Substrate processing device and substrate processing method

Abstract

To provide a substrate processing device capable of supplying a sufficient quantity of radicals to a substrate while suppressing plasma damage to the substrate when performing radical processing on the substrate using plasma by microwaves, and a substrate processing method.SOLUTION: A substrate processing device which applies radical processing to a substrate comprises: a chamber which includes a main body part and a top wall part and in which the substrate is stored; a stage which supports the substrate inside of the chamber; a microwave source which is provided at an upper side of the top wall part and supplies microwaves into the chamber; a gas supply section which supplies a process gas for generating plasma by microwaves to a region immediately below the top wall part in the chamber; and a coolant supply section which includes a coolant flow passage formed in the top wall part and a coolant supply source supplying a coolant to the coolant flow passage and circulates in the coolant flow passage the coolant cooling the top wall part into a temperature capable of suppressing inactivation of radicals in the plasma. The radical processing is applied to the substrate by the radicals in the plasma generated by the microwaves.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Background Art

[0002] In the process of forming Cu wiring, prior to forming a Cu film to be a wiring, a technique of cleaning and removing a metal oxide film existing on a semiconductor wafer or an etching residue generated in a previous process with hydrogen radicals is known (for example, Patent Documents 1 and 2).

[0003] Further, Patent Document 3 discloses a cleaning method of a plasma processing apparatus that introduces microwaves into a chamber through a transmission window made of alumina and performs processing on a substrate by plasma of a processing gas. After plasma processing of a fluorine-containing gas, a technique of performing processing by plasma of a rare gas and H2 gas is disclosed.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Patent Document 2

Patent Document 3

Summary of the Invention

Problems to be Solved by the Invention

[0005] The present disclosure provides a substrate processing apparatus and a substrate processing method capable of supplying a sufficient amount of radicals to a substrate while suppressing plasma damage to the substrate when performing radical processing on the substrate using plasma generated by microwaves.

Means for Solving the Problems

[0006] A substrate processing apparatus according to an aspect of the present disclosure is a substrate processing apparatus that performs radical processing on a substrate, and includes a main body portion and a top wall portion, a chamber for accommodating the substrate, a stage for supporting the substrate in the chamber, a microwave source provided above the top wall portion for supplying microwaves into the chamber, a gas supply portion for supplying a processing gas for generating plasma by microwaves in a region immediately below the top wall portion in the chamber, a refrigerant flow path formed in the top wall portion and a refrigerant supply source for supplying refrigerant to the refrigerant flow path, and a refrigerant supply portion for flowing refrigerant through the refrigerant flow path to cool the top wall portion to a temperature capable of suppressing deactivation of radicals in the plasma, and performs radical processing on the substrate by the radicals in the plasma generated by the microwaves.

Advantages of the Invention

[0007] According to the present disclosure, there are provided a substrate processing apparatus and a substrate processing method capable of supplying a sufficient amount of radicals to a substrate while suppressing plasma damage to the substrate when performing radical processing on the substrate using plasma generated by microwaves.

Brief Description of the Drawings

[0008]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

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Figure 7

Figure 8

Figure 9

Mode for Carrying Out the Invention

[0009] Hereinafter, embodiments will be specifically described with reference to the accompanying drawings. <Configuration of Substrate Processing Apparatus> FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment. The substrate processing apparatus 100 performs hydrogen radical treatment, for example, cleaning treatment, on a substrate W such as a semiconductor wafer, and generates surface wave plasma by microwaves. The substrate processing apparatus 100 includes a chamber 1, a microwave source 2, a gas supply unit 3, an exhaust unit 4, and a refrigerant supply unit 5.

[0010] The chamber 1 has a substantially cylindrical shape, is made of a metal material such as aluminum or stainless steel, and is grounded for safety. The chamber 1 includes a main body portion 1a having an opening at the upper portion and a ceiling portion (lid) 1b provided so as to close the opening of the main body portion 1a, is configured to be airtight, and a processing space S is formed inside. On the surface of the chamber 1 including the ceiling portion (lid) 1b, when these are made of aluminum, an anodic oxide film (Al2O3 film) for preventing arcing may be formed on the surface. Further, a ceramic coat (film) such as alumina (Al2O3), yttria (Y2O3), or quartz (silica; SiO2) may be formed on the surface of the chamber 1 including the ceiling portion (lid) 1b.

