Frame and mask device

Abstract

To provide a frame used while attached to a mask and capable of forming an electrode pattern with an excellent linearity by sputtering, and a mask device including the frame.SOLUTION: A frame has a rectangular outer shape in a plane view. At four corners of the frame, four intersections where center lines in a length direction of respective side parts of the frame are crossed each other are set. The frame is arranged on a flat plane, a height Z1 from the flat plane is measured at the four intersections, at a first middle point that is a middle point of two intersections on the same side part of the frame among the four intersections, and at a second middle point that is a middle point between the intersection and the first middle point. When a reference point (zero) is set as the lowest point of the height Z1 among the four intersections, the first middle point, and the second middle point, a difference between the maximum value and the minimum value of the height Z1 of the intersection is 25 μm or lower.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a frame and a mask device including the frame.

Background Art

[0002] As one of the methods for forming electrodes of multilayer ceramic capacitors (MLCCs), a sputtering method is used. In forming MLCC electrodes by the sputtering method, a mask made of a metal foil having a plurality of openings is used to form electrodes in a predetermined shape and at a predetermined position. Conventionally, a mask is disposed between a target and a green sheet as a dielectric, and sputtering is performed through the mask to laminate the metal of the target on the green sheet, thereby forming an MLCC electrode. In order to make the cross-sectional shape of the MLCC electrode a predetermined shape, it is desirable to use a mask that is thin and flat. However, when the thickness of the mask becomes small, there is a concern that the mask may be deformed during use.

[0003] As a vapor deposition mask having a thin precision pattern mask capable of high-precision patterning, for example, a precision pattern mask having a vapor deposition opening array corresponding to a vapor deposition pattern and having a thickness of 20 μm or less is fixed to a frame having a thickness of 1 mm or more (see, for example, Patent Document 1).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In Patent Document 1, the thickness of the opening and the thickness of the frame are defined, and the flatness (the maximum value of the deviation from the ideal plane) is described in the examples. Further, in the precision mask pattern, a deposition opening array corresponding to the deposition pattern is formed on the electroforming master by electroforming, and is fixed to the frame. Furthermore, in paragraph 0017 of Patent Document 1, it is described that "The present invention is a method for manufacturing an organic electroluminescent device, characterized by patterning a thin film layer of the organic electroluminescent device using the above-described deposition mask." Therefore, the mask of Patent Document 1 is a deposition mask for an organic electroluminescent device.

[0006] As described above, when the thickness of the mask is reduced, there is a concern that the mask may be deformed during use. Therefore, it is conceivable to increase the strength of the mask device including the frame and the mask by attaching the mask to a frame having a large thickness. However, when a mask and a frame having different flatness are bonded together, the influence of the flatness peculiar to the mask and the flatness peculiar to the frame becomes large, and there is a problem that it affects the linearity of the electrode pattern formed by sputtering.

[0007] The present invention has been made in view of the above circumstances, and an object thereof is to provide a frame that is used in combination with a mask and can form an electrode pattern excellent in linearity by sputtering, and a mask device including the frame.

Means for Solving the Problems

[0008] The present invention has the following aspects. [1] A frame having a rectangular outer shape in a plan view, At four corners of the frame, set four intersection points where the center lines in the length direction of each side of the frame intersect. Place the frame on a flat surface, and measure the height Z1 from the flat surface at the four intersection points, the first midpoints that are the midpoints between two intersection points on the same side of the frame among the four intersection points, and the second midpoints that are the midpoints between the intersection points and the first midpoints. When the point with the smallest height Z1 among the four intersection points, the first midpoints, and the second midpoints is taken as the reference point (zero), the difference between the maximum value and the minimum value of the height Z1 of the intersection points is 25 μm or less, the frame. [2] The difference in height Z1 between two intersection points on the same side of the frame among the four intersection points is 25 μm or less, the frame according to [1]. [3] The difference between the maximum value and the minimum value of the height Z1 of the intersection points, the height Z1 of the first midpoints, and the height Z1 of the second midpoints on the same side of the frame is 25 μm or less, the frame according to [1] or [2]. [4] The average value of the height Z1 of the four intersection points is 16 μm or less, the frame according to any one of [1] to [3]. [5] A mask device comprising the frame according to any one of [1] to [4] and a mask bonded to one surface of the frame. [6] Place the mask device on the flat surface so that the mask contacts the flat surface, measure the height Z2 from the flat surface to the mask, and when the minimum point among the obtained heights is taken as the reference point (zero), the average value of the height Z2 is 35 μm or less, the mask device according to [5]. [7] When the mask device is placed on the flat surface so that the mask contacts the flat surface and the height Z2 from the flat surface to the mask is measured, the difference between the maximum value and the minimum value of the height Z2 is 85 μm or less, the mask device according to [5] or [6]. [8] At least one of the frame and the mask is made of a stainless steel alloy, an iron-nickel-based alloy, or an iron-nickel-cobalt-based alloy, the mask device according to any one of [5] to [7]. [9] The mask device according to [8], wherein at least one of the frame and the mask is made of SUS430, Invar, or Super Invar.

[10] The mask device according to [9], which is used for film formation by sputtering.

[11] The mask device according to [9], which is used for forming electrodes of a multilayer ceramic capacitor.

