Substrate processing apparatus and substrate processing method

Abstract

To enable execution of a processing to two kinds of substrates (a first substrate and a second substrate that is smaller than the first substrate) which are different in size in a plan view by one substrate processing apparatus, and enable execution of lifting to each second substrate independently when lifting two second substrates.SOLUTION: A substrate processing apparatus comprises: a mounting stage that has a mounting surface on which one first substrate and two second substrates are selected and mounted, and a plurality of penetration holes penetrated in a vertical direction at a position not overlapped with a bisector for diving a long side on the mounting surface into two parts, and opens to the mounting surface; a processing chamber where processing for each substrate on the mounting stage is performed; a driving mechanism that includes a plurality of lifting pins that support a substrate from a lower surface side, and a driving part that drives each lifting pin in the vertical direction; and a control part that controls the driving part. In a bottom part of the processing chamber, a plurality of driving insertion holes to which the driving mechanism is inserted are provided, and the plurality of driving insertion holes are overlapped with the plurality of penetration holes.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] A substrate processing apparatus that performs substrate processing such as etching and vapor deposition on a substrate is known (see, for example, Patent Document 1). The substrate processing apparatus described in Patent Document 1 includes a substrate support table that supports two substrates to be processed side by side, and a lift pin assembly including a plurality of lift pins that are installed so as to be vertically movable through the substrate support table. In this substrate processing apparatus, the two substrates on the substrate support table can be lifted and lowered together by the vertical movement of the lift pin assembly.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure can perform processing on two types of substrates (a first substrate and a second substrate smaller than the first substrate) having different sizes in plan view using a single substrate processing apparatus, and can independently perform lifting and lowering for each second substrate when lifting and lowering two second substrates.

Means for Solving the Problems

[0005] One aspect of the technology according to the present disclosure includes a mounting surface on which one first substrate and two second substrates having an area smaller than that of the first substrate in a plan view are selectively placed, and in the plan view of the mounting surface, a plurality of through holes that penetrate vertically and open to the mounting surface at a position that does not overlap with a bisecting line that bisects the long side of the mounting surface. A mounting table having the through holes, a processing chamber in which processing is performed on the first substrate or each of the second substrates on the mounting table, and the mounting table is movable in the vertical direction, inserted into the through holes, and when the first substrate is placed on the mounting surface, the first substrate is supported from the lower surface side, and when two of the second substrates are placed on the mounting surface, a plurality of lifting pins that independently support each of the second substrates from the lower surface side, and a driving mechanism having a driving unit that drives each of the lifting pins in the vertical direction, and a control unit that controls the driving unit, and a plurality of driving insertion holes through which the driving mechanism is inserted are provided at the bottom of the processing chamber, and the plurality of driving insertion holes in the plan view overlap the plurality of through holes, which is a substrate processing apparatus.

Advantages of the Invention

[0006] According to the present disclosure, it is possible to perform processing on two types of substrates (a first substrate and a second substrate smaller than the first substrate) having different sizes in a plan view with one substrate processing apparatus, and when lifting and lowering two second substrates, it is possible to independently perform the lifting and lowering of each second substrate.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Embodiments for Carrying Out the Invention

[0008] As described above, in the technology of Patent Document 1, two substrates on a substrate support table can be lifted and lowered together. On the other hand, there may be a case where it is desired to lift and lower the two substrates on the substrate support table independently. In this case, with the technology of Patent Document 1, independent lifting and lowering of each substrate is impossible. In recent years, substrate processing for two types of substrates (a first substrate and a second substrate smaller than the first substrate) having different sizes in plan view has been required. Also, in the conventional technology, there are some that can perform substrate processing on two second substrates, but substrate processing on one first substrate larger than the second substrate is impossible. Therefore, when attempting to perform substrate processing on the first substrate, it is necessary to separately prepare a substrate processing apparatus capable of performing such substrate processing, which incurs additional capital investment.

[0009] Hereinafter, an embodiment of the technology according to the present disclosure will be described with reference to the drawings. However, the configurations described in the following embodiments are merely examples and are not limited by this configuration. For example, each part included in this configuration can be replaced with any part that can exhibit the same function. Also, any configuration may be added.

[0010] FIG. 1 is a schematic vertical cross-sectional view showing a first state of a substrate processing apparatus according to the present disclosure. FIG. 2 is a schematic vertical cross-sectional view showing a second state of the substrate processing apparatus according to the present disclosure. FIG. 3 is a view (schematic plan view) seen from the direction of arrow A in FIG. 1. FIG. 4 is a view (schematic plan view) seen from the direction of arrow B in FIG. 2. FIG. 5 is a block diagram showing an example of the hardware configuration of the substrate processing apparatus. FIGS. 6 to 9 are block diagrams each showing an example of a control state in the substrate processing apparatus. Note that FIG. 1 is also a cross-section taken along line C-C in FIG. 3. FIG. 2 is also a cross-section taken along line D-D in FIG. 4. Further, hereinafter, for convenience of explanation, the upper side in FIGS. 1 and 2 is referred to as "upper (or above)", and the lower side is referred to as "lower (or below)".

