Mounting device and adjustment method

Abstract

To provide a mounting device that can restrain temperature variation when an integrated package having non-uniform thermal conductivity is heated, and can restrain connection failure of the integrated package to a substrate.SOLUTION: A mounting device includes a stage, a pressing unit for pressing the substrate and the integrated package, a first attachment that is supported by the stage and is in contact with either the substrate or the integrated package, a second attachment that is supported by the pressing unit and is in contact with the other of the substrate or the integrated package, a first heating unit for heating the first attachment, and a second heating unit for heating the second attachment. At least one of the first heating unit and the second heating unit has a plurality of heating regions based on a distribution of pressing direction thermal conductivity which is the thermal conductivity of the integrated package. The plurality of heating regions is configured to generate heat at different amounts of heat per unit time and per unit area.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a mounting device for mounting an integrated package on a substrate and an adjustment method for the mounting device.

Background Art

[0002] A mounting device for mounting a semiconductor chip on a substrate is known. The mounting device arranges a semiconductor chip at a predetermined position on a substrate on a stage, and connects the semiconductor chip to the substrate by pressing the semiconductor chip against the substrate in a state where bumps of the semiconductor chip are melted by heat.

[0003] In such a mounting device, when the temperature distribution of the semiconductor chip heated when connecting the semiconductor chip to the substrate is non-uniform, the bumps of the semiconductor chip vary in the molten state. As a result, the semiconductor chip may have a connection failure with the substrate, or the gap between the semiconductor chip and the substrate may become non-uniform, and the semiconductor chip may not operate normally. Therefore, a mounting device that suppresses connection failures between the substrate and the semiconductor chip, non-uniformity of the gap between the substrate and the semiconductor chip, etc. is known.

[0004] The mounting device (semiconductor manufacturing device) described in Patent Document 1 includes a bonding head that mounts the semiconductor chip on the substrate, an attachment provided on the bonding head that sucks the semiconductor chip, and a heating unit that heats the attachment. The heating unit has a first heating area and a second heating area that surrounds the first heating area in the horizontal direction. The mounting device makes the temperature distribution of the semiconductor chip uniform by independently controlling the temperatures of the first heating area and the second heating area.

Prior Art Documents

Patent Documents

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] The mounting device described in Patent Document 1 makes the temperature distribution of the semiconductor chip uniform by setting the heating temperature of a second heating area that heats a peripheral portion of the semiconductor chip where the temperature is likely to decrease due to heat dissipation higher than the heating temperature of a first heating area that heats the central portion of the semiconductor chip. However, in an integrated package in which a plurality of different semiconductor chips are molded with resin, an integrated portion of the semiconductor chips having a high thermal conductivity and a resin portion having a lower thermal conductivity than the integrated portion of the semiconductor chips are unevenly located within the integrated package. That is, in the integrated package, compared with a single semiconductor chip, the distribution of the thermal conductivity is more complicated. Therefore, in the mounting device described in Patent Document 1, it has sometimes been difficult to perform uniform heating for suppressing connection failures between the substrate and the integrated package, non-uniformity of the gap between the substrate and the integrated package, and the like.

[0007] An object of the present invention is to provide a mounting device and an adjustment method thereof that can suppress variations in temperature when heating an integrated package with non-uniform thermal conductivity and suppress connection failures of the integrated package to a substrate.

Means for Solving the Problems

[0008] The inventor of the present invention studied the configuration of a mounting device that can suppress variations in temperature when heating an integrated package with non-uniform thermal conductivity and suppress connection failures of the integrated package to a substrate. As a result of intensive studies, the inventor of the present invention conceived the following configuration.

[0009] The mounting device according to an embodiment of the present invention includes a stage on which at least one of an integrated package in which a plurality of semiconductor chips are integrated and molded and a substrate on which the integrated package is mounted is mounted, a pressing portion disposed to face the stage, relatively moving toward the stage, and pressing the substrate and the integrated package, a first attachment supported by the stage and contacting either the substrate or the integrated package from the moving direction of the pressing portion, a second attachment supported by the pressing portion and contacting the other of the substrate and the integrated package from the moving direction of the pressing portion, a first heating portion supported by the stage and heating the first attachment, and a second heating portion supported by the pressing portion and heating the second attachment.

[0010] At least one of the first heating portion and the second heating portion has a plurality of heating regions based on a distribution of a pressing direction thermal conductivity, which is the thermal conductivity of the integrated package in the pressing direction of the pressing portion. The plurality of heating regions are each configured to generate heat with a different heat generation amount per unit time and per unit area.

[0011] In the above configuration, at least one of the first heating portion and the second heating portion has a plurality of heating regions based on a distribution for each pressing direction thermal conductivity of the integrated package. Therefore, at least one of the first heating portion and the second heating portion heats the integrated package with an amount of heat based on the pressing direction thermal conductivity of the integrated package. The mounting device adjusts the amount of heat transferred from the substrate to the integrated package, which is determined by the pressing direction thermal conductivity and the temperature difference between the substrate and the integrated package, by heating with a plurality of heating regions. Thereby, it is possible to suppress variations in temperature when uniformly heating an integrated package with non-uniform thermal conductivity, and to suppress connection failures of the integrated package to the substrate.

[0012] From another perspective, it is preferable that the mounting device of the present invention includes the following configuration. The plurality of heating regions overlap respectively for each portion having a different predetermined range of pressing direction thermal conductivity in the integrated package when viewed in the pressing direction.

[0013] In the above configuration, the plurality of heating regions are configured to correspond to the regions of the pressing direction thermal conductivity in which the portion of the pressing direction thermal conductivity of the integrated package is included in a predetermined range as one region. Therefore, at least one of the first heating unit and the second heating unit can transmit an appropriate amount of heat for adjusting the temperature of each region of the pressing direction thermal conductivity by applying an amount of heat to each region of the pressing direction thermal conductivity of the integrated package. Thereby, it is possible to suppress the variation in temperature when uniformly heating an integrated package with non-uniform thermal conductivity, and to suppress the connection failure of the integrated package to the substrate.

[0014] From another perspective, it is preferable that the mounting device of the present invention includes the following configuration. The plurality of heating regions are configured to generate heat with a heat generation amount proportional to the magnitude of the pressing direction thermal conductivity of the integrated package that overlaps when viewed in the pressing direction.

[0015] In the above configuration, when the heating region contacts at least one of the substrate and the integrated package, the heating amount of the heating region of the portion overlapping with the portion where the pressing direction thermal conductivity of the integrated package is higher than that of other portions is made higher than the heating amount of the heating region overlapping with the other portions. Thereby, the mounting device can suppress a temperature drop of the substrate by heating, with a higher amount of heat, the portion where heat is more likely to be transferred from the substrate to the integrated package than the other portions. Further, the heating amount of the heating region of the portion overlapping with the portion where the pressing direction thermal conductivity of the integrated package is lower than that of other portions is made lower than the heating amount of the heating region overlapping with the other portions. Thereby, the mounting device can suppress a temperature rise of the substrate by heating, with a lower amount of heat, the portion where heat is less likely to be transferred from the substrate to the integrated package than the other portions. Thereby, it is possible to suppress variations in temperature when uniformly heating an integrated package having non-uniform thermal conductivity, and to suppress connection failures of the integrated package to the substrate.

[0016] From another aspect, it is preferable that the mounting device of the present invention includes the following configuration. The first heating unit has a single heating region that generates heat at a heat generation amount per predetermined unit time and per unit area, and heats the substrate by the single heating region that generates heat with a uniform amount of heat via the first attachment. The second heating unit has the plurality of heating regions, and heats the integrated package by the plurality of heating regions that generate heat with different amounts of heat based on the distribution of the pressing direction thermal conductivity of the integrated package via the second attachment.

[0017] In the above configuration, the integrated package through which heat is transmitted from the substrate uniformly heated by the first heating unit is heated by a plurality of heating regions of the second heating unit based on the distribution of the pressing direction thermal conductivity. The mounting device can adjust the amount of heat transferred from the substrate to the integrated package by heating the integrated package with an amount of heat based on the pressing direction thermal conductivity for each region where the pressing direction thermal conductivity of the integrated package is within a predetermined range. Thereby, it is possible to suppress variations in temperature when heating an integrated package with non-uniform thermal conductivity and suppress connection failures of the integrated package to the substrate.

[0018] From another perspective, it is preferable that the mounting device of the present invention includes the following configuration. It has a control unit that controls the second heating unit. The first attachment each has a temperature sensor at a position overlapping the plurality of heating regions when viewed in the pressing direction. The control unit controls the calorific value of each of the plurality of heating regions so that the temperature detected by the temperature sensor becomes a temperature within a predetermined range.

[0019] In the above configuration, the mounting device controls the calorific value of the plurality of heating regions so that the temperature of the first attachment that holds the substrate remains within a predetermined range. That is, the mounting device heats the substrate based on the temperature of the substrate that varies due to the difference in the pressing direction thermal conductivity of the integrated package by the plurality of heating regions, and adds an amount of heat corresponding to the amount of heat transferred from the substrate to the integrated package to the substrate. Thereby, it is possible to suppress variations in temperature when heating an integrated package with non-uniform thermal conductivity and suppress connection failures of the integrated package to the substrate.