Advantages of the Invention

[0009] According to the present invention, it is possible to provide a frame that is used by being bonded to a mask and can form an electrode pattern excellent in linearity by sputtering, and a mask device including the frame.

Brief Description of the Drawings

[0010]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

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Figure 8

Figure 9

Modes for Carrying Out the Invention

[0011] [Frame] The frame according to an embodiment of the present invention is a frame having a rectangular outer shape in a plan view. At four corner portions of the frame, four intersection points where center lines in the length direction of each side portion of the frame intersect with each other are set. The frame is placed on a flat surface, and at the four intersection points, a first intermediate point that is an intermediate point between two intersection points on the same side portion of the frame among the four intersection points, and a second intermediate point that is an intermediate point between the intersection point and the first intermediate point, the height Z1 from the flat surface is measured. When the point having the smallest height Z1 among the four intersection points, the first intermediate point, and the second intermediate point is used as a reference point (zero), the difference between the height Z1 of the reference point and the maximum value and the minimum value of the height Z1 of the intersection points other than the reference point is 25 μm or less.

[0012] Hereinafter, with reference to FIG. 1, the frame according to an embodiment of the present invention will be described in detail. FIG. 1 is a diagram schematically showing the frame of the present embodiment, (a) is a plan view, and (b) is a cross-sectional view taken along line A-A of (a). As shown in FIG. 1, the frame 1 of the present embodiment is a frame having a rectangular outer shape in a plan view. That is, the frame 1 of the present embodiment is a frame body in which four side portions 2A, 2B, 2C, 2D are orthogonal to each other, and has a rectangular opening 1a in a plan view surrounded by the four side portions 2A, 2B, 2C, 2D. The four side portions 2A, 2B, 2C, 2D are belt-like portions having a predetermined width. In the frame 1 of the present embodiment, at four corner portions 1A, 1B, 1C, 1D of the frame 1, four intersection points 4A, 4B, 4C, 4D where center lines 3A, 3B, 3C, 3D in the length direction of each of the four side portions 2A, 2B, 2C, 2D of the frame 1 intersect with each other are set. That is, the intersection of the center line 3A and the center line 3D is the intersection point 4A, the intersection of the center line 3A and the center line 3B is the intersection point 4B, the intersection of the center line 3B and the center line 3C is the intersection point 4C, and the intersection of the center line 3C and the center line 3D is the intersection point 4D.

[0013] In the frame 1 of the present embodiment, among the four intersection points 4A, 4B, 4C, and 4D, the midpoints of two intersection points on the same side portion are defined as the first midpoints 5A, 5B, 5C, and 5D. That is, the midpoint of the two intersection points 4A and 4B on the side portion 2A is the first midpoint 5A, the midpoint of the two intersection points 4B and 4C on the side portion 2B is the first midpoint 5B, the midpoint of the two intersection points 4C and 4D on the side portion 2C is the first midpoint 5C, and the midpoint of the two intersection points 4D and 4A on the side portion 2D is the first midpoint 5D.

[0014] In the frame 1 of the present embodiment, the midpoints of any one of the four intersection points 4A, 4B, 4C, 4D and any one of the first midpoints 5A, 5B, 5C, 5D are defined as the second midpoints 6A, 6B, 6C, 6D, 6E, 6F, 6G, and 6H. That is, the midpoint of the intersection point 4A and the first midpoint 5A is the second midpoint 6A, the midpoint of the intersection point 4B and the first midpoint 5A is the second midpoint 6B, the midpoint of the intersection point 4B and the first midpoint 5B is the second midpoint 6C, the midpoint of the intersection point 4C and the first midpoint 5B is the second midpoint 6D, the midpoint of the intersection point 4C and the first midpoint 5C is the second midpoint 6E, the midpoint of the intersection point 4D and the first midpoint 5C is the second midpoint 6F, the midpoint of the intersection point 4D and the first midpoint 5D is the second midpoint 6G, and the midpoint of the intersection point 4A and the first midpoint 5D is the second midpoint 6H.

[0015] In the frame 1 of the present embodiment, as shown in FIG. 1(b), the frame 1 is arranged on the flat surface 100, and the heights from the flat surface 100 at the intersection points 4A, 4B, 4C, 4D, the first midpoints 5A, 5B, 5C, 5D, and the second midpoints 6A, 6B, 6C, 6D, 6E, 6F, 6G, 6H are set as Z1.

[0016] In the frame 1 of the present embodiment, among the intersection points 4A, 4B, 4C, 4D, the first intermediate points 5A, 5B, 5C, 5D, and the second intermediate points 6A, 6B, 6C, 6D, 6E, 6F, 6G, 6H, when the point with the smallest height Z1 is used as the reference point (zero), the difference between the height Z1 of the reference point and the maximum and minimum values of the height Z1 of the intersection points 4A, 4B, 4C, 4D other than the reference point is 25 μm or less. The difference in the height Z1 is preferably 23 μm or less, and more preferably 12 μm or less. If the difference in the height Z1 exceeds 25 μm, the flatness of the frame is inferior, and when the frame is used in a mask device for sputtering, an electrode pattern with excellent linearity cannot be formed.

