Mounting device

Abstract

To provide a mounting device that can restrain temperature variation when an integrated package having non-uniform thermal conductivity is heated, and can restrain connection failure of the integrated package to a substrate.SOLUTION: A mounting device includes a stage 10 on which at least one of an integrated package β and a substrate α is mounted, a pressing unit 23 for pressing the substrate α and the integrated package β, at least one of a first heater 12 and a second heater 26 that heat the substrate α and the integrated package β, and at least one of a first attachment 13 and a second attachment 26 that contacts either the substrate α or the integrated package β. The first attachment 13 and the second attachment 26 have a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated package β in a moving direction of the pressing unit 23.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a mounting device for mounting an integrated package on a substrate.

Background Art

[0002] A mounting device for mounting a semiconductor chip on a substrate is known. The mounting device arranges a semiconductor chip at a predetermined position of the substrate on a stage, and connects the semiconductor chip to the substrate by pressing the semiconductor chip against the substrate in a state where bumps of the semiconductor chip are melted by heat.

[0003] In such a mounting device, when connecting the semiconductor chip to the substrate, if the temperature distribution of the heated semiconductor chip is non-uniform, the bumps of the semiconductor chip will have variations in the molten state. As a result, the semiconductor chip may have a poor connection to the substrate, or the gap between the semiconductor chip and the substrate may become non-uniform, and it may not operate properly. Therefore, a mounting device that suppresses poor connection between the substrate and the semiconductor chip, non-uniformity of the gap between the substrate and the semiconductor chip, etc. is known.

[0004] The mounting device (semiconductor manufacturing device) described in Patent Document 1 has a bonding head for mounting the semiconductor chip on the substrate, an attachment provided on the bonding head for sucking the semiconductor chip, and a heating unit for heating the attachment. The heating unit has a first heating area and a second heating area surrounding the first heating area in the horizontal direction. The mounting device makes the temperature distribution of the semiconductor chip uniform by independently controlling the temperatures of the first heating area and the second heating area.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] The mounting device described in Patent Document 1 makes the temperature distribution of the semiconductor chip uniform by setting the heating temperature of a second heating area that heats a peripheral portion of the semiconductor chip where the temperature is likely to decrease due to heat dissipation to be higher than the heating temperature of a first heating area that heats the central portion of the semiconductor chip. However, in an integrated package in which a plurality of different semiconductor chips are molded with resin, an integrated portion of the semiconductor chips having a high thermal conductivity and a resin portion having a lower thermal conductivity than the integrated portion of the semiconductor chips are unevenly located in the integrated package. That is, the integrated package has a more complex distribution of thermal conductivity than a single semiconductor chip. Therefore, in the mounting device described in Patent Document 1, it has sometimes been difficult to perform uniform heating for suppressing connection failures between the substrate and the integrated package, unevenness in the gap between the substrate and the integrated package, and the like.

[0007] An object of the present invention is to provide a mounting device capable of suppressing variations in temperature when heating an integrated package having non-uniform thermal conductivity and suppressing connection failures of the integrated package with respect to a substrate.

Means for Solving the Problems

[0008] The inventor of the present invention studied the configuration of a mounting device capable of suppressing variations in temperature when heating an integrated package having non-uniform thermal conductivity and suppressing connection failures of the integrated package with respect to a substrate. As a result of intensive studies, the inventor of the present invention conceived the following configuration.

[0009] The mounting device according to an embodiment of the present invention includes a stage on which at least one of an integrated package in which a plurality of semiconductor chips are integrated and molded and a substrate on which the integrated package is mounted is mounted, a pressing unit that is disposed to face the stage, relatively moves toward the stage, and presses the substrate and the integrated package, at least one of a first heating unit that is supported by the stage and heats the substrate and the integrated package, and a second heating unit that is supported by the pressing unit and heats the substrate and the integrated package, and at least one of a first attachment that is supported by the stage and contacts one of the substrate and the integrated package from the moving direction of the pressing unit, and a second attachment that is supported by the pressing unit and contacts the other of the substrate and the integrated package from the moving direction of the pressing unit.

[0010] The first attachment and the second attachment have a distribution of the pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity that is the thermal conductivity of the integrated package in the pressing direction of the pressing unit.

[0011] In the above configuration, the first attachment and the second attachment have a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated package. The first attachment and the second attachment are configured such that, for example, the pressing direction thermal conductivity of a portion that contacts a portion of the integrated package where the pressing direction thermal conductivity is lower than other portions is higher than that of the other portions. Also, the first attachment and the second attachment are configured such that, for example, the pressing direction thermal conductivity of a portion that contacts a portion of the integrated package where the pressing direction thermal conductivity is higher than other portions is lower than that of the other portions. Therefore, the first attachment and the second attachment distribute the heat of the heating unit to each part of the integrated package according to the distribution of the pressing direction thermal conductivity of the integrated package. Thus, the mounting device adjusts at least one of the ease of heat transfer to the integrated package and the ease of heat escape from the integrated package by the first attachment and the second attachment. Thereby, it is possible to suppress the variation in temperature when uniformly heating an integrated package with non-uniform thermal conductivity and suppress the connection failure of the integrated package to the substrate.

[0012] From another perspective, it is preferable that the mounting device of the present invention includes the following configuration. When the first attachment and the second attachment contact the substrate, in the pressing direction, the pressing direction thermal conductivity of the portion that overlaps the portion of the integrated package where the pressing direction thermal conductivity is the highest becomes the highest, and the pressing direction thermal conductivity of the portion that overlaps the portion of the integrated package where the pressing direction thermal conductivity is the lowest becomes the lowest. When contacting the integrated package, in the pressing direction, the pressing direction thermal conductivity of the portion that overlaps the portion of the integrated package where the pressing direction thermal conductivity is the highest becomes the lowest, and the pressing direction thermal conductivity of the portion that overlaps the portion of the integrated package where the pressing direction thermal conductivity is the lowest becomes the highest.

[0013] In the above configuration, when the first attachment and the second attachment come into contact with the substrate, by making the pressing direction thermal conductivity of the portion where they overlap with the portion of the integrated package having a higher pressing direction thermal conductivity than other portions higher than that of other portions, it is possible to conduct the heat amount that can be melted to the bumps located in the portion of the integrated package having a higher pressing direction thermal conductivity than other portions. Further, the first attachment and the second attachment make the pressing direction thermal conductivity of the portion where they overlap with the portion of the integrated package having a lower pressing direction thermal conductivity than other portions lower than that of other portions, so that heat is less likely to be stored in the portion of the integrated package having a lower pressing direction thermal conductivity than other portions, and thus the temperature of the integrated package can be suppressed within the allowable temperature range.

[0014] When the first attachment and the second attachment come into contact with the integrated package, by making the pressing direction thermal conductivity of the portion where they overlap with the portion of the integrated package having a higher pressing direction thermal conductivity than other portions lower than that of other portions, it is possible to suppress the heat amount conducted to the portion of the integrated package having a higher pressing direction thermal conductivity than other portions from being conducted to the outside through the attachment. Further, the first attachment and the second attachment make the pressing direction thermal conductivity of the portion where they overlap with the portion of the integrated package having a lower pressing direction thermal conductivity than other portions higher than that of other portions, so that a part of the heat stored in the portion of the integrated package having a lower pressing direction thermal conductivity than other portions is likely to be radiated to the outside, and thus the temperature of the integrated package can be suppressed within the allowable temperature range. Thereby, the temperature variation when heating an integrated package with non-uniform thermal conductivity can be suppressed, and the connection failure of the integrated package to the substrate can be suppressed.

[0015] From another perspective, the implementation device of the present invention preferably includes the following configuration. The first attachment changes the pressing direction thermal conductivity at any position by changing at least one of the ratio of the contact area per unit area between the substrate or the integrated package and the first heating part at any position in the portion overlapping the integrated package when viewed in the pressing direction. The second attachment changes the pressing direction thermal conductivity at any position by changing at least one of the ratio of the contact area per unit area between the substrate or the integrated package and the second heating part at any position in the portion overlapping the integrated package when viewed in the pressing direction.

[0016] In the above configuration, the first attachment and the second attachment can arbitrarily change the pressing direction thermal conductivity between the first attachment and the second attachment and at least one of the substrate, the integrated package, and the heating part by changing the ratio of the contact area per unit area between at least one of the substrate, the integrated package, and the heating part. The pressing direction thermal conductivities of the first attachment and the second attachment decrease in proportion to the ratio of the contact area per unit area between at least one of the substrate, the integrated package, and the heating part. The first attachment and the second attachment arbitrarily change the pressing direction thermal conductivity based on the pressing direction thermal conductivity of the integrated package, so as to distribute the heat of the heating part to each part of the substrate and the integrated package. Thereby, it is possible to suppress the temperature variation when heating an integrated package with non-uniform thermal conductivity and suppress the connection failure of the integrated package to the substrate.

[0017] From another perspective, it is preferable that the mounting device of the present invention includes the following configuration. The first attachment changes the pressing direction thermal conductivity at an arbitrary position by changing at least one of the surface treatment of the contact portion between the substrate or the integrated package and the first heating portion at an arbitrary position in a portion overlapping the integrated package when viewed in the pressing direction. The second attachment changes the pressing direction thermal conductivity at an arbitrary position by changing at least one of the surface treatment of the contact portion between the substrate or the integrated package and the second heating portion at an arbitrary position in a portion overlapping the integrated package when viewed in the pressing direction.

