. The second via 92 penetrates the encapsulation resin 27 from the fourth surface electrode 464A to the second back surface electrode 481, and connects the fourth surface electrode 464A and the second back surface electrode 481. As described above, the fourth surface electrode 464A is connected to the source electrode 41S of the switching element 411, and the second back surface electrode 481 is provided as a ground terminal. Therefore, the source electrode 41S of the switching element 411 is connected to the ground. The number of the second vias 92 is not particularly limited and may be one or more. In the fourth embodiment, the second vias 92 are arranged in a matrix (for example, 2×4). Although detailed description is omitted here, the other second vias 92 that connect the fourth surface electrodes 464B to 464D and the second back surface electrode 481 are similarly configured and arranged.

[0172] The third via 93 is disposed in the encapsulation resin 27 at a position overlapping with the third surface electrode 463A and the second back surface electrode 482A in a plan view. Although a cross-sectional view is omitted, the third via 93 penetrates the encapsulation resin 27 from the third surface electrode 463A to the second back surface electrode 482A, and connects the third surface electrode 463A and the second back surface electrode 482A. As described above, the third surface electrode 463A is connected to the gate electrode 41G of the switching element 411, and the second back surface electrode 482A is provided as a signal terminal for supplying a gate voltage signal. Therefore, a gate voltage signal is supplied to the gate electrode 41G of the switching element 411 during the operation of the semiconductor light-emitting device 10.

[0173] As shown in FIGS. 22 and 25, the fourth via 94 is disposed in the encapsulation resin 27 at a position overlapping with the first surface electrode 461A and the third back surface electrode 483A in a plan view. The third via 93 penetrates the encapsulation resin 27 from the first surface electrode 461A to the third back surface electrode 483A, and connects the first surface electrode 461A and the third back surface electrode 483A. As described above, the first surface electrode 461A is electrically connected to the first electrode 42A of the capacitor 422, and the third back surface electrode 483A is provided as a power supply terminal. Thereby, charges based on the power supply voltage are accumulated in the capacitor 421 in the off state of the switching element 411 during the operation of the semiconductor light-emitting device 10. The number of the fourth vias 94 is not particularly limited and may be one or more. In the fourth embodiment, the fourth vias 94 are arranged in a matrix (for example, 2×3). Although detailed description is omitted here, the other fourth vias 94 connecting the first surface electrodes 461B to 461D and the third back surface electrodes 483B to 483D are similarly configured and arranged.

[0174] As shown in FIGS. 23 and 25, the fifth via 95 is disposed in the encapsulation resin 27 at a position overlapping the second electrode 42B of the capacitor 421 and the first back electrode 481 in a plan view. The fifth via 95 penetrates the encapsulation resin 27 from the second electrode 42B of the capacitor 421 to the first back electrode 481, and connects the second electrode 42B and the first back electrode 481 of the capacitor 421. As described above, the first back electrode 481 is provided as a ground terminal. Therefore, the second electrode 42B of the capacitor 421 is connected to the ground. The number of the fifth vias 95 is not particularly limited and may be one or more. In the fourth embodiment, the fifth vias 95 are arranged in a matrix (for example, 2×2). Although detailed description is omitted here, the other fifth vias 95 that connect the second electrodes 42B and the first back electrode 481 of the capacitors 422 to 424 are configured and arranged in the same manner.

[0175] [4-4. Current Path of Semiconductor Light-Emitting Device] In the fourth embodiment, the current path (conductive path) between the drive circuit 40A and the semiconductor light-emitting element 30A is configured in a loop shape in which current flows in the order of the first electrode 42A of the capacitor 421, the first via 91, the first surface electrode 461A of the first electrode layer 28A (surface electrode layer), the mount member 35, the back electrode 32 (anode electrode) of the semiconductor light-emitting element 30A, the surface electrode 31 (cathode electrode) of the semiconductor light-emitting element 30, the wire W1, the second surface electrode 462A of the first electrode layer 28A, the drain electrode 41D of the switching element 411, the source electrode 41S of the switching element 411, the fourth surface electrode 464A of the first electrode layer 28A, the second via 92, the first back electrode 481 of the second electrode layer 28B (back electrode layer), the fifth via 95, and the second electrode 42B of the capacitor 421.