[0011] The substrate processing apparatus 10 shown in FIGS. 1 and 2 is, for example, an apparatus used for manufacturing an organic EL (OLED) panel. This substrate processing apparatus 10 can perform various processes (substrate processing methods) such as dry etching, sputtering, and CVD (chemical vapor deposition) on a glass substrate as a substrate (substrate to be processed) G to be processed. The substrates G that can be processed by the substrate processing apparatus 10 include a first substrate G1 and a second substrate G2. As shown in FIG. 3, the first substrate G1 is a rectangular substrate whose shape in plan view has the left-right direction in FIG. 3 as the long side direction. As shown in FIG. 4, the second substrate G2 is a rectangular substrate whose shape in plan view has the left-right direction in FIG. 4 as the short side direction. The area of this second substrate G2 in plan view is smaller than that of the first substrate G1. In the present embodiment, the length of the long side of the second substrate G2 is the same as the length of the short side of the first substrate G1. Also, the length of the short side of the second substrate G2 is approximately 1 / 2 of the long side of the first substrate G1.

[0012] As shown in FIGS. 1 and 2, the substrate processing apparatus 10 includes a first mounting table 1, a second mounting table 2, a support portion 3, a processing chamber 4, and a drive mechanism 5. Note that the substrate processing apparatus 10 is used by exchanging the first mounting table 1 and the second mounting table 2. Also, as shown in FIGS. 5(a) and 5(b), the substrate processing apparatus 10 includes a voltage application unit 6L and a voltage application unit 6R, a refrigerant supply unit 7L and a refrigerant supply unit 7R, a monitoring unit 8, and a control unit 9.

[0013] As shown in FIG. 1, the first mounting table 1 is composed of a laminate having a plate-shaped base 11 and a first electrostatic adsorption part (first electrostatic chuck) 12 provided on the base 11. The first electrostatic adsorption part 12 has a circuit pattern suitable for electrostatic adsorption to the first substrate G1. The upper surface of the first electrostatic adsorption part 12 forms a rectangle with the left-right direction in FIG. 3 as the long side direction, and functions as a first mounting surface 13 on which one first substrate G1 is mounted. Then, when a voltage is applied from the voltage application part 6L in a state where the first substrate G1 is mounted on the first mounting surface 13, the first electrostatic adsorption part 12 can adsorb the first substrate G1 by electrostatic force. Note that since the voltage application part 6R is not used during the first substrate processing, it is not energized.

[0014] Further, the first mounting table 1 is provided with a first flow path 14 through which a refrigerant (back cooling gas) Q for cooling the first substrate G1 on the first mounting surface 13 passes. The first flow path 14 opens at a plurality of locations on the first mounting surface 13. Thereby, the refrigerant Q that has passed through the first flow path 14 can be supplied between the first mounting surface 13 and the lower surface (back surface) of the first substrate G1. By supplying this refrigerant Q, heat exchange can be performed with the first substrate G1, and thus the temperature of the first substrate G1 can be adjusted. Note that the first flow path 14 is connected to a refrigerant supply part 7L that supplies the refrigerant Q. Note that since the refrigerant supply part 7R is not used during the first substrate processing, the refrigerant Q is not supplied.

[0015] The first mounting table 1 is provided with a plurality of first through holes 15 that penetrate in the vertical direction and open to the first mounting surface 13. In each of the first through holes 15, a lifting pin 52 of a drive mechanism 5 described later is inserted so as to be movable (able to protrude and retract). The lifting pin 52 can support the first substrate G1 from the lower surface side in a state of protruding from the first through hole 15 (refer to the two-dot chain line in FIG. 1). As shown in FIG. 3, in a plan view of the state where the first substrate G1 is placed on the first mounting surface 13, the plurality of first through holes 15 are arranged at positions that do not overlap with the center line O11 of the first substrate G1. The center line O11 is a bisector that bisects the long side of the first substrate G1. Further, in the present embodiment, the center line O11 overlaps, in a plan view, with the center line of the first mounting surface 13, that is, the bisector that bisects the long side of the first mounting surface 13. Note that among the plurality of first through holes 15, there is a first through hole 15 that overlaps with a center line O12 that is orthogonal to the center line O11 in a plan view. The center line O12 is a bisector that bisects the short side of the first substrate G1. The plurality of first through holes 15 are arranged symmetrically with respect to the center line O11 and the center line O12 of the first substrate G1. With such a line-symmetric arrangement, the first substrate G1 can be stably supported from the lower surface side by the lifting pins 52 protruding from the respective first through holes 15. Note that the number of arrangements of the first through holes 15 and the line-symmetric arrangement mode are not limited to those shown in FIG. 3.