[0020] A method for adjusting the calorific values of a first heating unit that heats a substrate and an integrated package placed on the substrate from one side in the mounting direction, and a second heating unit that has a plurality of heating regions that heat from the other side in the mounting direction.

[0021] The adjustment method heats the substrate and the integrated package by a first heating unit and a first adjustment heating region which is a heating region for adjusting the calorific value among a plurality of heating regions of the second heating unit, and adjusts the calorific value of the first adjustment heating region so that the temperature of the region of the substrate overlapping with the first adjustment heating region is included within a target temperature range when viewed in the mounting direction; heats the substrate and the integrated package by the first heating unit and the first adjustment heating region that generates heat according to the calorific value adjusted in the first temperature adjustment step, and also heats the substrate and the integrated package by the first heating unit and a second adjustment heating region which is a heating region of the second heating unit whose calorific value has not been adjusted in the first temperature adjustment step, and adjusts the calorific value of the second adjustment heating region so that the temperature of the region of the substrate overlapping with the second adjustment heating region is included within a target temperature range when viewed in the mounting direction; and a readjustment step of adjusting the calorific values of the first adjustment heating region and the second adjustment heating region so that the temperatures of the region of the substrate overlapping with the first adjustment heating region that generates heat according to the calorific value adjusted in the first temperature adjustment step and the region of the substrate overlapping with the second adjustment heating region that generates heat according to the calorific value adjusted in the second temperature adjustment step are each included within the target temperature range when viewed in the mounting direction.

[0022] In the above configuration, after individually adjusting the calorific values of the second heating unit having a plurality of heating regions by the first temperature adjustment step and the second temperature adjustment step, the readjustment step readjusts the calorific values of the plurality of heating regions whose calorific values have been adjusted in the first temperature adjustment step and the second temperature adjustment step. The adjustment method adjusts the calorific value of each heating region in consideration of the influence between the heating regions set based on the thermal conductivity in the pressing direction (mounting direction) between the substrate and the integrated package. Thereby, it is possible to suppress the variation in temperature when uniformly heating an integrated package with non-uniform thermal conductivity, and to suppress the connection failure of the integrated package to the substrate.

[0023] The technical terms used in this specification are for the purpose of defining only specific embodiments and are not intended to limit the invention by said technical terms.

[0024] As used herein, the use of "including", "comprising", "having" and their variants identifies the presence of the described features, steps, operations, elements, components, and / or their equivalents, but can include one or more of steps, operations, elements, components, and / or groups thereof.

[0025] As used herein, "attached", "connected", "coupled" and / or their equivalents are used in a broad sense and include both "direct and indirect" attachment, connection and coupling. Further, "connected" and "coupled" are not limited to physical or mechanical connections or couplings and can include direct or indirect electrical connections or couplings.

[0026] Unless otherwise defined, all terms (including technical and scientific terms) used in this specification have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0027] [Integrated Package] As used herein, an integrated package means one package in which a plurality of semiconductor chips are integrated and molded on a package substrate. The integrated package includes a 2.5D integrated package in which two or more active semiconductor chips are arranged side by side on a silicon interposer (or organic interposer) with wiring processed on a silicon substrate, and a 3D integrated package in which two or more active semiconductor chips are integrated by die stacking. The integrated package is a package in which an integrated circuit formed by heterogeneous integration is resin-molded. Note that a configuration in which a plurality of semiconductor chips are connected by a silicon bridge of the package substrate may also be used. Further, in the following embodiments, the integrated package may have any structure as long as it is one package in which a plurality of semiconductor chips are integrated and molded.

[0028] [Substrate] As used herein, the substrate means a substrate or the like on which a wiring circuit made of a material such as silicon, ceramics, or resin for mounting the integrated package is patterned. The substrate has wiring made of a conductor. The integrated circuit and the substrate are connected by welding bumps, which are protruding connection electrodes.

[0029] [Thermal Conductivity in the Pressing Direction of the Integrated Package] As used herein, the thermal conductivity in the pressing direction of the integrated package means the average thermal conductivity per unit area in the pressing direction by the pressing part of the mounting device in the stacking direction of the semiconductor chip and the silicon interposer in the integrated package. Since a plurality of silicon semiconductor chips are unevenly integrated in the integrated package, when viewed in the pressing direction, it is different between the part where the semiconductor chips are stacked and the part with only the silicon interposer. Therefore, the thermal conductivity in the pressing direction of the integrated package is unevenly distributed based on the shape and stacking direction of the semiconductor chips of the integrated package when viewed in the pressing direction. Note that in the following embodiments, the distribution of the thermal conductivity in the pressing direction of the integrated package is specified in advance by experiments, analysis, etc.

[0030] [Distribution of Thermal Conductivity in the Pressing Direction] In the following embodiments, the distribution of the thermal conductivity in the pressing direction means the position, size, and range of a region where the portion of the thermal conductivity in the pressing direction within a certain range is regarded as a region having the thermal conductivity in the pressing direction of the average value of the certain range. In the following embodiments, in the entire region of the integrated package as viewed from the pressing direction, there are a plurality of regions having different average values of the thermal conductivity in the pressing direction within a certain range. That is, in the integrated package in the present embodiment, when viewed from the pressing direction, a plurality of regions having the thermal conductivity in the pressing direction within a certain range are distributed.

[0031] [Pressing Direction] In the following embodiments, the pressing direction includes not only the direction in which the integrated package is pressed by the pressing portion that presses the integrated package but also the direction of the reaction force of the force applied to the integrated package by the pressing portion. In the following embodiments, the pressing direction is the mounting direction in the integrated package mounted on the substrate. [Advantages of the Invention]

[0032] According to an embodiment of the present invention, the mounting device and the adjustment method use at least one of the first heating unit and the second heating unit having a plurality of heating regions based on the distribution of the thermal conductivity in the pressing direction, which is the thermal conductivity of the integrated package in the moving direction of the pressing portion, to suppress the variation in temperature when heating an integrated package with non-uniform thermal conductivity and suppress the connection failure of the integrated package to the substrate. [Brief Description of the Drawings]

[0033]

Figure 1

Figure 2

Figure 3

Figure 4

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Figure 8

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Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Embodiments for Carrying Out the Invention

[0034] Hereinafter, the mounting apparatus according to the present invention will be described with reference to the drawings. In each figure, the same parts are denoted by the same reference numerals, and the description of the same parts will not be repeated. The dimensions of the constituent members in each figure do not faithfully represent the dimensions of the actual constituent members and the dimensional ratios of the respective constituent members. In the following description of the embodiments of the present invention, the X direction and the Y direction are assumed to be directions on a horizontal plane. The Y direction is a direction orthogonal to the X direction. The Z direction is a direction orthogonal to the X direction and the Y direction. In the present embodiment, the Z direction is defined as the vertical direction. However, there is no intention to limit the orientation of the positioning apparatus during use in each embodiment by this definition of the direction.

[0035] Further, in the following description, expressions such as "fix", "connect", "join", and "attach" (hereinafter, "fix" etc.) include not only the case where members are directly fixed etc., but also the case where they are fixed etc. via other members. That is, in the following description, the expressions of "fix" etc. include the meanings of direct and indirect fixing etc. of members to each other.

[0036] [Embodiment 1] <Configuration of Mounting Apparatus 1> With reference to FIGS. 1 and 2, a mounting apparatus 1 which is Embodiment 1 of the mounting apparatus according to the present invention will be described. FIG. 1 is an overall configuration diagram of the mounting apparatus 1 in Embodiment 1 of the present invention and the mounting apparatus 1A in Embodiment 2. FIG. 2 is a control block diagram of the mounting apparatus 1.

[0037] As shown in FIG. 1, the mounting apparatus 1 mounts an integrated package β on a substrate α. The mounting apparatus 1 is provided in a manufacturing apparatus such as a semiconductor manufacturing apparatus (not shown). The mounting apparatus 1 includes a stage unit 10, a pickup unit 20, and a control device 30 (see FIG. 2).

[0038] The stage unit 10 is a movable stage for positioning the substrate α at an arbitrary position on the XY plane. The stage unit 10 is supported by a frame (not shown). The stage unit 10 is arranged with the stage mounting surface 10a facing in the Z direction. The stage unit 10 has a stage driving device 11. The stage unit 10 is configured to be movable to an arbitrary position on the XY plane by the stage driving device 11 with the stage mounting surface 10a. The stage unit 10 supports a first heater 12 which is a first heating part and a first attachment 13.

[0039] The first heater 12 heats the substrate α via the first attachment 13. The first heater 12 is, for example, a pulse heater having a ceramic housing. Note that the first heater 12 includes a laser heating method that heats by a laser, a heater of an induction heating method, etc. Note that the first heater 12 may be any heating device that can heat the first attachment. The first heater 12 is configured to be able to generate heat with a first heat generation amount C1 which is a preset heat generation amount per unit time and per unit area. The first heater 12 is fixed to the stage mounting surface 10a of the stage unit 10. The first heater 12 is arranged with the heating surface facing in the Z direction. The first heater 12 is configured to be movable integrally with the stage unit 10. The heat generation amount per unit time and per unit area on the heating surface of the first heater 12 is equal at all positions. That is, the first heater 12 heats the entire surface of the heating surface equally.