[0017] In the frame 1 of the present embodiment, among the four intersection points 4A, 4B, 4C, 4D, the difference in the height Z1 between two intersection points on the same side portion is preferably 25 μm or less, more preferably 20 μm or less, and even more preferably 11 μm or less. When the difference in the height Z1 is 25 μm or less, the flatness of the frame is excellent, and when the frame is used in a mask device for sputtering, an electrode pattern with excellent linearity can be formed. Note that the two intersection points on the same side portion are the intersection points 4A and 4B on the side portion 2A, the intersection points 4B and 4C on the side portion 2B, the intersection points 4C and 4D on the side portion 2C, and the intersection points 4D and 4A on the side portion 2D.

[0018] In the frame 1 of the present embodiment, it is preferable that the difference between the maximum value and the minimum value of the height Z1 of the intersection points 4A, 4B, 4C, 4D, the first intermediate points 5A, 5B, 5C, 5D, and the second intermediate points 6A, 6B, 6C, 6D, 6E, 6F, 6G, 6H on the same side is 25 μm or less, more preferably 20 μm or less, and even more preferably 18 μm or less. When the difference between the maximum value and the minimum value of the height Z1 is 25 μm or less, the flatness of the frame is excellent. Therefore, when the frame is used in a mask device for sputtering, an electrode pattern with excellent linearity can be formed. On the side portion 2A, it is preferable that the difference between the maximum value and the minimum value of the height Z1 of the intersection point 4A, the intersection point 4B, the first intermediate point 5A, and the second intermediate points 6A, 6B is 25 μm or less. On the side portion 2B, it is preferable that the difference between the maximum value and the minimum value of the height Z1 of the intersection point 4B, the intersection point 4C, the first intermediate point 5B, and the second intermediate points 6C, 6D is 25 μm or less. On the side portion 2C, it is preferable that the difference between the maximum value and the minimum value of the height Z1 of the intersection point 4C, the intersection point 4D, the first intermediate point 5C, and the second intermediate points 6E, 6F is 25 μm or less. On the side portion 2D, it is preferable that the difference between the maximum value and the minimum value of the height Z1 of the intersection point 4D, the intersection point 4A, the first intermediate point 5D, and the second intermediate points 6G, 6H is 25 μm or less.

[0019] In the frame 1 of the present embodiment, it is preferable that the average value of the height Z1 of the four intersection points 4A, 4B, 4C, 4D is 16 μm or less, more preferably 12 μm or less, and even more preferably 10 μm or less. When the average value of the height Z1 is 16 μm or less, the flatness of the frame is excellent. Therefore, when the frame is used in a mask device for sputtering, an electrode pattern with excellent linearity can be formed.

[0020] In the frame 1 of the present embodiment, the height Z1 can be measured, for example, using a CNC image measuring instrument.

[0021] The frame 1 of this embodiment preferably has an outer size of 300 mm × 300 mm to 800 mm × 800 mm, more preferably 400 mm × 400 mm to 700 mm × 700 mm, and even more preferably 500 mm × 500 mm to 600 mm × 600 mm. When the outer size is within the above range, the flatness of the frame is excellent. Therefore, when the frame is used in a mask device for sputtering, an electrode pattern with excellent linearity can be formed.

[0022] The frame 1 of this embodiment preferably has a width of the side portions 2A, 2B, 2C, 2D of 15 mm or more and 60 mm or less, more preferably 20 mm or more and 50 mm or less, and even more preferably 30 mm or more and 40 mm or less. When the width of the side portions 2A, 2B, 2C, 2D is within the above range, the flatness of the frame is excellent. Therefore, when the frame is used in a mask device for sputtering, an electrode pattern with excellent linearity can be formed.

[0023] The frame 1 of this embodiment preferably has a thickness of 0.5 mm or more and 3.0 mm or less, more preferably 0.7 mm or more and 2.0 mm or less, and even more preferably 1.0 mm or more and 1.5 mm or less. When the thickness is within the above range, the flatness of the frame is excellent. Therefore, when the frame is used in a mask device for sputtering, an electrode pattern with excellent linearity can be formed.

[0024] The frame 1 is formed of a metal material. Examples of the metal material include stainless alloys, iron-nickel alloys, and iron-nickel-cobalt alloys. Examples of the stainless alloy include SUS430, SUS304, etc. SUS304 has no magnetism, but SUS430 has strong magnetism. Therefore, when performing sputtering, it is preferable because the frame can be easily fixed to the device. Examples of the iron-nickel alloy include Invar. Examples of iron-nickel-cobalt-based alloys include, for example, Super Invar. Since both Invar and Super Invar have ferromagnetism, when sputtering is performed, it is preferable because it is easy to fix the frame to the apparatus, and since the linear expansion coefficient is small, higher dimensional accuracy is maintained even when a high temperature is applied.

[0025] In addition, in FIG. 1, the case where the frame 1 of the present embodiment has a rectangular opening 1a in a plan view is illustrated, but the frame 1 of the present embodiment is not limited to this. The frame 1 of the present embodiment may have two reinforcing parts (bars) arranged so as to be orthogonal to each other (on a cross) within the opening 1a, and at positions corresponding to the four corner parts 1A, 1B, 1C, 1D within the opening 1a, it may have a reinforcing part (a crossbar) arranged so as to straddle two adjacent sides out of the four side parts 2A, 2B, 2C, 2D. By having such a reinforcing part, the strength of the frame 1 can be improved.

