Gas supply mechanism and processing device

Abstract

To provide a gas supply mechanism allowing the number of gas flow distributions supplied to a processing space larger than gas supply sources, and to provide a processing device.SOLUTION: A gas supply mechanism 10 includes: N gas supply sources 11; M gas diffusion members 12A for supplying gas to a processing space 21S; and L supply lines 13 connected in parallel to the gas supply sources 11 for one gas diffusion member 12A. N is an integer equal to or greater than 1, M is an integer greater than N, and L is an integer equal to or smaller than M. The supply line 13 has a valve 14 between gas diffusion member 12A connected to the supply line 13 and gas supply source 11 connected to supply line 13.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a gas supply mechanism and a processing apparatus including the gas supply mechanism.

Background Art

[0002] An example of an inductively coupled plasma processing apparatus includes a showerhead for introducing gas into a processing space. The showerhead is composed of a plurality of divided showerheads. The plurality of divided showerheads are divided into a plurality of divided showerhead groups having a number smaller than the number of the divided showerheads. A flow rate ratio controller for each divided showerhead group is connected to each divided showerhead. Gas having a flow rate set in the flow rate ratio controller connected to the group is supplied to each divided showerhead group (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] In the inductively coupled plasma processing apparatus described above, the pattern of the gas flow rate classification is fixed depending on the position of the divided showerhead group. In one showerhead, it is possible to increase the classification of the gas flow rate within the plane of the showerhead by increasing the number of divided showerhead groups and connecting a flow rate ratio controller to each divided showerhead group. However, the maximum number of classifications of the gas flow rate that can be set at one time within the plane of the showerhead is the same as the number of controllers included in the flow rate ratio controller group. In addition, an increase in the number of controllers included in the flow rate ratio controller group leads to an increase in the number of components in the inductively coupled plasma processing apparatus. Note that such problems are common not only in inductively coupled plasma processing apparatuses but also in other processing apparatuses such as capacitively coupled plasma processing apparatuses and processing apparatuses equipped with a flow rate controller instead of a flow rate ratio controller.

Means for Solving the Problems

[0005] The gas supply mechanism for solving the above problems includes N gas supply sources, M gas diffusion members for supplying gas to the processing space, and L parallel supply lines for connecting the gas supply sources in parallel to one of the gas diffusion members. N is an integer of 1 or more, M is an integer larger than N, and L is an integer equal to or less than M. The supply line has a valve between the gas diffusion member connected to the supply line and the gas supply source connected to the supply line.

[0006] The processing apparatus for solving the above problems includes the above gas supply mechanism and a processing tank that defines the processing space.

[0007] According to the above gas supply mechanism and processing apparatus, since the gas supply sources are connected in parallel to one gas diffusion member, it is possible to form more classifications of the gas flow rate supplied to the processing space with a smaller number of gas supply sources than the number of gas diffusion members.

[0008] In the above gas supply mechanism, the gas supply source is composed of a plurality of gas supply units, and for one of the gas diffusion members, the plurality of gas supply units may be connected by one of the supply lines.

[0009] According to the above gas supply mechanism, since a plurality of gas supply units are connected to each gas diffusion member, it is possible to select from which of the plurality of gas supply units to supply gas to one gas diffusion member by opening and closing a valve.

[0010] In the above gas supply mechanism, each gas supply unit may be composed of a plurality of mass flow controllers, and the gas supply unit may supply a mixed gas of the gases supplied from each mass flow controller to the gas diffusion member.

[0011] According to the above gas supply mechanism, it is possible to form more sections in the plane of the shower plate 12 for the mixed gas supplied from the gas supply unit than the number of gas supply sources.

[0012] In the above gas supply mechanism, the gas supply source 31 may include a plurality of flow splitters, and for one of the gas diffusion members, the plurality of flow splitters may be connected by one of the supply lines.

[0013] According to the above gas supply mechanism, since a plurality of flow splitters are connected to each gas diffusion member, it is possible to select from which of the plurality of flow splitters to supply gas to one gas diffusion member by opening and closing a valve.