[0040] The first attachment 13 holds the substrate α. The first attachment 13 is constituted by, for example, a rectangular parallelepiped made of metal. The first attachment 13 is fixed to the heating surface of the first heater 12 in a detachable state. The first attachment 13 is arranged with the first attachment holding surface 13a for holding the substrate α facing in the Z direction. The first attachment 13 has a plurality of suction holes (not shown) on the first attachment holding surface 13a. The first attachment 13 is configured to be able to suck the suction holes by a suction device (not shown). The first attachment 13 is configured to be able to adsorb and hold the substrate α on the first attachment holding surface 13a by the suction force generated in the suction holes. The first attachment 13 is configured to be movable integrally with the first heater 12 by the stage unit 10. Further, the first attachment 13 is heated by the first heater 12.

[0041] The pickup unit 20 is a unit that positions the integrated package β at an arbitrary position on the XY plane. The pickup unit 20 is supported by a frame (not shown). The pickup unit 20 is arranged with the pickup unit mounting surface 20a facing the first attachment 13. The pickup unit 20 has a pickup unit driving device 21. The pickup unit 20 is configured to be movable to an arbitrary position on the XY plane by the pickup unit driving device 21. A camera 22 for measuring the positions of the substrate α and the integrated package β is provided in the pickup unit 20. The pickup unit 20 supports a pressing unit 23, a second heater 25 which is a second heating part, and a second attachment 26.

[0042] The pressing unit 23, which is a pressing part, is a unit that moves the integrated package β in the Z direction. The pressing unit 23 is fixed to the pickup unit mounting surface 20a. The pressing unit 23 is arranged such that the pressing unit mounting surface 23a faces the first attachment 13. The pressing unit 23 is configured to be relatively movable to an arbitrary position in the Z direction with respect to the stage unit 10 by the pressing unit driving device 24, with the pressing unit mounting surface 23a facing the stage unit 10. Further, the pressing unit 23 is configured to be able to press the pressing unit mounting surface 23a against an object with a predetermined force by the pressing unit driving device 24. Also, the pressing unit 23 is configured to be movable integrally with the pickup unit 20. That is, the pressing unit 23 is configured to be able to place the integrated package β at an arbitrary position on the substrate α and press it.

[0043] The second heater 25 heats the integrated package β via the second attachment 26. The second heater 25 is, for example, a constant heater having a ceramic housing. The second heater 25 is fixed to the pressing unit mounting surface 23a. The second heater 25 is arranged with the heating surface facing the first attachment 13. The second heater 25 is configured to be movable integrally with the pressing unit 23. The second heater 25 has a plurality of heating regions.

[0044] The second attachment 26 holds the integrated package β. The second attachment 26 is constituted by, for example, a rectangular parallelepiped made of an inorganic material such as ceramics or a material such as metal. The second attachment 26 is fixed to the mounting surface of the pressing unit 23 in a detachable state. The second attachment 26 is arranged with the second attachment holding surface 26a for holding the integrated package β facing the first attachment 13. The second attachment 26 has a shape that overlaps the entire integrated package β disposed on the substrate α when viewed in the pressing direction of the pressing unit 23 in a state where the substrate α is held at a predetermined position of the first attachment 13. The second attachment 26 has suction holes (not shown) in the second attachment holding surface 26a. The second attachment 26 is configured to be able to suck the suction holes by a suction device (not shown). The second attachment 26 is configured to be able to adsorb and hold the integrated package β on the second attachment holding surface 26a by the suction force generated in the suction holes. The second attachment 26 is configured to be movable integrally with the pickup unit 20 and the pressing unit 23.

[0045] As shown in FIG. 2, the control device 30 controls the stage driving device 11, the first heater 12, the pickup unit driving device 21, the camera 22, the pressing unit driving device 24, the second heater 25, and a suction pump (not shown). Substantially, the control device 30 has a configuration in which a CPU, a ROM, a RAM, an HDD, etc. are connected by a bus. Alternatively, the control device 30 may have a configuration including a one-chip LSI or the like. Various programs and data are stored in the control device 30 to control the operations of the stage driving device 11, the first heater 12, the pickup unit driving device 21, the pressing unit driving device 24, the second heater 25, and the suction pump (not shown).

[0046] The control device 30 is electrically connected to the X-direction actuator and the Y-direction actuator of the stage driving device 11. The control device 30 is electrically connected to the X-direction actuator and the Y-direction actuator of the pickup unit driving device 21. The control device 30 is electrically connected to the Z-direction actuator of the pressing unit driving device 24. The control device 30 is electrically connected to the camera 22. The control device 30 is electrically connected to the first heater 12 and the second heater 25.

[0047] Also, the control device 30 is electrically connected to the camera 22. The control device 30 is electrically connected to the X-direction scale and the Y-direction scale included in the stage driving device 11 and the pickup unit driving device 21. The control device 30 is electrically connected to the Z-direction scale included in the pressing unit driving device 24.

[0048] The control device 30 is configured to be able to output a position control signal for positioning the first attachment 13 (see FIG. 1) mounted on the stage unit 10 to a target position with respect to the stage driving device 11. The control device 30 is configured to be able to output a position control signal for positioning the second attachment 26 mounted on the pressing unit 23 to a target position with respect to the pickup unit driving device 21 and the pressing unit driving device 24.

[0049] The control device 30 is configured to be able to output a calorific value control signal for generating heat at the first calorific value C1 with respect to the first heater 12. The control device 30 is configured to be able to output a calorific value control signal for generating heat at a predetermined calorific value with respect to a plurality of heating regions of the second heater 25.

[0050] The control device 30 is configured to be able to output a control signal for imaging the substrate α and the integrated package β with respect to the camera 22. The control device 30 is configured to be able to output a suction control signal with respect to a suction pump (not shown).

[0051] The control device 30 can acquire the X and Y coordinates of the substrate α and the integrated package β by the camera 22. The control device 30 can acquire the X and Y coordinates of the first attachment 13 and the second attachment 26 by the X-direction scale and the Y-direction scale. The control device 30 can acquire the Z coordinate of the second attachment 26 by the Z-direction scale.

[0052] The mounting device 1 configured as described above holds the substrate α by suction force when the substrate α is mounted on the first attachment 13 of the stage unit 10 from an external transfer device. The mounting device 1 holds the integrated package β by suction force by the second attachment of the pickup unit 20. The mounting device 1 adjusts the X-direction and Y-direction positions of the substrate α by the stage drive device 11 while confirming the position of the substrate α by the camera 22, and adjusts the X-direction position and Y-direction position of the integrated package β by the pickup unit drive device 21. The mounting device 1 adjusts the Z-direction position of the integrated package β by the pressing unit drive device 24 and arranges the integrated package β at a predetermined position on the substrate α.

[0053] The mounting device 1 presses the integrated package β arranged at a predetermined position on the substrate α toward the substrate α by the pressing unit drive device 24. At the same time, the mounting device 1 heats the substrate α through the first attachment 13 by the first heater 12. The mounting device 1 heats the integrated package β through the second attachment 26 by the second heater 25. The heat transmitted to the substrate α through the first attachment 13 and the heat transmitted to the integrated package β through the second attachment 26 melt the bumps β6 (see FIG. 4) of the integrated package β. In this way, the mounting device 1 connects the integrated package β to a predetermined position on the substrate α.

[0054] <Structure of Integrated Package and Pressing Direction Thermal Conductivity> Next, the structure of the integrated package β and the thermal conductivity in the pressing direction will be described with reference to FIGS. 3 and 4. FIG. 3 is a plan view of the integrated package β mounted on the substrate by the mounting devices 1, 1A, and 1B. FIG. 4 is a cross-sectional view taken along the line IV-IV in FIG. 3.

[0055] As shown in FIGS. 3 and 4, the integrated package β is an integrated package in which a first semiconductor chip β3 and a second semiconductor chip β4 are connected to a resin package substrate β1 (see FIG. 4) via a silicon interposer β2 (see FIG. 4). The integrated package β is molded by a resin β5. The surfaces of the first semiconductor chip β3 and the second semiconductor chip β4 located on the side opposite to the silicon interposer β2 are not covered by the resin β5. The package substrate β1 has bumps β6 including electrodes.

[0056] As shown in FIG. 3, the integrated package β has a first region Aβ1 in which the package substrate β1 (see FIG. 4), the silicon interposer β2 (see FIG. 4), and the first semiconductor chip β3 are laminated, a second region Aβ2 in which the package substrate β1, the silicon interposer β2, and the second semiconductor chip β4 are laminated, and a third region Aβ3 (hatched portion) in which the package substrate β1, the silicon interposer β2, and the resin β5 are laminated.