[0011] In the processing space S within the chamber 1, a stage 11, which is a support member for horizontally supporting the substrate W, is provided in a state of being supported by a cylindrical support member 12 erected at the center of the bottom of the chamber 1. Examples of the materials constituting the stage 11 and the support member 12 include aluminum with an anodized surface. An electrostatic chuck for adsorbing the substrate W is provided on the surface portion of the stage 11. The stage 11 may have a heater inside for heating the substrate W on the stage 11 to a desired temperature. The heating temperature of the stage 11 is, as an example, 150 to 400 °C, but is not limited thereto.

[0012] In the center of the ceiling wall portion 1b of the chamber 1, a stepped cylindrical opening 13 is formed, and a microwave transmission plate 14 made of a dielectric such as quartz is fitted into the large-diameter portion at the upper part thereof. A first heat insulating member 15 is interposed between the main body portion 1a and the ceiling wall portion (lid) 1b, and the side surface and the upper surface of the ceiling wall portion (lid) 1b are covered with a second heat insulating member 16. The first heat insulating member 15 and the second heat insulating member 16 are formed of, for example, ceramics. The first heat insulating member 15 is provided to block the heat from the main body portion 1a of the chamber 1 to the ceiling wall portion (lid) 1b. Further, the second heat insulating member 16 is provided to suppress dew condensation on the ceiling wall portion (lid) 1b cooled by the refrigerant. The ceiling wall portion 1b, the first heat insulating member 15, and the second heat insulating member 16 are attached to the main body portion 1a by plastic screws 17.

[0013] The microwave source 2 emits microwaves and is provided at a position corresponding to the microwave transmission plate 14 above the ceiling wall portion (lid) 1b. The microwaves emitted from the microwave source 2 pass through the microwave transmission plate 14 and are supplied to the processing space S within the chamber 1. Details of the microwave source 2 will be described later.

[0014] The gas supply unit 3 supplies a gas for hydrogen radical treatment. As the gas for hydrogen radical treatment, H2 gas can be used. It may be H2 gas alone, or H2 gas and a rare gas (for example, Ar gas) may be used. A rare gas such as Ar gas functions as a plasma generation gas. In the example of FIG. 1, the gas supply unit 3 has a first line 31 that supplies Ar gas and H2 gas and a second line 32 that supplies H2 gas. The first line 31 reaches a first discharge port in the vicinity of the microwave transmission plate 14 in the chamber 1 through the top wall portion (lid) 1b, and Ar gas and H2 gas are discharged from the first discharge port into the processing space S. The second line 32 reaches a second discharge port outside the first discharge port in the chamber 1 through the top wall portion (lid) 1b, and H2 gas is discharged from the second discharge port into the processing space S.

[0015] The exhaust unit 4 includes an exhaust pipe 41 connected to an exhaust port 18 provided at the bottom of the chamber 1, a valve 42 that adjusts the opening area of the exhaust pipe 41 to adjust the pressure in the chamber 1, and a vacuum pump 43 that evacuates the inside of the chamber 1. The valve 42 may be a pendulum valve. The vacuum pump 43 may be a turbo molecular pump. Alternatively, the chamber 1 and the exhaust pipe 41 may be connected by a thin bypass pipe, and the pressure in the chamber 1 may be adjusted by a flow rate adjustment valve provided in the bypass pipe with the main valve 42 closed.