[0018] In the above configuration, the first attachment and the second attachment can arbitrarily change the pressing direction thermal conductivity between the first attachment and the second attachment and at least one of the substrate, the integrated package, and the heating portion by changing the surface treatment of the portion in contact with at least one of the substrate, the integrated package, and the heating portion. The pressing direction thermal conductivity of the first attachment and the second attachment varies depending on the surface roughness of the contact surface, surface treatment, etc. The first attachment and the second attachment arbitrarily change the pressing direction thermal conductivity based on the pressing direction thermal conductivity of the integrated package, thereby distributing the heat of the heating portion to each part of the substrate and the integrated package. Thereby, the temperature variation when heating an integrated package with non-uniform thermal conductivity can be suppressed, and the connection failure of the integrated package to the substrate can be suppressed.

[0019] From another perspective, it is preferable that the mounting device of the present invention includes the following configuration. The first attachment changes the pressing direction thermal conductivity at any position by changing at least one of the material of the contact portion between the substrate or the integrated package and the first heating portion at any position in the portion overlapping the integrated package when viewed in the pressing direction. The second attachment changes the pressing direction thermal conductivity at any position by changing at least one of the material of the contact portion between the substrate or the integrated package and the second heating portion at any position in the portion overlapping the integrated package when viewed in the pressing direction.

[0020] In the above configuration, the first attachment and the second attachment are configured with materials having different thermal conductivities for the portions in contact with at least one of the substrate, the integrated package, and the heating portion, so that the pressing direction thermal conductivity of the portions of the first attachment and the second attachment in contact with at least one of the substrate, the integrated package, and the heating portion can be arbitrarily changed. Based on the pressing direction thermal conductivity of the integrated package, the first attachment and the second attachment arbitrarily change the pressing direction thermal conductivity to distribute the heat of the heating portion to each part of the substrate and the integrated package. Thereby, the variation in temperature when heating an integrated package with non-uniform thermal conductivity can be suppressed, and the connection failure of the integrated package to the substrate can be suppressed.

[0021] From another perspective, it is preferable that the mounting device of the present invention includes the following configuration. The mounting device includes a first heating portion and a second heating portion, a first attachment and a second attachment. The stage supports the first heating portion and the first attachment. The first heating portion heats the substrate through the first attachment. The pressing portion supports the second heating portion and the second attachment. The second heating portion heats the integrated package through the second attachment.

[0022] In the above configuration, the mounting device conducts the heat of the first heating unit to the substrate through the first attachment, and conducts the heat of the second heating unit to the integrated package through the second attachment. Based on the heat transfer method by heating and the heat transfer method by heat dissipation of the substrate and the mounting package, the heat of the first heating unit and the heat of the second heating unit are distributed to each part of the heat of the substrate and the integrated package on the substrate and the integrated package. Thereby, it is possible to suppress the variation in temperature when heating an integrated package with non-uniform thermal conductivity, and to suppress the connection failure of the integrated package to the substrate.

[0023] From another aspect, it is preferable that the mounting device of the present invention includes the following configuration. The heating unit has a plurality of heating regions that can be independently temperature-controlled. The heating unit is configured to be able to change the temperatures of the plurality of heating regions based on the distribution of the thermal conductivity in the pressing direction of the integrated package.

[0024] In the above configuration, in addition to the heat distribution of the heating unit by the attachment, the mounting device adjusts the temperatures of the substrate and the integrated package by changing the heating temperature of the heating unit based on the thermal conductivity in the pressing direction of the integrated package. Thereby, it is possible to suppress the variation in temperature when heating an integrated package with non-uniform thermal conductivity, and to suppress the connection failure of the integrated package to the substrate.

[0025] The technical terms used in this specification are used only for the purpose of defining specific embodiments, and are not intended to limit the invention by the technical terms.

[0026] As used herein, the use of "including", "comprising", "having" and their variations specify the presence of the stated features, steps, operations, elements, components, and / or their equivalents, but can include one or more of steps, actions, elements, components, and / or groups thereof.

[0027] As used herein, "attached", "connected", "coupled", and / or their equivalents are used in a broad sense and include both "direct and indirect" attachment, connection and coupling. Further, "connected" and "coupled" are not limited to physical or mechanical connections or couplings, and can include direct or indirect electrical connections or couplings.

[0028] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0029] [Integrated Package] As used herein, an integrated package means a single package in which a plurality of semiconductor chips are integrated and molded on a package substrate. The integrated package includes a 2.5D integrated package in which two or more active semiconductor chips are arranged side by side on a silicon interposer (or organic interposer) with wiring processed on a silicon substrate, and a 3D integrated package in which two or more active semiconductor chips are integrated by die stacking. The integrated package is a package in which an integrated circuit formed by heterogeneous integration is resin-molded. Note that a configuration in which a plurality of semiconductor chips are connected by a silicon bridge of the package substrate may also be used. Further, in the following embodiments, the integrated package may have any structure as long as it is a single package in which a plurality of semiconductor chips are integrated and molded.

[0030] [Substrate] In this specification, the substrate means a substrate such as a wiring board made of materials such as silicon, ceramics, and resin on which a wiring board is patterned for mounting an integrated package. The substrate has wiring made of a conductor. The integrated circuit and the resin substrate are connected by welding bumps which are protruding connection electrodes.

[0031] [Thermal conductivity in the pressing direction of the integrated package] In this specification, the thermal conductivity in the pressing direction of the integrated package means the average thermal conductivity per unit area in the pressing direction by the pressing part of the mounting device in the stacking direction of the semiconductor chip and the silicon interposer in the integrated package. Since a plurality of silicon semiconductor chips are unevenly integrated in the integrated package, when viewed in the pressing direction, it is different between the part where the semiconductor chips are stacked and the part with only the silicon interposer. Therefore, the thermal conductivity in the pressing direction of the integrated package is unevenly distributed based on the shape and stacking direction of the semiconductor chips of the integrated package when viewed in the pressing direction. In the following embodiments, the distribution of the thermal conductivity in the pressing direction of the integrated package has been specified in advance by experiments, analysis, etc.

[0032] [Distribution of thermal conductivity in the pressing direction] In the following embodiments, the distribution of the thermal conductivity in the pressing direction means the position, size, and range of the region where the portion where the thermal conductivity in the pressing direction is included within a certain range is regarded as a region having the thermal conductivity in the pressing direction of the average value of the certain range. In the following embodiments, in the entire region of the integrated package viewed from the pressing direction, there are a plurality of regions having the thermal conductivity in the pressing direction of the average value of different certain ranges. In the integrated package in this embodiment, regions having the thermal conductivity in the pressing direction of the average value of different certain ranges based on the structure of the integrated package in the pressing direction are distributed in a plurality in the region of the integrated package viewed in the pressing direction.

[0033] [Pressing direction] In the following embodiments, the pressing direction includes not only the direction in which the integrated package is pressed by the pressing portion that presses the integrated package, but also the direction of the reaction force of the force applied to the integrated package by the pressing portion. In the following embodiments, the pressing direction is the mounting direction of the integrated package mounted on the substrate.

Advantages of the Invention

[0034] According to an embodiment of the present invention, the mounting device uses an attachment having a distribution of the pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity, which is the thermal conductivity of the integrated package in the moving direction of the pressing portion, to uniformly heat an integrated package with non-uniform thermal conductivity and suppress connection failures.

Brief Description of the Drawings

[0035]

Figure 1

Figure 2

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Figure 17

[0036] Hereinafter, the mounting device according to the present invention will be described with reference to the drawings. In each figure, the same reference numerals are assigned to the same parts, and the description of the same parts will not be repeated. The dimensions of the components in each figure do not faithfully represent the actual dimensions of the components and the dimensional ratios of the components. In the following description of the embodiments of the present invention, the X direction and the Y direction are assumed to be directions on a horizontal plane. The Y direction is a direction orthogonal to the X direction. The Z direction is a direction orthogonal to the X direction and the Y direction. In the present embodiment, the Z direction is defined as the vertical direction. However, this definition of the direction is not intended to limit the orientation of the positioning device during use in each embodiment.

[0037] Also, in the following description, expressions such as "fix", "connect", "join", and "attach" (hereinafter referred to as "fixing, etc.") include not only cases where members are directly fixed, etc., but also cases where they are fixed, etc. via other members. That is, in the following description, the expressions of fixing, etc. include the meanings of direct and indirect fixing, etc. between members.

[0038] [Embodiment 1] <Configuration of Mounting Device 1> With reference to FIGS. 1 and 2, a mounting device 1 which is Embodiment 1 of the mounting device according to the present invention will be described. FIG. 1 is an overall configuration diagram of the mounting device 1 in Embodiment 1 of the present invention, the mounting device 1A in Modification 1 of Embodiment 1, and the mounting device 1B in Modification 2 of Embodiment 1. FIG. 2 is a control block diagram of the mounting device 1, the mounting device 1A, and the mounting device 1B.

[0039] As shown in FIGS. 1 and 2, the mounting device 1 mounts an integrated package β on a substrate α. The mounting device 1 is provided in a manufacturing device such as a semiconductor manufacturing device (not shown). The mounting device 1 includes a stage unit 10, a pickup unit 20, and a control device 30.

[0040] The stage unit 10 is a movable stage for positioning the substrate α at an arbitrary position on the XY plane. The stage unit 10 is supported by a frame (not shown). The stage unit 10 is arranged with the stage mounting surface 10a facing in the Z direction. The stage unit 10 has a stage driving device 11. The stage unit 10 is configured to be movable to an arbitrary position on the XY plane by the stage driving device 11 with the stage mounting surface 10a. The stage unit 10 supports a first heater 12 which is a first heating unit and a first attachment 13.