Brief Description of Drawings

[0014]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

MODE FOR CARRYING OUT THE INVENTION

[0015] [First Embodiment] With reference to FIGS. 1 to 6, a first embodiment of the gas supply mechanism and the processing apparatus will be described. Hereinafter, an etching apparatus which is an example of the processing apparatus will be described. Note that the processing apparatus is not limited to the etching apparatus, and may be various film forming apparatuses. The film forming apparatus may be, for example, a CVD apparatus, a PVD apparatus, or the like.

[0016] [Etching Apparatus] As shown in FIG. 1, the etching apparatus 20 includes a gas supply mechanism 10. The gas supply mechanism 10 includes N gas supply sources 11, a shower plate 12, and L supply lines 13. The shower plate 12 is composed of M gas diffusion members 12A that supply gas to the processing space 21S. Each supply line 13 connects a gas supply source 11 in parallel to one gas diffusion member 12A. The L supply lines 13 are parallel to each other. Here, N is an integer of 1 or more, M is an integer larger than N, and L is an integer larger than N and equal to or less than M. The supply line 13 has a valve 14 between the gas diffusion member 12A connected to the supply line 13 and the gas supply source 11 connected to the supply line 13.

[0017] Each valve 14 changes the state of the supply line 13 having the valve 14 between a first state in which gas is supplied to the gas diffusion member 12A to which the supply line 13 is connected and a second state in which gas is not supplied to the gas diffusion member to which the supply line 13 is connected. When each valve 14 is open, the supply line 13 having the valve 14 has the first state. On the other hand, when each valve 14 is closed, the supply line 13 having the valve 14 has the second state.

[0018] The etching apparatus 20 includes a vacuum chamber 21 that defines the processing space 21S. The vacuum chamber 21 is an example of a processing chamber. Inside the processing space 21S, a stage 22 on which a processing target S is placed is arranged. The processing target S is, for example, a disk-shaped substrate. The above-described shower plate 12 is arranged inside the processing space 21S, and the surface of the stage 22 on which the processing target S is placed and the shower plate 12 face each other. A high-frequency power supply 24 is connected to the stage 22 via an impedance matcher 23.

[0019] When viewed from a perspective facing the surface on which the object to be processed S is placed, a deposition prevention plate 25 is disposed between the stage 22 and the inner surface of the vacuum chamber 21. The vacuum chamber 21 is provided with an exhaust port 21P on the side opposite to the shower plate 12 with respect to the deposition prevention plate 25. In the example shown in FIG. 1, the vacuum chamber 21 has two exhaust ports 21P, and the two exhaust ports 21P sandwich the stage 22. An exhaust unit 26 is connected to each exhaust port 21P. The exhaust unit 26 includes, for example, a valve and an exhaust pump. When the exhaust unit 26 is driven, the fluid in the processing space 21S is exhausted from the exhaust port 21P through the through holes of the deposition prevention plate 25.

[0020] When etching the object to be processed S, first, the object to be processed S is placed on the stage 22. Next, the exhaust of the processing space 21S by the exhaust unit 26 and the supply of gas to the processing space 21S by the gas supply mechanism 10 are started. Subsequently, high-frequency power is supplied from the high-frequency power source 24 to the stage 22, generating plasma from the gas in the processing space 21S. Charged particles in the plasma are drawn into the object to be processed S in response to the alternation of the high-frequency voltage applied to the stage 22, thereby advancing the anisotropic etching of the object to be processed S.

[0021] [Gas Supply Mechanism] Referring to FIGS. 2 and 3, the gas supply mechanism 10 will be described in more detail. In the example shown in FIGS. 2 and 3, an example in which the gas supply mechanism 10 includes one gas supply source 11 and the shower plate 12 is composed of five gas diffusion members 12A will be described. That is, in the gas supply mechanism 10, a structural example in the case where N is 1, and M and L are 5 will be described.