[0176] Although detailed description is omitted here, for each of the other drive circuits 40B to 40D, the same electrical connection as that of the drive circuit 40A is realized, and a loop-shaped current path similar to the above current path is individually configured.

[0177] [4-5. Circuit Configuration of Semiconductor Light-Emitting Device] The light-emitting system 200 including the semiconductor light-emitting device 10 of the fourth embodiment can be configured in the same circuit configuration as described with reference to FIG. 7 in the first embodiment, for example. Therefore, detailed description is omitted here.

[0178] [4-6. Advantages of the Semiconductor Light-Emitting Device] According to the semiconductor light-emitting device 10 of the fourth embodiment described above, in addition to the same advantages (1-1) to (1-6), (1-8) to (1-13) as those obtained by the semiconductor light-emitting device 10 of the first embodiment, the following advantages can be obtained.

[0179] (4-1) Nitride semiconductor transistors (for example, GaN-HEMT in the fourth embodiment), which are an example of horizontal transistors, are employed for the switching elements 411 to 414. With this configuration, a semiconductor light-emitting device 10 using a nitride semiconductor transistor can be provided.

[0180] [Modification Example] The above embodiments can be implemented with the following modifications. Also, the above embodiments and each of the following modification examples can be implemented in combination with each other within a technically non-conflicting range.

[0181] ·In each of the above embodiments, the semiconductor light-emitting element 30 is mounted using the mounting member 35 on the conductive portion 28 (first electrode layer 28A) exposed from the encapsulating resin 27, but the semiconductor light-emitting element 30 may be mounted using a surface-mount package 300 as described below with reference to FIG. 26.

[0182] FIG. 26 is a schematic cross-sectional view of a semiconductor light-emitting device 10 including a surface-mount package 300. The surface-mount package 300 is a ceramic package formed by laminating a plurality of ceramic layers and includes a first accommodating portion 301 and a second accommodating portion 302. The first accommodating portion 301 includes a first land 311 and is configured to be able to accommodate the mounting member 35. The mounting member 35 is mounted on the first land 311.

[0183] The second housing portion 302 is connected to the first housing portion 301 in a stepped manner and is configured to be able to house the semiconductor light-emitting element 30 mounted on the mount member 35. The second housing portion 302 includes an annular second land 312, and the surface electrode 31 of the semiconductor light-emitting element 30 is connected to the annular second land 312 by a plurality of wires W1. Although only two wires W1 are shown in FIG. 26, actually, the surface electrode 31 of the semiconductor light-emitting element 30 is connected to the annular second land 312 by a larger number of wires W1.

[0184] The surface mount package 300 further includes a first through-conductor 303 and a second through-conductor 304 provided to penetrate through the surface mount package 300. The first through-conductor 303 has a first end connected to the first land 311 and a second end exposed from the surface mount package 300. The second through-conductor 304 has a first end connected to the second land 312 and a second end exposed from the surface mount package 300.

[0185] In the example of FIG. 26, the surface mount package 300 is mounted on the first electrode layer 28A of the semiconductor light-emitting device 10 of the first embodiment by the conductive bonding material SD. The second end of the first through-conductor 303 is joined to the second surface electrode 62A, and the second end of the second through-conductor 304 is joined to the first surface electrode 61A. Although not shown, the first through-conductor 303 is similarly joined to the other second surface electrodes 62B to 62D, and the second through-conductor 304 is similarly joined to the other first surface electrodes 61B to 61D.

[0186] By connecting the wire W1 to the second land 312 using such a surface mount package 300, the length of the wire W1 can be shortened in a configuration where the semiconductor light-emitting element 30 is mounted using the mount member 35. Thereby, the resistance and inductance can be reduced. In addition, since a large number of wires W1 can be connected to the annular second land 312 surrounding the semiconductor light-emitting element 30, it becomes possible to further reduce the resistance and inductance.

[0187] ·In each of the above embodiments, a PCSEL element is adopted for each semiconductor light-emitting element 30. However, as will be described below with reference to FIG. 27, while an edge-emitting element is adopted for each semiconductor light-emitting element 30, a light reflection element 50 may be used in combination.

[0188] FIG. 27 is a schematic plan view of another example of a semiconductor light-emitting device using a combination of a semiconductor light-emitting element 30 constituted by an edge-emitting element and a light reflection element 50. The semiconductor light-emitting element 30 is constituted by an edge-emitting laser (EEL) element that outputs laser light in a predetermined wavelength band. Note that the laser light may be visible light or laser light having a wavelength longer than visible light such as infrared light.