[0026] [Manufacturing method of frame] The frame of the present embodiment can be manufactured, for example, by processing a metal plate or metal foil made of the above metal material into a predetermined shape by laser processing.

[0027] The frame 1 of the present embodiment is arranged on a flat surface 100, and the heights Z1 from the flat surface 100 are measured at four intersection points 4A, 4B, 4C, 4D, first intermediate points 5A, 5B, 5C, 5D that are the midpoints of two intersection points on the same side among the four intersection points 4A, 4B, 4C, 4D, and second intermediate points 6A, 6B, 6C, 6D, 6E, 6F, 6G, 6H that are the midpoints between the four intersection points 4A, 4B, 4C, 4D and the first intermediate points 5A, 5B, 5C, 5D. When the point with the smallest height Z1 among the intersection points 4A, 4B, 4C, 4D, the first intermediate points 5A, 5B, 5C, 5D, and the second intermediate points 6A, 6B, 6C, 6D, 6E, 6F, 6G, 6H is used as the reference point (zero), the difference between the height Z1 of the reference point and the maximum and minimum values of the height Z1 of the intersection points 4A, 4B, 4C, 4D other than the reference point is 25 μm or less. Therefore, it has excellent flatness and can form an electrode pattern with excellent linearity when used in a mask device for sputtering.

[0028] [Mask device] A mask device according to an embodiment of the present invention includes the frame of the above-described embodiment and a mask bonded to one surface of the frame.

[0029] Hereinafter, with reference to FIG. 2, a mask device according to an embodiment of the present invention will be described in detail. FIG. 2 is a diagram schematically showing the mask device of the present embodiment, where (a) is a plan view and (b) is a cross-sectional view taken along line B-B of (a). As shown in FIG. 2, the mask device 10 of the present embodiment includes the frame 1 of the above-described embodiment and a mask 11 bonded to one surface 1b of the frame. In other words, as shown in FIG. 2(b), the frame 1 is bonded to the edge of one surface 11a of the mask 11, and the opening 1a of the frame 1 is covered with the mask 11.

[0030] The mask 11 is made of a rectangular metal plate or metal foil in a plan view. The mask 11 has a number of aperture rows 13 each composed of a number of apertures 12 extending in the length direction of the mask 11. The aperture rows 13 are arranged side by side at intervals from each other in the width direction of the mask 11, for example. The apertures 12 penetrate in the thickness direction of the mask 11.

[0031] In the mask 11, at four corners 11A, 11B, 11C, and 11D of the region α covering the aperture 1a of the frame 1, four intersection points 16A, 16B, 16C, and 16D where the center lines 15A, 15B, 15C, and 15D in the length direction of the four edges 14A, 14B, 14C, and 14D of the region α intersect with each other are set. That is, the intersection point of the center line 15A and the center line 15D is the intersection point 16A, the intersection point of the center line 15A and the center line 15B is the intersection point 16B, the intersection point of the center line 15B and the center line 15C is the intersection point 16C, and the intersection point of the center line 15C and the center line 15D is the intersection point 16D.

[0032] In the mask 11, the midpoint between the two intersection points 16A and 16B on the edge 14A is the first midpoint 17A, and the midpoint between the two intersection points 16C and 16D on the edge 14C is the first midpoint 17B. Also, in the mask 11, the midpoint between the intersection point 16A and the first midpoint 17A is the second midpoint 18A, the midpoint between the intersection point 16B and the first midpoint 17A is the second midpoint 18B, the midpoint between the intersection point 16C and the first midpoint 17B is the second midpoint 18C, and the midpoint between the intersection point 16D and the first midpoint 17B is the second midpoint 18D.

[0033] The mask 11 has two points 19A and 19B provided at equal intervals between two intersection points 16B and 16C on the edge 14B, and two points 19C and 19D provided at equal intervals between two intersection points 16D and 16A on the edge 14D. Further, the mask 11 has two points 19E and 19F provided at equal intervals along the length direction of the mask 11 between the second intermediate point 18A and the second intermediate point 18D, two points 19G and 19H provided at equal intervals along the length direction of the mask 11 between the first intermediate point 17A and the first intermediate point 17B, and two points 19I and 19J provided at equal intervals along the length direction of the mask 11 between the second intermediate point 18B and the second intermediate point 18C. Note that the points 19A, 19B, 19C, 19D, 19E, 19F, 19G, 19H, 19I, and 19J are provided in portions where the opening 12 in the region α is not provided.

[0034] In the mask apparatus 10 of the present embodiment, when the mask apparatus 10 is arranged on the flat surface 100 such that the mask 11 contacts the flat surface 100 and the height Z2 from the flat surface 100 to the mask 11 is measured, the average value of the height Z2 is preferably 35 μm or less, more preferably 30 μm or less, and even more preferably 29 μm or less. When the average value of the height Z2 is 40 μm or less, the flatness of the mask is excellent, and thus an electrode pattern excellent in linearity can be formed. Note that the measurement points of the height Z2 are the intersection points 16A, 16B, 16C, 16D, the first intermediate points 17A, 17B, the second intermediate points 18A, 18B, 18C, 18D, and the points 19A, 19B, 19C, 19D, 19E, 19F, 19G, 19H, 19I, 19J.