[0016] As shown in FIG. 2, the second mounting table 2 is composed of a laminate having a plate-shaped base 21 and a second electrostatic adsorption portion (second electrostatic chuck) 22 provided on the base 21. The second electrostatic adsorption portion 22 has a circuit pattern suitable for electrostatic adsorption to each second substrate G2. The upper surface of the second electrostatic adsorption portion 22 functions as a second mounting surface 23 on which two second substrates G2 are mounted. Thereby, the mounting efficiency (chamfering efficiency) of the substrate G on the second mounting surface 23 is improved compared to the first mounting surface 13. In the present embodiment, the second mounting surface 23 is divided into a second left mounting surface 23L on which one of the two second substrates G2 (hereinafter sometimes referred to as "second substrate G2L") is mounted, and a second right mounting surface 23R on which the other second substrate G2 (hereinafter sometimes referred to as "second substrate G2R") is mounted. Then, when the second substrate G2L is mounted on the second left mounting surface 23L, the second electrostatic adsorption portion 22 can adsorb the second substrate G2L by electrostatic force when a voltage is applied from the voltage application portion 6L. Further, when the second substrate G2R is mounted on the second right mounting surface 23R, the second electrostatic adsorption portion 22 can adsorb the second substrate G2R by electrostatic force when a voltage is applied from the voltage application portion 6R. Thus, the second mounting table 2 can perform adsorption to the second substrate G2L and adsorption to the second substrate G2R individually. Thereby, for example, each adsorption can be performed at different timings.

[0017] Further, the second mounting table 2 is provided with a second flow path (flow path) 24 through which a refrigerant Q for cooling each second substrate G2 on the second mounting surface 23 passes. In the present embodiment, the second flow path 24 is divided into a second flow path 24L through which the refrigerant Q for cooling the second substrate G2L passes and a second flow path 24R through which the refrigerant Q for cooling the second substrate G2R passes. The second flow path 24L opens at a plurality of locations on the second left mounting surface 23L. Thereby, the refrigerant Q that has passed through the second flow path 24L can be supplied between the second left mounting surface 23L and the lower surface of the second substrate G2L. By supplying this refrigerant Q, heat exchange can be performed with the second substrate G2L, and thus the temperature of the second substrate G2L can be adjusted. Similarly, the second flow path 24R opens at a plurality of locations on the second right mounting surface 23R. Thereby, the refrigerant Q that has passed through the second flow path 24R can be supplied between the second right mounting surface 23R and the lower surface of the second substrate G2R. By supplying this refrigerant Q, heat exchange can be performed with the second substrate G2R, and thus the temperature of the second substrate G2R can be adjusted. In this way, the second mounting table 2 can individually perform cooling for the second substrate G2L and cooling for the second substrate G2R. Thereby, for example, each cooling can be performed at different timings. Note that the second flow path 24L is connected to the refrigerant supply unit 7L, and the second flow path 24R is connected to the refrigerant supply unit 7R.

[0018] On the second mounting table 2, a plurality of second through holes (through holes) 25 that penetrate in the vertical direction and open to the second mounting surface 23 are provided. In each second through hole 25, the lifting pin 52 of the drive mechanism 5 is movably inserted. The lifting pin 52 can support each second substrate G2 from the lower surface side in a state of protruding from the second through hole 25 (see the two-dot chain line in FIG. 2). As shown in FIG. 4, in a state where two second substrates G2 are placed side by side on the second mounting surface 23, that is, in a plan view of a state where the second substrate G2L is placed on the second left mounting surface 23L and the second substrate G2R is placed on the second right mounting surface 23R, the plurality of second through holes 25 are arranged at positions that do not overlap between the second substrate G2L and the second substrate G2R. Note that the space between the second substrate G2L and the second substrate G2R is located at a position that overlaps the center line O11 in plan view. The plurality of second through holes 25 are symmetrically arranged with respect to the space (center line O11) between the second substrate G2L and the second substrate G2R.

[0019] Also, the plurality of second through holes 25 that open to the second left mounting surface 23L are symmetrically arranged with respect to the center line O21L of the second substrate G2L. The center line O21L is a bisector that bisects the short side of the second substrate G2L. Further, the plurality of second through holes 25 that open to the second left mounting surface 23L are symmetrically arranged with respect to the center line O22L that is orthogonal to the center line O21L. The center line O22L is a bisector that bisects the long side of the second substrate G2L. Thus, on the second left mounting surface 23L, the plurality of second through holes 25 are arranged in line symmetry. Due to this line-symmetric arrangement, on the second left mounting surface 23L, the second substrate G2L can be stably supported from the lower surface side by the lifting pins 52 protruding from the respective second through holes 25.

[0020] Similarly, the plurality of second through-holes 25 that open to the second right mounting surface 23R are arranged symmetrically with respect to the center line O21R of the second substrate G2R. The center line O21R is a bisector that bisects the short side of the second substrate G2R. Further, the plurality of second through-holes 25 that open to the second right mounting surface 23R are arranged symmetrically with respect to the center line O22R that is orthogonal to the center line O21R. The center line O22R is a bisector that bisects the long side of the second substrate G2R. Thus, on the second right mounting surface 23R, the plurality of second through-holes 25 are arranged in line symmetry. Due to this line-symmetric arrangement, on the second right mounting surface 23R, the second substrate G2R can be stably supported from the lower surface side by the lifting pins 52 protruding from each of the second through-holes 25. Note that the number of arrangements of the second through-holes 25 and the line-symmetric arrangement mode are not limited to those shown in FIG. 4.