[0016] The refrigerant supply unit 5 includes a refrigerant supply source 51 that supplies refrigerant to the ceiling wall portion (lid) 1b, a refrigerant supply pipe 52, a refrigerant return pipe 53, and a refrigerant flow path 54 provided in the ceiling wall portion (lid) 1b. Then, the refrigerant flows through the refrigerant supply pipe 52 from the refrigerant supply source 51 into the refrigerant flow path 54, and the refrigerant supplied to the refrigerant flow path 54 returns to the refrigerant supply source 51 again through the refrigerant return pipe 53. That is, the refrigerant supply unit 5 circulates and supplies refrigerant to the refrigerant flow path 54 provided in the ceiling wall portion (lid) 1b to cool the ceiling wall portion (lid) 1b. The refrigerant flow path 54 is formed over the entire surface within the ceiling wall portion (lid) 1b in order to cool the ceiling wall portion (lid) 1b uniformly. The refrigerant cools the ceiling wall portion (lid) 1b so that the ceiling wall portion (lid) 1b reaches a temperature capable of suppressing the deactivation of hydrogen radicals, for example, about 100 to 200 K (-173 to -73 °C), and a fluorine-based inert liquid such as Galden (registered trademark) or Florinate (registered trademark) can be used, for example.

[0017] In addition, the substrate processing apparatus 100 further includes a gas replacement box 6 provided so as to surround the atmosphere region including the outer surface of the ceiling wall portion (lid) 1b above the chamber 1. The gas replacement box 6 is screwed to the chamber 1 and is provided with a gas introduction portion 61 and an exhaust port 62. An exhaust mechanism (not shown) is connected to the exhaust port 62, and while the inside of the gas replacement box 6 is being exhausted, a gas containing no moisture, for example, N2 gas, is supplied from the gas introduction portion 61, and the atmosphere inside the gas replacement box 6 is replaced with N2 gas.

[0018] The substrate processing apparatus 100 further includes a control unit 7. The control unit 7 is composed of a computer and has a main control unit equipped with a CPU, an input device, an output device, a display device, and a storage device (storage medium). The main control unit controls the components of the substrate processing apparatus 100. For example, it controls the microwave power of the microwave source 2, the gas supply by the gas supply unit 3, the refrigerant supply by the refrigerant supply unit 5, the opening degree of the valve 42 of the exhaust unit 4, the output of the heater in the stage 11, etc. The storage device stores various processing parameters executed by the substrate processing apparatus 100. Also, the storage device has a storage medium storing a program for controlling the processing executed by the substrate processing apparatus 100, that is, a processing recipe. The main control unit calls a predetermined processing recipe stored in the storage medium and causes the substrate processing apparatus 100 to execute a desired processing operation based on the processing recipe.

[0019] <Microwave source> FIG. 2 is a block diagram showing an example of the microwave source 2. As shown in FIG. 2, the microwave source 2 includes a microwave output unit 21, an amplifier unit 22, and a microwave radiation unit 23. The microwave output unit 21 generates microwaves and has a microwave power supply and a microwave oscillator. The amplifier unit 22 adjusts the power level of the microwaves. The microwave radiation unit 23 includes a transmission line composed of a coaxial tube, a slot antenna provided at the lower end of the transmission line, and a slug tuner provided in the transmission line for matching the impedance of the plasma to the characteristic impedance of the microwave power supply.

[0020] The microwaves fed to the transmission line of the microwave radiation unit 23 from the amplifier unit 22 are transmitted through the transmission line and radiated from the slots of the slot antenna. The microwaves radiated from the slots pass through the microwave transmission plate 14 and are supplied to the processing space S in the chamber 1. Then, surface wave plasma is generated in the region immediately below the ceiling portion (lid) 1b by the microwaves supplied to the processing space S.

[0021] <Operation of the substrate processing apparatus> Next, the operation of the substrate processing apparatus 100 will be described. First, the substrate W is carried into the chamber 1 and placed on the stage 11, and the substrate W is adsorbed by an electrostatic chuck and heated to a desired temperature by a heater. At the same time, the valve 42 of the exhaust section 4 is adjusted to regulate the pressure in the chamber 1 to a desired pressure.