[0041] The first heater 12 which is a first heating unit heats the substrate α via the first attachment 13. The first heater 12 is, for example, a pulse heater having a ceramic housing. Note that the first heater 12 includes a heater of a laser heating method that heats by a laser or the like. The first heater 12 is configured to be able to rapidly raise the temperature to a preset first temperature. The first heater 12 is fixed to the stage mounting surface 10a of the stage unit 10. The first heater 12 is arranged with the heating surface facing in the Z direction. The first heater 12 is configured to be movable integrally with the stage unit 10. The heat transfer amount per unit area on the heating surface of the first heater 12 is equal at all positions. That is, the first heater 12 heats the entire surface of the heating surface equally.

[0042] The first attachment 13 holds the substrate α. The first attachment 13 is constituted by, for example, a rectangular parallelepiped made of metal. The first attachment 13 is fixed to the heating surface of the first heater 12 in a detachable state. The first attachment 13 is arranged with the first attachment holding surface 13a for holding the substrate α facing in the Z direction. The first attachment 13 has a plurality of suction holes (not shown) on the first attachment holding surface 13a. The first attachment 13 is configured to be able to suck the suction holes by a suction device (not shown). The first attachment 13 is configured to be able to adsorb and hold the substrate α on the first attachment holding surface 13a by the suction force generated in the suction holes. The first attachment 13 is configured to be movable integrally with the first heater 12 by the stage unit 10. Further, the first attachment 13 is heated by the first heater 12.

[0043] The pickup unit 20 is a unit that positions the integrated package β at an arbitrary position on the XY plane. The pickup unit 20 is supported by a frame (not shown). The pickup unit 20 is arranged with the pickup unit mounting surface 20a facing the first attachment 13. The pickup unit 20 has a pickup unit drive device 21. The pickup unit 20 is configured to be movable to an arbitrary position on the XY plane by the pickup unit drive device 21. The pickup unit 20 is provided with a camera 22 for measuring the positions of the substrate α and the integrated package β. The pickup unit 20 supports a pressing unit 23 and a second attachment 25.

[0044] The pressing unit 23, which is a pressing part, is a unit that moves the integrated package β in the Z direction. The pressing unit 23 is fixed to the pick-up unit mounting surface 20a. The pressing unit 23 is arranged such that the pressing unit mounting surface 23a faces the first attachment 13. The pressing unit 23 is configured to be movable to an arbitrary position in the Z direction by a pressing unit driving device 24 on the pressing unit mounting surface 23a. Also, the pressing unit 23 is configured to be able to press the pressing unit mounting surface 23a against an object with a predetermined force by the pressing unit driving device 24. Also, the pressing unit 23 is configured to be movable integrally with the pick-up unit 20. That is, the pressing unit 23 is configured to be able to place the integrated package β at an arbitrary position on the substrate α and press it.

[0045] The second attachment 25 holds the integrated package β. The second attachment 25 is composed of, for example, an inorganic material such as ceramics or a rectangular parallelepiped made of metal. The second attachment 25 is fixed to the mounting surface of the pressing unit 23 in a detachable state. The second attachment 25 is arranged with the second attachment holding surface 25a for holding the integrated package β facing the first attachment 13. The second attachment 25 has suction holes (not shown) on the second attachment holding surface. The second attachment 25 is configured to be able to suck the suction holes by a suction device (not shown). The second attachment 25 is configured to be able to adsorb and hold the integrated package β on the second attachment holding surface 25a by the suction force generated in the suction holes. The second attachment 25 is configured to be movable integrally with the pick-up unit 20 and the pressing unit 23.

[0046] As shown in FIG. 2, the control device 30 controls the stage driving device 11, the first heater 12, the pickup unit driving device 21, the camera 22, the pressing unit driving device 24, and a suction pump (not shown). Substantially, the control device 30 has a configuration in which a CPU, a ROM, a RAM, an HDD, etc. are connected by a bus. Alternatively, the control device 30 may have a configuration including a one-chip LSI or the like. The control device 30 stores various programs and data for controlling the operations of the stage driving device 11, the first heater 12, the pickup unit driving device 21, the pressing unit driving device 24, and the suction pump (not shown).

[0047] The control device 30 is electrically connected to the X-direction actuator and the Y-direction actuator of the stage driving device 11. The control device 30 is electrically connected to the X-direction actuator and the Y-direction actuator of the pickup unit driving device 21. The control device 30 is electrically connected to the Z-direction actuator of the pressing unit driving device 24. The control device 30 is electrically connected to the camera 22. The control device 30 is electrically connected to the first heater 12.

[0048] Also, the control device 30 is electrically connected to the camera 22. The control device 30 is electrically connected to the X-direction scale and the Y-direction scale included in the stage driving device 11 and the pickup unit driving device 21. The control device 30 is electrically connected to the Z-direction scale included in the pressing unit driving device 24.

[0049] The control device 30 is configured to be able to output a position control signal for positioning the first attachment 13 (see FIG. 1) mounted on the stage unit 10 to a target position with respect to the stage driving device 11. The control device 30 is configured to be able to output a position control signal for positioning the second attachment 25 mounted on the pressing unit 23 to a target position with respect to the pickup unit driving device 21 and the pressing unit driving device 24. The control device 30 is configured to be able to output a temperature control signal for raising the temperature of the first heater 12 to a first temperature. The control device 30 is configured to be able to output a control signal for imaging the substrate α and the integrated package β to the camera 22. The control device 30 is configured to be able to output a suction control signal to a suction pump (not shown).

[0050] The control device 30 can acquire the X coordinate and Y coordinate of the substrate α and the integrated package β by the camera 22. The control device 30 can acquire the X coordinate and Y coordinate of the first attachment 13 and the second attachment 25 by the X-direction scale and the Y-direction scale. The control device 30 can acquire the Z coordinate of the second attachment 25 by the Z-direction scale.

[0051] When the substrate α is mounted on the first attachment 13 of the stage unit 10 from an external transfer device, the mounting device 1 configured in this way holds the substrate α by suction force. The mounting device 1 holds the integrated package β by suction force by the second attachment of the pickup unit 20. The mounting device 1 adjusts the positions of the substrate α in the X direction and Y direction by the stage driving device 11 while confirming the position of the substrate α by the camera 22, and adjusts the positions of the integrated package β in the X direction and Y direction by the pickup unit driving device 21. The mounting device 1 adjusts the position of the integrated package β in the Z direction by the pressing unit driving device 24 and arranges the integrated package β at a predetermined position on the substrate α.

[0052] The mounting device 1 presses the integrated package β disposed at a predetermined position on the substrate α toward the substrate α by means of the pressing unit driving device 24. At the same time, the mounting device 1 heats the substrate α by means of the first heater 12 via the first attachment 13. The heat transmitted to the substrate α via the first attachment 13 melts the bumps β6 (see FIG. 4) of the integrated package β. In this way, the mounting device 1 connects the integrated package β to a predetermined position on the substrate α.

[0053] <Structure of integrated package and thermal conductivity in pressing direction> Next, with reference to FIGS. 3 and 4, the structure of the integrated package β and the thermal conductivity in the pressing direction will be described. FIG. 3 is a plan view of the integrated package β mounted on the substrate by the mounting devices 1, 1A, 1C, and 1D. FIG. 4 is a cross-sectional view taken along the line IV-IV in FIG. 3.

[0054] As shown in FIGS. 3 and 4, the integrated package β is an integrated package in which a first semiconductor chip β3 and a second semiconductor chip β4 are connected to a resin package substrate β1 (see FIG. 4) via a silicon interposer β2 (see FIG. 4). The integrated package β is molded by resin β5. The surfaces of the first semiconductor chip β3 and the second semiconductor chip β4 located on the side opposite to the silicon interposer β2 are not covered by the resin β5. The package substrate β1 has bumps β6 including electrodes.

[0055] As shown in FIG. 3, the integrated package β has a region Aβ1 in which the package substrate β1 (see FIG. 4), the silicon interposer β2 (see FIG. 4), and the first semiconductor chip β3 are laminated, a region Aβ2 in which the package substrate β1, the silicon interposer β2, and the second semiconductor chip β4 are laminated, and a region Aβ3 (hatched portion) in which the package substrate β1, the silicon interposer β2, and the resin β5 are laminated.

[0056] As shown in FIG. 4, the pressing-direction thermal conductivity Tβ1 of region Aβ1 shall be the highest in integrated package β. That is, region Aβ1 is the region where heat is most easily transmitted. When heat is transferred from the second heater 26 located on the pressing unit 23 side to region Aβ1, the heat from the second heater 26 is most easily transmitted to the bump β6 located in region Aβ1 via region Aβ1. Therefore, the bump β6 located in region Aβ1 is most easily heated by the heat transmitted from region Aβ1. Also, when heat is transferred from the first heater 12 located on the stage unit 10 side to the bump β6 located in region Aβ1, the heat of the first heater 12 is most easily transmitted to region Aβ1 via the bump β6. Therefore, the bump β6 located in region Aβ1 is most difficult to heat because heat escapes to the outside via region Aβ1.

[0057] The pressing-direction thermal conductivity Tβ2 of region Aβ2 shall be the second highest in integrated package β after region Aβ1.