[0021] As shown in FIGS. 1 and 2, the support portion 3 is fixed to the bottom portion 41 of the processing chamber 4. The support portion 3 is a support base that supports the first mounting table 1 and the second mounting table 2 in a replaceable manner. Hereinafter, the state in which the first mounting table 1 is supported by the support portion 3 is referred to as the "first state", and the state in which the second mounting table 2 is supported by the support portion 3 is referred to as the "second state".

[0022] The processing chamber 4 has a box shape and ensures airtightness. Inside the processing chamber 4, in the first state, the various processes for the first substrate G1 on the first mounting table 1 are performed, and in the second state, the various processes for each second substrate G2 on the second mounting table 2 are performed.

[0023] At the bottom 41 of the processing chamber 4, a drive mechanism 5 is arranged. In this embodiment, the drive mechanism 5 includes the same number (20) of drive units 51 as the number of the second through-holes 25 arranged. Each drive unit 51 has a lifting pin 52 that is movable in the vertical direction with respect to the support portion 3, and a drive portion 53 that is provided below the lifting pin 52 and drives the lifting pin 52 in the vertical direction. The configuration of the drive portion 53 is not particularly limited, and for example, a configuration having a motor or the like, a configuration having an air cylinder or the like can be used. Further, each drive unit 51 has a first connecting member 54 that is connected to the lower portion of the lifting pin 52 and extends downward, and a second connecting member 55 that is connected to the lower portion of the first connecting member 54 and is located outside the processing chamber 4. The second connecting member 55 is composed of a conductive member 551 that constitutes the upper portion thereof and an insulating member 552 that constitutes the lower portion thereof. Further, each drive unit 51 has a conductive bellows 56 for blocking the vacuum atmosphere and the atmospheric atmosphere. The bellows 56 is located between the lower surface of the first mounting table 1 and the upper surface of the conductive member 551 in the first state, and is located between the lower surface of the second mounting table 2 and the upper surface of the conductive member 551 in the second state. Further, each drive unit 51 has a sliding member 57 provided at the lower portion of the second connecting member 55 and a guide member 58 fixed to the bottom 41 of the processing chamber 4. The sliding member 57 is connected to a linear motion unit (not shown) that combines a ball screw and a motor, and can be lifted up and down in the vertical direction by a drive portion control device (not shown). Further, the sliding member 57 is guided by the guide member 58 when it moves up and down in the vertical direction.

[0024] In the drive mechanism 5 configured as described above, when loading or unloading the substrate G into or from the processing chamber 4, the lifting pins 52 are used. When loading the substrate G into the processing chamber 4, the lifting pins 52 are projected to the uppermost position, and the substrate G from the transfer arm (not shown) can be supported on each of the lifting pins 52 in this state. Then, the lifting pins 52 descend to the initial position (the most lowered state) while supporting the substrate G. Thereby, various processes on the substrate G become possible. Also, when unloading the processed substrate G from the processing chamber 4, the lifting pins 52 are projected to the uppermost position again, and the substrate G is supported on the lifting pins 52. Then, the transfer arm is moved below the substrate G, and the substrate G is transferred to the transfer arm by lowering the lifting pins 52 below the transfer arm, enabling the unloading of the substrate G by the transfer arm.

[0025] A plurality of drive insertion holes 42 through which the lifting pins 52 and the first connecting member 54 of the drive mechanism 5 are inserted are provided in the bottom 41 of the processing chamber 4. Each drive insertion hole 42 is composed of a through hole penetrating the bottom 41 in the vertical direction. As shown in FIG. 3, a plurality of drive insertion holes 42 in plan view (excluding the leftmost drive insertion hole 42 and the rightmost drive insertion hole 42 on the center line O12) overlap with the plurality of first through holes 15 of the first mounting table 1. As shown in FIG. 4, a plurality of drive insertion holes 42 in plan view overlap with the plurality of second through holes 25 of the second mounting table 2. Also, when the first mounting table 1 and the second mounting table 2 are overlapped in plan view, the plurality of first through holes 15 and the plurality of second through holes 25 (excluding one second through hole 25 on the left side of the center line O22L and one second through hole 25 on the right side of the center line O22R) overlap. Due to such a positional relationship between the holes, the lifting pins 52 of the common drive mechanism 5 can be inserted and used for the first mounting table 1 and the second mounting table 2. In the substrate processing apparatus 10, the entire drive mechanism 5 can be disposed, that is, housed, in the processing chamber 4. In this case, the drive insertion holes 42 are omitted from the bottom 41 of the processing chamber 4.