[0189] The light reflection element 50 is disposed in the central region AC of the substrate 20 (the first conductive layer 28A) of each of the above embodiments. A plurality (eight in the example of FIG. 27) of semiconductor light-emitting elements 30 (edge-emitting elements) are disposed around the light reflection element 50. The light reflection element 50 is configured to reflect the light emitted from the semiconductor light-emitting element 30 (edge-emitting element) in a direction intersecting the substrate 20. An example of the light reflection element 50 is a light reflection mirror configured to reflect light at a predetermined angle with respect to the incident direction. In the example of FIG. 27, a mirror having four reflecting surfaces 51A to 51D having a reflection angle of 45° and configured to reflect light in a direction perpendicular to the incident direction is used as the light reflection element 50.

[0190] Note that the light reflection element 50 is not limited to only a mirror. Another example of the light reflection element 50 is a diffraction grating configured to diffract light at a predetermined angle with respect to the incident direction. In this case, the diffraction grating may be either a reflection type or a transmission type. In the case of the reflection type, similar to the case of the mirror, the diffraction grating can be configured to reflect light in a direction perpendicular to the incident direction. In the case of the transmission type, the diffraction grating can be configured to emit diffracted light in a direction perpendicular to the incident direction of the light by refraction of the light. Thus, instead of the light-emitting element that emits light in a direction intersecting the mounting surface, it is also possible to use a combination of an edge-emitting element and a light reflection element 50.

[0191] ·In each of the above embodiments, a PCSEL element is adopted for each semiconductor light-emitting element 30, but it is not limited to the PCSEL element. For example, a vertical-cavity surface-emitting laser (VCSEL) element may be adopted as a light-emitting element that emits light in a direction intersecting the mounting surface.

[0192] ·In each of the above embodiments, the drive circuits 40A to 40D are arranged in a rotationally symmetric relationship in the first to fourth peripheral regions AP1 to AP4, but they may be arranged in an arbitrary layout in the peripheral region AP. ·In the third embodiment above, the number of ceramic capacitors provided in each drive circuit 40 may be one.

[0193] ·Gate drivers 205A to 205D may be mounted on the substrate 20 of the first embodiment. That is, the semiconductor light-emitting device 10 may include the gate drivers 205A to 205D.

[0194] ·Protection diodes 70A to 70D may not be mounted on the substrate 20 of the second embodiment. That is, the semiconductor light-emitting device 10 may not include the protection diodes 70A to 70D.

[0195] The term "on ~" used in the present disclosure includes the meanings of "on ~" and "above ~" unless it is clearly shown otherwise by the context. Therefore, for example, the expression "the first element is mounted on the second element" may mean that in some embodiments, the first element may be directly disposed on the second element in contact with the second element, but in other embodiments, it is intended that the first element may be disposed above the second element without contacting the second element. That is, the term "on ~" does not exclude a structure in which other elements are formed between the first element and the second element.

[0196] The Z-axis direction used in the present disclosure does not necessarily have to be the vertical direction and does not have to completely coincide with the vertical direction. Therefore, various structures according to the present disclosure (for example, the structure shown in FIG. 1) are not limited to the "upper" and "lower" in the Z-axis direction described in this specification being the "upper" and "lower" in the vertical direction. For example, the X-axis direction may be the vertical direction, or the Y-axis direction may be the vertical direction.

[0197] [Appendix] The technical ideas that can be grasped from the above-described embodiments and modification examples are described below. Note that the reference numerals of the components of the embodiments corresponding to the components described in each appendix are shown in parentheses. The reference numerals are shown as examples for assisting understanding, and the components described in each appendix should not be limited to the components indicated by the reference numerals.

[0198] (Appendix 1) A semiconductor light-emitting element (30(30A; 30B; 30C; 30D)), A drive circuit (40(40A; 40B; 40C; 40D)) for driving the semiconductor light-emitting element (30), A switching element (411; 412; 413; 414) for controlling the semiconductor light-emitting element (30), A capacitor (421; 422; 423; 424) for supplying current to the semiconductor light-emitting element (30) The drive circuit (40) including the above, A sealing resin (27) in which at least a part of the drive circuit (40) is embedded, A conductive part (28) provided in the sealing resin (27) and constituting a conductive path between the semiconductor light-emitting element (30) and the drive circuit (40), The semiconductor light-emitting element (30) is composed of a light-emitting element that emits light in a direction intersecting the mounting surface of the semiconductor light-emitting element (30). A semiconductor light-emitting device.