[0035] In the mask apparatus 10 of the present embodiment, when the mask apparatus 10 is arranged on the flat surface 100 such that the mask 11 is in contact with the flat surface 100 and the height Z2 from the flat surface 100 to the mask 11 is measured, the difference between the maximum value and the minimum value of the height Z2 is preferably 85 μm or less, more preferably 80 μm or less, and even more preferably 61 μm or less. When the difference between the maximum value and the minimum value of the height Z2 is 85 μm or less, the flatness of the mask is excellent, so that an electrode pattern excellent in linearity can be formed. The measurement points of the height Z2 are the intersection points 16A, 16B, 16C, 16D, the first intermediate points 17A, 17B, the second intermediate points 18A, 18B, 18C, 18D, and the points 19A, 19B, 19C, 19D, 19E, 19F, 19G, 19H, 19I, 19J.

[0036] In the mask apparatus 10 of the present embodiment, the height Z2 can be measured using a CNC image measuring instrument.

[0037] The outer size of the mask 11 is preferably 290 mm × 290 mm to 790 mm × 790 mm, more preferably 390 mm × 390 mm to 690 mm × 690 mm, and even more preferably 490 mm × 490 mm to 590 mm × 590 mm. When the outer size is within the above range, the flatness of the mask is excellent, so that an electrode pattern excellent in linearity can be formed when used in a mask apparatus for sputtering.

[0038] The thickness of the mask 11 is preferably 10 μm or more and 50 μm or less, more preferably 15 μm or more and 40 μm or less, and even more preferably 20 μm or more and 30 μm or less. When the thickness is within the above range, the flatness of the mask is excellent, so that an electrode pattern excellent in linearity can be formed when used in a mask apparatus for sputtering.

[0039] The frame 1 and the mask 11 are formed of a metal material. Examples of the metal material include stainless alloy, iron-nickel alloy, and iron-nickel-cobalt alloy. Examples of the stainless alloy include SUS430, SUS304, and the like. Examples of iron-nickel alloys include Invar. Examples of iron-nickel-cobalt alloys include Super Invar. At least one of the frame 1 and the mask 11 is preferably made of a stainless alloy, an iron-nickel alloy, or an iron-nickel-cobalt alloy. When performing sputtering on the dielectric green sheet and closely attaching the mask device 10 composed of the frame 1 and the mask 11 to the green sheet with a magnet, at least one of the frame 1 and the mask 11 is preferably any one of SUS430, Invar, and Super Invar. In order to suppress deformation due to thermal history, the frame 1 and the mask 11 are preferably made of the same material. When the thermal load is small, the frame 1 and the mask 11 do not necessarily have to be made of the same material, but at least one of the frame 1 and the mask 11 is preferably made of the above materials in terms of strength.

[0040] The mask device 10 of this embodiment is excellent in flatness and is suitably used for film formation by sputtering. The mask device 10 of this embodiment is particularly suitably used for forming electrodes of multilayer ceramic capacitors.

[0041] [Method for manufacturing a mask] The mask of this embodiment can be manufactured, for example, by subjecting a metal plate or metal foil made of the above metal material to resist patterning and then performing etching with an acid solution. The resist patterning may be performed on one side of the metal plate or metal foil, or on both sides of the metal plate or metal foil. In order to make the cross-sectional shape of the mask the target shape, one side and both sides of the metal plate or metal foil may be used appropriately. After the etching treatment, the resist is removed to obtain the mask.

[0042] [Method for manufacturing a mask device] The mask device of this embodiment is obtained, for example, by bonding the frame obtained by the above-described method for manufacturing a frame to the edge of one surface of the mask obtained by the above-described method for manufacturing a mask.

[0043] Since the mask device 10 of this embodiment includes the frame 1 of the above-described embodiment and the mask 11 bonded to one surface 1a of the frame 1, it is excellent in the flatness of the mask 11 and can form an electrode pattern excellent in linearity. Note that the flatness of the mask device 10 is easily affected by the rolling conditions during the production of the metal foil, the laser processing conditions during the production of the frame, the bonding conditions between the mask 11 and the frame 1, and the working conditions. The smaller the flatness value of the mask device 10, the easier it is for the sputtered sheet (green sheet) to adhere to the mask 11, and the larger the flatness value, the weaker the contact between the sputtered sheet (green sheet) and the mask 11 occurs. In particular, the flatness of the frame 1 also plays a role in correcting the flatness of the mask 11.

Example

[0044] Hereinafter, the present invention will be described more specifically with reference to experimental examples, but the present invention is not limited to the following experimental examples.

[0045] [Manufacture of Frame] The case where SUS430 is used as the metal material for the frame is shown. It is composed of an iron-chromium alloy containing 16% by mass or more and 18% by mass or less of chromium element and the balance of iron element, and a slab having a thickness of 200 mm was prepared by continuous casting. Next, a steel sheet was manufactured by performing hot forging on the slab. Then, a hot-rolled material was obtained by subjecting the steel sheet to hot rolling until the thickness reached 5 mm. Subsequently, a rolled material having a thickness of 1 mm was obtained by performing cold rolling and annealing alternately twice each. At this time, the reduction ratio in the first cold rolling was set to 60%, and the reduction ratio in the second cold rolling was set to 50%. Thereby, the total reduction ratio in the rolled material after two cold rollings with respect to the hot-rolled material before cold rolling was set to 80%. Subsequently, tension annealing was performed on the rolled material. At this time, the annealing temperature of the rolled material during tension annealing was set to 850 °C, and the holding time was set to 5 seconds. As a result, a base material for the frame with a thickness of 1 mm was obtained. Laser processing was performed on the obtained base material for the frame to obtain a frame as shown in FIG. 1, having a rectangular outer shape in plan view, an outer size of 500 mm × 500 mm, and a width of 35 mm for the four side portions.