[0057] As shown in FIG. 4, the thermal conductivity Tβ1 in the pressing direction of the first region Aβ1 is assumed to be the highest in the integrated package β. When heat is transferred from the second heater 25 located on the pressing unit 23 side to the first region Aβ1, the bumps β6 located in the first region Aβ1 are most likely to be heated and most likely to cool (difficult to store heat). Also, when heat is transferred from the first heater 12 located on the stage unit 10 side to the first region Aβ1, the bumps β6 located in the first region Aβ1 are least likely to be heated and most likely to cool (difficult to store heat). Therefore, if heating is not continued, the first region Aβ1 is likely to become lower than the temperature required for mounting on the substrate α.

[0058] The pressing-direction thermal conductivity Tβ2 of the second region Aβ2 shall be the second highest in the integrated package β after the first region Aβ1.

[0059] The pressing-direction thermal conductivity Tβ3 of the third region Aβ3 shall be the lowest in the integrated package β. When heat is transferred from the second heater 25 located on the pressing unit 23 side to the third region Aβ3, the bump β6 located in the third region Aβ3 is the most difficult to heat up and the most difficult to cool down (easy to store heat). Also, when heat is transferred from the first heater 12 located on the stage unit 10 side to the third region Aβ3, the bump β6 located in the third region Aβ3 is the easiest to heat up and the most difficult to cool down (easy to store heat). Therefore, the third region Aβ3 is likely to become higher than the said temperature when heating continues.

[0060] <Heating Region of the Second Heating Unit> Next, with reference to FIGS. 2, 5 to 8, the first heating region A21, the second heating region A22, and the third heating region A23 of the second heater 25 will be described. FIG. 5 is a plan view of the second heater 25. FIG. 6 is a cross-sectional view taken along the arrow VI-VI in FIG. 5 and a cross-sectional view taken along the arrow IV-IV in FIG. 3. FIG. 7 is a partial cross-sectional view of the jig T. FIG. 8 is a partial cross-sectional view of the mounting device 1 and the jig T in a state where the jig T is held by the mounting device 1. In the following description, it is assumed that an integrated package β is arranged at a predetermined position on the substrate α.

[0061] As shown in FIGS. 5 and 6, the second heater 25 has a shape that overlaps at least a part of the integrated package β arranged on the substrate α when viewed in the pressing direction of the pressing unit 23 in a state where the substrate α is held at a predetermined position of the first attachment 13. In the present embodiment, the second heater 25 overlaps the entire integrated package β when viewed in the pressing direction. Also, the second heater 25 is configured to be able to receive the force applied to the integrated package β by the pressing unit 23.

[0062] The second heater 25 has a plurality of heating regions. The second heater 25 has, as the plurality of heating regions, a first heating region A21, a second heating region A22, and a third heating region A23 based on the distribution of the pressing direction thermal conductivity of the integrated package β when viewed in the pressing direction. The first heating region A21, the second heating region A22, and the third heating region A23 are configured such that the calorific value per unit time and per unit area can be independently changed. The first heating region A21 generates heat at a first heating region calorific value C21, which is the calorific value per unit time and per unit area (see FIG. 2). The second heating region A22 generates heat at a second heating region calorific value C22, which is the calorific value per unit time and per unit area (see FIG. 2). The third heating region A23 generates heat at a third heating region calorific value C23, which is the calorific value per unit time and per unit area (see FIG. 2).

[0063] As shown in FIG. 6, the first heating region A21 overlaps at least a part of the first region Aβ1 of the integrated package β when viewed in the pressing direction. The second heating region A22 overlaps at least a part of the second region Aβ2 of the integrated package β when viewed in the pressing direction. The third heating region A23 overlaps the third region Aβ3 when viewed in the pressing direction. In the present embodiment, the first heating region A21 overlaps the entire first region Aβ1 and has substantially the same shape as the first region Aβ1 when viewed in the pressing direction. In the present embodiment, the second heating region A22 overlaps the entire second region Aβ2 and has substantially the same shape as the second region Aβ2 when viewed in the pressing direction. In the present embodiment, the third heating region A23 overlaps the entire third region Aβ3 when viewed in the pressing direction.

[0064] As shown in FIG. 2, the first heating region A21, the second heating region A22, and the third heating region A23 are electrically connected to the control device 30. The first heating region A21 is configured to generate heat, for example, at the first heating region calorific value C21 based on the heat generation control signal from the control device 30. The second heating region A22 is configured to generate heat, for example, at the second heating region calorific value C22 based on the heat generation control signal from the control device 30. The third heating region A23 is configured to generate heat, for example, at the third heating region calorific value C23 based on the heat generation control signal from the control device 30.

[0065] Next, with reference to FIGS. 7 and 8, the setting of the heating amounts of the first heating region A21, the second heating region A22, and the third heating region A23 will be described. The calorific values of the first heating region A21, the second heating region A22, and the third heating region A23 are determined by temperature measurement using the jig T.

[0066] As shown in FIG. 7, the jig T includes a substrate α, an integrated package β, a first jig temperature sensor γ1, a second jig temperature sensor γ2, and a third jig temperature sensor γ3. The integrated package β is mounted on the substrate α of the jig T. Further, the jig T has a first jig temperature sensor γ1, a second jig temperature sensor γ2, and a third jig temperature sensor γ3 between the substrate α and the integrated package β.

[0067] As shown in FIG. 8, the first jig temperature sensor γ1 is positioned so as to overlap the first region Aβ1 when viewed in the pressing direction. That is, the first jig temperature sensor γ1 detects the temperature between the substrate α and the integrated package β in the first region Aβ1 when viewed in the pressing direction. The second jig temperature sensor γ2 is positioned so as to overlap the second region Aβ2 when viewed in the pressing direction. That is, the second jig temperature sensor γ2 detects the temperature between the substrate α and the integrated package β in the second region Aβ2 when viewed in the pressing direction. The third jig temperature sensor γ3 is positioned so as to overlap the third region Aβ3 when viewed in the pressing direction. That is, the third jig temperature sensor γ3 detects the temperature between the substrate α and the integrated package β in the third region Aβ3 when viewed in the pressing direction.

[0068] The jig T is pressed by a pressing unit 23 via a second attachment 26 while being mounted on the first attachment 13 of the mounting device 1. Further, the jig T is heated by a first heater 12 that generates heat at a first calorific value C1, and is also heated by the first heating region A21, the second heating region A22, and the third heating region A23 of the second heater 25 (see FIG. 8). At this time, the first heating region A21, the second heating region A22, and the third heating region A23 are generating heat at a second calorific value C2.

[0069] The heat from the first heater 12 transmitted to the substrate α is transmitted to the integrated package β at a rate proportional to the through-thickness thermal conductivity Tβ1 (see FIG. 7) of the first region Aβ1, the through-thickness thermal conductivity Tβ2 (see FIG. 7) of the second region Aβ2, and the through-thickness thermal conductivity Tβ3 (see FIG. 7) of the third region Aβ3. Among the portions of the substrate α of the jig T that overlap with the first region Aβ1 having the highest through-thickness thermal conductivity Tβ1 when viewed in the pressing direction, heat is most easily transmitted to the integrated package β. That is, when viewed in the pressing direction, the heat transmitted to the portion of the substrate α that overlaps with the first region Aβ1 easily escapes from the substrate α to the integrated package β. Among the portions of the substrate α of the jig T that overlap with the third region Aβ3 having the lowest through-thickness thermal conductivity Tβ3 when viewed in the pressing direction, heat is least easily transmitted to the integrated package β. That is, when viewed in the pressing direction, the heat transmitted to the portion of the substrate α that overlaps with the third region Aβ3 hardly escapes from the substrate α to the integrated package β.

[0070] Also, the heat from the first heater 12 transmitted to the substrate α is transmitted to the integrated package β at a rate proportional to the temperature difference between the first region Aβ1 and the substrate α, the temperature difference between the second region Aβ2 and the substrate α, and the temperature difference between the third region Aβ3 and the substrate α. Among the portions of the substrate α of the jig T that overlap with the first region Aβ1 having the highest through-thickness thermal conductivity Tβ1 when viewed in the pressing direction, when the temperature difference with the first region Aβ1 is reduced, it becomes difficult to transmit heat to the integrated package β. Among the portions of the substrate α of the jig T that overlap with the third region Aβ3 having the lowest through-thickness thermal conductivity Tβ3 when viewed in the pressing direction, when the temperature difference with the third region Aβ3 is increased, it becomes easier to transmit heat to the integrated package β.

[0071] The jig T heats each part of the integrated package β to different temperatures by the first heating region A21, the second heating region A22, and the third heating region A23, so that the amount of heat corresponding to the temperature difference generated between the substrate α and each part of the integrated package β is transmitted from the substrate α to the integrated package β. As a result, the temperature between the substrate α of the jig T and the integrated package β changes. Therefore, the second heater 25 can adjust the temperature between the substrate α and the integrated package β by adjusting the amount of heat generation for each heating region.

[0072] When mounting the integrated package β on the substrate α, connection failures can be suppressed by uniformly melting the pump that connects the substrate α and the integrated package β. Therefore, the heat generation amounts C21, C22, and C23 in the first heating region, second heating region, and third heating region in the second heater 25 are determined to be heat generation amounts such that the temperatures of the first region Aβ1 detected by the first jig temperature sensor γ1 of the jig T, the temperature of the second region Aβ2 detected by the second jig temperature sensor γ2, and the temperature of the third region Aβ3 detected by the third jig temperature sensor γ3 are within a predetermined range.