[0022] Then, an Ar gas as a plasma generation gas is supplied through the first line 31 of the gas supply section 3 to the region directly below the ceiling wall portion (lid) 1b in the processing space S in the chamber 1, and microwaves are supplied from the microwave source 2 to the processing space S in the chamber 1 through the microwave transmission plate 14 to ignite the plasma. After the plasma is ignited, the microwaves radiated from the microwave source 2 and transmitted through the microwave transmission plate 14 propagate on the surface of the microwave transmission plate 14 in contact with the plasma to form a surface wave, and a surface wave plasma is generated by the Ar gas in the region directly below the ceiling wall portion (lid) 1b. Then, at the timing when the plasma is ignited, an H2 gas as a processing gas is supplied into the chamber 1 from the first line 31 and the second line 32, so that the H2 gas is plasmaized and hydrogen radicals are generated. Note that the Ar gas and the H2 gas may be supplied into the chamber 1 simultaneously to ignite the plasma, or only the H2 gas as a processing gas may be supplied into the chamber 1 without using the Ar gas as a plasma generation gas to directly ignite the plasma.

[0023] In this embodiment, the substrate W is processed by the hydrogen radicals generated in this way. For example, a cleaning process is performed to remove a metal oxide film existing on the substrate W or an etching residue generated in a previous process, which is performed prior to the formation of a Cu film to be a Cu wiring.

[0024] At this time, a refrigerant is supplied to the refrigerant flow path 54 formed in the ceiling wall portion (lid) 1b, and the ceiling wall portion (lid) 1b is cooled to a temperature capable of suppressing the deactivation of hydrogen radicals, for example, about 100 to 200 K (-173 to -73 °C). The cooling of the ceiling wall portion (lid) 1b will be described in detail later.

[0025] After the treatment of the substrate W by hydrogen radicals is completed, the gas supply is stopped, the valve 42 is fully opened for evacuation, and when a predetermined degree of vacuum is reached, the substrate W on the stage 11 is carried out of the chamber 1.

[0026] <Cooling of the top wall portion (lid)> Next, the cooling of the top wall portion (lid) 1b will be described in detail. Since the cleaning process using hydrogen radicals as described above utilizes a chemical reaction, in order to improve the efficiency of the cleaning process and increase productivity, [1] raising the substrate temperature or [2] increasing the amount of hydrogen radicals supplied to the substrate W can be considered.

[0027] However, regarding [1] above, if the heating temperature is simply increased to obtain a sufficient reaction rate, it is necessary to separately provide a process for cooling the substrate before performing the next process such as a film forming process after the cleaning process, which is not preferable from the viewpoints of the space of the cooling device and productivity.

[0028] Therefore, it is practical to increase the amount of hydrogen radicals supplied to the substrate W of the above [2]. In the present embodiment, since microwaves are used, surface wave plasma mainly composed of radicals is generated at a high density in the region directly below the ceiling portion (lid) 1b including the region directly below the microwave transmission plate 14 where microwaves are radiated, and diffuses toward the stage 11 side. That is, due to the characteristics of the surface wave plasma, as schematically shown in FIG. 3, a region (high plasma density region) 81 with the highest plasma density is formed in the region directly below the ceiling portion (lid) 1b including the region directly below the microwave transmission plate 14 where microwaves are radiated. Then, below the high plasma density region 81, a region (low plasma density region) 82 where plasma diffuses from the high plasma density region 81 and the plasma density is relatively low is formed. In the high plasma density region 81, a large amount of radicals are also generated, and the radicals diffuse toward the substrate W. However, it is known that radicals are rapidly deactivated by contacting the metal wall. If the material of the ceiling portion (lid) 1b is metal, many radicals will be deactivated on the surface of the ceiling portion (lid) 1b, and the amount of radicals supplied to the substrate W on the stage 11 will be extremely small. Therefore, the above [2] cannot be achieved as it is.

[0029] As a measure to suppress the deactivation of radicals, it has been conventionally known to coat the surface of the chamber including the ceiling portion (lid) with a dielectric having a small radical deactivation coefficient such as quartz (silica) or alumina. In the present embodiment, coating these on the ceiling portion (lid) 1b is also allowed. However, the materials that can be used for coating industrially are limited, and it is difficult to sufficiently suppress the deactivation of radicals only by reducing the radical deactivation coefficient, which is a physical property value. Also, by increasing the microwave power, the amount of radicals itself can be increased, and the amount of radicals supplied to the substrate W on the stage 11 can be increased. However, when the microwave power is increased, there is a risk that the plasma damage to the substrate W will increase.