[0058] The pressing-direction thermal conductivity Tβ3 of region Aβ3 shall be the lowest in integrated package β. That is, region Aβ3 is the region where heat is most difficult to transmit. When heat is transferred from the second heater 26 located on the pressing unit 23 side to region Aβ3, the heat from the second heater 26 is most difficult to transmit to the bump β6 located in region Aβ3 via region Aβ3. Therefore, the bump β6 located in region Aβ3 is most difficult to heat by the heat transmitted from region Aβ3. Also, when heat is transferred from the first heater 12 located on the stage unit 10 side to the bump β6 located in region Aβ3, the heat of the first heater 12 is most difficult to transmit to region Aβ3 via the bump β6. Therefore, the bump β6 located in region Aβ3 is most easily heated because heat is difficult to escape to the outside via region Aβ3.

[0059] <Pressing-Direction Thermal Conductivities of the First Attachment and the Second Attachment> Next, with reference to FIGS. 5 to 8, the pressing direction thermal conductivity of the first attachment 13 and the second attachment 25 will be described. FIG. 5 is a plan view of the first attachment 13. FIG. 6 is a cross-sectional view taken along the line VI-VI in FIG. 5. FIG. 7 is a plan view of the second attachment 25. FIG. 8 is a cross-sectional view taken along the line VIII-VIII in FIG. 7. In the following description, it is assumed that an integrated package β is arranged at a predetermined position on the substrate α.

[0060] As shown in FIGS. 5 and 6, in a state where the first attachment 13 holds the substrate α at a predetermined position, when viewed in the pressing direction of the pressing unit 23, the first attachment 13 has a shape that supports at least a part of the region overlapping the integrated package β arranged on the substrate α. Further, the first attachment 13 supports a region of the substrate α that can receive the force applied to the integrated package β by the pressing unit 23.

[0061] The first attachment 13 is configured to have a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated package β when viewed in the pressing direction. The amount of heat of the first heater 12 transmitted to the substrate α through the first attachment 13 is proportional to the contact area between the first attachment 13 and the substrate α. Therefore, the amount of heat of the first heater 12 transmitted to the substrate α through the first attachment 13 changes based on the ratio of the contact area with the substrate α per unit area at an arbitrary position of the first attachment 13. That is, the pressing direction thermal conductivity of the first attachment 13, which indicates the ease of heat transfer when the heat of the first heater 12 is transmitted to the substrate α through the first attachment 13, can be set to an arbitrary value by changing the ratio of the contact area with the substrate α per unit area at an arbitrary position of the first attachment 13.

[0062] The ratio of the contact area with the substrate α per unit area of the first attachment 13 is decreased, for example, by providing lattice-shaped grooves 13c in a region A1 which is the surface where the first attachment 13 holding the substrate α at a predetermined position is in contact with the substrate α. The region A1 includes, as viewed in the pressing direction, a region A11 overlapping with the region Aβ1 of the integrated package β, a region A12 overlapping with the region Aβ2, and a region A13 overlapping with the region Aβ3 (see FIGS. 3 and 4). The region A13 is a region obtained by excluding the regions A11 and A12 from the region A1.

[0063] The region A11 is configured such that the ratio of the contact area with the substrate α per unit area is larger than those of the regions A12 and A13. That is, the ratio of the grooves 13c in the region A11 is smaller than those of the regions A12 and A13. The ratio of the contact area with the substrate α per unit area of the region A12 is configured to be larger than that of the region A13. That is, the ratio of the grooves 13c in the region A12 is smaller than that of the region A13. The ratio of the contact area with the substrate α per unit area of the region A13 is configured to be smaller than those of the regions A11 and A12. That is, the ratio of the grooves 13c in the region A13 is larger than those of the regions A12 and A13.

[0064] As shown in FIG. 6, the region A11 has a higher pressing-direction thermal conductivity T11 than the regions A12 and A13. The region A12 has a higher pressing-direction thermal conductivity T12 than the region A13. The region A13 has a lower pressing-direction thermal conductivity T13 than the regions A11 and A12.

[0065] That is, in the pressing direction, the pressing direction thermal conductivity T11 of the region A11 that overlaps with the region Aβ1 (see FIG. 3) having the highest pressing direction thermal conductivity in the integrated package β is higher than the pressing direction thermal conductivity T12 of the region A12 and the pressing direction thermal conductivity T13 in the region A13. In the pressing direction, the pressing direction thermal conductivity T12 of the region A12 that overlaps with the region Aβ2 (see FIG. 3) having a higher pressing direction thermal conductivity than the region Aβ3 (see FIG. 3) in the integrated package β is higher than the pressing direction thermal conductivity T13 in the region A13. Therefore, the heat of the first heater 12 is more likely to be transferred to the region A11 than to the regions A12 and A13. The heat of the first heater 12 is more likely to be transferred to the region A12 than to the region A13. The heat of the first heater 12 is less likely to be transferred to the region A13 than to the regions A11 and A12. Thus, the first attachment 13 has a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated package β as viewed in the pressing direction.

[0066] As shown in FIGS. 7 and 8, the second attachment 25 has a shape that supports at least a part of the region that overlaps with the integrated package β as viewed in the pressing direction of the pressing unit 23. Further, the second attachment 25 supports the region of the integrated package β that can receive the force applied to the integrated package β by the pressing unit 23.

[0067] The second attachment 25 is configured to have a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated package β when viewed in the pressing direction. The amount of heat of the first heater 12 transmitted from the integrated package β to the second attachment 25 is proportional to the contact area between the second attachment 25 and the integrated package β. Therefore, the amount of heat of the first heater 12 transmitted from the integrated package β to the second attachment 25 varies based on the ratio of the contact area with the integrated package β per unit area at any position of the second attachment 25. That is, the pressing direction thermal conductivity of the second attachment 25, which indicates the ease of heat transfer when the heat of the first heater 12 is transmitted from the integrated package β to the second attachment 25, can be set to an arbitrary value by changing the ratio of the contact area with the integrated package β per unit area at any position of the second attachment 25.

[0068] In the second attachment 25, a region A2, which is the surface in contact with the integrated package β disposed at a predetermined position of the substrate α, includes a region A21 overlapping with the region Aβ1 of the integrated package β, a region A22 overlapping with the region Aβ2, and a region A33 overlapping with the region Aβ3 when viewed in the pressing direction (see FIGS. 3 and 4).

[0069] The region A21 is configured such that the ratio of the contact area with the integrated package β per unit area is smaller than those of the regions A22 and A23 due to the lattice-like grooves 25c. The region A22 is configured such that the ratio of the contact area with the integrated package β per unit area is smaller than that of the region A23 due to the grooves 25c. The region A23 is configured such that the ratio of the contact area with the integrated package β per unit area is larger than those of the regions A21 and A22 due to the grooves 25c.

[0070] Therefore, the region A21 has a lower pressing direction thermal conductivity T21 than the regions A22 and A23. The region A22 has a lower pressing direction thermal conductivity T22 than the region A23. The region A23 has a higher pressing direction thermal conductivity T23 than the regions A21 and A22.

[0071] That is, in the pressing direction, the pressing direction thermal conductivity T21 of the region A21 that overlaps with the region Aβ1 (see FIG. 3) having the highest pressing direction thermal conductivity in the integrated package β is lower than the pressing direction thermal conductivity T22 of the region A22 and the pressing direction thermal conductivity T23 in the region A23. In the pressing direction, the pressing direction thermal conductivity T22 of the region A22 that overlaps with the region Aβ2 (see FIG. 3) having a higher pressing direction thermal conductivity than the region Aβ3 (see FIG. 3) in the integrated package β is lower than the pressing direction thermal conductivity T23 in the region A23. Thus, the second attachment 25 has a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated package β when viewed in the pressing direction.

[0072] The mounting device 1 configured in this way is configured such that, when viewed in the pressing direction, heat from the first heater 12 is more likely to be transmitted to the region of the substrate α that overlaps with the region Aβ1 via the first attachment 13 than to other regions, and heat in the region Aβ1 is less likely to be transmitted to the second attachment 25 than to other regions (heat in the region Aβ1 is less likely to escape to the second attachment 25). Further, the mounting device 1 is configured such that, when viewed in the pressing direction, heat from the first heater 12 is less likely to be transmitted to the region of the substrate α that overlaps with the region Aβ3 having the lowest pressing direction thermal conductivity than to other regions, and heat in the region Aβ3 is more likely to be transmitted to the second attachment 25 than to other regions (heat in the region Aβ3 is more likely to escape to the second attachment 25). Thereby, the mounting device 1 can suppress variations in the heating temperature due to differences in the pressing direction thermal conductivity of the integrated package β.

[0073] <Mounting of Integrated Package> Next, the mounting of the integrated package β on the substrate α by the mounting device 1 will be described with reference to FIGS. 9 and 10. FIG. 9 is a cross-sectional view of the mounting device 1 holding the substrate α and the integrated package β. FIG. 10 is a cross-sectional view of the state in which the integrated package β is arranged on the substrate α in Embodiment 1.

[0074] On the mounting device 1, a substrate α is mounted on the first attachment 13 by an external transfer device. The mounting device 1 sucks and holds the substrate α by the first attachment 13. The substrate α is held at a predetermined position of the first attachment 13.

[0075] The mounting device 1 sucks and holds an integrated package β at a predetermined standby position via a second attachment by a pressing unit 23 moved by a pickup unit driving device 21. The integrated package β is held at a predetermined position of the second attachment 25. At this time, the region A21 of the second attachment 25 is in contact with the region Aβ1 of the integrated package β. In the present embodiment, the region A21 of the second attachment 25 is in contact with the first semiconductor chip β3. The region A22 of the second attachment 25 is in contact with the region Aβ2 of the integrated package β. In the present embodiment, the region A22 of the second attachment 25 is in contact with the second semiconductor chip β4. The region A23 of the second attachment 25 is in contact with the region Aβ3 of the integrated package β. In the present embodiment, the region A23 of the second attachment 25 is in contact with the resin β5.