[0073] When viewed in the pressing direction, the portion of the substrate α that overlaps with the first region Aβ1, which has the highest thermal conductivity in the pressing direction, is heated by the first heating region A21 that generates heat at a first heating region heat generation amount C21 higher than the second heat generation amount C2, thereby reducing the temperature difference between the substrate α and the integrated package β. Therefore, when viewed in the pressing direction, the temperature of the portion of the substrate α that overlaps with the first region Aβ1 is likely to rise because the amount of heat transferred to the first region Aβ1 is suppressed. Also, when viewed in the pressing direction, the portion of the substrate α that overlaps with the third region Aβ3, which has the lowest thermal conductivity in the pressing direction, is heated by the third heating region A23 that generates heat at a third heating region heat generation amount C23 lower than the second heat generation amount C2, thereby increasing the temperature difference between the substrate α and the integrated package β. Therefore, when viewed in the pressing direction, the temperature of the portion of the substrate α that overlaps with the third region Aβ3 is unlikely to rise because the amount of heat transferred to the third region Aβ3 is increased. Thus, the mounting apparatus 1 can adjust the temperature between the substrate α and the integrated package β within a predetermined range by adjusting the heat generation amounts of the first heating region A21, the second heating region A22, and the third heating region A23.

[0074] A method for adjusting the temperature (heat generation amount) of each heating region using the jig T by the control device 30 will be specifically described. The control device 30 is electrically connected to the jig T and can acquire the temperature of the first region Aβ1 detected by the first jig temperature sensor γ1 of the jig T, the temperature of the second region Aβ2 detected by the second jig temperature sensor γ2, and the temperature of the third region Aβ3 detected by the third jig temperature sensor γ3. Note that the temperature sensor for measuring the temperature of each heating region may be disposed in the second attachment 26.

[0075] As a first-stage temperature adjustment process, the control device 30 heats the jig T with the first adjustment heating area by designating one of the heating areas of the first heater 12 and the second heater 25 as the first adjustment heating area. For example, the control device 30 heats the jig T with the first heater 12 and the first heating area A21, which is the first adjustment heating area of the second heater 25. The control device 30 adjusts the calorific value of the first heater 12 and the calorific value of the first heating area A21 of the second heater 25 so that the temperature of the first area Aβ1 detected by the first jig temperature sensor γ1 of the jig T is within the target temperature range of the first area Aβ1.

[0076] As a second-stage temperature adjustment process, while heating the first heating area A21 of the second heater 25 and the first heater 12, whose calorific values were adjusted as the first adjustment heating area in the first-stage temperature adjustment process, with the adjusted calorific values, the control device 30 heats the jig T with the second adjustment heating area by designating the heating area of the second heater 25, whose calorific value was not adjusted in the first-stage temperature adjustment process, as the second adjustment heating area. For example, the control device 30 heats the jig T with the second heating area A22 of the second heater 25 as the second adjustment heating area. The control device 30 adjusts the calorific value of the second heating area A22 of the second heater 25 so that the temperature of the second area Aβ2 detected by the second jig temperature sensor γ2 of the jig T is within the target temperature range of the second area Aβ2.

[0077] As a readjustment process, while heating the first heater 12, the control device 30 heats the first heating area A21 of the second heater 25 with the calorific value adjusted in the first-stage temperature adjustment process, and heats the second heating area A22 of the second heater 25 with the calorific value adjusted in the second-stage temperature adjustment process. Furthermore, the control device 30 readjusts the calorific value of the first heating area A21 and the calorific value of the second heating area A22 of the second heater 25 so that the temperature of the first area Aβ1 detected by the first jig temperature sensor γ1 is within the target temperature range of the first area Aβ1 and the temperature of the second area Aβ2 detected by the second jig temperature sensor γ2 is within the target temperature range of the second area Aβ2.

[0078] In this way, after the control device 30 performs the primary temperature adjustment process of adjusting the calorific value by using one of the heating areas as the first adjustment heating area among the respective heating areas, the control device 30 performs the secondary adjustment process of adjusting the calorific value by using the other heating areas whose calorific values have not been adjusted in the primary temperature adjustment process as the second adjustment heating areas. Further, the control device 30 readjusts the calorific values of the respective heating areas so that the temperatures of the areas heated by the respective adjustment heating areas whose calorific values have been adjusted in the primary temperature adjustment process and the secondary temperature adjustment process are included within the target temperature ranges of the respective areas. Thereby, the calorific values of the respective heating areas can be adjusted in consideration of the influence of the other heating areas.

[0079] From the above, the first heating area A21 is controlled to generate heat with a first heating area calorific value C21 that is larger than the second heating area calorific value C22 of the second heating area A22 and the third heating area calorific value C23 of the third heating area A23. The second heating area A22 is controlled to generate heat with a second heating area calorific value C22 that is larger than the third heating area calorific value C23 of the third heating area A23. The third heating area A23 is controlled to generate heat with a third heating area calorific value C23 that is smaller than the first heating area calorific value C21 of the first heating area A21 and the second heating area calorific value C22 of the second heating area A22.

[0080] The mounting device 1 configured in this way makes the temperature difference between the substrate α and the first area Aβ1 smaller than that of the other areas, and suppresses the amount of heat transferred from the substrate α to the integrated package β. Further, the mounting device 1 makes the temperature difference between the substrate α and the third area Aβ3 larger than that of the other areas, and increases the amount of heat transferred from the substrate α to the integrated package β. In this way, the mounting device 1 adjusts the calorific values of the first heating area A21, the second heating area A22, and the third heating area A23 based on the distribution of the pressing direction thermal conductivity of the integrated package β, thereby suppressing the variation in the temperature distribution between the substrate α and the integrated package β and suppressing the connection failure of the integrated package β to the substrate α.

[0081] <Mounting of Integrated Package> Next, the mounting of the integrated package β on the substrate α by the mounting apparatus 1 will be described with reference to FIGS. 9 and 10. FIG. 9 is a partial cross-sectional view of the mounting apparatus 1 and the integrated package β in a state where the substrate α and the integrated package β are held. FIG. 10 is a cross-sectional view of the mounting apparatus 1 and the integrated package β in a state where the integrated package β is disposed on the substrate α in Embodiment 1. Note that the mounting apparatus 1 controls each part according to a control signal from the control device 30.

[0082] As shown in FIG. 9, the substrate α is mounted on the first attachment 13 by an external transfer device (not shown) in the mounting apparatus 1. The mounting apparatus 1 sucks and holds the substrate α by the first attachment 13. The substrate α is held at a predetermined position of the first attachment 13.

[0083] The mounting apparatus 1 sucks and holds the integrated package β at a predetermined standby position via the second attachment 26 by a pressing unit 23 moved by a pickup unit driving device 21. The integrated package β is held at a predetermined position of the second attachment 26. At this time, the first heating region A21 of the second heater 25 holding the second attachment 26 overlaps the first region Aβ1 of the integrated package β when viewed in the pressing direction. The second heating region A22 of the second heater 25 overlaps the second region Aβ2 of the integrated package β when viewed in the pressing direction. The third heating region A23 of the second heater 25 overlaps the third region Aβ3 of the integrated package β when viewed in the pressing direction.

[0084] As shown in FIG. 10, the mounting apparatus 1 disposes the integrated package β on the substrate α mounted on the first attachment 13 by the pressing unit 23. At this time, the integrated package β is held by the second attachment 26 in a state where the bumps β6 of the integrated package β are in contact with the electrodes on the substrate α.

[0085] The mounting device 1 heats the first heater 12 with a first calorific value C1 in order to melt the bump β6. At the same time, in the second heater 25, the mounting device 1 causes the first heating region A21 to generate heat with a first heating region calorific value C21, the second heating region A22 to generate heat with a second heating region calorific value C22, and the third heating region A23 to generate heat with a third heating region calorific value C23.

[0086] In the substrate α, heat from the heating surface of the first heater 12 is uniformly transmitted via the first attachment 13. In the integrated package β, heat from the first heating region A21, the second heating region A22, and the third heating region A23 is transmitted via the second attachment 26. At the same time, the mounting device 1 presses the integrated package β toward the substrate α with a predetermined external force by the pressing unit 23. Note that the temperature of the first heater 12 is higher than the maximum temperature of the second heater 25.

[0087] When viewed in the pressing direction, the heat from the first heater 12 transmitted to the portion overlapping the first region Aβ1 of the substrate α is transmitted to the first region Aβ1 of the integrated package β based on the pressing direction thermal conductivity Tβ1 of the first region Aβ1 and the temperature difference between the first region Aβ1 and the substrate α (see FIG. 6). When viewed in the pressing direction, the heat from the first heater 12 transmitted to the portion overlapping the second region Aβ2 of the substrate α is transmitted to the second region Aβ2 of the integrated package β based on the pressing direction thermal conductivity Tβ2 of the second region Aβ2 and the temperature difference between the second region Aβ2 and the substrate α (see FIG. 6). When viewed in the pressing direction, the heat from the first heater 12 transmitted to the portion overlapping the third region Aβ3 of the substrate α is transmitted to the third region Aβ3 of the integrated package β based on the pressing direction thermal conductivity Tβ3 of the third region Aβ3 and the temperature difference between the third region Aβ3 and the substrate α (see FIG. 6).