[0022] As shown in FIG. 2, the gas supply source 11 is composed of a plurality of gas supply units 11A. In the example shown in FIG. 2, the gas supply source 11 is composed of two gas supply units 11A. A plurality of gas supply units 11A are connected to one gas diffusion member 12A by one supply line 13. In the example shown in FIG. 2, two gas supply units 11A are connected to one gas diffusion member 12A by one supply line 13. A valve 14 is located between each gas supply unit 11A that supplies the gas supply source 11 and each gas diffusion member 12A. Therefore, in the example shown in FIG. 2, one supply line 13 has two valves 14.

[0023] Specifically, the shower plate 12 is composed of a first gas diffusion member 12A1, a second gas diffusion member 12A2, a third gas diffusion member 12A3, a fourth gas diffusion member 12A4, and a fifth gas diffusion member 12A5. The gas supply mechanism 10 includes a first supply line 13A, a second supply line 13B, a third supply line 13C, a fourth supply line 13D, and a fifth supply line 13E.

[0024] The first supply line 13A includes a first valve 14A1 and a second valve 14A2. The second supply line 13B includes a first valve 14B1 and a second valve 14B2. The third supply line 13C includes a first valve 14C1 and a second valve 14C2. The fourth supply line 13D includes a first valve 14D1 and a second valve 14D2. The fifth supply line 13E includes a first valve 14E1 and a second valve 14E2.

[0025] The first supply line 13A connects two gas supply parts 11A1 and 11A2 to the first gas diffusion member 12A1. The second supply line 13B connects two gas supply parts 11A1 and 11A2 to the second gas diffusion member 12A2. The third supply line 13C connects two gas supply parts 11A1 and 11A2 to the third gas diffusion member 12A3. The fourth supply line 13D connects two gas supply parts 11A1 and 11A2 to the fourth gas diffusion member 12A4. The fifth supply line 13E connects two gas supply parts 11A1 and 11A2 to the fifth gas diffusion member 12A5. Note that the five supply lines 13A to 13E merge into one line before connecting to each gas supply part 11A1 and 11A2, but they may also be individually connected to each gas supply part 11A1 and 11A2.

[0026] Each of the supply lines 13A to 13E has a first state with respect to the first gas supply part 11A1 when the first valves 14A1 to 14E1 provided in the supply lines 13A to 13E are opened. In contrast, each of the supply lines 13A to 13E has a second state with respect to the first gas supply part 11A1 when the first valves 14A1 to 14E1 provided in the supply lines 13A to 13E are closed.

[0027] Each of the supply lines 13A to 13E has a first state with respect to the second gas supply part 11A2 when the second valves 14A2 to 14E2 provided in the supply lines 13A to 13E are opened. In contrast, each of the supply lines 13A to 13E has a second state with respect to the second gas supply part 11A2 when the second valves 14A2 to 14E2 provided in the supply lines 13A to 13E are closed.

[0028] According to the gas supply mechanism 10, a plurality of gas supply parts 11A1 and 11A2 are connected to each of the gas diffusion members 12A1 to 12A5. Therefore, it is possible to select from which of the plurality of gas supply parts 11A1 and 11A2 gas is to be supplied to one of the gas diffusion members 12A1 to 12A5 by opening and closing the valves 14A1 to 14E1 and 14A2 to 14E2.

[0029] Figure 3 is a plan view showing the shape of the shower plate 12 from a perspective facing the surface on which the shower plate 12 spreads, together with the supply lines 13A to 13E and the gas supply parts 11A1 and 11A2. In Figure 3, a shower plate 12 which is an example of the shower plate 12 and has a disc shape is shown.