[0076] As shown in FIG. 10, the mounting device 1 arranges the integrated package β on the substrate α mounted on the first attachment 13 by the pressing unit 23. At this time, the integrated package β is held by the second attachment 25 in a state where the bumps β6 of the integrated package β are in contact with the electrodes on the substrate α.

[0077] The substrate α with the integrated package β arranged at a predetermined position is held at a predetermined position of the first attachment 13. At this time, the region A11 of the first attachment 13 overlaps the region Aβ1 of the integrated package β when viewed in the pressing direction. The region A12 of the first attachment 13 overlaps the region Aβ2 of the integrated package β when viewed in the pressing direction. The region A23 of the second attachment 25 overlaps the region Aβ3 of the integrated package β when viewed in the pressing direction.

[0078] To melt the bump β6, the mounting device 1 heats the substrate α and the integrated package β to the first temperature by the first heater 12 via the first attachment 13. Heat is transferred from the heating surface of the first heater 12 to the first attachment 13. At the same time, the mounting device 1 presses the integrated package β toward the substrate α with a predetermined external force by the pressing unit 23.

[0079] The first attachment 13 receives heat from the first heater 12 in a proportion proportional to the pressing direction thermal conductivity T11 of the region A11, the pressing direction thermal conductivity T12 of the region A12, and the pressing direction thermal conductivity T13 of the region A13 (see FIG. 6). Therefore, a larger amount of heat is transferred to the region A11 than to the regions A12 and A13. A larger amount of heat is transferred to the region A12 than to the region A13. A smaller amount of heat is transferred to the region A13 than to the regions A11 and A12. That is, heat from the first heater 12 is more likely to be transferred to the region A11 than to the regions A12 and A13. Heat from the first heater 12 is more likely to be transferred to the region A12 than to the region A13. Heat from the first heater 12 is less likely to be transferred to the region A13 than to the regions A11 and A12.

[0080] The heat transferred to the first attachment 13 is transferred to the substrate α in a proportion proportional to the pressing direction thermal conductivity T11 of the region A11, the pressing direction thermal conductivity T12 of the region A12, and the pressing direction thermal conductivity T13 of the region A13 (see FIG. 6). Therefore, a larger amount of heat is transferred to the portion of the substrate α in contact with the region A11 than to the portions in contact with the regions A12 and A13. A larger amount of heat is transferred to the portion of the substrate α in contact with the region A12 than to the portion in contact with the region A13. A smaller amount of heat is transferred to the portion of the substrate α in contact with the region A13 than to the portions in contact with the regions A11 and A12.

[0081] The heat transferred from region A11 to substrate α is transmitted in the order of bump β6 located in region Aβ1 of integrated package β, a part of package substrate β1, a part of silicon interposer β2, and the first semiconductor chip β3 through electrodes or the like of substrate α that overlap region A11 when viewed in the pressing direction. The heat transferred from region A12 to substrate α is transmitted in the order of bump β6 located in region Aβ2 of integrated package β, a part of package substrate β1, a part of silicon interposer β2, and the second semiconductor chip β4 through electrodes or the like of substrate α that overlap region A12 when viewed in the pressing direction. The heat transferred from region A13 to substrate α is transmitted in the order of bump β6 located in region Aβ3 of integrated package β, a part of package substrate β1, a part of silicon interposer β2, and resin β5 through electrodes or the like of substrate α that overlap region A13 when viewed in the pressing direction.

[0082] In integrated package β, a proportion of the amount of heat proportional to the through-thickness thermal conductivity Tβ1 of region Aβ1, the through-thickness thermal conductivity Tβ2 of region Aβ2, and the through-thickness thermal conductivity Tβ3 of region Aβ3 is transmitted (see Fig. 4). Therefore, a larger amount of heat is transmitted to region Aβ1 than to regions Aβ2 and Aβ3. A larger amount of heat is transmitted to region Aβ2 than to region Aβ3. A smaller amount of heat is transmitted to region Aβ3 than to regions Aβ1 and Aβ2. That is, the heat of the first heater 12 is more likely to be transmitted to region Aβ1 where the first semiconductor chip β3 is located than to regions Aβ2 and Aβ3. The heat of the first heater 12 is more likely to be transmitted to region Aβ2 where the second semiconductor chip β4 is located than to region Aβ3. The heat of the first heater 12 is less likely to be transmitted to region Aβ3 where resin β5 is located than to regions Aβ1 and Aβ2.

[0083] The heat transferred to the integrated package β is transferred to the second attachment 25 at a rate proportional to the through-thickness thermal conductivity Tβ1 of region Aβ1, the through-thickness thermal conductivity Tβ2 of region A12, and the through-thickness thermal conductivity Tβ3 of region A13 (see FIG. 4). The heat transferred to region Aβ1 is transferred to region A21 of the second attachment 25 that overlaps region Aβ1 via the first semiconductor chip β3 when viewed in the pressing direction. The heat transferred to region Aβ2 is transferred to region A22 of the second attachment 25 that overlaps region Aβ2 via the second semiconductor chip β4 when viewed in the pressing direction. The heat transferred to region Aβ3 is transferred to region A23 of the second attachment 25 via the resin β5 when viewed in the pressing direction.

[0084] An amount of heat proportional to the through-thickness thermal conductivity T21 of region A21, the through-thickness thermal conductivity T22 of region A22, and the through-thickness thermal conductivity T23 of region A23 is transferred to the second attachment 25 (see FIG. 8). Therefore, a smaller amount of heat is transferred to the portion of the pressing unit 23 in contact with region A21 among those in contact with the second attachment 25 than to the portions in contact with regions A22 and A23. A smaller amount of heat is transferred to the portion of the pressing unit 23 in contact with region A22 than to the portion in contact with A23. A larger amount of heat is transferred to the portion of the pressing unit 23 in contact with region A23 than to the portions in contact with regions A21 and A22. That is, region A21 is less likely to dissipate the heat of the integrated package β to the outside than regions A22 and A23. Region A22 is less likely to dissipate the heat of the integrated package β to the outside than region A23. Region A23 is more likely to dissipate the heat of the integrated package β to the outside than regions A21 and A22.

[0085] The mounting device 1 increases the amount of heat of the first heater 12 transferred to the region Aβ1 by bringing the region A11 with the highest pressing-direction thermal conductivity in the first attachment 13 into contact with the region Aβ1 in the integrated package β that is prone to heating and cooling. Further, the mounting device 1 makes it difficult for the heat transferred to the region Aβ1 to escape to the outside by bringing the region A21 with the lowest pressing-direction thermal conductivity in the second attachment 25 into contact with the region Aβ1. Thereby, the mounting device 1 makes it difficult for the region Aβ1 to drop below the first temperature.

[0086] Also, the mounting device 1 suppresses the amount of heat of the first heater 12 transferred to the region Aβ3 by bringing the region A13 with the lowest pressing-direction thermal conductivity in the first attachment 13 into contact with the region Aβ3 in the integrated package β that is difficult to heat and cool. Further, the mounting device 1 makes it easy for the heat transferred to the region Aβ3 to escape to the outside by bringing the region A23 with the highest pressing-direction thermal conductivity in the second attachment 25 into contact with the region Aβ3. Thereby, the mounting device 1 makes it difficult for the region Aβ3 to rise above the first temperature.

[0087] The integrated package β heated to the first temperature by the first heater 12 and pressed toward the substrate α by the pressing unit 23 contacts the electrode of the substrate α in a state where the bump β6 is melted.

[0088] When a predetermined time has elapsed since the start of heating by the first heater 12 and pressing by the pressing unit 23, the mounting device 1 stops the heating by the first heater 12. Further, the mounting device 1 stops the pressing by the pressing unit 23 after a predetermined time has elapsed since the heating by the first heater 12 was stopped.

[0089] In this way, the mounting device 1 adjusts the ease of heat transfer of the first heater 12 to the integrated package β by the first attachment 13, and adjusts the ease of heat transfer from the integrated package β to the outside by the second attachment 25.

[0090] The first attachment 13 can transfer a quantity of heat to region Aβ1 that is greater than the quantity of heat escaping from region Aβ1 in the pressing direction thermal conductivity of the integrated package β, so the temperature of region Aβ1 can be maintained within the allowable temperature range. Also, since heat is less likely to be transferred to region Aβ3 where the pressing direction thermal conductivity of the integrated package β is lower compared to other parts, the temperature of the integrated package β can be suppressed within the allowable temperature range.

[0091] The second attachment 25 can maintain the temperature of region Aβ1 within the allowable temperature range because the quantity of heat conducted to region Aβ1 where the pressing direction thermal conductivity of the integrated package β is higher compared to other parts is less likely to be transferred to the outside. Also, since part of the heat stored in region Aβ3 where the pressing direction thermal conductivity of the integrated package β is lower compared to other parts is likely to be transferred to the outside, the temperature of the integrated package β can be suppressed within the allowable temperature range. Thereby, variations in temperature when heating the integrated package β with non-uniform thermal conductivity can be suppressed, and connection failures of the integrated package β to the substrate α can be suppressed.

[0092] [Modification Example 1 of Embodiment 1] Hereinafter, with reference to FIGS. 1, 11, and 12, a mounting device 1A which is a modification example 1 of Embodiment 1 according to the present invention will be described. FIG. 11 is a plan view of the first attachment 13A in modification example 1 of Embodiment 1 and a cross-sectional view taken along the line X-X in the plan view. FIG. 12 is a plan view of the second attachment 25A in modification example 1 of Embodiment 1 and a cross-sectional view taken along the line XII-XII in the plan view.