[0026] As described above, the substrate processing apparatus 10 includes a voltage application unit 6L, a voltage application unit 6R, a refrigerant supply unit 7L, a refrigerant supply unit 7R, a monitoring unit 8, and a control unit 9 (see FIGS. 5(a) and 5(b)). The voltage application unit 6L and the voltage application unit 6R apply a voltage in common to the first electrostatic adsorption unit 12 and the second electrostatic adsorption unit 22 by at least one of these voltage application units. In the present embodiment, the voltage application unit 6L includes a combination of a grounded power supply 61L and a circuit unit 62L that switches the ON / OFF of the power supply 61L and the like. Similarly, the voltage application unit 6R includes a combination of a grounded power supply 61R and a circuit unit 62R that switches the ON / OFF of the power supply 61R and the like. When applying a voltage to the first electrostatic adsorption unit 12, one of the two sets of the voltage application unit 6L and the voltage application unit 6R is responsible for the application. Also, when applying a voltage to the second electrostatic adsorption unit 22, each set is responsible for the application. Thereby, electrostatic adsorption to the second substrate G2L and electrostatic adsorption to the second substrate G2R can be performed individually.

[0027] The refrigerant supply unit 7L and the refrigerant supply unit 7R supply the refrigerant Q in common to at least one of the first flow path 14 and the second flow path 24L or the second flow path 24R. The refrigerant Q is not particularly limited, and for example, it is preferable to use an inert gas such as helium, nitrogen, or argon.

[0028] As shown in FIG. 5, the monitoring unit 8 includes ammeters 81L and 81R, pressure gauges 82L and 82R, and flow meters 83L and 83R. This monitoring unit 8 monitors the electrostatic adsorption state (adsorption state) of the first substrate G1 by the first electrostatic adsorption unit 12 and the electrostatic adsorption state of the second substrate G2 by the second electrostatic adsorption unit 22. In the second substrate G2, the electrostatic adsorption states of the second substrate G2L and the second substrate G2R can be monitored individually. Further, the monitoring unit 8 monitors the passage state of the refrigerant Q in the first flow path 14 and the passage state of the refrigerant Q in the second flow path 24. In the second flow path 24, the passage states of the refrigerant Q in the second flow path 24L and the second flow path 24R can be monitored individually. Regarding the monitoring of the electrostatic adsorption state of the first electrostatic adsorption unit 12 and the electrostatic adsorption state of the second electrostatic adsorption unit 22, since they are the same except that the monitoring targets and the ammeters are different, the electrostatic adsorption state of the first electrostatic adsorption unit 12 will be typically described. The ammeter 81L can measure the current value passing through the first electrostatic adsorption unit 12 when a voltage is applied to the first electrostatic adsorption unit 12 in the first state. Then, the monitoring unit 8 can monitor the electrostatic adsorption state of the first electrostatic adsorption unit 12 based on the measurement result by the ammeter 81L, that is, the current value. For example, when the current value is less than the threshold value, it is determined that the electrostatic adsorption state of the first electrostatic adsorption unit 12 is good, and when the current value is greater than or equal to the threshold value, it is determined that the electrostatic adsorption state of the first electrostatic adsorption unit 12 is bad. When it is determined that the electrostatic adsorption state of the first electrostatic adsorption unit 12 is good, the process on the first substrate G1 can be performed. On the other hand, when it is determined that the electrostatic adsorption state of the first electrostatic adsorption unit 12 is bad, a short circuit in the voltage application path including the electrostatic chuck is considered, so the process is aborted, and for example, the replacement of the mounting table is considered. Thereby, the electrostatic adsorption state of the first electrostatic adsorption unit 12 may be improved. Note that the threshold value of the current value is stored in advance in the memory 92 (see FIG. 5) of the control unit 9, for example. Also, the threshold value of the current value is preferably changeable as appropriate.

[0029] Regarding the monitoring of the passing state of the refrigerant Q in the first flow path 14 and the passing state of the refrigerant Q in the second flow path 24, since they are the same except for the monitoring target, the flow meter, and the pressure gauge being different, the passing state of the refrigerant Q in the first flow path 14 will be typically described. The pressure gauge 82L can measure the pressure of the refrigerant Q passing through the first flow path 14 in the first state. Also, the flow meter 83L can measure the flow rate of the refrigerant Q passing through the first flow path 14 in the first state. And the monitoring unit 8 can monitor the passing state of the refrigerant Q in the first flow path 14 based on the measurement result of the pressure gauge 82L, that is, the pressure, and the measurement result of the flow meter 83L, that is, the flow rate. For example, when the pressure is equal to or higher than the threshold value and the flow rate is less than the threshold value, it is determined that the passing state of the refrigerant Q in the first flow path 14 is good. When the pressure is less than the threshold value or the flow rate is equal to or higher than the threshold value, it is determined that the passing state of the refrigerant Q in the first flow path 14 is bad. When it is determined that the passing state of the refrigerant Q in the first flow path 14 is good, processing on the first substrate G1 can be performed. On the other hand, when it is determined that the passing state of the refrigerant Q in the first flow path 14 is bad, for example, it is preferable to first separate the first substrate G1 from the first electrostatic adsorption unit 12 using the lifting pin 52 and then place it on the first electrostatic adsorption unit 12 again. Thereby, the passing state of the refrigerant Q in the first flow path 14 may be improved. Note that the threshold value of the pressure is, for example, pre-stored in the memory 92 of the control unit 9. Also, the threshold value of the pressure is preferably changeable as appropriate. Similarly, the threshold value of the flow rate is also preferably pre-stored in the memory 92 of the control unit 9 and changeable as appropriate. Also, in this embodiment, the determination (monitoring) of whether the passing state of the refrigerant Q in the first flow path 14 is good or bad is based on both the pressure and the flow rate, but it is not limited to this, and it may be based on at least one of the pressure and the flow rate.