[0046] [Manufacture of Mask] As a metal material for the mask, it was composed of an iron-chromium alloy containing 16 mass% or more and 18 mass% or less of chromium element and the balance of iron element, and a slab with a thickness of 200 mm was prepared by continuous casting. Next, a steel slab was manufactured by performing hot forging on the slab. Then, a hot-rolled material was obtained by performing hot rolling on the steel slab until the thickness reached 40 mm. Subsequently, a rolled material with a thickness of 50 μm was obtained by performing cold rolling and annealing alternately twice each. At this time, the reduction rate in the first cold rolling was set to 68.75%, and the reduction rate in the second cold rolling was set to 60%. As a result, the total reduction rate of the rolled material after two cold rollings with respect to the hot-rolled material before cold rolling was set to 87.5%. Subsequently, tension annealing was performed on the rolled material. At this time, the annealing temperature of the rolled material during tension annealing was set to 850 °C, and the holding time was set to 4 seconds. As a result, a base material for the mask with a thickness of 50 μm was obtained. Resist patterning was performed on the obtained base material for the mask, and etching was carried out with an acid solution to obtain a mask having an outer size of 500 mm × 500 mm as shown in FIG. 2. The obtained mask had a large number of opening rows composed of a large number of openings, and the size of the openings was 180 μm × 250 μm.

[0047] [Manufacture of Mask Device] The mask device was manufactured by resistance welding a frame and a mask according to the following procedure. Figs. 3 to 8 are diagrams schematically showing a method for manufacturing a mask device. As shown in Fig. 3, a Teflon (registered trademark) yarn 22 used in screen printing was attached to one surface 21a of an aluminum frame 21. Next, as shown in Fig. 4, only the edge portion of the mask 11 was attached with an adhesive (product name: Bond G17, manufactured by Konishi Co., Ltd.) to one surface 22a of the yarn 22 attached to one surface 21a of the aluminum frame 21. Next, as shown in Fig. 5, the yarn 22 was cut along a center line along one direction of one surface 22a of the yarn 22, and the tension applied to the yarn 22 was transferred to the mask 11. Next, as shown in Fig. 6, with the mask 11 under tension, the frame 1 was placed on the other surface 11b side of the mask 11, and a glass mask 23 was placed so as to surround the outer periphery of the mask 11, aligning the position of the mask 11 with respect to the frame 1 and adjusting the pitch (the pitch of the openings arranged in a plurality on the mask). To adjust the position and pitch of the mask 11, the yarn 22 was pressed. Next, as shown in Fig. 7, the mask 11 was bonded to one surface 1a of the frame 1 by resistance welding. Next, as shown in Fig. 8, the unnecessary portion of the mask 11 (the portion protruding from the frame 1) was cut to obtain the mask device 10.

[0048] [Film formation by sputtering] The mask device obtained as described above was brought into close contact with a surface of a PET (polyethylene terephthalate) sheet coated with barium titanate, and a nickel film pattern was formed using a sputtering apparatus. The conditions are shown in Table 1.

[0049]

Table 1

[0050] [Measurement of flatness of frame] For the measurement of the flatness of the frame, a CNC image measuring instrument (product name: NEXIV VMR-12072, manufactured by Nikon Corporation) was used. The frame was placed stationary on the stage of the CNC image measuring instrument. At the four corners of the frame, four intersection points were set where the center lines in the length direction of each side of the frame intersect. The frame was placed on a flat surface, and the height from the stage was measured at the four intersection points, the first intermediate points which are the midpoints between two intersection points on the same side of the frame among the four intersection points, and the second intermediate points which are the midpoints between the intersection points and the first intermediate points. Among the four intersection points, the first intermediate points, and the second intermediate points, the flatness was calculated with the point having the smallest height as the reference point. The measurement positions of the height were set as measurement positions 1 to 16 shown in Fig. 9. Also, the height was measured for four frames. Measurement positions 1 to 16 were provided at equal intervals. The results are shown in Table 2.

[0051]

Table 2

[0052] As shown in Table 2, for sample 1, the height at position 12 shown in Fig. 9 was the reference point with a minimum value of 0 μm, and the maximum value of the difference between the height of this reference point and the heights of other positions was 23 μm. Also, for sample 2, the height at position 16 shown in Fig. 9 was the reference point with a minimum value of 0 μm, and the maximum value of the difference between the height of this reference point and the heights of other positions was 30 μm. Also, for sample 3, the height at position 8 shown in Fig. 9 was the reference point with a minimum value of 0 μm, and the maximum value of the difference between the height of this reference point and the heights of other positions was 19 μm. Also, for sample 4, the height at position 16 shown in Fig. 9 was the reference point with a minimum value of 0 μm, and the maximum value of the difference between the height of this reference point and the heights of other positions was 39 μm. Note that the symbols of the corresponding positions in Fig. 1 are attached in parentheses after the numbers of the measurement positions in Table 2. The four intersection points are positions 1, 5, 12, and 16 shown in Fig. 9, and the differences between the maximum and minimum values of the heights at these four intersection points are summarized in Table 3.