[0030] Therefore, in this embodiment, refrigerant is circulated and supplied to the refrigerant flow path 54 provided in the top wall portion (lid) 1b of the chamber 1, and the top wall portion (lid) 1b is cooled so that the temperature can suppress the deactivation of hydrogen radicals, for example, to about 100 to 200 K (-173 to -73 °C). Thereby, a sufficient amount of hydrogen radicals can be supplied to the substrate W without increasing the plasma damage to the substrate W.

[0031] The radical deactivation coefficient γ is expressed by the following formula (1) as a function of temperature (Materials 2023, 16, 1774 / A Review of Recombination Coefficients of Neutral Oxygen), and exponentially decreases as the temperature decreases. γ(T s )=Ae -B / Ts ···(1) (However, A and B are usually experimentally determined parameters.) And the relationship between the temperature and the radical deactivation coefficient γ of hydrogen radicals in quartz (SiO2) is as shown in FIG. 4 (J. Phys. Chem. C 2016, 120, 24137-24147 / Hydrogen Recombination Rates on Silica from Atomic-Scale Calculations). In Fig. 4, the solid line represents the measured values, and the dashed line represents those obtained by simulation. As shown in Fig. 4, although the radical deactivation coefficient γ of hydrogen radicals decreases exponentially with the decrease in temperature, it turns to increase when it becomes lower than the temperature between 100 and 125 K (-173 and -148 °C). That is, the radical deactivation coefficient γ takes a minimum value between 100 and 125 K (-173 and -148 °C). By cooling the ceiling portion (lid) 1b to about 100 to 200 K (-173 to -73 °C), the radical deactivation coefficient can be reduced by more than one order of magnitude compared with the case at room temperature. In this temperature range, without using a GM refrigerator that cools to an extremely low temperature (100 K or lower) used in a cryopump or the like, the amount of radical deactivation can be minimized by a simple cooling method of flowing a refrigerant through the refrigerant flow path formed in the ceiling portion (lid) 1b. For example, as for Galden (registered trademark), which is a fluorine-based inert liquid, there is one with a pour point of about 176 K (-97 °C), and it is possible to cool the temperature of the ceiling portion (lid) 1b to 200 K or lower.

[0032] Note that in Patent Document 3, a cooling water channel 34a is provided in a shield lid 34 corresponding to the lid for cooling, but this is for equipment maintenance and there is no perspective of suppressing radical deactivation.

[0033] When flowing a refrigerant through the refrigerant flow path 54 of the ceiling portion (lid) 1b to cool the ceiling portion (lid) 1b to a desired temperature, in order to surely suppress the deactivation of hydrogen radicals introduced into the chamber 1 through the microwave transmission plate 14, it is preferable to determine the pattern of the refrigerant flow path 54 so that the ceiling portion (lid) 1b can be cooled uniformly.

[0034] Examples of such patterns of the refrigerant flow path 54 include those shown in FIGS. 5, 6, and 7. In the example of FIG. 5, two spiral flow paths are combined. One spiral flow path extends from the outer peripheral side inlet spirally to the central portion, and the other spiral flow path is provided between the one spiral flow path, connects to the one spiral flow path at the central portion, and is formed spirally toward the outer peripheral side outlet. In the example of FIG. 6, the flow paths are formed concentrically. Half of the concentric flow paths are used as the forward path portion having an inlet on the outer peripheral side, and the remaining half is used as the return path portion having an outlet on the outer peripheral side, and the return path portion and the forward path portion are formed to be connected at the central portion. In the example of FIG. 7, the flow paths are formed concentrically, have an inlet on the outer peripheral side, are branched left and right in the outer peripheral side portion of the flow path from the inlet, and are formed to merge at the central portion and lead to the outer peripheral side outlet.