[0030] The control unit 9 has a CPU 91 and a memory 92, and is communicably connected to each part of the drive unit 53 of the drive mechanism 5, the voltage application units 6L and 6R, the refrigerant supply units 7L and 7R, and the ammeters 81L and 81R to the flow meters 83L and 83R of the monitoring unit 8, and controls the operations of these parts. Note that control programs and the like are stored in advance in the memory 92. An example of the control state by the control unit 9 will be described with reference to FIGS. 6 to 9. Also, "lifting pin_01" to "lifting pin_20" in FIGS. 6 to 9 are numbers (names) attached to the lifting pins 52 that pass through the drive insertion holes 42 in FIGS. 3 and 4. Here, the lifting pin 52 that passes through the leftmost upper drive insertion hole 42 in FIGS. 3 and 4 is set as "lifting pin_01", and in order toward the lower side, the lifting pin 52 that passes through the rightmost lower drive insertion hole 42 is numbered up to "lifting pin_20". Also, "drive unit_01" to "drive unit_20" are numbers attached to the drive units 53 that move the lifting pins 52 of "lifting pin_01" to "lifting pin_20" up and down.

[0031] As shown in FIG. 6, when raising and lowering the first substrate G1, the control unit 9 can perform control to individually drive each lifting pin 52 with respect to the drive units 53 of "drive unit_01" to "drive unit_02", "drive unit_04" to "drive unit_10", "drive unit_11" to "drive unit_17", and "drive unit_19" to "drive unit_20". Note that the drive units 53 of "drive unit_03" and "drive unit_18" are not used for raising and lowering the first substrate G1. Also, if the drive units 53 of "drive unit_03" and "drive unit_18" are also used for raising and lowering the first substrate G1, the control unit 9 can perform control to collectively drive each lifting pin 52 with respect to the drive units 53 of "drive unit_01" to "drive unit_20".

[0032] As shown in FIG. 7, when raising and lowering the second substrate G2L, the control unit 9 can perform control to drive each lifting pin 52 collectively with respect to the drive units 53 of "drive unit_01" to "drive unit_10". On the other hand, when raising and lowering the second substrate G2R, the control unit 9 can perform control to drive each lifting pin 52 collectively with respect to the drive units 53 of "drive unit_11" to "drive unit_20". In this way, the control unit 9 can group the drive units 53 for each second substrate G2 and drive each lifting pin 52 collectively. Note that "drive unit_01" to "drive unit_10" and "drive unit_11" to "drive unit_20" are respectively grouped into one in group 1A. And by such control, the second substrate G2L and the second substrate G2R can be raised and lowered as different group 1As independently. For example, if it is determined that the electrostatic adsorption state for the second substrate G2L is good and the electrostatic adsorption state for the second substrate G2R is poor among the second substrate G2L and the second substrate G2R, it is preferable to temporarily stop the processing for both second substrates G2. In this case, it is preferable to leave the second substrate G2L as it is, separate the second substrate G2R from the second right mounting surface 23R with the lifting pin 52 once, and then mount it on the second right mounting surface 23R again. Thereby, the electrostatic adsorption state for the second substrate G2R is improved, and as a result, the processing for both second substrates G2 becomes possible.

[0033] As shown in FIG. 8, when raising and lowering the second substrate G2L, similar to FIG. 7, the control unit 9 can perform control to drive each lifting pin 52 as a group 1A collectively with respect to the drive units 53 of "drive unit_01" to "drive unit_10". On the other hand, when raising and lowering the second substrate G2R, the control unit 9 can perform control to drive each lifting pin 52 collectively with respect to the drive units 53 of "drive unit_11" and "drive unit_12". Further, the control unit 9 can perform control to drive each lifting pin 52 collectively with respect to the drive units 53 of "drive unit_13" and "drive unit_14". Similarly, the control unit 9 can perform control with respect to the drive units 53 of "drive unit_15" and "drive unit_16", control with respect to the drive units 53 of "drive unit_17" and "drive unit_18", and control with respect to the drive units 53 of "drive unit_19" and "drive unit_20". Note that "drive unit_11" and "drive unit_12" are grouped together as one in group 1B. "Drive unit_13" and "drive unit_14" are grouped together as one in group 2B. "Drive unit_15" and "drive unit_16" are grouped together as one in group 3B. "Drive unit_17" and "drive unit_18" are grouped together as one in group 4B. "Drive unit_19" and "drive unit_20" are grouped together as one in group 5B. In this way, the control unit 9 can change the group of the lifting pins 52 used for the lifting (support) of the second substrate G2 and drive it for each second substrate G2. Thereby, the second substrate G2L and the second substrate G2R can be lifted and lowered independently and with different numbers of groups. Also, it is possible to set different conditions for each group, for example, the height and speed of the lifting pin 52 at the time of protrusion and retraction.