[0053]

Table 3

[0054] As shown in Table 3, for Sample 1, the maximum value of the difference between the height of the reference point and the heights of other positions was 23 μm; for Sample 2, the maximum value of the difference between the height of the reference point and the heights of other positions was 25 μm; for Sample 3, the maximum value of the difference between the height of the reference point and the heights of other positions was 12 μm; for Sample 4, the maximum value of the difference between the height of the reference point and the heights of other positions was 39 μm.

[0055] Also, the differences in height between two positions 1 and position 5 on the side including positions 1 - 5 shown in Fig. 9, the differences in height between two positions 1 and position 12 on the side including positions 1 - 12 shown in Fig. 9, the differences in height between two positions 5 and position 16 on the side including positions 5 - 16 shown in Fig. 9, and the differences in height between two positions 12 and position 16 on the side including positions 12 - 16 shown in Fig. 9 were calculated. The results are shown in Table 4.

[0056]

Table 4

[0057] As shown in Table 4, for Sample 1, the maximum value of the difference in height of the measurement positions was 20 μm; for Sample 2, the maximum value of the difference in height of the measurement positions was 25 μm; for Sample 3, the maximum value of the difference in height of the measurement positions was 11 μm; for Sample 4, the maximum value of the difference in height of the measurement positions was 33 μm.

[0058] Also, the height of position 1, the height of position 5 on the side including positions 1 - 5 shown in FIG. 9, and the difference between the maximum and minimum values of the heights of positions 2, 3, and 4, the height of position 1, the height of position 12 on the side including positions 1 - 12 shown in FIG. 9, and the difference between the maximum and minimum values of the heights of positions 6, 8, and 10, the height of position 5, the height of position 16 on the side including positions 5 - 16 shown in FIG. 9, and the difference between the maximum and minimum values of the heights of positions 7, 9, and 11, the height of position 12, the height of position 16 on the side including positions 12 - 16 shown in FIG. 9, and the difference between the maximum and minimum values of the heights of positions 13, 14, and 15 were calculated. Table 5 shows the maximum value of the difference between the maximum and minimum values of the height Z1 of the intersection point, the height Z1 of the first intermediate point, and the height Z1 of the second intermediate point on the same side portion of the frame.

[0059]

Table 5

[0060] As shown in Table 5, for sample 1, the maximum value of the difference between the maximum and minimum values of the height Z1 of the intersection point, the height Z1 of the first intermediate point, and the height Z1 of the second intermediate point on the same side portion of the frame was 20 μm; for sample 2, it was 25 μm; for sample 3, it was 18 μm; and for sample 4, it was 33 μm.

[0061] Also, the average values of the height of position 1, the height of position 5, the height of position 12, and the height of position 16 shown in FIG. 9 were calculated. The results are shown in Table 6.

[0062]

Table 6

[0063] As shown in Table 6, the average value of the height of the measurement positions was 12 μm for Sample 1, 16 μm for Sample 2, 10 μm for Sample 3, and 17 μm for Sample 4.

[0064] [Measurement of the flatness of the mask device] For the measurement of the flatness of the mask device, a CNC image measuring instrument (product name: NEXIV VMR-12072, manufactured by Nikon Corporation) was used. The mask device was placed stationary so that the mask was in contact with the stage of the CNC image measuring instrument. At the region covering the opening of the frame among the masks, 20 points shown in Fig. 2 (in the plan view from the side of Frame 1, the intersection points 16A, 16B, 16C, 16D of the lines connecting the four non-opened points at the four corners of Mask 11 in the vertical and horizontal directions, the first intermediate points 17A, 17B in the horizontal direction, the second intermediate points 18A, 18B, 18C, 18D which are the intermediate points of the first intermediate points, the points 19A, 19B, 19C, 19D that divide the vertical sides into three equal parts, 19E, 19F, 19G, 19H, 19I, 19J within the plane of Mask 1) were used as the measurement positions, and at those measurement positions, the height Z2 from the stage was measured. 19E, 19F, 19G, 19H, 19I, 19J within the plane of Mask 1 are the intersection points of the lines connecting the opposing first intermediate points, second intermediate points, and the points that divide the vertical sides into three equal parts in parallel to each side. All are parts that are not opened. Using the point with the minimum value among the obtained heights as the reference point (zero), the flatness was calculated. The results are shown in Table 7.

[0065]

Table 7

[0066] As shown in Table 7, the average value of the height of the measurement positions was 30 μm for Sample 1, 29 μm for Sample 2, 35 μm for Sample 3, and 45 μm for Sample 4. In addition, the symbols of the corresponding positions in Fig. 2 are attached in parentheses after the numbers of the measurement positions in Table 7.