[0093] The mounting device 1A differs in the configurations of the first attachment 13A and the second attachment 25A from the first attachment 13 and the second attachment 25 of the mounting device 1. In the following embodiments, the same components as those in Embodiment 1 are denoted by the same reference numerals and the description thereof is omitted, and only the parts different from Embodiment 1 will be described.

[0094] <Configuration of the mounting device 1A> As shown in Fig. 1, the mounting device 1A includes a stage unit 10, a pickup unit 20, and a control device 30 (see Fig. 2). The stage unit 10 supports a first heater 12 which is a first heating unit and a first attachment 13A made of an aluminum alloy. The pickup unit 20 supports a pressing unit 23 and a second attachment 25A made of an aluminum alloy.

[0095] As shown in Fig. 11, the first attachment 13A is configured to have a pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity of the integrated package β when viewed in the pressing direction. The amount of heat of the first heater 12 transmitted to the substrate α through the first attachment 13A varies depending on the type of surface treatment and the thickness of the surface treatment of the first attachment 13A. The amount of heat of the first heater 12 (see Fig. 1) transmitted to the substrate α through the first attachment 13A decreases, for example, when the first attachment 13A has an aluminum film. That is, the pressing direction thermal conductivity of the first attachment 13A can be set to an arbitrary value by changing the presence or absence of a surface treatment (hereinafter, anodizing treatment) that constitutes the aluminum film and the film thickness of the aluminum oxide film at an arbitrary position of the first attachment 13A.

[0096] In the present embodiment, the region A11 of the first attachment 13A does not have an aluminum oxide film. The region A12 of the first attachment 13A has an aluminum oxide film C2 with a thinner film thickness than the region A13. The region A13 of the first attachment 13A has an aluminum oxide film C3 with a thicker film thickness than the region A12.

[0097] Therefore, the region A11 has a higher pressing direction thermal conductivity T11 than the regions A12 and A13. The region A12 has a higher pressing direction thermal conductivity T12 than the region A13. The region A13 has a lower pressing direction thermal conductivity T13 than the regions A11 and A12.

[0098] As shown in FIG. 12, the second attachment 25A is configured to have a pressing-direction thermal conductivity based on the distribution of the pressing-direction thermal conductivity of the integrated package β when viewed in the pressing direction. The amount of heat of the first heater 12 (see FIG. 1) transmitted from the integrated package β to the second attachment 25A varies depending on the type of surface treatment and the thickness of the surface treatment of the second attachment 25A. Therefore, the amount of heat of the first heater 12 transmitted from the integrated package β to the second attachment 25A decreases, for example, when the second attachment 25A has an aluminum film. That is, the pressing-direction thermal conductivity of the second attachment 25A can be set to an arbitrary value by changing the presence or absence of anodization treatment and the film thickness of the aluminum oxide film at an arbitrary position of the second attachment 25A.

[0099] In the present embodiment, the region A21 of the second attachment 25A has the thickest aluminum oxide film C3. The region A22 of the second attachment 25A has an aluminum oxide film C2 with a thickness thinner than that of the region A21. The region A23 of the second attachment 25A does not have an aluminum oxide film.

[0100] Therefore, the region A21 has a lower pressing-direction thermal conductivity T21 than the regions A22 and A23. The region A22 has a lower pressing-direction thermal conductivity T22 than the region A23. The region A23 has a higher pressing-direction thermal conductivity T23 than the regions A21 and A22.

[0101] The mounting device 1A configured as described above is configured such that, when viewed in the pressing direction, heat from the first heater 12 is more likely to be transmitted to the region of the substrate α overlapping with the region Aβ1 (see FIG. 4) than to other regions via the first attachment 13A, and heat from the region Aβ1 is less likely to be transmitted to the second attachment 25A than to other regions. Also, the mounting device 1A is configured such that, when viewed in the pressing direction, heat from the first heater 12 is less likely to be transmitted to the region of the substrate α overlapping with the region Aβ3 (see FIG. 4) where the thermal conductivity in the pressing direction is the lowest than to other regions via the first attachment 13A, and heat from the region Aβ3 is more likely to be transmitted to the second attachment 25A than to other regions. The first attachment 13A and the second attachment 25A distribute the heat of the first heater 12 to each part of the substrate α and the integrated package β by arbitrarily changing the presence or absence and the film thickness of the aluminum oxide film. Thereby, the mounting device 1A can suppress variations in the heating temperature due to differences in the thermal conductivity in the pressing direction of the integrated package β and suppress poor connection of the integrated package β to the substrate α.

[0102] [Modification Example 2 of Embodiment 1] Hereinafter, with reference to FIGS. 1, 13, and 14, a mounting device 1B which is a modification example 2 of Embodiment 1 according to the present invention will be described. FIG. 13 is a plan view of the first attachment 13B in Modification Example 2 of Embodiment 1 and a cross-sectional view taken along the arrow XIII-XIII in the plan view. FIG. 14 is a plan view of the second attachment 25B in Modification Example 2 of Embodiment 1 and a cross-sectional view taken along the arrow XIV-XIV in the plan view.

[0103] The mounting device 1B is different from the first attachment 13 and the second attachment 25 of the mounting device 1 in the configuration of the first attachment 13B and the second attachment 25B.

[0104] <Configuration of Mounting Device 1B> As shown in FIG. 1, the mounting device 1B includes a stage unit 10, a pickup unit 20, and a control device 30 (see FIG. 2). The stage unit 10 supports a first heater 12, which is a first heating unit, and a first attachment 13B. The pickup unit 20 supports a pressing unit 23 and a second attachment 25B.

[0105] As shown in FIG. 13, the first attachment 13B is configured to have a pressing-direction thermal conductivity based on the distribution of the pressing-direction thermal conductivity of the integrated package β when viewed in the pressing direction. The amount of heat of the first heater 12 (see FIG. 1) transmitted to the substrate α via the first attachment 13B varies depending on the material of the first attachment 13B. For example, the amount of heat of the first heater 12 transmitted to the substrate α via the first attachment 13B decreases when a part of the first attachment 13B is made of resin. That is, the pressing-direction thermal conductivity of the first attachment 13B can be set to an arbitrary value by changing the material at an arbitrary position of the first attachment 13B.

[0106] In the present embodiment, the region A11 of the first attachment 13B is constituted by a first member 13x made of an aluminum alloy. The region A12 of the first attachment 13B is constituted by a second member 13y made of iron, which has a lower pressing-direction thermal conductivity than the first member 13x of the region 11A. The region A13 of the first attachment 13B is constituted by a third member 13z made of resin, which has a lower pressing-direction thermal conductivity than the second member 13y of the region A12.

[0107] Therefore, the region A11 has a higher pressing-direction thermal conductivity T11 than the regions A12 and A13. The region A12 has a higher pressing-direction thermal conductivity T12 than the region A13. The region A13 has a lower pressing-direction thermal conductivity T13 than the regions A11 and A12.

[0108] As shown in FIG. 14, the second attachment 25B is configured to have a pressing-direction thermal conductivity based on the distribution of the pressing-direction thermal conductivity of the integrated package β when viewed in the pressing direction. The amount of heat of the first heater 12 transmitted from the integrated package β to the second attachment 25B varies depending on the material of the second attachment 25B. The amount of heat of the first heater 12 transmitted from the integrated package β to the second attachment 25B decreases, for example, when a part of the second attachment 25B is made of resin. That is, the pressing-direction thermal conductivity of the second attachment 25B can be set to an arbitrary value by changing the material at an arbitrary position of the second attachment 25B.

[0109] In the present embodiment, the region A21 of the second attachment 25B is constituted by a resin-made first member 25x. The region A22 of the second attachment 25B is constituted by an iron-made second member 25y having a higher pressing-direction thermal conductivity than the member 25x in the region 21A. The region A23 of the first attachment 13B is constituted by an aluminum alloy-made third member 25z having a higher pressing-direction thermal conductivity than the second member 25y in the region A22.

[0110] Therefore, the region A21 has a lower pressing-direction thermal conductivity T21 compared to the regions A22 and A23. The region A22 has a lower pressing-direction thermal conductivity T22 compared to the region A23. The region A23 has a higher pressing-direction thermal conductivity T23 compared to the regions A21 and A22.

[0111] The mounting device 1B configured as described above is configured such that, when viewed in the pressing direction, heat from the first heater 12 is more likely to be transmitted to the region of the substrate α overlapping with the region Aβ1 than to other regions via the first attachment 13B, and heat in the region Aβ1 (see FIG. 4) is less likely to be transmitted to the second attachment 25B than to other regions. Further, the mounting device 1A is configured such that, when viewed in the pressing direction, heat from the first heater 12 is less likely to be transmitted to the region of the substrate α overlapping with the region Aβ3 (see FIG. 4) where the heat conductivity in the pressing direction is the lowest than to other regions via the first attachment 13B, and heat in the region Aβ3 is more likely to be transmitted to the second attachment 25B than to other regions. The first attachment 13B and the second attachment 25B distribute the heat of the first heater 12 to each part of the substrate α and the integrated package β by arbitrarily changing the material of the members in each region. Thereby, the mounting device 1B can suppress variations in the heating temperature due to differences in the heat conductivity in the pressing direction of the integrated package β and suppress poor connection of the integrated package β to the substrate α.