[0088] Of the substrate α, the heat transmitted to the portion overlapping with the first region Aβ1 when viewed in the pressing direction is transmitted in the order of the bump β6 located in the first region Aβ1 of the integrated package β, a part of the package substrate β1, a part of the silicon interposer β2, and the first semiconductor chip β3 through the electrodes of the substrate α and the like. Of the substrate α, the heat transmitted to the portion overlapping with the second region Aβ2 when viewed in the pressing direction is transmitted in the order of the bump β6 located in the second region Aβ2 of the integrated package β, a part of the package substrate β1, a part of the silicon interposer β2, and the second semiconductor chip β4 through the electrodes of the substrate α and the like. Of the substrate α, the heat transmitted to the portion overlapping with the third region Aβ3 when viewed in the pressing direction is transmitted in the order of the bump β6 located in the third region Aβ3 of the integrated package β, a part of the package substrate β1, a part of the silicon interposer β2, and the resin β5 through the electrodes of the substrate α and the like.

[0089] In the first region Aβ1 of the integrated package β, heat from the first heating region A21 that generates heat at the first heating region heat generation amount C21 (see FIG. 2) is transmitted through the second attachment 26. The first region Aβ1 is heated to a higher temperature than the second region Aβ2 and the third region Aβ3. That is, the temperature difference between the first region Aβ1 and the substrate α is the smallest. In the second region Aβ2 of the integrated package β, heat from the second heating region A22 that generates heat at the second heating region heat generation amount C22 (see FIG. 2) is transmitted through the second attachment 26. The second region Aβ2 is heated to a lower temperature than the first region Aβ1. That is, the temperature difference between the second region Aβ2 and the substrate α is the second smallest after the first region Aβ1. In the third region Aβ3 of the integrated package β, heat from the third heating region A23 that generates heat at the third heating region heat generation amount C23 (see FIG. 2) is transmitted through the second attachment 26. The third region Aβ3 is heated to a lower temperature than the second region Aβ2. That is, the temperature difference between the third region Aβ3 and the substrate α is the largest.

[0090] The portion of the substrate α in contact with the first region Aβ1 that is heated to the highest temperature by the first heating region A21 has a small temperature difference from the first region Aβ1, so the amount of heat transferred to the integrated package β is smaller than that of other portions of the substrate α. The portion of the substrate α in contact with the third region Aβ3 having the lowest through-plane thermal conductivity has a large temperature difference from the third region Aβ3, so the amount of heat transferred to the integrated package β is larger than that of other portions of the substrate α. The mounting device 1 adjusts the amount of heat transferred from the substrate α to the integrated package β by adjusting the heat generation amounts of the first heating region A21, the second heating region A22, and the third heating region A23. That is, the mounting device 1 adjusts, by means of the second heater 25, the ease of heat transfer of the first heater 12 from the substrate α to the integrated package β. Thereby, the temperature between the substrate α and the integrated package β can be maintained within a predetermined range.

[0091] The integrated package β heated by the first heater 12 and the second heater 25 and pressed toward the substrate α by the pressing unit 23 contacts the electrode of the substrate α in a state where the bump β6 is melted.

[0092] When a predetermined time has elapsed since the start of heating by the first heater 12 and the second heater 25 and pressing by the pressing unit 23, the mounting device 1 stops the heating by the first heater 12 and the second heater 25. Further, the mounting device 1 stops the pressing by the pressing unit 23 after a predetermined time has elapsed since the heating by the first heater 12 and the second heater 25 is stopped.

[0093] In this way, since the mounting device 1 heats the first heating region A21, the second heating region A22, and the third heating region A23 divided based on the first region Aβ1, the second region Aβ2, and the third region Aβ3 of the integrated package β at temperatures based on the through-plane thermal conductivity of the integrated package β, it is possible to suppress changes in the temperature distribution of the substrate α due to the influence of not only the shape of the integrated package β but also the internal structure of the integrated package β. Thereby, it is possible to suppress variations in temperature when heating the integrated package β with non-uniform thermal conductivity and to suppress connection failures of the integrated package β to the substrate α.

[0094] In the mounting device 1, when the integrated package β is heated by the first heating region A21, the second heating region A22, and the third heating region A23 of the second heater 25, and the substrate α is not heated by the first heater 12, it is necessary to increase the temperature of the second heater 25 in order to heat the bump β6 that is far from the second heater 25. In this case, the second attachment 26 heated by the second heater 25 may generate a thermal shock inside the attachment due to an increase in the temperature of the first heating region A21, the second heating region A22, and the third heating region A23 of the second heater 25 and the temperature difference between the regions, and distortion or the like may occur in the second attachment.

[0095] Further, when the integrated package β is heated by the second heater 25 and the substrate α is heated to a predetermined temperature by the first heater 12 configured by a constant heater that constantly heats the substrate α, the flux, resin adhesive, etc. applied to the electrodes of the substrate α may be deteriorated by heat. Also, when heating at a temperature at which the flux, resin adhesive, etc. applied to the substrate α do not deteriorate, it takes time until the substrate α and the integrated package β are welded by the bump β6, resulting in a decrease in production efficiency.

[0096] Therefore, by the first heater 12 configured by a pulse heater having a forced cooling function, the substrate α is rapidly heated to a predetermined temperature for a predetermined time and then rapidly cooled, thereby suppressing the deterioration of the flux, resin adhesive, etc. applied to the substrate α. Also, by heating the bump β6 by the second heater 12, the set temperature of the second heater 25 can be lowered, and the thermal shock of the second attachment can be suppressed.

[0097] [Embodiment 2] Hereinafter, with reference to FIGS. 1, 11 to 13, the mounting device 1A which is Embodiment 2 according to the present invention will be described. FIG. 11 is a plan view of the first heater 12A. FIG. 12 is a cross-sectional view taken along XII-XII in FIG. 11 and a cross-sectional view of the substrate α and the integrated package β. FIG. 13 is a control block diagram of the mounting device 1A.

[0098] The configuration of the mounting device 1A is different from that of the first heater 12 and the second heater 25 of the mounting device 1. In the following embodiments, the same components as those in the first embodiment are denoted by the same reference numerals and the description thereof is omitted, and only the differences from the first embodiment are described.

[0099] <Configuration of the mounting device 1A> As shown in FIG. 1, the mounting device 1A includes a stage unit 10, a pickup unit 20, and a control device 30 (see FIG. 13). The stage unit 10 supports a first heater 12A, which is a first heating unit, and a first attachment 13. The pickup unit 20 supports a pressing unit 23, a second heater 25A, and a second attachment 26.

[0100] As shown in FIG. 12, the first heater 12A, which is a first heating unit, heats the substrate α via the first attachment 13. The first heater 12A is, for example, a constant heater having a ceramic housing. The first heater 12A is fixed to the stage mounting surface 10a of the stage unit 10. The first heater 12A is arranged with its heating surface facing in the Z direction. The first heater 12A is configured to be movable integrally with the stage unit 10. The first heater 12A has a plurality of heating regions.

[0101] The second heater 25A, which is a second heating unit, heats the integrated package β via the second attachment 26. The second heater 25A is, for example, a constant heater having a ceramic housing. The second heater 25A is fixed to the pressing unit mounting surface 23a. The second heater 25A is arranged with its heating surface facing the first attachment 13. The second heater 25A is configured to be movable integrally with the pressing unit 23. The second heater 25 has a plurality of heating regions. The heat generation amount per unit time and per unit area on the heating surface of the second heater 25A is equal at all positions. That is, the second heater 25A heats the entire surface of the heating surface equally.

[0102] As shown in FIG. 13, the control device 30A is configured to be able to output a calorific value control signal for causing the second heater 25 to generate heat at a first calorific value C1. The control device 30A is configured to be able to output a calorific value control signal for causing the plurality of heating regions of the first heater 12A to generate heat at a predetermined calorific value.

[0103] <Heating Region of the First Heating Unit> Using FIG. 12, the first heating region A11, the second heating region A12, and the third heating region A13 of the first heater 12A will be described. The first heater 12A has a shape that overlaps at least a part of the integrated package β disposed on the substrate α when viewed in the pressing direction in a state where the substrate α is held at a predetermined position of the first attachment 13. In the present embodiment, the first heater 12A overlaps the entire integrated package β when viewed in the pressing direction. Further, the first heater 12A is configured to be able to receive the force applied to the integrated package β by the pressing unit 23.