[0030] As shown in Figure 3, the five gas diffusion members 12A provided in the shower plate 12 have concentric circular or annular shapes with respect to each other. Among the five gas diffusion members 12A, only the first gas diffusion member 12A1 has a circular shape, and the second gas diffusion member 12A2 to the fifth gas diffusion member 12A5 each have an annular shape. The first gas diffusion member 12A1 includes the center of the shower plate 12, and the fifth gas diffusion member 12A5 includes the outer edge of the shower plate 12. In the radial direction of the shower plate 12, the third gas diffusion member 12A3 is located between the first gas diffusion member 12A1 and the fifth gas diffusion member 12A5. In the radial direction of the shower plate 12, the second gas diffusion member 12A2 is located between the first gas diffusion member 12A1 and the third gas diffusion member 12A3. In the radial direction of the shower plate 12, the fourth gas diffusion member 12A4 is located between the third gas diffusion member 12A3 and the fifth gas diffusion member 12A5.

[0031] In Figure 3, the closed valve 14 is shown in black, and the open valve 14 is shown in white. In the example shown in Figure 3, the first valves 14A1, 14B1, and 14C1 of the first supply line 13A, the second supply line 13B, and the third supply line 13C are closed, while the second valves 14A2, 14B2, and 14C2 are open. The first valves 14D1 and 14E1 of the fourth supply line 13D and the fifth supply line 13E are open, while the second valves 14D2 and 14E2 are closed.

[0032] Therefore, the gas from the second gas supply unit 11A2 is supplied to the first gas diffusion member 12A1, the second gas diffusion member 12A2, and the third gas diffusion member 12A3. On the other hand, the gas from the first gas supply unit 11A1 is supplied to the fourth gas diffusion member 12A4 and the fifth gas diffusion member 12A5.

[0033] Each of the first valves 14A1 to 14E1 can be either in an open state or a closed state. Therefore, the gas supplied from the first gas supply unit 11A1 to the processing space 21S can have two 5 types of distributions formed by the gas supply mechanism 10. Each of the second valves 14A2 to 14E2 can be either in an open state or a closed state. Therefore, the gas supplied from the second gas supply unit 11A2 to the processing space 21S can have two 5 types of distributions formed by the gas supply mechanism 10.

[0034] Each of the gas supply units 11A1 and 11A2 may be composed of a single mass flow controller or a plurality of mass flow controllers. The mass flow controller can adjust the flow rate of the gas output from the mass flow controller to the supply lines 13A to 13E to a plurality of values.

[0035] When each of the gas supply units 11A1 and 11A2 is composed of a single mass flow controller, each of the gas supply units 11A1 and 11A2 supplies one type of gas to the gas diffusion members 12A1 to 12A5. When each of the gas supply units 11A1 and 11A2 is composed of a plurality of mass flow controllers, each of the gas supply units 11A1 and 11A2 supplies a mixed gas of the gases supplied from the plurality of mass flow controllers to the gas diffusion members 12A1 to 12A5. Thereby, it is possible to form more sections in the plane of the shower plate 12 than the number of gas supply sources 11 for the mixed gas supplied from the gas supply units 11A1 and 11A2.

[0036] Thus, according to the gas supply mechanism 10 of the present disclosure, the gas supply source 11 is connected in parallel to one gas diffusion member 12A1 to 12A5. Therefore, it is possible to form more divisions of the gas flow rate supplied to the processing space 21S with a smaller number of gas supply sources 11 than the number of gas diffusion members 12A1 to 12A5.

[0037] [Test Example] With reference to FIGS. 4 and 5, a test example will be described. In the etching apparatus 20 including the gas supply mechanism 10 shown in FIGS. 2 and 3, the gas flow rates supplied by the respective gas supply units 11A1 and 11A2 were set as follows. Also, the states of the first valves 14A1 to 14E1 and the states of the second valves 14A2 to 14E2 were set as described in Table 1 below. Note that the gas flow rates in the respective gas supply units 11A1 and 11A2 are relative values. Also, in Table 1, when each valve is open, it is indicated by "○", and when each valve is closed, it is indicated by "×".