[0112] [Embodiment 2] Hereinafter, with reference to FIGS. 15 and 16, a mounting device 1C according to Embodiment 2 of the mounting device according to the present invention will be described. The mounting device 1C is different from the mounting device 1 in that it includes a second heater 26. FIG. 15 is an overall configuration diagram of the mounting device 1C in Embodiment 2 of the present invention. FIG. 16 is a cross-sectional view of the state in which the substrate α and the integrated package β are held by the mounting device 1C in Embodiment 2.

[0113] <Configuration of the mounting device 1C> As shown in FIGS. 15 and 16, the mounting device 1C includes a stage unit 10, a pickup unit 20, and a control device 30.

[0114] The pickup unit 20 is provided with a camera 22 for measuring the positions of the substrate α and the integrated package β. The pickup unit 20 supports a pressing unit 23, a second attachment 25, and a second heater which is a second heating unit.

[0115] The second heater 26, which is the second heating unit, heats the integrated package β via the second attachment 25. The second heater 26 is, for example, a constant heater having a ceramic housing. The second heater 26 is configured to maintain a preset second temperature. The second heater 26 is fixed to the pressing unit mounting surface 23a. The second heater 26 is arranged with its heating surface facing the first attachment 13. The second heater 26 is configured to be movable integrally with the pressing unit 23. The heat transfer amount per unit area on the heating surface of the second heater 26 is equal at all positions. That is, the second heater 26 heats the entire surface of the heating surface equally. The second heater 26 is configured to be controllable by a control device (not shown).

[0116] The second attachment 25 holds the integrated package β. The second attachment 25 is constituted by, for example, a rectangular parallelepiped made of metal. The second attachment 25 is detachably fixed to the heating surface of the second heater 26. The second attachment 25 is configured to be movable integrally with the pickup unit 20 and the pressing unit 23. Further, the second attachment 25 is heated by the second heater 26.

[0117] <Mounting of Integrated Package> Next, the mounting of the integrated package β on the substrate α by the mounting device 1C will be described with reference to FIG. 16.

[0118] As shown in FIG. 16, the mounting device 1C sucks and holds the integrated package β in a predetermined standby position via the second attachment by the pressing unit 23 moved by the pickup unit driving device 21 (see FIG. 15). The integrated package β is held at a predetermined position of the second attachment 25. At this time, the second heater 26 is maintained at the second temperature. Therefore, the integrated package β is heated to the second temperature by the second heater 26 via the second attachment 25 while being held by the second attachment 25. Note that the second temperature is lower than the first temperature of the first heater 12 (see FIG. 15).

[0119] In the second attachment 25, a proportion of the amount of heat proportional to the pressing-direction thermal conductivity T21 of region A21, the pressing-direction thermal conductivity T22 of region A22, and the pressing-direction thermal conductivity T23 of region A23 is transmitted (see Fig. 8). Therefore, a larger amount of heat is transmitted to region A21 than to regions A22 and A23. A larger amount of heat is transmitted to region A22 than to A23. A smaller amount of heat is transmitted to region A23 than to regions A21 and A22. That is, it is more difficult for the heat of the first heater 12 to be transmitted to region A21 than to regions A22 and A23. It is more difficult for the heat of the first heater 12 to be transmitted to region A12 than to region A13. The heat of the first heater 12 is more easily transmitted to region A13 than to regions A11 and A12.

[0120] The heat transmitted to the second attachment 25 is transmitted to the integrated package β at a rate proportional to the pressing-direction thermal conductivity T21 of region A21, the pressing-direction thermal conductivity T22 of region A22, and the pressing-direction thermal conductivity T23 of region A23. Therefore, a smaller amount of heat is transmitted to the portion of the integrated package β in contact with region A21 than to the portions in contact with regions A22 and A23. A smaller amount of heat is transmitted to the portion of the integrated package β in contact with region A22 than to the portion in contact with A23. A larger amount of heat is transmitted to the portion of the integrated package β in contact with region A23 than to the portions in contact with regions A21 and A22. That is, it is more difficult for the heat of the second heater 26 transmitted to region A21 to be transmitted to the integrated package β than to regions A22 and A23. It is more difficult for the heat of the second heater 26 transmitted to region A22 to be transmitted to the integrated package β than to region A23. The heat of the second heater 26 transmitted to region A23 is more easily transmitted to the integrated package β than to regions A21 and A22.

[0121] The heat transmitted from region A21 to integrated package β is transmitted in the order of the first semiconductor chip β3 located in region Aβ1 of integrated package β overlapping with region A21, a part of the silicon interposer β2, a part of the package substrate β1, and the bump β6 when viewed in the pressing direction. The heat transmitted from region A22 to integrated package β is transmitted in the order of the second semiconductor chip β4 located in region Aβ2 of integrated package β overlapping with region A22, a part of the silicon interposer β2, a part of the package substrate β1, and the bump β6 when viewed in the pressing direction. The heat transmitted from region A23 to integrated package β is transmitted in the order of the resin β5 located in region Aβ3 of integrated package β overlapping with region A23, a part of the silicon interposer β2, a part of the package substrate β1, and the bump β6 when viewed in the pressing direction.

[0122] An amount of heat proportional to the through-thickness thermal conductivity T21 of region A21, the through-thickness thermal conductivity T22 of region A22, and the through-thickness thermal conductivity T23 of region A23 is transmitted to integrated package β (see FIG. 8). Therefore, a smaller amount of heat is transmitted to region Aβ1 than to regions Aβ2 and Aβ3. A smaller amount of heat is transmitted to region Aβ2 than to region Aβ3. A larger amount of heat is transmitted to region Aβ3 than to regions Aβ1 and Aβ2. That is, a smaller amount of heat is transmitted to region Aβ1 having a through-thickness thermal conductivity Tβ1 higher than those of regions Aβ2 and Aβ3 than to regions Aβ2 and Aβ3 (see FIG. 4). A smaller amount of heat is transmitted to region Aβ2 having a through-thickness thermal conductivity Tβ2 higher than that of region Aβ3 than to region Aβ3 (see FIG. 4). A larger amount of heat is transmitted to region Aβ3 having a through-thickness thermal conductivity Tβ3 lower than those of regions Aβ1 and Aβ2 than to regions Aβ1 and Aβ2 (see FIG. 4).

[0123] The mounting device 1C decreases the amount of heat of the second heater 26 transmitted to the area Aβ1 by bringing the area A21, which has the lowest pressing direction heat conductivity T21 in the second attachment 25, into contact with the area Aβ1 in the integrated package β that is prone to heating. Further, the mounting device 1 increases the amount of heat of the second heater 26 transmitted to the area Aβ3 by bringing the area A23, which has the highest pressing direction heat conductivity T23 in the second attachment 25, into contact with the area Aβ3 in the integrated package β that is less prone to heating. Thereby, the mounting device 1C can efficiently heat the integrated package β by the second heater 26.

[0124] In this way, the mounting device 1C adjusts the ease of heat transfer of the first heater 12 to the integrated package β by the first attachment 13 and adjusts the ease of heat transfer of the second heater 26 to the integrated package β by the second attachment 25.

[0125] The second attachment 25 suppresses the amount of heat transmitted to the area Aβ1 where the pressing direction heat conductivity of the integrated package β is higher than other parts, and increases the amount of heat transmitted to the area Aβ3 where the pressing direction heat conductivity of the integrated package β is higher than other parts, so that the temperature of the integrated package β can be efficiently raised to the second temperature. Thereby, it is possible to suppress the variation in temperature when heating the integrated package β with non-uniform heat conductivity and suppress the connection failure of the integrated package β to the substrate α.

[0126] [Other Embodiments] In the above-described Embodiment 1, the mounting devices 1, 1A, and 1B uniformly heat the first attachment 13 by the first heater 12 which is the first heating unit. In Embodiment 2, the mounting device 1C uniformly heats the second attachment 25 by the second heater 26 which is the second heating unit. However, the first heating unit and the second heating unit may be configured to heat the first attachment and the second attachment at different temperatures for each area.

[0127] FIG. 17 is a cross-sectional view of the first heater 12D and the first attachment 13 in another embodiment. As shown in FIG. 17, the first heater 12D, which is the first heating unit, has a first heating region Ah1 and a second heating region Ah2. The first heating region Ah1 and the second heating region Ah2 are each independently configured to be temperature controllable. That is, the first heater 12D can heat the first heating region Ah1 and the second heating region Ah2 to different temperatures.

[0128] The first heating region Ah1 is positioned so as to overlap with the region A11 of the first attachment 13 when viewed in the pressing direction. The second heating region Ah2 is positioned so as to overlap with the regions A12 and A13 of the first attachment 13 when viewed in the pressing direction.

[0129] When the first attachment 13 is heated by the first heater 12D, heat based on the pressing-direction thermal conductivity T11 and the first region temperature of the first heating region Ah1 is transmitted to the region A11 of the first attachment 13. Heat based on the pressing-direction thermal conductivity T12 and the second region temperature of the second heating region Ah2 is transmitted to the region A12. Heat based on the pressing-direction thermal conductivity T13 and the second region temperature of the second heating region Ah2 is transmitted to the region A13.

[0130] By configuring in this way, in addition to the heat distribution by the first attachment 13, the mounting apparatus adjusts the temperatures of the substrate α and the integrated package β by changing the heating temperature by the first heater 12D based on the pressing-direction thermal conductivity of the integrated package β. Thereby, it is possible to suppress the variation in temperature when heating the integrated package β with non-uniform thermal conductivity and to suppress the connection failure of the integrated package β to the substrate α.