[0034] As shown in FIG. 9, when raising and lowering the second substrate G2L and the second substrate G2R, the control unit 9 can perform control to drive each lifting pin 52 individually with respect to the drive units 53 of "drive unit_01" to "drive unit_20".

[0035] In the substrate processing apparatus 10 configured as described above, when performing processing on the first substrate G1 and the second substrate G2, the processing can be executed with one substrate processing apparatus 10 by exchanging the first mounting table 1 for the first substrate G1 and the second mounting table 2 for the second substrate G2. Further, when it becomes necessary to raise and lower each second substrate G2 when performing processing on two second substrates G2, the raising and lowering of each second substrate G2 can be executed independently by the control of the control unit 9 described above. Also, when it becomes necessary to more finely divide the raising and lowering groups when performing processing on two second substrates G2, the raising and lowering of each second substrate G2 can be executed independently by the control of the control unit 9 described above. Thereby, for example, it is possible to eliminate the defect in the electrostatic adsorption state. Note that the grouping is not limited to that of the present embodiment.

[0036] As described above, the preferred embodiments of the present disclosure have been described. However, the present disclosure is not limited to the above-described embodiments, and various modifications and changes are possible within the scope of the gist thereof.

Explanation of Reference Numerals

[0037] 1 First mounting table 13 First mounting surface 15 First through hole 2 Second mounting table 23 Second mounting surface 25 Second through hole 3 Support portion 4 Processing chamber 41 Bottom 42 Driving insertion hole 5 Driving mechanism 52 Lifting pin 53 Driving portion 9 Control unit 10 Substrate processing apparatus 20 Mounting table 203 Mounting surface O11 Center line G1 First substrate G2 Second substrate

Claims

1. A mounting table having: one first substrate; a mounting surface on which two second substrates, each having a smaller area than the first substrate in plan view, are selectively placed; and a plurality of through-holes that penetrate vertically and open to the mounting surface at a position that does not overlap with a bisector that bisects the long side of the mounting surface in plan view. A processing chamber in which processing is performed on the first substrate or each of the second substrates on the mounting table. A driving mechanism that is movable in the vertical direction with respect to the mounting table, is inserted into the through-holes, and supports the first substrate from the lower surface side when the first substrate is placed on the mounting surface, and supports each of the second substrates independently from the lower surface side when the two second substrates are placed on the mounting surface, and a driving unit that drives each of the lifting pins in the vertical direction. A control unit that controls the driving unit. A plurality of driving insertion holes through which the driving mechanism is inserted are provided at the bottom of the processing chamber. A substrate processing apparatus in which, in plan view, the plurality of driving insertion holes overlap the plurality of through-holes.

2. The substrate processing apparatus according to claim 1, wherein the plurality of through-holes are arranged symmetrically with respect to the bisector.

3. The mounting table has an electrostatic adsorption unit that can adsorb the first substrate by electrostatic force when the first substrate is placed on the mounting surface, and can adsorb each of the second substrates by electrostatic force when the two second substrates are placed on the mounting surface. The substrate processing apparatus according to claim 1.

4. The substrate processing apparatus according to claim 3, further comprising a monitoring unit that monitors the adsorption state of the electrostatic adsorption unit.

5. The mounting table has a flow path through which a refrigerant that cools the first substrate when the first substrate is placed on the mounting surface and cools each of the second substrates when the two second substrates are placed on the mounting surface passes. The substrate processing apparatus according to claim 1.

6. A first mounting table having: a first mounting surface on which one first substrate is placed; and a plurality of first through-holes that penetrate vertically and open to the first mounting surface at a position that does not overlap with a bisector that bisects the long side of the first substrate in plan view of the state where the first substrate is placed on the first mounting surface. A second mounting surface on which two second substrates having an area smaller than that of the first substrate in plan view are mounted, and in a plan view of a state where the two second substrates are mounted side by side on the second mounting surface, a plurality of second through holes that penetrate in the vertical direction and open to the second mounting surface at positions that do not overlap between the two second substrates; a second mounting table having, A support portion that supports the first mounting table and the second mounting table in a replaceable manner, In a first state where the first mounting table is supported by the support portion, processing on the first substrate on the first mounting table is performed, and in a second state where the second mounting table is supported by the support portion, a processing chamber in which processing on each of the second substrates on the second mounting table is performed, A plurality of lifting pins that are movable in the vertical direction with respect to the support portion, are inserted into the first through holes in the first state to support the first substrate from the lower surface side, and are inserted into the second through holes in the second state to support each of the second substrates independently from the lower surface side; and a driving portion that drives each of the lifting pins in the vertical direction, A control portion that controls the driving portion, At the bottom of the processing chamber, a plurality of driving insertion holes through which the driving mechanism is inserted are provided, In a plan view, the plurality of driving insertion holes overlap with the plurality of first through holes in the first state and overlap with the plurality of second through holes in the second state, a substrate processing apparatus.