[0038] FIG. 4 shows the flow rate distribution of the gas discharged from each supply hole of the gas diffusion member connected to the first gas supply unit 11A1 and the flow rate distribution of the gas discharged from each supply hole of the gas diffusion member connected to the second gas supply unit 11A2.

[0039] As shown in FIG. 4, in this test example, it was assumed that the flow rate distribution of the gas supplied from each supply hole is a normal distribution. Then, the gas flow rate distribution in the processing space 21S under each of the conditions 1 to 10 shown in Table 1 was simulated.

[0040] [Gas Flow Rate] First Gas Supply Unit 11A1: 0.1 Second Gas Supply Unit 11A2: 0.12

[0041] [Opening and Closing of Valves]

Table 1

[0042] Figures 5 and 6 show the distribution of the gas flow rate in the radial direction of the shower plate 12 when the gas flow rates supplied by the respective gas supply units 11A1 and 11A2 and the states of the respective first valves 14A1 to 14E1 and second valves 14A2 to 14E2 are set as described above.

[0043] From the graphs of each of Conditions 1 to 5 shown in Figure 5 and the graph of Condition 6 shown in Figure 6, the following was recognized. That is, from Condition 1 to Condition 6 where each of the first valves 14A1 to 14E1 is open and each of the second valves 14A2 to 14E2 is closed, by expanding the region where gas is supplied from the second gas supply unit 11A2 in the processing space 21S, it was recognized that the region where relatively high-flow gas is supplied spreads from the center of the shower plate 12 toward the outer side in the radial direction.

[0044] Similarly, from the graphs of each of Conditions 6 to 10 shown in Figure 6, the following was recognized. That is, from Condition 6 to Condition 10 where each of the first valves 14A1 to 14E1 is closed and each of the second valves 14A2 to 14E2 is open, by expanding the region where gas is supplied from the first gas supply unit 11A1 in the processing space 21S, it was recognized that the region where relatively low-flow gas is supplied spreads from the center of the shower plate 12 toward the outer side in the radial direction.

[0045] As is clear from the graphs of each of Conditions 1 to 10 in this way, it was recognized that by changing the states of the first valves 14A1 to 14E1 and the second valves 14A2 to 14E2, the distribution of the gas flow rate in the radial direction of the shower plate 12 is changed.

[0046] As described above, according to the first embodiment of the gas supply mechanism and the processing apparatus, the following effects can be obtained. (1-1) A gas supply source 11 is connected in parallel to each of the gas diffusion members 12A1 to 12A5. Therefore, it is possible to form a larger number of divisions of the gas flow rate supplied to the processing space 21S with a smaller number of gas supply sources 11 than the number of gas diffusion members 12A1 to 12A5.

[0047] (1-2) For each of the gas diffusion members 12A1 to 12A5, it is possible to select from which of the plurality of gas supply units 11A1 and 11A2 to supply gas by opening and closing the valves 14A1 to 14E1 and 14A2 to 14E2.

[0048] (1-3) It is possible to form more divisions in the plane of the shower plate 12 for the mixed gas supplied from the gas supply units 11A1 and 11A2 than the number of gas supply sources 11.

[0049] [Second Embodiment] Referring to FIG. 7, a second embodiment of the gas supply mechanism and the processing apparatus will be described. In the gas supply mechanism of the second embodiment, it is different from the gas supply mechanism 10 of the first embodiment in that the gas supply source includes a plurality of flow splitters. Therefore, hereinafter, the differences from the gas supply mechanism 10 of the first embodiment in the gas supply mechanism of the second embodiment will be described in detail. On the other hand, in the gas supply mechanism of the second embodiment, the same reference numerals are given to the common points with the gas supply mechanism 10 of the first embodiment, and the detailed description of the common points is omitted.

[0050] [Gas Supply Mechanism] As shown in FIG. 7, the gas supply mechanism 30 includes a gas supply source 31. The gas supply source 31 includes a gas supply unit 32, a first flow splitter 33A, and a second flow splitter 33B. Each flow splitter 33A and 33B supplies gas with a flow rate adjusted by the gas supply unit 32 to each supply line 13A to 13E.