[0131] In the above-described first embodiment, the mounting apparatuses 1, 1A, and 1B position the integrated package β with respect to the substrate α by the pickup unit 20. However, the mounting apparatus may be configured to position the substrate α with respect to the integrated package β by a stage.

[0132] Also, in the above-described Embodiment 1, the mounting devices 1, 1A, and 1B pick up the integrated package β by the pickup unit 20. However, the mounting device may be configured to pick up the integrated package β by an external pickup unit and position it with respect to the substrate α.

[0133] Also, in the above-described Embodiments 1 and 2, the mounting devices 1, 1A, 1B, and 1C hold the substrate α by the first attachment 13 and hold the integrated package β by the second attachment. However, the mounting device may be configured to hold the integrated package β by the first attachment and hold the substrate α by the second attachment.

[0134] In the above-described embodiments, the mounting devices 1, 1A, and 1B press the substrate α and the integrated package β mounted on the stage unit 10 by the pressing unit 23 that relatively moves in the direction of the stage unit 10. However, the mounting device may be configured to press the substrate α and the integrated package β by moving the stage unit on which the substrate α and the integrated package β are mounted toward the pressing unit.

[0135] Also, in the above-described Embodiments 1 and 2, the first attachment 13 and the second attachment 25 adjust the thermal conductivity in the pressing direction by forming grooves in the region that contacts the substrate α or the integrated package β. However, the first attachment and the second attachment may adjust the thermal conductivity in the pressing direction by the surface roughness of the region that contacts the substrate α or the integrated package β.

[0136] Also, in the modification of the above-described Embodiment 1, the first attachment 13 and the second attachment 25 adjust the thermal conductivity in the pressing direction by forming an aluminum oxide film in the region that contacts the substrate α or the integrated package β. However, the surface treatment for adjusting the thermal conductivity in the pressing direction of the first attachment and the second attachment may be any surface treatment that can adjust the thermal conductivity in the pressing direction of the region that contacts the substrate α or the integrated package β.

[0137] Also, in the above-described Embodiments 1 and 2, the first attachments 13, 13A, and 13B adjust the thermal conductivity in the pressing direction by changing one of the ratio of the contact area, the surface treatment, and the material of the regions A11, A12, and A13, which are the surfaces that contact the substrate α. However, the first attachment may adjust the thermal conductivity in the pressing direction by changing one of the ratio of the contact area, the surface treatment, and the material of at least one of the surfaces that contact the substrate α (object to be held) and the surface that contacts the first heating unit.

[0138] Also, in the above-described Embodiments 1 and 2, the second attachments 25, 25A, and 25B adjust the thermal conductivity in the pressing direction by changing one of the ratio of the contact area, the surface treatment, and the material of the regions A21, A22, and A23, which are the regions that contact the integrated package β. However, the second attachment may adjust the thermal conductivity in the pressing direction by changing one of the ratio of the contact area, the surface treatment, and the material of at least one of the surfaces that contact the integrated package β (object to be held) and the surface that contacts the pressing unit (second heating unit).

[0139] Also, in the above-described Embodiments 1 and 2, the mounting devices 1, 1A, 1B, and 1C adjust the thermal conductivity in the pressing direction of the first attachments 13, 13A, and 13B and the second attachments 25, 25A, and 25B. However, the mounting device may have a configuration that adjusts the thermal conductivity in the pressing direction of at least one of the first attachment and the second attachment.

[0140] Also, in the above-described Embodiment 1, the mounting devices 1, 1A, and 1B heat the first attachments 13, 13A, and 13B with the first heater 12. However, the mounting device may be configured to heat a second attachment.

[0141] Also, in the above-described Embodiments 1 and 2, the mounting devices 1, 1A, and 1B heat the first attachments 13, 13A, and 13B with the first heater 12, which is a pulse heater. However, the mounting device may be configured to heat the first attachment with a constant heater.

[0142] Also, in the above-described Embodiment 2, the mounting device 1C heats the second attachment 25 with the second heater 26, which is a constant heater. However, the mounting device may be configured to heat the second attachment with a pulse heater.

[0143] Although the embodiments of the present invention have been described above, the above-described embodiments are merely examples for implementing the present invention. Therefore, the present invention is not limited to the above-described embodiments, and the above-described embodiments can be appropriately modified and implemented without departing from the spirit thereof.

Description of Reference Numerals

[0144] 1, 1A, 1B, 1C, 1D Mounting device 10 Stage unit 10a Stage mounting surface 11 Stage drive device 12, 12D First heater 13, 13A, 13B First attachment 13a First attachment holding surface 13c Groove 13x, 25x First member 13y, 25y Second member 13z, 25z Third member 20 Pickup unit 20a Pickup unit mounting surface 21 Pickup unit drive device 22 cameras 23 pressing unit 23a pressing unit mounting surface 24 pressing unit drive device 25, 25A, 25B second attachment 25a second attachment holding surface 25c groove 26 second heater 30 control device α substrate β integrated package β1 package substrate β2 silicon interposer β3 first semiconductor chip β4 second semiconductor chip β5 resin β6 bump A11, A12, A13 regions of the first attachment A21, A22, A23 regions of the second attachment Aβ1, Aβ2, Aβ3 regions of the integrated package T11, T12, T13 through-plane thermal conductivity of the first attachment T21, T22, T23 through-plane thermal conductivity of the second attachment Tβ1, Tβ2, Tβ3 through-plane thermal conductivity of the integrated package C2, C3 aluminum oxide film Ah1 first heating region Ah2 second heating region

Claims

1. a stage on which at least one of an integrated package in which a plurality of semiconductor chips are integrated and molded and a substrate on which the integrated package is mounted is mounted; a pressing part arranged to face the stage, moving relatively toward the stage, and pressing the substrate and the integrated package; at least one of a first heating part supported by the stage and heating the substrate and the integrated package, and a second heating part supported by the pressing part and heating the substrate and the integrated package; at least one of a first attachment supported by the stage and contacting, in the moving direction of the pressing part, either one of the substrate and the integrated package, and a second attachment supported by the pressing part and contacting, in the moving direction of the pressing part, the other one of the substrate and the integrated package, the mounting device having: the first attachment and the second attachment are: configured to have a distribution of the pressing direction thermal conductivity based on the distribution of the pressing direction thermal conductivity which is the thermal conductivity of the integrated package in the pressing direction of the pressing part; a mounting device.

2. In the mounting device according to Claim 1, the first attachment and the second attachment are: when contacting the substrate, configured such that, when viewed in the pressing direction, the pressing direction thermal conductivity of a portion overlapping with the portion having the highest pressing direction thermal conductivity of the integrated package becomes the highest, and the pressing direction thermal conductivity of a portion overlapping with the portion having the lowest pressing direction thermal conductivity of the integrated package becomes the lowest; when contacting the integrated package, configured such that, when viewed in the pressing direction, the pressing direction thermal conductivity of a portion overlapping with the portion having the highest pressing direction thermal conductivity of the integrated package becomes the lowest, and the pressing direction thermal conductivity of a portion overlapping with the portion having the lowest pressing direction thermal conductivity of the integrated package becomes the highest; a mounting device.

3. In the mounting device according to Claim 1 or 2, the first attachment is: by changing at least one of the ratio of the contact area per unit area with the substrate or the integrated package and the ratio of the contact area per unit area with the first heating part at an arbitrary position in a portion overlapping with the integrated package when viewed in the pressing direction, changing the pressing direction thermal conductivity at the arbitrary position; the second attachment is: By changing at least one of the ratio of the contact area per unit area between the substrate or the integrated package and the contact area per unit area between the second heating part at an arbitrary position in any position of the portion overlapping the integrated package when viewed in the pressing direction, the pressing direction thermal conductivity at the arbitrary position is changed. Mounting device.

4. In the mounting device according to claim 1 or 2, The first attachment is In the portion overlapping the integrated package when viewed in the pressing direction, the pressing direction thermal conductivity at the arbitrary position is changed by changing at least one of the surface treatment of the contact portion between the substrate or the integrated package at an arbitrary position and the surface treatment of the contact portion between the first heating part at an arbitrary position. The second attachment is In the portion overlapping the integrated package when viewed in the pressing direction, the pressing direction thermal conductivity at the arbitrary position is changed by changing at least one of the surface treatment of the contact portion between the substrate or the integrated package at an arbitrary position and the surface treatment of the contact portion between the second heating part at an arbitrary position. Mounting device.

5. In the mounting device according to claim 1 or 2, The first attachment is In the portion overlapping the integrated package when viewed in the pressing direction, the pressing direction thermal conductivity at the arbitrary position is changed by changing at least one of the material of the contact portion between the substrate or the integrated package at an arbitrary position and the material of the contact portion between the first heating part at an arbitrary position. The second attachment is In the portion overlapping the integrated package when viewed in the pressing direction, the pressing direction thermal conductivity at the arbitrary position is changed by changing at least one of the material of the contact portion between the substrate or the integrated package at an arbitrary position and the material of the contact portion between the second heating part at an arbitrary position. Mounting device.

6. In the mounting device according to claim 1 or 2, Including a first heating part and a second heating part, Including a first attachment and a second attachment, The stage is Supporting the first heating part and the first attachment, The first heating part is Heating the substrate through the first attachment, The pressing part is Supporting the second heating part and the second attachment, The second heating unit is a mounting device that heats the integrated package through the second attachment. **Claim 7** In the mounting device according to claim 1 or 2, the heating unit has a plurality of independently temperature-controllable heating regions, and is configured to be able to change the temperatures of the plurality of heating regions based on the distribution of the thermal conductivity in the pressing direction of the integrated package. ​

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