[0199] (Appendix 2) The semiconductor light-emitting element (30) is one of a plurality of semiconductor light-emitting elements (30A to 30D) mounted on the mounting surface, and the drive circuit (40) is one of a plurality of drive circuits (40A to 40D) that drive one or more of the plurality of semiconductor light-emitting elements. The semiconductor light-emitting device according to Supplementary Note 1.

[0200] (Supplementary Note 3) The conductive portion (28) includes a first electrode layer (28A) including the mounting surface of the semiconductor light-emitting element (30). The plurality of semiconductor light-emitting elements (30A to 30D) are intensively arranged in a central region (AC) of the first electrode layer (28A). The semiconductor light-emitting device according to Supplementary Note 2.

[0201] (Supplementary Note 4) The plurality of semiconductor light-emitting elements (30A to 30D) are arranged in a matrix adjacent to each other in the central region (AC) of the first electrode layer (28A). The semiconductor light-emitting device according to Supplementary Note 3.

[0202] (Supplementary Note 5) At least one of the switching elements (411; 412; 413; 414) and the capacitors (421; 422; 423; 424) is embedded in the encapsulating resin (27). The semiconductor light-emitting device according to any one of Supplementary Notes 1 to 4.

[0203] (Supplementary Note 6) At least the capacitors (421; 422; 423; 424) of the switching elements (411; 412; 413; 414) and the capacitors (421; 422; 423; 424) are embedded in the encapsulating resin (27). The capacitors (421; 422; 423; 424) are embedded in the encapsulating resin (27) at a position overlapping the semiconductor light-emitting element (30) in plan view. The semiconductor light-emitting device according to Supplementary Note 5.

[0204] (Supplementary Note 7) The semiconductor light-emitting device according to appended claim 5 or 6, wherein both the capacitor (421; 422; 423; 424) and the switching element (411; 412; 413; 414) are embedded at the same layer position within the encapsulating resin (27).

[0205] (Appended claim 8) The capacitor (421; 422; 423; 424) is a silicon capacitor embedded in the encapsulating resin (27), The semiconductor light-emitting device according to any one of appended claims 1 to 7, wherein the switching element (411; 412; 413; 414) is a vertical MOSFET embedded in the encapsulating resin (27).

[0206] (Appended claim 9) The capacitor (421; 422; 423; 424) is a silicon capacitor embedded in the encapsulating resin (27), The semiconductor light-emitting device according to any one of appended claims 1 to 6, wherein the switching element (411; 412; 413; 414) is a nitride semiconductor transistor mounted on the conductive portion (28) exposed from the encapsulating resin (27).

[0207] (Appended claim 10) The capacitor (421; 422; 423; 424) is a ceramic capacitor mounted on the conductive portion (28) exposed from the encapsulating resin (27), The semiconductor light-emitting device according to any one of appended claims 1 to 5, wherein the switching element (411; 412; 413; 414) is a vertical MOSFET embedded in the encapsulating resin (27).

[0208] (Appended claim 11) The semiconductor light-emitting device according to any one of appended claims 1 to 10, wherein the light-emitting element (30) is a photonic crystal surface-emitting laser element or a vertical cavity surface-emitting laser element.

[0209] (Appended claim 12) The capacitor (421; 422; 423; 424) is one of a plurality of capacitors (421 to 424) provided in the drive circuit (40), and is the semiconductor light-emitting device according to any one of Appendices 1 to 11.

[0210] (Appendix 13) The switching element (411; 412; 413; 414) is connected to the semiconductor light-emitting element by a plurality of wires, and is the semiconductor light-emitting device according to any one of Appendices 1 to 12.

[0211] (Appendix 14) The semiconductor light-emitting device according to any one of Appendices 1 to 13, further comprising a gate driver (205A; 205B; 205C; 205D) for driving the switching element (411; 412; 413; 414) in the drive circuit (40).

[0212] (Appendix 15) The semiconductor light-emitting device according to any one of Appendices 1 to 14, further comprising a protection diode (70A; 70B; 70C; 70D) connected in anti-parallel to the semiconductor light-emitting element (30).