[0035] When cooling the top wall portion (lid) 1b to a low temperature in this way, if the inside of the chamber 1 becomes high temperature due to plasma treatment and the top wall portion (lid) 1b is affected by heat, the cooling efficiency deteriorates. Therefore, in the present embodiment, a first heat insulating member 15 is provided between the main body portion 1a of the chamber 1 and the top wall portion (lid) 1b to block the heat from the main body portion 1a to the top wall portion (lid) 1b and improve the cooling efficiency of the top wall portion (lid) 1b by the refrigerant.

[0036] Further, when the top wall portion (lid) 1b is cooled to a low temperature, condensation may occur on the atmospheric side portion of the top wall portion (lid) 1b, which may adversely affect the process. Therefore, in the present embodiment, the side surface and the upper surface on the atmospheric side of the top wall portion (lid) 1b are covered with a second heat insulating member 16 to suppress condensation on the atmospheric side portion. Also, if only the second heat insulating member 16 is provided, condensation may occur due to moisture in the atmosphere. Therefore, the atmospheric side portion above the top wall portion (lid) 1b is surrounded by a gas replacement box 6 and replaced with a gas containing no moisture, for example, N2 gas. Thereby, contact of moisture with the top wall portion (lid) 1b can be prevented as much as possible, and condensation can be more completely prevented. Also, by using plastic screws 17 for fastening the top wall portion (lid) 1b and the like, condensation on the screws is also prevented.

[0037] <Modification Example of Substrate Processing Apparatus> Next, a modified example of the substrate processing apparatus will be described.

[0038] [First Modified Example] FIG. 8 is a cross-sectional view showing a first modified example of the substrate processing apparatus. In the example of FIG. 8, an intermediate portion 1c that defines a plasma generation space D is provided between the main body portion 1a and the top wall portion 1b of the chamber 1, and the plasma generated in the plasma generation space D is diffused to the substrate W in the processing space S in a remote plasma method. Even in such a remote plasma method, deactivation of hydrogen radicals can be suppressed, and a sufficient amount of hydrogen radicals can be supplied to the processing space S.

[0039] [Second Modified Example] FIG. 9 is a cross-sectional view showing a second modified example of the substrate processing apparatus. In the example of FIG. 9, an ion filter 1d is provided in a portion between the top wall portion (lid) 1b and the stage 11 in the chamber 1. The ion filter 1d traps ions in the plasma that diffuses from the surface wave plasma formed in the region immediately below the top wall portion (lid) 1b to the substrate W on the stage 11. Thereby, mainly hydrogen radicals necessary for processing can be selectively supplied to the substrate W, and damage to the substrate W by ions can be reduced.

[0040] [Other Applications] As described above, the embodiments have been described. However, the embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. The above embodiments may be omitted, substituted, or changed in various forms without departing from the scope and gist of the appended claims.

[0041] For example, in the above embodiment, the cleaning process using hydrogen radicals is exemplified as the radical process on the substrate, but it is not limited to this, and a process using other radicals may be used. Further, the microwave source is not limited to that of the above embodiment, and for example, any device that supplies microwaves into the chamber from the top wall portion (lid) of the chamber, such as the plasma processing apparatus described in Patent Document 3, may be used. [Description of Reference Numerals]

[0042] 1; Chamber 1a; Main body part 1b; Ceiling part (lid) 2; Microwave source 3; Gas supply unit 4; Exhaust unit 5; Refrigerant supply unit 6; Gas replacement box 7; Control unit 11; Stage 14; Microwave transmission plate 15; First heat insulating member 16; Second heat insulating member 54; Refrigerant flow path 100; Substrate processing apparatus S; Processing space W; Substrate

Claims

1. A substrate processing apparatus for subjecting a substrate to radical treatment, comprising: a chamber having a main body portion and a top wall portion for accommodating the substrate; a stage for supporting the substrate within the chamber; a microwave source provided above the top wall portion for supplying microwaves into the chamber; a gas supply unit for supplying a processing gas for generating plasma by microwaves to a region immediately below the top wall portion within the chamber; a refrigerant supply unit having a refrigerant flow path formed in the top wall portion and a refrigerant supply source for supplying refrigerant to the refrigerant flow path, and passing a refrigerant for cooling the top wall portion to a temperature capable of suppressing deactivation of radicals in the plasma through the refrigerant flow path; and radically treating the substrate with the radicals in the plasma generated by the microwaves.