[0051] The gas supply unit 32 may be composed of a single mass flow controller or a plurality of mass flow controllers. The mass flow controller can adjust the flow rate of the gas output from the mass flow controller to the supply lines 13A to 13E to a plurality of values.

[0052] When the gas supply unit 32 is composed of a single mass flow controller, the gas supply unit 32 supplies one type of gas to the gas diffusion members 12A1 to 12A5. When each gas supply unit 32 is composed of a plurality of mass flow controllers, the gas supply unit 32 supplies the mixed gas of the gases supplied from each mass flow controller to the gas diffusion members 12A1 to 12A5. Thereby, it is possible to form more distributions than the number of gas supply sources 31 for the mixed gas supplied from the gas supply unit 32.

[0053] The gas supply source 31 includes a plurality of flow splitters 33A and 33B. In the example shown in FIG. 6, the gas supply source 31 includes two flow splitters 33A and 33B. One supply line 13A to 13E connects two flow splitters 33A and 33B to one gas diffusion member 12A1 to 12A5.

[0054] In this way, two flow splitters 33A and 33B are connected to each gas diffusion member 12A1 to 12A5. Therefore, it is possible to select from which of the two flow splitters 33A and 33B to supply gas to one gas diffusion member 12A1 to 12A5 by opening and closing the valves 14A1 to 14E1 and 14A2 to 14E2.

[0055] As described above, according to the second embodiment of the gas supply mechanism and the processing apparatus, in addition to the above-described (1-1) and (1-3), the following effects can be obtained. (2-1) For one gas diffusion member 12A1 to 12A5, it is possible to select from which of the plurality of flow splitters 33A and 33B to supply gas by opening and closing valves 14A1 to 14E1 and 14A2 to 14E2.

[0056] In addition, each of the above-described embodiments can be implemented with the following modifications. [Gas supply unit] · As shown in FIG. 8, the gas supply mechanism 30 may include three or more gas supply units 11A1 to 11A3. In the example shown in FIG. 8, the gas supply mechanism 30 includes three gas supply units 11A1 to 11A3. The third gas supply unit 11A3 may be composed of a single mass flow controller or a plurality of mass flow controllers, similar to the first gas supply unit 11A1 and the second gas supply unit 11A2.

[0057] The first supply line 13A includes a first element 13A1 and a second element 13A2. The second supply line 13B includes a first element 13B1 and a second element 13B2. The third supply line 13C includes a first element 13C1 and a second element 13C2. The fourth supply line 13D includes a first element 13D1 and a second element 13D2. The fifth supply line 13E includes a first element 13E1 and a second element 13E2.

[0058] The first supply line 13A includes a third valve 14A3. The second supply line 13B includes a third valve 14B3. The third supply line 13C includes a third valve 14C3. The fourth supply line 13D includes a third valve 14D3. The fifth supply line 13E includes a third valve 14E3.

[0059] In the first elements 13A1 to 13E1 of each supply line 13A to 13E, first valves 14A1 to 14E1 and second valves 14A2 to 14E1 are located. In the second elements 13A2 to 13E2 of each supply line 13A to 13E, third valves 14A3 to 14E3 are located. Each of the third valves 14A3 to 14E3 is located between the gas diffusion members 12A1 to 12A5 to which the supply lines 13A to 13E having the valves 14A3 to 14E3 are connected and the third gas supply section 11A3. Three gas supply sections 11A1 to 11A3 are connected to each of the gas diffusion members 12A1 to 12A5 in parallel.

[0060] Each of the third valves 14A3 to 14E3 can be in either an open state or a closed state. Therefore, there are two ways for the gas supplied from the third gas supply section 11A3 to the processing space 21S to be distributed by the gas supply mechanism 30. 5

[0061] Similar to the gas supply sections 11A1 to 11A3, the gas supply mechanism 30 of the second embodiment may include three or more flow splitters. In this case, in the gas supply mechanism 30 shown in FIG. 8, each of the gas supply sections 11A1 to 11A3 may be replaced by a flow splitter, and it is sufficient that one gas supply section common to the three flow splitters is connected. Also in this way, the same effect as in the case of providing three or more gas supply sections 11A1 to 11A3 can be obtained.