[0104] The heating region of the first heater 12A is divided into a plurality of heating regions. The first heater 12A has, as the plurality of heating regions, a first heating region A11, a second heating region A12, and a third heating region A13 based on the distribution of the thermal conductivity in the pressing direction of the integrated package β when viewed in the pressing direction. The first heating region A11, the second heating region A12, and the third heating region A13 are each configured to be able to independently change the calorific value per unit time and per unit area. The first heating region A11 generates heat at a first heating region calorific value C11 (see FIG. 13), which is the calorific value per unit time and per unit area. The second heating region A12 generates heat at a second heating region calorific value C12 (see FIG. 13), which is the calorific value per unit time and per unit area. The third heating region A13 generates heat at a third heating region calorific value C13 (see FIG. 13), which is the calorific value per unit time and per unit area.

[0105] The first heating region A11 overlaps at least a part of the first region Aβ1 of the integrated package β when viewed in the pressing direction. The second heating region A12 overlaps at least a part of the second region Aβ2 of the integrated package β when viewed in the pressing direction. The third heating region A13 overlaps the third region Aβ3 when viewed in the pressing direction. In the present embodiment, the first heating region A11 overlaps the entire first region Aβ1 of the integrated package β when viewed in the pressing direction and has substantially the same shape as the first region Aβ1. In the present embodiment, the second heating region A12 overlaps the entire second region Aβ2 of the integrated package β when viewed in the pressing direction and has substantially the same shape as the second region Aβ2. In the present embodiment, the third heating region A13 overlaps the entire third region Aβ3 of the integrated package β when viewed in the pressing direction.

[0106] As shown in FIG. 13, the first heating region A21, the second heating region A12, and the third heating region A13 are electrically connected to the control device 30A. The first heating region A11 is configured to generate heat, for example, with a first heating region heat generation amount C11, based on a heat generation control signal from the control device 30. The second heating region A12 is configured to generate heat, for example, with a second heating region heat generation amount C12, based on a heat generation control signal from the control device 30A. The third heating region A13 is configured to generate heat, for example, with a third heating region heat generation amount C13, based on a heat generation control signal from the control device 30A.

[0107] Next, with reference to FIG. 14, the setting of the heating amounts of the first heating region A11, the second heating region A12, and the third heating region A13 will be described. FIG. 14 is a partial cross-sectional view of the mounting device 1A and the jig T in a state where the jig T is held by the mounting device 1A according to Embodiment 2 of the present invention. The heat generation amounts of the first heating region A11, the second heating region A12, and the third heating region A13 are determined by temperature measurement using the jig T. Note that the minimum temperature of the first heater 12A is higher than the temperature of the second heater 25A.

[0108] As shown in FIG. 14, in the jig T, each part of the substrate α is heated to a different temperature by the first heating region A11, the second heating region A12, and the third heating region A13, so that the amount of heat transferred from the substrate α to the integrated package β is adjusted. Thereby, the temperature between the substrate α and the integrated package β of the jig T changes. Therefore, the first heater 12A can adjust the temperature between the substrate α and the integrated package β by adjusting the calorific value for each heating region.

[0109] The calorific value C11 of the first heating region, the calorific value C12 of the second heating region, and the calorific value C13 of the third heating region in the first heater 12A are determined to be calorific values in which the temperature of the first region Aβ1 detected by the first jig temperature sensor γ1 of the jig T, the temperature of the second region Aβ2 detected by the second jig temperature sensor γ2, and the temperature of the third region Aβ3 detected by the third jig temperature sensor γ3 are included within a predetermined range.

[0110] The jig T is pressed by the pressing unit 23 via the second attachment 26 while being mounted on the first attachment 13 of the mounting device 1. Further, the jig T is heated by the second heater 25 that generates heat at the second calorific value C2 (see FIG. 13), and is also heated by the first heating region A11, the second heating region A12, and the third heating region A13 of the first heater 12A. At this time, the first heating region A11, the second heating region A12, and the third heating region A13 are generating heat at the first calorific value C1. The amount of heat transferred from the portion of the substrate α heated by the first heating region A11 to the first region Aβ1 is larger than the amount of heat transferred from the portion of the substrate α heated by the other heating regions to the integrated package β. Also, the amount of heat transferred from the portion of the substrate α heated by the third heating region A13 to the third region Aβ3 is smaller than the amount of heat transferred from the portion of the substrate α heated by the other heating regions to the integrated package β.

[0111] When viewed in the pressing direction, the amount of heat transferred from the first heating region A11 to the portion of the substrate α overlapping with the first region Aβ1 having the highest thermal conductivity in the pressing direction increases by being heated by the first heating region A11 that generates heat at a first heating region heat generation amount C11 (see FIG. 13) higher than the first heat generation amount C1. Therefore, when viewed in the pressing direction, the temperature of the portion of the substrate α overlapping with the first region Aβ1 is likely to rise because the difference between the amount of heat transferred from the substrate α to the integrated package β and the amount of heat transferred from the first heating region A11 to the substrate α becomes large. Also, when viewed in the pressing direction, the amount of heat transferred from the third heating region A13 to the portion of the substrate α overlapping with the third region Aβ3 having the lowest thermal conductivity in the pressing direction decreases by being heated by the third heating region A13 that generates heat at a third heating region heat generation amount C13 (see FIG. 13) lower than the first heat generation amount C1. Therefore, when viewed in the pressing direction, the temperature of the portion of the substrate α overlapping with the third region Aβ3 is less likely to rise because the difference between the amount of heat transferred from the substrate α to the integrated package β and the amount of heat transferred from the third heating region A13 to the substrate α becomes small. Thereby, the first heating region A11, the second heating region A12, and the third heating region A13 can adjust the temperature between the substrate α and the integrated package β within a predetermined range.

[0112] The mounting device 1A configured in this way increases the balance between the amount of heat transferred from the first heating region A11 to the portion of the substrate α overlapping with the first region Aβ1 and the amount of heat transferred from the substrate α to the first region Aβ1 when viewed in the pressing direction. Also, the mounting device 1 decreases the balance between the amount of heat transferred from the third heating region A13 to the portion of the substrate α overlapping with the third region Aβ3 and the amount of heat transferred from the substrate α to the third region Aβ3 when viewed in the pressing direction. In this way, the mounting device 1 suppresses the variation in the temperature distribution between the substrate α and the integrated package β and suppresses the connection failure of the integrated package β to the substrate α by adjusting the heat generation amounts of the first heating region A21, the second heating region A22, and the third heating region A23 based on the distribution of the thermal conductivity in the pressing direction of the integrated package β.

[0113] [Embodiment 3] Next, with reference to FIGS. 15 and 16, mounting device 1B according to Embodiment 3 of the mounting device according to the present invention will be described. FIG. 15 is a partial cross-sectional view of mounting device 1B with integrated package β arranged on substrate α by mounting device 1B in Embodiment 3 of the present invention. FIG. 16 is a control block diagram of mounting device 1B. Mounting device 1B is different from mounting device 1 in that first attachment 13B has first temperature sensor 27a, second temperature sensor 27b, and third temperature sensor 27c.

[0114] <Configuration of Mounting Device 1B> As shown in FIG. 15, mounting device 1B includes stage unit 10, pickup unit 20, and control device 30B (see FIG. 16).

[0115] Stage unit 10 supports first heater 12, which is a first heating unit, and first attachment 13B.

[0116] First attachment 13B has first temperature sensor 27a, second temperature sensor 27b, and third temperature sensor 27c. First temperature sensor 27a is positioned so as to overlap first region Aβ1 of integrated package β disposed on substrate α held at a predetermined position of first attachment 13B when viewed in the pressing direction. Second temperature sensor 27b is positioned so as to overlap second region Aβ2 of integrated package β disposed on substrate α when viewed in the pressing direction. Third temperature sensor 27c is positioned so as to overlap third region Aβ3 of integrated package β disposed on substrate α when viewed in the pressing direction.

[0117] First temperature sensor 27a can measure the temperature of the portion of substrate α that overlaps first region Aβ1 when viewed in the pressing direction. Second temperature sensor 27b can measure the temperature of the portion of substrate α that overlaps second region Aβ2 when viewed in the pressing direction. Third temperature sensor 27c can measure the temperature of the portion of substrate α that overlaps third region Aβ3 when viewed in the pressing direction.

[0118] As shown in FIG. 16, the control device 30B stores various programs and data for controlling the operation of the second heater 25 based on the detected temperatures of the first temperature sensor 27a, the second temperature sensor 27b, and the third temperature sensor 27c.

[0119] The control device 30B is electrically connected to the first temperature sensor 27a, the second temperature sensor 27b, and the third temperature sensor 27c.

[0120] The control device 30B is configured to be able to output a temperature control signal based on the detected temperature of the first temperature sensor 27a for the first heating region A21. The control device 30B is configured to be able to output a temperature control signal based on the detected temperature of the second temperature sensor 27b for the second heating region A22. The control device 30B is configured to be able to output a temperature control signal based on the detected temperature of the third heating region A23 for the third heating region A23.

[0121] When the mounting device 1B sets the heating amounts of the first heating region A21, the second heating region A22, and the third heating region A23, instead of the first jig temperature sensor γ1 (see FIG. 7), the second jig temperature sensor γ2 (see FIG. 7), and the third jig temperature sensor γ3 (see FIG. 7) of the jig T, based on the detected temperatures of the first temperature sensor 27a, the second temperature sensor 27b, and the third temperature sensor 27c, the first heating region heat generation amount C21, the second heating region heat generation amount C22, and the third heating region heat generation amount C23 can be set (see FIG. 16).