2. The substrate processing apparatus according to claim 1, wherein the radicals are hydrogen radicals.

3. The processing gas is H ２ The substrate processing apparatus according to claim 2, which includes a gas.

4. The processing gas is H ２ The substrate processing apparatus according to claim 3, comprising an H gas and a rare gas.

5. The substrate processing apparatus according to claim 2, wherein the refrigerant cools the top wall portion to a temperature in the range of 100 to 200 K.

6. The substrate processing apparatus according to claim 2, wherein the stage has a heater and is heated to 150 to 400 °C by the heater.

7. The substrate processing apparatus according to any one of claims 1 to 6, further comprising a microwave transmission plate fitted into the top wall portion and transmitting microwaves radiated from the microwave source into the chamber.

8. The substrate processing apparatus according to any one of claims 1 to 6, wherein a dielectric coating is formed on the surface of the top wall portion.

9. The substrate processing apparatus according to any one of claims 1 to 6, further comprising a first heat insulating member interposed between the main body portion and the top wall portion.

10. The substrate processing apparatus according to any one of claims 1 to 6, further comprising a second heat insulating member provided so as to cover an outer portion of the top wall portion.

11. The substrate processing apparatus according to claim 10, further comprising a gas replacement box provided so as to surround an atmospheric region including the outer surface of the top wall portion above the chamber and replacing the internal atmosphere with a gas not containing moisture.

12. The substrate processing apparatus according to any one of claims 1 to 6, further comprising an ion trap provided between the top wall portion and the stage within the chamber.

13. The chamber further has an intermediate portion provided between the main body portion and the top wall portion and defining a plasma generation space, and the plasma generated in the plasma generation space diffuses to the substrate. The substrate processing apparatus according to any one of claims 1 to 6.

14. The refrigerant flow path formed in the top wall portion is a combination of two spiral flow paths. One spiral flow path extends spirally from an outer peripheral side inlet to the central portion, and the other spiral flow path is provided between the one spiral flow path, connects to the one spiral flow path at the central portion, and is formed spirally toward an outer peripheral side outlet. The substrate processing apparatus according to any one of claims 1 to 6.

15. The refrigerant flow path formed in the top wall portion is formed concentrically. Half of the refrigerant flow path is used as an outward path portion having an inlet on the outer peripheral side, and the remaining half is used as a return path portion having an outlet on the outer peripheral side, and the return path portion and the outward path portion are formed to be connected at the central portion. The substrate processing apparatus according to any one of claims 1 to 6.

16. The refrigerant flow path formed in the top wall portion is formed concentrically, has an inlet on the outer peripheral side, is branched left and right in the outer peripheral side portion of the refrigerant flow path from the inlet, and is formed to merge at the central portion and lead to an outlet on the outer peripheral side. The substrate processing apparatus according to any one of claims 1 to 6.

17. A substrate processing method for performing radical processing on a substrate, preparing a substrate processing apparatus having a main body portion and a top wall portion in which a refrigerant flow path is formed, a chamber for accommodating a substrate, a stage for supporting the substrate in the chamber, a microwave source provided above the top wall portion for supplying microwaves into the chamber, and a gas supply portion for supplying a processing gas for generating plasma by microwaves to a region immediately below the top wall portion in the chamber; placing a substrate on the stage; supplying the processing gas from the gas supply portion to a region immediately below the top wall portion in the chamber; supplying microwaves from the microwave source into the chamber to generate plasma in a region immediately below the top wall portion; flowing a refrigerant for cooling the top wall portion to a temperature capable of suppressing deactivation of radicals in the plasma through the refrigerant flow path; The substrate processing method comprising the above steps.

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