[0062] [Supply line] · The number of supply lines 13 does not have to be the same as the number of gas diffusion members 12A. If the number of supply lines 13 is larger than the number of gas supply sources 11, it may be smaller than the number of gas diffusion members 12A. In this case, by connecting one supply line 13 to a plurality of gas diffusion members 12A, it is possible to share the gas among all the gas diffusion members 12A. Also, it is possible to increase the number of gas flow classification numbers in the processing space 21S compared to the number of gas supply sources 11.

[0063] [Shower plate] ​· The shower plate 42 may be divided into six regions, for example, as shown in FIG. 9. The shower plate 42 is composed of a first gas diffusion member 42A1, a second gas diffusion member 42A2, a third gas diffusion member 42A3, a fourth gas diffusion member 42A4, a fifth gas diffusion member 42A5, and a sixth gas diffusion member 42A6.

[0064] The first gas diffusion member 42A1 includes the center of the shower plate 42 and has a circular shape. The second gas diffusion member 42A2 is located outside the first gas diffusion member 42A1 in the radial direction of the shower plate 42 and has an annular shape concentric with the first gas diffusion member 42A1.

[0065] Each of the third gas diffusion member 42A3 to the sixth gas diffusion member 42A6 has an arc shape. One circular ring concentric with the first gas diffusion member 42A1 is formed by the four gas diffusion members 42A3 to 42A6. The third gas diffusion member 42A3 to the sixth gas diffusion member 42A6 are located outside the second gas diffusion member 42A2. The third gas diffusion member 42A3 to the sixth gas diffusion member 42A6 have the same shape as each other. Note that the third gas diffusion member 42A3 to the sixth gas diffusion member 42A6 may include a plurality of types of gas diffusion members having different circumferential lengths from each other.

[0066] · The outer shape of the shower plate 12 is not limited to a circular shape. The shower plate 12 may have a polygonal shape such as a square shape, for example.

[0067] [Gas supply mechanism] · The processing apparatus may include two or more gas supply mechanisms 10, or may include two or more gas supply mechanisms 30. Alternatively, the processing apparatus may include one or more gas supply mechanisms 10 and one or more gas supply mechanisms 30.

Explanation of reference numerals

[0068] 10, 30... Gas supply mechanism 11, 31... Gas supply source 11A, 32... Gas supply unit 12, 42… Shower plate 13… Supply line 14… Valve 20… Etching device 21… Vacuum chamber 21S… Processing space 33A… First flow splitter 33B… Second flow splitter

Claims

1. N gas supply sources, M gas diffusion members for supplying gas to the processing space, For each of the gas diffusion members, L parallel supply lines for connecting the gas supply sources in parallel, comprising: N is an integer of 1 or more, M is an integer greater than N, and L is an integer greater than N and less than or equal to M, The supply line has a valve between the gas diffusion member connected to the supply line and the gas supply source connected to the supply line Gas supply mechanism.

2. The gas supply source is composed of a plurality of gas supply parts, For each of the gas diffusion members, the plurality of gas supply parts are connected by one of the supply lines The gas supply mechanism according to Claim 1.

3. Each gas supply part is composed of a plurality of mass flow controllers, The gas supply part supplies a mixed gas of gas supplied from each mass flow controller to the gas diffusion member The gas supply mechanism according to Claim 2.

4. The gas supply source includes a plurality of flow splitters, For each of the gas diffusion members, the plurality of flow splitters are connected by one of the supply lines The gas supply mechanism according to Claim 1.

5. The gas supply mechanism according to any one of Claims 1 to 4, A processing tank defining a processing space, comprising: Processing apparatus.

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