[0122] Further, the mounting device 1B can adjust the calorific value of the first heating region A21, the second heating region A22, and the third heating region A23 based on the detected temperatures of the first temperature sensor 27a, the second temperature sensor 27b, and the third temperature sensor 27c. When mounting the integrated package β on the substrate α, the mounting device 1B adjusts the calorific value of at least one of the first heating region A21, the second heating region A22, and the third heating region A23 when at least one of the detected temperatures of the first temperature sensor 27a, the second temperature sensor 27b, and the third temperature sensor 27c is not within a predetermined range, so that the detected temperatures of the second temperature sensor 27b and the third temperature sensor 27c can be within the predetermined range. Thereby, it is possible to suppress the variation in temperature when heating an integrated package with non-uniform thermal conductivity, and to suppress the connection failure of the integrated package to the substrate.

[0123] [Other Embodiments] In the above-described Embodiment 1, the mounting device 1 uniformly heats the first attachment 13 by the first heater 12 which is the first heating unit, and heats the second attachment 26 with different calorific values for each region by the first heating region A21, the second heating region A22, and the third heating region A23 of the second heater 25 which is the second heating unit. Further, in the above-described Embodiment 2, the mounting device 1A heats the first attachment 13 with different calorific values for each region by the first heating region A11, the second heating region A12, and the third heating region A13 of the first heater 12 which is the first heating unit, and uniformly heats the second attachment 26 by the second heater 25 which is the second heating unit. However, the first heating unit and the second heating unit may each have a configuration having a plurality of heating regions. The mounting device configured in this way can heat the first attachment 13 with different calorific values for each region by the first heating unit, and can heat the second attachment 26 with different calorific values for each region by the second heating unit.

[0124] In each of the above-described embodiments, the first heating regions A11 and A21 have substantially the same shape as the first region Aβ1. The second heating regions A12 and A22 have substantially the same shape as the second region Aβ2. The third heating regions A13 and A23 have substantially the same shape as the third region Aβ3. However, each heating region may have any shape as long as it can heat the corresponding region.

[0125] In the above-described embodiments, the mounting apparatuses 1, 1A, and 1B press the substrate α and the integrated package β mounted on the stage unit 10 by the pressing unit 23 that relatively moves in the direction of the stage unit 10. However, the mounting apparatus may be configured to press the substrate α and the integrated package β by moving the stage unit on which the substrate α and the integrated package β are mounted toward the pressing unit.

[0126] In the above-described embodiments, the mounting apparatuses 1, 1A, and 1B position the integrated package β with respect to the substrate α by the pickup unit 20. However, the mounting apparatus may be configured to position the substrate α with respect to the integrated package β by the stage.

[0127] Also, in the above-described embodiments, the mounting apparatuses 1, 1A, and 1B pick up the integrated package β by the pickup unit 20. However, the mounting apparatus may be configured to pick up the integrated package β by an external pickup unit and position it with respect to the substrate α.

[0128] Also, in the above-described embodiments, the mounting apparatuses 1, 1A, and 1B hold the substrate α by the first attachment 13 and hold the integrated package β by the second attachment. However, the mounting apparatus may be configured to hold the integrated package β by the first attachment and hold the substrate α by the second attachment.

[0129] Also, in the above-described Embodiment 1 and Embodiment 2, the mounting devices 1, 1A, and 1B heat the first attachment 13 with the first heater 12 which is a pulse heater, and heat the second attachment 26 with the second heater 25. However, the mounting device may be configured to heat the first attachment and the second attachment with a constant heater.

[0130] As described above, the embodiments of the present invention have been explained. However, the above-described embodiments are merely examples for implementing the present invention. Therefore, without being limited to the above-described embodiments, it is possible to appropriately modify and implement the above-described embodiments within the scope not departing from the gist thereof.

Explanation of Reference Numerals

[0131] 1, 1A, 1B Mounting device 10 Stage unit 10a Stage mounting surface 11 Stage driving device 12, 12A First heater 13, 13B First attachment 13a First attachment holding surface 20 Pickup unit 20a Pickup unit mounting surface 21 Pickup unit driving device 22 Camera 23 Pressing unit 23a Pressing unit mounting surface 24 Pressing unit driving device 25, 25A Second heater 26 Second attachment 26a Second attachment holding surface 27a First temperature sensor 27b Second temperature sensor 27c Third temperature sensor 30, 30A, 30B Control device T Jig γ1 First jig temperature sensor γ2 Second jig temperature sensor γ3 The third fixture temperature sensor α Substrate β Integrated package β1 Package substrate β2 Silicon interposer β3 The first semiconductor chip β4 The second semiconductor chip β5 Resin β6 Bump A11 The first heating region of the first heater A12 The second heating region of the first heater A13 The third heating region of the first heater A21 The first heating region of the second heater A22 The second heating region of the second heater A23 The third heating region of the second heater C1 The first calorific value C11 The calorific value of the first heating region of the first heater C12 The calorific value of the second heating region of the first heater C13 The calorific value of the third heating region of the first heater C2 The second calorific value C21 The calorific value of the first heating region of the second heater C22 The calorific value of the second heating region of the second heater C23 The calorific value of the third heating region of the second heater Aβ1 The first region of the integrated package Aβ2 The second region of the integrated package Aβ3 The third region of the integrated package Tβ1, Tβ2, Tβ3 The thermal conductivity in the pressing direction of the integrated package

Claims

1. A stage on which at least one of an integrated package in which a plurality of semiconductor chips are integrated and molded and a substrate on which the integrated package is mounted is mounted; A pressing part which is arranged to face the stage, moves relatively toward the stage, and presses the substrate and the integrated package; A first attachment which is supported by the stage and contacts either the substrate or the integrated package from the moving direction of the pressing part; A second attachment which is supported by the pressing part and contacts either the other of the substrate and the integrated package from the moving direction of the pressing part; A first heating part which is supported by the stage and heats the first attachment; A second heating part which is supported by the pressing part and heats the second attachment; A mounting device comprising: At least one of the first heating part and the second heating part Has a plurality of heating regions based on the distribution of the pressing direction thermal conductivity which is the thermal conductivity of the integrated package in the pressing direction of the pressing part, The plurality of heating regions Are each configured to generate heat with a different heat generation amount per unit time and per unit area, Mounting device.

2. In the mounting device according to Claim 1, The plurality of heating regions Are configured to overlap for each part having a pressing direction thermal conductivity within a predetermined range in the integrated package when viewed in the pressing direction, Mounting device.

3. In the mounting device according to Claim 1 or 2, The plurality of heating regions Are configured to generate heat with a heat generation amount proportional to the magnitude of the pressing direction thermal conductivity of the integrated package that overlaps when viewed in the pressing direction, Mounting device.

4. In the mounting device according to Claim 1 or 2, The first heating part Has a single heating region that generates heat with a predetermined heat generation amount per unit time and per unit area, and heats the substrate with a single heating region that generates heat with a uniform amount of heat via the first attachment, The second heating part Has the plurality of heating regions, and heats the integrated package with the plurality of heating regions that generate heat with different amounts of heat based on the distribution of the pressing direction thermal conductivity of the integrated package via the second attachment, Mounting device.

5. In the mounting device according to Claim 4, Has a control part for controlling the second heating part, The first attachment Each has a temperature sensor at a position overlapping with the plurality of heating regions when viewed in the pressing direction. The control unit controls the calorific value of each of the plurality of heating regions so that the temperature detected by the temperature sensor becomes a temperature within a predetermined range. Mounting device.

6. An adjustment method for adjusting the calorific values of a first heating unit that heats a substrate and an integrated package mounted on the substrate from one side in the mounting direction, and a second heating unit that has a plurality of heating regions for heating from the other side in the mounting direction, a first temperature adjustment step of heating the substrate and the integrated package by the first heating unit and a first adjustment heating region that is a heating region whose calorific value is adjusted among the plurality of heating regions of the second heating unit, and adjusting the calorific value of the first adjustment heating region so that the temperature of the region of the substrate overlapping with the first adjustment heating region is included within a target temperature range when viewed in the mounting direction; a second temperature adjustment step of heating the substrate and the integrated package by the first heating unit and the first adjustment heating region that generates heat with the calorific value adjusted in the first temperature adjustment step, and also heating the substrate and the integrated package by the first heating unit and a second adjustment heating region that is a heating region of the second heating unit whose calorific value was not adjusted in the first temperature adjustment step, and adjusting the calorific value of the second adjustment heating region so that the temperature of the region of the substrate overlapping with the second adjustment heating region is included within a target temperature range when viewed in the mounting direction; a readjustment step of adjusting the calorific values of the first adjustment heating region and the second adjustment heating region so that the temperature of the region of the substrate overlapping with the first adjustment heating region that generates heat with the calorific value adjusted in the first temperature adjustment step and the temperature of the region of the substrate overlapping with the second adjustment heating region that generates heat with the calorific value adjusted in the second temperature adjustment step are each included within a target temperature range. Adjustment method.

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