7. The substrate processing apparatus according to claim 1 or 6, wherein the control portion is capable of controlling the driving portion to drive each of the lifting pins individually.

8. The substrate processing apparatus according to claim 6, wherein the control portion is capable of controlling the driving portion to drive all of the lifting pins collectively in the first state.

9. The substrate processing apparatus according to claim 6, wherein the control portion is capable of controlling the driving portion to drive all of the lifting pins collectively for each of the second substrates in the second state.

10. The substrate processing apparatus according to claim 6, wherein the control portion is capable of controlling the driving portion to change and drive a group of the lifting pins used for supporting the second substrate for each of the second substrates in the second state.

11. The substrate processing apparatus according to claim 6, wherein the plurality of first through holes are arranged symmetrically with respect to the bisector.

12. The substrate processing apparatus according to claim 6, wherein the plurality of second through holes are arranged symmetrically with respect to between the two second substrates.

13. The substrate processing apparatus according to claim 12, wherein the plurality of second through holes are symmetrically arranged with respect to the center line of the second substrate for each second substrate.

14. The substrate processing apparatus according to claim 6, wherein when the first mounting table and the second mounting table are overlapped in a plan view, the plurality of first through holes and the plurality of second through holes overlap each other.

15. The substrate processing apparatus according to claim 6, wherein the second mounting surface is divided into a surface on which one of the two second substrates is mounted and a surface on which the other second substrate is mounted.

16. The first mounting table has a first electrostatic adsorption portion capable of adsorbing the first substrate by electrostatic force on the first mounting surface, The substrate processing apparatus according to claim 6, wherein the second mounting table has a second electrostatic adsorption portion capable of adsorbing each second substrate by electrostatic force on the second mounting surface.

17. The second mounting surface is divided into a surface on which one of the two second substrates is mounted and a surface on which the other second substrate is mounted, The substrate processing apparatus according to claim 16, wherein the second mounting table can individually perform adsorption by electrostatic force on the surface on which one of the second substrates is mounted and adsorption by electrostatic force on the surface on which the other second substrate is mounted.

18. The substrate processing apparatus according to claim 16, further comprising a voltage application unit that commonly applies a voltage to the first electrostatic adsorption portion and at least one of the second electrostatic adsorption portions.

19. The substrate processing apparatus according to claim 16, further comprising a monitoring unit that monitors the adsorption states of the first electrostatic adsorption portion and the second electrostatic adsorption portion.

20. The substrate processing apparatus according to claim 19, wherein the monitoring unit monitors the adsorption state based on a current value.

21. The first mounting table has a first flow path through which a refrigerant for cooling the first substrate on the first mounting surface passes, The substrate processing apparatus according to claim 6, wherein the second mounting table individually has a second flow path through which a refrigerant for cooling one of the second substrates on the second mounting surface passes and a second flow path through which a refrigerant for cooling the other second substrate passes.

22. The substrate processing apparatus according to claim 21, further comprising a refrigerant supply unit that commonly supplies a refrigerant to the first flow path and at least one of the second flow paths.

23. The substrate processing apparatus according to claim 21, further comprising a monitoring unit that monitors the passage state of the refrigerant in the first flow path and the second flow path.

24. The substrate processing apparatus according to claim 23, wherein the monitoring unit monitors the passing state based on at least one of the pressure of the refrigerant and the flow rate of the refrigerant.

25. A mounting surface on which one first substrate and two second substrates having a smaller area in plan view than the first substrate are selected and mounted, and a plurality of through holes that penetrate in the vertical direction and open to the mounting surface at a position that does not overlap with a bisecting line that bisects the long side of the mounting surface in plan view of the mounting surface, and a mounting table having the same; A processing chamber in which processing is performed on the first substrate or each of the second substrates on the mounting table; A driving mechanism that is movable in the vertical direction with respect to the mounting table, is inserted into the through hole, supports the first substrate from the lower surface side when the first substrate is mounted on the mounting table, and supports each of the second substrates independently from the lower surface side when two second substrates are mounted on the mounting table. A plurality of lifting pins, and a driving unit that drives each of the lifting pins in the vertical direction; A control unit that controls the driving unit; A plurality of driving insertion holes through which the driving mechanism is inserted are provided at the bottom of the processing chamber; A substrate processing method using a substrate processing apparatus in which a plurality of the driving insertion holes in plan view overlap with a plurality of the through holes.

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