[0213] (Appendix 16) The semiconductor light-emitting device according to any one of Appendices 1 to 15, further comprising a reverse current prevention diode (204A; 204B; 204C; 204D) provided between a power input section for supplying current to the semiconductor light-emitting element (30) and the drive circuit (40) and the drive circuit (40).

[0214] (Appendix 17) Both the switching element (411; 412; 413; 414) and the capacitor (421; 422; 423; 424) are embedded in the encapsulating resin (27), The semiconductor light-emitting device further comprises a surface mount package (300) mounted on the conductive portion (28) exposed from the encapsulating resin (27), The surface mount package (300) is A first accommodating portion (301) including a first land (311) and capable of accommodating a mounting member (35) mounted on the first land (311), A second accommodating portion (302) that is connected to the first accommodating portion (301) in a stepped manner and is capable of accommodating the semiconductor light-emitting element (30) mounted on the mounting member (35), the second accommodating portion (302) including an annular second land (312), A first through-conductor (303) that is provided to penetrate within the surface-mount package (300) and has a first end connected to the first land (311) and a second end exposed from the surface-mount package (300), A second through-conductor (304) that is provided to penetrate within the surface-mount package (300) and has a first end connected to the second land (312) and a second end exposed from the surface-mount package (300), The semiconductor light-emitting device according to Supplementary Note 1, including

[0215] (Supplementary Note 18) A semiconductor light-emitting element (30) constituted by an end-face light-emitting element, A drive circuit (40) for driving the semiconductor light-emitting element (30), A switching element (411; 412; 413; 414) for controlling the semiconductor light-emitting element (30), A capacitor (421; 422; 423; 424) for supplying current to the semiconductor light-emitting element (30) The drive circuit (40) including A sealing resin (27) in which a part of the drive circuit (40) is embedded, A conductive portion (28) that is provided on the sealing resin (27) and constitutes a conductive path between the semiconductor light-emitting element (30) and the drive circuit (40), A light reflection element (50) that reflects light emitted from the semiconductor light-emitting element (30) in a direction intersecting the mounting surface of the semiconductor light-emitting element (30) A semiconductor light-emitting device including

[0216] (Supplementary Note 19) The semiconductor light-emitting device according to appended note 18, wherein the light reflection element (50) is a mirror or a diffraction grating.

Explanation of Signs

[0217] 10: Semiconductor light-emitting device 20: Substrate 21: Main surface 22: Back surface 23 - 26: First - fourth side surfaces 27: Encapsulating resin 28A: First electrode layer (surface electrode layer) 28B: Second electrode layer (back - surface electrode layer) 29A: Main - surface resist layer 29B: Back - surface resist layer 30, 30A - 30D: Semiconductor light - emitting elements 31: Surface electrode 32: Back - surface electrode 33: Light - emitting region 35: Mounting member 40, 40A - 40D: Driving circuits 411 - 414: Switching elements 41A: First surface 41B: Second surface 41S: Source electrode 41G: Gate electrode 41D: Drain electrode 421 - 424: Capacitors 42A: First electrode 42B: Second electrode 50: Light reflection element 70A - 70D: Protection diodes 71: Anode electrode 72: Cathode electrode 200: Light - emitting system 201: DC power supply 202: Capacitor 203: DC limiting resistor 204A - 204D: Back - flow prevention diodes 205A - 205D: Gate drivers 206A - 206D: Pulse generators 207A - 207D: Control power supplies 300: Surface Mount Package 301: First Accommodation Portion 302: Second Accommodation Portion 303: First Through Conductor 304: Second Through Conductor 311: First Land 312: Annular Second Land AC: Central Region AP: Peripheral Region AP1: First Peripheral Region AP2: Second Peripheral Region AP3: Third Peripheral Region AP4: Fourth Peripheral Region VC, HC: Virtual Center Line W1: Wire

Claims

1. A semiconductor light-emitting element, A drive circuit for driving the semiconductor light-emitting element, A switching element for controlling the semiconductor light-emitting element, A capacitor for supplying current to the semiconductor light-emitting element, The drive circuit including the above, A sealing resin in which at least a part of the drive circuit is embedded, A conductive portion provided in the sealing resin and constituting a conductive path between the semiconductor light-emitting element and the drive circuit, and The semiconductor light-emitting element is constituted by a light-emitting element that emits light in a direction intersecting the mounting surface of the semiconductor light-emitting element. A semiconductor light-emitting device.