[0067] Also, the mask device was stationary so that the mask was in contact with the stage of the CNC image measuring instrument. At the region covering the opening of the frame among the masks, at 20 points shown in Fig. 2 (intersection points 16A, 16B, 16C, 16D, first intermediate points 17A, 17B, second intermediate points 18A, 18B, 18C, 18D, points 19A, 19B, 19C, 19D, 19E, 19F, 19G, 19H, 19I, 19J) as the measurement positions, when measuring the height from the stage at those measurement positions, the maximum value and the minimum value of the said height were calculated from the results shown in Table 7. The results are shown in Table 8.

[0068]

Table 8

[0069] As shown in Table 9, for Sample 1, the difference between the maximum value and the minimum value of the height at the measurement positions was 85 μm, for Sample 2, the difference between the maximum value and the minimum value of the height at the measurement positions was 85 μm, for Sample 3, the difference between the maximum value and the minimum value of the height at the measurement positions was 61 μm, and for Sample 4, the difference between the maximum value and the minimum value of the height at the measurement positions was 135 μm.

[0070] [Evaluation of Pattern] At four corners and the center of each sample, 25 points each, the line widths of the patterns of the nickel film formed by the sputtering apparatus were the measurement targets, and the dimensions in the width (180 μm) direction near the center of each pattern with a size of 180 μm × 250 μm were measured. For the measurement of the dimensions in the width direction near the center of each pattern, a CNC image measuring instrument (trade name: NEXIV VMR - 12072, manufactured by Nikon Corporation) was used. The patterning characteristics were evaluated by the difference between the maximum value and the minimum value of the dimensions in the width direction near the center of each pattern. The results of the evaluation were shown in Table 9 as "◎" when the difference between the maximum value and the minimum value was 10 μm or less, "○" when the difference between the maximum value and the minimum value was 15 μm or less, and "×" when the difference between the maximum value and the minimum value exceeded 15 μm.

[0071]

Table 9

[0072] If the determination is "◎" or "○", it has no effect on the characteristics as a capacitor when hundreds of layers of nickel films are laminated. However, if the determination is "×", problems such as variations in capacitor capacitance and leakage during lamination are likely to occur. The factor for the increase in the pattern size is considered to be that when the adhesion between the mask and the object to be vapor-deposited is weak, the vapor-deposited material creeps in. This is considered to be due to the fact that when the flatness of the mask is large, the strength of adhesion varies in the plane.

Explanation of symbols

[0073] 1 Frame 1A, 1B, 1C, 1D Corners 2A, 2B, 2C, 2D Sides 3A, 3B, 3C, 3D Center lines 4A, 4B, 4C, 4D Intersections 5A, 5B, 5C, 5D First intermediate points 6A, 6B, 6C, 6D, 6E, 6F, 6G, 6H Second intermediate points 10 Mask device 11 Mask 11A, 11B, 11C, 11D Corners 12 Opening 13 Opening row 14A, 14B, 14C, 14D Edges 15A, 15B, 15C, 15D Center lines 16A, 16B, 16C, 16D Intersections 17A, 17B First intermediate points 18A, 18B, 18C, 18D Second intermediate points 19A, 19B, 19C, 19D, 19E, 19F, 19G, 19H, 19I, 19J Points

Claims

1. A frame having a rectangular outer shape in plan view, at the four corners of the frame, four intersection points where the center lines in the length direction of each side of the frame intersect are set, the frame is placed on a flat surface, and at the four intersection points, the first intermediate points which are the midpoints between two intersection points on the same side of the frame among the four intersection points, and the second intermediate points which are the midpoints between the intersection points and the first intermediate points, the height Z1 from the flat surface is measured, and among the four intersection points, the first intermediate points, and the second intermediate points, when the point with the smallest height Z1 is taken as the reference point (zero), the difference between the maximum value and the minimum value of the height Z1 of the intersection points is 25 μm or less. A frame.

2. The frame according to claim 1, wherein the difference in height Z1 between two intersection points on the same side of the frame among the four intersection points is 25 μm or less.

3. The frame according to claim 1, wherein the difference between the maximum value and the minimum value of the height Z1 of the intersection points, the height Z1 of the first intermediate points, and the height Z1 of the second intermediate points on the same side of the frame is 25 μm or less.

4. The frame according to claim 1, wherein the average value of the height Z1 of the four intersection points is 16 μm or less.

5. A mask device comprising the frame according to any one of claims 1 to 4 and a mask bonded to one surface of the frame.

6. The mask device according to claim 5, wherein the mask device is placed on the flat surface so that the mask is in contact with the flat surface, the height Z2 from the flat surface to the mask is measured, and when the minimum point among the obtained heights is taken as the reference point (zero), the average value of the height Z2 is 35 μm or less.

7. The mask device according to claim 5, wherein the mask device is placed on the flat surface so that the mask is in contact with the flat surface, and when the height Z2 from the flat surface to the mask is measured, the difference between the maximum value and the minimum value of the height Z2 is 100 μm or less.

8. The mask device according to claim 5, wherein at least one of the frame and the mask is made of a stainless steel alloy, an iron-nickel alloy, or an iron-nickel-cobalt alloy.

9. The mask device according to claim 8, wherein at least one of the frame and the mask is made of SUS430, Invar, or Super Invar.

10. The mask device according to claim 9, which is used for film formation by sputtering.

11. The mask device according to claim 9, which is used for forming electrodes of a multilayer ceramic capacitor.

Images