2. The semiconductor light-emitting element is one of a plurality of semiconductor light-emitting elements mounted on the mounting surface, and the drive circuit is one of a plurality of drive circuits that drive one or more of the plurality of semiconductor light-emitting elements. The semiconductor light-emitting device according to Claim 1.

3. The conductive portion includes a first electrode layer including the mounting surface of the semiconductor light-emitting element, The plurality of semiconductor light-emitting elements are intensively arranged in a central region of the first electrode layer. The semiconductor light-emitting device according to Claim 2.

4. The plurality of semiconductor light-emitting elements are arranged in a matrix adjacent to each other in the central region of the first electrode layer. The semiconductor light-emitting device according to Claim 3.

5. At least one of the switching element and the capacitor is embedded in the sealing resin. The semiconductor light-emitting device according to Claim 1.

6. At least the capacitor of the switching element and the capacitor is embedded in the sealing resin, The capacitor is embedded in the sealing resin at a position overlapping the semiconductor light-emitting element in a plan view. The semiconductor light-emitting device according to Claim 5.

7. Both the capacitor and the switching element are embedded at the same layer position in the sealing resin. The semiconductor light-emitting device according to Claim 5.

8. The capacitor is a silicon capacitor embedded in the sealing resin, The switching element is a vertical MOSFET embedded in the sealing resin. The semiconductor light-emitting device according to Claim 1.

9. The capacitor is a silicon capacitor embedded in the sealing resin, The switching element is a nitride semiconductor transistor mounted on the conductive portion exposed from the sealing resin. The semiconductor light-emitting device according to Claim 1.

10. The capacitor is a ceramic capacitor mounted on the conductive portion exposed from the encapsulating resin, The switching element is a vertical MOSFET embedded in the encapsulating resin, The semiconductor light-emitting device according to claim 1.

11. The light-emitting element is a photonic crystal surface-emitting laser element or a vertical cavity surface-emitting laser element, The semiconductor light-emitting device according to claim 1.

12. The capacitor is one of a plurality of capacitors provided in the drive circuit, The semiconductor light-emitting device according to claim 1.

13. The switching element is connected to the semiconductor light-emitting element by a plurality of wires, The semiconductor light-emitting device according to claim 1.

14. The semiconductor light-emitting device according to claim 1, further comprising a gate driver for driving the switching element in the drive circuit.

15. The semiconductor light-emitting device according to claim 1, further comprising a protection diode connected in reverse parallel to the semiconductor light-emitting element.

16. The semiconductor light-emitting device according to claim 1, further comprising a backflow prevention diode provided between a power input section for supplying current to the semiconductor light-emitting element and the drive circuit and the drive circuit.

17. Both the switching element and the capacitor are embedded in the encapsulating resin, The semiconductor light-emitting device further comprises a surface mount package mounted on the conductive portion exposed from the encapsulating resin, The surface mount package is including a first land and a first accommodating portion capable of accommodating a mounting member mounted on the first land, a second accommodating portion that is continuously connected to the first accommodating portion in a stepped manner and is capable of accommodating the semiconductor light-emitting element mounted on the mounting member, the second accommodating portion including an annular second land, a first through-conductor provided to penetrate within the surface mount package and having a first end connected to the first land and a second end exposed from the surface mount package, a second through-conductor provided to penetrate within the surface mount package and having a first end connected to the second land and a second end exposed from the surface mount package, The semiconductor light-emitting device according to claim 1, including.

18. A semiconductor light-emitting element composed of an end-face light-emitting element, a drive circuit for driving the semiconductor light-emitting element, a switching element for controlling the semiconductor light-emitting element, a capacitor for supplying current to the semiconductor light-emitting element The drive circuit including the same, A sealing resin in which a part of the drive circuit is embedded, A conductive portion provided in the sealing resin and constituting a conductive path between the semiconductor light-emitting element and the drive circuit, A light reflection element that reflects the light emitted from the semiconductor light-emitting element in a direction intersecting the mounting surface of the semiconductor light-emitting element A semiconductor light-emitting device comprising the same.

19. The semiconductor light-emitting device according to claim 18, wherein the light reflection element is a mirror or a diffraction grating.

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